Light-emitting device and method for manufacturing light-emitting device

Abstract

The embodiment of the invention provides a light-emitting device and a preparation method of the light-emitting device, and relates to the technical field of light emitting. The light-emitting device comprises a driving substrate which comprises a plurality of first grooves arranged at intervals, and the adjacent first grooves are spaced based on a substrate isolation structure; the plurality of LED chips are correspondingly and electrically connected in at least part of the first grooves of the driving substrate, and the LED chips are LED chips without growth substrates; and the wavelength conversion structures are at least arranged on the sides, away from the driving substrate, of the LED chips, the wavelength conversion structures and the LED chips are arranged in a one-to-one correspondence mode, and the wavelength conversion structures are configured to emit light rays with target wavelengths based on excitation of the LED chips. The light-emitting device is used for solving the problems that the light-emitting device is large in thickness and low in light-emitting efficiency.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of light emitting technology, and more specifically, to a light emitting device and a method for preparing the light emitting device. Background Art

[0002] With the development of transportation, cars and other means of transportation are gradually applied to people's daily travel scenes. The safety of cars and other means of transportation is one of the performance indicators that users pay attention to. Among them, in night travel scenes, accidents are easily caused by factors such as poor visual lighting conditions, bad habits of turning on and off the lights, too bright or too dark. Therefore, safe and effective lighting can improve driving safety and reduce accidents. With the development of electronic information technology, intelligent lighting systems, such as adaptive headlights, have emerged; and after many technological changes, the current matrix headlight intelligent lighting has developed rapidly and has been applied to some vehicles.

[0003] Among them, the matrix headlight is composed of a plurality of light emitting diodes (LEDs), for example, the matrix headlight may include one or more rows of LEDs arranged in a regular pattern. The matrix headlight can control the on and off of each LED individually by receiving instructions from the controller, so that the light distribution projected by the headlight can be controlled relatively quickly to make it more in line with the driving scene requirements; for example, the light at the oncoming vehicle and the forward vehicle can be controlled to dim or extinguish, and the pedestrians on both sides of the road can be illuminated, which greatly improves driving safety.

[0004] Currently, in the packaging structure of matrix headlights, it is necessary to integrate the LED into the packaging substrate, and then integrate the LED with the growth substrate with the wavelength conversion material, such as fluorescent material. Since the growth substrate of the LED is thick, the light guide distance of the LED is longer, which will cause more light to overflow from the side, affecting the luminous efficiency. In addition, the thermal conductivity of the growth substrate of the LED is weak, which easily causes heat accumulation, thereby reducing the performance of the LED and affecting the luminous efficiency; and after the LED is integrated with the wavelength conversion material, the overall thickness of the wavelength conversion layer and the growth substrate is thick, which will further increase the thickness of the light-emitting device, which is not conducive to reducing the LED gap. Summary of the invention

[0005] The exemplary embodiments of the present application provide a light-emitting device and a method for manufacturing the light-emitting device, which are used to solve the problem of large thickness of the light-emitting device.

[0006] The technical solutions provided by the embodiments of this application are as follows:

[0007] In a first aspect, an embodiment of the present application provides a light emitting device, comprising:

[0008] A driving substrate, comprising a plurality of first grooves arranged at intervals, wherein adjacent first grooves are spaced apart based on a substrate isolation structure;

[0009] A plurality of LED chips, electrically connected correspondingly in at least a portion of the first groove of the driving substrate, wherein the LED chips are LED chips without a growth substrate;

[0010] The wavelength conversion structure is at least arranged on a side of the LED chip away from the driving substrate, the wavelength conversion structure is arranged in a one-to-one correspondence with the LED chip, and the wavelength conversion structure is configured to emit light with a target wavelength based on excitation of the LED chip.

[0011] In a second aspect, an embodiment of the present application provides a method for preparing a light-emitting device, which is used to form the light-emitting device provided in the first aspect. The method for preparing the light-emitting device includes:

[0012] Providing a substrate and an LED structure, wherein the LED structure includes an LED chip and a growth substrate;

[0013] forming a substrate isolation structure and a plurality of first grooves on one side of the substrate to obtain a driving substrate;

[0014] electrically connecting the LED structure to at least a portion of the first groove of the driving substrate;

[0015] removing the growth substrate of the LED structure and retaining the LED chip;

[0016] Arrange the wavelength conversion structure at least on one side of the LED chip away from the driving substrate;

[0017] The wavelength conversion structure is arranged in a one-to-one correspondence with the LED chip, and the wavelength conversion structure is configured to emit light with a target wavelength based on excitation by the LED chip.

[0018] It can be seen from the above technical scheme that in the light-emitting device and the preparation method of the light-emitting device provided in the embodiments of the present application, the LED chip without a growth substrate is electrically connected to at least a portion of the first groove of the driving substrate, the adjacent first grooves are separated based on the substrate isolation structure, and the wavelength conversion structure is arranged on the side of the LED chip without a growth substrate away from the driving substrate. Since the LED chip does not have a growth substrate, the thickness of the wavelength conversion structure and the LED chip after integration is greatly reduced, and the thickness of the light-emitting device will also be greatly reduced, shortening the light guiding distance, improving the luminous efficiency of the light-emitting device, reducing the aspect ratio of the first groove, and can further reduce the spacing between adjacent LED chips, making the arrangement of the LED chips more compact, and reducing the subsequent packaging difficulty; at the same time, the thermal conductivity of the LED chip without the growth substrate is improved, and it is not easy to cause heat accumulation, thereby improving the performance of the LED chip and the luminous efficiency of the light-emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the implementation methods in the embodiments of the present application or the related technologies, the following is a brief introduction to the drawings required for use in the embodiments or the related technology descriptions. Obviously, the drawings described below are some embodiments of the present application, and a person skilled in the art can also obtain other drawings based on these drawings.

