Method for manufacturing semiconductor substrate

Abstract

The invention discloses a manufacturing method of a semiconductor substrate. The manufacturing method comprises the following steps: providing a semiconductor substrate base material, wherein the semiconductor substrate base material comprises a silicon-containing material; in a vacuum environment, irradiating the surface of the semiconductor substrate base material to melt the surface to form a liquid surface; and depositing a thin film layer on the liquid surface to obtain the semiconductor substrate, wherein the thin film layer is silicon nitride and / or silicon oxide. The method is simple to operate and easy to control, so that the manufacturing cost is reduced, and the stability and the component uniformity of the semiconductor substrate structure are improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to a method for manufacturing a semiconductor substrate. Background Art

[0002] With the rapid progress of semiconductor technology, the requirements for semiconductor manufacturing and processing are getting higher and higher. Semiconductor substrates contain multiple electronic components and are widely used. Most semiconductor substrates can be formed into plate-shaped thin films using chemical vapor deposition. There are also technologies that use high-temperature heat treatment to manufacture semiconductor substrates. However, these methods have some problems, such as difficult temperature control, high energy consumption, high cost, and unstable substrate material structure, which are difficult to meet the needs of the modern electronics industry for high-quality, low-cost semiconductor devices.

[0003] Therefore, it is urgent to provide an improved method for manufacturing a semiconductor substrate to overcome the above defects. Summary of the invention

[0004] The object of the present invention is to provide an improved method for manufacturing a semiconductor substrate, which is simple to operate and easy to control, thereby reducing manufacturing costs and improving the stability of the semiconductor substrate structure and the uniformity of its composition.

[0005] To achieve the above object, the method for manufacturing a semiconductor substrate of the present invention comprises the following steps:

[0006] Providing a semiconductor substrate base material, the semiconductor substrate base material comprising a silicon-containing material;

[0007] In a vacuum environment, irradiating the surface of the semiconductor substrate base material to melt the surface to form a liquid surface; and

[0008] A thin film layer is deposited on the liquid surface to obtain a semiconductor substrate, wherein the thin film layer is silicon nitride and / or silicon oxide.

[0009] Compared with the prior art, the present invention irradiates the surface of the semiconductor substrate base material under a vacuum environment, so that the surface melts to form a liquid surface, and then forms a thin film layer of silicon nitride and / or silicon oxide on the liquid surface, thereby obtaining a semiconductor substrate. Operating under a vacuum environment can make the irradiation operation simpler and is conducive to the subsequent deposition of a thin film layer, so that the thin film layer is combined with the liquid surface, and finally forms a strong bond after solidification. The present invention first combines the thin film layer with the liquid surface in liquid form, so that the composition of the manufactured semiconductor substrate is more uniform, the thickness is more controllable, and the semiconductor substrate finally obtained is more stably combined, thereby improving the performance of the semiconductor substrate.

[0010] Preferably, the surface of the semiconductor substrate is irradiated by a laser beam or an electron beam.

[0011] Preferably, the irradiation energy of the laser beam or electron beam is 100mJ-500mJ.

[0012] Preferably, forming the thin film layer specifically comprises: forming the thin film layer on the liquid surface by chemical vapor deposition, and controlling the temperature of the liquid surface and the thin film layer to form a bond between the thin film layer and the liquid surface.

[0013] Preferably, the temperature is 1100°C to 1200°C.

[0014] Preferably, the air pressure of the vacuum environment is 1.0×10 -2 Pa to 2.0×10 -2 Pa.

[0015] Preferably, after depositing the thin film layer, the method further comprises solidifying the liquid surface. DETAILED DESCRIPTION

[0016] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with some embodiments. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0017] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like to indicate orientations or positional relationships are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0018] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0019] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0020] In the present application, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being “above”, “above”, and “above” a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0021] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are for illustrative purposes only and are not intended to be the only implementation method.

[0022] The method for manufacturing a semiconductor substrate of the present invention is further described below in conjunction with an embodiment, but the present invention is not limited thereby. The method of the present invention is intended to provide an improved method for manufacturing a semiconductor substrate, which is simple to operate and easy to control, thereby reducing manufacturing costs and improving the stability of the semiconductor substrate structure and the uniformity of the composition.

[0023] In one embodiment of the method for manufacturing a semiconductor substrate of the present invention, the following steps are included:

[0024] Providing a semiconductor substrate base material, the semiconductor substrate base material comprising a silicon-containing material;

[0025] In a vacuum environment, irradiating the surface of the semiconductor substrate base material to melt the surface to form a liquid surface; and

[0026] A thin film layer is deposited on the liquid surface to obtain a semiconductor substrate, wherein the thin film layer is silicon nitride and / or silicon oxide.

