Substrate processing apparatus

Abstract

The invention provides a substrate processing apparatus, which can improve the processing capacity by reviewing the structure of an apparatus provided with a batch-type module and a monolithic module. A buffer section (31) is provided in a single-chip processing region (R2) for single-chip processing in a processing block (9) of the present invention, and the buffer section (31) is capable of receiving and transferring a substrate (W) by both a first conveyance mechanism (HTR) and a center robot (CR). Therefore, the first conveying mechanism (HTR) receives and conveys the processed substrate (W) and the unprocessed substrate (W) together through the buffer part (31). Therefore, the potential of the first conveying mechanism (HTR) can be excited, and the substrate processing apparatus (1) with high processing capacity can be provided.

Description

Technical Field

[0001] The present invention relates to a substrate processing device for performing predetermined processing on various substrates such as semiconductor substrates, FPD (flat panel display) substrates such as liquid crystal display or EL (electroluminescence) display devices, glass substrates for masks, and substrates for optical disks. Background Art

[0002] In the past, as such an apparatus, there is an apparatus having a batch module and a monolithic module (for example, refer to Patent Document 1). The batch module performs a predetermined process on a plurality of substrates at once. The monolithic module performs a predetermined process on substrates one by one. The batch module and the monolithic module each have their own advantages. For example, compared with the batch module, the monolithic module has a higher particle performance in the drying process. Therefore, as an apparatus having a batch module and a monolithic module, a configuration is considered in which a liquid process is performed in the batch module and then a drying process is performed in the monolithic module.

[0003] In the apparatus of Patent Document 1, the substrates processed by the batch module and the single-chip module are returned to the box piece by piece. That is, according to the conventional structure, the substrates processed by the single-chip module are received by a robot for conveying the substrates piece by piece and are stacked in the box. That is, the apparatus of Patent Document 1 is configured to return the processed substrates to the box piece by piece by the same conveying method as a substrate processing apparatus that does not have a batch module but processes substrates by single-chip modules.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2016-502275. Summary of the invention

[0007] Problem that the invention aims to solve

[0008] However, the conventional device having such a configuration has the following problems.

[0009] That is, according to the previous structure, a high processing volume cannot be obtained. As a substrate processing device having a batch module, there is known a device having a substrate operating mechanism, which is used to take out a plurality of substrates arranged in a box at a time. This substrate operating mechanism can transport a substrate piece by piece, so it is very helpful to increase the processing volume. The device structure having this substrate operating mechanism is indeed advantageous from the perspective of taking out unprocessed substrates from the box at a time. However, in the previous device structure, the processed substrates moved out of the single-chip module are returned to the box piece by piece. Therefore, in the stage where the processed substrates are returned to the box, the advantages of the substrate operating mechanism cannot be utilized.

[0010] In addition, this problem does not only occur in the substrate processing device described above. The same problem also occurs in a substrate processing device in the reverse order in which substrates are processed in the order of a single-chip module and a batch module. The flow of substrates in the substrate handling method in this reverse order device is opposite to the flow of substrates in the substrate handling method in the device described above (normal order device) that processes in the order of a batch module and a single-chip module. Therefore, a reverse order device having a parallel substrate handling mechanism is indeed advantageous from the perspective of returning the processed substrates to the box at a time. However, in the previous device configuration, unprocessed substrates are transported from the box to the single-chip module one by one. That is, in the reverse order device, the advantages of the substrate handling mechanism cannot be utilized in the stage of taking out the unprocessed substrates from the box.

[0011] In addition, the substrate handling mechanism is a complex device with multiple movable parts. Such a device may be affected by the chemical solution used in the batch module and deteriorate. This is because the chemical solution used in the batch module is corrosive acid such as sulfuric acid. The previous device did not conduct sufficient review in this part and could not fully protect the substrate handling mechanism from acid corrosion. If the substrate handling mechanism is corroded and malfunctions, the substrate cannot be transported reliably.

[0012] The present invention has been developed in view of such a problem, and an object of the present invention is to provide a substrate processing apparatus that re-examines the structure of an apparatus having a batch module and a single-chip module, thereby improving the processing throughput and being able to reliably transport substrates.

[0013] Means used to solve problems

[0014] In order to achieve the object, the present invention adopts the following configuration.

[0015] (1) A substrate processing device for continuously performing: batch processing, processing a plurality of substrates at a time; and single-wafer processing, processing substrates one by one. The substrate processing device comprises: a storage block; a transfer block adjacent to the storage block; and a processing block adjacent to the transfer block. The storage block is used to accommodate at least one carrier, and comprises at least one carrier rack for taking out and storing substrates, the carrier storing a plurality of substrates in a horizontal posture at predetermined intervals in a vertical direction, and the carrier rack is used to carry the carrier so as to carry the substrates in and out relative to the carrier. The transfer block comprises: a substrate operating mechanism for taking out and storing a plurality of substrates at a time for the carrier placed on the carrier rack; and a first posture changing mechanism for changing the posture of a plurality of substrates between a horizontal posture and a vertical posture at a time. The aforementioned processing block comprises: a batch processing area, one end side of which is adjacent to the aforementioned transfer block and the other end side of which extends in a direction away from the aforementioned transfer block; a single-wafer processing area, one end side of which is adjacent to the aforementioned transfer block and the other end side of which extends in a direction away from the aforementioned transfer block; a single-wafer substrate conveying area, which is sandwiched between the aforementioned batch processing area and the aforementioned single-wafer processing area, one end side of which is adjacent to the aforementioned transfer block and the other end side of which extends in a direction away from the aforementioned transfer block; and a batch substrate conveying area, which is arranged along the aforementioned batch processing area, one end side of which extends to the aforementioned transfer block and the other end side of which extends in a direction away from the aforementioned transfer block. In the batch processing area, a plurality of batch processing tanks are arranged in the direction in which the batch processing area extends, and a second posture changing mechanism is provided at a position closest to the transfer block. The batch processing tanks immerse and process a plurality of substrates at a time, and at least one of the batch processing tanks is a batch liquid processing tank for containing a liquid for acid-treating a plurality of substrates at a time. The second posture changing mechanism changes the posture of the plurality of substrates between a vertical posture and a horizontal posture at a time. In the single-wafer processing area, a plurality of single-wafer processing chambers are arranged in the direction in which the single-wafer processing area extends, and a substrate placing portion is provided at a position closest to the transfer block. The single-wafer processing chambers immerse and process the substrates one by one. Processing substrates, the substrate loading section loads a plurality of substrates in a horizontal posture in a vertical direction at the same specified interval as the carrier; the single-chip substrate conveying area is provided with: a single-chip substrate conveying mechanism, which conveys substrates between the second posture changing mechanism, the single-chip processing chamber and the substrate loading section; the batch substrate conveying area is provided with: a batch substrate conveying mechanism, which conveys a plurality of substrates at a time between a substrate receiving and transferring position set in the transfer block, the batch processing slot and the second posture changing mechanism; the substrate operating mechanism of the transfer block is further configured to be able to receive and transfer a plurality of substrates at a time between the substrate loading section of the single-chip processing area.

[0016] (1) Technical effect. According to the invention of (1) described above, a substrate loading section is provided in the single-chip processing area, and the substrate loading section can be used by both the substrate operating mechanism and the single-chip substrate conveying mechanism to receive and transfer the substrate. Therefore, the substrate operating mechanism can receive and transfer the substrate between the single-chip processing area and the single-chip processing area via the substrate loading section. Specifically, in the normal sequence device described above, the single-chip processed substrates moved out piece by piece by the single-chip substrate conveying mechanism are arranged in the vertical direction and stored in the substrate loading section. The substrate operating mechanism collects the plurality of substrates stored in the substrate loading section in the carrier at the same time. In the normal sequence device, the structure of the substrate operating mechanism taking out the unprocessed substrates from the carrier at the same time is the same as the previous structure. On the other hand, in the reverse sequence device, the unprocessed substrates moved into the single-chip processing area at the same time by the substrate operating mechanism are arranged in the vertical direction and stored in the substrate loading section. The single-wafer substrate transport mechanism transports the plurality of substrates stored in the substrate loading section to the single-wafer processing chamber one by one. In the device in the opposite order, the structure in which the substrate handling mechanism stores the processed substrates in the carrier is the same as the previous structure. Therefore, in any device structure, the substrate is moved in and out of the carrier by the substrate handling mechanism. According to this structure, the potential of the substrate handling mechanism can be stimulated, so that a substrate processing device with a high processing capacity can be provided.

[0017] Furthermore, according to the invention of (1) described above, one end of each of the batch processing area, the single-wafer processing area, the single-wafer substrate transport area, and the batch substrate transport area is adjacent to the transfer block. Therefore, the transport distance of the substrates between the transfer block and the batch processing area and between the transfer block and the single-wafer processing area is shortened, and the substrates can be transported smoothly between each of them.

[0018] Furthermore, according to the invention of (1) described above, since the second posture changing mechanism is located on the transfer block side of the batch liquid processing tank in the processing block, the substrate handling mechanism provided in the transfer block can be sufficiently separated from the batch liquid processing tank. According to this configuration, since the substrate handling mechanism can be sufficiently protected from corrosion by phosphoric acid and the substrate handling mechanism does not malfunction due to corrosion, the substrate can be reliably transported.

[0019] The present invention also has the following features.

[0020] (2) The substrate processing apparatus as described in (1), wherein the batch processing area comprises: the batch liquid processing tank; and a batch cleaning processing tank for storing cleaning liquid, wherein the cleaning liquid is used to clean and process a plurality of substrates that have been treated with liquid at one time; the batch liquid processing tank is located farther from the transfer block than the batch cleaning processing tank. The single-wafer processing area comprises: a single-wafer liquid processing chamber for liquid-treating substrates one by one; and a single-wafer drying processing chamber for drying the liquid-treated substrates one by one; the single-wafer drying processing chamber is located closer to the transfer block than the single-wafer liquid processing chamber. In the aforementioned transfer block, the aforementioned substrate operation mechanism takes out a plurality of substrates from the aforementioned carrier at a time, and the aforementioned first posture conversion mechanism converts the posture of the taken-out plurality of substrates from a horizontal posture to a vertical posture; in the aforementioned processing block, the aforementioned batch substrate transport mechanism receives a plurality of substrates in a vertical posture at a time at the aforementioned substrate receiving and transferring position of the aforementioned transfer block, and sequentially transports the received plurality of substrates to the aforementioned batch liquid treatment tank, the aforementioned batch cleaning treatment tank, and the aforementioned second posture conversion mechanism; the aforementioned second posture conversion mechanism The received plurality of substrates in a vertical posture are transformed into a horizontal posture; the single-piece substrate conveying mechanism conveys the substrates transformed into a horizontal posture by the second posture transforming mechanism one by one in sequence toward the single-piece liquid processing chamber, the single-piece drying processing chamber and the substrate loading section; in the transfer block, when the plurality of substrates are loaded on the substrate loading section in the processing block, the substrate operating mechanism takes out the plurality of substrates from the substrate loading section at a time, and accommodates the taken-out plurality of substrates at a time in the carrier.

