Power module having circuit carrier and power module bridge having plurality of power modules

Abstract

The invention relates to a power module, comprising a first circuit carrier, further comprising a first conductor structure, which has an outer contact region, at least one second conductor structure, which has an outer contact region, and a further third conductor structure, which has a plurality of semiconductor structure elements, the second conductor structure has at least one outer contact region, the third conductor structure has an outer contact region, and the plurality of semiconductor structure elements are arranged individually or in groups. The power module is associated with a multifunctional frame in which a T + bridge, a T-bridge and a phase bridge are accommodated in a spatially decoupled manner from the power module. Furthermore, the invention relates to a power module bridge having a plurality of power modules, which are accommodated on a cooling surface.

Description

Technical Field

[0001] The invention relates to a power module having a circuit carrier, a first conductor structure, at least one second conductor structure and a further third conductor structure, a plurality of semiconductor components, the circuit carrier comprising a carrier substrate, the first conductor structure having an external contact region, the second conductor structure having at least one external contact region, the third conductor structure having an external contact region, the plurality of semiconductor components being arranged individually or in groups. The invention also relates to a power module bridge having a plurality of power modules, the power modules being accommodated on a common cooling surface. Background Art

[0002] In the prior art, power modules are additionally molded, which are installed, for example, in a power module bridge. During molding, the power modules are embedded in a solid protective housing, which consists, for example, of plastic (molding mass). The molding mass serves to encase and protect the interior of the power module. However, this encasement of the power module by the molding mass is not particularly resistant to cracks.

[0003] A power module is known from DE 11 2017 004 390 T5, which has the following features: an insulating substrate having a front side, on which a power semiconductor element is fastened; a base plate, which is connected to the back side of the insulating substrate; a housing, which is fastened to the base plate and surrounds the insulating substrate; a cover, which is fastened to the housing and forms a sealed area; and a silicone gel, which serves as a filling element, which fills the entire sealed area and has an internal stress, which serves as a compressive stress.

[0004] DE 10 2014 219 998 B4 discloses a power module, which is used in particular for providing a phase current for an electric motor. The power module comprises a circuit carrier having a surface, at least two first contact surfaces on the surface, and at least two first power transistors, each of which has a ground contact surface. A corresponding first power transistor of the at least two first power transistors is directly arranged on a corresponding first contact surface of the first contact surfaces, and is directly connected to the corresponding first contact surface in an electrically conductive manner via the ground contact surface of the first power transistor. In addition, the power module comprises a second contact surface on the surface and at least two second power transistors, each of which has a ground contact surface. At least two second power transistors are directly arranged on the second contact surface, and are directly connected to the second contact surface in an electrically conductive manner via the corresponding ground contact surface of the second power transistor. In addition, the power module comprises at least two third contact surfaces on the surface, wherein the at least two second power transistors each have a further contact surface on the side of the second power transistor facing away from the surface of the circuit carrier, and the respective second power transistor of the at least two second power transistors is connected to the respective third contact surface of the at least two third contact surfaces in an electrically conductive manner via the further contact surface of the second power transistor. The at least two first contact surfaces and the at least two third contact surfaces are arranged in a longitudinal direction of the power module. The at least two first power transistors are arranged in an alternating manner one after the other on the circuit carrier, and the second contact surface is arranged next to the at least two first contact surfaces and the at least two third contact surfaces, wherein the second contact surface has at least two contact areas, wherein a corresponding contact area of ​​the at least two contact areas is located next to a corresponding first power transistor of the at least two first power transistors. The at least two first power transistors each have an additional contact surface on the side of the surface of the first power transistor facing away from the circuit carrier, and the corresponding first power transistor of the at least two first power transistors is connected to a corresponding contact area of ​​the at least two contact areas of the second contact surface in an electrically conductive manner via the additional contact surface of the first power transistor, and the corresponding contact area is located next to the corresponding first power transistor. Here, the at least two contact areas of the second contact surface and the at least two second power transistors are arranged alternately one after the other in the longitudinal direction.

