Preparation method and application of acrylic hyperbranched photoresist resin

By using raw materials such as methacrylic acid, benzyl methacrylate and bicyclic[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride, the hyperbranched structure of the photoresist resin is solved, and the poor development effect and low resolution caused by the easy tangle of linear resin molecular chains is achieved, and a photoresist resin with high resolution and excellent development effect is achieved.

CN119874998AActive Publication Date: 2025-04-25WANSIDE NEW MATERIAL TECH (ZHONGSHAN) CO LTD
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Patent Information

Application Number
CN202510131795.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-02-06
Publication Date
2025-04-25
Estimated Expiration
2045-02-06

AI Technical Summary

Technical Problem

The linear acrylic-based resins in existing photoresist are prone to entanglement of molecular chains, resulting in poor development effect and low resolution. There are no relevant reports on the preparation technology of acrylic-based hyperbranched resins.

Method used

Methacrylic acid, benzyl methacrylate and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride were used as raw materials to form a linear polymer through double bond polymerization, and then pentaerythritol triacrylate was added as grafting agent. Based on the reaction of the acid anhydride and the hydroxyl group, a hyperbranched structure was constructed to obtain an acrylic hyperbranched photoresist resin.

Benefits of technology

The photoresist resin has excellent development effect and high resolution, which helps to manufacture an integrated circuit with higher accuracy. By adding pentaerythritol triacrylate in batches, side reactions are avoided, ensuring uniformity and high purity of molecular structure.

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Abstract

The invention relates to a preparation method and application of acrylic hyperbranched photoresist resin, and belongs to the technical field of resin. Methacrylic acid, benzyl methacrylate and bicyclo [2.2. 2] octyl-7-ene-2, 3, 5, 6-tetracarboxylic dianhydride are creatively used as raw materials and are subjected to double-bond polymerization to form a linear polymer firstly, then pentaerythritol triacrylate containing hydroxyl and alkenyl is added as a grafting agent, and the linear polymer is grafted on the basis of reaction of anhydride and hydroxyl, so that the linear polymer is obtained. The acrylic hyperbranched photoresist resin is used as a resin polymer to construct a hyperbranched structure, so that the acrylic hyperbranched photoresist resin is prepared, and after the acrylic hyperbranched photoresist resin is used as the resin polymer to prepare a photoresist, an excellent developing effect can be obtained, the resolution ratio is high, and the manufacturing of an integrated circuit with higher precision is facilitated.
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Description

Technical Field

[0001] The invention belongs to the technical field of resins, and in particular relates to a preparation method and application of an acrylic acid-based hyperbranched photoresist resin. Background Art

[0002] Photoresist, also known as photoresist, is a type of light- or radiation-sensitive composite material composed of resin polymers, photoinitiators, additives, etc. Its solubility, adhesion, thermal stability and other properties will change significantly before and after exposure. Among them, the resin polymers currently used to constitute photoresists are mostly linear acrylic resins, phenolic resins, etc., which leads to certain drawbacks in existing photoresists that limit their actual application effectiveness. This is because linear resin polymers are often prone to molecular chain entanglement, which is not conducive to subsequent development effects. The junction between the exposed area and the unexposed area is prone to molecular chain involvement, resulting in uneven cross-section and low resolution. In order to solve this problem, many existing technologies will choose to modify the resin polymer to construct a hyperbranched structure, and use the low entanglement, low viscosity and multi-functional group characteristics of the hyperbranched structure to improve the development effect. However, there is still no relevant report on the preparation of acrylic hyperbranched resins. Therefore, it is urgently necessary to make technical improvements and break through technical bottlenecks. Summary of the invention

[0003] In view of the problems existing in the prior art, the purpose of the present invention is to provide a preparation method and application of an acrylic hyperbranched photoresist resin. The present invention creatively uses methacrylic acid, benzyl methacrylate and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride as raw materials, so that the three are polymerized based on double bonds to first form a linear polymer, and then pentaerythritol triacrylate containing hydroxyl and alkenyl is added as a grafting agent, and a hyperbranched structure is constructed based on the reaction of anhydride and hydroxyl, thereby preparing an acrylic hyperbranched photoresist resin, which can obtain excellent development effect and high resolution after being used as a resin polymer to prepare a photoresist, and is conducive to manufacturing integrated circuits with higher precision.