[0021] Technical effect of (2). According to the structure of (2), a plurality of substrates are treated with a liquid medicine in a batch liquid medicine treatment tank far away from the transfer block in the batch processing area. Thereafter, a plurality of substrates are cleaned in a batch cleaning treatment tank close to the transfer block in the batch processing area. Then, after the cleaning, the plurality of substrates are transformed from a vertical posture to a horizontal posture by a second posture transformation mechanism closest to the transfer block. The plurality of substrates transformed into a horizontal posture enter a standby state for single-wafer processing. In this way, according to the structure of (2), since the batch cleaning tank is located between the transfer block and the batch liquid medicine treatment tank, the distance between the transfer block and the batch liquid medicine treatment tank is further, so a substrate processing device can be provided in which the substrate operating mechanism has fewer failures and can reliably transport substrates.

[0022] Furthermore, according to the configuration of (2), the substrates transformed into a horizontal posture are subjected to liquid treatment piece by piece in a single-wafer liquid treatment chamber in the single-wafer processing area away from the transfer block. Subsequently, the substrates that have been dried in the single-wafer drying treatment chamber are stored in a substrate loading section in the batch processing area close to the transfer block, thereby becoming a standby state for collective transport by the substrate handling mechanism. Thus, according to the configuration of (2), in the processing block, as the substrates are transported piece by piece to a direction close to the transfer block, the various processes of liquid treatment, drying treatment, and collective transport standby are sequentially performed. Therefore, according to the present invention, the transport distance of the substrates in the single-wafer processing area is short, thereby enabling a substrate processing device with a high processing capacity to be realized.

[0023] (3) The substrate processing apparatus as described in (1), wherein the single-wafer processing area is provided with: a single-wafer liquid processing chamber for liquid processing substrates one by one. The batch processing area is provided with: the batch liquid processing tank; a batch cleaning processing tank for storing cleaning liquid, wherein the cleaning liquid is used to clean and process a plurality of liquid-treated substrates at a time; and a batch drying chamber for drying and processing a plurality of cleaned substrates at a time. The batch drying chamber is located closer to the transfer block than the batch cleaning processing tank; and the batch cleaning processing tank is located on one side closer to the transfer block than the batch liquid processing tank. In the aforementioned transfer block, the aforementioned substrate operation mechanism takes out a plurality of substrates from the aforementioned carrier at a time and places them on the aforementioned substrate placement section in the aforementioned processing block; in the aforementioned processing block, the aforementioned single-piece substrate conveying mechanism conveys the plurality of substrates placed on the aforementioned substrate placement section one by one in sequence toward the aforementioned single-piece liquid processing chamber and the aforementioned second posture conversion mechanism; the aforementioned second posture conversion mechanism converts the plurality of substrates in a horizontal posture into a vertical posture when receiving the plurality of substrates in a horizontal posture; the aforementioned batch substrate conveying mechanism conveys the plurality of substrates in a horizontal posture to the aforementioned second posture conversion mechanism in the aforementioned processing block; The second posture changing mechanism receives a plurality of substrates in a vertical posture at a time, and sequentially transports the received plurality of substrates to the aforementioned batch liquid treatment tank, the aforementioned batch cleaning treatment tank, the aforementioned batch drying chamber, and the aforementioned substrate receiving and transferring position in the aforementioned transfer block; in the aforementioned transfer block, the aforementioned first posture changing mechanism changes the posture of the plurality of substrates received at the aforementioned substrate receiving and transferring position from a vertical posture to a horizontal posture; the aforementioned substrate operating mechanism stores the plurality of substrates in a horizontal posture at a time in the aforementioned carrier.

[0024] The technical effect of (3). According to the structure of (3), the present invention is applied to the structure of the device in the reverse order described above. Even for the device in the reverse order, the present invention can provide a substrate processing device that achieves the same technical effect as (2) described above.

[0025] (4) The substrate processing apparatus as described in (1), wherein the single-wafer drying processing chamber dries the substrate using a supercritical fluid.

[0026] Effect and effect of (4): According to the configuration of (4), substrate processing can be performed while the circuit pattern formed on the substrate is reliably maintained.

[0027] (5) A substrate processing apparatus as described in (1), wherein the single-chip substrate transport mechanism comprises: a first hand for transporting the substrate before drying; and a second hand provided on the upper portion of the first hand for transporting the substrate after drying.

[0028] Effect of (5): According to the structure of (5), the substrate after the drying process will not be wetted by the first hand, and the dry state of the substrate after the drying process can be reliably maintained.

[0029] (6) The substrate processing apparatus as described in (1), wherein the single-substrate conveying mechanism comprises: a first robot for conveying the substrate before drying processing; and a second robot for conveying the substrate after drying processing.

[0030] Function and technical effect of (6). According to the structure of (6), since a robot for carrying substrates after drying is provided independently of a robot for carrying substrates before drying, substrates before drying and substrates after drying can be carried simultaneously, thereby increasing the processing capacity of the substrate processing device. In addition, since the robot for carrying substrates after drying does not need to hold the wet substrates before drying, there is no problem of the robot for carrying substrates after drying carrying the substrates after drying in a wet state. Therefore, through this structure, a substrate processing device that reliably maintains the dry state of the substrate can be provided.

[0031] Effects of the Invention

[0032] According to the present invention, a substrate loading unit is provided in the single-chip processing area, and the substrate loading unit can be used by both the substrate handling mechanism and the single-chip substrate conveying mechanism to receive and transfer the substrate. Therefore, the substrate handling mechanism can receive and transfer the substrate between the single-chip processing area and the single-chip processing area via the substrate loading unit. According to this structure, the substrate is moved in and out of the carrier at the same time by the substrate handling mechanism. Therefore, the potential of the substrate handling mechanism can be stimulated, so that a substrate processing device with a high processing capacity can be provided. In addition, according to the present invention, the second posture change mechanism is located between the transfer block provided with the substrate handling mechanism and the batch liquid treatment tank. According to this structure, the batch liquid treatment tank transfer block is separated from the transfer block by the distance provided with the second posture change mechanism. Therefore, according to the present invention, the substrate handling mechanism in the transfer block is prevented from being corroded by the acid in the batch liquid treatment tank as much as possible. In this way, according to the present invention, a substrate processing device with few failures of the substrate handling mechanism and capable of reliably conveying the substrate can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 It is a top view for explaining the overall structure of the substrate processing apparatus according to the first embodiment.

[0034] Figure 2 It is a perspective view for specifically explaining the posture changing unit.

[0035] Figure 3 It is a schematic diagram for explaining the operation of the posture changing unit.

[0036] Figure 4 A flow chart for explaining the process of substrate processing.

[0037] Figure 5 A schematic diagram for explaining the process of substrate processing.

[0038] Figure 6 A schematic diagram for explaining the process of substrate processing.

[0039] Figure 7 A schematic diagram for explaining the process of substrate processing.

[0040] Figure 8 A schematic diagram for explaining the process of substrate processing.

[0041] Fig. 9 It is a top view for explaining the overall structure of the substrate processing apparatus of the second embodiment.

[0042] Fig.10 A flowchart for explaining the process of substrate processing.

[0043] Fig.11 A schematic diagram for explaining the process of substrate processing.

[0044] Fig.12 A schematic diagram for explaining the process of substrate processing.

[0045] Fig.13 A schematic diagram for explaining the process of substrate processing.

[0046] Fig.14 A schematic diagram for explaining the process of substrate processing.

[0047] Fig.15 A schematic diagram for explaining the process of substrate processing.

[0048] Fig.16 It is a schematic diagram for explaining a first variation of the present invention.

[0049] Fig.17 It is a top view for explaining a first variation of the present invention. DETAILED DESCRIPTION

[0050] The following describes an embodiment of the present invention with reference to the accompanying drawings. The substrate processing apparatus of the present invention is an apparatus for continuously performing batch processing and single-wafer processing. The batch processing is for processing a plurality of substrates W at once, and the single-wafer processing is for processing substrates W one by one.

[0051] Embodiment 1

[0052] [1. Overall composition]

[0053] like Figure 1 As shown, the substrate processing apparatus 1 has blocks divided by adjacent walls. That is, the substrate processing apparatus 1 includes: a loading and unloading block 3; a storage block 5 adjacent to the loading and unloading block 3; a transfer block 7 adjacent to the storage block 5; and a processing block 9 adjacent to the transfer block 7. The storage block 5 is equivalent to the storage block of the present invention, the transfer block 7 is equivalent to the transfer block of the present invention, and the processing block 9 is equivalent to the processing block of the present invention.

[0054] The substrate processing apparatus 1 performs various processes such as liquid treatment, cleaning treatment, and drying treatment on the substrate W. The substrate processing apparatus 1 adopts a processing method (so-called hybrid method) that combines a batch processing method for processing a plurality of substrates W at once and a single-wafer processing method for processing substrates W one by one. The batch processing method is a processing method for processing a plurality of substrates W arranged in a vertical posture at once. The single-wafer processing method is a processing method for processing substrates W in a horizontal posture one by one.

[0055] In this specification, for the convenience of explanation, the direction in which the loading and unloading block 3, the storage block 5, the transfer block 7 and the processing block 9 are arranged is referred to as the "front-to-back direction X". The front-to-back direction X extends horizontally. The direction from the storage block 5 toward the loading and unloading block 3 in the front-to-back direction X is referred to as the "front". The direction opposite to the front is referred to as the "rear". The direction extending horizontally orthogonal to the front-to-back direction X is referred to as the "width direction Y". One direction of the "width direction Y" is appropriately referred to as the "right", and the other direction is appropriately referred to as the "left". The direction (height direction) orthogonal to the front-to-back direction X and the width direction Y is appropriately referred to as the "vertical direction Z". In each figure, the front, back, left, right, top and bottom are appropriately shown as a reference.

[0056] [2. Move in and out of blocks]

[0057] The loading and unloading block 3 includes: an input portion 11, which is an entrance when a carrier C is loaded into the block, and the carrier C is used to store a plurality of substrates W in a horizontal posture in a vertical direction at predetermined intervals; and a removal portion 13, which is an exit when the carrier C is removed from the block. The input portion 11 and the removal portion 13 are provided on the outer wall of the loading and unloading block 3 extending in the width direction (Y direction). The input portion 11 is provided on the right side when viewed from the center of the width direction (Y direction) of the substrate processing apparatus 1, and the removal portion 13 is provided on the left side opposite to the right side when viewed from the center of the width direction (Y direction) of the substrate processing apparatus 1.

[0058] A plurality of (for example, twenty-five) substrates W are stacked and stored in a carrier C in a horizontal posture at fixed intervals. The carrier C storing the unprocessed substrates W to be carried into the substrate processing device 1 is first placed in the input part 11. The input part 11, for example, has two loading tables 15, and the loading tables 15 are for the carrier C to be placed. The carrier C is formed with a plurality of grooves (not shown in the figure) extending in the horizontal direction, and the plurality of grooves (not shown in the figure) are used to accommodate the substrates W in a state where the surfaces of the substrates W have been separated from each other. The substrates W are inserted into each groove one by one. As the carrier C, there is, for example, a closed FOUP (Front Opening Unified Pod; front-opening wafer transfer box). In the present invention, an open container can also be used as the carrier C.

[0059] The unloading unit 13 unloads the carrier C storing the processed substrate W unloaded from the substrate processing apparatus 1. Like the loading unit 11, the unloading unit 13 having such a function includes, for example, two mounting tables 17 for mounting the carrier C. The loading unit 11 and the unloading unit 13 are also called load ports.

