Method of manufacturing display device

Abstract

A method of manufacturing a display apparatus is provided. The method comprises the following steps: forming a pixel electrode on a substrate; forming a pixel defining layer having a first opening exposing a central portion of the pixel electrode and a blocking portion defining the first opening; forming a first photosensitive layer on the pixel electrode to cover the first opening; forming an auxiliary electrode on the blocking part, wherein the auxiliary electrode is provided with a second opening for exposing the first photosensitive layer; forming a second photosensitive layer on the auxiliary electrode, wherein the second photosensitive layer is provided with a third opening for exposing the first photosensitive layer; and removing the first photosensitive layer and the second photosensitive layer.

Description

[0001] This application is a divisional application of the invention with application date of December 25, 2018, application number 201811588804.2 and name “display device”.

[0002] CROSS-REFERENCE TO RELATED APPLICATIONS

[0003] This application claims priority to and the benefit of Korean Patent Application No. 10-2017-0179804 filed on December 26, 2017, in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0004] One or more exemplary embodiments relate to a display device and a method for manufacturing the same, and, for example, to a display device having a high-quality intermediate layer and / or a conductive layer disposed on a pixel electrode and a method for manufacturing the same. Background Art

[0005] The organic light emitting display device is a display device in which each of the pixels includes an organic light emitting diode. The organic light emitting diode includes a pixel electrode, an opposite electrode facing the pixel electrode, and an emission layer interposed between the pixel electrode and the opposite electrode.

[0006] In the case of realizing a full-color organic light-emitting display device, light of different colors is emitted for each pixel area, and a deposition mask can be used to form an emission layer of each pixel in the pixel and a counter electrode formed integrally in a plurality of pixels. As the resolution of the organic light-emitting display device gradually increases, the width of the opening slit of the mask used in the deposition process gradually narrows, and its distribution should be further reduced. In addition, in order to manufacture a high-resolution organic light-emitting display device, the shadow effect should be reduced or eliminated. Therefore, a method in which the deposition process is performed while the substrate and the mask are in close contact with each other can be used.

[0007] However, when the deposition process is performed while the substrate and the mask are in close contact with each other, the mask may damage the pixel defining layer. In order to prevent or reduce this effect, a spacer may be arranged on the pixel defining layer. However, this adds an additional process, and the thickness of the organic light emitting display device increases due to the spacer. Summary of the invention

[0008] One or more exemplary embodiments provide a display device having a high-quality intermediate layer and / or a conductive layer disposed on a pixel electrode and a method of manufacturing the display device. However, this is merely an example, and the scope of the present disclosure is not limited thereto.

[0009] Additional aspects of the embodiments will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented exemplary embodiments.

[0010] According to one or more exemplary embodiments, a display device includes: a substrate; a pixel electrode located on the substrate; a pixel defining layer having a first opening that exposes a central portion of the pixel electrode and a blocking portion that defines the first opening; an auxiliary electrode located on the blocking portion; an intermediate layer located on the pixel electrode; and a counter electrode located on the intermediate layer and in electrical contact with the auxiliary electrode.

[0011] The auxiliary electrode may include aluminum (Al).

[0012] The intermediate layer may be in contact with the auxiliary electrode.

[0013] The counter electrode may expose at least a portion of the auxiliary electrode.

[0014] The auxiliary electrode may have a second opening exposing a central portion of the pixel electrode, and the second opening may be larger than the first opening.

[0015] According to one or more exemplary embodiments, a display device includes: a substrate; a plurality of pixel electrodes spaced apart from each other and patterned on the substrate; a pixel defining layer having a plurality of first openings exposing a central portion of each of the plurality of pixel electrodes; an auxiliary electrode extending along a first direction on the pixel defining layer; a plurality of intermediate layers respectively arranged on the plurality of pixel electrodes; and a plurality of counter electrodes respectively arranged on the plurality of intermediate layers so as to face the corresponding pixel electrodes and be in electrical contact with the auxiliary electrodes.

[0016] The auxiliary electrode may include Al.

[0017] Each of the plurality of intermediate layers may be in contact with the auxiliary electrode.

[0018] A plurality of intermediate layers may be arranged to be spaced apart from each other.

[0019] A distance between adjacent counter electrodes among the plurality of counter electrodes may be smaller than a width of the auxiliary electrode.

[0020] The auxiliary electrode may have a plurality of second openings respectively corresponding to the plurality of first openings, and the second openings may be larger than the first openings (eg, the second openings may have a larger aperture than that of the corresponding first openings).

[0021] According to one or more exemplary embodiments, a method for manufacturing a display device includes: forming a pixel electrode on a substrate; forming a pixel defining layer, the pixel defining layer having a first opening that exposes a central portion of the pixel electrode and a blocking portion that defines the first opening; forming a first photosensitive layer on the pixel electrode to cover the first opening; forming an auxiliary electrode on the blocking portion, the auxiliary electrode having a second opening that exposes the first photosensitive layer; forming a second photosensitive layer on the auxiliary electrode, the second photosensitive layer having a third opening that exposes the first photosensitive layer; and removing the first photosensitive layer and the second photosensitive layer.

