Multi-ferroic memory internal logic device based on orbit transfer torque and implementation method of multi-ferroic memory internal logic device

Abstract

The invention discloses a multiferroic memory internal logic device based on orbit transfer torque and an implementation method thereof. The vertical magnetization overturning direction of the free ferromagnetic layer is related to the direction of the orbital transfer torque applied by the two-dimensional Belry curvature ferroelectric layer, and the orbital magnetic moment polarization direction is closely related to the in-plane current direction and the Belry curvature dipole moment direction. Bottom gate voltage applied by a bottom gate and in-plane current applied by a source electrode and a drain electrode are respectively used as logic input, and a tunneling resistor is used as logic output, so that in-memory logic is realized; according to the invention, a track transfer torque direction generated by ferroelectric polarization and current control track magnetization is utilized, so that fully-electrically-controlled vertical magnetization overturning is realized, and a new generation of memory logic devices is realized; in-memory logic operation can be realized in the same MRAM unit, state control of the MRAM is more accurate, misjudgment is avoided, reliability and anti-interference performance of in-memory calculation are improved, and energy efficiency of a system is further improved. The method is expected to realize large-scale commercial application.

Description

Technical Field

[0001] The present invention relates to in-memory logic technology, and in particular to a multi-ferroic in-memory logic device based on track transfer torque and a realization method thereof. Background Art

[0002] With the rapid development of information technology, the application demand in the fields of big data, cloud computing, artificial intelligence, machine learning and the Internet of Things is growing, which poses unprecedented challenges to the computing speed and storage capacity of computers. Driven by Moore's Law, the density of transistors continues to increase, and the computing power has been greatly improved. However, under the von Neumann architecture, although the performance of the central processing unit (CPU) continues to increase, the speed and bandwidth of the memory have not increased synchronously. The data access speed lags far behind the computing speed. The CPU is waiting for memory response most of the time, and the CPU performance cannot be fully utilized, resulting in a bottleneck of the memory wall. To solve this bottleneck, the in-memory computing architecture and logic in memory were proposed, and the technology has gradually become a research hotspot. The in-memory computing architecture realizes storage and computing functions in the memory unit at the same time, reduces the movement of data between the storage and the processor, and greatly improves the computing efficiency and energy efficiency. In contrast, the in-memory logic device focuses on using the physical characteristics of the memory to realize logical operations. By performing logical calculations inside the memory unit, it further reduces latency and power consumption. It is a new computing architecture that can significantly improve computing performance.

[0003] Most of the existing in-memory logic devices are based on new storage technologies such as resistive random access memory (RRAM), phase change random access memory (PCM) and ferroelectric field-effect transistor (FeFET). These devices have the characteristics of non-volatility and low power consumption. However, RRAM devices have problems such as poor consistency, insufficient data retention, high power consumption, poor durability, complex integration process and read-write interference; PCM devices have high write energy consumption, slow write speed, poor device durability, low temperature stability, narrow resistance window and high process complexity; and FeFET has problems such as ferroelectric material depolarization effect, poor write durability, read-write operation interference, short data retention time, incompatibility with CMOS process and large device variability. Magnetic random access memory (MRAM) has the advantages of non-volatility, high-speed read and write, strong durability, low power consumption, long data retention time and CMOS process compatibility, and is regarded as an ideal choice for the next generation of in-memory logic devices.

[0004] MRAM is a non-volatile storage technology based on magnetic tunnel junction (MTJ). Its basic storage unit consists of a free ferromagnetic layer, a fixed ferromagnetic layer and a tunneling layer. The free ferromagnetic layer and the fixed ferromagnetic layer are usually made of ferromagnetic materials, such as cobalt-iron alloy or nickel-iron alloy. The magnetization direction of the free ferromagnetic layer can be changed by an external current or magnetic field, while the fixed ferromagnetic layer is usually fixed with a designed exchange coupling layer to provide a stable reference magnetic field that is not affected by the outside world. The tunneling layer is located between the free ferromagnetic layer and the fixed ferromagnetic layer, and is usually composed of a thin layer of insulating material (such as magnesium oxide, chromium oxide, etc.). This insulating material is very thin, usually only a few nanometers. The data storage and reading process depends on the tunneling magnetoresistance effect (TMR). When the magnetization directions of the free ferromagnetic layer and the fixed ferromagnetic layer are consistent, the tunneling resistance of the electrons is low, indicating that the stored data is "0"; when the magnetization directions of the free ferromagnetic layer and the fixed ferromagnetic layer are inconsistent, the tunneling resistance is high, indicating that the stored data is "1". Therefore, MRAM needs to use electrical methods to control the magnetization state of the free ferromagnetic layer to achieve the function of data writing.

[0005] The current implementation methods of MRAM in-memory logic mainly include parallel resistance method, write current modulation method and spin logic gate method. The parallel resistance method requires the use of two or more MRAM unit resistance states in parallel. Although it can reduce the energy consumption caused by data transmission, the resistance difference is too small, it is difficult to accurately detect the state, and it is easy to make misjudgments. In high-frequency operations, the thermal effect of current and the crosstalk caused by parallel connection are more serious; the read and write current modulation method is more flexible, but high current operation increases power consumption and accelerates device aging, and it is difficult to accurately control the read and write current. Misoperation difficulties lead to storage errors or data loss; the spin logic gate method requires two or more MRAMs in parallel, which requires high current control accuracy, and there is a conflict between the difficulty of reading and writing operations. Therefore, the three mainstream methods of using MRAM to implement in-memory logic are currently facing many challenges in practical applications. Summary of the invention

[0006] In view of the problems existing in the above prior art, the present invention proposes a multi-ferroic in-memory logic device based on orbital transfer torque and an implementation method thereof, and utilizes orbital transfer torque (OTT) and ferroelectric polarization to realize fully electrically controlled vertical magnetization flipping XNOR gate and XOR gate in-memory logic devices; constructs a heterojunction of a two-dimensional Berry curvature ferroelectric layer and a magnetic tunnel junction layer, utilizes the two-dimensional Berry curvature ferroelectric layer to realize orbital flow driven vertical magnetization flipping, and simultaneously controls the two-dimensional Berry curvature ferroelectric layer through bottom gate voltage to generate ferroelectric polarization to make interlayer slip, change the direction of Berry curvature dipole moment, thereby controlling the polarization direction of orbital magnetic moment, realizing switching between two magnetization states, and realizing dual-input single-output in-memory logic.

[0007] One object of the present invention is to provide a multiferroic memory logic device based on track transfer torque.

[0008] The multi-ferroic memory logic device based on orbital transfer torque of the present invention comprises: a substrate, a bottom gate, a dielectric layer, a source, a drain, a top electrode, a two-dimensional Berry curvature ferroelectric layer, a free ferromagnetic layer, a tunneling layer, a fixed ferromagnetic layer and a packaging layer; wherein, an upper surface insulating layer is formed on the substrate; a bottom gate is formed on the insulating substrate; an insulating dielectric layer is formed on the bottom gate; a source, a drain and a top electrode are respectively formed on the dielectric layer; a two-dimensional Berry curvature ferroelectric layer is formed on the insulating dielectric layer and between the source and the drain, two ends of the two-dimensional Berry curvature ferroelectric layer are respectively in contact with the source and the drain, an a-axis of the two-dimensional Berry curvature ferroelectric layer is parallel to the center line connecting the source and the drain, and the top electrode is in contact with the two-dimensional Berry curvature ferroelectric layer. The layers are not in contact; a free ferromagnetic layer and a tunneling layer are sequentially formed on the two-dimensional Berry curvature ferroelectric layer; a fixed ferromagnetic layer is formed on the tunneling layer, and the edge of the fixed ferromagnetic layer is in contact with the top electrode; the fixed ferromagnetic layer, the tunneling layer and the free ferromagnetic layer constitute a magnetic tunnel junction; the two-dimensional Berry curvature ferroelectric layer and the magnetic tunnel junction layer constitute a heterojunction; an encapsulation layer is formed on the fixed ferromagnetic layer, and the encapsulation layer completely covers the entire heterojunction; the bottom gate is connected to the positive pole of the DC voltage source, and the negative pole of the DC voltage source is grounded; the source is connected to the positive pole of the first current source, and the negative pole of the first current source is grounded; the drain is grounded; the top electrode is connected to the positive pole of the second current source and the positive pole of the DC voltmeter, and the negative poles of the second current source and the DC voltmeter are grounded;

