Perovskite / silicon laminated solar cell and manufacturing method of localized conducting layer

Abstract

The invention belongs to the technical field of photovoltaics, the technical field of lasers and the technical field of precision machining, and particularly relates to a perovskite / silicon laminated solar cell and a manufacturing method of a localized conducting layer. The invention discloses a manufacturing method of a perovskite / silicon laminated solar cell and a localized conducting layer. The method comprises the following steps of: selecting a crystalline silicon cell of which the surface is covered with a dielectric hydrogen injection passivation layer; ablating the first hydrogen injection passivation layer on the front surface of the crystalline silicon cell by using laser until the conductive polycrystalline silicon layer below is exposed; carrying out annealing treatment according to the passivation reduction amplitude after laser treatment, and preparing an interface conducting layer and carrying out annealing treatment; and performing subsequent processing. In the manufacturing process of the perovskite / silicon laminated solar cell, the cell performance is improved, high passivation is reserved, and carrier transmission is optimized; the cost is reduced, the process is simplified, and equipment consumables are reduced; the process flexibility and compatibility are enhanced, the product quality and stability are improved, and large-scale production is facilitated.

Description

Technical Field

[0001] The present invention belongs to the fields of “photovoltaic technology”, “laser technology” and “precision machining technology”, and specifically relates to a method for manufacturing a perovskite / silicon stacked solar cell and a localized conductive layer. Background Art

[0002] Having a higher conversion efficiency than single-cell crystalline silicon solar cells is one of the important development directions of future photovoltaic technology. Among crystalline silicon solar cells, crystalline silicon solar cells with tunneling oxide passivation contact structure (TOPCon) have become the mainstream products in the current photovoltaic market due to their high efficiency, low cost and suitability for mass production.

[0003] The production process of perovskite / TOPCon tandem solar cells is relatively complicated. The main steps include the production of TOPCon bottom cells, the removal of the first dielectric hydrogen injection passivation layer (front hydrogen injection passivation layer) in the bottom cell, the preparation of the interface conductive layer, and the production of perovskite top cells. TOPCon bottom cells usually need to be covered with a single or multi-layer dielectric hydrogen injection passivation film on the surface to improve the passivation effect on the bottom cell by releasing hydrogen, thereby improving the cell performance. However, the tandem cell requires a series structure between the two sub-cells, which requires good ohmic contact between the top layer of the bottom cell and the interface conductive layer, and between the interface conductive layer and the bottom layer of the top cell. Therefore, the hydrogen injection passivation layer on the front of the bottom cell must be removed to expose the conductive silicon on the top layer.

[0004] At the same time, in order to improve the performance of the stacked cell, it is necessary to suppress the transmission of carriers generated in the illuminated area to the non-illuminated area and edge to avoid invalid recombination. Therefore, the dielectric first hydrogen injection passivation layer should be retained around the illuminated area to constrain the transmission path of the photogenerated carriers, thereby improving the open circuit voltage and fill factor of the stacked cell. However, the common method of removing the front hydrogen injection passivation layer currently has many problems. For example, after covering the back, edge and front non-illuminated areas of the bottom cell with various corrosion-resistant materials, the bottom cell is immersed in an acidic solution to dissolve the hydrogen injection passivation layer in the front illuminated area, and then cleaned and the additional protective layer is removed. This method has disadvantages in terms of protection, consumables, equipment, and waste disposal. In terms of protection, the protective film used does not completely cover the hydrogen injection passivation layer in the non-illuminated area and the edge. The passivation layer in the non-illuminated area and the edge will be damaged when the solution is immersed. When removing the additional protective layer, the hydrogen injection passivation layer or the metal electrode may be pulled off, resulting in a significant decrease in the passivation of the bottom battery and serious leakage. In terms of consumables, it involves expensive and toxic and harmful chemicals such as photoresist, developer, hydrofluoric acid, acetone, and 3M tape. In terms of equipment, it requires equipment such as spin coaters, hot stages, photolithography machines, and yellow light chambers, and the initial investment is large. In terms of waste treatment, the collection, neutralization, dilution, and harmless treatment of toxic and harmful chemicals are difficult and costly. These problems result in poor performance, high cost, and low flow rate of existing technologies, making it difficult to meet the needs of mass production.

