Display mother board and preparation method thereof, display panel and display device

By setting a metal part and a protective layer in the film thickness detection area of ​​the display motherboard and forming a first inorganic film layer, the shortcomings of the existing OLED display products in terms of film thickness detection accuracy and data integrity are solved, and higher film thickness detection data accuracy and protective effect in the preparation process are achieved.

CN119907304APending Publication Date: 2025-04-29合肥维信诺电子有限公司 +1
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Patent Information

Application Number
CN202411659031.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-19
Publication Date
2025-04-29

AI Technical Summary

Technical Problem

The process performance of existing OLED display products needs to be improved, especially in terms of the accuracy of film thickness detection and data integrity.

Method used

The metal portion and the protective layer are provided in the film thickness detection area of ​​the display motherboard, and a first inorganic film layer is formed on the side where the metal layer is away from the substrate substrate, including the film thickness detection part. This method ensures the film forming flatness of the film thickness detection section, thereby improving the data accuracy of film thickness detection.

Benefits of technology

The film forming flatness and data accuracy of the film thickness detection part are improved, damage to the metal part during the preparation process is reduced, and the morphological integrity of the metal part is improved on the surface of the side of the substrate side away from the substrate.

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Abstract

The embodiment of the invention provides a display mother board, a preparation method of the display mother board, a display panel and a display device. The display mother board comprises at least one display panel area and a film thickness detection area located on at least one side of the display panel area, the display panel area comprises a display area and a non-display area, and the preparation method comprises the steps that a driving substrate is provided and comprises a substrate body, the metal layer and the protection layer are sequentially arranged on one side of the substrate in a stacked mode in the direction away from the substrate, the metal layer comprises a metal part located in the film thickness detection area, and the protection layer comprises a protection part located in the film thickness detection area; in the orthographic projection on the substrate, the protection part covers at least one part of the metal part; removing the protection part; a first inorganic film layer is formed on the side, away from the substrate, of the metal layer, the first inorganic film layer comprises a film thickness detection part located in the film thickness detection area, and the film thickness detection part is located on the surface of the side, away from the substrate, of the metal part.
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Description

Technical Field

[0001] The embodiments of the present application relate to the field of display technology, and in particular to a display motherboard and a method for preparing the same, a display panel, and a display device. Background Art

[0002] Organic Light Emitting Diode (OLED) and flat panel display devices based on technologies such as Light Emitting Diode (LED) have been widely used in various consumer electronic products such as mobile phones, televisions, laptops, desktop computers, etc. due to their advantages such as high image quality, power saving, thin body and wide application range, becoming the mainstream in display devices.

[0003] However, the process performance of current OLED display products needs to be improved. Summary of the invention

[0004] In view of this, embodiments of the present application provide a display motherboard and a method for manufacturing the same, a display panel and a display device to at least partially solve the above problems.

[0005] According to a first aspect of an embodiment of the present application, a method for preparing a display motherboard is provided, wherein the display motherboard includes at least one display panel area and a film thickness detection area located on at least one side of the display panel area, wherein the display panel area includes a display area and a non-display area, and the preparation method includes:

[0006] A driving substrate is provided, the driving substrate comprising: a base substrate, and a metal layer and a protective layer sequentially stacked on one side of the base substrate in a direction away from the base substrate, the metal layer comprising a metal portion located in a film thickness detection area, and the protective layer comprising a protective portion located in the film thickness detection area; in an orthographic projection on the base substrate, the protective portion covers at least a portion of the metal portion;

[0007] Remove the protection part;

[0008] A first inorganic film layer is formed on the side of the metal layer away from the base substrate. The first inorganic film layer includes a film thickness detection portion located in the film thickness detection area. The film thickness detection portion is located on the surface of the metal portion away from the base substrate.

[0009] Optionally, the difference between the maximum thickness and the minimum thickness of the film thickness detection portion is greater than or equal to 0, and less than or equal to 6% of the average thickness of the film thickness detection portion; the driving substrate further comprises a pixel definition layer, and the pixel definition layer is arranged on a side of the metal layer away from the base substrate;

[0010] Before removing the protective part, a pixel definition layer is formed; a functional material layer is formed on a side of the pixel definition layer away from the base substrate and on a side of the protective layer away from the base substrate, and the functional material layer on the protective part is removed to obtain a functional film layer; wherein, in an orthographic projection on the base substrate, the functional material layer covers at least the protective part, and the functional film layer has no overlap with the protective part.

[0011] Optionally, when forming the protection layer, the pixel definition layer is formed simultaneously.

[0012] Optionally, the pixel definition layer further includes a defining portion located in the display area, the defining portion is used to enclose and form a pixel opening; the pixel opening includes a first sub-pixel opening, the functional material layer includes a first sub-pixel functional material layer, the functional film layer includes a first sub-pixel functional layer, and the orthographic projection of the first sub-pixel functional material layer on the base substrate also covers the display area;

[0013] The steps of forming a functional material layer on a side of the pixel definition layer away from the base substrate and a side of the protection layer away from the base substrate, and removing the functional material layer on the protection portion to obtain a functional film layer include:

[0014] A first sub-pixel functional material layer is formed on one side of the driving substrate close to the pixel definition layer and the protective layer, and the first sub-pixel functional material layer on the protective portion and part of the first sub-pixel functional material layer located in the display area are removed to obtain a first sub-pixel functional layer, wherein the first sub-pixel functional layer is used to form a plurality of first sub-light-emitting devices, and different first sub-light-emitting devices are located at different first sub-pixel openings.

[0015] Optionally, the pixel opening further includes a second sub-pixel opening, the functional material layer further includes a second sub-pixel functional material layer, the functional film layer further includes a second sub-pixel functional layer, and the orthographic projection of the second sub-pixel functional material layer on the base substrate also covers the display area;

[0016] The step of forming a functional material layer on a side of the pixel definition layer away from the base substrate and a side of the protective layer away from the base substrate, and removing the functional material layer on the protective portion to obtain a functional film layer also includes:

[0017] A second sub-pixel functional material layer is formed on the side of the first sub-pixel functional layer away from the base substrate, and the second sub-pixel functional material layer on the protective portion and part of the second sub-pixel functional material layer located in the display area are removed to obtain a second sub-pixel functional layer, and the second sub-pixel functional layer is used to form a plurality of second sub-light-emitting devices, and different second sub-light-emitting devices are located at different second sub-pixel openings.

[0018] Optionally, the functional material layer further includes a third sub-pixel functional material layer, the functional film layer further includes a third sub-pixel functional layer, and the orthographic projection of the third sub-pixel functional material layer on the base substrate also covers the display area;

[0019] The step of forming a functional material layer on a side of the pixel definition layer away from the base substrate and a side of the protective layer away from the base substrate, and removing the functional material layer on the protective portion to obtain a functional film layer also includes:

[0020] Using a first mask plate, exposing the defined portion, and etching on the defined portion to form a third sub-pixel opening;

[0021] Forming a third sub-pixel functional material layer on a side of the second sub-pixel functional layer away from the substrate, and removing the third sub-pixel functional material layer on the protection portion and a portion of the third sub-pixel functional material layer located in the display area to obtain a third sub-pixel functional layer, wherein the third sub-pixel functional layer is used to form a plurality of third sub-light emitting devices, and different third sub-light emitting devices are located in different third sub-pixel openings;

[0022] The steps of removing the protection part include:

[0023] The second mask is used to expose the protection portion, and the protection portion is removed by etching.

[0024] Optionally, the driving substrate further comprises an isolation structure located on a side of the limiting portion away from the base substrate, the isolation structure encloses a first sub-isolation opening and a second sub-isolation opening, the first sub-isolation opening overlaps with an orthographic projection of the first sub-pixel opening on the base substrate in a one-to-one correspondence, and the second sub-isolation opening overlaps with an orthographic projection of the second sub-pixel opening on the base substrate in a one-to-one correspondence;

[0025] Before the step of using the first mask plate to expose the limited portion, the method further includes:

[0026] A third sub-isolation opening is formed by etching on the isolation structure, and the third sub-isolation opening overlaps with the orthographic projection of the third sub-pixel opening on the substrate in a one-to-one correspondence.

[0027] Optionally, the step of removing the protection portion includes:

[0028] Using the same mask plate, the limited part and the protected part are exposed;

[0029] A third sub-pixel opening is formed on the limiting portion by etching, and the protection portion is removed by etching.

