Light-emitting device for improving light-emitting brightness, display module and display device

Abstract

The invention provides a light-emitting device capable of improving light-emitting brightness, a display module and a display device, and belongs to the technical field of photoelectron manufacturing. The light-emitting device comprises a light-emitting substrate, a bonding layer, a light absorption layer, a light reflection layer and a plurality of monochromatic light-emitting structures, the bonding layer is located on the surface of the light-emitting substrate, and the monochromatic light-emitting structures are arranged on the surface, away from the light-emitting substrate, of the bonding layer at intervals; the light reflecting layer is located on the surface, away from the light emitting substrate, of the bonding layer and at least surrounds the side wall of each single-color light emitting structure; the light absorption layer is located on the surface, away from the light emitting substrate, of the bonding layer, the light absorption layer at least surrounds the light reflection layer, and the side wall of the light absorption layer is connected with the side wall of the light reflection layer. The light-emitting brightness of the light-emitting device can be improved, and the display effect of the light-emitting device is improved.

Description

Technical Field

[0001] The present disclosure relates to the field of optoelectronic manufacturing technology, and in particular to a light-emitting device, a display module and a display apparatus for improving light-emitting brightness. Background Art

[0002] The three-primary-color light-emitting device is an electronic component that uses the three-primary-color principle to make the light-emitting diode emit light of different colors. The light-emitting device has the characteristics of self-luminescence, high brightness, high contrast, high responsiveness and power saving.

[0003] In the related art, a light-emitting device generally includes a substrate and a plurality of monochromatic light-emitting structures arranged at intervals on the surface of the substrate, and the light-emitting colors of the monochromatic light-emitting structures generally include red light, green light and blue light.

[0004] Since the monochromatic light emitting structure emits light obliquely, part of the oblique light of the monochromatic light emitting structure will be absorbed by the insulating layer inside the light emitting device, thereby reducing the light output of the light emitting device and affecting the light brightness of the light emitting device. Summary of the invention

[0005] The embodiments of the present disclosure provide a light emitting device, a display module and a display device with improved light emitting brightness, which can improve the light emitting brightness of the light emitting device and enhance the display effect of the light emitting device. The technical solution is as follows:

[0006] The embodiment of the present disclosure provides a light-emitting device, which includes: a light-emitting substrate, an adhesive layer, a light-absorbing layer, a light-reflecting layer and a plurality of monochromatic light-emitting structures; the adhesive layer is located on the surface of the light-emitting substrate, and the plurality of monochromatic light-emitting structures are arranged at intervals on the surface of the adhesive layer away from the light-emitting substrate; the light-reflecting layer is located on the surface of the adhesive layer away from the light-emitting substrate, and at least surrounds the side walls of each of the monochromatic light-emitting structures; the light-absorbing layer is located on the surface of the adhesive layer away from the light-emitting substrate, the light-absorbing layer at least surrounds the light-reflecting layer, and the side walls of the light-absorbing layer are connected to the side walls of the light-reflecting layer.

[0007] In another implementation of the embodiment of the present disclosure, the reflective layer includes: a first insulating material layer and a white filler located in the first insulating material layer; or, the reflective layer includes a plurality of first material layers and a plurality of second material layers alternately stacked, and the refractive index of the first material layer is different from the refractive index of the second material layer; or, the reflective layer includes a metal layer.

[0008] In another implementation of the embodiment of the present disclosure, the light-emitting device also includes a connecting layer, which is located on the surface of the bonding layer away from the light-emitting substrate, and the connecting layer at least surrounds the side walls of each of the monochromatic light-emitting structures. The side walls of the connecting layer away from the monochromatic light-emitting structures are inclined surfaces, and the inclined surfaces are facing away from the light-emitting substrate, and the side walls of the reflective layer are connected to the inclined surfaces.

[0009] In another implementation of the embodiment of the present disclosure, the density of the white filler in the partial area of ​​the first insulating material layer close to the light output substrate is greater than the density of the white filler in the partial area of ​​the first insulating material layer far from the light output substrate.

[0010] In another implementation of the embodiment of the present disclosure, the light absorbing layer includes a second insulating material layer and a black filler located in the second insulating material layer.

[0011] In another implementation of the embodiment of the present disclosure, the density of the black filler in the second insulating material layer close to the monochromatic light-emitting structure is greater than the density of the black filler in the second insulating material layer far from the monochromatic light-emitting structure.

[0012] In another implementation of the embodiment of the present disclosure, the light-emitting device also includes a passivation layer, which is located on the surface of the light-absorbing layer away from the light-emitting substrate and the surface of the light-reflecting layer away from the light-emitting substrate; the passivation layer has a first via hole exposing each of the monochromatic light-emitting structures; the light-emitting device also includes a metal trace and a reflective layer, the reflective layer is located in the first via hole, the reflective layer has a second via hole penetrating the reflective layer, the metal trace is located on the surface of the passivation layer away from the light-emitting substrate and covers the reflective layer, and the metal trace is electrically connected to the monochromatic light-emitting structure through the second via hole.

