Display device

Abstract

The invention provides a display device, which comprises a substrate comprising a display area; a plurality of sub-pixels, each sub-pixel including a light emitting layer for emitting visible light, the plurality of sub-pixels including a first sub-pixel and a second sub-pixel; the light conversion layer is arranged on the light emitting side of the light emitting layer, the light conversion layer comprises a photoluminescence pattern, and the photoluminescence pattern is used for absorbing visible light and emitting a first light signal; the receiving layer is arranged between the light emitting layer and the substrate, the receiving layer comprises a plurality of sensor elements, and the sensor elements are used for receiving a first light signal emitted by the photoluminescence pattern and reflected from an external object; wherein the orthographic projection of the photoluminescence pattern on the substrate is at least partially overlapped with the orthographic projection of the light-emitting layer of the first sub-pixel on the substrate. According to the display device provided by the invention, the second sub-pixel is used for normally displaying the image, and the first sub-pixel is matched with the photoluminescence pattern located above the first sub-pixel so as to outwards emit the first optical signal used for realizing object recognition.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display device. Background Art

[0002] OLED display devices have gradually become the mainstream display in the market due to their advantages such as wide color gamut, high resolution, high contrast, low power consumption, and flexibility. As OLED display devices are used more and more widely, such as mobile phones, watches, car-mounted, AR, VR and other display screens, the form factors are also diverse: straight, folding, four-curved, etc., and the frame requirements are getting narrower and narrower. It is necessary to develop various in-screen integration technologies to improve the user experience. Summary of the invention

[0003] In view of this, an object of the present application is to provide a display device.

[0004] Based on the above purpose, the present application provides a display device, including: a substrate, including a display area;

[0005] A plurality of sub-pixels are arranged on one side of the substrate and are located in the display area; each of the sub-pixels includes a light-emitting layer for emitting visible light, and the plurality of sub-pixels include a first sub-pixel and a second sub-pixel; a light conversion layer is arranged on the light-emitting side of the light-emitting layer, and the light conversion layer includes a photoluminescent pattern, and the photoluminescent pattern is used to absorb the visible light and emit a first light signal, and the wavelength of the first light signal is different from the wavelength of the visible light; a receiving layer is arranged between the light-emitting layer and the substrate, and the receiving layer includes a plurality of sensor elements, and the sensor elements are used to receive the first light signal emitted by the photoluminescent pattern and reflected from an external object; wherein the orthographic projection of the photoluminescent pattern on the substrate at least partially overlaps with the orthographic projection of the light-emitting layer of the first sub-pixel on the substrate.

[0006] From the above description, it can be seen that in the display device provided by the present application, the second sub-pixel is used for normal display of images, and the first sub-pixel cooperates with the photoluminescent pattern located above it to emit a first light signal for realizing object recognition. At the same time, since the orthographic projection of the photoluminescent pattern on the substrate substrate at least partially overlaps with the orthographic projection of the light-emitting layer of the first sub-pixel on the substrate substrate, the light-emitting layer of the first sub-pixel can provide a relatively stable and strong excitation light for the photoluminescent pattern, thereby ensuring that the first light signal emitted by the photoluminescent pattern has a high quality, so that the display device can better realize the recognition function of the display area. At the same time, since the photoluminescent pattern in the present application is only set at the corresponding position of the first sub-pixel, and is not set in the entire area of ​​the display area, it is conducive to reducing the difficulty and cost of preparation, and helps to improve the yield rate of the display device, which is suitable for mass production. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] In order to more clearly illustrate the technical solutions in the present application or related technologies, the drawings required for use in the embodiments or related technical descriptions are briefly introduced below. Obviously, the drawings described below are only embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0008] Figure 1 is a schematic top view of a display device according to an embodiment of the present application;

[0009] Figure 2 A schematic diagram of a first structure of a display device according to an embodiment of the present application;

[0010] Figure 3 A schematic diagram of a first structure of a sensor element of a display device according to an embodiment of the present application;

[0011] Figure 4 A schematic diagram of a first structure of a photoluminescent pattern of a display device according to an embodiment of the present application;

[0012] Figure 5 is a schematic diagram of a second structure of a display device according to an embodiment of the present application;

[0013] Figure 6 is a schematic diagram of a third structure of a display device according to an embodiment of the present application;

[0014] Figure 7 is a schematic diagram of a fourth structure of a display device according to an embodiment of the present application;

[0015] Figure 8 A schematic diagram of a second structure of a sensor element of a display device according to an embodiment of the present application;

[0016] Fig. 9 is a schematic diagram of a fifth structure of a display device according to an embodiment of the present application;

[0017] Fig.10 is the transmission spectrum of color blocks of different colors;

[0018] Fig.11 is a schematic diagram of a sixth structure of a display device according to an embodiment of the present application;

[0019] Fig.12 A schematic diagram of a second structure of a photoluminescent pattern of a display device according to an embodiment of the present application;

[0020] Fig.13 is a schematic diagram of a seventh structure of the display device according to an embodiment of the present application;

[0021] Fig.14 is a schematic diagram of an eighth structure of the display device according to an embodiment of the present application;

[0022] Fig.15 A schematic diagram of a first size and position relationship between a black matrix opening and a sensor element of a display device according to an embodiment of the present application;

[0023] Fig.16 A schematic diagram of a second size and position relationship between a black matrix opening and a sensor element of a display device according to an embodiment of the present application;

[0024] Fig.17 A schematic diagram of a third size and position relationship between a black matrix opening and a sensor element of a display device according to an embodiment of the present application;

[0025] Fig.18 A schematic diagram of a first distribution of first sub-pixels in a pixel group of a display device according to an embodiment of the present application;

[0026] Fig.19 A schematic diagram of a second distribution of first sub-pixels in a pixel group of a display device according to an embodiment of the present application;

[0027] Fig. 20 A schematic diagram of a third distribution of first sub-pixels in a pixel group of a display device according to an embodiment of the present application;

[0028] Fig.21 A schematic diagram of a fourth distribution of first sub-pixels in a pixel group of a display device according to an embodiment of the present application;

[0029] Fig. 22 is the spectrum of visible and near-infrared light;

[0030] Fig.23 is the near-infrared spectrum under different excitation sources;

[0031] Fig.24 is the near-infrared light spectrum under different currents. DETAILED DESCRIPTION

[0032] In order to make the objectives, technical solutions and advantages of the present application more clearly understood, the present application is further described in detail below in combination with specific embodiments and with reference to the accompanying drawings.

