Dual-sided pixel circuit and write method
By setting pre-storage units and driving units on the upper and lower substrates respectively, the problem of insufficient aperture ratio in high refresh rate and high brightness displays is solved, and the stability and aperture ratio of the pixel circuit are improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHENGDU JIUTIAN HUAXIN TECH CO LTD
- Filing Date
- 2025-03-05
- Publication Date
- 2026-06-02
AI Technical Summary
Existing technologies struggle to simultaneously guarantee the aperture ratio of pixel circuits in high refresh rate and high brightness displays, and the increased requirements for backlight brightness specifications and lifespan lead to higher costs.
The design employs a double-sided pixel circuit, with the pre-storage unit and the driving unit respectively placed on the upper and lower substrates and connected by conductive materials, thereby reducing the area occupied by the pixel display area and increasing the aperture ratio.
By separating the transistor arrangement on the substrate, the difficulty of layout fabrication is reduced, the transistor yield and pixel circuit stability are improved, and the aperture ratio is enhanced.
Smart Images

Figure CN119889252B_ABST