An LED device and a manufacturing method thereof

Abstract

This application relates to the technical field of LED manufacturing, and particularly relates to an LED device and a manufacturing method thereof. The manufacturing method includes: attaching a mutually conductive first conductive layer and a second conductive layer on two surfaces of a second substrate, attaching a first substrate with an LED chip thereon to the first conductive layer of the second substrate, and electrically connecting the LED chip to the first conductive layer; etching the first conductive layer to form a plurality of conductive bumps, each of the conductive bumps being electrically connected to the LED chip and the second conductive layer; encapsulating the first substrate and the second substrate, and performing circuit forming processing on one side of the second conductive layer of the second substrate. The manufacturing method of this application has no requirement for the transfer accuracy of the LED chip, and has low requirements for the accuracy of the transfer equipment and the circuit etching equipment, solving the problems of high requirements for the mass transfer accuracy, low yield, and high cost caused by the miniaturization of the LED.

Description

Technical Field

[0001] The present invention relates to the technical field of LED preparation, and particularly relates to an LED device and a manufacturing method thereof. Background Art

[0002] Light-emitting diode (LED) light sources have the advantages of high brightness, high contrast, high color gamut, long lifespan, strong anti-collision ability, high reliability, etc. With the rapid development of LED technology, the performance of LEDs such as brightness and lifespan has been greatly improved, making the application fields of LEDs more and more extensive. LEDs are widely used in high-definition display fields such as high-end rental, vehicle-mounted displays, cinema live broadcasts, and virtual shooting. However, limited by the manufacturing process, LED devices have problems of high cost and low yield.

[0003] Currently, a major problem restricting the cost, yield, and miniaturization of LED devices is the method of massive transfer of LED chips. The massive transfer technology is to transfer LED chips to a specific driving substrate. Through this technology, multiple small LED chips can be correctly and efficiently transferred to a large carrier, thereby manufacturing a display screen with higher resolution and higher brightness.

[0004] In related technologies, the massive transfer methods include: electrostatic adsorption transfer, fluid assembly transfer, elastic imprint transfer, laser selective release transfer, etc. These methods either have low efficiency or low transfer accuracy. Low efficiency will lead to insufficient production, while low transfer accuracy will result in a decrease in yield. Therefore, traditional production methods are difficult to balance both yield and production, and there are certain difficulties in practical applications. Therefore, how to achieve low-cost and high-efficiency massive transfer of LED devices has become an urgent problem for practitioners to solve. Summary of the Invention

[0005] In view of the related technologies, the manufacturing method of LED devices is limited by transfer accuracy and it is difficult to balance the requirements of yield and production in the manufacturing of LED devices.

[0006] In a first aspect, an embodiment of the present application provides a manufacturing method of an LED device, which includes:

[0007] A first conductive layer and a second conductive layer that are mutually conductive are attached to two surfaces of a second substrate, and a first substrate with an LED chip attached is attached to the first conductive layer of the second substrate, and the LED chip is electrically connected to the first conductive layer;

[0008] The first conductive layer is etched to form a plurality of conductive bumps, and each of the conductive bumps is in conduction with the LED chip and the second conductive layer;

[0009] Encapsulate the first substrate and the second substrate, and perform circuit forming processing on one side of the second conductive layer of the second substrate.

[0010] Combined with the first aspect, in one embodiment, the attaching of a first conductive layer and a second conductive layer that are electrically connected to each other on two surfaces of the second substrate includes: forming at least one through hole in the second substrate, and filling conductive materials on both surfaces and inside the through hole of the second substrate, so as to form the first conductive layer and the second conductive layer on both surfaces of the second substrate, and at the same time form a third conductive part that is electrically connected to the first conductive layer and the second conductive layer inside the through hole of the second substrate.

[0011] Combined with the first aspect, in one embodiment, the filling of conductive materials on both surfaces and inside the through hole of the original substrate includes: electroplating conductive metal on both surfaces of the second substrate.