[0005] EP 2 418 925 B1 discloses an electrical contact between a flexible foil having at least one conductor track and at least one electrical contact of a sensor device or a control device. In this case, an end section of the flexible foil is electrically contacted at a contact point by heat input, wherein the end section of the flexible foil is mounted at the contact point on an electrical contact that is designed in a protruding manner. The end section of the flexible foil is designed as a wave-like impact portion, in particular as a deflection portion. Summary of the invention

[0006] According to the invention, a power module is provided, which has a first circuit carrier, a first conductor structure, at least one second conductor structure and a further third conductor structure, wherein the first circuit carrier comprises a carrier substrate, the first conductor structure has an external contact region, the second conductor structure has at least one external contact region, and the third conductor structure has an external contact region, wherein a plurality of semiconductor components arranged individually or in groups are provided. The power module is assigned a multifunctional frame, in which a T+ bridge, a T- bridge and a phase bridge are accommodated in a manner spatially decoupled from the power module.

[0007] By associating the multifunctional frame with the power module as proposed according to the invention, the current-conducting components can be arranged spatially and decoupled outside of the expensive and limited surface of the power module and in particular be thermally decoupled.

[0008] In an advantageous embodiment of the power module proposed according to the invention, the multifunctional frame can be arranged above, below or to the side of the power module, as viewed in the Z direction. The aforementioned embodiment variants allow customer requirements to be taken into account with regard to the available installation space.

[0009] In an advantageous embodiment of the power module proposed according to the invention, the T+ bridge and the T- bridge are accommodated in a horizontal arrangement in the multifunctional frame, wherein the distance between the T+ bridge and the T- bridge is minimized.

[0010] Alternatively, there is the possibility of implementing the power module in such a way that the T+ bridge and the T- bridge are accommodated in the multifunctional frame in a vertical arrangement and the distance between the T+ bridge and the T- bridge is minimized. Finally, in another embodiment variant, there is the option of designing the power module proposed according to the invention in such a way that the T+ bridge and the T- bridge are accommodated next to each other in the multifunctional frame and the distance between the T+ bridge and the T- bridge is minimized.

[0011] By means of the above-mentioned embodiment variant, it can be achieved in an advantageous manner that, by minimizing the distance between the T+ bridge and the T- bridge, the magnetic fields occurring in the current-carrying T+ bridge or T- bridge cancel each other out, so that a low-inductance design can be achieved. The low-inductance design can in turn achieve short switching times, which greatly contributes to the switching characteristics of the power module proposed according to the present invention.

[0012] In an advantageous development of the power module proposed according to the invention, an insulating layer is arranged between the T+ bridge and the T- bridge in the multifunctional frame, which insulating layer is in particular implemented as insulating paper or insulating cardboard. As a result, the distance between the T+ bridge and the T- bridge can be minimized significantly.

[0013] Advantageously, in the power module proposed according to the invention, it is provided that the T+ bridge and the T- bridge can be contacted via press-in pins. Press-in pins are a proven technology that ensures robust electrical contacting over the service life.

[0014] In an advantageous embodiment of the power module proposed according to the invention, it is provided that, in the state in which the power module is connected to the multifunctional frame, the T+ bridge, the T- bridge and the phase bridge are arranged in a first plane, which extends above or below a second plane, in which the power module is accommodated, which has semiconductor components arranged individually or in groups on the bottom surface of the power module. In particular, the arrangement of the planes mentioned enables the thermal decoupling and the movement of the current-carrying components into the multifunctional frame in which the T+ bridge, the T- bridge and the phase bridge are arranged.

[0015] Furthermore, the power module proposed according to the invention is distinguished in that the multifunctional frame assigned to the power module in the Z direction is surrounded by a cover made of plastic material or by a molding mass. The cover made of plastic material or the molding mass is an effective protection against the effects of environmental influences. Furthermore, in the power module proposed according to the invention, it is provided that the T+ bridge and / or the T- bridge are provided with an integrated contact surface.

[0016] In the power module proposed according to the invention, it is provided that the external contact region is moved relative to the power module into a multifunctional frame assigned to the power module in a manner displaced in the Z direction. The movement of the external contact region from the power module into the multifunctional frame also contributes to improved utilization of the surface of the circuit carrier or chip surface.

[0017] In the power module proposed according to the invention, a multifunctional frame assigned to the power module is provided with a plurality of press-in pins, a selected number of which are accessible for signal tapping.

[0018] In addition, the invention relates to a power module bridge having a plurality of power modules, wherein the power modules are accommodated on a cooling surface and the power module bridge is placed in a lateral arrangement next to a battery system and is electrically connected to the battery system via a connecting device. Alternatively, there is the possibility of placing the plurality of power modules accommodated on the cooling surface and the power module bridge comprising the plurality of power modules above or below the battery system and electrically connecting the power module bridge to the battery system via a corresponding connecting device.

