Wafer coating device for optimizing ratio of step thickness and planar thickness of film layer

Abstract

The application discloses a wafer film coating device for optimizing the ratio of film layer step thickness and plane thickness, which comprises a working cavity, a carrier, a target material and a collimator. During the film coating process, the metal atoms sputtered from the target material can pass through the collimator and fall on the wafer received by the carrier. The collimator can block part of the metal atoms, so that the amount of the metal atoms deposited on the plane is reduced. The collimator comprises an upper mounting plate, a lower mounting plate and a metal bellows. The wall of the metal bellows is corrugated, can efficiently capture and fix the metal atoms, and can bear certain pressure and adaptively deform elastically. The distance between the upper mounting plate and the lower mounting plate is adjustable, so as to control the passing amount of the inclined atoms according to the process requirement, thereby reducing the plane thickness of the wafer surface film layer, improving the ratio of the film layer step thickness and the plane thickness, and optimizing the film coating effect of the wafer.

Description

TECHNICAL FIELD

[0001] The application relates to the technical field of wafer coating, and in particular to a wafer coating device for optimizing the ratio of film layer step thickness and plane thickness. BACKGROUND

[0002] Magnetron sputtering is a kind of physical vapor deposition (PVD), which is generally used for preparing metal, semiconductor, insulator and other materials, and has the advantages of simple equipment, easy control, large coating area and strong adhesion. Magnetron sputtering is a collision process of incident particles and targets. The incident particles undergo complex scattering and collision with target atoms in the target, and part of the momentum is transferred to the target atoms, and the target atoms collide with other target atoms to form a cascade process. In this cascade process, some target atoms near the surface obtain enough momentum to move outward, so as to leave the target and be sputtered. The sputtered target atoms fall on the wafer to realize the coating of the wafer.

[0003] In the magnetron sputtering process, when the wafer with micro-holes is coated, a collimator is generally installed between the target material and the wafer to improve the filling rate of the micro-holes. The large-angle metal atoms or metal ions sputtered will hit the collimator, and the vertical and small-angle metal atoms or metal ions can be sputtered to the wafer surface, thereby improving the overall step coverage.

[0004] However, the existing collimator is generally fixed, and in the debugging stage, different positions need to be repeatedly tested to find the optimal installation scheme, which is time-consuming and laborious, and not only affects the work efficiency, but also increases the work cost. SUMMARY

[0005] The application aims to overcome the deficiencies in the prior art and provide a wafer coating device for optimizing the ratio of film layer step thickness and plane thickness.

[0006] The application provides a wafer film coating device for optimizing film layer step thickness and plane thickness ratio, comprising: a working cavity for providing space for wafer film coating; a carrier provided in the working cavity and used for supporting the wafer; a target material provided in the working cavity and suspended above the carrier; and a collimator provided in the working cavity and located between the target material and the carrier; during the film coating process, metal atoms sputtered from the target material can pass through the collimator and fall on the wafer supported by the carrier; the collimator comprises: an upper mounting plate and a lower mounting plate, a plurality of perforations are provided on the upper mounting plate and the lower mounting plate, and the perforations on the upper mounting plate correspond to the perforations on the lower mounting plate (120) one by one; a plurality of groups of metal bellows are provided between the upper mounting plate and the lower mounting plate; any metal bellows is arranged in the vertical direction and communicates a pair of corresponding perforations on the upper mounting plate and the lower mounting plate; during the film coating process, the metal atoms enter the metal bellows, and part of the metal atoms in inclined motion are blocked by the metal bellows, so that the amount of metal atoms deposited on the plane is reduced; wherein the spacing between the upper mounting plate and the lower mounting plate is adjustable, the metal bellows can adapt to the spacing change of the upper mounting plate and the lower mounting plate through elastic deformation; by adjusting the spacing between the upper mounting plate and the lower mounting plate, the shielding range of the collimator to the metal atoms can be changed, so that the amount of metal atoms allowed to pass through the collimator is increased or reduced.

[0007] Further, the metal bellows is detachably arranged between the upper mounting plate and the lower mounting plate; and / or the surface of the metal bellows is subjected to sand blasting treatment to facilitate adhesion of the metal atoms.

[0008] Further, at least one of the upper mounting plate and the lower mounting plate is provided with an electromagnet, the electromagnet can attract the upper mounting plate and the lower mounting plate to be close to each other; by changing the current intensity or the number of electromagnets, the attraction force acting on the upper mounting plate or the lower mounting plate can be changed, so that the spacing between the upper mounting plate and the lower mounting plate is changed.

[0009] Further, the wafer film coating device for optimizing film layer step thickness and plane thickness ratio further comprises a first mounting seat for arranging the electromagnet; a cable slot is further provided in the first mounting seat, and the cable of the electromagnet can be bundled in the cable slot; the first mounting seat is detachably connected with the collimator, and / or the electromagnet is detachably connected with the first mounting seat.

[0010] Further, the wafer film coating device for optimizing film layer step thickness and plane thickness ratio further comprises a magnet, and the magnet is arranged around the metal bellows; the magnetic field formed by the magnet can constrain electrons, so as to prevent the electrons from flowing out by touching the wall.

[0011] Further, the wafer film coating device for optimizing film layer step thickness and plane thickness ratio further comprises a second mounting seat for arranging the magnet; the second mounting seat is detachably connected with the collimator, and / or the magnet is detachably connected with the second mounting seat.

[0012] Further, one of the upper mounting plate and the lower mounting plate is provided with a plurality of electromagnets, the plurality of electromagnets are distributed along the circumferential direction and surround the metal bellows; the other of the upper mounting plate and the lower mounting plate is provided with a plurality of magnets, the plurality of magnets are also distributed along the circumferential direction and surround the metal bellows; the magnets are oppositely arranged with the electromagnets; the electromagnets can attract the magnets after being electrified.

