Semiconductor process method and semiconductor process equipment

Abstract

The invention discloses a semiconductor process method and semiconductor process equipment, and relates to the field of semiconductors. The invention discloses a semiconductor process method, which is used for carrying out process treatment on a wafer in a process cavity through process liquid medicine. The semiconductor process method comprises the following steps: preparing a process liquid medicine with the concentration being a first concentration and the temperature being a first temperature; increasing the pressure in the process cavity from normal pressure to preset pressure, and increasing the temperature of the process liquid medicine from the first temperature to a second temperature; and performing process treatment on the wafer in the process cavity through the pressurized and heated process liquid medicine. The method at least can solve the problems that the temperature and the water content of the phosphoric acid liquid cannot be balanced, so that the process efficiency is low or slice skipping and slice breaking phenomena occur.

Description

Technical Field

[0001] The present application belongs to the field of semiconductors, and specifically relates to a semiconductor process method and semiconductor process equipment. Background Art

[0002] In the semiconductor manufacturing process, hot phosphoric acid is widely used to remove silicon nitride (Si3N4) hard masks. This is because phosphoric acid has a good etching selectivity ratio between silicon nitride and silicon dioxide (SiO2). In the STI process, it can remove Si3N4 well while retaining SiO2 without affecting the subsequent processes. Therefore, phosphoric acid wet etching machines still play an irreplaceable and important role in some advanced processes.

[0003] The reaction equation of phosphoric acid and silicon nitride is: It can be seen from the reaction equation that the main substance involved in the silicon nitride etching reaction is water, and phosphoric acid is used as a catalyst. Therefore, the etching rate of silicon nitride is mainly related to the temperature of the phosphoric acid solution and the water content in the phosphoric acid solution; among them, the higher the water content in the phosphoric acid solution, the lower the boiling point, and the more difficult it is to maintain a high reaction temperature; similarly, the higher the temperature, the faster the water evaporates, and the lower the water content in the phosphoric acid solution, which will also reduce the reaction rate.

[0004] In actual production, the temperature of phosphoric acid solution is generally controlled at a temperature below the boiling point for the process. For example, the temperature of 89% phosphoric acid solution is stabilized at about 165°C. This process has the following two problems: ① The phosphoric acid etching rate (Etch rate) is about 58A / min, and the process time is 40-50min, which seriously reduces the process efficiency of the machine; ② The stability of phosphoric acid solution is not easy to control at high temperature. In order to maintain the stability of the etching rate, it is necessary to continuously add water to the phosphoric acid solution. When the water content in the phosphoric acid solution increases, the boiling point of the phosphoric acid solution decreases. However, if the set temperature of the heater remains unchanged, the phosphoric acid solution will be in a boiling state, which will cause the wafer to jump or break under the action of the boiling phosphoric acid solution, which is easy to cause safety problems. Summary of the invention

[0005] The purpose of the embodiments of the present application is to provide a semiconductor process method and semiconductor process equipment, which can at least solve the problems of unbalanced temperature and water content of phosphoric acid solution, resulting in low process efficiency or chip skipping and chip breakage.

[0006] In order to solve the above technical problems, this application is implemented as follows:

[0007] The embodiment of the present application provides a semiconductor process method for performing process treatment on a wafer in a process chamber by using a process liquid;

[0008] The semiconductor process method comprises:

[0009] preparing a process liquid having a first concentration and a first temperature;

[0010] Increasing the pressure in the process chamber from normal pressure to a preset pressure, and raising the process liquid from the first temperature to a second temperature;

[0011] The wafer in the process chamber is processed by pressurized and heated process liquid.

[0012] The present application also provides a semiconductor process equipment, including:

[0013] A process chamber, used to provide a sealed process environment;

[0014] A carrying device, disposed in the process chamber and used for carrying the wafer;

[0015] A pressure regulating device, used to regulate the pressure in the process chamber so as to increase the pressure from normal pressure to a preset pressure;

[0016] The temperature regulating device is used to regulate the temperature of the process liquid of the first concentration and the first temperature under the preset pressure state in the process chamber, so that the process liquid is increased from the first temperature to the second temperature.

