Photoelectric information conversion assembly performance detection method and system

Abstract

The invention relates to the technical field of quality detection, and particularly discloses a photoelectric information conversion assembly performance detection method and system, and the method comprises the steps: obtaining an LED chip welding image, carrying out the preprocessing of the collected LED chip welding image, carrying out the feature extraction of the preprocessed LED chip welding image, obtaining the welding feature data of an LED chip, and carrying out the detection of the performance of the photoelectric information conversion assembly; performing data processing on the abnormal ratio of the weld joint spacing unit and the abnormal ratio of the LED chip welding area to obtain a quality characterization value of LED chip welding; and according to the quality characterization value of the LED chip welding, the whole LED chip welding quality state is identified, and an LED chip welding quality state grade signal is obtained. According to the quality abnormal number of the single welding seam spacing subunits of the LED chip welding and the difference between the single spacing line values of the multiple welding seam spacing subunits on the whole LED chip welding, the quality characterization value of the LED chip welding is obtained, and the LED chip welding quality state grade signal is obtained. Therefore, the welding quality of the LED chip can be identified, and the accuracy is high.

Description

Technical Field

[0001] The present invention relates to the technical field of quality detection, and in particular to a method and system for detecting the performance of a photoelectric information conversion component. Background Art

[0002] The welding of LED chips and substrates is a core process that balances electrical performance, thermal management and mechanical reliability. The electrodes (P / N poles) of the LED chips need to be connected to the substrate circuit through conductive materials to form a complete current path.

[0003] If there are welding defects between the LED chip and the substrate, it will lead to accelerated light decay, color drift, or even sudden failure. In the existing technology for inspecting the welding quality of LED chips and substrates, most of them only deal with the size and appearance defects of the welding between LED chips and substrates separately, lack the integration of factors affecting the welding quality of LED chips and substrates, and have great limitations. Summary of the invention

[0004] The purpose of the present invention is to provide a method and system for detecting the performance of a photoelectric information conversion component, by extracting features from an LED chip welding image to obtain LED chip welding feature data, and by processing the obtained weld spacing unit abnormality ratio and the LED chip welding area abnormality ratio to obtain a quality characterization value of the LED chip welding, that is, according to the difference in the number of quality abnormalities of a single weld spacing sub-unit of the LED chip welding and the monomer spacing line values ​​of multiple weld spacing sub-units in the overall LED chip welding, the LED chip welding quality is identified to solve the above-mentioned background problems.

[0005] The purpose of the present invention can be achieved through the following technical solutions: A method for detecting the performance of a photoelectric information conversion component comprises the following steps: Acquire LED chip welding images, preprocess the collected LED chip welding images, and perform feature extraction on the preprocessed LED chip welding images to obtain LED chip welding feature data; The LED chip welding characteristic data includes the weld spacing unit abnormality ratio and the LED chip welding area abnormality ratio; The quality characterization value of LED chip welding is obtained by processing the data of the abnormal ratio of the weld spacing unit and the abnormal ratio of the LED chip welding area; According to the quality characterization value of LED chip welding, the overall quality status of LED chip welding is identified to obtain the LED chip welding quality status grade signal; Among them, the LED chip welding quality status signal includes a good LED chip welding quality status signal, a general LED chip welding quality status signal, and a poor LED chip welding quality status signal; And based on the quality characterization value of the LED chip welding, spot checks are carried out on the LED chip welding to complete the evaluation of the processing trend of the LED chip welding.

[0006] As a further solution of the present invention: the LED chip welding characteristic data includes the abnormal ratio of the weld seam spacing unit and the abnormal ratio of the LED chip welding area; Record the abnormal ratio of the weld seam spacing unit as Fi; Record the abnormal ratio of the LED chip welding area as Di; Through the formula Calculate the quality characterization value DF of the LED chip welding, where df is the abnormal value of the weld seam of the LED chip welding.