[0030] Optionally, after the step of etching to form a third sub-pixel opening on the defining portion and before the step of forming a first inorganic film layer on a side of the metal layer away from the base substrate, the method further includes:

[0031] A third sub-pixel functional layer is formed on a side of the functional film layer away from the substrate, the third sub-pixel functional layer is used to form a plurality of third sub-light emitting devices, different third sub-light emitting devices are located in different third sub-pixel openings, and the third sub-pixel functional layer has no overlap with the orthographic projection of the metal part on the substrate;

[0032] The step of forming a first inorganic film layer on a side of the metal layer facing away from the substrate includes:

[0033] A first inorganic film layer is formed on a side of the third sub-pixel functional layer facing away from the substrate.

[0034] Optionally, the driving substrate further comprises an isolation structure located on a side of the limiting portion away from the base substrate, the isolation structure encloses and forms an isolation opening, and the isolation opening overlaps with the orthographic projection of the pixel opening on the base substrate in a one-to-one correspondence;

[0035] Before the step of using the same mask plate to expose the limited portion and the protection portion, the method further includes:

[0036] A third sub-isolation opening is formed by etching on the isolation structure, and the third sub-isolation opening overlaps with the orthographic projection of the third sub-pixel opening on the substrate in a one-to-one correspondence.

[0037] Optionally, the step of removing the functional material layer on the protective portion to obtain the functional film layer includes:

[0038] The functional material layer on the protective portion is removed by wet etching and / or dry etching process to obtain a functional film layer.

[0039] Optionally, the first inorganic film layer further includes a touch buffer portion located in the display area, and after the step of forming the first inorganic film layer on a side of the metal layer away from the base substrate, the step further includes:

[0040] A touch electrode layer is formed on the side of the touch buffer portion away from the base substrate. The touch electrode layer includes a plurality of touch electrodes located in the display area. The touch electrode layer and the film thickness detection portion have no overlap in their orthographic projection on the base substrate.

[0041] Optionally, the first inorganic film layer further includes a touch insulating portion located in the display area, and before the step of forming the first inorganic film layer on the side of the metal layer away from the base substrate, the step further includes:

[0042] A first touch electrode layer is formed on a side of the functional film layer away from the base substrate, wherein the first touch electrode layer includes a plurality of first touch electrodes located in the display area, and the first touch electrode layer has no overlap with the orthographic projection of the film thickness detection unit on the base substrate;

[0043] The step of forming a first inorganic film layer on a side of the metal layer facing away from the substrate includes:

[0044] forming a first inorganic film layer on a side of the first touch electrode layer facing away from the base substrate;

[0045] After the step of forming a first inorganic film layer on a side of the first touch electrode layer away from the base substrate, the method further includes:

[0046] A second touch electrode layer is formed on the side of the touch insulating portion away from the base substrate. The second touch electrode layer includes a plurality of second touch electrodes located in the display area. The second touch electrode layer has no overlap with the orthographic projection of the film thickness detection portion on the base substrate.

[0047] Optionally, after forming the functional film layer and before forming the first inorganic film layer, a second encapsulation layer is formed on a side of the functional film layer away from the base substrate, and an orthographic projection of the second encapsulation layer on the base substrate covers the display area;

[0048] Preferably, after the second encapsulation layer is formed, a third encapsulation layer is formed on a side of the second encapsulation layer away from the base substrate, and the orthographic projection of the third encapsulation layer on the base substrate covers the display area.

[0049] Optionally, the non-display area further includes a binding area, the metal layer further includes a conductive portion located in the display panel area, and the conductive portion includes at least one of the following:

[0050] The power cord is located in the display area;

[0051] Data lines located in the display area; and

[0052] A connecting line connecting the display area and the binding area.

[0053] Optionally, the step of providing a driving substrate includes:

[0054] providing a substrate base plate;

[0055] A second inorganic film layer is formed on one side of the base substrate, wherein the second inorganic film layer includes a base portion located in a film thickness detection area, and a metal portion is located on a surface of the base portion that is away from the base substrate.

[0056] According to a second aspect of an embodiment of the present application, a display motherboard is provided. The display motherboard includes at least one display panel area and a film thickness detection area located on at least one side of the display panel area, the display panel area includes a display area and a non-display area, and the display motherboard includes:

[0057] substrate substrate;

[0058] The metal layer is disposed on one side of the substrate and includes a metal portion located in the film thickness detection area;

[0059] A protective layer is disposed on a side of the metal layer away from the substrate; and

[0060] A first inorganic film layer is arranged on a side of the metal layer away from the substrate, the first inorganic film layer comprises a film thickness detection portion located in the film thickness detection area, and the film thickness detection portion is located on a surface of the metal portion away from the substrate;

[0061] The difference between the maximum thickness and the minimum thickness of the film thickness detection portion is greater than or equal to 0 and less than or equal to 6% of the average thickness of the film thickness detection portion.

[0062] According to a third aspect of an embodiment of the present application, a display panel is provided, comprising a display area and a non-display area, the display panel comprising a first inorganic film layer, the difference between the maximum thickness and the minimum thickness of the first inorganic film layer being greater than or equal to 0 and less than or equal to 6% of the average thickness of the first inorganic film layer.

[0063] Optionally, the display panel further includes:

[0064] substrate substrate;

[0065] An isolation structure is located on one side of the substrate, and the isolation structure encloses an isolation opening;

[0066] A touch structure, comprising a first inorganic film layer;

[0067] Preferably, the display panel further comprises a pixel definition layer located between the isolation structure and the base substrate, the pixel definition layer comprises a defining portion located in the display area, the defining portion is used to enclose and form a pixel opening;

[0068] Preferably, the isolation openings overlap with the orthographic projections of the pixel openings on the substrate in a one-to-one correspondence.

[0069] According to a fourth aspect of an embodiment of the present application, a display device is provided, including:

[0070] The display panel as described above; and

[0071] The driving component is connected to the display panel and is used to drive the display panel to display images.

[0072] According to the solution provided by the embodiment of the present application, the protective portion on the metal portion located in the film thickness detection area is first formed and then removed. The protective portion can protect the metal portion to avoid damage to the metal portion during the preparation process, and can improve the morphological integrity of the surface of the metal portion away from the substrate. In addition, since the film thickness detection portion is arranged on the surface of the metal portion away from the substrate, this solution can improve the film flatness of the film thickness detection portion, thereby improving the accuracy of the data of the film thickness detection of the film thickness detection portion. BRIEF DESCRIPTION OF THE DRAWINGS

[0073] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the embodiments of the present application. For ordinary technicians in this field, other drawings can also be obtained based on these drawings.

[0074] Figure 1 It is a cross-sectional structural schematic diagram of a display template in the related art;

[0075] Figure 2 is a schematic diagram of a planar structure of a display motherboard according to an embodiment of the present application;

[0076] Figure 3 is a flowchart of a method for preparing a display motherboard according to an embodiment of the present application;

[0077] Figure 4 is a flowchart of a method for preparing a display motherboard according to an embodiment of the present application;

[0078] Figure 5 is a schematic cross-sectional structure diagram of a driving substrate according to an embodiment of the present application;

[0079] Figure 6 A schematic diagram of a partial preparation process of a display motherboard according to an embodiment of the present application;

[0080] Figure 7 This is a flowchart of an example of a method for preparing a display motherboard according to an embodiment of the present application;

[0081] Figure 8 A schematic diagram of a partial preparation process of a display motherboard according to an embodiment of the present application;

[0082] Fig. 9 This is a flowchart of an example of a method for preparing a display motherboard according to an embodiment of the present application;

[0083] Fig.10 A schematic diagram of a partial preparation process of a display motherboard according to an embodiment of the present application;

[0084] Fig.11 is a schematic cross-sectional structure diagram of a display motherboard according to an embodiment of the present application;

[0085] Fig.12 is a schematic cross-sectional structure diagram of an example of a display motherboard according to an embodiment of the present application;

[0086] Fig.13 is a schematic cross-sectional structure diagram of another display motherboard example according to an embodiment of the present application;

[0087] Fig.14 is a schematic diagram of a planar structure of a display panel according to an embodiment of the present application;

[0088] Fig.15 Schematic diagram of the structure of a display device according to an embodiment of the present application. DETAILED DESCRIPTION

[0089] In order to enable those skilled in the art to better understand the technical solutions in the embodiments of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments in the embodiments of the present application should fall within the scope of protection of the embodiments of the present application.

