Integrated equipment of composite transmission layer and battery piece preparation process

Abstract

The invention discloses integrated equipment of a composite transmission layer and a battery piece preparation process, and the preparation process of the battery piece comprises the following steps: S1, depositing a first transmission layer on the surface of a battery piece body; s2, carrying out an annealing process on the battery piece; s3, performing a light injection process on the battery piece; s4, depositing a second transmission layer on the surface of the first transmission layer; and S5, performing a patterning and electro-coppering process, and preparing a metal grid line. According to the preparation process, a metal grid line electroplating process is introduced to replace a screen printing metal grid line through disc improvement, that is, before a wet process is carried out, annealing treatment is carried out after TCO preparation, so that the chemical resistance of a TCO layer is enhanced; and then light injection is carried out, so that non-radiative recombination of current carriers caused by some defect states or trap states generally existing at the interface of the cell can be reduced. And finally, the open voltage Voc and the conversion efficiency of the battery piece are improved.

Description

Technical Field

[0001] The present invention relates to the field of photovoltaic manufacturing, and in particular to an integrated device for a composite transmission layer and a solar cell preparation process. Background Art

[0002] HIT cells (heterojunction cells) are considered the mainstream of the next generation of crystalline silicon cells due to their natural bifacial power generation characteristics, coupled with the removal of silver (replacing the conductive paste silver grid lines with copper electroplated grid lines).

[0003] Among them, the conventional preparation process is to prepare the amorphous silicon / microcrystalline silicon doping layer, then prepare the TCO layer, prepare the bottom seed layer, prepare the fine line patterning, prepare the electroplating gate line process, and remove the film and etch the bottom seed layer. Then, after the light injection process, a copper metal gate line battery cell can be obtained.

[0004] However, this process thinking is to prepare the TCO layer based on the past printing process thinking. In other words, after the metal grid lines are prepared using conductive silver paste in the past, the cell is completed and will not go through the wet process. However, for the cell that uses the electroplating process to prepare the metal grid lines, after the transmission layer is prepared, it will also undergo development and film removal processes (facing alkaline wet process chemicals), copper electroplating and bottom seed layer removal processes (facing acidic wet process chemicals). Therefore, there is no further understanding and improvement of the chemical resistance of the TCO layer. Summary of the invention

[0005] In order to overcome the above disadvantages, the present invention aims to provide a process for preparing a solar cell, wherein an annealing process and a light injection process are performed after the TCO layer is deposited to improve the chemical resistance of the TCO layer.

[0006] In order to achieve the above purpose, the technical solution adopted by the present invention is: a process for preparing a battery cell, comprising the following steps: S1, depositing a first transmission layer on the surface of the battery cell body; S2, performing annealing process on the battery cell; S3, performing a light injection process on the cell; S4, depositing a second transmission layer on the surface of the first transmission layer; S5. Perform patterning and copper electroplating processes to prepare metal gate lines.

[0007] In the industry, generally, after the silver paste screen printing process is completed to prepare the metal grid line, the cell is subjected to the light injection process. The present invention performs the light injection process on the cell before electroplating the metal grid line. On the one hand, it can avoid the cell from being repeatedly cooled-heated-cooled-heated, thereby improving the chemical resistance of the TCO layer; on the other hand, it can destroy the floating bonds, release and reorganize the H atoms on them, and form a strong Si-Si bond, thereby improving the passivation effect. In addition, the light injection process is performed before the metal grid line is prepared to avoid oxidation of the metal grid line, which causes an increase in contact resistance.

[0008] Furthermore, in S2, the annealing process is performed in the atmosphere. The annealing process can make the light injection of the amorphous silicon film more saturated, which is more conducive to improving the open circuit voltage and fill factor of the silicon heterojunction solar cell, thereby further improving the cell efficiency of the silicon heterojunction solar cell. Compared with the annealing process performed in the vacuum deposition equipment, the present application performs the annealing process in the atmosphere, thereby reducing the equipment investment cost.

