Display substrate, preparation method thereof and display device

By setting a light shielding structure in the insulating layer opening of the OLED display substrate to block light from emitting light from the light emitting device to the channel area of ​​the active layer, the problem of burning screen and line afterimage of the OLED panel when playing the same screen for a long time is solved, and the yield rate of the display product is improved.

CN119923985APending Publication Date: 2025-05-02BOE TECHNOLOGY GROUP CO LTD +1
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
CN202380010401.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2023-08-30
Publication Date
2025-05-02

AI Technical Summary

Technical Problem

Existing OLED panels are prone to burn-in problems and line afterimages when playing the same screen for a long time, resulting in a low yield rate of the display product.

Method used

A display substrate is designed, including a substrate, a driving circuit layer and a light emitting structure layer. The driving circuit layer includes a pixel driving circuit and an insulating layer. The light emitting structure includes a light emitting device. By providing a light shielding structure in the opening of the insulating layer, light of the light emitting device is blocked from emitting the channel region of the active layer.

Benefits of technology

It effectively improves the stability of the transistor threshold voltage, avoids the afterimage problem of the display substrate, and improves the yield rate of the display product.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN119923985A_ABST
    Figure CN119923985A_ABST
Patent Text Reader

Abstract

The invention discloses a display substrate, a preparation method thereof and a display device. The display substrate comprises a base (101), a driving circuit layer (102) and a light-emitting structure layer (105), the driving circuit layer (102) comprises at least one pixel driving circuit, the at least one pixel driving circuit comprises at least one transistor, the transistor at least comprises an active layer (206), and the driving circuit layer (102) further comprises at least one insulating layer located on the side, away from the substrate (101), of the active layer (206); the light-emitting structure layer (105) comprises at least one light-emitting device; the display substrate further comprises a shading structure (108), at least part of the shading structure (108) is located in an open hole formed in the at least one insulating layer, and the shading structure (108) is configured to prevent light rays emitted by the at least one light-emitting device from irradiating to a channel region (208) of the at least one active layer (206).
Need to check novelty before this filing date? Find Prior Art

Description

Display substrate and manufacturing method thereof, and display device

[0001] This article relates to but is not limited to the field of display technology, and in particular to a display substrate and a preparation method thereof, and a display device.

[0002] Organic Light-Emitting Diode (OLED) panel is an active light-emitting display device with the advantages of self-luminescence, wide viewing angle, high contrast, full-color display, light weight, thin thickness, low power consumption, high response speed, etc. It can also realize flexible display and is the display device with the most development potential.

[0003]

[0004] The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.

[0005] Embodiments of the present disclosure provide a display substrate and a method for manufacturing the same, and a display device.

[0006] On the one hand, an embodiment of the present disclosure provides a display substrate. The display substrate includes a substrate, a driving circuit layer located on one side of the substrate, and a light-emitting structure layer located on a side of the driving circuit layer away from the substrate; the driving circuit layer includes at least one pixel driving circuit, the at least one pixel driving circuit includes at least one transistor, the transistor includes at least an active layer, the driving circuit layer also includes at least one insulating layer located on a side of the active layer away from the substrate; the light-emitting structure layer includes at least one light-emitting device;

[0007] The display substrate further includes a light shielding structure, at least part of which is located in an opening provided in the at least one insulating layer, and the light shielding structure is configured to block light emitted by at least one of the light-emitting devices from irradiating a channel region of at least one of the active layers.

[0008] In an exemplary embodiment, the active layer further includes a first region and a second region located at opposite sides of the channel region; the light shielding structure is located between the active layer and the light emitting structure layer;

[0009] The shading structure includes at least one of a first shading portion and a second shading portion, wherein the orthographic projection of the first shading portion on the display substrate is located within the orthographic projection of the first area on the display substrate, and the orthographic projection of the second shading portion on the display substrate is located within the orthographic projection of the second area on the display substrate.

[0010] In an exemplary embodiment, the at least one insulating layer is provided with at least one opening, and the at least one opening includes at least one of a first opening and a second opening; the orthographic projection of the first opening on the display substrate is located within the orthographic projection of the first area on the display substrate, and the orthographic projection of the second opening on the display substrate is located within the orthographic projection of the second area on the display substrate;

[0011] Wherein, at least a portion of the first light shielding portion is located within the first opening, and at least a portion of the second light shielding portion is located within the second opening.

[0012] In an exemplary embodiment, a side of the first light shielding portion close to the active layer contacts the first region, and a side of the first light shielding portion away from the active layer is flush with a side of the at least one insulating layer away from the active layer.