[0013] Further, the position of the collimator in the vertical direction is adjustable; by adjusting the position of the collimator in the vertical direction, the collimator is close to or away from the target material, the shielding range of the collimator to the metal atoms can be changed, thereby increasing or reducing the amount of metal atoms allowed to pass through the collimator.

[0014] Further, the wafer film coating device for optimizing the ratio of film layer step thickness and plane thickness further comprises a lifting driving assembly, the lifting driving assembly is used for driving the collimator to move along the vertical direction; the lifting driving assembly comprises: a rack, which is arranged on the collimator and extends along the vertical direction; a rotary driving member, a fixed end of the rotary driving member is arranged on the outer wall of the working cavity (1), and a movable end extends into the working cavity and is connected with the first gear; a second gear, which is rotatably arranged on the inner wall of the working cavity and simultaneously meshes with the rack and the first gear; when it is necessary to adjust the height of the collimator, the rotary driving member is started to make the first gear rotate, the first gear drives the second gear to rotate, and the second gear drives the rack and the collimator to move along the vertical direction.

[0015] Further, the wafer film coating device for optimizing the ratio of film layer step thickness and plane thickness further comprises a shutter, which is arranged between the collimator and the carrier; the shutter is arranged in a cylindrical shape, which allows the carrier to be exposed below the collimator and can shield the inner wall of the working cavity to prevent the inner wall of the working cavity from being contaminated.

[0016] The present application provides a wafer film coating device for optimizing the ratio of film layer step thickness and plane thickness, which comprises a working cavity, a carrier, a target material and a collimator. During the film coating process, the metal atoms sputtered from the target material can pass through the collimator and fall on the wafer received by the carrier. The collimator can block part of the metal atoms, so that the amount of metal atoms deposited on the plane is reduced. The collimator comprises an upper mounting plate, a lower mounting plate and a metal bellows. The wall of the metal bellows is corrugated, which can efficiently capture and fix the metal atoms and can also withstand a certain pressure and adaptively deform elastically. The distance between the upper mounting plate and the lower mounting plate is adjustable, so as to control the passing amount of inclined atoms according to the process requirements, thereby reducing the plane thickness of the film layer on the wafer surface, improving the ratio of the film layer step thickness and the plane thickness, and optimizing the film coating effect of the wafer. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 The present application provides a wafer film coating device for optimizing the ratio of film layer step thickness and plane thickness, which comprises a working cavity, a carrier, a target material and a collimator. During the film coating process, the metal atoms sputtered from the target material can pass through the collimator and fall on the wafer received by the carrier. The collimator can block part of the metal atoms, so that the amount of metal atoms deposited on the plane is reduced. The collimator comprises an upper mounting plate, a lower mounting plate and a metal bellows. The wall of the metal bellows is corrugated, which can efficiently capture and fix the metal atoms and can also withstand a certain pressure and adaptively deform elastically. The distance between the upper mounting plate and the lower mounting plate is adjustable, so as to control the passing amount of inclined atoms according to the process requirements, thereby reducing the plane thickness of the film layer on the wafer surface, improving the ratio of the film layer step thickness and the plane thickness, and optimizing the film coating effect of the wafer.

[0018] Figure 2 for Figure 1 A schematic diagram of the collimator in a wafer deposition apparatus that optimizes the ratio of film step thickness to plane thickness;

[0019] Figure 3 A schematic diagram illustrating the use of a collimator provided in this application;

[0020] Figure 4 for Figure 3 The diagram shows the usage scenario after the collimator height is reduced.

[0021] Figure 5 for Figure 3 The diagram shows the usage after the collimator height is increased.

[0022] Figure 6 A schematic diagram illustrating the use of another collimator provided in this application. Detailed Implementation

[0023] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0024] This application provides a wafer coating apparatus for optimizing the ratio of film step thickness to planar thickness, comprising: a working cavity 1 for providing space for wafer coating; a stage disposed in the working cavity 1 for receiving the wafer; a target 2 disposed in the working cavity 1 and suspended above the stage; and a collimator disposed in the working cavity 1 and located between the target 2 and the stage. During the coating process, metal atoms sputtered from the target 2 can pass through the collimator and fall onto the wafer received by the stage.

[0025] Specifically, the working cavity 1 is equipped with a wafer inlet and outlet, through which a robotic arm or other wafer handling mechanism can transfer wafers into the working cavity 1. The target material 2 is located at the top of the working cavity 1, and the stage is located directly below the target material 2. The stage can cooperate with the wafer handling mechanism to pick up the wafer to be coated and make the wafer face the target material 2.

[0026] Further, the working cavity 1 is further provided with an air inlet channel and an air outlet channel, the air inlet channel is communicated with the working cavity 1 and a gas supply device, the air outlet channel is communicated with the working cavity 1 and a gas extraction device, the gas supply device can pass the air inlet channel to pass the coating reaction gas into the working cavity 1, the gas extraction device can pass the air outlet channel to extract the gas in the working cavity 1; the gas supply device and the gas extraction device cooperate to maintain the cavity pressure required for the coating work.

[0027] Further, the target material 2 is connected with a radio frequency power supply, in the working process, the radio frequency power supply supplies power to the target material 2, the target material 2 can ionize the reaction gas after being powered on. The reaction gas is ionized, the plasma bombards the target material 2, and the metal atoms on the surface of the target material 2 are bombarded out, the metal atoms move towards the carrier and finally deposit on the surface of the wafer to realize the coating of the wafer.

