Temperature control system, method for manufacturing semiconductor device, processing apparatus, and program

Abstract

The invention provides a technology capable of performing temperature control by switching a plurality of temperature sensors. The present invention has: a first control mode in which the temperature of a processing chamber is controlled on the basis of the detected temperature of a first temperature sensor disposed in a heating unit; a second control mode for controlling the temperature of the processing chamber on the basis of the detected temperature of a second temperature sensor provided on a holder for holding the substrate; and a switching unit configured to be capable of switching between a first control mode and a second control mode so as to perform temperature control in accordance with the state of the holder.

Description

Technical Field

[0001] The present disclosure relates to a temperature control system, a method for manufacturing a semiconductor device, a processing device, and a program. Background Art

[0002] As one of the steps in the process of manufacturing a semiconductor device, a predetermined process is performed on a wafer (hereinafter also referred to as a substrate) (see, for example, Patent Document 1).

[0003] The technology of controlling the temperature of the processing chamber using the temperature detected by the temperature sensor that moves with the wafer boat (hereinafter also referred to as the holder) is described. However, if the temperature is controlled using the temperature detected by the temperature sensor during the lifting and lowering of the holder, the position is inappropriate, so it may cause an inappropriate state such as abnormal heating.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: International Publication No. 2020-059722 Summary of the invention

[0007] Problems to be solved by the invention

[0008] The present disclosure provides a technology capable of switching a plurality of temperature sensors to perform temperature control.

[0009] Means for solving problems

[0010] According to one embodiment of the present disclosure, a technology is provided, comprising: a first control mode for controlling the temperature of a processing chamber based on a detected temperature of a first temperature sensor disposed on a heating portion; a second control mode for controlling the temperature of the processing chamber based on a detected temperature of a second temperature sensor disposed on a holding member for holding a substrate; and a switching portion configured to be able to switch between the first control mode and the second control mode so that temperature control is performed according to the state of the holding member.

[0011] Effects of the Invention

[0012] According to the present disclosure, it is possible to switch a plurality of temperature sensors to perform temperature control. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a front cross-sectional view of a substrate processing apparatus according to an embodiment of the present disclosure.

[0014] Figure 2 This is a schematic diagram of a substrate processing apparatus according to an embodiment of the present disclosure.

[0015] Figure 31 is a schematic diagram showing the migration of a wafer boat when loading a wafer boat in a substrate processing apparatus according to an embodiment of the present disclosure, and is a diagram showing a state in the process of the wafer boat ascending.

[0016] Figure 4 It is a diagram showing a hardware configuration of a controller in a substrate processing apparatus according to an embodiment of the present disclosure.

[0017] Figure 5 It is a diagram showing the hardware configuration of a temperature controller in a substrate processing apparatus according to an embodiment of the present disclosure.

[0018] Figure 6 This is a control block diagram of a temperature control system in a substrate processing apparatus according to an embodiment of the present disclosure.

[0019] Figure 7 middle, Figure 7 (A) is a diagram for explaining a substrate processing sequence performed in a substrate processing apparatus according to an embodiment of the present disclosure, and is a flowchart showing a substrate processing sequence. Figure 7 (B) is a diagram for explaining a substrate processing sequence performed in the substrate processing apparatus according to one embodiment of the present disclosure, and is a graph showing the temperature in each step of the processing sequence.

[0020] Figure 8 This is a flowchart showing a temperature control sequence performed in the substrate processing apparatus according to one embodiment of the present disclosure.

[0021] Fig. 9 This is a control block diagram of a modified example of the temperature control system in the substrate processing apparatus according to one embodiment of the present disclosure.

[0022] Fig.10 This is a flowchart showing a modified example of the temperature control sequence performed by the substrate processing apparatus according to one embodiment of the present disclosure.

[0023] Fig.11 middle, Fig.11 (A) is a diagram for explaining the effect of the substrate processing apparatus according to one embodiment of the present disclosure, and is a graph showing temperature changes when the temperature control in the furnace is always set to substrate temperature control. Fig.11 (B) is a diagram for explaining the effect of the substrate processing apparatus according to one embodiment of the present disclosure, and is a graph showing temperature changes when the temperature control in the furnace is switched from heater temperature control to substrate temperature control.

[0024] Fig.12 middle, Fig.12 (A) is a diagram for explaining the effect of the substrate processing apparatus according to one embodiment of the present disclosure, and is a graph showing temperature changes when the temperature control in the furnace is always set to heater temperature control. Fig.12(B) is a diagram for explaining the effect of the substrate processing apparatus according to one embodiment of the present disclosure, and is a graph showing temperature changes when the temperature control in the furnace is switched from heater temperature control to substrate temperature control.

[0025] Fig.13 middle, Fig.13 (A) is a diagram for explaining the effect of the substrate processing apparatus according to one embodiment of the present disclosure, and is a graph showing temperature changes when the temperature control in the furnace is switched from heater temperature control to substrate temperature control while setting the target temperature to be fixed. Fig.13 (B) is a diagram for explaining the effect of the substrate processing apparatus according to one embodiment of the present disclosure, and is a graph showing temperature changes when the target temperature is changed to switch the temperature control in the furnace from heater temperature control to substrate temperature control. DETAILED DESCRIPTION

[0026] Hereinafter, an embodiment of the present disclosure will be described with reference to the accompanying drawings. In addition, the drawings used in the following description are all schematic, and the relationship between the dimensions of the elements shown in the drawings, the ratio of the elements, etc. may not be consistent with the actual situation. In addition, the relationship between the dimensions of the elements, the ratio of the elements, etc. may not be consistent between multiple drawings. In addition, between multiple drawings, substantially the same elements are marked with the same figure numbers, and the description of each element is made in the drawing in which the element first appears, and its description is omitted in subsequent drawings unless it is particularly necessary.

[0027] like Figure 1 As shown, the substrate processing device 10 has a processing tube 11 as a reaction tube, and the processing tube 11 is composed of an outer tube 12 as an outer tube and an inner tube 13 as an inner tube, which are arranged concentrically with each other. The outer tube 12 uses quartz (SiO2) and is integrally formed into a cylindrical shape with a closed upper end and an open lower end. The inner tube 13 is formed into a cylindrical shape with upper and lower ends open. The hollow portion of the inner tube 13 forms a processing chamber 14 for carrying in a wafer boat 31 as a holder, and the lower end side (open space) of the inner tube 13 constitutes a furnace mouth portion (furnace mouth space) 15 for allowing the wafer boat 31 to enter and exit. As described later, the wafer boat 31 is configured to hold a plurality of substrates (hereinafter also referred to as wafers) 1 in a long array.