[0033] It should be noted that the relative arrangement of the components, the numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present application unless specifically stated otherwise.

[0034] At the same time, it should be understood that for the convenience of description, the sizes of the various parts shown in the drawings are not drawn according to the actual proportional relationship.

[0035] The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the present application, its application, or uses.

[0036] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present application should be the usual meanings understood by people with ordinary skills in the field to which the present application belongs. The "first", "second" and similar words used in the embodiments of the present application do not represent any order, quantity or importance, but are only used to distinguish different components. "Including" or "comprising" and similar words mean that the elements or objects appearing in front of the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0037] like Figure 1 The display device may be divided into a display area 1000 and a non-display area 2000 disposed on at least one side of the display area 1000 .

[0038] In order to meet the object recognition (for example, touch recognition, fingerprint recognition or face recognition) requirements of the display device, in some embodiments, a near-infrared emitter and a matching near-infrared sensor are provided in the display device. Near-infrared (NIR) light has the characteristics of being invisible to the human eye, strong penetration, low radiation damage, and characteristic absorption of corresponding organic substances. It is widely used in the fields of biological imaging and face recognition. Taking fingerprint recognition as an example, the near-infrared emitter emits a near-infrared light signal to the outside of the display device. The near-infrared light signal is reflected back to the display device after being irradiated with the fingerprint of the human hand, and is received by the near-infrared sensor to complete the fingerprint recognition.

[0039] In some embodiments, a near infrared emitter and a near infrared sensor are disposed in the non-display area 2000 , but this will increase the area of ​​the non-display area 2000 , making it difficult to meet the requirement of a narrow frame.

[0040] In order to solve the above problems, the near infrared emitter and the near infrared sensor can be arranged in the display area 1000 to increase the area occupied by the display area 1000 in the display device. However, if the near infrared emitter is arranged separately in the display area 1000, the thickness and manufacturing cost of the display device will increase, which is not conducive to mass production.

[0041] The applicant has found that if the visible light emitted by the sub-pixel 200 used to display images in the display device can be converted into a near-infrared signal, the space occupied by the light source of the infrared emitter can be saved, which helps to reduce the thickness and preparation cost of the display device and facilitates mass production.

[0042] In view of this, if Figure 2 and Figure 4 The embodiment of the present application provides a display device, comprising: a substrate 100, comprising a display area 1000; a plurality of sub-pixels 200, arranged on one side of the substrate 100 and located in the display area 1000; each sub-pixel 200 comprises a light-emitting layer 230 for emitting visible light, and the plurality of sub-pixels 200 comprises a first sub-pixel 210 and a second sub-pixel 220; a light conversion layer 300, arranged on a light-emitting side of the light-emitting layer 230, the light conversion layer 300 comprises a photoluminescent pattern 310, and the photoluminescent pattern 310 Used to absorb visible light and emit a first light signal, the wavelength of the first light signal is different from the wavelength of the visible light; a receiving layer 400 is arranged between the light-emitting layer 230 and the base substrate 100, and the receiving layer 400 includes a plurality of sensor elements 410, and the sensor elements 410 are used to receive the first light signal emitted by the photoluminescent pattern 310 and reflected from an external object; wherein the orthographic projection of the photoluminescent pattern 310 on the base substrate 100 at least partially overlaps with the orthographic projection of the light-emitting layer 230a of the first sub-pixel on the base substrate 100.

[0043] Exemplarily, the wavelength of the first optical signal may be greater than the wavelength of visible light, for example, the first optical signal may be an infrared light signal; or, the wavelength of the first optical signal may be less than the wavelength of visible light, for example, the first optical signal may be an ultraviolet light signal.

[0044] Exemplarily, when the first light signal is a near-infrared light signal, the sensor element 410 is a matching near-infrared sensor (NIR Sensor).

[0045] Exemplarily, the sub-pixel 200 may include an R sub-pixel capable of emitting red visible light, a B sub-pixel capable of emitting blue visible light, and a G sub-pixel capable of emitting green visible light.

[0046] For example, the photoluminescent pattern 310 may be formed by evaporation, coating, or the like.

[0047] Exemplarily, the light emitting layer 230 is an organic light emitting layer.

[0048] For example, the material of the base substrate 100 may be PI. Figure 3A support layer 500 for supporting the substrate 100 is provided on the side of the substrate 100 away from the light emitting layer 230. The material of the support layer 500 may be glass. Between the substrate 100 and the light emitting layer 230, a buffer layer 600 (Buffer), an active layer 700 (Active), a gate insulating layer 800 (GI), a gate layer 900 (Gate), an interlayer insulating layer 1100 (ILD), a source-drain electrode layer 1200 (SD), a first planar layer 1300 (PIN1) and a second planar layer 1400 (PIN2) are sequentially stacked in a direction away from the substrate 100.