[0017] The embodiments of the present application allow wafers to be processed in a process solution with high temperature, high pressure and high water content. Compared with the process conditions in the related art, the high pressure environment can increase the boiling point of the process solution, thereby allowing the wafers to be processed in a process solution with higher temperature and lower concentration. The etching rate under these process conditions is higher, the process time is shortened, and the machine running efficiency is improved. At the same time, the high water content makes the temperature of the process solution lower than the boiling point, so that the process solution will not be at the critical point of boiling, thereby making the state of the process solution more stable and the process safer. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 A schematic diagram of the structure of a semiconductor process equipment disclosed in an embodiment of the present application;

[0019] Figure 2 A first perspective view of a first latching tooth and a second latching tooth in a process chamber disclosed in an embodiment of the present application;

[0020] Figure 3 A second perspective view of the first latching tooth and the second latching tooth in the process chamber disclosed in the embodiment of the present application;

[0021] Figure 4 This is a flow chart of the semiconductor process method disclosed in an embodiment of the present application.

[0022] Description of reference numerals:

[0023] 100-process chamber; 110-first side wall; 120-second side wall; 130-bottom wall; 140-liquid outlet; 150-liquid return outlet;

[0024] 200-carrying device; 210-first latching tooth; 220-second latching tooth; 230-third latching tooth; 240-first gap; 250-second gap; 260-third gap;

[0025] 300-temperature regulating device; 310-heating element; 320-temperature detecting element;

[0026] 400-pressure regulating device; 410-intake pipeline; 420-exhaust pipeline; 430-intake control valve; 440-exhaust control valve; 450-boosting pump; 460-pressure detection element;

[0027] 510-liquid return pipeline; 520-liquid return pump; 530-filter element;

[0028] 610-concentration detection element; 620-water injection pump. DETAILED DESCRIPTION

[0029] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0030] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0031] The embodiments of the present application are described in detail below through specific embodiments and their application scenarios in conjunction with the accompanying drawings.

[0032] refer to Figures 1 to 4 The embodiment of the present application discloses a semiconductor process method for processing a wafer in a process chamber 100 by using a process liquid. The disclosed semiconductor process method includes:

[0033] preparing a process liquid having a first concentration and a first temperature;

[0034] The pressure in the process chamber 100 is increased from normal pressure to a preset pressure, and the process liquid is increased from a first temperature to a second temperature;

[0035] The wafers in the process chamber 100 are processed by the pressurized and heated process liquid.

[0036] Specifically, the concentration of the process liquid in the process chamber 100 may be a first concentration, and the water content in the process liquid of this concentration is relatively high, that is, the first concentration is relatively low.

[0037] Considering that under normal pressure, the lower the concentration of the process liquid (i.e., the higher the water content), the lower its boiling point, and the temperature of the process liquid is the first temperature, which is lower than the process temperature, the process liquid needs to be heated to facilitate the process. However, since the concentration of the process liquid of the first concentration is relatively small, it is easy to cause the process liquid to boil during the heating process, which may cause wafer jumping, breaking, etc., and even easily cause safety problems.

[0038] Based on the above situation, before heating the process liquid of the first concentration, the process chamber 100 is pressurized to increase the pressure in the process chamber 100 from normal pressure to a preset pressure. Due to the increase in pressure, the boiling point of the process liquid in the process chamber 100 will increase compared to the normal pressure state. In this case, the process liquid is heated to increase its temperature to the second temperature. Due to the increase in the boiling point of the process liquid under the high pressure state, even if the temperature of the process liquid is increased to the second temperature, it will not cause the process liquid to boil, so that there will be no wafer jump or breakage, which ensures the integrity of the wafer and avoids safety problems. Therefore, the pressurized and heated process liquid can be used to process the wafer in the process chamber 100, which can effectively alleviate the boiling of the process liquid.

