Photovoltaic module and photovoltaic system

Abstract

The invention provides a photovoltaic module and a photovoltaic system, and relates to the technical field of photovoltaics. The photovoltaic module comprises a conductive backboard and a back contact battery piece arranged on the conductive backboard. The back contact battery piece comprises a plurality of collector grid lines; the conductive back plate comprises a conductive layer and an insulating layer located between the conductive layer and the back contact battery piece; the conductive layer comprises a plurality of finger-shaped conductive structures extending in the second direction and insulation gaps located between the adjacent finger-shaped conductive structures; a through hole is formed in the insulating layer, and a partial region of the finger-shaped conductive structure at the through hole is electrically connected with the collector grid line at the corresponding position; the number of the finger-shaped conductive structures in an area corresponding to one back contact battery piece in the conductive layer is a first number; the ratio of the width of the insulation gap to the first number is 18 to 125. The photovoltaic module is high in current collection capability, low in resistance loss, low in manufacturing cost, high in yield, low in short circuit risk, small in waste wire tearing probability and high in waste removal efficiency.

Description

Technical Field

[0001] The present invention relates to the field of photovoltaic technology, and in particular to a photovoltaic component and a photovoltaic system. Background Art

[0002] Back-contact cells can make full use of sunlight due to their structure without grid lines on the light-facing side, making them more efficient. In addition, the structure without grid lines on the light-facing side makes the appearance of the module more beautiful, so they have broad application prospects. However, a single back-contact cell has poor mechanical strength, is easily affected by the environment, and has low output voltage, current and power. Therefore, it is usually necessary to package multiple back-contact cells into photovoltaic modules.

[0003] In existing photovoltaic modules, in order to avoid the risk of hidden cracks caused by the heat during welding, a conductive backplane can be used for conductive connection. The conductive layer in the conductive backplane needs to be provided with finger-shaped conductive structures and insulating gaps between adjacent finger-shaped conductive structures.

[0004] However, in existing photovoltaic modules including conductive backsheets, the size design of the insulating gap in the conductive layer is poor, resulting in poor performance of the current photovoltaic modules including conductive backsheets. Summary of the invention

[0005] The present invention provides a photovoltaic module and a photovoltaic system, aiming to solve the problem that the existing photovoltaic module including a conductive back plate has poor performance.

[0006] A first aspect of the present invention provides a photovoltaic module, comprising: a conductive back sheet, and a back contact cell sheet disposed on the conductive back sheet;

[0007] The back contact cell comprises: a plurality of collector grid lines extending along a first direction;

[0008] The conductive backplane comprises: a conductive layer, and an insulating layer located between the conductive layer and the back contact cell; the conductive layer comprises: a plurality of finger-shaped conductive structures extending along a second direction, and insulating gaps located between adjacent finger-shaped conductive structures; the first direction is different from the second direction; a through hole is provided in the insulating layer, and a partial area of ​​the finger-shaped conductive structure at the through hole is electrically connected to the collector grid line at a corresponding position;

[0009] In the region of the conductive layer corresponding to one of the back contact cells, the number of the finger-shaped conductive structures is a first number;

[0010] The ratio of the width of the insulating gap to the first number is 18 to 125; the width is in micrometers.

[0011] In the present application, a partial area of ​​the finger-shaped conductive structure at the through hole is electrically connected to the collector grid line at the corresponding position to realize current collection and conduction. The width of the insulating gap in the conductive layer will affect the size of the finger-shaped conductive structure, and then affect the resistance, and affect the current collection and conduction effect. Therefore, in the area corresponding to a back-contact battery cell in the conductive layer, the first number of finger-shaped conductive structures and the width of the insulating gap are closely related to the current conduction quality. Specifically, as the first number of finger-like conductive structures in the conductive layer corresponding to a back-contact cell increases, it is beneficial to increase the current collection capacity of the back-contact cell and reduce resistance loss, thereby increasing the power of the photovoltaic module. However, when the first number increases to a certain extent, the boundary effect of improving the current collection capacity and reducing resistance loss gain decreases; secondly, too many finger-like conductive structures will also increase the difficulty of aligning the collector grid and the conductive backplane, and increase the manufacturing precision requirements for the collector grid and the conductive layer, thereby increasing the manufacturing difficulty; in addition, too many finger-like conductive structures will reduce the effective area of ​​the back-contact cell surface for absorbing light, thereby reducing the photoelectric conversion efficiency; thirdly, too many finger-like conductive structures will increase the length of the insulating gap, and during the waste removal process of the insulating gap, the probability of waste wire tearing off will increase, which will lead to a decrease in waste removal efficiency on the one hand, and on the other hand, some residual waste wire will easily cause adjacent finger-like conductive structures 121 to overlap and short-circuit.In order to reduce the probability of the waste wire being torn off, if the width of the insulating gap is increased, too much waste will be removed. On the one hand, too much waste will affect the effective area of ​​the conductive layer. The reduction of the effective area of ​​the conductive layer will increase the overall resistivity, thereby reducing the current collection efficiency. Therefore, the selection of the appropriate first number requires finding a balance between the current collection capacity of the back contact cell, the resistance loss, the utilization rate of the illumination area, the waste removal efficiency and the cost, so as to achieve the best performance and cost-effectiveness balance. At the same time, the role of the insulating gap between adjacent finger-shaped conductive structures in the conductive layer is mainly to avoid the short circuit problem. Increasing the width of the insulating gap can reduce the risk of short circuit and reduce the probability of the waste wire being torn off. However, if the width of the insulating gap is too large, the waste removal corresponding to the insulating gap is more, that is, more conductive material is removed from the conductive layer, resulting in more material waste, higher cost, and a smaller effective area of ​​the conductive layer, with a larger resistance. In addition, if the width of the insulating gap is too small, the waste wire is easily torn off during the waste removal process, the waste removal efficiency is low, and there is also a risk of insulation reliability. Therefore, the selection of the appropriate width of the insulating gap is a balance between cost, resistance loss, short circuit risk and waste removal efficiency. Find a balance point to achieve the best balance between performance and cost-effectiveness; it should be noted that, in the case of optimizing the balance of multiple factors such as the current collection capacity of the back contact cell 2, resistance loss, alignment difficulty of the collector grid line and the conductive backplane 1, illumination area utilization, waste removal efficiency, short circuit risk, and cost, the first number here can be selected from 12 to 28, and the width d1 of the insulating gap 122 here can be selected from 500 μm to 1500 μm, 500 / 28=17.8, 1500 / 12=125, so in this application, the insulating gap The ratio of the width to the first number is 18 to 125. This ratio range is a suitable ratio range selected when the current transmission efficiency, resistance loss, illumination area utilization, short circuit risk, waste removal efficiency of the back contact cell are relatively balanced with the cost and process. Therefore, in this photovoltaic module, the back contact cell has a strong current collection capacity and low resistance loss, a high illumination area utilization, a high power generation efficiency of the back contact cell, a low manufacturing cost, a relatively simple preparation process, a high yield, and a low short circuit risk. At the same time, the probability of waste silk tearing is small, and the waste removal efficiency is high.

[0012] Optionally, in a region of the conductive layer corresponding to one of the back contact cells, the length of the insulating gap is a first length;

[0013] A ratio of the first length to the width of the insulating gap is 1200 to 9000.

[0014] Optionally, the ratio of the length of the finger-shaped conductive structure to the width of the insulating gap is 60 to 450; and the direction of the length of the finger-shaped conductive structure is parallel to the second direction.

[0015] Optionally, in the second direction, the finger-shaped conductive structure includes relative head and tail regions, and a middle region connecting the head and tail regions; the middle region contains the center of the finger-shaped conductive structure; and the width of the head region is less than or equal to the width of the tail region.

[0016] Optionally, for one of the finger-shaped conductive structures: the width of the insulating gap at the head region and the width of the insulating gap at the tail region are both greater than or equal to the width of the insulating gap at the middle region.

[0017] Optionally, the width of the finger-shaped conductive structure at a center position of the head region is the first width; the width of the finger-shaped conductive structure at a center position thereof is the second width;

[0018] For one of the finger-shaped conductive structures: the ratio of the width of the insulating gap at the center of the head region to the first width is a first ratio, and the ratio of the width of the insulating gap at the center of the finger-shaped conductive structure to the second width is a second ratio;

[0019] The first ratio is greater than or equal to the second ratio.

[0020] Optionally, the first ratio is 6 to 44;

[0021] The second ratio is 8 to 55.

[0022] Optionally, for one of the finger-shaped conductive structures: a ratio of a width of the insulating gap at a center position of the head region to a width of the insulating gap at a center position of the finger-shaped conductive structure is 1 to 3.

[0023] Optionally, in the same finger-shaped conductive structure: the width at the center of the tail region is the third width, and the width at the center of the head region is the first width; the ratio of the third width to the first width is 2.5 to 53.

[0024] Optionally, the head region includes: an endpoint away from the tail region;

[0025] The end point of the finger-shaped conductive structure and its projection on the conductive layer are located within the finger-shaped conductive structure, and the distance between the through hole adjacent to the end point and the through hole is 0.3 mm to 1 mm.

[0026] Optionally, a width of the insulating gap is 500 μm to 1500 μm, and the first number ranges from 12 to 28.

[0027] Optionally, a width of the insulating gap is 600 μm to 1200 μm, and the first number ranges from 16 to 24.

[0028] Optionally, the length of the back contact cell in the first direction is 160 mm to 220 mm;

[0029] The width of the back contact cell is less than or equal to the length.

[0030] Optionally, in a region of the conductive layer corresponding to one of the back contact cells, the length of the insulating gap is a first length;

[0031] The ratio of the length of the back contact cell in the first direction to the first length is 0.09 to 0.12;

[0032] The ratio of the width of the back contact cell to the width of the insulating gap is 65 to 485; and the direction of the width of the back contact cell is perpendicular to the first direction.