[0049] Among them, the buffer layer 600 can prevent harmful substances in the base substrate 100 from invading. The active layer 700 may include a semiconductor pattern 710 for constructing a thin film transistor, and each semiconductor pattern 710 may include a first area, a second area, and a channel area between the first area and the second area. The gate insulating layer 800 is used to insulate the active layer 700 and the gate layer 900. The gate layer 900 includes a gate 910 of the thin film transistor, and the positive projection of the gate 910 in the active layer 700 can cover the channel area. The interlayer insulating layer 1100 can be used to insulate the gate layer 900 and the source and drain layer 1200. The source and drain layer 1200 may include a source 1210 and a drain 1220 of the thin film transistor, and vias may be provided in the gate insulating layer 800 and the interlayer insulating layer 1100 to electrically connect the source 1210 to the first area and the drain 1220 to the second area.

[0050] It should be noted that the above-mentioned thin film transistor can be used to construct a display driving circuit connected to the sub-pixel 200 , and can also be used to construct an identification driving circuit connected to the sensor element 410 .

[0051] Still Figure 3 The sensor element 410 may include a light absorbing layer 413, and a first sensor electrode 414 and a second sensor electrode 415 electrically connected to the light absorbing layer 413, respectively. Figure 3The left side of the middle is a thin film transistor in the identification driving circuit, and the second sensor electrode 415 and the drain electrode 1220 of the thin film transistor are arranged in the same layer and are electrically connected to each other. The light absorption layer 413 is located between the second sensor electrode 415 and the first flat layer 1300, and the first sensor electrode 414 is located between the first flat layer 1300 and the second flat layer 1400. The first sensor electrode 414 can be electrically connected to the light absorption layer 413 through a via hole arranged in the first flat layer 1300, and connected to the signal source through a wiring arranged in the source and drain electrode layer 1200. In the above structure, since there is no structural layer arranged in the same layer between the sensor element 410 and the sub-pixel 200, the sensor element 410 and the sub-pixel 200 can be arranged in spatial overlap or spatial dislocation, so the setting position of the sensor element 410 in the display area 1000 is more flexible and will not be restricted by the sub-pixel 200.

[0052] by Figure 2 and Figure 3 The structure shown in FIG. 1 is used as an example to illustrate that a first light-emitting electrode 240 (eg, an anode layer Anode) is disposed on a side of the second flat layer 1400 away from the base substrate 100. Figure 3 The right side of the middle is a thin film transistor in the display driving circuit, and the first light-emitting electrode 240 is electrically connected to the drain 1220 of the thin film transistor through a via hole provided in the first flat layer 1300 and the second flat layer 1400. A pixel defining layer 1500 is provided on the side of the first light-emitting electrode 240 away from the base substrate 100, and the pixel defining layer 1500 includes a pixel opening 1510 for partially exposing the first light-emitting electrode 240, and the light-emitting layer 230 is provided in the pixel opening 1510. A second light-emitting electrode 250 is provided on the side of the light-emitting layer 230 away from the base substrate 100. The first light-emitting electrode 240 and the second light-emitting electrode 250 are electrically connected to the light-emitting layer 230, respectively.

[0053] In this embodiment, the second sub-pixel 220 is used to display images normally. Figure 4 The visible light emitted by the light-emitting layer 230a of the first sub-pixel is absorbed by the photoluminescent pattern 310 above it. The photoluminescent pattern 310 will emit a first light signal outward under the excitation of the visible light. After the first light signal is transmitted to an external object (such as a finger or a face), it will be reflected back into the display device and at least pass through the area where the second sub-pixel 220 is located to the sensor element 410. After the sensor element 410 receives the reflected first light signal, it can realize the object recognition function based on the received first light signal.

[0054] In the display device provided in the present embodiment, the second sub-pixel 220 is used to display an image normally, and the first sub-pixel 210 cooperates with the photoluminescent pattern 310 located above it to emit a first light signal for realizing object recognition. At the same time, since the orthographic projection of the photoluminescent pattern 310 on the substrate 100 at least partially overlaps with the orthographic projection of the light-emitting layer 230a of the first sub-pixel on the substrate 100, the light-emitting layer 230a of the first sub-pixel can provide a relatively stable and strong excitation light for the photoluminescent pattern 310, thereby ensuring that the first light signal emitted by the photoluminescent pattern 310 has a high quality, so that the display device can better realize the recognition function of the display area 1000. At the same time, since the photoluminescent pattern 310 in the present embodiment is only arranged at the corresponding position of the first sub-pixel 210, and is not arranged in the entire area of ​​the display area 1000, it is conducive to reducing the difficulty and cost of preparation, and helps to improve the yield rate of the display device, which is suitable for mass production.

[0055] like Figure 2 In some embodiments, the display device further includes a black matrix layer 1600 disposed on a side of the light-emitting layer 230 away from the base substrate 100, and an encapsulation layer 1700 (TFE) disposed between the black matrix layer 1600 and the light-emitting layer 230; the black matrix layer 1600 includes a black matrix opening 1610 corresponding to at least the sub-pixel 200, the photoluminescent pattern 310 is disposed in a portion of the black matrix opening 1610, and the sensor element 410 is disposed corresponding to at least a portion of the black matrix opening 1610.

[0056] Exemplarily, the black matrix openings 1610 may correspond not only to the sub-pixels 200 (including the first sub-pixel 210 and the second sub-pixel 220 ), but also to the regions between adjacent sub-pixels 200 .

[0057] Exemplarily, the black matrix layer 1600 may block visible light and the first optical signal.

[0058] Exemplarily, the encapsulation layer 1700 is used to prevent water vapor and / or oxygen in the external environment from corroding the light-emitting layer 230 or the second light-emitting electrode 250 .

[0059] Exemplarily, a protective layer 2100 (OC) is further disposed on a side of the black matrix layer 1600 away from the base substrate 100 .

[0060] Illustratively, the black matrix layer 1600 includes a black matrix 1620 defining a black matrix opening 1610 .

