Wafer detection system and method based on X-ray small-angle diffraction

Abstract

The invention belongs to the technical field of X-ray detection, and discloses a wafer detection system and method based on X-ray small-angle diffraction. The system comprises a light source assembly, and the light source assembly comprises three X-ray sources and is used for generating three X-ray beams for irradiating a sample to be detected; the rotary sample table is used for supporting the to-be-tested sample and adjusting the angle of the to-be-tested sample in the testing process so as to realize multi-angle measurement; the detection device is positioned at the rear end of the rotary sample table and is used for receiving scattering information of the three X-ray beams penetrating through the to-be-detected sample; the control device is used for controlling the light source assembly, the rotary sample table and the detection device; and the data analysis device is used for receiving the scattering information of the detection device and obtaining the structure information of the sample to be detected from the scattering information. The efficiency of small-angle diffraction wafer measurement can be improved.

Description

Technical Field

[0001] The present application relates to the field of X-ray detection technology, and in particular to a wafer detection system and method based on X-ray small-angle diffraction. Background Art

[0002] Small-angle X-ray scattering (SAXS) refers to the scattering phenomenon that occurs when X-rays are irradiated onto a sample within a small angle range of 2° to 5° around the incident X-ray beam. Since the scattering of electromagnetic waves follows the inverse law - the larger the effective size of the irradiated object relative to the incident wave, the smaller the scattering angle, SAXS is mainly suitable for studying submicroscopic structures with sizes ranging from hundreds to thousands of angstroms, such as polymers, proteins, sol-gels, ultrafine powders, and porous carbon.

[0003] SAXS technology can accurately calculate the structural information of materials by analyzing the scattering pattern of X-rays in the sample. It has been verified in practice that SAXS can provide statistical average information inside the sample and is suitable for the detection of liquids, powders, films, bulk materials and even living things. Some polymer materials can obtain sufficiently strong scattering signals through SAXS, while transmission electron microscopy (TEM) may not provide clear and effective information. For porous materials, SAXS can detect both open and closed pores, while electron microscopy and gas adsorption laws cannot determine closed pores.

[0004] Since SAXS can measure the tiny structure of a substance, it has the potential to be used to measure the size of microscopic patterns on the wafer surface. However, the power of current X-ray tubes is relatively low, and for inorganic materials such as wafers, the measurement time is significantly longer than that for measuring organic materials. This low efficiency has severely restricted the application of SAXS in the semiconductor field. Summary of the invention

[0005] To this end, the embodiments of the present application provide a wafer detection system and method based on X-ray small-angle diffraction, which can improve the efficiency of small-angle diffraction wafer measurement.

[0006] In a first aspect, the present application provides a wafer inspection system based on small-angle X-ray diffraction.

[0007] This application is achieved through the following technical solutions:

[0008] A wafer inspection system based on X-ray small-angle diffraction, comprising:

[0009] A light source assembly, the light source assembly comprising three X-ray sources for generating three X-ray beams for irradiating a sample to be tested;

[0010] The rotating sample stage is used to support the sample to be tested and adjust the angle of the sample to be tested during the test process to achieve multi-angle measurement;

[0011] A detection device, located at the rear end of the rotating sample stage, is used to receive scattering information of three X-ray beams passing through the sample to be tested;

[0012] A control device, used to control the light source assembly, the rotating sample stage and the detection device;

[0013] The data analysis device is used to receive the scattering information of the detection device and obtain the structural information of the sample to be tested from the scattering information.

[0014] In a preferred example of the present application, it can be further configured that three incident light paths are included between the light source assembly and the rotating sample stage, and each incident light path corresponds to an X-ray source:

[0015] Each incident light path includes a collimator, a first slit, a second slit and a pre-sample slit arranged along the propagation direction of the X-rays. The collimator is used to convert the X-ray beam into a parallel beam, the first slit is used to adjust the first divergence angle of the X-ray beam propagating along the incident light path, the second slit is used to adjust the second divergence angle of the X-ray beam propagating along the incident light path, and the pre-sample slit is used to adjust the spot size of the X-ray beam.

[0016] In a preferred example of the present application, it can be further set as follows:

[0017] Each incident light path includes a collimating structure, which is located between the first slit and the second slit and is used to control the divergence level of the X-ray beam propagating along the incident light path.

[0018] In a preferred example of the present application, it can be further set as follows:

[0019] The collimation structure comprises a quartz tube switching device and a plurality of collimation quartz tubes with different apertures; the collimation quartz tubes are mounted on the quartz tube switching device, and the quartz tube switching device is used to align the centers of different collimation quartz tubes with the X-ray beam.

