GaN / InP multi-channel heterojunction device based on diamond substrate and preparation method of GaN / InP multi-channel heterojunction device

Abstract

The invention discloses a GaN / InP multi-channel heterojunction device based on a diamond substrate and a preparation method thereof.The device comprises the diamond substrate, a boron nitride insertion layer, a GaN nucleating layer and a GaN buffer layer which are sequentially arranged from bottom to top, and the upper surface of the GaN buffer layer is provided with a multi-layer laminated structure; each laminated structure comprises an n-type InP channel layer and a GaN barrier layer arranged on the upper surface of the n-type InP channel layer; a source electrode and a drain electrode are respectively formed on two sides of the upper surface of the laminated structure; and a dielectric layer and a grid electrode are sequentially arranged on the upper surface of the laminated structure between the source electrode and the drain electrode. The multi-channel heterojunction structure is formed by using the diamond material as the substrate and combining the characteristic of high electron mobility of the InP material, so that the problem of hot stacking can be relieved, the carrier mobility can be remarkably improved, and the high power, high-frequency performance and reliability of the device can be comprehensively improved.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductors, and in particular relates to a GaN / InP multi-channel heterojunction device based on a diamond substrate and a preparation method thereof. Background Art

[0002] As a third-generation semiconductor material, GaN has become an important material in the field of high-frequency and high-power electronic devices due to its excellent properties such as large bandgap, high electron mobility and high breakdown electric field, especially showing excellent performance in extreme environments such as high temperature and strong radiation. Compared with traditional silicon-based semiconductors, GaN has stronger performance stability at high temperatures, can withstand higher junction temperatures, and maintain efficient switching performance and low power consumption, making it have broad application prospects in aerospace, electric vehicle power electronics and other fields.

[0003] In the process of improving the performance of GaN devices, an important direction in the design is to increase the number of carriers through a multi-channel structure to significantly improve the current density and driving capability of the device. However, as the current density of the device increases, the carrier mobility of the GaN material will decrease significantly due to the increase in temperature, resulting in limited high-frequency characteristics and overall performance of the device. This phenomenon is mainly attributed to the lower thermal conductivity of GaN (~130W / m·K), coupled with the lower thermal conductivity of the traditional sapphire substrate (~25W / m·K), which makes it difficult for the heat generated during the operation of the device to be effectively dissipated, forming a significant thermal accumulation effect. The thermal accumulation effect increases the junction temperature, further reduces the carrier mobility, and has an adverse effect on the reliability of the device, ultimately limiting the performance of GaN-based high-current devices in high-frequency and high-power applications.

[0004] Traditional GaN devices usually use sapphire or SiC as substrate materials. These materials have low thermal conductivity, which makes it difficult to quickly remove the heat generated during the operation of the device, resulting in a heat accumulation effect. The increase in junction temperature further reduces the carrier mobility, seriously affecting the high-frequency characteristics and reliability of the device. In addition, as the current density of the device increases, the carrier mobility of the GaN material decreases significantly, limiting the driving capability and switching characteristics of the device, and restricting its application in high-power, high-frequency scenarios. Summary of the invention

[0005] In order to solve the above problems existing in the prior art, the present invention provides a GaN / InP multi-channel heterojunction device based on a diamond substrate and a preparation method. The technical problem to be solved by the present invention is achieved by the following technical solutions:

[0006] One aspect of the present invention provides a GaN / InP multi-channel heterojunction device based on a diamond substrate, comprising a diamond substrate, a boron nitride insertion layer, a GaN nucleation layer and a GaN buffer layer arranged in sequence from bottom to top, wherein:

[0007] A multi-layer stacked structure is arranged on the upper surface of the GaN buffer layer, each stacked structure includes an n-type InP channel layer and a GaN barrier layer arranged on the upper surface of the n-type InP channel layer;

[0008] A source electrode and a drain electrode are formed on both sides of the upper surface of the stacked structure respectively; a dielectric layer and a gate electrode are sequentially arranged on the upper surface of the stacked structure between the source electrode and the drain electrode.