[0004] The purpose of the present invention can be achieved through the following technical solutions:

[0005] A method for preparing an acrylic hyperbranched photoresist resin, the method comprising the following steps:

[0006] (1) Propylene glycol methyl ether acetate, methacrylic acid, benzyl methacrylate and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride are mixed under inert gas atmosphere and then added dropwise with stirring at 85-100° C. After the addition is completed, stirring is continued at a constant temperature until the C=C peak of the infrared spectrum disappears, thereby obtaining component A;

[0007] (2) Add the first pentaerythritol triacrylate, the catalyst and the polymerization inhibitor to the component A, then stir and mix at 100-115° C. for 15-16 hours, cool to 80-85° C., keep warm, then dropwise add the second pentaerythritol triacrylate while stirring, continue stirring at a constant temperature for 3-4 hours after the dropwise addition is completed, cool naturally to room temperature, and purify, and the preparation is completed.

[0008] As a preferred technical solution of the present invention, the inert gas atmosphere in step (1) refers to a nitrogen atmosphere.

[0009] As a preferred technical solution of the present invention, in step (1), the mass ratio of the propylene glycol methyl ether acetate, the methacrylic acid, the benzyl methacrylate and the bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride is 60-65:9-10:26-28:2.8-3.

[0010] As a preferred technical solution of the present invention, the dripping rate in step (1) is controlled at 18-20s / drop.

[0011] As a preferred technical solution of the present invention, the initiator solution in step (1) refers to a mixture obtained by stirring azobisisobutyronitrile and propylene glycol methyl ether acetate at a mass ratio of 4:96-98 for 10-15 minutes at room temperature; the amount of the solute in the initiator solution is 0.8-1% of the sum of the amounts of the methacrylic acid, the benzyl methacrylate and the bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride.

[0012] As a preferred technical solution of the present invention, the molar ratio of the first pentaerythritol triacrylate in step (2) to the bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride in step (1) is 1.8:1; the molar ratio of the first pentaerythritol triacrylate to the second pentaerythritol triacrylate is 1.8:0.25-0.3.

[0013] As a preferred technical solution of the present invention, the catalyst in step (2) is triphenylphosphine; the mass of the catalyst is 2% of the sum of the mass of the first pentaerythritol triacrylate and the second pentaerythritol triacrylate.

[0014] As a preferred technical solution of the present invention, the inhibitor in step (2) is p-hydroxyanisole; the mass of the inhibitor is 2% of the sum of the mass of the first pentaerythritol triacrylate and the second pentaerythritol triacrylate.

[0015] As a preferred technical solution of the present invention, the cooling rate in step (2) is 2-3°C / min.

[0016] As a preferred technical solution of the present invention, the dripping rate in step (2) is controlled at 2-4 drops / s.

[0017] As a preferred technical solution of the present invention, the purification in step (2) refers to adding n-hexane until the content is 85-90wt%, filtering, taking the precipitate, washing with n-hexane, and finally vacuum drying at 20-25°C until constant weight.

[0018] An application of an acrylic hyperbranched photoresist resin prepared by the preparation method as described above, wherein the acrylic hyperbranched photoresist resin is applied to photoresist.

[0019] Beneficial effects of the present invention:

[0020] (1) The present invention creatively uses methacrylic acid, benzyl methacrylate and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride as raw materials, so that the three are polymerized based on double bonds to first form a linear polymer, and then pentaerythritol triacrylate containing hydroxyl and alkenyl groups is added as a grafting agent, and a hyperbranched structure is constructed based on the reaction between the anhydride and the hydroxyl group, thereby preparing an acrylic hyperbranched photoresist resin. After the resin polymer is used to prepare a photoresist, it can obtain an excellent development effect and high resolution, which is conducive to the manufacture of integrated circuits with higher precision.