[0060] [3. Storage Block]

[0061] The storage block 5 is arranged adjacent to the rear of the loading and unloading block 3. The storage block 5 includes a transport storage section ACB for storing and managing the carriers C. The transport storage section ACB includes a transport mechanism 19 for transporting the carriers C and a rack 21 for placing the carriers C. The number of carriers C that can be stored in the storage block 5 is one or more.

[0062] The storage block 5 has a plurality of racks 21 for mounting carriers C. The racks 21 are provided at a wall for separating the storage block 5 from the transfer block 7. The racks 21 include a storage rack 21b for mounting carriers C temporarily and a carrier rack 21a for substrate removal and storage, which is accessed by the first transport mechanism HTR of the transfer block 7. The carrier rack 21a for substrate removal and storage corresponds to the carrier rack for substrate removal and storage of the present invention. The carrier rack 21a is configured to mount carriers C so that substrates W can be carried in and out of the carriers C. Although one carrier rack 21a for substrate removal and storage is provided in the present embodiment, a plurality of carrier racks 21a for substrate removal and storage may be provided. The transport mechanism 19 takes in a carrier C for storing unprocessed substrates W from the input portion 11 and mounts the carrier on the carrier rack 21a for substrate removal and storage. At this time, the transport mechanism 19 can also temporarily place the carrier C on the storage rack 21b before placing it on the carrier loading rack 21a. In addition, the transport storage unit ACB receives the carrier C storing the processed substrate W from the carrier loading rack 21a and places it on the removal unit 13. At this time, the transport mechanism 19 can also temporarily place the carrier C on the storage rack 21b before placing it on the removal unit 13. The number of carrier loading racks 21a included in the storage block 5 is one or more.

[0063] [4. Transfer block]

[0064] The transfer block 7 is arranged adjacent to the rear of the storage block 5. The transfer block 7 includes: a first transport mechanism HTR capable of storing and accessing a carrier C placed on a carrier rack 21a for substrate removal and storage; an HVC posture changer 20 for simultaneously changing the posture of a plurality of substrates W from a horizontal posture to a vertical posture; and a pusher mechanism 22. The first transport mechanism HTR is equivalent to the substrate operating mechanism of the present invention, and the HVC posture changer 20 is equivalent to the first posture changer of the present invention. Furthermore, a substrate receiving and transferring position P is set in the transfer block 7 for receiving and transferring a plurality of substrates W to a second transport mechanism WTR provided in the batch substrate transfer region R4. The first transport mechanism HTR, the HVC posture changer 20, and the pusher mechanism 22 are arranged in sequence in the Y direction.

[0065] The first transport mechanism HTR is arranged on the right side of the rear of the transport storage section ACB of the storage block 5. The first transport mechanism HTR is a mechanism for taking out a plurality of substrates W from the carrier C placed on the carrier rack 21a for taking out and storing substrates, and storing the processed plurality of substrates W in the carrier C. The first transport mechanism HTR has a plurality of (for example, twenty-five) hands 71 ​​for carrying a plurality of substrates W at a time. One hand 71 supports one substrate W. Therefore, the first transport mechanism HTR can also carry only one substrate W. The first transport mechanism HTR takes out a plurality of (for example, twenty-five) substrates W at a time from the carrier C placed on the carrier rack 21a of the storage block 5. Then, the first transport mechanism HTR can transport the held plurality of substrates W to the support table 20A of the HVC posture change unit 20. The HVC posture change unit 20 changes the received plurality of substrates W in a horizontal posture into a vertical posture. The pusher mechanism 22 is configured to hold the plurality of substrates W in a vertical posture and to move the plurality of substrates W in the vertical and horizontal directions.

[0066] In addition, the first transport mechanism HTR receives a plurality of processed substrates W from the processing block 9 described later. Then, the first transport mechanism HTR stores the processed substrates W in an empty carrier C placed on a carrier rack 21a for substrate removal and storage in the storage block 5. The plurality of substrates W waiting at the exit of the processing block 9 are in a horizontal position. Therefore, the first transport mechanism HTR transports the plurality of substrates W from the processing block 9 to the storage block 5 while maintaining the horizontal position of the substrates W. In this way, the first transport mechanism HTR can be a structure for transporting unprocessed substrates W from the carrier C to the transfer block 7 at a time, or a structure for transporting processed substrates W from the processing block 9 to the carrier C at a time.

[0067] Figure 2 The HVC posture changing unit 20 of the first embodiment is described. The HVC posture changing unit 20 includes a pair of horizontal holding units 20B and a pair of vertical holding units 20C extending in the longitudinal direction (Z direction). The support platform 20A includes: a supporting surface, which is extended in the XY plane and is used to support the horizontal holding unit 20B and the vertical holding unit 20C. The rotation drive mechanism 20D is configured as follows: it is used to rotate the horizontal holding unit 20B and the vertical holding unit 20C of the support platform 20A by 90° each time. Through this rotation, the horizontal holding unit 20B and the vertical holding unit 20C are configured to extend in the left-right direction (Y direction). In addition, Figure 3 2 is a schematic diagram for explaining the operation of the HVC posture changing unit 20. Figure 2 as well as Figure 3 Describe the composition of each part.

[0068] The horizontal holding part 20B supports the plurality of substrates W in a horizontal posture from the lower side. That is, the horizontal holding part 20B has a comb-tooth-shaped structure having a plurality of protrusions corresponding to the substrates W to be supported. There are elongated recesses between the adjacent protrusions, and the elongated recesses are located at the peripheral portion of the substrate W. When the peripheral portion of the substrate W is inserted into the recess, the lower surface of the substrate W in a horizontal posture contacts the upper surface of the protrusion, and the substrate W is supported in a horizontal posture.

[0069] The vertical holding portion 20C supports a plurality of substrates W in a vertical posture from the lower side. That is, the vertical holding portion 20C has a comb-tooth-shaped structure having a plurality of protrusions corresponding to the substrate W of the supported object. There is an elongated V-groove between the protrusions adjacent to each other, and the elongated V-groove is located at the peripheral portion of the substrate W. When the peripheral portion of the substrate W is inserted into the V-groove, the substrate W is clamped by the V-groove and supported in a vertical posture. Since two vertical holding portions 20C are provided on the support table 20A, two parts of the peripheral portion of the substrate W are clamped by different V-grooves, respectively.

[0070] A pair of horizontal holding parts 20B and a pair of vertical holding parts 20C extending in the longitudinal direction (Z direction) are arranged along a virtual circle corresponding to the substrate W in a horizontal posture in a manner surrounding the substrate W to be held. The pair of horizontal holding parts 20B are separated by the diameter of the substrate W, and hold one end of the substrate W and the other end corresponding to the position farthest from the one end. In this way, the pair of horizontal holding parts 20B support the substrate W in a horizontal posture. On the other hand, the pair of vertical holding parts 20C are separated by a distance shorter than the diameter of the substrate W, and support a predetermined part of the substrate W and a specific part located near the predetermined part. In this way, the pair of vertical holding parts 20C support the substrate W in a vertical posture. The pair of horizontal holding parts 20B are located at the same position in the left-right direction (Y direction), and the pair of vertical holding parts 20C are located at the same position in the left-right direction (Y direction). The pair of vertical holding parts 20C are arranged on the side of the direction (left direction) in which the support table 20A rotates and falls down, which is closer to the pair of horizontal holding parts 20B.

[0071] The rotation drive mechanism 20D supports the support table 20A in a manner that can at least rotate the support table 20A by 90° around the horizontal axis AX2 extending in the front-back direction (X direction). When the support table 20A in the horizontal state is rotated by 90°, the support table 20A becomes a vertical state, and the posture of the plurality of substrates W held by the vertical holding parts 20C, 20C is changed from a horizontal posture to a vertical posture.

[0072] like Figure 3As shown in (f) in FIG. 1 , the pusher mechanism 22 includes: a pusher 22A capable of carrying a substrate W in a vertical posture; a lifting and rotating part 22B for rotating and lifting the pusher 22A; a horizontal moving part 22C for moving the pusher 22A in the left-right direction (Y direction); and a track 22D extending in the left-right direction (Y direction) for guiding the horizontal moving part 22C. The pusher 22A is configured as follows: to support the lower part of each of a plurality of (e.g., fifty) substrates W in a vertical posture. The lifting and rotating part 22B is a structure disposed below the pusher 22A, and is provided with a retractable mechanism for lifting and lowering the pusher 22A in the vertical direction. In addition, the lifting and rotating part 22B is capable of rotating the pusher 22A at least 180° around the vertical axis. The horizontal moving part 22C is a structure for supporting the lifting and rotating part 22B, and is used to horizontally move the pusher 22A and the lifting and rotating part 22B. The horizontal moving part 22C can be guided by the rail 22D to move the pusher 22A from the pickup position close to the HVC posture changing part 20 to the substrate receiving and transferring position P. In addition, the horizontal moving part 22C can also displace the pusher 22A to a distance corresponding to a half pitch in the substrate arrangement, so as to displace the substrate W in the vertical posture in the arrangement direction of the substrate W.

[0073] Here, the operation of the HVC posture changing unit 20 and the pusher mechanism 22 is described. The HVC posture changing unit 20 and the pusher mechanism 22 arrange, for example, fifty substrates W contained in two carriers C in a face-to-back manner at a predetermined interval (for example, 5 mm). The twenty-five substrates W in the first carrier C are described as first substrates W1 belonging to the first substrate group. Similarly, the twenty-five substrates W in the second carrier C are described as second substrates W2 belonging to the second substrate group. In addition, for the convenience of drawing, Figure 3 (a) to Figure 3 In (f), the number of first substrates W1 is three, and the number of second substrates W2 is three.

[0074] Figure 3 (a) shows a state where the first substrate W1, which will be in a horizontal posture, is transferred to the HVC posture changing unit 20 by the first transport mechanism HTR. At this time, the device surface (circuit pattern forming surface) of the first substrate W1 faces upward. Twenty-five first substrates W1 are arranged at a predetermined interval (for example, 10 mm). This 10 mm interval is called the full pitch (normal pitch). The first substrate W1 in this state is held by the horizontal holding unit 20B. In addition, the pusher 22A at this time is located at a pickup position below the support table 20A.

[0075] Figure 3(b) shows the state after the support table 20A of the HVC posture changing unit 20 has been rotated 90 degrees by the rotation drive mechanism 20D. In this way, the postures of the twenty-five first substrates W1 are changed from the horizontal posture to the vertical posture in the HVC posture changing unit 20. The first substrates W1 in this state are held by the vertical holding unit 20C.

[0076] Figure 3 (c) in the figure shows a state where the pusher 22A rises from the pick-up position and moves to the upper position set above the pick-up position. This rising movement is performed by the lifting and rotating part 22B. In this way, when the pusher 22A moves from the lower side to the upper side of the first substrate W1, the first substrate W1 supported by the vertical holding part 20C of the HVC posture change part 20 is pulled out from the vertical holding part 20C and moved to the pusher 22A. Grooves for clamping the substrate W are provided on the upper surface of the pusher 22A. The first substrate W1 is supported by a plurality of grooves arranged at equal intervals. Since the grooves are arranged at half pitch and the first substrate W1 is arranged at full pitch in the HVC posture change part 20, grooves for clamping the first substrate W1 and empty grooves that do not support the substrate W are alternately arranged on the upper surface of the pusher 22A located at the upper position.

