High-current self-oscillation suppression atomic chip direct current radio frequency biasing circuit

Abstract

The invention discloses a high-current self-oscillation suppression atomic chip direct current radio frequency bias circuit, which belongs to the technical field of atomic chip experiments, and comprises an atomic chip, the atomic chip comprises a U-shaped trap and an H-shaped trap; a first terminal of the first radio frequency branch is connected with a first terminal of the U-shaped trap, and a second terminal of the first radio frequency branch is connected with a second terminal of the U-shaped trap; a first terminal of the first direct current branch is connected with a first terminal of the U-shaped trap, and a second terminal of the first direct current branch is connected with a second terminal of the U-shaped trap and a second terminal of the first radio frequency branch; the first terminal of the second direct current branch is connected with the first terminal of the H-type well, and the second terminal of the second direct current branch is connected with the second terminal of the H-type well; the first terminal of the second radio frequency branch circuit is connected with the third terminal of the H-type well, and the second terminal of the second radio frequency branch circuit is connected with the second terminal of the H-type well and the second terminal of the second direct current branch circuit. According to the invention, mutual isolation of radio frequency signals and direct current signals is realized, self-oscillation suppression is realized, and the bandwidth requirement from high frequency to low frequency required by an experiment is met.

Description

Technical Field

[0001] The present application relates to the field of atomic chip experimental systems, and in particular to an atomic chip DC radio frequency bias circuit for suppressing high current self-excited oscillations. Background Art

[0002] The atom chip is a highly integrated and controllable experimental platform. Through the U-shaped and H-shaped antennas on the chip, precise control of a single atomic ensemble can be achieved. These antennas can accurately adjust the state and position of the atomic ensemble when transmitting DC or RF signals. This platform not only provides strong support for basic physics research, but also creates the necessary conditions for the expansion of quantum computing experiments, and is expected to play a key role in the development of new quantum computing systems. The primary goal of conducting quantum computing experiments on this platform is to cool and trap the atomic ensemble and realize the Bose-Einstein condensate state. The evaporative cooling process of the atomic ensemble depends on the structure of the atom chip. During the evaporative cooling stage, the atomic chip structure allows the DC signal and the RF signal to act simultaneously. The DC signal is used to generate a magnetic trap to trap the atomic ensemble, while the RF signal gradually reduces the potential well depth and allows high-temperature atoms to escape from the potential well through resonance. In this process, precise control of the DC current and RF signal is crucial, and they must be isolated from each other and not interfere with each other. The required DC current during the experiment is up to 70A, and the bandwidth of the RF signal must cover 500kHz-25MHz.

[0003] To achieve the above purpose, the existing circuit usually uses a structure of capacitors and inductors in parallel to form an isolator, but the capacitors and inductors have self-oscillations. When the frequency of the RF signal is close to the self-oscillation frequency (SRF), the isolation effect of the isolator will be greatly reduced. The self-oscillation limits the effective bandwidth of the isolator, and it is difficult to meet the high bandwidth requirements of the experiment for RF signals from low frequency to high frequency. In addition, the RF signal must meet the impedance matching conditions to ensure that the output power of the RF signal amplifier is maximized, while protecting the smooth operation of the pre-amplification module to avoid performance degradation or equipment damage caused by signal reflection. Therefore, resistance must be added to the circuit, but the inductor and resistor will form LR oscillations, causing the DC power switch to instantly generate a large spike voltage (spike), causing damage to the switching elements in the circuit and interfering with the experimental process. Therefore, the existing technology cannot meet the strict requirements of the experiment for RF signals from high frequency to low frequency and current control during evaporative cooling. Summary of the invention

[0004] The present application aims to provide a circuit that meets the strict experimental requirements for converting radio frequency signals from high frequency to low frequency and achieving current control.