[0090] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms of "a", "said" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings. It should also be understood that the term "and / or" used in the embodiments of the present application refers to and includes any or all possible combinations of one or more associated listed items.

[0091] It should be understood that in the description of the embodiments of the present application, the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the schemes of the embodiments of the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the embodiments of the present application.

[0092] In addition, when an element or layer is referred to as being “on,” “connected to,” or “coupled to” another element or layer, the element or layer may be directly on, directly connected to, or directly coupled to the other element or layer, or intervening elements or layers may be present. However, when an element or layer is referred to as being “directly on,” “directly connected to,” or “directly coupled to” another element or layer, there are no intervening elements or layers present.

[0093] The terms first, second, etc. are used to describe various elements, components, regions, layers and / or parts, but these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are used to distinguish one element, component, region, layer and / or part from another element, component, region, layer and / or part.

[0094] Unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0095] In the related art, the film thickness detection area in the display motherboard includes a base substrate 10, and a base portion 11, a metal portion 12, and a film thickness detection portion 13 which are sequentially stacked on one side of the base substrate 10 in a direction away from the base substrate 10. When the inventors performed film thickness detection on the film thickness detection portion 13, they found that the film thickness data obtained by the detection was inaccurate.

[0096] In order to solve the above problems, the present application provides a method for preparing a display motherboard, referring to Figure 2 The display motherboard 2 includes at least one display panel area PNL and a film thickness detection area TEG located at at least one side of the display panel area PNL. Figure 2 As shown, the display motherboard may include a plurality of display panel areas PNL, and the film thickness detection area TEG is, for example, located in the peripheral area of ​​the plurality of display panel areas PNL.

[0097] In some embodiments, Figure 2 As shown, the display panel area PNL includes a display area AA and a non-display area NA. The display area AA may include a plurality of sub-pixels.

[0098] For example, Figure 2 and Fig.11 As shown, each sub-pixel includes a sub-pixel opening P and a sub-light-emitting device LD disposed at the sub-pixel opening P. The sub-light-emitting device LD includes, for example, a first electrode E1, a light-emitting portion EM, a second electrode E2, and a first encapsulation portion LDF that are sequentially stacked. Different sub-light-emitting devices LD are located at different sub-pixel openings P. The first electrode E1 is, for example, an anode, and the second electrode E2 is, for example, a cathode. The first encapsulation portions LDF of different sub-light-emitting devices LD can be separated from each other to achieve independent encapsulation of each sub-light-emitting device LD.

[0099] In some embodiments, the plurality of sub-pixels located in the display area AA include a first sub-pixel, a second sub-pixel, and a third sub-pixel having different luminous colors. Fig.11As shown, the first sub-pixel includes a first sub-pixel opening P1 and a first sub-light emitting device LD1 disposed at the first sub-pixel opening P1. The second sub-pixel includes a second sub-pixel opening P2 and a second sub-light emitting device LD2 disposed at the second sub-pixel opening P2. The third sub-pixel includes a third sub-pixel opening P3 and a third sub-light emitting device LD3 disposed at the third sub-pixel opening P3. The light emitting portion EM materials of the first sub-light emitting device LD1, the second sub-light emitting device LD2, and the third sub-light emitting device LD3 are different from each other.

[0100] For example, the first sub-pixel is a blue sub-pixel, the second sub-pixel is a green sub-pixel, and the third sub-pixel is a red sub-pixel. It should be noted that the first sub-pixel can also be a green sub-pixel or a red sub-pixel, the second sub-pixel can also be a red sub-pixel or a blue sub-pixel, and the third sub-pixel can also be a blue sub-pixel or a green sub-pixel. The luminous colors of the first sub-pixel, the second sub-pixel, and the third sub-pixel can be set according to actual conditions and are not specifically limited here.

[0101] Reference Figure 3 The method for preparing the display motherboard provided in the present application includes:

[0102] Provide a drive substrate. Figure 5 As shown, the drive substrate 10 includes: a base substrate 10, and a metal layer M and a protective layer B stacked in sequence on one side of the base substrate in a direction away from the base substrate 10. The metal layer M includes a metal portion 12 located in the film thickness detection area TEG, and the protective layer B includes a protective portion PDL2 located in the film thickness detection area TEG. In the orthographic projection on the base substrate 10, the protective portion PDL2 covers at least a portion of the metal portion 12.

[0103] like Figure 5 As shown, the protection portion PDL2 is located on the side of the metal portion 12 away from the base substrate 10 , and the orthographic projection of the protection portion PDL2 on the base substrate 10 can completely cover the orthographic projection of the metal portion 12 on the base substrate 10 .

[0104] After providing the drive substrate, the protection portion PDL2 is removed.

[0105] Exemplarily, the protection portion PDL2 may be removed by using an etching process, for example, by using a dry etching process.

[0106] After removing the protective portion PDL2, a first inorganic film layer WJ1 is formed on the side of the metal layer M away from the base substrate 10, as shown in FIG. Fig.11 As shown, the first inorganic film layer WJ1 includes a film thickness detection portion 13 located in the film thickness detection region TEG. The film thickness detection portion 13 is located on the surface of the metal portion 12 that is away from the base substrate 10 .

[0107] like Fig.11 As shown, the film thickness detection portion 13 overlaps with the orthographic projection of the metal portion 12 on the base substrate 10 .

[0108] For example, the first inorganic film layer WJ1 can be formed by evaporation processes such as chemical vapor deposition, or by other film forming processes, which are not specifically limited here. The material of the first inorganic film layer WJ1 is, for example, inorganic materials such as silicon nitride, silicon oxide, or silicon oxynitride.

[0109] In the method for preparing the display motherboard provided by the present application, the protective part PDL2 on the metal part 12 of the film thickness detection area TEG is first formed and then removed. The protective part PDL2 can protect the metal part 12 to avoid damage to the metal part 12 during the preparation of the display motherboard, and can improve the morphological integrity of the surface of the metal part 12 on the side away from the base substrate 10. In addition, since the film thickness detection part 13 is arranged on the surface of the metal part 12 on the side away from the base substrate 10, this solution can improve the film flatness of the film thickness detection part 13, thereby improving the accuracy of the data of the film thickness detection part 13. In some examples, the difference between the maximum and minimum thickness of the film thickness detection part 13 is greater than or equal to 0, and is less than or equal to 6% of the average thickness of the film thickness detection part 13.

[0110] In some embodiments, Figure 5 As shown, the driving substrate DP further includes a pixel definition layer PDL, which is disposed on a side of the metal layer M away from the base substrate 10. The pixel definition layer PDL includes a defining portion PDL1 located in the display area AA, and the defining portion PDL1 is used to enclose and form a pixel opening PX. The pixel opening PX includes at least one sub-pixel opening P, for example, at least one of a first sub-pixel opening P1, a second sub-pixel opening P2, and a third sub-pixel opening P3. For example, in Figure 5 In the embodiment, the pixel opening PX includes a first sub-pixel opening P1 and a second sub-pixel opening P2.

[0111] In the method for preparing the display motherboard, a pixel definition layer PDL is formed before removing the protection portion PDL2. A functional material layer 40 (such as Figure 6 ), and removing the functional material layer 40 located on the protection portion PDL2, to obtain a functional film layer 41 (as shown in a in FIG. Figure 6 As shown in b in FIG. 1 ). In the orthographic projection on the base substrate 10 , the functional material layer 40 covers at least a portion of the protection portion PDL2 , and the functional film layer 41 has no overlap with the protection portion PDL2 .

[0112] For example, Figure 6As shown, the orthographic projection of the functional material layer 40 on the base substrate 10 completely covers the orthographic projection of the protective portion PDL2 on the base substrate 10. Furthermore, the orthographic projection of the functional material layer 40 on the base substrate 10 can cover the entire base substrate 10. The specific structure of the functional material layer 40 can be set according to actual conditions and is not specifically limited here.

[0113] For example, the functional material layer 40 may be formed by an evaporation process such as chemical vapor deposition, or by other film forming processes, which are not specifically limited herein.

