Power module and method for manufacturing a power module

Abstract

The invention relates to a power module having a first circuit carrier and a first conductor structure, at least one second conductor structure and a further third conductor structure, having a first group of semiconductor structure elements and a second group of semiconductor structure elements, the first circuit carrier comprising a carrier substrate, the first conductor structure has an outer contact region, the second conductor structure has at least one outer contact region, and the third conductor structure includes an outer contact region. The invention relates to a power module having a multi-functional frame, in which groups of semiconductor structural elements are arranged in a first plane, which is spatially separated from a second plane in the multi-functional frame, in which second plane a contact surface is accommodated, which contacts the groups of semiconductor structural elements. The invention also relates to a method for producing a power module.

Description

Technical Field

[0001] The invention relates to a power module having a first circuit carrier and a first conductor structure, at least one second conductor structure and a further third conductor structure, and further having a first group of semiconductor components and a second group of semiconductor components, the first circuit carrier being formed by a carrier substrate, the first conductor structure having an external contact region, the second conductor structure having at least one external contact region, and the third conductor structure having an external contact region. The invention also relates to a method for producing a power module. Background Art

[0002] In the prior art, power modules are additionally molded, which are installed, for example, in a power module bridge. During molding, the power modules are embedded in a solid protective housing, which consists, for example, of plastic (molding mass). The molding mass serves to encase and protect the interior of the power module. However, this encasement of the power module by the molding mass is not particularly resistant to cracks.

[0003] A power module is known from DE 11 2017 004 390 T5, which has the following features: an insulating substrate having a front side, on which a power semiconductor element is fastened; a base plate, which is connected to the back side of the insulating substrate; a housing, which is fastened to the base plate and surrounds the insulating substrate; a cover, which is fastened to the housing and forms a sealed area; and a silicone gel, which serves as a filling element, which fills the entire sealed area and has an internal stress, which serves as a compressive stress.

[0004] DE 10 2014 219 998 B4 discloses a power module, which is used in particular for providing a phase current of an electric motor. The power module comprises a circuit carrier having a surface, at least two first contact surfaces on the surface, and at least two first power transistors, each of which has a ground contact surface. A corresponding first power transistor of the at least two first power transistors is directly arranged on a corresponding first contact surface of the first contact surfaces, and is directly connected to the corresponding first contact surface in an electrically conductive manner via the ground contact surface of the first power transistor. In addition, the power module comprises a second contact surface on the surface and at least two second power transistors, each of which has a ground contact surface. At least two second power transistors are directly arranged on the second contact surface, and are directly connected to the second contact surface in an electrically conductive manner via the corresponding ground contact surface of the second power transistor. In addition, the power module comprises at least two third contact surfaces on the surface, wherein the at least two second power transistors each have a further contact surface on the side of the second power transistor facing away from the surface of the circuit carrier, and the respective second power transistor of the at least two second power transistors is connected to the respective third contact surface of the at least two third contact surfaces in an electrically conductive manner via the further contact surface of the second power transistor. At least two first contact surfaces and at least two third contact surfaces are arranged successively in an alternating manner in the longitudinal direction of the power module, and the second contact surface is arranged next to the at least two first contact surfaces and the at least two third contact surfaces, wherein the second contact surface has at least two contact areas, wherein the respective contact area of ​​the at least two contact areas is located next to the respective first power transistor of the at least two first power transistors. At least two first power transistors each have a further contact surface on the side of the first power transistor facing away from the surface of the circuit carrier, and the respective first power transistor of the at least two first power transistors is connected to the respective contact area of ​​the at least two contact areas of the second contact surface in an electrically conductive manner via the further contact surface of the first power transistor, and the respective contact area is located next to the respective first power transistor. In this case, at least two contact regions of the second contact area and at least two second power transistors are arranged alternately one behind the other in the longitudinal direction.

