Micro-LED full-color display device with cooling system and preparation method thereof

Abstract

The invention discloses a Micro-LED full-color display device with a cooling system and a preparation method thereof, the Micro-LED full-color display device comprises a substrate and a cooling channel arranged on the other side of the substrate, so that the cooling channel is integrated on the substrate, cooling liquid is introduced into the cooling channel, and the cooling liquid is used for absorbing and taking away heat of a chip, reducing the temperature of the device and preventing overheating; meanwhile, the other side of the substrate is provided with a plurality of Micro-LED chips, the surfaces of the Micro-LED chips are filled with quantum dot materials, the full-color display effect is achieved based on the color conversion layer technology, the scheme remarkably improves the heat dissipation efficiency, efficient and controllable heat management is achieved, the display function and the heat dissipation function are highly integrated, the space utilization rate is optimized, and the display effect is improved. The requirement for extra heat dissipation elements is reduced, the system cost and the manufacturing complexity are reduced, and the system is suitable for application scenes of miniaturization and high integration level.

Description

Technical Field

[0001] The present invention relates to the technical field of heat dissipation devices for Micro-LED full-color display devices, and in particular to a Micro-LED full-color display device with a cooling system. Background Art

[0002] Micro-LED display technology is widely regarded as the ultimate display technology due to its low power consumption, high stability and wide color gamut. At present, Micro-LED full-color display technology mainly includes mass transfer technology and color conversion layer technology. The former usually grows red, green and blue primary color Micro-LEDs on different wafers and integrates them on the same substrate to achieve full-color display, but the large-scale production of high-pixel density Micro-LED full-color displays places extremely high demands on the yield of mass transfer technology; the latter uses purple / blue light Micro-LED to excite fluorescent materials and convert purple / blue light into red and green light, thereby achieving RGB full-color display. Compared with mass transfer technology, the color conversion layer technology has a relatively simple structure, the process is easier to control, and no additional transfer steps are required.

[0003] In the color conversion layer technology, the front-mounted Micro-LED technology has been widely used, but its heat dissipation problem limits performance and reliability. Due to the use of materials with poor thermal conductivity such as sapphire as the substrate, heat is difficult to release quickly, resulting in local overheating and affecting the life of the display device. The color conversion layer coverage further limits heat dissipation and aggravates heat accumulation. Traditional heat dissipation methods such as heat sinks or surface heat dissipation are limited by the thermal conductivity of the material, and it is difficult to meet the needs of high-brightness, high-density display applications, and may increase the size and complexity of the equipment. Summary of the invention

[0004] The present invention provides a Micro-LED full-color display device with a cooling system and a preparation method thereof, the purpose of which is to provide a technical solution for directly contacting a coolant with a chip or directly integrating a heat dissipation system inside the device, so as to achieve efficient heat transfer and cooling performance, thereby improving the Micro-LED display performance and stability.

[0005] To achieve the above object, the present invention provides the following technical solutions:

[0006] A Micro-LED full-color display device with a cooling system, comprising a substrate, a groove being provided on one side of the substrate, and a sealing layer being provided on one side of the substrate, wherein the space enclosed by the sealing layer and the groove constitutes a cooling channel with openings at both ends;

[0007] A number of Micro-LED chips are provided on the other side of the substrate, and a light-blocking portion is filled between each of the Micro-LED chips. The light-blocking portion is higher than the Micro-LED chip, so that a portion of the adjacent light-blocking portions is filled with red quantum dot material, a portion of the adjacent light-blocking portions is filled with green quantum dot material, and the remaining portion of the adjacent light-blocking portions is not filled with quantum dot material.

[0008] Furthermore, the sealing layer includes a first sealing layer and a second sealing layer stacked on each other, the first sealing layer is arranged on one side of the substrate, the thickness of the first sealing layer is 50 nanometers to 200 nanometers, and the thickness of the second sealing layer is 1 micrometer to 3 micrometers.