[0020] In a preferred example of the present application, it can be further set as follows:

[0021] The quartz tube switching device comprises a driving unit and a rotating disc, the edge of the rotating disc is evenly provided with a plurality of mounting holes of different apertures, and the collimating quartz tube is fixed on the rotating disc by passing through the mounting holes;

[0022] The output end of the driving unit is connected to the central axis of the rotating disk, and the driving unit drives the rotating disk to rotate so that the center of the collimating quartz tube with different collimating structures is aligned with the X-ray beam.

[0023] In a preferred example of the present application, it can be further set as follows:

[0024] The quartz tube switching device comprises a driving unit and a moving plate, the moving plate is provided with a plurality of mounting holes with different apertures, and the collimating quartz tube is fixed on the moving plate by passing through the mounting holes;

[0025] The driving unit drives the moving plate to drive the collimating quartz tube to move, so that the center of the collimating quartz tube switched by the collimating structure is aligned with the X-ray beam.

[0026] In a preferred example of the present application, it can be further configured that the collimating quartz tube is a collimating quartz tube with no coating inside or a collimating quartz tube with a metal coating on the surface.

[0027] In a preferred example of the present application, it can be further arranged that when the collimating quartz tube is a collimating quartz tube with a metal coating on the surface, the metal coating includes at least one of a gold coating, a platinum coating, an aluminum coating or a nickel coating, or a multilayer metal film formed by stacking multiple metal coatings.

[0028] In a preferred example of the present application, it can be further configured that three collimators are arranged at the rear end of the rotating sample stage, and the three collimators are arranged on three incident light paths passing through three outgoing light paths of the sample to be tested, the inlet of the collimator faces the rotating sample stage, and the outlet of the collimator faces the detection device.

[0029] In a preferred example of the present application, it can be further configured that the collimator includes a plurality of blocking plates, and the blocking plates are arranged in a horizontal manner.

[0030] In a preferred example of the present application, it can be further configured that the collimator includes a plurality of blocking plates, and the blocking plates are arranged in a vertical manner.

[0031] In a preferred example of the present application, it can be further configured that the collimator includes a plurality of blocking plates, and the blocking plates are arranged in a cross-shaped manner.

[0032] In a second aspect, the present application provides a wafer detection method based on small-angle X-ray diffraction.

[0033] This application is achieved through the following technical solutions:

[0034] A wafer detection method based on X-ray small-angle diffraction, comprising:

[0035] Turn on the light source component;

[0036] The sample to be tested is transferred to the rotating sample stage, and the rotating sample stage is controlled to vertically raise the sample to be tested;

[0037] Controlling three X-ray sources in the light source assembly to emit X-rays to the sample to be tested;

[0038] The detection device receives the spot image generated by the sample to be tested under the irradiation of three X-ray sources;

[0039] The light spot image is analyzed and processed to obtain the structural information of the sample to be tested.

[0040] In a preferred example of the present application, it can be further configured that after the light source assembly is turned on, the method further includes:

[0041] Adjust the collimating mirror, the first slit, the second slit and the sample front slit between each X-ray source and the rotating sample stage.

[0042] In a preferred example of the present application, it can be further configured that each incident light path includes a collimating structure, the collimating structure includes a quartz tube switching device and a plurality of collimating quartz tubes with different apertures, and after the light source assembly is turned on, it also includes:

[0043] Based on the spot size required by the sample to be tested, a target quartz tube is determined from a number of collimated quartz tubes with different apertures, and the quartz tube switching device is controlled to align the center of the target quartz tube with the X-ray beam.

[0044] In summary, compared with the prior art, the technical solution provided in the embodiment of the present application has at least the following beneficial effects:

[0045] The wafer detection system proposed in the present application includes a light source assembly, which includes three X-ray sources for generating three X-ray beams for irradiating the sample to be tested; a rotating sample stage for supporting the sample to be tested and adjusting the angle of the sample to be tested during the test to achieve multi-angle measurement; a detection device, located at the rear end of the rotating sample stage, for receiving the scattering information of the three X-ray beams passing through the sample to be tested; a control device for controlling the light source assembly, the rotating sample stage and the detection device; a data analysis device for receiving the scattering information of the detection device and obtaining the structural information of the sample to be tested from the scattering information. The three X-ray sources of the wafer detection system proposed in the present application respectively generate three X-ray beams to irradiate the sample to be tested from different directions. This multi-beam design further enhances the comprehensiveness of the detection, can simultaneously obtain scattering information from multiple directions, and reduce the time waste caused by the frequent angle adjustment required for single-beam detection; through multi-angle measurement and multiple detection devices receiving scattering information, more abundant data can be obtained; the scattering information received by the detection device can be quickly processed to extract the structural information of the sample to be tested. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Figure 1 A schematic diagram of the structure of a wafer inspection system based on small-angle X-ray diffraction provided in one embodiment of the present application;