[0020] Figure 1 A schematic cross-sectional structure diagram of a light emitting device provided in an embodiment of the present application is shown;

[0021] Figure 2 A partial enlarged structural schematic diagram of a light emitting device provided in an embodiment of the present application is shown;

[0022] Figure 3 A schematic cross-sectional structure diagram of another light emitting device provided in an embodiment of the present application is shown;

[0023] Figure 4 A partial enlarged structural schematic diagram of another light emitting device provided in an embodiment of the present application is shown;

[0024] Figure 5 A schematic cross-sectional structure diagram of another light emitting device provided in an embodiment of the present application is shown;

[0025] Figure 6 A schematic cross-sectional structure diagram of another light emitting device provided in an embodiment of the present application is shown;

[0026] Figure 7 A schematic cross-sectional structure diagram of another light emitting device provided in an embodiment of the present application is shown;

[0027] Figure 8A schematic cross-sectional structure diagram of another light emitting device provided in an embodiment of the present application is shown;

[0028] Fig. 9 A schematic cross-sectional structure diagram of another light emitting device provided in an embodiment of the present application is shown;

[0029] Fig.10 A partial enlarged structural schematic diagram of another light emitting device provided in an embodiment of the present application is shown;

[0030] Fig.11 A partial enlarged structural schematic diagram of another light emitting device provided in an embodiment of the present application is shown;

[0031] Fig.12 A partial enlarged structural schematic diagram of another light emitting device provided in an embodiment of the present application is shown;

[0032] Fig.13 A partial enlarged structural schematic diagram of another light emitting device provided in an embodiment of the present application is shown;

[0033] Fig.14 A partial enlarged structural schematic diagram of another light emitting device provided in an embodiment of the present application is shown;

[0034] Fig.15 A partial enlarged structural schematic diagram of another light emitting device provided in an embodiment of the present application is shown;

[0035] Fig.16 A schematic diagram showing a process of a method for preparing a light-emitting device provided in an embodiment of the present application is shown;

[0036] Figure 17-Figure 27 for Fig.16 A schematic cross-sectional structure diagram of each step in the method for preparing the light-emitting device is shown. DETAILED DESCRIPTION

[0037] In order to make the purpose and implementation method of the present application clearer, the exemplary implementation method of the present application will be clearly and completely described below in conjunction with the drawings in the exemplary embodiments of the present application. Obviously, the described exemplary embodiments are only part of the embodiments of the present application, rather than all the embodiments.

[0038] It should be noted that the brief description of terms in this application is only for the convenience of understanding the embodiments described below, and is not intended to limit the embodiments of this application. Unless otherwise specified, these terms should be understood according to their common and usual meanings.

[0039] The terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover but not exclude inclusion, for example, a product or device comprising a list of components is not necessarily limited to all the components expressly listed but may include other components not expressly listed or inherent to such product or device.

[0040] In response to the problems in the background technology, in order to improve the light extraction efficiency and reduce the thickness of the light-emitting device, in an embodiment of the present application, a light-emitting device that can be used as a matrix LED light source and a preparation method thereof are proposed. By removing the growth substrate, the LED chip is arranged in a first groove spaced apart on the driving substrate, and the wavelength conversion structure is arranged on the side of the LED chip away from the driving substrate. This can reduce the thickness of the light-emitting device, shorten the light-guiding distance, improve the light-emitting efficiency of the light-emitting device, make the arrangement of the LED chips more compact, reduce the subsequent packaging difficulty, and improve the thermal conductivity of the light-emitting device.

[0041] The light-emitting device proposed in the embodiment of the present application can be applied to LED lighting scenes or display scenes, for example, it can be used in smart car lights, adaptive driving beams (Adaptive Driving Beam, ADB) or other lighting fixtures; or it can be applied to monochrome display devices. It can be understood that since the wavelength conversion structure in the technical solution proposed in the present application is an integrated monochrome wavelength conversion structure, when the light-emitting device is applied to the display scene, monochrome display can be achieved.

[0042] The light-emitting device and the method for preparing the light-emitting device provided in the embodiments of the present application are exemplarily described below in conjunction with the accompanying drawings.

[0043] For example, Figure 1 FIG. 2 shows a schematic cross-sectional structure diagram of a light emitting device provided in an embodiment of the present application. Figure 1 As shown, the light-emitting device 10 may include: a driving substrate 1, including a plurality of first grooves 11 arranged at intervals, and adjacent first grooves 11 are spaced apart based on a substrate isolation structure 14; a plurality of LED chips 2, correspondingly and electrically connected in at least part of the first grooves 11 of the driving substrate 1, the LED chips 2 are LED chips 2 without a growth substrate; a wavelength conversion structure 3, at least arranged on a side of the LED chip 2 away from the driving substrate 1, the wavelength conversion structure 3 is arranged in a one-to-one correspondence with the LED chip 2, and the wavelength conversion structure 3 is configured to emit light with a target wavelength based on excitation of the LED chip 2.

[0044] The driving substrate 1 may have a circuit structure therein for transmitting an electrical signal for the LED chip 2 to the LED chip 2 to drive the LED chip 2 to emit light. The LED chip 2 may have a cathode and an anode, and the cathode and the anode of the LED chip 2 are electrically connected to the driving substrate 1 respectively to form an electrical signal loop between the LED chip 2 and the driving substrate 1, so as to emit light based on the electrical signal transmitted by the driving substrate 1.

[0045] Exemplarily, a plurality of first grooves 11 may be provided on the driving substrate 1, and a plurality of LED chips 2 are provided in at least a portion of the first grooves 11 of the driving substrate 1 and are electrically connected to the driving substrate 1. Exemplarily, Figure 1 In the structure shown, the planar shape of the first groove 11 may be an inverted trapezoid; corresponding to the three-dimensional structure of the light emitting device 10, the first groove 11 may be a tripod shape, a truncated cone shape, or a cone shape with a polygonal bottom surface 11B, which is not limited here.

[0046] Figure 1 The figure shows that the number of first grooves 11 is 6 and the number of LED chips 2 is 6. Each LED chip 2 is arranged in a one-to-one correspondence with the first groove 11 and is electrically connected to the driving substrate 1. When the first grooves 11 are formed, a substrate isolation structure 14 is also formed. The substrate isolation structure 14 separates adjacent first grooves 11 and also separates the LED chips 2 arranged in adjacent first grooves 11. Figure 1 The number of substrate isolation structures 14 is exemplarily shown as 7. The substrate isolation structure 14 and the driving substrate 1 can be made integrally and made of the same material, for example, ceramic material, thereby reducing the difficulty of making the light-emitting device 10 and improving the heat dissipation performance of the light-emitting device 10.