[0013] In an exemplary embodiment, a side of the second light shielding portion close to the active layer contacts the second region, and a side of the second light shielding portion away from the active layer is flush with a side of the at least one insulating layer away from the active layer.

[0014] In an exemplary embodiment, the display substrate further includes a color filter structure layer, which is located between the driving circuit layer and the light-emitting structure layer; the color filter structure layer includes a shading layer and a color filter; wherein the shading layer and the color filter are arranged on the same layer.

[0015] In an exemplary embodiment, the light shielding layer includes a black matrix, and at least a portion of the light shielding structure and the black matrix are an integrated structure connected to each other.

[0016] In an exemplary embodiment, two adjacent color filters partially overlap to form an overlapping region, and in a direction perpendicular to the plane of the display substrate, the overlapping region is located between two adjacent light-emitting devices.

[0017] In an exemplary embodiment, the light emitting device includes a first electrode, an organic light emitting layer, and a second electrode which are stacked; the first electrode is closer to the substrate than the second electrode;

[0018] The first electrode is connected to the active layer via the connecting electrode, and a portion of the connecting electrode is reused as at least a portion of the light shielding structure.

[0019] In an exemplary embodiment, the connection electrode includes a first connection electrode and a second connection electrode which are stacked, and the first connection electrode is closer to the substrate than the second connection electrode; a first end of the first connection electrode is connected to the active layer, a second end of the first connection electrode is connected to the second connection electrode, and the second connection electrode is connected to the first electrode;

[0020] Part of the first connecting electrode and the second connecting electrode is reused as at least part of the light shielding structure.

[0021] In an exemplary embodiment, the connection electrode includes a first connection electrode and a second connection electrode which are stacked, and the first connection electrode is closer to the substrate than the second connection electrode; a first end of the first connection electrode is connected to the active layer, a second end of the first connection electrode is connected to the second connection electrode, and the second connection electrode is connected to the first electrode;

[0022] Wherein, the first connecting electrode is reused as at least a part of the light-shielding structure.

[0023] In an exemplary embodiment, the second connecting electrode and the first electrode are an integrated structure connected to each other.

[0024] In an exemplary embodiment, the light-emitting device includes a first electrode, an organic light-emitting layer, and a second electrode which are stacked; the first electrode is closer to the substrate than the second electrode; the light-emitting device further includes a pixel definition layer, the pixel definition layer is provided with a pixel opening, and the pixel opening exposes at least a portion of the surface of the first electrode;

[0025] Among them, at least part of the shading structure is an integrated structure connected to the pixel definition layer; or, at least part of the shading structure is an integrated structure connected to the organic light-emitting layer; or, at least part of the shading structure is an integrated structure connected to the second electrode.

[0026] In an exemplary embodiment, the light-shielding structure includes a light-shielding block; the driving circuit layer includes a first conductive layer located on one side of the substrate and a semiconductor layer located on a side of the first conductive layer away from the substrate; the first conductive layer includes at least one light-shielding block, the semiconductor layer includes at least one active layer, and the orthographic projection of at least one light-shielding block on the display substrate at least partially overlaps with the orthographic projection of at least one channel region of the active layer on the display substrate.

[0027] In an exemplary embodiment, an orthographic projection of the light shielding block on the display substrate includes an orthographic projection of a channel region of the active layer on the display substrate.

[0028] In an exemplary embodiment, the driving circuit layer includes a first conductive layer located on one side of the substrate, a semiconductor layer located on a side of the first conductive layer away from the substrate, and a second conductive layer located on a side of the semiconductor layer away from the substrate; the semiconductor layer includes at least one active layer, and the second conductive layer includes a gate of the transistor;

[0029] The orthographic projection of the gate on the display substrate at least partially overlaps with the orthographic projection of the channel region of the active layer on the display substrate.

[0030] In an exemplary embodiment, an orthographic projection of the gate on the display substrate includes an orthographic projection of a channel region of the active layer on the display substrate.

[0031] In an exemplary embodiment, the light-shielding structure includes a light-shielding block, the first conductive layer includes at least one of the light-shielding blocks, and the orthographic projection of the gate on the display substrate, the orthographic projection of the channel region of the active layer on the display substrate, and the orthographic projection of the light-shielding block on the display substrate are at least partially overlapped.

[0032] On the other hand, an embodiment of the present disclosure provides a display device, which includes the display substrate described in any of the above embodiments.