[0022] The forming of the first photosensitive layer may include: forming a first photosensitive material on the entire surface of the substrate to cover the pixel defining layer and the central portion of the pixel electrode; and patterning the first photosensitive material.

[0023] The formation of the auxiliary electrode may include forming a conductive material on the entire surface of the substrate to cover the first photosensitive layer and patterning the conductive material to form a second opening; and the formation of the second photosensitive layer may include forming a second photosensitive material on the conductive material and patterning the second photosensitive material to form a third opening.

[0024] The forming of the second opening and the forming of the third opening may be performed simultaneously (eg, synchronously).

[0025] The second opening may be larger than the first opening.

[0026] The method may also include: forming a non-photosensitive layer on the auxiliary electrode; forming a shadow layer having a first opening area on the non-photosensitive layer to correspond to the pixel electrode; forming a second opening area larger than the first opening area in the non-photosensitive layer to correspond to the first opening area; forming an intermediate layer on the pixel electrode through the first opening area and the second opening area; and forming a counter electrode on the intermediate layer through the first opening area and the second opening area.

[0027] The intermediate layer and the counter electrode may be in contact with the auxiliary electrode.

[0028] The second opening region may be formed to be larger than the second opening of the auxiliary electrode to expose at least a portion of the auxiliary electrode.

[0029] The auxiliary electrode may include Al.

[0030] These general and specific embodiments may be implemented by using a system, a method, a computer program, or a combination thereof. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] These and / or other aspects of the embodiments will become apparent and more readily understood from the following description of exemplary embodiments in conjunction with the accompanying drawings, in which:

[0032] Figures 1 to 11 is a cross-sectional view for illustrating a method of manufacturing a display device according to an embodiment;

[0033] Fig.12 is a plan view of a display device according to an embodiment;

[0034] Fig.13 is along Fig.12 A cross-sectional view of a display device taken along line XX;

[0035] Fig.14 is a plan view of a display device according to an embodiment; and

[0036] Fig.15 is along Fig.14 A cross-sectional view of a display device taken along line XX. DETAILED DESCRIPTION

[0037] Reference will now be made in more detail to exemplary embodiments, examples of which are shown in the accompanying drawings, wherein the same reference numerals represent the same elements throughout. In this regard, the present exemplary embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Therefore, exemplary embodiments are described below only by reference to the accompanying drawings to explain the various aspects of the embodiments of the present disclosure. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Statements such as "at least one of..." modify the entire column of elements when located after a column of elements, rather than modifying the individual elements in the column.

[0038] It should be understood that although the terms "first", "second", etc. may be used to describe various components in this article, these components should not be limited by these terms. These terms are only used to distinguish one component from another component. Unless the context clearly indicates otherwise, the singular forms "a", "an", and "the" as used herein are also intended to include plural forms.

[0039] It will be understood that terms such as "including," "comprising," and "having" used herein indicate the presence of stated features or components, but do not preclude the presence or addition of one or more other features or components. It should be further understood that when a layer, region, or component is referred to as being "on" another layer, region, or component, it can be directly or indirectly on the other layer, region, or component. For example, intervening layers, regions, or components may be present.

[0040] For the convenience of explanation, the size of the components in the drawings may be exaggerated. In other words, since the size and thickness of the components in the drawings may be arbitrarily shown for the convenience of explanation, the following embodiments are not limited thereto.

[0041] The x-axis, y-axis, and z-axis are not limited to the three axes of the rectangular coordinate system and can be interpreted in a broader sense. For example, the x-axis, y-axis, and z-axis may be perpendicular to each other (e.g., substantially perpendicular), or may represent different directions that are not perpendicular to each other (e.g., substantially not perpendicular).

[0042] When a certain embodiment can be implemented in different ways, a specific process can be performed in a different order than described. For example, two processes described successively can be performed substantially simultaneously or in a reverse order to the described order.

[0043] Figures 1 to 11 is a cross-sectional view for illustrating a method of manufacturing a display device according to an embodiment.

[0044] First reference Figure 1 , a pixel electrode 210 may be formed on the substrate 100 .

[0045] Before the pixel electrode 210 is formed on the substrate 100 , various appropriate layers may be formed. Figure 1 It is shown that a thin film transistor TFT and a storage capacitor are formed on a substrate 100 , and a planarization insulating layer 170 is formed to cover the thin film transistor TFT and the storage capacitor, and then a pixel electrode 210 is formed on the planarization insulating layer 170 .

[0046] The substrate 100 may be formed of various suitable materials, such as glass materials, metal materials, and / or plastic materials such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and / or polyimide. A buffer layer 110 formed to prevent impurities from penetrating (or reduce such impurities from penetrating) into the semiconductor layer of the thin film transistor TFT, a gate insulating layer 130 for insulating the semiconductor layer of the thin film transistor TFT from the gate electrode, an interlayer dielectric layer 150 for insulating the source electrode / drain electrode of the thin film transistor TFT from the gate electrode, and a planarization insulating layer 170 having a substantially flat top surface and covering the thin film transistor TFT may be formed on the substrate 100.