[0005] In order to achieve the above-mentioned purpose, the technical solution of this application is:

[0006] An atomic chip DC radio frequency bias circuit with high current self-oscillation suppression, comprising:

[0007] An atomic chip, wherein the atomic chip comprises a U-shaped well and an H-shaped well;

[0008] a first radio frequency branch, wherein a first terminal of the first radio frequency branch is connected to a first terminal of the U-shaped well, and a second terminal of the first radio frequency branch is connected to a second terminal of the U-shaped well;

[0009] A first DC branch, wherein a first terminal of the first DC branch is connected to a first terminal of the U-shaped well, and a second terminal of the first DC branch is connected to a second terminal of the U-shaped well and a second terminal of the first RF branch;

[0010] a second DC branch, wherein a first terminal of the second DC branch is connected to a first terminal of the H-type well, and a second terminal of the second DC branch is connected to a second terminal of the H-type well;

[0011] A second RF branch, wherein a first terminal of the second RF branch is connected to the third terminal of the H-type well, and a second terminal of the second RF branch is connected to the second terminal of the H-type well and the second terminal of the second DC branch.

[0012] Optionally, the first radio frequency branch includes:

[0013] A first pre-amplification module, wherein a first terminal of the first pre-amplification module is connected to a first terminal of the first RF branch;

[0014] A first RF signal generator, wherein a first terminal of the first RF signal generator is connected to a second terminal of the first pre-amplification module;

[0015] A first resistor, wherein a first terminal of the first resistor is connected to a second terminal of the first RF signal generator, and a second terminal of the first resistor is connected to a second terminal of the first RF branch; a midpoint of a series connection between the first RF signal generator and the first resistor is grounded.

[0016] Optionally, the second radio frequency branch includes:

[0017] A second pre-amplification module, wherein a first terminal of the second pre-amplification module is connected to a first terminal of the second RF branch;

[0018] A second RF signal generator, wherein a first terminal of the second RF signal generator is connected to a second terminal of the second pre-amplification module;

[0019] A second resistor, wherein a first terminal of the second resistor is connected to a second terminal of the second RF signal generator, and a second terminal of the second resistor is connected to a second terminal of the second RF branch; and a midpoint of a series connection between the second RF signal generator and the second resistor is grounded.

[0020] Optionally, the first DC branch includes:

[0021] a first inductor, wherein a first terminal of the first inductor is connected to a first terminal of the first DC branch;

[0022] A first DC power supply, wherein a first terminal of the first DC power supply is connected to a second terminal of the first inductor, and a second terminal of the first DC power supply is connected to a second terminal of the first DC branch.

[0023] Optionally, the second DC branch includes:

[0024] a second inductor, wherein a first terminal of the second inductor is connected to a first terminal of the second DC branch;

[0025] A second DC power supply, wherein a first terminal of the second DC power supply is connected to a second terminal of the second inductor, and a second terminal of the second DC power supply is connected to a second terminal of the second DC branch.

[0026] Optionally, the U-shaped well and the H-shaped well include antennas, the antenna connecting the third terminal and the fourth terminal of the U-shaped well is coupled in parallel with the antenna connecting the fourth terminal and the fifth terminal of the H-shaped well, and the antenna connecting the fourth terminal and the second terminal of the U-shaped well is coupled in parallel with the antenna connecting the fifth terminal and the first terminal of the H-shaped well.

[0027] Optionally, the grounding in the first RF branch is a virtual ground.

[0028] Optionally, the grounding in the second RF branch is a virtual ground.

[0029] Optionally, the inductance value of the first inductor is in μH level, and the parasitic capacitance value is in pF level.

[0030] Optionally, the inductance value of the second inductor is in μH level, and the parasitic capacitance value is in pF level.

