Substrate back surface processing method and substrate supporting apparatus

Abstract

The invention discloses a substrate back surface processing method and a substrate supporting device. The method comprises the following steps that S1, a substrate is placed at a first position above a supporting face of a substrate supporting device, and when the substrate is located at the first position, the lower surface of the substrate is higher than the upper surface of a boss of the substrate supporting device; s2, first gas with first flow is supplied to the multiple Bernoulli holes in the supporting face, so that the substrate sinks to a second position from a first position above the supporting face, and when the substrate is located at the second position, at least part of the substrate is located below the upper surface of the boss; s3, the base plate is clamped by a plurality of positioning pins of the base plate supporting device so that the base plate can be kept at the second position; s4, increasing the flow of the first gas from the first flow to a second flow; and S5, when the first gas is supplied at the second flow rate, performing back surface treatment on the substrate. The processing liquid on the back surface of the substrate can be effectively prevented from overflowing to the front surface of the substrate, and the lateral erosion problem of the front surface of the substrate is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a substrate backside processing method and a substrate supporting device. Background Art

[0002] In the substrate backside processing process, the substrate is placed on the Bernoulli chuck, with the backside (non-device side) of the substrate facing upward and the front side (device side) facing downward to the Bernoulli chuck. The Bernoulli chuck absorbs and supports the substrate in a non-contact manner. When processing the backside of the substrate, the processing liquid is sprayed onto the backside of the substrate to process the backside of the substrate. In this process, there is a problem that the processing liquid overflows to the front side of the substrate and causes side etching in the edge area of ​​the front side of the substrate. If the side etching size is large, it will cause damage to the front side pattern of the substrate.

[0003] Therefore, it is necessary to provide a substrate backside processing method and a substrate supporting device to improve the side erosion problem of the substrate front side. Summary of the invention

[0004] The object of the present invention is to provide a substrate back side processing method and a substrate supporting device to solve the problem in the prior art that the processing liquid on the back side of the substrate will overflow to the front side of the substrate and cause side corrosion on the front side of the substrate.

[0005] In order to solve the above problems, the present application proposes a method for processing the back side of a substrate, comprising the following steps:

[0006] Step S1: placing the substrate at a first position above the supporting surface of the substrate supporting device, wherein when the substrate is at the first position, the lower surface of the substrate is higher than the upper surface of the boss of the substrate supporting device, wherein the boss protrudes upward at the periphery of the supporting surface;

[0007] Step S2: supplying a first gas having a first flow rate to a plurality of Bernoulli holes on the support surface, so that the substrate sinks from a first position above the support surface to a second position, and when the substrate is at the second position, at least a portion of the substrate is located below the upper surface of the boss;

[0008] Step S3: enabling a plurality of positioning pins of the substrate supporting device to clamp the substrate to keep the substrate at the second position;

[0009] Step S4: increasing the flow rate of the first gas from the first flow rate to the second flow rate;

[0010] Step S5: performing backside processing on the substrate while the plurality of Bernoulli holes supply the first gas at a second flow rate.

[0011] In one embodiment of the present application, in step S1, a second gas is supplied to a plurality of lifting holes on the support surface to keep the substrate at a first position above the support surface; and

[0012] In step S2, after the first gas having a first flow rate is supplied, the supply of the second gas is stopped.

[0013] In one embodiment of the present application, after step S5, step S6 is also included: after the back side processing is completed, the second gas is supplied to the multiple lifting holes again, and the supply of the first gas to the multiple Bernoulli holes is stopped. After the second gas is supplied, the multiple positioning pins release the substrate to keep the substrate at a third position above the supporting surface. When the substrate is maintained at the third position, the lower surface of the substrate is higher than the upper surface of the boss; step S7: remove the substrate from above the supporting surface and stop supplying the second gas.

[0014] In one embodiment of the present application, when the substrate is in the second position, the lower surface of the substrate is lower than the upper surface of the boss, and the upper surface of the substrate is not lower than the upper surface of the boss.

[0015] In one embodiment of the present application, in step S2, when the substrate is at the second position, 1 / 4 to 3 / 4 of the thickness of the substrate is located below the upper surface of the boss.

[0016] In one embodiment of the present application, the first flow rate is 50 lpm to 150 lpm.

[0017] In one embodiment of the present application, the second flow rate is 200 lpm to 400 lpm.

