Photoelectric device, preparation method thereof and display device

Abstract

The invention discloses a photoelectric device, a preparation method thereof and a display device, the photoelectric device comprises an electronic function layer, and the electronic function layer comprises an electronic function material layer and a glycerin passivation layer. The preparation method of the photoelectric device comprises the following steps: providing a substrate comprising a first electrode, and preparing an electronic function material layer on the first electrode; a solution containing glycerin is arranged on the electronic function material layer through a solution method, and passivation treatment is conducted on the surface of the electronic function material layer to form a glycerin passivation layer; and preparing a second electrode on the glycerol passivation layer to obtain the photoelectric device. The display device comprises the photoelectric device or the photoelectric device prepared by the method. According to the scheme, the solution containing glycerol is used for carrying out surface treatment on the electronic function material layer, and the interface between the electronic function layer and the electrode can be optimized, so that the electric balance of the photoelectric device is improved, the recombination efficiency of current carriers is improved, the performance of the photoelectric device is improved, and the performance of the display device is further improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to an optoelectronic device, a method for preparing an optoelectronic device, and a display device comprising the optoelectronic device or comprising the optoelectronic device prepared according to the method. Background Art

[0002] Quantum dots are nanocrystals with a radius smaller than or close to the Bohr radius of the exciton. Their particle size is usually between 1 and 20 nm. They have unique optical characteristics such as adjustable size luminescence spectrum, narrow emission spectrum, and high luminescence efficiency. Quantum dots used in the display field are generally core-shell structures. QLED display devices (Quantum dot light-emitting diodes) are electroluminescent devices that use quantum dots as light sources. The movement of holes and electrons in their interior in all directions is restricted, and the surface is generally passivated by ligands. Since the wavelength of quantum dots can be adjusted by controlling the particle size, the luminescence spectrum has a narrow line width, high color purity, good light stability, and can be used for flexible displays, they are widely used in the field of luminescent displays. They have shown excellent device performance in the latest research results. QLED also shows good competitive advantages in color saturation, stability and cost compared with traditional LEDs and OLEDs.

[0003] Currently, the electron transport layer of QLED devices is a type of electronic functional layer, which generally uses oxide materials. The modification of oxide materials includes optimization during material synthesis and optimization during device preparation. The optimization during synthesis mainly focuses on the physical and chemical properties of the oxide material itself, while the optimization during the preparation of QLED devices mainly focuses on the interaction between the electronic functional layer prepared by oxide and other functional layers. The existing electronic functional layers prepared by oxide have many surface defects, resulting in low carrier recombination efficiency.

[0004] Therefore, the prior art still needs to be improved and developed. Summary of the invention

[0005] In view of this, the present application provides an optoelectronic device, a method for preparing the same, and a display device, aiming to improve the problem that the existing electronic functional layer has many surface defects, resulting in low carrier recombination efficiency.

[0006] The embodiment of the present application is implemented as follows: the embodiment of the present application provides a photoelectric device, wherein the photoelectric device includes an electronic functional layer, and the electronic functional layer includes an electronic functional material layer and a glycerol passivation layer.

[0007] Accordingly, the present invention also provides a method for preparing the above-mentioned optoelectronic device, comprising the following steps:

[0008] Providing a substrate including a first electrode, and preparing an electronic functional material layer on the first electrode;

[0009] A solution containing glycerol is disposed on the electronic functional material layer by a solution method, and a surface of the electronic functional material layer is passivated to form a glycerol passivation layer;

[0010] A second electrode is prepared on the glycerol passivation layer to obtain the photoelectric device.

[0011] Correspondingly, an embodiment of the present application further provides a display device, which contains the above-mentioned optoelectronic device or contains an optoelectronic device prepared according to the above-mentioned preparation method.

[0012] The optoelectronic device described in the present application and the optoelectronic device manufactured by the method for preparing the optoelectronic device described in the present application, the electronic functional layer of which includes an electronic functional material layer and a glycerol passivation layer. The presence of the glycerol passivation layer can optimize the interface between the electronic functional layer and the electrode, improve the surface defects of the electronic functional layer, thereby improving the electrical balance of the optoelectronic device, and enhancing the recombination efficiency of carriers, so that the performance of the optoelectronic device is improved. Correspondingly, the performance of the display device using the aforementioned optoelectronic device can also be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0014] Figure 1 is a schematic structural diagram of an optoelectronic device provided in an embodiment of the present application;

[0015] Figure 2 is another structural schematic diagram of an optoelectronic device provided in an embodiment of the present application;