[0012] Combined with the first aspect, in one embodiment, the electroplating of conductive metal on both surfaces of the second substrate includes:

[0013] Electroplating conductive metal on the surface of the second substrate to form the first conductive layer, and making the height of the first conductive layer in the thickness direction of the second substrate less than the height of the pins of the LED chip in the thickness direction of the first substrate.

[0014] Combined with the first aspect, in one embodiment, both the first substrate and the second substrate are made of glass substrates.

[0015] Combined with the first aspect, in one embodiment, the encapsulation of the first substrate and the second substrate includes: filling an encapsulation colloid between the first substrate and the second substrate, and a heat conductive material is mixed in the encapsulation colloid.

[0016] Combined with the first aspect, in one embodiment, the heat conductive material includes boron nitride powder.

[0017] Combined with the first aspect, in one embodiment, the attaching of the first substrate with the LED chip attached thereto to the second substrate includes:

[0018] Attaching the first conductive layer of the first substrate to the second substrate, and connecting the pins of the LED chip to the first conductive layer by means of soldering.

[0019] Combined with the first aspect, in one embodiment, the circuit forming processing of the second conductive layer of the second substrate includes: processing the second conductive layer into conductive pins by means of an exposure process

[0020] In a second aspect, an embodiment of the present application provides an LED device, which includes: an LED device manufactured by using the manufacturing method of any one of the above-described LED devices.

[0021] The beneficial effects brought by the technical solutions provided by the embodiments of the present application at least include:

[0022] In the present application, a first conductive layer and a second conductive layer that are electrically connected to each other are provided on the large surfaces on both sides of the substrate. The large-area conductive layer is used to electrically connect to the LED chip, and then the redundant conductive layer is etched away. Since the pins of the LED chip can be directly electrically connected to the conductive layer, there is no requirement for the transfer accuracy of the LED chip, and the accuracy requirements for the transfer device and the line etching device are low, solving the problems of high requirements for the mass transfer accuracy, low yield, and high cost brought by the miniaturization of the LED. Description of the Drawings

[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0024] Figure 1 It is a cross-sectional view of the LED device in the front view perspective in the embodiment of the present application;

[0025] Figure 2 It is a bottom view of the LED device in the embodiment of the present application;

[0026] Figure 3 It is a cross-sectional view of the first substrate in the front view perspective in the embodiment of the present application;

[0027] Figure 4 It is a cross-sectional view of the LED device in the front view perspective at step S3 in the embodiment of the present application;

[0028] Figure 5 It is a cross-sectional view of the LED device in the front view perspective at step S4 in the embodiment of the present application

[0029] Figure 6 It is a partial cross-sectional view of the LED device at step S4 in the embodiment of the present application;

[0030] Figure 7 It is a cross-sectional view of the LED device in the front view perspective at step S5 in the embodiment of the present application;

[0031] Figure 8 It is a cross-sectional view of the LED device in the front view perspective at step S6a in the embodiment of the present application;

[0032] Figure 9It is a cross-sectional view of the LED device in the front view angle under step S6b in the embodiment of the present application;

[0033] Figure 10 It is a cross-sectional view of the LED device in the front view angle under step S6c in the embodiment of the present application.

[0034] In the figure: 1. LED chip; 11. Pin; 12. Solder paste; 2. First substrate; 3. Second substrate; 31. Through hole; 4. First conductive layer; 41. Conductive bump; 5. Second conductive layer; 51. Conductive pin; 6. Third conductive part; 7. Encapsulation colloid; 8. Photosensitive dry film; 9. Insulating ink. Specific embodiments

[0035] In order to enable those skilled in the art to better understand the solution of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0036] In related technologies, the manufacturing method of LED devices is limited by transfer accuracy, and it is difficult to balance the requirements of the yield and production of LED device manufacturing.

[0037] In the first aspect, the present application provides a manufacturing method for an LED device, which includes the following steps:

[0038] Step S1: Transfer the LED chip 1 to the first substrate 2 through a mass transfer technology.

[0039] Preferably, the first substrate 2 can be selected as a glass substrate.