[0009] Furthermore, the width of the groove ranges from 5 microns to 20 microns.

[0010] Furthermore, the light blocking portion includes a gray light blocking portion and a black light blocking portion, the gray light blocking portion is filled between each adjacent Micro-LED chip, and the black light blocking portion is filled between each quantum dot material.

[0011] Furthermore, the width of the gray light-resisting portion and the black light-resisting portion ranges from 1 micrometer to 2 micrometers, and the thickness ranges from 3 micrometers to 5 micrometers.

[0012] Furthermore, the thickness of the quantum dot material ranges from 3 microns to 5 microns.

[0013] A method for preparing a Micro-LED full-color display device as described above, characterized in that it comprises the following steps:

[0014] S1. Substrate preparation: remove impurities, grease and oxide layer on the surface;

[0015] S2, preparing a first sealing layer: depositing a first sealing layer on one surface of the substrate by chemical vapor deposition, physical vapor deposition or sputtering process;

[0016] S3, etching channel preparation: cutting a flow guide channel in the first sealing layer by laser cutting;

[0017] S4, cooling channel preparation: introducing etching solution into the guide channel, and etching the substrate with the etching solution, thereby forming a cooling channel;

[0018] S5. Preparation of the second sealing layer: sealing the flow guide channel by electroplating or polymer filling;

[0019] S6, Micro-LED chip installed;

[0020] S7, preparing a light blocking portion: filling a gray light blocking portion between each of the Micro-LED chips, and then setting a black light blocking portion on top of the gray light blocking portion;

[0021] S8, filling quantum dot material: filling red quantum dot material between some adjacent black light-resisting parts, filling green quantum dot material between some adjacent black light-resisting parts, and not filling quantum dot material between other adjacent black light-resisting parts.

[0022] Furthermore, in step S2, chemical vapor deposition is used, the temperature is set to 200°C-300°C, and the deposition rate is controlled to 0.5nm / s-1nm / s.

[0023] Furthermore, in step S3, the laser cutting power is controlled within 50 mW, and the cutting width is between 1 micron and 5 microns.

[0024] Furthermore, in step S4, the substrate is a silicon substrate, a sapphire substrate or a glass substrate;

[0025] For silicon substrates, a 20%-30% potassium hydroxide solution is used, the etching temperature is set to 70°C-80°C, and the etching time is controlled at 20 minutes-40 minutes;

[0026] For sapphire substrates, phosphoric acid is used, the temperature is set to 250°C-300°C, and the etching time is controlled within 10 minutes-20 minutes;

[0027] For the glass substrate, a 10-30% hydrofluoric acid solution is used for etching at room temperature, and the etching time is controlled within 10 minutes to 15 minutes.

[0028] Furthermore, in step S5, the flow channel is sealed by electroplating, and the current density is set to 5 mA / cm 2 , the thickness of the second sealing layer is controlled at 1 micron-3 microns.

[0029] The beneficial effects of the present invention are:

[0030] 1. The present invention proposes a Micro-LED full-color display device with a cooling system, including a substrate and a cooling channel arranged on the other side of the substrate, so that the cooling channel is integrated into the substrate, and a coolant is introduced into the cooling channel to absorb and take away the heat of the chip, thereby reducing the device temperature and preventing overheating; at the same time, a number of Micro-LED chips are arranged on the other side of the substrate, and quantum dot materials are filled on the surface of the Micro-LED chip, and a full-color display effect is achieved based on the color conversion layer technology. This solution significantly improves the heat dissipation efficiency, realizes efficient and controllable thermal management, and highly integrates the display and heat dissipation functions, optimizes space utilization, reduces the demand for additional heat dissipation components, reduces system cost and manufacturing complexity, and is suitable for miniaturized and highly integrated application scenarios.