[0018] The present application proposes a substrate supporting device, comprising:

[0019] A rotating chuck has a supporting surface for supporting the substrate, and a first annular area is set on the supporting surface;

[0020] A boss protrudes upwards on the periphery of the supporting surface;

[0021] a groove, defined by the boss and the support surface, for receiving the substrate;

[0022] a plurality of Bernoulli holes disposed in the first annular region for supplying a first gas toward the substrate;

[0023] A plurality of positioning pins are arranged around the supporting surface, and the plurality of positioning pins are respectively provided with positioning grooves for clamping with the outer peripheral edge of the substrate to clamp the substrate.

[0024] In one embodiment of the present application, the inner side wall of the boss is a straight surface.

[0025] In one embodiment of the present application, the boss and the rotating chuck are integrally formed.

[0026] In one embodiment of the present application, the positioning groove of each positioning pin is provided with an oblique opening, and the oblique opening is used for clamping with the outer peripheral edge of the substrate.

[0027] In one embodiment of the present application, a first flow regulating element and a controller are further included. The first flow regulating element is in communication with a plurality of Bernoulli holes. The controller is connected to the first flow regulating element and a plurality of positioning pins and is configured as follows:

[0028] Controlling the first flow regulating element to set the flow rate of the first gas supplied by the plurality of Bernoulli holes at a first flow rate, so that the substrate sinks from a first position above the supporting surface to a second position, and when the substrate is at the second position, at least a part of the substrate is located below the upper surface of the boss;

[0029] causing the plurality of positioning pins to clamp the substrate to hold the substrate in the second position;

[0030] The first flow regulating element is controlled to increase the flow of the first gas from the first flow to a second flow, wherein the back side of the substrate is processed while the first gas is supplied by the plurality of Bernoulli holes at the second flow.

[0031] In one embodiment of the present application, it also includes:

[0032] A second annular region is set on the support surface of the rotating chuck and is located inside the first annular region;

[0033] A plurality of lifting holes are disposed in the second annular region for supplying a second gas toward the substrate.

[0034] In one embodiment of the present application, a second flow regulating element is further included, the second flow regulating element is communicated with the plurality of lifting holes, and the controller is connected to the second flow regulating element and is configured as follows:

[0035] controlling the second flow regulating element to regulate the flow of the second gas supplied by the plurality of lifting holes so that the substrate is maintained at a first position above the supporting surface; and

[0036] After controlling the first flow regulating element to supply the first gas with the first flow rate, controlling the second flow regulating element to stop supplying the second gas.

[0037] As described above, the present invention utilizes the boss of the substrate supporting device and adjusts the height of the substrate by supplying a first gas with a first flow rate to a plurality of Bernoulli holes, so that the substrate can be at least partially located below the upper surface of the boss, thereby reducing the distance between the substrate and the supporting surface of the substrate supporting device; due to the boss design, the air outlet area between the edge of the substrate and the supporting surface is also reduced, thereby increasing the air outlet pressure; in addition, the height of the substrate is limited by a plurality of positioning pins, so that even if the flow rate of the first gas is increased from the first flow rate to the second flow rate, the substrate can still maintain a fixed height, and the large-flow first gas always surrounds the entire circumference of the substrate, thereby effectively preventing the processing liquid on the upper surface of the substrate from overflowing to the lower surface of the substrate, thereby improving the side erosion problem of the lower surface of the substrate.

[0038] Other features and corresponding beneficial effects of the present invention are described in the latter part of the specification, and it should be understood that at least part of the beneficial effects become obvious from the description in the specification of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 is a cross-sectional view of a substrate support device according to an embodiment of the present application;

[0040] Figure 2 is a schematic top view of a rotary chuck according to an embodiment of the present application;

[0041] Figure 3a and Figure 3b This is a schematic diagram of the shape of the oblique mouth of an embodiment of the present application;

[0042] Figure 4 is a structural block diagram of a control part in a substrate supporting device according to an embodiment of the present application;

[0043] Figure 5 This is a schematic diagram of flow rate regulation of the first gas and the second gas in one embodiment of the present application;

[0044] Figure 6 is a partial cross-sectional view of a substrate support device; and

[0045] Figure 7 is a partial cross-sectional view of another substrate support device. DETAILED DESCRIPTION

[0046] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may extend based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description. It should be noted that the embodiments of the present invention and the features in the embodiments can be combined with each other without conflict.