[0013] In another implementation of the embodiment of the present disclosure, the light-emitting device also includes a metal connection layer, which is located in the first via hole and is electrically connected to the monochromatic light-emitting structure, the reflective layer covers the metal connection layer, the second via hole exposes the metal connection layer, and the metal wiring is connected to the metal connection layer through the second via hole; the reflectivity of the metal connection layer is greater than the reflectivity of the metal wiring.

[0014] An embodiment of the present disclosure provides a display module, which includes a plurality of light-emitting devices, a circuit board, and a driver integrated circuit as described above, wherein the plurality of light-emitting devices and the driver integrated circuit are both located on the circuit board.

[0015] An embodiment of the present disclosure provides a display device, which includes a plurality of display modules and a base plate as described above, wherein the plurality of display modules are located on a surface of the base plate.

[0016] The beneficial effects brought by the technical solution provided by the embodiments of the present disclosure include at least:

[0017] In the light-emitting device provided by the embodiment of the present disclosure, multiple monochromatic light-emitting structures are fixed on the light-emitting substrate through an adhesive layer, which can improve the connection reliability between the monochromatic light-emitting structure and the light-emitting substrate. At the same time, multiple monochromatic light-emitting structures are arranged at intervals on the surface of the adhesive layer, and a reflective layer is arranged around the monochromatic light-emitting structure. The reflective layer is used to reflect the light obliquely emitted by the monochromatic light-emitting structure inside the light-emitting device, preventing the light from being refracted inside the light-emitting device and being absorbed by the insulating layer, so that more light can be reflected to the light-emitting substrate of the light-emitting device, thereby increasing the light output of the light-emitting device and improving the light brightness of the light-emitting device.

[0018] At the same time, a light absorbing layer surrounding the light reflecting layer is also arranged on the outside of the light reflecting layer. In this way, even if the light emitted obliquely from the monochromatic light emitting structure penetrates the light reflecting layer and enters the light absorbing layer, it will be absorbed by the light absorbing layer, thereby avoiding the problem of light crosstalk caused by the light being emitted obliquely to the adjacent monochromatic light emitting structure, and ensuring the display effect of the light emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0020] Figure 1 is a top view of a light emitting device provided by an embodiment of the present disclosure;

[0021] Figure 2 yes Figure 1 A schematic diagram of an AA cross section is provided;

[0022] Figure 3 is a schematic structural diagram of another light-emitting device provided by an embodiment of the present disclosure;

[0023] Figure 4 yes Figure 1 A schematic diagram of a BB cross section is provided.

[0024] The descriptions of the marks in the figure are as follows:

[0025] 10. Light emitting substrate;

[0026] 20. Adhesive layer;

[0027] 30. light absorbing layer; 31. second insulating material layer; 32. black filler;

[0028] 40. passivation layer; 41. first via hole;

[0029] 50. Monochromatic light emitting structure; 51. Red light emitting structure; 52. Green light emitting structure; 53. Blue light emitting structure; 54. First electrode; 55. Second electrode;

[0030] 60. Metal routing;

[0031] 70. reflective layer; 71. second via hole;

[0032] 80. Metal connection layer;

[0033] 90. insulating layer; 95. third via hole;

[0034] 91, first pad; 92, second pad; 93, third pad; 94, fourth pad;

[0035] 100, reflective layer; 101, first insulating material layer; 102, white filler;

[0036] 110. connecting layer; 111. inclined surface. DETAILED DESCRIPTION

[0037] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0038] Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by persons with ordinary skills in the field to which the present disclosure belongs. The words "first", "second", "third" and similar words used in the patent application specification and claims of the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "one" or "one" do not indicate a quantity limitation, but indicate the existence of at least one. Words such as "include" or "comprise" and similar words mean that the elements or objects appearing before "include" or "comprise" include the elements or objects listed after "include" or "comprise" and their equivalents, and do not exclude other elements or objects. Words such as "connect" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right", "top", "bottom" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0039] Figure 1It is a top view of a light-emitting device provided by an embodiment of the present disclosure. Figure 2 yes Figure 1 A schematic diagram of an AA cross section is provided. Figure 1 , 2 As shown, the light emitting device includes: a light emitting substrate 10 , a bonding layer 20 , a light absorbing layer 30 , a light reflecting layer 100 and a plurality of monochromatic light emitting structures 50 .

[0040] like Figure 2 As shown, the bonding layer 20 is located on the surface of the light emitting substrate 10 , and a plurality of monochromatic light emitting structures 50 are arranged at intervals on the surface of the bonding layer 20 away from the light emitting substrate 10 .

[0041] like Figure 2 As shown, the reflective layer 100 is located on the surface of the adhesive layer 20 away from the light emitting substrate 10 , and at least surrounds the side walls of each monochromatic light emitting structure 50 .