[0007] As a further solution of the present invention: preset the limit values of the quality characterization value of the LED chip welding as DF1 and DF2, where DF1 < DF2; When DF < DF1, it means that the overall LED chip welding quality status is good, and a good LED chip welding quality status signal is obtained; When DF1 ≤ DF < DF2, it means that the overall LED chip welding quality status is general, and a general LED chip welding quality status signal is obtained; When DF ≥ DF2, it means that the overall LED chip welding quality status is poor, and a poor LED chip welding quality status signal is obtained.

[0008] As a further solution of the present invention: the process of obtaining the abnormal ratio of the weld seam spacing unit is as follows: Record the area formed by two adjacent weld seams and the spacing between the adjacent weld seams in the LED chip welding image as the weld seam spacing sub-unit; Obtain the weld seam spacing in the weld seam spacing sub-unit, and divide the weld seam spacing along the length direction into several weld seam spacing monomers; Integrate the monomer spacing values of all the weld seam spacing monomers to obtain a monomer spacing value group, and obtain the variance of the monomer spacing value group; Based on the variance of the monomer spacing value group, identify the non-standard weld seam spacing sub-unit and the calibrated weld seam spacing sub-unit; Calculate the ratio of the number of non-standard weld seam spacing sub-units to the total number of weld seam spacing sub-units to obtain the abnormal ratio of the weld seam spacing unit.

[0009] As a further solution of the present invention: the process of identifying the non-standard weld seam spacing sub-unit and the calibrated weld seam spacing sub-unit is as follows: If the variance value of the weld spacing monomer is greater than or equal to the variance threshold of the weld spacing monomer, the weld spacing subunit is recorded as a non-standard weld spacing subunit; If the variance value of the weld spacing monomer is less than the variance threshold of the weld spacing monomer, the weld spacing subunit is recorded as a calibrated weld spacing subunit.

[0010] As a further solution of the present invention: the process of obtaining the abnormal ratio of the LED chip welding area is as follows: The monomer spacing value group is processed according to the mean calculation method to obtain the monomer spacing mean, and recorded as the monomer spacing line value; Integrate the monomer spacing line values ​​corresponding to each weld spacing sub-unit to obtain a monomer spacing line value group; Get the standard deviation of the monomer spacing line value group and the monomer spacing line amplitude; The standard deviation of the monomer spacing line value group is recorded as D1; The amplitude of the monomer spacing line is recorded as D2; By formula The abnormal ratio Di of the LED chip welding area is calculated, where d1 and d2 are both preset proportional factors.

[0011] As a further solution of the present invention: the process of obtaining the amplitude of the monomer spacing line is: Get the maximum value in the monomer spacing line value group and mark it as Dmax; Get the minimum value in the monomer spacing line value group and mark it as Dmin; The monomer spacing line amplitude D2 is calculated using the formula D2=(Dmax-Dmin) / Dmin.

[0012] As a further solution of the present invention: the process of obtaining the weld surface abnormality value of the LED chip welding is as follows: Obtain a weld spacing subunit, and obtain all weld planes that need to be quality inspected in the weld spacing subunit; Obtain the weld direction deviation value of the LED chip and record it as Nj; Obtain the weld smoothness value of the LED chip and record it as Mj; By formula Get the weld table difference value df of the LED chip welding, where: is the monomer spacing deviation ratio.

[0013] As a further solution of the present invention: the process of obtaining the monomer spacing deviation ratio is: Acquire and integrate the monomer spacing line values ​​of all non-standard weld spacing sub-units to obtain a non-standard weld spacing sub-unit group; The non-standard weld spacing sub-unit group is processed to obtain the monomer spacing line value of the non-standard weld spacing sub-unit group; Acquire and integrate the monomer spacing line values ​​of all calibrated weld spacing sub-units to obtain a calibrated weld spacing sub-unit group; The calibration weld spacing subunit group is processed to obtain the monomer spacing line value of the calibration weld spacing subunit group; The difference between the cell spacing line value of the non-standard weld spacing sub-unit group and the cell spacing line value of the calibrated weld spacing sub-unit group is calculated, and the absolute value of the obtained difference is taken to obtain the cell spacing deviation value; The ratio of the cell spacing deviation value to the cell spacing line value of the calibrated weld spacing sub-unit group is calculated to obtain the cell spacing deviation ratio.