[0027] The present invention irradiates the surface of a semiconductor substrate base material under a vacuum environment, so that the surface melts to form a liquid surface, and then forms a thin film layer of silicon nitride and / or silicon oxide on the liquid surface, thereby obtaining a semiconductor substrate. Operating under a vacuum environment can make the irradiation operation simpler and is conducive to the subsequent deposition of a thin film layer, so that the thin film layer is combined with the liquid surface, and finally forms a strong bond after solidification. The present invention first combines the thin film layer with the liquid surface in liquid form, so that the composition of the manufactured semiconductor substrate is more uniform, the thickness is more controllable, and the semiconductor substrate finally obtained is more stably combined, thereby improving the performance of the semiconductor substrate.

[0028] Specifically, the solid silicon substrate is placed in a vacuum environment, such as a vacuum chamber, and the pressure in the vacuum chamber is controlled to be 1.0×10 -2 Pa to 2.0×10 -2 Pa. It is understandable that the vacuum environment described in the present invention is not an ideal vacuum environment, but the air in the chamber is extracted by the exhaust device to form a certain negative pressure in the chamber.

[0029] In a vacuum chamber, the surface of a semiconductor substrate is irradiated to melt it and form a liquid surface. Optionally, the surface of the semiconductor substrate is irradiated by a laser beam or an electron beam, and the energy of the laser beam or the electron beam is controlled to be suitable for melting the surface of the substrate under a specific gas pressure. Preferably, the irradiation energy of the laser beam or the electron beam is 100mJ-500mJ, for example, 200mJ is particularly preferred. By performing energy irradiation in a vacuum chamber with a certain negative pressure, the energy of the laser beam or the electron beam is easy to control, and the energy consumption is reduced to a certain extent, that is, a molten surface can be obtained.

[0030] Next, a thin film layer is deposited on the liquid surface. Preferably, the thin film layer is deposited by chemical vapor deposition, and the thin film layer is silicon nitride and / or silicon oxide. At the same time, the temperature of the liquid surface is adjusted, for example, the temperature is controlled to be 1100°C to 1200°C, so that the thin film layer and the liquid surface can be in uniform contact, and the thickness of the thin film layer is adjusted, thereby adjusting the final thickness of the semiconductor substrate. More preferably, after the thin film layer is deposited, the liquid surface is solidified, and after the contact surface is solidified, a strong bond is formed between the thin film layer and the substrate surface, which is beneficial to improve the structural stability. It can be seen that the semiconductor substrate obtained in this way has a more stable bond and better performance.

[0031] It can be seen that the semiconductor substrate manufacturing method proposed by the present invention can manufacture a semiconductor substrate with high quality, uniform composition and controllable thickness. The method can be applied to the manufacture of various silicon substrates and can meet the manufacturing requirements of different semiconductor devices, and can effectively improve the performance and reliability of semiconductor devices, and has broad application prospects.

[0032] The above disclosure is only a preferred embodiment of the present invention, which certainly cannot be used to limit the scope of rights of the present invention. Therefore, equivalent changes made according to the scope of the patent application of the present invention are still within the scope covered by the present invention.

Claims

1. A method for manufacturing a semiconductor substrate, characterized in that: The following steps are involved: Providing a semiconductor substrate base material, the semiconductor substrate base material comprising a silicon-containing material; In a vacuum environment, irradiating the surface of the semiconductor substrate base material to melt the surface to form a liquid surface; as well as A thin film layer is deposited on the liquid surface to obtain a semiconductor substrate, wherein the thin film layer is silicon nitride and / or silicon oxide.

2. The method for manufacturing a semiconductor substrate according to claim 1, wherein: The surface of the semiconductor substrate base material is irradiated with a laser beam or an electron beam.

3. The method for manufacturing a semiconductor substrate according to claim 2, wherein: The irradiation energy of the laser beam or electron beam is 100mJ-500mJ.

4. The method for manufacturing a semiconductor substrate according to claim 1, wherein: Forming the thin film layer specifically includes: forming the thin film layer on the liquid surface by chemical vapor deposition, and controlling the temperature of the liquid surface and the thin film layer to form a bond between the thin film layer and the liquid surface.

5. The method for manufacturing a semiconductor substrate according to claim 4, wherein: The temperature is 1100°C to 1200°C.

6. The method for manufacturing a semiconductor substrate according to claim 1, wherein: The pressure of the vacuum environment is 1.0×10 -2 Pa to 2.0×10 -2 Pa.

7. The method for manufacturing a semiconductor substrate according to claim 1, wherein: After depositing the thin film layer, the liquid surface is solidified.