[0005] EP 2 418 925 B1 discloses an electrical contact between a flexible foil having at least one conductor track and at least one electrical contact of a sensor device or a control device. In this case, an end section of the flexible foil is electrically contacted at a contact point by heat input, wherein the end section of the flexible foil is mounted on a protruding electrical contact at the contact point. The end section of the flexible foil is designed as a wave-like impact portion, in particular as a deflection portion. Summary of the invention

[0006] According to the present invention, a power module is provided, which comprises a first circuit carrier, a first conductor structure, at least one second conductor structure and a further third conductor structure, a first group of semiconductor components and a second group of semiconductor components, wherein the first circuit carrier is formed by a carrier substrate, the first conductor structure has an external contact region, the second conductor structure has at least one external contact region, and the third conductor structure comprises an external contact region. The power module is equipped with a multifunctional frame, wherein the group of semiconductor components is arranged in a first plane, the first plane is spatially separated from a second plane in the multifunctional frame, and a contact surface is accommodated in the second plane, wherein the contact surface contacts the group of semiconductor components.

[0007] The solution proposed according to the invention makes it possible to achieve better cooling of the semiconductor components, since the current-carrying paths can be moved into the multifunctional frame and there can be designed either next to each other or one above the other, preferably in a low-inductance embodiment, whereby switching losses can be reduced.

[0008] In an advantageous configuration of the power module according to the present invention, the multifunctional frame is either accommodated above or below the power module when viewed in the Z direction, thereby providing a higher degree of freedom in the layout of the power module.

[0009] In another advantageous embodiment variant of the power module proposed according to the invention, the current-conducting paths T+ bridge and T- bridge in the multifunctional frame are preferably designed with low inductance one above the other or next to one another.

[0010] In another advantageous embodiment variant of the power module according to the invention, the contact surfaces in the second plane can be contacted by means of press-in pins. In the present context, press-in pins are a particularly robust contact-making option and ensure a reliable electrical connection.

[0011] In a further advantageous embodiment of the power module according to the invention, the groups of semiconductor components arranged in the first plane can also be contacted via press-in pins.

[0012] The power module proposed according to the invention is also distinguished in that the power module is connected with its underside to the cooling surface either by a sintered connection or by a welded connection or an adhesive connection. By forming not only a sintered connection but also a flat, materially bonded connection in the form of a welded connection or an adhesive connection, very good heat transfer and thus heat removal from the semiconductor components of the power module can be achieved.

[0013] In another advantageous embodiment of the power module according to the invention, the contact surface arranged in the second plane of the multifunctional frame has an opening, which is located above the semiconductor components of the group of semiconductor components arranged in the first plane. This allows contacting to be achieved essentially in the vertical direction.

[0014] In the power module proposed according to the invention, the contact surfaces located in the second plane and the corresponding semiconductor components arranged in the first plane are electrically connected to one another, for example, via an L-shaped piece.

[0015] By means of this connection possibility extending essentially in the vertical direction, an electrically conductive connection can be achieved between the first plane and the second plane of the assembly consisting of the power module and the multifunctional frame.

[0016] In another advantageous embodiment of this embodiment variant, a spacer is arranged between the L-shaped part and the contact surface of the semiconductor component. By using the spacer, different structural heights, for example tolerances that occur, can be compensated in a simple manner. By using one or more spacers, the energy input can be reduced when welding the upper bonding partner to the contact surface of the semiconductor component, for example a MOSFET, a transistor, a GBDT or a diode, and melting can be effectively prevented.

[0017] In the power module proposed according to the invention, instead of using an L-shaped piece, it can be provided that a material connection is implemented between the multifunctional frame in the second plane and the semiconductor components of the group of semiconductor components arranged in the first plane. Preferably, the material connection is implemented in the opening of the multifunctional frame, for example as a welded connection on a joining partner, in particular a planar copper layer.

[0018] In addition, the present invention relates to a method for manufacturing a power module, in which method there is provided

[0019] a first conductor structure having a first contact region,

[0020] at least one second conductor structure, said second conductor structure having at least one external contact region,

[0021] a further third conductor structure having an external contact region,

[0022] in,

[0023] The power module is equipped with a multifunctional frame.

[0024] Arranging the group of semiconductor components in a first plane which is arranged spatially separated from a second plane in the multifunctional frame,

[0025] In this case, a contact surface is arranged in the second plane, which contact surface contacts the group of semiconductor components.

[0026] The solution proposed according to the invention allows a decoupling and spatial separation of the current-carrying surface and the semiconductor components which generate heat during operation, which can be MOSFETs, transistors or semiconductor switches or the like.