[0028] Since the bombardment angle of the plasma is irregular and non-directional, when the plasma bombards the target material 2, the metal atoms bombarded out of the surface of the target material 2 also move irregularly and non-directionally under the action of force. In this case, part of the metal atoms will fall vertically, and the other part of the metal atoms will move downward at various angles.

[0029] When the coating has micropores, the metal atoms falling vertically and the falling angle close to 90° are more likely to deposit into the micropores, and the metal atoms falling obliquely are more likely to deposit on the plane.

[0030] A collimator is arranged between the target material 2 and the carrier, and the collimator can block part of the oblique metal atoms. In this way, under the same coating conditions, the collimator can reduce the amount of metal atoms falling on the plane, thereby reducing the plane thickness of the film layer and increasing the ratio of the film layer step thickness to the plane thickness.

[0031] Further, the collimator comprises: an upper mounting plate 110 and a lower mounting plate 120, a plurality of through holes 111 are arranged on the upper mounting plate 110 and the lower mounting plate 120, and the through holes 111 on the upper mounting plate 110 correspond to the through holes 111 on the lower mounting plate 120 one by one; a plurality of groups of metal bellows 130 are arranged between the upper mounting plate 110 and the lower mounting plate 120; any metal bellows 130 extends in the vertical direction and is communicated with a corresponding pair of through holes 111 on the upper mounting plate 110 and the lower mounting plate 120; in the coating process, the metal atoms enter the metal bellows 130, and part of the obliquely moving metal atoms are blocked by the metal bellows 130, so that the amount of metal atoms deposited on the plane is reduced.

[0032] For details, please refer to Figure 1 and Figure 2In the illustrated embodiment, the upper mounting plate 110 and the lower mounting plate 120 are both provided in the shape of a circular plate, arranged side by side in the vertical direction, and each has a plurality of perforations 111 arranged in an array on the plate surface. The metal bellows 130 are arranged between the upper mounting plate 110 and the lower mounting plate 120. The upper end of any one of the metal bellows 130 is connected to a perforation 111 in the upper mounting plate 110, and the lower end is connected to a perforation 111 in the lower mounting plate 120; the pipe of the metal bellows 130 and the perforations 111 form a vertically extending channel.

[0033] The metal bellows 130 are made of a thin-walled metal pipe, and the pipe wall is corrugated through a specific processing technique. The corrugated structure makes the metal bellows 130 have good elasticity and flexibility, and can withstand a certain pressure and elastically deform adaptively.

[0034] Continuing to refer to Figure 2 The metal bellows 130 and the perforations 111 form a vertical channel that facilitates the movement of particles. Because the pipe wall of the metal bellows 130 is provided in a corrugated reciprocating folded structure, the inner wall of the vertical channel has multiple layers of folds. During the coating process, after the metal atoms enter the vertical channel, the metal atoms that move at a large angle will hit the wall of the channel and be accommodated by the folds. The fold structure can effectively fix these metal atoms to prevent them from falling off after hitting the wall and ultimately affecting the coating. In addition, the corrugated reciprocating folded structure of the metal bellows 130 can increase the inner wall area of the channel to accommodate a larger amount of metal atoms and increase the single-use duration of the collimator.

[0035] Further, the spacing between the upper mounting plate 110 and the lower mounting plate 120 is adjustable, and the metal bellows 130 can adapt to changes in the spacing between the upper mounting plate 110 and the lower mounting plate 120 through elastic deformation; by adjusting the spacing between the upper mounting plate 110 and the lower mounting plate 120, the shielding range of the collimator for metal atoms can be changed, thereby increasing or decreasing the amount of metal atoms allowed to pass through the collimator.

[0036] In one embodiment, at least one of the upper mounting plate 110 and the lower mounting plate 120 is connected to a driver (such as a pneumatic cylinder, an electric cylinder, etc.) and can move in the vertical direction under the drive of the driver, thereby changing the spacing between the upper mounting plate 110 and the lower mounting plate 120.

[0037] In another embodiment, at least one of the upper mounting plate 110 and the lower mounting plate 120 is threadedly connected to a screw rod, and rotating the screw rod can make the upper mounting plate 110 or the lower mounting plate 120 move linearly along the screw rod; making the screw rod extend vertically can change the spacing between the upper mounting plate 110 and the lower mounting plate 120 by rotating the screw rod in the forward or reverse direction.

[0038] In other embodiments, a micrometer or a jackscrew can be used to adjust the relative positions of the upper mounting plate 110 and the lower mounting plate 120, thereby changing the height of the collimator.

[0039] Since the metal bellows 130 is a flexible structure, when the upper mounting plate 110 and the lower mounting plate 120 are moved closer to each other, the metal bellows 130 can be deformed by compression to adapt to the change in the height of the collimator; when the upper mounting plate 110 and the lower mounting plate 120 are moved away from each other, the metal bellows 130 can be deformed by stretching to adapt to the change in the height of the collimator.

[0040] For details, please refer to Figure 3 In the illustrated embodiment, when the target 2 sputters metal atoms toward the vertical pipe directly below the single point, metal atoms with an angle of movement less than a will be blocked by the pipe wall, and only metal atoms with an angle of movement between a and 90° can pass through the collimator and fall onto the wafer.

[0041] For details, please refer to Figure 4 In the illustrated embodiment, the distance between the upper mounting plate 110 and the lower mounting plate 120 is reduced, and the metal bellows 130 is compressed; at this time, when the target 2 sputters metal atoms toward the vertical pipe directly below the single point, metal atoms with an angle of movement less than β will be blocked by the pipe wall, and only metal atoms with an angle of movement between β and 90° can pass through the collimator and fall onto the wafer. a > β, at this time, the amount of metal atoms blocked by the collimator is reduced.