[0014] As a further solution of the present invention: a photoelectric information conversion component performance detection system, comprising: A feature recognition module, the feature recognition module is used to obtain an LED chip welding image, pre-process the collected LED chip welding image, and perform feature extraction on the pre-processed LED chip welding image to obtain LED chip welding feature data; The LED chip welding characteristic data includes the weld spacing unit abnormality ratio and the LED chip welding area abnormality ratio; The quality characterization module is used to process the data of the weld spacing unit abnormality ratio and the LED chip welding area abnormality ratio to obtain the quality characterization value of the LED chip welding; The grade analysis module is used to identify the overall quality status of LED chip welding according to the quality characterization value of LED chip welding, and obtain the LED chip welding quality status grade signal; The LED chip welding quality status signal includes a LED chip welding quality status good signal, a LED chip welding quality status general signal and a LED chip welding quality status poor signal; The processing estimation module performs random inspection on LED chip welding based on the quality characterization value of LED chip welding, and completes the evaluation of LED chip welding processing trend.

[0015] Beneficial effects of the present invention: The present invention obtains LED chip welding feature data by extracting features from LED chip welding images, and obtains the quality characterization value of LED chip welding by processing the obtained weld spacing unit abnormality ratio and the LED chip welding area abnormality ratio, that is, according to the difference between the quality abnormality number of a single weld spacing subunit of LED chip welding and the monomer spacing line values ​​of multiple weld spacing subunits in the overall LED chip welding, the LED chip welding quality is identified with high accuracy. In the identification of LED chip welding quality, in addition to processing the single-cell spacing value corresponding to the weld spacing subunit, the present invention also detects and processes the weld plane of the weld spacing subunit, that is, by processing the defect points on the weld surface, the weld finish value and the single-cell spacing deviation ratio, the weld surface abnormality value of the LED chip welding is obtained, and the overall quality of the LED chip welding is further identified through the weld surface abnormality value, and the quality inspection of the LED chip welding is more comprehensive, that is, through strict process monitoring and reliability testing, the high performance and long life of the LED component are effectively ensured. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The present invention will be further described below in conjunction with the accompanying drawings.

[0017] Figure 1 It is a flow chart of a method for detecting performance of a photoelectric information conversion component according to an embodiment of the present invention; Figure 2 This is a flow chart of LED chip welding quality status identification in a method for detecting performance of a photoelectric information conversion component according to an embodiment of the present invention; Figure 3 It is a flowchart of a photoelectric information conversion component performance detection system according to an embodiment of the present invention; Figure 4 It is a schematic diagram of the structure of an electronic device of a photoelectric information conversion component performance detection system according to an embodiment of the present invention. DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0019] Example 1: Please refer to Figure 1 As shown, the present invention is a method for detecting the performance of a photoelectric information conversion component, comprising the following steps: Acquire LED chip welding images, preprocess the collected LED chip welding images, and perform feature extraction on the preprocessed LED chip welding images to obtain LED chip welding feature data; The LED chip welding characteristic data includes the weld spacing unit abnormality ratio and the LED chip welding area abnormality ratio; The quality characterization value of LED chip welding is obtained by processing the data of the abnormal ratio of the weld spacing unit and the abnormal ratio of the LED chip welding area; According to the quality characterization value of LED chip welding, the overall quality status of LED chip welding is identified to obtain the LED chip welding quality status grade signal; The LED chip welding quality status signal includes a LED chip welding quality status good signal, a LED chip welding quality status general signal and a LED chip welding quality status poor signal; Based on the quality characterization value of LED chip welding, random inspection of LED chip welding is carried out to complete the evaluation of LED chip welding processing trend.

[0020] Among them, the LED chip welding image is collected by using a camera or scanner and other equipment; Since the collected LED chip welding images may have problems such as noise and uneven lighting, the preprocessing of LED chip welding images includes filtering, denoising and contrast enhancement; Computer vision algorithms are used to extract features from LED chip welding images, including but not limited to edge detection and corner detection.