[0042] like Figure 2 As shown, the light absorbing layer 30 is located on the surface of the bonding layer 20 away from the light output substrate 10 , the light absorbing layer 30 at least surrounds the light reflecting layer 100 , and the side wall of the light absorbing layer 30 is connected to the side wall of the light reflecting layer 100 .

[0043] In the light-emitting device provided by the embodiment of the present disclosure, multiple monochromatic light-emitting structures are fixed on the light-emitting substrate through an adhesive layer, which can improve the connection reliability between the monochromatic light-emitting structure and the light-emitting substrate. At the same time, multiple monochromatic light-emitting structures are arranged at intervals on the surface of the adhesive layer, and a reflective layer 100 is arranged around the monochromatic light-emitting structure. The reflective layer 100 is used to reflect the light obliquely emitted by the monochromatic light-emitting structure inside the light-emitting device, preventing the light from being refracted inside the light-emitting device and being absorbed by the insulating layer, so that more light can be reflected to the light-emitting substrate of the light-emitting device, thereby increasing the light output of the light-emitting device and improving the light brightness of the light-emitting device.

[0044] At the same time, a light absorbing layer surrounding the light reflecting layer 100 is also arranged outside the light reflecting layer 100. In this way, even if the light emitted obliquely from the monochromatic light emitting structure penetrates the light reflecting layer 100 and enters the light absorbing layer, it will be absorbed by the light absorbing layer, thereby avoiding the problem of light crosstalk caused by the light being emitted obliquely to the adjacent monochromatic light emitting structure, thereby ensuring the display effect of the light emitting device.

[0045] In one implementation, the light reflecting layer 100 includes: a first insulating material layer 101 and a white filler 102 located in the first insulating material layer 101 .

[0046] Exemplarily, the first insulating material layer 101 may be at least one of a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer.

[0047] Exemplarily, the thickness of the first insulating material layer 101 is greater than or equal to the thickness of the monochromatic light-emitting structure, thus ensuring that the reflective layer 100 can completely surround the side wall of the monochromatic light-emitting structure.

[0048] Exemplarily, the white filler 102 may include at least one of white pigment powder, antimony white, zinc white, and aluminum oxide powder.

[0049] In this way, the white filler 102 is filled in the first insulating material layer 101, so that the light reflecting layer 100 is white, which can not only reflect light well, but also reduce the light absorption of the light reflecting layer 100.

[0050] In another implementation, the light reflecting layer 100 includes a plurality of first material layers and a plurality of second material layers that are alternately stacked, and the refractive index of the first material layer is different from the refractive index of the second material layer.

[0051] Exemplarily, the first material layer is a silicon oxide layer, and the second material layer is a titanium oxide layer. A distributed Bragg reflector (DBR) layer can be formed by periodically alternating multiple silicon oxide layers and titanium oxide layers. The number of periods of the DBR layer can be between 20 and 50. For example, the number of periods of the DBR layer is 32.

[0052] As an example, the thickness of the silicon oxide layer in the DBR layer may be 80 angstroms to 120 angstroms, and the thickness of the titanium oxide layer may be 50 angstroms to 90 angstroms.

[0053] In another implementation, the reflective layer 100 includes a metal layer. The good reflective properties of metal can improve the reflective effect of the reflective layer 100; at the same time, the use of a metal layer to make the reflective layer 100 does not require the preparation of multiple different film layers, thus effectively improving the preparation efficiency of the reflective layer 100.

[0054] Exemplarily, the light reflecting layer 100 includes at least one of an Au layer, an Ag layer, and an Al layer.

[0055] Alternatively, if Figure 2 As shown, the light-emitting device also includes a connecting layer 110, which is located on the surface of the bonding layer away from the light-emitting substrate. The connecting layer 110 at least surrounds the side walls of each monochromatic light-emitting structure. The side wall of the connecting layer 110 away from the monochromatic light-emitting structure is an inclined surface 111, and the inclined surface 111 faces away from the light-emitting substrate. The side wall of the reflective layer 100 is connected to the inclined surface 111.

[0056] Exemplarily, the connection layer 110 may be at least one of a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer.

[0057] like Figure 2As shown, the angle between the inclined surface 111 of the connection layer 110 and the surface of the adhesive layer away from the light output substrate is an acute angle.

[0058] See also Figure 2 As shown by the middle arrow in the optical path, when the light emitted obliquely from the light emitting device is directed toward the inclined surface 111, the reflective layer 100 connected to the inclined surface 111 will reflect the light. Since the reflective layer 100 is located on the inclined surface 111 and the reflective layer 100 is directed toward the light emitting substrate, the light emitted will be reflected by the reflective layer 100 and then directed toward the light emitting substrate, thereby increasing the light output of the light emitting device.

[0059] Optionally, the density of the white filler 102 in a partial region of the first insulating material layer 101 close to the light output substrate is greater than the density of the white filler 102 in a partial region of the first insulating material layer 101 far from the light output substrate.

