Mass transfer device and method

Abstract

The invention provides a huge transfer device and method, and relates to the technical field of display, and the device comprises a transient substrate and a light control substrate; a photolysis glue layer is formed on the transient substrate, and a plurality of light-emitting units are adhered to the photolysis glue layer; multiple types of light control units corresponding to the light emitting units are formed on the light control substrate, and the light control units can reach the target light transmittance under the condition that the applied driving voltage reaches the target voltage, so that the penetrating laser can remove the corresponding photolysis glue layer; different types of light control units correspond to different target voltages. According to the technical scheme provided by the invention, the process difficulty of mass transfer can be reduced.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a mass transfer device and method. Background Art

[0002] Micro LED is an emerging display technology that has the advantages of high stability, long life, high contrast and low power consumption, and is therefore regarded as the next generation display technology.

[0003] In the process of preparing Micro LED display devices, mass transfer technology is required to transfer millions or even tens of millions of micron-sized Micro LED chips (or light-emitting units) from the growth substrate to the driving substrate. Therefore, the precision of the mass transfer process is required to be very high.

[0004] The mass transfer technology of light-emitting units usually adopts laser contactless transfer technology, which can improve the accuracy of the transfer process by taking advantage of the energy density and high pulse repetition frequency of the laser beam. However, when transferring light-emitting units in batches, it is necessary to accurately control the area irradiated by the laser to prevent the light-emitting units not to be transferred from being peeled off the substrate, which makes the process more difficult. Summary of the invention

[0005] In view of this, the present application provides a mass transfer device and method for reducing the process difficulty of mass transfer.

[0006] In order to achieve the above-mentioned objectives, in a first aspect, an embodiment of the present application provides a mass transfer device, including: a transient substrate and a light control substrate;

[0007] A photolytic glue layer is formed on the temporary substrate, and a plurality of light-emitting units are adhered to the photolytic glue layer;

[0008] The light control substrate is provided with a plurality of types of light control units corresponding to the light emitting units. When the applied driving voltage reaches the target voltage, the light control units can achieve the target transmittance, so that the laser passing through can remove the corresponding photolytic glue layer; different types of light control units correspond to different target voltages.

[0009] In a possible implementation of the first aspect, the device further includes: a driving substrate and a transfer mechanism, wherein the transfer mechanism is used to transfer the light-emitting unit to be transferred to the driving substrate; the light-emitting unit to be transferred is a light-emitting unit whose photolytic glue layer in the corresponding area has been removed.

[0010] In a possible implementation manner of the first aspect, the light control unit includes a driving element and a light control element electrically connected to the driving element, wherein the driving element is used to change the light transmittance of the light control element under the action of a driving voltage;

[0011] The light control units correspond to the light emitting units one by one.

[0012] In a possible implementation manner of the first aspect, a spacing between adjacent light control units of the same type matches a spacing between adjacent pixel positions on the driving substrate.

[0013] In a possible implementation of the first aspect, the driving element is a thin film transistor.

[0014] In a possible implementation of the first aspect, active layers of thin film transistors of different types of light control units have different doping concentrations.

[0015] In a possible implementation manner of the first aspect, the driving element is a resistor, and different types of light control units have different resistance values.

[0016] In a possible implementation of the first aspect, the light control element is a liquid crystal box or an electrochromic structure.

[0017] In a possible implementation manner of the first aspect, the light control substrate is integrated on a side of the temporary substrate away from the photolytic adhesive layer.

[0018] In a second aspect, an embodiment of the present application provides a mass transfer method, which is applied to the mass transfer device according to the first aspect or any one of the first aspects, and the method includes:

[0019] Aligning the light emitting unit of the transient substrate with the light control unit of the light control substrate, and irradiating the light control unit of the light control substrate with laser light;

[0020] Sequentially applying different driving voltages to the light control units of the light control substrate, wherein each applied driving voltage is used to control the transmittance of one type of light control unit to reach a target transmittance, so that the laser passing through the light control unit with the target transmittance removes the corresponding photolytic glue layer;

[0021] Each time a driving voltage is applied to the light control substrate, the light emitting unit to be transferred is transferred to the driving substrate through a transfer mechanism.