[0009] Furthermore, in S2, the light injection process is performed in the atmosphere. The light injection process more effectively improves the open circuit voltage and fill factor of the silicon heterojunction solar cell, thereby further improving the cell efficiency of the silicon heterojunction solar cell. Compared with performing the light injection process in a vacuum deposition device, the light injection process in the atmosphere of the present application reduces the equipment investment cost.

[0010] Furthermore, the material of the first transmission layer is selected from any one or more of ITO (indium tin oxide), IWO (indium tungsten oxide), VTTO (vertical target tin oxide), AZO (aluminum doped zinc oxide), SnO2 (tin dioxide), and the thickness of the first transmission layer ranges from 5nm to 200nm. The first transmission layer is a TCO layer, which is a transparent conductive layer, which can be used for lateral conduction and passivation protection of the battery cell. The first transmission layer can be a single-layer structure or a multi-layer structure deposited by a single material layer, or a multi-layer structure deposited by multiple material layers.

[0011] Furthermore, the deposition temperature of the first transfer layer is 80°C~150°C, and the temperature control range is divided into three stages, including the pre-vacuum preparation section temperature ranging from 80°C~150°C, the vacuum deposition section temperature ranging from 100°C~150°C and the post-vacuum exit section temperature ranging from 80°C~100°C.

[0012] Further, the temperature range of the atmospheric annealing process is 80°C to 200°C to anneal the material of the first transmission layer. Exemplarily, the temperature of the atmospheric annealing process is 80°C, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, 160°C, 170°C, 180°C, 190°C, 200°C.

[0013] Furthermore, the light source of the atmospheric light injection section is selected from any one or more of a halogen light source, a laser light source, an LED light source, and an infrared light source. The light intensity range is 10-100 kw / m 2 ; The illumination wavelength is a mixed light or a single light in the range of 200 to 1100 nm.

[0014] Furthermore, the material of the second transmission layer is selected from one or more of gold, silver, copper, nickel, tin or their alloy materials. The deposition thickness of the second transmission layer ranges from 5nm to 150nm; the second transmission layer can be a single-layer structure or a multi-layer structure deposited by a single material layer, or a multi-layer structure deposited by multiple material layers.

[0015] Furthermore, the second transfer layer deposition temperature is 80°C~150°C, and the temperature control range is divided into three stages, including the pre-vacuum preparation section temperature ranging from 80°C~150°C, the vacuum deposition section temperature ranging from 100°C~150°C and the post-vacuum exit section temperature ranging from 80°C~100°C.

[0016] An integrated device for a composite transmission layer includes a vacuum deposition section, an atmospheric annealing section, and an atmospheric light injection section. The vacuum deposition section includes a first transmission layer deposition section and a second transmission layer deposition section; the first transmission layer deposition section, the atmospheric annealing section, the atmospheric light injection section, and the second transmission layer deposition section are arranged in sequence.

[0017] The cell is carried by the carrier, including but not limited to carrying the cell horizontally or vertically through the first transmission layer deposition section, atmospheric annealing section, atmospheric light injection section, and second transmission layer deposition section of the integrated device in sequence. The first transmission layer deposition section is used to deposit the first transmission layer on the surface of the cell, the atmospheric annealing section is used to perform an annealing process on the cell, the atmospheric light injection section is used to perform a light injection process on the cell, and the second transmission layer deposition section is used to deposit the second transmission layer on the surface of the first transmission layer of the cell.

[0018] Furthermore, the first transfer layer deposition section is a vacuum deposition device, not limited to PVD or RPD vacuum deposition equipment. It can be further divided into a front vacuum preparation section, a vacuum deposition section, and a rear vacuum exit section; including but not limited to single-sided or double-sided battery cell application to maintain the most economical and best quality vacuum deposition process.