[0016] Figure 3 is a flow chart of a method for preparing a photoelectric device provided in an embodiment of the present application;

[0017] Figure 4 is a flow chart of a method for preparing a light-emitting device provided in an embodiment of the present application;

[0018] Figure 5 This is an embodiment of the present application Figure 4 A flow chart of a method for preparing a substrate structure with a light-emitting layer is provided. DETAILED DESCRIPTION

[0019] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0020] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of this application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0021] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0022] In the present application, "at least one" means one or more, and "plurality" means two or more. "At least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0023] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0024] The technical solution of this application is as follows:

[0025] An embodiment of the present application provides a photoelectric device, which includes an electronic functional layer, which may be an electron transport layer and / or an electron injection layer, and which includes an electronic functional material layer and a glycerol passivation layer, wherein the electronic functional layer can be formed by pre-forming the electronic functional material layer and then passivating the surface of the electronic functional material layer with a solution containing glycerol to form the glycerol passivation layer.

[0026] Specifically, the optoelectronic device may be a light emitting device or other devices involving photoelectric conversion. For example, a light emitting device may be Figure 1 As shown, it relates to a light-emitting device, which includes at least two electrodes (anode 10, cathode 20) and a light-emitting layer 30 and an electronic functional layer 40, wherein the electronic functional layer 40 includes a glycerol passivation layer 41 and an electronic functional material layer 42 of electronic functional materials.

[0027] In this embodiment, if Figure 1 As shown, the electronic functional layer 40 is arranged between the light-emitting layer 30 and the cathode 20, and the layer connected to the electrode 20 after the electronic functional layer 40 is formed is a glycerol passivation layer 41 formed after the surface of the electronic functional material layer 41 is passivated with a solution containing glycerol. The passivation treatment process is to arrange the solution containing glycerol on the surface of the electronic functional material layer 41 by spin coating or inkjet printing, wherein glycerol can be adsorbed on the surface of the electronic functional material layer 41 to passivate surface defects and form a glycerol passivation layer 41, thereby improving the electrical balance of the optoelectronic device and enhancing the recombination efficiency of carriers.

[0028] In some embodiments, the electronic functional material of the electronic functional material layer 42 includes metal oxides, doped metal oxides, II-VI semiconductor materials, III-V semiconductor materials and I-III-VI semiconductor materials, and the glycerol is adsorbed on the material on the surface of the electronic functional material layer 42, thereby passivating the surface defects of the electronic functional material layer 42 to form a glycerol passivation layer 41, that is, the glycerol passivation layer 41 includes mutually adsorbed glycerol and the material of the electronic functional material layer 42. Among them, the metal oxide is selected from one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, lithium zinc oxide, and indium tin oxide, and the doped elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium; the III-V semiconductor material is selected from one or more of InP and GaP; the I-III-VI semiconductor material is selected from one or more of CuInS and CuGaS. The subsequent embodiments of the present application will be described in detail by taking the electronic functional layer 40 prepared by non-doped zinc oxide as an example.

[0029] In some embodiments, the light-emitting layer 30 may be an organic light-emitting layer or a quantum dot light-emitting layer. The present application preferably uses a quantum dot light-emitting layer (red, green, and blue quantum dot light-emitting layers). The quantum dot light-emitting material of the quantum dot light-emitting layer includes at least one of a single structure quantum dot, a core-shell structure quantum dot, and a perovskite semiconductor material. The material of the single structure quantum dot, the core material of the core-shell structure quantum dot, and the shell material of the core-shell structure quantum dot are selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe , ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound is selected from SnS, SnSe, SnTe, P At least one of SnPbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, I At least one of nPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlNP, InAlNAs, InAlNSb, InAlPAs or InAlPSb, the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2 and AgInS2; the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2 and AgInS2;The perovskite semiconductor material is selected from doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs; + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - ,I - At least one of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2) n- 2NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2 + , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is selected from Cl - Br - ,I - At least one of .

[0030] The material of the organic light-emitting layer includes at least one of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine-C2,N)iridium(III), 4,4',4"-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine-C2,N)iridium], diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF materials, polymers containing covalent bonds of BN, HLCT materials, Exciplex luminescent materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives.