[0039] It can be seen that the embodiments of the present application allow the wafer to be processed in a high-temperature, high-pressure, and high-water content process liquid. Compared with the process conditions in the related art, the high-pressure environment can increase the boiling point of the process liquid, so that the wafer can be processed in a higher temperature and lower concentration process liquid. The etching rate under this process condition is higher, the process time is shortened, and the machine running efficiency is improved. At the same time, the high water content makes the temperature of the process liquid lower than the boiling point, so that the process liquid will not be at the critical point of boiling, thereby making the state of the process liquid more stable and the process safer.

[0040] For example, the water content in the process liquid of the first concentration may be 15% to 18%. Of course, it may also be other water contents, which are not specifically limited here. The first temperature is the normal pressure process temperature T1, which may be about 140°C, which is lower than the high pressure process temperature T2; the second temperature is the high pressure process temperature T2, which may be about 180°C.

[0041] Optionally, preparing a process liquid having a first concentration and a first temperature includes:

[0042] Injecting a process solution of a second concentration into the process chamber 100, wherein the second concentration is greater than the first concentration;

[0043] Heating the process liquid from room temperature to a first temperature;

[0044] The process liquid is diluted from the second concentration to the first concentration to obtain a process liquid with the first concentration and the first temperature.

[0045] Specifically, a process liquid of normal temperature, normal pressure and second concentration is injected into the process chamber 100, and the heating element 310 is turned on to heat the process liquid to the normal pressure process temperature T1. This process temperature is lower than the high pressure process temperature. This is to prevent the process liquid temperature from being too high and causing boiling under normal pressure.

[0046] When the temperature reaches the normal pressure process temperature T1, a concentration detector is used to monitor the concentration of the process liquid, and water is added to the process chamber 100 until the set process concentration is reached. At this time, the water content in the process liquid is between 15% and 18%. In this process, under the first temperature state, although the boiling point of the process liquid diluted with water is reduced, it is not enough to make the process liquid boil at the first temperature. Therefore, it can be ensured that the process liquid will not boil at a high water content.

[0047] It should be noted that the concentration of the process liquid affects its boiling point, wherein a high concentration (i.e., low water content) results in a high boiling point, and a low concentration (i.e., high water content) results in a low boiling point. Therefore, in order to prevent the water content in the process liquid from increasing from 11% to 15% to 18% and causing the process liquid to boil, the embodiment of the present application dilutes the process liquid at a first temperature lower than the process temperature to prevent the high temperature from causing the diluted process liquid to boil.

[0048] Illustratively, the second concentration is relatively high, and the water content in the process liquid of this concentration may be about 11%.

[0049] Optionally, during the process of processing the wafer, the concentration of the process liquid is monitored, and when the concentration of the process liquid reaches an upper limit concentration, the water injection frequency and / or the single water injection volume is increased. Of course, an alarm can also be thrown to serve as a warning.

[0050] Considering that water in the process liquid is the main reaction substance, the water content in the process liquid gradually decreases and the concentration gradually increases during the process. However, the reduction of water content in the process liquid will reduce the reaction rate in the process, thereby affecting the process efficiency of the machine.

[0051] Based on the above situation, when the concentration of the process liquid reaches the upper limit concentration, an alarm is thrown to remind the staff to pay attention. At the same time, the water injection frequency can be automatically increased, or the single water injection volume can be automatically increased, or the water injection frequency and the single water injection volume can be increased at the same time, so that the concentration of the process liquid can be reduced through the direction of water injection, so that it returns to the normal concentration range, which is beneficial to increase the reaction rate and improve the process efficiency of the machine. Of course, when the concentration of the process liquid returns to the normal concentration range, the water injection can be stopped to prevent the concentration of the process liquid from being too low, which will cause its boiling point to decrease, making it easy to boil and cause wafer jumping and chip breakage.

[0052] Optionally, during the process of processing the wafer, the pressure in the process chamber 100 is monitored;

[0053] When the pressure in the process chamber 100 reaches the upper limit pressure, the process chamber 100 is depressurized; of course, an alarm may also be thrown to serve as a warning;

[0054] When the pressure in the process chamber 100 reaches the lower limit pressure, the process chamber 100 is pressurized; of course, an alarm may also be thrown out to serve as a warning.