[0027] Advantages of the present invention

[0028] By the power module proposed according to the present invention or the embodiment of the power module according to the present invention, the active surface and the layout surface can be separated from each other. By the arrangement proposed according to the present invention of the multifunctional frame arranged above the power module, for example, the current guide is moved from the power module to the multifunctional frame arranged above the power module. Therefore, an improved cooling possibility for semiconductor structural elements is generated. The semiconductor structural element can be a transistor, a flip-flop, a MOSFET or the like. By the solution proposed according to the present invention, improved cooling can be achieved because a larger spacing between semiconductor structural elements can be achieved. By the solution proposed according to the present invention, the following possibility is generated: the path for guiding the current is moved to the multifunctional frame and implemented there in a low-inductance manner in a top-to-bottom manner or in a side-by-side manner, the path for guiding the current is, for example, a T+ bridge and / or a T- bridge. In particular, the possibility of implementing the path for guiding the current as a low-inductance current path reduces the switching losses that occur.

[0029] Due to the decoupling of the first and second planes in the power module and the multifunctional frame, a compact design of the power module proposed according to the invention is produced. In addition, the selected arrangement of the two functional planes one above the other, namely the first plane in which the semiconductor components are arranged and the second plane in which the current conduction takes place, can significantly improve production and also increase the service life of the power module since the complexity of the power module is significantly reduced.

[0030] In particular, a robust electrical contacting possibility of the aforementioned components is achieved when the contacting of the semiconductor components in the first plane and the current-carrying contact surfaces in the second plane, i.e. within the multifunctional frame, is formed by press-in pins. In addition, the embodiment of press-in pins is technically proven and can be robustly implemented in large-scale production.

[0031] Furthermore, according to the solution proposed in accordance with the invention, the underside of the power module and the top side of the cooling surface can advantageously be formed either by a planar sintered connection, by a planar soldered connection or by a planar adhesive connection. All embodiment variants offer the advantage of planar contacting, whereby the waste heat generated during operation of the semiconductor components of the power module can be reliably dissipated without thermal overloading of the power module proposed in accordance with the invention.

[0032] According to the solution proposed according to the present invention, the external contact area is moved from the power module in the vertical direction, that is, in the Z direction, and is arranged in the multifunctional frame. As a result, it is possible to achieve spatial decoupling of the semiconductor structure element from the current-guiding path or the external contact surface, so that the total surface available, that is, the chip surface, can be better fully utilized or significantly reduced, thereby significantly saving costs. If the T+ bridge and the T- bridge are implemented coplanarly and stacked on top of each other in a manner with a minimized spacing in the Z direction, the magnetic field generated by the current flow in these components is eliminated, so that the parasitic effects of the current can be largely excluded and a low-inductance connection can be achieved. By the solution proposed according to the present invention, the complexity of the entire structural unit of the power module and the multifunctional frame is significantly simplified. By the displacement of the multifunctional frame in the Z direction, whether above or below the power module, spatial decoupling can be achieved according to the requirements of the available structural space. By using press-in pins, standardized interfaces for signal transmission and line contact can be achieved. In addition, there is the possibility of arranging the semiconductor components in groups, for example, forming a group with six semiconductor components, or arranging the number of semiconductor components according to requirements and variants with 12, 8 or 4 semiconductor components while maintaining the corresponding spacing on the bottom surface of the power module. By means of the solution proposed according to the invention, very small tolerances for the subsequent attachment process and installation process can be maintained. In summary, the reliability of the power module and the multifunctional frame assigned to the power module can be significantly improved by significantly better heat removal, which is particularly beneficial to the service life of the power module. By inductive connection of the semiconductor components, very short switching times of the semiconductor components can be achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.

[0034] The accompanying drawings show:

[0035] Figure 1 shows a plan view of a first circuit carrier of a power module, which consists of a carrier substrate and one possible arrangement of semiconductor switches,

[0036] Figure 2 shows a plan view of a power module having a cooling surface and a layout surface separated from one another, which has a region for the lateral arrangement of press-in pins,

[0037] Figure 3 shows an assembly consisting of a power module accommodated on a cooling surface and a multifunctional frame arranged above the power module in the Z direction,

[0038] Figure 4 Show according to Figure 3 A perspective top view of the components of

[0039] Figure 5 An enlarged schematic diagram showing the contacting of the semiconductor components via the L-shaped piece and the connection of the power module to the cooling surface in the form of a sintered connection,

[0040] Figure 6 Show according to Figure 5 Schematic diagram of a power module and a cooling surface via a flat welding connection or an adhesive connection,