[0021] (2) The present invention creatively prepares an acrylic hyperbranched photoresist resin, which can be used as a resin polymer in the photoresist, and can effectively solve the problems of poor development effect and low resolution of linear polymers due to easy entanglement of molecular chains, and has a very good market application prospect. In addition, based on the fact that the hyperbranched structure needs to be constructed at a higher temperature, the present invention creatively adds pentaerythritol triacrylate in two steps, the first step is to directly add most of the pentaerythritol triacrylate, and the second step is to add the remaining pentaerythritol triacrylate by dropping at a lower temperature. This can effectively avoid the occurrence of side reactions, so that the hydroxyl group basically only reacts with the acid anhydride, and does not esterify with the carboxyl group, thereby ensuring the uniformity between the molecular structures, improving the purity, and correspondingly obtaining a more excellent technical effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to facilitate understanding by those skilled in the art, the present invention is further described below with reference to the accompanying drawings.

[0023] Figure 1 This is a flow chart for preparing the acrylic hyperbranched photoresist resin of Example 3 of the present invention.

[0024] Figure 2 The infrared spectra of the intermediate product and the final product when preparing the acrylic hyperbranched photoresist resin in Example 3 of the present invention are shown. DETAILED DESCRIPTION

[0025] In order to further explain the technical means and effects adopted by the present invention to achieve the predetermined invention purpose, the specific implementation methods, structures, features and effects of the present invention are described in detail below in conjunction with the accompanying drawings and preferred embodiments.

[0026] Example 1

[0027] A method for preparing an acrylic hyperbranched photoresist resin, the method comprising the following steps:

[0028] (1) Propylene glycol methyl ether acetate, methacrylic acid, benzyl methacrylate and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride are mixed under inert gas atmosphere and then added dropwise with stirring at 85° C. After the addition is completed, stirring is continued at a constant temperature until the C=C peak of the infrared spectrum disappears, thereby obtaining component A;

[0029] (2) Add the first pentaerythritol triacrylate, the catalyst and the polymerization inhibitor to the component A, and then stir and mix at 100° C. for 15 h, cool to 80° C., keep warm, and then dropwise add the second pentaerythritol triacrylate while stirring. After the dropwise addition is completed, continue to stir at a constant temperature for 3 h, cool naturally to room temperature, and purify. The preparation is completed.

[0030] The inert gas atmosphere in step (1) refers to a nitrogen atmosphere.

[0031] In step (1), the mass ratio of the propylene glycol methyl ether acetate, the methacrylic acid, the benzyl methacrylate and the bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride is 60:9:26:2.8.

[0032] The dropping rate of step (1) is controlled at 18 s / drop.

[0033] The initiator solution in step (1) refers to a mixture obtained by stirring azobisisobutyronitrile and propylene glycol methyl ether acetate at a mass ratio of 4:96 for 10 minutes at room temperature; the amount of the solute in the initiator solution is 0.8% of the sum of the amounts of the methacrylic acid, the benzyl methacrylate and the bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride.

[0034] The molar ratio of the first pentaerythritol triacrylate in step (2) to the bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride in step (1) is 1.8:1; the molar ratio of the first pentaerythritol triacrylate to the second pentaerythritol triacrylate is 1.8:0.25.

[0035] The catalyst in step (2) is triphenylphosphine; the mass of the catalyst is 2% of the sum of the mass of the first pentaerythritol triacrylate and the second pentaerythritol triacrylate.

[0036] The inhibitor in step (2) is p-hydroxyanisole; the mass of the inhibitor is 2% of the sum of the mass of the first pentaerythritol triacrylate and the second pentaerythritol triacrylate.

[0037] The cooling rate in step (2) is 2°C / min.

[0038] The dripping rate of step (2) is controlled at 2 drops / s.

[0039] The purification in step (2) refers to adding n-hexane until the content is 85wt%, filtering, taking the precipitate, washing with n-hexane, and finally vacuum drying at 20°C until constant weight.

[0040] An application of an acrylic hyperbranched photoresist resin prepared by the preparation method as described above, wherein the acrylic hyperbranched photoresist resin is applied to photoresist.

