Laminated structure of magnetoelectric antenna and preparation method thereof

Abstract

The invention belongs to the technical field of communication equipment, and relates to a laminated structure of a magnetoelectric antenna and a preparation method thereof. Comprising a Si substrate; a Mo electrode layer, an AlN piezoelectric layer, a FeGa magnetostriction layer and an Al2O3 load layer are sequentially arranged on the Si substrate; through holes are formed in the centers of the Al2O3 load layer, the FeGa magnetostrictive layer, the AlN piezoelectric layer, the Mo electrode layer and the Si substrate; the through hole radius of the Mo electrode layer and the Si substrate is greater than the through hole radius of the Al2O3 load layer, the FeGa magnetostriction layer and the AlN piezoelectric layer; the antenna has the advantages of low electric leakage, high bandwidth and strong coupling capability of closing the machine.

Description

Technical Field

[0001] The invention belongs to the technical field of communication equipment and relates to a laminated structure of a magnetoelectric antenna and a preparation method thereof. Background Art

[0002] In recent years, the miniaturization of antennas has received attention in medical biology and other fields. However, since traditional metal antennas rely on electromagnetic wave propagation, the wavelength of electromagnetic waves is very wide at low frequencies, and the size of the designed antenna needs to be at least larger than one-tenth of its wavelength, so the size of the designed antenna will be very large. Since magnetoelectric antennas rely on sound wave transmission, the wavelength of electromagnetic waves at low frequencies is several orders of magnitude shorter than that of electromagnetic waves, and the size of their antennas is also reduced accordingly, which has great advantages in the miniaturization of antennas. This magnetoelectric antenna is composed of piezoelectric / ferromagnetic film isomers. Through voltage excitation, the piezoelectric film generates sound waves, and through the strain transmission of the piezoelectric / ferromagnetic interface, it induces the time-varying magnetic current of the ferromagnetic film and realizes the radiation of electromagnetic waves. Conversely, the magnetoelectric antenna senses the magnetic field of the electromagnetic wave, resulting in the voltage output of the piezoelectric film. This antenna works based on the mechanical resonance frequency of the sound wave rather than the resonance of the electromagnetic wave. At the same frequency, the lower the wave speed, the smaller the size. Since the wave speed of sound waves is 4-5 orders of magnitude smaller than that of electromagnetic waves, magnetoelectric antennas with new mechanisms can effectively realize antenna miniaturization. Under the condition of the same resonant frequency and without performance degradation, the size of the magnetoelectric antenna can be reduced by 10-100 times compared with the traditional metal antenna.

[0003] Any antenna has its operating frequency. When the frequency is not within its operating frequency range, the performance of the antenna will be significantly reduced. In order for the antenna to work better, the operating frequency range must be widened. This operating frequency range is called bandwidth. The bandwidth of the antenna is one of the main indicators of antenna performance. The larger the bandwidth of the antenna, the larger the frequency range it can work in, and the better the stability of the antenna. When multiple magnetoelectric antennas are connected in series or in parallel, a larger bandwidth can be obtained, which can achieve better performance.

[0004] At present, magnetoelectric antennas usually rely on specific structural designs, such as the interaction between resonant modes and electromagnetic fields. These structural designs have a strong dependence on the selectivity and matching of frequencies, which makes the antenna work ideally in a specific frequency band, but once the frequency deviates from the resonance point, the performance of the antenna drops rapidly. Therefore, the bandwidth of magnetoelectric antennas is usually narrow and cannot work effectively in a wider frequency range. Secondly, in the design of magnetoelectric antennas, the size of the antenna needs to match the wavelength of the electromagnetic wave. The smaller the antenna size, the narrower its bandwidth is usually, while increasing the antenna size will increase the bandwidth, but it will increase the complexity of the antenna size and structure, and may even affect other properties of the antenna, such as directivity and gain. Summary of the invention

[0005] The purpose of the present invention is to solve the problems in the prior art and to provide a laminated structure of a magnetoelectric antenna and a preparation method thereof, which can improve the bandwidth performance of the magnetoelectric antenna.