[0033] Optionally, the photovoltaic module further includes: an alloy layer located between the finger-shaped conductive structure and the collector grid line electrically connected to the finger-shaped conductive structure.

[0034] A second aspect of the present invention provides a photovoltaic module, comprising: a conductive back sheet, and a back contact cell sheet disposed on the conductive back sheet;

[0035] The back contact cell comprises: a plurality of collector grid lines extending along a first direction;

[0036] The conductive backplane comprises: a conductive layer, and an insulating layer located between the conductive layer and the back contact cell; the conductive layer comprises: a plurality of finger-shaped conductive structures extending along a second direction, and insulating gaps located between adjacent finger-shaped conductive structures; the first direction is different from the second direction; a through hole is provided in the insulating layer, and a partial area of ​​the finger-shaped conductive structure at the through hole is electrically connected to the collector grid line at a corresponding position;

[0037] In a region of the conductive layer corresponding to one of the back contact cells, the area of ​​all the insulating gaps is a first area;

[0038] The area of ​​the region in the conductive layer corresponding to one of the back contact cells is the second area;

[0039] The ratio of the first area to the second area is 1% to 40%.

[0040] Optionally, an area of ​​one of the finger-shaped conductive structures is a third area;

[0041] The area of ​​the insulating gap outside the finger-shaped conductive structure is a fourth area;

[0042] A ratio of the third area to the fourth area is 3.4 to 4.5.

[0043] Optionally, in a region of the conductive layer corresponding to one of the back contact cells, the total area of ​​all the finger-shaped conductive structures is a fifth area;

[0044] A ratio of the first area to the fifth area is 0.02 to 0.24.

[0045] Optionally, in the second direction, the finger-shaped conductive structure includes a head region and a tail region opposite to each other, and a middle region connecting the head region and the tail region; the area of ​​the head region is less than or equal to the area of ​​the tail region.

[0046] Optionally, the area of ​​the head region is the sixth area; the area of ​​the insulating gap outside the head region is the seventh area;

[0047] The ratio of the seventh area to the sixth area is a third ratio;

[0048] The area of ​​the middle region is the eighth area; the area of ​​the insulating gap outside the middle region is the ninth area;

[0049] The ratio of the ninth area to the eighth area is a fourth ratio;

[0050] The third ratio is greater than the fourth ratio.

[0051] Optionally, the third ratio is 0.05 to 0.5; the fourth ratio is 0.036 to 0.36.

[0052] Optionally, the first area is 360 mm 2 Up to 2700mm 2 .

[0053] A third aspect of the present invention provides a photovoltaic system, characterized by comprising: a plurality of any of the aforementioned photovoltaic components.

[0054] The above-mentioned photovoltaic modules and photovoltaic systems have the same or similar beneficial effects, which will not be described again here to avoid repetition. BRIEF DESCRIPTION OF THE DRAWINGS

[0055] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative labor.

[0056] Figure 1 A schematic front cross-sectional view of a photovoltaic module in an embodiment of the present invention is shown;

[0057] Figure 2 A schematic structural diagram of a conductive layer in an embodiment of the present invention is shown;

[0058] Figure 3 A schematic structural diagram of an insulating layer in an embodiment of the present invention is shown;

[0059] Figure 4 and Figure 5 A schematic diagram of the local structure of the conductive layer and the insulating layer in the embodiment of the present invention is shown.

[0060] Description of the accompanying drawings:

[0061] 1-conductive backplane, 11-insulating layer, 111-through hole, 112-bonding material, 12-conductive layer, 13-rear packaging film, 14-backplane, 2-back contact battery cell, 3-front packaging film, 4-glass, 121-finger-shaped conductive structure, 122-insulating gap, 1211-head region of the finger-shaped conductive structure, 1212-tail region of the finger-shaped conductive structure. DETAILED DESCRIPTION

[0062] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are embodiments of a region of the present invention, rather than embodiments of the entire region. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0063] The present invention provides a photovoltaic module, Figures 1 to 5 Explain this application. Figure 1 The photovoltaic module comprises: a conductive back sheet 1, and a back contact cell 2 arranged on the conductive back sheet 1. The photovoltaic module may also comprise: a front encapsulation film 3 and a glass 4 sequentially located on the side of the back contact cell 2 away from the conductive back sheet 1.

[0064] The back contact cell includes: a plurality of collector grid lines extending along the first direction L1, the collector grid lines are used to collect and conduct current; the collector grid lines here may include: N-type collector grid lines and P-type collector grid lines. The collector grid lines extend along the first direction L1, and the collector grid lines with different polarities are alternately and spaced along the second direction L2. The spacing here can avoid short circuits. The alternation here means that in the second direction L2, an N-type collector grid line is followed by a P-type collector grid line and then an N-type collector grid line. The first direction L1 is different from the second direction L2, and the angle between the two is not limited. For example, they can be perpendicular or nearly perpendicular to each other. The back contact cell here can be a whole cell, or it can be a half cell, a three-piece cell, a four-piece cell, etc., and there is no specific limitation on this.

[0065] Reference Figure 1 , the conductive backplane 1 includes: a conductive layer 12, and an insulating layer 11 located between the conductive layer 12 and the back contact battery cell 2. The conductive layer 12 here is formed of a material that can conduct electricity, for example, it can be a metal foil, such as copper-aluminum foil, aluminum foil, copper foil aluminum-plated, copper foil nickel-plated, copper foil tin-plated, aluminum foil copper-plated, aluminum foil tin-plated, aluminum foil nickel-plated, etc., and there is no specific limitation on this. The insulating layer 11 can be a single-layer structure or a multi-layer structure. For example, the insulating layer 11 can be a PO (polypropylene oxide)\PE (polyethylene)\PF (phenolic resin)\PET (polyethylene terephthalate) laminated structure. Alternatively, the insulating layer 11 can be EPE (expandable polyethylene) or EVA (ethylene-vinyl acetate copolymer), and the color of the insulating layer can be white or black, etc. Refer to Figure 1 The conductive backplane 1 may further include: a rear encapsulation film 13 and a backplane 14 sequentially stacked on the side of the conductive layer 12 away from the back contact cell 2. The material of the backplane 14 may be selected from at least one of TPC (transparent backplane), PET (polyethylene terephthalate) backplane, TPT (polyvinyl fluoride composite film) backplane, and CPC (double-sided coating type) backplane.

[0066] Reference Figure 2 , Figure 4 and Figure 5 The conductive layer 12 includes: a plurality of finger-shaped conductive structures 121 extending along the second direction L2, and an insulating gap 122 located between adjacent finger-shaped conductive structures 121. The first direction L1 is different from the second direction L2, and the angle between the two is not limited, for example, the two can be perpendicular to each other. Figure 1 , Figures 3 to 5, a through hole 111 is provided in the insulating layer 11, and the shape and size of the through hole 111 are not specifically limited. For the same through hole 111, at one end of the through hole 111, a part of the finger-shaped conductive structure 121 will be exposed, and at the other end of the through hole 111, a part of the collector grid line will be exposed. A bonding material 112 may be provided in the through hole 111, and the part of the finger-shaped conductive structure 121 located at both ends of the same through hole 111 and the collector grid line at that position may be electrically connected, thereby realizing the collection and conduction of current. There is no specific limitation on the shape of the through hole 111, for example, it may be rectangular, circular or other shapes. The bonding material 112 may be a conductive glue, solder paste, etc., or the bonding material 112 may contain metal components such as silver, copper, lead, bismuth, zinc, nickel, etc., and there is no specific limitation on the specific composition of the bonding material 112.

[0067] In the area of ​​the conductive layer 12 corresponding to one back contact cell 2, the number of the finger-shaped conductive structures 121 is a first number, which is a natural number. In the process of counting the number of the finger-shaped conductive structures 121, all the finger-shaped conductive structures 121 along the first direction need to be included. For example, Figure 2 The conductive layer 12 in the embodiment includes 10 finger-shaped conductive structures 121. The ratio of the width d1 of the insulating gap 122 to the first number is 18 to 125; the width d1 is in micrometers (μm). Figure 2 , Figure 4 and Figure 5 , the direction where the width d1 of the insulating gap 122 is located is perpendicular to the tangent of the contour line of the insulating gap 122. The width d1 of the insulating gap in the conductive layer 12 may be the width of the insulating gap at any position in the conductive layer 12, or the average value of the widths of the insulating gaps at multiple positions in the conductive layer 12, and is not specifically limited thereto.