[0033] On the other hand, an embodiment of the present disclosure provides a method for preparing a display substrate, wherein the method is used to prepare the display substrate described in any of the above embodiments.

[0034] The display substrate provided in the embodiment of the present disclosure can use the set shading structure to block the light emitted from the light-emitting device to the channel region of the active layer, which can improve the problem of negative drift of the transistor threshold voltage, avoid the display substrate from producing afterimages, and improve the yield rate of display products.

[0035] Other aspects will be apparent upon reading and understanding the drawings and detailed description.

[0036] BRIEF DESCRIPTION OF THE DRAWINGS

[0037] The accompanying drawings are used to provide a further understanding of the technical solution of the present disclosure and constitute a part of the specification. Together with the embodiments of the present disclosure, they are used to explain the technical solution of the present disclosure and do not constitute a limitation on the technical solution of the present disclosure. The shape and size of one or more components in the accompanying drawings do not reflect the actual proportions and are only intended to illustrate the contents of the present disclosure.

[0038] FIG1 is a schematic diagram of a display product showing a line afterimage on a display screen;

[0039] FIG2 is a schematic structural diagram of a display device according to an embodiment of the present disclosure;

[0040] FIG3 is a schematic diagram of a planar structure of a display substrate according to an embodiment of the present disclosure;

[0041] FIG4 is a schematic cross-sectional structure diagram of a display substrate according to an embodiment of the present disclosure;

[0042] 5A to 5M are schematic diagrams of a manufacturing process of a display substrate according to an embodiment of the present disclosure;

[0043] FIG6 is a schematic cross-sectional view of a display substrate according to another embodiment of the present disclosure;

[0044] FIG7 is a schematic cross-sectional structure diagram of a display substrate according to another embodiment of the present disclosure;

[0045] FIG8 is a schematic cross-sectional structure diagram of a display substrate according to yet another embodiment of the present disclosure;

[0046] FIG9 is a schematic cross-sectional view of a display substrate according to another embodiment of the present disclosure;

[0047] 10A to 10F are schematic diagrams of a process for preparing a display substrate according to another embodiment of the present disclosure.

[0048] Figure markings: 101-substrate, 102-driving circuit layer, 201-first insulating layer, 202-second insulating layer, 203-third insulating layer, 204-fourth insulating layer, 205-light-shielding block, 206-active layer, 207-gate, 208-channel region, 209-first region, 210-second region, 211-first connecting electrode, 212-second connecting electrode; 103-color film structure layer, 301-black matrix, 302-color filter, 104-first encapsulation layer, 105-light-emitting structure layer, 501-anode, 502-organic light-emitting layer, 503-cathode, 504-pixel definition layer, 504-1 pixel opening, 106-second encapsulation layer, 107-cover layer, 108-light-shielding structure, 801-first light-shielding portion, 802-second light-shielding portion.

[0049] Details

[0050] The embodiments of the present disclosure will be described in detail below in conjunction with the accompanying drawings. The embodiments can be implemented in a plurality of different forms. A person skilled in the art can easily understand the fact that the method and content can be transformed into one or more forms without departing from the purpose and scope of the present disclosure. Therefore, the present disclosure should not be interpreted as being limited to the contents described in the following embodiments. In the absence of conflict, the embodiments in the present disclosure and the features in the embodiments can be combined with each other arbitrarily.

[0051] In the drawings, the size of one or more components, the thickness of a layer, or an area is sometimes exaggerated for the sake of clarity. Therefore, one embodiment of the present disclosure is not necessarily limited to the size, and the shape and size of one or more components in the drawings do not reflect the true proportion. In addition, the drawings schematically show ideal examples, and one embodiment of the present disclosure is not limited to the shapes or values ​​shown in the drawings.

[0052] The ordinal numbers such as "first", "second", and "third" in the present disclosure are provided to avoid confusion of constituent elements, rather than to limit the quantity. The "plurality" in the present disclosure includes two and more than two.

[0053] In the present disclosure, for the sake of convenience, the words and phrases indicating the orientation or positional relationship, such as "middle", "upper", "lower", "front", "back", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., are used to illustrate the positional relationship of the constituent elements with reference to the drawings. This is only for the convenience of describing the present specification and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation of the present disclosure. The positional relationship of the constituent elements is appropriately changed according to the direction in which the constituent elements are described. Therefore, it is not limited to the words and phrases described in the specification, and can be appropriately replaced according to the situation.