[0031] In a further embodiment, the solution further contains alcohol organic solvents and water solvents. The alcohol organic solvents and water solvents as solvents for glycerol can fully disperse the glycerol, and finally adsorb it in molecular form on the surface of the electronic functional material layer 42. The finally formed glycerol passivation layer 41 also contains water, and the water is adsorbed on the material of the electronic functional material layer 42 (such as undoped zinc oxide) in the glycerol passivation layer 40 through the glycerol. Among them, the volume ratio of the water solvent and the alcohol organic solvent is (1:10000) to (1:10), the concentration of glycerol in the solution is 0.1 mg / mL to 20 mg / mL, and the water solvent is adsorbed on the material on the surface of the electronic functional material layer 42 (such as undoped zinc oxide) through the glycerol. While passivating surface defects, glycerol can increase the adsorption effect of the material of the electronic functional material layer 42 on water, and the adsorbed water can further improve the interface between the electronic functional layer 40 and the electrode 20; in this embodiment, the electronic functional material layer 42 adsorbed with the glycerol and the water solvent can be heat-treated after passivation treatment, the heat treatment temperature is 50°C-80°C, and the heat treatment time is 5min-20min. The heat treatment can further increase the effect of the mixed solution formed by the alcohol organic solvent, the water solvent and the glycerol on the surface treatment of the electronic functional material layer 42, thereby improving the performance of the photoelectric device.

[0032] In some optional embodiments, the volume ratio of the aqueous solvent to the alcohol organic solvent is (1:10000), (1:9000), (1:8000), (1:7000), (1:6000), (1:5000), (1:4000), (1:3000), (1:2000), (1:1000), (1:900), (1:800), (1:700), (1:600), (1:500), (1:400), (1:300), (1:200), (1:100), (1:90), (1:80), (1:70), (1:60), (1:50), (1:40), (1:30), (1:20), (1:10), etc., or a range between any two of them.

[0033] In some optional embodiments, the concentration of glycerol in the solution is 0.1 mg / mL, 0.2 mg / mL, 0.3 mg / mL, 0.4 mg / mL, 0.5 mg / mL, 0.6 mg / mL, 0.7 mg / mL, 0.8 mg / mL, 0.9 mg / mL, 1 mg / mL, 1.5 mg / mL, 2 mg / mL, 2.5 mg / mL, 3 mg / mL, 3.5 mg / mL, 4 mg / mL, 4.5 mg / mL, 5 mg / mL, 5 .5mg / mL, 6mg / mL, 6.5mg / mL, 7mg / mL, 7.5mg / mL, 8mg / mL, 8.5mg / mL, 9mg / mL, 9.5mg / mL, 10mg / mL, 11mg / mL, 12mg / mL, 13mg / mL, 14mg / mL, 15mg / mL, 16mg / mL, 17mg / mL, 18mg / mL, 19mg / mL, 20mg / mL, etc., any one or the range between any two.

[0034] In some optional embodiments, the heat treatment temperature after the passivation treatment is 50°C, 51°C, 52°C, 53°C, 54°C, 55°C, 56°C, 57°C, 58°C, 59°C, 60°C, 61°C, 62°C, 63°C, 64°C, 66°C, 66°C, 67°C, 68°C, 69°C, 70°C, 71°C, 72°C, 73°C, 74°C, 77°C, 76°C, 77°C, 78°C, 79°C, 80°C, etc., or in the range between any two of the above.

[0035] In some optional embodiments, the heat treatment time after the passivation treatment is any one of 5min, 6min, 7min, 8min, 9min, 10min, 11min, 12min, 13min, 14min, 15min, 16min, 17min, 18min, 19min, 20min, etc., or in a range between any two of them.

[0036] In a further embodiment, Figure 2 As shown, the optoelectronic device may also include a hole transport layer 50 and a hole injection layer 60, and the materials of the hole transport layer 50 and / or the hole injection layer 60 include at least one of TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tri(N-3-methylphenyl-Nphenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal tinides, doped graphene, undoped graphene and C60.

[0037] In a further embodiment, the anode 10 and the cathode 20 are each independently selected from a doped metal oxide particle electrode, a composite electrode of metal and metal oxide, a graphite electrode, a graphene electrode, a carbon nanotube electrode, a carbon fiber electrode, a metal electrode or an alloy electrode, the material of the doped metal oxide particle electrode is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide, the composite electrode of metal and metal oxide is selected from AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, and the material of the metal electrode is selected from one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg and Ba.

[0038] In this embodiment, the material of the cathode 20 is preferably metal, which is conducive to the formation of metal oxide at the interface between the electronic functional layer 40 and the cathode 20, thereby improving the injection of electrons from the cathode 20 to the electronic functional layer 40 and improving the carrier recombination efficiency.