[0041] Example 2

[0042] A method for preparing an acrylic hyperbranched photoresist resin, the method comprising the following steps:

[0043] (1) Propylene glycol methyl ether acetate, methacrylic acid, benzyl methacrylate and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride are mixed under inert gas atmosphere and then added dropwise with stirring at 100° C. After the addition is completed, stirring is continued at a constant temperature until the C=C peak of the infrared spectrum disappears, thereby obtaining component A;

[0044] (2) Add the first pentaerythritol triacrylate, the catalyst and the polymerization inhibitor to the component A, and then stir and mix at 115° C. for 16 h, cool to 85° C., keep warm, and then dropwise add the second pentaerythritol triacrylate while stirring. After the dropwise addition is completed, continue to stir at a constant temperature for 4 h, cool naturally to room temperature, and purify. The preparation is completed.

[0045] The inert gas atmosphere in step (1) refers to a nitrogen atmosphere.

[0046] In step (1), the mass ratio of the propylene glycol methyl ether acetate, the methacrylic acid, the benzyl methacrylate and the bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride is 65:10:28:3.

[0047] The rate of the dropping in step (1) is controlled at 20s / drop.

[0048] The initiator solution in step (1) refers to a mixture obtained by stirring azobisisobutyronitrile and propylene glycol methyl ether acetate at a mass ratio of 4:98 for 15 minutes at room temperature; the amount of the solute in the initiator solution is 1% of the sum of the amounts of the methacrylic acid, the benzyl methacrylate and the bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride.

[0049] The molar ratio of the first pentaerythritol triacrylate in step (2) to the bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride in step (1) is 1.8:1; the molar ratio of the first pentaerythritol triacrylate to the second pentaerythritol triacrylate is 1.8:0.3.

[0050] The catalyst in step (2) is triphenylphosphine; the mass of the catalyst is 2% of the sum of the mass of the first pentaerythritol triacrylate and the second pentaerythritol triacrylate.

[0051] The inhibitor in step (2) is p-hydroxyanisole; the mass of the inhibitor is 2% of the sum of the mass of the first pentaerythritol triacrylate and the second pentaerythritol triacrylate.

[0052] The cooling rate in step (2) is 3°C / min.

[0053] The dripping rate of step (2) is controlled at 4 drops / s.

[0054] The purification in step (2) refers to adding n-hexane until the content is 90wt%, filtering, taking the precipitate, washing it with n-hexane, and finally vacuum drying it at 25°C until constant weight.

[0055] An application of an acrylic hyperbranched photoresist resin prepared by the preparation method as described above, wherein the acrylic hyperbranched photoresist resin is applied to photoresist.

[0056] Example 3

[0057] A method for preparing an acrylic hyperbranched photoresist resin, the method comprising the following steps:

[0058] (1) Propylene glycol methyl ether acetate, methacrylic acid, benzyl methacrylate and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride are mixed under inert gas atmosphere and then added dropwise with stirring at 100° C. After the addition is completed, stirring is continued at a constant temperature until the C=C peak of the infrared spectrum disappears, thereby obtaining component A;

[0059] (2) Add the first pentaerythritol triacrylate, the catalyst and the polymerization inhibitor to the component A, then stir and mix at 100° C. for 15.5 hours, cool to 83° C., keep warm, then dropwise add the second pentaerythritol triacrylate while stirring, continue stirring at a constant temperature for 3.5 hours after the dropwise addition is completed, cool naturally to room temperature, and purify, and the preparation is completed.

[0060] The inert gas atmosphere in step (1) refers to a nitrogen atmosphere.

[0061] In step (1), the mass ratio of the propylene glycol methyl ether acetate, the methacrylic acid, the benzyl methacrylate and the bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride is 63:9.5:27:2.9.

[0062] The rate of the dropping in step (1) is controlled at 19 s / drop.

[0063] The initiator solution in step (1) refers to a mixture obtained by stirring azobisisobutyronitrile and propylene glycol methyl ether acetate at a mass ratio of 4:97 for 13 minutes at room temperature; the amount of the solute in the initiator solution is 0.9% of the sum of the amounts of the methacrylic acid, the benzyl methacrylate and the bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride.

[0064] The molar ratio of the first pentaerythritol triacrylate in step (2) to the bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride in step (1) is 1.8:1; the molar ratio of the first pentaerythritol triacrylate to the second pentaerythritol triacrylate is 1.8:0.28.

[0065] The catalyst in step (2) is triphenylphosphine; the mass of the catalyst is 2% of the sum of the mass of the first pentaerythritol triacrylate and the second pentaerythritol triacrylate.