[0068] In the present application, a partial area of ​​the finger-shaped conductive structure 121 at the through hole 111 is electrically connected to the collector grid line at the corresponding position to realize current collection and conduction. The width d1 of the insulating gap 122 in the conductive layer 12 will affect the size of the finger-shaped conductive structure 121, and then affect the resistance, and affect the current collection and conduction effect. Therefore, in the area corresponding to a back-contact battery cell 2 in the conductive layer 12, the first number of finger-shaped conductive structures 121 and the width d1 of the insulating gap 122 are closely related to the current conduction quality. Specifically, as the first number of the finger-like conductive structures 121 in the conductive layer 12 corresponding to a back contact cell 2 increases, it is beneficial to increase the current collection capacity of the back contact cell 2 and reduce the resistance loss, thereby improving the power of the photovoltaic module. However, when the first number increases to a certain extent, the boundary effect of improving the current collection capacity and reducing the resistance loss gain is reduced; secondly, if there are too many finger-like conductive structures 121, it will also increase the difficulty of aligning the collector grid line and the conductive backplane 1, and the manufacturing precision requirements for the collector grid line and the conductive layer 12 will be increased, which increases the manufacturing difficulty; in addition, too many finger-like conductive structures 121 will reduce the effective area of ​​the back contact cell 2 surface for absorbing light, thereby reducing the photoelectric conversion efficiency; thirdly, too many finger-like conductive structures 121 will increase the length of the insulating gap 122, and too many finger-like conductive structures 121 will also increase the turning in the process of removing the waste wire, forming the insulating gap 122. The probability of the waste wire being torn off increases during the waste removal process, which will lead to a decrease in the waste removal efficiency on the one hand, and on the other hand, due to the partial residual waste wire, it is easy to cause the adjacent finger-like conductive structures 121 to overlap and short-circuit.In order to reduce the probability of the waste wire being torn off, if the width d1 of the insulating gap 122 is increased, too much waste wire will be removed. On the one hand, too much waste wire removal affects the effective area of ​​the conductive layer 12. The reduction in the effective area of ​​the conductive layer 12 leads to an increase in the overall resistivity, thereby reducing the current collection efficiency. Therefore, selecting a suitable first number requires finding a balance between the current collection capacity of the back contact cell 2, resistance loss, illumination area utilization, waste wire removal efficiency and cost, so as to achieve the best performance and cost-effectiveness balance. At the same time, the role of the insulating gap 122 between adjacent finger-shaped conductive structures 121 in the conductive layer 12 is The main purpose is to avoid the short circuit problem. Increasing the width d1 of the insulating gap 122 can reduce the risk of short circuit and the probability of waste wire tearing off. However, if the width d1 of the insulating gap 122 is too large, more waste will be removed corresponding to the insulating gap 122, that is, more conductive material will be removed from the conductive layer 12, resulting in more material waste, higher cost, and a smaller effective area of ​​the conductive layer 12, with a larger resistance. In addition, if the width d1 of the insulating gap 122 is too small, the waste wire is easily torn off during the waste removal process, the waste removal efficiency is low, and there is also a risk of insulation reliability. Therefore, selecting a suitable width d1 of the insulating gap 122 is a key factor in the cost of manufacturing. It is to find a balance between cost, resistance loss, short circuit risk and waste removal efficiency to achieve the best performance and cost-effectiveness balance; it should be noted that, in the case of optimizing and balancing multiple factors such as the current collection capacity of the back contact battery cell 2, resistance loss, alignment difficulty of the collector grid line and the conductive backplane 1, illumination area utilization, waste removal efficiency, short circuit risk, cost, etc., the first number here can be selected from 12 to 28, and the width d1 of the insulating gap 122 here can be selected from 500μm to 1500μm, 500 / 28=17.8, 1500 / 12=125, so this application In the figure, the ratio of the width d1 of the insulating gap 122 to the first number is 18 to 125. This ratio range is a suitable ratio range selected when the current transmission efficiency, resistance loss, illumination area utilization, short circuit risk, waste removal efficiency of the back contact cell 2, and the cost and process are relatively balanced. Therefore, in this photovoltaic module, the back contact cell has a strong current collection capacity and low resistance loss, a high illumination area utilization, a high power generation efficiency of the back contact cell, a low manufacturing cost, a relatively simple preparation process, a high yield, and a low short circuit risk. At the same time, the probability of waste silk tearing is small, and the waste removal efficiency is high.

[0069] For example, the ratio of the width d1 of the insulating gap 122 to the first number may be 18, 19.2, 20, 25, 30, 35, 40, 50, 60, 62.5, 70, 75, 80, 90, 93.75, 95, 100, 110, 120, or 125.

[0070] Table 1: Relationship between the width of the insulation gap, the first number, and the success rate of insulation gap removal

[0071]

[0072] Table 2: Relationship between the width of the insulation gap, the first number, and the power of the photovoltaic module

[0073]

[0074] Referring to Table 1 and Table 2 above, Table 1 is a table showing the relationship between the width of the insulating gap, the first number, and the success rate of insulating gap removal for a conductive layer of a certain material during actual application. Table 2 is a table showing the relationship between the width of the insulating gap, the first number, and the power of the photovoltaic module for the conductive layer of the material in Table 1 during actual application. In Table 1 and Table 2, width refers to the width of the insulating gap, in millimeters; in Table 1, success rate refers to the probability that the waste wire will not be torn off during the tearing process in the area corresponding to a back contact cell in the conductive layer. In order to facilitate the removal of waste wire, in actual application, the success rate is usually required to be 80% or above; in Table 2, power change refers to the power of the photovoltaic module for a certain cell, with the first number 18 and the width of the insulating gap being 800μm as the benchmark. Under different insulating gap widths and first numbers, the power change of the photovoltaic module is in W (watt). In actual application, the power loss of the photovoltaic module is acceptable within 0.2W; in Table 1 and Table 2, the first number refers to the number of finger-shaped conductive structures in the area corresponding to a back contact cell in the conductive layer. It can be concluded from Table 1 that for the same first number, the larger the width of the insulating gap, the higher the success rate. It can be concluded from Table 2 that, for the same first number, the larger the width of the insulating gap is, the greater the power loss of the photovoltaic module is; for the same width of the insulating gap, the power loss of the photovoltaic module is generally smaller as the first number increases.

[0075] When the tearing success rate is considered to be greater than or equal to 80%: in Table 1, when the first number is 10 or 11, the width of the insulating gap needs to be greater than or equal to 300 μm; in Table 1, when the first number is 12 or 13, the width of the insulating gap needs to be greater than or equal to 400 μm; in Table 1, when the first number is 14, the width of the insulating gap needs to be greater than or equal to 500 μm; in Table 1, when the first number is 15, the width of the insulating gap needs to be greater than or equal to 700 μm; in Table 1, when the first number is 16, 17, 18 In the case of , 19, 20, 21, and 22, the width of the insulating gap needs to be greater than or equal to 600μm; in Table 1, when the first number is 23, 24, and 25, the width of the insulating gap needs to be greater than or equal to 800μm; in Table 1, when the first number is 26, the width of the insulating gap needs to be greater than or equal to 1200μm; in Table 1, when the first number is 27, the width of the insulating gap needs to be greater than or equal to 1300μm; in Table 1, when the first number is 28, the width of the insulating gap needs to be greater than or equal to 1400μm. Therefore, when the insulating gap is 500μm to 1500μm, for the case of the first number being 10 to 28, it can correspond to the requirement that the tearing success rate is greater than or equal to 80%; when the insulating gap is 600μm to 1200μm, for the case of the first number being 10 to 26, it can correspond to the requirement that the tearing success rate is greater than or equal to 80%. When the power loss of the photovoltaic module is mainly considered to be within 0.2W: in Table 2, when the first number is 13, the width of the insulating gap needs to be less than or equal to 500μm; in Table 2, when the first number is 14, the width of the insulating gap needs to be less than or equal to 600μm; in Table 2, when the first number is 15 or 16, the width of the insulating gap needs to be less than or equal to 700μm; in Table 2, when the first number is 17, the width of the insulating gap needs to be less than or equal to 800μm; in Table 2, when the first number is 18, the width of the insulating gap needs to be less than or equal to 900μm; in Table 2, when the first number is 19, the width of the insulating gap needs to be less than or equal to 100 0μm; when the first number is 20, the width of the insulating gap needs to be less than or equal to 1100μm; when the first number is 21, the width of the insulating gap needs to be less than or equal to 1200μm; when the first number is 22, the width of the insulating gap needs to be less than or equal to 1300μm; when the first number is 23, the width of the insulating gap needs to be less than or equal to 1500μm; when the first number is 24, the width of the insulating gap needs to be less than or equal to 1600μm; when the first number is 25 or 26, the width of the insulating gap needs to be less than or equal to 1700μm; when the first number is 27 or 28, the width of the insulating gap is less than or equal to 1800μm.Therefore, when the insulation gap is between 500μm and 1500μm, for the first number being 12 to 28, the power loss of the photovoltaic module can be kept within 0.2W; when the insulation gap is between 600μm and 1200μm, for the first number being 14 to 28, the power loss of the photovoltaic module can be kept within 0.2W.