[0039] See also Figure 3 The present application also provides a method for preparing a photoelectric device, comprising the following steps:

[0040] Step S31: providing a substrate including a first electrode, and preparing an electronic functional material layer on the first electrode;

[0041] Step S32: using a solution method to place a solution containing glycerol on the electronic functional material layer, and passivating the surface of the electronic functional material layer to form a glycerol passivation layer;

[0042] Step S33: preparing a second electrode on the glycerol passivation layer to obtain the photoelectric device.

[0043] In some embodiments, in the above steps, one of the first electrode and the second electrode is an anode and the other is a cathode. Unless otherwise specified, the following embodiments are illustrative in that the first electrode is an anode and the second electrode is a cathode.

[0044] The method for preparing the optoelectronic device described in the present application comprises coating a solution containing glycerol on the electronic functional material layer, performing surface treatment on the electronic functional material layer using the solution containing glycerol, and improving the surface defects of the electronic functional material layer. The interface between the electronic functional layer and the electrode obtained thereby is optimized, thereby improving the electrical balance of the optoelectronic device and enhancing the recombination efficiency of carriers. The optoelectronic device prepared thereby can have good performance.

[0045] In a further embodiment, in step S31:

[0046] The electronic functional material of the electronic functional material layer includes metal oxides, doped metal oxides, II-VI semiconductor materials, III-V semiconductor materials and I-III-VI semiconductor materials, the metal oxide is selected from one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, aluminum zinc oxide, manganese zinc oxide, zinc tin oxide, lithium zinc oxide, indium tin oxide, the doped elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium; the III-V semiconductor material is selected from one or more of InP and GaP; the I-III-VI semiconductor material is selected from one or more of CuInS and CuGaS. The subsequent embodiments of this application will be described in detail by taking the preparation of the electron transport layer by undoped zinc oxide as an example.

[0047] In a further embodiment, in step S32:

[0048] Specifically, a solution containing glycerol is disposed on the surface of the electronic functional material layer by spin coating or inkjet printing, so that glycerol is adsorbed on the surface of the electronic functional material layer, surface defects are passivated, and a glycerol passivation layer is formed, thereby improving the electrical balance of the optoelectronic device and increasing the recombination efficiency of carriers. The thickness of the solution containing glycerol by spin coating or inkjet printing is within 3 nm, and the glycerol, which is liquid at room temperature, is dispersed in the solution and finally adsorbed on the surface of the electronic functional material layer in the form of molecules.

[0049] In some embodiments, the solution containing glycerol contains multiple solvents, and the multiple solvents include at least alcohol organic solvents and water solvents. The alcohol organic solvent can be ethanol, propanol, etc. In this embodiment, the ratio of glycerol, alcohol organic solvent and water solvent has a greater influence on the passivation effect. In order to ensure a better passivation defect effect and increase the treatment effect of the interface between the electronic functional layer and the electrode, the volume ratio of the water solvent and the alcohol organic solvent is (1:10000) to (1:10); the concentration of glycerol in the solution is 0.1mg / mL to 20mg / mL. The specific values ​​of the volume ratio of the water solvent and the alcohol organic solvent and the concentration of glycerol in the solution can refer to the above embodiment. In this embodiment, glycerol can increase the water absorption of electronic functional materials (such as zinc oxide) while passivating defects. This is beneficial to the oxidation of cathode materials during the subsequent heating treatment after preparing the second electrode (for example, for a cathode prepared with Ag, zinc oxide absorbs water and promotes the formation of silver oxide from Ag during the heating treatment), which is beneficial to increasing the injection of electrons into the electronic functional layer, helping to increase the current of the photoelectric device, thereby improving the performance of the photoelectric device.

[0050] In some embodiments, after forming the glycerol passivation layer and before preparing the second electrode, the substrate after forming the glycerol passivation layer is subjected to heat treatment, the heat treatment temperature is 50°C to 80°C, and the treatment time is 5min to 20min. The heat treatment can further increase the effect of the mixed solution formed by the alcohol organic solvent, the water solvent and the glycerol on the surface treatment of the electronic functional material layer, thereby improving the performance of the optoelectronic device. In some embodiments, the temperature and treatment time of the heat treatment can be specifically referred to the above embodiments.

[0051] In a further embodiment, in step S33:

[0052] The electrode is a cathode, which is specifically formed by evaporation. In this embodiment, the material of the cathode can refer to the material of the cathode 20 in the embodiment of the above-mentioned photoelectric device.