[0054] In the present disclosure, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate, or the internal communication of two elements. For ordinary technicians in this field, the meanings of the above terms in the present disclosure can be understood according to the circumstances.

[0055] In the present disclosure, "electrical connection" includes the case where components are connected together through an element having some electrical function. There is no particular limitation on the "element having some electrical function" as long as it can transmit electrical signals between connected components. Examples of "element having some electrical function" include not only electrodes and wiring, but also switching elements such as transistors, resistors, inductors, capacitors, and other elements having one or more functions.

[0056] In the present disclosure, a transistor refers to an element including at least three terminals: a gate electrode, a drain electrode, and a source electrode. A transistor has a channel region between a drain electrode (drain electrode terminal, drain region, or drain) and a source electrode (source electrode terminal, source region, or source), and current can flow through the drain electrode, the channel region, and the source electrode. In the present disclosure, a channel region refers to a region where current mainly flows.

[0057] In the present disclosure, the first electrode may be a drain electrode and the second electrode may be a source electrode, or the first electrode may be a source electrode and the second electrode may be a drain electrode. In the case of using transistors with opposite polarities or when the current direction changes during circuit operation, the functions of the "source electrode" and the "drain electrode" are sometimes interchanged. Therefore, in the present disclosure, the "source electrode" and the "drain electrode" may be interchanged.

[0058] In the present disclosure, "parallel" means a state where the angle formed by two straight lines is greater than -10° and less than 10°, and therefore, a state where the angle is greater than -5° and less than 5° may be included. In addition, "perpendicular" means a state where the angle formed by two straight lines is greater than 80° and less than 100°, and therefore, a state where the angle is greater than 85° and less than 95° may be included.

[0059] In the present disclosure, "film" and "layer" may be interchanged. For example, "conductive layer" may be replaced with "conductive film" in some cases. Similarly, "insulating film" may be replaced with "insulating layer" in some cases.

[0060] The terms “about” and “substantially” in the present disclosure refer to values ​​that are not strictly limited and allow for process and measurement errors.

[0061] The triangles, rectangles, trapezoids, pentagons or hexagons in the present disclosure are not in a strict sense, but may be approximate triangles, rectangles, trapezoids, pentagons or hexagons, etc. There may be some small deformations caused by tolerances, and there may be chamfers, arc edges and deformations.

[0062] One of the current development trends of large-size display products is to increase the brightness of display products, especially to increase the peak brightness of display products. OLED panels include multiple light-emitting units, each of which includes an organic light-emitting layer. The organic light-emitting layer emits light of corresponding colors under the drive of voltage. When the display product plays the same picture for a long time, screen burn-in will occur, which can also be called poor afterimage. The so-called afterimage is image retention, which is usually divided into surface afterimage and line afterimage. Therefore, in the product development process, afterimage testing is a very important evaluation item.

[0063] The inventors of the present application discovered during the afterimage test of the display product that the display product would have a partial brightening phenomenon as shown in FIG1, which can also be called line afterimage. In the actual production process, in order to improve the yield rate of the display product, it is necessary to analyze the causes of the line afterimage, and to improve or completely solve the line afterimage problem. Based on the analysis of the image, it is known that because part of the light emitted by the light-emitting unit of the display product irradiates the thin-film transistor, the threshold voltage (Vth) of the thin-film transistor has a negative drift, which causes the line afterimage phenomenon to appear on the display screen, resulting in a low yield rate of the display product.

[0064] Therefore, the embodiment of the present disclosure provides a display substrate. The display substrate includes a substrate, a driving circuit layer located on one side of the substrate, and a light-emitting structure layer located on a side of the driving circuit layer away from the substrate; the driving circuit layer includes at least one pixel driving circuit, the at least one pixel driving circuit includes at least one transistor, the transistor includes at least an active layer, and the driving circuit layer also includes at least one insulating layer located on a side of the active layer away from the substrate; the light-emitting structure layer includes at least one light-emitting device; the display substrate also includes a light-shielding structure, at least part of which is located in an opening provided in the at least one insulating layer, and the light-shielding structure is configured to block light emitted by at least one of the light-emitting devices from irradiating a channel region of at least one of the active layers.

[0065] The display substrate provided in the embodiment of the present disclosure can use the set shading structure to block the light emitted from the light-emitting device to the channel region of the active layer, which can improve or solve the problem of negative drift of the transistor threshold voltage, avoid the problem of afterimage of the display substrate, and improve the yield rate of the display product.