[0005] Laser ablation technology has certain applications in crystalline silicon solar cells with PERC structure and its derivative structures. It is mainly used to ablate single or multi-layer passivation protection layers on the surface to form channels or openings, so that the conductive silicon at the bottom of the channels or openings forms ohmic contact with the metal to achieve the extraction and transmission of photogenerated carriers. However, there are no patents or literature reports on the application of laser ablation technology to the local removal of the first hydrogen injection passivation layer of the bottom cell. Summary of the invention

[0006] The purpose of the present invention is to provide a method for manufacturing a perovskite / silicon tandem solar cell and a localized conductive layer to solve the problems in the above-mentioned background technology.

[0007] A method for manufacturing a perovskite / silicon tandem solar cell and a localized conductive layer, the method comprising:

[0008] Step S1, selecting a crystalline silicon cell with a dielectric hydrogen implantation passivation layer on its surface;

[0009] Step S2, using a laser to ablate the first hydrogen injection passivation layer on the front side of the crystalline silicon cell until the conductive polysilicon layer underneath is exposed;

[0010] Step S3, performing annealing treatment according to the degree of passivation reduction after laser treatment;

[0011] Step S4, preparation and annealing of the interface conductive layer;

[0012] Step S5, subsequent processing.

[0013] Preferably, the types of crystalline silicon cells covered with a dielectric hydrogen injection passivation layer on the surface in step S1 are selected from: crystalline silicon solar cells with n-type silicon substrate, p-type silicon substrate, one-side n-type TOPCon structure, p-type TOPCon structure, double-sided TOPCon structure, double-sided flat, one-side velvet surface and the other side flat, and double-sided velvet surface.

[0014] Preferably, the laser in step S2 is an ultraviolet picosecond laser with a wavelength of 190-450nm and a pulse width of less than 100ps.

[0015] Preferably, the power of the laser is 10-100 W, and the internal control frequency is 100-10000 kHz.

[0016] As a preference, the spot area range is 1-10000um 2 The ratio of the laser irradiation area to the front illumination area is 1-100%.

[0017] Preferably, the annealing treatment in step S3 is carried out in air at a temperature of 800° C. and a holding time of 100 seconds.

[0018] Preferably, the method for preparing the interface conductive layer in step S4 is selected from: magnetron sputtering, thermal evaporation, electron beam evaporation, spin coating, spray coating or doctor blade coating.

[0019] Preferably, if the annealing treatments in step S3 and step S4 are the same, they can be combined into step S4 for annealing treatment.

[0020] Compared with the prior art, the present invention has the following beneficial effects:

[0021] 1. Improved battery performance

[0022] High passivation retention: The front hydrogen-implanted passivation layer is locally ablated and removed by laser, while the passivation layer in the remaining positions is retained, and more passivation can be restored after annealing, effectively retaining the high passivation characteristics of the TOPCon battery in the stacked battery, reducing the damage to the passivation of the bottom battery in subsequent processing steps, thereby improving the overall performance of the battery.

[0023] Carrier transport optimization: The specific opening array formed by laser ablation technology can constrain carriers to directly enter the interface conductive layer and the top cell from the first polysilicon layer of the bottom cell, reducing the loss of carriers in the transmission process, helping to improve the photoelectric conversion efficiency of the cell, and at the same time facilitating the further expansion of the cell area, overcoming the problem in the prior art that carriers can easily enter the non-illuminated area laterally and cause unexpected loads at the edge, resulting in reduced voltage and fill factor of the stacked cell.

[0024] 2. Cost reduction and production efficiency improvement

[0025] Simplified processing flow: The complicated method of removing the front hydrogen injection passivation layer in the existing technology is abandoned, such as covering the additional protective layer-solution immersion-removing the additional protective layer. It can be achieved only by using laser ablation technology, which greatly shortens the processing flow, reduces the processing links, and improves production efficiency.

[0026] Reduce investment in equipment and consumables: No need to use complex equipment such as spin coaters, hot stages, photolithography machines, yellow light chambers, and expensive and toxic chemicals such as photoresists, developers, hydrofluoric acid, acetone, and 3M tapes, which reduces initial equipment investment and consumables costs. Only laser ablation systems are needed, which are simple in equipment and easy to operate, reducing the requirements for the production environment.

[0027] Easy to mass produce: Laser ablation is fast, time-saving, and can be paced. It is easily compatible with existing production lines and can be processed on an assembly line. It has a large output and effectively reduces the manufacturing cost of a single piece. It is conducive to the large-scale mass production of stacked solar cells and improves the market competitiveness of the product.