[0053] In some embodiments, after preparing the second electrode, the method further includes performing a secondary heat treatment on the photoelectric device after the second electrode is formed; the temperature of the secondary heat treatment is 110°C to 140°C, and the treatment time is 5min to 60min. By performing a heat treatment again after preparing the second electrode, the effect of the mixed solution formed by the alcohol organic solvent, the water solvent and the glycerol on the surface treatment of the electronic functional material layer can be further increased, and the oxidation of the cathode surface material can be promoted. For example, for a cathode prepared with Ag, zinc oxide absorbs water and promotes Ag to generate silver oxide during the heating process, which is beneficial to improve the injection of electrons into the electronic functional layer, and helps to increase the current of the photoelectric device and improve the performance of the photoelectric device.

[0054] In some optional embodiments, the temperature of the secondary heat treatment is 110°C, 111°C, 112°C, 113°C, 114°C, 115°C, 116°C, 117°C, 118°C, 119°C, 120°C, 121°C, 122°C, 123°C, 124°C, 125°C, 126°C, 127°C, 128°C, 129°C, 130°C, 131°C, 132°C, 133°C, 134°C, 135°C, 136°C, 137°C, 138°C, 139°C, 140°C, etc., or the range between any two of them.

[0055] In some optional embodiments, the treatment time of the secondary heat treatment is any one of 5 min, 6 min, 7 min, 8 min, 9 min, 10 min, 20 min, 25 min, 30 min, 35 min, 40 min, 45 min, 50 min, 55 min, 60 min, etc., or a range between any two of them.

[0056] The above steps are described in detail below by taking the optoelectronic device as a light-emitting device and the electronic functional layer as an electron transport layer as an example. In the light-emitting device, a light-emitting layer is also prepared on the substrate provided in step S31. Accordingly, Figure 4 As shown, the preparation process of the light emitting device is as follows:

[0057] Step S41: providing a substrate structure with a light-emitting layer, and preparing an electron transport material layer on the light-emitting layer;

[0058] Step S42: using a solution method to place a solution containing glycerol on the electron transport material layer, and passivating the surface of the electron transport material layer to form a glycerol passivation layer;

[0059] Step S43: preparing an electrode on the glycerol passivation layer to obtain the light-emitting device.

[0060] The method for preparing the light-emitting device described in the present application can optimize the interface between the electron transport layer and the electrode, improve the surface defects of the electron transport layer, thereby improving the electrical balance of the light-emitting device and enhancing the recombination efficiency of carriers, by coating a solution containing glycerol on the electron transport layer and using the solution containing glycerol to treat the surface of the electron transport layer. The light-emitting device prepared in this way can have good performance.

[0061] When manufacturing the light-emitting device in steps S41-43, the parameters used in each step can refer to the parameters used in the manufacturing steps of the aforementioned optoelectronic device, which will not be expanded here.

[0062] In some embodiments, the preparation process of the light-emitting device further includes a step of preparing a substrate structure having a light-emitting layer, such as Figure 5 As shown, specifically including:

[0063] Step S51: providing an insulating substrate, and preparing an anode on the insulating substrate; in this step, a glass substrate (insulating substrate) with ITO (including an anode) can be provided, and pre-treated, and the pre-treatment includes at least one cleaning and drying step, such as placing the glass substrate with ITO in detergent, deionized water, acetone, ethanol, and deionized water in turn, and drying after each ultrasonic cleaning. The material of the anode can refer to the material of the anode 10 in the above-mentioned embodiment of the optoelectronic device.

[0064] Step S52: spin coating a hole injection material on the anode layer to prepare a hole injection layer; the hole injection material can refer to the material of the hole injection layer 60 in the above-mentioned embodiment of the optoelectronic device.

[0065] Step S53: spin coating a hole injection material on the hole injection layer to prepare a hole transport layer; the hole transport material can refer to the material of the hole transport layer 50 in the above-mentioned embodiment of the optoelectronic device.

[0066] Step S54: spin coating or inkjet printing a luminescent material on the hole transport layer to prepare a luminescent layer; the luminescent material of this embodiment is preferably a quantum dot luminescent material, and the quantum dot luminescent material can refer to the material of the quantum dot luminescent layer in the embodiment of the above-mentioned optoelectronic device.

[0067] The following specific embodiments and comparative examples are used to specifically illustrate the relevant parameters of the method embodiments of the present application. The following embodiments are only partial embodiments of the present application and are not limitations of the present application.

