Micro LED module and preparation method thereof

Abstract

The invention relates to the technical field of photoelectricity, and discloses a Micro LED module and a preparation method thereof.The preparation method comprises the following steps that a supporting substrate is provided, and a plurality of sets of chips are arranged on the supporting substrate; a flat layer is prepared on the supporting substrate, the periphery of the chip is filled with the flat layer, and the top face of the flat layer is flush with the top face of the electrode in the vertical direction; preparing a cathode fan-out electrode and an anode fan-out electrode on the cathode and the anode respectively; an isolation layer is prepared on the flat layer, the isolation layer fills the interval area, and the thickness of the isolation layer is larger than that of the cathode fan-out electrode or the anode fan-out electrode; and preparing a cathode layer and an anode layer on the cathode fan-out electrode and the anode fan-out electrode respectively, wherein the top surface of the cathode layer or the anode layer is not lower than the top surface of the isolation layer. According to the preparation method of the Micro LED module provided by the invention, the electrode fan-out and wiring of the micro chip can be realized, and the process is simple.

Description

Technical Field

[0001] The present invention relates to the field of optoelectronic technology, and in particular to a Micro LED module and a preparation method thereof. Background Art

[0002] When LED chips are reduced to less than 100μm, the current traditional chip transfer method is no longer applicable, so a new technical route is needed to match the micro-level chip application. Currently, the industry mostly uses a large number of tiny chips to be transferred to a substrate with circuits for welding and packaging, but this method has extremely high requirements for substrate precision and transfer accuracy, and also causes problems such as high cost and low transfer yield. Summary of the invention

[0003] The technical problem to be solved by the present invention is to provide a method for preparing a Micro LED module, which solves the problems of high precision requirements, low transfer yield and large yield loss in the transfer process caused by the small electrode size of the micro chip.

[0004] The technical problem to be solved by the present invention is also to provide a Micro LED module.

[0005] In order to solve the above technical problems, the present invention provides a method for preparing a Micro LED module, providing a supporting substrate, on which a plurality of groups of chips are arranged, wherein the chips include electrodes, the electrodes include a cathode and an anode, and the electrodes are arranged in a direction away from the supporting substrate;

[0006] Preparing a flat layer on the supporting substrate, wherein the flat layer fills the periphery of the chip, and in the vertical direction, the top surface of the flat layer is flush with the top surface of the electrode;

[0007] A cathode fan-out electrode and an anode fan-out electrode are respectively prepared on the cathode and the anode, and a spacing area is provided between the cathode fan-out electrode and the anode fan-out electrode;

[0008] Preparing an isolation layer on the flat layer, the isolation layer filling the spacing area, the thickness of the isolation layer being greater than the thickness of the cathode fan-out electrode or the anode fan-out electrode, so as to form a blank area above the cathode fan-out electrode and the anode fan-out electrode;

[0009] A cathode layer and an anode layer are respectively prepared on the cathode fan-out electrode and the anode fan-out electrode, and the cathode layer and the anode layer fill the blank area. In the vertical direction, the top surface of the cathode layer or the anode layer is not lower than the top surface of the isolation layer.

[0010] In some embodiments, the planar layer is made of a photosensitive material, and the photosensitive material includes one or more of photoresist, polyimide, and epoxy resin.

[0011] In some embodiments, the cathode fan-out electrode and the anode fan-out electrode both include one or more of Ti, Ni, Co, Sn, Cu, Au, Pt, Cr, and In.

[0012] In some embodiments, the isolation layer is made of a photosensitive material, and the photosensitive material includes one or more of photoresist, polyimide, and epoxy resin.

[0013] In some embodiments, the cathode layer and the anode layer both include one or more of Ti, Ni, Co, Sn, Cu, Au, Pt, Cr, and In.

[0014] In some embodiments, the planar layer or the isolation layer is cured by the following method:

[0015] The baking is carried out in a nitrogen atmosphere, the baking temperature is 100° C. to 400° C., and the baking time is 10 min to 120 min.