[0019] Advantages of the present invention

[0020] The solution proposed according to the present invention is outstanding in that the surface equipped with semiconductor elements (whether individually or in groups), especially the bottom surface of the power module, can be better utilized, because the surface of the path for guiding the current is moved outward to another plane of the multifunctional frame in other cases. In the Z direction, the multifunctional frame assigned to the power module can be arranged not only above the power module, but also below the power module. In addition, there is the following possibility: the multifunctional frame is also arranged next to the power module, also in a way that is spatially decoupled and thermally decoupled from the power module. Another advantage of the solution proposed according to the present invention is that the path for guiding the current in the form of a T+ bridge and a T- bridge is arranged horizontally, vertically or side by side in the multifunctional frame. If the spacing between the T+ bridge and the T- bridge is minimized, the magnetic fields that appear in the T+ bridge or the T- bridge due to the flow of current cancel each other. This in turn leads to the realization of a low-inductance connection. The low-inductance connection is extremely advantageous in terms of short switching time and significantly improves the performance of the power module proposed according to the present invention, which has a multifunctional frame assigned to the power module. In addition, the complexity of the power module can be reduced by the solution proposed according to the present invention. If the semiconductor components contained in the power module are arranged on the bottom surface of the power module individually or in groups, extremely favorable cooling can be achieved via the cooling surface and the heat removal of the semiconductor components can be achieved in this regard. The cooling surface can be connected to the bottom side of the power module by means of a flat sintering connection or by means of a welding connection / adhesive connection. A short distance is thus generated, and the waste heat generated when the semiconductor components are running can be dissipated via the short distance and transported away by a cooling medium. A standardized interface for signal transmission in the form of a press-in pin can be realized. The use of press-in pins or press-in pins is a common and robust possibility for realizing electrical connection with components encapsulated by injection molding. If the power module equipped and electrically contacted or the multifunctional frame assigned to the power module is provided with a covering or molding quality composed of a plastic material, the power module can be advantageously protected from environmental influences and temperature influences and harmful substances. The press-in pins protruding above the cover always enable electrical contacting of the assembly consisting of the power module and the multifunctional frame assigned to the power module, regardless of whether the multifunctional frame is arranged above, below or to the side of the power module. Depending on which requirements are made or which electrical loads need to be controlled, the power module proposed according to the invention can include 12, 8 or 4 semiconductor components, wherein the semiconductor components can be MOSFETs, transistors, IGBTs, diodes and the like. In addition, by using the press-in pins, standardized electrical contacting can be achieved for the power contacts.With regard to the contacting of the power module proposed according to the invention with press-in pins assigned to the power module, the implementation of a materially bonded connection, for example by welding, is superfluous. Press-in pins enable effective and robust electrical contacting. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Embodiments of the present invention are explained in more detail with reference to the drawings and the following description.

[0022] The accompanying drawings show:

[0023] Figure 1 A plan view showing a possible arrangement of a first circuit carrier including a carrier substrate and semiconductor components of a power module,

[0024] Figure 2 A plan view of a power module is shown, which has a cooling surface and a layout surface separated from one another, which has a region for the lateral arrangement of press-in pins,

[0025] Figure 3 shows an assembly consisting of a power module accommodated on a cooling surface and a multifunctional frame arranged above the power module in the Z direction,

[0026] Figure 4 A multifunctional frame is shown, which engages with the power module in the assembly direction,

[0027] Figure 5 A perspective view of an assembly consisting of a multifunctional frame and a power module, which is provided with a plastic injection molding,

[0028] Figure 6 An exploded schematic diagram showing the components of the multifunctional frame,

[0029] Figure 7 shows a perspective view of a multifunctional frame with a T+ bridge and a T- bridge arranged therein,

[0030] Figure 8 Shows the horizontal arrangement of T+ bridge and T- bridge,

[0031] Figure 8.1 , 8.2 Schematic diagram showing a possible arrangement of T+ bridges and T- bridges in a vertical arrangement,

[0032] Fig. 9 shows a top view of a power module bridge having power modules which are arranged next to one another on a cooling surface,

[0033] Fig.10 Show Fig. 9The arrangement of a power module bridge next to a battery system is shown in FIG. DETAILED DESCRIPTION

[0034] In the following description of embodiments of the invention, identical or similar elements are denoted by the same reference numerals, wherein a repeated description of these elements is omitted in individual cases. The figures merely schematically illustrate the subject matter of the invention.