[0047] In other embodiments, the number of first grooves 11, LED chips 2 and substrate isolation structures 14 can also be other numbers respectively, and the number ratio and position correspondence between the first grooves 11 and the LED chips 2 can also be other ratios and other relationships, which are not limited here.

[0048] For example, the LED chip 2 may emit light from the bottom surface 11B, the top surface or the side surface 11A, which is not limited here. The light color of the LED chip 2 may be blue or other colors, which is not limited here.

[0049] The LED chip 2 of the embodiment of the present application is an LED chip 2 without a growth substrate. The thickness of the LED chip 2 without the growth substrate can be reduced from 150 microns to 5 microns, for example. This avoids the problem that the light guiding distance is long and more light is emitted from the side, resulting in low luminous efficiency due to the thicker substrate of the LED chip 2, which is usually between 50-350 microns. It also avoids the problem that the thermal conductivity of the growth substrate is weak, which easily causes heat accumulation and causes the LED performance to decline, thereby improving the luminous efficiency of the LED chip 2.

[0050] The wavelength conversion structure 3 is an optical film layer or optical element that emits light with a target wavelength by photoluminescence in response to the light irradiated thereon. Exemplarily, the wavelength conversion structure 3 may include a quantum dot conversion material or a fluorescent conversion material. The wavelength conversion structure 3 may specifically be a fluorescent sheet, a fluorescent layer or a quantum dot layer, which is not limited here. In the embodiment of the present disclosure, the light irradiated onto the wavelength conversion structure 3 is emitted by the LED chip 2. Based on the principle that energy cannot be increased out of thin air, the target wavelength of the light emitted by the wavelength conversion structure 3 is smaller than the wavelength of the light emitted by the LED chip 2 itself. For example, the light emitted by the LED chip 2 may be blue light, and the light excited by the wavelength conversion structure 3 based on this may be red light, green light, or other light with less energy than blue light, which is not limited here.

[0051] Exemplarily, taking fluorescence as an example, the wavelength conversion structure 3 may be a hard wavelength conversion structure 3, such as a fluorescent sheet made of glass or ceramic; or, the wavelength conversion structure 3 may also be a soft wavelength conversion structure 3, such as a fluorescent layer formed by using fluorescent materials by spraying, spin coating and other processes. The type of fluorescent material is not limited here, and it may be any one or several fluorescent materials known to those skilled in the art.

[0052] The wavelength conversion structure 3 is arranged on the side of the LED chip 2 away from the driving substrate 1, and the wavelength conversion structure 3 is arranged corresponding to the LED chip 2 without a growth substrate, so that the thickness of the light-emitting device 10 can be greatly reduced, the light-guiding distance of the LED chip 2 is reduced, and the light-emitting efficiency of the light-emitting device 10 is improved. At the same time, the aspect ratio of the first groove 11 accommodating the LED chip 2 and the wavelength conversion structure 3 is also reduced, which is convenient for reducing the distance between adjacent LED chips 2 and making the arrangement of the LED chips 2 more compact.

[0053] In the embodiment of the present application, the LED chip 2 without a growth substrate is electrically connected to at least a portion of the first groove 11 of the driving substrate 1, adjacent first grooves 111 are separated by the substrate isolation structure 14, and the wavelength conversion structure 3 is arranged on the side of the LED chip 2 without a growth substrate away from the driving substrate 1. Since the LED chip 2 does not have a growth substrate, the thickness of the light-emitting device 10 is greatly reduced, the light-guiding distance is shortened, the luminous efficiency of the light-emitting device 10 is improved, and the subsequent packaging difficulty is reduced; at the same time, the thermal conductivity of the LED chip 2 without the growth substrate is improved, and it is not easy to cause heat accumulation, which improves the performance of the LED chip 2 and the luminous efficiency of the light-emitting device 10; in addition, the thickness of the wavelength conversion structure 3 and the LED chip 2 after integration is greatly reduced, which greatly reduces the aspect ratio of the first groove 11, and can further reduce the spacing between adjacent LED chips 2, so that the arrangement of the LED chips 2 is more compact.

[0054] Figure 2 A locally enlarged structural schematic diagram of the light-emitting device provided in an embodiment of the present application is shown, specifically showing a structure of a single light-emitting unit, wherein each LED chip 2 and a one-to-one corresponding wavelength conversion structure 3 can be equivalent to a light-emitting unit, and the light-emitting units described in subsequent embodiments can be understood by reference and will not be repeated later.

[0055] In some embodiments, in combination Figure 1 and Figure 2 The first groove 11 includes a side surface 11A and a bottom surface 11B; a reflective layer 4 is provided on the side surface 11A, and part of the light emitted by the LED chip 2 is irradiated to the reflective layer 4, and the reflective layer 4 is configured to reflect the light, and at least part of the reflected light is irradiated to the wavelength conversion structure 3; a soldering pad 111 is provided on the bottom surface 11B, and the LED chip 2 is electrically connected to the driving substrate 1 through the soldering pad 111.

[0056] Exemplarily, a first groove 11 is surrounded by two side surfaces 11A and a bottom surface 11B, and a reflective layer 4 is provided on each side surface 11A. The reflective layer 4 can reflect the light emitted by the LED chip 2 and irradiated to the side surface 11A. At least part of the light is reflected and irradiated to the wavelength conversion structure 3, so that as much light as possible is emitted from the wavelength conversion structure 3, thereby increasing the light output of the wavelength conversion structure 3 and improving the light output efficiency of the light-emitting device 10.

[0057] At the same time, by setting the reflective layer 4 to reflect light, it is also possible to prevent light between the light-emitting units from being transmitted to each other, which can improve or even avoid the crosstalk problem between adjacent light-emitting units, and is conducive to achieving precise control of lighting or display needs and improving lighting and display effects.

[0058] The LED chip 2122 may include a cathode pin and an anode pin, and the driving substrate 1 may include a connection structure corresponding to the pins of the LED chip 2, for example Figure 1 and Figure 2 The electrical connection between the LED chip 2 and the driving substrate 1 is achieved through the electrical connection between the pin and the pad 111 structure.