[0047] It should be noted that in this specification, similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings.

[0048] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0049] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0050] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0051] In order to make the objectives, technical solutions and advantages of the present invention more clear, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

[0052] Figure 1 is a cross-sectional view of a substrate supporting device according to an embodiment of the present application. Figure 2 is a top view schematic diagram of a rotary chuck according to an embodiment of the present application. Figure 1 and Figure 2 The present application provides a substrate supporting device for performing backside processing on a substrate 100. The substrate supporting device includes a rotating chuck 200, a boss 210, a plurality of Bernoulli holes 220, a plurality of positioning pins 230 and a groove 250.

[0053] The rotating chuck 200 has a supporting surface 201 for supporting the substrate 100. The boss 210 and the rotating chuck 200 are integrally formed, and the boss 210 protrudes upward from the outer periphery of the supporting surface 201 of the rotating chuck 200 in a ring shape. The upper surface 2101 of the boss 210 is higher than the supporting surface 201, and the inner side wall of the boss 210 and the supporting surface 201 together form a groove 250 for accommodating the substrate 100. In some embodiments, the inner side wall of the boss 210 is a straight surface, which can prevent the substrate 100 from contacting the inner side wall of the boss 210 when sinking, thereby affecting the front side of the substrate 100.

[0054] A first annular region 202 is set on the support surface 201, and a plurality of Bernoulli holes 220 form a circle arranged in the first annular region 202, which is used to supply a first gas to the substrate 100 to adjust the distance between the substrate 100 and the support surface 201. This makes at least a part of the substrate 100 located below the upper surface 2101 of the boss 210, that is, the distance between the substrate 100 and the support surface 201 is smaller than the height of the groove 250.

[0055] A plurality of positioning pins 230 are arranged around the support surface 201, and a plurality of positioning pins 230 are provided with positioning grooves 231 for engaging with the outer peripheral edge of the substrate 100 to clamp the substrate 100. Specifically, the positioning grooves 231 can limit the height of the substrate 100 blown up by the first gas, so that the substrate 100 maintains a fixed height. In some embodiments, the positioning grooves 231 are arranged to extend around the outer periphery of the positioning pins 230. In some embodiments, the positioning grooves 231 of each positioning pin 230 are provided with an oblique opening, see Figure 3a and Figure 3b , Figure 3a It shows that the shape of the bevel can be angular, Figure 3b The shape of the bevel can be an arc, and the present invention does not limit the shape of the bevel. The bevel is used to engage with the outer edge of the substrate 100, so that the height of the substrate 100 blown up by the first gas is more consistent, and to a certain extent, further ensures that the center of the substrate 100 is aligned with the center of the support surface 201.

[0056] Figure 41 shows a block diagram of the control part in the substrate support device. In some embodiments, the substrate support device further includes a first flow regulating element 310 and a controller 400. The first flow regulating element 310 is in communication with the plurality of Bernoulli holes 220. The controller 400 is connected to the first flow regulating element 310. The controller 400 controls the first flow regulating element 310 to regulate the flow of the first gas supplied by the plurality of Bernoulli holes 220. The first flow regulating element 310 may be an MFC (mass flow controller). The controller 400 is also connected to the plurality of positioning pins 230 to control the plurality of positioning pins 230 to clamp or release the substrate 100.

[0057] In some embodiments, reference Figure 2 The substrate support device further includes a second annular region 203 and a plurality of lifting holes 240. The second annular region 203 is set on the support surface 201 of the rotary chuck 200. The second annular region 203 is concentrically distributed with the first annular region 202 and is located inside the first annular region 202. The plurality of lifting holes 240 form a circle and are arranged in the second annular region 203, and are used to supply the second gas to the substrate 100, so as to keep the substrate 100 at a position where the lower surface of the substrate 100 is higher than the upper surface of the boss 210, so as to facilitate the robot to take and place the substrate 100 from the substrate support device.

[0058] In some embodiments, reference Figure 4 The substrate supporting device further includes a second flow regulating element 320, the second flow regulating element 320 is communicated with the plurality of lifting holes 240, the controller 400 is connected with the second flow regulating element 320, and the controller 400 controls the second flow regulating element 320 to regulate the flow of the second gas supplied by the plurality of lifting holes 240. The second flow regulating element 320 may be a mass flow controller (MFC).