[0055] Based on the above steps, the pressure in the process chamber 100 can be ensured to be within the normal process pressure range during the process. On the one hand, it can prevent safety problems caused by excessive pressure, and on the other hand, it can prevent boiling of the process liquid caused by too low pressure. Therefore, it is necessary to ensure the stability of the pressure in the process chamber 100 by means of pressure relief or pressure increase.

[0056] In the embodiment of the present application, the upper limit pressure is greater than the preset pressure, and the lower limit pressure is greater than the normal pressure and less than the preset pressure. It should be noted here that the preset pressure is the set pressure in the process.

[0057] Optionally, after the step of performing a process on the wafer, the semiconductor process method further comprises:

[0058] Depressurizing the process chamber 100 to restore the pressure in the process chamber 100 to normal pressure;

[0059] The process liquid is lowered from the second temperature to the first temperature.

[0060] It should be noted that the process liquid can be kept at the first temperature when no process is performed, and the water content in the process liquid is 15% to 18%, and the pressure in the process chamber 100 is normal pressure, so as to prepare for the next process.

[0061] Optionally, the pressure is increased from normal pressure to a preset pressure, including:

[0062] An inert gas is introduced into the process chamber 100 to increase the pressure in the process chamber 100 from normal pressure to a preset pressure.

[0063] The inert gas may be nitrogen, helium, etc. In addition, a booster pump 450 may be used to pressurize the inert gas and then pass it into the process chamber 100 , thereby increasing the pressure in the process chamber 100 .

[0064] In the embodiment of the present application, taking the process liquid as phosphoric acid solution as an example, the specific process of the semiconductor process method is as follows:

[0065] After triggering the phosphoric acid replacement condition, firstly, the inner tank, outer tank and liquid return line 510 of the process chamber 100 are emptied, and then new acid is injected into the inner tank of the process chamber 100, overflowing into the outer tank of the process chamber 100, and the process liquid level of the process liquid is ensured, and the liquid return pump 520 is turned on to continue to inject liquid into the outer tank to ensure the process liquid level;

[0066] At this time, the process chamber 100 is full of new acid with a water content of about 11%. The heating element 310 in the temperature regulating device 300 is turned on to heat the process liquid to the normal pressure process temperature T1 (about 140°C). This process temperature is lower than the high pressure process temperature. This is to prevent the process liquid from boiling due to excessive temperature under normal pressure. After the temperature reaches T1, the concentration of the process liquid is monitored and water is added to the set process concentration. At this time, the water content is between 15% and 18%. This step is to ensure that the process liquid does not boil at a high water content.

[0067] After the temperature and concentration reach the set values, the wafer enters the process chamber 100, and the pressure value in the process chamber 100 is increased by the booster pump 450 in the pressure regulating device 400. At the same time, the power of the heating element 310 is increased to raise the temperature of the process solution to the high-pressure process temperature T2 (about 180°C); if the process conditions (such as set pressure, set temperature, etc.) are still not reached within the set time, the machine throws an alarm, which is manually handled, and the process starts after the set conditions are reached.

[0068] It should be noted here that the concentration of the process liquid has a certain influence on its boiling point. Specifically, under normal pressure, the boiling point of the process liquid is high when the concentration is high (i.e., the water content is low), and the boiling point is low when the concentration is low (i.e., the water content is high). Therefore, under normal pressure and process temperature T1, in order to avoid directly adding water to the process liquid with a water content of about 11% to make the water content reach 15% to 18%, and to avoid boiling the process liquid due to the decrease in concentration when the temperature of the process liquid is increased to the process temperature T2, the embodiment of the present application pressurizes the process chamber 100 before increasing the temperature of the process liquid to T2. Under the action of high pressure, the boiling point of the process liquid will increase, thereby effectively alleviating the problem of boiling of the process liquid with a lower concentration when the temperature is increased to the process temperature.