[0042] For details, please refer to Figure 5 In the illustrated embodiment, the distance between the upper mounting plate 110 and the lower mounting plate 120 is increased, and the metal bellows 130 is stretched; at this time, when the target 2 sputters metal atoms toward the vertical pipe directly below the single point, metal atoms with an angle of movement less than γ will be blocked by the pipe wall, and only metal atoms with an angle of movement between γ and 90° can pass through the collimator and fall onto the wafer. a < γ, at this time, the amount of metal atoms blocked by the collimator is increased.

[0043] As can be seen from the foregoing, when the wafer to be coated has micropores, metal atoms with a falling angle close to 90° are more likely to be deposited in the micropores, while metal atoms falling obliquely are more likely to be deposited on the flat surface. When confirming the coating effect of the wafer, the ratio of the step thickness of the film layer to the flat surface thickness is an important reference condition.

[0044] For example, the process requires that the ratio of the film layer step thickness and the planar thickness is 1:2-2.5 after plating. Under the same plating condition, most metal atoms are deposited on the planar surface of the wafer without the use of the collimator, resulting in a ratio of the film layer step thickness and the planar thickness of 1:4. After adding the collimator, part of the inclined falling metal atoms that would be deposited on the planar surface are blocked, while the amount of metal atoms falling into the micropores remains unchanged, resulting in a change in the ratio of the film layer step thickness and the planar thickness to 1:3. At this time, the distance between the upper mounting plate 110 and the lower mounting plate 120 needs to be adjusted to make the collimator block more inclined atoms, so as to finally achieve a ratio of the film layer step thickness and the planar thickness of 1:2. Similarly, if the ratio of the surface film thickness and the hole filling thickness is 1:1.5 after adding the collimator, the distance between the upper mounting plate 110 and the lower mounting plate 120 needs to be adjusted to reduce the amount of metal atoms blocked by the collimator, so that more inclined atoms fall on the planar surface, thereby improving the ratio of the film layer step thickness and the planar thickness.

[0045] In summary, the wafer plating device provided by the present application can control the amount of inclined falling metal atoms by adding a collimator, thereby reducing the planar thickness of the wafer surface film layer and improving the ratio of the film layer step thickness and the planar thickness. By using a metal bellows 130 as a vertical pipeline of the collimator, the ability to capture and fix inclined atoms can be enhanced, and the height adjustment operation of the collimator can be quickly adapted and simplified when the height of the collimator changes. The height of the collimator can be adjusted to effectively control the amount of inclined atoms passing through according to the process requirements, thereby optimizing the wafer plating effect.

[0046] Optionally, the metal bellows 130 is detachably arranged between the upper mounting plate 110 and the lower mounting plate 120.

[0047] For example, the upper mounting plate 110 and the lower mounting plate 120 are each provided with a slot, and the metal bellows 130 is provided with a skirt at both ends. The skirt is inserted into the slot to achieve installation of the metal bellows 130, and the skirt is withdrawn from the slot to achieve disassembly of the metal bellows 130.

[0048] For another example, the upper mounting plate 110 and the lower mounting plate 120 are each provided with a magnet, and the magnet can attract the metal bellows 130 to achieve installation of the metal bellows 130. Overcoming the magnetic force of the magnet can achieve disassembly of the metal bellows 130.

[0049] For yet another example, the metal bellows 130 is connected to the upper mounting plate 110 and the lower mounting plate 120 by screwing.

[0050] The present application does not limit the specific installation form of the metal bellows 130.

[0051] The metal bellows 130 is detachable relative to the upper mounting plate 110 and the lower mounting plate 120, and can be detached after use for a period of time to allow cleaning, replacement, and other treatments, thereby avoiding the pipe wall of the metal bellows 130 from being covered with too many metal atoms and losing the ability to capture newly generated metal atoms after long-term use.

[0052] Optionally, the surface of the metal bellows 130 is sandblasted to facilitate the adhesion of metal atoms.

[0053] At least the inner pipe wall of the metal bellows 130 is treated by sandblasting. After sandblasting, the roughness of the pipe wall of the metal bellows 130 is increased, so that the metal bellows 130 can more firmly adhere to metal atoms. The rough pipe wall also provides more attachment points and a larger contact area for metal atoms, which can effectively enhance the adhesion between the metal atoms and the surface of the bellows. In this way, it can prevent the captured metal atoms from falling off, affecting the film coating environment and the final wafer film coating effect.

[0054] Sandblasting treatment enhances the stability and reliability of the metal bellows 130 during use.

[0055] In an embodiment, at least one of the upper mounting plate 110 and the lower mounting plate 120 is provided with an electromagnet 3, which can attract the upper mounting plate 110 and the lower mounting plate 120 to move closer to each other. By changing the current intensity or the number of electromagnets 3, the attraction force on the upper mounting plate 110 or the lower mounting plate 120 can be changed, thereby changing the distance between the upper mounting plate 110 and the lower mounting plate 120.

[0056] For details, please refer to Figure 2 In the illustrated embodiment, the top surface of the lower mounting plate 120 facing the upper mounting plate 110 is provided with a plurality of electromagnets 3, which are spaced apart along the circumferential direction and surround the metal bellows 130. The upper mounting plate 110 is made of a ferromagnetic metal material. The metal bellows 130 is made of aluminum. When it is necessary to adjust the distance between the upper mounting plate 110 and the lower mounting plate 120, the electromagnets 3 are energized to attract the upper mounting plate 110, causing the upper mounting plate 110 to move towards the lower mounting plate 120, thereby reducing the distance between the upper mounting plate 110 and the lower mounting plate 120. At this time, the metal bellows 130 is compressed, and the elasticity of the metal bellows 130 and the magnetic attraction force are in opposition, finally making the upper mounting plate 110 stable.