[0047] Figure 2 A schematic structural diagram of a wafer inspection system based on small-angle X-ray diffraction provided in yet another embodiment of the present application;

[0048] Figure 3 A schematic diagram of the structure of a wafer inspection system based on small-angle X-ray diffraction provided by another embodiment of the present application;

[0049] Figure 4 A schematic diagram of the structure of a wafer inspection system based on small-angle X-ray diffraction provided by another embodiment of the present application;

[0050] Figure 5 A schematic structural diagram of a collimation structure provided in another embodiment of the present application;

[0051] Figure 6 A schematic structural diagram of a quartz tube switching device provided in another embodiment of the present application;

[0052] Figure 7 A schematic structural diagram of a quartz tube switching device provided in another embodiment of the present application;

[0053] Figure 8 A schematic diagram of the structure of a wafer inspection system based on small-angle X-ray diffraction provided by another embodiment of the present application;

[0054] Description of reference numerals:

[0055] Light source assembly 1, a first X-ray source 10a, a second X-ray source 10b, a third X-ray source 10c, a rotating sample stage 2, a detection device 3, a control device 4, a first detector 30a, a second detector 30b, a third detector 30c, a data analysis device 5, a collimating mirror 60, a first slit 61, a second slit 62, a sample front slit 63, a collimating structure 64, a quartz tube switching device 65, a collimating quartz tube 66, a driving unit 651, a rotating disk 652, a mounting hole 653, a movable plate 654, and a collimator 70. DETAILED DESCRIPTION

[0056] This specific embodiment is merely an explanation of the present application and is not a limitation of the present application. After reading this specification, those skilled in the art may make modifications to the present embodiment without any creative contribution as needed, but such modifications are protected by the patent law as long as they are within the scope of the claims of the present application.

[0057] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0058] In addition, the term "and / or" in this application is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this application, unless otherwise specified, generally indicates that the associated objects before and after are in an "or" relationship.

[0059] In this application, the terms "first", "second", etc. are used to distinguish identical or similar items with basically the same effects and functions. It should be understood that there is no logical or temporal dependency between "first", "second", and "nth", nor is there any limitation on quantity and execution order.

[0060] In the embodiments of the present application, words such as "exemplary" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in the embodiments of the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a specific way.

[0061] In the semiconductor wafer manufacturing process, the size and morphology of the microstructure are key factors affecting chip performance and yield. These dimensions are usually called critical dimensions (CD), which are important indicators for controlling wafer processing quality. Critical dimensions include but are not limited to the depth, pitch, height, top width, bottom width, etc. of the groove after etching. Accurate measurement and strict control of these parameters are essential to ensure the performance and reliability of semiconductor devices.

[0062] Small-angle scattering (SAS) is a technique that uses the scattering pattern generated by the interaction between X-rays and samples to analyze the internal structure of a sample. When incident X-rays pass through a sample, a specific scattering pattern is formed on the detector. By analyzing these patterns, the internal structure size of the sample can be inferred, such as the size of molecules, the location and size of microstructures, etc.

[0063] For regularly arranged wafer structures, small angle scattering technology can accurately calculate these key dimensions by analyzing the scattering pattern. When the sample is rotated, the scattering pattern at different angles will be different, similar to the interference pattern. By analyzing the brightness, spacing and morphology of these patterns, the key dimensions of the wafer can be further accurately calculated, such as groove depth, pitch, top width, bottom width and other microstructural parameters.

[0064] The embodiments of the present application are further described in detail below in conjunction with the drawings in the specification.

[0065] Figure 1 The first exemplary embodiment of the present application provides a wafer inspection system based on X-ray small-angle diffraction, which is used to inspect wafer structures. The wafer inspection system significantly improves the measurement efficiency and accuracy through multi-angle measurement, parallel detection, automatic control and efficient data analysis, and is suitable for a variety of high-precision inspection scenarios, including:

[0066] The light source assembly 1 includes three X-ray sources, namely a first X-ray source 10a, a second X-ray source 10b, and a third X-ray source 10c, which are used to generate three X-ray beams for irradiating the sample to be tested. The X-ray source is an X-ray tube, which can generate high-energy point source type X-rays to penetrate the sample to be tested and generate scattered signals, thereby realizing the detection of the internal structure of the sample to be tested.