[0066] FIG2 is a schematic diagram of the structure of a display device according to an embodiment of the present disclosure. As shown in FIG2 , the OLED display device may include a timing controller, a data driver, a scan driver, and a pixel array. The timing controller is connected to the data driver and the scan driver, respectively. The data driver is connected to a plurality of data signal lines (D1 to Dn), respectively, and the scan driver is connected to a plurality of scan signal lines (S1 to Sm), respectively. The pixel array may include a plurality of sub-pixels Pxij, each sub-pixel Pxij may be connected to a corresponding data signal line and a corresponding scan signal line, and i and j may be natural numbers. At least one sub-pixel Pxij may include at least a circuit unit and a display unit, the circuit unit may include at least a pixel driving circuit, the pixel driving circuit is connected to the scan signal line and the data signal line, respectively, and the display unit may include at least a light-emitting device, and the light-emitting device is connected to the pixel driving circuit of the circuit unit. The sub-pixel Pxij may refer to a sub-pixel whose pixel driving circuit is connected to the i-th scan signal line and to the j-th data signal line.

[0067] In an exemplary embodiment, the timing controller may provide the grayscale value and control signal suitable for the specification of the data driver to the data driver, and may provide the clock signal, scan start signal, etc. suitable for the specification of the scan driver to the scan driver. The data driver may generate the data voltage to be provided to the data signal lines D1, D2, D3, ... and Dn using the grayscale value and control signal received from the timing controller. For example, the data driver may sample the grayscale value using the clock signal, and apply the data voltage corresponding to the grayscale value to the data signal lines D1 to Dn in units of pixel rows, and n may be a natural number. The scan driver may generate the scan signal to be provided to the scan signal lines S1, S2, S3, ... and Sm by receiving the clock signal, the scan start signal, etc. from the timing controller. For example, the scan driver may sequentially provide the scan signal with the on-level pulse to the scan signal lines S1 to Sm. For example, the scan driver may be constructed in the form of a shift register, and may generate the scan signal in a manner that the scan start signal provided in the form of the on-level pulse is sequentially transmitted to the next level circuit under the control of the clock signal, and m may be a natural number. In exemplary embodiments, a pixel array may be provided on a display substrate.

[0068] FIG3 is a schematic diagram of a planar structure of a display substrate of an embodiment of the present disclosure. As shown in FIG3, the display substrate may include a plurality of pixel units P arranged in a matrix manner, at least one pixel unit P may include a plurality of sub-pixels, for example, at least one of the plurality of pixel units P may include a first sub-pixel P1 emitting a first color light, a second sub-pixel P2 emitting a second color light, a third sub-pixel P3 emitting a third color light, and a fourth sub-pixel P4 emitting a fourth color light, and the four sub-pixels may each include a circuit unit and a light-emitting device, and the circuit unit may include a pixel driving circuit, the pixel driving circuit is respectively connected to a scanning signal line and a data signal line, and the pixel driving circuit is configured to receive a data voltage transmitted by a data signal line under the control of the scanning signal line, and output a corresponding current to the light-emitting device. The light-emitting device in each pixel unit is respectively connected to the pixel driving circuit of the sub-pixel in which it is located, and the light-emitting device is configured to emit light of corresponding brightness in response to the current output by the pixel driving circuit of the sub-pixel in which it is located.

[0069] In an exemplary embodiment, the first sub-pixel P1 may be a red sub-pixel (R) that emits red light, the second sub-pixel P2 may be a white sub-pixel (W) that emits white light, the third sub-pixel P3 may be a blue sub-pixel (B) that emits blue light, and the fourth sub-pixel P4 may be a green sub-pixel (G) that emits green light.

[0070] In an exemplary embodiment, the shape of the sub-pixel may be a rectangle, a diamond, a pentagon, or a hexagon. In an exemplary embodiment, four sub-pixels may be arranged in parallel horizontally to form a RWBG pixel arrangement. In another exemplary embodiment, the four sub-pixels may be arranged in a square, a diamond, or in parallel vertically, which is not limited in the present disclosure.