[0006] In order to achieve the above object, the present invention adopts the following technical solutions: In a first aspect, the present invention provides a laminated structure of a magnetoelectric antenna, comprising a Si substrate; a Mo electrode layer, an AlN piezoelectric layer, a FeGa magnetostrictive layer and an Al2O3 load layer are sequentially arranged on the Si substrate; through holes are arranged at the center of the Al2O3 load layer, the FeGa magnetostrictive layer, the AlN piezoelectric layer, the Mo electrode layer and the Si substrate; the through hole radius of the Mo electrode layer and the Si substrate is greater than the through hole radius of the Al2O3 load layer, the FeGa magnetostrictive layer and the AlN piezoelectric layer.

[0007] Preferably, the Al2O3 load layer, the FeGa magnetostrictive layer and the AlN piezoelectric layer are all annular structures.

[0008] Preferably, the Al2O3 supporting layer is an annular structure with an inner diameter of 362.5 um and an outer diameter of 550 um.

[0009] Preferably, the FeGa magnetostrictive layer is an annular structure with an inner diameter of 362.5 um and an outer diameter of 700 um.

[0010] Preferably, the AlN piezoelectric layer is a ring structure with an inner diameter of 362.5 um and an outer diameter of 700 um.

[0011] Preferably, the thickness of the Al2O3 supporting layer is 0.83 um.

[0012] Preferably, the thickness of the FeGa magnetostrictive layer is 8.3 um; the thickness of the AlN piezoelectric layer is 8.3 um.

[0013] Preferably, the thickness of the Mo electrode layer is 2.3 um.

[0014] Preferably, the thickness of the Si substrate is 15 um.

[0015] In a second aspect, the present invention provides a method for preparing a laminated structure of a magnetoelectric antenna, comprising: Cleaning the Si substrate and performing soft etching on the Si substrate; Depositing a Mo electrode layer on a Si substrate; An AlN piezoelectric layer, a FeGa magnetic telescopic layer and an Al2O3 load layer are sequentially deposited on the Mo electrode layer to obtain the laminated structure of the magnetoelectric antenna.

[0016] Compared with the prior art, the present invention has the following beneficial effects: The present invention provides electrodes for piezoelectric materials through Mo electrode layers so as to input and output electrical signals, which helps to ensure effective signal transmission and avoid performance degradation due to unstable electrode materials; magnetoelectric conversion is achieved through the AlN piezoelectric layer; the FeGa magnetostrictive layer enables the antenna to convert magnetic signals into mechanical signals, thereby cooperating with the piezoelectric effect to achieve magnetoelectric conversion; the load effect of the Al2O3 load layer enhances the stability of the structure, and the service life of the antenna is extended as a protective layer; the antenna has a larger bandwidth through the design of the through hole; the present invention has the advantages of low leakage, high bandwidth and strong electromechanical coupling capability. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0018] Figure 1 It is a structural schematic diagram of the magnetoelectric antenna structure of the present invention; Figure 2 A schematic diagram of the composite type of magnetoelectric materials in the laminated structure of the magnetoelectric antenna of the present invention; Figure 3 A bandwidth comparison diagram of the magnetoelectric antenna and the circular antenna of the present invention; Figure 4 This is a relationship diagram between K and bandwidth when the magnetoelectric antenna of the present invention has different outer diameters; Figure 5 A comparison diagram of the width of the magnetoelectric antenna substrate and electrode layer with and without through holes; Figure 6 This is a graph showing the relationship between the bandwidth of the magnetoelectric antenna of the present invention and the aperture of the substrate and the electrode layer; Figure 7 This is a graph showing the relationship between the bandwidth of the magnetoelectric antenna of the present invention and the outer diameter of the load layer.