[0077] Figure 3 (d) in FIG. 1 shows the action of the pusher 22A moving to the half pitch width and the action of the support table 20A of the HVC posture changing unit 20 rotating 90° counterclockwise by the rotation drive mechanism 20D. The HVC posture changing unit 20 in this state can support the second substrate W2. Figure 3 In (d), the HVC posture changing unit 20 shows the state when the second substrate W2 has been transported by the HVC posture changing unit 20. Figure 3 In (d), the second substrate W2 is supported by the horizontal holding portion 20B.

[0078] When Figure 3 When the pusher 22A located at the upper position in the state (d) returns to the original pickup position, the HVC posture changing unit 20 can rotate the support table 20A by 90° again.

[0079] Figure 3 (e) in FIG. 2 shows the support table 20A after it has actually rotated again. At this time, since the pusher 22A moves to the half-pitch width, Figure 3 As shown in (f) in FIG. 1 , when the pusher 22A is moved to the upper position again, the second substrate W2 is received in the empty groove sandwiched between the first substrates W1 on the upper surface of the pusher 22A in a manner that does not interfere with the first substrate W1. In this way, a batch group in which the first substrates W1 and the second substrates W2 are alternately arranged is formed. In addition, Figure 3In (e), the second substrate W2 is supported by the vertical holding portion 20C. Since the batch group is formed by arranging the substrates W in a face-to-back manner, the device surfaces of the substrates W used to form the batch group are all facing the vertical holding portion 20C. Figure 3 To the left of (f).

[0080] Figure 3 (f) in FIG. 2 shows the pusher 22A when it moves to the upper position again. The batch group produced by the pusher 22A is conveyed to the left (Y direction) by the horizontal moving part 22C and moved to the substrate receiving and delivering position P.

[0081] In addition, in the following description, the arrangement of the substrates to be processed is not discussed. That is, whether it is a conventional batch group (e.g., 25 substrates W arranged at full pitch) or the batch group described above, the main part of the present invention is the same. In the following description, the processing object is referred to as a batch group or a plurality of substrates W.

[0082] [5. Processing Block]

[0083] The processing block 9 performs various processes on a plurality of substrates W. The processing block 9 is divided into a batch processing area R1, a single-wafer processing area R2, a single-wafer substrate conveying area R3, and a batch substrate conveying area R4 arranged in the width direction (Y direction). Each area extends in the front-back direction (X direction). In detail, the batch processing area R1 is arranged on the left side of the processing block 9. The single-wafer processing area R2 is arranged on the right side of the processing block 9. The single-wafer substrate conveying area R3 is arranged at a position sandwiched between the batch processing area R1 and the single-wafer processing area R2, that is, arranged in the center of the processing block 9. The batch substrate conveying area R4 is arranged at the leftmost side of the processing block 9.

[0084] [5.1 Batch processing area]

[0085] The batch processing region R1 in the processing block 9 is a rectangular region extending in the front-rear direction (X direction). One end side (front side) of the batch processing region R1 is adjacent to the transfer block 7. The other end side of the batch processing region R1 extends in a direction away from the transfer block 7 (rear side).

[0086] The batch processing area R1 mainly includes: a batch processing unit for performing batch processing. Specifically, in the batch processing area R1, a plurality of first batch processing units BPU1, a second batch processing unit BPU2, and a third batch processing unit BPU3 are arranged in the direction in which the batch processing area R1 extends, and the plurality of first batch processing units BPU1, the second batch processing unit BPU2, and the third batch processing unit BPU3 are respectively used for immersion processing of a plurality of substrates W at a time. In addition, the batch processing area R1 includes: an underwater posture changing unit 25 for changing the posture of the plurality of substrates W between a horizontal posture and a vertical posture.

[0087] The underwater posture changing unit 25 is adjacent to the transfer block 7 from the rear. The underwater posture changing unit 25 includes: an immersion tank 43 for immersing the batch group in liquid; an elevator LF4 for lifting the batch group; and a posture changing mechanism 45 for changing the posture of the batch group. The immersion tank 43 contains pure water and prevents the substrates W in the tank from drying. The elevator LF4, which has received the batch group from the second transport mechanism WTR at the receiving and transferring position located above the immersion tank 43, lowers the substrate W to the immersion position (equivalent to the processing position in the batch liquid treatment tank CHB1 described later), and immerses the entire area of ​​the substrate W in pure water. In addition, the posture changing mechanism 45 rotates the batch group immersed in pure water by 90 degrees, thereby changing the posture of the substrates W constituting the batch group from the vertical posture to the horizontal posture. The elevator LF4 can lift and lower a batch group consisting of substrates W in a vertical posture, and can also lift and lower a batch group consisting of substrates W in a horizontal posture. The lifter LF4 raises the batch group step by step in units of the arrangement pitch of the substrates W, thereby pulling the horizontally positioned substrates W out of the liquid to the liquid surface one by one. The underwater posture changing unit 25 corresponds to the second posture changing mechanism of the present invention.

[0088] The configuration of the first batch processing unit BPU1, the second batch processing unit BPU2, and the third batch processing unit BPU3 is specifically described. The first batch processing unit BPU1 is adjacent to the underwater posture changing unit 25 from the rear. The second batch processing unit BPU2 is adjacent to the rear of the first batch processing unit BPU1. The third batch processing unit BPU3 is adjacent to the rear of the second batch processing unit BPU2. Therefore, the first batch processing unit BPU1, the second batch processing unit BPU2, and the third batch processing unit BPU3 are separated from the transfer block 7 in this order. In this way, the underwater posture changing unit 25, the first batch processing unit BPU1, the second batch processing unit BPU2, and the third batch processing unit BPU3 are arranged in this order in the extension direction (front-rear direction: X direction) of the batch processing region R1.

[0089] Specifically, the first batch processing unit BPU1 includes: a batch cleaning tank ONB for cleaning the batch group at once; and an elevator LF1 for lifting the batch group. The batch cleaning tank ONB cleans the batch group. The batch cleaning tank ONB contains pure water and is provided for the purpose of cleaning the chemical solution attached to the plurality of substrates W. In the batch cleaning tank ONB, when the resistivity of the pure water in the tank rises to a predetermined value, the cleaning process is terminated.

[0090] The second batch processing unit BPU2 is a location where a plurality of substrates W are transported before arriving at the first batch processing unit BPU1. Specifically, the second batch processing unit BPU2 includes a batch chemical liquid processing tank CHB1 and an elevator LF2 for lifting and lowering the batch group. The batch chemical liquid processing tank CHB1 contains chemical liquids such as phosphoric acid solution. The batch chemical liquid processing tank CHB1 is attached with an elevator LF2, and the elevator LF2 moves the batch group up and down. The batch chemical liquid processing tank CHB1 supplies chemical liquids from the bottom to the top and causes the chemical liquids to convect. The elevator LF2 is lifted and lowered in the vertical direction (Z direction). Specifically, the elevator LF2 is lifted and lowered between a processing position and a receiving and transferring position. The processing position is located inside the batch chemical liquid processing tank CHB1, and the receiving and transferring position is located above the batch chemical liquid processing tank CHB1. The elevator LF2 holds a batch group consisting of substrates W in a vertical posture. The elevator LF2 receives and transfers the batch group between the second transport mechanism WTR at the receiving and transferring position. When the lift LF2 descends from the receiving and transferring position to the processing position while maintaining the batch group, the entire area of ​​the substrate W is located below the liquid surface of the chemical solution. When the lift LF2 ascends from the processing position to the receiving and transferring position while maintaining the batch group, the entire area of ​​the substrate W is located above the liquid surface of the chemical solution. The chemical solution treatment is specifically an acid treatment; although phosphoric acid treatment is exemplified as the acid treatment, it may also be a treatment using other acids. The phosphoric acid treatment performs an etching treatment on the plurality of substrates W constituting the batch group. The etching treatment chemically etches, for example, the nitride film on the surface of the substrate W. The plurality of substrates W that have been treated with the batch chemical solution are subjected to a cleaning treatment by the batch cleaning treatment tank ONB in ​​the first batch processing unit BPU1 described above.

[0091] Specifically, the third batch processing unit BPU3 includes: a batch chemical liquid treatment tank CHB2; and a lift LF3 for lifting and lowering the batch group. The batch chemical liquid treatment tank CHB2 has the same structure as the batch chemical liquid treatment tank CHB1 described above. That is, the batch chemical liquid treatment tank CHB2 contains the chemical liquid described above and is equipped with a lift LF3. The batch chemical liquid treatment tank CHB2 performs the same treatment on the batch group as the batch chemical liquid treatment tank CHB1. The substrate processing device 1 of this example has: a plurality of treatment tanks that can perform the same chemical liquid treatment. This is because phosphoric acid treatment takes more time than other treatments. Phosphoric acid treatment takes a long time (for example, sixty minutes). Therefore, the device of this example is configured to perform acid treatment in parallel through a plurality of batch chemical liquid treatment tanks. Therefore, the batch group performs acid treatment in either the batch chemical liquid treatment tank CHB1 or the batch chemical liquid treatment tank CHB2. According to this structure, the processing capacity of the device is improved.

[0092] Thus, the batch chemical liquid processing tank CHB1 and the batch chemical liquid processing tank CHB2 in the first embodiment are located farther from the transfer block 7 than the batch cleaning processing tank ONB.

[0093] The central robot CR described later can carry the substrates W supported by the elevator LF4 in the underwater posture change unit 25 one by one. At this time, the elevator LF4 can rise to a width component of, for example, five substrates W when the central robot CR approaches to carry the substrates W. In this case, the five substrates W emerge from the liquid surface into the air at the same time. The elevator LF4 moves with a stroke longer than the arrangement pitch of the substrates W, thereby fully ensuring the distance in the vertical direction (Z direction) from the liquid surface of the immersion tank 43 to the central robot CR. Therefore, the front end of the hand 29 of the central robot CR will not be immersed in the liquid contained in the immersion tank 43. After the central robot CR that has obtained the substrates W leaves the elevator LF4, the elevator LF4 is lowered for the purpose of preventing the drying of the four substrates W that are fished out into the air as the elevator LF4 rises. At this time, the elevator LF4 only needs to be lowered to a stroke equivalent to four substrates W, and does not need to be lowered to a stroke equivalent to five substrates W. This is because the topmost substrate W among the five substrates W that have been fished out of the liquid surface is transported by the central robot CR and is not located on the elevator LF4. This configuration can shorten the moving time of the elevator LF4, thereby providing a device with a high throughput. In addition, when the number of substrates W remaining in the elevator LF4 is less than five, the moving distance of the elevator LF4 can be shortened according to the number of insufficient substrates W.

[0094] [5.2 Single-chip processing area

[0095] The wafer processing region R2 in the processing block 9 is a rectangular region extending in the front-rear direction (X direction). One end side (front side) of the wafer processing region R2 is adjacent to the transfer block 7. The other end side of the wafer processing region R2 extends in a direction away from the transfer block 7 (rear side).