[0019] Furthermore, the first transport layer deposition section includes a first pre-vacuum preparation section, a first vacuum deposition section, and a first post-vacuum exit section. A heating component is provided on the first transport layer deposition section to control the temperature of the battery cell. The temperature control range is 80°C to 150°C in the first pre-vacuum preparation section, 100°C to 150°C in the first vacuum deposition section, and 80°C to 100°C in the first post-vacuum exit section.

[0020] Furthermore, the first transfer layer deposition section is a vacuum deposition device, not limited to PVD or RPD vacuum deposition equipment. The first transfer layer deposition is performed on one side or both sides of the cell to maintain the most economical and best quality vacuum deposition process.

[0021] Furthermore, the second transport layer deposition section includes a second pre-vacuum preparation section, a second vacuum deposition section, and a second post-vacuum exit section. A heating component is provided on the second transport layer deposition section to control the temperature of the cell. The temperature control range is 80°C to 150°C in the second pre-vacuum preparation section, 100°C to 150°C in the second vacuum deposition section, and 80°C to 100°C in the second post-vacuum exit section.

[0022] Furthermore, the second transfer layer deposition section is a vacuum deposition device, not limited to PVD or RPD vacuum deposition equipment. The second transfer layer is deposited on one side or both sides of the cell to maintain the most economical and best quality vacuum deposition process.

[0023] Vacuum thin film deposition processes / equipment / materials such as PVD or RPD, annealing processes / equipment, light injection processes / equipment, patterning processes / equipment / materials, electroplating deposition processes / equipment / materials, film stripping processes / equipment / materials and bottom copper seed layer etching processes / equipment / materials are all mature processes / equipment and materials used in the industry and will not be elaborated here.

[0024] The beneficial effects of the present invention are: 1) The preparation process of the cell of the present invention is a comprehensive improvement on the introduction of the electroplating metal grid line process to replace the screen-printed metal grid line. That is, before the wet process, the TCO is annealed after preparation to enhance the chemical resistance of the TCO layer; then light injection is performed to reduce the non-radiative recombination of carriers caused by some defect states or trap states that usually exist at the interface of the battery. During the light injection process, the photogenerated carriers generated by the incident light will fill these defect states, causing them to temporarily fail, thereby reducing the number of recombination centers. And it can promote hydrogen passivation. It activates and releases more hydrogen atoms, which can effectively passivate dangling bonds and other defects on the silicon surface, further improving the surface passivation quality. Ultimately, the Voc and conversion efficiency of the cell are improved.

[0025] 2) The annealing process and light injection process of the present invention are carried out in an atmospheric atmosphere, thereby reducing equipment investment costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The drawings constituting a part of this application are used to provide a further understanding of the present invention. The illustrative embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute improper limitations on the present invention.

[0027] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0028] Figure 1 Schematic diagram of an integrated device of a composite transport layer synthesized by the present invention.

[0029] 1. First transmission layer deposition section; 2. Atmospheric annealing section; 3. Atmospheric light injection section; 4. Second transmission layer deposition section; 5. Cells that have completed the IP / IN layer; 6. Cells that have completed the TCO layer; 7. Cells that have completed the seed layer. DETAILED DESCRIPTION

[0030] In order to make the above-mentioned purpose, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below. In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present invention, so the present invention is not limited by the specific embodiments disclosed below.

[0031] Except as shown in the operating examples or otherwise indicated, all numbers used in the specification and claims to indicate the amount of ingredients, physicochemical properties, etc. are understood to be adjusted by the term "about" in all cases. Therefore, unless otherwise indicated, the numerical parameters listed in the above specification and the attached claims are approximate values, and those skilled in the art can use the teachings disclosed herein to seek to obtain the desired properties and appropriately change these approximate values. The use of numerical ranges expressed as endpoints includes all numbers within the range and any range within the range, for example, 1 to 5 includes 1, 1.1, 1.3, 1.5, 2, 2.75, 3, 3.80, 4 and 5, etc.