[0067] The rotating sample stage 2 is used to support the sample to be tested and adjust the angle of the sample to be tested during the test to achieve multi-angle measurement. Specifically, the rotating sample stage 2 is composed of a high-precision rotating mechanism, which can achieve precise adjustment of tiny angles, and the angle adjustment can reach the arc second level. The rotating sample stage 2 is connected to the control device 4, and can automatically rotate to a preset angle under the automated control of the control device 4. During the measurement process, the rotating sample stage 2 is precisely coordinated with the irradiation direction of the three X-ray sources and the receiving position of the detection device 3 to ensure that effective scattering signals can be received in each measurement.

[0068] The detection device 3 is located at the rear end of the rotating sample stage 2 and is used to receive the scattering information of the three X-ray beams passing through the sample to be tested. Specifically, the detection device 3 is located on the propagation path of the X-ray beams. The scattering information received by the detection device 3 includes scattering intensity, scattering angle and scattering pattern.

[0069] In a feasible implementation, if Figure 2 As shown, the detection device 3 can be composed of three detectors, including a first detector 30a, a second detector 30b and a third detector 30c. The first X-ray source 10a, the rotating sample stage 2 and the first detector 30a are arranged in a straight line to ensure that the X-ray beam emitted by the first X-ray source 10a can directly irradiate the sample to be tested placed on the rotating sample stage 2 and be received by the first detector 30a; the second X-ray source 10b, the rotating sample stage 2 and the second detector 30b are arranged in a straight line to ensure that the X-ray beam emitted by the second X-ray source 10b can directly irradiate the sample to be tested placed on the rotating sample stage 2 and be received by the second detector 30b; the third X-ray source 10c, the rotating sample stage 2 and the third detector 30c are arranged in a straight line to ensure that the X-ray beam emitted by the third X-ray source 10c can directly irradiate the sample to be tested placed on the rotating sample stage 2 and be received by the third detector 30c.

[0070] In a feasible implementation, since the angle of small-angle scattering is very small, the detection device 3 can be set as a planar detector, and the angle can be corrected by a physical algorithm. Specifically, the correspondence between the position of the scattered signal on the planar detector and the actual scattering angle can be calculated by a mathematical model using the known positional relationship between the X-ray source, the sample to be tested, and the planar detector. It should be noted that the detection device 3 can also use an arc detector. The design of the arc detector enables it to naturally match the scattering angle without the need for additional angle correction, thereby simplifying the measurement process and improving the measurement efficiency.

[0071] The control device 4 is used to control the light source assembly 1 , the rotating sample stage 2 and the detection device 3 .

[0072] Specifically, the control device 4 is electrically connected to the light source assembly 1, wherein a stable power supply is provided to the light source assembly 1 through a power line, and control instructions are transmitted to the light source assembly 1 through a signal control line, such as controlling the light source assembly 1 to turn on or off, adjusting the intensity of the light source assembly 1, etc.

[0073] The control device 4 is electrically connected to the rotating sample stage 2, wherein the power line provides power to the motor and other components of the rotating sample stage 2, and the signal control line controls the rotation speed, rotation angle, start and stop operations of the rotating sample stage 2.

[0074] The control device 4 is electrically connected to the detection device 3 , wherein the working state of the detection device 3 , such as detection sensitivity, data reading frequency, etc., is regulated through the control line.

[0075] The data analysis device 5 is used to receive the scattering information from the detection device 3 and obtain the structural information of the sample to be tested from the scattering information.

[0076] Specifically, the data analysis device 5 is connected to the detection device 3 via a high-speed data transmission interface, and the data analysis device 5 communicates with the detection device 3 according to a preset communication protocol to ensure that the scattering information will not be wrong or lost during the data transmission process. After receiving the scattering information, the data analysis device 5 first pre-processes the scattering information and corrects the geometric distortion of the detection device 3; then draws a relationship curve between the scattering intensity and the scattering angle, and infers the microstructure of the sample by analyzing the shape characteristics of the relationship curve; and analyzes the position and intensity of the characteristic peak in the relationship curve to obtain the structural information of the sample.