[0076] Therefore, in the present application, in combination with Table 1 and Table 2, for the conductive layer of the above-mentioned material, in order to meet both the above-mentioned success rate requirements and the above-mentioned power loss requirements: the first number is 13, the width of the insulating gap is 400μm to 500μm, for example, the width of the insulating gap can be 400μm, 450μm, 420μm, 460μm, 480μm, 500μm, and the ratio of the width of the insulating gap to the first number is 30.77 to 38.46, where 400 / 13=30.77, 500 / 13=38.46; the first number is 14, the width of the insulating gap is 500μm to 600μm, for example, the width of the insulating gap can be 500μm, 550μm, 520μm, 560μm, 580μm, 600μm, the ratio of the width of the insulating gap to the first number is 35.71 to 42.86, where 500 / 14=35.71, 600 / 14=42.86; the first number is 15, the width of the insulating gap is 700μm, and the ratio of the width of the insulating gap to the first number is 46.67, where 700 / 15=46.67; the first number is 16, the width of the insulating gap is 700μm, and the ratio of the width of the insulating gap to the first number is 43.75 (700 / 16=43.75); the first number is 17, the width of the insulating gap is 600μm to 800μm μm, for example, the width of the insulating gap can be 600μm, 700μm, 720μm, 750μm, 760μm, 780μm, 775μm, 800μm, and the ratio of the width of the insulating gap to the first number is 35.29 to 47.06, wherein 600 / 17=35.29, 800 / 17=47.06; the first number is 18, and the width of the insulating gap is 600μm to 900μm, for example, the width of the insulating gap can be 600μm, 650μm, 700μm, 720μm, 750μm, 770μm, 790μm, 800μm, 810μm, 840μm, 850μm, 880μm, 9 00μm, the ratio of the width of the insulating gap to the first number is greater than or equal to 33.33 to 50, wherein 600 / 18=33.33, 900 / 18=50; the first number is 19, the width of the insulating gap is 600μm to 1000μm, for example, the width of the insulating gap can be 600μm, 650μm, 700μm, 730μm, 750μm, 780μm, 800μm, 820μm, 850μm, 890μm, 900μm, 950μm, 1000μm, and the ratio of the width of the insulating gap to the first number is 31.58 to 52.63, wherein 600 / 19=31.58, 1000 / 19=52.63; the first number is 20, the width of the insulating gap is 600μm to 1100μm, for example, the width of the insulating gap can be 600μm, 650μm, 700μm, 800μm, 820μm, 850μm, 900μm, 930μm, 950μm, 990μm, 1000μm, 1080μm, 1050μm, 1100μm, and the ratio of the width of the insulating gap to the first number is 30 to 55, where 600 / 20=30 and 1100 / 20=55; the first number is 21, the width of the insulating gap is 600μm to 1200μm, for example, the width of the insulating gap can be 600μm, 650μm, 7 00μm, 800μm, 850μm, 900μm, 950μm, 1000μm, 1050μm, 1100μm, 1150μm, 1200μm, the ratio of the width of the insulating gap to the first number is 28.57 to 57.14, wherein 600 / 21=28.57, 1200 / 21=57.14; the first number is 22, the width of the insulating gap is 600μm to 1300μm, for example, the width of the insulating gap can be 600μm, 650μm, 700μm, 800μm, 850μm, 900μm, 950μm, 1000μm, 1050μm, 1100μm, 1150μm, 1200μm, 200μm, 1250μm, 1300μm, the ratio of the width of the insulating gap to the first number is 27.27 to 59.1, wherein 600 / 22=27.27, 1300 / 22=59.1; the first number is 23, the width of the insulating gap is 800μm to 1500μm, for example, the width of the insulating gap can be 800μm, 900μm, 950μm, 1000μm, 1050μm, 1100μm, 1150μm, 1200μm, 1250μm, 1300μm, 1350μm, 1400μm, 1450μm, 1500μm, and the ratio of the width of the insulating gap to the first number is 34.78 to 59.1, where 800 / 23=34.78, 1500 / 23=65.22; the first number is 24, the width of the insulating gap can be 800μm to 1600μm, for example, the width of the insulating gap can be 800μm, 900μm, 950μm, 1000μm, 1050μm, 1100μm, 1150μm, 1200μm, 1250μm, 1300μm, 1350μm, 1400μm, 1450μm, 1500μm, 1600μm, the ratio of the width of the insulating gap to the first number is 33.33 to 66.67, where 800 / 24=33.33, 1600 / 24=66.67; the first number is 25, the width of the insulating gap can be 800μm to 1700μm, for example, the width of the insulating gap can be 800μm, 900μm, 950μm, 1000μm, 1050μm, 1100μm, 1150μm, 1200μm, 1250μm, 1300μm, 1350μm, 1400μm, 1450μm, 1500μm, 1600μm, 1700μm, the width of the insulating gap The ratio of the width of the insulating gap to the first number is 32 to 68, wherein 800 / 25=32, 1700 / 25=68; the first number is 26, the width of the insulating gap can be 1200μm to 1700μm, for example, the width of the insulating gap can be 1200μm, 1250μm, 1300μm, 1350μm, 1400μm, 1450μm, 1500μm, 1600μm, 1700μm, and the ratio of the width of the insulating gap to the first number is 32 to 6 8, where 1200 / 26=46.15, 1700 / 26=65.38; the first number is 27, the width of the insulating gap can be 1300μm to 1800μm, for example, the width of the insulating gap can be 1300μm, 1350μm, 1400μm, 1450μm, 1500μm, 1600μm, 1700μm, 1800μm, and the ratio of the width of the insulating gap to the first number is 48.15 to 66.67, where 13 00 / 27=48.15, 1800 / 27=66.67; the first number is 28, the width of the insulating gap can be 1400μm to 1800μm, for example, the width of the insulating gap can be 1400μm, 1450μm, 1500μm, 1600μm, 1700μm, 1800μm, the ratio of the width of the insulating gap to the first number is 50 to 64.29, wherein 1400 / 28=50, 1800 / 28=64.29. .

[0077] It should be noted that, in the present application, there is no limitation on the method of removing waste from the conductive layer, for example, it can be laser scribing, acid etching, mold stamping, etc.

[0078] Optionally, the width d1 of the insulating gap 122 is 500um to 1500um. When the width d1 of the insulating gap 122 is within this range, a good balance is found between cost, resistance loss, short circuit risk, and waste removal efficiency, and the best performance and cost-effectiveness balance can be achieved. At the same time, in combination with Table 1 and Table 2, when d1 is within the above range, more first quantities can meet both the above success rate requirements and the above power loss requirements, that is, the tearing success rate is higher and the power loss is smaller.

[0079] For example, the width d1 of the insulating gap 122 may be 500 μm, 600 μm, 700 μm, 750 μm, 800 μm, 850 μm, 900 μm, 1000 μm, 1200 μm, 1300 μm, or 1500 μm.

[0080] Optionally, the width d1 of the insulating gap 122 is 600um to 1200um. When the width d1 of the insulating gap 122 is within this range, a good balance is found between cost, resistance loss, short circuit risk, and waste removal efficiency, and the best performance and cost-effectiveness balance can be achieved. At the same time, in combination with Table 1 and Table 2, when d1 is within the above range, more first quantities can achieve a higher success rate and a smaller power loss, that is, a higher success rate of tearing and a smaller power loss.

[0081] For example, the width d1 of the insulating gap 122 may be 600 μm, 650 μm, 680 μm, 1200 μm, 700 μm, 750 μm, 800 μm, 850 μm, 900 μm, 1000 μm, or 1100 μm.

[0082] Optionally, in the area of ​​the conductive layer 12 corresponding to a back contact cell 2, the number of the finger-shaped conductive structures 121 is a first number, and the first number ranges from 12 to 28. The first number within this range finds a good balance between the current collection capacity, resistance loss, illumination area utilization, waste removal efficiency and cost of the back contact cell 2, and can achieve the best performance and cost-effectiveness balance. Moreover, in combination with the above Tables 1 and 2, in order to meet the above requirements of success rate and power loss, the above first number can have more insulation gap width options, that is, the tearing success rate is higher, the power loss is smaller, and the insulation gap width options are more.

[0083] For example, the first number may be 12, 13, 14, 15, 16, 18, 20, 24, 17, 19, 21, 22, 23, 24, 25, 26, 27, 28.

[0084] Optionally, in the area of ​​the conductive layer 12 corresponding to a back contact cell 2, the number of finger-shaped conductive structures 121 is a first number, and the first number ranges from 16 to 24. The first number within this range finds a good balance between the current collection capacity, resistance loss, illumination area utilization, waste removal efficiency and cost of the back contact cell 2, and can achieve the best performance and cost-effectiveness balance. Moreover, in combination with the above-mentioned Table 1 and Table 2, the above-mentioned first number can correspond to a higher tearing success rate and less power loss, and there are more insulation gap width options, that is, the tearing success rate is higher, the power loss is smaller, and the insulation gap width options are more.

[0085] For example, the first number may be 16, 18, 20, 24, 17, 19, 21, 22, 23, 24.

[0086] Optionally, the length of the insulating gap 122 in the region of the conductive layer 12 corresponding to one back-contact cell 2 is a first length. The first length is the size of the insulating gap 122 in the region of the conductive layer 12 corresponding to one back-contact cell 2 along the extension direction of the insulating gap 122. In the region of the conductive layer 12 corresponding to one back-contact cell 2 along the extension direction of the insulating gap 122, the insulating gap 122 includes a curved segment and a straight segment, so the first length here is the sum of the length of the curved segment and the length of the straight segment contained therein. In the area of ​​the conductive layer 12 corresponding to a back-contact battery cell 2, the longer the length of the insulating gap 122, the greater the probability that the waste wire will be torn off during the tearing process, and the waste removal efficiency is low. At the same time, in the area of ​​the conductive layer 12 corresponding to a back-contact battery cell 2, the length of the insulating gap 122 is approximately equal to the length of the contour line of the finger-shaped conductive structure 121 in the area of ​​the conductive layer 12 corresponding to a back-contact battery cell 2. If the first length is too short, the size of the finger-shaped conductive structure 121 in the area of ​​the conductive layer 12 corresponding to a back-contact battery cell 2 is small, the current collection effect is poor, and the resistance loss is large. Therefore, selecting a suitable first length requires finding a balance between waste removal efficiency, current collection and resistance loss. Increasing the width d1 of the insulating gap 122 can reduce the risk of short circuit and the probability of waste wire being torn off. However, if the width d1 of the insulating gap 122 is too large, more waste will be removed from the insulating gap 122, that is, more conductive material will be removed from the conductive layer 12, resulting in more material waste, higher cost, and a smaller effective area and greater resistance of the conductive layer 12. In addition, if the width d1 of the insulating gap 122 is too small, the waste wire will be easily torn off during the waste removal process, the waste removal efficiency will be low, and there will also be risks in the insulation reliability. Therefore, selecting a suitable width d1 of the insulating gap 122 is to find a balance between cost, resistance loss, short circuit risk and waste removal efficiency to achieve the best performance and cost-effectiveness balance. When the unit of the first length and the unit of the width of the insulating gap 122 are the same, the ratio of the first length to the width d1 of the insulating gap 122 is 1200 to 9000, which is the result of a good balance between waste removal efficiency, current collection, resistance loss, cost and short circuit risk. It should be noted that, at each position of the insulating gap 122 , the direction of its length and the direction of its width are perpendicular to each other.

[0087] For example, the ratio of the first length to the width of the insulating gap may be 1200, 1500, 1800, 2000, 2500, 3000, 3200, 3500, 4000, 4500, 5000, 5500, 6000, 6500, 7000, 7500, 8000, 8500, or 9000.

[0088] It should be noted that the specific size of the first length of the insulating gap 122 in the area of ​​the conductive layer 12 corresponding to one back contact cell 2 is not limited. For example, the first length can be: 1655mm, 1287mm, 1379mm, 1287mm, 1471mm, 1563mm, 1747mm, 1800mm, 1839mm, 1931mm, 2023mm, 2115mm, 2207mm, etc.

[0089] It should be noted that the ratios or proportions between one-dimensional dimensions such as length, width, etc. mentioned throughout this application all refer to the ratio range when the units of the above dimensions are the same.