[0114] Exemplarily, an etching process may be used to remove the functional material layer 40 on the protection part PDL2. For example, a wet etching process may be used to remove the functional material layer 40 on the protection part PDL2, a dry etching process may be used to remove the functional material layer 40 on the protection part PDL2, or a mixed wet and dry etching process may be used to remove the functional material layer 40 on the protection part PDL2. In the etching process, the provision of the protection part PDL2 can protect the metal part 12 and prevent the metal part 12 from being damaged by over-etching.

[0115] In the method for preparing the display motherboard provided in the present application, since the protection part PDL2 on the metal part 12 is removed after the functional film layer 41 is prepared, the protection part PDL2 can protect the metal part 12 during the process of preparing the functional film layer 41, avoiding damage to the metal part 12 during the removal of the functional material layer 40, and improving the morphological integrity of the surface of the metal part 12 facing away from the base substrate 10.

[0116] In some embodiments, when the protection layer PDL2 is formed, the pixel definition layer PDL is formed simultaneously.

[0117] For example, Figure 5 As shown, the protective layer PDL2 and the pixel definition layer PDL are formed simultaneously, and the material of the protective layer PDL2 can be the same as the material of the pixel definition layer PDL. In this way, there is no need to form the protective layer PDL2 first and then form the pixel definition layer PDL. Alternatively, the pixel definition layer PDL is formed first and then the protective layer PDL2 is formed. This can reduce the preparation steps of the display motherboard and improve production efficiency.

[0118] That is to say, referring to Figure 4 The method for preparing the display motherboard provided in the present application includes:

[0119] Step S301: Provide a driving substrate. Figure 5As shown, the driving substrate DP includes: a base substrate 10, and a metal layer M, a protective layer B and a pixel definition layer PDL arranged on one side of the base substrate 10, the metal layer M includes a metal portion 12 located in the film thickness detection area TEG, the pixel definition layer PDL includes a limiting portion PDL1 located in the display area AA, and the protective layer B includes a protective portion PDL2 located in the film thickness detection area TEG. In the orthographic projection on the base substrate 10, the protective portion PDL2 covers at least a portion of the metal portion 12. Along the direction away from the substrate 10, the metal layer M and the protective layer B are stacked in sequence.

[0120] Step S302: forming a functional material layer 40 (eg, a layer of a plurality of layers ... Figure 6 ), and removing the functional material layer 40 located on the protection portion PDL2, to obtain a functional film layer 41 (as shown in a in FIG. Figure 6 (as shown in b in the figure).

[0121] Step S303: removing the protection portion PDL2.

[0122] Step S304: forming a first inorganic film layer WJ1 on the side of the functional film layer 41 away from the base substrate 10, such as Fig.10 As shown, the first inorganic film layer WJ1 includes a film thickness detection portion 13 located in the film thickness detection region TEG. The film thickness detection portion 13 is located on the surface of the metal portion 12 that is away from the base substrate 10 .

[0123] For example, Figure 5 As shown, the driving substrate DP may further include: a first electrode layer E1 L located between the metal layer M and the pixel definition layer PDL, the first electrode layer E1 L including a plurality of first electrodes E1 located at different sub-light emitting devices LD.

[0124] In some embodiments, Figure 8 As shown, the functional film layer 41 may include a sub-pixel functional layer 411 / 412 / 413, and the sub-pixel functional layer 411 / 412 / 413, for example, includes a light-emitting layer EML, a second electrode layer E2L and a first encapsulation layer FZ1 which are sequentially stacked in a direction away from the base substrate 10, the light-emitting layer EML includes a light-emitting portion EM located at different sub-light-emitting devices LD, the second electrode layer E2L includes a plurality of second electrodes E2 located at different sub-light-emitting devices LD, and the first encapsulation layer FZ1 includes a first encapsulation portion LDF located at different sub-light-emitting devices LD.

[0125] In some embodiments, the light-emitting layer EML can be a single-layer structure, for example, it only includes an organic light-emitting material layer. Of course, the present invention is not limited to this. In other embodiments, the light-emitting layer EML can include a multi-layer structure, for example, it can include a hole injection layer, a hole transport layer, an organic light-emitting material layer, an electron transport layer and an electron injection layer stacked between the first electrode E1 and the second electrode E2. The specific structure of the light-emitting layer EML can be selected and set according to actual conditions and is not specifically limited here.

[0126] The material of the first encapsulation layer FZ1 is, for example, an inorganic encapsulation material.

[0127] In some embodiments, Figure 6 As shown, the pixel opening PX includes a first sub-pixel opening P1, the functional material layer 40 includes a first sub-pixel functional material layer 401, the functional film layer 41 includes a first sub-pixel functional layer 411, and the orthographic projection of the first sub-pixel functional material layer 401 on the base substrate 10 also covers the display area AA. Figure 7 , step S302 may include:

[0128] Step S3021: forming a first sub-pixel functional material layer 401 (eg, Figure 6 ), and remove the first sub-pixel functional material layer 401 on the protection portion PDL2 and a portion of the first sub-pixel functional material layer 401 located in the display area AA to obtain a first sub-pixel functional layer 411, as shown in FIG. Figure 6 As shown in b, the first sub-pixel function layer 411 is used to form a plurality of first sub-light emitting devices LD1, and different first sub-light emitting devices LD1 are located at different first sub-pixel openings P1.

[0129] In this embodiment, the protection portion PDL2 can protect the metal portion 12 during the process of preparing the first sub-pixel functional layer 411 , thereby preventing the metal portion 12 from being damaged during the process of removing the first sub-pixel functional material layer 401 .

[0130] Exemplarily, a first light-emitting material layer EMM, a second electrode material layer E2M and a first packaging material layer FZM can be formed in sequence on the side of the driving substrate DP close to the pixel definition layer PDL and the protective layer B, that is, a first sub-pixel functional material layer 401 is formed, and then an etching process (such as dry etching) can be used to remove the first packaging material layer FZM located outside the first sub-pixel opening P1 to obtain the first packaging layer FZ1 of the first sub-pixel functional layer 411; and then an etching process (such as wet etching) can be used to sequentially remove the second electrode material layer E2M located outside the first sub-pixel opening P1 and the first light-emitting material layer EMM located outside the first sub-pixel opening P1 to obtain the second electrode layer E2L and the light-emitting layer EML of the first sub-pixel functional layer 411. Among them, the light-emitting layer EML of the first sub-pixel functional layer 411 includes multiple light-emitting parts EM located at different first sub-pixel openings P1, the second electrode layer E2L of the first sub-pixel functional layer 411 includes multiple second electrodes E2 located at different first sub-pixel openings P1, and the first encapsulation layer FZ1 of the first sub-pixel functional layer 411 includes multiple first encapsulation parts LDF located at different first sub-pixel openings P1.

[0131] In some embodiments, Figure 6 As shown, the pixel opening PX further includes a second sub-pixel opening P2, the functional material layer 40 further includes a second sub-pixel functional material layer, the functional film layer 41 further includes a second sub-pixel functional layer 412, and the orthographic projection of the second sub-pixel functional material layer on the base substrate 10 also covers the display area AA. Figure 7 , step S302 may further include:

[0132] Step S3022: forming a second sub-pixel functional material layer on the side of the first sub-pixel functional layer 411 away from the base substrate 10, and removing the second sub-pixel functional material layer on the protection portion PDL2 and a portion of the second sub-pixel functional material layer located in the display area AA to obtain a second sub-pixel functional layer 412, such as Figure 6 As shown in c, the second sub-pixel function layer 412 is used to form a plurality of second sub-light emitting devices LD2, and different second sub-light emitting devices LD2 are located at different second sub-pixel openings P2.

[0133] In this embodiment, during the process of preparing the second sub-pixel functional layer 412 , the protection portion PDL2 can protect the metal portion 12 , thereby preventing the metal portion 12 from being damaged during the process of removing the second sub-pixel functional material layer.