[0077] It should be noted that the distribution of the three X-ray sources in the light source assembly 1 needs to be evenly distributed at a certain angle around the sample to be tested on the rotating sample stage 2 according to the detection requirements to ensure that the three X-ray beams generated by the three X-ray sources can irradiate the sample to be tested at the same time. When the three X-ray beams are irradiated on the sample to be tested, they will be coupled together. Since the three different X-ray beams come from different directions, the scattering images they produce inside the sample to be tested will be richer and can provide more structural information; the scattering signals of the three X-ray beams inside the sample will be superimposed on each other, thereby increasing the intensity of the detection signal; by analyzing the scattering images of the three X-ray beams, the internal structure information of the sample to be tested can be accurately inferred.

[0078] In the actual implementation process, the performance parameters of the three X-ray sources, such as focal spot size, tube voltage, tube current, etc., are set to be consistent. The consistent performance parameters can ensure that the intensity and energy of the three X-ray beams are consistent, so that the sample to be tested is uniformly irradiated in different directions and a consistent scattering signal is obtained; since the characteristics of the three X-ray beams are the same, the subsequent data processing and analysis are simpler and more unified, which is convenient for extracting the structural information of the sample to be tested.

[0079] A second exemplary embodiment of the present application provides a wafer inspection system based on X-ray small-angle diffraction, such as Figure 3 As shown, there are three incident light paths between the light source assembly 1 and the rotating sample stage 2, each incident light path corresponds to an X-ray source:

[0080] Each incident light path includes a collimator 60, a first slit 61, a second slit 62 and a pre-sample slit 63 arranged along the propagation direction of the X-rays. The collimator 60 is used to convert the X-ray beam into a parallel beam. The first slit 61 is used to adjust the first divergence angle of the X-ray beam propagating along the incident light path. The second slit 62 is used to adjust the second divergence angle of the X-ray beam propagating along the incident light path. The pre-sample slit 63 is used to adjust the spot size of the X-ray beam. The incident light path refers to the light path between the X-ray source and the rotating sample stage. The first slit 61 and the second slit 62 cooperate with each other to control the size of the divergence angle of the X-ray beam. The three X-ray beams passing through the collimator 60, the first slit 61 and the second slit 62 are adjusted in spot size using the pre-sample slit 63, so that the spots formed by the three X-ray beams can be better coupled to the same position of the sample to be measured.

[0081] It should be noted that the divergence angle β in the vertical direction is equal to the ratio of the slit height value to the distance L between the first slit 61 and the second slit 62; the divergence angle α in the horizontal direction is equal to the ratio of the slit width value to the distance L between the first slit 61 and the second slit 62. The size of the light spot can be adjusted by adjusting the divergence angle of the X-ray beam. The smaller the divergence angle, the smaller the size of the light spot and the better the detail resolution.

[0082] Specifically, a collimator 60, a first slit 61, a second slit 62 and a pre-sample slit 63 are arranged on the first incident light path, the collimator 60 is used to convert the X-ray beam emitted by the first X-ray source 10a into a parallel beam, the first slit 61 is used to adjust the first divergence angle of the X-ray beam, the second slit 62 is used to adjust the second divergence angle of the X-ray beam, and the pre-sample slit 63 is used to adjust the spot size of the X-ray beam emitted by the first X-ray source 10a. The first incident light path refers to the light path between the first X-ray source 10a and the rotating sample stage 2.

[0083] A collimator 60, a first slit 61, a second slit 62 and a pre-sample slit 63 are arranged on the second incident light path. The collimator 60 is used to convert the X-ray beam emitted by the second X-ray source 10b into a parallel beam. The first slit 61 is used to adjust the first divergence angle of the X-ray beam. The second slit 62 is used to adjust the second divergence angle of the X-ray beam. The pre-sample slit 63 is used to adjust the spot size of the X-ray beam emitted by the second X-ray source 10b. The second incident light path refers to the light path between the second X-ray source 10b and the rotating sample stage 2.

[0084] A collimator 60, a first slit 61, a second slit 62 and a pre-sample slit 63 are arranged on the third incident light path. The collimator 60 is used to convert the X-ray beam emitted by the third X-ray source 10c into a parallel beam. The first slit 61 is used to adjust the first divergence angle of the X-ray beam. The second slit 62 is used to adjust the second divergence angle of the X-ray beam. The pre-sample slit 63 is used to adjust the spot size of the X-ray beam emitted by the third X-ray source 10c. The third incident light path refers to the light path between the third X-ray source 10c and the rotating sample stage 2.