[0009] In one embodiment of the present invention, the thickness of the diamond substrate is 300-500 μm, the thickness of the boron nitride insertion layer is 1-3 nm, the thickness of the GaN nucleation layer is 20-50 nm, and the thickness of the GaN buffer layer is 1-3 μm.

[0010] In one embodiment of the present invention, the number of the stacked structures is 3-5.

[0011] In one embodiment of the present invention, the thickness of the n-type InP channel layer in each stacked structure is 10-20 nm, and the thickness of the GaN barrier layer is 15-25 nm.

[0012] In one embodiment of the present invention, the doping element in the n-type InP channel layer is Si, and the doping concentration is 3×10 18 cm -3 .

[0013] In one embodiment of the present invention, the source electrode, the drain electrode and the gate electrode are all laminated metals of Ni with a thickness of 20 to 40 nm and Au with a thickness of 80 to 150 nm.

[0014] In one embodiment of the present invention, the material of the dielectric layer is Al2O3, and the thickness is 10-20 nm.

[0015] Another aspect of the present invention provides a method for preparing a GaN / InP multi-channel heterojunction device based on a diamond substrate, which is used to prepare the GaN / InP multi-channel heterojunction device described in any one of the above embodiments, and the preparation method comprises:

[0016] S1: selecting a diamond substrate, and growing a boron nitride insertion layer on the diamond substrate;

[0017] S2: sequentially growing a GaN nucleation layer and a GaN buffer layer on the boron nitride insertion layer;

[0018] S3: sequentially growing a multilayer stacked structure on the upper surface of the GaN buffer layer, wherein each stacked structure includes an n-type InP channel layer and a GaN barrier layer disposed on the upper surface of the n-type InP channel layer;

[0019] S4: depositing metals on both sides of the upper surface of the stacked structure to form a source electrode and a drain electrode;

[0020] S5: growing a dielectric layer and a gate in sequence on the upper surface of the stacked structure between the source and the drain.

[0021] In one embodiment of the present invention, the S1 includes:

[0022] A diamond substrate with a thickness of 300 to 500 μm is selected, and the diamond substrate is placed in an acetone solution and cleaned in an ultrasonic cleaning tank for 10 to 15 minutes; the cleaned diamond substrate is taken out and cleaned with anhydrous ethanol and then blown dry;

[0023] A boron nitride film is grown on a metal catalyst, and then the boron nitride film grown on the metal catalyst is moved to the surface of an auxiliary organic material through a transfer process, and the boron nitride film on the surface of the auxiliary organic material is pasted onto a blow-dried diamond substrate, and the auxiliary organic material is dissolved by an organic solvent to form a boron nitride insertion layer with a thickness of 1 to 3 nm on the diamond substrate.

[0024] In one embodiment of the present invention, S3 includes:

[0025] Growing an n-type InP channel layer on the upper surface of the GaN buffer layer by using a MOCVD growth process, and then growing a GaN barrier layer on the upper surface of the n-type InP channel layer by using a MOCVD growth process to form a stacked structure of the n-type InP channel layer and the GaN barrier layer;

[0026] Continue to grow 3 to 5 stacked structures of n-type InP channel layers and GaN barrier layers on the current stacked structure, the thickness of the n-type InP channel layer in each stacked structure is 10 to 20 nm, and the thickness of the GaN barrier layer is 15 to 25 nm.