[0028] The lower end between the outer tube 12 and the inner tube 13 is sealed airtight by a manifold 16 as a furnace flange portion constructed in a substantially cylindrical shape. The manifold 16 is detachably mounted on the outer tube 12 and the inner tube 13, respectively, in order to replace the outer tube 12 and the inner tube 13. By supporting the manifold 16 on the housing 2 of the substrate processing apparatus 10, the processing tube 11 is vertically mounted. In the following drawings, the inner tube 13 may be omitted in the processing tube 11.

[0029] The exhaust path 17 is formed into a circular ring shape with a certain width through the gap between the outer tube 12 and the inner tube 13. Figure 1 As shown in FIG. 1 , one end of an exhaust pipe 18 is connected to the upper portion of the side wall of the manifold 16, and the exhaust pipe 18 is in a state of being communicated with the lowermost end of the exhaust path 17. An exhaust device 19 controlled by a pressure controller 21 is connected to the other end of the exhaust pipe 18, and a pressure sensor 20 is connected in the middle of the exhaust pipe 18. The pressure controller 21 is configured to perform feedback control on the exhaust device 19 based on the measurement result from the pressure sensor 20.

[0030] The sealing cover 25, which is a cover body that closes the lower end opening, contacts the manifold 16 from the lower side in the vertical direction. The cover body 25 is configured to be a disk shape having an outer diameter substantially equal to that of the manifold 16, and is lifted and lowered in the vertical direction by a boat elevator 26 protected by a boat cover 37 provided in the transfer chamber 3 of the housing 2. The boat elevator 26 is configured by a feed screw device and a bellows driven by a motor, and the motor 27 of the boat elevator 26 is controlled by a drive controller 28. A rotating shaft 30 is disposed on the center line of the cover body 25 and supported to rotate freely. The rotating shaft 30 is configured to be rotationally driven by a motor 29 controlled by the drive controller 28. A boat 31 is vertically supported at the upper end of the rotating shaft 30. In the present embodiment, the rotating shaft 30 and the motor 29 constitute a rotating mechanism.

[0031] A gas introduction pipe 22 is provided below the manifold 16 (in this embodiment, the cover 25) in a manner communicating with the furnace opening portion 15 of the inner tube 13, and a raw gas supply device, a reaction gas supply device, and an inert gas supply device (hereinafter referred to as a gas supply device) 23 are connected to the gas introduction pipe 22. The gas supply device 23 is configured to be controlled by a gas flow controller 24. The gas introduced from the gas introduction pipe 22 to the furnace opening portion 15 flows in the processing chamber 14 of the inner tube 13 and is discharged from the exhaust pipe 18 through the exhaust path 17.

[0032] The wafer boat 31 has a pair of end plates 32 and 33 at the top and bottom and three pillars (columns) 34 as holding members vertically erected therebetween, and a plurality of holding grooves 35 are engraved at equal intervals along the length direction on the three pillars 34. The holding grooves 35 engraved on the same layer of the three pillars 34 are open to face each other. The wafer boat 31 arranges and holds a plurality of substrates 1 in a horizontal and mutually aligned state by inserting the substrates 1 between the holding grooves 35 at the same level of the three pillars 34. In addition, by inserting the heat insulation board 120 between the holding grooves 39 at the same level of the three pillars 34, a plurality of heat insulation boards 120 are arranged and held in a horizontal and mutually aligned state.

[0033] That is, the wafer boat 31 is configured to separate a substrate processing area between the end plate 32 and the end plate 38 holding the plurality of substrates 1 and a heat insulation board area between the end plate 38 and the end plate 33 holding the plurality of heat insulation boards 120, and is configured to arrange the heat insulation board area below the substrate processing area. The heat insulation board 120 held between the end plate 38 and the end plate 33 constitutes the heat insulation part 36.

[0034] The rotating shaft 30 is configured to support the wafer boat 31 in a state of being lifted from the upper surface of the cover 25. The heat insulating portion 36 is provided at the furnace opening 15 and is configured to heat insulate the furnace opening 15. In addition, a motor 29 for rotating the wafer boat 31 is provided below the cover 25. The motor 29 has a hollow motor structure, and the rotating shaft 30 passes through the motor 29.

[0035] On the outside of the processing tube 11, the heater unit 40 as a heating part is arranged in a concentric circle and is set in a state supported by the shell 2. A heater thermocouple 65 as a temperature sensor is provided in the heating part 40, and the temperature controller 64 is configured to feedback control the heating part 40 based on the measurement result from the first temperature sensor 65. Thus, the heating part 40 is configured to heat the substrate 1 held in the substrate processing area of ​​the wafer boat 31. In addition, the details of the first temperature sensor 65 will be described later. In addition, the heating part 40 has a shell 41. The shell 41 uses stainless steel (SUS) and is formed into a cylindrical shape with a closed upper end and an open lower end, preferably a cylindrical shape. Here, the above-mentioned description of "in the heating part 40" not only includes "the heating part 40", but also includes the vicinity of the heating part 40 within its scope.

[0036] A heat insulating structure 42 is provided in the shell 41. The heat insulating structure 42 includes a side wall outer layer (hereinafter also referred to as an outer layer) arranged on the outside and a side wall inner layer (hereinafter also referred to as an inner layer) arranged on the inside, and is formed in a tubular shape, preferably in a cylindrical shape, and the side wall portion 43 of the cylindrical body is formed in a multi-layer structure.

[0037] Furthermore, the cooling air 90 is configured to flow through the gas supply flow path provided in the inner layer, and to be supplied to the space 75 via a supply path including the gas supply flow path.

[0038] like Figure 1 As shown, a top wall portion 80 as a top is covered on the upper end side of the side wall portion 43 of the heat insulating structure 42 in a manner of closing the space 75. An exhaust hole 81 is formed in an annular shape on the top wall portion 80 as a part of an exhaust path for exhausting the atmosphere of the space 75, and the upstream side end, that is, the lower end of the exhaust hole 81 communicates with the inner space 75. The downstream side end of the exhaust hole 81 is connected to the exhaust duct 82. Then, the cooling air 90 blown into the space 75 is discharged through the exhaust hole 81 and the exhaust duct 82.

[0039] like Figure 2 (exist Figure 2 In the figure, the processing substrate is marked as "1" and is omitted in the figure), the heater unit 40 can be divided and controlled into a plurality of areas in the longitudinal direction (in Figure 2 Since a heater is provided in each area in the manner of dividing the heater into five areas, a plurality of heaters are stacked. Furthermore, a first temperature sensor 65 for measuring the temperature of the heater is provided in each area.