[0061] by Figure 2The structure shown is used as an example to illustrate that when the first sub-pixel 210 is adjacent to the second sub-pixel 220, if the black matrix layer 1600 is not provided, even if the light-emitting layer 230a of the first sub-pixel does not emit light, the visible light emitted by the light-emitting layer 230b of the second sub-pixel may still illuminate the photoluminescent pattern 310 and excite the photoluminescent pattern 310 to emit a first light signal.

[0062] In order to avoid the above problems, the present embodiment provides a black matrix layer 1600. At this time, the visible light (such as Figure 2 The light emitting diode (as shown by the dot-dash line in FIG. 1 ) may be blocked by the black matrix 1620 in the process of emitting light toward the photoluminescent pattern 310 , so as to prevent the photoluminescent pattern 310 from being affected by the adjacent second sub-pixel 220 .

[0063] In addition, it should be noted that the first light signal reflected from the external object needs to pass through the black matrix opening 1610 to the sensor element 410. Therefore, in this embodiment, the setting position of the sensor element 410 needs to correspond to at least part of the black matrix opening 1610 to ensure that the sensor element 410 can better receive the first light signal.

[0064] like Figure 2 and Figure 5 In some embodiments, the black matrix opening 1610 includes a first opening 1611 and a second opening 1612 , the first opening 1611 corresponds to the first sub-pixel 210 one by one, the orthographic projection of the photoluminescent pattern 310 on the base substrate 100 is located within the orthographic projection of the first opening 1611 on the base substrate 100 , and each second opening 1612 corresponds to at least one second sub-pixel 220 .

[0065] Exemplarily, the thickness of the black matrix 1620 may be greater than the thickness of the photoluminescent pattern 310; or, the thickness of the black matrix 1620 may be equal to the thickness of the photoluminescent pattern 310; or, the thickness of the black matrix 1620 may be less than the thickness of the photoluminescent pattern 310, which is not limited here.

[0066] In this embodiment, the first opening 1611 corresponds to the first sub-pixel 210 one by one, that is, a black matrix 1620 is arranged around each photoluminescent pattern 310, which can ensure that each photoluminescent pattern 310 will not be affected by the visible light emitted by other adjacent sub-pixels 200 (including the first sub-pixel 210 and the second sub-pixel 220).

[0067] Similarly, when the second opening 1612 corresponds to the second sub-pixel 220 one by one, Figure 2, it is possible to prevent the visible lights emitted by the light-emitting layers 230 of adjacent second sub-pixels 220 from influencing each other, that is, it is possible to prevent optical crosstalk between adjacent second sub-pixels 220 , which helps to improve the imaging quality of the display device.

[0068] The same second opening 1612 may also correspond to a plurality of (including two or more) second sub-pixels 220. Figure 5 That is, the orthographic projection of the same second opening 1612 on the base substrate 100 coincides with the orthographic projection of the plurality of second sub-pixels 220 on the base substrate 100. At this time, the black matrix 1620 is not disposed between two adjacent second sub-pixels 220 corresponding to the same second opening 1612. On the one hand, it does not affect the excitation of the photoluminescent pattern 310. On the other hand, reducing the arrangement area of ​​the black matrix 1620 can reduce the manufacturing cost of the display device and reduce the shielding of the reflected first light signal by the black matrix 1620, which helps the sensor element 410 to better receive the first light signal.

[0069] like Figure 6 and Figure 7 In some embodiments, the display device includes a pixel defining layer 1500 disposed between the receiving layer 400 and the black matrix layer 1600, the pixel defining layer 1500 includes a plurality of pixel openings 1510, and a defining body 1520 defining the pixel openings 1510; the light emitting layer 230 is located in the pixel opening 1510; the black matrix opening 1610 also includes a third opening 1613 corresponding to the defining body 1520, and the sensor element 410 includes a first element 411 corresponding to the third opening 1613.

[0070] In order to enable the sensor element 410 in the receiving layer 400 to better receive the reflected first light signal, the arrangement area of ​​the black matrix 1620 can be further reduced. To this end, in addition to the first opening 1611 and the second opening 1612, the black matrix layer 1600 of this embodiment further includes a third opening 1613.

[0071] like Figure 6 and Figure 7 , the first light signal reflected by the external object can be emitted to the sensor element 410 not only through the second opening 1612, but also through the third opening 1613. After the first light signal passes through the third opening 1613, it no longer passes through the sub-pixel 200 but passes through the defining body 1520 between adjacent sub-pixels 200, and is received by the first element 411 disposed below the defining body 1520.

[0072] At this time, at least the sensor element 410 located below the second opening 1612 and the first element 411 located below the third opening 1613 can receive the first light signal, further increasing the total reception amount of the reflected first light signal by the receiving layer 400, which helps to improve the recognition sensitivity.

[0073] In some embodiments, the thickness of the pixel definition layer 1500 is 1.5 micrometers to 2 micrometers.

[0074] Exemplarily, the thickness of the pixel defining layer 1500 may be 1.5 μm, 1.6 μm, 1.7 μm, 1.8 μm, 1.9 μm, or 2 μm.

[0075] If the thickness of the pixel defining layer 1500 is less than 1.5 microns, the defining effect of the defining body 1520 on the light-emitting layer 230 is weak; if the thickness of the pixel defining layer 1500 is greater than 2 microns, it will increase the difficulty of the first light signal passing through the defining body 1520, which may have an adverse effect on the sensor element 410 receiving the first light signal.

[0076] Therefore, in this embodiment, the thickness of the pixel defining layer 1500 is designed to be 1.5 microns to 2 microns. While ensuring that the defining body 1520 can achieve a limiting effect on the light-emitting layer 230 of each sub-pixel 200, it can also ensure that the first light signal can smoothly pass through the first defining body 1520 and be received by the first element 411, which helps to improve recognition sensitivity.