[0096] The single-wafer processing area R2 in the processing block 9 mainly includes various chambers related to the processing liquid and various chambers related to the drying process. Specifically, the single-wafer processing area R2 includes: a single-wafer liquid processing chamber SWP1 and a single-wafer liquid processing chamber SWP2, which liquid-process the substrates W one by one; a single-wafer drying processing chamber SWP3, which dries the liquid-processed substrates W one by one; and a buffer section 31, which arranges a plurality of substrates W in a horizontal posture in the vertical direction at the same interval as the carrier C. The single-wafer liquid processing chamber SWP1 is arranged at the innermost side of the front-to-back direction (X direction) in the single-wafer processing area R2. In other words, the single-wafer liquid processing chamber SWP1 is opposite to the batch liquid processing tank CHB2 in the width direction (Y direction) across the single-wafer substrate conveying area R3. The single-wafer liquid processing chamber SWP 2 is adjacent to the front of the single-wafer liquid processing chamber SWP1. The single-wafer drying processing chamber SWP3 is adjacent to the front of the single-wafer liquid processing chamber SWP2. The buffer section 31 is adjacent to the front of the single wafer drying process chamber SWP3. Therefore, the buffer section 31 is provided at a position closest to the transfer block 7 in the single wafer processing region R2. In this way, the buffer section 31, the single wafer drying process chamber SWP3, the single wafer liquid processing chamber SWP2, and the single wafer liquid processing chamber SWP1 are arranged in this order in the extension direction (front-back direction: X direction) of the single wafer processing region R2. The buffer section 31 is equivalent to the substrate placement section of the present invention.

[0097] The single-wafer liquid processing chamber SWP1 and the single-wafer liquid processing chamber SWP2 are respectively provided with: a rotating processing section 33 for rotating the substrate W in a horizontal position; and a nozzle 35 for supplying a processing liquid toward the substrate W. The rotating processing section 33 rotates and drives the substrate W in the XY plane (horizontal plane). The nozzle 35 can swing between a standby position and a supply position, the standby position being a position away from the rotating processing section 33, and the supply position being a position located above the rotating processing section 33. As the processing liquid, IPA (isopropyl alcohol), pure water, or a mixture of these liquids may also be used. The single-wafer liquid processing chamber SWP1 and the single-wafer liquid processing chamber SWP2 are respectively configured, for example, as follows: after the substrate W is cleaned with pure water, a preliminary drying process is performed with IPA.

[0098] The single-wafer drying processing chamber SWP3 is, for example, a supercritical fluid chamber. The supercritical fluid chamber performs a drying process on the substrate W using, for example, carbon dioxide that becomes a supercritical fluid. As a supercritical fluid, fluids other than carbon dioxide may also be used for drying. The supercritical state is obtained by placing carbon dioxide in an environment with a specific critical pressure and critical temperature. The specific pressure is 7.38 MPa and the temperature is 31°C. In the supercritical state, since the surface tension of the fluid becomes zero, the influence of the gas-liquid interface on the circuit pattern on the surface of the substrate W will not be generated. Therefore, as long as the substrate W is dried using a supercritical fluid, the circuit pattern on the substrate W can be prevented from collapsing, that is, the so-called pattern collapse can be prevented.

[0099] Thus, the single wafer drying processing chamber SWP3 in the first embodiment is located closer to the transfer block 7 than the single wafer liquid processing chamber SWP1 and the single wafer liquid processing chamber SWP2.

[0100] The buffer section 31 has a plurality of carriers 39 arranged in the vertical direction (Z direction), and can accommodate at least one batch number (for example, twenty-five) of substrates W. The carriers 39 are arranged at the full pitch described above. The buffer section 31 is used when receiving and transferring batches between the processing block 9 and the transfer block 7. This part is described below. When the batch group is moved out from the processing block 9 to the transfer block 7, first, the central robot CR described later in the processing block 9 places the substrates W that have been dried one by one on the buffer section 31. In this way, a batch number of substrates W are stored in the buffer section 31 at full pitch. Moreover, the batch group stored in the buffer section 31 is held together by the first transport mechanism HTR in the transfer block 7. That is, the central robot CR in the processing block 9 can access the buffer 31 from the width direction (Y direction), and the first transport mechanism HTR in the transfer block 7 can access the buffer 31 from the front-back direction (X direction). In addition, the central robot CR can be raised and lowered in the vertical direction (Z direction) so as to receive and transfer the substrate W between the plurality of carriers 39.

[0101] [5.3 Single-chip substrate transport area]

[0102] The single-wafer substrate transfer area R3 in the processing block 9 is a rectangular area extending in the front-to-back direction (X direction). The single-wafer substrate transfer area R3 is sandwiched between the batch processing area R1 and the single-wafer processing area R2, and one end side is adjacent to the transfer block 7, and the other end side extends in a direction away from the transfer block 7.

[0103] The single-wafer substrate transport area R3 is provided with a central robot CR for transporting substrates W in a horizontal posture. The central robot CR transports substrates W between the underwater posture change unit 25 and the single-wafer liquid processing chambers SWP1, SWP2, the single-wafer drying processing chamber SWP3, and the buffer unit 31. The central robot CR is equivalent to the single-wafer substrate transport mechanism of the present invention. The central robot CR is provided with a hand 29 capable of holding a single substrate W in a horizontal posture. The central robot CR may also be provided with another hand 29 overlapping in the vertical direction (Z direction). The central robot CR can reciprocate in the front-back direction (X direction). Moreover, the central robot CR can also reciprocate in the vertical direction (Z direction). The central robot CR can turn in the XY plane (horizontal plane). Therefore, the hand 29 of the central robot CR rotates around the rotation axis extending in the Z direction, thereby being able to face not only the batch processing area R1 side of the batch processing, but also the single-wafer processing area R2 side of the single-wafer processing. The central robot CR is equivalent to the single-wafer substrate transport mechanism of the present invention.

[0104] The hand 29 of the central robot CR can move forward and backward in the XY plane (horizontal plane). Therefore, the hand 29 can not only receive the substrate W in a horizontal position from the underwater posture changer 25 of the batch processing area R1, but also receive and transfer the substrate W in a horizontal position between each single-wafer liquid processing chamber SWP1, SWP2, and single-wafer dry processing chamber SWP3 of the single-wafer processing area R2. In addition, when the central robot CR has two hands 29, two substrates W are received from the underwater posture changer 25, and the substrates W are received and transferred to different single-wafer liquid processing chambers SWP1 or single-wafer liquid processing chambers SWP2 relative to the single-wafer processing area R2 one by one.

[0105] [5.4 Batch substrate transport area]

[0106] The batch substrate transfer area R4 in the processing block 9 is a rectangular area extending in the front-rear direction (X direction). The batch substrate transfer area R4 is set along the outer edge of the batch processing area R1, with one end side extending to the transfer block 7 and the other end side extending in a direction away from the transfer block 7.

[0107] The batch substrate transport region R4 is provided with a second transport mechanism WTR for transporting a plurality of substrates W at a time. The second transport mechanism WTR transports a plurality of substrates W (specifically, a batch group) at a time between the substrate receiving and transferring position P set in the transfer block 7, the underwater posture changing unit 25, the first batch processing unit BPU1, the second batch processing unit BPU2, and the third batch processing unit BPU3. The second transport mechanism WTR is configured to be able to reciprocate in the front-to-back direction (X direction) throughout the transfer block 7 and the processing block 9. The second transport mechanism WTR can move to the batch substrate transport region R4 in the processing block 9, and can also move to the substrate receiving and transferring position P in the transfer block 7. The second transport mechanism WTR is equivalent to the batch substrate transport mechanism of the present invention.

[0108] The second transport mechanism WTR includes: a pair of hands 23 for transporting batches. The pair of hands 23 includes, for example, a rotation axis facing the width direction (Y direction) and swings around the rotation axis. The pair of hands 23 clamps both ends of a plurality of substrates W constituting a batch. The second transport mechanism WTR receives and transfers batches between the substrate receiving and transferring position P in the transfer block 7, the lift LF4 belonging to the underwater posture changing unit 25, and the lifts LF1 to LF3 belonging to the first batch processing unit BPU1, the second batch processing unit BPU2, and the third batch processing unit BPU3.

[0109] Thus, the substrate processing apparatus 1 of this example arranges the regions in the order of the elongated batch substrate transfer region R4 , the batch processing region R1 , the single substrate transfer region R3 , and the single processing region R2 extending in the front-rear direction (X direction) from left to right.

[0110] [5.5 Window]

[0111] As described above, the buffer section 31 in the processing block 9 is adjacent to the transfer block 7. The first transport mechanism HTR provided in the transfer block 7 can access the buffer section 31. Therefore, the first transport mechanism HTR can receive and transfer a plurality of substrates W placed in the buffer section 31 in a state of being arranged in a horizontal posture in the vertical direction at the same pitch as the carrier C. A window section 77 is provided in the partition wall for separating the transfer block 7 and the processing block 9. Therefore, the first transport mechanism HTR of the transfer block 7 can access the buffer section 31 of the processing block 9.

[0112] The substrate processing device 1 of this example, in addition to the various parts described above, also has: a CPU (Central Processing Unit) 75, which controls each mechanism and each processing unit; and a storage unit 76, which stores various information required for the processing process such as programs and set values. In addition, the specific structure of the CPU is not particularly limited. It is also possible to have one CPU in the entire device, or to have one or more CPUs in each block. This part is also the same for the storage unit 76. The control performed by the CPU is, for example, control related to the actions of the first transport mechanism HTR, the second transport mechanism WTR, the HVC posture change unit 20, the pusher mechanism 22, and the central robot CR.

[0113] [Substrate processing flow]

[0114] Figure 4 1 is a flowchart for explaining the process of substrate processing in this example. The substrate processing in this example performs various processes related to etching of the surface of a substrate W in a semiconductor device manufacturing process, for example. The process of substrate processing will be specifically explained below according to this flowchart.

[0115] Step S11: The carrier C for storing the unprocessed substrate W is placed on the loading platform 15 of the loading unit 11. Then, the carrier C is taken into the device from the loading unit 11 and placed on the carrier loading rack 21a (see FIG. 2 ) for receiving and transferring the substrate W provided in the storage block 5 by the conveying mechanism 19. Figure 5 ).

[0116] Step S12: The first transport mechanism HTR provided in the transfer block 7 takes out the plurality of substrates W from the carrier C of the carrier mounting rack 21a at a time. Then, the first transport mechanism HTR transfers the plurality of substrates W in a horizontal posture to the HVC posture changing unit 20. The HVC posture changing unit 20 changes the posture of the plurality of substrates W from a horizontal posture to a vertical posture, and transfers the plurality of substrates W to the pusher mechanism 22. The pusher mechanism 22 transports the substrates W in a vertical posture to the substrate receiving and transferring position P (refer to FIG. 1 ) while being arranged in the width direction (Y direction). Figure 5 ).

[0117] Step S13: Perform batch processing. Specifically, the batch group waiting at the substrate receiving and transferring position P is lifted up to the vertical direction (Z direction) by the second conveying mechanism WTR and then conveyed to the front-to-back direction (X direction). The plurality of substrates W in the vertical posture are transferred to the elevator LF2 of the second batch processing unit BPU2 or the elevator LF3 of the third batch processing unit BPU3 while being arranged in the width direction (Y direction). At this time, the second conveying mechanism WTR retreats in the X direction and passes through the underwater posture changing part 25 and the air above the second batch processing unit BPU2. The elevators LF2 and LF3 for receiving the substrates W are located at the receiving and transferring position. In this way, the batch group is located on the liquid surface of either the batch liquid processing tank CHB1 or the batch liquid processing tank CHB2. Figure 5 The batch group is shown as an example of being processed in the batch chemical liquid processing tank CHB1. The lift LF2 that has received the batch group descends and immerses the batch group in the batch chemical liquid processing tank CHB1. In this way, the chemical liquid treatment is performed on the batch group.