[0041] Figure 7 shows an alternative contact-making possibility for semiconductor components via a cohesive connection with an interposed copper layer,

[0042] Figure 8 A perspective view showing press-in pins protruding above the multifunctional frame and forming a standardized interface,

[0043] Fig. 9 An exploded schematic diagram showing the components of the multifunctional frame,

[0044] Fig.10 Show according to Figure 8 A schematic longitudinal section of a schematic diagram of a semiconductor component having an L-shaped piece for contacting the contact surfaces of the semiconductor components,

[0045] Fig.11 shows a top view of a power module bridge which is accommodated on a cooling surface of a cooling device,

[0046] Fig.12 A variant of the installation of the structural group is shown, which includes a Fig.11The power module bridge and the cooling device are housed on the upper side of the battery system. DETAILED DESCRIPTION

[0047] In the following description of embodiments of the invention, identical or similar elements are denoted by the same reference numerals, wherein a repeated description of these elements is omitted in individual cases. The figures merely schematically illustrate the subject matter of the invention.

[0048] Figure 1 A plan view of a power module 12 is shown, in particular a plan view of a first circuit carrier 14 of the power module.

[0049] according to Figure 1 The top view of the power module 12 shows that the carrier substrate 40 of the first circuit carrier 14 is provided with a plurality of conductor structures 18, 20A, 20B, 22. The first circuit carrier 14 extends in the X,Y plane 10, wherein the first circuit carrier 14 is provided with an electrically insulating layer 16. The first conductor structures 18 are located on the electrically insulating layer in a manner separated from each other by channel-shaped interruptions, and the first conductor structures have an external contact area 18.2. In addition, second conductor structures 20A, 20B are located on the first circuit carrier 14 in a manner symmetrical to each other with respect to the central longitudinal axis 24 of the power module 12. Each of the two second conductor structures 20A, 20B comprises an external contact area 20A.2, 20B.2. Finally, a third conductor structure 22 is applied to the first circuit carrier 14 or to the electrically insulating layer 16 of the first circuit carrier, and the third conductor structure has at least one external contact area 22.2.

[0050] The conductor structures 18, 20A, 20B, 22 mentioned are electrically separated from one another and are applied to the first circuit carrier 14 in a substantially symmetrical manner with respect to the central longitudinal axis 24. The active surface is denoted by the position 36, and the layout surface surrounding the active surface for conducting the current is denoted by the reference numeral 38. For example, AMB (Active Metal Brazing) can be selected as the carrier substrate 40 of the first circuit carrier 14, which AMB contains OFC (oxygen-free copper) / Si3N4 / OFC.

[0051] From the basis Figure 2 A top view of the power module 12 can be seen in the schematic diagram of FIG. 1 , wherein semiconductor components are arranged on the active surface 36 , such as transistors, MOSFETs or other semiconductor components that can be used as semiconductor switches. Figure 2It can be seen that on the one hand, a first group 64 of semiconductor components 42 are accommodated on the active surface 36. The individual semiconductor components 42 can be designed as MOSFETs, for example, and have control attachment terminals 34 on their outer sides, via which control attachment terminals, not shown in more detail, can be implemented for the individual semiconductor components 42 of the first group 64 of semiconductor components 42. Analogously to the first group 64, a second group 66 of semiconductor components 42 is arranged, which can also be MOSFETs, and control attachment terminals 34 are respectively constructed on the outer regions of the second group of semiconductor components. The semiconductor components 42 of the second group 66 of semiconductor components 42 can be controlled from the outside via the control attachment terminals 34, but this is not shown in detail according to Figure 2 Not shown in more detail in the schematic diagram of FIG.

[0052] In addition, according to Figure 2 It can be seen from the top view that Figure 2 In the X,Y plane 10 shown, on the longitudinal side of the first circuit carrier 14 in the form of a carrier substrate 40, there are regions in which the press-in pins 76-94 project to a position corresponding to the longitudinal direction of the first circuit carrier 14. Figure 2 In particular, this relates to the first and second press-in pins 76, 78 as well as the third and fourth press-in pins 80, 82 as well as the fifth and sixth press-in pins 84, 86 arranged opposite one another. In the region of the opposite end faces of the first circuit carrier 14, the seventh and eighth press-in pins 88, 90 as well as the ninth and tenth press-in pins 92, 94 are arranged. Figure 3 and Figure 4 The spatial arrangement of the press-in pins 76 , 78 , 80 , 82 , 84 , 86 , 88 , 90 , 92 , 94 can be seen in more detail in the schematic diagram of .