[0047] The buffer layer 110 may include silicon oxide (SiO x ) and / or a nitride film such as silicon nitride (SiN), and the gate insulating layer 130 and the interlayer dielectric layer 150 may include silicon oxide (SiO 2 ), silicon nitride (SiN), silicon oxynitride (SiON), aluminum oxide (Al 2 O 3 ), Tantalum Oxide (Ta 2 O 5 ), hafnium oxide (HfO 2 ) or zinc oxide (ZrO2 ). The planarization insulating layer 170 may include an organic material such as acryl, benzocyclobutene (BCB), polyimide, or hexamethyldisiloxane (HMDSO). The buffer layer 110, the gate insulating layer 130, the interlayer dielectric layer 150, and the planarization insulating layer 170 may be a single layer or a multilayer.

[0048] Figure 1 The insulating layer from the buffer layer 110 to the planarization insulating layer 170 is shown, but the present disclosure is not limited thereto. In another embodiment, the insulating layer may be further arranged according to the structure of the thin film transistor TFT and the storage capacitor.

[0049] The pixel electrode 210 may include a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3 ), indium gallium oxide (IGO) or aluminum zinc oxide (AZO). Alternatively, the pixel electrode 210 may include a reflective layer containing silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr) or a compound thereof and / or a reflective layer composed of ITO, IZO, ZnO or In on the reflective layer. 2 O 3 The pixel electrode 210 may be a single layer or a multi-layer.

[0050] For example, the pixel electrode 210 may be formed by forming a layer including a material for forming the pixel electrode 210 on the planarization insulating layer 170 and then wet-etching the layer.

[0051] refer to Figure 2 , an insulating layer 180 (hereinafter, referred to as a pixel defining layer) is formed, the insulating layer 180 including a first opening 181 overlapping the pixel electrode 210 , and a blocking portion 182 defining the first opening 181 .

[0052] The pixel electrode 210 is exposed through the first opening 181 of the pixel defining layer 180. The blocking portion 182 of the pixel defining layer 180 can prevent arcing from occurring at the end of the pixel electrode 210 (or can reduce the possibility or amount of such arcing) by increasing the distance between the end of the pixel electrode 210 and the counter electrode 230 to be described below.

[0053] The pixel defining layer 180 may include an organic material and / or an inorganic material, and may be formed as a single layer or multiple layers. The organic material may include an olefin-based organic material, an acrylic-based organic material, an imide-based organic material, etc. The imide organic material may be, for example, polyimide (PI). The inorganic material may include SiO2 or SiN.

[0054] When the pixel defining layer 180 includes an organic material, a baking process may be performed after forming the pixel defining layer 180. For example, after forming the pixel defining layer 180, residual gas in the organic material of the pixel defining layer 180 may be removed by baking the pixel defining layer 180 at a temperature of about 250° C. for about 1 hour.

[0055] refer to Figure 3 , a first photosensitive material 190' may be coated on the pixel defining layer 180. The first photosensitive material 190' may be applied to the entire (e.g., substantially the entire) surface of the substrate 100 so as to cover the pixel defining layer 180 and the pixel electrode 210 exposed by the first opening 181 of the pixel defining layer 180. The first photosensitive material 190' may be a photoresist (PR). Therefore, the first photosensitive material 190' may be patterned into a first photosensitive layer 190 to be described below through a post-exposure development process.

[0056] refer to Figure 4 , the first photosensitive layer 190 may be formed on the pixel electrode 210 by patterning the first photosensitive material 190'. The first photosensitive layer 190 may be formed on the pixel electrode 210 exposed by the first opening 181 and may cover the first opening 181. For example, the fact that the first photosensitive layer 190 covers the first opening 181 means that the first photosensitive layer 190 is formed to be larger than the first opening 181 in a plan view. Figure 4 As shown, the first photosensitive layer 190 may be formed to extend toward the blocking portion 182 of the pixel defining layer 180 . The central portion of the pixel electrode 210 exposed through the first opening 181 may be completely covered by the first photosensitive layer 190 .

[0057] refer to Figure 5 , a layer including a conductive material 192' may be formed on the first photosensitive layer 190 to cover the first photosensitive layer 190. Thereafter, a layer including a second photosensitive material 194' may be formed on the layer including the conductive material 192'. Here, the layer including the conductive material 192' and the layer including the second photosensitive material 194' may be formed on the entire (e.g., substantially the entire) surface of the substrate 100.

[0058] The layer including the conductive material 192' may be formed on the substrate 100 by a coating method, a printing method, a deposition method, etc. In an embodiment, the conductive material 192' may include Al.

[0059] In addition, the second photosensitive material 194' may be PR. In embodiments, the second photosensitive material 194' may be the same (eg, substantially the same) material as the first photosensitive material 190', or may be a different material.

[0060] refer to Figure 6 , a portion of the layer including the conductive material 192 ′ and a portion of the layer including the second photosensitive material 194 ′ may be removed together to form the auxiliary electrode 192 and the second photosensitive layer 194 .

