Method for preparing nanoimprint template and method for repeatedly utilizing quartz photoetching plate of nanoimprint template

Abstract

The invention discloses a method for preparing a nanoimprint template and a method for repeatedly utilizing a quartz photoetching plate of the nanoimprint template. A method for preparing a nanoimprint template may include: patterning a nanoimprint pattern on a first wafer; cutting the first wafer to form a first wafer with a plurality of first bare chips; transferring the nanoimprint pattern onto a second wafer using a plurality of first dies; dicing the second wafer to form a second wafer having a plurality of second dies; and bonding the second wafer with the plurality of second bare chips with the quartz photoetching plate.

Description

Technical Field

[0001] The present application relates generally to the field of semiconductor manufacturing, and in particular to nanoimprinting. Background Art

[0002] Nanoimprint technology is often used in semiconductor manufacturing. Nanoimprint technology has the ability to prepare small-size (nanoscale) patterns and is a technology that has the potential to replace photolithography. When nanoimprint is applied to the semiconductor field, its imprint template needs to be hard and transparent.

[0003] Figure 1 The preparation process of a conventional hard transparent nanoimprint template is shown. As shown in (a), a quartz photomask 110 with a Cr layer 130 is used as a substrate. As shown in (b), an electron beam is used to expose a pattern, the Cr layer 130 is etched, and the electron beam exposure glue is removed to obtain a patterned Cr layer 132. As shown in (c), the patterned Cr layer 132 is used as a hard mask to etch the quartz photomask 110, and finally the patterned Cr layer 132 is removed to obtain a patterned quartz photomask 112 as a nanoimprint template.

[0004] In some cases, a nanoimprint master template can also be used to prepare a nanoimprint daughter template. Figure 2 FIG. 2 shows a conventional process for preparing a hard transparent nanoimprint template. As shown in (a), a quartz photolithography plate 210 without Cr is provided as a substrate, and a nanoimprint master template 230 is provided. As an example, the nanoimprint master template 230 can be prepared by Figure 1 For example, it can be prepared by Figure 1 The nanoimprint template 112 is prepared by the process shown in . As shown at (b), the pattern of the nanoimprint master template 230 is transferred to the nanoimprint glue 250 coated on the surface of the quartz lithography plate 210 by nanoimprint technology. As shown at (c), the nanoimprint master template 230 is separated from the quartz lithography plate 210 to leave the patterned nanoimprint glue 250 on the surface of the wafer 310. As shown at (d), the nanoimprint pattern is transferred from the nanoimprint glue 250 to the quartz lithography plate 210 by etching to obtain a patterned quartz lithography plate 212, which can be used as a nanoimprint sub-template.

[0005] The above basis Figure 1 The nanoimprint (master) template 112 prepared by the process of Figure 2 The nanoimprint sub-template 212 prepared by the process can be used as a nanoimprint template in a subsequent nanoimprint process.

[0006] Whether it is a nanoimprint master template or a nanoimprint daughter template, this traditional hard transparent nanoimprint template is based on an expensive photolithography plate. However, the nanoimprint template is a consumable material. Once its surface is irreversibly damaged, it can no longer be used in the nanoimprint process. The use of this nanoimprint template is bound to lead to a significant increase in the cost of nanoimprint technology, thereby affecting the competitiveness of nanoimprint technology in the semiconductor field.

[0007] A low-cost nanoimprint template preparation technology is needed in the art. Summary of the invention

[0008] The present invention is provided to provide a low-cost nanoimprint template.

[0009] According to one aspect of the present invention, a method for preparing a nanoimprint template is provided, which includes: patterning a nanoimprint pattern on a first wafer; cutting the first wafer to form a first wafer including a plurality of first bare chips; transferring the nanoimprint pattern to a second wafer using the plurality of first bare chips; cutting the second wafer to form a second wafer including a plurality of second bare chips; and bonding the second wafer including the plurality of second bare chips to a quartz photolithography plate.

[0010] In the method as described above, patterning the nanoimprint pattern on the first wafer comprises: using an electron beam exposure method or a photolithography method.