[0053] From the basis Figure 3 It can be seen from the side view that the power module 12 shown here from the outside is accommodated with its bottom side 120 on the cooling surface 106. When viewed in the Z direction 54, the multifunctional frame 50 is located above the power module 12. Figure 3 On the upper side of the multifunctional frame 50 shown from the side in FIG. 1 , individual press-in pins 76, 78, 80, 82, 84, 86, 88, 90, 92, 94—here in the drawing plane—protrude upward in the vertical direction. Electrical contact can be made in a robust and simple manner via these press-in pins in the multifunctional frame 50 or in a power module 12 arranged below it.

[0054] Figure 4 From the top, the Figure 3A partial perspective view of an assembly, shown from the side, consisting of the multifunctional frame 50 , the power module 12 and the cooling surface 106 arranged below the power module.

[0055] from Figure 4 It can be seen from FIG. 6 that a first group 64 of semiconductor components 42 and a second group 66 of semiconductor components 42 are arranged in a first plane 60 , which extends substantially on the bottom of the power module 12 . Figure 4 The layout pattern basically corresponds to Figure 2 The top view shown in . Figure 4 The schematic diagram of FIG. 7 shows that the substantially planar contact surfaces 68, 70 extend in a second plane 62, which extends above the first plane 60. Preferably, the contact surfaces 68, 70 are T+ bridges 134 or T- bridges 138 and phase bridges 136, which will be described in more detail below. The first contact surface 68 has a third press-in pin 80 and a fourth press-in pin 82 lying opposite the third press-in pin, while a seventh press-in pin 88 and an eighth press-in pin 90 arranged laterally offset to the seventh press-in pin are implemented on the second contact surface 70.

[0056] In addition, according to Figure 4 , it can be seen from the schematic diagram that the first group 64 and the second group 66 of semiconductor components 42 arranged in a plane below the second plane 62, that is, arranged in the first plane 60, can be contacted via press-in pins 84, 86, 92, 90. Figure 4 The arrangement shown in , or the spatial decoupling, allows a compact design and a significant improvement in the cooling of semiconductor components 42 which generate waste heat during operation.

[0057] in addition, Figure 4 As shown, the substantially flat contact surfaces 68, 70 are each configured to have a plurality of openings 72, which are arranged in accordance with Figure 4 In a variant embodiment, the contact surfaces 68, 70 of the embodiment have a rectangular shape 74. As an alternative to the rectangular shape 74, other geometric shapes are of course also conceivable in terms of the geometry of the opening 72, such as a square or a circle. Below the opening 72, which is respectively formed in the surface of the contact surfaces 68, 70, there is a semiconductor component 42, respectively. This means that the opening 72 located in the first plane 60 is aligned with the position of the semiconductor component 42 arranged in the second plane 62 below the first plane. As can be seen from the Figure 4As can be seen in FIG. 5 , for example, the first group 64 of semiconductor components 42 are electrically contacted via an L-shaped piece 98. The L-shaped piece 98 partially overlaps the edge of the opening 72, extends substantially in the vertical direction to the second plane 62 arranged below the first plane 60 and extends there to the semiconductor components 42 positioned below the opening 72. The use of the L-shaped piece 98 as a current transmission element allows a spatial separation as viewed in the Z direction 54, as shown in FIG. Figure 3 as indicated in the background.

[0058] The same applies to the semiconductor components 42 of the second group 66 of semiconductor components 42 , which are likewise accommodated in the first plane 60 on the bottom of the power module 12 .

[0059] The second group 66 of semiconductor components 42 is likewise contacted via an L-shaped piece 98, which extends essentially in a vertical direction from the second plane 62 in the direction of the first plane 60, that is, in the direction of the bottom of the power module 12. Figure 4 In the embodiment variant shown in , contact surfaces 68 , 70 extending in a second plane 62 within the multifunctional frame 50 are contact-connected to semiconductor components 42 arranged in a first plane 60 on the bottom of the power module 12 by extending essentially in a vertical direction, i.e. in the opposite Z direction 54 .

