Metal evaporation method and system

Abstract

The invention provides a metal evaporation method and system, and the method comprises the steps: placing a to-be-evaporated silicon wafer on an evaporation platform in an evaporation cavity, and controlling the vacuum degree of the evaporation cavity to be in a first vacuum interval; nitrogen is introduced into the evaporation cavity, and the vacuum degree of the evaporation cavity is adjusted in the nitrogen introduction process, so that the vacuum degree of the evaporation cavity is in a second vacuum interval; a baking lamp in the evaporation cavity is controlled to be turned on, the evaporation cavity is heated and baked through the baking lamp and nitrogen in the evaporation cavity, and the temperature of the evaporation cavity is made to be within a first temperature interval; when the temperature in the evaporation cavity is in a second temperature interval, the vacuum degree of the evaporation cavity is adjusted to a third vacuum interval, the first metal is evaporated, and the first metal is evaporated to the silicon wafer to be evaporated; and the temperature in the evaporation cavity is controlled to be within a third temperature interval, and all the metal after the first metal is evaporated in sequence. The working efficiency is improved, and the pollution risk and the metal falling problem are reduced.

Description

Technical Field

[0001] The present application relates to the technical field of metal evaporation, and in particular to a metal evaporation method and system. Background Art

[0002] Metal evaporation is one of the important processes in semiconductor device technology, which determines the electrical parameters of the device.

[0003] The conventional evaporation process is "evaporation cleaning--evaporation of aluminum--alloy--evaporation of silver". In the process of evaporating aluminum, the temperature is generally set at 140-200 degrees, and the temperature is transferred by the heat radiation of the baking lamp in a vacuum environment to evaporate aluminum. This method leads to low operating efficiency. Due to the low temperature, effective ohmic contact between silicon and aluminum cannot be effectively achieved, resulting in a large contact resistance of the product, which affects the product performance. Therefore, it is necessary to add an alloy step after evaporating aluminum, and then evaporate silver.

[0004] However, this method requires the product to enter and exit the equipment many times, which increases the workload and easily leads to product contamination, which may cause metal loss on the back of the product after silver evaporates. Summary of the invention

[0005] The purpose of the present application is to provide a metal evaporation method and system to improve the accuracy of metal evaporation in view of the deficiencies in the above-mentioned prior art.

[0006] To achieve the above purpose, the technical solution adopted in the embodiment of the present application is as follows:

[0007] In a first aspect, an embodiment of the present application provides a metal evaporation method, the method comprising:

[0008] Placing the silicon wafer to be evaporated on an evaporation table in an evaporation chamber, and controlling the vacuum degree of the evaporation chamber to be in a first vacuum range;

[0009] introducing nitrogen into the evaporation chamber, and adjusting the vacuum degree of the evaporation chamber during the nitrogen introduction process so that the vacuum degree of the evaporation chamber is in a second vacuum range;

[0010] Controlling the heating lamp in the evaporation chamber to light up, so as to heat and bake the evaporation chamber through the heating lamp and the nitrogen in the evaporation chamber, so that the temperature of the evaporation chamber is in a first temperature range;

[0011] When the temperature in the evaporation chamber is in the second temperature range, adjusting the vacuum degree of the evaporation chamber to a third vacuum range, evaporating the first metal, and evaporating the first metal onto the silicon wafer to be evaporated to obtain a first alloy;

[0012] The temperature in the evaporation chamber is controlled to be in a third temperature range, and each metal after the first metal is evaporated in sequence.

[0013] Optionally, controlling the state in the evaporation chamber to be in the first vacuum interval includes:

[0014] The second valve in the high vacuum branch is opened, and the vacuum pump group is controlled to evacuate the evaporation chamber until the vacuum degree in the evaporation chamber is in the first vacuum range, and the second valve is closed.

[0015] Optionally, the introducing nitrogen into the evaporation chamber and adjusting the vacuum degree of the evaporation chamber during the nitrogen introduction process so that the vacuum degree of the evaporation chamber is in the second vacuum range includes:

[0016] Open the third valve and the fourth valve in the nitrogen injection branch, and open the first valve and the butterfly valve in the vacuum speed control branch;

[0017] Nitrogen is injected into the evaporation chamber through the third valve and the fourth valve, and the speed at which the vacuum pump group evacuates the evaporation chamber is controlled through the butterfly valve, so that the vacuum degree of the evaporation chamber is in the second vacuum range.