[0011] A method as described in any one of the above items, wherein transferring the nanoimprint pattern onto the second wafer comprises: coating a nanoimprint glue on the second wafer; and transferring the nanoimprint pattern onto the nanoimprint glue using step-by-step nanoimprinting.

[0012] As in any of the above methods, wherein transferring the nanoimprint pattern to the second wafer further comprises: etching the nanoimprint glue to transfer the nanoimprint pattern to the second wafer.

[0013] The nanoimprint template prepared by the above method uses wafers instead of quartz photolithography plates as consumables, which reduces the cost of replacing consumables and thus reduces the cost of the nanoimprint process.

[0014] According to another aspect of the present invention, a method for reusing a quartz photolithography plate of a nanoimprint template is provided, which comprises: providing a nanoimprint template, the nanoimprint template comprising a quartz photolithography plate and a wafer comprising a bare chip above the quartz photolithography plate; debonding the wafer comprising the bare chip from the quartz photolithography plate; and bonding a new wafer comprising the bare chip to the quartz photolithography plate.

[0015] The method as described above further includes: detecting the wafer including the die, and debonding the wafer including the die from the quartz photomask is performed in response to detecting damage to the wafer including the die.

[0016] By replacing the nanoimprint template through the above method, only the wafer is replaced and the quartz photolithography plate can be reused, which reduces the cost of replacing consumables and thus reduces the cost of the nanoimprint process.

[0017] According to yet another aspect of the present invention, a method for preparing a nanoimprint template is provided, comprising: patterning a nanoimprint pattern on a wafer; and bonding the patterned wafer to a quartz photomask.

[0018] In the method as described above, patterning the nanoimprint pattern on the quartz wafer comprises: patterning the nanoimprint pattern on the quartz wafer using an electron beam exposure method or a photolithography method.

[0019] The nanoimprint template prepared by the above method uses quartz wafer instead of quartz photolithography plate as consumables, which reduces the cost of consumable replacement and thus reduces the cost of the nanoimprint process.

[0020] According to another aspect of the present invention, a method for reusing a quartz photolithography plate of a nanoimprint template is provided, which comprises: providing a nanoimprint template, the nanoimprint template comprising a quartz photolithography plate and a quartz wafer above the quartz photolithography plate; debonding the quartz wafer from the quartz photolithography plate; and bonding a new quartz wafer to the quartz photolithography plate.

[0021] The method as described above further includes: detecting the quartz wafer, and debonding the quartz wafer from the quartz photomask is performed in response to detecting damage to the quartz wafer.

[0022] By replacing the nanoimprint template through the above method, only the wafer is replaced and the quartz photolithography plate can be reused, which reduces the cost of replacing consumables and thus reduces the cost of the nanoimprint process. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Embodiments of the present invention are described with reference to the accompanying drawings, in which:

[0024] Figure 1 The conventional preparation process of hard transparent nanoimprint template is shown.

[0025] Figure 2 The conventional preparation process of hard transparent nanoimprint template is shown.

[0026] Figure 3 The process of preparing a nanoimprint template according to an embodiment of the present invention is shown.

[0027] Figure 4 A process of patterning a wafer according to an embodiment of the present invention is shown.

[0028] Figure 5A process of patterning a wafer according to another embodiment of the present invention is shown.

[0029] Figure 6 A flow chart showing a method for preparing a nanoimprint template according to an embodiment of the present invention is shown.

[0030] Figure 7 A flow chart showing a process for patterning a wafer according to an embodiment of the present invention is shown.

[0031] Figure 8 A process of reusing a quartz photolithography plate of a nanoimprint template according to an embodiment of the present invention is shown.

[0032] Fig. 9 A flow chart showing a method for reusing a quartz photolithography plate of a nanoimprint template according to an embodiment of the present invention.

[0033] Figure 10-11 The process of preparing a nanoimprint template according to an embodiment of the present invention is shown.

[0034] Fig.12 A flow chart showing a method for preparing a nanoimprint template according to an embodiment of the present invention is shown.