[0068] In the following embodiments and comparative examples, the optoelectronic device is a quantum dot light-emitting device and the electronic functional layer is an electron transport layer as an example, wherein the quantum dot light-emitting device comprises an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode, and the specific device structure is ITO / PEDOT:PSS (30nm) / TFB (25nm) / QD (15nm) / ZnO (30nm) / / Ag (100nm).

[0069] Example 1

[0070] A glass substrate with ITO (containing an anode) was placed in detergent, deionized water, acetone, ethanol, and deionized water in turn, each ultrasonicated for 15 minutes, and then dried at 100°C; 30nm PEDOT:PSS was spin-coated on the glass substrate with ITO in an atmospheric environment, and annealed at 150°C in air for 15 minutes to form a hole injection layer; the glass substrate after the hole injection layer was prepared was transferred to a glove box, and a 25nm TFB film was obtained by spin coating, and a hole transport layer was formed after thermal annealing at 150°C for 30 minutes; a layer of quantum dot luminescent material was spin-coated on the glass substrate after the hole transport layer was prepared, with a spin coating thickness of 15nm, and thermally annealed at 100°C for 5 minutes in an atmospheric environment. min to obtain a quantum dot light-emitting layer; a ZnO film with a thickness of 30nm is spin-coated on the glass substrate after the quantum dot light-emitting layer is prepared, and is thermally annealed at 130°C for 15min to form an electron transport layer; the electron transport layer is surface passivated using a mixed solution of water, ethanol and glycerol, specifically, first soaked in the mixed solution for 30s, then spin-dried at a speed of 3000rpm, and finally thermally annealed at 70°C for 10min, wherein the volume ratio of water to ethanol in the mixed solution is 1:200, and the concentration of glycerol is 5mg / ml; finally, the glass substrate after the surface passivation treatment of the electron transport layer is transferred to an evaporator, 100nm of Ag is evaporated to form a cathode, and the preparation of the quantum dot light-emitting device is completed.

[0071] Example 2

[0072] A glass substrate with ITO (containing an anode) was placed in detergent, deionized water, acetone, ethanol, and deionized water in turn, and ultrasonicated for 15 minutes each time, and then dried at 100°C; in an atmospheric environment, 30nm of PEDOT:PSS was spin-coated on the glass substrate with ITO, and annealed at 150°C in air for 15 minutes to form a hole injection layer; the glass substrate after the hole injection layer was prepared was transferred to a glove box, and a 25nm TFB film was obtained by spin coating, and thermally annealed at 150°C for 30 minutes to form a hole transport layer; a layer of quantum dot luminescent material was spin-coated on the glass substrate after the hole transport layer was prepared, with a spin coating thickness of 15nm, and thermally annealed at 100°C for 5 minutes in an atmospheric environment to obtain a quantum dot luminescent layer; after the quantum dot luminescent layer was prepared A ZnO film with a thickness of 30 nm is spin-coated on a glass substrate, and is subjected to thermal annealing at 130° C. for 15 min to form an electron transport layer; the electron transport layer is surface passivated using a mixed solution of water, ethanol, and glycerol, specifically, firstly immersed in the mixed solution for 30 seconds, then spin-dried at a rotation speed of 3000 rpm, and finally subjected to thermal annealing at 70° C. for 10 min, wherein the volume ratio of water to ethanol in the mixed solution is 1:200, and the concentration of glycerol is 5 mg / ml; finally, the glass substrate after the surface passivation treatment of the electron transport layer is transferred to an evaporator, 100 nm of Ag is evaporated to form a cathode, and after the cathode is prepared, the glass substrate after the cathode preparation is further transferred to a hot stage, and is thermally treated at 130° C. for 15 min to complete the production of the quantum dot light-emitting device.

[0073] Comparative Example 1

[0074] The glass substrate with ITO (containing anode) was placed in detergent, deionized water, acetone, ethanol, and deionized water in turn, each ultrasonicated for 15 minutes, and then dried at 100°C; in an atmospheric environment, 30nm PEDOT:PSS was spin-coated on the glass substrate with ITO, and annealed at 150°C in air for 15 minutes to form a hole injection layer; the glass substrate with the hole injection layer was transferred to a glove box, and a 25nm TFB film was obtained by spin coating, and thermally annealed at 150°C for 30 minutes to form a Hole transport layer; spin coating a layer of quantum dot luminescent material on the glass substrate after preparing the hole transport layer, the spin coating thickness is 15nm, and thermal annealing is performed at 100℃ for 5min in an atmospheric environment to obtain a quantum dot luminescent layer; spin coating a layer of ZnO film on the glass substrate after preparing the quantum dot luminescent layer, the thickness is 30nm, and thermal annealing is performed at 130℃ for 15min to form an electron transport layer; the glass substrate after preparing the electron transport layer is transferred to an evaporator, evaporating 100nm of Ag to form a cathode, and completing the preparation of the quantum dot light-emitting device.