[0031] The present application adopts the first resistor R1 and the second resistor R2 of 50Ω to carry out impedance matching with the first pre-amplifier module A1 and the second pre-amplifier module A2, and adopts the first inductor L1 and the second inductor L2 to isolate the RF signal, effectively avoiding the influence of the RF signal on the first DC branch 21 and the second DC branch 22; adopts the resistance comparison method, the 50Ω resistance value is much larger than the internal resistance of the atomic chip 31, effectively isolates the DC signal from entering the first RF branch 11 connected in series with the first resistor R1 and the second RF branch 12 connected in series with the second resistor R2, avoids the influence of the DC signal on the first RF branch 11 and the second RF branch 12, ensures that LR oscillation will not be formed between the inductor and the 50Ω resistor, and realizes the mutual isolation of the RF signal and the DC signal. At the same time, an inductor with an inductance value of μH level and a parasitic capacitance of pF level is adopted, and the output power of the DC RF bias circuit is set in the frequency range of 100KHz-30MHz, realizing self-excited oscillation suppression, and meeting the bandwidth requirements from high frequency to low frequency required by the atomic chip experimental system.

[0032] In order to make the above features and advantages of the application more obvious and easy to understand, the following embodiments are specifically cited and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 This is a DC RF bias circuit diagram of an atomic chip for suppressing high current self-oscillation in the present application.

[0034] Figure 2 This is a power output diagram of the atomic chip DC RF bias circuit for high current self-oscillation suppression in this application. DETAILED DESCRIPTION

[0035] In order to make the purpose and technical solution of the embodiment of the present application clearer, the technical solution of the embodiment of the present application will be clearly and completely described in conjunction with the drawings of the embodiment of the present application. Obviously, the described embodiment is a part of the embodiment of the present application, not all of the embodiments. Based on the described embodiment of the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0036] In one embodiment of the present application, please refer to Figure 1 , Figure 1 The atomic chip DC RF bias circuit diagram for high current self-excited oscillation suppression of the present application includes:

[0037] The atomic chip 31 includes a U-shaped well 311 and an H-shaped well 312;

[0038] A first radio frequency branch 11, wherein a first terminal of the first radio frequency branch 11 is connected to a first terminal of the U-shaped well 311, and a second terminal of the first radio frequency branch 11 is connected to a second terminal of the U-shaped well 311;

[0039] A first DC branch 21, wherein a first terminal of the first DC branch 21 is connected to a first terminal of the U-shaped well 311, and a second terminal of the first DC branch 21 is connected to a second terminal of the U-shaped well 311 and a second terminal of the first RF branch 11;

[0040] A second DC branch 22, wherein a first terminal of the second DC branch 22 is connected to a first terminal of the H-type well 312, and a second terminal of the second DC branch 22 is connected to a second terminal of the H-type well 312;

[0041] The second RF branch 12 has a first terminal connected to the third terminal of the H-type well 312 , and a second terminal connected to the second terminal of the H-type well 312 and the second terminal of the second DC branch 22 .

[0042] The present application adopts the first resistor R1 and the second resistor R2 of 50Ω to carry out impedance matching with the first pre-amplifier module A1 and the second pre-amplifier module A2, and adopts the first inductor L1 and the second inductor L2 to isolate the RF signal, effectively avoiding the influence of the RF signal on the first DC branch 21 and the second DC branch 22; adopts the resistance comparison method, the 50Ω resistance value is much larger than the internal resistance of the atomic chip 31, effectively isolates the DC signal from entering the first RF branch 11 connected in series with the first resistor R1 and the second RF branch 12 connected in series with the second resistor R2, avoids the influence of the DC signal on the first RF branch 11 and the second RF branch 12, ensures that LR oscillation will not be formed between the inductor and the 50Ω resistor, and realizes the mutual isolation of the RF signal and the DC signal. At the same time, an inductor with an inductance value of μH level and a parasitic capacitance of pF level is adopted, and the output power of the DC RF bias circuit is set in the frequency range of 100KHz-30MHz, realizing self-excited oscillation suppression, and meeting the bandwidth requirements from high frequency to low frequency required by the atomic chip experimental system.