[0059] In addition to the above-mentioned substrate support device, the present application also proposes a substrate backside processing method that can be applied to the substrate support device. Figure 1 and Figure 5 , the substrate back side processing method comprises the following steps:

[0060] Step S1: Place the substrate 100 at a first position above the supporting surface 201 of the substrate supporting device (more specifically, the rotating chuck 200). When the substrate 100 is at the first position, the lower surface 101 of the substrate 100 is higher than the upper surface 2101 of the boss 210 of the substrate supporting device, wherein the boss 210 protrudes upward at the periphery of the supporting surface 201. The back surface (non-device surface) of the substrate 100 faces upward, and the front surface (device surface) of the substrate 100 faces downward.

[0061] It should be noted that the lower surface 101 of the substrate 100 mentioned herein is the front side of the substrate 100 , and the upper surface 102 of the substrate 100 is the back side of the substrate 100 .

[0062] Step S2: supplying a first gas having a first flow rate to the plurality of Bernoulli holes 220 on the support surface 201, so that the substrate 100 sinks from a first position above the support surface 201 to a second position (eg, Figure 1 ), when the substrate 100 is in the second position, at least a portion of the substrate 100 is located below the upper surface 2101 of the boss 210. In some embodiments, when the substrate 100 is in the second position, the lower surface 101 of the substrate 100 is lower than the upper surface 2101 of the boss 210, and the upper surface 102 of the substrate 100 is not lower than the upper surface 2101 of the boss 210. Preferably, the upper surface 102 of the substrate 100 is higher than the upper surface 2101 of the boss 210. For example, in some embodiments, when the substrate 100 is in the second position, 1 / 4 to 3 / 4 of the thickness of the substrate 100 is located below the upper surface 2101 of the boss 210. In addition, the first gas is an inert gas or nitrogen.

[0063] Step S3: The plurality of positioning pins 230 of the substrate supporting device clamp the substrate 100 to keep the substrate 100 at the second position so that the height of the substrate 100 remains unchanged, that is, the distance between the substrate 100 and the supporting surface 201 remains unchanged.

[0064] Step S4: increasing the flow rate of the first gas from the first flow rate to the second flow rate.

[0065] Step S5: While the plurality of Bernoulli holes 220 supply the first gas at the second flow rate, the substrate 100 is subjected to backside treatment. Specifically, at least one nozzle moves above the substrate 100 and sprays the treatment liquid onto the upper surface 102 of the substrate 100. At the same time, during the backside treatment, the first gas with the second flow rate always surrounds the entire circumference of the substrate 100, effectively preventing the treatment liquid from overflowing from the upper surface 102 of the substrate 100 to the edge area of ​​the lower surface 101 of the substrate 100, thereby improving the side erosion problem of the lower surface of the substrate 100. The backside treatment of the substrate 100 includes etching, cleaning, and drying the substrate 100.

[0066] Figure 6 shows a partial cross-sectional view of a substrate support device, Figure 7 A partial cross-sectional view of another substrate support device is shown. Figure 6 When the substrate 100 is subjected to back surface treatment, if the lower surface 101 of the substrate 100 is higher than the upper surface 2101 of the boss 210, the distance between the boss 210 and the edge of the substrate 100 will increase, and there will be a risk that the processing liquid will overflow to the lower surface 101 of the substrate 100; Figure 7If the substrate 100 is completely lower than the upper surface 2101 of the boss 210, on the one hand, the processing liquid on the upper surface 102 of the substrate 100 will splash onto the inner side wall of the boss 210, causing splashing and affecting the normal backside processing process. On the other hand, there is a risk that the lower surface 101 of the substrate 100 will contact the supporting surface 201 of the substrate supporting device. Therefore, preferably, Figure 1 , the present application uses a first gas with a first flow rate to control the substrate 100 at the second position, so that the lower surface 101 of the substrate 100 is lower than the upper surface 2101 of the boss 210, and the upper surface 102 of the substrate 100 is higher than the upper surface 2101 of the boss 210, so that the blowing height of the substrate 100 can be reduced, and the air outlet pressure between the edge of the substrate 100 and the boss 210 can be increased, which is conducive to preventing the processing liquid on the upper surface 102 of the substrate 100 from overflowing to the lower surface 101 of the substrate 100. In addition, after clamping the substrate 100, increasing the flow rate of the first gas to the second flow rate is also conducive to preventing the processing liquid on the upper surface 102 of the substrate 100 from overflowing to the lower surface 101 of the substrate 100.