[0040] The outer tube 12 is provided with an in-furnace thermocouple (third temperature sensor) 66 for measuring the temperature of the processing chamber 14. The in-furnace thermocouple 66 is a structure in which a number of thermocouples corresponding to the number of zones are accommodated in one quartz tube. Moreover, the temperature measurement point is set at a position opposite to the zone. Here, the above-mentioned description of "in the outer tube 12" includes not only "the outer tube 12", but also the vicinity of the outer tube 12.

[0041] The substrate thermocouple (second temperature sensor) 211 for measuring the temperature of the substrate 1 is provided on the wafer boat 31, and is configured to rotate together with the substrate 1 when the wafer boat 31 rotates and the substrate 1 rotates. The substrate thermocouple 211 is configured to include a temperature measuring portion 211b for measuring the temperature of the substrate and a cable 211c including a wire material constituting the temperature measuring portion. Here, the above description of "being provided on the wafer boat 31" includes not only "the wafer boat 31", but also the vicinity of the wafer boat 31.

[0042] The heater thermocouple 65 is an example of the first temperature sensor in the technology disclosed in the present invention. The substrate thermocouple 211 is an example of the second temperature sensor in the technology disclosed in the present invention. The furnace thermocouple 66 is an example of the third temperature sensor in the technology disclosed in the present invention. In addition, the first temperature sensor, the second temperature sensor, and the third temperature sensor are not limited to thermocouples as long as they can measure the temperature as an electrical signal, and can also be other sensors such as a temperature measuring resistor.

[0043] The rotating shaft 30 has a hole through which the cable 211c passes, and is vacuum-sealed using an airtight seal or the like, and the cable 211c is led out to the transmitter 221 outside the processing chamber 14 (for example, below the rotating shaft 30). The cable 211c is connected to the transmitter 221 under the sealing cover 25.

[0044] The transmitter 221 is fixed to the rotating shaft 30 and is configured to move together with the rotating shaft 30. The transmitter 221 digitally converts the electric signal (voltage) input from the substrate thermocouple 211 via the cable 211c, and transmits the electric signal by wireless transmission using radio waves.

[0045] There is a receiver 222 fixed to the housing 2 of the transfer chamber 3 under the cover 25, and there is a terminal (output terminal) 222a for receiving the signal sent by the transmitter 221 and outputting the received digital signal by serial communication, or a terminal (output terminal) 222b for converting the received digital signal into an analog signal such as 4-20mA and outputting it. The output signal terminal of the digital signal or analog signal is connected to the temperature display (not shown) or the temperature controller 64 by a cable 223, and the temperature data is input to the temperature controller 64. In addition, the receiver 222 is set in the transfer chamber 3, but it is not limited to this method. It can be arranged outside the transfer chamber 3, or it can be arranged at a position away from the substrate processing device 10.

[0046] Figure 3 This is a transition diagram showing the actions during wafer boat loading. Figure 3 FIG. 2 shows a substrate raising operation in a state where a plurality of substrates 1 are placed on a wafer boat 31 and a substrate thermocouple 211 is provided. Figure 3 In the figure, the processing substrate is marked as "1" and is omitted from the illustration.

[0047] When the substrate 1 is placed on the wafer boat 31 by the transfer device 125 , the entire wafer boat 31 is located in the transfer chamber 3 .

[0048] After the substrate 1 is loaded onto the wafer boat 31, Figure 3 As shown, the wafer boat 31 and the transmitter 221 are moved by the wafer boat elevator 26 (see Figure 1 ) and rise.

[0049] Thereafter, the cover 25 is brought into contact with and fixed to the manifold 16, and the wafer boat 31 is stored in the processing chamber 14. The position of the wafer boat 31 at this time is referred to as a closed position.

[0050] like Figure 4 As shown in the figure, the controller 200, which is a control computer as a control unit, has: a computer body 203, which includes a CPU (Central Processing Unit) 201 and a memory 202, etc.; a communication IF (Interface: Interface) 204 as a communication unit; a storage device 205 as a storage unit; and a display / input device 206 as an operation unit. That is, the controller 200 includes components as a general computer.

[0051] The CPU 201 constitutes the core of the operation unit, executes the control program stored in the storage device 205 as a hard disk, and executes the process (for example, the process for the process) recorded in the storage device 205 according to the instruction from the display / input device 206. In addition, as a recording medium for storing the action program of the CPU, ROM (Read Only Memory), EEPROM (Electrically Erasable Programmable Read Only Memory), flash memory, etc. can also be used. Here, the memory 202 as a temporary storage unit is used as the working area of ​​the CPU 201. In the embodiment of the present disclosure, the controller 200 is used as an example for explanation, but it is not limited to this, and it can be implemented using a conventional computer system. For example, the above-mentioned processing can also be performed by installing the program from a recording medium such as a floppy disk, CD-ROM, USB, etc. that stores the program for performing the above-mentioned processing to a general-purpose computer.

[0052] The communication unit 204 is electrically connected to the pressure controller 21 , the gas flow controller 24 , the drive controller 28 , and the temperature controller 64 (these may also be collectively referred to as sub-controllers). The controller 200 can exchange data related to the operation of each component with the sub-controllers via the communication unit 204 .

[0053] like Figure 5 As shown, the temperature controller 64 includes a control unit 64a, a communication IF 64b, a thermocouple input unit 64c, and a control output unit 64d.

[0054] The control unit 64a executes a control program to perform a control operation according to a temperature control algorithm described later using information acquired from the communication IF 64b and the thermocouple input unit 64c, and outputs the operation result to the control output unit 64d.

[0055] The communication interface 64 b has a wired IF for connecting to the controller 200 or the like as a host controller and a receiver 222 as a wireless IF for connecting to a transmitter 221 fixed to the wafer boat 31 .

[0056] The communication interface 64b receives information such as target temperature and control parameters from the controller 200, or sends control calculation results and temperature information. In addition, the communication interface 64b receives the position information of the wafer boat from the drive controller 28 of the wafer boat elevator 26. In addition, the communication interface 64b receives the temperature of the substrate thermocouple 211 via the transmitter 221 and the receiver 222.

[0057] The thermocouple input unit 64 c receives an electric signal corresponding to the temperature from the heater thermocouple 65 and the furnace thermocouple 66 , converts the signal into a digital signal, and outputs the digital signal to the control unit 64 a .

[0058] The control output unit 64 d outputs a heater control signal for performing temperature control of the heater unit 40 based on the calculation result received from the control unit 64 a .