[0040] It should be noted that using a glass substrate as the base can greatly improve the flatness of the LED device, which is beneficial to improving the mass transfer accuracy and the manufacturing of micro-LED devices.

[0041] Specifically, a transparent glue can be coated on the surface of the first substrate 2 to tightly bond the transferred LED chip 1 to the first substrate 2. Further, as Figure 3 shown, solder paste 12 is attached to the pins 11 of the LED chip 1 to form an LED chip 1 with tin electrodes.

[0042] It can be understood that the solder paste 12 is used to connect the LED chip 1 to the conductive layer through a soldering process in subsequent steps.

[0043] Step S2: Attach a mutually conductive first conductive layer 4 and a second conductive layer 5 on two surfaces of the second substrate 3.

[0044] It should be noted that the first conductive layer 4 and the second conductive layer 5 located on the upper and lower surfaces of the second substrate 3 are electrically connected to each other. The first conductive layer 4 is used for electrically connecting with the LED chip 1. Since the area of the first conductive layer 4 is relatively large, it is less difficult for the pin 11 of the LED chip 1 to be electrically connected to the first conductive layer 4. Therefore, the requirement for the transfer accuracy of the LED chip 1 is relatively small.

[0045] The above step S2 specifically includes:

[0046] Step S2a: At least one through hole 31 is formed in the second substrate 3.

[0047] Preferably, the second substrate 3 can be a glass substrate.

[0048] It should be noted that using a glass substrate as the base can greatly improve the flatness of the LED device, which is beneficial to improving the mass transfer accuracy and the fabrication of micro-LED devices.

[0049] Step S2b: Conductive materials are filled on both side surfaces and inside the through hole 31 of the second substrate 3, so as to form the first conductive layer 4 and the second conductive layer 5 on both side surfaces of the second substrate 3, and at the same time, form a third conductive part 6 that is electrically connected to the first conductive layer 4 and the second conductive layer 5 inside the through hole 31 of the second substrate 3.

[0050] It can be understood that in the above embodiment, the first conductive layer 4 and the second conductive layer 5 are electrically connected through the conductive material in the through hole 31. Further, by increasing the number of through holes 31 in the second substrate 3 and arranging the through holes 31 densely on the second substrate 3, the conductive paths between the first conductive layer 4 and the second conductive layer 5 are increased, so as to reduce the accuracy requirement for etching the second conductive layer 5 in the subsequent steps.

[0051] In a preferred embodiment of the above step S2b, as Figure 4 shown, by electroplating conductive metal on both side surfaces of the second substrate 3, the first conductive layer 4 and the second conductive layer 5 are formed on both side surfaces of the second substrate 3, and at the same time, the third conductive part 6 is formed inside the through hole 31 of the second substrate 3.

[0052] It can be understood that after drilling through holes 31 in the second substrate 3, a metal layer is electroplated on the upper and lower surfaces of the second substrate 3 to form the first conductive layer 4 and the second conductive layer 5. During this process, the through holes 31 in the second substrate 3 are also filled with metal to form the third conductive part 6. Further, the third conductive part 6, the first conductive layer 4, and the second conductive layer 5 are all made of conductive metal materials. On the one hand, they can provide the function of electrical connection for the LED device. On the other hand, since the thermal conductivity of general metals can reach more than 400 W / m·K, the heat dissipation performance of the metal material can be used to improve the all-round heat dissipation ability of the LED device.

[0053] In some preferred embodiments during the process of electroplating the metal layer on the surface of the second substrate 3, it includes: electroplating a conductive metal on the surface of the second substrate 3 to form the first conductive layer 4, and making the height of the first conductive layer 4 in the thickness direction of the second substrate 3 less than the height of the pin 11 of the LED chip 1 in the thickness direction of the first substrate 2.

[0054] It can be understood that as Figure 6 shown, the higher the height H1 of the pin 11 is, the larger the gap between the bottom of the LED chip 1 and the first conductive layer 4 is. Furthermore, it is beneficial for the etching solution to flow into the bottom of the LED chip 1 to etch away the excess metal on the first conductive layer 4 during the subsequent etching process.