[0066] The inhibitor in step (2) is p-hydroxyanisole; the mass of the inhibitor is 2% of the sum of the mass of the first pentaerythritol triacrylate and the second pentaerythritol triacrylate.

[0067] The cooling rate in step (2) is 2.5°C / min.

[0068] The dripping rate of step (2) is controlled at 3 drops / s.

[0069] The purification in step (2) refers to adding n-hexane until the content is 88 wt%, filtering, taking the precipitate, washing it with n-hexane, and finally vacuum drying it at 23° C. until constant weight.

[0070] An application of an acrylic hyperbranched photoresist resin prepared by the preparation method as described above, wherein the acrylic hyperbranched photoresist resin is applied to photoresist.

[0071] Comparative Example 1

[0072] On the basis of Example 3, step (2) is changed to adding the first pentaerythritol triacrylate, the catalyst and the inhibitor to the component A, then stirring and mixing at 100° C. for 15.5 h, cooling to 83° C., keeping warm, then adding the second pentaerythritol triacrylate, continuing to stir at constant temperature for 3.5 h, naturally cooling to room temperature, and purifying, and the preparation is completed; the rest remains unchanged.

[0073] Comparative Example 2

[0074] On the basis of Example 3, step (2) is changed to adding the first pentaerythritol triacrylate, the catalyst and the inhibitor to the component A, and then stirring and mixing at 100° C. for 15.5 hours, then dropping the second pentaerythritol triacrylate while stirring, and after the dropwise addition is completed, stirring is continued at a constant temperature for 3.5 hours, and the mixture is naturally cooled to room temperature and purified, and the preparation is completed; the rest remains unchanged.

[0075] Comparative Example 3

[0076] On the basis of Example 3, step (2) is changed to adding pentaerythritol triacrylate, catalyst and inhibitor to component A, then stirring and mixing at 100° C. for 19 hours, naturally cooling to room temperature, and purifying, and the preparation is completed; the molar ratio of the pentaerythritol triacrylate in step (2) to the bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride in step (1) is 2.08:1; the catalyst in step (2) is triphenylphosphine; the mass of the catalyst is 2% of the mass of the pentaerythritol triacrylate; the inhibitor in step (2) is p-hydroxyanisole; the mass of the inhibitor is 2% of the mass of the pentaerythritol triacrylate; and the rest remain unchanged.

[0077] Test Example 1

[0078] Development effect test:

[0079] The acrylic hyperbranched photoresist resins prepared in Example 3 and Comparative Examples 1-3 are respectively prepared into photoresists, and the steps are as follows: the acrylic hyperbranched photoresist resin and propylene glycol methyl ether acetate are stirred for 60 minutes at room temperature in the dark to obtain a mixture with a solid content of 40wt%, and then 68% of the mixture, 3% of the photoinitiator system, 15% of tripropylene glycol diacrylate and 14% of butyl acetate are stirred for 30 minutes at room temperature in the dark to obtain; the photoinitiator system includes photoinitiator 907 and photoinitiator ITX; the mass ratio of the photoinitiator 907 to the photoinitiator ITX is 2:1.

[0080] The above photoresists were coated on copper plates, dried at 75°C for 30 min to form a dry film with a thickness of 30 μm, and then exposed through a mask with an exposure energy of 100 mJ / cm 2 Finally, the film was developed with a 1% by mass sodium carbonate solution at 30°C until the unexposed part was completely washed out, washed with deionized water, and vacuum dried at 25°C until constant weight. The film was observed under a scanning electron microscope and the resolution was recorded.

[0081] Table 1. Development effect test results

[0082] Resolution / μm Example 3 40 Comparative Example 1 44 Comparative Example 2 43 Comparative Example 3 45

[0083] From the comparison between Test Example 1, Example 3 and Comparative Examples 1-3, it can be seen that the acrylic hyperbranched photoresist resin prepared by the present invention can have a higher resolution after being prepared into a photoresist, which is higher than the resolution of general industrial photoresists (50-70 μm).

[0084] against Figure 1 Analysis:

[0085] This is a flow chart for preparing the acrylic hyperbranched photoresist resin of Example 3 of the present invention.