[0043] As an example, the first radio frequency branch 11 includes:

[0044] A first pre-amplification module A1, wherein a first terminal of the first pre-amplification module A1 is connected to a first terminal of the first RF branch 11;

[0045] A first RF signal generator S1, wherein a first terminal of the first RF signal generator S1 is connected to a second terminal of the first pre-amplification module A1;

[0046] The first resistor R1 has a first terminal connected to the second terminal of the first RF signal generator S1, and a second terminal connected to the second terminal of the first RF branch 11; and a midpoint of the series connection between the first RF signal generator S1 and the first resistor R1 is grounded.

[0047] As an example, the second radio frequency branch 12 includes:

[0048] A second pre-amplification module A2, wherein a first terminal of the second pre-amplification module A2 is connected to a first terminal of the second RF branch 12;

[0049] A second RF signal generator S2, wherein a first terminal of the second RF signal generator S2 is connected to a second terminal of the second pre-amplification module A2;

[0050] The second resistor R2 has a first terminal connected to the second terminal of the second RF signal generator S2, and a second terminal connected to the second terminal of the second RF branch 12; and a midpoint of the series connection between the second RF signal generator S2 and the second resistor R2 is grounded.

[0051] As an example, the first DC branch 21 includes:

[0052] A first inductor L1, wherein a first terminal of the first inductor L1 is connected to a first terminal of the first DC branch 21;

[0053] A first DC power supply DC1 , wherein a first terminal of the first DC power supply DC1 is connected to a second terminal of the first inductor L1 , and a second terminal of the first DC power supply DC1 is connected to a second terminal of the first DC branch 21 .

[0054] As an example, the second DC branch 22 includes:

[0055] A second inductor L2, a first terminal of the second inductor L2 is connected to a first terminal of the second DC branch 22;

[0056] A second DC power source DC2 , wherein a first terminal of the second DC power source DC2 is connected to a second terminal of the second inductor L2 , and a second terminal of the second DC power source DC2 is connected to a second terminal of the second DC branch 22 .

[0057] As an example, the U-type well 311 and the H-type well 312 include an antenna, the antenna connecting the third terminal and the fourth terminal of the U-type well 311 is coupled in parallel with the antenna connecting the fourth terminal and the fifth terminal of the H-type well 312, the antenna connecting the fourth terminal and the second terminal of the U-type well 311 is coupled in parallel with the antenna connecting the fifth terminal and the first terminal of the H-type well 312, and further, the U-type well 311 and the H-type well 312 generate radiation through parallel antenna coupling.

[0058] As an example, the ground in the first RF branch 11 and the second RF branch 12 is a virtual ground to prevent the noise of the ground from affecting the RF branch and maintain the stability of the transmitted RF signal.

[0059] As an example, the impedance of the first RF signal generator S1 and the second RF signal generator S2 is 50Ω. The first RF signal generator S1 and the second RF signal generator S2 serve as inputs of RF signals. In order to ensure that the RF signal meets the impedance matching condition, the first resistor R1 and the second resistor R2 are both set to 50Ω resistors, so that the output power of the first RF signal generator S1 and the second RF signal generator S2 is maximized, while protecting the smooth operation of the first pre-amplifier module A1 and the second pre-amplifier module A2 to avoid performance degradation or equipment damage due to signal reflection.

[0060] As an example, see Figure 2 , since the self-oscillation frequency formula is:

[0061]

[0062] Among them, f srf represents the self-excited oscillation frequency, L represents the inductance value, C p Represents the parasitic capacitance of the inductor. When the first inductor L1 and the second inductor L2 are both set to inductance values ​​of μH level and parasitic capacitance values ​​of pF level, the self-oscillation frequency formula shows that the frequency range of self-oscillation is greater than 100MHz. In actual circuit application, the frequency range of self-oscillation can even reach greater than 150MHz. No self-oscillation will occur in the frequency range below this frequency range. Set the DC RF bias circuit output power within the frequency range of 100KHz-30MHz. Figure 2 This is the power output diagram of the atomic chip DC RF bias circuit for high current self-oscillation suppression in this application. Figure 2 The ordinate is the normalized power, Figure 2 The horizontal axis is the frequency, given by Figure 2 It can be seen that the output power of the DC RF bias circuit remains basically unchanged within the frequency range of 100KHz-30MHz, and is much larger than the bandwidth range of 500kHz-25MHz required by the experiment, thereby realizing the inherent self-oscillation suppression of the DC RF bias circuit of the atomic chip and meeting the experimental requirements for high bandwidth of RF signals from low frequency to high frequency.

