Black matrix integration

Abstract

Methods of reducing surface reflections and improving contrast in optoelectronic systems having micro-devices, which may include micro-LEDs, micro-sensors, MEMS, or another type of semiconductor or optoelectronic devices, are disclosed. In particular, a black matrix, a pixel circuit layer, a reflective layer, an optical structure, a photodefinable polymer, and a dielectric are used. Herein, the optical structure may comprise a wavelength tuning material.

Description

[0001] Background and technical field

[0002] The invention relates to an optoelectronic system comprising pixels. Summary of the invention

[0003] The present invention relates to a method for reducing surface reflection and improving contrast in a photoelectric system, the method comprising: having a backplane substrate; forming a pixel circuit layer on the surface of the backplane substrate and forming a black matrix layer on the backplane substrate; and integrating a microdevice into the backplane substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0004] The foregoing and other advantages of the present disclosure will become apparent by reading the following detailed description and referring to the accompanying drawings.

[0005] Figure 1A A backplane substrate is shown having a pixel circuit layer formed on its surface.

[0006] Figure 1B It is shown that another optical structure 130 may be added to the micro-device.

[0007] Although the present disclosure is susceptible to various modifications and alternative forms, specific embodiments or implementations have been shown in the drawings by way of example and will be described in detail herein. However, it should be understood that the present disclosure is not intended to be limited to the specific forms disclosed. On the contrary, the present disclosure will cover all modifications, equivalents and substitutes that fall within the spirit and scope of the present invention defined by the appended claims. DETAILED DESCRIPTION

[0008] The present invention relates to an optoelectronic system comprising pixels, wherein each pixel has at least one integrated micro-device. The micro-device may be a micro-LED, a micro-sensor, a MEMS or another type of semiconductor or optoelectronic device.

[0009] The present invention outlines a method of improving a photovoltaic system and also outlines a structure for the photovoltaic system.

[0010] like Figure 1A As shown, the system may have a backplane substrate 110, wherein a pixel circuit layer (TFT layer) 112 is formed on its surface. The pixel circuit layer may be a metal, dielectric, or semiconductor material. The pixel circuit layer or backplane substrate 110 may be reflective and thus affect system performance, such as contrast under ambient conditions. In order to reduce surface reflections and improve contrast in the optoelectronic system 100, a layer of black matrix 114 is formed on the backplane substrate 110.

[0011] The black matrix 114 may have an opening for a backplane pad 116. The backplane pad may be formed before the black matrix 114 or after the black matrix is ​​formed. The pad may cover a portion of the black matrix 114. The microdevice 120 is coupled to the pixel layer (TFT layer) 112 via the backplane pad 116 and the microdevice pad 118. After the black matrix 114 is formed, the microdevice is integrated into the substrate. Therefore, the black matrix does not cover the sidewalls or surfaces of the microdevice 120. In a related embodiment, other layers (such as adhesives) may be added to assist in the integration of microdevices. The adhesive layer may be on top of the black matrix. In another related embodiment, the black matrix is ​​removed from the area of ​​the adhesive to provide a stronger bond to the backplane or pixel layer.

[0012] In a related embodiment, the layer 108 below the micro device 120 can be reflective to reflect light. This layer can be added on top of the black matrix, or the black matrix can be removed from the top of the reflective layer in this area.

[0013] In another related embodiment, Figure 1B As shown, another optical structure 130 can be added to the microdevice. Layer 130 can be one or more of the following: wavelength tuning materials such as color conversion (e.g., Qdot, phosphor or other materials), wavelength filtering materials such as color filters, dike structures, protective layers such as passivation, or wave forming / shaping structures such as lenses. In a related embodiment, structure 130 can be a film covering more than one pixel area. In another related embodiment, to reduce reflections from structure 130, optical structure 130 can be patterned to cover the microdevice or extend from the edge of the microdevice.

[0014] The black matrix 114 can be a photodefinable polymer that can be patterned. In another related embodiment, the black matrix 114 can be a dielectric stack to block a specific range of wavelengths.

[0015] In another related embodiment, the microdevice is integrated into the backplane or pixel layer and the black matrix is ​​added afterwards. Herein, the black matrix is ​​patterned so as not to cover the surface of the microdevice. The microdevice may have a reflective structure on the side to prevent light from entering the black matrix from the side. In another related embodiment, the reflective layer surrounds the edge of the microdevice covering the black matrix.

[0016] Although the present disclosure is susceptible to various modifications and alternative forms, specific embodiments or implementations have been shown in the drawings by way of example and will be described in detail herein. However, it should be understood that the present disclosure is not intended to be limited to the specific forms disclosed. On the contrary, the present disclosure will cover all modifications, equivalents and alternative forms that fall within the spirit and scope of the present invention as defined by the appended claims.

Claims

1. A method for reducing surface reflection and improving contrast in an optoelectronic system, the method comprising: having a backplane substrate; forming a pixel circuit layer on the surface of the backplane substrate; forming a black matrix layer on the backplane substrate; as well as Micro devices are integrated into the backplane substrate.

2. The method of claim 1, wherein the pixel circuit or the backplane substrate is reflective. The method of claim 1 , wherein the pixel circuit layer comprises one of the following: a metal, a dielectric, or a semiconductor. The method of claim 1 , wherein the black matrix has openings for backplane pads. 5 . The method according to claim 4 , wherein the backplane pad is formed before the black matrix is ​​formed or after the black matrix is ​​formed. The method of claim 4 , wherein the micro device is coupled to the pixel circuit layer through the backplane pad and the micro device pad. The method of claim 1 , wherein an adhesive layer is on top of the black matrix. The method of claim 7 , wherein the black matrix is ​​removed from the area of ​​the adhesive.

9. The method of claim 1, wherein a layer beneath the micro-device is reflective.

10. The method of claim 9, wherein the layer is added on top of the black matrix or the black matrix is ​​removed from top of the reflective layer.

11. The method of claim 1 , wherein another optical structure is added to the microdevice, wherein the optical structure is one or more of: a wavelength tuning material such as a color conversion, a wavelength filtering material such as a color filter or a dam structure, a protective layer such as a passivation, or a wave forming / shaping structure such as a lens.

12. The method of claim 11, wherein the optical structure is a film covering more than one pixel area. 13 . The method according to claim 11 , wherein the optical structure is patterned to cover the micro device or to extend from an edge of the micro device.

14. The method of claim 1, wherein the black matrix is ​​a patternable photodefinable polymer.

15. The method of claim 1, wherein the black matrix is ​​a dielectric stack to block a specific range of wavelengths.

16. The method according to claim 1, wherein the micro device is integrated into the backplane substrate or the pixel layer, and then the black matrix is ​​added. The method according to claim 16 , wherein the black matrix is ​​patterned so as not to cover a surface of the micro device. 18 . The method according to claim 17 , wherein a side surface of the micro device has a reflective structure to prevent light from entering the black matrix from the side surface. The method according to claim 18 , wherein a reflective layer surrounds the micro-device and covers an edge of the black matrix.

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