[0027] Compared with the prior art, the present invention has the following beneficial effects:

[0028] 1. The present invention proposes a GaN / InP multi-channel heterojunction device based on a diamond substrate, which is used to solve the heat dissipation and performance problems of GaN-based high-current power devices in high-power and high-frequency applications. The carrier mobility of GaN materials at high current density decreases significantly. At the same time, due to its low thermal conductivity, the heat generated during operation is difficult to be discharged in time, resulting in an aggravated thermal accumulation effect and an increase in the junction temperature of the device. This effect not only reduces the carrier mobility, but also has an adverse effect on the high-frequency characteristics and reliability of the device. The present invention introduces diamond material as a substrate and utilizes its excellent thermal conductivity to significantly improve the heat dissipation capacity of the device, thereby effectively reducing the junction temperature. In addition, combined with the characteristics of high electron mobility of InP materials, a multi-channel heterojunction structure is formed to achieve the performance advantages of the device under high-frequency and high-current conditions. The GaN / InP multi-channel heterojunction device based on a diamond substrate of the present invention can not only alleviate the problem of thermal accumulation, but also significantly improve the carrier mobility, and comprehensively improve the high-power, high-frequency performance and reliability of the device.

[0029] 2. The present invention integrates the high-efficiency heat dissipation performance of the diamond substrate, the voltage resistance advantage of the GaN material, the high electron mobility of the InP material, and the high current density brought by the multi-channel structure, which can comprehensively improve the performance and reliability of the device and realize the preparation of high-speed and high-current devices with strong heat dissipation capability.

[0030] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 It is a schematic structural diagram of a GaN / InP multi-channel heterojunction device based on a diamond substrate provided by an embodiment of the present invention;

[0032] Figure 2 It is a schematic diagram of a specific structure of a GaN / InP multi-channel heterojunction device based on a diamond substrate provided by an embodiment of the present invention;

[0033] Figures 3a to 3e It is a schematic diagram of a preparation process of a GaN / InP multi-channel heterojunction device based on a diamond substrate provided by an embodiment of the present invention.

[0034] Description of reference numerals:

[0035] 1-diamond substrate; 2-boron nitride insertion layer; 3-GaN nucleation layer; 4-GaN buffer layer; 5-n-type InP channel layer; 6-GaN barrier layer; 7-source; 8-drain; 9-dielectric layer; 10-gate. DETAILED DESCRIPTION

[0036] In order to further explain the technical means and effects adopted by the present invention to achieve the predetermined invention purpose, the following is a detailed description of a GaN / InP multi-channel heterojunction device based on a diamond substrate and a preparation method proposed by the present invention in combination with the accompanying drawings and specific implementation methods.

[0037] The above and other technical contents, features and effects of the present invention are clearly presented in the following detailed description of the specific implementation modes in conjunction with the accompanying drawings. Through the description of the specific implementation modes, the technical means and effects adopted by the present invention to achieve the predetermined purpose can be more deeply and specifically understood. However, the attached drawings are only for reference and explanation purposes and are not used to limit the technical solutions of the present invention.

[0038] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants are intended to cover non-exclusive inclusion, so that an article or device including a series of elements includes not only those elements, but also other elements that are not explicitly listed. In the absence of more restrictions, the elements defined by the statement "including one..." do not exclude the existence of other identical elements in the article or device including the elements.

[0039] Embodiment 1

[0040] See also Figure 1 , Figure 1 It is a schematic diagram of the structure of a GaN / InP multi-channel heterojunction device based on a diamond substrate provided by an embodiment of the present invention. The GaN / InP multi-channel heterojunction device includes a diamond substrate 1, a boron nitride insertion layer 2, a GaN nucleation layer 3 and a GaN buffer layer 4 arranged in sequence from bottom to top, wherein a multi-layer stacking structure is arranged on the upper surface of the GaN buffer layer 4, and the number of stacking structures is 3 to 5, each stacking structure includes an n-type InP channel layer 5 and a GaN barrier layer 6 arranged on the upper surface of the n-type InP channel layer 5, and the stacking structure of the n-type InP channel layer 5 and the GaN barrier layer 6 forms a multi-channel structure; a source 7 and a drain 8 are formed on both sides of the upper surface of the stacking structure; a dielectric layer 9 and a gate 10 are arranged in sequence on the upper surface of the stacking structure between the source 7 and the drain 8.