[0134] Exemplarily, the preparation process of the second sub-pixel functional layer 412 is similar to that of the first sub-pixel functional layer 411. A second light-emitting material layer, a second electrode material layer and a first packaging material layer can be formed in sequence on the side of the first sub-pixel functional layer 411 away from the base substrate 10, that is, a second sub-pixel functional material layer is formed. Then, an etching process (such as dry etching) can be used to remove the first packaging material layer outside the second sub-pixel opening P2 to obtain the first packaging layer FZ1 of the second sub-pixel functional layer 412; then, an etching process (such as wet etching) can be used to sequentially remove the second electrode material layer outside the second sub-pixel opening P2 and the second light-emitting material layer outside the second sub-pixel opening P2 to obtain the second electrode layer E2L and the light-emitting layer EML of the second sub-pixel functional layer 412. Among them, the light-emitting layer EML of the second sub-pixel functional layer 412 includes multiple light-emitting parts EM located at different second sub-pixel openings P2, the second electrode layer E2L of the second sub-pixel functional layer 412 includes multiple second electrodes E2 located at different second sub-pixel openings P2, and the first encapsulation layer FZ1 of the second sub-pixel functional layer 412 includes multiple first encapsulation parts LDF located at different second sub-pixel openings P2.

[0135] In some embodiments, the functional material layer 40 further includes a third sub-pixel functional material layer, the functional film layer 41 further includes a third sub-pixel functional layer, and the orthographic projection of the third sub-pixel functional material layer on the base substrate 10 also covers the display area AA. Figure 7 , step S302 may further include:

[0136] Step S3023: using the first mask plate, exposing the defined portion PDL1, and etching the defined portion PDL1 to form a third sub-pixel opening P3, the resulting display motherboard is as follows: Figure 8 As shown in a in .

[0137] Step S3024: forming a third sub-pixel functional material layer on the side of the second sub-pixel functional layer 412 away from the base substrate 10, and removing the third sub-pixel functional material layer on the protection portion PDL2 and a portion of the third sub-pixel functional material layer located in the display area AA to obtain a third sub-pixel functional layer 413, such as Figure 8 As shown in b, the third sub-pixel function layer 413 is used to form a plurality of third sub-light emitting devices LD3, and different third sub-light emitting devices LD3 are located at different third sub-pixel openings P3.

[0138] In this embodiment, during the process of preparing the third sub-pixel functional layer 413 , the protection portion PDL2 can protect the metal portion 12 , thereby preventing the metal portion 12 from being damaged during the process of removing the third sub-pixel functional material layer.

[0139] Exemplarily, the preparation process of the third sub-pixel functional layer 413 is similar to that of the first sub-pixel functional layer 411. A third light-emitting material layer, a second electrode material layer and a first packaging material layer can be formed in sequence on the side of the second sub-pixel functional layer 412 away from the base substrate 10, that is, a third sub-pixel functional material layer is formed. Then, an etching process (such as dry etching) can be used to remove the first packaging material layer outside the third sub-pixel opening P3 to obtain the first packaging layer FZ1 of the third sub-pixel functional layer 413; then, an etching process (such as wet etching) can be used to sequentially remove the second electrode material layer outside the third sub-pixel opening P3 and the third light-emitting material layer outside the third sub-pixel opening P3 to obtain the second electrode layer E2L and the light-emitting layer EML of the third sub-pixel functional layer 413. Among them, the light-emitting layer EML of the third sub-pixel functional layer 413 includes a plurality of light-emitting parts EM located at different third sub-pixel openings P3, the second electrode layer E2L of the third sub-pixel functional layer 413 includes a plurality of second electrodes E2 located at different third sub-pixel openings P3, and the first encapsulation layer FZ1 of the third sub-pixel functional layer 413 includes a plurality of first encapsulation parts LDF located at different third sub-pixel openings P3.

[0140] In some embodiments, after completing step S3024, step S303 is performed.

[0141] Since the preparation of the first sub-pixel functional layer 411, the second sub-pixel functional layer 412 and the third sub-pixel functional layer 413 all involve wet etching processes, the protection part PDL2 is removed after the preparation of the first sub-pixel functional layer 411, the second sub-pixel functional layer 412 and the third sub-pixel functional layer 413 is completed. In this way, the protection part PDL2 can protect the metal part 12, prevent the etching solution from entering the metal part 12 and corroding it, and reduce large-area damage to the metal part 12.

[0142] Accordingly, refer to Figure 7 , step S303 may include:

[0143] Step S3030: Use a second mask plate to expose the protection portion PDL2, and etch away the protection portion PDL2. The resulting display motherboard is as shown in FIG. Figure 8 Then, a first inorganic film layer WJ1 is formed on the side of the third sub-pixel functional layer 413 away from the base substrate 10, and the following can be obtained: Fig.11 The display motherboard is shown.

[0144] By adding a new mask plate, namely the second mask plate, the protection part PDL2 is exposed and etched after the first sub-pixel function layer 411, the second sub-pixel function layer 412 and the third sub-pixel function layer 413 are prepared, which can reduce the damage to the metal part 12 to a greater extent.

[0145] In some examples, such as Figure 5 As shown, the driving substrate DP may further include: an isolation structure GL located on the side of the limiting portion PDL1 away from the base substrate 10 , the isolation structure GL encloses an isolation opening H1 , and the isolation opening H1 overlaps with the orthographic projection of the pixel opening PX on the base substrate 10 in a one-to-one correspondence.

[0146] When the light-emitting layer EML and the second electrode layer E2L are formed by evaporation, the light-emitting layer EML and the second electrode layer E2L can be naturally disconnected at the edge of the isolation structure GL, so that the isolation structure GL can replace the fine metal mask (FMM) to achieve patterning of the light-emitting layer EML and the second electrode layer E2L.

[0147] In some embodiments, Figure 5 As shown, the isolation opening H1 includes a first sub-isolation opening H11 and a second sub-isolation opening H12. The first sub-isolation opening H11 overlaps with the orthographic projection of the first sub-pixel opening P1 on the base substrate 10 in a one-to-one correspondence, and the second sub-isolation opening H12 overlaps with the orthographic projection of the second sub-pixel opening P2 on the base substrate 10 in a one-to-one correspondence.

[0148] Accordingly, before step S3023, step S302 may further include:

[0149] Step S3025: etching to form a third sub-isolation opening H2 on the isolation structure GL, such as Figure 8 As shown, the orthographic projections of the third sub-isolating opening H2 and the third sub-pixel opening P3 on the base substrate 10 overlap one by one. Step S3025 may be completed, for example, after step S3022 and before step S3023.

[0150] In other embodiments, reference Fig. 9 , step S303 may include:

[0151] Step S3031: using the same mask plate to expose the limiting portion PDL1 and the protection portion PDL2.

[0152] Step S3032: etching to form a third sub-pixel opening P3 on the limiting portion PDL1, and etching to remove the protection portion PDL2, and the resulting display motherboard is as follows: Fig.10 As shown in a in .

[0153] In this embodiment, the same mask is used for forming the third sub-pixel opening P3 on the defining portion PDL1 and removing the protecting portion PDL2 , which simplifies the process steps and eliminates the need for adding a mask to remove the protecting portion PDL2 , thereby reducing costs.

[0154] Step S3032 may further include: using the same etching process to form a third sub-pixel opening P3 on the defining portion PDL1 by etching, and to remove the protecting portion PDL2 by etching, which may further simplify the process steps and reduce the cost.

[0155] For example, Fig. 9 As shown, step S3031 and step S3032 can be performed sequentially after step S3021 and step S3022. In this way, during the process of preparing the first sub-pixel function layer 411 in step S3021 and preparing the second sub-pixel function layer 412 in step S3022, the protection portion PDL2 can protect the metal portion 12 and reduce damage to the metal portion 12.

[0156] In some embodiments, before step S3031, the following steps may also be included:

[0157] Step S3033: etching to form a third sub-isolation opening H2 on the isolation structure GL, such as Fig.10 As shown, the orthographic projections of the third sub-isolating opening H2 and the third sub-pixel opening P3 on the base substrate 10 overlap one by one. Step S3033 may be performed, for example, after step S3022 and before step S3031.

[0158] Accordingly, refer to Fig. 9 After forming the third sub-pixel opening P3 in step S3032 and before step S304, the method may further include:

[0159] Step S305: forming a third sub-pixel functional layer 413 on the side of the functional film layer 41 away from the base substrate 10, such as Fig.10 As shown in b, the third sub-pixel functional layer 413 is used to form multiple third sub-light-emitting devices LD3, different third sub-light-emitting devices LD3 are located at different third sub-pixel openings P3, and the third sub-pixel functional layer 413 has no overlap with the orthographic projection of the metal part 12 on the base substrate 10.