[0063] Next, continue to combine Figure 1 Describes how this application works.

[0064] In another embodiment of the present application, the frequency range of the output RF signal of the first RF signal generator S1 and the second RF signal generator S2 is 100kHz-30MHz; the gain of the first pre-amplifier module A1 and the second pre-amplifier module A2 is 40dB; the inductance value of the first inductor L1 and the second inductor L2 is 3.3μH.

[0065] As an example, the working mode of the U-shaped well 131 is first introduced.

[0066] As an example, in the first RF branch 11, the first RF signal generator S1 generates a 5MHz, 0dBm RF signal, which is power amplified by the first pre-amplifier module A1 to form a 5MHz, 10W pre-amplified RF signal. The first RF branch 11 outputs the pre-amplified signal through the first DC branch 21 and the U-shaped well 311.

[0067] As an example, the first inductor L1 is connected in series in the first DC branch 21. Since the inductor can block the high-frequency signal in the high-frequency circuit, and the higher the frequency, the greater the resistance, the first inductor L1 has the function of isolating the radio frequency signal. The impedance of the first DC branch 21 is much larger than the impedance of the U-shaped well 311. The pre-amplified radio frequency signal is isolated and cannot enter the first DC branch 21, but can only enter the first terminal of the U-shaped well 311, thereby avoiding the influence of the pre-amplified radio frequency signal on the first DC power supply DC1, and providing the U-shaped well 311 with a stable radio frequency signal required for its operation, that is, radiation is generated on the antenna of the U-shaped well 311 of the atomic chip 31 through the antenna parallel to the H-shaped well 312, thereby radiating the pre-amplified radio frequency signal.

[0068] As an example, the pre-amplified RF signal radiated on the antenna of the U-shaped well 311 is output from the second terminal of the U-shaped well 311, passes through the first DC branch 21 and the first RF branch 11. Since the pre-amplified RF signal is isolated and cannot enter the first DC branch 21, it can only enter the first RF branch 11 and be absorbed by the first resistor R1.

[0069] As an example, in the first DC branch 21, the first DC power supply DC1 outputs a DC signal of 30A through the first inductor L1. For stable DC power, the inductive reactance of the inductor is zero. When the DC signal passes through the first RF branch 11 and the U-shaped well 311 in parallel, the first resistor R1 with a series resistance of 50Ω in the first RF branch 11, since the impedance of the first resistor R1 is much greater than the impedance of the U-shaped well 311, the DC signal is isolated and cannot enter the first RF branch 11, and can only enter the first end of the U-shaped well 311, providing the U-shaped well 311 with the DC signal required for its operation.

[0070] Furthermore, the pre-amplified RF signal output by the first RF branch 11 is isolated and cannot enter the first DC branch 21, and the DC signal output by the first DC branch 21 is isolated and cannot enter the first RF branch 11, thereby realizing mutual isolation between the RF signal and the DC current, and no LR oscillation is formed between the first inductor L1 and the first resistor R1. At the same time, the first inductor L1 connected in series in the first DC branch 21 prevents the DC signal from changing, and no spike voltage is generated at the instant of switching the first DC power supply DC1, thereby avoiding damage to the switching elements in the circuit, so that the DC signal input to the first terminal of the U-shaped well 311 generates a stable magnetic field.

[0071] As an example, the working method of the H-type well 312 is described below.