[0061] The auxiliary electrode 192 and the second photosensitive layer 194 may be formed on the blocking portion 182 of the pixel defining layer 180. In an embodiment, a portion of the conductive material 192' and a portion of the second photosensitive material 194' may be removed by etching, wherein a material capable of simultaneously (e.g., synchronously) etching the second photosensitive material 194' and the conductive material 192' may be used as an etchant. For example, in the process of forming the auxiliary electrode 192 and the second photosensitive layer 194, a solvent capable of simultaneously (e.g., synchronously) etching the second photosensitive material 194' and the conductive material 192', such as tetramethylammonium hydroxide (TMAH), may be used.

[0062] In more detail, in the embodiment described above, the auxiliary electrode 192 may include Al. The auxiliary electrode 192 may have a second opening 192a exposing the first opening 181. The fact that the second opening 192a exposes the first opening 181 may mean that the second opening 192a is formed to be larger than the first opening 181 in a plan view (e.g., the second opening 192a may have an opening or aperture larger than that of the first opening 181, e.g., a larger diameter).

[0063] The second photosensitive layer 194 may have a third opening 194a, and the size of the third opening 194a may be as follows: Figure 6 The third opening 194a is shown to be the same size (e.g., substantially the same) as the second opening 192a. Because the auxiliary electrode 192 and the second photosensitive layer 194 are formed by etching together, the auxiliary electrode 192 and the second photosensitive layer 194 may have the same etching surface, and therefore, the size of the third opening 194a may be the same size (e.g., substantially the same) as the second opening 192a.

[0064] Meanwhile, the second opening 192a of the auxiliary electrode 192 and the first photosensitive layer 190 may be spaced apart from each other by a set (or predetermined) distance d. A portion of the pixel defining layer 180 may be exposed by the set (or predetermined) distance d between the second opening 192a of the auxiliary electrode 192 and the first photosensitive layer 190. The first photosensitive layer 190 may be completely (e.g., substantially completely) exposed by the second opening 192a of the auxiliary electrode 192.

[0065] refer to Figure 7, the first photosensitive layer 190 formed on the pixel electrode 210 and the second photosensitive layer 194 formed on the auxiliary electrode 192 may be removed. The first photosensitive layer 190 and the second photosensitive layer 194 may be removed using a photoresist stripping solution.

[0066] As a comparative example of the present disclosure, in the process of forming the auxiliary electrode 192, a layer including a conductive material 192' may be directly formed on the pixel electrode 210, a layer including a second photosensitive material 194' may be formed on the conductive material 192', and the auxiliary electrode 192 may be formed on the pixel defining layer 180 by simultaneously (e.g., synchronously) patterning the conductive material 192' and the second photosensitive material 194'. However, in the process of forming the auxiliary electrode 192 by patterning the conductive material 192' and the second photosensitive material 194' as described above, there is a problem that the surface of the pixel electrode 210 that is in direct contact with the auxiliary electrode 192 is stripped by the etchant used to simultaneously (e.g., synchronously) etch the second photosensitive material 194' and the conductive material 192'.

[0067] In the method of manufacturing a display device according to an embodiment, a first photosensitive layer 190 may be formed on the pixel electrode 210 exposed by the first opening 181; a conductive material 192' and a second photosensitive material 194' for forming an auxiliary electrode 192 and a second photosensitive layer 194 may be sequentially coated on the first photosensitive layer 190; and the auxiliary electrode 192 may be formed on the pixel defining layer 180 by patterning the conductive material 192' and the second photosensitive material 194' together. When the auxiliary electrode 192 is formed by the manufacturing method, the conductive material 192' for forming the auxiliary electrode 192 and the pixel electrode 210 exposed by the first opening 181 may not directly contact each other, and therefore, the problem of peeling off the surface of the pixel electrode 210 exposed by the first opening 181 may be solved.

[0068] refer to Figure 8 A non-photosensitive layer 310 may be formed on the pixel defining layer 180 on which the auxiliary electrode 192 is formed. A shadow layer 330 may be formed on the non-photosensitive layer 310. Figure 8 The process of forming the non-photosensitive layer 310 and the shadow layer 330 shown in FIG. 1 is as follows.

[0069] First, the non-photosensitive layer 310 may be formed to cover the entire (e.g., substantially the entire) substrate 100 on which the pixel defining layer 180 is formed. The non-photosensitive layer 310 may be integrally formed to cover the first opening 181 and the blocking portion 182 of the pixel defining layer 180. The non-photosensitive layer 310 may be formed by a coating method, a printing method, a vapor deposition method, or the like.

[0070] The non-photosensitive layer 310 may include a fluorine-based non-photosensitive material. The non-photosensitive layer 310 may include, for example, a fluorine-containing polymer, and the fluorine-containing polymer may be formed by a polymer containing 20wt% to 60wt% of fluorine. For example, the fluorine-containing polymer contained in the non-photosensitive layer 310 may include at least one of polytetrafluoroethylene, polytrifluorochloroethylene, polydichlorodifluoroethylene, a copolymer of trifluorochloroethylene and dichlorodifluoroethylene, a copolymer of tetrafluoroethylene and perfluoroalkyl vinyl ether, a copolymer of trifluorochloroethylene and perfluoroalkyl vinyl ether, a copolymer of tetrafluoroethylene and perfluoroalkyl vinyl ether, a copolymer of perfluoroalkyl vinyl ether and perfluoroalkyl vinyl ether, a copolymer of tetrafluoroethylene and perfluoroalkyl vinyl ether, and a copolymer of trifluorochloroethylene and perfluoroalkyl vinyl ether.