[0028] 3. Enhanced process flexibility and compatibility

[0029] Compatible with upstream and downstream battery structures: There is no special restriction on the front structure of the upstream TOPCon battery, which has a high degree of compatibility and is applicable to all surface structures (double-sided flat, one flat and one velvet, double-sided velvet), TOPCon structure (single-sided or double-sided), and the first hydrogen injection passivation layer structure (single-layer or multi-layer). There is no restriction on the downstream top battery structure, which is conducive to the integration of different technologies and provides possibilities for the diversified design and development of tandem solar cells.

[0030] Laser parameters are flexible and controllable: Parameters such as laser intensity, wavelength, spot shape, size, distribution and ablation depth can be precisely controlled. Not only can the processing of hole arrays of different depths, shapes and densities be realized according to actual needs to meet diverse process requirements, but also these parameters can be adjusted to control the residual state of the first hydrogen injection passivation layer of the bottom cell, thereby regulating the degree of passivation recovery after annealing, making the process more flexible and controllable.

[0031] 4. Improve product quality and stability

[0032] Preventing leakage: The hydrogen injection passivation layer at the edge is retained after ablation, which effectively prevents the carrier transport layer under the top battery from contacting the edge of the bottom battery, thereby suppressing the occurrence of leakage, increasing the filling factor of the stacked battery, and improving the quality and stability of the product.

[0033] The process has strong scalability: the central ablation parameters are the same as the peripheral ablation parameters, which makes the process scale-up from small-area battery test samples to large-area production line batteries simpler and more reliable, ensuring the consistency and stability of the product under different scales of production, which is conducive to the large-scale promotion and application of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0035] Figure 1 This is a schematic diagram of the common TOPCon bottom battery structure;

[0036] Figure 2 This is a schematic diagram of the bottom battery structure after laser local ablation of the first hydrogen injection passivation layer;

[0037] Figure 3 It is a schematic diagram of the structure after preparing the interface conductive layer;

[0038] Figure 4 Schematic diagram of the structure of a tandem solar cell. DETAILED DESCRIPTION

[0039] The following will be combined with the accompanying drawings in the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work belong to the protection scope of the present invention.

[0040] The following is combined with Figure 1 To Attachment Figure 4 And specific embodiments, the present invention is described in detail:

[0041] like Figures 1 to 4 As shown, the purpose of the present invention is to provide a method for manufacturing a perovskite / silicon tandem solar cell and a localized conductive layer.

[0042] The purpose of the present invention is achieved through the following technical solutions:

[0043] Example:

[0044] 1. TOPCon bottom battery preparation stage

[0045] Bottom battery type selection: This example selects the common TOPCon bottom battery, such as Figure 1 As shown, the side containing the TOPCon structure is the front side, and the side containing the metal electrode is the back side. From top to bottom, they are the first hydrogen injection passivation layer (front hydrogen injection passivation layer), n-type (or p-type) first polysilicon layer, tunneling silicon oxide layer, n-type (or p-type) single crystal silicon substrate, p-type (or n-type) emitter layer, second hydrogen injection passivation layer (back hydrogen injection passivation layer), and back metal electrode.

[0046] The TOPCon bottom cells involved in the present invention have various types, including crystalline silicon solar cells with n-type (or p-type) silicon substrate and one side with n-type (or p-type) TOPCon structure, double-sided TOPCon structure, double-sided flat surface, one side with velvet surface and the other side with velvet surface, and double-sided flat surface. These different types of bottom cells provide a basis for the diversified design of tandem solar cells.

[0047] 2. Laser ablation

[0048] Laser selection: Use an ultraviolet picosecond laser with a wavelength of 190-450nm and a pulse width of less than 100ps. Lasers in this wavelength range can effectively interact with the dielectric material on the surface of the bottom battery to achieve precise ablation of the first hydrogen injection passivation layer. For example, when the passivation layer is thin and the ablation accuracy is high, a laser with a wavelength close to 190nm can be selected to increase the energy density and achieve a finer ablation effect; for thicker passivation layers or when large-area rapid ablation is required, the wavelength can be appropriately increased and other parameters can be adjusted to balance ablation efficiency and accuracy.