[0035] Figure 1 A plan view of a power module 12 is shown, in particular a plan view of a first circuit carrier 14 of the power module.

[0036] From the basis Figure 1 It can be seen from the top view of the power module 12 that the carrier substrate 40 of the first circuit carrier 14 is provided with a plurality of conductor structures 18, 20A, 20B, 22. The first circuit carrier 14 extends in the X,Y plane 10, wherein the first circuit carrier 14 is provided with an electrically insulating layer 16. The first conductor structures 18 are located on the electrically insulating layer in a manner separated from each other by channel-shaped interruptions, and the first conductor structures have an external contact area 18.2. In addition, second conductor structures 20A, 20B are located on the first circuit carrier 14 in a manner symmetrical to each other with respect to the central longitudinal axis 24 of the power module 12. Each of the two second conductor structures 20A, 20B comprises an external contact area 20A.2, 20B.2. Finally, a third conductor structure 22 is applied to the first circuit carrier 14 or to the electrically insulating layer 16 of the first circuit carrier, and the third conductor structure has at least one external contact area 22.2.

[0037] The conductor structures 18, 20A, 20B, 22 mentioned are electrically separated from one another and are applied to the first circuit carrier 14 in a substantially symmetrical manner with respect to the central longitudinal axis 24. The active surface is indicated by the position 36, and the layout surface for conducting the current flowing around the active surface is indicated by the reference numeral 38. For example, AMB (Active Metal Brazing) can be selected as the carrier substrate 40 of the first circuit carrier 14, which AMB contains OFC (oxygen-free copper) / Si3N4 / OFC.

[0038] From the basis Figure 2 A top view of the power module 12 can be seen in the schematic diagram of FIG. 1 , wherein semiconductor components are arranged on the active surface 36 , such as transistors, MOSFETs or other semiconductor components that can be used as semiconductor switches. Figure 2It can be seen that on the one hand, a first group 64 of semiconductor components 42 are accommodated on the active surface 36. The individual semiconductor components 42 can be designed as MOSFETs, for example, and have control attachment terminals 34 on their outer sides, via which control attachment terminals, not shown in more detail, can be implemented for the individual semiconductor components 42 of the first group 64 of semiconductor components 42. Analogously to the first group 64, a second group 66 of semiconductor components 42 is arranged, which can also be MOSFETs, and control attachment terminals 34 are respectively constructed on the outer regions of the second group of semiconductor components. The semiconductor components 42 of the second group 66 of semiconductor components 42 can be controlled from the outside via the control attachment terminals 34, but this is not shown in detail according to Figure 2 Not shown in more detail in the schematic diagram of FIG.

[0039] In addition, according to Figure 2 It can be seen from the top view that Figure 2 In the X,Y plane 10 shown, on the longitudinal side of the first circuit carrier 14 in the form of a carrier substrate 40, there are regions in which the press-in pins 76-94 project to the longitudinal side according to the embodiment of the present invention. Figure 2 In particular, this relates to the first and second press-in pins 76, 78 as well as the third and fourth press-in pins 80, 82 as well as the fifth and sixth press-in pins 84, 86 arranged opposite one another. In the region of the opposite end faces of the first circuit carrier 14, the seventh and eighth press-in pins 88, 90 as well as the ninth and tenth press-in pins 92, 94 are arranged. Figure 3 and Figure 4 The spatial arrangement of the press-in pins 76 , 78 , 80 , 82 , 84 , 86 , 88 , 90 , 92 , 94 can be seen in more detail in the schematic diagram of .

[0040] From the basis Figure 3 It can be seen from the side view that the power module 12 shown here from the outside is accommodated with its bottom side 120 on the cooling surface 106. When viewed in the Z direction 54, the multifunctional frame 50 is located above the power module 12. Figure 3 On the upper side of the multifunctional frame 50 shown from the side in FIG. 1 , individual press-in pins 76, 78, 80, 82, 84, 86, 88, 90, 92, 94—here in the drawing plane—protrude upward in the vertical direction. Electrical contact can be made in a robust and simple manner via these press-in pins in the multifunctional frame 50 or in a power module 12 arranged below it.