[0160] Accordingly, step S304 may specifically include: forming a first inorganic film layer WJ1 on the side of the third sub-pixel functional layer 413 away from the base substrate 10, and the following may be obtained: Fig.11 The display motherboard is shown.

[0161] In some embodiments, Fig.12 As shown, the first inorganic film layer WJ1 further includes a touch buffer portion BF located in the display area AA, and after step S304, may further include:

[0162] Step S306: forming a touch electrode TE layer on the side of the touch buffer portion BF away from the base substrate 10, such as Fig.12As shown, the touch electrode TE layer includes a plurality of touch electrodes TE located in the display area AA, and the touch electrode TE layer has no overlap with the orthographic projection of the film thickness detection unit 13 on the base substrate 10. The touch electrode TE is used to realize the touch function in the display area AA.

[0163] In some embodiments, Fig.13 As shown, the first inorganic film layer WJ1 further includes a touch insulating portion JY located in the display area AA, and before step S304, may further include:

[0164] Step S307: forming a first touch electrode TE1 layer on the side of the functional film layer 41 away from the base substrate 10, such as Fig.13 As shown, the first touch electrode TE1 layer includes a plurality of first touch electrodes TE1 located in the display area AA, and the first touch electrode TE1 layer has no overlap with the orthographic projection of the film thickness detection unit 13 on the base substrate 10 .

[0165] Accordingly, step S304 may specifically include: forming a first inorganic film layer WJ1 on a side of the first touch electrode TE1 layer facing away from the base substrate 10 .

[0166] After step S304, the following steps may also be included:

[0167] Step S308: forming a second touch electrode TE2 layer on the side of the touch insulating portion JY away from the base substrate 10, such as Fig.13 As shown, the second touch electrode TE2 layer includes a plurality of second touch electrodes TE2 located in the display area AA, and the second touch electrode TE2 layer has no overlap with the orthographic projection of the film thickness detection unit 13 on the base substrate 10 .

[0168] The first touch electrode TE1 and the second touch electrode TE2 are used to implement a touch function in the display area AA.

[0169] Exemplarily, step S307 may be performed after the preparation of the third sub-pixel functional layer 413 is completed. Accordingly, step S307 specifically includes: forming a first touch electrode TE1 layer on a side of the third sub-pixel functional layer 413 facing away from the base substrate 10 .

[0170] Exemplarily, the non-display area NA further includes a binding area.

[0171] In some embodiments, Fig.11As shown, the metal layer M further includes a conductive portion DD located in the display panel area PNL, and the conductive portion DD includes at least one of the following: a power line located in the display area AA, a data line located in the display area AA, and a connection line connected between the display area AA and the binding area. The power line is used to transmit a power signal, the data line is used to transmit a display signal, and the connection line is, for example, located in the bendable area, and the bendable area is located between the display area AA and the binding area.

[0172] In some embodiments, step S301 may include:

[0173] Step S3011: providing a base substrate 10.

[0174] Step S3012: forming a second inorganic film layer WJ2 on one side of the base substrate 10, such as Fig.11 As shown, the second inorganic film layer WJ2 includes a base portion 11 located in the film thickness detection region TEG, and a metal portion 12 is located on a surface of the base portion 11 that is away from the base substrate 10 .

[0175] Among them, the second inorganic film layer WJ2 includes a gate insulating layer GI, an intrinsic insulating layer CI and an interlayer dielectric layer I LD which are stacked in sequence.

[0176] The base 11 can improve the adhesion of the metal part 12. In addition, by providing the metal part 12 between the base 11 and the film thickness detection part 13, the base 11 and the film thickness detection part 13 can be isolated to avoid mixing of the materials of the base 11 and the film thickness detection part 13 at the interface. The provision of the metal part 12 is conducive to improving the accuracy of film thickness detection.

[0177] Exemplarily, the metal layer M includes a first sub-metal layer, a second sub-metal layer, and a third sub-metal layer that are stacked, wherein the first sub-metal layer is closer to the base portion 11 than the third sub-metal layer. At this time, the metal portion 12 includes a first sub-metal layer, a second sub-metal layer, and a third sub-metal layer, and in a direction away from the base portion 11, the base portion 11, the first sub-metal layer, the second sub-metal layer, the third sub-metal layer, and the film thickness detection portion 13 are stacked in sequence. The material of the first sub-metal layer can be the same as that of the third sub-metal layer, the material of the first sub-metal layer is different from that of the second sub-metal layer, and the material of the second sub-metal layer is different from that of the third sub-metal layer. Exemplarily, the first sub-metal layer is a titanium layer, the second sub-metal layer is an aluminum layer, and the third sub-metal layer is a titanium layer.

[0178] The present application also provides a display motherboard, such as Figure 2 As shown, the display motherboard includes at least one display panel area PNL and a film thickness detection area TEG located at at least one side of the display panel area PNL. The display panel area PNL includes a display area AA and a non-display area NA.

[0179] like Fig.11 As shown, the display motherboard includes: a base substrate 10; a metal layer M, which is arranged on one side of the base substrate 10, including a metal part 12 located in the film thickness detection area TEG, and a first inorganic film layer WJ1 arranged on the side of the metal layer M away from the base substrate 10, including a film thickness detection part 13 located in the film thickness detection area TEG. The film thickness detection part 13 is located on the surface of the metal part 12 away from the base substrate 10. The difference between the maximum and minimum thickness of the film thickness detection part 13 is greater than or equal to 0, and less than or equal to 6% of the average thickness of the film thickness detection part 13.

[0180] Optionally, the display motherboard provided in this embodiment can be prepared by the preparation method described in any of the previous embodiments.

[0181] Exemplarily, the maximum and minimum thickness of the film thickness detection portion 13 are equal to 0. The thickness of the film thickness detection portion 13 is equal everywhere.

[0182] Exemplarily, the difference between the maximum thickness and the minimum thickness of the film thickness detection portion 13 is greater than 0 and is less than or equal to 6% of the average thickness of the film thickness detection portion 13 .

[0183] In some embodiments, the display motherboard also includes a pixel definition layer PDL, which is arranged on the side of the metal layer M away from the base substrate 10, including a limiting portion PDL1 located in the display area AA, the limiting portion PDL1 is used to enclose and form a sub-pixel opening P, and the limiting portion PDL1 has no overlap with the orthographic projection of the metal portion 12 on the base substrate 10; a functional film layer 41 is arranged on the side of the pixel definition layer PDL away from the base substrate 10, and the functional film layer 41 has no overlap with the orthographic projection of the metal portion 12 on the base substrate 10.

[0184] For example, Fig.11 As shown, the sub-pixel openings P include a first sub-pixel opening P1, a second sub-pixel opening P2, and a third sub-pixel opening P3. The first sub-pixel opening P1 is used to set the first sub-light emitting device LD1, the second sub-pixel opening P2 is used to set the second sub-light emitting device LD2, and the third sub-pixel opening P3 is used to set the third sub-light emitting device LD3.

[0185] For example, Fig.11 As shown, the functional film layer 41 may include a sub-pixel functional layer 411 / 412 / 413, and the sub-pixel functional layer 411 / 412 / 413, for example, includes a light-emitting layer EML, a second electrode layer E2L and a first encapsulation layer FZ1 which are sequentially stacked in a direction away from the base substrate 10, the light-emitting layer EML includes a light-emitting portion EM located at different sub-light-emitting devices LD, the second electrode layer E2L includes a plurality of second electrodes E2 located at different sub-light-emitting devices LD, and the first encapsulation layer FZ1 includes a first encapsulation portion LDF located at different sub-light-emitting devices LD.

[0186] For example, Fig.11 As shown, the functional film layer 41 may include a first sub-pixel functional layer 411 , may further include a second sub-pixel functional layer 412 , and may further include a third sub-pixel functional layer 413 .

[0187] In some embodiments, the display motherboard further includes a conductive portion DD located in the display panel area PNL. Exemplarily, the conductive portion DD includes at least one of the following: a power line located in the display area AA, a data line located in the display area AA, and a connection line connected between the display area AA and the binding area. The power line is used to transmit a power signal, the data line is used to transmit a display signal, and the connection line is, for example, located in the bendable area, and the bendable area is located between the display area AA and the binding area.