[0032] Unless otherwise stated, all parts, percentages, and ratios reported in the following examples are based on weight, and all reagents used in the examples are commercially available or synthesized according to conventional methods and can be used directly without further treatment, and the instruments used in the examples are commercially available.

[0033] See attached Figure 1As shown, an integrated device for a composite transmission layer includes a vacuum deposition section, an atmospheric annealing section 2, and an atmospheric light injection section 3. The vacuum deposition section includes a first transmission layer deposition section 1 and a second transmission layer deposition section 4; the first transmission layer deposition section 1, the atmospheric annealing section 2, the atmospheric light injection section 3, and the second transmission layer deposition section 4 are arranged in sequence.

[0034] The cell 5 that has completed the ip / in layer is carried by a carrier, including but not limited to carrying the cell horizontally or vertically through the first transmission layer deposition section 1 of the integrated device in sequence, depositing the first transmission layer (TCO layer) on the surface of the cell, and the cell 6 that has completed the TCO layer passes through the atmospheric annealing section 2 for performing an annealing process on the cell, and then passes through the atmospheric light injection section 3, the atmospheric light injection section 3 is used to perform a light injection process on the cell, and then enters the second transmission layer deposition section 4, deposits a seed layer on the side of the TCO layer away from the cell, and finally performs a patterning process and a copper electroplating process on the cell 7 that has completed the seed layer to prepare a metal grid line on the cell.

[0035] In some embodiments, the first transfer layer deposition section is a vacuum deposition device, not limited to PVD or RPD vacuum deposition equipment. It can be further divided into a front vacuum preparation section, a vacuum deposition section, and a rear vacuum exit section; including but not limited to single-sided or double-sided battery cell application to maintain the most economical and best quality vacuum deposition process.

[0036] In some embodiments, the first transport layer deposition section includes a first pre-vacuum preparation section, a first vacuum deposition section, and a first post-vacuum exit section. A heating component is provided on the first transport layer deposition section to control the temperature of the battery cell. The temperature control range is 80°C to 150°C in the first pre-vacuum preparation section, 100°C to 150°C in the first vacuum deposition section, and 80°C to 100°C in the first post-vacuum exit section.

[0037] In some embodiments, the first transfer layer deposition stage is a vacuum deposition device, not limited to PVD or RPD vacuum deposition devices. The first transfer layer deposition is performed on one side or both sides of the cell to maintain the most economical and best quality vacuum deposition process.

[0038] In some embodiments, the second transport layer deposition section includes a second pre-vacuum preparation section, a second vacuum deposition section, and a second post-vacuum exit section. A heating component is provided on the second transport layer deposition section to control the temperature of the cell. The temperature control range is 80°C to 150°C in the second pre-vacuum preparation section, 100°C to 150°C in the second vacuum deposition section, and 80°C to 100°C in the second post-vacuum exit section.

[0039] In some embodiments, the second transfer layer deposition section is a vacuum deposition device, not limited to PVD or RPD vacuum deposition devices. The second transfer layer is deposited on one side or both sides of the cell to maintain the most economical and best quality vacuum deposition process.

[0040] Vacuum thin film deposition processes / equipment / materials such as PVD or RPD, annealing processes / equipment, light injection processes / equipment, patterning processes / equipment / materials, electroplating deposition processes / equipment / materials, film stripping processes / equipment / materials and bottom copper seed layer etching processes / equipment / materials are all mature processes / equipment and materials used in the industry and will not be elaborated here.

[0041] Example 1 An embodiment of the present invention provides a battery cell preparation process, which specifically includes the following steps: S1, depositing a first transmission layer on the surface of the battery cell body; The cell body is a cell that has completed the ip / in layer, specifically: an intrinsic amorphous silicon film is prepared on both sides of an N-type silicon substrate, and the thickness of the intrinsic amorphous silicon film ranges from 6nm.