[0086] against Figure 2 Analysis:

[0087] The infrared spectra of the intermediate product and the final product in the preparation of acrylic hyperbranched photoresist resin in Example 3 of the present invention are shown in FIG. 1 . It can be seen that the C=C peak of the intermediate product (A) disappears, indicating that the C=C bonds react with each other to form a resin, and the strong anhydride peak appears, indicating the presence of a dianhydride group; the C=C peak of the final product (B) reappears, and the peak at 1890 cm -1 The nearby strong anhydride peak completely disappeared, which proved the successful synthesis of the target product.

[0088] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. Although the present invention has been disclosed as a preferred embodiment as above, it is not used to limit the present invention. Any technical personnel in this field can make some changes or modify the technical contents disclosed above into equivalent embodiments without departing from the scope of the technical solution of the present invention. However, any brief modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention are still within the scope of the technical solution of the present invention.

Claims

1. A method for preparing an acrylic hyperbranched photoresist resin, characterized in that: The preparation method comprises the following steps: (1) Propylene glycol methyl ether acetate, methacrylic acid, benzyl methacrylate and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride are mixed under inert gas atmosphere and then added dropwise with stirring at 85-100° C. After the addition is completed, stirring is continued at a constant temperature until the C=C peak of the infrared spectrum disappears, thereby obtaining component A; (2) Add the first pentaerythritol triacrylate, the catalyst and the polymerization inhibitor to the component A, then stir and mix at 100-115° C. for 15-16 hours, cool to 80-85° C., keep warm, then dropwise add the second pentaerythritol triacrylate while stirring, continue stirring at a constant temperature for 3-4 hours after the dropwise addition is completed, cool naturally to room temperature, and purify, and the preparation is completed.

2. The method for preparing an acrylic hyperbranched photoresist resin according to claim 1, characterized in that: In step (1), the mass ratio of the propylene glycol methyl ether acetate, the methacrylic acid, the benzyl methacrylate and the bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride is 60-65:9-10:26-28:2.8-3.

3. The method for preparing an acrylic hyperbranched photoresist resin according to claim 1, characterized in that: The initiator solution in step (1) refers to a mixture obtained by stirring azobisisobutyronitrile and propylene glycol methyl ether acetate at a mass ratio of 4:96-98 for 10-15 minutes at room temperature; the amount of the solute in the initiator solution is 0.8-1% of the sum of the amounts of the methacrylic acid, the benzyl methacrylate and the bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride.

4. The method for preparing an acrylic hyperbranched photoresist resin according to claim 1, characterized in that: The molar ratio of the first pentaerythritol triacrylate in step (2) to the bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride in step (1) is 1.8:1; the molar ratio of the first pentaerythritol triacrylate to the second pentaerythritol triacrylate is 1.8:0.25-0.

3.

5. The method for preparing an acrylic hyperbranched photoresist resin according to claim 1, characterized in that: The catalyst in step (2) is triphenylphosphine; the mass of the catalyst is 2% of the sum of the mass of the first pentaerythritol triacrylate and the second pentaerythritol triacrylate.

6. The method for preparing an acrylic hyperbranched photoresist resin according to claim 1, characterized in that: The inhibitor in step (2) is p-hydroxyanisole; the mass of the inhibitor is 2% of the sum of the mass of the first pentaerythritol triacrylate and the second pentaerythritol triacrylate.

7. The method for preparing an acrylic hyperbranched photoresist resin according to claim 1, characterized in that: The cooling rate in step (2) is 2-3°C / min.

8. The method for preparing an acrylic hyperbranched photoresist resin according to claim 1, characterized in that: The dripping rate in step (2) is controlled at 2-4 drops / s.

9. The method for preparing an acrylic hyperbranched photoresist resin according to claim 1, characterized in that: The purification in step (2) refers to adding n-hexane until the content is 85-90wt%, filtering, taking the precipitate, washing with n-hexane, and finally vacuum drying at 20-25°C until constant weight.

10. An application of an acrylic hyperbranched photoresist resin prepared by the preparation method according to any one of claims 1 to 9, characterized in that: The acrylic-based hyperbranched photoresist resin is applied in photoresist.

Citation Information

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