[0188] In some embodiments, Fig.11 As shown, the display motherboard may further include: at least one second encapsulation layer FZ2 located on the side of the functional film layer 41 (such as the third sub-pixel functional layer 413) away from the base substrate 10, and the orthographic projection of the second encapsulation layer FZ2 on the base substrate 10 completely covers the display area AA. The material of the second encapsulation layer FZ2 is, for example, an organic encapsulation material or an inorganic encapsulation material. The second encapsulation layer FZ2 can prevent water vapor from entering the driving substrate DP, and play a protective role.

[0189] In some embodiments, after forming the second encapsulation layer FZ2, a third encapsulation layer is formed on the side of the second encapsulation layer FZ2 away from the base substrate 10, and the orthographic projection of the third encapsulation layer on the base substrate 10 covers the display area AA. The material of the third encapsulation layer is, for example, an organic encapsulation material or an inorganic encapsulation material. The third encapsulation layer can further prevent water vapor from entering the driving substrate DP.

[0190] In some embodiments, Fig.12 As shown, the display motherboard may further include: a touch layer located on the side of the second packaging material layer away from the base substrate 10, the touch layer, for example, includes a touch buffer layer 111 and a touch electrode TE layer stacked in sequence, the touch electrode TE layer is located on the side of the touch buffer layer 111 away from the base substrate 10. The touch electrode TE layer includes a plurality of touch electrodes TE located in the display area AA, and the touch electrode TE layer has no overlap with the orthographic projection of the film thickness detection unit 13 on the base substrate 10. The touch electrode TE is used to realize the touch function in the display area AA.

[0191] For example, Fig.12 As shown, the first inorganic film layer WJ1 is a touch buffer layer 111 , which includes a touch buffer portion BF located in the display area AA and a film thickness detection portion 13 located in the film thickness detection area TEG. The touch electrode TE layer is arranged on the surface of the touch buffer portion BF away from the base substrate 10 .

[0192] In other embodiments, Fig.13 As shown, the touch electrode TE layer includes a first touch electrode TE1 layer, a touch insulating layer 121 and a second touch electrode TE2 layer which are stacked in sequence, and the first touch electrode TE1 layer is arranged close to the touch buffer layer 111. Among them, the first touch electrode TE1 layer includes a plurality of first touch electrodes TE1 located in the display area AA, and the first touch electrode TE1 layer has no overlap with the orthographic projection of the film thickness detection unit 13 on the base substrate 10. The second touch electrode TE2 layer includes a plurality of second touch electrodes TE2 located in the display area AA, and the second touch electrode TE2 layer has no overlap with the orthographic projection of the film thickness detection unit 13 on the base substrate 10. The first touch electrode TE1 and the second touch electrode TE2 are used to realize the touch function in the display area AA.

[0193] For example, Fig.13 As shown, the first inorganic film layer WJ1 is a touch insulating layer 121, which includes a touch insulating portion JY located in the display area AA and a film thickness detection portion 13 located in the film thickness detection area TEG, and a first touch electrode TE1 layer and a second touch electrode TE2 layer are stacked on both sides of the touch insulating portion JY.

[0194] The present application also provides a display panel PNL, such as Fig.14 As shown, optionally, the display panel PNL is cut from a display motherboard, wherein the display motherboard is the display motherboard as described in any of the previous embodiments, or the display panel PNL is prepared by the preparation method of the display motherboard as described in any of the previous embodiments.

[0195] In some embodiments, the display panel PNL includes a display area and a non-display area, and the display panel includes a first inorganic film layer. The difference between the maximum and minimum thickness of the first inorganic film layer is greater than or equal to 0 and less than or equal to 6% of the average thickness of the first inorganic film layer.

[0196] In some embodiments, the display panel PNL further includes a base substrate; an isolation structure located on one side of the base substrate, the isolation structure enclosing an isolation opening; and a touch structure including the first inorganic film layer.

[0197] In some embodiments, the display panel PNL further includes a pixel definition layer located between the isolation structure and the base substrate, the pixel definition layer includes a defining portion located in the display area, the defining portion is used to enclose and form a pixel opening;

[0198] In some embodiments, the isolation opening overlaps with the orthographic projections of the pixel opening on the substrate in a one-to-one correspondence.

[0199] The present application also provides a display device, such as Fig.15As shown, the display device includes a display panel PNL and a driving component 141, wherein the driving component 141 is connected to the display panel PNL and is used to drive the display panel PNL to display images. The display panel PNL is the display panel PNL as described in any of the previous embodiments.

[0200] Exemplarily, the driving component 141 is connected to the binding area of ​​the display panel PNL, and the driving component 141 is used to drive the display panel PNL to display a static picture or a dynamic picture.

[0201] Exemplarily, the above-mentioned display device can be implemented as any product or component with display function, such as a display module, a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, a car display device, a smart watch, a fitness wristband, a personal digital assistant, etc.

[0202] The above implementation methods are only used to illustrate the embodiments of the present application, and are not limitations on the embodiments of the present application. Ordinary technicians in the relevant technical field can make various changes and modifications without departing from the spirit and scope of the embodiments of the present application. Therefore, all equivalent technical solutions also belong to the scope of the embodiments of the present application. The scope of patent protection of the embodiments of the present application should be limited by the claims.

Claims

1. A method for preparing a display motherboard, characterized in that: The display motherboard includes at least one display panel area and a film thickness detection area located on at least one side of the display panel area, the display panel area includes a display area and a non-display area, and the preparation method includes: A driving substrate is provided, the driving substrate comprising: a base substrate, and a metal layer and a protective layer sequentially stacked on one side of the base substrate in a direction away from the base substrate, the metal layer comprising a metal portion located in the film thickness detection area, the protective layer comprising a protective portion located in the film thickness detection area; in an orthographic projection on the base substrate, the protective portion covers at least a portion of the metal portion; removing the protection portion; A first inorganic film layer is formed on the side of the metal layer away from the base substrate, the first inorganic film layer includes a film thickness detection portion located in the film thickness detection area, and the film thickness detection portion is located on the surface of the metal portion away from the base substrate.

2. The preparation method according to claim 1, characterized in that: The difference between the maximum and minimum thickness of the film thickness detection portion is greater than or equal to 0, and less than or equal to 6% of the average thickness of the film thickness detection portion; the drive substrate further includes a pixel definition layer, and the pixel definition layer is arranged on a side of the metal layer away from the base substrate; Before removing the protection portion, forming the pixel definition layer; A functional material layer is formed on a side of the pixel definition layer away from the base substrate and on a side of the protective layer away from the base substrate, and the functional material layer on the protective portion is removed to obtain a functional film layer; wherein, in an orthographic projection on the base substrate, the functional material layer covers at least a portion of the protective portion, and the functional film layer has no overlap with the protective portion.

3. The preparation method according to claim 2, characterized in that: When the protection layer is formed, the pixel definition layer is formed simultaneously.

4. The preparation method according to claim 3, characterized in that: The pixel definition layer further includes a defining portion located in the display area, the defining portion is used to enclose and form a pixel opening; the pixel opening includes a first sub-pixel opening, the functional material layer includes a first sub-pixel functional material layer, the functional film layer includes a first sub-pixel functional layer, and the orthographic projection of the first sub-pixel functional material layer on the base substrate also covers the display area; The step of forming a functional material layer on a side of the pixel definition layer away from the base substrate and a side of the protection layer away from the base substrate, and removing the functional material layer on the protection portion to obtain a functional film layer comprises: The first sub-pixel functional material layer is formed on one side of the driving substrate close to the pixel definition layer and the protective layer, and the first sub-pixel functional material layer on the protective portion and part of the first sub-pixel functional material layer located in the display area are removed to obtain the first sub-pixel functional layer, and the first sub-pixel functional layer is used to form a plurality of first sub-light-emitting devices, and different first sub-light-emitting devices are located at different first sub-pixel openings.