[0041] In this embodiment, the thickness of the diamond substrate 1 is 300-500 μm, the thickness of the boron nitride insertion layer 2 is 1-3 nm, the thickness of the GaN nucleation layer 3 is 20-50 nm, and the thickness of the GaN buffer layer 4 is 1-3 μm.

[0042] Furthermore, the thickness of the n-type InP channel layer 5 in each stacked structure is 10-20 nm, and the thickness of the GaN barrier layer 6 is 15-25 nm. The doping element in the n-type InP channel layer 5 is Si, and the doping concentration is 3×10 18 cm -3 The source electrode 7, the drain electrode 8 and the gate electrode 10 are all laminated metals of Ni with a thickness of 20 to 40 nm and Au with a thickness of 80 to 150 nm. Preferably, the thickness of Ni is 30 nm and the thickness of Au is 100 nm. The material of the dielectric layer 9 is Al2O3, with a thickness of 10 to 20 nm, preferably 10 nm.

[0043] See also Figure 2 , Figure 2 Schematic diagram of the specific structure of a GaN / InP multi-channel heterojunction device based on a diamond substrate provided by an embodiment of the present invention. In a specific embodiment, the number of stacked structures of the n-type InP channel layer 5 and the GaN barrier layer 6 is 5, such as Figure 2 As shown, the thickness of the n-type InP channel layer 5 in each stacked structure is 20 nm, and the thickness of the GaN barrier layer 6 is 15 nm.

[0044] The present invention uses diamond material as the substrate of the GaN / InP multi-channel heterojunction device. The thermal conductivity of the diamond material is as high as 2000W / m·K, which is several times that of traditional substrate materials such as sapphire and SiC. It can efficiently dissipate the heat generated during the operation of the device and significantly reduce the junction temperature of the device. This significant heat dissipation capability effectively alleviates the thermal accumulation effect of the device under high power, avoids the problem of decreased mobility due to increased junction temperature, and thus improves the high-frequency performance and reliability of the device. In addition, the introduction of InP material as a conductive channel layer in the multi-channel structure formed by the n-type InP channel layer and the GaN barrier layer further optimizes the device performance. Compared with GaN material, the electron mobility of InP is about 5000cm 2 / V·s, which is several times that of GaN materials. It can significantly improve the device's conductivity and carrier migration efficiency under high temperature and high frequency conditions. The multi-channel design combined with the high mobility advantage of InP not only enhances the carrier transmission capability, but also further improves the device's drive current and switching speed. Compared with traditional AlGaN / GaN heterojunction devices, it can significantly improve the device's high power and high frequency characteristics.

[0045] Embodiment 2

[0046] On the basis of Example 1, this embodiment provides a method for preparing a GaN / InP multi-channel heterojunction device based on a diamond substrate, the preparation method comprising:

[0047] S1: Select a diamond substrate 1 and grow a boron nitride insertion layer 2 on the diamond substrate 1, such as Figure 3a shown.

[0048] Specifically, a diamond substrate 1 with a thickness of about 300 to 500 μm is selected, and the diamond substrate 1 is placed in a container containing an acetone solution, and cleaned in an ultrasonic cleaning tank for 10 to 15 minutes, preferably 15 minutes; the cleaned diamond substrate 1 is taken out and the acetone on the surface of the diamond substrate 1 is washed with anhydrous ethanol, and then the sample surface is blown dry with a nitrogen gun.

[0049] Subsequently, the boron nitride film grown on the metal catalyst is transferred to the surface of the auxiliary organic material through a transfer process, the boron nitride film on the surface of the auxiliary organic material is pasted onto the treated diamond substrate 1, and the auxiliary organic material is dissolved by an organic solvent, and finally a boron nitride insertion layer 2 with a thickness of 1 to 3 nm is formed. Specifically, the metal catalyst of this embodiment is selected from materials such as palladium (Pd), platinum (Pt), gold (Au) or copper (Cu), which have high catalytic activity, can promote the growth of the boron nitride film, and can be easily separated from the boron nitride film during the transfer process. Auxiliary organic materials are commonly used polymer films or flexible substrate materials such as polyester (PET).