[0059] In the following description, the temperature detected by the heater thermocouple 65 is referred to as the heater temperature, and the temperature control using the heater thermocouple 65 is referred to as the heater temperature control. In addition, the temperature detected by the substrate thermocouple 211 is referred to as the substrate temperature, and the temperature control using the substrate thermocouple 211 is referred to as the substrate temperature control. In addition, the temperature detected by the furnace thermocouple 66 is referred to as the furnace temperature, and the temperature control using the furnace thermocouple 66 is referred to as the furnace temperature control.

[0060] Next, use Figure 6 An example of a control block diagram of the temperature control system in this embodiment is described. Here, the temperature control system has: a first control mode for controlling the temperature of the processing chamber 14 based on the detected temperature of the heater thermocouple 65; a second control mode for controlling the temperature of the processing chamber 14 based on the detected temperature of the substrate thermocouple 211; and a switching unit configured to be able to switch between the first control mode and the second control mode so as to perform temperature control corresponding to the state of the wafer boat 31.

[0061] In addition, in the technology disclosed in the present invention, the state of the wafer boat 31 refers to the state during movement (moving state), the state during transfer, the state during conveying, the state during lifting and lowering, the state during loading, the state during unloading, the state during rising, the state during descending, and the state during rotation of the wafer boat 31, etc., all states of the wafer boat 31 in action and the state of the wafer boat 31 when it is stopped (stopped state).

[0062] The control block has a control mode in which the correction unit 1, the PID operation unit 1, the switching unit (input terminal A), and the PID operation unit 2 are connected in this order, and a control mode in which the correction unit 2, the switching unit (input terminal B), and the PID operation unit 2 are connected in this order. The wafer boat position information is input to the PID operation unit 1, the PID operation unit 2, and the switching unit.

[0063] The temperature controller 64 selects the input terminal of the switching unit according to the wafer position information including the state of the wafer boat 31. When the state of the wafer boat 31 is the stopped state, the wafer boat 31 is located at the closed position.

[0064] When the wafer boat 31 is in the closed position, the temperature controller 64 selects the input terminal "A" of the switching unit and performs PID control using the substrate temperature and the heater temperature as controlled variables. Here, the substrate temperature is the detected temperature detected by the substrate thermocouple 211, and the heater temperature is the detected temperature detected by the heater thermocouple 65.

[0065] The control when the input end of the switching unit is set to "A" is an example of the second control mode in the technology of the present invention. The second control mode is a control mode in which control is performed using at least the substrate thermocouple 211 of the heater thermocouple 65 and the substrate thermocouple 211.

[0066] When the wafer boat 31 is located at a position other than the closed position, the temperature controller 64 selects the input terminal “B” of the switching unit and performs PID control using only the heater temperature as a controlled variable.

[0067] The control when the input end of the switching unit is set to “B” is an example of the first control mode in the technology of the present invention. The first control mode is a control mode in which control is performed using only the heater thermocouple 65 of the heater thermocouple 65 and the substrate thermocouple 211 .

[0068] The correction unit 1 and the correction unit 2 correct the target temperature based on the difference between the target temperature when the furnace is controlled to have the same temperature and the heater temperature, the substrate temperature, and the like.

[0069] By switching the switching unit, the output of the switching unit jumps and generates discontinuous values. Therefore, the crystal boat position information is also input into the PID operation unit 1 and the PID operation unit 2. Through the so-called disturbance-free processing, integral stop processing, etc., smooth control can be performed before and after switching.

[0070] Next, use Figure 7 An example of a substrate processing sequence performed in a substrate processing apparatus is described. Figure 7 In each step S101 to S104 of the substrate processing sequence shown in (B), Figure 6 The operation of the temperature control system shown above will be described.

[0071] Step S101 (standby step) is a process for stabilizing the temperature in the furnace (processing chamber 14) at the standby temperature T0. In step S101, the substrate 1 has not yet been put into the furnace. That is, the wafer boat 31 is arranged outside the processing chamber 14. Therefore, the wafer boat 31 is not in the closed position, so the temperature controller 64 is configured to select the input terminal "B" of the switching part and perform temperature control in the first control mode.

[0072] Step S102 (wafer boat loading step) is a process of placing the substrate 1 held in the wafer boat 31 into the furnace. Since the temperature of the wafer boat 31 and the substrate 1 is lower than the standby temperature T0 at this moment, and the substrate 1 is placed into the furnace, the atmosphere outside the furnace (room temperature) is introduced into the furnace, so the temperature in the furnace is temporarily lower than the standby temperature T0. After that, through the control of the temperature controller 64, the temperature in the furnace stabilizes at the target temperature (in this case, the same as the standby temperature T0) again after a certain period of time. In this figure, the target temperature after placing the processed substrate into the furnace and the subsequent step S103 are illustrated as the same as step S101, but due to the requirements of step S103, the target temperature after placing it into the furnace may be different.

[0073] In step S102 (wafer boat loading step), the temperature controller 64 is configured to continue to perform temperature control in the first control mode described above. Furthermore, when the substrate 1 held in the wafer boat 31 is completely loaded into the furnace, that is, when the temperature controller 64 obtains the wafer boat position information that the wafer boat 31 is located in the closed position, the input terminal "A" of the switching unit is selected to switch from the first control mode to the second control mode to perform temperature control.

[0074] Then, the temperature controller 64 continues to perform temperature control in the second control mode to stabilize the temperature in the furnace at the target temperature T0. At this time, the period from the start of step S102 (wafer boat loading step) to the completion of the introduction of the substrate 1 into the furnace is referred to as the first period, and then the period in which the temperature in the furnace is stabilized after the substrate 1 is introduced into the furnace is referred to as the second period. During the second period, the wafer boat 31 is in a stopped state, but the substrate 1 can also be rotated together with the wafer boat 31 by a rotating mechanism not shown. That is, this is because, even if the wafer boat 31 is rotated, the wafer boat 31 only rotates on its own, and the situation in the closed position remains unchanged. In addition, the second period can also be subsequently incorporated into step S103.

[0075] Step S103 (processing step) is a process of maintaining the temperature in the furnace at the target temperature T0 and performing a predetermined process on the substrate 1. The temperature controller 64 continues to perform temperature control in the second control mode. At this time, even if the state of the wafer boat 31 is in motion (rotating), the wafer boat position information does not change in the closed position, so the temperature controller 64 does not switch and performs temperature control in the second control mode.

[0076] Step S104 (boat unloading step) is a process of extracting the processed substrate 1 from the furnace together with the boat 31. In step S104 (boat unloading step), the temperature controller 64 is configured to select the input terminal "B" of the switching unit and perform temperature control in the first control mode.