[0042] On the two surfaces of the intrinsic amorphous silicon film, ip and in microcrystalline silicon doping layers are prepared respectively to form an ip layer and an in layer. The thickness of the ip layer is 20nm, and the thickness of the in layer is 20nm.

[0043] After the cell is loaded into the carrier plate, it is loaded into the first transmission layer deposition section by a horizontal chain to deposit the first transmission layer (ITO layer) on both sides. The thickness of the first transmission layer is in the range of 95nm.

[0044] S2, performing annealing process on the battery cell; The above-mentioned battery cell is loaded into the atmospheric annealing stage, the annealing temperature is 155±5°C, and the annealing time is 10 minutes.

[0045] S3, performing a light injection process on the cell; The above-mentioned cell was loaded into the atmospheric light injection section, and the temperature was controlled at 160°C for 2 minutes with a mixed LED light source with a wavelength range of 600nm and an intensity range of 15kw / m 2 Light injection process.

[0046] S4. Depositing a seed layer on the surface of the TCO layer.

[0047] The above-mentioned cell is loaded into the second transmission layer deposition section to deposit a double-sided copper seed layer. The copper seed layer (second transmission layer) has a thickness range of 90 nm.

[0048] S5, patterning and copper electroplating the above-mentioned cell, respectively obtaining metal grid lines with a width of 16um, a thickness of 10um, and a line width of 2% of the electroplating area on the front side, and metal grid lines with a line width of 90um, a thickness of 4um, and a plating area of ​​2.5% on the back side.

[0049] S6, removing the mask layer and etching the copper seed layer in the non-gate line area to obtain a TCO layer with a composite transmission layer, good chemical resistance and conductivity, and a high Voc cell.

[0050] Example 2 The process steps of Example 2 and Example 1 are basically the same, and the main difference is that in step S2, the annealing treatment time is 20 minutes.

[0051] Example 3 The process steps of Example 3 and Example 1 are basically the same, and the main difference is that in step S2, the annealing temperature is 175±5°C.

[0052] Example 4 The process steps of Example 4 and Example 3 are basically the same, and the main difference is that in step S2, the annealing treatment time is 20 minutes.

[0053] Example 5 The process steps of Example 5 are basically the same as those of Example 1, with the main difference being that in step S2, the annealing temperature is 195±5°C.

[0054] Example 6 The process steps of Example 6 and Example 5 are basically the same, and the main difference is that in step S2, the annealing treatment time is 20 minutes.

[0055] Example 7 An embodiment of the present invention provides a battery cell preparation process, which specifically includes the following steps: S1, depositing a first transmission layer on the surface of the battery cell body; The cell body is a cell that has completed the ip / in layer, specifically: an intrinsic amorphous silicon film is prepared on both sides of an N-type silicon substrate, and the thickness of the intrinsic amorphous silicon film ranges from 2nm.

[0056] On the two surfaces of the intrinsic amorphous silicon film, ip and in microcrystalline silicon doping layers are prepared respectively to form an ip layer and an in layer. The thickness of the ip layer is 20nm, and the thickness of the in layer is 20nm.

[0057] After the above-mentioned cell is loaded into the carrier plate, it is loaded into the first transmission layer deposition section by a horizontal chain to deposit the first transmission layer (ITO layer) on both sides. The thickness of the first transmission layer ranges from 90nm.

[0058] S2, performing annealing process on the battery cell; The above-mentioned battery cell is loaded into the atmospheric annealing stage, the annealing temperature is 155±5°C, and the annealing time is 10 minutes.

[0059] S3, performing a light injection process on the cell; The above-mentioned cell was loaded into the atmospheric light injection section, and the temperature was controlled at 150°C for 2 minutes and the intensity was 15kw / m with a mixed LED light source with a wavelength range of 200nm. 2 Light injection process.

[0060] S4, depositing a second transmission layer on the surface of the first transmission layer.