[0071] Thereafter, a shadow layer 330 may be formed on the non-photosensitive layer 310. The shadow layer 330 may also be formed on the entire (e.g., substantially the entire) surface of the non-photosensitive layer 310 to cover the substrate 100 as a whole. In an embodiment, the shadow layer 330 may be a photoresist layer or an inorganic layer. The inorganic layer may be a single layer or a multilayer including at least one of a metal and an inorganic insulating material. The metal may be formed by atomic layer deposition (ALD) or vapor deposition (e.g., chemical vapor deposition or physical vapor deposition), and examples of chemical vapor deposition may include atmospheric pressure chemical vapor deposition (APCVD), low pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD), high density plasma chemical vapor deposition (HDPCVD) and atomic layer chemical vapor deposition (ALCVD), and examples of physical vapor deposition may include sputtering, thermal evaporation, and electron beam evaporation. The inorganic insulating material may be formed by vapor deposition such as PECVD.

[0072] The shadow layer 330 may be patterned to have a first opening region 330OP corresponding to the pixel electrode 210. For example, the first opening region 330OP may be formed by etching a portion of the shadow layer 330 using a photoresist on the shadow layer 330. Here, the first opening region 330OP may be a region corresponding to the first opening 181. The non-photosensitive layer 310 formed under the shadow layer 330 may then be patterned to have a second opening region 310OP.

[0073] like Figure 8As shown, the second opening area 310OP may overlap with the first opening area 330OP. In the present embodiment, the width W2 of the second opening area 310OP may be greater than the width W1 of the first opening area 330OP. This is because in this structure, the shadow layer 330 is first patterned to have a first opening area 330OP, and then an undercut structure UC is formed during the process of etching the non-photosensitive layer 310 through the first opening area 330OP. The width W2 of the second opening area 310OP may be greater than the width OW of the first opening 181 of the pixel defining layer 180 (or the width of the pixel electrode 210 exposed through the first opening 181). Importantly, in the present embodiment, the second opening area 310OP may be larger than the second opening 192a of the auxiliary electrode 192. In other words, at least some of the auxiliary electrode 192 may be exposed through the second opening area 310OP. As described below, this is to form the intermediate layer 220 ( Fig. 9 ) and the counter electrode 230 ( Fig.10 In the process shown in FIG. 3 , the auxiliary electrode 192 exposed through the second opening region 310OP is electrically contacted with the counter electrode 230.

[0074] A solvent capable of etching the material (eg, fluorine-containing polymer) of the non-photosensitive layer 310 may be used to remove a portion of the non-photosensitive layer 310. For example, the solvent capable of etching the fluorine-containing polymer may include hydrofluoroether (HFE).

[0075] refer to Fig. 9 The intermediate layer 220 may be formed using a stack of a shadow layer 330 and a non-photosensitive layer 310 having first and second opening regions 330OP and 310OP, respectively. The intermediate layer 220 may be an organic layer including an emission layer (EML) 222. Fig. 9 An enlarged view of FIG. 2 includes a first functional layer 221 between the pixel electrode 210 and the EML 222 and a second functional layer 223 opposite to the first functional layer 221 , wherein the EML 222 is interposed between the first functional layer 221 and the second functional layer 223 .

[0076] The intermediate layer 220 may include a low molecular weight material or a polymer material. When the intermediate layer 220 includes a low molecular weight material, the intermediate layer 220 may be formed to have a single or composite structure by stacking a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML) 222, an electron transport layer (ETL) and an electron injection layer (EIL). The intermediate layer 220 may include various suitable organic materials, such as copper phthalocyanine (CuPc), N, N'-dinaphthyl-1-yl-N, N'-biphenyl-benzidine (NPB), and / or tri-8-hydroxyquinoline aluminum (Alq3 ). HIL and HTL can correspond to Fig. 9 The first functional layer 221 in the embodiment of the present invention may correspond to the first functional layer 221 , and the ETL and the EIL may correspond to the second functional layer 223 .

[0077] When the intermediate layer 220 includes a polymer material, the intermediate layer 220 may have a structure including a first functional layer 221 including an HTL and an EML 222. The HTL may include poly-3,4-ethylene-dioxythiophene (PEDOT), and the EML may include a polymer material such as polyphenylene vinylene (PPV) and polyfluorene.

[0078] The intermediate layer 220 may be formed by vacuum deposition. In an embodiment, the intermediate layer 220 may be formed by thermal deposition under a vacuum state.

[0079] When forming the intermediate layer 220, the material constituting the intermediate layer 220 is tilted in a direction (for example, along a direction perpendicular to (eg, substantially perpendicular to) the upper surface of the pixel electrode 210) (z direction). Fig. 9 Path “A”) is formed (eg, deposited) at least on the pixel electrode 210. For example, Fig. 9 As shown in another enlarged view of FIG. 1 , a material constituting the intermediate layer 220 may be deposited on the pixel electrode 210, the upper surface of the blocking portion 182 adjacent to the pixel electrode 210, and the auxiliary electrode 192. The width of the intermediate layer 220 may be formed to be greater than the width of the pixel electrode 210 exposed through the first opening 181, so that an end portion 220E of the intermediate layer 220 may contact the upper surface of the blocking portion 182 adjacent to the pixel electrode 210.