[0009] The two-dimensional Berry curvature ferroelectric layer adopts a two-dimensional layered material with a non-zero Berry curvature dipole moment and a vertical slip ferroelectric polarization, and the number of layers is an odd number, and the direction of the Berry curvature dipole moment is controlled by controlling the slip ferroelectric polarization direction of the two-dimensional Berry curvature ferroelectric layer with an odd number of layers;

[0010] An in-plane current is applied to the source and drain through a first current source, thereby applying an in-plane current to the two-dimensional Berry curvature ferroelectric layer, and an out-of-plane orbital magnetic moment polarization is generated under the joint action of the Berry curvature dipole moment of the two-dimensional Berry curvature ferroelectric layer and the in-plane current, that is, the current induces the orbital flow, which can generate an orbital transfer torque, and the direction of the orbital transfer torque is related to the direction of the Berry curvature dipole moment and the direction of the in-plane current; the orbital transfer torque drives the free ferromagnetic layer located on the two-dimensional Berry curvature ferroelectric layer to undergo a vertical magnetization reversal, and the direction of the vertical magnetization reversal is related to the direction of the orbital transfer torque, thereby realizing current-driven vertical magnetization reversal; by controlling the direction of the in-plane current, the direction of the orbital magnetic moment polarization is controlled, thereby controlling the vertical magnetization reversal direction of the free ferromagnetic layer;

[0011] At the same time, a bottom gate voltage is applied to the bottom gate through a direct current power supply, thereby generating an electric displacement field perpendicular to the surface in the two-dimensional Berry curvature ferroelectric layer, generating a vertical slip ferroelectric polarization in the two-dimensional Berry curvature ferroelectric layer, and causing relative interlayer slip in the two-dimensional Berry curvature ferroelectric layer; the positive and negative changes in the bottom gate voltage change the direction of the interlayer relative slip in the two-dimensional Berry curvature ferroelectric layer, causing the direction of the Berry curvature dipole moment to change, thereby changing the direction of the orbital transfer torque, and causing the vertical magnetization reversal direction of the free ferromagnetic layer to change; by controlling the positive and negative of the bottom gate voltage applied to the two-dimensional Berry curvature ferroelectric layer, the direction of the slip ferroelectric polarization is controlled, and then the direction of the orbital transfer torque is controlled, thereby controlling the vertical magnetization reversal direction of the free ferromagnetic layer;

[0012] The vertical magnetization direction of the fixed ferromagnetic layer is fixed; when the vertical magnetization directions of the fixed ferromagnetic layer and the free ferromagnetic layer are parallel, the tunneling resistance of the magnetic tunnel junction is in a low resistance state; when the vertical magnetization directions of the fixed ferromagnetic layer and the free ferromagnetic layer are antiparallel, the tunneling resistance of the magnetic tunnel junction is in a high resistance state;

[0013] A vertical current is applied to the top electrode through a second current source, the vertical current is much smaller than the in-plane current, and a tunnel resistance is obtained according to the voltage difference between the vertical current passing through the magnetic tunnel junction and the source and drain electrodes;

[0014] The vertical magnetization reversal direction of the free ferromagnetic layer is related to the direction of the orbital transfer torque applied by the two-dimensional Berry curvature ferroelectric layer, the direction of the orbital transfer torque applied by the two-dimensional Berry curvature ferroelectric layer is related to the polarization direction of the orbital magnetic moment, the polarization direction of the orbital magnetic moment is closely related to the direction of the in-plane current and the direction of the Berry curvature dipole moment, the direction of the Berry curvature dipole moment is related to the direction of the slip ferroelectric polarization, and the direction of the slip ferroelectric polarization is controlled by the bottom gate voltage, so that the polarization direction of the orbital magnetic moment is controlled by setting the positive and negative in-plane current applied by the source and drain and the bottom gate voltage applied by the bottom gate, respectively, and the direction of the generated orbital transfer torque is controlled respectively; the bottom gate voltage applied by the bottom gate is used as a logic input, and the positive voltage and the negative voltage are used as logic inputs "1" and "0" respectively; the in-plane current applied by the source and drain is used as another logic input, and the positive current and the negative current are used as logic inputs "1" and "0" respectively;

[0015] The tunneling resistance is related to the perpendicular magnetization direction of the free ferromagnetic layer. The tunneling resistance is used as the logic output, and the low resistance state and high resistance state are used to store and output the logic "0" and "1" respectively;

[0016] By changing the bottom gate voltage and / or the in-plane current direction, the polarization direction of the orbital magnetic moment is changed, thereby controlling the vertical magnetization reversal of the free ferromagnetic layer, and realizing the in-memory logic by jointly controlling the tunneling resistance through the bottom gate voltage direction and the in-plane current direction.

[0017] The substrate serves as a supporting layer, and the dielectric layer is made of insulating materials, such as hexagonal boron nitride h-BN.

[0018] The two-dimensional Berry curvature ferroelectric layer uses an odd-numbered two-dimensional material, which has a Berry curvature dipole moment and slip ferroelectricity; the odd-numbered layers are one of tungsten ditelluride WTe2, niobium iridium telluride NbIrTe4 and tantalum iridium telluride TaIrTe4; the thickness is 3nm to 10nm. In the two-dimensional Berry curvature ferroelectric layer, due to the surface symmetry breaking, it has a Berry curvature dipole moment along the a-axis of the crystal, and the vertical electric displacement field can cause the two-dimensional Berry curvature ferroelectric layer to be ferroelectrically polarized, and relative slip occurs between the layers along the b-axis. The direction of the Berry curvature dipole moment is determined by the relative slip direction, that is, by the direction of the vertical electric displacement field.

[0019] The tunneling layer is made of insulating material, such as hexagonal boron nitride, and has a thickness of 0.5 nm to 2 nm.

[0020] The free ferromagnetic layer is made of thin layer material with perpendicular magnetic anisotropy, with a thickness of 5nm to 15nm, and the iron-germanium-tellurium compound Fe x GeTe2 (thickness 4nm~10nm), iron gallium telluride compound Fe x One of GaTe2 (thickness 4nm to 10nm), chromium ditelluride CrTe2 (thickness 2nm to 8nm) and chromium triiodide CrI3 (thickness 2nm to 8nm), x is the relative proportion or amount of the iron (Fe) element, indicating the number of iron atoms per unit structure. The fixed ferromagnetic layer uses a thin layer material with perpendicular magnetic anisotropy, iron germanium telluride compound Fe x GeTe2, Fe x One of GaTe2, chromium ditelluride CrTe2 and chromium triiodide CrI3, with a thickness of 20nm to 30nm. The initialization direction of the perpendicular magnetization of the fixed ferromagnetic layer is controlled by an external magnetic field, and is isolated from the two-dimensional Berry curvature ferroelectric layer by a tunneling layer, so the perpendicular magnetization direction is not affected by the two-dimensional Berry curvature ferroelectric layer, and the perpendicular magnetization direction of the fixed ferromagnetic layer remains unchanged.

[0021] The encapsulation layer is made of insulating material, such as h-BN, with a thickness of 5nm to 20nm.

[0022] The in-plane current needs to be greater than the critical current of the perpendicular magnetization reversal between the two-dimensional layered Berry curvature ferroelectric layer and the free ferromagnetic layer, which is approximately 1 mA. The perpendicular current is much smaller than the critical current and is usually in the order of μA. The bottom gate voltage needs to be greater than the slip ferroelectric polarization voltage, which is approximately 3 V.