[0021] Embodiment 2: LED chip welding characteristic data includes weld pitch unit abnormality ratio and LED chip welding area abnormality ratio; Among them, the process of obtaining the abnormal ratio of weld spacing unit is as follows: The area between two adjacent welds and the gap between the adjacent welds in the LED chip welding image is recorded as a weld gap subunit; Identify multiple weld spacing subunits in the LED chip welding image, specifically: Obtain the weld spacing in the weld spacing subunit, and divide the weld spacing into a plurality of weld spacing monomers along the length direction; Get the cell spacing value at the middle position of each weld spacing cell; The monomer spacing values ​​of all weld spacing monomers are integrated to obtain a monomer spacing value group; The monomer spacing value group is processed according to the variance calculation method to obtain the variance value of the weld spacing monomer; Compare the variance value of the weld spacing monomer with the variance threshold of the weld spacing monomer; If the variance value of the weld spacing monomer is greater than or equal to the variance threshold of the weld spacing monomer, the weld spacing subunit is recorded as a non-standard weld spacing subunit; If the variance value of the weld spacing monomer is less than the variance threshold of the weld spacing monomer, the weld spacing subunit is recorded as a calibrated weld spacing subunit; Obtain the number of non-standard weld spacing subunits, calibrated weld spacing subunits, and the total number of weld spacing subunits; The ratio of the number of non-standard weld spacing sub-units to the total number of weld spacing sub-units is calculated to obtain the weld spacing unit abnormality ratio; It should be noted that: under standard conditions, the single-unit spacing values ​​(weld spacing between adjacent welds) of the weld spacing monomers of each weld spacing subunit in the LED chip welding are consistent, but if there is a large variance in the multiple single-unit spacing values ​​of the same weld spacing subunit, it means that there is an abnormality in the quality of the weld spacing subunit, which will affect the welding effect of the LED chip welding, that is, the larger the weld spacing unit abnormality ratio, the more weld spacing subunits with spacing abnormalities in the LED chip welding image, and the worse the overall quality of the LED chip welding.

[0022] The process of obtaining the abnormal ratio of the LED chip welding area is as follows: The monomer spacing value group is processed according to the mean calculation method to obtain the monomer spacing mean, and recorded as the monomer spacing line value; Integrate the monomer spacing line values ​​corresponding to each weld spacing sub-unit to obtain a monomer spacing line value group; The standard deviation of the monomer spacing line value group is calculated according to the standard deviation calculation formula and recorded as D1; Get the maximum value in the monomer spacing line value group and mark it as Dmax; Get the minimum value in the monomer spacing line value group and mark it as Dmin; The monomer spacing line amplitude D2 is calculated using the formula D2=(Dmax-Dmin) / Dmin; Then through the formula The abnormal ratio Di of the LED chip welding area is calculated, where d1 and d2 are both preset proportional factors.

[0023] It should be noted that the abnormality ratio of the LED chip welding area is based on processing the monomer spacing value group of each weld spacing sub-unit to obtain the monomer spacing line value corresponding to each weld spacing sub-unit, and then the monomer spacing line values ​​of all weld spacing sub-units are data processed to identify the spacing status of each weld spacing sub-unit in the LED chip. That is, the larger the abnormality ratio of the LED chip welding area, the greater the spacing deviation of each weld spacing sub-unit in the LED chip, and the worse the quality of the LED chip welding.