[0077] Specifically, when step S104 (wafer boat unloading step) starts, the temperature controller 64 obtains the wafer boat position information that the wafer boat 31 is not in the closed position, and switches the input terminal "A" of the switching part to the input terminal "B", thereby switching from the second control mode to the first control mode. In step S104 (wafer boat unloading step), temperature control is performed in the first control mode.

[0078] When unprocessed substrates 1 to be processed remain, the processed substrates 1 are withdrawn from the wafer boat 31 and replaced with unprocessed substrates 1 , and a series of processes of steps S101 to S104 are repeated.

[0079] These steps are configured to be performed after a stable state is obtained in which the temperature in the furnace is within a predetermined small temperature range relative to the target temperature and this state continues for a predetermined time or longer.

[0080] In this embodiment, during the execution of a process including a loading step, a step of processing the substrate 1, and a step of unloading, the switching unit is configured to be able to switch between the first control mode and the second control mode according to the state of the wafer boat 31, so that the temperature of the processing chamber 14 is controlled based on the first control mode in the loading step or the unloading step, and in addition, the temperature of the processing chamber 14 is controlled based on the second control mode in the step of processing the substrate.

[0081] In other words, in the present embodiment, the switching unit is configured to be able to switch the control mode, so that the temperature control of the processing chamber based on the first control mode is performed during the process of the wafer boat 31 moving from the outside of the processing chamber 14 toward the processing chamber 14, or during the process of the wafer boat 31 moving from the processing chamber 14 toward the outside of the processing chamber 14. On the other hand, the switching unit is configured to be able to switch the control mode, so that the temperature control of the processing chamber based on the second control mode is performed in a state (stop state) where the wafer boat 31 is arranged in the processing chamber 14. Further, the switching unit is configured to be able to switch the control mode, so that the temperature control of the processing chamber based on the second control mode is performed when the wafer boat 31 holding the substrate 1 is arranged in the processing chamber and the substrate 1 is processed at a predetermined processing temperature. Here, in this specification, the processing temperature refers to the temperature of the processing chamber 14.

[0082] Furthermore, in the loading step, the switching unit is configured to switch from the first control mode to the second control mode when the state of the wafer boat 31 changes from the moving state toward the processing chamber 14 to the stopped state. On the other hand, in the unloading step, the switching unit is configured to switch from the second control mode to the first control mode when the state of the wafer boat 31 changes from the state where the wafer boat 31 is arranged in the processing chamber 14 (stopped state) to the moving state from the processing chamber 14, that is, when the movement action of the wafer boat 31 to the outside of the processing chamber 14 is started.

[0083] In the present embodiment, when the state of the wafer boat 31 is, for example, the wafer boat 31 is moving toward the processing chamber 14, it is possible to switch to a control mode that does not use the substrate thermocouple 211. In addition, when the movement of the wafer boat 31 is completed, that is, the state of the wafer boat 31 is in a stopped state, it is possible to switch to a control mode that uses the substrate thermocouple 211. Therefore, the substrate thermocouple 211 will not be used for temperature control in a state where the position is inappropriate, and temperature control corresponding to the state of the wafer boat 31 can be performed.

[0084] In addition, the loading step includes a state in which the wafer boat 31 moves from the outside of the processing chamber 14 toward the processing chamber 14 (moving state), i.e., a first period, and a state in which the wafer boat 31 is configured in the processing chamber 14 (stop state), i.e., a second period. The temperature controller 64 is configured to perform temperature control in a first control mode in the first period and to perform temperature control in a second control mode in the second period.

[0085] Alternatively, the first period may be when the wafer boat 31 is being carried in, and the second period may be when the wafer boat 31 is stopped. Alternatively, the first period may be when the holder is ascending, and the second period may be when the holder is stopped.

[0086] Thus, the substrate thermocouple 211 is not used during the first period when the wafer boat 31 moves toward the processing chamber 14, and is used during the second period when the movement of the wafer boat 31 ends, that is, in a stopped state. Therefore, the substrate thermocouple 211 will not be used for temperature control in a state where the position of the substrate thermocouple 211 is inappropriate, and temperature control corresponding to the state of the wafer boat 31 can be performed.

[0087] Alternatively, the standby temperature detected by the first temperature sensor at the start of the loading step may be equal to or lower than the processing temperature set in the step of processing the substrate 1. In this case, the standby temperature may be set to a temperature maintained in a state where the substrate 1 is not arranged in the processing chamber 14.

[0088] Thus, in the temperature control of the process in a low-temperature area that is the same as or lower than the standby temperature maintained in a state where the substrate 1 is not configured, in the step (loading step) of moving the wafer boat 31 from the outside of the processing chamber 14 toward the processing chamber 14, when the movement of the wafer boat 31 is completed, the substrate thermocouple 211 can be used, so that it will not be used for temperature control in a state where the position of the substrate thermocouple 211 is inappropriate, and temperature control corresponding to the state of the wafer boat 31 can be performed.

[0089] Here, the controller 200 is configured to output an instruction to the temperature controller 64 to transfer to the next step when a predetermined time (e.g., step time) has passed. Here, a predetermined step time is set for each step (S101 to S104). In addition, the instruction will be described in detail later as a control switching signal.

[0090] Thus, for example, when a predetermined time (for example, step time) set in advance has elapsed since the start of the movement operation of the wafer boat 31 , the switching unit is configured to be able to switch from the first control mode to the second control mode.

[0091] Alternatively, the predetermined time may be, for example, a sum of a first period during which the wafer boat 31 is moved toward the processing chamber 14 and a second period during which the temperature of the processing chamber 14 is stabilized.

[0092] Thus, the substrate thermocouple 211 is not used in the step of moving the wafer boat 31 toward the processing chamber 14, and can be used in the step of completing the movement of the wafer boat 31, that is, the state of the wafer boat 31 is in a stopped state. Therefore, the substrate thermocouple 211 will not be used for temperature control in a state where the position of the substrate thermocouple 211 is inappropriate, and temperature control corresponding to the state of the wafer boat 31 can be performed.

[0093] Next, use Figure 8 An example of a temperature control sequence performed during execution of the above-mentioned substrate processing sequence will be described.

[0094] The temperature control sequence is executed at the timing of the temperature control cycle, starting from step S200 and ending at step S214.

[0095] In step S202 , the temperature controller 64 determines whether the wafer boat 31 is located at the closed position.

[0096] If it is determined in step S202 that the wafer boat 31 is in the closed position, the temperature controller 64 selects the input terminal "A" of the switch in step S204 and performs a control operation based on the second control mode in step S206. Thereafter, the temperature controller 64 outputs a heater control signal according to the control operation result in step S212, and the process ends.