[0018] Optionally, controlling the heating lamp in the evaporation chamber to light up includes:

[0019] Controlling a plurality of baking lamps located at the bottom of the evaporation chamber to light up.

[0020] Optionally, adjusting the vacuum degree of the evaporation chamber to a third vacuum interval includes:

[0021] When the temperature of the evaporation chamber is within the second temperature range, the nitrogen injection branch and the vacuum speed control branch are controlled to be closed, and the high vacuum branch is opened, and the vacuum pump group is controlled to evacuate the evaporation chamber so that the vacuum degree of the evaporation chamber is within the third vacuum range.

[0022] Optionally, controlling the temperature in the evaporation chamber to be in a third temperature range includes:

[0023] Turn off the baking lamp in the evaporation chamber, close the second valve in the high vacuum branch, and open the nitrogen injection branch and the vacuum speed control branch;

[0024] Nitrogen is injected into the evaporation chamber through the nitrogen injection branch, and the vacuum degree of the evaporation chamber is maintained in the fourth vacuum range through the vacuum speed control branch, until the temperature in the evaporation chamber is in the third temperature range, the nitrogen injection branch and the vacuum speed control branch are closed, and the high vacuum branch is opened to evacuate the evaporation chamber until the vacuum degree of the evaporation chamber is in the third vacuum range.

[0025] Optionally, the first vacuum interval is when the vacuum degree in the evaporation chamber is 1E -3 Toor~1E -5 Toor range, the second vacuum range is that the vacuum degree in the evaporation chamber is in the range of 50 to 500 MToor.

[0026] Optionally, the third vacuum interval is a vacuum degree in the evaporation chamber less than 1E -3 Toor, the fourth vacuum interval is that the vacuum degree of the evaporation chamber is in the range of 300-700 MToor.

[0027] Optionally, the first temperature range is 200 degrees to 400 degrees, and the second temperature range is 300 degrees to 400 degrees.

[0028] In a second aspect, an embodiment of the present application further provides a metal evaporation system, comprising: a control device and an evaporation device, wherein the control device is communicatively connected with the evaporation device;

[0029] The evaporation device comprises: an evaporation chamber, an evaporation table in the evaporation chamber, a baking lamp, a nitrogen injection branch, a high vacuum branch and a vacuum speed control branch;

[0030] The control device is used to perform metal evaporation based on the method described in the first aspect.

[0031] In a third aspect, an embodiment of the present application further provides an electronic device, comprising: a processor, a storage medium and a bus, wherein the storage medium stores program instructions executable by the processor, and when an application is running, the processor communicates with the storage medium via the bus, and the processor executes the program instructions to perform the steps of the metal evaporation method described in the first aspect above.

[0032] In a fourth aspect, an embodiment of the present application further provides a computer-readable storage medium, on which a computer program is stored, and the computer program is read and executes the steps of the metal evaporation method described in the first aspect above.

[0033] The beneficial effects of this application are:

[0034] The present application provides a metal evaporation method and system, which places a silicon wafer to be evaporated on an evaporation table in an evaporation chamber, controls the vacuum of the evaporation chamber to be in a first vacuum range, introduces nitrogen into the evaporation chamber, and adjusts the vacuum of the evaporation chamber during the nitrogen introduction process, and controls the heating lamp in the evaporation chamber to light up when the vacuum of the evaporation chamber is in a second vacuum range, so as to heat and bake the evaporation chamber by the heating lamp and the nitrogen in the evaporation chamber, and the temperature of the evaporation chamber is in the first temperature range; in the first temperature range, water vapor in the evaporation chamber can be removed, and organic matter on the surface of the evaporation chamber can be separated and removed; when the temperature in the evaporation chamber is in the second temperature range, the vacuum of the evaporation chamber is adjusted to a third vacuum range, and a first metal is evaporated, and the first metal is evaporated to the silicon wafer to be evaporated to obtain a first alloy; effective ohmic contact between the first metal and the silicon wafer can be effectively achieved, thereby reducing the on-resistance of the product, and reducing the process of alloying after evaporation in the prior art, thereby reducing the number of times the silicon wafer enters and exits the evaporation chamber, reducing the work intensity, and avoiding potential unnecessary pollution. The temperature in the evaporation chamber is controlled to be in the third temperature range, and each metal after the first metal is evaporated in turn, which can effectively prevent the silver from falling off. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0036] Figure 1 A schematic diagram of the architecture of a metal evaporation system provided in an embodiment of the present application;