[0022] The mass transfer device and method provided by the embodiment of the present application, wherein the device includes: a temporary substrate and a light control substrate; a photolytic glue layer is formed on the temporary substrate, and a plurality of light-emitting units are adhered to the photolytic glue layer; a plurality of types of light-controlling units corresponding to the light-emitting units are formed on the light control substrate, and when the applied driving voltage reaches the target voltage, the light-controlling unit can reach the target transmittance, so that the laser passing through can remove the corresponding photolytic glue layer; different types of light-controlling units correspond to different target voltages. The mass transfer device provided by the embodiment of the present application can reduce the process difficulty of mass transfer. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 A schematic diagram of the structure of a mass transfer device provided in an embodiment of the present application;

[0024] Figure 2 A schematic top view of a drive substrate provided in an embodiment of the present application;

[0025] Figure 3 A schematic diagram of the structure of a first light control unit provided in an embodiment of the present application;

[0026] Figure 4 A schematic diagram of the structure of a second light control unit provided in an embodiment of the present application;

[0027] Figures 5 to 7 A schematic diagram of the transfer of the first light control unit provided in an embodiment of the present application;

[0028] Figure 8 A schematic top view of a driving substrate after mass transfer is completed according to an embodiment of the present application;

[0029] Fig. 9 and Fig.10 A schematic diagram of the transfer of the second light control unit provided in an embodiment of the present application;

[0030] Fig.11 A schematic diagram of the flow chart of the mass transfer method provided in an embodiment of the present application.

[0031] Description of reference numerals:

[0032] 1-transient substrate; 11-first supporting substrate; 12-photolytic adhesive layer;

[0033] 2-light control substrate; 21-second carrier substrate; 22-light control unit; 221-light control element; 222-thin film transistor; 2221-gate; 2222-gate insulating layer; 2223-active layer; 2224-drain; 2225-source; 223-resistance;

[0034] 3-light-emitting unit; 31-light-emitting unit to be transferred;

[0035] 4-driving substrate; 41-pixel position. DETAILED DESCRIPTION

[0036] The embodiments of the present application are described below in conjunction with the drawings in the embodiments of the present application. The terms used in the implementation method section of the embodiments of the present application are only used to explain the specific embodiments of the present application, and are not intended to limit the present application. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments.

[0037] The present application embodiment provides a mass transfer device, Figure 1 A schematic diagram of the structure of a mass transfer device provided in an embodiment of the present application is shown in FIG. Figure 1 As shown, the mass transfer device may include: a temporary substrate 1 and a light control substrate 2 .

[0038] Specifically, the transient substrate 1 may include a first carrier substrate 11 and a photolytic glue layer 12 formed on the upper surface of the first carrier substrate 11. The first carrier substrate 11 may be a substrate with good light transmittance such as a glass substrate, a sapphire substrate, and a quartz substrate. The photolytic glue layer 12 may be formed on the first carrier substrate 11 by a coating process, and the material may be a photolytic polymer that can be removed under the irradiation of a laser. The light-emitting unit 3 may include epitaxy, a first contact electrode, and a second contact electrode, and the first contact electrode and the second contact electrode may be adhered to the photolytic glue layer 12.

[0039] The light control substrate 2 may include a second carrier substrate 21 and light control units 22 formed on the second carrier substrate 21 and arranged corresponding to the light emitting units 3. The second carrier substrate 21 may include a plurality of driving traces (not shown) for transmitting a driving voltage to each light control unit 22. The light control units 22 may include multiple types, and different types of light control units 22 may correspond to different target voltages. When the applied driving voltage reaches the target voltage, the light control unit 22 may reach a target transmittance, so that the laser passing through may remove the corresponding photolytic glue layer 12. The light control units 22 may correspond one to one with the light emitting units 3, so as to improve the transfer efficiency.

[0040] The mass transfer device may further include a driving substrate 4 and a transfer mechanism (not shown), the transfer mechanism may transfer the light emitting unit 31 to be transferred to the driving substrate 4, the light emitting unit 31 to be transferred is the light emitting unit 3 whose photolytic glue layer 12 of the corresponding area is removed, see Figure 2 The driving substrate 4 may include a plurality of pixel positions 41 (or bonding points). The spacing between adjacent light control units 22 of the same type may match the spacing between adjacent pixel positions 41 on the driving substrate.

[0041] The following takes the example of the light-emitting units 3 being divided into three batches and transferred to the driving substrate 4. For the convenience of explanation, the light-control units 22 corresponding to the light-emitting units 3 transferred in the first batch are called the first light-control units, the light-control units 22 corresponding to the light-emitting units 3 transferred in the second batch are called the second light-control units, and the light-control units 22 corresponding to the light-emitting units 3 transferred in the third batch are called the third light-control units.