[0090] Optional, see Figure 2 , the length of the finger-shaped conductive structure 121 is d2, and the direction of the length d2 of the finger-shaped conductive structure 121 is parallel to the second direction L2. If the length d2 of the finger-shaped conductive structure 121 is small, the current collection effect is poor and the resistance loss is large. If the length d2 of the finger-shaped conductive structure 121 is large, it is easy to tear off during the process of tearing off the waste silk, and the waste removal efficiency is low. Therefore, selecting a suitable length of the finger-shaped conductive structure 121 is the result of optimizing the balance between the current collection effect, the resistance loss and the waste removal efficiency. Increasing the width d1 of the insulating gap 122 can reduce the risk of short circuit and the probability of waste wire being torn off. However, if the width d1 of the insulating gap 122 is too large, more waste will be removed corresponding to the insulating gap 122, that is, more conductive material will be removed from the conductive layer 12, resulting in more material waste, higher cost, and a smaller effective area of ​​the conductive layer 12 and a larger resistance. In addition, if the width d1 of the insulating gap 122 is too small, the waste wire will be easily torn off during the waste removal process, the waste removal efficiency will be low, and there will also be risks in the insulation reliability. Therefore, selecting a suitable width d1 of the insulating gap 122 is to find a balance between cost, resistance loss, short circuit risk and waste removal efficiency to achieve the best performance and cost-effectiveness balance. The ratio of the length d2 of the finger-like conductive structure 121 to the width d1 of the insulating gap 122 is 60 to 450, which is also the result of a good balance between waste removal efficiency, current collection, resistance loss, cost and short circuit risk.

[0091] It should be noted that the length d2 of the finger-shaped conductive structure 121 may be: the length of any one finger-shaped conductive structure 121 in the conductive layer 12 , or the average length of multiple finger-shaped conductive structures 121 in the conductive layer 12 , which is not specifically limited.

[0092] For example, the ratio of the length d2 of the finger-shaped conductive structure 121 to the width d1 of the insulating gap 122 may be 60, 70, 90, 100, 120, 150, 200, 220, 250, 255, 280, 300, 350, 360, 380, 400, 420, 440, or 450.

[0093] Optional, see Figure 2 , Figure 4 and Figure 5 , in the second direction L2, the finger-shaped conductive structure 121 includes a relative head region 1211 and a tail region 1212, and an intermediate region connecting the head region 1211 and the tail region 1212. The intermediate region contains the center of the finger-shaped conductive structure, and the center of the intermediate region may or may not coincide with the center of the finger-shaped conductive structure, and there is no specific limitation on this. The center of the head region 1211, the center of the finger-shaped conductive structure, and the center of the tail region 1212 may be collinear. The width of the head region 1211 is less than or equal to the width of the tail region 1212, and the direction of the width of the region here is parallel to the first direction L1. It should be noted that the relative sizes of the widths of the intermediate region and the head region 1211 are not limited. For example, Figure 2 and Figure 4 In the embodiment, the width of the middle region is greater than the width of the head region 1211, and in the second direction L2, the width of the finger-shaped conductive structure 121 increases from the head region 1211 to the tail region 1212. For another example, Figure 5 , the width of the middle region is equal to the width of the head region 1211. Here, the width of the head region 1211 may refer to the width at any position in the head region, or the average value of the widths at multiple positions. The width of the middle region and the width of the tail region 1212 are determined in the same manner as the width of the head region. For example, Figure 2 In the example, the width of the tail region 1212 may be as follows: Figure 2 As shown in d3.

[0094] Optionally, for one finger-shaped conductive structure 121 , the width of the insulating gap 122 at the head region 1211 and the width of the insulating gap 122 at the tail region 1212 are both greater than or equal to the width of the insulating gap 122 at the middle region. Specifically, for a finger-shaped conductive structure 121: at the head area 1211 and the tail area 1212, there are many turns or inflection points. During the waste wire removal process, the stress is large or stress concentration is easily generated at these positions, and the waste wire is usually easy to tear off, while the middle area is relatively straight, and the waste wire is usually not easy to tear off. Therefore, for a finger-shaped conductive structure 121: the width of the insulating gap 122 at the head area 1211 and the width of the insulating gap 122 at the tail area 1212 are both large. Then, during the waste removal process, the head area 1211 and the tail area 1212 with more turns or inflection points are not easy to tear off, the waste removal is more continuous, the waste removal efficiency is high, and the width of the insulating gap 122 at the middle area is smaller, the size of the retained finger-shaped conductive structure is larger, and the resistance loss can also be reduced. For a finger-shaped conductive structure 121: the width of the insulating gap 122 at the head region 1211 refers to the width of the insulating gap 122 at any position of the head region 1211, or the average value of the widths at multiple positions, or may refer to the width of the insulating gap 122 at either side of the first direction L1 at the center of the head region 1211, or the average value of the widths at both sides. The determination method of the width of the insulating gap 122 at the tail region 1212 and the width of the insulating gap 122 at the middle region are the same as the determination method of the width of the insulating gap 122 at the head region 1211, and will not be repeated here.

[0095] It should be noted that, in this case, whether the width of the insulating gap 122 at the head region 1211 is equal to the width of the insulating gap 122 at the tail region 1212 is not specifically limited, and the relative size between the two is not specifically limited. The difference between the width of the insulating gap 122 at the head region 1211, the width of the insulating gap 122 at the tail region 1212, and the width of the insulating gap 122 at the middle region is not specifically limited.

[0096] It should be noted that the head region 1211 of a finger-shaped conductive structure 121 includes the endpoint of the finger-shaped conductive structure in the head region, and the tail region 1212 of a finger-shaped conductive structure 121 includes the endpoint of the finger-shaped conductive structure in the tail region, and the two endpoints are opposite in the second direction L2. Generally, the area of ​​the head region 1211 of a finger-shaped conductive structure 121 can be smaller than the area of ​​its tail region. For a finger-shaped conductive structure 121, in the present application, the division method of its head region 1211, middle region and tail region 1212 can be: in the second direction, the length of the head region 1211 can be less than or equal to the length of the tail region, and the length of the middle region is greater than or equal to the length of the tail region. For example, for a finger-shaped conductive structure 121, the length of the head region 1211 in the second direction is 1 / 5 of the finger-shaped conductive structure, the length of the tail region in the second direction can be 3 / 10 of the finger-shaped conductive structure, and the length of the middle region in the second direction can be 1 / 2 of the finger-shaped conductive structure. Alternatively, for a finger-shaped conductive structure 121, the length of the head region 1211 in the second direction and the length of the tail region 1212 in the second direction are both 1 / 5 of the finger-shaped conductive structure, and the length of the tail region in the second direction can be 3 / 5 of the finger-shaped conductive structure.

[0097] Optional, see Figure 2 , Figure 4 and Figure 5, the width of the finger-shaped conductive structure 121 at the center of the head region 1211 is the first width d4; the width of the finger-shaped conductive structure at the center thereof is the second width d5. The directions of the first width d4 and the second width d5 ​​are both parallel to the first direction L1. For a finger-shaped conductive structure 121: the ratio of the width of the insulating gap 122 at the center of the head region 1211 to the first width is the first ratio, and the ratio of the width of the insulating gap 122 at the center of the finger-shaped conductive structure 121 to the second width is the second ratio. For the same finger-shaped conductive structure 121, the first ratio is greater than or equal to the second ratio, that is, relative to the center position of the finger-shaped conductive structure, at the center position of the head area 1211 of the finger-shaped conductive structure, the width of the insulating gap 122 is relatively larger. Specifically, for a finger-shaped conductive structure 121: there are more turns or inflection points at the head area 1211, and during the waste wire removal process, the stress is larger at these positions, and the waste wire is usually easy to tear off, while the middle area is relatively straight, and the waste wire is usually not easy to tear off, and the center position of the finger-shaped conductive structure 121 is usually relatively straight. Therefore, for a finger-shaped conductive structure 121: the width of the insulating gap 122 at the head area 1211 is relatively larger, then during the waste removal process, it is not easy to tear off at the head area 1211 with more turns or inflection points, the waste removal continuity is higher, and the waste removal efficiency is high. The width of the insulating gap 122 at the center of the head region 1211 may refer to the width of the insulating gap 122 at either side of the center of the head region 1211 along the first direction L1, or the average value of the widths of the two sides. The method for determining the width of the insulating gap 122 at the center of the finger-shaped conductive structure 121 is the same as the method for determining the width of the insulating gap 122 at the center of the head region 1211, and will not be repeated here.

[0098] Optionally, for a finger-shaped conductive structure 121: the width of the insulating gap 122 at the center of the head area 1211 is in a first ratio to the first width, and the first ratio is 6 to 44. The width of the insulating gap is related to both the insulation effect and the waste removal efficiency, and the width of the finger-shaped conductive structure is related to both the conductive efficiency and the resistance loss. When the first ratio is within this range, a good balance is achieved in the insulation effect, the waste removal efficiency, the conductive efficiency and the resistance loss, which is beneficial to improving the performance of the photovoltaic module.

[0099] For example, the first ratio may be 6, 8, 10, 15, 20, 25, 30, 33, 35, 40, 42, or 44.

[0100] The ratio of the width of the insulating gap 122 at the center of the finger-shaped conductive structure 121 to the second width is a second ratio of 8 to 55. Similarly, within this range, the second ratio achieves a good balance among the insulation effect, waste removal efficiency, conductive efficiency and resistance loss, which is beneficial to improving the performance of photovoltaic modules.

[0101] For example, the second ratio may be 8, 10, 12, 15, 20, 25, 30, 31.5, 35, 40, 45, 50, 52, or 55.