[0067] In some embodiments, the first gas has a first flow rate of 50 lpm to 150 lpm, preferably 50 lpm, 100 lpm, or 150 lpm.

[0068] In some embodiments, the second flow rate of the first gas is 200 lpm to 400 lpm, preferably 300 lpm.

[0069] Refer again Figure 1 and Figure 5 In step S1, a second gas is supplied to a plurality of lifting holes 240 on the supporting surface 201 so that the substrate 100 is maintained at a first position above the supporting surface 201 of the substrate supporting device. Specifically, during the process of supplying the second gas to the plurality of lifting holes 240, a robot grabs a substrate 100 and places it above the supporting surface 201 of the substrate supporting device, aligns the center of the substrate 100 with the center of the supporting surface 201, and then the robot moves away. Under the action of the second gas, the substrate 100 is maintained at the first position above the supporting surface 201 and is suspended without sinking to the bottom. The second gas is an inert gas or nitrogen. In other embodiments, a robot can be used to directly place the substrate 100 at the first position above the supporting surface 201, or the first gas can be supplied to a plurality of Bernoulli holes 220, so that the substrate 100 is maintained at the first position above the supporting surface 201 under the action of the first gas.

[0070] In step S2, after the first gas having a first flow rate is supplied, the supply of the second gas is stopped.

[0071] In some embodiments, after step S5, the method further includes:

[0072] Step S6: After the backside treatment is completed, the second gas is supplied to the plurality of lifting holes 240 again, and the first gas is stopped from being supplied to the plurality of Bernoulli holes 220. In some embodiments, after the backside treatment is completed, the second gas is supplied first, and then the first gas is stopped. In other embodiments, after the backside treatment is completed, the supply of the second gas can be started simultaneously with the supply of the first gas being stopped. During this process, the plurality of positioning pins 230 are still in a state of clamping the substrate 100, so when the supply of the second gas is started and the supply of the first gas is stopped simultaneously, the substrate 100 will not sink to the bottom (the lower surface 101 of the substrate 100 touches the surface of the support surface 201) due to differences in hardware execution or other factors. After the second gas is supplied, the plurality of positioning pins 230 release the substrate 100, so that the substrate 100 is maintained at a third position above the support surface 201 of the substrate support device. When the substrate 100 is maintained at the third position, the lower surface 101 of the substrate 100 is higher than the upper surface 2101 of the boss 210, and the robot takes away the substrate 100. In the present application, the flow rates of the second gas supplied in step S1 and step S6 are the same, for example, 300 lpm, and the heights of the substrate 100 in the first position and the third position are the same, that is, the first position and the third position are the same position. It should be noted that in some embodiments, the flow rates of the second gas in step S1 and step S6 are different, and accordingly, the heights of the first position and the third position are different. It should also be noted that in Figure 5 In the example shown, the flow rate of the second gas supplied in step S1 and step S6 is the same as the second flow rate of the first gas. In other examples, the two may be different.

[0073] Step S7: The robot arm removes the substrate 100 from above the supporting surface 201 and stops supplying the second gas.

[0074] The substrate processing method of the present application supplies the second gas to the multiple lifting holes 240 only when the robot takes and places the substrate 100 from above the supporting surface 201. During the back side processing of the substrate 100, the first gas is supplied to the multiple Bernoulli holes 220, and the supply of the second gas to the multiple lifting holes 240 is stopped, rather than always supplying the first gas and the second gas at the same time. This can not only simplify the back side processing process but also meet the process requirements.

[0075] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for processing the back side of a substrate, characterized in that: The following steps are involved: Step S1: placing a substrate at a first position above a supporting surface of a substrate supporting device, wherein when the substrate is at the first position, a lower surface of the substrate is higher than an upper surface of a boss of the substrate supporting device, wherein the boss protrudes upwardly from the periphery of the supporting surface; Step S2: supplying a first gas having a first flow rate to a plurality of Bernoulli holes on the support surface, so that the substrate sinks from the first position above the support surface to a second position, and when the substrate is at the second position, at least a portion of the substrate is located below the upper surface of the boss; Step S3: enabling a plurality of positioning pins of the substrate supporting device to clamp the substrate to keep the substrate at the second position; Step S4: increasing the flow rate of the first gas from the first flow rate to a second flow rate; Step S5: performing backside processing on the substrate while the plurality of Bernoulli holes supply the first gas at the second flow rate.