[0069] In addition, the pressure in the process chamber 100, the temperature and concentration of the process liquid are monitored in real time during the process. If the pressure in the process chamber 100 is too high, it can be relieved through the pressure relief valve, and if the pressure is too low, it can be boosted by the booster pump 450 to ensure the stability of the pressure during the process. The temperature stability of the process liquid is achieved by controlling the power of the heating element 310, and the concentration of the process liquid is achieved by real-time feedback of the concentration through the concentration meter, and the water replenishment frequency and / or the single water replenishment amount is controlled.

[0070] After the process is completed, the pressure relief valve is opened, the pressure in the process chamber 100 is restored to normal pressure, the power of the heating element 310 is reduced, the temperature of the process liquid is reduced to T1, the chamber cover of the process chamber 100 is opened, the robot takes away the wafer, and the next process is carried out. When no process is carried out, the process liquid maintains a temperature of T1, the water content in the process liquid is between 15% and 18% of the process set water content, and the pressure in the process chamber 100 is at normal pressure.

[0071] Therefore, through the above-mentioned semiconductor process method, it can be ensured that the process liquid is in a high temperature, high pressure, and high water content state during the process, thereby improving the process rate, shortening the process time, and ensuring that the process liquid is not in a boiling state, thereby reducing process risks.

[0072] refer to Figure 4 A specific implementation step of the semiconductor process method in the embodiment of the present application is:

[0073] Step 401, triggering a liquid replacement condition;

[0074] Step 402, drain the original process liquid and fill it with new process liquid to a specified liquid level;

[0075] Step 403, the process liquid circulation is started, and the heating element 310 starts heating;

[0076] Step 404, determine whether the process liquid temperature reaches the normal pressure process temperature T1, if yes, execute step 405, if no, execute step 406;

[0077] Step 405, determine whether the concentration of the process liquid reaches the set concentration, if yes, execute step 407, if no, execute step 408;

[0078] Step 406, the heating element 310 continues heating;

[0079] Step 407 , the wafer enters the process chamber 100 ;

[0080] Step 408, triggering a water replenishment action;

[0081] Step 409, performed after step 407, closing the process chamber 100 and pressurizing the process chamber 100;

[0082] Step 410, performed after step 407, the power of the heating element 310 is increased to increase the temperature of the process liquid;

[0083] Step 411, executed after step 409, determines whether the pressure in the process chamber 100 reaches a set value, if not, executes step 412;

[0084] Step 412: The booster pump 450 increases power and increases pressure;

[0085] Step 413, executed after step 410, determines whether the temperature reaches the positive pressure process temperature T2, if not, executes step 414;

[0086] Step 414, the heating element 310 is temperature-controlled to a temperature T2 using PID;

[0087] Step 415: If step 411 is yes and step 413 is yes, then execute step 416;

[0088] Step 416, start the process;

[0089] Step 417, determine whether the temperature, pressure, and concentration are all within the set range, if so, execute step 418, if not, execute step 419;

[0090] Step 418, after the process is completed, the pressure in the process chamber 100 is released to return to normal pressure, the power of the heating element 310 is reduced, and the temperature of the process liquid drops to T1;

[0091] Step 419: Throw out an alarm and handle it manually;

[0092] Step 420, performed after step 418, opens the chamber cover of the process chamber 100 so that the wafer is taken away by the robot;

[0093] Step 421, maintaining the temperature and concentration within the set range, and waiting for the next batch of wafer processing.

[0094] The embodiment of the present application further discloses a semiconductor process equipment. By applying the above semiconductor process method, the disclosed semiconductor process equipment includes:

[0095] The process chamber 100 is used to provide a sealed process environment;

[0096] The carrying device 200 is disposed in the process chamber 100 and is used to carry the wafer;

[0097] The pressure regulating device 400 is used to regulate the pressure in the process chamber 100 so as to increase the pressure from normal pressure to a preset pressure;

[0098] The temperature regulating device 300 is used to regulate the temperature of the process liquid of the first concentration and the first temperature under the preset pressure state in the process chamber 100, so as to increase the temperature of the process liquid from the first temperature to the second temperature.