[0041] from Figure 4 It can be concluded that Figure 3The multifunctional frame 50, which is similarly constructed, is placed on the power module 12 in the assembly direction 130. The multifunctional frame 50 forms a first plane 60, while the power module 12, in particular the base 144 of the power module, forms a second plane 62. Figure 4 As can be seen in the schematic diagram, Figure 1 The external contact areas 18.2, 20A.2, 20B.2 and Figure 4 The external contact region 22.2 (not shown) can be moved from the power module 12, ie from the second plane 62, into the first plane 60. Figure 4 The multifunctional frame 50 of the schematic diagram has the following features: Figure 3 The schematics have different numbers of press-in pins 76-94.

[0042] From the basis Figure 5 It can be seen from the perspective top view that the external contact area 18.2 and the external contact areas 20A.2, 20B.2 opposite to these external contact areas protrude laterally on the short end side of the multifunctional frame 50 or from the cover of the multifunctional frame, so that these external contact areas can be connected to other electrical components, for example, by means of material-locked connecting electrical contacts. Figure 5 The perspective top view of FIG. 1 shows that the multifunctional frame 50 comprises a cover made of plastic material 132, by which components arranged in the multifunctional frame 50, in particular current-carrying components arranged there, are protected from the outside. In order to be able to make contact with components arranged in the multifunctional frame 50 or in the power module 12 located below the multifunctional frame, in particular semiconductor components 42 and components arranged in the multifunctional frame, press-in pins protrude above the upper side of the cover of the multifunctional frame 50, in order to be able to make contact with components arranged in the multifunctional frame 50 or in the power module 12 located below the multifunctional frame, in particular semiconductor components 42 and components arranged in the multifunctional frame. Figure 5 Only some of the press-in pins are shown in FIG. 1 , the cover being made of plastic material 132 .

[0043] From the basis Figure 6 An exploded schematic diagram of the multifunctional frame 50 and the components enclosed by the multifunctional frame can be seen in the schematic diagram of FIG. This involves the T+ bridge 134, the phase bridge 136 and the T-bridge 138. These can also be referred to as the first current-conducting contact surface 68 or the second current-conducting contact surface 70.

[0044] In addition, according to Figure 6 It can be seen from the exploded schematic diagram that the phase bridge 136 can be electrically contacted laterally via the seventh press-in pin 88 and the tenth press-in pin 94, shown here as an example. Via the other press-in pins assigned to the phase bridge 136, namely the ninth and tenth press-in pins 92 and 94, the phase bridge 136 can be electrically contacted laterally. Figure 6The semiconductor components 42 which are not shown in the exploded illustration of FIG. 1 , but which are arranged on the base 144 of the power module 12 , are contacted.

[0045] In addition, according to Figure 6 The schematic diagram of FIG. 1 shows that the T+ bridge 134 and the T- bridge 138 are arranged one above the other. An insulating layer 140 made of paper or cardboard is arranged between the T+ bridge and the T- bridge. The T+ bridge 134 can be electrically contacted via a contact strip 142 (see also according to FIG. 1 ). Figure 7 ). The insulating layer 140 between the T+ bridge 134 and the T- bridge 138 separates the bridges from each other in the vertical direction. Figure 8 The smaller the distance 146 between the T+ bridge 134 and the T-bridge 138 can be set, the greater the degree of mutual cancellation of the magnetic fields extending in the T+ bridge 134 or the T-bridge 138 can be achieved.

[0046] From the basis Figure 7 In the perspective view of FIG. 5 , a first plane 60 can be obtained, which is given by the insert in the multifunctional frame 50. Figure 6 , the phase bridge 136 can be contacted via the seventh press-in pin 88 and the eighth press-in pin 90. The semiconductor components 42 arranged in the power module 12 can be electrically contacted or actuated via the further press-in pins 92, 94 shown here, which pass through the multifunctional frame 50 in the vertical direction. Figure 7 The right part of the perspective top view of FIG. 1 shows the T+ bridge 134 (the first contact surface 68 for conducting current), according to Figure 6 In the exploded schematic diagram of FIG. 1 , the T-bridge 138 is located below the T+ bridge.