[0023] Two-dimensional Berry curvature ferroelectric layer refers to a two-dimensional material with ferroelectricity and non-zero Berry curvature dipole moment. Berry curvature is closely related to orbital magnetic moment. Under the action of electric field, the Fermi surface of electrons tilts. In the system with Berry curvature dipole moment, net Berry curvature will be caused, which will lead to polarization of orbital magnetic moment along the out-of-plane direction and form orbital flow. In two-dimensional materials, orbital magnetic moment is arranged along the out-of-plane direction, forming out-of-plane anti-damping torque, which can realize vertical magnetization reversal without external magnetic field assistance. Two-dimensional ferroelectric materials have slip ferroelectricity, that is, they can change the direction of ferroelectric polarization by applying external electric displacement field, relative slip occurs between layers, and the slip ferroelectric polarization state is maintained in the absence of external electric displacement field. For two-dimensional ferroelectric materials with non-zero Berry curvature dipole moment and odd number of layers, changing the slip direction can change the direction of Berry curvature dipole moment, thereby changing the polarization direction of orbital magnetic moment along the out-of-plane direction, and then controlling the direction of vertical magnetization reversal.

[0024] Another object of the present invention is to provide a method for realizing a logic device in a multi-ferroic memory based on track transfer torque.

[0025] The method for realizing a multi-ferroic memory logic device based on track transfer torque of the present invention comprises the following steps:

[0026] 1) Preparation of logic devices in multi-ferroic memory:

[0027] a) forming an upper surface insulating layer on a substrate; forming a bottom gate on the insulating substrate; forming an insulating dielectric layer on the bottom gate; forming a source, a drain and a top electrode on the dielectric layer respectively; forming a two-dimensional Berry curvature ferroelectric layer on the insulating dielectric layer and between the source and the drain, wherein two ends of the two-dimensional Berry curvature ferroelectric layer contact the source and the drain respectively, the a-axis of the two-dimensional Berry curvature ferroelectric layer is parallel to the center line connecting the source and the drain, and the top electrode has no contact with the two-dimensional Berry curvature ferroelectric layer; forming a free ferromagnetic layer and a tunneling layer on the two-dimensional Berry curvature ferroelectric layer in sequence; forming a fixed ferromagnetic layer on the tunneling layer, wherein the edge of the fixed ferromagnetic layer contacts the top electrode; the fixed ferromagnetic layer, the tunneling layer and the free ferromagnetic layer constitute a magnetic tunnel junction; the two-dimensional Berry curvature ferroelectric layer and the magnetic tunnel junction layer constitute a heterojunction; forming an encapsulation layer on the fixed ferromagnetic layer, wherein the encapsulation layer completely covers the entire heterojunction;

[0028] b) the bottom gate is connected to the positive electrode of a DC voltage source, the negative electrode of the DC voltage source is grounded; the source electrode is connected to the positive electrode of a first current source, the negative electrode of the first current source is grounded; the drain electrode is grounded; the top electrode is connected to the positive electrode of a second current source and the positive electrode of a DC voltmeter, the negative electrodes of the second current source and the DC voltmeter are grounded;

[0029] The two-dimensional Berry curvature ferroelectric layer adopts a two-dimensional layered material with a non-zero Berry curvature dipole moment and a vertical slip ferroelectric polarization, and the number of layers is an odd number, and the direction of the Berry curvature dipole moment is controlled by controlling the slip ferroelectric polarization direction of the two-dimensional Berry curvature ferroelectric layer with an odd number of layers;

[0030] 2) applying an in-plane current to the source and drain through a first current source, thereby applying an in-plane current to the two-dimensional Berry curvature ferroelectric layer, generating an out-of-plane orbital magnetic moment polarization under the combined action of the Berry curvature dipole moment of the two-dimensional Berry curvature ferroelectric layer and the in-plane current, that is, current-induced orbital flow, which can generate an orbital transfer torque, and the orbital transfer torque is related to the direction of the Berry curvature dipole moment and the direction of the in-plane current; the orbital transfer torque drives the free ferromagnetic layer located on the two-dimensional Berry curvature ferroelectric layer to undergo a vertical magnetization reversal, and the direction of the vertical magnetization reversal is related to the direction of the orbital transfer torque, thereby realizing current-driven vertical magnetization reversal; by controlling the direction of the in-plane current, the direction of the orbital magnetic moment polarization is controlled, thereby controlling the vertical magnetization reversal direction of the free ferromagnetic layer;

[0031] 3) At the same time, a bottom gate voltage is applied to the bottom gate through a DC power supply, thereby generating an electric displacement field perpendicular to the surface in the two-dimensional Berry curvature ferroelectric layer, generating a vertical slip ferroelectric polarization in the two-dimensional Berry curvature ferroelectric layer, and causing relative interlayer slip in the two-dimensional Berry curvature ferroelectric layer; the positive and negative changes in the bottom gate voltage change the direction of the interlayer relative slip in the two-dimensional Berry curvature ferroelectric layer, causing the direction of the Berry curvature dipole moment to change, thereby changing the direction of the orbital transfer torque, and causing the vertical magnetization reversal direction of the free ferromagnetic layer to change; by controlling the positive and negative of the bottom gate voltage applied to the two-dimensional Berry curvature ferroelectric layer, the direction of the slip ferroelectric polarization is controlled, and then the direction of the orbital transfer torque is controlled, thereby controlling the vertical magnetization reversal direction of the free ferromagnetic layer;

[0032] 4) The vertical magnetization direction of the fixed ferromagnetic layer is fixed; when the vertical magnetization directions of the fixed ferromagnetic layer and the free ferromagnetic layer are parallel, the tunneling resistance of the magnetic tunnel junction is in a low resistance state; when the vertical magnetization directions of the fixed ferromagnetic layer and the free ferromagnetic layer are antiparallel, the tunneling resistance of the magnetic tunnel junction is in a high resistance state;

[0033] A vertical current is applied to the top electrode through a second current source, the vertical current is much smaller than the in-plane current, and a tunnel resistance is obtained according to the voltage difference between the vertical current passing through the magnetic tunnel junction and the source and drain electrodes;

[0034] 5) The vertical magnetization reversal direction of the free ferromagnetic layer is related to the direction of the orbital transfer torque applied by the two-dimensional Berry curvature ferroelectric layer, the direction of the orbital transfer torque applied by the two-dimensional Berry curvature ferroelectric layer is related to the polarization direction of the orbital magnetic moment, the polarization direction of the orbital magnetic moment is closely related to the direction of the in-plane current and the direction of the Berry curvature dipole moment, the direction of the Berry curvature dipole moment is related to the direction of the slip ferroelectric polarization, and the direction of the slip ferroelectric polarization is controlled by the bottom gate voltage, so that the polarization direction of the orbital magnetic moment is controlled by setting the positive and negative in-plane current applied by the source and drain and the bottom gate voltage applied by the bottom gate, respectively, and the direction of the generated orbital transfer torque is controlled respectively; the bottom gate voltage applied by the bottom gate electrode is used as a logic input, and the positive voltage and the negative voltage are used as logic inputs "1" and "0" respectively; the in-plane current applied by the source and drain is used as another logic input, and the positive current and the negative current are used as logic inputs "1" and "0" respectively;

[0035] The tunneling resistance is related to the perpendicular magnetization direction of the free ferromagnetic layer. The tunneling resistance is used as the logic output, and the low resistance state and high resistance state are used to store and output the logic "0" and "1" respectively;

[0036] 6) By changing the bottom gate voltage and / or the in-plane current direction, the polarization direction of the orbital magnetic moment is changed, thereby controlling the vertical magnetization reversal of the free ferromagnetic layer, and realizing the in-memory logic by jointly controlling the tunneling resistance through the bottom gate voltage direction and the in-plane current direction.

[0037] The multi-ferroic in-memory logic device based on track transfer torque of the present invention is used as an XNOR in-memory logic device or an XOR in-memory logic device.