[0077] like Figure 8 In some embodiments, the sensor element 410 includes a light absorbing layer 413, and a first sensor electrode 414 located on the side of the light absorbing layer 413 away from the base substrate 100; a first light emitting electrode 240 is provided on the side of the light emitting layer 230 close to the base substrate 100; the orthographic projection of the first element 411 on the pixel defining layer 1500 is located within the defining body 1520; the first sensor electrode 414 of the first element 411 is provided on the same layer as the first light emitting electrode 240.

[0078] Exemplarily, the first sensor electrode 414 can serve as the anode of the sensor element 410, and the second sensor electrode 415 located on the side of the light absorbing layer 413 away from the base substrate 100 can serve as the cathode of the sensor element 410; alternatively, the first sensor electrode 414 can serve as the cathode of the sensor element 410, and the second sensor electrode 415 can serve as the anode of the sensor element 410.

[0079] Illustratively, the first light-emitting electrode 240 can serve as the anode of the light-emitting layer 230 , and the second light-emitting electrode 250 located on the side of the light-emitting layer 230 away from the base substrate 100 can serve as the cathode of the light-emitting layer 230 ; or, the first light-emitting electrode 240 can serve as the cathode of the light-emitting layer 230 , and the second light-emitting electrode 250 can serve as the anode of the light-emitting layer 230 .

[0080] Exemplarily, the second light emitting electrode 250 may be provided as a whole layer; or, the second light emitting electrode 250 may be provided in a pattern corresponding to the sub-pixels 200 one by one.

[0081] In order to further reduce the thickness of the display device, in the present embodiment, if the sensor element 410 includes only the first element 411, since the first element 411 is located between two sub-pixels 200, the first sensor electrode 414 and the first light-emitting electrode 240 can be arranged on the same layer, thereby eliminating the second planarization layer 1400 to achieve the effect of reducing the thickness of the display device.

[0082] In addition, in this embodiment, since the first light emitting electrode 240 , the light emitting layer 230 and the second light emitting electrode 250 are no longer disposed above the first element 411 , the receiving rate of the first light signal by the first element 411 is improved.

[0083] like Figure 2 and Figure 3 In some embodiments, the sensor element 410 includes a second element 412, and the orthographic projection of each second element 412 on the substrate 100 partially overlaps with the orthographic projection of the light-emitting layer 230 of at least one sub-pixel 200 on the substrate 100; the sensor includes a first sensor electrode 414, and a first light-emitting electrode 240 is provided on a side of the light-emitting layer 230 close to the substrate 100, and the first sensor electrode 414 is located on a side of the first light-emitting electrode 240 close to the substrate 100.

[0084] by Figure 3 The structure shown in FIG. 2 is used as an example to illustrate that since the second element 412 is located below the first light-emitting electrode 240, the location of the second element 412 can be more flexible and is not limited by the first light-emitting electrode 240. Figure 5, the same second element 412 can be arranged corresponding to one sub-pixel 200 (such as the second element 412 on the right side of the figure), that is, the orthographic projection of one second element 412 on the substrate 100 partially overlaps with the orthographic projection of the light-emitting layer 230 of one sub-pixel 200 on the substrate 100. Alternatively, the same second element 412 can also be arranged corresponding to multiple sub-pixels 200 (such as the second element 412 on the left side of the figure), that is, the orthographic projection of one second element 412 on the substrate 100 partially overlaps with the orthographic projection of the light-emitting layer 230 of multiple sub-pixels 200 on the substrate 100.

[0085] It should be noted that the display device may include only the second element 412, or only the first element 411, or both the first element 411 and the second element 412. Figure 3 When the sensor element 410 is disposed below the first light-emitting electrode 240 as shown, the sensor element 410 can be disposed not only directly below the light-emitting layer 230, but also directly below the defining body 1520, or extending from directly below one of the sub-pixels 200 through the defining body 1520 to directly below another adjacent sub-pixel 200, as shown in FIG. Figure 7 .

[0086] like Fig. 9 In some embodiments, the black matrix opening 1610 includes a first opening 1611 and a second opening 1612, the first opening 1611 corresponds one-to-one to the first sub-pixel 210, and the second opening 1612 corresponds one-to-one to the second sub-pixel 220; a color resist block 1900 is disposed in the second opening 1612, and the color of the color resist block 1900 is the same as the color of the visible light emitted by the corresponding sub-pixel 200.

[0087] Exemplarily, the color of the color block 1900 corresponding to the R sub-pixel is red, the color of the color block 1900 corresponding to the B sub-pixel is blue, and the color of the color block 1900 corresponding to the G sub-pixel is green.

[0088] It should be noted that Fig.10 The transmittance of the red color block, the blue color block, and the green color block is shown, with the ordinate being the transmittance and the abscissa being the wavelength.

[0089] pass Fig.10It can be seen that when the first optical signal is near-infrared light, it can pass through the red color block and the green color block, but it is difficult to pass through the blue color block. In addition, in this embodiment, only the photoluminescent pattern 310 can be set in the first opening 1611 without the color block 1900, and only the color block 1900 can be set in the second opening 1612. Therefore, part of the B sub-pixels can be used as the first sub-pixel 210, and the G sub-pixels and at least part of the R sub-pixels can be used as the second sub-pixel 220. At this time, the blue visible light emitted by the B sub-pixel can excite the photoluminescent pattern 310 and emit the first optical signal. After encountering an external object, the first optical signal is reflected back to the display device and can pass through the red color block and the green color block and then be emitted to the receiving layer 400, and is received by the sensor element 410.

[0090] Combining the above structure, it can be seen that in this embodiment, by setting the color block 1900 in the second opening 1612, the light conversion layer 300 and the color filter layer can be integrated into the same structural layer. Without increasing the thickness of the display device, the color block 1900 can be set to improve the brightness, color vividness and contrast of the image and reduce the reflection of ambient light. On the basis of ensuring that the display area 1000 of the display device realizes the object recognition function, the imaging quality of the display device can be further improved.