[0047] From the basis Figure 8 It can be seen from the side view that Figure 8 In the multifunctional frame 50, not shown, viewed in the vertical direction, the T+ bridge 134 and the T- bridge 138 extend in a horizontal arrangement 150 with a small spacing 146. The smaller the spacing 146 between the T+ bridge 134 and the T- bridge 138 can be selected, the more advantageous the resulting low-inductance connection. The small spacing 146 between the components T+ bridge 134 and the T- bridge 138 arranged in the horizontal arrangement 150 can advantageously achieve that the magnetic fields generated in the T+ bridge 134 or the T- bridge 138 cancel each other out during operation. This ensures a low-inductance connection that allows very short switching times for electronic components in the form of MOSFETs, IGBTs, diodes, etc. In addition, from the Figure 8 A contact strip 142 can be seen in the side view of FIG. 1 , which extends partially parallel to the phase bridge 136 .

[0048] from Figure 8.1 and 8.2 It can be concluded that the alternative basis Figure 8 With the schematic diagram of the horizontal arrangement 150 shown there, the T+ bridge 134 and the T-bridge 138 can also be designed in a vertical arrangement 148. Advantageously, the distance 146 between the T+ bridge 134 and the T-bridge 138 can also be minimized in the installed state with the vertical arrangement 148. The smaller the distance 146 between the T+ bridge 134 and the T-bridge 138 can be kept, also with the vertical arrangement 148, the greater the mutual cancellation of the magnetic fields extending in the current-carrying components T+ bridge 134 or T-bridge 138 that can be achieved. Figure 8 Similarly, this also enables a low-inductance connection, which enables short switching times of the semiconductor components 42. Similarly, the same applies to the horizontal arrangement 150 according to Figure 8.2 Schematic diagram of .

[0049] Therefore, from Figure 8 , Figure 8.1 and Figure 8.2 It can be seen that the arrangement of the T+ bridge 134 and the T- bridge 138 within the functional framework 50 can achieve a low-inductance connection, which can achieve short switching times for electronic semiconductor components 42 in the form of MOSFET, IGBT, diode or the like, which are arranged in the second plane 62, preferably on the bottom 144 of the power module 12.

[0050] From the basis Fig. 9 The top view of FIG. 1 shows a power module bridge 156 . The power module bridge has a plurality of power modules 12 , which have a multifunctional frame 50 arranged above the power modules. Fig. 9 It is shown that in this embodiment variant of the power module bridge 156, three power modules 12 are arranged side by side on a cooling surface 158. The external contact areas 18.2, 20A.2, 20B.2 or 22.2 protruding on the short end faces of the multifunctional frame are used to make contact with the power modules 12 covered by the multifunctional frame 50. The power modules 12 are accommodated on the cooling surface 158 for heat dissipation of the power modules, through which a coolant flows, which dissipates the heat generated there during operation of the power modules 12.

[0051] from Fig.10 can be obtained Fig. 9 1 shows a possible arrangement of a power module bridge 156 relative to a battery system 162 .

[0052] Fig.10 It is shown that according to Fig.10In the schematic diagram of FIG. 1 , the power module bridge 156 is arranged in a lateral arrangement 164 relative to the battery system 162. The battery system 162 includes a plurality of battery cells 160 arranged in a manner similar to that of FIG. Fig.10 , only part of the battery cells are shown. The lateral arrangement 164 is characterized in that, in this embodiment variant of the connection of the power module bridge 156, it is arranged laterally relative to the power module bridge 156 via the connection device 168. In addition, as can be seen from the Fig.10 As can be seen from the schematic diagram of FIG. 1 , the functional frame 50 and the press-in pins protrude upward in the vertical direction above the upper side of the cover composed of plastic material 132. The press-in pins, which are not shown in more detail here, are used to make electrical contacts or signal taps of the power module 12. In addition, according to FIG. Fig.10 As can be seen from the schematic diagram of FIG. 1 , the cooling surface 158 of the power module bridge 156 includes at least one power connection end 166 for supplying a cooling medium. By incorporating the cooling surface 158 into a continuous cooling circuit, it is possible to ensure that the heat generated during operation of the semiconductor components 42 of the power module 12 is continuously removed. Fig.10 It can be seen from the schematic diagram that the external contact area 18.2 moved from the plane of the power module 12 (see the second plane 62) into the first plane 60, that is, into the multifunctional frame 50, can be electrically contacted from the side. In contrast, the press-in pins protruding above the upper side of the multifunctional frame 50 can be electrically contacted from the upper side of the power module bridge 156. Fig.10 In the lateral arrangement 164 shown in FIG. 1 , the power module bridge 156 can also be electrically contacted on the upper side of the battery system 162 or on the lower side of the battery system. In this case, the embodiment of the connecting device 168 can be different embodiments and be constructed accordingly when viewed in the Z direction 54 depending on the connection plane.