[0075] Comparative Example 2

[0076] The glass substrate with ITO (containing anode) was placed in detergent, deionized water, acetone, ethanol, and deionized water in turn, and each time ultrasonicated for 15 minutes, and then dried at 100°C; in an atmospheric environment, 30nm of PEDOT:PSS was spin-coated on the glass substrate with ITO, and annealed at 150°C in air for 15 minutes to form a hole injection layer; the glass substrate with the hole injection layer was transferred to a glove box, and a 25nm TFB film was obtained by spin coating, and thermally annealed at 150°C for 30 minutes to form a hole transport layer; a 100nm thick PEDOT:PSS film was spin-coated on the glass substrate with the hole transport layer; A layer of quantum dot light-emitting material is spin-coated with a thickness of 15 nm, and thermally annealed at 100° C. for 5 min in an atmospheric environment to obtain a quantum dot light-emitting layer; a layer of ZnO film is spin-coated on the glass substrate after the quantum dot light-emitting layer is prepared, with a thickness of 30 nm, and thermally annealed at 130° C. for 15 min to form an electron transport layer; the glass substrate after the electron transport layer is prepared is transferred to an evaporator, and 100 nm of Ag is evaporated to form a cathode. After the cathode is prepared, the glass substrate with the cathode prepared is further transferred to a hot stage, and heat treated at 130° C. for 15 min to complete the preparation of the quantum dot light-emitting device.

[0077] The performance of the quantum dot light-emitting devices prepared in the above embodiments and comparative examples was tested, and the test results were shown in Table 1 below.

[0078] Table 1

[0079] CE(cd / A) T95@1000nit(h) Example 1 9.5 136.34 Example 2 11.7 240.56 Comparative Example 1 3.5 0.23 Comparative Example 2 4.1 0.91

[0080] The current efficiency CE represents the current efficiency of the light-emitting device at 1000 nit.

[0081] T95@1000nit(h) means the T95 lifetime at 1000nit, which is used to express the lifetime of quantum dot light-emitting devices. T95 represents the time taken for the maximum brightness of the quantum dot light-emitting device to decay to 95%. The T95 lifetime at 1000nit is the time taken for the quantum dot light-emitting device to decay to 95%, which is about 950nit.

[0082] It can be seen from Table 1 that, compared with Comparative Example 1, the quantum dot light-emitting device prepared in Example 1 has the step of performing surface passivation treatment on the electron transport layer using a mixed solution of water, ethanol and glycerol, and the performance of the quantum dot light-emitting device of Example 1 is much better than that of Comparative Example 1. Similarly, compared with Comparative Example 2, the quantum dot light-emitting device prepared in Example 2 has the step of performing surface passivation treatment on the electron transport layer using a mixed solution of water, ethanol and glycerol, and the performance of the quantum dot light-emitting device of Example 2 is much better than that of Comparative Example 2. It can be seen that after the glycerol in the mixed solution is dispersed in the mixed solvent of water and ethanol, the glycerol can be adsorbed on the interface of the zinc oxide layer to passivate defects and increase the adsorption of water in the mixed solution by the zinc oxide layer. The passivation of glycerol and the adsorption of water have obvious improvement effects on the interface between the zinc oxide layer and the cathode.

[0083] At the same time, compared with Example 1, Example 2 adds a step of heat treatment after the cathode preparation is completed, and the performance of the quantum dot light-emitting device of Example 2 is greatly improved compared with Example 1. It can be seen that heat treatment after the cathode preparation is completed can improve the treatment effect of the mixed solution on the zinc oxide layer and the cathode interface.

[0084] It can be seen from the above embodiments and comparative examples that the present application uses a mixed solution of ethanol, water and glycerol to perform surface treatment on the zinc oxide layer, and heat treats the cathode after preparation of the light-emitting device, which can greatly improve the performance of the light-emitting device.

[0085] An embodiment of the present application further provides a display device, which includes the above-mentioned optoelectronic device or includes an optoelectronic device prepared according to the above-mentioned preparation method, and the optoelectronic device is specifically a light-emitting device.