[0118] When the liquid chemical treatment is completed, the lift LF2 makes the batch group emerge from the batch liquid chemical treatment tank CHB1 on the liquid surface. After that, the batch group is lifted together by the second transport mechanism WTR to the vertical direction (Z direction), and then transported to the front-to-back direction (X direction). The substrate W in the vertical posture is transferred to the lift LF1 of the first batch processing unit BPU1 while being arranged in the width direction (Y direction). At this time, the second transport mechanism WTR moves forward in the X direction. That is, the batch processing in this example is achieved by the second transport mechanism WTR turning back and forth at the second batch processing unit BPU2. In addition, the lift LF1 is located at the receiving and transferring position when the batch group is transferred. In this way, the batch group is located on the liquid surface in the batch cleaning treatment tank ONB. The lift LF1 that has received the batch group descends and immerses the batch group in the batch cleaning treatment tank ONB. In this way, the cleaning process is performed on the batch group (refer to Figure 5 ).

[0119] When the cleaning process is finished, the lift LF1 makes the batch group appear on the liquid surface from the batch cleaning tank ONB. After that, the batch group is lifted up by the second transport mechanism WTR in the vertical direction (Z direction) and then transported in the front-back direction (X direction). The plurality of substrates W in the vertical posture are transferred to the underwater posture changing unit 25 (see FIG. 25 ) while being arranged in the width direction (Y direction). Figure 5 ). At this time, the lift LF4 of the underwater posture changing unit 25 is on standby in a posture of the batch group that can maintain a vertical posture. In addition, the lift LF4 at this time is located at the receiving and delivering position.

[0120] As described above, in step S13, the second transport mechanism WTR receives a plurality of substrates W in a vertical posture at the substrate receiving and transferring position P of the transfer block 7, and sequentially transports the received plurality of substrates W to the second batch processing unit BPU2 (or the third batch processing unit BPU3) for liquid treatment, the first batch processing unit BPU1 for cleaning treatment, and the underwater posture change unit 25.

[0121] Step S14: Here, posture transformation is performed as a batch processing process. Figure 6 This is used to explain the process related to the posture change in the entire process of substrate processing. In the underwater posture change unit 25, the lift LF4 located at the receiving and transferring position receives the batch group, and the lift LF4 moves to the immersion position. In this way, the batch group is located below the liquid surface of the immersion tank 43. Next, the posture change mechanism 45 rotates the batch group 90° in the water, thereby changing the posture of the plurality of substrates W from the vertical posture to the horizontal posture. As the rotation direction at this time, the surface of the substrate W on which the circuit pattern is formed is selected to be facing upward. As described above, the underwater posture change unit 25 changes the posture of the plurality of substrates W in the vertical posture that have been received into a horizontal posture.

[0122] Step S15: Here, a single-chip process belonging to the process after the posture change process is executed. Figure 7 The process related to the single wafer processing in the whole process of substrate processing is explained. The substrates W in the horizontal posture waiting in the underwater posture changing unit 25 are lifted up one by one in the vertical direction (Z direction) by the central robot CR and then transported to either the single wafer liquid processing chamber SWP1 or the single wafer liquid processing chamber SWP2. Figure 7 The substrate W is placed in the single wafer liquid processing chamber SWP1 as an example. The substrate W that has been pre-dried in the single wafer liquid processing chamber SWP1 is lifted up in the vertical direction (Z direction) by the central robot CR and then transferred to the single wafer drying processing chamber SWP3. Then, the substrate W is placed in the supercritical fluid chamber 37 and subjected to drying.

[0123] Step S16: Place the processed substrate W in the buffer 31. Specifically, the substrate W that has been dried is taken out from the supercritical fluid chamber 37 by the central robot CR and placed in the buffer 31. When this substrate transfer continues, the buffer 31 holds 25 substrates W arranged in a vertical direction (Z direction) at full pitch in a horizontal position. In this way, the buffer 31 holds the batch group of processed substrates (see Figure 7). In addition, as described in step S15 and this step, the central robot CR sequentially transports the substrates W that have been transformed into a horizontal posture by the underwater posture transformation unit 25 to the single-wafer liquid processing chamber SWP1, the single-wafer drying processing chamber SWP3, and the buffer unit 31 one by one.

[0124] Step S17 : The plurality of substrates W placed on the buffer portion 31 are stored in the carrier C. Figure 8 This is used to explain the process related to the batch group transportation in the entire process of substrate processing. The batch group held by the buffer section 31 is held collectively by the first transport mechanism HTR. Then, the batch group is returned to the empty carrier C waiting on the carrier rack 21a in the storage block 5. Since the substrate processing in this example assigns a correspondence between the carrier C and the batch group inside the carrier C, the batch group taken out from the carrier C is returned to the same carrier C after various processes. The carrier C storing the batch group moves to the removal section 13 provided on the side wall of the loading and unloading block 3. That is, when the buffer section 31 in the processing block 9 carries a plurality of substrates W, the first transport mechanism HTR takes out the plurality of substrates W from the buffer section 31 collectively and stores the taken-out plurality of substrates W collectively in the carrier C.

[0125] Step S18: The transport mechanism 19 transports the carrier C to the mounting table 17, and removes the carrier C from the mounting table 17. In this way, the substrate processing performed by the substrate processing apparatus 1 of this example is completed.

[0126] As described above, according to this example, a buffer section 31 is provided in the single-wafer processing area R2, and the buffer section 31 can allow both the first transport robot HTR and the central robot CR to receive and transfer the substrate W. Therefore, the first transport mechanism HTR can receive the substrate W from the single-wafer processing area R2 at a time via the buffer section 31. In addition, the central robot CR can transfer the substrates W processed in the single-wafer liquid processing chamber SWP1, the single-wafer liquid processing chamber SWP2, and the single-wafer drying processing chamber SWP3 to the buffer section 31 one by one. According to this structure, the substrate W is carried in and out of the carrier C at a time through the first transport mechanism HTR. Therefore, the potential of the first transport mechanism HTR can be stimulated, so that a substrate processing device 1 with a high processing capacity can be provided. In addition, according to the present invention, the underwater posture change unit 25 is located between the transfer block 7 where the first transport mechanism HTR is provided and the batch liquid treatment tank CHB1. Thus, according to this configuration, the batch chemical liquid processing tank CHB1 is separated from the transfer block 7 by the amount where the underwater posture changing unit 25 is installed. Therefore, according to this example, the first transport mechanism HTR in the transfer block 7 is prevented from being corroded by the phosphoric acid in the batch chemical liquid processing tank CHB1 as much as possible. Thus, according to the present invention, it is possible to provide a substrate processing apparatus 1 that has few failures in the first transport mechanism HTR and can reliably transport substrates.

[0127] Furthermore, according to this example, the plurality of substrates W are subjected to liquid treatment in the batch liquid treatment tank CHB1 in the batch processing area R1 which is far from the transfer block 7. Thereafter, the plurality of substrates W are subjected to cleaning treatment in the batch cleaning treatment tank ONB in ​​the batch processing area R1 which is close to the transfer block 7. Then, after the cleaning treatment, the plurality of substrates W are transformed from a vertical posture to a horizontal posture by the underwater posture transformation unit 25 which is closest to the transfer block 7. The plurality of substrates W transformed into a horizontal posture enter a standby state for single-wafer processing. In this way, according to the configuration of the first embodiment, since the batch cleaning tank ONB is located between the transfer block 7 and the batch liquid treatment tank CHB1, the distance between the transfer block 7 and the batch liquid treatment tank CHB1 is further away, so that a substrate processing device can be provided which has fewer failures of the first transport mechanism HTR and can reliably transport the substrates W.

[0128] [Example 2]

[0129] Next, the substrate processing apparatus 2 of the second embodiment is described. The difference between the substrate processing apparatus 2 of this example and the apparatus of the first embodiment is that the single-wafer processing is performed before the batch processing. The specific process of the substrate processing is described later.

[0130] Fig. 9 The overall structure of the substrate processing apparatus 2 is described. The loading and unloading block 3, the storage block 5, and the transfer block 7 in the substrate processing apparatus 2 are the same as those of the apparatus of the first embodiment. In addition, the point where the central robot CR is provided in the single-wafer substrate transfer area R3 in the processing block 9 and the point where the second transfer mechanism WTR is provided in the batch substrate transfer area R4 are also the same as those of the apparatus of the first embodiment. The apparatus of this example is characterized by the batch processing area R1 and the single-wafer processing area R2 in the processing block 9.

[0131] [Batch processing area]

[0132] In the batch processing area R1 of the processing block 9 of this example, in the direction away from the transfer block 7 (front-back direction: X direction), the underwater posture changing unit 25, the first batch processing unit BPU1, the second batch processing unit BPU2, and the third batch processing unit BPU3 are arranged in order. The first batch processing unit BPU1 has a batch drying chamber DC, which is used to dry a plurality of substrates W constituting a batch group; the second batch processing unit BPU2 has the batch cleaning processing tank ONB and the elevator LF2 described above; and the third batch processing unit BPU3 has the batch chemical liquid processing tank CHB and the elevator LF3 described above. The batch drying chamber DC is located closer to the transfer block 7 than the batch cleaning processing tank ONB. The batch cleaning processing tank ONB is located on the side closer to the transfer block 7 than the batch chemical liquid processing tank CHB. In this way, the common point between the apparatus of the second embodiment and the apparatus of the first embodiment is that the underwater posture changing unit 25 is located at the innermost side relative to the transfer block 7. However, the difference between the apparatus of the second embodiment and the apparatus of the first embodiment is that the batch drying chamber DC related to the drying of the substrates W is located on the front side of the transfer block 7 rather than the batch cleaning processing tank ONB.

[0133] The batch drying chamber DC has: a drying chamber that accommodates a batch group formed by arranging substrates W in a vertical posture. The drying chamber has: an inert gas supply nozzle that supplies inert gas into the chamber; and a vapor supply nozzle that supplies vapor of an organic solvent into the tank. The batch drying chamber DC first supplies inert gas to the batch group supported in the chamber, and replaces the atmosphere in the chamber with the inert gas. Then, the chamber begins to be depressurized. In the state where the chamber is depressurized, vapor of an organic solvent is supplied into the chamber. The organic solvent is discharged to the outside of the chamber together with the moisture attached to the substrate W. In this way, the batch drying chamber DC performs drying of the batch group. At this time, the inert gas may be, for example, nitrogen, and the organic solvent may be, for example, IPA.

[0134] [Single chip processing area]

[0135] In the single-wafer processing area R2 of the processing block 9 of this example, a buffer section 31 and single-wafer liquid processing chambers SWP1, SWP2 and a single-wafer drying processing chamber SWP3 for processing substrates W one by one are arranged in order in the direction away from the transfer block 7 (front-to-back direction: X direction).

[0136] The single-wafer liquid processing chambers SWP1, SWP2 and the single-wafer drying processing chamber SWP3 can perform liquid treatment related to the removal of the resist. That is, the nozzles 35 of these single-wafer processing units can supply liquid in which oxygen and ozone are dissolved in pure water. When the liquid is supplied to the surface of the substrate W that is rotated by the rotating processing unit 33, the resist formed on the surface is removed from the substrate W. Specifically, the resist can be a phenolic varnish positive resist. The single-wafer liquid processing chambers SWP1, SWP2 and the single-wafer drying processing chamber SWP3 can also supply pure water to the substrate W. When pure water is supplied to the substrate W, the resist remaining on the substrate W can flow out from the substrate W. In addition, the single-wafer liquid processing chambers SWP1, SWP2 and the single-wafer drying processing chamber SWP3 are structures for pre-treatment of batch processing, and the specific processing content is not particularly limited.

