Microwave photon SIP assembly based on OTSV

Abstract

The invention provides a microwave photon SIP assembly based on OTSV. The microwave photon SIP assembly comprises a cover plate, a first enclosure frame, an electric interconnection substrate, a second enclosure frame and a photoelectric substrate which are sequentially arranged in a stacked mode. Wherein the cover plate, the first enclosure frame and the electric interconnection substrate are enclosed to form a first closed cavity, and the electric interconnection substrate, the second enclosure frame and the photoelectric substrate are enclosed to form a second closed cavity; the first closed cavity is used for assembling a low-frequency chip, and the second closed cavity is used for assembling a high-frequency chip; the photoelectric substrate and the electric interconnection substrate are in signal connection through a signal transmission line; the second enclosure frame is provided with at least one electric isolation wall, the two sides of each electric isolation wall are isolated cavities which are independent from each other, a photoelectric conversion channel is arranged in each isolated cavity, and the electric isolation walls are used for shielding high-frequency radio-frequency signals between the photoelectric conversion channels. The device has the technical advantages of high density, high-speed interconnection, high radio frequency channel isolation, multi-specialty fusion and multi-device integration, and microwave photon microsystematization is realized.

Description

Technical Field

[0001] The invention relates to the field of microwave photon technology, and in particular to an OTSV-based microwave photon SIP component. Background Art

[0002] As an emerging technology that integrates microwaves and optics, microwave photonics technology utilizes the advantages of large bandwidth, high speed and light weight of light wave signals, loads microwave signals on optical signals, and realizes the transmission and processing of microwave signals. At present, in the field of microwave photonics technology, the main architecture includes electrical signal processing modules, optical signal processing modules, and electro-optical / photoelectric conversion modules. In the traditional architecture, the electro-optical / photoelectric conversion module is mainly composed of separate modules. With the increase in the complexity of system functions, the demand for high integration of the system is becoming more and more urgent. The form of integrated packaging of optical signal processing units, electrical signal processing units, and electro-optical / photoelectric conversion modules has also taken shape. However, the assembly process of optical fiber tail tubes is limited by temperature and the low compatibility of electrical chips and optical chip materials. It can only realize planar chip arrangement, and it is difficult to directly realize chip-level direct stacking packaging. At the same time, when passively processing multiple optical signals, the RF isolation between different channels is low, which easily leads to crosstalk of RF signals in different channels.

[0003] In summary, in order to further improve the integration, miniaturization, and high RF isolation, the present invention proposes a method for realizing a microwave photonic SIP component based on OTSV to meet the needs of high-density, high-performance microwave photonic systems. Summary of the invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art.

[0005] To this end, the present invention provides a microwave photonic SIP component based on OTSV.

[0006] The present invention provides a microwave photonic SIP component based on OTSV, comprising a cover plate, a first enclosure frame, an electrical interconnection substrate, a second enclosure frame and an optoelectronic substrate which are sequentially stacked;

[0007] The cover plate, the first surrounding frame and the electrical interconnection substrate together form a first closed cavity, the electrical interconnection substrate, the second surrounding frame and the optoelectronic substrate together form a second closed cavity, and both the first closed cavity and the second closed cavity are airtight closed cavities;

[0008] The first closed cavity is used to assemble low-frequency chips, and the second closed cavity is used to assemble high-frequency chips; wherein the low-frequency chips include at least a logic chip and a power chip, and the high-frequency chips include at least an optical chip and a microwave chip;

[0009] The optoelectronic substrate and the electrical interconnection substrate are signal-connected via a signal transmission line;

[0010] The second enclosure is provided with at least one electrical isolation wall, and the two sides of each electrical isolation wall are mutually independent isolation cavities, each isolation cavity is provided with a photoelectric conversion channel, and the electrical isolation wall is used to shield high-frequency radio frequency signals between the photoelectric conversion channels.

[0011] The microwave photonic SIP component based on OTSV according to the above technical solution of the present invention may also have the following additional technical features:

[0012] In the above technical solution, the signal transmission line includes:

[0013] A first electrical signal transmission line, disposed on the electrical interconnect substrate;

[0014] A second electrical signal transmission line is disposed in the second enclosure;

[0015] A third electrical signal transmission line is disposed on the optoelectronic substrate;

[0016] Among them, the low-frequency electrical signal generated by the low-frequency chip in the first closed cavity is transmitted to the high-frequency chip in the second closed cavity through the first electrical signal transmission line, the second electrical signal transmission line and the third electrical signal transmission line, thereby realizing the feeding and control of the high-frequency chip.