[0016] In some embodiments, the electrode is arranged in a direction away from the supporting substrate by the following method:

[0017] The chip is peeled off from the chip substrate and the chip is transferred to a temporary carrier, the electrode of the chip is bonded to the temporary carrier, the temporary carrier is flipped over, the electrode of the chip is peeled off from the temporary carrier and the chip is transferred to a supporting substrate, so that the electrode is arranged in a direction away from the supporting substrate.

[0018] In some embodiments, the chip includes a red chip, a green chip, and a blue chip.

[0019] In some embodiments, the red chip includes an R cathode and an R anode, the green chip includes a G cathode and a G anode, and the blue chip includes a B cathode and a B anode;

[0020] An R cathode fan-out electrode and an R anode fan-out electrode are respectively prepared on the R cathode and the R anode, a G cathode fan-out electrode and a G anode fan-out electrode are respectively prepared on the G cathode and the G anode, and a B cathode fan-out electrode and a B anode fan-out electrode are respectively prepared on the B cathode and the B anode;

[0021] The R cathode, the G cathode, and the B cathode are connected, or the R anode, the G anode, and the B anode are connected.

[0022] In order to solve the above technical problems, the present invention further provides a Micro LED module, and the Micro LED module is manufactured by the preparation method of the Micro LED module as described above.

[0023] The implementation of the present invention has the following beneficial effects:

[0024] The preparation method of the Micro LED module provided by the present invention uses a two-layer passivation protection structure of a flat layer and an isolation layer to realize that the electrodes of the micro LED chip are led out from the chip surface to the surrounding area, thereby achieving the effect of enlarging the electrodes of the micro chip around, solving the problem of high precision requirements, low transfer yield, and large yield loss in the transfer process caused by the small size of the electrodes of the micro chip, greatly simplifying the application requirements, and reducing the manufacturing cost of the subsequent packaging patch. At the same time, a flat layer is made on the surface of the supporting substrate to make the edge area of ​​the chip flush with the electrode of the chip, thereby achieving a flattening effect, and preventing the subsequent fan-out electrode metal from breaking due to the large difference between the chip electrode height and the edge area height.

[0025] Furthermore, the present invention only needs to use three steps of photolithography to realize the electrode fan-out and wiring of microchips and modules, with simple process and low cost, and is suitable for large-scale mass production needs.

[0026] The present invention leads the electrodes of the microchip to the edge of the packaged device through the structure of the fan-out electrode. It can further connect the cathodes or anodes of all chips together by circuit interconnection to form a common cathode or common anode structure. The remaining chip electrodes are then led out to different positions above the flat layer by evaporation or sputtering, thereby forming an integrated array of micro LED chips by common cathode or common anode. Therefore, any number of chips can be integrated together, thereby greatly improving the compatibility with different display application scenarios. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 This is a schematic diagram of an operation of arranging the electrode in a direction away from the supporting substrate 1 in a method for preparing a Micro LED module provided in an embodiment of the present invention;

[0028] Figure 2 A schematic diagram of a structure in which a plurality of groups of chips are arranged on a supporting substrate in a method for preparing a Micro LED module provided in an embodiment of the present invention;

[0029] Figure 3 A schematic diagram of a structure for preparing a flat layer on the supporting substrate in a method for preparing a Micro LED module provided in an embodiment of the present invention;

[0030] Figure 4A schematic diagram of a structure in which a cathode fan-out electrode and an anode fan-out electrode are respectively prepared on the cathode and the anode in a method for preparing a Micro LED module provided in an embodiment of the present invention;

[0031] Figure 5 A schematic diagram of a structure of preparing an isolation layer on the flat layer in a method for preparing a Micro LED module provided in an embodiment of the present invention;

[0032] Figure 6 A schematic diagram of a structure in which a cathode layer and an anode layer are respectively prepared on the cathode fan-out electrode and the anode fan-out electrode in a method for preparing a Micro LED module provided in an embodiment of the present invention;