[0057] When necessary, increasing the current of the electromagnets 3 can increase the magnetism of the electromagnets 3, thereby further reducing the distance between the upper mounting plate 110 and the lower mounting plate 120. Similarly, reducing the current of the electromagnets 3 can weaken the magnetism of the electromagnets 3, thereby increasing the distance between the upper mounting plate 110 and the lower mounting plate 120.

[0058] Alternatively, a certain number of electromagnets 3 are selected to be energized according to needs; when the number of energized electromagnets 3 increases, the attraction force on the upper mounting plate 110 increases, and the distance between the upper mounting plate 110 and the lower mounting plate 120 decreases; when the number of energized electromagnets 3 decreases, the attraction force on the upper mounting plate 110 decreases, and the distance between the upper mounting plate 110 and the lower mounting plate 120 increases.

[0059] The use of electromagnets 3 makes the height adjustment of the collimator more convenient.

[0060] In other embodiments, electromagnets 3 can be arranged on the upper mounting plate 110 to move the lower mounting plate 120 by attraction; or electromagnets 3 can be arranged on the upper mounting plate 110 and the lower mounting plate 120 respectively, and the upper mounting plate 110 and the lower mounting plate 120 are moved relative to each other by mutual attraction of the electromagnets 3.

[0061] The present application does not limit the specific configuration and mounting method of the electromagnets 3.

[0062] Optionally, a guide is arranged between the upper mounting plate 110 and the lower mounting plate 120, the guide extends in the vertical direction and is used to limit the movement direction of the upper mounting plate 110 and the lower mounting plate 120 when they move closer to or away from each other.

[0063] The guide can be a guide rod, a slide rail or any structure that can guide movement. At least one of the upper mounting plate 110 and the lower mounting plate 120 is slidingly arranged on the guide and is limited in movement by the guide.

[0064] When adjusting the distance between the upper mounting plate 110 and the lower mounting plate 120, the upper mounting plate 110 and the lower mounting plate 120 can only move in the vertical direction under the limitation of the guide, thereby ensuring the smoothness of the vertical pipeline.

[0065] Optionally, the wafer film coating device for optimizing the ratio of step thickness and planar thickness of the film layer further comprises a first mounting seat 210, and the first mounting seat 210 is used to arrange the electromagnets 3; the first mounting seat 210 is further provided with a cable slot, and the cable of the electromagnet 3 can be bundled in the cable slot.

[0066] The first mounting seat 210 is arranged to facilitate fixing the electromagnets 3 on the collimator.

[0067] Figure 1 And Figure 2 In the embodiment shown, the first mounting seat 210 is arranged in the shape of an inverted groove with an open bottom surface, the electromagnets 3 can be hidden in the inverted groove, and the first mounting seat 210 can also protect the electromagnets 3; the first mounting seat 210 is in the shape of a whole ring, is arranged on the lower mounting plate 120 and surrounds the metal bellows 130.

[0068] When the plurality of electromagnets 3 are arranged through the first mounting base 210, a plurality of clamping grooves can be arranged in the first mounting base 210, and any clamping groove can be used to accommodate one electromagnet 3. The electromagnets 3 are defined by the independent clamping grooves, which not only facilitates the installation of the electromagnets 3, but also avoids mutual interference of the electromagnets 3 and displacement of the electromagnets 3 when the upper mounting plate 110 and the lower mounting plate 120 relatively move.

[0069] Further, one side of the first mounting base 210 is provided with a wire bundling groove. When the plurality of electromagnets 3 are arranged through the first mounting base 210, a plurality of groups of cables can be converged through the wire bundling groove and finally led out from one outlet, so as to facilitate external power supply. The wire bundling groove not only regularizes a large number of cables, but also facilitates the control of the position of the led-out wires and is conducive to use safety.

[0070] In order to avoid the interference of the first mounting base 210 on the external magnetism of the electromagnets 3, the first mounting base 210 can be made of a material (such as plastic, glass, etc.) with high magnetic permeability and low magnetic resistance.

[0071] Optionally, the first mounting base 210 is detachably connected with the collimator.

[0072] The first mounting base 210 can be detachably arranged on the upper mounting plate 110 or the lower mounting plate 120 through screwing, insertion, buckling and the like. The specific arrangement mode of the first mounting base 210 is not limited in the application.

[0073] The first mounting base 210 is detachable relative to the collimator, and when the collimator needs to be cleaned, the first mounting base 210 can be removed, so as to facilitate the arrangement or replacement of parts. If the electromagnets 3 fail, the first mounting base 210 can also be removed, and the electromagnets 3 therein can be repaired or processed.

[0074] Optionally, the electromagnets 3 are detachably connected with the first mounting base 210.

[0075] The electromagnets 3 can be detachably arranged in the first mounting base 210 through clamping, insertion, tight fitting and the like.

[0076] The electromagnets 3 are detachable relative to the first mounting base 210, which facilitates the installation and repair and maintenance of the electromagnets 3, and if necessary, the number of the electromagnets 3 in the first mounting base 210 can be increased or decreased, so as to adjust the magnetic field strength.

[0077] Optionally, the wafer film coating device for optimizing the ratio of the step thickness of the film layer to the planar thickness further comprises a magnet 4, and the magnet 4 is arranged around the metal bellow 130; the magnetic field formed by the magnet 4 can constrain electrons, thereby preventing the loss of the electrons.