[0059] For example, the cathode pin and the anode pin of the LED chip 2 may be located on the same side of the LED chip 2, such as Figure 1 It can also be located on different sides of the LED chip 2, Figure 1 For example, the LED chip 2 can be electrically connected to the driving substrate 1 in a front-mounted manner, or in a flip-mounted manner, or in a side-mounted manner, which is not limited in the embodiments of the present application.

[0060] Figure 3 FIG. 4 is a schematic cross-sectional view of another light emitting device according to an embodiment of the present application. Figure 4 A partial enlarged structural diagram of another light emitting device provided in an embodiment of the present application is shown. Figures 1 to 3 The angle between the side surface 11A and the bottom surface 11B is less than 90°, and the side surface 11A is a plane and / or a curved surface.

[0061] For example, Figure 2 and Figure 4 It is shown that the angle between the bottom surface 11B and the side surface 11A is less than 90°, so that the inner angle of the bottom surface 11B of the first groove 11 is an obtuse angle, thereby forming an inverted trapezoidal structure with a larger opening, which is convenient for accommodating the LED chip 2 and facilitating the installation of the LED chip 2. Providing the reflective layer 4 on the inclined side surface 11A is conducive to reflecting the light emitted by the LED chip 2, thereby improving the light extraction efficiency of the light emitting device 10.

[0062] Figure 2 It is shown that the side surface 11A of the first groove 11 is set to be a plane, and the bottom surface 11B of the first groove 11 is a plane, which is convenient for integral molding when manufacturing the drive substrate 1, reduces the difficulty of preparing the drive substrate 1, reduces the process cost, and improves the product yield.

[0063] Figure 4It is shown that the side surface 11A of the first groove 11 is set as a curved surface, and the bottom surface 11B of the first groove 11 is a plane. The reflective layer 4 is set on the curved side surface 11A. The inclination angle of each position can be set according to the reflection requirements, and the inclination angles of different points on the curved surface are different. The reflection angle can be adjusted by using different inclination angles, so that the light is reflected from positions with different inclination angles, thereby improving the overall reflection efficiency of the light-emitting device.

[0064] It should be noted that, in a light-emitting device 10, the side surface 11A can be set as only a plane, or as only a curved surface, or as both a curved surface and a plane, depending on the actual use of the light-emitting device, and the embodiments of the present application are not limited thereto.

[0065] Figure 5 FIG. 2 shows a schematic diagram of the structure of another light emitting device provided in an embodiment of the present application. In some embodiments, Figure 5 It is shown that the angle between the side surface 11A and the bottom surface 11B can also be, for example, 90°, so that the inner angle of the bottom surface 11B of the first groove 11 is a right angle, that is, the first groove 11 forms a rectangular structure, which can reduce the difficulty of preparing the first groove 11 and improve the product yield.

[0066] Figure 6 A schematic cross-sectional structure diagram of another light-emitting device provided by an embodiment of the present application is shown. In some embodiments, the light-emitting device further includes: a first encapsulating glue 5, which is filled in the gap between the first groove 11, the LED chip 2 and the wavelength conversion structure 3, and is configured to encapsulate the LED chip 2 and the wavelength conversion structure 3, the first encapsulating glue 5 includes a second groove 12, and the second groove 12 is aligned with the substrate isolation structure 14; a second encapsulating glue 6, which is at least filled in the second groove 12; wherein the reflectivity of the first encapsulating glue 5 is greater than the preset reflectivity, and the absorptivity of the second encapsulating glue 6 is greater than the preset absorptivity.

[0067] For example, Figure 5 As shown, the first encapsulation glue 5 is filled in the first groove 11 and in the gap between the LED chip 2 and the wavelength conversion structure 3. On the one hand, the gap in the driving substrate 1 can be filled. The smaller the gap, the higher the stability. Therefore, the overall structural stability of the driving substrate 1 and the light-emitting device 10 can be improved. On the other hand, the first encapsulation glue 5 can reflect the light that is not directly emitted from the light-emitting side 31A of the wavelength conversion structure 3, so that as much light as possible is emitted from the light-emitting side 31A, thereby increasing the light output of the wavelength conversion structure 3 and improving the light output efficiency of the light-emitting device 10.

[0068] Exemplarily, the first encapsulation glue 5 may include a reflective structure, and the reflectivity of the first encapsulation glue 5 is greater than a preset reflectivity. For example, a reflective substance, such as a white material, may be doped into the first encapsulation glue 5 so that the first encapsulation glue 5 can form a reflective layer 4 between adjacent light-emitting units.

[0069] Exemplarily, the second encapsulation glue 6 is filled in the second groove 12. On the one hand, the gap in the first encapsulation glue 5 can be filled. Since the smaller the gap, the higher the stability, the overall structural stability of the first encapsulation glue 5 and the light-emitting device 10 can be improved, which is beneficial to extending the service life of the light-emitting device 10. On the other hand, the second encapsulation glue 6 can absorb light, thereby preventing the mutual transmission of light between adjacent light-emitting units, and can improve or even avoid the problem of light crosstalk between adjacent light-emitting units, which is beneficial to achieve precise regulation for lighting or display needs and improve lighting and display effects.

[0070] Exemplarily, the second encapsulation glue 6 may include a light-absorbing structure, and the absorption rate of the second encapsulation glue 6 is greater than a preset absorption rate. For example, the second encapsulation glue 6 may be doped with a light-absorbing substance, such as a black material or a dark material, so that the second encapsulation glue 6 can form a black matrix between adjacent light-emitting units.

[0071] Figure 7 FIG. 4 shows a schematic cross-sectional structure diagram of another light emitting device provided in an embodiment of the present application. Figure 8 FIG. 2 shows a schematic cross-sectional structure diagram of another light emitting device provided in an embodiment of the present application. Figures 6 to 8 The cross-sectional shape of the second packaging glue 6 along the preset plane is at least one of an inverted trapezoid, a nail shape and a rectangle; wherein the nail-shaped second packaging glue 6 includes a first portion of packaging glue 61 and a second portion of packaging glue 62, the first portion of packaging glue 61 is filled in the second groove 12, and the second portion of packaging glue 62 is higher than the second groove 12; wherein the preset plane is a plane perpendicular to the drive substrate 1.