5. The preparation method according to claim 4, characterized in that: The pixel opening further includes a second sub-pixel opening, the functional material layer further includes a second sub-pixel functional material layer, the functional film layer further includes a second sub-pixel functional layer, and the orthographic projection of the second sub-pixel functional material layer on the base substrate also covers the display area; The step of forming a functional material layer on a side of the pixel definition layer away from the base substrate and a side of the protection layer away from the base substrate, and removing the functional material layer on the protection portion to obtain a functional film layer also includes: The second sub-pixel functional material layer is formed on the side of the first sub-pixel functional layer away from the base substrate, and the second sub-pixel functional material layer on the protective portion and part of the second sub-pixel functional material layer located in the display area are removed to obtain the second sub-pixel functional layer, and the second sub-pixel functional layer is used to form a plurality of second sub-light-emitting devices, and different second sub-light-emitting devices are located at different second sub-pixel openings.

6. The preparation method according to claim 5, characterized in that: The functional material layer further includes a third sub-pixel functional material layer, the functional film layer further includes a third sub-pixel functional layer, and the orthographic projection of the third sub-pixel functional material layer on the base substrate also covers the display area; The step of forming a functional material layer on a side of the pixel definition layer away from the base substrate and a side of the protection layer away from the base substrate, and removing the functional material layer on the protection portion to obtain a functional film layer also includes: Using a first mask plate, exposing the defined portion, and etching the defined portion to form a third sub-pixel opening; Forming the third sub-pixel functional material layer on the side of the second sub-pixel functional layer away from the base substrate, and removing the third sub-pixel functional material layer on the protection portion and a portion of the third sub-pixel functional material layer located in the display area to obtain the third sub-pixel functional layer, wherein the third sub-pixel functional layer is used to form a plurality of third sub-light-emitting devices, and different third sub-light-emitting devices are located in different third sub-pixel openings; The step of removing the protection portion comprises: The protection portion is exposed using a second mask plate, and then the protection portion is removed by etching.

7. The preparation method according to claim 6, characterized in that: The driving substrate further comprises an isolation structure located on a side of the limiting portion away from the base substrate, the isolation structure encloses a first sub-isolation opening and a second sub-isolation opening, the first sub-isolation opening overlaps with an orthographic projection of the first sub-pixel opening on the base substrate in a one-to-one correspondence, and the second sub-isolation opening overlaps with an orthographic projection of the second sub-pixel opening on the base substrate in a one-to-one correspondence; Before the step of using the first mask plate to expose the defined portion, the method further includes: A third sub-isolation opening is formed by etching on the isolation structure, and the third sub-isolation opening overlaps with the orthographic projection of the third sub-pixel opening on the substrate in a one-to-one correspondence.

8. The preparation method according to claim 3, characterized in that: The step of removing the protection portion comprises: Using the same mask plate to expose the limiting portion and the protection portion; A third sub-pixel opening is formed on the limiting portion by etching, and the protection portion is removed by etching.

9. The preparation method according to claim 8, characterized in that: After the step of etching to form a third sub-pixel opening on the defining portion and before the step of forming a first inorganic film layer on a side of the metal layer away from the base substrate, the method further includes: A third sub-pixel functional layer is formed on a side of the functional film layer away from the base substrate, the third sub-pixel functional layer is used to form a plurality of third sub-light emitting devices, different third sub-light emitting devices are located at different third sub-pixel openings, and the third sub-pixel functional layer has no overlap with the orthographic projection of the metal part on the base substrate; The step of forming a first inorganic film layer on a side of the metal layer away from the base substrate comprises: A first inorganic film layer is formed on a side of the third sub-pixel functional layer away from the base substrate.

10. The preparation method according to claim 8, characterized in that: The driving substrate further comprises an isolation structure located on a side of the limiting portion away from the base substrate, the isolation structure encloses an isolation opening, and the isolation opening overlaps with an orthographic projection of the pixel opening on the base substrate in a one-to-one correspondence; Before the step of using the same mask plate to expose the limiting portion and the protection portion, the method further includes: A third sub-isolation opening is formed by etching on the isolation structure, and the third sub-isolation opening overlaps with the orthographic projection of the third sub-pixel opening on the substrate in a one-to-one correspondence.

11. The preparation method according to any one of claims 3 to 10, characterized in that: The step of removing the functional material layer on the protective portion to obtain the functional film layer comprises: The functional material layer on the protection portion is removed by wet etching and / or dry etching process to obtain a functional film layer.

12. The preparation method according to any one of claims 3 to 10, characterized in that: The first inorganic film layer further includes a touch buffer portion located in the display area, and after the step of forming the first inorganic film layer on a side of the metal layer away from the base substrate, the method further includes: A touch electrode layer is formed on a side of the touch buffer portion away from the base substrate. The touch electrode layer includes a plurality of touch electrodes located in the display area. The touch electrode layer has no overlap with the orthographic projection of the film thickness detection portion on the base substrate.

13. The preparation method according to any one of claims 3 to 10, characterized in that: The first inorganic film layer further includes a touch insulating portion located in the display area, and before the step of forming the first inorganic film layer on a side of the metal layer away from the base substrate, the step further includes: forming a first touch electrode layer on a side of the functional film layer away from the base substrate, wherein the first touch electrode layer comprises a plurality of first touch electrodes located in the display area, and the first touch electrode layer has no overlap with the orthographic projection of the film thickness detection unit on the base substrate; The step of forming a first inorganic film layer on a side of the metal layer away from the base substrate comprises: forming the first inorganic film layer on a side of the first touch electrode layer away from the base substrate; After the step of forming the first inorganic film layer on the side of the first touch electrode layer away from the base substrate, the method further includes: A second touch electrode layer is formed on a side of the touch insulating portion away from the base substrate, the second touch electrode layer includes a plurality of second touch electrodes located in the display area, and the second touch electrode layer has no overlap with the orthographic projection of the film thickness detection portion on the base substrate.

14. The preparation method according to claim 12 or 13, characterized in that: After forming the functional film layer and before forming the first inorganic film layer, forming a second encapsulation layer on a side of the functional film layer away from the base substrate, wherein the orthographic projection of the second encapsulation layer on the base substrate covers the display area; Preferably, after the second encapsulation layer is formed, a third encapsulation layer is formed on a side of the second encapsulation layer away from the base substrate, and an orthographic projection of the third encapsulation layer on the base substrate covers the display area.

15. The preparation method according to any one of claims 3 to 10, characterized in that: The non-display area further includes a binding area, the metal layer further includes a conductive portion located in the display panel area, and the conductive portion includes at least one of the following: A power line located in the display area; A data line located in the display area; and A connecting line is connected between the display area and the binding area.

16. The preparation method according to any one of claims 3 to 10, characterized in that: The step of providing a driving substrate comprises: providing a substrate base plate; A second inorganic film layer is formed on one side of the base substrate, wherein the second inorganic film layer includes a base portion located in the film thickness detection area, and the metal portion is located on a surface of the base portion that is away from the base substrate.

17. A display motherboard, characterized in that: The display motherboard includes at least one display panel area and a film thickness detection area located at at least one side of the display panel area, wherein the display panel area includes a display area and a non-display area, and the display motherboard includes: substrate substrate; A metal layer, disposed on one side of the base substrate, including a metal portion located in the film thickness detection area; as well as A first inorganic film layer is arranged on a side of the metal layer away from the base substrate, the first inorganic film layer comprises a film thickness detection portion located in the film thickness detection area, and the film thickness detection portion is located on a surface of the metal portion away from the base substrate; The difference between the maximum thickness and the minimum thickness of the film thickness detection portion is greater than or equal to 0 and less than or equal to 6% of the average thickness of the film thickness detection portion.

18. A display panel, characterized in that: The display panel includes a display area and a non-display area. The display panel includes a first inorganic film layer. The difference between the maximum and minimum thicknesses of the first inorganic film layer is greater than or equal to 0 and less than or equal to 6% of the average thickness of the first inorganic film layer.

19. The display panel according to claim 18, characterized in that: Also includes: substrate substrate; An isolation structure, located on one side of the substrate, and the isolation structure encloses an isolation opening; A touch structure, comprising the first inorganic film layer; Preferably, it further comprises a pixel definition layer, which is located between the isolation structure and the base substrate, and the pixel definition layer comprises a defining portion located in the display area, and the defining portion is used to enclose and form a pixel opening; Preferably, the isolation opening overlaps with the orthographic projections of the pixel opening on the base substrate in a one-to-one correspondence.

20. A display device, characterized in that: include: The display panel as claimed in claim 18 or 19; as well as A driving component is connected to the display panel and is used to drive the display panel to display an image.