[0078] The magnet 4 can be arranged in a circular ring shape, or a plurality of magnets 4 can be arranged along the circumferential direction to surround all the metal bellows 130, so as to ensure that the magnetic field acts on each metal bellows 130 comprehensively.

[0079] It is easy to understand that in the coating process, the reaction gas is ionized to generate electrons, and the target 2 needs to be bombarded by electrons, and the electrons also need to continue to collide with gas particles to generate new electrons and ions, so it is necessary to reduce the loss of electrons in the working cavity 1.

[0080] In the wafer coating device provided in the present application, a large number of particles, including electrons, will enter the vertical pipeline of the collimator. In order to prevent the loss of electrons due to irregular movement, a ring of magnets 4 is arranged outside the metal bellows 130. The magnets 4 generate a magnetic field. When the electrons move in the magnetic field, they will be subjected to a Lorentz force perpendicular to the direction of motion and the direction of the magnetic field. This force will change the trajectory of the electrons, thereby restricting the free movement of the electrons to a certain extent. The action of the magnetic field on the electrons limits the movement of the electrons. When the electrons approach the pipeline wall, the magnetic field will change the direction of the electron movement, making it difficult for the electrons to lose contact with the wall.

[0081] Optionally, the wafer coating device for optimizing the ratio of the step thickness and the planar thickness of the film layer provided in the present application further comprises a second mounting seat 220, and the second mounting seat 220 is used for arranging the magnets 4.

[0082] The second mounting seat 220 is arranged to facilitate the fixation of the magnets 4 on the collimator.

[0083] Figure 1 And Figure 2 In the embodiment shown, the second mounting seat 220 is arranged as a receiving groove with an open top surface, and the magnets 4 can be hidden in the receiving groove. The second mounting seat 220 can also protect the magnets 4. The second mounting seat 220 is in the form of a circular ring, and is arranged on the bottom surface of the upper mounting plate 110 facing the lower mounting plate 120 and surrounds the metal bellows 130. At this time, the magnets 4 are close to the target 2, which is conducive to maintaining the plasma environment below the target 2 and promoting the sputtering of metal atoms.

[0084] When a plurality of magnets 4 are arranged through the second mounting seat 220, a plurality of clamping grooves can also be arranged in the second mounting seat 220. Any clamping groove can be used to accommodate one magnet 4. The independent clamping grooves can limit the magnets 4, which facilitates the installation of the magnets 4, avoids interference between the magnets 4, and also avoids displacement of the magnets 4 when the upper mounting plate 110 and the lower mounting plate 120 move relative to each other.

[0085] In order to avoid interference of the second mounting seat 220 with the magnetic field, the second mounting seat 220 can be made of a material with high magnetic permeability and low magnetic resistance (such as plastic, glass, etc.).

[0086] Optionally, the second mounting base 220 is detachably connected with the collimator.

[0087] The second mounting base 220 can be detachably arranged on the upper mounting plate 110 or the lower mounting plate 120 by screwing, inserting, buckling or the like. The application does not limit the specific arrangement mode of the second mounting base 220.

[0088] The second mounting base 220 is detachable relative to the collimator. When the collimator needs to be cleaned, the second mounting base 220 can be removed to facilitate the arrangement or replacement of parts. If the magnet 4 fails, the second mounting base 220 can also be removed to repair or process the magnet 4 therein.

[0089] Optionally, the magnet 4 is detachably connected with the second mounting base 220.

[0090] The magnet 4 can be detachably arranged in the second mounting base 220 by clamping, inserting, tight fitting or the like.

[0091] The magnet 4 is detachable relative to the second mounting base 220, which is more convenient for the installation and maintenance of the magnet 4. If necessary, the number of magnets 4 in the second mounting base 220 can also be increased or decreased to adjust the magnetic field strength.

[0092] Optionally, one of the upper mounting plate 110 and the lower mounting plate 120 is provided with a plurality of electromagnets 3, and the plurality of electromagnets 3 are distributed along the circumferential direction and surround the metal bellows 130. The other of the upper mounting plate 110 and the lower mounting plate 120 is provided with a plurality of magnets 4, and the plurality of magnets 4 are also distributed along the circumferential direction and surround the metal bellows 130. The magnet 4 is arranged opposite to the electromagnet 3. The electromagnet 3 can attract the magnet 4 after being powered.

[0093] For details, please refer to Figure 2 In the illustrated embodiment, the bottom surface of the upper mounting plate 110 facing the lower mounting plate 120 is provided with a ring of magnets 4, which are hidden in the second mounting base 220. The top surface of the lower mounting plate 120 facing the upper mounting plate 110 is provided with a ring of electromagnets 3, which are hidden in the first mounting base 210. The magnet 4 can generate a magnetic field, constrain electrons and prevent the loss of electrons. When the distance between the upper mounting plate 110 and the lower mounting plate 120 needs to be changed, the electromagnet 3 is powered, and the electromagnet 3 can attract the magnet 4, so that the upper mounting plate 110 and the lower mounting plate 120 are close to each other to change the shielding range of the collimator to the metal atoms, thereby increasing or decreasing the amount of metal atoms allowed to pass through the collimator. During the debugging stage, the optimal distance between the upper mounting plate 110 and the lower mounting plate 120 can also be found by changing the input current of the electromagnet 3 or changing the number of powered electromagnets 3.

[0094] Optionally, the collimator is adjustable in the vertical direction; by adjusting the position of the collimator in the vertical direction, the collimator is made to approach or move away from the target 2, the shielding range of the collimator to the metal atoms is changed, and the amount of metal atoms allowed to pass through the collimator is increased or decreased.

[0095] Specifically, reference can be made to Figure 6 In the illustrated embodiments (1) and (2), the vertical pipes of the collimator have the same height.