[0060] like Figure 2 As shown, since the first insulating layer is overlapped on the inclined surface 111, the width of the partial area of ​​the first insulating layer close to the light output substrate is smaller than the width of the partial area of ​​the first insulating layer far from the light output substrate. Therefore, the partial area of ​​the first insulating layer close to the light output substrate is thinner and easily penetrated by light, and a white filler 102 with a higher density is arranged in the partial area of ​​the first insulating layer close to the light output substrate to enhance the reflective effect of the area, thereby preventing light from easily penetrating the reflective layer 100.

[0061] Optionally, the reflectivity of the light absorbing layer 30 is less than or equal to 20%. Using a light absorbing layer 30 with a reflectivity less than the above range can ensure that most of the light incident on the light absorbing layer 30 is absorbed by the light absorbing layer 30, thereby reducing the light crosstalk problem caused by light reflection.

[0062] Optionally, the light absorbing layer 30 includes a second insulating material layer 31 and a black filler 32 located in the second insulating material layer 31 .

[0063] Exemplarily, the second insulating material layer 31 may be at least one of a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer.

[0064] Exemplarily, the thickness of the second insulating material layer 31 is greater than or equal to the thickness of the monochromatic light emitting structure 50 , so as to ensure that the light absorbing layer 30 can completely surround the side wall of the monochromatic light emitting structure 50 .

[0065] For example, the black filler 32 may be carbon particles, carbon nanotube particles, metal particles or black pigment.

[0066] In this way, the black filler 32 is filled in the second insulating material layer 31, so that the light absorbing layer 30 is black, which can not only absorb light well, but also make the background of the monochrome light-emitting structure 50 black, so as to improve the contrast and enhance the display effect of the light-emitting device.

[0067] Optionally, the density of the black filler 32 in the second insulating material layer 31 close to the monochromatic light emitting structure 50 is greater than the density of the black filler 32 in the second insulating material layer 31 far from the monochromatic light emitting structure 50 .

[0068] In this way, the density of the black filler 32 in the portion of the film layer on the second insulating material layer 31 closest to the monochromatic light-emitting structure 50 is higher, so that the light absorption effect of the portion of the film layer closest to the monochromatic light-emitting structure 50 is better, and the oblique light emission of the monochromatic light-emitting structure 50 can be avoided to the greatest extent. The density of the black filler 32 in the portion of the film layer on the second insulating material layer 31 far from the monochromatic light-emitting structure 50 is lower, which can reduce the amount of black filler 32 used, thereby saving preparation costs.

[0069] Exemplarily, when the black filler 32 is carbon particles, the particle size of the carbon particles in the portion of the second insulating material layer 31 close to the monochromatic light-emitting structure 50 is smaller than the particle size of the carbon particles in the portion of the second insulating material layer 31 far from the monochromatic light-emitting structure 50 .

[0070] In this way, the size of the carbon particles in the part of the film layer of the second insulating material layer 31 close to the monochromatic light-emitting structure 50 is smaller, which makes the gaps between the carbon particles smaller, and can prevent light from escaping from the gaps between the carbon particles, further improving the light absorption effect of the light absorption layer 30.

[0071] Alternatively, if Figure 2 As shown, the light emitting device further includes a passivation layer 40 , which is located on a surface of the light absorbing layer 30 away from the light emitting substrate 10 and a surface of the light reflecting layer 100 away from the light emitting substrate 10 .

[0072] Figure 3 Schematic diagram of another light emitting device provided by the embodiment of the present disclosure. Figure 3 As shown, the passivation layer 40 has a first via hole 41 exposing each single-color light emitting structure 50 .

[0073] like Figure 3 As shown, the light-emitting device also includes a metal trace 60 and a reflective layer 70. The reflective layer 70 is located in the first via hole 41. The reflective layer 70 has a second via hole 71 that passes through the reflective layer 70. The metal trace 60 is located on the surface of the passivation layer 40 away from the light-emitting substrate 10, and the metal trace 60 covers the reflective layer 70. The metal trace 60 is electrically connected to the monochromatic light-emitting structure 50 through the second via hole 71.

[0074] In the above implementation, a reflective layer 70 is provided on the side of the monochromatic light emitting structure 50 away from the light emitting substrate 10 , which can improve the reflectivity and allow more light to be emitted from the light emitting substrate 10 , thereby improving the brightness of the monochromatic light emitting structure 50 .

[0075] At the same time, the first via hole 41 is filled with a reflective layer 70 to avoid the presence of a large number of concave holes on the surface of the passivation layer 40, making the surface of the passivation layer 40 flatter, so that the metal wiring 60 formed on the passivation layer 40 will not have many bends or ups and downs, which will cause the risk of the metal wiring 60 breaking, thereby improving the reliability of the light-emitting device.

[0076] The reflective layer 70 is an insulating layer 90 , and thus a first via hole 41 is provided on the reflective layer 70 , so that the metal trace 60 can be electrically connected to the monochromatic light emitting structure 50 through the first via hole 41 .