[0050] S2: sequentially growing a GaN nucleation layer 3 and a GaN buffer layer 4 on the boron nitride insertion layer 2, such as Figure 3b shown.

[0051] In this step, a GaN nucleation layer 3 with a thickness of 20 to 50 nm is grown on the upper surface of the boron nitride insertion layer 2 using a MOCVD (Metal-organic Chemical Vapor Deposition) growth process; then a GaN buffer layer 4 with a thickness of 1 to 3 μm is grown on the upper surface of the GaN nucleation layer 3 using a MOCVD growth process.

[0052] Specifically, the sample treated in step S1 is placed in the reaction chamber of the MOCVD equipment, the temperature of the MOCVD equipment reaction chamber is set to 900°C, the pressure of the reaction chamber is set to 20Torr, and a nitrogen source with a flow rate of 2000sccm and a gallium source with a flow rate of 50sccm are introduced at the same time, and a GaN nucleation layer with a thickness of 25nm is grown on the upper surface of the boron nitride insertion layer 2 by the MOCVD process. Subsequently, the temperature of the reaction chamber is increased to 950°C, the pressure of the reaction chamber is adjusted to 25Torr, and a nitrogen source with a flow rate of 2500sccm and a gallium source with a flow rate of 50sccm are introduced at the same time, and a GaN buffer layer with a thickness of 15nm is grown on the upper surface of the GaN nucleation layer 3 by the MOCVD process.

[0053] S3: growing a stacked structure of multiple n-type InP channel layers 5 and GaN barrier layers 6 on the upper surface of the GaN buffer layer 4, each stacked structure comprising an n-type InP channel layer and a GaN barrier layer arranged on the upper surface of the n-type InP channel layer.

[0054] In this embodiment, a 10-20 nm n-type InP channel layer 5 is grown on the upper surface of the GaN buffer layer 4 by using a MOCVD growth process; a 15-25 nm GaN barrier layer 6 is grown on the upper surface of the n-type InP channel layer 5 by using a MOCVD growth process, thereby forming a stacked structure of an n-type InP channel layer 5 and a GaN barrier layer 6. Subsequently, the above steps are repeated to continue growing 3-5 identical stacked structures on the stacked structure. The thickness of the n-type InP channel layer 5 in each stacked structure is 10-20 nm, the thickness of the GaN barrier layer 6 is 15-25 nm, and the doping element in the n-type InP channel layer 5 is Si, with a doping concentration of 3×10 18 cm -3 .

[0055] Preferably, the number of layers of the laminated structure is 5, and the specific preparation process of this step includes:

[0056] The temperature of the reaction chamber is lowered to 650°C, and a phosphorus source with a flow rate of 2000sccm, an indium source with a flow rate of 20sccm, and a silane (SiH4) with a flow rate of 10sccm are introduced, and a 20nm thick n-type InP channel layer is grown on the upper surface of the GaN buffer layer 4 using a MOCVD growth process; the temperature of the reaction chamber is increased to 950°C, the pressure of the reaction chamber is adjusted to 25Torr, and a nitrogen source with a flow rate of 2500sccm and a gallium source with a flow rate of 50sccm are introduced at the same time, and a GaN barrier layer with a thickness of 15nm is grown on the n-type InP channel layer using a MOCVD process to obtain a stacked structure of a first n-type InP channel layer 5 and a GaN barrier layer 6.

[0057] Subsequently, the temperature of the reaction chamber is lowered to 650°C, a phosphorus source with a flow rate of 2000sccm and an indium source with a flow rate of 20sccm are introduced, and a 20nm thick n-type InP channel layer is grown on the GaN barrier layer using a MOCVD growth process; the temperature of the reaction chamber is increased to 950°C, the pressure of the reaction chamber is adjusted to 25Torr, and a nitrogen source with a flow rate of 2500sccm and a gallium source with a flow rate of 50sccm are introduced at the same time, and a 15nm thick GaN barrier layer is grown on the n-type InP channel layer using a MOCVD process, to obtain a stacked structure of a second n-type InP channel layer 5 and a GaN barrier layer 6.