[0019] Among them: 1. Al2O3 load layer; 2. FeGa magnetostrictive layer; 3. AlN piezoelectric layer; 4. Mo electrode layer; 5. Si substrate. DETAILED DESCRIPTION

[0020] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0021] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0022] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0023] In the description of the embodiments of the present invention, it should be noted that if the terms "upper", "lower", "horizontal", "inner", etc. indicate an orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the product of the invention is usually placed when in use, it is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "first", "second", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0024] In addition, if the term "horizontal" appears, it does not mean that the component must be absolutely horizontal, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", which does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0025] In the description of the embodiments of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal connection of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0026] The present invention provides a laminated structure of a magnetoelectric antenna, such as Figure 1As shown, it includes a Si substrate 5; the Si substrate 5 is sequentially provided with a Mo electrode layer 4, an AlN piezoelectric layer 3, a FeGa magnetostrictive layer 2 and an Al2O3 load layer 1; the Si substrate 5 of the present invention serves as the supporting basis of the entire laminated structure, providing the necessary mechanical strength, structural stability and thermal management. The Si substrate 5 can not only effectively conduct heat and prevent heat accumulation, but also provide a reliable supporting platform to ensure the deposition and connection of each layer of materials. The Mo electrode layer 4 provides electrodes for the piezoelectric material to input and output electrical signals, which helps to ensure the effective transmission of signals and avoid performance degradation due to unstable electrode materials. The AlN piezoelectric layer 3 can realize magnetoelectric conversion and acts as a sensor and actuator, converting external mechanical stress (such as sound waves, pressure, etc.) into electrical signals, or converting electrical signals into mechanical vibrations. The FeGa magnetostrictive layer 2 utilizes the magnetostrictive effect to deform under the action of an external magnetic field, thereby affecting the piezoelectric material on the upper layer. The magnetostrictive effect enables the antenna to convert magnetic signals into mechanical signals, thereby working together with the piezoelectric effect to realize magnetoelectric conversion. The loading effect of the Al2O3 loading layer 1 enhances the stability of the structure and, as a protective layer, prolongs the service life of the antenna.

[0027] In addition, the magnetoelectric antenna structure of the present invention is different from the previous antenna structure. Through holes are provided at the centers of the Al2O3 load layer 1, the FeGa magnetostrictive layer 2, the AlN piezoelectric layer 3, the Mo electrode layer 4 and the Si substrate 5, and the through hole radius of the Mo electrode layer 4 and the Si substrate 5 is larger than the through hole radius of the Al2O3 load layer 1, the FeGa magnetostrictive layer 2 and the AlN piezoelectric layer 3, so that the antenna has a larger bandwidth; at the same time, the present invention has the advantages of low leakage, high bandwidth and strong electromechanical coupling capability.

[0028] like Figure 2 As shown, the present invention selects a 2-2 stacked type as the composite structure of the magnetoelectric antenna. The magnetoelectric antenna is usually composed of piezoelectric material and magnetostrictive material, and its radiation time-varying field is generated by magnetization oscillation. According to the combination of ferromagnetic phase and ferroelectric phase, magnetoelectric composite materials are mainly divided into Figure 2 (a): 0-0 type, Figure 2 (b): Type 0-3, Figure 2 (c): Type 1-3, Figure 2 (d): Type 2-2 and Figure 2 (e): Five core-shell composite structures. Figure 2(d): 2-2 stacked magnetoelectric composite materials have the advantages of low leakage, easy synthesis and strong magnetoelectric coupling ability compared with other structural types. 2-2 stacked magnetoelectric composite structures can be prepared into micro-electromechanical systems (MEMS) magnetoelectric composite films with low interface loss and excellent performance in all aspects, which are compatible with complementary metal-oxide-semiconductor (CMOS) manufacturing processes.

[0029] The present invention selects a back-cavity film bulk acoustic resonator (FBAR) as the resonant structure of the antenna. The working principle of FBAR is to generate mechanical resonance under the action of an input electrical signal, inducing an alternating strain wave, and correspondingly, the strain wave can also be converted into an electrical signal output. The FBAR structure can be roughly divided into three types: solidly mounted resonator (SMR), silicon back-etched, and air-gap. Among them, the silicon back-etched and air-gap types use the principle that the acoustic impedance of air is much smaller than the acoustic impedance of piezoelectric materials, and almost all resonant sound waves are confined to the laminated structure. The silicon back-etched process is relatively simple, and the structural design is also relatively simplified.