[0035] Fig.13 A process of reusing a quartz photolithography plate of a nanoimprint template according to an embodiment of the present invention is shown.

[0036] Fig.14 A flow chart showing a method for reusing a quartz photolithography plate of a nanoimprint template according to an embodiment of the present invention. DETAILED DESCRIPTION

[0037] According to one aspect of the present invention, a method for preparing a nanoimprint template is provided.

[0038] Figure 3 The process of preparing a nanoimprint template according to an embodiment of the present invention is shown.

[0039] As shown at (a), a wafer 310 is provided as a substrate. As shown at (b), a nanoimprint pattern is patterned on the wafer to form a patterned wafer 312. As shown at (c), the patterned wafer 312 is bonded to a quartz photomask 330 to obtain a nanoimprint template.

[0040] Figure 4 A process of patterning a wafer according to an embodiment of the present invention is shown. Figure 4 The process shown in uses electron beam lithography. Figure 4 The process shown in can be used to produce Figure 3 The patterned wafer 312 is shown in FIG.

[0041] As shown at (a), an electron beam glue 430 is coated on a wafer 410. As shown at (b), a mask 450 is used, and the wafer 410 coated with the electron beam glue 430 is exposed to an electron beam 470. The mask 450 has an opening 452, so that within the range of the opening 452, the electron beam 470 can hit the electron beam glue 430, and the remaining part of the electron beam is blocked by the mask 450, so that the pattern defined by the mask 450 can be transferred to the electron beam glue 430. The pattern defined by the mask 450 can correspond to the pattern required for nanoimprinting.

[0042] As shown at (c), the electron beam glue 430 is developed so that the properties of a portion of the electron beam glue 432 hit by the electron beam 470 change, so that it can be etched away. As shown at (d), the electron beam glue 430 and the wafer 410 are etched. In this process, the portion of the wafer 410 covered by the electron beam glue 434 not hit by the electron beam 470 is protected from being etched, while the portion of the wafer 410 covered by the electron beam glue 432 hit by the electron beam 470 is etched, thereby further transferring the pattern defined by the mask 450 to the wafer 410 to form a patterned wafer 412. As shown at (e), the electron beam glue 434 is removed to obtain a patterned wafer 412.

[0043] Figure 5 A process of patterning a wafer according to another embodiment of the present invention is shown. Figure 5 The process shown in uses photolithography. Figure 5 The process shown in can be used (for example, instead of Figure 4 The process shown in Figure 3 The patterned wafer 312 is shown in FIG.

[0044] As shown at (a), a photoresist 530 is coated on a wafer 510. As shown at (b), a mask 550 is used, and the wafer 510 coated with the photoresist 530 is exposed to ultraviolet light 552. The mask 550 has an opening 552, so that within the range of the opening 552, the ultraviolet light 552 can irradiate the photoresist 530, and the remaining part of the ultraviolet light is blocked by the mask 550, so that the pattern defined by the mask 550 can be transferred to the photoresist 530. The pattern defined by the mask 550 can correspond to the pattern required for nanoimprinting.

[0045] As shown at (c), the electron beam glue 530 is developed so that the properties of a portion of the photoresist 532 irradiated by the ultraviolet light 570 change, so that it can be etched away. As shown at (d), the photoresist 530 and the wafer 510 are etched. In this process, the portion of the wafer 510 covered by the photoresist 534 not irradiated by the ultraviolet light 470 is protected from being etched, while the portion of the wafer 510 covered by the photoresist 532 irradiated by the ultraviolet light 570 is etched, thereby further transferring the pattern defined by the mask 550 to the wafer 510 to form a patterned wafer 512. As shown at (e), the photoresist 534 is removed to obtain a patterned wafer 512. Here, the above process is described using a positive photoresist as an example of the photoresist 530. Those skilled in the art may also use a negative photoresist in combination with a suitable mask 550.

[0046] Figure 6 600 is a flow chart of a method 600 for preparing a nanoimprint template according to an embodiment of the present invention. The method 600 may be performed as follows: Figure 3 The nanoimprint templates were prepared according to the procedure described in .