2. The method for processing the back side of a substrate according to claim 1, wherein: In the step S1, a second gas is supplied to a plurality of lifting holes on the support surface to keep the substrate at the first position above the support surface; and In the step S2, after the first gas having a first flow rate is supplied, the supply of the second gas is stopped.

3. The method for processing the back side of a substrate according to claim 2, wherein: After step S5, the method further includes: Step S6: after the backside processing is completed, the second gas is supplied to the plurality of lifting holes again, and the first gas is stopped from being supplied to the plurality of Bernoulli holes. After the second gas is supplied, the plurality of positioning pins release the substrate so that the substrate is maintained at a third position above the supporting surface. When the substrate is maintained at the third position, the lower surface of the substrate is higher than the upper surface of the boss. Step S7: removing the substrate from above the supporting surface and stopping supplying the second gas.

4. The method for processing the back side of a substrate according to claim 1, wherein: When the substrate is at the second position, the lower surface of the substrate is lower than the upper surface of the boss, and the upper surface of the substrate is not lower than the upper surface of the boss.

5. The method for processing the back side of a substrate according to claim 1, wherein: In the step S2, when the substrate is at the second position, 1 / 4 to 3 / 4 of the thickness of the substrate is located below the upper surface of the boss.

6. The method for processing the back side of a substrate according to claim 1, wherein: The first flow rate is 50 lpm to 150 lpm.

7. The method for processing the back side of a substrate according to claim 1, wherein: The second flow rate is 200 lpm to 400 lpm.

8. A substrate supporting device, characterized in that: include: A rotating chuck has a supporting surface for supporting a substrate, wherein a first annular area is set on the supporting surface; A boss protrudes upwardly from the periphery of the support surface; a groove, defined by the boss and the support surface, for accommodating the substrate; a plurality of Bernoulli holes disposed in the first annular region for supplying a first gas toward the substrate; as well as A plurality of positioning pins are arranged around the supporting surface, and the plurality of positioning pins are respectively provided with positioning grooves for engaging with the outer peripheral edge of the substrate to clamp the substrate.

9. The substrate supporting device according to claim 8, characterized in that: The inner side wall of the boss is a straight surface.

10. The substrate supporting device according to claim 8, characterized in that: The boss and the rotating chuck are integrally formed.

11. The substrate supporting device according to claim 8, characterized in that: The positioning groove of each positioning pin is provided with an oblique opening, and the oblique opening is used for clamping with the outer peripheral edge of the substrate.

12. The substrate supporting device according to claim 8, wherein: The invention also includes a first flow regulating element and a controller, wherein the first flow regulating element is in communication with the plurality of Bernoulli holes, and the controller is connected to the first flow regulating element and the plurality of positioning pins and is configured as follows: controlling the first flow regulating element to set the flow rate of the first gas supplied by the plurality of Bernoulli holes at a first flow rate, so that the substrate sinks from a first position above the supporting surface to a second position, and when the substrate is at the second position, at least a part of the substrate is located below the upper surface of the boss; enabling the plurality of positioning pins to clamp the substrate to maintain the substrate at the second position; The first flow regulating element is controlled to increase the flow of the first gas from the first flow to a second flow, wherein the substrate is back-processed while the plurality of Bernoulli holes supply the first gas at the second flow.

13. The substrate supporting device according to claim 12, wherein: Also includes: a second annular region, which is set on the support surface of the rotary chuck and is located inside the first annular region; A plurality of lifting holes are disposed in the second annular region for supplying a second gas toward the substrate.

14. The substrate supporting device according to claim 13, wherein: The controller further comprises a second flow regulating element, the second flow regulating element being in communication with the plurality of lifting holes, and the controller being connected with the second flow regulating element and configured as follows: controlling the second flow regulating element to regulate the flow of the second gas supplied by the plurality of lifting holes so that the substrate is maintained at a first position above the supporting surface; as well as After controlling the first flow regulating element to supply the first gas having the first flow rate, controlling the second flow regulating element to stop supplying the second gas.

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