[0060] In accordance with Figure 5 and Figure 6 An enlarged schematic diagram of the L-shaped member 98 is shown in the schematic diagram of FIG. Figure 5 In the background of the drawing, a second press-in pin 78, a third press-in pin 90 and a fifth press-in pin 84 are shown in an enlarged manner, which are located behind the drawing plane, as shown in FIG. Figure 5 As shown in . Figure 5 , L-shaped pieces 98 extend through openings 72 on both sides of the web 96 in the material of the first contact surface 68, the openings being designed in this case in the form of a rectangle 74. These L-shaped pieces extend through the openings 72 and, by means of their bent short sides, contact the spacer 100, which in turn contacts the contact surface 102 on the upper side of the semiconductor component 42. Figure 5 In the schematic diagram of FIG. 1 , the underside 120 of the power module 12 is connected to a substantially flat cooling surface 106 located below the power module via a planar sintered connection 104. With the sintered connection 104 in between, the lost heat generated during operation of the semiconductor components 42 can be dissipated very effectively via the cooling surface 106 to the heat sink.

[0061] Figure 6 Basically corresponding to Figure 5 The arrangement has a multifunctional frame 50 arranged above the power module 12 and tabs 96, which are part of the first contact surface 68. Starting from these tabs, the L-shaped part 98 extends in the direction of the spacer 100 and contacts the contact surface 102 on the upper side of the semiconductor component 42. Figure 5 The embodiment variant with the multifunctional frame 50 arranged above is different, in accordance with Figure 6 In the schematic diagram of FIG. 1 , the lower side 120 of the power module 12 is connected to the cooling surface 106 arranged below the power module via a planar welding connection / adhesive connection 110. In other respects, according to Figure 5 and Figure 6 The schematic diagrams of the embodiment of the present invention correspond to each other in principle. The contact with the cooling surface 106 is made via the bottom side 120, whether via a contact according to Figure 5 The sintered connection 104 is still via according to Figure 6 By means of the soldered / adhesive bond 110 , waste heat generated during operation of the semiconductor components 42 is transported and dissipated to the heat sink, so that no excessively high temperatures occur during operation of the power module 12 .

[0062] Figure 7 An alternative contact-making possibility for the semiconductor component 42 is shown. An opening 116 is accommodated in the multifunctional frame 50. The opening 116 is covered by a copper layer 114 on the bottom side of the multifunctional frame 50. On this copper layer, a weld connection 118 is formed in the weld region 112, so that the chip, i.e. the semiconductor component 42, arranged below the copper layer 114, if necessary with an intermediate connecting spacer 100, is electrically contacted. The spacer 100 and the semiconductor component 42 located below the copper layer 114 can be surrounded by a molding mass 108 or embedded in it. On the bottom side 120 of the power module 12, the power module is connected via a sintered connection 104 (with a semiconductor component 42 according to the invention). Figure 5 ) or via welding connection / adhesive connection 110 (similar to the schematic diagram according to Figure 6 The embodiment variant of ) is connected to a cooling surface 106 which is designed to be essentially planar in order to dissipate the waste heat generated during operation of the semiconductor components 42 .

[0063] In the method according to the invention for producing a power module 12, a first conductor structure 18 having an external contact region 18.2, at least one second conductor structure 20A, 20B and a further third conductor structure 22 are provided on the power module. The first conductor structure has an external contact region 18.2, the second conductor structure has at least one external contact region 20A.2, 20B.2 and the third conductor structure has an external contact region 22. The power module 12 is assigned a multifunctional frame 50; groups 64, 66 of semiconductor components 42 are arranged in a first plane 60, which is arranged spatially separated from the second plane 62 in the multifunctional frame 50. Finally, current-conducting contact surfaces 68, 70 are arranged in the second plane 62, which contact the first and second groups 64, 66 of semiconductor components 42.

[0064] Figure 8 A perspective top view of a multifunctional frame 50 is shown, which is arranged above the power module 12, as seen in the Z direction 54. From this top view, it can be seen that a plurality of press-in pins 76, 78, 80, 84, 88, 92, 94 protrude above the multifunctional frame 50 on the upper side of the multifunctional frame, which is made of plastic material 132, for electrical contacting or for signal transmission. External contact areas 18.2, 20A, 22B.2 and 22.2 extending in the plane of the multifunctional frame protrude on the short end faces of the multifunctional frame 50 for electrical contacting. Figure 8 In the perspective top view shown in , the multifunctional frame 50 is arranged above the power module 12 in the Z direction 54. However, depending on the structural space requirements, the multifunctional frame 50 can also be arranged below the power module 12 or next to the power module in the Z direction 54.