[0017] In the above technical solution, the second electrical signal transmission line is embedded in the frame body of the second surrounding frame and / or the electrical isolation wall.

[0018] In the above technical solution, the first surrounding frame is arranged in the gap between the cover plate and the electrical interconnection substrate, and is fixedly connected to the cover plate and the electrical interconnection substrate respectively;

[0019] Wherein, the first surrounding frame is made of metal.

[0020] In the above technical solution, there are multiple electrical isolation walls, and the second closed cavity is divided into multiple isolation cavities by the electrical isolation walls.

[0021] In the above technical solution, the second surrounding frame is arranged in the gap between the electrical interconnection substrate and the optoelectronic substrate, and is fixedly connected to the electrical interconnection substrate and the optoelectronic substrate respectively;

[0022] wherein the electrical isolation walls are connected to the electrical interconnect substrate and the optoelectronic substrate respectively;

[0023] Furthermore, the second surrounding frame is at least partially made of Si material.

[0024] In the above technical solution, the optoelectronic substrate comprises:

[0025] Optical interface, receiving optical signals;

[0026] An optical interconnect waveguide connected to the optical interface, and transmitting the optical signal to the optical chip located in the second closed cavity after optical processing;

[0027] BGA solder balls, the optical interconnect waveguide and the BGA solder balls are located on different surfaces of the optoelectronic substrate;

[0028] A fourth electrical signal transmission line, through which the high-frequency chip is connected to the BGA solder ball.

[0029] In the above technical solution, the optical interconnect waveguide includes:

[0030] An optical input end connected to the optical interface, wherein the optical input end adopts a V-groove structure, and an external optical fiber entering the optical interface is embedded in the V-groove structure;

[0031] an optical function unit, comprising a wavelength division multiplexer and an optical splitter, for optically processing the optical signal;

[0032] The optical coupling end is connected to the optical chip.

[0033] In the above technical solution, the optical interconnect waveguide has a plurality of optical coupling ends, each optical coupling end corresponds to an output port of the optical functional unit, and each optical coupling end is located in an independent isolation cavity.

[0034] In the above technical solution, the optoelectronic substrate is made of SOI material or SiO 2 The optical chip is made of GeSi material;

[0035] The optical chip is integrated with the optoelectronic substrate.

[0036] In summary, due to the adoption of the above technical features, the beneficial effects of the present invention are:

[0037] The microwave photonic SIP component based on OTSV proposed in the present invention can realize the interconnection of high-density electrical signals, optical signals, and radio frequency signals, and utilizes the functional regionalized stacking structure to complete the silicon-based three-dimensional stacked packaging with high integration and high radio frequency isolation of microwave photonic technology. The present invention has the technical advantages of high-density, high-speed interconnection, high radio frequency channel isolation, multi-professional integration, and multi-device integration, and realizes the microsystemization of microwave photonics.

[0038] Additional aspects and advantages of the present invention will become apparent from the following description or may be learned by practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0040] Figure 1 is a cross-sectional view of a microwave photonic SIP assembly based on OTSV according to an embodiment of the present invention;

[0041] Figure 2 It is a schematic structural diagram of a second enclosure frame in a microwave photonic SIP assembly based on OTSV according to an embodiment of the present invention;

[0042] Figure 3 FIG. 4 is a cross-sectional view of an optoelectronic substrate in an OTSV-based microwave photonic SIP assembly according to an embodiment of the present invention.

[0043] in, Figures 1 to 3 The corresponding relationship between the reference numerals and the component names is as follows:

[0044] 1. Cover plate; 2. First enclosure frame; 3. Electrical interconnection substrate; 4. Second enclosure frame; 5. Photoelectric substrate; 6. First closed cavity; 7. Second closed cavity;

[0045] 31. A first electrical signal transmission line;

[0046] 41. Electrical isolation wall; 42. Second electrical signal transmission line; 43. Isolation cavity;

[0047] 51. third electrical signal transmission line; 52. optical interface; 53. optical interconnect waveguide; 54. BGA solder ball; 55. fourth electrical signal transmission line;

[0048] 61. Logic chip; 62. Power chip;

[0049] 71. Optical chip; 72. Microwave chip. DETAILED DESCRIPTION

[0050] In order to more clearly understand the above-mentioned purpose, features and advantages of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.

[0051] In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Therefore, the protection scope of the present invention is not limited to the specific embodiments disclosed below.

[0052] Refer to the following Figures 1 to 3 The following describes a microwave photonic SIP assembly based on OTSV according to some embodiments of the present invention.

[0053] Some embodiments of the present application provide a microwave photonic SIP component based on OTSV.