[0072] Figure 6 It is shown that the cross-sectional shape of the second groove 12 may be, for example, an inverted trapezoid. The second packaging glue 6 is filled in the second groove 12 so that the cross-sectional shape of the second packaging glue 6 along the preset plane is an inverted trapezoid.

[0073] Figure 7 As shown in the figure, the cross-sectional shape of the second encapsulation glue 6 along the preset plane can also be, for example, a nail shape, the first part of the encapsulation glue 61 is filled in the second groove 12, the second part of the encapsulation glue 62 is filled in the second groove 12, the second part of the encapsulation glue 62 is higher than the second groove 12, and the cross-sectional shape of the second part of the encapsulation glue 62 along the preset screen is, for example, Figure 7As shown in the rectangle, a first portion of encapsulation glue 61 and a second portion of encapsulation glue 62 are arranged correspondingly to form a nail-shaped second encapsulation glue 6. The first portion of encapsulation glue 61 can absorb the light emitted by the LED chip 2 but not passing through the wavelength conversion structure 3, avoiding light crosstalk between adjacent light-emitting units, and the second portion of encapsulation glue 62 can absorb the light emitted by the LED chip 2 through the wavelength conversion structure 3, thereby blocking the light emitted at an inclined angle, reducing the divergence angle of the light, increasing the light emitted in the vertical direction, and improving the lighting and display effects.

[0074] Figure 8 It is shown that the cross-sectional shape of the second groove 12 can be, for example, a rectangle. The second packaging glue 6 is filled in the second groove 12 so that the cross-sectional shape of the second packaging glue 6 along the preset plane is a rectangle. This can reduce the process difficulty of filling the second packaging glue 6 and the difficulty of preparing the second groove 12, thereby improving the product yield.

[0075] In some embodiments, the gap between adjacent second packaging adhesives 6 is larger than the plane size of the wavelength conversion structure 3 ; or, the second packaging adhesive 6 fills the gap between adjacent wavelength conversion structures 3 .

[0076] For example, Figure 6 and Figure 8 It is shown in FIG. 1 that the gap between adjacent second packaging glues 6 is larger than the plane size of the wavelength conversion structure 3 . Figure 7 It is shown that the gap between the second part of the packaging glue 62 is larger than the gap of the wavelength conversion structure 3, and there is still a part of the first packaging glue 5 between the second packaging glue 6 and the wavelength conversion structure 3. The first packaging glue 5 between the second packaging glue 6 and the wavelength conversion structure 3 can reflect the light that is not directly emitted from the light-emitting side 31A of the wavelength conversion structure 3, so that as much light as possible is emitted from the light-emitting side 31A, thereby increasing the light output of the wavelength conversion structure 3 and improving the light output efficiency of the light-emitting device 10.

[0077] Fig. 9 FIG. 2 shows a cross-sectional structure diagram of another light emitting device provided in an embodiment of the present application. Fig. 9 As shown, the second encapsulant 6 can also fill the gaps between adjacent wavelength conversion structures 3. The smaller the gaps, the higher the stability, so as to further improve the overall structural stability of the light-emitting device 10, which is beneficial to extend the service life of the light-emitting device 10. In addition, the second encapsulant 6 filling the gaps between adjacent wavelength conversion structures 3 can also absorb more light, effectively avoiding the light crosstalk problem between adjacent light-emitting units.

[0078] Therefore, the substrate isolation structure 14 and the second packaging glue 6 in the second groove 12 are used to form a spindle-shaped isolation structure. Since the growth substrate of the LED chip 2 has been removed, the substrate isolation structure 14 and the second groove 12 do not need to be of a large size. The manufacturing difficulty of the light-emitting device 10 is significantly reduced, and the isolation effect is greatly improved, thereby avoiding light crosstalk between adjacent light-emitting units and allowing more light to be emitted from the light-emitting side 31A, thereby improving the luminous efficiency of the light-emitting device 10.

[0079] Fig.10 FIG. 2 shows a schematic diagram of a partially enlarged structure of another light emitting device provided in an embodiment of the present application. Fig.10 As shown, the light-emitting device further includes: a bonding layer 7, located between the wavelength conversion structure 3 and the LED chip 2, and the bonding layer 7 is used to integrate the wavelength conversion structure 3 and the LED chip 2; wherein the planar size of the bonding layer 7 is equal to the planar size of the LED chip 2.

[0080] For example, Fig.10 As shown, after the growth substrate is removed from the LED chip 2, a bonding layer 7 is formed at the position of the original growth substrate, and a wavelength conversion structure 3 is formed on the side of the bonding layer 7 away from the LED chip 2. The wavelength conversion structure 3 and the LED chip 2 can be bonded and adhered together by the bonding layer 7, thereby avoiding the problem of poor adhesion between the LED chip 2 and the wavelength conversion structure 3, which causes the reliability of the light-emitting device 10 to decrease. In addition, the planar size of the bonding layer 7 is equal to the planar size of the LED chip 2, which further enhances the adhesion between the LED chip 2 and the wavelength conversion structure 3, and improves the overall structural stability of the light-emitting device 10.

[0081] Fig.11 A partial enlarged structural diagram of another light emitting device provided in an embodiment of the present application is shown. Figures 1 to 11 , the planar size of the wavelength conversion structure 3 is equal to or larger than the planar size of the LED chip 2 , and equal to or smaller than 1.5 times the planar size of the LED chip 2 .

[0082] For example, Figures 1 to 10 It is exemplified in the figure that the planar size of the wavelength conversion structure 3 can be equal to the planar size of the LED chip 2. Such a setting is beneficial to reducing the process difficulty and improving the yield rate on the one hand, and is also beneficial to the precise alignment between the LED chip 2 and the wavelength conversion structure 3 on the other hand.