[0061] The above-mentioned cell is loaded into the second transmission layer deposition section to deposit a double-sided copper seed layer. The copper seed layer (second transmission layer) has a thickness range of 100 nm.

[0062] S5, patterning and copper electroplating the above-mentioned cell, respectively obtaining metal grid lines with a line width of 15um, a thickness of 10um, and a line width of 1.8% of the electroplating area on the front side, and metal grid lines with a line width of 100um, a thickness of 5um, and a line width of 2.8% of the electroplating area on the back side.

[0063] S6, removing the mask layer and etching the copper seed layer in the non-gate line area to obtain a TCO layer with a composite transmission layer, good chemical resistance and conductivity, and a high Voc cell.

[0064] Example 8 An embodiment of the present invention provides a battery cell preparation process, which specifically includes the following steps: S1, depositing a first transmission layer on the surface of the battery cell body; The cell body is a cell that has completed the ip / in layer, specifically: an intrinsic amorphous silicon film is prepared on both sides of an N-type silicon substrate, and the thickness of the intrinsic amorphous silicon film ranges from 10nm.

[0065] On the two surfaces of the intrinsic amorphous silicon film, ip and in microcrystalline silicon doping layers are prepared respectively to form an ip layer and an in layer. The thickness of the ip layer is 25nm, and the thickness of the in layer is 25nm.

[0066] After the cell is loaded into the carrier plate, it is loaded into the first transmission layer deposition section by a horizontal chain to deposit the first transmission layer (ITO layer) on both sides. The thickness of the first transmission layer is in the range of 100nm.

[0067] S2, performing annealing process on the battery cell; The above-mentioned battery cell is loaded into the atmospheric annealing stage, the annealing temperature is 155±5°C, and the annealing time is 10 minutes.

[0068] S3, performing a light injection process on the cell; The above-mentioned cell was loaded into the atmospheric light injection section, and the temperature was controlled at 170°C for 2 minutes with a mixed LED light source with a wavelength range of 1100nm and an intensity range of 10kw / m 2 Light injection process.

[0069] S4, depositing a second transmission layer on the surface of the first transmission layer.

[0070] The above-mentioned cell is loaded into the second transmission layer deposition section to deposit a double-sided copper seed layer. The copper seed layer (second transmission layer) has a thickness range of 90 nm.

[0071] S5, the above-mentioned cell is patterned and copper electroplated to obtain metal grid lines with a line width of 18um, a thickness of 11um and a line width of 21.8% of the electroplating area on the front side, and a metal grid line with a line width of 90um, a thickness of 4um and a 2.5% electroplating area on the back side.

[0072] S6, removing the mask layer and etching the copper seed layer in the non-gate line area, thereby obtaining a cell with a composite transmission layer, a TCO layer with good chemical resistance and conductivity, and a high Voc.

[0073] Comparative Example 1 The process steps of Comparative Example 1 and Example 6 are basically the same, and the main difference is that the process steps are: first deposit a first transmission layer on the surface of the battery cell body → deposit a second transmission layer on the surface of the first transmission layer → perform patterning and copper electroplating process → perform light injection process on the battery cell.

[0074] Experimental Examples The battery cells prepared in Examples 1-6 and Comparative Example 1 were subjected to performance tests. The performance test results are shown in Table 1.

[0075] Table 1

[0076] It can be seen from the experimental data of Examples 1-6 and Comparative Example 1 that the opening voltage Voc, fill factor FF and energy conversion efficiency ETA of the cell are improved by performing an annealing process and a light injection process on the cell before electroplating the metal grid lines.

[0077] The present invention illustrates the detailed process equipment and process flow of the present invention through the above-mentioned embodiments, but the present invention is not limited to the above-mentioned detailed process equipment and process flow, that is, it does not mean that the present invention must rely on the above-mentioned detailed process equipment and process flow to be implemented. Those skilled in the art should understand that any improvement of the present invention, equivalent replacement of various raw materials of the product of the present invention, change of structural morphology, addition of auxiliary components, selection of specific methods, etc., all fall within the protection scope and disclosure scope of the present invention.