[0049] Power and frequency control: The power of the laser and the internal control frequency are set to 10-100W and 100-10000kHz according to the specific ablation depth. The adjustment of power directly affects the ablation depth. Lower power can achieve shallow ablation, which is suitable for situations where only partial removal of the passivation layer is required to expose a small amount of conductive silicon; higher power can be used for deep ablation to quickly remove thicker passivation layers. Changes in the internal control frequency will affect the repetition rate of the laser pulse, thereby affecting the uniformity and efficiency of ablation. For example, when ablating small-area, high-precision graphics, a higher frequency can be selected to obtain a more delicate ablation effect; when ablating a large area, appropriately reducing the frequency can increase the overall processing speed.

[0050] Spot shape, size and distribution design: The spot shape can be square, rectangular and circular, etc. The spot area range is 1-10000um 2 , the ratio of the area of ​​the laser irradiation area to the area of ​​the front illumination area is 1-100%. The choice of spot shape depends on the design ablation pattern requirements. Square and rectangular spots can be used to create regular lines or rectangular opening patterns, which are suitable for specific carrier transmission path designs; circular spots are more suitable for creating circular or nearly circular openings, such as when it is necessary to simulate the irradiation effect of a point light source or to achieve uniformly distributed local ablation. Adjustment of the spot area and distribution can accurately control the size and shape of the ablation area, achieve different degrees of passivation layer removal, and thus affect the carrier transmission path and battery performance. For example, by designing a smaller spot area and a specific distribution method, a fine array of openings can be formed on the surface of the bottom battery, accurately guiding carriers from specific locations into the interface conductive layer, and improving the photoelectric conversion efficiency of the battery.

[0051] The galvanometer speed and external control frequency are coordinated: the galvanometer speed and external control frequency are set to 1-100m / s and 100-10000kHz according to the ratio of the laser irradiation area to the front illumination area. The galvanometer speed determines the scanning speed of the laser on the surface of the bottom battery, and together with the external control frequency, it affects the coverage and uniformity of ablation. When ablating a large area, the galvanometer speed can be appropriately increased and matched with a suitable external control frequency to achieve fast and uniform ablation; when processing small areas and high-precision areas, the galvanometer speed is reduced and the external control frequency is adjusted to ensure that each ablation point can be precisely controlled.

[0052] (2) Ablation process details

[0053] The TOPCon bottom cell front side (first hydrogen injection passivation layer) is placed upwards and accurately transferred to the bottom of the laser by an automated conveying system. The first hydrogen injection passivation layer is ablated according to the pre-designed pattern to remove the dielectric hydrogen injection passivation layer at the laser irradiation position, exposing the conductive polysilicon layer below and forming several ablation holes. The schematic diagram of the ablation process is shown in the figure below. Figure 2 shown.

[0054] Design graphics can be generated through computer-aided design (CAD) software and imported into the laser ablation control system. The control system accurately controls the laser scanning path and ablation time according to the set parameters to achieve accurate removal of the passivation layer. During the ablation process, parameters such as laser power and spot position are monitored in real time to ensure the stability and accuracy of the ablation process.

[0055] The ablation depth of a single hole is controlled by adjusting parameters such as laser power and pulse. In actual operation, online monitoring equipment, such as optical microscope or laser confocal microscope, can be used to observe the depth change of the hole in real time during the ablation process. Laser parameters are adjusted in time according to the monitoring results to ensure that the ablation depth reaches the expected target. At the same time, a mathematical model between ablation depth and laser parameters is established to provide a reference for actual ablation operation through pre-calculation and simulation, thereby improving the accuracy and efficiency of ablation depth control.

[0056] 3. Annealing treatment operation and considerations

[0057] Necessity of annealing assessment: After the laser ablation treatment is completed, the passivation reduction of the bottom cell is first evaluated. This assessment can be achieved through a variety of testing methods, such as measuring the key performance parameters of the battery such as open circuit voltage, short circuit current, fill factor, and comparing with reference cells that have not been laser ablated. If the change in these parameters is within an acceptable range, it means that the laser treatment has little effect on passivation, and the annealing process can be skipped and the next process can be directly entered to save time and energy costs; if the parameter changes greatly and exceeds the predetermined acceptable range, annealing is required to repair the passivation damage.

[0058] The bottom cell after laser ablation is transferred into an annealing furnace for annealing treatment.