[0058] Next, the above steps are repeated to prepare a stacked structure of five n-type InP channel layers 5 and GaN barrier layers 6, as shown in FIG. Figure 3cPreferably, the thickness of the n-type InP channel layer 5 in each stacked structure is 20 nm, and the thickness of the GaN barrier layer 6 is 15 nm.

[0059] S4: Depositing metal on both sides of the upper surface of the stacked structure to form a source electrode 7 and a drain electrode 8, such as Figure 3d shown.

[0060] Specifically, on the left and right sides of the upper surface of the uppermost GaN barrier layer, the source electrode 7 and the drain electrode 8 are formed by electron beam evaporation process. Specifically, the source electrode 7 and the drain electrode 8 are both a stacked metal structure of 30nm thick Ni and 100nm thick Au.

[0061] S5: A dielectric layer 9 and a gate 10 are sequentially grown on the upper surface of the stacked structure between the source electrode 7 and the drain electrode 8. Figure 3e shown.

[0062] Specifically, Al2O3 with a thickness of 10 nm is grown on the upper surface of the stacked structure between the source 7 and the drain 8 by using a MOCVD growth process to form a dielectric layer 9, and then Ni with a thickness of 30 nm and Au with a thickness of 100 nm are grown on the upper surface of the dielectric layer 9 to form a gate 10.

[0063] The present invention achieves the coordinated optimization of heat dissipation capability and mobility by introducing diamond substrate and InP material into the multi-channel structure, and effectively solves the problem of device performance degradation caused by insufficient heat dissipation and decreased mobility in traditional GaN-based high-current power devices. The present invention integrates the high-efficiency heat dissipation performance of the diamond substrate, the voltage-resistant advantage of the GaN material, the high electron mobility of the InP material, and the high current density brought by the multi-channel structure, which can comprehensively improve the performance and reliability of the device and realize the preparation of high-speed and high-current devices with strong heat dissipation capability.

[0064] In the several embodiments provided by the present invention, it should be understood that the apparatus and method disclosed by the present invention can be implemented in other ways. For example, the apparatus embodiments described above are only illustrative, for example, the division of the modules is only a logical function division, and there may be other division methods in actual implementation, for example, multiple modules or components can be combined or integrated into another system, or some features can be ignored or not executed.

[0065] In addition, each functional module in each embodiment of the present invention may be integrated into one processing module, or each module may exist physically separately, or two or more modules may be integrated into one module. The above-mentioned integrated module may be implemented in the form of hardware or in the form of hardware plus software functional modules.

[0066] The above contents are further detailed descriptions of the present invention in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is limited to these descriptions. For ordinary technicians in the technical field to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, which should be regarded as falling within the protection scope of the present invention.

Claims

1. A GaN / InP multi-channel heterojunction device based on a diamond substrate, characterized in that: The invention comprises a diamond substrate (1), a boron nitride insertion layer (2), a GaN nucleation layer (3) and a GaN buffer layer (4) which are arranged in sequence from bottom to top, wherein: A multi-layer stacked structure is arranged on the upper surface of the GaN buffer layer (4), each stacked structure comprising an n-type InP channel layer (5) and a GaN barrier layer (6) arranged on the upper surface of the n-type InP channel layer (5); A source electrode (7) and a drain electrode (8) are respectively formed on both sides of the upper surface of the stacked structure; a dielectric layer (9) and a gate electrode (10) are sequentially arranged on the upper surface of the stacked structure between the source electrode (7) and the drain electrode (8).

2. The GaN / InP multi-channel heterojunction device based on a diamond substrate according to claim 1, characterized in that: The thickness of the diamond substrate (1) is 300-500 μm, the thickness of the boron nitride insertion layer (2) is 1-3 nm, the thickness of the GaN nucleation layer (3) is 20-50 nm, and the thickness of the GaN buffer layer (4) is 1-3 μm.