[0071] FIG4 is a schematic diagram of the cross-sectional structure of a display substrate of an embodiment of the present disclosure. As shown in FIG4 , the structure of four sub-pixels of the display substrate is illustrated. As shown in FIG4 , on a plane perpendicular to the display substrate, the display substrate includes a substrate 101, a driving circuit layer 102 disposed on one side of the substrate 101, a color filter structure layer 103 disposed on the side of the driving circuit layer 102 away from the substrate 101, a first encapsulation layer 104 disposed on the side of the color filter structure layer 103 away from the substrate 101, a light-emitting structure layer 105 disposed on the side of the first encapsulation layer 104 away from the substrate 101, a second encapsulation layer 106 disposed on the side of the light-emitting structure layer 105 away from the substrate 101, and a cover layer 107 disposed on the side of the second encapsulation layer 106 away from the substrate 101. The driving circuit layer 102 may include a plurality of circuit units, and the light-emitting structure layer 105 may include a plurality of light-emitting devices. In some possible implementations, the display substrate may include other film layers, which are not limited in the present disclosure.

[0072] In an exemplary embodiment, the substrate 101 may be a rigid substrate, or a flexible substrate, or a silicon wafer. In an exemplary embodiment, the rigid substrate may be made of materials such as glass or quartz, the flexible substrate may be made of materials such as polyimide (PI) or polyethylene terephthalate (PET), and the flexible substrate may be a single-layer structure, or may be a laminated structure consisting of an inorganic material layer and a flexible material layer, however, the embodiments of the present disclosure are not limited thereto.

[0073] In an exemplary embodiment, the driving circuit layer 102 of each sub-pixel may include at least one circuit unit. The circuit unit may include at least a pixel driving circuit composed of at least one transistor. In some examples, the pixel driving circuit may also include at least one storage capacitor. For example, the pixel driving circuit may be a 3T1C, 4T1C, 5T1C, 5T2C, 6T1C, 7T1C, 8T1C or 9T2C structure, where the number before T represents the number of transistors, and the number before C represents the number of storage capacitors. As shown in FIG. 4, the pixel driving circuit of the exemplary embodiment of the present disclosure only includes one transistor as an example. However, the embodiment of the present disclosure does not limit the structural form of the pixel driving circuit.

[0074] In an exemplary embodiment, as shown in FIG4 , the driving circuit layer 102 of each sub-pixel may include a first conductive layer disposed on one side of the substrate 101, a first insulating layer 201 disposed on a side of the first conductive layer away from the substrate 101, a semiconductor layer disposed on a side of the first insulating layer 201 away from the substrate 101, a second insulating layer 202 disposed on a side of the semiconductor layer away from the substrate 101, a second conductive layer disposed on a side of the second insulating layer 202 away from the substrate 101, a third insulating layer 203 disposed on a side of the second conductive layer away from the substrate 101, a third conductive layer disposed on a side of the third insulating layer 203 away from the substrate 101, and a fourth insulating layer 204 disposed on a side of the third conductive layer away from the substrate 101. In the embodiment of the present disclosure, the first insulating layer 201 may also be referred to as a buffer layer, the second insulating layer 202 may also be referred to as a gate insulating (GI) layer, the third insulating layer 203 may also be referred to as an interlayer insulating (ILD) layer, and the fourth insulating layer 204 may also be referred to as a planar (PLN) layer. As shown in FIG4 , the first conductive layer may include a single layer or multiple layers, for example, a transparent ITO layer and a metal layer, wherein the metal layer may be used as a signal routing, and a light shielding block 205 of a transistor. The semiconductor layer may include an active layer 206 of a transistor. The second conductive layer may include a gate 207 of a transistor. The third conductive layer may include a first connecting electrode 211, and the first connecting electrode 211 is configured to connect the light emitting device to a pixel driving circuit. As shown in FIG4 , the second end of the first connecting electrode 211 may be connected to the anode of the light emitting device, and the first end of the first connecting electrode 211 may be connected to the conductive active layer 206 of the transistor.

[0075] In an exemplary embodiment, the materials of the first conductive layer, the second conductive layer and the third conductive layer may be metal materials, such as any one or more of molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti). Alternatively, the materials of the first conductive layer, the second conductive layer and the third conductive layer may be alloy materials of metal materials such as molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti), such as aluminum-neodymium alloy (AlNd) or molybdenum-niobium alloy (MoNb). The first conductive layer, the second conductive layer and the third conductive layer may be a single-layer structure or a multi-layer composite structure, such as Ti / Al / Ti.

[0076] In an exemplary embodiment, the materials of the first insulating layer, the second insulating layer and the third insulating layer may be inorganic materials, and the inorganic materials may include any one or more of silicon oxynitride (SiOxNy), silicon nitride (SiNx) and silicon oxide (SiOx). The material of the fourth insulating layer may be an organic material, and the organic material may include one of polymers such as polyimide (PI), polyacrylate, polyphenylene sulfide, polyarylate, cellulose acetate propionate, polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyethersulfone resin (PES), polycarbonate (PC), polyetherimide (PEI), cycloolefin polymer (COP), silicone resin, polyarylate (PAR) or glass fiber reinforced plastic (FRP), or a mixture of multiple polymers.