[0077] Exemplarily, the reflective layer 70 may be a distributed Bragg reflector (DBR) layer, wherein the DBR layer includes a plurality of periodically alternately stacked SiO2 layers and TiO2 layers, and the number of periods of the DBR layer may be between 20 and 50. For example, the number of periods of the DBR layer is 32.

[0078] The thickness of the SiO2 layer in the DBR layer may be 800 angstroms to 1200 angstroms, and the thickness of the TiO2 layer may be 500 angstroms to 900 angstroms.

[0079] Alternatively, if Figure 2 As shown, the light-emitting device also includes a metal connection layer 11080, which is located in the first via hole 41, and the metal connection layer 11080 is electrically connected to the monochromatic light-emitting structure 50, the reflective layer 70 covers the metal connection layer 11080, the second via hole 71 exposes the metal connection layer 11080, and the metal wiring 60 is connected to the metal connection layer 11080 through the second via hole 71.

[0080] In the disclosed embodiment, the reflectivity of the metal connection layer 11080 is greater than the reflectivity of the metal trace 60 .

[0081] In the above implementation, a metal connection layer 11080 is disposed in the first via hole 41 , so that the metal trace 60 can be connected to the metal connection layer 11080 after passing through the second via hole 71 , and electrically connected to the monochromatic light emitting structure 50 through the metal connection layer 11080 .

[0082] Since the metal material of the metal wiring 60 is mostly Au, Ag and other materials with low reflectivity, when the area of ​​the metal wiring 60 in contact with the monochromatic light-emitting structure 50 is too large, it is easy to absorb part of the light and reduce the brightness of the light. By setting a metal connection layer 11080 with a high reflectivity between the metal wiring 60 and the monochromatic light-emitting structure 50, the metal connection layer 11080 replaces the metal wiring 60 in contact with the monochromatic light-emitting structure 50, thereby preventing the metal wiring 60 from absorbing more light, thereby improving the brightness of the monochromatic light-emitting structure 50.

[0083] Exemplarily, the metal connection layer 11080 is made of metals such as Al, Mg and Ca.

[0084] Alternatively, if Figure 3 As shown, the area of ​​the orthographic projection of the metal connection layer 11080 on the light output substrate 10 is larger than the area of ​​the orthographic projection of the second via hole 71 on the light output substrate 10 .

[0085] Compared with the metal wiring 60 directly contacting the monochromatic light-emitting structure 50 through the second via 71, the metal connection layer 11080 is set to cover the entire surface in the first via 41, so as to ensure that the contact area between the metal connection layer 11080 and the monochromatic light-emitting structure 50 is large enough, thereby ensuring that the current can be evenly transmitted to the monochromatic light-emitting structure 50; at the same time, it can also prevent the problem of excessive current in local areas of the monochromatic light-emitting structure 50 when the metal wiring 60 directly contacts the monochromatic light-emitting structure 50 through the second via 71.

[0086] Alternatively, if Figure 1 , 2 As shown, multiple monochromatic light-emitting structures 50 include a red light-emitting structure 51, a green light-emitting structure 52 and a blue light-emitting structure 53. The red light-emitting structure 51, the green light-emitting structure 52 and the blue light-emitting structure 53 all include a first electrode 54 and a second electrode 55 of different conductivity types. The metal wiring 60 is connected to the first electrode 54 or the second electrode 55 through a second via 71.

[0087] In the present disclosure, Figure 1 As shown, the metal routing 60 may include at least four metal routings, the first metal routing 60 is connected to the first electrode 54 of the red light emitting structure 51, the second metal routing 60 is connected to the first electrode 54 of the green light emitting structure 52, the third metal routing 60 is connected to the first electrode 54 of the blue light emitting structure 53, and the fourth metal routing 60 is connected to the second electrodes 55 of the red light emitting structure 51, the green light emitting structure 52 and the blue light emitting structure 53 at the same time.

[0088] In the embodiment of the present disclosure, the monochromatic light emitting structure 50 may include an epitaxial layer, a first electrode 54 and a second electrode 55, wherein the epitaxial layer includes a p-type layer, a light emitting layer and an n-type layer stacked in sequence, and the n-type layer has a groove exposing the p-type layer.

[0089] For example, the first electrode 54 may be a p-type electrode, and the second electrode 55 may be an n-type electrode. The first electrode 54 is located in the groove and connected to the p-type layer, and the second electrode 55 is located on the surface of the n-type layer.

[0090] Optionally, the red epitaxial layer of the red light emitting structure 51 includes a first p-type layer, a first light emitting layer and a first n-type layer stacked in sequence.

[0091] In the red epitaxial layer, the first p-type layer includes a p-type AlInP layer.

[0092] The first light-emitting layer includes an AlGaInP quantum well layer and an AlGaInP quantum barrier layer grown alternately, wherein the Al content in the AlGaInP quantum well layer and the AlGaInP quantum barrier layer is different. The first light-emitting layer may include 3 to 8 periods of AlGaInP quantum well layers and AlGaInP quantum barrier layers stacked alternately.