[0024] The weld spacing unit abnormality ratio and the LED chip welding area abnormality ratio are processed, and the weld spacing unit abnormality ratio is recorded as Fi; By formula The quality characterization value DF of the LED chip welding is calculated, where df is the weld surface difference value of the LED chip welding; It should be noted that: the larger the quality characterization value DF of LED chip welding is, the more abnormalities there are in the quality of the individual weld spacing sub-units of LED chip welding. At the same time, there are large differences in the single-unit spacing line values ​​of multiple weld spacing sub-units in the overall LED chip welding, resulting in obvious defects in the LED chip welding structure. See also Figure 2 , the limit values ​​of the quality characterization values ​​of the LED chip welding are preset to be DF1 and DF2, where DF1<DF2; Among them, the limit values ​​DF1 and DF2 of the quality characterization values ​​of LED chip welding are empirical values, which are obtained based on experience: In the actual obtaining process, there are many groups of weld spacing unit abnormality ratios and LED chip welding area abnormality ratios. Many groups of weld spacing unit abnormality ratios and LED chip welding area abnormality ratios are processed to obtain the quality characterization values ​​of the LED chip welding of the corresponding groups. The staff identifies the LED chip welding quality status level according to the quality characterization values ​​of so many groups of LED chip welding, thereby obtaining a corresponding relationship between a quality characterization value of LED chip welding and the LED chip welding quality status level, and then derives and divides the quality characterization value of LED chip welding according to the LED chip welding quality status of the quality characterization value of LED chip welding, thereby obtaining the limit values ​​DF1 and DF2 of the quality characterization value of LED chip welding, and by comparing the limit values ​​of the quality characterization value of LED chip welding, the identification of the LED chip welding quality status level corresponding to the quality characterization value of LED chip welding is completed; When DF<DF1, it means that the LED chip welding quality is good as a whole, the weld spacing unit abnormality ratio is small and / or the LED chip welding area abnormality ratio is small, and a signal of good LED chip welding quality is obtained; When DF1≤DF<DF2, it indicates that the overall LED chip welding quality status is general, the LED chip welding area abnormality ratio and the LED chip welding area abnormality ratio are moderate, and a general LED chip welding quality status signal is obtained; When DF≥DF2, it indicates that the overall welding quality of the LED chip is poor, the weld spacing unit abnormality ratio is large and / or the LED chip welding area abnormality ratio is large, and a signal of poor welding quality of the LED chip is obtained; It should be noted that by obtaining the LED chip welding quality status level, the LED chip welding quality can be identified according to the LED chip welding quality status signal, which is convenient for the staff to manage the quality control of LED chip welding.

[0025] In a specific embodiment, the process of obtaining the weld surface abnormality value of the LED chip welding is as follows: Obtain the angle between the weld direction and the parent material surface to obtain the weld deviation angle; Calculate the ratio of the weld deviation angle to the preset deviation angle to obtain the weld direction deviation value of the LED chip; Among them, the preset deviation angle is 30°.

[0026] Use deep learning frameworks to build convolutional neural network models; Collect a large number of weld seam images corresponding to LED chips with different finishes, and annotate the actual finish value corresponding to each weld seam image to form a data set, and use the data set to train the model; In the training process, the error between the predicted smoothness value and the true value is minimized by continuously adjusting the parameters of the model; Apply the trained model to the weld seam images corresponding to the LED chips to obtain the smoothness value corresponding to each weld seam plane; The smoothness values ​​corresponding to all weld planes in the weld spacing subunit are summed and averaged to obtain the weld smoothness value of the LED chip; The weld direction deviation value of the LED chip is recorded as Nj, and the weld finish value of the LED chip is recorded as Mj; By formula Get the weld table difference value df of the LED chip welding, where: is the monomer spacing deviation ratio.

[0027] The process of obtaining the monomer spacing deviation ratio is as follows: Obtain the monomer spacing line values ​​of all non-standard weld spacing sub-units, and record the monomer spacing line values ​​of the non-standard weld spacing sub-units as Xi, where i is the number of non-standard weld spacing sub-units, i=1, 2, ..., n; Integrate the monomer spacing line values ​​of all non-standard weld spacing sub-units to obtain a non-standard weld spacing sub-unit group; According to the formula The standard deviation value Xa of the non-standard weld spacing subunit group is calculated, where Xp is the average value of the deviation groups X1, X2, X3, ..., Xn; If the standard deviation value Xa of the non-standard weld spacing subunit group is greater than or equal to the preset standard deviation value Xy, the maximum value and / or the minimum value in the non-standard weld spacing subunit group data is deleted, and the standard deviation value Xa of the non-standard weld spacing subunit group data is calculated again. When Xa is less than the preset standard deviation value Xy, the remaining data in the non-standard weld spacing subunit group are summed and averaged to obtain the monomer spacing line value of the non-standard weld spacing subunit group; Obtain the monomer spacing line values ​​of all calibration weld spacing subunits, and record the monomer spacing line values ​​of the calibration weld spacing subunits as Wi, where i is the number of calibration weld spacing subunits, i=1, 2, ..., m; Integrate the monomer spacing line values ​​of all calibrated weld spacing sub-units to obtain a calibrated weld spacing sub-unit group; According to the formula The standard deviation Wa of the calibrated weld spacing subunit group is calculated, where Wp is the average value of the deviation groups W1, W2, W3, ..., Wn; If the standard deviation value Wa of the calibration weld spacing subunit group is greater than or equal to the preset standard deviation value Wy, the maximum value and / or the minimum value in the calibration weld spacing subunit group data are deleted, and the standard deviation value Wa of the calibration weld spacing subunit group data is calculated again, until Wa is less than the preset standard deviation value Wy, the remaining data in the calibration weld spacing subunit group are summed and averaged to obtain the monomer spacing line value of the calibration weld spacing subunit group; The difference between the cell spacing line value of the non-standard weld spacing sub-unit group and the cell spacing line value of the calibrated weld spacing sub-unit group is calculated, and the absolute value of the obtained difference is taken to obtain the cell spacing deviation value; The ratio of the cell spacing deviation value to the cell spacing line value of the calibrated weld spacing sub-unit group is calculated to obtain the cell spacing deviation ratio, which is recorded as pi.