[0083] Fig.11It is exemplarily shown that the plane size of the wavelength conversion structure 3 is larger than the plane size of the LED chip 2. Since the circuit structure on the driving substrate 1 requires a certain redundancy and the spacing between the LED chips 2 is relatively large, the plane size of the wavelength conversion structure 3 can be set to be larger than the plane size of the LED chip 2, so that the light is emitted from the wavelength conversion structure 3, thereby reducing the spacing between adjacent light-emitting units and improving the display effect of the lighting or display device. In addition, in order to avoid the excessive size of the first groove 11 caused by the excessive plane size of the wavelength conversion structure 3, the plane size of the wavelength conversion structure 3 can be set to be equal to or less than 1.5 times the plane size of the LED chip 2, saving the material of the wavelength conversion structure 3 and reducing the cost and manufacturing difficulty.

[0084] Fig.12 A partial enlarged structural schematic diagram of another light emitting device provided in an embodiment of the present application is shown. Fig.13 A partial enlarged structural schematic diagram of another light emitting device provided in an embodiment of the present application is shown. Fig.14 A partial enlarged structural schematic diagram of another light emitting device provided in an embodiment of the present application is shown. Fig.15 A partial enlarged structural diagram of another light emitting device provided in an embodiment of the present application is shown. Figures 12 to 15 The wavelength conversion structure 3 has a third groove 13, and the third groove 13 is configured to accommodate at least part of the bonding layer 7, or the third groove 13 is configured to accommodate the bonding layer 7 and at least part of the LED chip 2; the side surface of the third groove 13 is vertically or inclined relative to the top surface of the third groove 13, and the opening size of the third groove 13 is equal to or larger than the size of the LED.

[0085] For example, Fig.12 It is shown that the side surface 13A of the third groove 13 is vertically arranged relative to the top surface 13B of the third groove, the opening size of the third groove 13 is equal to the size of the LED, the bottom surface 13C of the third groove 13 is flush with the bottom surface of the bonding layer 7, that is, flush with the upper surface of the LED chip 2, and the bonding layer 7 is completely accommodated in the corresponding third groove 13. The bonding layer 7 and the third groove 13 can be used as a reference structure for alignment. In some embodiments, the bonding layer 7 can also be partially accommodated in the third groove 13, which is not specifically shown in the drawings. In some embodiments, the bottom surface 13C of the third groove 13 can also be slightly lower than the upper surface of the LED chip 2, that is, the bottom surface 13C of the third groove 13 is between the upper surface of the LED chip 2 and the lower surface of the LED chip 2, which is not specifically shown in the drawings.

[0086] Fig.13It is shown that the side surface 13A of the third groove 13 is vertically arranged relative to the top surface 13B of the third groove, the opening size of the third groove 13 is equal to the size of the LED, the bottom surface 13C of the third groove 13 is flush with the bottom surface of the LED chip 2, the bonding layer 7 and the LED chip 2 are all accommodated in the third groove 13, and the light emitted from the side of the LED chip 2 can be emitted from the wavelength conversion structure 3 that wraps the LED chip 2, thereby increasing the light output of the light-emitting unit. The LED chip 2, the bonding layer 7 and the third groove 13 can be used as a reference structure for alignment, which is conducive to achieving precise alignment between the LED chip 2, the bonding layer 7 and the third groove 13, and the LED chip 2, the bonding layer 7 and the first groove 11 are mutually embedded based on the above-mentioned accommodation relationship, which can also improve the overall structural stability of the light-emitting device 10, which is conducive to improving the service life of the light-emitting device 10.

[0087] In some embodiments, the bottom surface 13C of the third groove 13 may also be slightly higher than the lower surface of the LED chip 2, that is, the bottom surface 13C of the third groove 13 is between the upper surface of the LED chip 2 and the lower surface of the LED chip 2, which is not specifically shown in the drawings.

[0088] Fig.14 It is shown that the side surface 13A of the third groove 13 is inclined relative to the top surface 13B of the third groove 13, the opening size of the third groove 13 is larger than the size of the LED chip 2, the size of the top surface 13A of the third groove 13 is slightly larger than the plane size of the LED chip 2, and the size of the bottom surface 13C of the third groove 13 is larger than the plane size of the LED chip 2, so that the LED chip 2 and the bonding layer 7 can be accommodated in the third groove 13, and the bottom surface 13C of the third groove 13 is located between the upper surface and the lower surface of the LED chip 2.

[0089] Fig.15 It is shown that the side surface 13A of the third groove 13 is inclined relative to the top surface 13B of the third groove 13, the opening size of the third groove 13 is larger than the size of the LED chip 2, the size of the top surface 13A of the third groove 13 is slightly larger than the plane size of the LED chip 2, and the size of the bottom surface 13C of the third groove 13 is larger than the plane size of the LED chip 2, so that the LED chip 2 and the bonding layer 7 can be accommodated in the third groove 13, and the bottom surface 13C of the third groove 13 is flush with the lower surface of the LED chip 2.

[0090] In this way, precise alignment between the LED chip 2, the bonding layer 7 and the wavelength conversion structure 3 is achieved, and the LED chip 2, the bonding layer 7 and the third groove 13 are mutually embedded based on the above-mentioned accommodation relationship, which can also improve the overall structural stability of the light-emitting device 10, which is beneficial to improving the service life of the light-emitting device 10.

[0091] In the embodiment of the present application, the LED chip 2 without a growth substrate is electrically connected to at least a portion of the first groove 11 of the driving substrate 1, adjacent first grooves 11 are separated by the substrate isolation structure 14, and the wavelength conversion structure 3 is arranged on the side of the LED chip 2 without a growth substrate away from the driving substrate 1. Since the LED chip 2 does not have a growth substrate, the thickness of the light-emitting device 10 is greatly reduced, the light-guiding distance is shortened, the luminous efficiency of the light-emitting device 10 is improved, and the subsequent packaging difficulty is reduced; at the same time, the thermal conductivity of the LED chip 2 without the growth substrate is improved, and it is not easy to cause heat accumulation, which improves the performance of the LED chip 2 and the luminous efficiency of the light-emitting device 10; in addition, the thickness of the wavelength conversion structure 3 and the LED chip 2 after integration is greatly reduced, which greatly reduces the aspect ratio of the first groove 11, and can further reduce the spacing between adjacent LED chips 2, so that the arrangement of the LED chips 2 is more compact.