[0031] 2. The present invention proposes a Micro-LED full-color display device, wherein the light-blocking portion includes a gray light-blocking portion and a black light-blocking portion. The gray light-blocking portion is filled between each adjacent Micro-LED chip, and the black light-blocking portion is filled between each quantum dot material, so as to reduce optical crosstalk and control light leakage of the color conversion layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0033] Figure 1 is a schematic diagram of a full-color display device of the present invention;

[0034] Figure 2 Schematic diagram of step S1 of the method for preparing a full-color display device of the present invention;

[0035] Figure 3 Schematic diagram of step S2 of the method for preparing a full-color display device of the present invention;

[0036] Figure 4 It is a schematic diagram of step S3 of the method for preparing a full-color display device of the present invention;

[0037] Figure 5 It is a schematic diagram of step S4 of the method for preparing a full-color display device of the present invention;

[0038] Figure 6 Schematic diagram of step S5 of the method for preparing a full-color display device of the present invention;

[0039] Fig. 7AThis is one of the schematic diagrams of step S6 of the method for preparing a full-color display device of the present invention;

[0040] Figure 7B The second schematic diagram of step S6 of the method for preparing a full-color display device of the present invention;

[0041] Figure 8 It is a schematic diagram of step S7 of the method for preparing a full-color display device of the present invention;

[0042] Fig. 9 It is a schematic diagram of step S8 of the method for preparing a full-color display device of the present invention;

[0043] In the figure, 10, substrate; 20, cooling channel; 30, Micro-LED chip; 401, red quantum dot material; 402, green quantum dot material; 501, first enclosing layer; 502, second enclosing layer; 601, gray light blocking part; 602, black light blocking part; 70, guide channel. DETAILED DESCRIPTION

[0044] Embodiment 1

[0045] Combine the following Figure 1 The present invention is described in detail.

[0046] A Micro-LED full-color display device with a cooling system includes a substrate 10, one side of the substrate 10 is provided with a groove, and also includes a closed layer arranged on one side of the substrate 10, the space enclosed by the closed layer and the groove constitutes a cooling channel 20 with openings at both ends; a plurality of Micro-LED chips 30 are arranged on the other side of the substrate 10, and light-blocking parts are filled between each Micro-LED chip 30, and the light-blocking parts are higher than the Micro-LED chips 30, so that a portion of adjacent light-blocking parts are filled with red quantum dot materials 401, a portion of adjacent light-blocking parts are filled with green quantum dot materials 402, and the remaining portion of adjacent light-blocking parts are not filled with quantum dot materials, wherein the thickness range of the red quantum dot material 401 and the green quantum dot material 402 is 3 microns to 5 microns.

[0047] In this embodiment, a cooling channel 20 is provided on the other side of the substrate 10, thereby integrating the cooling channel 20 into the substrate 10, and by passing a coolant into the cooling channel 20, the coolant is used to absorb and take away the heat of the chip, thereby reducing the device temperature and preventing overheating; at the same time, a plurality of Micro-LED chips 30 are provided on the other side of the substrate 10, and quantum dot materials are filled on the surface of the Micro-LED chip 30, and a full-color display effect is achieved based on the color conversion layer technology. This solution significantly improves the heat dissipation efficiency, realizes efficient and controllable thermal management, and highly integrates the display and heat dissipation functions, optimizes space utilization, reduces the demand for additional heat dissipation components, reduces system cost and manufacturing complexity, and is suitable for miniaturized and highly integrated application scenarios.

[0048] In this embodiment, the sealing layer includes a first sealing layer 501 and a second sealing layer 502 stacked on each other. The first sealing layer 501 is arranged on one side of the substrate 10. The thickness of the first sealing layer 501 is 50 nanometers to 200 nanometers, and the thickness of the second sealing layer 502 is 1 micrometer to 3 micrometers.

[0049] In this embodiment, the width of the groove, that is, the width of the cooling channel 20, is in the range of 5 microns to 20 microns. Furthermore, the inlet and outlet ends of the cooling channel 20 are respectively provided with interfaces with apertures in the range of 10 microns to 20 microns.