[0054] like Figure 1 As shown, the first embodiment of the present invention proposes a microwave photonic SIP component based on OTSV, comprising a cover plate 1, a first enclosure frame 2, an electrical interconnection substrate 3, a second enclosure frame 4 and an optoelectronic substrate 5 which are stacked in sequence; wherein the cover plate 1, the first enclosure frame 2 and the electrical interconnection substrate 3 enclose a first closed cavity 6, and the electrical interconnection substrate 3, the second enclosure frame 4 and the optoelectronic substrate 5 enclose a second closed cavity 7, and the first closed cavity 6 and the second closed cavity 7 are both airtight closed cavities.

[0055] exist Figure 1 In the illustrated embodiment, the cover plate 1 serves as the upper wall surface enclosing the first closed cavity 6, the electrical interconnection substrate 3 serves as the lower wall surface enclosing the first closed cavity 6, and the first enclosure 2 serves as the side wall surface enclosing the first closed cavity 6. Specifically, the first enclosure 2 is disposed in the gap between the cover plate 1 and the electrical interconnection substrate 3, and is fixedly connected to the cover plate 1 and the electrical interconnection substrate 3, respectively; in some embodiments, the first enclosure 2 is made of metal and is welded to the cover plate 1 and the electrical interconnection substrate 3, respectively.

[0056] Continue reading Figure 1 For the second closed cavity 7, the electrical interconnection substrate 3 serves as the upper wall surface of the second closed cavity 7, the optoelectronic substrate 5 serves as the lower wall surface of the second closed cavity 7, and the second enclosure 4 serves as the side wall surface of the second closed cavity 7. Specifically, the second enclosure 4 is disposed in the gap between the electrical interconnection substrate 3 and the optoelectronic substrate 5, and is fixedly connected to the electrical interconnection substrate 3 and the optoelectronic substrate 5 respectively; in some embodiments, the second enclosure 4 is at least partially made of Si material.

[0057] The first closed cavity 6 is used to assemble low-frequency chips, and the second closed cavity 7 is used to assemble high-frequency chips; wherein the low-frequency chips include at least a logic chip 61 and a power chip 62, and the high-frequency chips include at least an optical chip 71 and a microwave chip 72. It can be understood that the low-frequency chips such as the logic chip 61 and the power chip 62 are located in the first closed cavity 6, and are used to realize the functions of logic state control and chip feeding of the microwave photon SIP component; the high-frequency chips such as the optical chip 71 and the microwave chip 72 are located in the second closed cavity 7, and are used to realize the functions of photoelectric / electro-optical conversion, microwave processing, etc.

[0058] It should be noted that a high-frequency chip refers to a chip with an operating frequency greater than 100 MHz, and a low-frequency chip refers to a chip with an operating frequency less than 100 MHz; wherein the operating frequency of a low-frequency chip is usually between 30 MHz and 300 MHz, and the operating frequency of a high-frequency chip is usually between several hundred MHz and several thousand MHz. In the present disclosure, the high-frequency chip and the low-frequency chip are respectively placed in a first closed cavity 6 and a second closed cavity 7 which are stacked and isolated from each other, wherein the electrical interconnection substrate 3 is used as a dividing line, so as to improve the integration while ensuring the isolation.

[0059] The optoelectronic substrate 5 and the electrical interconnection substrate 3 are connected by signals through a signal transmission line; that is, the low-frequency chip and the high-frequency chip can be connected by signals through the signal transmission line.

[0060] In some embodiments, the signal transmission line includes a first electrical signal transmission line 31 , a second electrical signal transmission line 42 , and a third electrical signal transmission line 51 .

[0061] The first electrical signal transmission line 31 is arranged on the electrical interconnection substrate 3; the second electrical signal transmission line 42 is arranged in the second enclosure 4; the third electrical signal transmission line 51 is arranged on the optoelectronic substrate 5; wherein the low-frequency electrical signal generated by the low-frequency chip in the first closed cavity 6 is transmitted to the high-frequency chip in the second closed cavity 7 through the first electrical signal transmission line 31, the second electrical signal transmission line 42 and the third electrical signal transmission line 51, thereby realizing the feeding and control of the high-frequency chip.

[0062] In a specific embodiment, the second electrical signal transmission line 42 is embedded in the frame of the second surrounding frame 4 .