[0080] In an embodiment, Fig. 9 In another enlarged view of the embodiment of the present invention, the end 220E of the intermediate layer 220 can directly contact the auxiliary electrode 192 exposed by the second opening area 310OP. However, the present disclosure is not limited to this. As long as the width of the intermediate layer 220 is formed to be greater than the width of the pixel electrode 210 exposed by the first opening 181, it is sufficient. At the same time, when the end 220E of the intermediate layer 220 directly contacts the auxiliary electrode 192 exposed by the second opening area 310OP, the end 220E of the intermediate layer 220 needs to be separated from the non-photosensitive layer 310 by a set (or predetermined) distance. The electrode 230 described below contacts the auxiliary electrode 192 by a set (or predetermined) distance between the end 220E of the intermediate layer 220 and the non-photosensitive layer 310.

[0081] like Fig.10As shown, the counter electrode 230 may be formed using a stack of a shadow layer 330 and a non-photosensitive layer 310 having first and second opening regions 330OP and 310OP, respectively.

[0082] The counter electrode 230 may be formed by vacuum deposition. The counter electrode 230 may be formed by physical vapor deposition such as thermal deposition or sputtering in a vacuum state. For example, when the counter electrode 230 is formed by stacking the shadow layer 330 and the non-photosensitive layer 310 in the same (e.g., substantially the same) manner as the intermediate layer 220 and by the same (e.g., substantially the same) method (e.g., thermal deposition) as the intermediate layer 220, the manufacturing process of the display device can be simplified, and the intermediate layer 220 and the counter electrode 230 can be formed in the same chamber. Therefore, the introduction of impurities or the formation of unnecessary layers due to the discontinuity of the process of forming the intermediate layer 220 and the conductive layer and / or the discontinuity of the chamber in which the intermediate layer 220 and the conductive layer are formed can be prevented (or reduced).

[0083] The counter electrode 230 may be an electrode (conductive layer) facing the pixel electrode 210 , and in this case may be a reflective electrode or a transparent electrode. Alternatively, the counter electrode 230 may be a conductive protective layer for protecting the intermediate layer 220 .

[0084] The counter electrode 230 may include a conductive metal layer containing Ag, Mg, Al, ytterbium (Yb), calcium (Ca), lithium (Li), Au or a compound thereof, and / or may include a conductive oxide layer such as a transparent conductive oxide (TCO) layer. The transparent conductive oxide may include ITO, IZO, ZnO, In 2 O 3 In an embodiment, the counter electrode 230 may be an alloy including Ag and Mg (eg, including more Ag than Mg), and may be formed as a multi-layer including ITO or a single layer including the above materials.

[0085] When forming the counter electrode 230, the material constituting the counter electrode 230 may be tilted in a direction (eg, along a direction) that is tilted relative to a direction (z direction) that is perpendicular (eg, substantially perpendicular) to the substrate 100. Fig.10 Path "B"), deposited on the intermediate layer 220. For example, the material constituting the counter electrode 230 may be formed to cover the intermediate layer 220, such as Fig.10 As shown in the enlarged view of FIG. 310 , the counter electrode 230 may directly contact the auxiliary electrode 192 exposed through the second opening region 310OP. For example, the width of the counter electrode 230 may be formed to be greater than the width of the intermediate layer 220 , and the end 230E of the counter electrode 230 may be electrically in contact with the auxiliary electrode 192 .

[0086] refer to Fig.11 After forming the counter electrode 230, the non-photosensitive layer 310 and the shadow layer 330 may be removed. For example, while the non-photosensitive layer 310 is peeled off using a solvent or the like for etching the non-photosensitive layer 310, the shadow layer 330 and the materials of the intermediate layer 220 and the counter electrode 230 on the shadow layer 330 are also removed. Fig.11 As shown, the counter electrode 230 exposes at least a portion of the auxiliary electrode 192 .

[0087] Although the method of manufacturing a display device has been described so far, the present disclosure is not limited thereto. For example, a display device manufactured by the method of manufacturing a display device may also be within the scope of the present disclosure.

[0088] pass Figures 1 to 11 The display device manufactured by the above process and Fig.11 Same as shown in .

[0089] Fig.12 is a plan view of a display device according to an embodiment, and Fig.13 is along Fig.12 A cross-sectional view of a display device taken along line XX.

[0090] Figure 12 to Figure 13 A display device having a plurality of pixels (eg, red pixels, green pixels, and blue pixels) is shown.

[0091] refer to Figure 12 to Figure 13 , a plurality of pixel electrodes 210 may be disposed on the substrate 100. The plurality of pixel electrodes 210 may be spaced apart from each other and patterned. A thin film transistor TFT and a storage capacitor are formed before forming each pixel electrode 210, and as described above with reference to Figure 1 As described, the buffer layer 110 , the gate insulating layer 130 , the interlayer dielectric layer 150 , the planarizing insulating layer 170 , etc. may be formed. Each pixel electrode 210 includes the same material and is formed in the same process.