[0085] A third exemplary embodiment of the present application provides a wafer inspection system based on X-ray small-angle diffraction, such as Figure 4 As shown, in order to improve the X-ray intensity of a single optical path, a collimating structure 64 is provided for each incident optical path, and the collimating structure is located between the first slit 61 and the second slit 62, and is used to control the divergence level of the X-ray beam propagating along the incident optical path. X-rays can be totally reflected by the collimating structure 64 at a very small angle, and the X-ray beam entering the collimating structure 64 can be focused to improve the intensity, thereby shortening the measurement time.

[0086] A collimating structure 64 is provided on the first incident light path, and the collimating structure 64 is located between the first slit 61 and the second slit 62. The X-ray beam emitted by the first X-ray source 10a is first converted into a parallel beam by the collimating mirror 60, and then passes through the first slit 61 for the first divergence angle adjustment, and the collimating structure 64 adjusts the divergence level of the X-ray beam adjusted by the first slit 61, and the X-ray beam adjusted by the collimating structure 64 is then propagated to the second slit 62 for the second divergence angle adjustment, and finally enters the pre-sample slit 63 for the spot size adjustment.

[0087] A collimating structure 64 is provided on the second incident light path, and the collimating structure 64 is located between the first slit 61 and the second slit 62. The X-ray beam emitted by the second X-ray source 10b is first converted into a parallel beam by the collimating mirror 60, and then passes through the first slit 61 for the first divergence angle adjustment, and the collimating structure 64 adjusts the divergence level of the X-ray beam adjusted by the first slit 61, and the X-ray beam adjusted by the collimating structure 64 is then propagated to the second slit 62 for the second divergence angle adjustment, and finally enters the pre-sample slit 63 for the spot size adjustment.

[0088] A collimating structure 64 is provided on the third incident light path, and the collimating structure 64 is located between the first slit 61 and the second slit 62. The X-ray beam emitted by the third X-ray source 10c is first converted into a parallel beam by the collimating mirror 60, and then passes through the first slit 61 for the first divergence angle adjustment, and the collimating structure 64 adjusts the divergence level of the X-ray beam adjusted by the first slit 61, and the X-ray beam adjusted by the collimating structure 64 is then propagated to the second slit 62 for the second divergence angle adjustment, and finally enters the pre-sample slit 63 for the spot size adjustment.

[0089] Another embodiment of the present application also provides a wafer inspection system based on X-ray small angle diffraction, such as Figure 5 As shown:

[0090] The collimation structure 64 includes a quartz tube switching device 65 and a plurality of collimation quartz tubes 66 with different apertures; wherein the collimation quartz tubes 66 are mounted on the quartz tube switching device 65, and the quartz tube switching device 65 is used to align the centers of different collimation quartz tubes 66 with the X-ray beam. However, the strength of the quartz tube is constant and cannot meet the strength requirements of different focal points. Different samples to be tested have different requirements for the beam divergence angle. By quickly replacing quartz tubes with different apertures through the quartz tube switching device, the experimental efficiency can be improved and the adjustment time can be reduced.

[0091] In one embodiment, if Figure 6 As shown, the quartz tube switching device 65 includes a driving unit 651 and a rotating disk 652. The edge of the rotating disk 652 is evenly provided with a plurality of mounting holes 653 of different apertures. The collimating quartz tube is fixed on the rotating disk 652 by penetrating the mounting holes 653. The output end of the driving unit 651 is connected to the central axis of the rotating disk 652. The driving unit 651 drives the rotating disk 652 to rotate so that the center of the collimating quartz tubes switched by the collimation structure is aligned with the X-ray beam. In this embodiment, six mounting holes 653 of different apertures are provided on the rotating disk 652 for installing six different collimating quartz tubes.

[0092] In one embodiment, if Figure 7As shown, the quartz tube switching device 65 includes a driving unit 651 and a moving plate 654. The moving plate 654 is provided with a plurality of mounting holes 653 of different apertures, and the collimating quartz tube 66 is fixed on the moving plate 654 by penetrating the mounting holes 653; the driving unit 651 drives the moving plate 654 to drive the collimating quartz tube 66 to move, so that the center of the collimating quartz tube 66 with different collimating structures is aligned with the X-ray beam. Among them, the moving plate 654 can move up and down or left and right. In this embodiment, six mounting holes 653 of different aperture sizes are provided on the moving plate 654 for installing six different collimating quartz tubes.

[0093] Specifically, the collimating quartz tube 66 is a quartz tube without inner coating or a collimating quartz tube with metal coating on the surface.

[0094] Optionally, when the collimating quartz tube is a collimating quartz tube with a metal coating on the surface, the metal coating includes at least one of a gold coating, a platinum coating, an aluminum coating or a nickel coating, or a multilayer metal film formed by stacking multiple metal coatings.