[0047] The method 600 may include, at block 610, patterning a nanoimprint pattern on a wafer. In some embodiments, the step in block 610 may be performed using an electron beam lithography method. In alternative embodiments, the step in block 610 may also be performed using a photolithography method.

[0048] The method 600 may include, at block 630 , bonding the patterned wafer to a quartz photomask.

[0049] Transferring the nanoimprint pattern to a wafer instead of directly to a quartz photomask can avoid damage to the quartz photomask during the nanoimprint process, thereby reducing the cost of the nanoimprint process.

[0050] Generally speaking, the quartz photomask has a thickness greater than that of the wafer. As an example, the quartz photomask may have a thickness of the order of several millimeters, while the wafer may have a thickness of the order of several hundred nanometers. The wafer with the nanoimprint pattern is formed on the quartz photomask, which facilitates the holding of the nanoimprint template for extrusion during the nanoimprint process to make slight changes in the shape of the imprinted object. In addition, the quartz photomask has a more standard size, which can ensure the accuracy of nanoimprinting. The patterned wafer and the quartz photomask can be well combined using bonding.

[0051] Figure 7 Flowcharts showing processes 710 , 750 for patterning a wafer according to embodiments of the present invention are shown.

[0052] Process 710 shows a process of patterning a nanoimprint pattern on a wafer using an electron beam method. Process 710 may be performed as follows: Figure 4 The process shown in results in a patterned wafer.

[0053] The process 710 may include, at block 712 , coating an e-beam glue on the wafer.

[0054] Process 710 may include: at block 714, transferring the nanoimprint pattern to the wafer by electron beam lithography. This step may be, for example, as follows: Figure 4 As shown in (b) and (c) in FIG.

[0055] Process 710 may include, at block 716, etching the wafer. This step may be performed, for example, as follows: Figure 4 As shown in (d) in .

[0056] Process 710 may include: at block 718, removing the remaining electron beam glue to obtain a patterned wafer. This step may be, for example, as follows: Figure 4 As shown in (e) in .

[0057] Process 750 illustrates the process of patterning a nanoimprint pattern on a wafer using photolithography. Process 750 may be performed as follows: Figure 5 The process shown in results in a patterned wafer.

[0058] The process 750 may include, at block 752 , applying photoresist on the wafer.

[0059] Process 750 may include: at block 754, transferring the nanoimprint pattern to the wafer by photolithography. This step may be, for example, as follows: Figure 5 As shown in (b) and (c) in FIG.

[0060] Process 750 may include, at block 756, etching the wafer. This step may be performed, for example, as follows: Figure 5 As shown in (d) in .

[0061] Process 750 may include, at block 758, removing the remaining photoresist to obtain a patterned wafer. This step may be performed, for example, as follows: Figure 5 As shown in (e) in .

[0062] According to another aspect of the present invention, a method of reusing a quartz photolithography plate of a nanoimprint template is provided.

[0063] Figure 8 A process of reusing a quartz photolithography plate of a nanoimprint template according to an embodiment of the present invention is shown.

[0064] As shown in (a), a nanoimprint template may be provided, which may include a quartz lithography plate 810 and a wafer 830 on the quartz lithography plate. Figure 3-Figure 5 Describe the process or combination Figure 6-Figure 7 The method or process described herein yields a nanoimprint template.

[0065] As shown at (b), the wafer 830 may be debonded from the quartz photomask 810. For example, the wafer 830 may be inspected (eg, defect inspection performed), and the wafer 830 may be stripped from the quartz photomask 810 in response to detecting that the wafer 830 is damaged.

[0066] As shown in (c), the new wafer 850 can be bonded to the quartz photolithography plate 810 to obtain a new nanoimprint template. Figure 4-Figure 5 Describe the process or Figure 7 The described process results in a patterned wafer. Wafer 850 can be obtained by electron beam method or photolithography method.

[0067] In the above process, for the nanoimprint template, only the low-cost wafer 830 is replaced, while the high-cost quartz photomask 810 is retained and reused, thereby significantly reducing the cost of the nanoimprint process.