[0137] [Substrate processing flow]

[0138] Fig.10 1 is a flowchart for explaining the process of substrate processing in this example. The substrate processing in this example is used, for example, to perform various processes related to the removal of resist on the surface of a substrate W in a semiconductor device manufacturing process. The process of substrate processing will be specifically explained below according to the flowchart.

[0139] Step S21: An unprocessed substrate W is introduced into the substrate processing apparatus 2. Specifically, a carrier C for storing the unprocessed substrate W is placed on the loading table 15 in the loading section 11 of the apparatus. Then, the carrier C is taken into the apparatus from the loading section 11 and is placed on the carrier loading rack 21a (see FIG. 2 ) provided in the storage block 5 by the transport mechanism 19. Fig.11 ).

[0140] Step S22: Place the batch set on the buffer section 31. Specifically, the first transport mechanism HTR provided in the transfer block 7 takes out the plurality of substrates W in a horizontal posture from the carrier C at once. Then, the first transport mechanism HTR places the batch set on the buffer section 31 (see FIG. 1 ) while maintaining the posture of the plurality of substrates W. Fig.11 ).

[0141] Step S23: Performing single wafer processing Specifically, the substrates W placed in a horizontal position on the buffer 31 are gripped one by one by the central robot CR and carried into any one of the single wafer liquid processing chambers SWP1 and SWP2 and the single wafer drying processing chamber SWP3. Fig.12 This is used to illustrate the movement of the substrate W in this step. Fig.12In the process, the substrate W is transported to the single-wafer liquid processing chamber SWP1 and subjected to treatment related to the removal of the resist. The substrate W from which the resist has been removed is transported by the central robot CR to the underwater posture change unit 25. At this time, the underwater posture change unit 25 is on standby with the substrate W being able to maintain a horizontal posture. When the elevator LF4 of the underwater posture change unit 25 receives the substrate W, it descends to the full pitch width and immerses the received substrate W into the water. The elevator LF4 repeats this action each time the central robot CR carries in the substrate W. As a result, the substrates W in the horizontal posture are arranged in the vertical direction at the full pitch on the elevator LF4. As described above, the central robot CR transports the plurality of substrates W placed on the buffer unit 31 one by one in sequence to any one of the single-wafer liquid processing chambers SWP1, SWP2, the single-wafer drying processing chamber SWP3, and the horizontal posture change unit 25.

[0142] Step S24: The plurality of substrates W are collectively transformed from the horizontal posture to the vertical posture. Fig.13 The process related to the posture change in the entire process of substrate processing is described. In the underwater posture change unit 25, the lift LF4 located at the receiving and transferring position receives the substrates W one by one, and each time the lift LF4 descends to a distance corresponding to the full pitch. In this way, the substrates W are sequentially located below the liquid surface of the immersion tank 43. When this action is repeated, all the substrates W used to constitute the batch group are stored in the immersion tank 43. After the substrates W of a batch group are stored in the immersion tank 43, the posture change mechanism 45 rotates the batch group 90° in water, thereby changing the posture of the plurality of substrates W from the horizontal posture to the vertical posture. In this way, the underwater posture change unit 25 changes the posture of the substrates W received one by one in the horizontal posture into the vertical posture at the same time. As described above, the underwater posture change unit 25 receives the substrates W in the horizontal posture one by one. When the number of substrates W received reaches a predetermined number (for example, twenty-five), the plurality of substrates W in the horizontal posture are changed into the vertical posture at the same time. All substrates W that have undergone posture changes are stored in the same carrier C.

[0143] Step S25: Batch processing of a plurality of substrates W is performed. Specifically, the batch group waiting at the underwater posture changing unit 25 is lifted up in the vertical direction (Z direction) by the second conveying mechanism WTR, and then conveyed to the front-to-back direction (X direction). The plurality of substrates W in the vertical posture are transferred to the elevator LF3 of the third batch processing unit BPU3 while being arranged in the width direction (Y direction). The elevator LF3 that has received the substrate W is located at the receiving and transferring position. In this way, the batch group is located on the liquid surface in the batch liquid treatment tank CHB. The elevator LF3 that has received the batch group descends and immerses the batch group in the batch liquid treatment tank CHB. In this way, liquid treatment is performed on the batch group.

[0144] After the chemical treatment, the cleaning process performed on the batch group in the batch cleaning tank ONB of the second batch processing unit BPU2 for cleaning is the same as that of the device of the first embodiment.

[0145] When the cleaning process is finished, the lift LF2 of the second batch processing unit BPU2 makes the batch group appear on the liquid surface from the batch cleaning tank ONB. After that, the batch group is lifted up in the vertical direction (Z direction) by the second transport mechanism WTR and then transported in the front-back direction (X direction). The plurality of substrates W in the vertical posture are transferred to the batch drying chamber DC in a state arranged in the width direction (Y direction) and dried in batch (refer to FIG. Fig.14 As described above, the second transport mechanism WTR receives the plurality of substrates W in the vertical posture in the underwater posture conversion unit 25 at once, and sequentially transports the received plurality of substrates W to the third batch processing unit BPU3, the second batch processing unit BPU2, and the batch drying chamber DC.

[0146] Step S26: After the substrate W is dried, it is also changed from a vertical posture to a horizontal posture. Specifically, the batch groups held by the batch drying chamber DC of the first batch processing unit BPU1 are held by the second transport mechanism WTR. At this time, the second transport mechanism WTR moves forward in the X direction and passes over the underwater posture changer 25. Then, the batch group is transferred to the substrate receiving and transferring position P in the transfer block 7. The pusher mechanism 22 transports the batch group in the vertical posture waiting at the substrate receiving and transferring position P to the HVC posture changer 20. Fig.15 As shown in FIG. 1 , the HVC posture changing unit 20 changes the postures of the plurality of substrates W from the vertical posture to the horizontal posture at once. Fig.15 As shown in (a) of FIG. 1 , the pusher 22A located at the upper position descends and transports the plurality of substrates W to the vertical holding portion 20C. Since the vertical holding portion 20C is provided with a V-groove, each substrate W held by the pusher 22A is clamped and held by the V-groove. When the pusher 22A further descends from here, as shown in FIG. Fig.15 As shown in (b) in FIG. 1 , the plurality of substrates W are separated from the pusher 22A and held by the HVC posture changing unit 20. In this state, when the support table 20A of the HVC posture changing unit 20 is rotated 90° counterclockwise, as shown in FIG. Fig.15 As shown in (c) in FIG. 1 , the plurality of substrates W are held by the recessed portion of the horizontal holding portion 20B of the HVC posture changing portion 20 and are changed to a horizontal posture.

[0147] Step S27: The plurality of substrates W converted to the horizontal posture are stored in the carrier C at once. Specifically, the batch group formed by arranging the substrates W in the horizontal posture maintained by the HVC posture conversion unit 20 is received at once by the first transport mechanism HTR and returned to the empty carrier C waiting on the carrier rack 21a in the storage block 5. Since the substrate processing in this example assigns correspondence between the carrier C and the batch group inside the carrier C, the batch group taken out from the carrier C is returned to the same carrier C after various processing. The carrier C storing the batch group moves to the removal unit 13 provided on the side wall of the loading and unloading block 3.

[0148] Step S28: Remove the carrier C storing the plurality of substrates W from the apparatus. In this way, the substrate processing performed by the substrate processing apparatus 2 of this example is completed.

[0149] As described above, according to this example, a buffer section 31 is provided in the single-wafer processing area R2, and the buffer section 31 can allow both the first transport robot HTR and the central robot CR to receive and transfer the substrate W. Therefore, the first transport mechanism HTR can receive and transfer the substrate W to the single-wafer processing area R2 via the buffer section 31. In addition, the central robot CR can receive and transfer the substrates W taken out piece by piece from the buffer section 31 to the single-wafer liquid processing chambers SWP1, SWP2, and the single-wafer drying processing chamber SWP 3. According to this structure, the substrate W is carried in and out of the carrier C by the first transport mechanism HTR. Therefore, the potential of the first transport mechanism HTR can be stimulated, so that a substrate processing device 2 with a high processing capacity can be provided.

[0150] The present invention is not limited to the above-described configuration, and can be implemented in various modified forms as described below.

[0151] [Variation 1]

[0152] In the first embodiment, for example, fifty substrates W arranged at half pitch are arranged in a face-to-back manner with their device surfaces facing the same direction. However, the present invention is not limited to this, and for example, fifty substrates W may be arranged face-to-face. The advantage of arranging fifty substrates W face-to-face is that the device surface of the first substrate W in the batch group can be directed toward the second substrate W, and the device surface of the 50th substrate W in the batch group can be directed toward the 49th substrate W. In this way, as long as the device surfaces of the substrates W at both ends of the batch group face inward, the batch group can be transported in a state where the device surfaces of the substrates W are protected. Therefore, as long as the substrates W are arranged face-to-face, the desired circuit pattern can be reliably formed on the substrates W.

[0153] The formation of a batch group in a face-to-face manner is performed by the HVC posture changer 20 and the pusher mechanism 22 in the transfer block 7. In order to form the batch group, first, the HVC posture changer 20 sets, for example, twenty-five first substrates W1 in a horizontal posture to a vertical posture. Next, the first substrate W1 after the posture change is lifted by the pusher 22A. After that, the first substrate W1 is flipped left and right, thereby flipping the device surface in the first substrate W1. In this way, the HVC posture changer 20 sets, for example, twenty-five second substrates W2 in a horizontal posture to a vertical posture. Finally, the pusher 22A picks up the second substrate W2 to complete the batch group. In this way, the first substrate W1 is flipped and incorporated into the batch group, while the second substrate W2 is not flipped and incorporated into the batch group. Therefore, the orientation of the device surface is different between the first substrate W1 and the second substrate W2. Since the first substrate W1 and the second substrate W2 are arranged alternately, the generated batch group is a face-to-face manner in which the device surfaces of the adjacent substrates W are opposite to each other.

[0154] Below, refer to Fig.16 The various processes of batch group formation are described in detail. In the batch group formation process, the operation until the pusher 22A picks up the first substrate W1 is different from that in the first embodiment. Figure 3 (a) to (c) are the same, so the description is omitted. Fig.16 Describe the subsequent actions. Fig.16 (a) is the same as that described above. Figure 3 In the figure corresponding to (d) in FIG. 1 , the pusher 22A does not shift in the Y direction as in the embodiment, but instead is shown to be rotated 180°. Through this action, all the device surfaces of the first substrate W1 facing the left direction are facing the right direction. In addition, at this time, the phase displacement of the arrangement of the first substrate W1 reaches half the pitch. In order to achieve this displacement action, the rotation center of the pusher 22A is slightly offset from the center of the arrangement of the first substrate W1 (to half the width of the half pitch) in the arrangement direction.

[0155] Fig.16 (b) is the same as that described above. Figure 3 , and shows the state when the support table 20A holding the second substrate W2 is rotated 90°. At this time, since the device surface of the second substrate W2 in a horizontal posture faces upward, the device surface is all facing leftward.