[0038] As an XNOR memory logic device: the vertical magnetization direction of the fixed ferromagnetic layer and the free ferromagnetic layer is initialized to vertical magnetization upward through an external magnetic field; a vertical electric displacement field is applied to the two-dimensional Berry curvature ferroelectric layer through a positive bottom gate voltage as a logic input "1", so that the two-dimensional Berry curvature ferroelectric layer undergoes positive vertical slip ferroelectric polarization, a positive in-plane current is applied to the two-dimensional Berry curvature ferroelectric layer through the source and drain as a logic input "1", and the generated orbital magnetic moment polarization realizes the vertical magnetization flip of the free ferromagnetic layer from top to bottom, the bottom gate voltage and the in-plane current are removed, the vertical magnetization directions of the free ferromagnetic layer and the fixed ferromagnetic layer are antiparallel, and a vertical current is applied through the top electrode to obtain a tunneling resistance of high resistance, and the logic input is obtained. Output "1", realize data "1" and "1" input, data "1" storage and output; apply a vertical electric displacement field to the two-dimensional Berry curvature ferroelectric layer through the bottom gate negative voltage as the logic input "0", so that the two-dimensional Berry curvature ferroelectric layer undergoes negative vertical slip ferroelectric polarization, and apply a positive in-plane current to the two-dimensional Berry curvature ferroelectric layer through the source and drain as the logic input "1", and the generated orbital magnetic moment polarization realizes the vertical magnetization flip of the free ferromagnetic layer from bottom to top, remove the bottom gate voltage and in-plane current, the vertical magnetization directions of the free ferromagnetic layer and the fixed ferromagnetic layer are parallel, and apply a vertical current through the top electrode to obtain a low resistance state of the tunneling resistance, and obtain a logic output "0", realize data "0" and "1" input, data " 0" storage and output; a vertical electric displacement field is applied to the two-dimensional Berry curvature ferroelectric layer through the bottom gate negative voltage as the logic input "0", so that the two-dimensional Berry curvature ferroelectric layer is negatively vertically ferroelectrically polarized, and a negative in-plane current is passed through the source and drain to the two-dimensional Berry curvature ferroelectric layer as the logic input "0". The generated orbital magnetic moment polarization realizes the vertical magnetization flip of the free ferromagnetic layer from top to bottom, removes the bottom gate voltage and the in-plane write current, and the vertical magnetization directions of the free ferromagnetic layer and the fixed ferromagnetic layer are antiparallel. A vertical current is applied through the top electrode to obtain a high resistance state of the tunneling resistance, and a logic output "1" is obtained, realizing data "0" and "0" input, data "1" storage and output; a positive bottom gate voltage is used as the logic input "1" applies a vertical electric displacement field to the two-dimensional Berry curvature ferroelectric layer, causing the two-dimensional Berry curvature ferroelectric layer to undergo positive vertical ferroelectric polarization. A negative in-plane current is passed through the source and drain electrodes to the two-dimensional Berry curvature ferroelectric layer as a logic input "0". The generated orbital current realizes the vertical magnetization reversal of the free ferromagnetic layer from bottom to top. The bottom gate voltage and the in-plane write current are removed, and the vertical magnetization directions of the free ferromagnetic layer and the fixed ferromagnetic layer are parallel. A vertical current is applied through the top electrode to obtain a low resistance state of the tunneling resistance, and a logic output "0" is obtained, realizing data "1" and "0" input, data "0" storage and output; a fully electrically controlled vertical magnetization reversal XNOR in-memory logic device is realized by ferroelectric modulation of the orbital transfer torque.

[0039] As an XOR in-memory logic device: the vertical magnetization direction of the fixed ferromagnetic layer and the free ferromagnetic layer is initialized to vertical magnetization downward through an external magnetic field; a vertical electric displacement field is applied to the two-dimensional Berry curvature ferroelectric layer through a positive bottom gate voltage as a logic input "1", so that the two-dimensional Berry curvature ferroelectric layer undergoes positive vertical slip ferroelectric polarization, and a negative in-plane current is applied to the two-dimensional Berry curvature ferroelectric layer through the source and drain as a logic input "0", and the generated orbital magnetic moment polarization realizes the vertical magnetization flip of the free ferromagnetic layer from bottom to top, and the bottom gate voltage and in-plane current are removed, and the vertical magnetization directions of the free ferromagnetic layer and the fixed ferromagnetic layer are antiparallel, and a vertical current is applied through the top electrode to obtain a high resistance state of the tunneling resistance, and the logic input is obtained. Output "1", realize data "1" and "0" input, data "1" storage and output; apply a vertical electric displacement field to the two-dimensional Berry curvature ferroelectric layer through the bottom gate negative voltage as the logic input "0", so that the two-dimensional Berry curvature ferroelectric layer has negative vertical slip ferroelectric polarization, and apply a negative in-plane current to the two-dimensional Berry curvature ferroelectric layer through the source and drain as the logic input "0". The generated orbital magnetic moment polarization realizes the vertical magnetization flip of the free ferromagnetic layer from top to bottom, removes the bottom gate voltage and the in-plane current, and the vertical magnetization directions of the free ferromagnetic layer and the fixed ferromagnetic layer are parallel. Apply a vertical current through the top electrode to obtain a low resistance state of the tunneling resistance, and obtain a logic output "0", realizing data "0" and "0" input, data " 0" storage and output; the bottom gate negative voltage is used as the logic input "0" to apply a vertical electric displacement field to the two-dimensional Berry curvature ferroelectric layer, so that the two-dimensional Berry curvature ferroelectric layer is negatively vertically ferroelectrically polarized, and the positive in-plane current is passed through the source and drain to the two-dimensional Berry curvature ferroelectric layer as the logic input "1". The generated orbital magnetic moment polarization realizes the vertical magnetization flip of the free ferromagnetic layer from bottom to top, removes the bottom gate voltage and the in-plane write current, and the vertical magnetization directions of the free ferromagnetic layer and the fixed ferromagnetic layer are antiparallel. The vertical current is applied through the top electrode to obtain the tunneling resistance in a high resistance state, and the logic output "1" is obtained, realizing data "0" and "1" input, data "1" storage and output; the bottom gate positive voltage is used as the logic input "1" applies a vertical electric displacement field to the two-dimensional Berry curvature ferroelectric layer, causing the two-dimensional Berry curvature ferroelectric layer to undergo positive vertical ferroelectric polarization. A positive in-plane current is passed through the source and drain electrodes to the two-dimensional Berry curvature ferroelectric layer as a logic input "1". The generated orbital current realizes the vertical magnetization reversal of the free ferromagnetic layer from top to bottom. The bottom gate voltage and the in-plane write current are removed, and the vertical magnetization directions of the free ferromagnetic layer and the fixed ferromagnetic layer are parallel. A vertical current is applied through the top electrode to obtain a low resistance state of the tunneling resistance, and a logic output "0" is obtained, realizing data "1" and "1" input, and data "0" storage and output; a fully electrically controlled vertical magnetization reversal XNOR in-memory logic device is realized by ferroelectric modulation of the orbital transfer torque.

[0040] Advantages of the present invention:

[0041] The present invention utilizes ferroelectric polarization and current to control the direction of the orbital transfer torque generated by orbital magnetization, thereby realizing fully electrically controlled vertical magnetization flipping and realizing a new generation of in-memory logic devices; different from the traditional MRAM in-memory logic, the in-memory logic operation can be realized in the same MRAM unit by adopting the gate voltage ferroelectric regulation and current input direction control method, avoiding the situation that a single logic gate requires multiple MRAMs in parallel, reducing hardware overhead and power consumption; the state control of MRAM is more accurate through the bottom gate voltage and in-plane current input, avoiding the situation of misjudgment, and improving the reliability and anti-interference of in-memory calculation; compared with the operation based entirely on current, the gate voltage ferroelectric modulation is a low-power consumption method, which helps to further improve the energy efficiency of the system; the multi-ferroic in-memory logic device of the orbital transfer torque provides an ideal technical route for the practical application of the in-memory logic device based on MRAM, and is expected to achieve large-scale commercial application. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Figure 1 A side view of an embodiment of a multiferroic memory logic device based on track transfer torque of the present invention;

[0043] Figure 2 A front view of an embodiment of a multi-ferroic memory logic device based on track transfer torque of the present invention;

[0044] Figure 3 A flow chart is prepared for an embodiment of a multiferroic memory logic device based on track transfer torque of the present invention, wherein (a) to (e) are schematic diagrams of each step respectively. DETAILED DESCRIPTION

[0045] The present invention will be further described below through specific embodiments in conjunction with the accompanying drawings.