[0099] Based on the above arrangement, the pressure in the process chamber 100 can be increased by the pressure regulating device 400, so that the boiling point of the process liquid in the process chamber 100 can be increased accordingly. On this basis, even if the process liquid is raised from the first temperature to the second temperature by the temperature regulating device 300, the process liquid will not boil, thereby effectively alleviating the problem of wafer jumping and wafer breakage caused by the boiling of the process liquid, thereby ensuring the quality of the product and the safety of the process.

[0100] In some embodiments, the carrier 200 may include a plurality of first latch teeth 210, a second latch tooth 220 and a third latch tooth 230. To achieve fixed installation of the carrier 200, the process chamber 100 may have a first side wall 110 and a second side wall 120 that are relatively arranged, as well as a bottom wall 130, wherein the plurality of first latch teeth 210 are arranged on the first side wall 110 along a first direction, the plurality of second latch teeth 220 are arranged on the second side wall 120 along the first direction, and the plurality of third latch teeth 230 are arranged on the bottom wall 130 along the first direction. Thus, the plurality of first latch teeth 210, the plurality of second latch teeth 220 and the plurality of third latch teeth 230 can be fixed, thereby ensuring their respective firmness and stability.

[0101] To achieve the limitation and support of the wafer, there is a first gap 240 between two adjacent first teeth 210, a second gap 250 between two adjacent second teeth 220, and a third gap 260 between two adjacent third teeth 230. The first gap 240, the second gap 250 and the third gap 260 are aligned and respectively used to accommodate the edges of the wafer.

[0102] Based on the above arrangement, a plurality of third latch teeth 230 can support a plurality of wafers, and the third gap 260 can limit the position of the wafers during processing in a vertical state in the process chamber 100, and the stability of the wafers during the process can be ensured to prevent the wafers from moving randomly during the process. In addition, the carrier 200 is completely located within the process chamber 100 and does not need to extend outside the process chamber 100, thereby ensuring the overall sealing of the process chamber 100.

[0103] The first latches 210 and the second latches 220 can restrain both sides of the wafer to prevent the wafer from tipping over in the process chamber 100 , and can further ensure that the wafer is processed in a vertical state in the process chamber 100 .

[0104] In some embodiments, the pressure regulating device 400 may include an air inlet pipeline 410, an air outlet pipeline 420, an air inlet control valve 430, an air outlet control valve 440, a boost pump 450 and a pressure detection element 460, wherein the air inlet pipeline 410 and the air outlet pipeline 420 are both connected to the process chamber 100, the air inlet control valve 430 and the boost pump 450 are both arranged on the air inlet pipeline 410, the air outlet control valve 440 is arranged on the air outlet pipeline 420, and the pressure detection element 460 is arranged in the process chamber 100, and is electrically connected to the boost pump 450, the air inlet control valve 430 and the air outlet control valve 440 respectively.

[0105] Based on the above settings, when the pressure of the process chamber 100 needs to be increased, the boost pump 450 and the air intake control valve 430 are opened respectively. At this time, under the action of the boost pump 450, gas will continuously enter the process chamber 100 to increase the pressure in the process chamber 100. At the same time, the pressure detection element 460 detects the pressure in the process chamber 100 in real time; when the pressure detection element 460 detects that the pressure in the process chamber 100 reaches a certain level and meets the process requirements (that is, reaches the preset pressure), it sends signals to the boost pump 450 and the air intake control valve 430 respectively, and controls the boost pump 450 and the air intake control valve 430 to be closed respectively. At this time, ventilation to the process chamber 100 is stopped, and the process chamber 100 is sealed to facilitate the process processing of the wafer under high temperature, high pressure and high water content conditions.

[0106] When the pressure detection element 460 detects that the pressure in the process chamber 100 is too high and reaches the upper limit pressure, the gas outlet control valve 440 is controlled to open to relieve the pressure in the process chamber 100 and prevent the excessive pressure in the process chamber 100 from causing safety hazards.

[0107] In addition, the pressure detection element 460 is also electrically connected to the alarm. When the pressure in the process chamber 100 is too high and reaches the upper limit pressure or too low and reaches the lower limit pressure, the pressure detection element 460 sends a control signal to the alarm to sound the alarm to serve as a reminder to the staff.