[0037] Figure 2 A schematic diagram of a process of a metal evaporation method provided in an embodiment of the present application;

[0038] Figure 3 A structural block diagram of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0039] To make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. It should be understood that the drawings in the present application only serve the purpose of explanation and description and are not used to limit the scope of protection of the present application. In addition, it should be understood that the schematic drawings are not drawn in real proportion. The flowchart used in this application shows the operations implemented according to some embodiments of the present application. It should be understood that the operations of the flowchart can be implemented out of order, and the steps without logical context can be reversed in order or implemented simultaneously. In addition, those skilled in the art can add one or more other operations to the flowchart under the guidance of the content of the present application, or remove one or more operations from the flowchart.

[0040] In addition, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application claimed for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application.

[0041] It should be noted that the term "comprising" will be used in the embodiments of the present application to indicate the existence of the features declared thereafter, but does not exclude the addition of other features.

[0042] Figure 1 A schematic diagram of the architecture of a metal evaporation system provided in an embodiment of the present application is shown in FIG. Figure 1 As shown, the metal evaporation system includes a control device and an evaporation device, and the control device can be connected to the evaporation device for communication, wherein the control device can be an electronic device, such as a mobile phone, a tablet computer, a laptop computer, a PDA, a desktop computer, or other terminal device with computing and display capabilities, or can also be a server. The control device executes the method steps of the present application.

[0043] The evaporation device may include an evaporation chamber, an evaporation table in the evaporation chamber, a heating lamp, a nitrogen injection branch, a high vacuum branch, and a vacuum speed control branch. One side of the evaporation chamber is connected to the nitrogen injection branch, the high vacuum branch, and the vacuum speed control branch, respectively. The high vacuum branch and the vacuum speed control branch are both connected to the vacuum pump group.

[0044] Among them, the vacuum pumping speed of the high vacuum branch is higher than the vacuum pumping speed of the vacuum speed control branch. The vacuum pumping speed of the high vacuum branch is fixed, and the vacuum pumping speed of the vacuum speed control branch is variable. Specifically, the vacuum pumping speed can be controlled based on the opening size of the butterfly valve in the vacuum speed control branch.

[0045] Continue as Figure 1 As shown, the vacuum speed control branch includes a first valve and a butterfly valve, the butterfly valve is connected to the vacuum pump group, and the butterfly valve can be used to control the speed of the vacuum pump group to evacuate. The high vacuum branch includes a second valve, the second valve is connected to the vacuum pump group, and when the second valve is opened, the vacuum pump group can perform high-speed vacuum operation. The nitrogen injection branch includes a third valve, a fourth valve and a mass flow meter, and the fourth valve is used to connect nitrogen. When the third valve, the fourth valve and the mass flow meter are opened, nitrogen can be injected into the evaporation chamber.

[0046] The evaporation chamber also includes a vacuum gauge and a thermometer, which can measure the vacuum degree of the evaporation chamber and feed back the vacuum degree to the control device.

[0047] The control device can control the valves on each branch of the evaporation device, control the opening and closing of the vacuum pump group, and control the opening and closing of the baking lamp in the evaporation chamber.

[0048] Figure 2 The following is a schematic flow chart of a metal evaporation method provided in an embodiment of the present application. The method can be completed by the above-mentioned control device, for example. Figure 2 As shown, the method includes:

[0049] S101, placing a silicon wafer to be evaporated on an evaporation table in an evaporation chamber, and controlling the vacuum degree of the evaporation chamber to be in a first vacuum range.