[0028] Embodiment 3: Based on the quality characterization value DF of LED chip welding calculated in the above embodiment, sampling is performed on the LED chip welding production line to obtain an LED chip welding sampling group, and the quality characterization value of each LED chip welding in the LED chip welding sampling group is collected; A plane coordinate system is established, with the processing time of LED chip welding as the X-axis and the Y-axis as the quality characterization value of LED chip welding; The quality characterization values ​​of the LED chip welding in the LED chip welding sampling group are plotted in the plane coordinate system according to the processing time sequence of the LED chip welding, and then the points corresponding to the quality characterization values ​​of all the LED chip welding in the coordinate system are connected in sequence from left to right with a smooth curve to obtain the LED chip welding quality characterization curve; If the LED chip welding quality characterization curve is linear and gradually increases in the plane coordinate system, it means that the LED chip welding processing equipment is abnormal, and an abnormal operation signal of the LED chip welding processing equipment is generated; If the LED chip welding quality characterization curve is linear and gradually decreases in the plane coordinate system, it means that the LED chip welding processing equipment is processing normally, and a normal operation signal of the LED chip welding processing equipment is generated; If the LED chip welding quality characterization curve is nonlinear in the plane coordinate system and fluctuates within a preset range, it means that the LED chip welding processing equipment is processing normally, and a normal operation signal of the LED chip welding processing equipment is generated.

[0029] Based on the abnormal operation signal of the LED chip welding processing equipment, the abnormal cause of the LED chip welding processing equipment is repaired to ensure the processing quality of the LED chip welding.

[0030] Among them, LED chip welding processing equipment includes but is not limited to weld pipe processing equipment and weld sheet press / rolling machine.

[0031] Example 4: Please refer to Figure 3 As shown, the present invention is a photoelectric information conversion component performance detection system, comprising: A feature recognition module, the feature recognition module is used to obtain an LED chip welding image, pre-process the collected LED chip welding image, and perform feature extraction on the pre-processed LED chip welding image to obtain LED chip welding feature data; The LED chip welding characteristic data includes the weld spacing unit abnormality ratio and the LED chip welding area abnormality ratio; The quality characterization module is used to process the data of the weld spacing unit abnormality ratio and the LED chip welding area abnormality ratio to obtain the quality characterization value of the LED chip welding; The grade analysis module is used to identify the overall quality status of LED chip welding according to the quality characterization value of LED chip welding, and obtain the LED chip welding quality status grade signal; The LED chip welding quality status signal includes a LED chip welding quality status good signal, a LED chip welding quality status general signal and a LED chip welding quality status poor signal; The processing estimation module performs random inspection on LED chip welding based on the quality characterization value of LED chip welding, and completes the evaluation of LED chip welding processing trend.

[0032] Example 5: Please refer to Figure 4 As shown, the present invention is a structural schematic diagram of an electronic device.