[0093] The first n-type layer includes an n-type AlGaInP current spreading layer.

[0094] Optionally, the green epitaxial layer of the green light emitting structure 52 includes a second p-type layer, a second light emitting layer and a second n-type layer stacked in sequence.

[0095] In the green epitaxial layer, the second p-type layer includes a p-type GaN layer.

[0096] The second light-emitting layer includes alternately grown InGaN quantum well layers and GaN quantum barrier layers. The second light-emitting layer may include 3 to 8 periods of alternately stacked InGaN quantum well layers and GaN quantum barrier layers.

[0097] The second n-type layer includes an n-type GaN layer.

[0098] Optionally, the blue epitaxial layer of the blue light emitting structure 53 includes a third p-type layer, a third light emitting layer and a third n-type layer stacked in sequence.

[0099] In the blue epitaxial layer, the third p-type layer includes a p-type GaN layer.

[0100] The third light emitting layer may include alternately grown InGaN quantum well layers and GaN quantum barrier layers. The third light emitting layer may include 3 to 8 periods of alternately stacked InGaN quantum well layers and GaN quantum barrier layers.

[0101] The third n-type layer includes an n-type GaN layer.

[0102] Optionally, the thickness of the single-color light emitting structure 50 is 2 μm to 10 μm.

[0103] Exemplarily, the thickness of the red epitaxial layer is 5 μm, the thickness of the green epitaxial layer is 8 μm, and the thickness of the blue epitaxial layer is 6 μm.

[0104] Optionally, the light output substrate 10 may be a sapphire substrate or a glass substrate.

[0105] Exemplarily, the thickness of the light output substrate 10 is greater than or equal to 10 μm, the light output substrate 10 may be a complete plate without division, and the area of ​​the light output substrate 10 is greater than the area of ​​the orthographic projection of the plurality of monochromatic light emitting structures 50 on the light output substrate 10 .

[0106] like Figure 1 , 2 As shown, the light emitting device further includes: an insulating layer 90 , a first solder pad 91 , a second solder pad 92 , a third solder pad 93 and a fourth solder pad 94 , the insulating layer 90 is located on the surface of the passivation layer 40 away from the light emitting substrate 10 , and the insulating layer 90 has a third via 95 exposing the metal trace 60 .

[0107] By providing the insulating layer 90 to wrap the metal wiring 60 , the problem of short circuit caused by the metal wiring 60 being exposed outside can be avoided, and the metal wiring 60 can be protected.

[0108] Optionally, the insulating layer 90 may cover the sidewalls of the adhesive layer 20 , the sidewalls of the light absorbing layer 30 , and the sidewalls of the passivation layer 40 to play a protective role.

[0109] Exemplarily, the insulating layer 90 includes at least one of a silicon oxide layer, a titanium oxide layer, an aluminum oxide layer, and a distributed Bragg reflector layer.

[0110] Exemplarily, the insulating layer 90 may be a DBR layer, which includes a plurality of SiO2 layers and TiO2 layers that are periodically and alternately stacked. The number of periods of the DBR layer may be between 20 and 50. For example, the number of periods of the DBR layer is 32.

[0111] The thickness of the SiO2 layer in the DBR layer may be 800 angstroms to 1200 angstroms, and the thickness of the TiO2 layer may be 500 angstroms to 900 angstroms.

[0112] like Figure 1As shown, the first pad 91, the second pad 92, the third pad 93 and the fourth pad 94 are all located on the surface of the insulating layer 90 away from the light output substrate 10, the first pad 91 is connected to the metal wiring 60 through the third via 95, and the first pad 91 is connected to the first electrode 54 of the red light emitting structure 51 through the metal wiring 60.

[0113] like Figure 1 As shown, the second pad 92 is connected to the metal wiring 60 through the third via 95 , and the second pad 92 is connected to the first electrode 54 of the green light emitting structure 52 through the metal wiring 60 .

[0114] Figure 4 yes Figure 1 A schematic diagram of a BB cross section is provided. Figure 4 As shown, the third pad 93 is connected to the metal wiring 60 through the third via 95 , and the third pad 93 is connected to the first electrode 54 of the blue light emitting structure 53 through the metal wiring 60 .

[0115] like Figure 4 As shown, the fourth pad 94 is connected to the metal wiring 60 through the third via hole 95 , and is connected to the second electrode 55 of each monochromatic light emitting structure 50 through the metal wiring 60 .

[0116] The metal trace 60 connected to the fourth pad 94 is in a long strip shape, and the metal trace 60 is electrically connected to the second electrodes 55 of the red light emitting structure 51 , the green light emitting structure 52 and the blue light emitting structure 53 at the same time.