[0091] like Fig.11 and Fig.12 In some embodiments, a color resist block 1900 is also disposed in the first opening 1611 , and the color resist block 1900 is located on a side of the photoluminescent pattern 310 close to the base substrate 100 .

[0092] Exemplarily, a touch layer 1800 (TSP) is further disposed between the encapsulation layer 1700 and the black matrix layer 1600 . To block metal reflection, the photoluminescent pattern 310 needs to be disposed on a side of the touch layer 1800 and the color resist block 1900 away from the base substrate 100 .

[0093] In this embodiment, all sub-pixels 200 are correspondingly provided with color resist blocks 1900, that is, a color filter layer covering all sub-pixels 200 is first formed on the side of the encapsulation layer 1700 away from the base substrate 100, and then a photoluminescent pattern 310 is formed on the side of the color resist block 1900 corresponding to the first sub-pixel 210 away from the base substrate 100.

[0094] like Fig.12 The visible light emitted by the light emitting layer 230a of the first sub-pixel may first pass through the color resist block 1900 and then be emitted toward the photoluminescent pattern 310 to excite the photoluminescent pattern 310 and emit a first light signal.

[0095] In this embodiment, the color resist blocks 1900 are provided for all sub-pixels 200 , so there is no need to redesign the mask for forming the color resist blocks 1900 , which helps to reduce the difficulty and cost of manufacturing the color resist blocks 1900 .

[0096] It should be noted that if Fig.13 and Fig.14 For a display device provided with a color block 1900 , the black matrix layer 1600 may also be provided with a third opening 1613 , and the beneficial effect of providing the third opening 1613 is the same as the beneficial effect of providing the third opening 1613 described above, which will not be repeated here.

[0097] In some embodiments, the thickness of the color resist block 1900 is 2 micrometers to 4 micrometers.

[0098] Exemplarily, the thickness of the color resist block 1900 may be 2 μm, 2.5 μm, 3 μm, 3.5 μm or 4 μm.

[0099] If the thickness of the color resist block 1900 is less than 2 microns, the effect of improving the image quality is weak; if the thickness of the color resist block 1900 is greater than 4 microns, it will increase the difficulty of the first light signal passing through the color resist block 1900, which may have an adverse effect on the sensor element 410 receiving the first light signal.

[0100] Therefore, in this embodiment, the thickness of the color resist block 1900 is designed to be 2 microns to 4 microns. While ensuring that the image quality can be significantly improved by the color resist block 1900, it can also ensure that the first light signal can smoothly pass through the color resist block 1900 and be received by the sensor element 410, which helps to improve the recognition sensitivity.

[0101] In some embodiments, the thickness of encapsulation layer 1700 is 10 microns to 14 microns.

[0102] Exemplarily, the thickness of the encapsulation layer 1700 may be 10 μm, 11 μm, 12 μm, 13 μm, or 14 μm.

[0103] If the thickness of the packaging layer 1700 is less than 10 microns, the effect of preventing water vapor and / or oxygen in the external environment from corroding the light-emitting layer 230 or the second light-emitting electrode 250 is weak; if the thickness of the packaging layer 1700 is greater than 14 microns, it will increase the difficulty of the first light signal passing through the packaging layer 1700, which may have an adverse effect on the sensor element 410 receiving the first light signal.

[0104] Therefore, in this embodiment, the thickness of the encapsulation layer 1700 is designed to be 10 microns to 14 microns. While ensuring that the encapsulation layer 1700 can reliably prevent water vapor and / or oxygen in the external environment from corroding the light-emitting layer 230 or the second light-emitting electrode 250, it can also ensure that the first light signal can smoothly pass through the encapsulation layer 1700 and be received by the sensor element 410, which helps to improve the recognition sensitivity.

[0105] In some embodiments, the thickness of the touch layer 1800 is 0.5 micrometers.

[0106] If the thickness of the touch layer 1800 is too small, the thickness of the touch electrode in the touch layer 1800 will also be correspondingly small, which may cause the impedance of the touch electrode to be larger; if the thickness of the touch layer 1800 is too large, it will increase the difficulty of the first light signal passing through the touch layer 1800, which may have an adverse effect on the sensor element 410 receiving the first light signal.

[0107] Therefore, in this embodiment, the thickness of the touch layer 1800 is designed to be 0.5 microns. While ensuring that the impedance of the touch electrode in the touch layer 1800 is small, it can also ensure that the first light signal can smoothly pass through the touch layer 1800 and be received by the sensor element 410, which helps to improve the recognition sensitivity.

[0108] In some embodiments, the thickness of the black matrix layer 1600 is 1 micrometer to 2 micrometers.

[0109] Illustratively, the thickness of the black matrix layer 1600 may be 1 μm, 1.1 μm, 1.2 μm, 1.3 μm, 1.4 μm, 1.5 μm, 1.6 μm, 1.7 μm, 1.8 μm, 1.9 μm or 2 μm.

[0110] If the thickness of the black matrix layer 1600 is too small, the risk of optical crosstalk between adjacent sub-pixels 200 will increase; if the thickness of the black matrix layer 1600 is too large, it may cause excessive obstruction to the reflected first light signal, which will have an adverse effect on the sensor element 410 receiving the first light signal.

[0111] Therefore, in this embodiment, the thickness of the black matrix layer 1600 is designed to be 1 micron to 2 microns. While reducing the risk of optical crosstalk between adjacent sub-pixels 200, it can also reduce the obstruction of the reflected first light signal caused by the black matrix layer 1600, which helps to improve recognition sensitivity.

[0112] like Figure 2 , Fig.15 , Fig.16 and Fig.17 In some embodiments, the orthographic projection of the black matrix opening 1610 on the receiving layer 400 is located within the sensor element 410 .