[0063] like Figure 1 As shown, the second enclosure 4 is provided with at least one electrical isolation wall 41, and the two sides of each electrical isolation wall 41 are mutually independent isolation cavities 43, and each isolation cavity 43 is provided with a photoelectric conversion channel, and the electrical isolation wall 41 is used to shield the high-frequency radio frequency signals between the photoelectric conversion channels. Among them, the electrical isolation wall 41 is connected to the electrical interconnection substrate 3 and the photoelectric substrate 5 respectively. It can be understood that a microwave photon SIP component can be provided with multiple sets of high-frequency chips to achieve different functions, that is, multiple optical chips 71 and multiple microwave chips 72 can be provided, and each optical chip 71 requires an independent photoelectric conversion channel. The present disclosure meets the above requirements by providing an electrical isolation wall 41.

[0064] In some embodiments, Figure 2 As shown, there are multiple electrical isolation walls 41 , and the second closed cavity 7 is divided into multiple isolation cavities 43 by the electrical isolation walls 41 .

[0065] It can be understood that, in the above embodiment, the second electrical signal transmission line 42 can also be embedded in the electrical isolation wall 41 .

[0066] In some embodiments, Figure 3 As shown, the optoelectronic substrate 5 includes: an optical interface 52 , an optical interconnect waveguide 53 , a BGA solder ball 54 and a fourth electrical signal transmission line 55 .

[0067] The optical interface 52 is used to receive optical signals; specifically, the optical interface 52 includes an input optical fiber and an optical fiber cover layer.

[0068] The optical interconnect waveguide 53 is connected to the optical interface 52 , and transmits the optical signal to the optical chip 71 located in the second closed cavity 7 after optical processing.

[0069] The optical interconnect waveguide 53 and the BGA solder ball 54 are located on different surfaces of the optoelectronic substrate 5; Figure 3 As shown, the optical interconnect waveguide 53 is located on the upper surface of the optoelectronic substrate 5 , and the BGA solder ball 54 is located on the lower surface of the optoelectronic substrate 5 .

[0070] The fourth electrical signal transmission line 55 is disposed inside the optoelectronic substrate 5 , and the high-frequency chip is connected to the BGA solder ball 54 via the fourth electrical signal transmission line 55 .

[0071] In some embodiments, the optical interconnect waveguide 53 includes an optical input end, an optical functional unit, and an optical coupling end.

[0072] The optical input end is connected to the optical interface 52. In a specific embodiment, the optical input end adopts a V-groove structure, and the external optical fiber entering the optical interface 52 is embedded in the V-groove structure;

[0073] An optical functional unit, including functional devices such as a wavelength division multiplexer and an optical splitter, for optically processing the optical signal;

[0074] The optical coupling end is connected to the optical chip 71 .

[0075] In a specific embodiment, the optical interconnect waveguide 53 has a plurality of optical coupling ends, each optical coupling end corresponds to an output port of the optical functional unit, and each optical coupling end is located in an independent isolation cavity 43. The optical coupling method used by each optical coupling end can be lens coupling, evanescent wave coupling, or waveguide direct connection.

[0076] In some embodiments, the optoelectronic substrate 5 is made of SOI material or SiO2 material; the optical chip 71 is made of GeSi material; the optical chip 71 is integrated with the optoelectronic substrate 5, that is, the optical chip 71 is directly arranged on the optoelectronic substrate 5. It should be noted that the above material selection is only a preferred method of the present disclosure, and those skilled in the art can also select other similar materials according to needs.

[0077] In some embodiments, the electrical signal transmission path of the microwave photonic SIP component proposed in the present disclosure is as follows: the first electrical signal transmission line 31 contained in the electrical interconnection substrate 3 is used to realize the electrical signal interconnection between the first closed cavity 6 and the second closed cavity, that is, to realize the connection between the low-frequency chip in the first closed cavity 6 and the second electrical signal transmission line 42 in the second enclosure 4; the second electrical signal transmission line 42 in the second enclosure 4 is connected to the third electrical signal transmission line 51 on the optoelectronic substrate 5, and the third electrical signal transmission line 51 is connected to the high-frequency chip in the second closed cavity 7, thereby realizing the interconnection of high-speed microwave signals and low-speed electrical signals between the optoelectronic substrate 5 and the electrical interconnection substrate 3.

[0078] In a specific embodiment, the signal flow of the present disclosure is as follows: the input optical signal is input into the optoelectronic substrate 5 through the optical interface 52, the optical interconnect waveguide 53 performs optical processing such as demultiplexing and optical branching on the input optical signal, and then couples the optical signal to the optical chip 71 located in the second closed cavity through the optical coupling end, and is converted into an electrical signal for output by the optical chip 71. After being processed by the microwave chip 72, the output electrical signal is transmitted to the BGA solder ball 54 through the fourth electrical signal transmission line 55 in the optoelectronic substrate 5, thereby realizing the external output of the radio frequency signal.