[0033] Figure 7 This is a structural schematic diagram of connecting cathodes of all chips together to form a common cathode structure in a method for preparing a Micro LED module provided in one embodiment of the present invention. DETAILED DESCRIPTION

[0034] In order to make the purpose, technical scheme and advantages of the present invention clearer, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention. In addition, it should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0035] In the description of the present invention, it is necessary to understand that the terms "length", "width", "up", "down", "left", "right", "horizontal", "top", "bottom", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0036] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0037] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or mutual communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0038] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0039] The disclosure below provides many different embodiments or examples to realize different structures of the present invention. In order to simplify the disclosure of the present invention, the parts and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present invention. In addition, the present invention can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the examples of various specific processes and materials provided by the present invention, but those of ordinary skill in the art can be aware of the application of other processes and / or the use of other materials.

[0040] In the present invention, "preferred" and "better" are only used to describe implementation methods or embodiments with better effects, and it should be understood that they do not constitute a limitation on the scope of protection of the present invention. In the present invention, the technical features described in an open manner include closed technical solutions composed of the listed features, and also include open technical solutions containing the listed features. In the present invention, when involving numerical ranges, unless otherwise specified, the two endpoints of the numerical range are included.

[0041] In order to solve the above problems, the present invention provides a method for preparing a Micro LED module, comprising the following steps:

[0042] (1) providing a supporting substrate 100, on which a plurality of chips 200 are arranged, wherein the chips 200 include electrodes, wherein the electrodes include a cathode 210 and an anode 220, and the electrodes are arranged in a direction away from the supporting substrate 100;

[0043] In some embodiments, the electrode is arranged in a direction away from the support substrate 100 by the following method:

[0044] The chip 200 is peeled off from the chip 200 substrate and the chip 200 is transferred to a temporary carrier 700, the electrodes of the chip 200 are bonded to the temporary carrier 700, the temporary carrier 700 is flipped over, the electrodes of the chip 200 are peeled off from the temporary carrier 700 and the chip 200 is transferred to a supporting substrate 100, so that the electrodes are arranged in a direction away from the supporting substrate 100.

[0045] Preferably, the following method is used to realize that the electrode is arranged in a direction away from the supporting substrate 100:

[0046] 1.1) Spin-coat or stick a layer of receiving glue on the temporary carrier 700. The material of the temporary carrier 700 is selected from one of glass, sapphire, diamond, and PCB. The receiving glue is selected from one or more of silicone, epoxy, and polyimide.

[0047] 1.2) The RGB chips are transferred to the temporary carrier 700 by laser stripping to remove the sapphire substrate of the microchip. The laser wavelength is in the range of 193nm to 265nm.

[0048] More preferably, during the transfer of the RGB three-color chips, for example, the B blue chip, after the first chip 200 is transferred at the first position using a laser, it will then jump to the fourth position to transfer the second blue chip 200, and then jump to the seventh position to transfer the third chip 200, and so on. The green light chip 200 is at the 2nd, 5th, and 8th positions, and the red light is at the 3rd, 6th, and 9th positions. In this way, the chip 200 of each light color in the RGB three-color chip is transferred to a different position, so there will be no interference between the chip 200 to be transferred and the chip 200 on the liner.

[0049] 1.3) Spin-coat or paste a layer of adhesive on the support substrate 100. The material of the support substrate 100 is selected from one of glass, sapphire, diamond, and PCB. The adhesive is selected from one or more of silicone, epoxy, and polyimide. Turn over the temporary carrier 700, and use laser mass transfer or stamp transfer to peel off the RGB microchip on the carrier three times, and transfer it to the support substrate 100, and ensure that the electrode of the chip 200 faces upward.