[0092] The pixel defining layer 180 may be disposed on the pixel electrode 210. The pixel defining layer 180 may include a plurality of first openings 181 for exposing a central portion of each of the pixel electrodes 210, and a blocking portion 182 for covering an end portion of each of the pixel electrodes 210. The process of forming the pixel defining layer 180 is as described above with reference to Figure 2 As described.

[0093] The auxiliary electrode 192 may be disposed on the blocking portion 182 of the pixel defining layer 180. The auxiliary electrode 192 may extend in the first direction (y direction), such as Fig.12In another embodiment, a plurality of auxiliary electrodes 192 may be formed in a grid shape on the blocking portion 182 of the pixel defining layer 180 except for the plurality of first openings 181. The auxiliary electrode 192 may have a plurality of second openings 192a respectively corresponding to the plurality of first openings 181. In this embodiment, the second openings 192a may be larger than the first openings 181.

[0094] Fig.14 is a plan view of a display device according to an embodiment, and Fig.15 is along Fig.14 A cross-sectional view of a display device taken along line XX.

[0095] Figure 14 to Figure 15 The intermediate layer 220R, 220G or 220B and the counter electrode 230R, 230G or 230B are respectively formed on Figure 12 to Figure 13 The structure on the pixel electrode 210 in FIG.

[0096] refer to Figure 14 to Figure 15 , an intermediate layer 220R emitting red light, an intermediate layer 220G emitting green light, and an intermediate layer 220B emitting blue light are disposed on the substrate 100. The red intermediate layer 220R, the green intermediate layer 220G, and the blue intermediate layer 220B are formed in separate processes, respectively. The red intermediate layer 220R, the green intermediate layer 220G, and the blue intermediate layer 220B may be formed independently. For example, the red intermediate layer 220R, the green intermediate layer 220G, and the blue intermediate layer 220B may be formed according to the reference Figures 3 to 11 The described process uses the non-photosensitive layer 310 and the shadow layer 330 each having an opening area to be formed separately.

[0097] At the same time, as mentioned above Fig.11 As described, after the red intermediate layer 220R, the green intermediate layer 220G, and the blue intermediate layer 220B are formed on the pixel electrode 210 in each process, the non-photosensitive layer 310 and the shadow layer 330 are removed. For example, while the non-photosensitive layer 310 is peeled off using a solvent or the like for etching the non-photosensitive layer 310, the shadow layer 330 and the materials of the intermediate layer 220 and the counter electrode 230 on the shadow layer 330 are also removed.

[0098] In the present embodiment, the intermediate layers 220R, 220G and 220B may be in contact with at least a portion of the auxiliary electrode 192. This may be understood to be due to the fact that a portion of the auxiliary electrode 192 is exposed by the second opening region 310OP of the non-photosensitive layer 310, as described above with reference to Fig. 9 As described.

[0099] On the other hand, the counter electrode 230R may be disposed on the middle layer 220R emitting red light. Similarly, the counter electrode 230G may be disposed on the middle layer 220G emitting green light, and the counter electrode 230B may be disposed on the middle layer 220B emitting blue light. In this embodiment, the counter electrodes 230R, 230G, and 230B may be formed in separate processes, respectively. Fig.15 As shown, each of the counter electrodes 230R, 230G and 230B may be larger than the intermediate layers 220R, 220G and 220B so as to cover the intermediate layers 220R, 220G and 220B. The intermediate layers 220R, 220G and 220B are arranged to be spaced apart from each other, and the distance between adjacent counter electrodes in the counter electrodes 230R, 230G and 230B is less than the width of the auxiliary electrode 192.

[0100] According to reference Figures 3 to 11 The described process forms the intermediate layer 220R and the counter electrode 230R corresponding to the red pixel by using the non-photosensitive layer 310 and the shadow layer 330 each having an opening area; removes the shadow layer 330 and the intermediate layer 220R and the counter electrode 230R on the shadow layer 330 by stripping the non-photosensitive layer 310 using a solvent for etching the non-photosensitive layer 310; and can form the intermediate layer 220R and the counter electrode 230R on the pixel electrode 210. Thereafter, according to reference Figures 3 to 11 According to the process described above, the intermediate layer 220G and the counter electrode 230G corresponding to the green pixel can be formed, and only the intermediate layer 220G and the counter electrode 230G can be left on the pixel electrode 210 by using the lift-off process. Figures 3 to 11 The described process can form the intermediate layer 220B and the counter electrode 230B corresponding to the blue pixel on the pixel electrode 210. Each of the counter electrodes 230R, 230G, and 230B can be used to protect the intermediate layers 220R, 220G, and 220B from solvents and the like during the stripping process.