[0042] The light control unit 22 may include a light control element 221 and a driving element electrically connected to the light control element 221 . The driving element may change the light transmittance of the light control element 221 under the action of a driving voltage. Figure 3 This is a structural diagram of the first light control unit provided in the embodiment of the present application, see Figure 3 The driving element may be a thin film transistor 222. It should be noted that the thin film transistor 222 may be a bottom gate structure or a top gate structure. Figure 3 The thin film transistor 222 is exemplarily shown to be a bottom-gate structure. Figure 4 This is a schematic diagram of the structure of the second light control unit provided in the embodiment of the present application, see Figure 4 , the driving element may be a resistor 223 .

[0043] The light control element 221 can be a liquid crystal box or an electrochromic structure, wherein the liquid crystal box can include liquid crystal molecules and driving electrodes for driving the liquid crystal molecules to deflect. The liquid crystal molecules can be positive liquid crystal molecules or negative liquid crystal molecules. The embodiment of the present application takes the liquid crystal as a positive liquid crystal molecule as an example. The liquid crystal box can adopt plane switching technology (In-Plane Switching, IPS), so that only one layer of driving electrode layer can be set to achieve liquid crystal deflection, thereby simplifying the structure. The liquid crystal box can also adopt super twisted nematic liquid crystal display technology (Super-Twisted Nematic Display, STN), which can reduce the difficulty of manufacturing. The electrochromic structure can be electrochromic glass, etc.

[0044] See also Figure 3 The thin film transistor 222 may include a gate 2221, a gate insulating layer 2222 covering the gate 2221, an active layer 2223 formed on the gate insulating layer 2222, and a drain 2224 and a source 2225 formed on the active layer 2223. The gate 2221 is a control electrode of the thin film transistor 222, which can be used to control the conduction and cutoff of the thin film transistor 222. By controlling the size of the gate voltage (driving voltage), the conduction degree of the thin film transistor 222 can be adjusted. The thin film transistor 222 can be connected to the light control element 221 through the source 2225.

[0045] The gate 2221, the drain 2224 and the source 2225 may be made of copper or aluminum. The material of the gate insulating layer 2222 may include silicon nitride and silicon oxide, etc. The active layer 2223 may include one or more of amorphous silicon, polycrystalline silicon, and metal oxide semiconductors.

[0046] In the embodiment of the present application, the channel doping elements and doping concentrations of the active layer 2223 of different types of thin film transistors 222 may be different. When the doping element is phosphorus, the thin film transistor 222 is an N-type thin film transistor, and when its gate voltage is greater than the turn-on voltage, the greater the gate voltage, the greater the turn-on degree of the thin film transistor 222. When the doping element is boron, the thin film transistor 222 is a P-type thin film transistor, and when its gate voltage is less than the turn-on voltage, the smaller the gate voltage, the greater the turn-on degree of the thin film transistor 222.

[0047] Taking the thin film transistor 222 as an N-type thin film transistor with different doping concentrations as an example, when the gate voltage is less than the on-voltage, the thin film transistor 222 is cut off, and the light-controlling element 221 is in an opaque state; when the gate voltage is not less than the on-voltage, the thin film transistor 222 is turned on, and the source voltage can be applied to the light-controlling element 221, so that the light-controlling element 221 is in a light-transmitting state. When the light-controlling element 221 is in the light-transmitting state, the laser can remove the photolytic glue layer 12.

[0048] For example, the doping concentrations of the thin film transistor 222 of the first light control unit, the thin film transistor 222 of the second light control unit, and the thin film transistor 222 of the third light control unit can be reduced in sequence, so that the driving voltage passed into the light control substrate 2 can be gradually increased to control the conduction of the thin film transistors 222 of different types of light control units 22. In order to improve the light transmission accuracy of controlling the light control element 221, the conduction voltage difference of various types of thin film transistors can be greater than 1V.

[0049] The laser can be irradiated on the entire surface of the light control substrate 2. In some embodiments, the driving voltage applied to the light control substrate 2 each time can only reach the target voltage of one type of thin film transistor 222, and the target voltage can drive the corresponding thin film transistor 222 to turn on.