[0059] Annealing treatment methods include rapid thermal annealing (RTA), tube furnace annealing, belt furnace annealing, etc. Rapid thermal annealing has the characteristics of fast heating speed and short processing time. It is suitable for large-scale production with high efficiency requirements. It can achieve relaxation of polysilicon and hydrogen release of hydrogen injection passivation layer in a short time; tube furnace annealing can provide a more uniform temperature field, which is suitable for products with high annealing uniformity requirements, and can effectively avoid the problem of uneven battery performance caused by local overheating or overcooling; belt furnace annealing can achieve continuous production, which is suitable for automated production lines and improves production efficiency. In practical applications, the appropriate annealing method can be selected according to the production scale, equipment conditions and product performance requirements.

[0060] The annealing atmosphere is air, inert gas or vacuum, the annealing temperature is 100-1000°C, and the insulation time is 1-5000s.

[0061] Parameters such as annealing temperature, holding time, furnace atmosphere, etc. can be set according to specific goals. For example, when it is necessary to quickly repair passivation damage and promote hydrogen release, a higher annealing temperature, such as 800°C, can be selected, and the holding time can be appropriately shortened, such as 100s; and when the stability of the battery structure is required to be high, the annealing temperature can be lowered, the holding time can be extended, and a suitable furnace atmosphere, such as a mixed atmosphere of nitrogen and hydrogen, can be selected to control the redox reaction and protect the battery structure. By precisely adjusting these parameters, optimal control of polysilicon relaxation, hydrogen release, and passivation repair can be achieved to ensure that the bottom battery performance is effectively restored.

[0062] 4. Preparation and annealing process of interface conductive layer

[0063] The interface conductive layer is prepared by magnetron sputtering, which uses high-energy argon ions to bombard the interface conductive layer target, release the interface conductive layer material particles, and deposit them on the front of the bottom battery (above the first hydrogen injection passivation layer). There is a baffle between the target and the front of the bottom battery, which can limit the deposition area to the illuminated area or equal to the illuminated area. The RF power is 80W, the chamber temperature is room temperature, the chamber pressure is 50mTorr, the argon flow rate is 500sccm, and the deposition is 180s. The structure after preparing the interface conductive layer is as follows Figure 3 shown.

[0064] Principle and release of material particles: When the interface conductive layer is prepared by magnetron sputtering, high-energy argon ions are accelerated to bombard the interface conductive layer target under the action of the electric field. The target atoms obtain enough energy under the ion bombardment to overcome the surface binding force and escape to become material particles. Under the joint action of the electric field and the magnetic field, these particles are deposited on the front of the bottom battery (above the first hydrogen injection passivation layer) along a specific trajectory. In this process, factors such as argon flow rate, gas pressure, and the distance between the target and the bottom battery will affect the sputtering rate and deposition effect of the material particles. For example, appropriately increasing the argon flow rate can increase the degree of ionization and thus increase the sputtering rate, but too high a flow rate may cause particle scattering and affect the deposition uniformity; reasonably adjusting the distance between the target and the bottom battery can control the energy and deposition angle of the particles and optimize the structure and performance of the interface conductive layer.

[0065] Deposition area control: A baffle is set between the target and the front of the bottom cell to limit the deposition area to the illuminated area or make it equal to the illuminated area. The shape, size and position of the baffle need to be precisely designed to ensure that the conductive layer material is deposited only in the required area. By adjusting the parameters of the baffle, deposition areas of different shapes and sizes can be achieved to meet the diverse battery design requirements. For example, for illumination areas of special shapes or areas where local enhanced conductivity is required, baffles of corresponding shapes can be customized to achieve precise deposition.

[0066] Effect of parameter setting on the quality of the interface conductive layer

[0067] RF power and deposition rate: RF power is one of the key parameters that affect the magnetron sputtering process. Higher RF power can provide stronger ion bombardment energy, thereby increasing the sputtering rate of material particles and accelerating the deposition rate of the interface conductive layer. However, too high power may cause overheating of the target material and excessive particle energy, affecting the quality and structural uniformity of the deposited layer. Therefore, it is necessary to reasonably select the RF power based on factors such as the characteristics of the target material, the required thickness of the conductive layer, and equipment conditions. For example, for the requirement of a thinner conductive layer, a relatively low RF power can be selected to obtain a more uniform and dense deposited layer; when a thicker conductive layer needs to be prepared quickly, the power can be appropriately increased within the range allowed by the equipment and optimized in combination with other parameters.