[0113] Fig.15 The diagram shows the size and position relationship between the second element 412 and the second opening 1612 when the same second opening 1612 corresponds to a second sub-pixel 220 . Fig.17 The size and position relationship between the second element 412 and the second opening 1612 is shown when the same second opening 1612 corresponds to multiple second sub-pixels 220. The larger the area of ​​the second element 412, the more first light signals passing through the second opening 1612 it can receive, which helps to improve recognition sensitivity.

[0114] Similarly, Fig.16 The size and position relationship between the first element 411 and the third opening 1613 is shown. The larger the area of ​​the first element 411 is, the more first light signals passing through the third opening 1613 it can receive, which helps to improve the recognition sensitivity.

[0115] like Fig.18 , Fig.19 , Fig. 20 and Fig.21 In some embodiments, the display device includes a plurality of pixel groups 3000 arranged in an array, each pixel group 3000 includes a plurality of pixels 3100 arranged in an array, each pixel 3100 includes a plurality of sub-pixels 200 of different colors, and at least one sub-pixel 200 in each pixel group 3000 is a first sub-pixel 210.

[0116] by Fig.18 Taking the structure shown as an example, a pixel group 3000 may include twelve pixels 3100, and the twelve pixels 3100 are arranged in two rows. Each pixel 3100 includes three sub-pixels 200, namely, R sub-pixel, B sub-pixel and G sub-pixel. Fig.18 In the pixel group 3000 shown, the R sub-pixel in the first pixel 3100 in the first row from left to right, the B sub-pixel in the fourth pixel 3100 in the first row, the B sub-pixel in the sixth pixel 3100 in the first row, and the R sub-pixel in the fifth pixel 3100 in the second row are first sub-pixels 210, and the other sub-pixels 200 in the pixel group 3000 are second sub-pixels 220.

[0117] The first sub-pixels 210 are scatteredly distributed in the display area 1000 , so as to prevent the first sub-pixels 210 from affecting the normal display of images by the display device, thereby ensuring that the display device has an object recognition function while displaying images normally.

[0118] The distribution rule of the first sub-pixels 210 in the pixel group 3000 may include various situations, which are exemplarily described below.

[0119] like Fig.19 In some embodiments, in the pixel group 3000 , half of the pixels 3100 each include a first sub-pixel 210 .

[0120] exist Fig.19 In the structure shown, a pixel group 3000 may include four pixels 3100 arranged in two rows. The B sub-pixels 200 of the two pixels 3100 in the first row are first sub-pixels 210 , and the other sub-pixels 200 in the pixel group 3000 are second sub-pixels 220 .

[0121] It should be noted that the pixels 3100 including the first sub-pixel 210 may be located in the same row, or may be arranged alternately in different rows, which is not limited here.

[0122] like Fig. 20 In some embodiments, the pixel group 3000 includes four pixels 3100 , wherein one pixel 3100 includes one first sub-pixel 210 .

[0123] exist Fig. 20 In the structure shown, a pixel group 3000 may include four pixels 3100, and the four pixels 3100 are arranged in two rows. The B sub-pixel in the second pixel 3100 from left to right in the first row is the first sub-pixel 210, and the other sub-pixels 200 in the pixel group 3000 are all second sub-pixels 220.

[0124] like Fig.21 In some embodiments, the pixel group 3000 includes six pixels 3100 , wherein one pixel 3100 includes one first sub-pixel 210 .

[0125] exist Fig.21 In the structure shown, a pixel group 3000 may include six pixels 3100, and the six pixels 3100 are arranged in two rows. The B sub-pixel in the third pixel 3100 from left to right in the first row is the first sub-pixel 210, and the other sub-pixels 200 in the pixel group 3000 are all second sub-pixels 220.

[0126] like Figure 2 In some embodiments, the first sub-pixel 210 includes a sub-pixel 200 capable of emitting red visible light and / or a sub-pixel 200 capable of emitting blue visible light.

[0127] Based on the characteristics of the photoluminescent pattern 310 , the first sub-pixel 210 can be selected. When the photoluminescent pattern 310 can be excited by blue visible light and red visible light to emit a first light signal, some R sub-pixels and / or some B sub-pixels are selected as the first sub-pixels 210 in the display device.

[0128] In some embodiments, the wavelength of the first optical signal is greater than the wavelength of visible light, and the material of the photoluminescent pattern 310 is a down-conversion luminescent material for increasing the wavelength.

[0129] Exemplarily, the first optical signal may be a near-infrared optical signal having a wavelength of 700 to 1200 nm. Fig. 22 In the spectrum shown, the black curve represents visible light and the red curve represents near-infrared light.

[0130] Fig.23 The near-infrared spectra under different excitation sources are shown. Fig.24 The near-infrared light spectra at different currents are shown.

[0131] For example, the down-conversion luminescent material may be a fluorescent material, for example, "InBO3:Cr 3+ ”, “ZnGa2O4∶xCr 3+ , yMgF2", etc., with broadband near-infrared emission covering the 700 to 1200nm band under blue visible light or red visible light excitation at different doping concentrations.

[0132] The photoluminescent pattern 310 is formed by using down-conversion luminescent materials, so that the photoluminescent pattern 310 has the advantages of small size, high efficiency, long life, wide spectrum, and adjustable wavelength. It can absorb the blue visible light or red visible light emitted by the luminescent layer and convert it into higher and straighter near-infrared light.

[0133] It should be noted that the above describes some embodiments of the present application. Other embodiments are within the scope of the appended claims.

[0134] The various embodiments in the present application are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0135] The description of the present application is given for the purpose of illustration and description, and is not intended to be exhaustive or to limit the present application to the disclosed form. Many modifications and variations are obvious to those of ordinary skill in the art. The embodiments are selected and described in order to better illustrate the principles and practical applications of the present application, and to enable those of ordinary skill in the art to understand the present application and thus design various embodiments with various modifications suitable for specific purposes.