[0068] Fig. 9 1 is a flow chart showing a method 900 for reusing a quartz photolithography plate of a nanoimprint template according to an embodiment of the present invention. The method 900 may be performed as follows: Figure 8 The quartz photomask for nanoimprinting templates can be reused using the process described in .

[0069] The method 900 may include: at block 910, providing a nanoimprint template, the nanoimprint template including a quartz lithography plate and a wafer on the quartz lithography plate. This step may be, for example, as follows: Figure 8 In some embodiments, the nanoimprint template may be a template that is formed by combining the above Figure 3-Figure 5 Describe the process or combination Figure 6-Figure 7 The method or process described herein yields a nanoimprint template.

[0070] Method 900 may include, at block 930, peeling the wafer from the quartz photomask. This step may be performed, for example, as follows: Figure 8 In some embodiments, the method 900 may further include inspecting the wafer, and the step at block 930 may be performed in response to detecting wafer damage.

[0071] Method 900 may include, at block 930, bonding a new wafer to a quartz photomask. This step may be performed, for example, as follows: Figure 8 In some embodiments, the new wafer can be patterned with a nanoimprint pattern. In some embodiments, the new wafer can be patterned by an electron beam method. Alternatively, the new wafer can be patterned by photolithography.

[0072] By using the method 900 , only the lower cost wafer is replaced while the higher cost quartz photomask is retained and reused, thereby significantly reducing the cost of the nanoimprint process.

[0073] As an example, in the above embodiment, the wafer may be a quartz wafer or a glass wafer. As an example, the wafer may be an 8-inch wafer, and its thickness may be about 725 microns. As an example, the quartz lithography plate may be a 6-inch lithography plate, and its thickness may be about 0.25 inches. As an example, the graphic area size of the nanoimprint pattern may be 22 mm*22 mm to 26 mm*32 mm. However, the scope of the present invention is not limited thereto.

[0074] According to another aspect of the present invention, a method for preparing a nanoimprint template is provided. Figure 3-Figure 7 Compared with the process and method described above, this method first forms a nanoimprint master template, uses the nanoimprint master template to replicate the nanoimprint daughter template, and uses the nanoimprint daughter template to imprint the wafer surface pattern.

[0075] Figure 10-11 The process of preparing a nanoimprint template according to an embodiment of the present invention is shown.

[0076] exist Fig.10 In the embodiment, as shown at (a), a wafer 1010 is provided as a substrate. As shown at (b), a nanoimprint pattern is patterned on the substrate to form a patterned wafer 1012. In some embodiments, the nanoimprint pattern may be patterned as shown at (b). Figure 4 Electron beam lithography as shown in Figure 5 The nanoimprint pattern is patterned on the wafer 312 by the photolithography method shown in FIG. As shown at (c), the wafer 1012 is cut to form a wafer 1012 including a plurality of dies 1014. The wafer 1012 including a plurality of dies 1014 can be used as a nanoimprint master template for transferring the nanoimprint pattern to a nanoimprint daughter template.

[0077] Fig.10 The process in Fig.11. As shown at (d), the nanoimprint pattern is further transferred to another wafer 1030 using the bare chip 1014 of the nanoimprint sub-template. As shown at (e), a nanoimprint glue 1050 can be coated on the wafer 1030, and the nanoimprint pattern on the bare chip 1014 is transferred to the nanoimprint glue 1050 using step-by-step nanoimprinting. As described at (f), the nanoimprint glue with the nanoimprint pattern is formed on the surface of the via 1030. Subsequently, the nanoimprint glue 1050 can be etched to further transfer the nanoimprint pattern to the wafer 1030 to form a patterned via 1032, as shown at (g). As shown at (h), the wafer 1032 can be cut to form a wafer 1032 including a plurality of bare chips 1034. As shown at (i), the wafer 1032 including a plurality of bare chips 1034 can be bonded to a quartz photolithography plate 1050. Thus, the bonded wafer 1032 including the plurality of dies 1034 and the quartz photomask 1050 form a nanolithography sub-template for a subsequent nanoimprint process.