[0156] Fig.16 (c) is the same as that described above. Figure 3 The first substrate W1 is rotated 180°, whereby the phase shift of the arrangement reaches half the pitch, so that Figure 3Similarly to the case (f) in FIG. 1 , the second substrate W2 clamped by the vertical holding portion 20C is stored in the empty groove between the first substrate W1 on the upper surface of the pusher 22A in a manner that does not interfere with the first substrate W1. In this way, a batch group is formed in which the first substrate W1 and the second substrate W2 are arranged alternately in a face-to-face manner, with the first substrate W1 device surface facing the right direction and the second substrate W2 device surface facing the left direction. The pusher mechanism 22 can transport the formed batch group to the substrate receiving and transferring position P.

[0157] In the first embodiment, when the central robot CR accesses the underwater posture changer 25, the underwater posture changer 25 rotates the substrates W by 180 degrees at a time. Therefore, when performing single-wafer processing, all substrates W have the surfaces with circuit patterns facing upward.

[0158] [Variation 2]

[0159] The underwater posture changing unit 25 of the present invention changes the posture of the substrate arrangement in water, but the present invention is not limited to this configuration. The posture changing unit may also be configured in a manner that the posture changing is performed in the air, or may be configured with a sprayer for spraying liquid such as pure water onto the substrate W.

[0160] [Variation 3]

[0161] The device of the present invention is provided with a central robot CR having a hand composed of a pair of arms, but a central robot CR having two hands may be provided to replace the above structure. The two hands may be arranged up and down respectively, and the upper hand may be used as a hand for transporting the substrate after the drying process, and the lower hand may be used as a hand for transporting the substrate before the drying process. With this structure, since a wet hand will not hold the substrate W after the drying process, the dry state of the substrate W can be reliably maintained. In addition, the hand for transporting the substrate W after the drying process is arranged above the hand for transporting the substrate W before the drying process, so that the liquid attached to the hand for transporting the substrate before the drying process will not drip on the hand for transporting the substrate after the drying process, and the dry state of the hand for transporting the substrate after the drying process can be reliably maintained.

[0162] [Variation 4]

[0163] The device described above is a structure in which a central robot CR is provided, but it can also be configured as follows Fig.17As shown, a plurality of central robots CR1 and CR2 that can move in the front-rear direction (X direction) are provided. In this case, the retreat area ES for retreating the central robot CR2 located at the inner side when viewed from the transfer block 7 among the central robots can be set at the inner side of the single substrate conveying area R3 in the processing block 9. With this configuration, the central robot CR1 located at the front when viewed from the transfer block 7 can reliably access the underwater posture change unit 25 or the single substrate liquid processing chamber SWP1. That is, as long as the central robot CR2 located at the inner side when viewed from the transfer block 7 is retreated to the retreat area ES, the central robot CR1 can be reliably located in the underwater posture change unit 25 or the single substrate liquid processing chamber SWP1. Since the central robot CR2 at this time is located further inward than the batch liquid processing tank CHB2 and the like, it will not hinder the movement of the central robot CR1. In addition, one of the central robots CR1 and CR2 can be used as a central robot for conveying substrates before drying, and the other of the central robots CR1 and CR2 can be used as a central robot for conveying substrates after drying. According to this structure, since a robot for conveying substrates W after drying is provided independently of a robot for conveying substrates W before drying, substrates W before drying and substrates W after drying can be conveyed simultaneously, thereby increasing the processing capacity of the substrate processing device. In addition, since the robot for conveying substrates W after drying will not hold wet substrates W before drying, substrates W after drying will not be conveyed while the robot for conveying substrates W after drying is wet. Therefore, through this structure, a substrate processing device that reliably maintains the dry state of substrates W can be provided.

[0164] Description of Reference Numerals

[0165] 5: Storage Block

[0166] 7: Move block

[0167] 9: Processing blocks

[0168] 20: HVC posture changing unit (first posture changing mechanism)

[0169] 21a: Loading rack (carrier loading rack)

[0170] 25: underwater posture changing unit (second posture changing mechanism)

[0171] 31: Buffer section (substrate mounting section)

[0172] C: Carrier

[0173] CHB: Batch Chemical Treatment Tank (Batch Treatment Tank)

[0174] CHB1: Batch liquid treatment tank (batch treatment tank)

[0175] CHB2: Batch liquid treatment tank (batch treatment tank)

[0176] CR: Central robot (single substrate handling mechanism)

[0177] DC: Batch Drying Chamber

[0178] HTR: First transport mechanism (substrate handling mechanism)

[0179] ONB: Batch cleaning tank (batch tank)

[0180] P: Substrate receiving and transfer position

[0181] R1: Batch processing area

[0182] R2: Monolithic processing area

[0183] R3: Single substrate handling area

[0184] R4: Batch substrate handling area

[0185] SWP3: Single Wafer Drying Processing Chamber (Single Wafer Processing Chamber)

[0186] SWP1: Single Wafer Drying Processing Chamber (Single Wafer Processing Chamber)

[0187] SWP2: Single Wafer Liquid Processing Chamber (Single Wafer Processing Chamber)

[0188] W: substrate

[0189] WTR: Second transport mechanism (batch substrate transport mechanism)

Claims

1. A substrate processing device for continuously performing batch processing of processing a plurality of substrates at once and single processing of processing substrates one by one, wherein: The substrate processing device comprises: Storage blocks, a transfer block adjacent to the storage block, and a processing block, adjacent to the transfer block; The storage block is used to accommodate at least one carrier, and has at least one carrier loading rack for taking out and storing substrates. The carrier stores a plurality of substrates in a horizontal posture at predetermined intervals in a vertical direction, and the carrier loading rack is used to load the carrier so as to carry in and out the substrates relative to the carrier. The transfer block has: a substrate operating mechanism for collectively taking out and storing a plurality of substrates from the carrier placed on the carrier rack, and A first posture changing mechanism changes the postures of the plurality of substrates between a horizontal posture and a vertical posture at the same time; The processing block has: The batch processing area has one end side adjacent to the transfer block and the other end side extending in a direction away from the transfer block. The single-wafer processing area has one end side adjacent to the transfer block and the other end side extending in a direction away from the transfer block. a single-wafer substrate conveying area, sandwiched between the batch processing area and the single-wafer processing area, with one end side adjacent to the transfer block and the other end side extending in a direction away from the transfer block, and A batch substrate transport area is arranged along the batch processing area, one end side of which extends to the transfer block, and the other end side of which extends in a direction away from the transfer block; In the batch processing area, a plurality of batch processing tanks are arranged in a direction in which the batch processing area extends, and a second posture changing mechanism is provided at a position closest to the transfer block, the batch processing tanks are used for immersion processing of a plurality of substrates at a time, at least one of the batch processing tanks is a batch liquid processing tank for containing a liquid for acid-treating a plurality of substrates at a time, and the second posture changing mechanism changes the posture of the plurality of substrates between a vertical posture and a horizontal posture at a time; In the single-wafer processing area, a plurality of single-wafer processing chambers are arranged in a direction in which the single-wafer processing area extends, and a substrate loading unit is provided at a position closest to the transfer block, the single-wafer processing chamber processes substrates one by one, and the substrate loading unit loads a plurality of substrates in a horizontal posture in a vertical direction at the same predetermined interval as the carrier; The single-chip substrate transporting area is provided with: a single-chip substrate transporting mechanism for transporting substrates between the second posture changing mechanism, the single-chip processing chamber and the substrate placing portion; The batch substrate conveying area is provided with: a batch substrate conveying mechanism for conveying a plurality of substrates at a time between a substrate receiving and transferring position set in the transfer block, the batch processing tank and the second posture changing mechanism; The substrate handling mechanism of the transfer block is further configured to be able to collectively receive and transfer a plurality of substrates between the substrate placement section of the single-wafer processing area.

2. The substrate processing apparatus according to claim 1, wherein: In the batch processing area there are: The batch liquid treatment tank, and A batch cleaning tank for storing a cleaning solution for cleaning a plurality of substrates that have been treated with a chemical solution at the same time; The batch liquid treatment tank is located further away from the transfer block than the batch cleaning treatment tank; The monolithic processing area has: A monolithic liquid processing chamber that liquid processes substrates on a wafer-by-wafer basis, and A single-wafer drying process chamber dries liquid-treated substrates one by one; The single-wafer drying processing chamber is located closer to the transfer block than the single-wafer liquid processing chamber; In the transfer block, the substrate operation mechanism takes out a plurality of substrates from the carrier at a time, and the first posture conversion mechanism converts the taken-out plurality of substrates from a horizontal posture to a vertical posture; In the processing block, the batch substrate conveying mechanism receives a plurality of substrates in a vertical posture at the substrate receiving and transferring position of the transfer block, and sequentially conveys the received plurality of substrates to the batch liquid treatment tank, the batch cleaning treatment tank, and the second posture conversion mechanism; the second posture conversion mechanism converts the received plurality of substrates in a vertical posture into a horizontal posture; the single-piece substrate conveying mechanism sequentially conveys the substrates converted into a horizontal posture by the second posture conversion mechanism to the single-piece liquid treatment chamber, the single-piece drying treatment chamber, and the substrate placement section one by one; In the transfer block, when a plurality of substrates are placed on the substrate placement section in the processing block, the substrate handling mechanism collectively takes out the plurality of substrates from the substrate placement section and collectively accommodates the taken-out plurality of substrates in the carrier.

3. The substrate processing apparatus according to claim 1, wherein: The single-wafer processing area is provided with: a single-wafer liquid processing chamber for liquid processing substrates piece by piece; In the batch processing area there are: The batch liquid treatment tank, a batch cleaning tank for storing a cleaning solution for collectively cleaning a plurality of substrates that have been treated with a chemical solution, and A batch drying chamber dries a plurality of cleaned substrates at the same time; The batch drying chamber is located closer to the transfer block than the batch cleaning tank; The batch cleaning treatment tank is located on a side closer to the transfer block than the batch liquid treatment tank; In the transfer block, the substrate handling mechanism takes out a plurality of substrates from the carrier at once and places them on the substrate placing portion in the processing block; In the processing block, the single-sheet substrate conveying mechanism conveys the plurality of substrates placed on the substrate placing portion sequentially toward the single-sheet liquid processing chamber and the second posture changing mechanism one by one, and the second posture changing mechanism changes the posture of the plurality of substrates in the horizontal posture into a vertical posture when receiving the plurality of substrates in the horizontal posture, and the batch substrate conveying mechanism receives the plurality of substrates in the vertical posture at the same time in the second posture changing mechanism, and conveys the received plurality of substrates sequentially toward the batch liquid treatment tank, the batch cleaning treatment tank, the batch drying chamber, and the substrate receiving and transferring position in the transfer block; In the transfer block, the first posture conversion mechanism converts the plurality of substrates received at the substrate receiving and transferring position from a vertical posture to a horizontal posture, and the substrate handling mechanism stores the plurality of substrates in the horizontal posture collectively in the carrier.

4. The substrate processing apparatus according to claim 2, wherein: The single-wafer drying process chamber dries the substrate by means of a supercritical fluid.

5. The substrate processing apparatus according to claim 1, wherein: The single-chip substrate transport mechanism comprises: A first hand portion, for carrying a substrate before drying; and The second hand is arranged on the upper part of the first hand and carries the substrate after the drying process.

6. The substrate processing apparatus according to claim 1, wherein: The single-chip substrate transport mechanism comprises: A first robot, for carrying the substrate before drying; and The second robot carries the substrate after drying.

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