[0055] Step S3: Attach the first substrate 2 with the LED chip 1 attached thereto to the first conductive layer 4 of the second substrate 3, and electrically connect the LED chip 1 to the first conductive layer 4.

[0056] Specifically, after the LED chip 1 is attached to the first conductive layer 4, as Figure 4 shown, by heating and melting the solder paste, the solder paste on the pin 11 of the LED chip 1 is melted, and then the LED chip 1 is tightly connected to the first conductive layer 4.

[0057] It is worth noting that the solder paste welding process is mature and has a low cost. Further, the connection process between the LED chip 1 and the first conductive layer 4 in step S3 of the present application is not limited to the above specific embodiments, and other feasible connection methods (such as laser welding) can be used according to needs.

[0058] Step S4: Etch the first conductive layer 4 to form a plurality of conductive bumps 41, and each of the conductive bumps 41 is electrically connected to the LED chip 1 and the second conductive layer 5.

[0059] Specifically, the first conductive layer 4 is placed in the etching solution. During the etching process, only the part of the first conductive layer 4 connected to the solder paste 12 is retained, and the rest of the first conductive layer 4 is completely etched away. As Figure 5 shown, the remaining part of the first conductive layer 4 is the conductive bump 41 connected to the solder paste 12.

[0060] It should be noted that all the excess metal materials of the first conductive layer 4 need to be etched away. If the etching is not thorough, it will cause a short circuit between the positive and negative electrodes, which will in turn affect the lighting of the RGB chip. Further, as described above, since there are a plurality of tiny through holes 31 provided in the second substrate 3 and the through holes 31 are densely arranged, the conduction paths between the first conductive layer 4 and the second conductive layer 5 are increased, so as to ensure that even the conductive bumps 41 formed after the first conductive layer 4 is etched can still be conducted with the second conductive layer 5 through the third conductive part 6 in some of the through holes 31.

[0061] Step S5: Package the first substrate 2 and the second substrate 3.

[0062] Specifically, as Figure 7 shown, a packaging colloid 7 is filled between the first substrate 2 and the second substrate 3 to complete the packaging, and a transparent colloid or a black colloid can be used according to actual needs.

[0063] It can be understood that the packaging process is to protect the LED chip 1 from the influence of the external environment (such as humidity, dust, and chemical substances, etc.).

[0064] In some preferred embodiments, a heat-conducting material is incorporated into the packaging colloid 7. The heat-conducting material may include boron nitride (BN) powder.

[0065] It should be noted that in the traditional technology, LED packaging devices are all encapsulated by insulating colloids and various resins, and the heat-conducting coefficients of the insulating colloids and resins are extremely low, generally lower than 1 W / m·K. As a result, the heat dissipation ability of the LED device is extremely poor, and excessive heat will affect the luminous color temperature and brightness of the LED chip 1, causing light decay and affecting the final display effect. In the above preferred embodiments of the present application, the heat-conducting coefficient of the boron nitride powder can reach 200 - 400 W / m·K, which helps the all-round heat dissipation ability of the LED device.

[0066] Step S6: Perform circuit forming processing on the side of the second conductive layer 5 of the second substrate 3.

[0067] In a specific embodiment, the second conductive layer 5 is processed into conductive pins 51 by an exposure process, and the specific processing method includes:

[0068] Step S6a: As Figure 8 shown, a photosensitive dry film 8 is pre-coated on the surface of the second conductive layer 5, and the circuit pattern is accurately projected onto the copper-clad layer of the circuit board by using LDI (Laser Direct Imaging) technology.

[0069] It can be understood that after the photosensitive dry film 8 is irradiated by strong ultraviolet light, some areas are preliminarily cured. This process determines the final circuit shape.

[0070] Step S6b: After the photosensitive dry film 8 is cured, develop to remove the conductive metal in the area of the second conductive layer 5 that is not covered by the photosensitive dry film 8, and obtain the conductive pins 51 as shown in Figure 9 .

[0071] Step S6c: As shown in Figure 10 , spray a layer of insulating ink 9 on the surface of the remaining photosensitive dry film 8 and the second substrate 3.