[0050] In this embodiment, the light blocking portion includes a gray light blocking portion 601 and a black light blocking portion 602. The gray light blocking portion 601 is filled between each adjacent Micro-LED chip 30, and the black light blocking portion 602 is filled between each quantum dot material, which is used to reduce optical crosstalk and control light leakage of the color conversion layer. Furthermore, the width of the gray light blocking portion 601 and the black light blocking portion 602 ranges from 1 micron to 2 microns, and the thickness ranges from 3 microns to 5 microns.

[0051] Embodiment 2

[0052] Combine the following Figure 2-Figure 9 The present invention is described in detail.

[0053] A method for preparing a Micro-LED full-color display device as described above comprises the following steps:

[0054] S1, substrate 10 preparation: remove surface impurities, grease and oxide layer, such as Figure 2 As shown;

[0055] S2, preparation of the first sealing layer 501: depositing the first sealing layer 501 on one side of the substrate 10 by chemical vapor deposition, physical vapor deposition or sputtering process, such as Figure 3 As shown;

[0056] S3, etching channel preparation: cutting the guide channel 70 in the first sealing layer 501 by laser cutting, such as Figure 4 As shown;

[0057] S4, preparation of cooling channel 20: the etching liquid is introduced into the guide channel 70, and the etching liquid etches the substrate 10, thereby forming the cooling channel 20, respectively. Figure 5 As shown;

[0058] S5, preparation of the second sealing layer 502: the flow guiding channel 70 is sealed by electroplating or polymer filling, respectively as follows: Figure 6 As shown;

[0059] S6, preparing the Micro-LED chip 30 by common chip preparation processes, such as cleaning, photolithography, etching, evaporation, deposition, etc. Fig. 7A and Figure 7B As shown;

[0060] S7, light blocking portion preparation: fill the gray light blocking portion 601 between each Micro-LED chip 30, and then set the black light blocking portion 602 on the top of the gray light blocking portion 601. Figure 8 As shown;

[0061] S8, filling quantum dot material: filling red quantum dot material 401 between some adjacent black light-resisting portions 602, filling green quantum dot material 402 between some adjacent black light-resisting portions 602, and not filling quantum dot material between other adjacent black light-resisting portions 602, such as Fig. 9 shown.

[0062] In this embodiment, in step S2, chemical vapor deposition is adopted, the temperature is set to 200° C.-300° C., and the deposition rate is controlled to 0.5 nm / s-1 nm / s.

[0063] In this embodiment, in step S3, the laser cutting power is controlled within 50 mW, and the cutting width is between 1 micron and 5 microns.

[0064] In this embodiment, in step S4, the substrate 10 is a silicon substrate 10, a sapphire substrate 10 or a glass substrate 10; for the silicon substrate 10, a 20%-30% potassium hydroxide solution is used, the etching temperature is set to 70°C-80°C, and the etching time is controlled at 20 minutes-40 minutes; for the sapphire substrate 10, phosphoric acid is used, the temperature is set to 250°C-300°C, and the etching time is controlled at 10 minutes-20 minutes; for the glass substrate 10, a 10-30% hydrofluoric acid solution is used, and the etching is carried out at room temperature for a time controlled at 10 minutes-15 minutes.

[0065] In this embodiment, in step S5, the flow channel 70 is sealed by electroplating, and the current density is set to 5 mA / cm 2 The thickness of the second sealing layer 502 is controlled to be between 1 micron and 3 microns.

[0066] The above embodiments are only for illustrating the technical concept and features of the present invention, and their purpose is to enable those skilled in the art to understand the content of the present invention and implement it, and they cannot be used to limit the protection scope of the present invention. Any equivalent changes or modifications made according to the spirit of the present invention should be included in the protection scope of the present invention.