[0077] In some possible exemplary embodiments, a passivation (PVX) layer may also be included between the third insulating layer and the fourth insulating layer. The material of the passivation layer may be an inorganic material. The inorganic material may include any one or more of silicon oxynitride (SiOxNy), silicon nitride (SiNx), and silicon oxide (SiOx).

[0078] In an exemplary embodiment, the first conductive layer may further include a data signal line, and the data signal line may be provided on the same layer as the light shielding block 205, which may simplify the preparation process of the display substrate, reduce the number of film layers of the display substrate, and reduce the preparation cost of the display substrate.

[0079] In an exemplary embodiment, the first conductive layer may further include a first plate of a storage capacitor, the second conductive layer may further include a second plate of a storage capacitor, and the first plate and the second plate may at least partially overlap in their orthographic projections on the display substrate. Alternatively, the second conductive layer may further include a first plate of a storage capacitor, the third conductive layer may further include a second plate of a storage capacitor, and so on.

[0080] In an exemplary embodiment, the material of the semiconductor layer may include an oxide semiconductor material. For example, the semiconductor layer may be made of one or more materials such as amorphous indium gallium zinc oxide (a-IGZO), zinc oxynitride (ZnON), indium zinc tin oxide (IZTO), etc. As shown in FIG. 4 , the orthographic projection of the active layer 206 on the substrate 101 and the orthographic projection of the light shielding block 205 on the substrate 101 may overlap at least partially. For example, the orthographic projection of the active layer 206 on the substrate 101 may include the orthographic projection of the light shielding block 205 on the substrate 101.

[0081] In an exemplary embodiment, as shown in FIG. 4 , the active layer 206 may include a channel region 208 and a first region 209 and a second region 210 located on opposite sides of the channel region 208. For example, in the process of preparing the display substrate, a portion of the active layer 206 may be subjected to a conductor treatment so that the first region 209 and the second region 210 are formed in the portion of the active layer. The first region 209 of the active layer 206 may be used as a first electrode of a transistor, which may be a source electrode or a drain electrode, and the second region 210 of the active layer 206 may be used as a second electrode of the transistor. However, the embodiments of the present disclosure do not limit the conductor process of the semiconductor layer.

[0082] In an exemplary embodiment, as shown in FIG4 , the channel region 208 of the active layer 206 and the orthographic projection of the light shielding block 205 on the substrate 101 may at least partially overlap. For example, the orthographic projection of the light shielding block 205 on the substrate 101 may include the orthographic projection of the channel region 208 on the substrate 101. By providing the light shielding block 205, the channel region 208 of the active layer 206 of the transistor can be shielded, and light can be prevented from being emitted from one side of the substrate to the transistor so as to affect the characteristics of the transistor and reduce the yield rate of the display product.

[0083] In an exemplary embodiment, as shown in Fig. 4, the first area 209 and the second area 210 may at least partially overlap with the orthographic projection of the light shielding block 205 on the substrate 101. For example, the orthographic projection of the first area 209 on the substrate 101 may be located within the orthographic projection of the light shielding block 205 on the substrate 101. For example, the orthographic projection of the second area 210 on the substrate 101 may be located within the orthographic projection of the light shielding block 205 on the substrate 101.

[0084] In an exemplary embodiment, as shown in FIG4 , the orthographic projection of the gate 207 on the substrate 101 may overlap with the orthographic projections of the active layer 206 and the light shielding block 205 of the semiconductor layer on the substrate 101. For example, the orthographic projection of the gate 207 on the substrate 101 may include the orthographic projection of the channel region 208 of the active layer 206 on the substrate 101. Alternatively, the orthographic projection of the gate 207 on the substrate 101 may overlap with the orthographic projection of the channel region 208 of the active layer 206 on the substrate 101. By setting the relationship between the orthographic projection of the gate 207 on the substrate 101 and the orthographic projection of the channel region 208 on the substrate 101, the gate 207 can be used to block at least part of the light directed to the channel region 208, which can improve the reliability of the active layer and thus extend the service life of the display substrate.