[0030] The present invention sets the total thickness of the AlN piezoelectric layer 3 and the FeGa magnetostrictive layer 2 to be H. Considering the situation where waves overlap each other, after the previous wave enters the material and goes through a round trip (2H), the next wave must connect with the previous wave to form a superposition, and the formula for the resonant frequency is obtained:

[0031] in, represents the wave speed, Indicates the preset resonant frequency.

[0032] The thickness can be determined by the above formula. Assuming that the preset resonant frequency is 192 MHz and the wave speed is 6374 m / s, the total thickness of the AlN piezoelectric layer 3 and the FeGa magnetostrictive layer 2 is H=16.6 um. When the AlN piezoelectric layer 3 and the magnetostrictive layer are of equal thickness, the antenna performance has a good effect. It can be concluded that the thickness of the AlN piezoelectric layer 3 and the magnetostrictive layer are both 8.3 um.

[0033] The present invention first determines that the thickness of the AlN piezoelectric layer 3 and the FeGa magnetostrictive layer 2 of the magnetoelectric antenna are both 8.3 um; then determines that the thickness of the Si substrate 5 is 15 um, the thickness of the Mo electrode layer 4 is 2.3 um, and the thickness of the Al2O3 load layer 1 is 0.83 um. The thicknesses of the Al2O3 load layer 1, the FeGa magnetostrictive layer 2, the AlN piezoelectric layer 3, the Mo electrode layer 4 and the Si substrate 5 can be adaptively selected according to actual conditions.

[0034] Secondly, the Si substrate 5 and the Mo electrode layer 4 are both square structures, and the Al2O3 load layer 1, the AlN piezoelectric layer 3 and the FeGa magnetostrictive layer 2 are all ring structures.

[0035] like Figure 3 As shown, since the ring is different from the circle and has a through hole in the middle, the current in the antenna can flow in a circular shape, and the electric field and magnetic field generated by it can also pass through the through hole in the middle, which increases the antenna's mechanical and magnetic coupling effect to a certain extent and improves the antenna performance.

[0036] After the antenna shape is determined, the inner and outer diameters of the ring need to be further determined because different inner and outer diameters will lead to different impedance matching. Define the ratio of the inner and outer diameters of the ring as K, the inner diameter as r, and the outer diameter as R, and the formula is obtained:

[0037] There is an optimal K value that makes the antenna have the best performance. The present invention adopts S11, -10dB bandwidth as the index of antenna performance.

[0038] When the antenna outer diameter R is 650 um, change the inner diameter of the antenna to find the optimal bandwidth. Take the r range as 162.5 ~485 um, select a certain step size, and perform parameter scanning. Figure 4 As shown in (a), different K values ​​result in different bandwidths, and the bandwidth does not simply change linearly with the increase in K value. It can be seen that changing the inner diameter does not change the resonant frequency. Therefore, the inner diameter can be changed to increase the bandwidth while ensuring that the resonant frequency remains unchanged. Figure 4 (a) It can be seen that when K is 0.485, that is, r is 315 um, the optimal bandwidth is 0.234 MHz.

[0039] like Figure 4 As shown in (b), when the outer diameter R of the antenna is 700 um, there should also be an optimal K value to make the bandwidth of the antenna optimal. By changing the inner diameter of the antenna and increasing the K value step by step, the optimal bandwidth is found. When K is 0.518, that is, r is 362.5 um, the optimal bandwidth is 0.294 MHz.

[0040] like Figure 4 As shown in (c), when the antenna outer diameter R is 800 um, when the K value is 0.528, that is, r is 422.5 um, the optimal bandwidth is 0.251 MHz. In addition, the antenna outer diameter R can also be 550 um, 600 um, 750 um, etc., and there will be corresponding K values ​​that make its bandwidth optimal.