[0072] Preferably, the thickness of the sprayed insulating ink 9 should be less than the thickness of the conductive pins 51 to facilitate the subsequent removal of the remaining photosensitive dry film 8.

[0073] Step S6d: Use an alkaline reagent to clean and remove the photosensitive dry film 8, and an LED device as shown in Figure 2 can be obtained.

[0074] It should be noted that the circuit exposure technology can achieve high-precision circuit design, with an accuracy of up to 0.01 mm, suitable for miniaturized and high-density circuit design. And the exposure time is short, suitable for large-scale production, which can significantly improve production efficiency. Compared with traditional manufacturing methods, the circuit exposure technology has lower costs and has economic benefits.

[0075] In a second aspect, the present application provides an LED device manufactured by any one of the above manufacturing methods.

[0076] In some specific embodiments, as shown in Figure 1 , the LED device includes: a first substrate 2 and a second substrate 3; wherein,

[0077] On the first substrate 2, an LED chip 1 is attached; on the second substrate 3, which is attached to the first substrate 2, a plurality of conductive bumps 41 are provided on one side surface, and conductive pins 51 are provided on the other side surface. The conductive bumps 41 are electrically connected to the LED chip 1, and the conductive pins 51 are in conduction with the conductive bumps 41.

[0078] Furthermore, at least one through hole 31 is formed on the second substrate 3, and a third conductive part 6 that is in conduction with the conductive bumps 41 and the conductive pins 51 is filled in the through hole 31. Preferably, a plurality of densely arranged through holes 31 are formed on the second substrate 3.

[0079] It should be noted that in the above embodiments, the first conductive layer 4 and the second conductive layer 5 are electrically connected through the conductive material in the through hole 31. Further, by increasing the number of through holes 31 in the second substrate 3 and arranging the through holes 31 densely on the second substrate 3, the number of conduction paths between the first conductive layer 4 and the second conductive layer 5 is increased, so as to reduce the etching precision requirement for the second conductive layer 5 in the manufacturing process and improve the production efficiency of the LED device.

[0080] In some preferred embodiments, the conductive bumps 41, the conductive pins 51 and the third conductive portion 6 are all made of conductive metal.

[0081] It should be noted that the third conductive portion 6, the first conductive layer 4 and the second conductive layer 5 are all made of conductive metal materials. On the one hand, it can provide the function of electrical connection for the LED device. On the other hand, since the thermal conductivity of general metals can reach more than 400 W / m·K, the heat dissipation capacity of the LED device in all directions can be improved by using the heat conduction performance of the metal material.

[0082] Further, an encapsulation colloid 7 is filled between the first substrate 2 and the second substrate 3, and a heat conductive material is mixed in the encapsulation colloid 7. The heat conductive material may include boron nitride (BN) powder.

[0083] It should be noted that in the traditional technology, LED packaging devices are all encapsulated by insulating colloids and various resins, and the thermal conductivity of insulating colloids and resins is extremely low, generally lower than 1 W / m·K. This leads to extremely poor heat dissipation capacity of the LED device, and excessive heat will affect the luminous color temperature and brightness of the LED chip 1, causing light decay and affecting the final display effect. In the above preferred embodiments of the present application, the thermal conductivity of boron nitride powder can reach 200 - 400 W / m·K, which is helpful for the all-round heat dissipation capacity of the LED device.

[0084] In summary, the manufacturing method of the LED device of the present application sets a first conductive layer and a second conductive layer that are electrically connected to each other on the large surfaces on both sides of the substrate, electrically connects the large-area conductive layer with the LED chip, and then etches away the redundant conductive layer. Since the pins of the LED chip can be directly electrically connected to the conductive layer, there is no requirement for the transfer precision of the LED chip, and the transfer process has low precision requirements for the transfer equipment and the line etching equipment, solving the problems of high requirements for the mass transfer precision, low yield and high cost caused by the miniaturization of the LED. Further, the present application sets a plurality of densely arranged through holes in the substrate, and the surfaces of the through holes are plated with conductive metal. The upper and lower surfaces are electrically connected by using the through holes, so that the etching precision requirement for the device pins during the manufacturing of the LED device is not high, and it is also beneficial to manufacture the conductive pins at low cost and high efficiency. Finally, the all-round heat dissipation capacity of the LED device can be improved by the insulating colloid doped with high thermal conductivity powder and the metal in the through holes of the substrate.