[0033] The electronic device may include a processor, a memory, a bus and a communication interface, and may also include a computer program stored in the memory and executable on the processor, such as a program for a method for detecting the performance of an optoelectronic information conversion component.

[0034] Wherein, the memory includes at least one type of readable storage medium, and the readable storage medium includes flash memory, mobile hard disk, multimedia card, card-type memory (for example: SD or DX memory, etc.), magnetic memory, disk, optical disk, etc. The memory may be an internal storage unit of an electronic device in some embodiments, such as a mobile hard disk of the electronic device. The memory may also be an external storage device of an electronic device in other embodiments, such as a plug-in mobile hard disk, a smart memory card (SmartMediaCard, SMC), a secure digital (SecureDigital, SD) card, a flash card (FlashCard), etc. equipped on the electronic device. Further, the memory may also include both an internal storage unit of the electronic device and an external storage device. The memory may be used not only to store application software and various types of data installed in the electronic device, such as the code of a processing program based on a method for detecting the performance of an optoelectronic information conversion component, but also to temporarily store data that has been output or is to be output.

[0035] In some embodiments, the processor may be composed of an integrated circuit, for example, a single packaged integrated circuit, or a plurality of packaged integrated circuits with the same or different functions, including one or more central processing units (CPUs), microprocessors, digital processing chips, graphics processors, and a combination of various control chips, etc. The processor is the control core (Control Unit) of the electronic device, and uses various interfaces and lines to connect the various components of the entire electronic device, and executes or executes the programs or modules stored in the memory (such as a processing program for a method for detecting the performance of an optoelectronic information conversion component, etc.), and calls the data stored in the memory to execute various functions of the electronic device and process data.

[0036] The bus may be a peripheral component interconnect (PCI) bus or an extended industry standard architecture (EISA) bus, etc. The bus may be divided into an address bus, a data bus, a control bus, etc. The bus is configured to realize connection and communication between the memory and at least one processor, etc.

[0037] Figure 4 Only an electronic device with components is shown, and those skilled in the art will understand that Figure 4 The structure shown does not constitute a limitation on the electronic device, and may include fewer or more components than shown in the figure, or combine certain components, or arrange the components differently.

[0038] The above formulas are all dimensionless and numerical calculations. The formula is a formula for the most recent real situation obtained by collecting a large amount of data and performing software simulation. The preset parameters in the formula are set by technicians in this field according to actual conditions.

[0039] The above is a detailed description of an embodiment of the present invention, but the content is only a preferred embodiment of the present invention and cannot be considered to limit the scope of implementation of the present invention. All equivalent changes and improvements made within the scope of the present invention should still fall within the scope of the patent coverage of the present invention.

Claims

1. A method for detecting the performance of a photoelectric information conversion component, characterized in that: Including the following steps: Obtain the LED chip welding image, mark the area with two adjacent weld seams and the spacing formed between the adjacent weld seams in the LED chip welding image as the weld seam spacing subunit, and perform feature extraction on the LED chip welding image to obtain the LED chip welding feature data; Among them, the LED chip welding feature data includes the weld seam spacing unit abnormal ratio and the LED chip welding area abnormal ratio; Divide the weld seam spacing of the weld seam spacing subunit along the length direction into several weld seam spacing monomers, and integrate them to obtain a monomer spacing value group. Divide the weld seam spacing subunit into a non-standard weld seam spacing subunit and a calibrated weld seam spacing subunit according to the variance of the monomer spacing value group; The weld seam spacing unit abnormal ratio is the ratio of the number of non-standard weld seam spacing subunits to the total number of weld seam spacing subunits; Integrate the means of the monomer spacing value groups corresponding to all weld seam spacing subunits to obtain a monomer spacing line value group, and process the standard deviation and the monomer spacing line amplitude of the monomer spacing line value group to obtain the LED chip welding area abnormal ratio; Through data processing of the weld seam spacing unit abnormal ratio and the LED chip welding area abnormal ratio, obtain the quality characterization value of the LED chip welding; Identify the overall quality state of the LED chip welding according to the quality characterization value of the LED chip welding.