[0117] In the above implementation, the second electrode 55 of each monochromatic light-emitting structure 50 is electrically connected to the same metal wiring 60, so that the same type of semiconductor layers of multiple monochromatic light-emitting structures 50 are connected together so that they can be powered on simultaneously by the fourth pad 94, and the other type of semiconductor layer of each monochromatic light-emitting structure 50 is connected to different metal wirings 60 respectively to be powered on separately, thereby achieving the purpose of individually controlling the light emission of each monochromatic light-emitting structure 50.

[0118] In the disclosed embodiment, the fourth pad 94 is used as a common pad so as to be electrically connected to the same type of semiconductor layer of each monochromatic light emitting structure 50 at the same time. The first pad 91, the second pad 92 and the third pad 93 are electrically connected to another type of semiconductor layer of each monochromatic light emitting structure 50 respectively so as to be energized separately, thereby achieving the purpose of separately controlling the light emission of each monochromatic light emitting structure 50.

[0119] Alternatively, the first electrode 54 and the second electrode 55 may each include a Cr layer, an Al layer, a Ti layer, and a Pt layer stacked in sequence.

[0120] The thickness of the Cr layer by evaporation is 1500 angstroms to 2500 angstroms, the thickness of the Al layer by evaporation is 1000 angstroms to 2500 angstroms, the thickness of the Ti layer by evaporation is 300 angstroms to 700 angstroms, and the thickness of the Pt layer by evaporation is 1500 angstroms to 2500 angstroms.

[0121] Optionally, the first pad 91 , the second pad 92 , the third pad 93 and the fourth pad 94 each include a first Ti layer, an Al layer, a second Ti layer, a Pt layer, a Ni layer and an Au layer stacked in sequence.

[0122] Exemplarily, the thickness of the first Ti layer is 20 angstroms to 100 angstroms. For example, the thickness of the first Ti layer is 50 angstroms.

[0123] Exemplarily, the thickness of the Al layer is 10000 angstroms to 20000 angstroms. For example, the thickness of the Al layer is 15000 angstroms.

[0124] Exemplarily, the thickness of the second Ti layer is 500 angstroms to 1500 angstroms. For example, the thickness of the second Ti layer is 1000 angstroms.

[0125] Exemplarily, the thickness of the Pt layer is 500 angstroms to 1500 angstroms. For example, the thickness of the Pt layer is 1000 angstroms.

[0126] Exemplarily, the thickness of the Ni layer is 60,000 angstroms to 80,000 angstroms. For example, the thickness of the Ni layer is 70,000 angstroms.

[0127] Exemplarily, the thickness of the Au layer is 1500 angstroms to 2500 angstroms. For example, the thickness of the Au layer is 2000 angstroms.

[0128] Optionally, the passivation layer 40 includes at least one of a silicon oxide layer, a titanium oxide layer, an aluminum oxide layer, and a distributed Bragg reflector layer.

[0129] Exemplarily, the passivation layer 40 may be a DBR layer, which includes a plurality of SiO2 layers and TiO2 layers that are periodically and alternately stacked, and the number of periods of the DBR layer may be between 20 and 50. For example, the number of periods of the DBR layer is 32.

[0130] The thickness of the SiO2 layer in the DBR layer may be 800 angstroms to 1200 angstroms, and the thickness of the TiO2 layer may be 500 angstroms to 900 angstroms.

[0131] Alternatively, the bonding layer 20 may be a transparent organic material layer. Exemplarily, the bonding layer 20 may include a polymethyl methacrylate layer, a polycarbonate layer, a polystyrene layer, a polypropylene layer, and a polyethylene layer.

[0132] An embodiment of the present disclosure provides a display module, which includes a plurality of light-emitting devices, a driver integrated circuit (IC) and a circuit board as described above, wherein the plurality of light-emitting devices and the driver IC are both located on the circuit board.

[0133] Exemplarily, a plurality of light emitting device arrays are arranged on a circuit board.

[0134] Exemplarily, the circuit board may include at least one of a glass board, a ceramic board, and an organic board.

[0135] The two surfaces of the circuit board have electrical circuits and wires required for electrical connection, and one of the surfaces of the circuit board is used to place the light-emitting device.

[0136] Optionally, the display module further includes a packaging adhesive, which covers a plurality of light-emitting devices, a driver IC and a circuit board. The driver IC is located on the circuit board and is electrically connected via a drive line on the circuit board, and the pads of the plurality of light-emitting devices are also electrically connected to the drive line on the circuit board. In this way, the driver IC can control each light-emitting device via the drive line.

[0137] An embodiment of the present disclosure provides a display device, which includes a plurality of display modules and a base plate as described above, wherein the plurality of display modules are located on a surface of the base plate.

[0138] The bottom plate is a supporting plate for supporting the display module, and can be a ceramic plate, an alumina plate, or an aluminum alloy plate.

[0139] The display device can be any product or component with a display function, such as a laptop computer, a tablet computer, a mobile phone, a personal digital assistant (PDA), a navigator, a wearable device, an augmented reality (AR) device, a virtual reality (VR) device, etc.