[0041] In the case where the AlN piezoelectric layer 3 and the FeGa magnetostrictive layer 2 are annular structures, if a back cavity FBAR structure is to be adopted, a through hole needs to be drilled inside the originally solid rectangular parallelepiped, such as Figure 5 As shown in the figure, it can be seen that the antenna bandwidth is not as good as when the through holes are drilled in the Si substrate 5 and the Mo electrode layer 4. This shows that the Si substrate 5 and the Mo electrode layer 4 with through holes are helpful to improve the antenna performance. There is also an optimal through hole radius in the aperture selection. Similarly, the through hole is parametrically scanned, and a certain step length is selected in the interval of 420~510 um to find the optimal bandwidth. Figure 6 It can be seen that when the through-hole radius is 440 um, the bandwidth is 1.05 MHz and the antenna performance is optimal.

[0042] In the design of the load layer, taking Al2O3 load layer 1 as an example, the resonant frequency of the magnetoelectric antenna and the equivalent sound velocity v of each layer of the film s Related to the total film thickness d, that is, ƒ0=v s / 2d, which has the advantages of high sound velocity and low acoustic attenuation. Inserting a nanometer-thick Al2O3 film on the top layer of the magnetoelectric antenna can excite another thickness mode of bulk acoustic waves in the adjacent frequency band. Since the Al2O3 film is thin, assuming that its effect on the equivalent sound velocity is not considered, in the resonance area of ​​the magnetoelectric antenna, the Al2O3 film with a thickness of d' will introduce a resonant frequency of ƒ1=v s / 2(d+d'), the frequency difference between the two bulk acoustic waves is Δƒ≈v s (d' / 4d 2 ). If the bandwidth of the magnetoelectric antenna without a load layer is BW, then the bandwidth of the magnetoelectric antenna with a load layer can be enhanced to (2BW-Δƒ), where 0<Δƒ<2BW. Secondly, in terms of its shape selection, a ring structure is selected, and the optimal outer diameter is found when the thickness is constant and the inner diameter is the same as that of the piezoelectric layer and the magnetostrictive layer. The outer diameter of the load layer is parametrically scanned, and a certain step size is selected in the range of 440~600 um to find the optimal bandwidth. By Figure 7 It is known that when the outer diameter of the load layer is selected to be 550 um, the bandwidth is 1.64 MHz and the performance of the antenna is optimal.

[0043] In summary, the laminated structure of the magnetoelectric antenna of the present invention includes, from bottom to top: Si substrate 5: a square structure of 1500 um×1500 um, with a thickness of 15 um, and a circular through hole with a radius of 386 um dug with the center of the square as the origin; Mo electrode layer 4: a square structure of 1500 um × 1500 um, with a thickness of 2.3 um, and a circular through hole with a radius of 386 um dug with the center of the square as the origin; AlN piezoelectric layer 3: a ring structure with an inner diameter of 362.5 um, an outer diameter of 700 um, and a thickness of 8.3 um; FeGa magnetostrictive layer 2: a ring structure with an inner diameter of 362.5 um, an outer diameter of 700 um, and a thickness of 8.3 um; Al2O3 loading layer 1: a ring structure with an inner diameter of 362.5 um, an outer diameter of 550 um, and a thickness of 0.83 um.

[0044] The second object of the present invention is to provide a method for preparing a laminated structure of a magnetoelectric antenna, which is prepared by MEMS technology, comprising: An 8-inch high-resistivity Si substrate 5 is prepared and cleaned. After cleaning, it is soft-etched using an SPTS fxp sputtering station, wherein the etching gas is H2, the power is 100 W, and the time is 30 s; then a Mo electrode layer 4 is deposited on the Si substrate 5, and an AlN piezoelectric layer 3 and a FeGa magnetic telescopic layer 2 are sequentially deposited on the Mo electrode layer 4 through the sputtering station, and an Al2O3 load layer 1 is grown on the FeGa magnetic telescopic layer 2 by atomic layer deposition, so as to obtain a laminated structure of a magnetoelectric antenna.