[0065] Fig. 9 The exploded schematic diagram of the structural elements placed in the multifunctional frame 50 is shown. These structural elements are especially relatively flat contact surfaces, which are in the form of T+ bridge 134, phase bridge 136 and T- bridge 138. The T+ bridge 134 and T- bridge 138, which are arranged coplanarly one above the other, are separated from each other by an insulating layer 140, which is composed of paper or cardboard. By observing the small spacing between the T+ bridge 134 and the T- bridge 138, the magnetic field generated by the flow of current can be eliminated or these magnetic fields can cancel each other out. As a result, the parasitic effects of the flowing current can be minimized and the connection can be implemented with low inductance. The low-inductance connection leads to particularly short switching times in the case of electrical semiconductor structural elements, which is extremely beneficial to the electric drive of an electrically driven vehicle in the case of an inverter or power electronics.

[0066] In addition, according to Fig. 9As can be seen from the exploded view of FIG. 1 , the external contact regions 18 . 2 , 20 . 2 , 20B2 are also shown.

[0067] The phase bridge 136 can be contacted via the seventh press-in pin 88 and the eighth press-in pin 90. Further press-in pins, for example 92 and 94, project into a plane arranged below the phase bridge 136, ie in the direction of the base 144 of the power module 12.

[0068] Similarly, further press-in pins 76 , 78 , 80 , 84 are assigned to the current-carrying T+ bridge 134 or T− bridge 138 , which serve for electrical contacting and / or signal transmission.

[0069] From the basis Fig.10 From the schematic diagram, it can be concluded that Figure 8 The cross section of the arrangement. Fig.10 , it can be seen that, for example, starting from the phase bridge 136, the L-shaped piece 98 punches out downward in the vertical direction, extends into the second plane 62 formed by the bottom surface 144 of the power module 12, and contacts the semiconductor components 42 on the upper side of the semiconductor components, which are arranged there individually or in groups. This contact can be designed in particular as a material connection, preferably as a welded connection. The same applies to the T-bridge 138, which is also the second contact surface 70 for conducting current. Starting from this second contact surface, the L-shaped piece 98 is bent downward in the vertical direction in the opening 72 of the multifunctional frame 50 and contacts the contact surface 102 of the semiconductor components 42 with one or more spacers 100 connected in between, if necessary. These semiconductor components are arranged individually or in groups 62, 64 on the bottom surface 144 of the power module 12 and can dissipate heat via the cooling device 158 or cooling surface 106 described below.

[0070] In addition, according to Fig.10 The schematic diagram of FIG. 1 shows the coplanar arrangement of a T+ bridge 134, which is a first contact surface 68 for conducting current, and a T-bridge 138, which is a second contact surface 70 for conducting current. The smaller the spacing between these two components can be kept, the more favorable magnetic field compensation can be achieved when current flows, so that a low-inductance connection of the semiconductor components 42 can be achieved, which are arranged in the second plane 62, that is, below the multifunctional frame 50 forming the first plane 60. For the sake of completeness, the following is a schematic diagram of a coplanar arrangement of a T+ bridge 134, which is a first contact surface 68 for conducting current, and a T-bridge 138, which is a second contact surface 70 for conducting current. The smaller the spacing between these two components can be kept, the more favorable magnetic field compensation can be achieved when current flows, so that a low-inductance connection of the semiconductor components 42 can be achieved, which are arranged in the second plane 62, that is, below the multifunctional frame 50 forming the first plane 60. Figure 8 Press-in pins 76 , 78 , 80 , 84 , 88 , 92 are shown in a similar manner. Heat is removed from underside 120 of power module 12 via a cooling device 158 , which has a cooling surface 106 .

[0071] Fig.11 A power module bridge 156 is shown, which comprises a plurality of power modules 12 on a cooling surface 106, each of which has a multifunctional frame 50 arranged above the power modules and equipped, the multifunctional frame consisting of a plastic material 132. The individual power modules 12 and the multifunctional frames 50 respectively assigned to the power modules are arranged next to each other on the cooling surface 106 while maintaining a small spacing. The external contact areas 18.2, 22A.2, 22.2 and 22.B2 protrude above the short end faces of the power modules 12 for electrical contacting.