[0050] Optionally, the evaporation table is located at the upper end of the evaporation chamber, and after the silicon wafer to be evaporated is placed on the evaporation table of the evaporation chamber, the control device can control the vacuum degree of the evaporation chamber to be in a first vacuum interval. The first vacuum interval can indicate that the evaporation chamber has reached a high vacuum state.

[0051] S102, introducing nitrogen into the evaporation chamber, and adjusting the vacuum degree of the evaporation chamber during the nitrogen introduction process, so that the vacuum degree of the evaporation chamber is in a second vacuum range.

[0052] The vacuum degree in the first vacuum interval is greater than the vacuum degree in the second vacuum interval, that is, the minimum vacuum degree in the first vacuum interval is greater than the maximum vacuum degree in the second vacuum interval.

[0053] Optionally, when the vacuum degree of the evaporation chamber is in the first vacuum interval, the control device can control the evaporation device to pass nitrogen into the evaporation chamber in the evaporation device, and the vacuum degree of the evaporation chamber can also be adjusted during the process of passing nitrogen. Specifically, when nitrogen is passed into the evaporation chamber, the vacuum gauge in the evaporation chamber can also detect the vacuum degree of the evaporation chamber in real time, and send the detected vacuum degree to the control device, and the control device adjusts the vacuum degree of the evaporation chamber according to the received vacuum degree.

[0054] Among them, when the vacuum degree of the evaporation chamber is in the second vacuum range, it means that the evaporation chamber is in an anaerobic state at this time, which can avoid oxidation of metal and silicon wafers to be evaporated, and heat conduction inside the evaporation chamber can be achieved in the second vacuum range.

[0055] S103, controlling the baking lamp in the evaporation chamber to light up, so as to heat and bake the evaporation chamber through the baking lamp and the nitrogen in the evaporation chamber, so that the temperature of the evaporation chamber is within a first temperature range.

[0056] Optionally, when the control device receives feedback from the vacuum gauge in the evaporation chamber that the vacuum degree of the evaporation chamber is in the second vacuum range, the control device can control the heating lamp in the evaporation chamber to light up. At this time, since there is nitrogen in the evaporation chamber, the evaporation chamber can be heated and baked by the heating lamp and the nitrogen in the evaporation chamber. At the same time, the thermometer in the evaporation chamber can feed back the temperature of the evaporation chamber to the control device in real time, and the control device can control the heating lamp to heat and bake the evaporation chamber to the first temperature range. In the first temperature range, the water vapor in the evaporation chamber can be removed, and the organic matter on the surface of the evaporation chamber can also be separated and removed.

[0057] Optionally, during the heating process, the evaporation chamber can be heated and baked by a baking lamp and nitrogen at the same time to increase the heating rate. Thermal radiation is light irradiation under vacuum conditions. Gas is added on the basis of thermal radiation. The heating and cooling rates can be increased through the effect of gas carrying, thereby improving the efficiency of the operation process.

[0058] S104, when the temperature in the evaporation chamber is in the second temperature range, adjusting the vacuum degree of the evaporation chamber to a third vacuum range, and evaporating the first metal, evaporating the first metal onto the silicon wafer to be evaporated, to obtain a first alloy.

[0059] The second temperature interval is included in the first temperature interval, and the second temperature interval is a high temperature interval in the first temperature interval. The vacuum degree in the second vacuum interval is less than the vacuum degree in the third vacuum interval, that is, the maximum vacuum degree in the second vacuum interval is less than the minimum vacuum degree in the third vacuum interval.

[0060] Optionally, the control device receives the temperature feedback from the thermometer in the evaporation chamber. When the control device determines that the temperature in the evaporation chamber is stably in the second temperature range based on the received temperature, the control device adjusts the vacuum degree in the evaporation chamber to the third vacuum range. When the temperature in the evaporation chamber is in the second temperature range and the vacuum degree in the evaporation chamber is in the third vacuum range, the first metal is evaporated. Specifically, the first metal can be evaporated using an electronic cavity. The first metal is evaporated onto the surface of the silicon wafer to be evaporated, thereby realizing the alloying process of the first metal and the silicon wafer to be evaporated, and obtaining the first alloy, wherein the first metal can be metallic aluminum.