[0102] Optionally, for one finger-shaped conductive structure 121: the ratio of the width of the insulating gap at the center of the head region 1211 to the width of the insulating gap at the center of the finger-shaped conductive structure 121 is 1 to 3. When the ratio is 1, the width of the insulating gap at the center of the head region 1211 is equal to the width of the insulating gap at the center of the finger-shaped conductive structure 121, the process parameters for setting the insulating gap are compatible, and the process for setting the insulating gap is simple. When the ratio is greater than 1 and less than or equal to 3, on the one hand, there are many turns or inflection points at the head region 1211. During the waste wire removal process, the stress at these positions is relatively large, and the waste wire is usually easy to tear off, while the central position of the finger-shaped conductive structure is usually relatively straight, and the waste wire is usually not easy to tear off. Therefore, for a finger-shaped conductive structure 121: the width of the insulating gap 122 at the head region 1211 is relatively larger, so during the waste removal process, the head region 1211 with more turns or more inflection points is not easy to tear off, and the waste removal continuity is higher and the waste removal efficiency is high; on the other hand, for a finger-shaped conductive structure 121: the width of the insulating gap 122 at the head region 1211 is not too large, so as to avoid material waste. The method for determining the width of the insulating gap at the center of the head region 1211 refers to the above-mentioned record. The width of the insulating gap at the center of the finger-shaped conductive structure is the same as the method for determining the width of the insulating gap at the center of the head region 1211. In order to avoid repetition, it will not be repeated here.

[0103] For example, for a finger-shaped conductive structure 121, the ratio of the width of the insulating gap 122 at the center of the head region 1211 to the width of the insulating gap 122 at the center of the finger-shaped conductive structure may be 1, 1.2, 1.5, 1.8, 2, 2.2, 2.5, 2.6, 2.7, 2.8, 2.9, or 3. Figure 2 , Figure 4 and Figure 5, in the same finger-shaped conductive structure 121: the width at the center of the tail area 1212 is the third width d3, and the width at the center of the head area 1211 is the first width d4; the ratio of the third width d3 to the first width d4 is 2.5 to 5. Specifically, in the same finger-shaped conductive structure 121, the current is usually concentrated from the head area 1211 to the tail area 1212, or in other words, in the same finger-shaped conductive structure 121, the current flowing through the tail area 1212 is larger. The ratio of the above d3 and d4 is less than 2.5, and the width of the tail area 1212 is too small to adapt to a larger current. The ratio of the above d3 and d4 is greater than 2.5, and the width of the tail area 1212 is too large to adapt to a larger current for fast and efficient transmission, but it will cause material waste. Therefore, the ratio of the third width d3 to the first width d4 is 2.5 to 5, which is not only convenient for efficient transmission and collection of current, but also avoids material waste.

[0104] For example, the ratio of the third width d3 to the first width d4 may be 2.5, 2.6, 2.8, 3, 3.3, 3.5, 3.7, 3.9, 4, 3.75, 4.5, 4.2, 4.8, or 5.

[0105] Optionally, the collector grid line is electrically connected with an electrical connection portion, which is used to electrically connect to a conductive interconnect (such as a finger-shaped conductive structure 12) to collect current. The electrical connection portion is located in the through hole 111 of the insulating layer 11. A partial area of ​​the finger-shaped conductive structure 12 is electrically connected to the collector grid line through the electrical connection portion. For example, the above-mentioned bonding material 112 is arranged on the surface of the electrical connection portion away from the collector grid line, and the electrical connection portion and the bonding material 112 thereon are located in the through hole 111, and are in contact with a partial area of ​​the finger-shaped conductive structure 12 to achieve electrical connection.

[0106] It should be noted that the electrical connection portion here can be directly set on the collector grid line, the electrical connection portion can be a part of the collector grid line itself, or it can be set separately. In the case where the electrical connection portion is a part of the collector grid line itself, the electrical connection portion can be a thickened section of the collector grid line. Therefore, the back-contact cell 2 of the present application can be a back-contact cell without a bus grid line or with fewer bus grid lines, which can reduce silver paste loss, improve battery efficiency and component power and other advantages, and can enter the mass production stage more quickly. Alternatively, the back-contact cell 2 also includes: a bus grid line, and the bus grid line extends along the second direction L2. The bus grid lines of different polarities are alternately and spaced along the first direction L1. The spacing here can avoid short circuits. The alternation here means that the bus grid lines of different polarities here refer to N-type bus grid lines and P-type bus grid lines. The polarity of the N-type bus grid line and the N-type collector grid line is the same, and the polarity of the P-type bus grid line and the P-type collector grid line is the same. The alternation here means that in the first direction L1, one or a row of N-type bus grid lines are followed by one or a row of P-type bus grid lines and then by one or a row of N-type bus grid lines. The collector grid lines and bus grid lines of the same polarity are electrically connected, and the two can be electrically connected by intersecting. The electrical connection part can be set on the bus grid line, and the electrical connection part can be a part of the bus grid line itself, or it can be set separately. In the case where the electrical connection part is a part of the bus grid line itself, the electrical connection part can be a thickened section of the bus grid line.

[0107] Optionally, the head region 1211 includes an end point away from the tail region 1212. Figure 4 , the end point of the finger-shaped conductive structure 121 and its projection on the conductive layer 12 are located within the finger-shaped conductive structure 121, and the distance d6 of the through hole 111 adjacent to the end point of the finger-shaped conductive structure 121 is 0.3mm to 1mm, and the through hole 111 adjacent to the end point of the finger-shaped conductive structure 121 corresponds to the position of the current collection point at the end of the finger-shaped conductive structure 121. If d6 is set too large, the current transmission distance is too long, resulting in more losses. If d6 is set too small, the collection performance of the current collection point may not be fully utilized, resulting in material waste. Therefore, d6 within this range is the result of an optimized balance between better current collection effect and cost, and more finger-shaped conductive structures can be set under the premise of ensuring current collection efficiency.

[0108] For example, the d6 can be 0.3 mm, 0.4 mm, 0.45 mm, 0.5 mm, 0.55 mm, 0.6 mm, 0.7 mm, 0.75 mm, 0.8 mm, 0.65 mm, 0.9 mm, or 1 mm.

[0109] Optionally, the length of the back contact cell 2 in the first direction L1 is 160 mm to 220 mm, and the width of the back contact cell 2 is less than or equal to the length. The size of the back contact cell 2 is relatively suitable. On the one hand, it can achieve better results in carrier collection. On the other hand, the size of the photovoltaic module formed by the back contact cell 2 of this size is relatively compatible with the size of existing transportation equipment such as containers, which is convenient for transportation and storage.

[0110] For example, the length of the back contact cell 2 in the first direction L1 may be 160 mm, 166 mm, 182 mm, 188 mm, 190 mm, 192 mm, 170 mm, 180 mm, 200 mm, 210 mm, or 220 mm.

[0111] Optionally, in the region of the conductive layer 12 corresponding to a back contact cell 2, the length of the insulating gap 122 is the first length. The ratio of the length of the back contact cell 2 in the first direction L1 to the first length is 0.09 to 0.12; the longer the length of the back contact cell 2, the larger the corresponding first length may be, but the larger the first length, the greater the probability of the waste wire being torn off. In the present application, the ratio of the length of the back contact cell 2 in the first direction L1 to the first length is within the above range, which can not only reduce the probability of the waste wire being torn off, but also achieve a better effect in terms of carrier collection.

[0112] For example, the ratio of the length of the back contact cell 2 in the first direction L1 to the first length may be 0.09, 0.095, 0.1, 0.099, 0.11, 0.113, 0.115, 0.118, 0.119, or 0.12.

[0113] Optionally, the ratio of the width of the back contact cell 2 to the width d1 of the insulating gap 122 is 65 to 485; the larger the width of the back contact cell 2, the larger the corresponding first length may be, but the larger the first length, the greater the probability of waste wire tearing, the larger the width d1 of the insulating gap, the smaller the probability of waste wire tearing, but it is easy to cause material waste. In this application, the ratio of the width of the back contact cell 2 to the width d1 of the insulating gap is within the above range, which can not only reduce the probability of waste wire tearing, but also achieve better results in carrier collection and reduce waste. The direction of the width of the back contact cell is perpendicular to the first direction L1.

[0114] For example, the ratio of the width of the back contact cell 2 to the width d1 of the insulating gap 122 can be 65, 80, 95, 100, 125, 150, 165, 180, 200, 225, 250, 275, 280, 300, 350, 365, 400, 415, 450, 465, 485.

[0115] Optionally, the photovoltaic module further includes: an alloy layer located between the finger-shaped conductive structure 121 and the collector grid line electrically connected to the finger-shaped conductive structure 121. The alloy layer here can be an alloy layer located between the bonding material and the collector grid line, and / or, an alloy layer located between the bonding material and the finger-shaped conductive structure 121. The material of the alloy layer is not specifically limited. By forming the alloy layer, the reliability of the electrical connection between the finger-shaped conductive structure 121 and the collector grid line electrically connected to the finger-shaped conductive structure 121 can be further improved, and the current collection effect can be further improved.

[0116] This application also provides another photovoltaic module, referring to Figure 1 The photovoltaic module comprises: a conductive back sheet 1, and a back contact cell 2 arranged on the conductive back sheet 1. The photovoltaic module may also comprise: a front encapsulation film 3 and a glass 4 sequentially located on the side of the back contact cell 2 away from the conductive back sheet 1.

[0117] The back contact cell comprises: a plurality of collector grid lines extending along a first direction L1, the collector grid lines being used to collect and conduct current. Figure 1 The conductive backplane 1 includes: a conductive layer 12, and an insulating layer 11 located between the conductive layer 12 and the back contact battery cell 2. The conductive backplane 1 may also include: a rear encapsulation film 13 and a backplane 14 sequentially stacked on the side of the conductive layer 12 away from the back contact battery cell 2. Figure 2 , Figure 4 and Figure 5 The conductive layer 12 includes: a plurality of finger-shaped conductive structures 121 extending along the second direction L2, and an insulating gap 122 located between adjacent finger-shaped conductive structures 121. The first direction L1 is different from the second direction L2, and the angle between the two is not limited. Figure 1 , Figures 3 to 5 , a through hole 111 is provided in the insulating layer 11. For the same through hole 111, at one end of the through hole 111, a part of the finger-shaped conductive structure 121 will be exposed, and at the other end of the through hole 111, a part of the collector grid line will be exposed. A bonding material 112 may be provided in the through hole 111, and the part of the finger-shaped conductive structure 121 located at both ends of the same through hole 111 may be electrically connected to the collector grid line at the position, thereby realizing current collection and conduction. The conductive backplane and back contact cell in the photovoltaic module can refer to the corresponding records above, and in order to avoid repetition, they will not be repeated here.