[0097] If it is determined in step S202 that the wafer boat 31 is not in the closed position, the temperature controller 64 selects the input terminal "B" of the switching unit in step S208, and performs a control operation based on the first control mode in step S210. Thereafter, the temperature controller 64 outputs a heater control signal according to the control operation result in step S212, and the process ends.

[0098] The substrate processing device 10 of this embodiment is configured to be able to switch between a first control mode and a second control mode, so that, for example, when the wafer boat 31 is moving toward the processing chamber 14, the temperature of the furnace (processing chamber 14) is controlled based on the first control mode; for example, when the wafer boat 31 changes from a moving state toward the processing chamber 14 to a stopped state, the temperature of the furnace is controlled based on the second control mode.

[0099] In this embodiment, for example, when the processing chamber 14 is closed by a component (for example, the cover 25) that moves along with the wafer boat 31, the switching unit is configured to be able to switch from the first control mode to the second control mode. In addition, when the processing chamber 14 is closed by a component (for example, the cover 25) that moves along with the wafer boat 31, the switching unit is configured to be able to switch from the first control mode to the second control mode.

[0100] The switch unit is configured to switch from the first control mode to the second control mode when the wafer boat 31 completes its movement toward the processing chamber 14 , and to switch from the second control mode to the first control mode when the wafer boat 31 starts its movement from the processing chamber 14 .

[0101] In this way, the structure is such that temperature control is performed by not using the control mode of the substrate thermocouple 211 during the movement of the wafer boat 31. If the movement of the wafer boat 31 is completed and the state of the wafer boat 31 becomes a stopped state, temperature control is performed by using the control mode of the substrate thermocouple 211. Therefore, the substrate thermocouple 211 will not be used for temperature control when its position is inappropriate, and temperature control can be performed according to the state of the wafer boat 31.

[0102] use Fig.11 This embodiment is further described. Fig.11 As shown in (A), in the comparative example, the temperature of the wafer boat 31 at the start of wafer boat loading is lower than the temperature in the furnace. Therefore, when the temperature in the furnace is always controlled by the substrate thermocouple 211, the temperature of the processing chamber 14 may become too high compared to the target temperature.

[0103] In contrast, Fig.11 As shown in (B), in the present embodiment, when the wafer boat loading is completed and the wafer boat 31 reaches the closed position, the temperature control in the furnace is switched from the heater temperature control to the substrate temperature control, thereby reducing the temperature difference between the processing chamber 14 and the substrate thermocouple (second temperature sensor) 211 compared to the temperature of the heater thermocouple (first temperature sensor) 65 at the beginning of the wafer boat loading, thereby suppressing the degree to which the temperature of the processing chamber 14 is higher than the target temperature.

[0104] Furthermore, when the wafer boat 31 stops in the furnace, by using the substrate thermocouple 211 for temperature control, it is possible to shorten the time required for the temperature detected by the substrate thermocouple 211 (substrate temperature) to reach the target temperature.

[0105] <Modification>

[0106] Next, use Fig. 9 A modified example of the control block diagram of the temperature control system in the present embodiment is described. Here, the temperature control system has: a third control mode for controlling the temperature of the processing chamber 14 based on the detected temperature of the furnace thermocouple 66; a second control mode for controlling the temperature of the processing chamber 14 based on the detected temperature of the substrate thermocouple 211; and a switching unit configured to be able to switch between these second control mode and the third control mode so as to perform temperature control corresponding to the state of the wafer boat 31. The only difference from the present embodiment described above is that the first control mode is replaced by the third control mode, and even in such a case, the same effect as the present embodiment described above can be obtained.

[0107] The control block has: a second control mode, which is the same as the above-mentioned present embodiment in which the correction unit 1, the PID operation unit 1, the switching unit (input terminal A) and the PID operation unit 2 are connected in sequence; and a control mode in which the correction unit 2, the PID operation unit 3, the switching unit (input terminal B) and the PID operation unit 2 are connected in sequence.

[0108] The PID operation unit 1, the PID operation unit 2 and the switch unit receive the wafer boat position information or a control switch signal from the controller 200. Here, the control switch signal is a control signal for instructing the switch between the mode of using the substrate thermocouple 211 and the mode of not using the substrate thermocouple 211, including the control signal for instructing the above-mentioned step switch.

[0109] The temperature controller 64 selects the input terminal of the switching unit according to the wafer position information including the state of the wafer boat 31. When the state of the wafer boat 31 is the stopped state, the wafer boat 31 is located at the closed position.

[0110] When the wafer boat 31 is located at the closed position, the temperature controller 64 selects the input terminal “A” of the switching unit and performs PID control using the substrate temperature and the heater temperature as controlled variables.

[0111] When the wafer boat 31 is located at a position other than the closed position, the temperature controller 64 selects the input terminal “B” of the switching unit and performs PID control using the furnace temperature and the heater temperature as controlled variables. Here, the furnace temperature refers to the temperature detected by the furnace thermocouple 66 .

[0112] In this modification, the control when the input end of the switching unit is set to "B" is an example of the third control mode in the technology of the present invention. The third control mode is a control mode in which control is performed using at least one of the furnace thermocouple 66 and the heater thermocouple 65.

[0113] The correction unit 1 and the correction unit 2 correct the target temperature based on the difference between the target temperature when the furnace is controlled to have the same temperature and the heater temperature, the substrate temperature, and the like.

[0114] By switching the switching unit, the output of the switching unit jumps and generates discontinuous values. Therefore, the crystal boat position information is also input into the PID operation unit 1 and the PID operation unit 2. Through the so-called disturbance-free processing or integral stop processing, smooth control can be performed before and after switching.

[0115] In order to simplify the control calculation, the PID calculation unit 2 and the PID calculation unit 3 may be configured to perform the same calculation.

[0116] Next, use Fig.10 A modification of the temperature control sequence performed during execution of the above-described substrate processing sequence will be described.

[0117] The temperature control sequence is executed at the timing of the temperature control cycle, starting from step S300 and ending at step S314.

[0118] In step S302 , the temperature controller 64 determines whether the control switching signal received from the controller 200 is a control signal instructing a mode of using the substrate thermocouple 211 .

[0119] In step S302, when it is determined that the control switching signal is a control signal indicating a mode of using the substrate thermocouple 211, the temperature controller 64 transfers to the step S200 group, and uses the wafer boat position information including the state of the wafer boat 31 acquired together with the control switching signal, and if the wafer boat 31 is in the closed position, the processing of the above-described steps S202 to S206 is performed. Thereafter, in step S312, the temperature controller 64 outputs a heater control signal according to the control calculation result, and the processing ends.