[0046] like Figure 1As shown, the multi-ferroic memory logic device based on orbital transfer torque of this embodiment includes: a substrate, a bottom gate, a dielectric layer, a source, a drain, a top electrode, a two-dimensional Berry curvature ferroelectric layer, a free ferromagnetic layer, a tunneling layer, a fixed ferromagnetic layer and a packaging layer; wherein, an insulating layer is formed on the upper surface of the substrate; a bottom gate is formed on the insulating substrate; an insulating dielectric layer is formed on the bottom gate; a source, a drain and a top electrode are respectively formed on the dielectric layer; a two-dimensional Berry curvature ferroelectric layer is formed on the insulating dielectric layer and between the source and the drain, two ends of the two-dimensional Berry curvature ferroelectric layer are respectively in contact with the source and the drain, and the a-axis of the two-dimensional Berry curvature ferroelectric layer is parallel to the center line connecting the source and the drain, and the top electrode is in contact with the two-dimensional The Berry curvature ferroelectric layer has no contact; a free ferromagnetic layer and a tunneling layer are sequentially formed on the two-dimensional Berry curvature ferroelectric layer; a fixed ferromagnetic layer is formed on the tunneling layer, and the edge of the fixed ferromagnetic layer is in contact with the top electrode; the fixed ferromagnetic layer, the tunneling layer and the free ferromagnetic layer constitute a magnetic tunnel junction; a packaging layer is formed on the fixed ferromagnetic layer, the magnetic tunnel junction and the fixed ferromagnetic layer constitute a heterojunction, and the packaging layer completely covers the entire heterojunction; the bottom gate is connected to the positive pole of a DC voltage source, and the negative pole of the DC voltage source is grounded; the source is connected to the positive pole of a first current source, and the negative pole of the first current source is grounded; the drain is grounded; the top electrode is connected to the positive pole of a second current source and the positive pole of a DC voltmeter, and the negative poles of the second current source and the DC voltmeter are grounded.

[0047] In this embodiment, the substrate uses silicon with heavy electron doping as the lower layer, and the surface uses 285nm thick silicon dioxide SiO2; the source, drain and top electrodes use Ti / Au with a thickness of 2nm / 8nm; the bottom gate uses Ti / Au with a thickness of 5nm / 45nm; the dielectric layer, tunneling layer and encapsulation layer use insulating material h-BN with a thickness of 20 to 30nm; the two-dimensional Berry curvature ferroelectric layer uses three layers of NbIrTe4 (thickness 3nm); the free ferromagnetic layer with perpendicular magnetic anisotropy uses Fe3GeTe2 with a thickness of 6nm, and the fixed ferromagnetic layer uses Fe3GeTe2 with a thickness of 25nm.

[0048] The method for implementing a logic device in a multi-ferroic memory based on track transfer torque of this embodiment includes the following steps:

[0049] 1) Preparation of logic devices in multi-ferroic memory:

[0050] a) providing conductive silicon 1, forming insulating silicon dioxide 2 on the front side of the conductive silicon, and forming a substrate with an insulating upper surface;

[0051] b) forming a bottom gate 3 on the substrate using standard electron beam exposure and electron beam coating techniques;

[0052] c) forming a dielectric layer 4 on the bottom gate by chemical vapor deposition;

[0053] d) forming a mutually insulated source electrode 5, drain electrode 6 and top electrode 12 on the dielectric layer using standard electron beam exposure and electron beam coating techniques;

[0054] e) using chemical vapor deposition or chemical vapor transport growth methods to grow two-dimensional layered source material blocks with ferroelectricity and non-zero Berry curvature dipole moment, free ferromagnetic layer source material blocks with perpendicular magnetic anisotropy, and insulating material blocks; then mechanically stripping tape and polydimethylsiloxane 13 (Polydimethylsiloxane,

[0055] A mechanical stripping method assisted by PDMS is used to strip off two-dimensional layered source material blocks with ferroelectricity and non-zero Berry curvature dipole moment, free ferromagnetic layers with perpendicular magnetic anisotropy, and insulating material blocks, respectively, to obtain two-dimensional Berry curvature ferroelectric layers, free ferromagnetic layers with perpendicular magnetic anisotropy, and insulating thin layer materials, respectively. The specific method is to place the source material block to be stripped on one side of a mechanical stripping tape, and then use the other side of the mechanical stripping tape to stick to obtain a thin layer material, then stick the tape with the thin layer material on PDMS, tear off the tape to make the material adhere to PDMS, form a first transition insulating layer (silicon dioxide) on a first transition substrate (the material is silicon), form a second transition insulating layer on a second transition substrate, and form a third transition insulating layer on a third transition substrate, and then transfer the free ferromagnetic layer and insulating thin layer materials with ferroelectric Berry curvature and perpendicular magnetic anisotropy to the first transition insulating layer, the second transition insulating layer, and the third transition insulating layer, respectively. On the third transition insulating layer, a ferroelectric Berry curvature, a free ferromagnetic layer with perpendicular magnetic anisotropy and a thin insulating layer are formed respectively; a packaging layer 11, a fixed ferromagnetic layer 10 with perpendicular magnetic anisotropy, a tunneling layer 9, a free ferromagnetic layer 8 with perpendicular magnetic anisotropy and a two-dimensional Berry curvature ferroelectric layer 7 are sequentially bonded from the third transition insulating layer, the second transition insulating layer, the third transition insulating layer, the second transition insulating layer and the first transition insulating layer by a dry transfer method using a polycarbonate (PC) film 14 to form a heterojunction, and the heterojunction is transferred to the source 5 and the drain 6, the edges of the two-dimensional Berry curvature ferroelectric layer contact the source and the drain respectively, and the a-axis of the two-dimensional Berry curvature ferroelectric layer is parallel to the center line connecting the source and the drain, and the top electrode has no contact with the two-dimensional Berry curvature ferroelectric layer, the edge of the fixed ferromagnetic layer 10 with perpendicular magnetic anisotropy contacts the top electrode 12, and the packaging layer 11 completely covers the entire heterojunction to achieve packaging;

[0056] f) the bottom gate is connected to the positive electrode of a DC voltage source, the negative electrode of the DC voltage source is grounded; the source electrode is connected to the positive electrode of a first current source, the negative electrode of the first current source is grounded; the drain electrode is grounded; the top electrode is connected to the positive electrode of a second current source and the positive electrode of a DC voltmeter, the negative electrodes of the second current source and the DC voltmeter are grounded;

[0057] 2) applying an in-plane current (8 mA to 10 mA) to the source and drain through a first current source, thereby applying an in-plane current to the two-dimensional Berry curvature ferroelectric layer, generating an out-of-plane orbital magnetic moment polarization under the combined action of the Berry curvature dipole moment of the two-dimensional Berry curvature ferroelectric layer and the in-plane current, that is, current-induced orbital flow, which can generate an orbital transfer torque, and the orbital transfer torque is related to the direction of the Berry curvature dipole moment and the direction of the in-plane current; the orbital transfer torque drives the free ferromagnetic layer located on the two-dimensional Berry curvature ferroelectric layer to undergo a vertical magnetization reversal, and the direction of the vertical magnetization reversal is related to the direction of the orbital transfer torque, thereby realizing current-driven vertical magnetization reversal; by controlling the direction of the in-plane current, the direction of the orbital magnetic moment polarization is controlled, thereby controlling the vertical magnetization reversal direction of the free ferromagnetic layer;

[0058] 3) At the same time, a bottom gate voltage (-3V to -6V and 3V to 6V) is applied to the bottom gate through a DC power supply, thereby generating an electric displacement field perpendicular to the surface in the two-dimensional Berry curvature ferroelectric layer, generating a vertical slip ferroelectric polarization in the two-dimensional Berry curvature ferroelectric layer, and causing relative interlayer slip in the two-dimensional Berry curvature ferroelectric layer; the positive and negative changes in the bottom gate voltage change the direction of the interlayer relative slip in the two-dimensional Berry curvature ferroelectric layer, causing the direction of the Berry curvature dipole moment to change, thereby changing the direction of the orbital transfer torque, and causing the vertical magnetization reversal direction of the free ferromagnetic layer to change; by controlling the positive and negative of the bottom gate voltage applied to the two-dimensional Berry curvature ferroelectric layer, the direction of the slip ferroelectric polarization is controlled, and then the direction of the surface orbital transfer torque is controlled, thereby controlling the vertical magnetization reversal direction of the free ferromagnetic layer;

[0059] 4) The vertical magnetization direction of the fixed ferromagnetic layer is fixed, and the initialization direction is controlled by an external magnetic field; when the vertical magnetization directions of the fixed ferromagnetic layer and the free ferromagnetic layer are parallel, the tunneling resistance of the magnetic tunnel junction is in a low resistance state; when the vertical magnetization directions of the fixed ferromagnetic layer and the free ferromagnetic layer are antiparallel, the tunneling resistance of the magnetic tunnel junction is in a high resistance state;

[0060] A vertical current of 10 μA is applied to the top electrode through a second current source. The vertical current is much smaller than the in-plane current. The tunnel resistance is obtained according to the voltage difference from the vertical current passing through the magnetic tunnel junction to the source and drain.