[0078] Fig.12 A flow chart of a method 1200 for preparing a nanoimprint template according to an embodiment of the present invention is shown.

[0079] The method 1200 may include, at block 1210, patterning a nanoimprint pattern on a first wafer. This step may be as follows: Fig.10 As shown in (a) to (b) in FIG. 1 , the first wafer may be Fig.10 Wafer 1010 in.

[0080] In some embodiments, the step at block 1210 may include: at block 1212, using an electron beam lithography method or a photolithography method. As an example, the process using the electron beam lithography method may be as described above with reference to Figure 4 As described above, photolithography can be used as described above. Figure 5 described.

[0081] The method 1200 may include, at block 1230, dicing the first wafer to form a first wafer including a plurality of first dies. This step may be as follows: Fig.10 As shown in (c) in .

[0082] The method 1200 may include, at block 1250, transferring the nanoimprint pattern to a second wafer using the plurality of first dies. This step may be as follows: Fig.11 As shown in (d) to (g) in FIG. 1 , the second wafer may be Fig.12 In the via 1030.

[0083] In some embodiments, the steps at block 1250 may include: at block 1252, coating a nanoimprint adhesive on the second wafer; and at block 1254, transferring the nanoimprint pattern to the nanoimprint adhesive using step-by-step nanoimprinting. The steps at blocks 1252 and 1254 may be as follows: Fig.11 As shown in (e) to (f) in FIG. 5 , the nanoimprint pattern is transferred from the first wafer including the plurality of first dies (ie, the nanoimprint master template) to the nanoimprint paste.

[0084] In some embodiments, the step at block 1250 may further include: at block 1256, etching the nanoimprint glue to transfer the nanoimprint pattern to the second wafer. The step at block 1256 may be as follows: Fig.11 As shown in (f) to (g) in the figure, the nanoimprint pattern is further transferred from the nanoimprint glue to the second wafer.

[0085] The method 1200 may include, at block 1270, dicing the second wafer to form a second wafer including a plurality of second dies. The steps at block 1270 may be as follows: Fig.11 As shown in (h) in .

[0086] The method 1200 may include: at block 1290, bonding the second wafer including the plurality of second dies to a quartz photomask, thereby obtaining a nanoimprint (sub) template for a subsequent nanoimprint process. The steps at block 1290 may be as follows: Fig.11 As shown in (i) in .

[0087] Fig.13 FIG. 2 shows a process of reusing a quartz photolithography plate of a nanoimprint template according to an embodiment of the present invention. Figure 8 Compared with the process shown in Fig.13 The process shown in FIG. 1 is replaced for a wafer including multiple dies.

[0088] As shown in (a), a nanoimprint template may be provided, which may include a quartz lithography plate 1310 and a wafer 1330 including a plurality of bare chips on the quartz lithography plate. Figure 10-11 Describe the process or combination Fig.12 The nanoimprint templates were obtained using the described method.

[0089] As shown at (b), the wafer 830 may be debonded from the quartz photomask 1310. For example, the wafer 1330 including a plurality of dies may be inspected (eg, defect inspection performed), and the wafer 1330 may be stripped from the quartz photomask 1310 in response to detecting that the wafer 1330 is damaged.

[0090] As shown in (c), a new wafer 1350 including a bare chip can be bonded to the quartz photolithography plate 1310 to obtain a new nanoimprint template. Figure 10-11 Describe the process or Fig.12 The described process results in a wafer comprising a plurality of dies.

[0091] In the above process, for the nanoimprint template, only the low-cost wafer 1330 including multiple bare chips is replaced, while the high-cost quartz photomask 1310 is retained and reused, thereby significantly reducing the cost of the nanoimprint process.

[0092] Fig.14 14 is a flow chart showing a method 1400 for reusing a quartz photolithography plate of a nanoimprint template according to an embodiment of the present invention. The method 1400 may be performed as follows: Fig.13 The quartz photomask for nanoimprinting templates can be reused using the process described in .