[0118] The former photovoltaic module mainly introduces the photovoltaic module from the first quantity and one-dimensional dimension, while the latter photovoltaic module mainly introduces the photovoltaic module from the area dimension. Both photovoltaic modules belong to the same technical concept of back-contact cells with strong current collection capability and low resistance loss, high utilization rate of illuminated area, high power generation efficiency of back-contact cells, low manufacturing cost, relatively simple preparation process, high yield, and low short circuit risk. At the same time, the probability of waste wire tearing is small and the waste removal efficiency is high. The following mainly introduces the differences between the latter photovoltaic module and the former photovoltaic module in detail, and will not repeat the similarities between the latter photovoltaic module and the former photovoltaic module.

[0119] The area of ​​all insulating gaps in the region of the conductive layer 12 corresponding to one back contact cell 2 is the first area. The area of ​​the region of the conductive layer 12 corresponding to one back contact cell 2 is the second area. The first area accounts for 1% to 40% of the second area, and the first area accounts for less than 1% of the second area. The first area is too small, or the size of the insulating gap is small. The waste silk may be easily torn off during the waste removal process, the waste removal efficiency is low, and the insulation reliability is also at risk. The second area accounts for more than 40% of the second area, and the first area is too large, or the size of the insulating gap is large. More waste is removed, that is, more conductive material is removed from the conductive layer 12, resulting in more material waste, higher cost, and the effective area of ​​the conductive layer 12 is small and the resistance is large. In the present application, the first area accounts for 1% to 40% of the second area. In this photovoltaic module, the back contact cell has a strong current collection capacity and a low resistance loss, a high utilization rate of the illuminated area, a high power generation efficiency of the back contact cell, a low manufacturing cost, a relatively simple preparation process, a high yield, and a low risk of short circuit. At the same time, the probability of waste silk tearing is small, and the waste removal efficiency is high.

[0120] For example, the ratio of the first area to the second area may be 1%, 2%, 5%, 7.5%, 10%, 11.2%, 14%, 15%, 20%, 25%, 30%, 35%, 40%. For another example, the area of ​​the region in the conductive layer 12 corresponding to one back contact cell 2 may be 17707 mm 2 , the length of all insulating gaps in the area of ​​the conductive layer 12 corresponding to the back contact cell 2 is 1655 mm, and the width of the insulating gap is 1.5 mm, then the first area can be 1655×1.5=2482.5 mm 2 , then, the ratio of the first area to the second area may be 2482.5 / 17707=14.02%. For another example, the area of ​​the region in the conductive layer 12 corresponding to one back contact cell 2 may be 17707 mm 2, the length of all insulating gaps in the area of ​​the conductive layer 12 corresponding to the back contact cell 2 is 1655 mm, and the width of the insulating gap is 0.8 mm, then the first area can be 1655×0.8=1324 mm 2 , then, the ratio of the first area to the second area may be 1324 / 17707=7.48%.

[0121] Table 3: Ratio of the first area to the second area

[0122]

[0123] For another example, referring to Table 3 above, which shows the ratio of the first area to the second area in 11 types of photovoltaic modules, in Table 3, the width of the insulating gap in the 11 types of photovoltaic modules is 0.8 mm.

[0124] It should be noted that the first area may refer to: the area of ​​all insulating gaps in the region corresponding to any back contact cell 2 in the conductive layer 12, or the average area of ​​all insulating gaps in the region corresponding to multiple back contact cells 2 in the conductive layer 12. The method for determining the second area here is the same or similar to the method for determining the first area, and will not be repeated here.

[0125] Optionally, in the region of the conductive layer corresponding to a back contact cell, the area of ​​all insulating gaps is a first area, and the first area is 360 mm 2 Up to 2700mm 2 When the first area is within this range, the back-contact cell has a strong current collection capability and low resistance loss, a high utilization rate of the illuminated area, a high power generation efficiency of the back-contact cell, a low manufacturing cost, a relatively simple preparation process, a high yield, and a low short circuit risk. At the same time, the probability of waste wire tearing is small, and the waste removal efficiency is high.

[0126] For example, the first area may be 360 ​​mm 2 、380mm 2 , 400mm 2 , 500mm 2 , 1000mm 2 、1300mm 2 、1324mm 2 、1500mm 2 , 2000mm 2 、2200mm 2 、2482.5mm 2 , 2500mm 2 、2700mm 2 .

[0127] Optionally, the area of ​​a finger-shaped conductive structure 121 is the third area, and the area of ​​the insulating gap 122 outside the finger-shaped conductive structure 121 is the fourth area; the ratio of the third area to the fourth area is 3.4 to 4.5. If the ratio of the third area to the fourth area is less than 3.4, the area of ​​the finger-shaped conductive structure 121 is too small, the current collection capability of the back-contact battery cell 2 is poor, and the resistance loss is large, and the area of ​​the insulating gap 122 outside the finger-shaped conductive structure 121 is too large, resulting in too much waste and too high cost; if the ratio of the third area to the fourth area is greater than 4.5, the area of ​​the finger-shaped conductive structure 121 is too large, the number of finger-shaped conductive structures 121 may be too large, the alignment of the collector grid line and the conductive backplane 1 is difficult, the manufacturing accuracy requirements for the collector grid line and the conductive layer 12 are increased, the manufacturing difficulty is increased, and the surface of the back-contact battery cell 2 is reduced. The effective area of ​​the surface is used to absorb light, thereby reducing the photoelectric conversion efficiency. At the same time, too many finger-like conductive structures 121 will also increase the turning in the waste wire removal process, forming an insulating gap 122. During the waste removal process, the probability of the waste wire being torn off increases, and the waste removal efficiency is reduced; therefore, in the present application, the ratio of the third area to the fourth area is 3.4 to 4.5, the back-contact battery cell has a strong current collection capacity and a low resistance loss, a high utilization rate of the illumination area, a high power generation efficiency of the back-contact battery cell, a low manufacturing cost, a relatively simple preparation process, a high yield, and a low risk of short circuit. At the same time, the probability of the waste wire being torn off is small, and the waste removal efficiency is high.

[0128] For example, the ratio of the third area to the fourth area may be 3.4, 3.45, 3.5, 3.6, 3.7, 3.8, 3.8, 4, 4.1, 4.2, 4.3, 4.4, or 4.5.

[0129] It should be noted that the third area may refer to the area of ​​any finger-shaped conductive structure 121 in the conductive layer.

[0130] Optionally, in the area of ​​the conductive layer 12 corresponding to a back contact cell, the total area of ​​all finger-shaped conductive structures is the fifth area, and the ratio of the first area to the fifth area is 0.02 to 0.24. If the ratio of the first area to the fifth area is less than 0.02, the first area is too small, or the size of the insulating gap is small, and the waste wire may be easily torn off during the waste removal process, the waste removal efficiency is low, and there is also a risk of insulation reliability. At the same time, if the fifth area is too large, it is difficult to align the collector grid line and the conductive backplane 1, and the manufacturing precision requirements for the collector grid line and the conductive layer 12 are increased, which increases the manufacturing difficulty and reduces the effective area of ​​the back contact cell 2 surface for absorbing light, thereby reducing the photoelectric conversion efficiency. At the same time, too many finger-shaped conductive structures 121 will also increase the turning during the waste removal process, forming the waste removal process of the insulating gap 122. The probability of the waste wire being torn off increases, and the waste removal efficiency decreases; if the ratio of the first area to the fifth area is greater than 0.24, the first area is too large, or The size of the insulating gap is large, and more waste is removed, that is, more conductive material is removed from the conductive layer 12, resulting in more material waste and higher cost. In addition, the effective area of ​​the conductive layer 12 is small, and the resistance is large. At the same time, the fifth area is too small, and the current collection ability of the back contact battery cell 2 is poor and the resistance loss is large. The area of ​​the insulating gap 122 outside the finger-shaped conductive structure 121 is too large, resulting in too much waste and too high cost. In the present application, the ratio of the first area to the fifth area is 0.02 to 0.24, the current collection ability of the back contact battery cell is strong and the resistance loss is low, the utilization rate of the illuminated area is high, the power generation efficiency of the back contact battery cell is high, the manufacturing cost is low, the preparation process is relatively simple, the yield is high, and the risk of short circuit is low. At the same time, the probability of waste wire tearing is small, and the waste removal efficiency is high.

[0131] For example, the ratio of the first area to the fifth area may be 0.02, 0.05, 0.08, 0.1, 0.13, 0.15, 0.18, 0.2, 0.22, or 0.24.

[0132] Optionally, in the second direction, the finger-shaped conductive structure 121 includes a relative head region and a tail region, and an intermediate region connecting the head region and the tail region; the area of ​​the head region is less than or equal to the area of ​​the tail region. The head region, the tail region and the intermediate region here refer to the above-mentioned related records. In the same finger-shaped conductive structure 121, the current is usually concentrated from the head region 1211 to the tail region 1212, or in other words, in the same finger-shaped conductive structure 121, the current flowing through the tail region 1212 is larger, and the area of ​​the tail region 1212 is larger, which matches the larger current it transmits, and the current transmission efficiency is high.