[0140] The display device may be an electroluminescent display device or a photoluminescent display device. In the case where the display device is an electroluminescent display device, the electroluminescent display device may be an organic electroluminescent diode display device, a quantum dot electroluminescent diode display device or an active matrix organic light emitting diode display device.

[0141] The above does not limit the present disclosure in any form. Although the present disclosure has been disclosed as above through the embodiments, it is not used to limit the present disclosure. Any technician familiar with the profession can make some changes or modifications to equivalent embodiments of equivalent changes using the technical contents disclosed above without departing from the scope of the technical solution of the present disclosure. However, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the present disclosure without departing from the content of the technical solution of the present disclosure still falls within the scope of the technical solution of the present disclosure.

Claims

1. A light emitting device, characterized in that: The light-emitting device comprises: a light-emitting substrate (10), a bonding layer (20), a light-absorbing layer (30), a light-reflecting layer (100), and a plurality of monochromatic light-emitting structures (50); The bonding layer (20) is located on the surface of the light emitting substrate (10), and the plurality of monochromatic light emitting structures (50) are arranged at intervals on the surface of the bonding layer (20) away from the light emitting substrate (10); The reflective layer (100) is located on a surface of the bonding layer (20) away from the light emitting substrate (10), and at least surrounds the side walls of each of the monochromatic light emitting structures; The light absorbing layer (30) is located on a surface of the bonding layer (20) away from the light emitting substrate (10), the light absorbing layer (30) at least surrounds the light reflecting layer (100), and the side wall of the light absorbing layer (30) is connected to the side wall of the light reflecting layer (100).

2. The light emitting device according to claim 1, characterized in that: The light reflecting layer (100) comprises: a first insulating material layer (101) and a white filler (102) located in the first insulating material layer (101); or, The light reflecting layer (100) comprises a plurality of first material layers and a plurality of second material layers which are alternately stacked, and the refractive index of the first material layer is different from the refractive index of the second material layer; or The light reflecting layer (100) comprises a metal layer.

3. The light emitting device according to claim 2, characterized in that: The light-emitting device further comprises a connecting layer (110), wherein the connecting layer (110) is located on a surface of the bonding layer (20) away from the light-emitting substrate (10), the connecting layer (110) at least surrounds the side walls of each of the monochromatic light-emitting structures (50), the side walls of the connecting layer (110) away from the monochromatic light-emitting structures (50) are inclined surfaces (111), the inclined surfaces (111) are facing away from the light-emitting substrate (10), and the side walls of the reflective layer (100) are connected to the inclined surfaces (111).

4. The light emitting device according to claim 3, characterized in that: The density of the white filler (102) in a partial area of ​​the first insulating material layer (101) close to the light output substrate (10) is greater than the density of the white filler (102) in a partial area of ​​the first insulating material layer (101) far from the light output substrate (10).

5. The light emitting device according to any one of claims 1 to 4, characterized in that: The light absorbing layer (30) comprises a second insulating material layer (31) and a black filler (32) located in the second insulating material layer (31).

6. The light emitting device according to claim 5, characterized in that: The density of the black filler (32) in the second insulating material layer (31) close to the monochromatic light-emitting structure (50) is greater than the density of the black filler (32) in the second insulating material layer (31) far from the monochromatic light-emitting structure (50).

7. The light emitting device according to any one of claims 1 to 4, characterized in that: The light emitting device further comprises a passivation layer (40), wherein the passivation layer (40) is located on a surface of the light absorbing layer (30) away from the light emitting substrate (10) and on a surface of the light reflecting layer (100) away from the light emitting substrate (10); The passivation layer (40) has a first via hole (41) exposing each of the monochromatic light-emitting structures (50); The light-emitting device further comprises a metal wiring (60) and a reflective layer (70); the reflective layer (70) is located in the first via hole (41); the reflective layer (70) has a second via hole (71) penetrating the reflective layer (70); the metal wiring (60) is located on a surface of the passivation layer (40) away from the light-emitting substrate (10) and covers the reflective layer (70); and the metal wiring (60) is electrically connected to the monochromatic light-emitting structure (50) through the second via hole (71).

8. The light emitting device according to claim 7, characterized in that: The light-emitting device further comprises a metal connection layer (80), the metal connection layer (80) is located in the first via hole (41) and is electrically connected to the monochromatic light-emitting structure (50), the reflective layer (70) covers the metal connection layer (80), the second via hole (71) exposes the metal connection layer (80), and the metal trace (60) is connected to the metal connection layer (80) through the second via hole (71); The reflectivity of the metal connection layer (80) is greater than the reflectivity of the metal wiring (60).

9. A display module, characterized in that: The display module comprises a plurality of light-emitting devices, a circuit board and a driver integrated circuit as claimed in any one of claims 1 to 8, wherein the plurality of light-emitting devices and the driver integrated circuit are both located on the circuit board.

10. A display device, characterized in that: The display device comprises a plurality of display modules as claimed in claim 9 and a base plate, wherein the plurality of display modules are located on a surface of the base plate.

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