[0061] 5) The vertical magnetization reversal direction of the free ferromagnetic layer is related to the direction of the orbital transfer torque applied by the two-dimensional Berry curvature ferroelectric layer, the direction of the orbital transfer torque applied by the two-dimensional Berry curvature ferroelectric layer is related to the polarization direction of the orbital magnetic moment, the polarization direction of the orbital magnetic moment is closely related to the direction of the in-plane current and the direction of the Berry curvature dipole moment, the direction of the Berry curvature dipole moment is related to the direction of the slip ferroelectric polarization, and the direction of the slip ferroelectric polarization is controlled by the bottom gate voltage, so that the polarization direction of the orbital magnetic moment is controlled by setting the positive and negative in-plane current applied by the source and drain and the bottom gate voltage applied by the bottom gate, respectively, and the direction of the generated orbital transfer torque is controlled respectively; the bottom gate voltage applied by the bottom gate is used as a logic input, and the positive voltage and the negative voltage are used as logic inputs "1" and "0" respectively; the in-plane current applied by the source and drain is used as another logic input, and the positive current and the negative current are used as logic inputs "1" and "0" respectively;

[0062] The tunneling resistance is related to the perpendicular magnetization direction of the free ferromagnetic layer. The tunneling resistance is used as the logic output, and the low resistance state and high resistance state are used to store and output the logic "0" and "1" respectively;

[0063] 6) By changing the bottom gate voltage and / or the in-plane current direction, the polarization direction of the orbital magnetic moment is changed, thereby controlling the vertical magnetization reversal of the free ferromagnetic layer, and realizing the in-memory logic by jointly controlling the tunneling resistance through the bottom gate voltage direction and the in-plane current direction.

[0064] Finally, it should be noted that the purpose of publishing the embodiments is to help further understand the present invention, but those skilled in the art can understand that various substitutions and modifications are possible without departing from the spirit and scope of the present invention and the appended claims. Therefore, the present invention should not be limited to the contents disclosed in the embodiments, and the scope of protection claimed by the present invention shall be subject to the scope defined in the claims.

Claims

1. A multiferroic memory logic device based on track transfer torque, characterized in that: The multi-ferroic memory logic device includes: a substrate, a bottom gate, a dielectric layer, a source, a drain, a top electrode, a two-dimensional Berry curvature ferroelectric layer, a free ferromagnetic layer, a tunneling layer, a fixed ferromagnetic layer and a packaging layer; wherein, an upper surface insulating layer is formed on the substrate; a bottom gate is formed on the insulating substrate; an insulating dielectric layer is formed on the bottom gate; a source, a drain and a top electrode are respectively formed on the dielectric layer; a two-dimensional Berry curvature ferroelectric layer is formed on the insulating dielectric layer and between the source and the drain, the two ends of the two-dimensional Berry curvature ferroelectric layer are respectively in contact with the source and the drain, the a-axis of the two-dimensional Berry curvature ferroelectric layer is parallel to the center line connecting the source and the drain, and the top electrode has no contact with the two-dimensional Berry curvature ferroelectric layer ; A free ferromagnetic layer and a tunneling layer are sequentially formed on the two-dimensional Berry curvature ferroelectric layer; a fixed ferromagnetic layer is formed on the tunneling layer, and the edge of the fixed ferromagnetic layer is in contact with the top electrode; the fixed ferromagnetic layer, the tunneling layer and the free ferromagnetic layer constitute a magnetic tunnel junction; the two-dimensional Berry curvature ferroelectric layer and the magnetic tunnel junction layer constitute a heterojunction; an encapsulation layer is formed on the fixed ferromagnetic layer, and the encapsulation layer completely covers the entire heterojunction; the bottom gate is connected to the positive pole of a DC voltage source, and the negative pole of the DC voltage source is grounded; the source is connected to the positive pole of a first current source, and the negative pole of the first current source is grounded; the drain is grounded; the top electrode is connected to the positive pole of a second current source and the positive pole of a DC voltmeter, and the negative poles of the second current source and the DC voltmeter are grounded; The two-dimensional Berry curvature ferroelectric layer adopts a two-dimensional layered material with a non-zero Berry curvature dipole moment and a vertical slip ferroelectric polarization, and the number of layers is an odd number, and the direction of the Berry curvature dipole moment is controlled by controlling the slip ferroelectric polarization direction of the two-dimensional Berry curvature ferroelectric layer with an odd number of layers; An in-plane current is applied to the source and drain through a first current source, thereby applying an in-plane current to the two-dimensional Berry curvature ferroelectric layer, and an out-of-plane orbital magnetic moment polarization is generated under the joint action of the Berry curvature dipole moment of the two-dimensional Berry curvature ferroelectric layer and the in-plane current, that is, the current induces the orbital flow, which can generate an orbital transfer torque, and the direction of the orbital transfer torque is related to the direction of the Berry curvature dipole moment and the direction of the in-plane current; the orbital transfer torque drives the free ferromagnetic layer located on the two-dimensional Berry curvature ferroelectric layer to undergo a vertical magnetization reversal, and the direction of the vertical magnetization reversal is related to the direction of the orbital transfer torque, thereby realizing current-driven vertical magnetization reversal; by controlling the direction of the in-plane current, the direction of the orbital magnetic moment polarization is controlled, thereby controlling the vertical magnetization reversal direction of the free ferromagnetic layer; At the same time, a bottom gate voltage is applied to the bottom gate through a direct current power supply, thereby generating an electric displacement field perpendicular to the surface in the two-dimensional Berry curvature ferroelectric layer, generating a vertical slip ferroelectric polarization in the two-dimensional Berry curvature ferroelectric layer, and causing relative interlayer slip in the two-dimensional Berry curvature ferroelectric layer; the positive and negative changes in the bottom gate voltage change the direction of the interlayer relative slip in the two-dimensional Berry curvature ferroelectric layer, causing the direction of the Berry curvature dipole moment to change, thereby changing the direction of the orbital transfer torque, and causing the vertical magnetization reversal direction of the free ferromagnetic layer to change; by controlling the positive and negative of the bottom gate voltage applied to the two-dimensional Berry curvature ferroelectric layer, the direction of the slip ferroelectric polarization is controlled, and then the direction of the orbital transfer torque is controlled, thereby controlling the vertical magnetization reversal direction of the free ferromagnetic layer; The vertical magnetization direction of the fixed ferromagnetic layer is fixed; when the vertical magnetization directions of the fixed ferromagnetic layer and the free ferromagnetic layer are parallel, the tunneling resistance of the magnetic tunnel junction is in a low resistance state; when the vertical magnetization directions of the fixed ferromagnetic layer and the free ferromagnetic layer are antiparallel, the tunneling resistance of the magnetic tunnel junction is in a high resistance state; A vertical current is applied to the top electrode through a second current source, the vertical current is much smaller than the in-plane current, and a tunnel resistance is obtained according to the voltage difference between the vertical current passing through the magnetic tunnel junction and the source and drain electrodes; The vertical magnetization reversal direction of the free ferromagnetic layer is related to the direction of the orbital transfer torque applied by the two-dimensional Berry curvature ferroelectric layer, the direction of the orbital transfer torque applied by the two-dimensional Berry curvature ferroelectric layer is related to the polarization direction of the orbital magnetic moment, the polarization direction of the orbital magnetic moment is closely related to the direction of the in-plane current and the direction of the Berry curvature dipole moment, the direction of the Berry curvature dipole moment is related to the direction of the slip ferroelectric polarization, and the direction of the slip ferroelectric polarization is controlled by the bottom gate voltage, so that the polarization direction of the orbital magnetic moment is controlled by setting the positive and negative in-plane current applied by the source and drain and the bottom gate voltage applied by the bottom gate, respectively, and the direction of the generated orbital transfer torque is controlled respectively; the bottom gate voltage applied by the bottom gate is used as a logic input, and the positive voltage and the negative voltage are used as logic inputs "1" and "0" respectively; the in-plane current applied by the source and drain is used as another logic input, and the positive current and the negative current are used as logic inputs "1" and "0" respectively; The tunnel resistance is related to the perpendicular magnetization direction of the free ferromagnetic layer. The tunnel resistance is used as the logic output, and the low resistance state and high resistance state are used to store and output the logic "0" and "1" respectively; By changing the bottom gate voltage and / or the in-plane current direction, the polarization direction of the orbital magnetic moment is changed, thereby controlling the vertical magnetization reversal of the free ferromagnetic layer, and realizing the in-memory logic by jointly controlling the tunneling resistance through the bottom gate voltage direction and the in-plane current direction.