[0079] The logic chip 61 and the power chip 62 located in the first closed cavity transmit the low-frequency electrical signal to the optical chip 71 and the microwave chip 72 in the second closed cavity through the first electrical signal transmission line 31, the second electrical signal transmission line 42, and the third electrical signal transmission line 51, thereby realizing the feeding and control of the optical chip 71 and the microwave chip 72.

[0080] In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0081] Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A microwave photonic SIP component based on OTSV, characterized in that: It includes a cover plate, a first surrounding frame, an electrical interconnection substrate, a second surrounding frame and an optoelectronic substrate which are sequentially stacked; The cover plate, the first surrounding frame and the electrical interconnection substrate together form a first closed cavity, the electrical interconnection substrate, the second surrounding frame and the optoelectronic substrate together form a second closed cavity, and both the first closed cavity and the second closed cavity are airtight closed cavities; The first closed cavity is used to assemble low-frequency chips, and the second closed cavity is used to assemble high-frequency chips; wherein the low-frequency chips include at least a logic chip and a power chip, and the high-frequency chips include at least an optical chip and a microwave chip; The optoelectronic substrate and the electrical interconnection substrate are signal-connected via a signal transmission line; The second enclosure is provided with at least one electrical isolation wall, and the two sides of each electrical isolation wall are mutually independent isolation cavities, each isolation cavity is provided with a photoelectric conversion channel, and the electrical isolation wall is used to shield high-frequency radio frequency signals between the photoelectric conversion channels.

2. The OTSV-based microwave photonic SIP assembly according to claim 1, characterized in that: The signal transmission circuit comprises: A first electrical signal transmission line, disposed on the electrical interconnect substrate; A second electrical signal transmission line is disposed in the second enclosure; A third electrical signal transmission line is disposed on the optoelectronic substrate; Among them, the low-frequency electrical signal generated by the low-frequency chip in the first closed cavity is transmitted to the high-frequency chip in the second closed cavity through the first electrical signal transmission line, the second electrical signal transmission line and the third electrical signal transmission line, thereby realizing the feeding and control of the high-frequency chip.

3. The OTSV-based microwave photonic SIP assembly according to claim 2, characterized in that: The second electrical signal transmission line is embedded in the frame body of the second surrounding frame and / or the electrical isolation wall.

4. The OTSV-based microwave photonic SIP assembly according to claim 1, characterized in that: The first surrounding frame is disposed in the gap between the cover plate and the electrical interconnection substrate, and is fixedly connected to the cover plate and the electrical interconnection substrate respectively; Wherein, the first surrounding frame is made of metal.

5. The OTSV-based microwave photonic SIP assembly according to claim 1, characterized in that: There are multiple electrical isolation walls, and the second closed cavity is divided into multiple isolation cavities by the electrical isolation walls.

6. The OTSV-based microwave photonic SIP assembly according to claim 1, characterized in that: The second surrounding frame is arranged in the gap between the electrical interconnection substrate and the optoelectronic substrate, and is fixedly connected to the electrical interconnection substrate and the optoelectronic substrate respectively; wherein the electrical isolation walls are connected to the electrical interconnect substrate and the optoelectronic substrate respectively; Furthermore, the second surrounding frame is at least partially made of Si material.

7. The OTSV-based microwave photonic SIP assembly according to claim 1, characterized in that: The optoelectronic substrate comprises: Optical interface, receiving optical signals; An optical interconnect waveguide connected to the optical interface, and transmitting the optical signal to the optical chip located in the second closed cavity after optical processing; BGA solder balls, the optical interconnect waveguide and the BGA solder balls are located on different surfaces of the optoelectronic substrate; A fourth electrical signal transmission line, through which the high-frequency chip is connected to the BGA solder ball.

8. The OTSV-based microwave photonic SIP assembly according to claim 7, characterized in that: The optical interconnect waveguide comprises: An optical input end connected to the optical interface, wherein the optical input end adopts a V-groove structure, and an external optical fiber entering the optical interface is embedded in the V-groove structure; an optical function unit, comprising a wavelength division multiplexer and an optical splitter, for optically processing the optical signal; The optical coupling end is connected to the optical chip.

9. The OTSV-based microwave photonic SIP assembly according to claim 8, characterized in that: The optical interconnect waveguide has a plurality of optical coupling ends, each optical coupling end corresponds to an output port of the optical functional unit, and each optical coupling end is located in an independent isolation cavity.

10. The OTSV-based microwave photonic SIP assembly according to claim 8, characterized in that: The optoelectronic substrate is made of SOI material or SiO2 material; the optical chip is made of GeSi material; The optical chip is integrated with the optoelectronic substrate.

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