[0133] Optionally, the area of ​​the head region is the sixth area, and the area of ​​the insulating gap outside the head region is the seventh area; the ratio of the seventh area to the sixth area is the third ratio; the area of ​​the middle region is the eighth area, and the area of ​​the insulating gap outside the middle region is the ninth area; the ratio of the ninth area to the eighth area is the fourth ratio; the third ratio is greater than the fourth ratio. It is equivalent to that, for a finger-shaped conductive structure 121: the insulating gap allocated per unit area of ​​the head region 1211 is larger. Specifically, for a finger-shaped conductive structure 121: the head region 1211 has more turns or inflection points. During the waste wire removal process, the stress is larger or stress concentration is easily generated at these positions, and the waste wire is usually easy to tear off, while the middle region is relatively straight, and the waste wire is usually not easy to tear off. Therefore, for a finger-shaped conductive structure 121: the insulating gap allocated per unit area of ​​the head region 1211 is larger, then during the waste removal process, it is not easy to tear off at the head region 1211 position with more turns or inflection points and the tail region 1212 position, the waste removal continuity is higher, the waste removal efficiency is high, and the insulating gap allocated per unit area of ​​the middle region is smaller, the size of the retained finger-shaped conductive structure is larger, and the resistance loss can also be reduced.

[0134] Optionally, the third ratio is 0.05 to 0.5. If the third ratio is less than 0.05, the insulating gap allocated per unit area of ​​the head region 1211 is small. During the waste wire removal process, the waste wires are usually easily torn off at these positions. If the third ratio is greater than 0.5, the insulating gap allocated per unit area of ​​the head region 1211 is too much. Excessive removal of waste wire will lead to material waste and high resistance. Therefore, in the present application, the third ratio is 0.05 to 0.5. During the waste wire removal process, the waste wires are not easily torn off at these positions. The waste removal efficiency is high, and basically no material waste is caused, and the resistance is small.

[0135] For example, the third ratio may be 0.05, 0.08, 0.1, 0.15, 0.19, 0.2, 0.25, 0.3, 0.35, 0.4, 0.45, or 0.5.

[0136] Optionally, the fourth ratio is 0.036 to 0.36. If the fourth ratio is less than 0.036, the insulating gap allocated per unit area in the middle region is small. During the waste wire removal process, the waste wire is usually easily torn off at these positions. If the fourth ratio is greater than 0.36, there are too many insulating gaps allocated per unit area in the middle region. Excessive removal of waste wire will lead to material waste and high resistance. Therefore, in the present application, the fourth ratio is 0.036 to 0.36. During the waste wire removal process, the waste wire is not easy to tear off at these positions, the waste removal efficiency is high, and basically no material waste is caused, and the resistance is small.

[0137] For example, the third ratio may be 0.036, 0.04, 0.05, 0.09, 0.1, 0.15, 0.19, 0.2, 0.25, 0.3, 0.35, or 0.36.

[0138] The present application also provides a photovoltaic system, which may include: a plurality of any of the aforementioned photovoltaic modules, in which the photovoltaic modules may be distributed in an array. For example, the photovoltaic system may be arranged on a building roof, or directly exist as a building roof, etc., and the specific form of the photovoltaic system is not limited. The photovoltaic system has the same or similar beneficial effects as any of the aforementioned photovoltaic modules, and the relevant parts may be referred to each other. In order to avoid repetition, it will not be described here.

[0139] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element.

[0140] The embodiments of the present invention are described above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned specific implementation modes, which are merely illustrative rather than restrictive. Under the guidance of the present invention, ordinary technicians in this field can also make many forms without departing from the scope of protection of the present invention and the claims, all of which are within the protection of the present invention.

Claims

1. A photovoltaic module, characterized in that: include: A conductive back plate, and a back contact cell sheet disposed on the conductive back plate; The back contact cell comprises: a plurality of collector grid lines extending along a first direction; The conductive backplane comprises: a conductive layer, and an insulating layer located between the conductive layer and the back contact cell; the conductive layer comprises: a plurality of finger-shaped conductive structures extending along a second direction, and insulating gaps located between adjacent finger-shaped conductive structures; the first direction is different from the second direction; a through hole is provided in the insulating layer, and a partial area of ​​the finger-shaped conductive structure at the through hole is electrically connected to the collector grid line at a corresponding position; In the region of the conductive layer corresponding to one of the back contact cells, the number of the finger-shaped conductive structures is a first number; The ratio of the width of the insulating gap to the first number is 18 to 125; the width is in micrometers.

2. The photovoltaic module according to claim 1, characterized in that: In the region of the conductive layer corresponding to one of the back contact cells, the length of the insulating gap is a first length; A ratio of the first length to the width of the insulating gap is 1200 to 9000.

3. The photovoltaic module according to claim 1, characterized in that: The ratio of the length of the finger-shaped conductive structure to the width of the insulating gap is 60 to 450; A direction where the length of the finger-shaped conductive structure lies is parallel to the second direction.

4. The photovoltaic module according to claim 1, characterized in that: In the second direction, the finger-shaped conductive structure includes a relative head region and a tail region, and a middle region connecting the head region and the tail region; the middle region contains the center of the finger-shaped conductive structure; and the width of the head region is less than or equal to the width of the tail region.

5. The photovoltaic module according to claim 4, characterized in that: For one of the finger-shaped conductive structures: the width of the insulating gap at the head region and the width of the insulating gap at the tail region are both greater than or equal to the width of the insulating gap at the middle region.

6. The photovoltaic module according to claim 4, characterized in that: The width of the finger-shaped conductive structure at the center of the head region is the first width; the width of the finger-shaped conductive structure at the center is the second width; For one of the finger-shaped conductive structures: the ratio of the width of the insulating gap at the center of the head region to the first width is a first ratio, and the ratio of the width of the insulating gap at the center of the finger-shaped conductive structure to the second width is a second ratio; The first ratio is greater than or equal to the second ratio.

7. The photovoltaic module according to claim 6, characterized in that: The first ratio is 6 to 44; The second ratio is 8 to 55.

8. The photovoltaic module according to claim 4, characterized in that: For one of the finger-shaped conductive structures: the ratio of the width of the insulating gap at the center of the head region to the width of the insulating gap at the center of the finger-shaped conductive structure is 1 to 3.

9. The photovoltaic module according to claim 4, characterized in that: In the same finger-shaped conductive structure: the width at the center of the tail region is the third width, and the width at the center of the head region is the first width; the ratio of the third width to the first width is 2.5 to 5.

10. The photovoltaic module according to claim 4, characterized in that: The head region includes: an end point away from the tail region; The end point of the finger-shaped conductive structure and its projection on the conductive layer are located within the finger-shaped conductive structure, and the distance between the through hole adjacent to the end point and the through hole is 0.3 mm to 1 mm.

11. The photovoltaic module according to any one of claims 1 to 10, characterized in that: The insulating gap width is 500 μm to 1500 μm, and the first number ranges from 12 to 28.

12. The photovoltaic module according to claim 11, characterized in that: The width of the insulating gap is 600 μm to 1200 μm, and the first number ranges from 16 to 24.

13. The photovoltaic module according to any one of claims 1 to 10, characterized in that: The length of the back contact cell in the first direction is 160 mm to 220 mm; The width of the back contact cell is less than or equal to the length.

14. The photovoltaic module according to any one of claims 1 to 10, characterized in that: In the region of the conductive layer corresponding to one of the back contact cells, the length of the insulating gap is a first length; The ratio of the length of the back contact cell in the first direction to the first length is 0.09 to 0.12; The ratio of the width of the back contact cell to the width of the insulating gap is 65 to 485; and the direction of the width of the back contact cell is perpendicular to the first direction.

15. The photovoltaic module according to any one of claims 1 to 10, characterized in that: Also includes: The alloy layer is located between the finger-shaped conductive structure and the collector grid line electrically connected to the finger-shaped conductive structure.

16. A photovoltaic module, characterized in that: include: A conductive back plate, and a back contact cell sheet disposed on the conductive back plate; The back contact cell comprises: a plurality of collector grid lines extending along a first direction; The conductive backplane comprises: a conductive layer, and an insulating layer located between the conductive layer and the back contact cell; the conductive layer comprises: a plurality of finger-shaped conductive structures extending along a second direction, and insulating gaps located between adjacent finger-shaped conductive structures; the first direction is different from the second direction; a through hole is provided in the insulating layer, and a partial area of ​​the finger-shaped conductive structure at the through hole is electrically connected to the collector grid line at a corresponding position; In a region of the conductive layer corresponding to one of the back contact cells, the area of ​​all the insulating gaps is a first area; The area of ​​the region in the conductive layer corresponding to one of the back contact cells is the second area; The ratio of the first area to the second area is 1% to 40%.

17. The photovoltaic module according to claim 16, characterized in that: An area of ​​one of the finger-shaped conductive structures is a third area; The area of ​​the insulating gap outside the finger-shaped conductive structure is a fourth area; A ratio of the third area to the fourth area is 3.4 to 4.

5.

18. The photovoltaic module according to claim 16, characterized in that: In the region of the conductive layer corresponding to one of the back contact cells, the total area of ​​all the finger-shaped conductive structures is a fifth area; A ratio of the first area to the fifth area is 0.02 to 0.

24.

19. The photovoltaic module according to claim 16, characterized in that: In the second direction, the finger-shaped conductive structure includes a head region and a tail region opposite to each other, and a middle region connecting the head region and the tail region; the area of ​​the head region is smaller than or equal to the area of ​​the tail region.

20. The photovoltaic module according to claim 19, characterized in that: The area of ​​the head region is the sixth area; the area of ​​the insulating gap outside the head region is the seventh area; The ratio of the seventh area to the sixth area is a third ratio; The area of ​​the middle region is the eighth area; the area of ​​the insulating gap outside the middle region is the ninth area; The ratio of the ninth area to the eighth area is a fourth ratio; The third ratio is greater than the fourth ratio.

21. The photovoltaic module according to claim 20, characterized in that: The third ratio is 0.05 to 0.5; the fourth ratio is 0.036 to 0.

36.

22. The photovoltaic module according to any one of claims 16 to 21, characterized in that: The first area is 360 mm 2 Up to 2700mm 2 .

23. A photovoltaic system, characterized in that: include: The photovoltaic module according to any one of claims 1 to 22.

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