2. The multi-ferroic memory logic device according to claim 1, characterized in that: The dielectric layer is made of insulating material.

3. The multi-ferroic memory logic device according to claim 1, characterized in that: The two-dimensional Berry curvature ferroelectric layer adopts an odd number of layers of two-dimensional material and has a thickness of 3nm to 10nm.

4. The multi-ferroic memory logic device according to claim 1, characterized in that: The tunneling layer is made of insulating material and has a thickness of 0.5nm to 2nm.

5. The multi-ferroic memory logic device according to claim 1, characterized in that: The fixed ferromagnetic layer is made of a thin layer material with perpendicular magnetic anisotropy and has a thickness of 20nm to 30nm.

6. The multi-ferroic memory logic device according to claim 1, characterized in that: The free ferromagnetic layer is made of a thin layer material with perpendicular magnetic anisotropy and has a thickness of 5nm to 15nm.

7. The multi-ferroic memory logic device according to claim 1, characterized in that: The encapsulation layer is made of insulating material and has a thickness of 5nm to 20nm.

8. A method for realizing a logic device in a multiferroic memory based on track transfer torque as claimed in claim 1, characterized in that: The implementation method comprises the following steps: 1) Preparation of logic devices in multi-ferroic memory: a) forming an upper surface insulating layer on a substrate; forming a bottom gate on the insulating substrate; forming an insulating dielectric layer on the bottom gate; forming a source, a drain and a top electrode on the dielectric layer respectively; forming a two-dimensional Berry curvature ferroelectric layer on the insulating dielectric layer and between the source and the drain, wherein two ends of the two-dimensional Berry curvature ferroelectric layer contact the source and the drain respectively, the a-axis of the two-dimensional Berry curvature ferroelectric layer is parallel to the center line connecting the source and the drain, and the top electrode has no contact with the two-dimensional Berry curvature ferroelectric layer; forming a free ferromagnetic layer and a tunneling layer on the two-dimensional Berry curvature ferroelectric layer in sequence; forming a fixed ferromagnetic layer on the tunneling layer, wherein the edge of the fixed ferromagnetic layer contacts the top electrode; the fixed ferromagnetic layer, the tunneling layer and the free ferromagnetic layer constitute a magnetic tunnel junction; the two-dimensional Berry curvature ferroelectric layer and the magnetic tunnel junction layer constitute a heterojunction; forming an encapsulation layer on the fixed ferromagnetic layer, wherein the encapsulation layer completely covers the entire heterojunction; b) the bottom gate is connected to the positive electrode of a DC voltage source, the negative electrode of the DC voltage source is grounded; the source electrode is connected to the positive electrode of a first current source, the negative electrode of the first current source is grounded; the drain electrode is grounded; the top electrode is connected to the positive electrode of a second current source and the positive electrode of a DC voltmeter, the negative electrodes of the second current source and the DC voltmeter are grounded; The two-dimensional Berry curvature ferroelectric layer adopts a two-dimensional layered material with a non-zero Berry curvature dipole moment and a vertical slip ferroelectric polarization, and the number of layers is an odd number, and the direction of the Berry curvature dipole moment is controlled by controlling the slip ferroelectric polarization direction of the two-dimensional Berry curvature ferroelectric layer with an odd number of layers; 2) applying an in-plane current to the source and drain through a first current source, thereby applying an in-plane current to the two-dimensional Berry curvature ferroelectric layer, generating an out-of-plane orbital magnetic moment polarization under the combined action of the Berry curvature dipole moment of the two-dimensional Berry curvature ferroelectric layer and the in-plane current, that is, current-induced orbital flow, which can generate an orbital transfer torque, and the orbital transfer torque is related to the direction of the Berry curvature dipole moment and the direction of the in-plane current; the orbital transfer torque drives the free ferromagnetic layer located on the two-dimensional Berry curvature ferroelectric layer to undergo a vertical magnetization reversal, and the direction of the vertical magnetization reversal is related to the direction of the orbital transfer torque, thereby realizing current-driven vertical magnetization reversal; by controlling the direction of the in-plane current, the direction of the orbital magnetic moment polarization is controlled, thereby controlling the vertical magnetization reversal direction of the free ferromagnetic layer; 3) At the same time, a bottom gate voltage is applied to the bottom gate through a DC power supply, thereby generating an electric displacement field perpendicular to the surface in the two-dimensional Berry curvature ferroelectric layer, generating a vertical slip ferroelectric polarization in the two-dimensional Berry curvature ferroelectric layer, and causing relative interlayer slip in the two-dimensional Berry curvature ferroelectric layer; the positive and negative changes in the bottom gate voltage change the direction of the interlayer relative slip in the two-dimensional Berry curvature ferroelectric layer, causing the direction of the Berry curvature dipole moment to change, thereby changing the direction of the orbital transfer torque, and causing the vertical magnetization reversal direction of the free ferromagnetic layer to change; by controlling the positive and negative of the bottom gate voltage applied to the two-dimensional Berry curvature ferroelectric layer, the direction of the slip ferroelectric polarization is controlled, and then the direction of the orbital transfer torque is controlled, thereby controlling the vertical magnetization reversal direction of the free ferromagnetic layer; 4) The vertical magnetization direction of the fixed ferromagnetic layer is fixed; when the vertical magnetization directions of the fixed ferromagnetic layer and the free ferromagnetic layer are parallel, the tunneling resistance of the magnetic tunnel junction is in a low resistance state; when the vertical magnetization directions of the fixed ferromagnetic layer and the free ferromagnetic layer are antiparallel, The tunneling resistance of the magnetic tunnel junction is in a high resistance state; A vertical current is applied to the top electrode through a second current source, the vertical current is much smaller than the in-plane current, and a tunnel resistance is obtained according to the voltage difference between the vertical current passing through the magnetic tunnel junction and the source and drain electrodes; 5) The vertical magnetization reversal direction of the free ferromagnetic layer is related to the direction of the orbital transfer torque applied by the two-dimensional Berry curvature ferroelectric layer, the direction of the orbital transfer torque applied by the two-dimensional Berry curvature ferroelectric layer is related to the polarization direction of the orbital magnetic moment, the polarization direction of the orbital magnetic moment is closely related to the direction of the in-plane current and the direction of the Berry curvature dipole moment, the direction of the Berry curvature dipole moment is related to the direction of the slip ferroelectric polarization, and the direction of the slip ferroelectric polarization is controlled by the bottom gate voltage, so that the polarization direction of the orbital magnetic moment is controlled by setting the positive and negative in-plane current applied by the source and drain and the bottom gate voltage applied by the bottom gate, respectively, and the direction of the generated orbital transfer torque is controlled respectively; the bottom gate voltage applied by the bottom gate electrode is used as a logic input, The positive voltage and negative voltage are used as logic inputs "1" and "0" respectively; the in-plane current applied by the source and drain is used as another logic input, and the positive current and negative current are used as logic inputs "1" and "0" respectively; The tunnel resistance is related to the perpendicular magnetization direction of the free ferromagnetic layer. The tunnel resistance is used as the logic output, and the low resistance state and high resistance state are used to store and output the logic "0" and "1" respectively; 6) By changing the bottom gate voltage and / or the in-plane current direction, the polarization direction of the orbital magnetic moment is changed, thereby controlling the vertical magnetization reversal of the free ferromagnetic layer, and realizing the in-memory logic by jointly controlling the tunneling resistance through the bottom gate voltage direction and the in-plane current direction.