[0072] from Fig.12 It can be seen that the cooling surface 106 is arranged on the upper side of the cooling device 158, which is only schematically arranged here. The cooling surface can be designed, for example, via suitable attachment ends and lines 166, so that a coolant flows continuously through the cooling surface, so that the lower side of the power module 12 arranged on the cooling surface 106 can be continuously discharged. As a result, during the operation of the semiconductor components 42 arranged on the bottom 144 of the power module 12, the waste heat that is continuously generated can be effectively discharged. Fig.12 It can be seen from the schematic diagram of that in this embodiment variant, the assembly consisting of semiconductor components 42, multifunctional frame 50 and cooling device 158 is arranged as a connection 164 on the upper side of battery system 162. For reasons of simplicity, only a few battery cells 160 of this battery system are shown.

[0073] The invention is not limited to the embodiments described herein and the aspects emphasized therein. On the contrary, numerous modifications within the scope of a person skilled in the art can be realized within the scope given by the claims.

Claims

1. A power module (12), comprising a first circuit carrier (14) and a first conductor structure (18), at least one second conductor structure (20A, 20B) and a further third conductor structure (22), having a first group (64) of semiconductor components (42) and a second group (66) of semiconductor components (42), the first circuit carrier comprising a carrier substrate (40), the first conductor structure having an external contact region (18.2), the second conductor structure having at least one external contact region (20A.2, 20B.2), the third conductor structure comprising an external contact region (22.2), characterized in that: The power module (12) is assigned a multifunctional frame (50), wherein groups (64, 66) of semiconductor components (42) are arranged in a first plane (60), which is spatially separated from a second plane (62) in the multifunctional frame (50), and in which contact surfaces (68, 70) are accommodated, which contact the groups (64, 66) of semiconductor components (42).

2. The power module (12) according to claim 1, characterized in that Viewed in the Z direction (54), the multifunctional frame (50) is arranged above or below the power module (12).

3. The power module (12) according to claim 1 to 2, characterized in that: The current-carrying paths in the multifunctional frame (50) are designed as T+ bridges (134), T-bridges (138) and phase bridges (136) one above the other or next to one another with low inductance.

4. The power module (12) according to claims 1 to 3, characterized in that The contact surfaces (68, 70) in the second plane (62) can be contacted by means of press-in pins (80, 82; 88, 96).

5. The power module (12) according to claims 1 to 4, characterized in that A group (64, 66) of semiconductor components (42) arranged in the first plane (60) can be connected via press-in pins (84, 86; 92, 94) are connected by contacts.

6. The power module (12) according to claims 1 to 5, characterized in that The power module (12) is connected with its underside (120) to a cooling surface (106) either via a sintered connection (104) or via a welded connection or an adhesive connection (110).

7. The power module (12) according to claims 1 to 6, characterized in that A contact surface (68, 70) arranged in a second plane (62) of the multifunctional frame (50) has an opening (72) which is located above a semiconductor component (42) of a group (64, 66) of semiconductor components (42) arranged in the first plane (62).

8. The power module (12) according to claim 7, characterized in that The contact surfaces (68, 70) of the second plane (62) are contact-connected to the semiconductor components (42) arranged in the first plane (62) via an L-shaped piece (98).

9. The power module (12) according to claim 8, characterized in that: A spacer (100) is arranged between the L-shaped piece (98) and a contact surface (102) of the semiconductor component (42).

10. The power module (12) according to claim 7, characterized in that: A material-bonded connection (118) is implemented between the multifunctional frame (50) in the second plane (62) and the semiconductor components (42) of the first group (64) of semiconductor components (42).

11. The power module (12) according to claim 10, characterized in that The integrally bonded connection (118) is implemented in the opening (116) as a welded connection (118) to the copper layer (114).

12. A method for producing a power module (12) according to any one of claims 1 to 11, in which method a a first conductor structure (18), the first conductor structure having a first contact region (18.2), at least one second conductor structure (20A, 20B) having at least one external contact region (20A.2, 20B.2), a further third conductor structure (22) having an external contact region (22.2), in, The power module (12) is equipped with a multifunctional frame (50). The groups (64, 66) of semiconductor components (42) are arranged in a first plane (60) which is spatially separated from a second plane (62) in the multifunctional frame (50), Contact surfaces (68, 70) are arranged in the second plane (62) and make contact with the groups (64, 66) of semiconductor components (42).

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