[0050] Specifically, see Figures 5 to 7When the first batch of light-emitting units 31 to be transferred are transferred, the light control substrate 2 can be supplied with a first driving voltage, and the first driving voltage can reach the target voltage of the thin film transistor 222 of the first light-controlling unit. At this time, the thin film transistor 222 of the first light-controlling unit is turned on, and the thin film transistors 222 of the second light-controlling unit and the thin film transistors 222 of the third light-controlling unit are still cut off. The transmittance of the laser through the first light-controlling unit can reach the target transmittance, and the photolytic glue layer 12 corresponding to the first light-controlling unit can be removed, while the photolytic glue layer 12 corresponding to the second light-controlling unit and the third light-controlling unit cannot be removed, so that the light-emitting units 31 to be transferred can be peeled off from the temporary substrate 1, and then can be picked up by the transfer mechanism and transferred to the driving substrate 4.

[0051] During the second batch transfer, a second driving voltage can be applied to the light control substrate 2, and the second driving voltage can be greater than the first driving voltage to achieve the target voltage of the thin film transistor 222 of the second light control unit, so that the thin film transistor 222 of the second light control unit is turned on, and the thin film transistor 222 of the third light control unit is still cut off. The transmittance of the laser through the second light control unit can reach the target transmittance, so that the photolytic glue layer 12 corresponding to the second light control unit can be removed, and the photolytic glue layer 12 corresponding to the third light control unit cannot be removed, so that the light-emitting unit 3 corresponding to the second light control unit can be peeled off from the temporary substrate 1, and then can be transferred to the driving substrate 4 by the transfer mechanism.

[0052] During the third batch transfer, the light control substrate 2 can be supplied with a third driving voltage, which can be greater than the second driving voltage, to achieve the target voltage of the thin film transistor 222 of the third light control unit, thereby turning on the thin film transistor 222 of the third light control unit, and the transmittance of the laser through the third light control unit can reach the target transmittance, so that the photolytic glue layer 12 corresponding to the third light control unit can be removed, and the light emitting unit 3 corresponding to the third light control unit can be peeled off from the temporary substrate 1, and then can be transferred to the driving substrate 4 by the transfer mechanism to complete the mass transfer, see Figure 8 .

[0053] It should be noted that, in the present application, when transferring the light-emitting units 3 in batches, it is not necessary to change the positional relationship between the transient substrate 1 and the light control substrate 2 , thereby reducing the operation process and the difficulty of operation.

[0054] In the embodiment of the present application, only a gate voltage and a source voltage need to be provided. By changing the gate voltage, the laser irradiation can be precisely controlled to a specific area, thereby completing the selective transfer of the light-emitting unit 3. The driving scheme of this solution is simple and easy to implement, and does not require complex driving methods such as row / column scanning, thereby effectively reducing the difficulty of the mass transfer process.

[0055] In some embodiments, the driving voltage passed through the light control substrate 2 can reach the target voltage of multiple types of thin film transistors 222. Taking the driving voltage reaching the target voltage of the thin film transistor 222 of the first light control unit and the thin film transistor 222 of the second light control unit as an example, since the doping concentration of the thin film transistor 222 of the first light control unit is higher than that of the thin film transistor 222 of the second light control unit, the conduction degree of the thin film transistor 222 of the first light control unit is greater than that of the thin film transistor 222 of the second light control unit, so the magnitude of the laser energy can be controlled, so that the photolytic glue layer 12 corresponding to the first light control unit can be removed, and the photolytic glue layer 12 corresponding to the second light control unit can be retained, thereby improving the application range of the mass transfer device. The magnitude of the driving voltage can be selected according to actual needs, and the embodiment of the present application does not impose any special restrictions on this.

[0056] When the doping element is boron, the principle of the mass transfer process can refer to the above embodiment, and this application will not elaborate on it here.

[0057] When the driving element can be a resistor 223, since the resistor 223 can divide the voltage, the photoresist layer 12 corresponding to different types of light control units 22 can be removed in batches, and the resistance values ​​of different types of light control units 22 can be different. For example, the resistance value of the first light control unit can be the smallest, and the resistance value of the third light control unit can be the largest.

[0058] Considering that when the driving element is a resistor 223, the laser can be irradiated on the photodissolved glue layer 12 through each light control element 221. In some embodiments, after a constant driving voltage is passed through the light control substrate 2, the transmittance of the first light control unit is the largest, and the corresponding photodissolved glue layer 12 is removed first, and the transmittance of the third light control unit is the smallest, and the corresponding photodissolved glue layer 12 is removed last, so that the light control substrate 2 can be unchanged and only a constant driving voltage is passed through, and the light-emitting units 3 can be transferred in batches. In order to improve the reliability of the mass transfer process, the mass transfer device can also control the energy of the laser so that the photodissolved glue layer 12 corresponding to the light-emitting units 3 that do not need to be transferred in the current batch can be left unchanged.