[0061] Optionally, the temperature in the second temperature range is higher than the temperature when evaporating aluminum in the conventional process, which can effectively achieve effective ohmic contact between the first metal and the silicon wafer, thereby reducing the on-resistance of the product and reducing the need for alloying processes after evaporation in the prior art, thereby reducing the number of times the silicon wafer enters and exits the evaporation chamber, reducing work intensity, and avoiding potential unnecessary pollution.

[0062] S105 , controlling the temperature in the evaporation chamber to be in a third temperature range, and evaporating each metal after the first metal in turn.

[0063] The temperature in the third temperature interval is lower than the temperature in the first temperature interval, that is, the maximum temperature in the third temperature interval is lower than the minimum temperature in the first temperature interval.

[0064] Optionally, when the vacuum degree of the evaporation chamber is in the third vacuum range, the temperature in the evaporation chamber is adjusted from the second temperature range to the temperature in the third temperature range, and each metal after the first metal is evaporated in sequence. The metals after the first metal may include titanium, nickel and silver.

[0065] Optionally, the evaporation chamber may also include a dry pot, each of which is used to place a metal. When evaporating each metal after the first metal, the metals after the first metal can be evaporated by switching the dry pot and switching the dry pot to a preset evaporation position. Specifically, after evaporating the first metal, the dry pot containing titanium can be switched to a preset evaporation position to evaporate titanium. When titanium evaporates to the surface of the silicon wafer and reaches a certain thickness, the dry pot containing nickel is switched to a preset evaporation position to evaporate nickel. When nickel evaporates to the surface of the silicon wafer and reaches a certain thickness, the dry pot containing silver is switched to a preset evaporation position to evaporate silver, so that silver evaporates to the surface of the silicon wafer and reaches a certain thickness before the evaporation is stopped.

[0066] Optionally, by evaporating titanium and nickel first and then evaporating silver, titanium, nickel and silver are combined together to effectively prevent the silver from falling off.

[0067] In this embodiment, the silicon wafer to be evaporated is placed on an evaporation table in an evaporation chamber, and when the vacuum degree of the evaporation chamber is controlled to be in a first vacuum interval, nitrogen is introduced into the evaporation chamber, and the vacuum degree of the evaporation chamber is adjusted during the nitrogen introduction process. When the vacuum degree of the evaporation chamber is in a second vacuum interval, the baking lamp in the evaporation chamber is controlled to light up, so that the evaporation chamber is heated and baked by the baking lamp and the nitrogen in the evaporation chamber, and the temperature of the evaporation chamber is in the first temperature interval; in the first temperature interval, the water vapor in the evaporation chamber can be removed, and the organic matter on the surface of the evaporation chamber can also be separated and removed; when the temperature in the evaporation chamber is in the second temperature interval, the vacuum degree of the evaporation chamber is adjusted to a third vacuum interval, and the first metal is evaporated, and the first metal is evaporated to the silicon wafer to be evaporated to obtain a first alloy; effective ohmic contact between the first metal and the silicon wafer can be effectively achieved, thereby reducing the on-resistance of the product, and reducing the process of alloying after the evaporation in the prior art, thereby reducing the number of times the silicon wafer enters and exits the evaporation chamber, reducing the work intensity, and also avoiding potential unnecessary pollution. The temperature in the evaporation chamber is controlled to be in the third temperature range, and each metal after the first metal is evaporated in turn, which can effectively prevent the silver from falling off.

[0068] Optionally, in the above step S101, controlling the vacuum degree of the evaporation chamber to be in the first vacuum range may include:

[0069] Specifically, the second valve in the high vacuum branch can be opened to control the vacuum pump group to evacuate the evaporation chamber until the vacuum degree of the evaporation chamber is in the first vacuum interval, and then the second valve is closed. When the second valve in the high vacuum branch is opened, the first valve and the butterfly valve in the vacuum speed control branch are closed, and the third valve and the fourth valve in the nitrogen injection branch are also closed. At this time, only the second valve in the high vacuum branch needs to be opened to control the vacuum pump group to evacuate the evaporation chamber at a high speed, so that the vacuum degree of the evaporation chamber is any vacuum degree in the first vacuum interval.