[0108] In some embodiments, the temperature regulating device 300 may include a heating element 310. In addition, the process chamber 100 may also include a liquid outlet 140 and a liquid return port 150. The liquid outlet 140 and the liquid return port 150 are connected by a liquid return pipeline 510, and the liquid return pipeline 510 is provided with a liquid return pump 520. In addition, the heating element 310 is also provided in the liquid return pipeline 510.

[0109] Based on the above settings, when the process liquid needs to be heated, the heating element 310 and the liquid return pump 520 are turned on. Under the action of the liquid return pump 520, the process liquid flows out from the liquid outlet 140 and flows back to the liquid return port 150 through the liquid return pipeline 510, and passes through the heating element 310 during the reflux process, so as to heat the process liquid through the heating element 310.

[0110] In addition, the temperature regulating device 300 may also include a temperature detecting element 320, which is disposed in the process chamber 100 and is electrically connected to the heating element 310. In this way, the temperature of the process liquid can be detected in real time by the temperature detecting element 320, and a control signal can be sent to the heating element 310 to facilitate the control of changing the heating power of the heating element 310.

[0111] Of course, in order to ensure the cleanliness of the process liquid, the return liquid pipeline 510 can also be provided with a filter element 530. When the process liquid refluxes through the return liquid pipeline 510, it is filtered through the filter element 530, so that impurities in the process liquid can be filtered out to prevent the impurities in the process liquid from flowing back into the process chamber 100 again and causing damage to the wafer.

[0112] In order to realize automatic control of the concentration of the process liquid, the semiconductor process equipment may further include a water injection pump 620 and a concentration detection element 610, wherein the water injection pump 620 is connected to the process chamber 100 through a water injection pipeline, and the concentration detection element 610 is arranged in the process chamber 100 and electrically connected to the water injection pump 620. Based on this, the concentration of the process liquid can be detected in real time by the concentration detection element 610, and when the concentration of the process liquid reaches the upper limit concentration during the process, an alarm is thrown, and a control signal is sent to the water injection pump 620 to control the water injection pump 620 to change the power and / or the water injection frequency, thereby increasing the water injection frequency and / or the single water injection amount, so as to realize automatic adjustment of the concentration. Of course, when the concentration is reduced to the lower limit concentration, automatic control can also be realized.

[0113] In some embodiments, the process chamber 100 may include a tank body and a tank cover, and the tank cover is rotatably connected to the opening of the tank body to facilitate opening or closing, so as to facilitate placing or removing wafers. To ensure sealing, the process chamber 100 may also include a locking cylinder, which is arranged in the tank body and is used to lock the tank cover to prevent accidents caused by accidental opening of the tank cover during the process.

[0114] Exemplarily, the material of the tank body may be quartz, and the wall thickness may be increased from 3 mm to 6-8 mm to improve the strength of the tank body so that the tank body can withstand high pressure.

[0115] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A semiconductor process method for processing a wafer in a process chamber (100) using a process liquid, characterized in that: The semiconductor process method comprises: preparing a process liquid having a first concentration and a first temperature; Increasing the pressure in the process chamber (100) from normal pressure to a preset pressure, and raising the process liquid from the first temperature to a second temperature; The wafer in the process chamber (100) is subjected to process treatment by means of pressurized and heated process liquid.

2. The semiconductor process method according to claim 1, characterized in that: The step of preparing a process liquid having a first concentration and a first temperature comprises: Injecting the process liquid of a second concentration into the process chamber (100), wherein the second concentration is greater than the first concentration; Heating the process liquid from room temperature to the first temperature; The process liquid is diluted from the second concentration to the first concentration to obtain the process liquid at the first concentration and the first temperature.

3. The semiconductor process method according to claim 1, characterized in that: The semiconductor process method further includes: During the process of processing the wafer, the concentration of the process solution is monitored; When the concentration of the process liquid reaches the upper limit concentration, the water injection frequency and / or the single water injection volume is increased.