[0085] In the description of the present application, it should be noted that the orientation or positional relationship indicated by terms such as "upper" and "lower" is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to the present application. Unless otherwise clearly specified and defined, the terms "installed", "connected", and "coupled" shall be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0086] It should be noted that in the present application, relative terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprising", "including" or any other variant thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or further includes elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "comprising one..." does not exclude the existence of additional identical elements in the process, method, article or device including the said element.

[0087] The above are only specific embodiments of the present application, enabling those skilled in the art to understand or implement the present application. Various modifications to these embodiments will be obvious to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to these embodiments shown herein, but rather to the broadest scope consistent with the principles and novel features claimed herein.

Claims

1. A manufacturing method of an LED device, characterized in that, Comprising: A first conductive layer (4) and a second conductive layer (5) which are electrically connected to each other are attached to two surfaces of a second substrate (3). A first substrate (2) with an LED chip (1) attached thereto is bonded to the first conductive layer (4) of the second substrate (3), and the LED chip (1) is electrically connected to the first conductive layer (4). The first conductive layer (4) is etched to form a plurality of conductive bumps (41), and each of the conductive bumps (41) is electrically connected to the LED chip (1) and the second conductive layer (5). The first substrate (2) and the second substrate (3) are encapsulated, and circuit forming processing is performed on one side of the second conductive layer (5) of the second substrate (3). The attaching of the first conductive layer (4) and the second conductive layer (5) which are electrically connected to each other to two surfaces of the second substrate (3) includes: at least one through hole (31) is formed in the second substrate (3), and conductive materials are filled on both side surfaces of the second substrate (3) and in the through hole (31), so as to form the first conductive layer (4) and the second conductive layer (5) on both side surfaces of the second substrate (3), and at the same time, a third conductive part (6) which is electrically connected to the first conductive layer (4) and the second conductive layer (5) is formed in the through hole (31) of the second substrate (3). The filling of the conductive materials on both side surfaces of the second substrate (3) and in the through hole (31) includes: electroplating conductive metal on both side surfaces of the second substrate (3). The electroplating of the conductive metal on both side surfaces of the second substrate (3) includes: electroplating conductive metal on the surface of the second substrate (3) to form the first conductive layer (4), and the height of the first conductive layer (4) in the thickness direction of the second substrate (3) is less than the height of the lead (11) of the LED chip (1) in the thickness direction of the first substrate (2).

2. The manufacturing method of the LED device according to claim 1, characterized in that: Both the first substrate (2) and the second substrate (3) are made of glass substrates.

3. The manufacturing method of the LED device according to claim 1, wherein, The encapsulating of the first substrate (2) and the second substrate (3) includes: an encapsulating colloid (7) is filled between the first substrate (2) and the second substrate (3), and a heat conductive material is mixed in the encapsulating colloid (7).

4. The manufacturing method of the LED device according to claim 3, characterized in that: The heat conductive material includes boron nitride powder.

5. The manufacturing method of the LED device according to claim 1, characterized in that, The bonding of the first substrate (2) with the LED chip (1) attached thereto to the second substrate (3) includes: The first substrate (2) is bonded to the first conductive layer (4) of the second substrate (3), and the lead (11) of the LED chip (1) is connected to the first conductive layer (4) by soldering.

6. The manufacturing method of the LED device according to claim 1, wherein The circuit forming processing of the second conductive layer (5) of the second substrate (3) includes: the second conductive layer (5) is processed into conductive leads (51) by an exposure process.

7. An LED device, characterized in that, Comprising: An LED device manufactured by using the manufacturing method of the LED device according to any one of claims 1-6.

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