[0093] The method 1400 may include: at block 1410, providing a nanoimprint template, the nanoimprint template including a quartz lithography plate and a wafer including a plurality of dies on the quartz lithography plate. This step may be performed, for example, as follows: Fig.13 In some embodiments, the nanoimprint template may be a template that is formed by combining the above Figure 10-11 Describe the process or combination Fig.12 The nanoimprint templates were obtained using the described method.

[0094] Method 1400 may include, at block 1430, debonding the wafer from the quartz photomask. This step may be performed, for example, as follows: Fig.13 In some embodiments, the method 1400 may further include detecting a wafer including a plurality of dies, and the step at block 1430 may be performed in response to detecting damage to the wafer including the plurality of dies.

[0095] Method 1400 may include, at block 1430, bonding a new wafer including a plurality of dies to a quartz photomask. This step may be performed, for example, as follows: Fig.13 As shown in (c) in .

[0096] By using the method 1400, only the lower cost wafer including multiple dies is replaced, while the higher cost quartz photomask is retained and reused, thereby significantly reducing the cost of the nanoimprint process.

[0097] As an example, in the above embodiment, the wafer may be a quartz wafer or a glass wafer. As an example, the wafer may be an 8-inch wafer, and its thickness may be about 725 microns. As an example, the quartz lithography plate may be a 6-inch lithography plate, and its thickness may be about 0.25 inches. As an example, the graphic area size of the nanoimprint pattern may be 22 mm*22 mm to 26 mm*32 mm. However, the scope of the present invention is not limited thereto.

[0098] Various implementations of the invention have been described in conjunction with embodiments, which are intended to be illustrative rather than restrictive.

Claims

1. A method for preparing a nanoimprint template, comprising: patterning a nanoimprint pattern on a first wafer; cutting the first wafer to form a first wafer including a plurality of first dies; transferring the nanoimprint pattern to a second wafer using the plurality of first dies; cutting the second wafer to form a second wafer including a plurality of second dies; as well as The second wafer including the plurality of second dies is bonded to a quartz photoresist plate.

2. The method according to claim 1, characterized in that Patterning the nanoimprint pattern on the first wafer includes: Electron beam lithography or photolithography is used.

3. The method according to claim 1, characterized in that: Transferring the nanoimprint pattern to a second wafer includes: coating nanoimprint glue on the second wafer; and The nanoimprint pattern is transferred onto the nanoimprint glue by step-by-step nanoimprinting.

4. The method according to claim 1, characterized in that: Transferring the nanoimprint pattern to a second wafer further comprises: The nanoimprint glue is etched to transfer the nanoimprint pattern to the second wafer.

5. A method for reusing a quartz photolithography plate of a nanoimprint template, comprising: Providing a nanoimprint template, the nanoimprint template comprising a quartz photolithography plate and a wafer comprising a bare chip above the quartz photolithography plate; debonding the wafer including the die from the quartz photomask; and A new wafer including the bare die is bonded to the quartz photomask.

6. The method according to claim 5, characterized in that Also includes: inspecting the wafer including the die, and Debonding the wafer including the die from the quartz photomask is performed in response to detecting damage to the wafer including the die.

7. A method for preparing a nanoimprint template, comprising: patterning a nanoimprint pattern onto a wafer; as well as The patterned wafer is bonded to a quartz photomask.

8. The method according to claim 7, characterized in that Patterning the nanoimprint pattern onto the wafer involves: The nanoimprint pattern is patterned on the wafer using electron beam lithography or photolithography.

9. A method for reusing a quartz photolithography plate of a nanoimprint template, comprising: Providing a nanoimprint template, wherein the nanoimprint template comprises a quartz photolithography plate and a wafer above the quartz photolithography plate; Debonding the wafer from the quartz photomask; as well as A new wafer is bonded to the quartz photomask.

10. The method according to claim 9, characterized in that Also includes: inspecting the wafer, and Stripping the wafer from the quartz photomask is performed in response to detecting damage to the wafer.

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