[0068] Chamber temperature and pressure control: Chamber temperature and pressure have an important influence on the movement trajectory of material particles, deposition rate and bonding effect with the bottom battery surface. Room temperature conditions are usually conducive to maintaining the stability of the equipment and the convenience of operation, but under certain special materials or process requirements, the chamber may need to be heated or cooled to optimize the deposition process. The adjustment of the chamber pressure mainly affects the mean free path of argon ions and the stability of the sputtering process. The appropriate pressure range can ensure that the ions are effectively accelerated and bombard the target under the action of the electric field, while ensuring that the sputtered material particles can be smoothly deposited on the bottom battery surface. For example, a lower chamber pressure can increase the mean free path of ions and increase the energy of ions bombarding the target, but may lead to increased particle scattering; higher pressures will cause frequent ion collisions, reduce ion energy and sputtering rate, and need to be weighed and optimized according to specific circumstances.

[0069] Argon flow rate and deposition environment stability: The argon flow rate directly determines the concentration and ionization degree of the argon gas in the chamber. A stable argon flow rate is essential to maintaining the stability of the sputtering process. A flow rate that is too slow may reduce the ionization efficiency and affect the sputtering effect; a flow rate that is too fast may cause airflow turbulence, interfere with the deposition trajectory of the particles, and cause an uneven deposition layer. Therefore, it is necessary to precisely control the argon flow rate and combine it with other parameters, such as RF power, chamber pressure, etc., to create a stable deposition environment and ensure the quality and performance of the interface conductive layer.

[0070] The interface conductive layer can also be prepared by thermal evaporation, electron beam evaporation, spin coating, spray coating or blade coating.

[0071] After the interface conductive layer is prepared, annealing treatment is performed to repair the passivation of the interface conductive layer and the bottom battery.

[0072] If the annealing process in this step is the same as the annealing process in the previous step, the annealing process in the previous step can be omitted and merged into the annealing process in this step.

[0073] Damage mechanism and repair requirements: During magnetron sputtering, high-energy ion bombardment and particle deposition will cause a certain degree of damage to the passivation layer on the surface of the bottom battery, resulting in a decrease in the passivation effect. Therefore, annealing is required after deposition to restore passivation. During the annealing process, heating is used to rearrange the atoms inside the bottom battery, promote the release of hydrogen from the hydrogen-injected passivation layer, repair the defects of the passivation layer, and also help improve the interface bonding state between the interface conductive layer and the bottom battery, thereby improving the overall performance of the battery.

[0074] Parameter optimization and synergy: The selection of parameters such as annealing temperature, holding time and furnace atmosphere needs to comprehensively consider the material properties of the interface conductive layer, the structure and performance requirements of the bottom cell and the previous processing technology. The appropriate annealing temperature can activate the diffusion and chemical reaction of atoms, promote passivation repair and interface bonding; the holding time determines the full extent of atomic rearrangement and reaction; the selection of furnace atmosphere can control the redox reaction and prevent the interface conductive layer and the bottom cell from being oxidized or otherwise adversely affected during the annealing process. For example, in some cases, the selection of hydrogen atmosphere can further promote hydrogen replenishment of the hydrogen-implanted passivation layer and enhance the passivation effect; and in cases where it is necessary to prevent oxidation of the conductive layer, an inert gas atmosphere such as nitrogen or argon can be used. By optimizing these parameters, good bonding between the interface conductive layer and the bottom cell and effective repair of the passivation layer can be achieved, thereby improving the performance and stability of the tandem solar cell.

[0075] 5. Subsequent top cell production and tandem solar cell integration

[0076] The top cell is made in accordance with conventional processes: after the preparation of the interface conductive layer and annealing treatment (if any) are completed, the bottom cell is subjected to subsequent perovskite top cell production. The present invention does not modify the subsequent top cell production process and operates in accordance with the existing mature process. This includes the preparation and deposition of perovskite materials, and the construction of various functional layers of the top cell (such as electron transport layer, hole transport layer, etc.). In the process of making the top cell, it is necessary to ensure the quality and thickness uniformity of each layer of material, and strictly control the preparation process parameters, such as deposition rate, temperature, humidity, etc., to ensure that the performance of the top cell meets the requirements. For example, the crystallization quality of the perovskite material has an important influence on the photoelectric conversion efficiency of the top cell, and it is necessary to obtain high-quality perovskite films by optimizing the preparation process, such as the parameters of solution spin coating or vapor deposition.