[0053] The invention is not limited to the embodiments described herein and the aspects emphasized therein. On the contrary, numerous modifications within the scope of a person skilled in the art can be realized within the scope given by the claims.

Claims

1. A power module (12), comprising a first circuit carrier (14), a first conductor structure (18), at least one second conductor structure (20A, 20B) and a further third conductor structure (22), and a plurality of semiconductor components (42), the first circuit carrier comprising a carrier substrate (40), the first conductor structure having an external contact region (18.2), the second conductor structure having at least one external contact region (20A.2, 20B.2), the third conductor structure having an external contact region (22.2), the plurality of semiconductor components being arranged individually or in groups (64, 66), characterized in that: The power module (12) is assigned a multifunctional frame (50), in which a T+ bridge (134), a T-bridge (138) and a phase bridge (136) are accommodated in a manner spatially decoupled from the power module (12).

2. The power module (12) according to claim 1, characterized in that Viewed in the Z direction (54), the multifunctional frame (50) is arranged above or below the power module (12).

3. The power module (12) according to claim 1 and 2, characterized in that The T+ bridge (134) and the T- bridge (138) are received in the multi-function frame (50) in a horizontal arrangement (150), and the spacing (146) between the T+ bridge and the T- bridge is minimized.

4. The power module (12) according to claim 1 and 2, characterized in that The T+ bridge (134) and the T- bridge (138) are received in the multi-function frame (50) in a vertical arrangement (148), and the spacing (146) between the T+ bridge and the T- bridge is minimized.

5. The power module (12) according to claim 1 and 2, characterized in that The T+ bridge (134) and the T-bridge (138) are accommodated in the multifunctional frame (50) side by side with each other, and the spacing (146) between the T+ bridge and the T-bridge is minimized.

6. The power module (12) according to claims 1 to 5, characterized in that An insulating layer (140), in particular insulating paper or insulating cardboard, is arranged in the multifunctional frame (50) between the T+ bridge (134) and the T-bridge (138).

7. The power module (12) according to claims 1 to 6, characterized in that The T+ bridge (134) can be contacted via press-in pins (88, 90).

8. The power module (12) according to claims 1 to 6, characterized in that The T-bridge (138) can be contacted via press-in pins (78).

9. The power module (12) according to claims 1 to 8, characterized in that When the power module (12) is in a state of being coupled to the multifunctional frame (50), the T+ bridge (134), the T- bridge (138) and the phase bridge (136) are arranged in a first plane (60), the first plane being located above or below a second plane (62), in which the power module (12) is accommodated, the power module having semiconductor components (42) arranged individually or in groups (64, 66) on a bottom surface (144).

10. The power module (12) according to claims 1 to 9, characterized in that A multifunctional frame (50) associated with the power module (12) in the Z direction (54) is surrounded by a cover or a molding mass made of a plastic material (132).

11. The power module (12) according to claims 1 to 10, characterized in that The T+ bridge (134) and / or the T- bridge (138) are configured with an integrated contact surface.

12. The power module (12) according to claims 1 to 11, characterized in that The external contact region (18.2, 20A.2, 20B.2, 22.2) is moved relative to the power module (12) in a manner displaced in the Z direction (54) into a multifunctional frame (50) assigned to the power module.

13. The power module (12) according to claims 1 to 12, characterized in that A multifunctional frame (50) associated with the power module (12) is provided with a plurality of press-in pins (76-94), selected press-in pins (88) of the press-in pins being used for signal tapping (154).

14. A power module bridge (156) comprising a plurality of power modules (12) according to any one of claims 1 to 13, characterized in that: The power modules (12) are accommodated on a cooling surface (158), and the power module bridge (156) is placed in a lateral arrangement (164) next to a battery system (162) and is connected to the battery system via a connecting device (168).

15. A power module bridge (156) comprising a plurality of power modules (12) according to any one of claims 1 to 13, characterized in that: The power module (12) is accommodated on a cooling surface (158), and the power module bridge (156) is placed above or below a battery system (162) and is connected to the battery system via a connecting device (168).

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