[0059] To improve the transfer efficiency, when the first batch of light-emitting units 3 are transferred, the light control substrate 2 can be supplied with a first driving voltage, so that the first light-control unit can reach the target transmittance, and the corresponding photoresist layer 12 can be removed first, see Fig. 9 and Fig.10 .

[0060] When the second batch of light-emitting units 3 are transferred, a second driving voltage can be applied to the light control substrate 2, and the second driving voltage is greater than the first driving voltage. The second light-control unit can reach the target transmittance under the action of the second driving voltage, so that the photolytic glue layer 12 corresponding to the second light-control unit can be removed before the photolytic glue layer 12 corresponding to the third light-control unit. In this way, the light-emitting units 3 transferred in the second batch can be picked up by the transfer mechanism.

[0061] When the third batch of light-emitting units 3 are transferred, a third driving voltage can be applied to the light control substrate 2, and the third driving voltage can be greater than the second driving voltage. The third light control unit can achieve the target transmittance under the action of the third driving voltage, so that the light-emitting unit 3 corresponding to the third light control unit can be peeled off from the photolytic glue layer 12 and transferred to the driving substrate 4.

[0062] In some embodiments, the light control substrate 2 can be integrated on a side of the temporary substrate 1 away from the photoresist layer 12 , thereby simplifying the structure.

[0063] The mass transfer device provided by the embodiment of the present application includes: a temporary substrate, a light control substrate, a driving substrate and a transfer mechanism; a photolytic glue layer is formed on the temporary substrate, and a plurality of light-emitting units are adhered to the photolytic glue layer; a plurality of types of light-controlling units corresponding to the light-emitting units are formed on the light control substrate, and when the applied driving voltage reaches the target voltage, the light-controlling units can reach the target transmittance, so that the laser passing through can remove the corresponding photolytic glue layer; different types of light-controlling units correspond to different target voltages; the transfer mechanism is used to transfer the light-emitting units to be transferred to the driving substrate; the light-emitting units to be transferred are light-emitting units whose photolytic glue layers in the corresponding areas have been removed. The mass transfer device provided by the embodiment of the present application can reduce the process difficulty of mass transfer.

[0064] Based on the same inventive concept, an embodiment of the present application also provides a mass transfer method, which can be used in the mass transfer device described in any of the above embodiments. Fig.11 For a flow chart of a mass transfer method provided in an embodiment of the present application, see Fig.11 , the method may include the following steps:

[0065] Step S110 , aligning the light emitting unit of the temporary substrate and the light controlling unit of the light controlling substrate, and irradiating the light controlling unit of the light controlling substrate with laser.

[0066] The light emitting unit of the temporary substrate and the light control unit of the light control substrate are aligned so that the laser can irradiate the photolytic glue layer of the temporary substrate after passing through the light control unit, thereby increasing the removal rate of the photolytic glue layer and thus improving the transfer efficiency.

[0067] Step S120, applying different driving voltages to the light control units of the light control substrate in sequence, wherein the driving voltage applied each time is used to control the transmittance of one type of light control unit to reach a target transmittance, so that the laser passing through the light control unit with the target transmittance removes the corresponding photolytic glue layer.

[0068] By making only one type of light control unit reach the target transmittance each time, the photoresist layer corresponding to the light-emitting unit can be removed in batches, providing time for the transfer mechanism to transfer the light-emitting unit and improving the light control accuracy of the light control unit.

[0069] Step S130 , after each application of a driving voltage to the light control substrate, the light emitting unit to be transferred is transferred to the driving substrate by a transfer mechanism.

[0070] Each time a driving voltage is applied to the light control substrate, the corresponding batch of light emitting units can be peeled off from the photoresist layer. In some embodiments, when transferring the light emitting units, the transfer mechanism can first pick up the light emitting units to the temporary substrate through the transfer mechanism, and then die-bond the light emitting units on the driving substrate.

[0071] Since the mass transfer method in this embodiment can be applied to the mass transfer device in the above-mentioned embodiment, that is, the mass transfer method in this embodiment has the technical effects of the above-mentioned mass transfer device embodiment, please refer to the above-mentioned embodiment for details and will not be repeated here.

[0072] Those skilled in the art will appreciate that the above embodiments are exemplary and are not intended to limit the present application. Where possible, the execution order of one or more of the above steps may be adjusted, or may be selectively combined to obtain one or more other embodiments. Those skilled in the art may select and combine any of the above steps as needed, and all those that do not depart from the essence of the present application fall within the scope of protection of the present application.