4. The semiconductor process method according to claim 1, characterized in that: The semiconductor process method further includes: During the process of processing the wafer, the pressure in the process chamber (100) is monitored; When the pressure in the process chamber (100) reaches an upper limit pressure, the process chamber (100) is depressurized, wherein the upper limit pressure is greater than the preset pressure; When the pressure in the process chamber (100) reaches a lower limit pressure, the process chamber (100) is pressurized, wherein the lower limit pressure is greater than normal pressure and less than the preset pressure.

5. The semiconductor process method according to claim 1, characterized in that: After the step of performing process treatment on the wafer, the semiconductor process method further comprises: Relieving the pressure of the process chamber (100) so that the pressure in the process chamber (100) returns to normal pressure; The process liquid is cooled from the second temperature to the first temperature.

6. The semiconductor process method according to claim 1, characterized in that: The pressure is increased from normal pressure to a preset pressure, including: An inert gas is introduced into the process chamber (100) to increase the pressure in the process chamber (100) from normal pressure to a preset pressure.

7. A semiconductor process equipment, characterized in that: include: A process chamber (100), used to provide a sealed process environment; A carrying device (200), disposed in the process chamber (100) and used for carrying a wafer; A pressure regulating device (400) is used to regulate the pressure in the process chamber (100) so as to increase the pressure from normal pressure to a preset pressure; The temperature regulating device (300) is used to regulate the temperature of a process liquid of a first concentration and a first temperature under a preset pressure state in the process chamber (100), so as to increase the temperature of the process liquid from the first temperature to a second temperature.

8. The semiconductor process equipment according to claim 7, characterized in that: The process chamber (100) comprises a first side wall (110) and a second side wall (120) which are arranged opposite to each other, and a bottom wall (130); The carrying device (200) comprises a plurality of first latch teeth (210), a plurality of second latch teeth (220) and a plurality of third latch teeth (230); A plurality of the first latch teeth (210) are arranged on the first side wall (110) along a first direction, and a first gap (240) is provided between two adjacent first latch teeth (210); A plurality of the second latch teeth (220) are arranged on the second side wall (120) along a first direction, and a second gap (250) is provided between two adjacent second latch teeth (220); A plurality of the third latching teeth (230) are arranged on the bottom wall (130) along the first direction, and a third gap (260) is provided between two adjacent third latching teeth (230); The first gap (240), the second gap (250) and the third gap (260) are aligned and arranged to accommodate the edges of the wafer respectively.

9. The semiconductor process equipment according to claim 7, characterized in that: The pressure regulating device (400) comprises an air intake pipeline (410), an air outlet pipeline (420), an air intake control valve (430), an air outlet control valve (440), a booster pump (450) and a pressure detection element (460); The air inlet pipeline (410) and the air outlet pipeline (420) are both in communication with the process chamber (100), the air inlet control valve (430) and the booster pump (450) are both arranged on the air inlet pipeline (410), and the air outlet control valve (440) is arranged on the air outlet pipeline (420); The pressure detection element (460) is disposed in the process chamber (100) and is electrically connected to the booster pump (450), the air inlet control valve (430) and the air outlet control valve (440) respectively.

10. The semiconductor process equipment according to claim 7, characterized in that: The temperature adjustment device (300) comprises a heating element (310) and a temperature detection element (320); The process chamber (100) comprises a liquid outlet (140) and a liquid return port (150), the liquid outlet (140) and the liquid return port (150) are connected via a liquid return pipeline (510), and the liquid return pipeline (510) is provided with a liquid return pump (520); The heating element (310) is disposed in the liquid return pipeline (510) and is electrically connected to the temperature detection element (320); the temperature detection element (320) is disposed in the process chamber (100).

11. The semiconductor process equipment according to claim 7, characterized in that: The semiconductor process equipment further comprises a water injection pump (620) and a concentration detection element (610); The water injection pump (620) is connected to the process chamber (100) via a water injection pipeline, and the concentration detection element (610) is arranged in the process chamber (100) and is electrically connected to the water injection pump (620).

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