[0070] The first vacuum interval can be 1E -3 Toor~1E -5 Toor.

[0071] Optionally, in the above step S102, nitrogen is introduced into the evaporation chamber, and the vacuum degree of the evaporation chamber is adjusted during the nitrogen introduction process so that the vacuum degree of the evaporation chamber is in the second vacuum range, which may include:

[0072] Specifically, the third valve and the fourth valve in the nitrogen injection branch can be opened, and the first valve and the butterfly valve in the vacuum speed control branch can be opened. Nitrogen can be injected into the evaporation chamber through the third valve and the fourth valve, and the speed at which the vacuum pump group evacuates the evaporation chamber can be controlled through the butterfly valve, so that the vacuum degree of the evaporation chamber is in the second vacuum range.

[0073] Optionally, when the control device controls the third valve and the fourth valve to open, nitrogen can be injected into the evaporation chamber, and the mass flow meter can collect and control the flow rate of the injected nitrogen. When the nitrogen is injected into the evaporation chamber, the vacuum degree in the evaporation chamber will also change. The control device can receive the vacuum degree feedback from the vacuum gauge, and control the opening size of the butterfly valve based on the received vacuum degree of the evaporation chamber, thereby controlling the speed at which the vacuum pump group evacuates the evaporation chamber, ensuring that the vacuum degree of the evaporation chamber is in the second vacuum range, that is, ensuring that the evaporation chamber is in anaerobic conditions, avoiding oxidation of metals and silicon wafers, and at the same time achieving effective heat conduction inside the evaporation chamber.

[0074] The second vacuum range is that the vacuum degree of the evaporation chamber is in the range of 50 to 500 MToor.

[0075] Optionally, controlling the lighting of the heating lamp in the evaporation chamber in S103 may include:

[0076] like Figure 1 As shown, the baking lamp in the evaporation chamber is located at the bottom of the evaporation chamber and includes multiple baking lamps. When the vacuum degree of the evaporation chamber is in the second vacuum range, the control device can control the multiple baking lamps to light up at the same time. At this time, the baking lamp realizes heat radiation under vacuum conditions, and the evaporation chamber also contains nitrogen. Through the effect of gas carrying, the speed of temperature rise in the evaporation chamber is increased, and the working efficiency is improved, so that the temperature of the evaporation chamber is in the first temperature range, wherein the first temperature range is 200 degrees to 400 degrees.

[0077] Optionally, in the above step S104, adjusting the vacuum degree of the evaporation chamber to the third vacuum range may include:

[0078] Optionally, when the temperature of the evaporation chamber is in the second temperature range, the nitrogen injection branch and the vacuum speed control branch are controlled to be closed, and the high vacuum branch is opened, and the vacuum pump group is controlled to evacuate the evaporation chamber so that the vacuum degree of the evaporation chamber is in the third vacuum range.

[0079] Specifically, when the temperature of the evaporation chamber is in the second temperature range, that is, when the temperature feedback received by the control device from the thermometer in the evaporation chamber is stable in the second temperature range, the third valve and the fourth valve on the nitrogen injection branch are controlled to be closed, the first valve and the butterfly valve on the vacuum speed control branch are controlled to be closed, and the second valve on the high vacuum branch is controlled to be opened. The vacuum pump group can perform high-speed vacuum operation on the evaporation chamber through the second valve so that the vacuum degree of the evaporation chamber is in the third vacuum range.

[0080] Among them, the third vacuum interval is the vacuum degree of the evaporation chamber is less than 1E -3 The second temperature range is 300 to 400 degrees.

[0081] In this embodiment, when the temperature of the evaporation chamber is stable in the second temperature range, that is, stable between 300 degrees and 400 degrees, and the vacuum degree is less than 1E -3 When Toor is used, aluminum can be evaporated so that aluminum evaporates from the surface of the silicon wafer and an alloy process of the silicon wafer and aluminum can be achieved, thereby reducing the on-resistance of the product and avoiding the need for an alloy process after the existing evaporation.