3. The GaN / InP multi-channel heterojunction device based on a diamond substrate according to claim 1, characterized in that: The number of the stacked structures is 3 to 5.

4. The GaN / InP multi-channel heterojunction device based on a diamond substrate according to claim 1, characterized in that: The thickness of the n-type InP channel layer (5) in each stacked structure is 10 to 20 nm, and the thickness of the GaN barrier layer (6) is 15 to 25 nm.

5. The GaN / InP multi-channel heterojunction device based on a diamond substrate according to claim 1, characterized in that: The doping element in the n-type InP channel layer (5) is Si, and the doping concentration is 3×10 18 cm -3 .

6. The GaN / InP multi-channel heterojunction device based on a diamond substrate according to claim 1, characterized in that: The source electrode (7), the drain electrode (8) and the gate electrode (10) are all laminated metals of Ni with a thickness of 20 to 40 nm and Au with a thickness of 80 to 150 nm.

7. The GaN / InP multi-channel heterojunction device based on a diamond substrate according to claim 1, characterized in that: The material of the dielectric layer (9) is Al2O3 and has a thickness of 10 to 20 nm.

8. A method for preparing a GaN / InP multi-channel heterojunction device based on a diamond substrate, characterized in that: Used for preparing a GaN / InP multi-channel heterojunction device according to any one of claims 1 to 7, the preparation method comprising: S1: selecting a diamond substrate (1), and growing a boron nitride insertion layer (2) on the diamond substrate (1); S2: sequentially growing a GaN nucleation layer (3) and a GaN buffer layer (4) on the boron nitride insertion layer (2); S3: sequentially growing a multilayer stacked structure on the upper surface of the GaN buffer layer (4), wherein each stacked structure comprises an n-type InP channel layer (5) and a GaN barrier layer (6) arranged on the upper surface of the n-type InP channel layer (5); S4: depositing metals on both sides of the upper surface of the stacked structure to form a source electrode (7) and a drain electrode (8); S5: A dielectric layer (9) and a gate (10) are sequentially grown on the upper surface of the stacked structure between the source electrode (7) and the drain electrode (8).

9. The method for preparing a GaN / InP multi-channel heterojunction device based on a diamond substrate according to claim 8, characterized in that: The S1 includes: A diamond substrate (1) with a thickness of 300 to 500 μm is selected, and the diamond substrate (1) is placed in an acetone solution and cleaned in an ultrasonic cleaning tank for 10 to 15 minutes; the cleaned diamond substrate (1) is taken out and cleaned with anhydrous ethanol and then blown dry; A boron nitride film is grown on a metal catalyst, and then the boron nitride film grown on the metal catalyst is transferred to the surface of an auxiliary organic material through a transfer process, and the boron nitride film on the surface of the auxiliary organic material is adhered to a blow-dried diamond substrate (1), and the auxiliary organic material is dissolved by an organic solvent to form a boron nitride insertion layer (2) with a thickness of 1 to 3 nm on the diamond substrate (1).

10. The method for preparing a GaN / InP multi-channel heterojunction device based on a diamond substrate according to claim 7, characterized in that: The S3 includes: An n-type InP channel layer (5) is grown on the upper surface of the GaN buffer layer (4) by using a MOCVD growth process, and then a GaN barrier layer (6) is grown on the upper surface of the n-type InP channel layer (5) by using a MOCVD growth process, so as to form a stacked structure of the n-type InP channel layer (5) and the GaN barrier layer (6); Continue to grow 3 to 5 stacked structures of n-type InP channel layers (5) and GaN barrier layers (6) on the current stacked structure, wherein the thickness of the n-type InP channel layer (5) in each stacked structure is 10 to 20 nm, and the thickness of the GaN barrier layer (6) is 15 to 25 nm.

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