9. The implementation method according to claim 8, characterized in that: As an XNOR memory logic device: the vertical magnetization direction of the fixed ferromagnetic layer and the free ferromagnetic layer is initialized to vertical magnetization upward through an external magnetic field; a vertical electric displacement field is applied to the two-dimensional Berry curvature ferroelectric layer through a positive bottom gate voltage as a logic input "1", so that the two-dimensional Berry curvature ferroelectric layer undergoes a positive vertical slip ferroelectric polarization, a positive in-plane current is applied to the two-dimensional Berry curvature ferroelectric layer through the source and drain as a logic input "1", and the generated orbital magnetic moment polarization realizes the vertical magnetization flip of the free ferromagnetic layer from top to bottom, the bottom gate voltage and the in-plane current are removed, the vertical magnetization directions of the free ferromagnetic layer and the fixed ferromagnetic layer are antiparallel, and a vertical current is applied through the top electrode to obtain a tunneling resistance of high resistance, and the logic input is obtained. Output "1", realize data "1" and "1" input, data "1" storage and output; apply vertical electric displacement field to the two-dimensional Berry curvature ferroelectric layer through the bottom gate negative voltage as logic input "0", so that the two-dimensional Berry curvature ferroelectric layer has negative vertical slip ferroelectric polarization, apply positive in-plane current to the two-dimensional Berry curvature ferroelectric layer through the source and drain as logic input "1", and the generated orbital magnetic moment polarization realizes the vertical magnetization flip of the free ferromagnetic layer from bottom to top, remove the bottom gate voltage and in-plane current, the vertical magnetization directions of the free ferromagnetic layer and the fixed ferromagnetic layer are parallel, and apply vertical current through the top electrode to obtain the tunneling resistance in a low resistance state, and obtain the logic output "0", realize data "0" and "1" input, data" 0” storage and output; the bottom gate negative voltage is used as the logic input "0" to apply a vertical electric displacement field to the two-dimensional Berry curvature ferroelectric layer, so that the two-dimensional Berry curvature ferroelectric layer is negatively vertically ferroelectrically polarized, and the negative in-plane current is passed through the source and drain to the two-dimensional Berry curvature ferroelectric layer as the logic input "0", and the generated orbital magnetic moment polarization realizes the vertical magnetization flip of the free ferromagnetic layer from top to bottom, removes the bottom gate voltage and the in-plane write current, and the vertical magnetization directions of the free ferromagnetic layer and the fixed ferromagnetic layer are antiparallel. The vertical current is applied through the top electrode to obtain the tunneling resistance in a high resistance state, and the logic output "1" is obtained, realizing data "0" and "0" input, data "1" storage and output; the bottom gate positive voltage is used as the logic input "1" applies a vertical electric displacement field to the two-dimensional Berry curvature ferroelectric layer, causing the two-dimensional Berry curvature ferroelectric layer to undergo positive vertical ferroelectric polarization, and a negative in-plane current is passed through the source and drain electrodes to the two-dimensional Berry curvature ferroelectric layer as a logic input "0". The generated orbital current realizes the vertical magnetization reversal of the free ferromagnetic layer from bottom to top, removes the bottom gate voltage and the in-plane write current, and the vertical magnetization directions of the free ferromagnetic layer and the fixed ferromagnetic layer are parallel. A vertical current is applied through the top electrode to obtain a low resistance state of the tunneling resistance, and a logic output "0" is obtained, realizing data "1" and "0" input, data "0" storage and output; a fully electrically controlled vertical magnetization reversal XNOR in-memory logic device is realized by ferroelectric modulation of the orbital transfer torque.

10. The implementation method according to claim 8, characterized in that: As an XOR in-memory logic device: the vertical magnetization direction of the fixed ferromagnetic layer and the free ferromagnetic layer is initialized to vertical magnetization downward through an external magnetic field; a vertical electric displacement field is applied to the two-dimensional Berry curvature ferroelectric layer through a positive bottom gate voltage as a logic input "1", so that the two-dimensional Berry curvature ferroelectric layer undergoes positive vertical slip ferroelectric polarization, and a negative in-plane current is applied to the two-dimensional Berry curvature ferroelectric layer through the source and drain as a logic input "0", and the generated orbital magnetic moment polarization realizes the vertical magnetization flip of the free ferromagnetic layer from bottom to top, and the bottom gate voltage and in-plane current are removed, and the vertical magnetization directions of the free ferromagnetic layer and the fixed ferromagnetic layer are antiparallel, and a vertical current is applied through the top electrode to obtain a high resistance state of the tunneling resistance, and the logic input is obtained. Output "1", realize data "1" and "0" input, data "1" storage and output; apply vertical electric displacement field to the two-dimensional Berry curvature ferroelectric layer through the bottom gate negative voltage as logic input "0", so that the two-dimensional Berry curvature ferroelectric layer has negative vertical slip ferroelectric polarization, and apply negative in-plane current to the two-dimensional Berry curvature ferroelectric layer through the source and drain as logic input "0", and the generated orbital magnetic moment polarization realizes the vertical magnetization flip of the free ferromagnetic layer from top to bottom, removes the bottom gate voltage and in-plane current, and the vertical magnetization directions of the free ferromagnetic layer and the fixed ferromagnetic layer are parallel. Apply vertical current through the top electrode to obtain the tunneling resistance in a low resistance state, and obtain logic output "0", realize data "0" and "0" input, data " 0” storage and output; the bottom gate negative voltage is used as the logic input "0" to apply a vertical electric displacement field to the two-dimensional Berry curvature ferroelectric layer, so that the two-dimensional Berry curvature ferroelectric layer is negatively vertically ferroelectrically polarized, and the positive in-plane current is passed through the source and drain to the two-dimensional Berry curvature ferroelectric layer as the logic input "1", and the generated orbital magnetic moment polarization realizes the vertical magnetization flip of the free ferromagnetic layer from bottom to top, removes the bottom gate voltage and the in-plane write current, and the vertical magnetization directions of the free ferromagnetic layer and the fixed ferromagnetic layer are antiparallel. The vertical current is applied through the top electrode to obtain the tunneling resistance in a high resistance state, and the logic output "1" is obtained to realize the input of data "0" and "1", and the storage and output of data "1"; the bottom gate positive voltage is used as the logic input "1" is applied to the two-dimensional Berry curvature ferroelectric layer, so that the two-dimensional Berry curvature ferroelectric layer undergoes positive vertical ferroelectric polarization. A positive in-plane current is passed through the source and drain electrodes to the two-dimensional Berry curvature ferroelectric layer as a logic input "1". The generated orbital current realizes the vertical magnetization reversal of the free ferromagnetic layer from top to bottom. The bottom gate voltage and the in-plane write current are removed. The vertical magnetization directions of the free ferromagnetic layer and the fixed ferromagnetic layer are parallel. A vertical current is applied through the top electrode to obtain a low resistance state of the tunneling resistance, and a logic output "0" is obtained, realizing data "1" and "1" input, data "0" storage and output; a fully electrically controlled vertical magnetization reversal XNOR in-memory logic device is realized by ferroelectric modulation of the orbital transfer torque.

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