[0050] (2) preparing a flat layer 300 on the support substrate 100, wherein the flat layer 300 is filled around the chip 200, and in the vertical direction, the top surface of the flat layer 300 is flush with the top surface of the electrode;

[0051] In some embodiments, the planar layer 300 is made of a photosensitive material, and the photosensitive material includes one or more of photoresist, polyimide, and epoxy resin.

[0052] In some embodiments, the planar layer 300 is cured by the following method:

[0053] The baking is carried out in a nitrogen atmosphere, the baking temperature is 100° C. to 400° C., and the baking time is 10 min to 120 min.

[0054] Preferably, a flat layer 300 is made on the surface of the supporting substrate 100 by spin coating, so that the chip edge area is flush with the electrode of the chip 200, to prevent the subsequent fan-out electrode metal from breaking due to the large height difference between the electrode height of the chip 200 and the edge area. The flat layer 300 material directly above the chip 200 electrode is removed by exposure and development, and is fully baked in an oven under a nitrogen atmosphere at a temperature of 150°C to 350°C for 60min to 90min to achieve the curing of the flat layer 300 material and improve the passivation insulation performance.

[0055] (3) preparing a cathode fan-out electrode 410 and an anode fan-out electrode 420 on the cathode 210 and the anode 220, respectively, and providing a spacing region 430 between the cathode fan-out electrode 410 and the anode fan-out electrode 420;

[0056] In some embodiments, the cathode fan-out electrode 410 and the anode fan-out electrode 420 both include one or more of Ti, Ni, Co, Sn, Cu, Au, Pt, Cr, and In.

[0057] Preferably, cathode fan-out electrode 410 and anode fan-out electrode 420 are deposited by evaporation or sputtering, and cathode fan-out electrode 410 and anode fan-out electrode 420 both include one or more of Sn, Cu, Au, Pt, Cr, and In, and laminated metal deposition is used to eliminate internal stress between metals. The electrode of the microchip is led out to the edge of the packaged device through the structure of the fan-out electrode.

[0058] In some embodiments, the chip 200 includes a red chip, a green chip, and a blue chip.

[0059] Preferably, the red chip includes an R cathode and an R anode, the green chip includes a G cathode and a G anode, and the blue chip includes a B cathode and a B anode;

[0060] An R cathode fan-out electrode and an R anode fan-out electrode are respectively prepared on the R cathode and the R anode, a G cathode fan-out electrode and a G anode fan-out electrode are respectively prepared on the G cathode and the G anode, and a B cathode fan-out electrode and a B anode fan-out electrode are respectively prepared on the B cathode and the B anode;

[0061] The R cathode, the G cathode, and the B cathode are connected, or the R anode, the G anode, and the B anode are connected.

[0062] like Figure 7 As shown, in a preferred embodiment, the cathodes 210 or anodes 220 of all chips 200 are connected together by circuit interconnection to form a common cathode or common anode structure. At the same time, the electrodes of the remaining chips 200 are respectively led out to different positions above the flat layer 300 by evaporation or sputtering, so as to form an integrated array of micro LED chips 200 by common cathode or common anode. Therefore, any number of chips 200 can be integrated together, thereby greatly improving the matching of different display application scenarios. The advantage of this technology is that multiple LED chips can be integrated together to meet the needs of different display applications. Through the design of a common cathode or common anode structure, the circuit interconnection of the array can be flexibly controlled to optimize its electrical performance and display effect. In this way, the adaptability of the LED array in different display application scenarios can be greatly improved, and its compatibility and efficiency can be enhanced.

[0063] (4) preparing an isolation layer 500 on the flat layer 300, wherein the isolation layer 500 fills the spacing area 430, and the thickness of the isolation layer 500 is greater than the thickness of the cathode fan-out electrode 410 or the anode fan-out electrode 420, so as to form a blank area 510 above the cathode fan-out electrode 410 and the anode fan-out electrode 420;

[0064] In some embodiments, the isolation layer 500 is made of a photosensitive material, and the photosensitive material includes one or more of photoresist, polyimide, and epoxy resin.