2. A method for detecting the performance of an optoelectronic information conversion component according to claim 1, characterized in that: The LED chip welding feature data includes the weld seam spacing unit abnormal ratio and the LED chip welding area abnormal ratio; Denote the weld seam spacing unit abnormal ratio as Fi; Denote the LED chip welding area abnormal ratio as Di; By formula The quality characterization value DF of the LED chip welding is calculated, where df is the weld quality characterization value of the LED chip welding.

3. A method for detecting the performance of an optoelectronic information conversion component according to claim 2, characterized in that: Preset the limit values of the quality characterization value of the LED chip welding as DF1 and DF2, where DF1 < DF2; When DF < DF1, it indicates that the overall quality state of the LED chip welding is good, and obtain the good signal of the LED chip welding quality state; When DF1 ≤ DF < DF2, it indicates that the overall quality state of the LED chip welding is average, and obtain the average signal of the LED chip welding quality state; When DF ≥ DF2, it indicates that the overall quality state of the LED chip welding is poor, and obtain the poor signal of the LED chip welding quality state.

4. A method for detecting the performance of an optoelectronic information conversion component according to claim 1, characterized in that: The identification process of the non-standard weld seam spacing subunit and the calibrated weld seam spacing subunit is as follows: If the variance value of the weld seam spacing monomer is greater than or equal to the variance threshold of the weld seam spacing monomer, mark the weld seam spacing subunit as a non-standard weld seam spacing subunit; If the variance value of the weld seam spacing monomer is less than the variance threshold of the weld seam spacing monomer, mark the weld seam spacing subunit as a calibrated weld seam spacing subunit.

5. A method for detecting the performance of an optoelectronic information conversion component according to claim 2, characterized in that: The obtaining process of the LED chip welding area abnormal ratio is as follows: Denote the standard deviation of the monomer spacing line value group as D1; Denote the monomer spacing line amplitude as D2; By formula The abnormal ratio Di of the LED chip welding area is calculated, where d1 and d2 are both preset proportional factors.

6. A method for detecting the performance of an optoelectronic information conversion component according to claim 5, characterized in that: The obtaining process of the monomer spacing line amplitude is as follows: Obtain the maximum value in the monomer spacing line value group and mark it as Dmax; Obtain the minimum value in the monomer spacing line value group and mark it as Dmin; Calculate and obtain the monomer spacing line amplitude D2 using the formula D2 = (Dmax - Dmin) / Dmin.

7. A method for detecting the performance of an optoelectronic information conversion component according to claim 2, characterized in that: The obtaining process of the weld surface abnormal value of the LED chip welding is as follows: Obtain the weld seam spacing subunit, and obtain all the weld planes to be quality inspected within the weld seam spacing subunit; Obtain the weld direction deviation value of the LED chip and denote it as Nj; Obtain the weld smoothness value of the LED chip and record it as Mj; By formula Get the weld table difference value df of the LED chip welding, where: is the monomer spacing deviation ratio.

8. A method for detecting the performance of an optoelectronic information conversion component according to claim 7, characterized in that: The process of obtaining the monomer spacing deviation ratio is as follows: Acquire and integrate the monomer spacing line values ​​of all non-standard weld spacing sub-units to obtain a non-standard weld spacing sub-unit group; The non-standard weld spacing sub-unit group is processed to obtain the monomer spacing line value of the non-standard weld spacing sub-unit group; Acquire and integrate the monomer spacing line values ​​of all calibrated weld spacing sub-units to obtain a calibrated weld spacing sub-unit group; The calibration weld spacing subunit group is processed to obtain the monomer spacing line value of the calibration weld spacing subunit group; The difference between the cell spacing line value of the non-standard weld spacing sub-unit group and the cell spacing line value of the calibrated weld spacing sub-unit group is calculated, and the absolute value of the obtained difference is taken to obtain the cell spacing deviation value; The ratio of the cell spacing deviation value to the cell spacing line value of the calibrated weld spacing sub-unit group is calculated to obtain the cell spacing deviation ratio.

9. A photoelectric information conversion component performance detection system, characterized in that: The photoelectric information conversion component performance detection system is used to execute the method described in any one of claims 1 to 8 above.

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