[0120] When it is determined in step S302 that the control switching signal is a control signal indicating a mode in which the substrate thermocouple 211 is not used, the temperature controller 64 selects the input terminal "B" of the switching unit in step S308, and performs a control operation based on the third control mode in step S310. Thereafter, the temperature controller 64 outputs a heater control signal according to the control operation result in step S312, and the process ends.

[0121] Here, in step S302, the temperature controller 64 receives the instruction to transfer to the next step as a control switching signal from the controller 200, confirms the step information. Figure 7 In the substrate processing timing shown, if it is a transfer instruction from S101 to S102, or a transfer instruction from S103 to S104, or a transfer instruction from S104 to S101, it is determined to be a control signal indicating a mode not using the substrate thermocouple 211, and if it is a transfer instruction from S102 to S103, it is determined to be a control signal indicating a mode using the substrate thermocouple 211.

[0122] In this modified example, a third control mode is provided instead of the first control mode. In this third control mode, the temperature of the processing chamber 14 is controlled based on the detected temperature of a third temperature sensor disposed near the container including the processing chamber 14. When the wafer boat 31 is in the process of moving, for example, during the wafer boat loading process or the wafer boat unloading process, the temperature control of the processing chamber 14 based on the third control mode is performed. Specifically, the switching unit is configured to be able to switch to the third control mode so that the temperature control of the processing chamber 14 based on the third control mode is performed during the process of the wafer boat 31 moving from the outside of the processing chamber 14 to the processing chamber 14 or during the process of the wafer boat 31 moving from the processing chamber 14 to the outside of the processing chamber 14.

[0123] The third temperature sensor can be used instead of the first temperature sensor while the wafer boat 31 is moving toward the processing chamber 14 (from the start of the operation to a predetermined time), and the second temperature sensor can be used when the movement of the wafer boat 31 is completed, similarly to the present embodiment described above.

[0124] Therefore, according to this variation, similarly to the present embodiment, for example, in the step of moving the wafer boat 31 toward the processing chamber 14, the substrate thermocouple 211 is used when the movement of the wafer boat 31 is completed. Therefore, the substrate thermocouple 211 will not be used for temperature control in a state where the position of the substrate thermocouple 211 is inappropriate, and temperature control corresponding to the state of the wafer boat 31 can be performed.

[0125] Alternatively, the switch may be configured to switch from the third control mode to the second control mode when the wafer boat 31 is moved from the state where the wafer boat 31 is arranged in the processing chamber 14. Even in such a configuration, the same effects as those of the present embodiment described above can be obtained.

[0126] Next, use Fig.12 This modification example is described below. Fig.12As shown in (A), when the temperature control in the furnace is always set to the temperature control in the furnace, the temperature detected by the third temperature sensor 66 reaches the target temperature from the time when the wafer boat is loaded and the wafer boat 31 arrives at the closed position, but it takes time for the temperature of the substrate 1 (substrate temperature) to reach the temperature in the furnace (target temperature). In addition, although not shown in this figure, in the case where the temperature control in the furnace is always set to the heater temperature control, the temperature detected by the first temperature sensor 65 reaches the target temperature, but it takes time from the time when the wafer boat 31 arrives at the closed position until the temperature of the substrate 1 (substrate temperature) reaches the target temperature.

[0127] In contrast, Fig.12 As shown in (B), when the wafer boat loading is completed and the wafer boat 31 reaches the closed position, the temperature control in the furnace is switched from the furnace temperature control to the substrate temperature control, which is different from the case where the substrate temperature control is not performed ( Fig.12 Compared with (A)), the temperature of the substrate 1 can reach the target temperature in a short time.

[0128] The above-mentioned method and modification can be used in combination appropriately. The processing process and processing conditions at this time can be set to be the same as the processing process and processing conditions of the above-mentioned method and modification. In addition, as long as there is no special description in the specification, each element is not limited to one, and multiple elements can also exist.

[0129] <Other Implementation Methods>

[0130] The above specifically describes the embodiments of the present disclosure. However, the present disclosure is not limited to the above embodiments, and various changes can be made without departing from the main purpose thereof. For example, in the above embodiments, the detection temperature of the substrate thermocouple (second temperature sensor) 211 is set to the substrate temperature, but there is no need to interpret it in a particularly restrictive manner. The substrate temperature sometimes refers to the broad meaning of the temperature detected by a temperature sensor that is closest to the substrate among multiple temperature sensors and is arranged in the same processing space as the substrate.

[0131] For example, the control unit may be configured to have a control unit that can selectively execute either the third control mode or the second control mode. When the crystal boat 31 changes to a stopped state, the control unit switches from the third control mode to the second control mode and can set an intermediate target temperature at a predetermined ratio relative to the target temperature.

[0132] By adopting such a structure, even if there is a temperature deviation between the substrate thermocouple 211 and other temperature sensors generated when the control mode is switched, it is possible to suppress abnormal heating of the heater unit 40 due to the separation of the detected temperature of the temperature sensor and the substrate temperature, and it is possible to suppress overshoot caused by overheating of the heater unit 40 due to erroneous detection by the temperature sensor. And, as a result, it is expected that the useless power consumption of the heater unit 40 will be reduced.

[0133] In detail, Fig.13 As shown in (A), immediately after the temperature control in the furnace is switched from the furnace temperature control to the substrate temperature control, the deviation between the target temperature and the substrate temperature is large, so the furnace temperature temporarily becomes higher than the target temperature.

[0134] Therefore, if Fig.13 As shown in (B), in this embodiment, an intermediate target temperature is set by lowering the target temperature at a predetermined ratio relative to the target temperature for a certain period after the temperature control in the furnace is switched from the furnace temperature control to the substrate temperature control.

[0135] exist Fig.13 In the example shown in (B), just after the temperature control in the furnace is switched from the temperature control in the furnace to the substrate temperature control, the intermediate target temperature is set to be the same as the temperature detected by the substrate thermocouple 211, so that the intermediate target temperature changes in a manner that gradually approaches the target temperature from the set temperature.

[0136] Thus, the deviation between the target temperature and the substrate temperature after the temperature control in the furnace is switched from the furnace temperature control to the substrate temperature control can be reduced, and thus the overshoot of the furnace temperature can be suppressed.

[0137] In addition, for example, in the above-mentioned embodiment, an example of film formation using a batch-type vertical device, i.e., a substrate processing device, for processing multiple substrates at a time is described, but the present disclosure is not limited to this and can also be appropriately applied to the case of film formation using a single-chip substrate processing device for processing one substrate at a time.