[0096] In the embodiment (1), the distance between the collimator and the target 2 is a; in the embodiment (2), the distance between the collimator and the target 2 is b; a < b.

[0097] In the embodiment (1), when the target 2 sputters metal atoms in the vertical pipe directly below the single point, the metal atoms with a motion angle less than δ are blocked by the pipe wall, and only the metal atoms with a motion angle between δ and 90° can pass through the collimator and fall on the wafer.

[0098] In the embodiment (2), when the target 2 sputters metal atoms in the vertical pipe directly below the single point, the metal atoms with a motion angle less than ε are blocked by the pipe wall, and only the metal atoms with a motion angle between ε and 90° can pass through the collimator and fall on the wafer.

[0099] Here, δ < ε. Therefore, the farther the collimator is from the target 2, or the lower the position of the collimator in the vertical direction, the more metal atoms are shielded. When the ratio of the step thickness to the planar thickness is too small, the collimator can be lowered so that the collimator is farther away from the target 2, more inclined atoms are blocked, and the metal atoms that can be deposited on the wafer surface are reduced; when the ratio of the surface coverage to the step coverage is too large, the collimator can be raised so that the collimator is closer to the target 2, more inclined atoms are allowed to pass through the collimator, and the metal atoms that can be deposited on the wafer surface are increased.

[0100] In an embodiment, a driver (such as a pneumatic cylinder, an electric cylinder, etc.) is connected to the collimator, and the collimator can move along the vertical direction under the drive of the driver to approach or move away from the target 2.

[0101] In another embodiment, a screw rod, a micrometer, or a lead screw adjusting structure is connected to the collimator, and the worker can move the collimator along the vertical direction by operating the adjusting structure to make the collimator approach or move away from the target 2.

[0102] The present application does not limit the specific way of implementing the lifting of the collimator.

[0103] Figure 1 and Figure 2In the shown embodiment, the collimator in the wafer coating device can not only move up and down, but also the distance between the upper mounting plate 110 and the lower mounting plate 120 can be adjusted. The double adjustment structure can increase the adjustment range of the collimator and further improve the applicability of the collimator.

[0104] In an embodiment, the wafer coating device for optimizing the ratio of the step thickness and the planar thickness of the film layer further comprises a lifting driving assembly for driving the collimator to move in the vertical direction; the lifting driving assembly comprises: a rack 310 arranged on the collimator and extending in the vertical direction; a rotary driving member 320, the fixed end of the rotary driving member 320 is arranged on the outer wall of the working cavity 1, and the movable end extends into the working cavity 1 and is connected with the first gear 330; a second gear 340 is rotatably arranged on the inner wall of the working cavity 1 and simultaneously meshes with the rack 310 and the first gear 330; when the height of the collimator needs to be adjusted, the rotary driving member 320 is started to make the first gear 330 rotate, the first gear 330 drives the second gear 340 to rotate, and the second gear 340 drives the rack 310 and the collimator to move in the vertical direction.

[0105] For details, please refer to Figure 1 In the shown embodiment, the wafer coating device comprises two sets of lifting driving assemblies, which are symmetrically arranged along the left-right direction to support and adjust the height of the collimator. The rotary driving member 320 is a motor, the cylinder of the motor is fixedly arranged on the outer wall of the working cavity 1, the rotary shaft is connected through a bellows seal and extends into the working cavity 1 and is connected with the first gear 330; the first gear 330 is a bevel gear. On one side of the first gear 330, the second gear 340 is rotatably arranged on the inner wall of the working cavity 1 through a rotary mounting seat, and the second gear 340 meshes with the first gear 330. The side surface of the collimator is provided with a rack 310, which extends in the vertical direction and meshes with the other side of the second gear 340. During work, the two sets of lifting driving assemblies are started synchronously, the motor drives the first gear 330 to rotate and drives the second gear 340 to rotate, and through the gear and rack cooperation, the second gear 340 drives the rack 310 to move vertically. The gear and rack cooperation on both sides can also limit the movement direction of the collimator, improve the accuracy and stability of the collimator lifting.

[0106] Optionally, the wafer coating device for optimizing the ratio of the step thickness and the planar thickness of the film layer further comprises a shutter 5 arranged between the collimator and the carrier, the shutter 5 is arranged in a cylindrical shape, which allows the carrier to be exposed below the collimator and can also shield the inner wall of the working cavity 1 to prevent the inner wall of the working cavity 1 from being contaminated.

[0107] For details, please refer to Figure 1 and Figure 2In the illustrated embodiment, the bottom surface of the lower mounting plate 120 away from the upper mounting plate 110 is provided with a ring of a baffle 5, the baffle 5 has a certain height, and the rack 310 is mounted on the outer wall surface of the baffle 5. The table portion for supporting the wafer is provided in a circular table shape. During coating, the baffle 5 is close to the table portion of the table, the baffle 5 can be wrapped above the table portion, the baffle 5 will not hinder the deposition of metal atoms to the wafer, and can separate the inner wall of the working cavity 1 to avoid the metal atoms and the pollutants generated by the coating from splashing onto the inner wall of the working cavity 1. After working for a period of time, the baffle 5 can also be cleaned to ensure the cleanliness of the cavity environment.

[0108] The above embodiments only express several implementation manners of the present application, and the description is relatively specific and detailed, but it should not be understood as a limitation on the patent scope of the application. It should be noted that for ordinary skilled persons in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which are all within the protection scope of the present application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims.