[0077] Tandem solar cell structure integration and performance optimization: The prepared top cell is integrated with the bottom cell with an interface conductive layer to form a complete perovskite / silicon tandem solar cell. During the integration process, special attention should be paid to the interface contact quality between the components to ensure that the interface conductive layer can effectively realize the series connection between the bottom cell and the top cell, reduce the interface resistance, and improve the carrier transfer efficiency. At the same time, the performance of the entire tandem solar cell is tested and optimized, including adjusting the thickness of each layer, optimizing the material composition, etc., to achieve the best performance indicators such as photoelectric conversion efficiency, open circuit voltage, short circuit current and fill factor. For example, through simulation calculations and experimental tests, the optimal matching thickness between the top cell and the bottom cell is determined, so that the entire tandem cell can achieve efficient light absorption and carrier generation and transmission in different spectral ranges, thereby improving the overall performance of the cell.

[0078] The structure of a tandem solar cell is as follows Figure 4 shown.

[0079] In summary, the present invention provides a complete and feasible technical solution for the efficient, stable and low-cost manufacturing of perovskite / silicon tandem solar cells by elaborating on the specific implementation methods of each process step, including the selection and preparation of TOPCon bottom cells, precise control of laser ablation treatment, flexible operation of annealing treatment, optimization of interface conductive layer preparation and annealing, and subsequent top cell production and integration. The various parameters and operating points in these implementation methods can be flexibly adjusted according to actual production needs and product performance targets, ensuring the applicability and effectiveness of the present invention in different application scenarios, and laying a solid foundation for promoting the industrialization of tandem solar cell technology.

[0080] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited by the above embodiments. The above embodiments and descriptions are only optional examples of the present invention and are not intended to limit the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention. The scope of protection of the present invention is defined by the attached claims and their equivalents.

Claims

1. A method for manufacturing a perovskite / silicon tandem solar cell and a localized conductive layer, characterized in that: The method comprises the following steps: Step S1, selecting a crystalline silicon cell with a dielectric hydrogen implantation passivation layer on its surface; Step S2, using a laser to ablate the first hydrogen injection passivation layer on the front side of the crystalline silicon cell until the conductive polysilicon layer underneath is exposed; Step S3, performing annealing treatment according to the degree of passivation reduction after laser treatment; Step S4, preparation and annealing of the interface conductive layer; Step S5, subsequent processing.

2. The method for manufacturing a perovskite / silicon tandem solar cell and a localized conductive layer according to claim 1, characterized in that: The types of crystalline silicon cells covered with a dielectric hydrogen injection passivation layer in step S1 are: crystalline silicon solar cells with n-type silicon substrate, p-type silicon substrate, one-side n-type TOPCon structure, p-type TOPCon structure, double-sided TOPCon structure, double-sided flat, one-side velvet surface and the other side flat, and double-sided velvet surface.

3. The method for manufacturing a perovskite / silicon tandem solar cell and a localized conductive layer according to claim 1, characterized in that: The laser in step S2 is an ultraviolet picosecond laser with a wavelength of 190-450nm and a pulse width of less than 100ps.

4. The method for manufacturing a perovskite / silicon tandem solar cell and a localized conductive layer according to claim 3, characterized in that: The power of the laser is 10-100W, and the internal control frequency is 100-10000kHz.

5. The method for manufacturing a perovskite / silicon tandem solar cell and a localized conductive layer according to claim 3, characterized in that: The spot area range is 1-10000um 2 The ratio of the laser irradiation area to the front illumination area is 1-100%.

6. The method for manufacturing a perovskite / silicon tandem solar cell and a localized conductive layer according to claim 1, characterized in that: In step S3, the annealing treatment is performed in an atmosphere of air, inert gas or vacuum, the annealing temperature is 100-1000° C., and the insulation time is 1-5000 s.

7. The method for manufacturing a perovskite / silicon tandem solar cell and a localized conductive layer according to claim 1, characterized in that: The method for preparing the interface conductive layer in step S4 is selected from: magnetron sputtering, thermal evaporation, electron beam evaporation, spin coating, spray coating or scraping.

8. The method for manufacturing a perovskite / silicon tandem solar cell and a localized conductive layer according to claim 1, characterized in that: If the annealing treatments in step S3 and step S4 are the same, they can be combined into step S4 for annealing treatment.

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