[0138] In addition, the substrate processing device in the embodiment of the present disclosure can be applied not only to a semiconductor manufacturing device for manufacturing semiconductors, but also to a device for processing a glass substrate such as an LCD (Liquid Crystal Display) device. In addition, the processing of the substrate includes, for example, CVD, PVD, processing for forming an oxide film, a nitride film, processing for forming a film containing a metal, annealing, oxidation, nitridation, diffusion, etc. In addition, of course, it can also be applied to various substrate processing devices such as an exposure device, a coating device, a drying device, and a heating device.

[0139] The disclosure of Japanese Patent Application No. 2022-207375 filed on December 23, 2022 is incorporated herein by reference in its entirety. All documents, patent applications, and technical standards described in this specification are incorporated herein by reference to the same extent as if they were specifically and individually described.

[0140] Possibility of Industrial Application

[0141] The present disclosure can be applied to a substrate processing apparatus that includes a substrate holder on which a temperature sensor is mounted and processes a substrate held by the substrate holder.

[0142] Description of Reference Numerals

[0143] 1Substrate (wafer)

[0144] 14. Processing Room

[0145] 31 wafer boat (substrate holder)

[0146] 40 heater unit (heating part)

[0147] 64 Temperature Controller

[0148] 65 Heater thermocouple (first temperature sensor)

[0149] 211 substrate thermocouple (second temperature sensor).

Claims

1. A temperature control system, characterized in that: The temperature control system has: In a first control mode, the temperature of the processing chamber is controlled based on a detected temperature of a first temperature sensor disposed in the heating portion; a second control mode of controlling the temperature of the processing chamber based on a detected temperature of a second temperature sensor provided on a holder holding a substrate; as well as The switching unit is configured to be able to switch between the first control mode and the second control mode so that the temperature control is performed according to the state of the holder.

2. The temperature control system according to claim 1, characterized in that: The switching unit is configured to switch to the first control mode during a process in which the retaining member moves from the outside of the processing chamber toward the processing chamber, or during a process in which the retaining member moves from the processing chamber toward the outside of the processing chamber, so that the temperature of the processing chamber is controlled based on the first control mode.

3. The temperature control system according to claim 1, characterized in that: The switching unit is configured to switch from the first control mode to the second control mode when the holder changes from a moving state toward the processing chamber to a stopped state so as to perform temperature control of the processing chamber based on the second control mode.

4. The temperature control system according to claim 1, characterized in that: The switching unit is configured to switch from the first control mode to the second control mode so that the temperature of the processing chamber is controlled based on the second control mode in a state where the processing chamber is closed by a member that moves along with the holder.

5. The temperature control system according to claim 1, characterized in that: The switching unit is configured to switch from the first control mode to the second control mode when the movement of the holder toward the processing chamber is completed, and to switch from the second control mode to the first control mode when the movement of the holder from the processing chamber starts.

6. The temperature control system according to claim 1, characterized in that: The switching unit is configured to switch from the first control mode to the second control mode when a predetermined time set in advance has elapsed since the movement operation of the holder toward the processing chamber was started.

7. The temperature control system according to claim 6, characterized in that: The preset predetermined time is the step time of the process.

8. The temperature control system according to claim 6, characterized in that: The predetermined time set in advance is a sum of a first period during which the holder is moved toward the processing chamber and a second period during which the temperature of the processing chamber is stabilized.

9. The temperature control system according to claim 1, characterized in that: The switching unit is configured to switch from the second control mode to the first control mode at a timing when the holder is started to move to the outside of the processing chamber from a state where the holder is arranged in the processing chamber.

10. The temperature control system according to claim 7, characterized in that: The process comprises a loading step, a substrate processing step and an unloading step. The switching unit is configured to switch from the second control mode to the first control mode according to the state of the holder in the loading step or the unloading step so as to perform temperature control of the processing chamber based on the first control mode.

11. The temperature control system according to claim 10, characterized in that: The loading step includes a first period during which the holder moves toward the processing chamber and a second period during which the holder is disposed in the processing chamber, and the second period is a period during which the temperature of the processing chamber is stabilized.

12. The temperature control system according to claim 11, characterized in that: The first period is a state in which the holder is being carried in, and the second period is a state in which the holder is stopped.

13. The temperature control system according to claim 7, characterized in that: The process comprises a loading step, a substrate processing step and an unloading step. The switching unit is configured to switch from the first control mode to the second control mode according to the state of the holder in the step of processing the substrate so as to perform temperature control of the processing chamber based on the second control mode.

14. The temperature control system according to claim 10, characterized in that: The standby temperature detected by the first temperature sensor at the start of the loading step is configured to be equal to or lower than a processing temperature set in the step of processing the substrate.

15. The temperature control system according to claim 14, characterized in that: The standby temperature is a temperature maintained in a state where no substrate is arranged in the processing chamber.

16. The temperature control system according to claim 1, characterized in that: The temperature control system further includes: a third control mode for controlling the temperature of the processing chamber based on a detected temperature of a third temperature sensor disposed in the processing chamber; The switching unit is configured to switch to the third control mode during a process in which the retaining member moves from the outside of the processing chamber toward the processing chamber, or during a process in which the retaining member moves from the processing chamber toward the outside of the processing chamber, so that the temperature of the processing chamber is controlled based on the third control mode.

17. The temperature control system according to claim 1, characterized in that: The temperature control system further comprises: a control unit capable of selectively executing one of the first control mode and the second control mode; The control unit is configured to switch from the first control mode to the second control mode and set an intermediate target temperature at a predetermined ratio with respect to the target temperature when the holder changes to the stopped state.

18. A method for manufacturing a semiconductor device, characterized in that: The manufacturing method has the following features: A step of controlling the temperature of the processing chamber to a processing temperature by using the temperature control system according to any one of claims 1 to 17; and A step of processing the substrate disposed in the processing chamber while maintaining the processing temperature.

19. A processing device, characterized in that: The processing device is provided with a temperature control system, The temperature control system has: In a first control mode, the temperature of the processing chamber is controlled based on a detected temperature of a first temperature sensor disposed in the heating portion; a second control mode of controlling the temperature of the processing chamber based on a detected temperature of a second temperature sensor provided on a holder holding a substrate; as well as The switching unit is configured to be able to switch between the first control mode and the second control mode so that the temperature control is performed according to the state of the holder.

20. A program, characterized in that The program is executed by a processing device having a temperature control system, The temperature control system has: In a first control mode, the temperature of the processing chamber is controlled based on a detected temperature of a first temperature sensor disposed in the heating portion; a second control mode of controlling the temperature of the processing chamber based on a detected temperature of a second temperature sensor provided on a holder holding a substrate; as well as The switching unit is configured to be able to switch between the first control mode and the second control mode so that the temperature control is performed according to the state of the holder.

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