[0082] Optionally, in the above step S105, controlling the temperature of the evaporation chamber to be in the third temperature range may include:

[0083] Optionally, when aluminum evaporation is completed, the control device can turn off the heating lamp in the evaporation chamber, close the second valve in the high vacuum branch, and open the nitrogen injection branch and the vacuum speed control branch. Specifically, the third valve and the fourth valve on the nitrogen injection branch can be opened, and the first valve and the butterfly valve on the vacuum speed control branch can be opened. When the heating lamp is turned off, the temperature in the evaporation chamber drops.

[0084] Optionally, when the third valve and the fourth valve on the nitrogen injection branch are opened, and the first valve and the butterfly valve on the vacuum speed control branch are opened, nitrogen can be injected into the evaporation chamber through the nitrogen injection branch. At the same time, during the process of injecting nitrogen, the vacuum degree in the evaporation chamber will change. The control device can control the size of the butterfly valve on the vacuum speed control branch based on the received vacuum degree of the evaporation chamber, thereby controlling the speed at which the vacuum pump group evacuates the evaporation chamber, so that the vacuum degree of the evaporation chamber is maintained in the fourth vacuum range. During this process, the temperature of the evaporation chamber decreases. When the temperature of the evaporation chamber drops to the third temperature range, the nitrogen injection branch and the vacuum speed control branch are closed, and the high vacuum branch is opened to control the vacuum pump group to evacuate the evaporation chamber at a high speed, so that the vacuum degree of the evaporation chamber is in the third vacuum range.

[0085] Then, the conditions for evaporating the metals after the first metal are different from the conditions for evaporating the first metal, that is, the temperature for evaporating the metals after the first metal is lower than the temperature for evaporating the first metal.

[0086] The third temperature range is 140 to 200 degrees, and the fourth vacuum range is that the vacuum degree of the evaporation chamber is 300 to 700 MToor.

[0087] Optionally, after evaporation of all metals after the first metal is completed, the evaporated silicon wafer can be taken out from the evaporation table, thus achieving the integration of the original manufacturing process.

[0088] Figure 3 2 is a structural block diagram of an electronic device 200 provided in an embodiment of the present application. The electronic device may be, for example, the control device described in the above embodiment. Figure 3 As shown, the electronic device may include: a processor 201 and a memory 202 .

[0089] Optionally, a bus 203 may also be included, wherein the memory 202 is used to store machine-readable instructions executable by the processor 201. When the electronic device 200 is running, the processor 201 communicates with the memory 202 through the bus 203. When the machine-readable instructions are executed by the processor 201, the method steps in the above method embodiment are performed.

[0090] The embodiment of the present application further provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the method steps in the above-mentioned metal evaporation method embodiment are executed.

[0091] Those skilled in the art can clearly understand that, for the convenience and simplicity of description, the specific working process of the system and device described above can refer to the corresponding process in the method embodiment, and will not be repeated in this application. In the several embodiments provided in this application, it should be understood that the disclosed system, device and method can be implemented in other ways. The device embodiments described above are merely schematic. For example, the division of the modules is only a logical function division. There may be other division methods in actual implementation. For example, multiple modules or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some communication interfaces, indirect coupling or communication connection of devices or modules, which can be electrical, mechanical or other forms.

[0092] In addition, each functional unit in each embodiment of the present application can be integrated into a processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. If the function is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application is essentially or the part that contributes to the prior art or the part of the technical solution can be embodied in the form of a software product, and the computer software product is stored in a storage medium, including several instructions to enable a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, RandomAccess Memory), disk or optical disk and other media that can store program code.

[0093] The above are only specific implementation methods of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be covered by the protection scope of the present application.