[0045] The MEMS process can precisely control the deposition, etching and thickness of materials, and can produce magnetoelectric antennas with high integration and small size, which helps to improve the performance and stability of the laminated structure. By growing the Al2O3 load layer 1 on the FeGa magnetic telescopic layer 2 and providing the AlN piezoelectric layer 3, the antenna structure of the present invention can effectively couple the magnetic telescopic effect with the piezoelectric effect, thereby achieving the enhancement of the magnetoelectric effect, so that the antenna can simultaneously utilize the interaction between the magnetic field and the electric field during the transmission and reception of electromagnetic waves, and has higher conversion efficiency and sensitivity, and is particularly suitable for low-frequency band and miniaturized magnetoelectric antennas.

[0046] The preparation method of the present invention can prepare a magnetoelectric antenna with high efficiency, high integration and good magnetoelectric coupling effect by precisely controlling the deposition, etching and growth process of each layer of material, meeting the requirements of modern communication and sensor technology for high-performance antennas. In addition, the method also has good reliability and manufacturability, reducing production costs while improving the overall performance of the antenna.

[0047] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A laminated structure of a magnetoelectric antenna, characterized in that: The invention comprises a Si substrate (5); a Mo electrode layer (4), an AlN piezoelectric layer (3), a FeGa magnetostrictive layer (2) and an Al2O3 load layer (1) are sequentially arranged on the Si substrate (5); through holes are arranged at the centers of the Al2O3 load layer (1), the FeGa magnetostrictive layer (2), the AlN piezoelectric layer (3), the Mo electrode layer (4) and the Si substrate (5); and the through hole radii of the Mo electrode layer (4) and the Si substrate (5) are larger than the through hole radii of the Al2O3 load layer (1), the FeGa magnetostrictive layer (2) and the AlN piezoelectric layer (3).

2. The laminated structure of a magnetoelectric antenna according to claim 1, characterized in that: The Al2O3 load layer (1), the FeGa magnetostrictive layer (2) and the AlN piezoelectric layer (3) are all annular structures.

3. The laminated structure of a magnetoelectric antenna according to claim 1, characterized in that: The Al2O3 supporting layer (1) is a ring structure with an inner diameter of 362.5 um and an outer diameter of 550 um.

4. The laminated structure of a magnetoelectric antenna according to claim 1, characterized in that: The FeGa magnetostrictive layer (2) is a ring structure with an inner diameter of 362.5 um and an outer diameter of 700 um.

5. The laminated structure of a magnetoelectric antenna according to claim 1, characterized in that: The AlN piezoelectric layer (3) is a ring structure with an inner diameter of 362.5 um and an outer diameter of 700 um.

6. The laminated structure of a magnetoelectric antenna according to claim 1, characterized in that: The thickness of the Al2O3 supporting layer (1) is 0.83 um.

7. The laminated structure of a magnetoelectric antenna according to claim 1, characterized in that: The thickness of the FeGa magnetostrictive layer (2) is 8.3 um; the thickness of the AlN piezoelectric layer (3) is 8.3 um.

8. The laminated structure of a magnetoelectric antenna according to claim 1, characterized in that: The thickness of the Mo electrode layer (4) is 2.3 um.

9. The laminated structure of a magnetoelectric antenna according to claim 1, characterized in that: The thickness of the Si substrate (5) is 15 um.

10. The method for preparing a laminated structure of a magnetoelectric antenna according to any one of claims 1 to 9, characterized in that: include: Cleaning the Si substrate (5) and performing soft etching on the Si substrate (5); Depositing a Mo electrode layer (4) on a Si substrate (5); An AlN piezoelectric layer (3), a FeGa magnetic expansion layer (2) and an Al2O3 load layer (1) are sequentially deposited on a Mo electrode layer (4) to obtain a laminated structure of the magnetoelectric antenna.

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