[0065] In some embodiments, the isolation layer 500 is cured by the following method:

[0066] The baking is carried out in a nitrogen atmosphere, the baking temperature is 100° C. to 400° C., and the baking time is 10 min to 120 min.

[0067] Preferably, a layer of isolation layer 500 is coated on the fan-out electrode by spin coating, and the isolation layer 500 material directly above the chip 200 electrode is removed by exposure and development, and the isolation layer 500 material is fully baked in an oven under a nitrogen atmosphere to achieve curing of the isolation layer 500 material. The curing ambient temperature and curing time are consistent with the curing steps of the above-mentioned flat layer 300 to improve the passivation insulation performance. The isolation layer 500 and the flat layer 300 materials may be the same or different. It is preferred to choose the same material to reduce the reliability problems caused by the difference in thermal expansion coefficients of different materials.

[0068] (5) A cathode layer 610 and an anode layer 620 are respectively prepared on the cathode fan-out electrode 410 and the anode fan-out electrode 420, and the cathode layer 610 and the anode layer 620 fill the blank area 510. In the vertical direction, the top surface of the cathode layer 610 or the anode layer 620 is not lower than the top surface of the isolation layer 500.

[0069] In some embodiments, the cathode layer 610 and the anode layer 620 both include one or more of Ti, Ni, Co, Sn, Cu, Au, Pt, Cr, and In.

[0070] Preferably, a cathode layer 610 and an anode layer 620 are deposited on the cathode fan-out electrode 410 and the anode fan-out electrode 420, and the cathode layer 610 and the anode layer 620 both include one or more of Cu, Au, Pt, Cr, and In, and electroplating photolithography patterning is formed by photoresist coating, the electrode area to be electroplated is exposed, and other areas are protected by photoresist. The thick electrode layer is electroplated in the electroplating solution by electroplating.

[0071] In some embodiments, after step (5), the method further includes: using a cutter wheel to cut the structure above the support substrate 100 to prevent the high temperature generated by the laser from damaging the structure of the device during subsequent laser cutting, and then using laser cutting to cut the hard support substrate 100 to separate the structure of the entire device or module. Use a multi-needle point measuring machine to test a single device or multiple device modules separately, and use sorting.

[0072] Correspondingly, the present invention also provides a Micro LED module, and the Micro LED module is manufactured by the preparation method of the Micro LED module as described above.

[0073] In summary, the preparation method of the Micro LED module provided by the present invention uses a two-layer passivation protection structure of a flat layer 300 and an isolation layer 500 to realize that the electrodes of the micro LED chip 200 are led out from the surface of the chip 200 to the surrounding area, thereby achieving the effect of amplifying the electrodes of the micro chip around, solving the problem of high precision requirements, low transfer yield, and large yield loss in the transfer process caused by the small size of the electrodes of the micro chip, greatly simplifying the application requirements, and reducing the manufacturing cost of the subsequent packaging patch. At the same time, a flat layer 300 is made on the surface of the supporting substrate 100 to make the edge area of ​​the chip flush with the electrode of the chip 200, thereby achieving a flattening effect, and preventing the subsequent fan-out electrode metal from breaking due to the large difference between the height of the chip 200 electrode and the height of the edge area.

[0074] Furthermore, the present invention only needs to use three steps of photolithography to realize the electrode fan-out and wiring of microchips and modules, with simple process and low cost, and is suitable for large-scale mass production needs.

[0075] The present invention leads the electrodes of the microchip to the edge of the packaged device through the structure of the fan-out electrode. It can further use the circuit interconnection method to connect the cathodes 210 or anodes 220 of all chips 200 together to form a common cathode or common anode structure. Then, the electrodes of the remaining chips 200 are respectively led out to different positions above the flat layer 300 by evaporation or sputtering, so as to form an integrated array of micro LED chips 200 by common cathode or common anode. Therefore, any number of chips 200 can be integrated together, thereby greatly improving the compatibility with different display application scenarios.