[0092] Based on the same inventive concept, an embodiment of the present application also provides a method for preparing a light-emitting device, which is used to form any of the light-emitting devices provided in the above embodiments, and can achieve corresponding beneficial effects. The similarities can be understood by referring to the explanation of the light-emitting device above, and will not be repeated here.

[0093] For example, Fig.16 The schematic diagram of the process of preparing a light emitting device provided in an embodiment of the present application is shown. Fig.16 The preparation method of the light emitting device may include the following steps:

[0094] S210 , providing a substrate and an LED structure.

[0095] The LED structure includes an LED chip and a growth substrate.

[0096] Fig.17 A schematic structural diagram of a substrate provided in an embodiment of the present application is shown. The substrate 1 may be a ceramic substrate, for example. Fig.18 A schematic diagram of an LED structure provided in an embodiment of the present application is shown. The LED structure 20 includes, for example, a growth substrate 21 , which may be, for example, a sapphire substrate. The LED structure 2 also includes an LED chip 2 , which may have a cathode and an anode.

[0097] S220 , forming a substrate isolation structure and a plurality of first grooves on one side of the substrate to obtain a driving substrate.

[0098] For example, Fig.19 As shown, the first groove 11 can be formed by mask etching, laser etching, etc. The bottom surface size of the first groove 11 is slightly larger than the size of the LED chip 2, so as to accommodate the LED chip 2 in position and improve the packaging speed and accuracy.

[0099] While etching to form the first groove 11 , a substrate isolation structure 14 is also formed. To form the substrate isolation structure 14 , the substrate isolation structure at the edge of the substrate does not need to be very high, and the size may be, for example, 3 μm to 60 μm.

[0100] In some embodiments, after forming a plurality of substrate isolation structures and a plurality of first grooves, the method further includes:

[0101] Disposing a reflective layer on the side of the first groove;

[0102] A pad is disposed on the bottom surface of the first groove.

[0103] Specifically, Fig. 20 As shown, the first groove 11 includes a side surface 11A and a bottom surface 11B. The reflective layer disposed on the side surface 11A of the first groove 11 can reflect the light emitted by the LED chip 2, so that at least part of the reflected light can be emitted from the light-emitting side of the wavelength conversion structure, thereby improving the light-emitting efficiency. The bottom surface 11B of the first groove 11 of the driving substrate 1 may include a connection structure disposed corresponding to the pins of the LED chip 2, such as a solder pad 111.

[0104] S230 , electrically connecting the LED structure to at least a portion of the first groove of the driving substrate.

[0105] Exemplarily, the LED structure 20 may include a cathode pin and an anode pin. Fig.21 It is shown that the electrical connection between the LED structure 20 and the driving substrate 1 is achieved through the electrical connection between the cathode pin and the anode pin of the LED structure 20 and the pad 111 .

[0106] S240, removing the growth substrate of the LED structure and retaining the LED chip.

[0107] Fig. 22 FIG. 2 exemplarily shows a process of removing the growth substrate 21 of the LED structure 20. The growth substrate 21 can be removed by laser lift-off or wet etching. Fig.23 It is shown that only the LED chip is retained on the driving substrate, which can greatly reduce the overall thickness of the light-emitting device 10 and avoid the problem of heat accumulation caused by the weak thermal conductivity of the growth substrate 21, thereby improving the light-emitting performance of the LED chip 2 and the light-emitting efficiency of the light-emitting device 10.

[0108] S250, disposing the wavelength conversion structure at least on a side of the LED chip away from the driving substrate.

[0109] The wavelength conversion structure is arranged in one-to-one correspondence with the LED chip, and the wavelength conversion structure is configured to emit light with a target wavelength based on excitation of the LED chip.

[0110] For example, Fig.24 As shown, the wavelength conversion structure 3 is arranged corresponding to the side of the LED chip 2 away from the driving substrate 1, and the LED chip 2 excites the wavelength conversion structure 3 to emit light of a target wavelength. Fig. 22 It is exemplarily shown that the planar size of the wavelength conversion structure 3 is the same as the planar size of the LED chip 2. The planar size of the wavelength conversion structure 3 may also be larger than the planar size of the LED chip 2. The details can be understood by referring to the above embodiments and will not be elaborated here.

[0111] In some embodiments, the wavelength conversion structure is disposed at least behind the side of the LED chip facing away from the driving substrate, and the method further comprises:

[0112] The first packaging glue is filled in the gap between the first groove, the LED chip and the wavelength conversion structure.

[0113] For example, Fig.25 It is shown that the first encapsulation glue is filled in the gap between the first groove 11, the LED chip 2 and the wavelength conversion structure 3. On the one hand, the first encapsulation glue 5 enables the gap in the driving substrate 1 to be filled. The smaller the gap, the higher the stability. Therefore, the overall structural stability of the driving substrate 1 and the light-emitting device 10 can be improved. On the other hand, the first encapsulation glue 5 can reflect the light that is not directly emitted from the light-emitting side 31A of the wavelength conversion structure 3, so that as much light as possible is emitted from the light-emitting side 31A, thereby increasing the light output of the wavelength conversion structure 3 and improving the light output efficiency of the light-emitting device 10. The first encapsulation glue 5 can, for example, be a reflective structure doped with a reflective material, and the reflectivity of the first encapsulation glue 5 is greater than the preset reflectivity.

[0114] In some embodiments, after filling the first packaging glue in the first groove, the LED chip, and the gap between the wavelength conversion structure, the method further includes:

[0115] A second groove is arranged at the first packaging glue, and the second groove is arranged in alignment with the substrate isolation structure;

[0116] The second groove is filled with a second packaging adhesive.

[0117] For example, Fig.26As shown, after the first encapsulation glue 5 is filled, a groove is formed at the position where the first encapsulation glue 5 and the substrate isolation structure 14 are aligned to form a second groove 12, and the second encapsulation glue 6 is filled into the second groove 12 as shown in 27. On the one hand, the second encapsulation glue 6 can fill the gap of the first encapsulation glue 5, improve the overall structural stability of the first encapsulation glue 5 and the light-emitting device 10, and help to extend the service life of the light-emitting device 10. On the other hand, the second encapsulation glue 6 can be a light-absorbing structure, which can prevent the light emitted by adjacent LED chips 2 from transmitting to each other, and can improve or even avoid the light crosstalk problem between adjacent light-emitting units, which is conducive to achieving precise regulation for lighting or display needs and improving lighting and display effects.