[0095] Another embodiment of the present application also provides a wafer inspection system based on X-ray small angle diffraction, such as Figure 8 As shown, the improvements are as follows:

[0096] Three collimators 70 are arranged at the rear end of the rotating sample stage. The three collimators 70 are arranged on three incident light paths passing through three outgoing light paths of the sample to be tested. The inlet of the collimator 70 faces the rotating sample stage 2 , and the outlet of the collimator 70 faces the detection device 3 .

[0097] It should be noted that the collimator 70 has a small entrance and a wide exit.

[0098] In one embodiment, the collimator 70 includes a plurality of blocking plates, which are arranged in a horizontal manner. Specifically, each blocking plate in the collimator 70 is arranged at equal angles with the center of the sample to be tested as the origin, and the horizontal arrangement can effectively suppress stray light incident on the detection device 3 from other light paths or scattered directions, and can effectively improve the vertical detection clarity.

[0099] In one embodiment, the collimator 70 includes a plurality of blocking plates, which are arranged in a vertical manner. The vertical arrangement can effectively improve the horizontal detection clarity.

[0100] In one embodiment, the collimator 70 includes a plurality of blocking plates, which are arranged in a cross-shaped arrangement. The bidirectional cross-shaped arrangement can improve the overall clarity.

[0101] In another embodiment of the present application, the present application also provides a wafer detection method based on X-ray small-angle diffraction, and the specific detection steps include:

[0102] Turn on the light source component;

[0103] The sample to be tested is transferred to the rotating sample stage, and the rotating sample stage is controlled to vertically raise the sample to be tested;

[0104] Controlling three X-ray sources in the light source assembly to emit X-rays to the sample to be tested;

[0105] The detection device receives the spot image generated by the sample to be tested under the irradiation of three X-ray sources;

[0106] The spot image is analyzed and processed to obtain the structural information of the sample to be tested.

[0107] In some preferred embodiments, there are three incident light paths between the light source assembly and the rotating sample stage, each incident light path corresponds to an X-ray source: each incident light path includes a collimator, a first slit, a second slit, and a pre-sample slit arranged along the propagation direction of the X-rays, the collimator is used to convert the X-ray beam emitted by the X-ray source into a parallel beam, the first slit is used to adjust the first divergence angle of the X-ray beam propagating along the incident light path, the second slit is used to adjust the second divergence angle of the X-ray beam propagating along the incident light path, and the pre-sample slit is used to adjust the X-ray beam spot size so that the spots of the three X-ray sources are coupled at the same position of the sample to be measured. After turning on the light source assembly, it also includes: adjusting the collimator, the first slit, the second slit, and the pre-sample slit between each X-ray source and the rotating sample stage.

[0108] In some preferred embodiments, each incident light path includes a collimating structure, the collimating structure includes a quartz tube switching device and a plurality of collimating quartz tubes with different apertures, and after the light source assembly is turned on, further includes:

[0109] Based on the spot size required by the sample to be tested, a target quartz tube is determined from a number of collimated quartz tubes with different apertures, and the quartz tube switching device is controlled to align the center of the target quartz tube with the X-ray beam.

[0110] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0111] Those skilled in the art can clearly understand that for the convenience and simplicity of description, only the division of the above-mentioned functional units and modules is used as an example. In actual applications, the above-mentioned functions can be distributed and completed by different functional units and modules as needed, that is, the internal structure of the system described in the present application is divided into different functional units or modules to complete all or part of the functions described above.

Claims

1. A wafer inspection system based on small-angle X-ray diffraction, characterized in that: include: A light source assembly, the light source assembly comprising three X-ray sources for generating three X-ray beams for irradiating a sample to be tested; The rotating sample stage is used to support the sample to be tested and adjust the angle of the sample to be tested during the test process to achieve multi-angle measurement; A detection device, located at the rear end of the rotating sample stage, is used to receive scattering information of three X-ray beams passing through the sample to be tested; A control device, used to control the light source assembly, the rotating sample stage and the detection device; The data analysis device is used to receive the scattering information of the detection device and obtain the structural information of the sample to be tested from the scattering information.

2. The wafer inspection system based on small-angle X-ray diffraction according to claim 1, characterized in that: There are three incident light paths between the light source assembly and the rotating sample stage, each incident light path corresponds to an X-ray source: Each incident light path includes a collimator, a first slit, a second slit and a pre-sample slit arranged along the propagation direction of the X-rays. The collimator is used to convert the X-ray beam into a parallel beam, the first slit is used to adjust the first divergence angle of the X-ray beam propagating along the incident light path, the second slit is used to adjust the second divergence angle of the X-ray beam propagating along the incident light path, and the pre-sample slit is used to adjust the spot size of the X-ray beam.