[0136] A person skilled in the art should understand that the discussion of any of the above embodiments is merely illustrative and is not intended to imply that the scope of the present application is limited to these examples. In line with the concept of the present application, the technical features in the above embodiments or different embodiments may be combined, the steps may be implemented in any order, and there are many other variations of the different aspects of the embodiments of the present application as described above, which are not provided in detail for the sake of simplicity.

[0137] Although the present application has been described in conjunction with specific embodiments thereof, many alternatives, modifications and variations of these embodiments will be apparent to those skilled in the art in light of the foregoing description.

[0138] The embodiments of the present application are intended to cover all such substitutions, modifications and variations that fall within the broad scope of the present application. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiments of the present application should be included in the protection scope of the present application.

Claims

1. A display device, characterized in that: include: A substrate base, including a display area; A plurality of sub-pixels are arranged on one side of the base substrate and located in the display area; each of the sub-pixels includes a light-emitting layer for emitting visible light, and the plurality of sub-pixels include a first sub-pixel and a second sub-pixel; A light conversion layer is disposed on the light-emitting side of the light-emitting layer, the light conversion layer comprises a photoluminescent pattern, the photoluminescent pattern is used to absorb the visible light and emit a first light signal, the wavelength of the first light signal is different from the wavelength of the visible light; a receiving layer disposed between the light-emitting layer and the base substrate, the receiving layer comprising a plurality of sensor elements, the sensor elements being used to receive a first light signal emitted by the photoluminescent pattern and reflected from an external object; The orthographic projection of the photoluminescent pattern on the base substrate at least partially overlaps with the orthographic projection of the light-emitting layer of the first sub-pixel on the base substrate.

2. The display device according to claim 1, characterized in that The display device further comprises a black matrix layer disposed on a side of the light emitting layer away from the base substrate, and an encapsulation layer disposed between the black matrix layer and the light emitting layer; The black matrix layer includes black matrix openings corresponding to at least the sub-pixels, the photoluminescent patterns are arranged in a portion of the black matrix openings, and the sensor elements are arranged corresponding to at least a portion of the black matrix openings.

3. The display device according to claim 2, characterized in that The black matrix openings include a first opening and a second opening, the first openings correspond one-to-one to the first sub-pixels, the orthographic projection of the photoluminescent pattern on the base substrate is located within the orthographic projection of the first opening on the base substrate, and each of the second openings corresponds to at least one second sub-pixel.

4. The display device according to claim 3, characterized in that The display device comprises a pixel defining layer disposed between the receiving layer and the black matrix layer, the pixel defining layer comprising a plurality of pixel openings and a defining body defining the pixel openings; the light emitting layer is located in the pixel openings; The black matrix opening further includes a third opening corresponding to the defining body, and the sensor element includes a first element corresponding to the third opening.

5. The display device according to claim 4, characterized in that: The sensor element comprises a light absorbing layer, and a first sensor electrode located on a side of the light absorbing layer away from the substrate; A first light-emitting electrode is disposed on a side of the light-emitting layer close to the base substrate; The orthographic projection of the first element on the pixel defining layer is located within the defining body, and the first sensor electrode of the first element is arranged in the same layer as the first light-emitting electrode.

6. The display device according to claim 2, characterized in that: The black matrix openings include a first opening and a second opening, the first openings correspond to the first sub-pixels one-to-one, and the second openings correspond to the second sub-pixels one-to-one; A color block is disposed in the second opening, and the color of the color block is the same as the color of the visible light emitted by the corresponding sub-pixel.

7. The display device according to claim 6, characterized in that: The color resist block is also disposed in the first opening, and the color resist block is located on a side of the photoluminescent pattern close to the base substrate.

8. The display device according to claim 6, characterized in that: The thickness of the color block is 2 micrometers to 4 micrometers; and / or, The display device comprises a pixel defining layer, wherein the thickness of the pixel defining layer is 1.5 micrometers to 2 micrometers; and / or, The thickness of the encapsulation layer is 10 micrometers to 14 micrometers; and / or, The thickness of the black matrix layer is 1 micrometer to 2 micrometers; and / or, A touch layer is also disposed between the black matrix layer and the encapsulation layer, and the thickness of the touch layer is 0.5 micrometers.

9. The display device according to claim 2, characterized in that: The orthographic projection of the black matrix opening on the receiving layer is located within the sensor element.

10. The display device according to claim 1, characterized in that The sensor element comprises a second element, and the orthographic projection of each of the second elements on the substrate overlaps with the orthographic projection of the light emitting layer of at least one of the sub-pixels on the substrate; The sensor comprises a first sensor electrode. A first light-emitting electrode is disposed on a side of the light-emitting layer close to the base substrate. The first sensor electrode is located on a side of the first light-emitting electrode close to the base substrate.

11. The display device according to claim 1, characterized in that: The display device includes a plurality of pixel groups arranged in an array, each of the pixel groups includes a plurality of pixels arranged in an array, each of the pixels includes a plurality of sub-pixels of different colors, and at least one sub-pixel in each of the pixel groups is the first sub-pixel.

12. The display device according to claim 11, characterized in that: The pixel group includes four pixels, one of which includes one first sub-pixel; or In the pixel group, half of the pixels each include one first sub-pixel; or, The pixel group includes six pixels, and one of the pixels includes one of the first sub-pixels.

13. The display device according to claim 1, characterized in that: The first sub-pixel includes a sub-pixel capable of emitting red visible light and / or a sub-pixel capable of emitting blue visible light.

14. The display device according to claim 1, characterized in that The wavelength of the first optical signal is greater than the wavelength of the visible light, and the material of the photoluminescent pattern is a down-conversion luminescent material for increasing the wavelength.

Images