[0078] The preferred embodiments of the present invention are described in detail above. However, the present invention is not limited to the specific details in the above embodiments. Within the technical concept of the present invention, a variety of simple modifications can be made to the technical solution of the present invention, and these simple modifications all belong to the protection scope of the present invention.

[0079] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present invention will not further describe various possible combinations.

[0080] In addition, various embodiments of the present invention may be arbitrarily combined, and as long as they do not violate the concept of the present invention, they should also be regarded as the contents disclosed by the present invention.

[0081] The above implementation modes are only for illustrating the technical concept and features of the present invention, and their purpose is to enable people familiar with this technology to understand the content of the present invention and implement it, and they cannot be used to limit the protection scope of the present invention. Any equivalent changes or modifications made according to the spirit of the present invention should be included in the protection scope of the present invention.

Claims

1. A process for preparing a battery cell, characterized in that: The following steps are involved: S1, depositing a first transmission layer on the surface of the battery cell body; S2, performing annealing process on the battery cell; S3, performing a light injection process on the cell; S4, depositing a second transmission layer on the surface of the first transmission layer; S5. Perform patterning and copper electroplating processes to prepare metal gate lines.

2. The process for preparing a battery cell according to claim 1, characterized in that: In S2, the annealing process is performed in an air atmosphere.

3. The process for preparing a battery cell according to claim 1, characterized in that: In S3, the light injection process is performed in an atmospheric atmosphere.

4. The process for preparing a battery cell according to claim 1, characterized in that: In S1, the first transmission layer is a TCO layer, and the material is selected from any one or more of ITO, IWO, VTTO, AZO, and SnO2. The thickness of the first transmission layer is 5nm~200nm.

5. The process for preparing a battery cell according to claim 1, characterized in that: In S1, the temperature for depositing the first transfer layer is 80℃~150℃, and the temperature control range is divided into three stages, including the temperature of the front vacuum preparation section, the temperature of the vacuum deposition section and the temperature of the rear vacuum exit section. The temperature of the front vacuum preparation section is 80℃~150℃, the temperature of the vacuum deposition section is 100℃~150℃, and the temperature of the rear vacuum exit section is 80℃~100℃.

6. The process for preparing a battery cell according to claim 1, characterized in that: The temperature range of the atmospheric annealing process is 80℃~200℃.

7. The process for preparing a battery cell according to claim 1, characterized in that: S3 includes at least one of the following technical features: The light source of the light injection process is selected from any one or more of an infrared light source, a laser light source, a halogen light source, a laser light source, and an LED light source; The light intensity range is 10~100kw / m 2 ; The wavelength range of light is 200~1100nm.

8. The process for preparing a battery cell according to claim 1, characterized in that: The material of the second transmission layer is selected from one or more of gold, silver, copper, nickel, tin or alloy materials thereof, and the deposition thickness of the second transmission layer is in the range of 5 nm to 150 nm.

9. An integrated device of a composite transmission layer, characterized in that: It includes a vacuum deposition section, an atmospheric annealing section, and an atmospheric light injection section. The vacuum deposition section includes a first transmission layer deposition section and a second transmission layer deposition section. The first transmission layer deposition section, the atmospheric annealing section, the atmospheric light injection section, and the second transmission layer deposition section are arranged in sequence.

10. The integrated device of the composite transmission layer according to claim 9, characterized in that: Include at least one of the following technical features: The first transport layer deposition section is a vacuum deposition device, including a front vacuum preparation section, a vacuum deposition section, and a rear vacuum exit section; The atmospheric annealing section is not a vacuum deposition device; The atmospheric light injection section is not a vacuum deposition device; The second transfer layer deposition section is a vacuum deposition device, including a front vacuum preparation section, a vacuum deposition section and a rear vacuum exit section.

Images