[0072] As an example, in the second DC branch 22, the second DC power supply DC2 outputs a DC signal of 30A through the second inductor L2 and enters the first end of the H-type well 312; since the second RF branch 12 includes a second resistor R2 with a series resistance of 50Ω, the impedance of the second resistor R2 is much greater than the impedance of the H-type well 312, and thus the DC signal is isolated and cannot enter the second RF branch 12, but can only enter the first end of the H-type well 312, thereby providing the H-type well 312 with the DC signal required for its operation.

[0073] As an example, in the second RF branch 12, the second RF signal generator S2 generates a 5MHz, 0dBm RF signal, which is power amplified by the second pre-amplification module A2 to form a 5MHz, 10W pre-amplified RF signal, which enters the third terminal of the H-type well 312; since the second inductor L2 has the function of isolating the RF signal, the pre-amplified RF signal is isolated and cannot enter the second DC branch 22, and can only enter the third terminal of the H-type well 312, thereby avoiding the influence of the pre-amplified RF signal on the second DC power supply DC2, and providing the H-type well 312 with the RF signal required for its operation, that is, radiation is generated on the antenna of the H-type well 312 of the atomic chip 31 through the antenna parallel to the U-type well 311, thereby radiating the pre-amplified RF signal.

[0074] As an example, the pre-amplified RF signal radiated on the antenna of the H-type well 312 is output from the second terminal of the H-type well, passes through the second DC branch 22 and the second RF branch 12. Since the pre-amplified RF signal is isolated and cannot enter the second DC branch 22, it can only enter the second RF branch 12 and be absorbed by the second resistor R2.

[0075] Furthermore, the RF signal output by the second RF branch 12 is isolated and cannot enter the second DC branch 22, and the DC signal output by the second DC branch 22 is isolated and cannot enter the second RF branch 12, thereby achieving mutual isolation between the RF signal and the DC current, and no LR oscillation is formed between the second inductor L2 and the second resistor R2. At the same time, the second inductor L2 ensures that the DC signal input to the first terminal of the H-type well 312 generates a stable magnetic field, and its working principle is consistent with that of the first inductor L1, which will not be repeated here.

[0076] As an example, the first RF signal generator S1, the second RF signal generator S2, the first DC power supply DC1 and the second DC power supply DC2 are independent of each other and can simultaneously provide the U-shaped well 311 and the H-shaped well 312 with the pre-amplified RF signal and DC signal required for their operation.

[0077] In summary, the present application adopts the first resistor R1 and the second resistor R2 of 50Ω to perform impedance matching with the first pre-amplifier module A1 and the second pre-amplifier module A2, and adopts the first inductor L1 and the second inductor L2 to isolate the RF signal, effectively avoiding the influence of the RF signal on the first DC branch 21 and the second DC branch 22; adopting the resistance comparison method, the resistance value of 50Ω resistor is much larger than the internal resistance of the atomic chip 13, effectively isolating the DC signal from entering the first RF branch 11 connected in series with the first resistor R1 and the second RF branch 12 connected in series with the second resistor R2, avoiding the influence of the DC signal on the first RF branch 11 and the second RF branch 12, ensuring that LR oscillation will not be formed between the inductor and the 50Ω resistor, and realizing the mutual isolation of the RF signal and the DC signal. At the same time, an inductor with an inductance value of μH level and a parasitic capacitance of pF level is adopted, and the output power of the DC RF bias circuit is set in the frequency range of 100KHz-30MHz, realizing self-excited oscillation suppression, and meeting the bandwidth requirements from high frequency to low frequency required by the atomic chip experimental system.

[0078] Although the present application has been disclosed as above with the embodiments, it is not intended to limit the present application. Any person with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present application. Therefore, the scope of protection of the present application shall be determined by the scope of the attached patent application.