[0086] The display device can be any electronic product with a display function, including but not limited to smart phones, tablet computers, laptops, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, car displays, televisions or e-book readers, among which smart wearable devices can be, for example, smart bracelets, smart watches, virtual reality (VR) helmets, etc.

[0087] The optoelectronic devices and preparation methods thereof provided in the embodiments of the present application are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the methods and core ideas of the present application. At the same time, for technicians in this field, according to the ideas of the present application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A photoelectric device, comprising an electronic functional layer, characterized in that: The electronic functional layer comprises an electronic functional material layer and a glycerol passivation layer.

2. The optoelectronic device according to claim 1, characterized in that The material of the electronic functional material layer includes metal oxides, doped metal oxides, II-VI semiconductor materials, III-V semiconductor materials and I-III-VI semiconductor materials, and the glycerol passivation layer includes mutually adsorbed glycerol and the material of the electronic functional material layer.

3. The optoelectronic device according to claim 2, characterized in that The glycerin passivation layer further contains water, and the water is adsorbed to the material of the electron transport material layer of the glycerin passivation layer through the glycerin.

4. The optoelectronic device according to claim 2 or 3, characterized in that: The metal oxide is selected from one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, aluminum zinc oxide, manganese zinc oxide, tin zinc oxide, lithium zinc oxide, and indium tin oxide; the doped elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium; the II-VI semiconductor group material is selected from one or more of ZnS, ZnSe, and CdS; the III-V semiconductor group material is selected from one or more of InP and GaP; the I-III-VI group semiconductor material is selected from one or more of CuInS and CuGaS.

5. The optoelectronic device according to claim 1, wherein: The photoelectric device also comprises an anode, a light-emitting layer and a cathode stacked in sequence, wherein the electronic functional layer is arranged between the light-emitting layer and the cathode; Optionally, the cathode and the anode are independently selected from a doped metal oxide particle electrode, a composite electrode of a metal and a metal oxide, a graphene electrode, a carbon nanotube electrode, a metal electrode or an alloy electrode; the material of the doped metal oxide particle electrode is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide; the composite electrode of a metal and a metal oxide is selected from AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS; and the material of the metal electrode is selected from one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg and Ba; Optionally, the material of the light-emitting layer includes an organic light-emitting material and a quantum dot light-emitting material, and the organic light-emitting material includes 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine iridium(III)], 4,4',4"-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine iridium], diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, At least one of TTA materials, TADF materials, polymers containing BN covalent bonding, HLCT materials, and Exciplex luminescent materials; the quantum dot luminescent material includes at least one of single structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials; the material of the single structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots are selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds; the II-V Group I compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSe S, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZ At least one of nSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe; the IV-VI group compound is selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe;The III-V compound is selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, and AlN P, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInN P, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb; the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material is selected from doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs; + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - ,I - At least one of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is selected from Cl - Br - ,I - At least one of .

6. A method for preparing a photoelectric device, characterized in that: The preparation method comprises: Providing a substrate including a first electrode, and preparing an electronic functional material layer on the first electrode; A solution containing glycerol is disposed on the electronic functional material layer by a solution method, and a surface of the electronic functional material layer is passivated to form a glycerol passivation layer; A second electrode is prepared on the glycerol passivation layer to obtain the photoelectric device.

7. The method for preparing a photoelectric device according to claim 6, characterized in that: Before preparing the second electrode, the method further comprises: Performing heat treatment on the substrate after the glycerol passivation layer is formed; Optionally, the heat treatment temperature is 50°C to 80°C, and the treatment time is 5 min to 20 min.

8. The method for preparing a photoelectric device according to claim 6 or 7, characterized in that: The solution containing glycerol contains multiple solvents, and the multiple solvents include at least alcohol organic solvents and water solvents; Optionally, the volume ratio of the water solvent to the alcohol organic solvent is (1:10000) to (1:10); Optionally, the concentration of glycerol in the solution is 0.1 mg / mL to 20 mg / mL.

9. The method for preparing a photoelectric device according to claim 6 or 7, characterized in that: After preparing the second electrode, the method further comprises: Performing a secondary heat treatment on the photoelectric device after the second electrode is formed; Optionally, the temperature of the secondary heat treatment is 110° C. to 140° C., and the treatment time is 5 min to 60 min.

10. A display device, characterized in that: The display device comprises the optoelectronic device according to any one of claims 1 to 5, or the optoelectronic device prepared by the preparation method according to any one of claims 6 to 9.

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