[0101] Each of the electrodes 230R, 230G, and 230B may be arranged to contact at least a portion of the auxiliary electrode 192. In an embodiment, according to a method of manufacturing the intermediate layer 220R, 220G, and 220B and the electrodes 230R, 230G, and 230B using a stack of a shadow layer 330 having a first opening area 330OP and a second opening area 310OP and a non-photosensitive layer 310, the electrodes 230R, 230G, and 230B are spaced apart from each other and are arranged in each pixel. The electrodes 230R, 230G, and 230B should be electrically coupled (e.g., electrically connected) to each other so that a voltage is applied to the electrodes 230R, 230G, and 230B, and this can be achieved by the auxiliary electrode 192. Since each of the counter electrodes 230R, 230G, and 230B is in electrical contact with the auxiliary electrode 192 , a voltage may be commonly applied to the counter electrodes 230R, 230G, and 230B spaced apart from each other.

[0102] Figures 12 to 15 It is shown that the display device includes red pixels, green pixels and blue pixels, but the display device is not limited thereto. In another embodiment, the display device may also include red pixels, green pixels, blue pixels and white pixels.

[0103] According to the embodiments described above, a display device having a high-quality intermediate layer and / or a conductive layer disposed on a pixel electrode and a method for manufacturing the display device can be realized. However, the scope of the present disclosure is not limited to the embodiments described herein.

[0104] For ease of illustration, spatially relative terms such as "below," "below," "below," "above," "on," etc. are used herein to describe the relationship of one element or feature relative to another element or feature as shown in the figures. It will be understood that, in addition to the orientations described in the figures, the spatially relative terms are intended to encompass different orientations of the device in use or operation. For example, if the device is flipped in the figure, an element described as being "below" or "below" or "below" other elements or features will be oriented as being "above" the other elements or features. Thus, the exemplary terms "below" and "below" may include both above and below orientations. The device may be otherwise oriented (e.g., rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein may be interpreted accordingly.

[0105] As used herein, the terms "substantially," "approximately," and similar terms are used as terms of approximation, rather than as terms of degree, and are intended to take into account the inherent tolerance of measurements or calculations recognized by those of ordinary skill in the art. In addition, when describing embodiments of the present disclosure, the use of "may" refers to "one or more embodiments of the present disclosure." As used herein, the terms "use" and "used to" may be considered synonymous with the terms "utilizing" and "utilized to," respectively. In addition, the term "exemplary" means an example or illustration.

[0106] In addition, any numerical range recorded in this article is intended to include all sub-ranges of the same numerical precision contained in the recorded range. For example, the range of "1.0 to 10.0" is intended to include all sub-ranges between the recorded 1.0 minimum value and the recorded 10.0 maximum value (and including these two values), that is, having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as 2.4 to 7.6. Any maximum numerical limit recorded in this article is intended to include all smaller numerical limits contained in this article, and any minimum numerical limit recorded in this specification is intended to include all larger numerical limits contained in this article. Therefore, the applicant reserves the right to modify this specification (including claims) to explicitly record any sub-range contained in the range explicitly recorded in this article.

[0107] It should be understood that the exemplary embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects in each exemplary embodiment should generally be considered to be applicable to other similar features or aspects in other exemplary embodiments.

[0108] Although one or more exemplary embodiments have been described with reference to the drawings, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope defined by the appended claims and their equivalents.

Claims

1. A method for manufacturing a display device, the method comprising: forming a pixel electrode on a substrate; forming a pixel defining layer having a first opening exposing a central portion of the pixel electrode and a blocking portion defining the first opening; forming a first photosensitive layer on the pixel electrode to cover the first opening; forming an auxiliary electrode on the blocking portion, the auxiliary electrode having a second opening exposing the first photosensitive layer; forming a second photosensitive layer on the auxiliary electrode, wherein the second photosensitive layer has a third opening for exposing the first photosensitive layer; as well as The first photosensitive layer and the second photosensitive layer are removed.

2. The method according to claim 1, wherein: The forming of the first photosensitive layer comprises: forming a first photosensitive material on the entire surface of the substrate to cover the pixel defining layer and the central portion of the pixel electrode; and The first photosensitive material is patterned.

3. The method according to claim 1, wherein: The forming of the auxiliary electrode includes: forming a conductive material on the entire surface of the substrate to cover the first photosensitive layer and patterning the conductive material to form the second opening; and The forming of the second photosensitive layer includes: forming a second photosensitive material on the conductive material and patterning the second photosensitive material to form the third opening.

4. The method according to claim 3, wherein: The forming of the second opening and the forming of the third opening are performed simultaneously.

5. The method according to claim 3, wherein: The second opening is larger than the first opening.

6. The method according to claim 1, further comprising: forming a non-photosensitive layer on the auxiliary electrode; forming a shadow layer having a first opening area corresponding to the pixel electrode on the non-photosensitive layer; forming a second opening area in the non-photosensitive layer that is larger than the first opening area and corresponds to the first opening area; forming an intermediate layer on the pixel electrode through the first opening area and the second opening area; as well as A counter electrode is formed on the intermediate layer through the first opening region and the second opening region.

7. The method according to claim 6, wherein: The intermediate layer and the counter electrode are in contact with the auxiliary electrode.

8. The method according to claim 6, wherein: The second opening region is formed to be larger than the second opening of the auxiliary electrode to expose at least a portion of the auxiliary electrode.

9. The method according to claim 1, wherein: The auxiliary electrode includes aluminum.

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