Claims

1. An atomic chip DC RF bias circuit with high current self-oscillation suppression, characterized in that: include, An atomic chip, wherein the atomic chip comprises a U-shaped well and an H-shaped well; a first radio frequency branch, wherein a first terminal of the first radio frequency branch is connected to a first terminal of the U-shaped well, and a second terminal of the first radio frequency branch is connected to a second terminal of the U-shaped well; A first DC branch, wherein a first terminal of the first DC branch is connected to a first terminal of the U-shaped well, and a second terminal of the first DC branch is connected to a second terminal of the U-shaped well and a second terminal of the first RF branch; a second DC branch, wherein a first terminal of the second DC branch is connected to a first terminal of the H-type well, and a second terminal of the second DC branch is connected to a second terminal of the H-type well; A second RF branch, wherein a first terminal of the second RF branch is connected to the third terminal of the H-type well, and a second terminal of the second RF branch is connected to the second terminal of the H-type well and the second terminal of the second DC branch.

2. The atomic chip DC RF bias circuit with high current self-oscillation suppression as claimed in claim 1, characterized in that: The first radio frequency branch comprises: A first pre-amplification module, wherein a first terminal of the first pre-amplification module is connected to a first terminal of the first RF branch; A first RF signal generator, wherein a first terminal of the first RF signal generator is connected to a second terminal of the first pre-amplification module; A first resistor, wherein a first terminal of the first resistor is connected to a second terminal of the first RF signal generator, and a second terminal of the first resistor is connected to a second terminal of the first RF branch; a midpoint of a series connection between the first RF signal generator and the first resistor is grounded.

3. The atomic chip DC RF bias circuit with high current self-oscillation suppression as claimed in claim 2, characterized in that: The second radio frequency branch comprises: A second pre-amplification module, wherein a first terminal of the second pre-amplification module is connected to a first terminal of the second RF branch; A second RF signal generator, wherein a first terminal of the second RF signal generator is connected to a second terminal of the second pre-amplification module; A second resistor, wherein a first terminal of the second resistor is connected to a second terminal of the second RF signal generator, and a second terminal of the second resistor is connected to a second terminal of the second RF branch; and a midpoint of a series connection between the second RF signal generator and the second resistor is grounded.

4. The atomic chip DC RF bias circuit with high current self-oscillation suppression as claimed in claim 3, characterized in that: The first DC branch comprises: a first inductor, wherein a first terminal of the first inductor is connected to a first terminal of the first DC branch; A first DC power supply, wherein a first terminal of the first DC power supply is connected to a second terminal of the first inductor, and a second terminal of the first DC power supply is connected to a second terminal of the first DC branch.

5. The atomic chip DC RF bias circuit with high current self-oscillation suppression as claimed in claim 4, characterized in that: The second DC branch comprises: a second inductor, wherein a first terminal of the second inductor is connected to a first terminal of the second DC branch; A second DC power supply, wherein a first terminal of the second DC power supply is connected to a second terminal of the second inductor, and a second terminal of the second DC power supply is connected to a second terminal of the second DC branch.

6. The atomic chip DC RF bias circuit with high current self-oscillation suppression as claimed in claim 1, characterized in that: The U-shaped well and the H-shaped well include antennas, the antenna connecting the third terminal and the fourth terminal of the U-shaped well is coupled in parallel with the antenna connecting the fourth terminal and the fifth terminal of the H-shaped well, and the antenna connecting the fourth terminal and the second terminal of the U-shaped well is coupled in parallel with the antenna connecting the fifth terminal and the first terminal of the H-shaped well.

7. The atomic chip DC RF bias circuit with high current self-oscillation suppression as claimed in claim 2, characterized in that: The grounding in the first radio frequency branch is a virtual ground.

8. The atomic chip DC RF bias circuit with high current self-oscillation suppression as claimed in claim 3, characterized in that: The grounding in the second radio frequency branch is a virtual ground.

9. The atomic chip DC RF bias circuit with high current self-oscillation suppression as claimed in claim 4, characterized in that: The inductance value of the first inductor is in μH level, and the parasitic capacitance value is in pF level.

10. The atomic chip DC RF bias circuit with high current self-oscillation suppression as claimed in claim 5, characterized in that: The inductance value of the second inductor is in μH level, and the parasitic capacitance value is in pF level.

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