Claims

1. A metal evaporation method, characterized in that: The method comprises: Placing the silicon wafer to be evaporated on an evaporation table in an evaporation chamber, and controlling the vacuum degree of the evaporation chamber to be in a first vacuum range; introducing nitrogen into the evaporation chamber, and adjusting the vacuum degree of the evaporation chamber during the nitrogen introduction process so that the vacuum degree of the evaporation chamber is in a second vacuum range; Controlling the heating lamp in the evaporation chamber to light up, so as to heat and bake the evaporation chamber through the heating lamp and the nitrogen in the evaporation chamber, so that the temperature of the evaporation chamber is in a first temperature range; When the temperature in the evaporation chamber is in the second temperature range, adjusting the vacuum degree of the evaporation chamber to a third vacuum range, evaporating the first metal, and evaporating the first metal onto the silicon wafer to be evaporated to obtain a first alloy; The temperature in the evaporation chamber is controlled to be in a third temperature range, and each metal after the first metal is evaporated in sequence.

2. The metal evaporation method according to claim 1, characterized in that: The controlling the state in the evaporation chamber to be in the first vacuum range includes: The second valve in the high vacuum branch is opened, and the vacuum pump group is controlled to evacuate the evaporation chamber until the vacuum degree in the evaporation chamber is in the first vacuum range, and the second valve is closed.

3. The metal evaporation method according to claim 1, characterized in that: The step of introducing nitrogen into the evaporation chamber and adjusting the vacuum degree of the evaporation chamber during the nitrogen introduction process so that the vacuum degree of the evaporation chamber is in the second vacuum range includes: Open the third valve and the fourth valve in the nitrogen injection branch, and open the first valve and the butterfly valve in the vacuum speed control branch; Nitrogen is injected into the evaporation chamber through the third valve and the fourth valve, and the speed at which the vacuum pump group evacuates the evaporation chamber is controlled through the butterfly valve, so that the vacuum degree of the evaporation chamber is in the second vacuum range.

4. The metal evaporation method according to claim 1, characterized in that: The controlling the heating lamp in the evaporation chamber to light up comprises: Controlling a plurality of baking lamps located at the bottom of the evaporation chamber to light up.

5. The metal evaporation method according to claim 1, characterized in that: The step of adjusting the vacuum degree of the evaporation chamber to a third vacuum interval includes: When the temperature of the evaporation chamber is within the second temperature range, the nitrogen injection branch and the vacuum speed control branch are controlled to be closed, and the high vacuum branch is opened, and the vacuum pump group is controlled to evacuate the evaporation chamber so that the vacuum degree of the evaporation chamber is within the third vacuum range.

6. The metal evaporation method according to claim 1, characterized in that: The controlling the temperature in the evaporation chamber to be in a third temperature range includes: Turn off the baking lamp in the evaporation chamber, close the second valve in the high vacuum branch, and open the nitrogen injection branch and the vacuum speed control branch; Nitrogen is injected into the evaporation chamber through the nitrogen injection branch, and the vacuum degree of the evaporation chamber is maintained in the fourth vacuum range through the vacuum speed control branch, until the temperature in the evaporation chamber is in the third temperature range, the nitrogen injection branch and the vacuum speed control branch are closed, and the high vacuum branch is opened to evacuate the evaporation chamber until the vacuum degree of the evaporation chamber is in the third vacuum range.

7. The metal evaporation method according to claim 1, characterized in that: The first vacuum interval is when the vacuum degree in the evaporation chamber is 1E -3 Toor~1E -5 Toor range, the second vacuum range is that the vacuum degree in the evaporation chamber is in the range of 50 to 500 MToor.

8. The metal evaporation method according to claim 1, characterized in that: The third vacuum interval is when the vacuum degree in the evaporation chamber is less than 1E -3 Toor, the fourth vacuum interval is that the vacuum degree of the evaporation chamber is in the range of 300-700 MToor.

9. The metal evaporation method according to claim 1, characterized in that: The first temperature range is 200 to 400 degrees, and the second temperature range is 300 to 400 degrees.

10. A metal evaporation system, characterized in that: include: A control device and an evaporation device, wherein the control device is in communication connection with the evaporation device; The evaporation device comprises: an evaporation chamber, an evaporation table in the evaporation chamber, a baking lamp, a nitrogen injection branch, a high vacuum branch and a vacuum speed control branch; The control device is used to perform metal evaporation based on the method according to any one of claims 1 to 9.

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