[0076] In the description of this specification, the description with reference to the terms "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiments or examples are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0077] The above is a preferred embodiment of the invention. It should be pointed out that a person skilled in the art can make several improvements and modifications without departing from the principle of the invention. These improvements and modifications are also considered to be within the scope of protection of the invention.

Claims

1. A method for preparing a Micro LED module, characterized in that: The following steps are involved: Providing a supporting substrate, on which a plurality of chips are arranged, wherein the chips include electrodes, the electrodes include a cathode and an anode, and the electrodes are arranged in a direction away from the supporting substrate; Preparing a flat layer on the supporting substrate, wherein the flat layer fills around the chip, and in the vertical direction, the top surface of the flat layer is flush with the top surface of the electrode; A cathode fan-out electrode and an anode fan-out electrode are respectively prepared on the cathode and the anode, and a spacing area is provided between the cathode fan-out electrode and the anode fan-out electrode; Preparing an isolation layer on the flat layer, the isolation layer filling the spacing area, the thickness of the isolation layer being greater than the thickness of the cathode fan-out electrode or the anode fan-out electrode, so as to form a blank area above the cathode fan-out electrode and the anode fan-out electrode; A cathode layer and an anode layer are respectively prepared on the cathode fan-out electrode and the anode fan-out electrode, and the cathode layer and the anode layer fill the blank area. In the vertical direction, the top surface of the cathode layer or the anode layer is not lower than the top surface of the isolation layer.

2. The method for preparing a Micro LED module according to claim 1, wherein: The planar layer is made of photosensitive material, and the photosensitive material includes one or more of photoresist, polyimide, and epoxy resin.

3. The method for preparing a Micro LED module according to claim 1, wherein: The cathode fan-out electrode and the anode fan-out electrode both include one or more of Ti, Ni, Co, Sn, Cu, Au, Pt, Cr, and In.

4. The method for preparing a Micro LED module according to claim 1, wherein: The isolation layer is made of photosensitive material, and the photosensitive material includes one or more of photoresist, polyimide, and epoxy resin.

5. The method for preparing a Micro LED module according to claim 1, wherein: The cathode layer and the anode layer both include one or more of Ti, Ni, Co, Sn, Cu, Au, Pt, Cr, and In.

6. The method for preparing a Micro LED module according to claim 2 or 4, wherein: The flat layer or the isolation layer is cured by the following method: The baking is carried out in a nitrogen atmosphere, the baking temperature is 100° C. to 400° C., and the baking time is 10 min to 120 min.

7. The method for preparing a Micro LED module according to claim 1, wherein: The electrode is arranged in a direction away from the supporting substrate by the following method: The chip is peeled off from the chip substrate and the chip is transferred to a temporary carrier, the electrode of the chip is bonded to the temporary carrier, the temporary carrier is flipped over, the electrode of the chip is peeled off from the temporary carrier and the chip is transferred to a supporting substrate, so that the electrode is arranged in a direction away from the supporting substrate.

8. The method for preparing a Micro LED module according to claim 1, wherein: The chips include a red chip, a green chip and a blue chip.

9. The method for preparing a Micro LED module according to claim 8, wherein: The red chip includes an R cathode and an R anode, the green chip includes a G cathode and a G anode, and the blue chip includes a B cathode and a B anode; An R cathode fan-out electrode and an R anode fan-out electrode are respectively prepared on the R cathode and the R anode, a G cathode fan-out electrode and a G anode fan-out electrode are respectively prepared on the G cathode and the G anode, and a B cathode fan-out electrode and a B anode fan-out electrode are respectively prepared on the B cathode and the B anode; The R cathode, the G cathode, and the B cathode are connected, or the R anode, the G anode, and the B anode are connected.

10. A Micro LED module, characterized in that: The Micro LED module is manufactured by the method for manufacturing a Micro LED module according to any one of claims 1 to 9.

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