3. The wafer inspection system based on small-angle X-ray diffraction according to claim 2, characterized in that: Each incident light path includes a collimating structure, which is located between the first slit and the second slit and is used to control the divergence level of the X-ray beam propagating along the incident light path.

4. The wafer inspection system based on small-angle X-ray diffraction according to claim 3, characterized in that: The collimation structure comprises a quartz tube switching device and a plurality of collimation quartz tubes with different apertures; the collimation quartz tubes are mounted on the quartz tube switching device, and the quartz tube switching device is used to align the centers of different collimation quartz tubes with the X-ray beam.

5. The wafer inspection system based on small-angle X-ray diffraction according to claim 4, characterized in that: The quartz tube switching device comprises a driving unit and a rotating disc, the edge of the rotating disc is evenly provided with a plurality of mounting holes of different apertures, and the collimating quartz tube is fixed on the rotating disc by passing through the mounting holes; The output end of the driving unit is connected to the central axis of the rotating disk, and the driving unit drives the rotating disk to rotate so that the center of the collimating quartz tube with different collimating structures is aligned with the X-ray beam.

6. The wafer inspection system based on small-angle X-ray diffraction according to claim 4, characterized in that: The quartz tube switching device comprises a driving unit and a moving plate, the moving plate is provided with a plurality of mounting holes with different apertures, and the collimating quartz tube is fixed on the moving plate by passing through the mounting holes; The driving unit drives the moving plate to drive the collimating quartz tube to move, so that the center of the collimating quartz tube switched by the collimating structure is aligned with the X-ray beam.

7. The wafer inspection system based on small-angle X-ray diffraction according to any one of claims 4 to 6, characterized in that: The collimating quartz tube is a quartz tube without coating inside or a collimating quartz tube with metal coating on the surface.

8. The wafer inspection system based on small-angle X-ray diffraction according to claim 7, characterized in that: When the collimating quartz tube is a collimating quartz tube with a metal coating on the surface, the metal coating includes at least one of a gold coating, a platinum coating, an aluminum coating or a nickel coating, or a multilayer metal film formed by stacking multiple metal coatings.

9. The wafer inspection system based on small-angle X-ray diffraction according to claim 1, characterized in that: Three collimators are arranged at the rear end of the rotating sample stage. The three collimators are arranged on three incident light paths passing through three outgoing light paths of the sample to be tested. The inlet of the collimator faces the rotating sample stage, and the outlet of the collimator faces the detection device.

10. The wafer inspection system based on small-angle X-ray diffraction according to claim 9, characterized in that: The collimator comprises a plurality of blocking plates, and the blocking plates are arranged in a horizontal manner.

11. The wafer inspection system based on small-angle X-ray diffraction according to claim 9, characterized in that: The collimator comprises a plurality of blocking plates, and the blocking plates are arranged in a vertical manner.

12. The wafer inspection system based on small-angle X-ray diffraction according to claim 9, characterized in that: The collimator comprises a plurality of blocking plates, and the blocking plates are arranged in a cross-shaped manner.

13. A wafer detection method based on X-ray small angle diffraction, characterized in that: include: Turn on the light source component; The sample to be tested is transferred to the rotating sample stage, and the rotating sample stage is controlled to vertically raise the sample to be tested; Controlling three X-ray sources in the light source assembly to emit X-rays to the sample to be tested; The detection device receives the spot image generated by the sample to be tested under the irradiation of three X-ray sources; The light spot image is analyzed and processed to obtain the structural information of the sample to be tested.

14. The wafer detection method based on small-angle X-ray diffraction according to claim 13, characterized in that: After turning on the light source component, it also includes: Adjust the collimating mirror, the first slit, the second slit and the sample front slit between each X-ray source and the rotating sample stage.

15. The wafer detection method based on small-angle X-ray diffraction according to claim 13, characterized in that: Each incident light path includes a collimating structure, which includes a quartz tube switching device and a plurality of collimating quartz tubes with different apertures. After the light source assembly is turned on, it also includes: Based on the spot size required by the sample to be tested, a target quartz tube is determined from a number of collimated quartz tubes with different apertures, and the quartz tube switching device is controlled to align the center of the target quartz tube with the X-ray beam.

Images