[0118] It should be noted that Fig.19 , Fig. 20 , Fig.21 , Figure 23 to Figure 27 The side of the first groove is exemplarily shown as a plane. The side of the first groove can also be set as a curved surface with reference to the above embodiment. The specific embodiment and beneficial effects refer to the above embodiment, for example Figure 3 The corresponding embodiments are understood and will not be described in detail here.

[0119] In the light-emitting device and the preparation method of the light-emitting device provided in the embodiments of the present application, the LED chip without the growth substrate is electrically connected to at least a portion of the first groove of the driving substrate, the adjacent first grooves are separated by the substrate isolation structure, and the wavelength conversion structure is arranged on the side of the LED chip without the growth substrate away from the driving substrate. Since the LED chip does not have a growth substrate, the thickness of the wavelength conversion structure and the LED chip after integration is greatly reduced, and the thickness of the light-emitting device is also greatly reduced, shortening the light guiding distance, improving the luminous efficiency of the light-emitting device, reducing the aspect ratio of the first groove, and can further reduce the spacing between adjacent LED chips, making the arrangement of the LED chips more compact, and reducing the difficulty of subsequent packaging; at the same time, the thermal conductivity of the LED chip without the growth substrate is improved, and it is not easy to cause heat accumulation, thereby improving the performance of the LED chip and the luminous efficiency of the light-emitting device.

[0120] On the basis of the above-mentioned embodiments, an embodiment of the present application further provides a lighting device, which may include any one of the light-emitting devices provided in the above-mentioned embodiments and can achieve corresponding beneficial effects.

[0121] For example, the lighting device may be a smart headlight, an adaptive high beam headlight or other lighting fixtures used in a vehicle.

[0122] In other embodiments, the light emitting device may also be used in a monochrome display device, which is not limited here.

[0123] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

[0124] For the convenience of explanation, the above description has been made in conjunction with specific embodiments. However, the above exemplary discussion is not intended to be exhaustive or limit the embodiments to the specific forms disclosed above. Based on the above teachings, various modifications and variations can be obtained. The selection and description of the above embodiments are to better explain the principles and practical applications, so that those skilled in the art can better use the embodiments and various different variations of the embodiments suitable for specific use considerations.

Claims

1. A light emitting device, characterized in that: include: A driving substrate, comprising a plurality of first grooves arranged at intervals, wherein adjacent first grooves are spaced apart based on a substrate isolation structure; A plurality of LED chips, electrically connected correspondingly in at least a portion of the first groove of the driving substrate, wherein the LED chips are LED chips without a growth substrate; The wavelength conversion structure is at least arranged on a side of the LED chip away from the driving substrate, the wavelength conversion structure is arranged in a one-to-one correspondence with the LED chip, and the wavelength conversion structure is configured to emit light with a target wavelength based on excitation of the LED chip.

2. The device according to claim 1, characterized in that The first groove includes a side surface and a bottom surface; A reflective layer is disposed on the side surface, part of the light emitted by the LED chip is irradiated to the reflective layer, and the reflective layer is configured to reflect the light, and at least part of the reflected light is irradiated to the wavelength conversion structure; The bottom surface is provided with a soldering pad, and the LED chip is electrically connected to the driving substrate through the soldering pad.

3. The device according to claim 2, characterized in that The angle between the side surface and the bottom surface is less than 90°, and the side surface is a plane and / or a curved surface.

4. The device according to any one of claims 1 to 3, characterized in that: Also includes: A first packaging glue is filled in the gap between the first groove, the LED chip and the wavelength conversion structure, and is configured to encapsulate the LED chip and the wavelength conversion structure, wherein the first packaging glue includes a second groove, and the second groove is aligned with the substrate isolation structure; A second packaging glue is filled at least in the second groove; The reflectivity of the first packaging glue is greater than a preset reflectivity, and the absorptivity of the second packaging glue is greater than a preset absorptivity.

5. The device according to claim 4, characterized in that The cross-sectional shape of the second packaging glue along the preset plane is at least one of an inverted trapezoid, a nail shape and a rectangle; The second nail-shaped packaging glue comprises a first portion of packaging glue and a second portion of packaging glue, the first portion of packaging glue is filled in the second groove, and the second portion of packaging glue is higher than the second groove; Wherein, the preset plane is a plane perpendicular to the driving substrate.

6. The device according to claim 4, characterized in that The gap between adjacent second packaging glues is larger than the plane size of the wavelength conversion structure; Alternatively, the second packaging glue fills up the gaps between adjacent wavelength conversion structures.

7. The device according to claim 1, characterized in that Also includes: A bonding layer, located between the wavelength conversion structure and the LED chip, and used to integrate the wavelength conversion structure and the LED chip; Wherein, the planar size of the bonding layer is equal to the planar size of the LED chip.

8. The device according to claim 1 or 7, characterized in that The planar size of the wavelength conversion structure is equal to or larger than the planar size of the LED chip, and equal to or smaller than 1.5 times the planar size of the LED chip.

9. The device according to claim 7, characterized in that The wavelength conversion structure has a third groove, and the third groove is configured to accommodate at least a portion of the bonding layer, or the third groove is configured to accommodate the bonding layer and at least a portion of the LED chip; The side surface of the third groove is vertically or obliquely arranged relative to the top surface of the third groove, and the opening size of the third groove is equal to or larger than the size of the LED chip.

10. A method for preparing a light-emitting device, characterized in that: Used to form the device according to any one of claims 1 to 9; The method comprises: Providing a substrate and an LED structure, wherein the LED structure includes an LED chip and a growth substrate; forming a substrate isolation structure and a plurality of first grooves on one side of the substrate to obtain a driving substrate; electrically connecting the LED structure to at least a portion of the first groove of the driving substrate; removing the growth substrate of the LED structure and retaining the LED chip; Arrange the wavelength conversion structure at least on one side of the LED chip away from the driving substrate; The wavelength conversion structure is arranged in a one-to-one correspondence with the LED chip, and the wavelength conversion structure is configured to emit light with a target wavelength based on excitation by the LED chip.

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