Claims

1. A wafer film coating device for optimizing the ratio of step thickness and planar thickness of a film layer, characterized in that, The utility model relates to a kind of sputtering device, including: Working cavity (1) for providing space for wafer coating; Stage, be located in the working cavity (1), for receiving wafer; Target material (2), be located in the working cavity (1), and hang above the stage; Collimator, be located in the working cavity (1), and be located between the target material (2) and the stage; During coating process, metal atom sputtered by the target material (2) can pass through the collimator, fall on the wafer received by the stage; The collimator includes: Upper mounting plate (110) and lower mounting plate (120), a plurality of perforations (111) are provided on the upper mounting plate (110) and the lower mounting plate (120), and the perforations (111) on the upper mounting plate (110) correspond to the perforations (111) on the lower mounting plate (120) one by one; Multiple sets of metal bellows (130) are provided between the upper mounting plate (110) and the lower mounting plate (120); Any metal bellows (130) is arranged along the vertical direction and communicates a pair of corresponding perforations (111) on the upper mounting plate (110) and the lower mounting plate (120); During coating process, metal atoms enter the metal bellows (130), and part of the metal atoms in inclined motion is blocked by the metal bellows (130), so that the amount of metal atoms deposited on the plane is reduced; Wherein, the spacing of the upper mounting plate (110) and the lower mounting plate (120) is adjustable, and the metal bellows (130) can adapt to the spacing change of the upper mounting plate (110) and the lower mounting plate (120) through elastic deformation; By adjusting the spacing of the upper mounting plate (110) and the lower mounting plate (120), the shielding range of the collimator to metal atoms can be changed, so as to increase or reduce the amount of metal atoms allowed to pass through the collimator.

2. The wafer coating device for optimizing the ratio of step thickness and planar thickness of a film layer according to claim 1, wherein The metal bellows (130) are detachably arranged between the upper mounting plate (110) and the lower mounting plate (120); And / or, the surface of the metal bellows (130) is sandblasted to facilitate the adhesion of metal atoms.

3. The wafer coating device for optimizing the ratio of step thickness and planar thickness of a film layer according to claim 1, wherein At least one of the upper mounting plate (110) and the lower mounting plate (120) is provided with an electromagnet (3), and the electromagnet (3) can attract the upper mounting plate (110) and the lower mounting plate (120) to each other; By changing the current intensity or changing the number of electromagnets (3), the attraction force on the upper mounting plate (110) or the lower mounting plate (120) can be changed, so as to change the spacing of the upper mounting plate (110) and the lower mounting plate (120).

4. The wafer coating device for optimizing the ratio of step thickness and planar thickness of a film layer according to claim 3, wherein Further comprising a first mounting seat (210), the first mounting seat (210) is used for arranging the electromagnet (3); The first mounting seat (210) is further provided with a cable slot, and the cable of the electromagnet (3) can be bundled in the cable slot; The first mounting seat (210) is detachably connected with the collimator, and / or the electromagnet (3) is detachably connected with the first mounting seat (210).

5. The wafer coating apparatus for optimizing the ratio of step thickness and planar thickness of a film layer according to claim 1, wherein Further comprising a magnet (4) arranged around the metal bellows (130); The magnetic field formed by the magnet (4) can confine the electrons, thereby preventing the electrons from flowing out.

6. The wafer coating device for optimizing the ratio of step thickness and planar thickness of a film layer according to claim 5, wherein Further comprising a second mounting base (220) for arranging the magnet (4); The second mounting base (220) is detachably connected with the collimator, and / or the magnet (4) is detachably connected with the second mounting base (220).

7. The wafer coating apparatus for optimizing the ratio of step thickness and planar thickness of a film layer according to claim 1, wherein One of the upper mounting plate (110) and the lower mounting plate (120) is provided with a plurality of electromagnets (3), and the plurality of electromagnets (3) are distributed along the circumferential direction and surround the metal bellows (130); The other one of the upper mounting plate (110) and the lower mounting plate (120) is provided with a plurality of magnets (4), and the plurality of magnets (4) are also distributed along the circumferential direction and surround the metal bellows (130); The magnet (4) is arranged opposite to the electromagnet (3); The electromagnet (3) can attract the magnet (4) after being powered.

8. The wafer coating apparatus for optimizing the step thickness and planar thickness ratio of a film layer as claimed in claim 1, wherein The position of the collimator in the vertical direction is adjustable; By adjusting the position of the collimator in the vertical direction, the collimator can be moved closer to or farther away from the target material (2), so as to change the shielding range of the collimator to the metal atoms, thereby increasing or reducing the amount of metal atoms allowed to pass through the collimator.

9. The wafer coating device for optimizing the ratio of step thickness and planar thickness of a film layer according to claim 8, wherein, Further comprising a lifting driving assembly for driving the collimator to move in the vertical direction; The lifting driving assembly comprises: A rack (310) arranged on the collimator and extending in the vertical direction; A rotating driving member (320) having a fixed end arranged on the outer wall of the working cavity (1) and a movable end extending into the working cavity (1) and connected with a first gear (330); A second gear (340) rotatably arranged on the inner wall of the working cavity (1) and simultaneously meshing with the rack (310) and the first gear (330); When the height of the collimator needs to be adjusted, the rotating driving member (320) is started to rotate the first gear (330), the first gear (330) drives the second gear (340) to rotate, and the second gear (340) drives the rack (310) and the collimator to move in the vertical direction.

10. The wafer coating device for optimizing the ratio of step thickness and planar thickness of a film layer according to any one of claims 1-9, wherein, Further comprising a shutter (5) arranged between the collimator and the carrier; The shutter (5) is arranged in a cylindrical shape, which allows the carrier to be exposed below the collimator and can shield the inner wall of the working cavity (1) to prevent the inner wall of the working cavity (1) from being contaminated.

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