Claims

1. A Micro-LED full-color display device with a cooling system, characterized in that: It comprises a substrate, one side of which is provided with a groove, and a sealing layer provided on one side of the substrate, wherein the space enclosed by the sealing layer and the groove constitutes a cooling channel with openings at both ends; A number of Micro-LED chips are provided on the other side of the substrate, and a light-blocking portion is filled between each of the Micro-LED chips. The light-blocking portion is higher than the Micro-LED chip, so that a portion of the adjacent light-blocking portions is filled with red quantum dot material, a portion of the adjacent light-blocking portions is filled with green quantum dot material, and the remaining portion of the adjacent light-blocking portions is not filled with quantum dot material.

2. The Micro-LED full-color display device according to claim 1, characterized in that: The sealing layer includes a first sealing layer and a second sealing layer stacked on each other. The first sealing layer is arranged on one side of the substrate. The thickness of the first sealing layer is 50 nanometers to 200 nanometers, and the thickness of the second sealing layer is 1 micrometer to 3 micrometers.

3. The Micro-LED full-color display device according to claim 1, characterized in that: The width of the groove ranges from 5 micrometers to 20 micrometers.

4. The Micro-LED full-color display device according to claim 1, characterized in that: The light blocking portion includes a gray light blocking portion and a black light blocking portion. The gray light blocking portion is filled between each adjacent Micro-LED chip, and the black light blocking portion is filled between each quantum dot material.

5. The Micro-LED full-color display device according to claim 4, characterized in that: The width of the gray light-resisting portion and the black light-resisting portion ranges from 1 micrometer to 2 micrometers, and the thickness ranges from 3 micrometers to 5 micrometers.

6. The Micro-LED full-color display device according to claim 1, characterized in that: The thickness of the quantum dot material ranges from 3 microns to 5 microns.

7. A method for preparing a Micro-LED full-color display device according to any one of claims 2 to 6, characterized in that: The steps include: S1. Substrate preparation: remove impurities, grease and oxide layer on the surface; S2, preparing a first sealing layer: depositing a first sealing layer on one surface of the substrate by chemical vapor deposition, physical vapor deposition or sputtering process; S3, etching channel preparation: cutting a flow guide channel in the first sealing layer by laser cutting; S4, cooling channel preparation: introducing etching solution into the guide channel, and etching the substrate with the etching solution, thereby forming a cooling channel; S5. Preparation of the second sealing layer: sealing the flow guide channel by electroplating or polymer filling; S6, Micro-LED chip installed; S7, preparing a light blocking portion: filling a gray light blocking portion between each of the Micro-LED chips, and then setting a black light blocking portion on top of the gray light blocking portion; S8, filling quantum dot material: filling red quantum dot material between some adjacent black light-resisting parts, filling green quantum dot material between some adjacent black light-resisting parts, and not filling quantum dot material between other adjacent black light-resisting parts.

8. The preparation method according to claim 7, characterized in that: In the step S2, chemical vapor deposition is adopted, the temperature is set to 200°C-300°C, and the deposition rate is controlled to 0.5nm / s-1nm / s.

9. The preparation method according to claim 7, characterized in that: In step S3, the laser cutting power is controlled within 50 mW, and the cutting width is between 1 micron and 5 microns.

10. The preparation method according to claim 7, characterized in that: In step S4, the substrate is a silicon substrate, a sapphire substrate or a glass substrate; For silicon substrates, a 20%-30% potassium hydroxide solution is used, the etching temperature is set to 70°C-80°C, and the etching time is controlled at 20 minutes-40 minutes; For sapphire substrates, phosphoric acid is used, the temperature is set to 250°C-300°C, and the etching time is controlled within 10 minutes-20 minutes; For the glass substrate, a 10-30% hydrofluoric acid solution is used for etching at room temperature, and the etching time is controlled within 10 minutes to 15 minutes.

11. The preparation method according to claim 7, characterized in that: In step S5, the flow channel is sealed by electroplating, and the current density is set to 5 mA / cm 2 , the thickness of the second sealing layer is controlled at 1 micron-3 microns.

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