[0073] It should be understood that in the description of the present application specification and the appended claims, the terms "include", "comprises", "has" and any variations thereof are intended to cover non-exclusive inclusions and mean "including but not limited to", unless otherwise specifically emphasized.

[0074] In the description of this application, unless otherwise specified, " / " indicates that the objects associated with each other are in an "or" relationship. For example, A / B can represent A or B. "And / or" in this application is used to describe the association relationship between associated objects, indicating that three relationships may exist. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone, where A and B can be singular or plural.

[0075] Furthermore, in the description of the present application, unless otherwise specified, "plurality" refers to two or more than two. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items.

[0076] In addition, in the description of the present application, it should be understood that the terms "longitudinal", "horizontal", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "vertical", "top", "bottom", "inside", "outside", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0077] In the present application, unless otherwise clearly specified and limited, the terms "connection", "connected", etc. should be understood in a broad sense. For example, it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. It can be the internal connection of two elements or the interaction relationship between two elements. Unless otherwise clearly defined, ordinary technicians in this field can understand the specific meanings of the above terms in this application according to the specific circumstances.

[0078] In addition, in the description of the present specification and the appended claims, the terms "first", "second", etc. are used to distinguish similar objects, but not necessarily to describe a specific order or sequence, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments described herein can be implemented in an order other than that illustrated or described herein; the features defined as "first" or "second" may explicitly or implicitly include at least one of the features.

[0079] In the embodiments of the present application, the words "exemplarily" or "for example" are used to indicate examples, illustrations or explanations. Any embodiment or design described as "exemplarily" or "for example" in the embodiments of the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplarily" or "for example" is intended to present related concepts in a specific way.

[0080] References to "one embodiment" or "some embodiments" etc. described in the specification of this application mean that one or more embodiments of the present application include specific features, structures or characteristics described in conjunction with the embodiment. Therefore, the phrases "in one embodiment", "in some embodiments", "in some other embodiments", "in some other embodiments", etc. appearing in different places in this specification do not necessarily refer to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized in other ways.

[0081] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A mass transfer device, characterized in that: include: transient substrates and light control substrates; A photolytic glue layer is formed on the temporary substrate, and a plurality of light-emitting units are adhered to the photolytic glue layer; The light control substrate is provided with a plurality of types of light control units corresponding to the light emitting units. When the applied driving voltage reaches the target voltage, the light control units can achieve the target light transmittance, so that the laser passing through can remove the corresponding photolytic glue layer. Different types of light control units correspond to different target voltages.

2. The device according to claim 1, characterized in that The device further comprises: a driving substrate and a transfer mechanism, wherein the transfer mechanism is used to transfer the light-emitting unit to be transferred to the driving substrate; the light-emitting unit to be transferred is a light-emitting unit whose photodisintegration layer in the corresponding area is removed.

3. The device according to claim 1, characterized in that The light control unit includes a driving element and a light control element electrically connected to the driving element, wherein the driving element is used to change the light transmittance of the light control element under the action of a driving voltage; The light control units correspond to the light emitting units one by one.

4. The device according to claim 2, characterized in that The spacing between adjacent light control units of the same type matches the spacing between adjacent pixel positions on the driving substrate.

5. The device according to claim 3, characterized in that The driving element is a thin film transistor.

6. The device according to claim 5, characterized in that The active layers of thin film transistors of different types of light control units have different doping concentrations.

7. The device according to claim 3, characterized in that The driving element is a resistor, and different types of light control units have different resistance values.

8. The device according to claim 3, characterized in that The light control element is a liquid crystal box or an electrochromic structure.

9. The device according to any one of claims 1 to 8, characterized in that: The light control substrate is integrated on a side of the temporary substrate away from the photolytic adhesive layer.

10. A method for mass transfer, characterized in that: Applied to the mass transfer device according to any one of claims 1 to 9, the method comprises: Aligning the light emitting unit of the transient substrate with the light control unit of the light control substrate, and irradiating the light control unit of the light control substrate with laser light; Sequentially applying different driving voltages to the light control units of the light control substrate, wherein each applied driving voltage is used to control the transmittance of one type of light control unit to reach a target transmittance, so that the laser passing through the light control unit with the target transmittance removes the corresponding photolytic glue layer; Each time a driving voltage is applied to the light control substrate, the light emitting unit to be transferred is transferred to the driving substrate through a transfer mechanism.

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