[0085] In an exemplary embodiment, the second conductive layer may further include a scan signal line. The scan signal line and the gate 207 of the transistor may be provided in the same layer, which may simplify the film structure of the display substrate and reduce the manufacturing cost of the display substrate. For example, the scan signal line and the gate 207 may be an integrated structure connected to each other. For example, the scan signal line may be an extended line, and the gate 207 may protrude from the scan signal line and on one side of the scan signal line extending in the direction in which the scan signal line extends.

[0086] In an exemplary embodiment, the color film structure layer 103 may include a light shielding layer and a color filter (CF) 302, wherein the light shielding layer may include a black matrix (BM) 301, or a portion where adjacent color filters (CF) 302 overlap. The light shielding layer can avoid crosstalk between light of different colors between adjacent sub-pixels. In the embodiment of the present disclosure, taking the light shielding layer including the black matrix (BM) 301 as an example, the black matrix 301 can be arranged around the color filter 302, and the color filter 302 is respectively arranged in the red sub-pixel, the white sub-pixel, the blue sub-pixel, and the green sub-pixel, filtering the white light emitted by the light-emitting device into red (R) light, white (W) light, blue (B) light, and green (G) light, and the black matrix 301 can be located between adjacent color filters 302. For example, the black matrix (BM) 301 and the color filter (CF) 302 can be arranged in the same layer, which can reduce the thickness of the display substrate.

[0087] In an exemplary embodiment, two adjacent color filters 302 partially overlap and form an overlapping region, and in a direction perpendicular to the plane of the display substrate, the overlapping region is located between two adjacent light-emitting devices. The overlapping region formed by the two adjacent color filters is used as a light shielding layer, which can simplify the preparation process of the display substrate as a whole and reduce the manufacturing cost.

[0088] In an exemplary embodiment, as shown in Fig. 4, at least one sub-pixel may include a light shielding structure 108. The light shielding structure 108 is configured to block light emitted by at least one light emitting device from irradiating the transistor. As shown in Fig. 4, four sub-pixels all include the light shielding structure 108 as an example.

[0089] In an exemplary embodiment, as shown in FIG4 , the light shielding structure 108 may include at least one of a first light shielding portion 801 and a second light shielding portion 802. The first light shielding portion 801 may be configured to block the light emitted by the light-emitting device included in the sub-pixel where the light shielding structure 108 is located from irradiating the transistor included in the sub-pixel where the light shielding structure 108 is located. The second light shielding portion 802 may be configured to block the light emitted by the light-emitting device included in the sub-pixel adjacent to the sub-pixel where the light shielding structure 108 is located from irradiating the transistor included in the sub-pixel where the light shielding structure 108 is located. As shown in FIG4 , taking the fourth sub-pixel P4 as an example, the first light shielding portion 801 may block the light emitted by the light-emitting device included in the fourth sub-pixel P4 from irradiating the transistor included in the fourth sub-pixel P4. The second light shielding portion 802 may block the light emitted by the light-emitting device included in the third sub-pixel P3 from irradiating the transistor included in the fourth sub-pixel P4.

[0090] In an exemplary embodiment, as shown in FIG4 , at least a portion of the light-shielding structure 108 and the black matrix 301 may be an integrated structure connected to each other, which can simplify the film structure of the display substrate, simplify the preparation process of the display substrate, and reduce the preparation cost of the display substrate. For example, the first light-shielding portion 801 and the black matrix 301 may be an integrated structure connected to each other. Alternatively, the second light-shielding portion 802 and the black matrix 301 may be an integrated structure connected to each other. Alternatively, the light-shielding structure 108 and the black matrix 301 may be an integrated structure connected to each other. In a possible exemplary embodiment, the light-shielding structure 108 and the black matrix 301 may be prepared by different processes, and the material of the light-shielding structure 108 and the material of the black matrix 301 may be different or the same.

[0091] In an exemplary embodiment, as shown in FIG. 4 , the orthographic projection of the black matrix 301 on the display substrate may include the orthographic projection of the shading structure 108 on the display substrate, which can avoid the shading structure occupying the area of ​​the sub-pixel light-emitting region and improve the aperture ratio of the display substrate.

[0092] In an exemplary embodiment, as shown in FIG4 , the fourth insulating layer 204 may be provided with at least one first opening K1, the first opening K1 may penetrate the third insulating layer 203 and the second insulating layer 202 and expose a portion of the surface of the first region 209, and at least a portion of the first light shielding portion 801 may be located within the first opening K1. For example, the first opening K1 may be a rectangular hole, a circular hole, a hexagonal hole, or the like.

[0093] In some possible exemplary embodiments, the fourth insulating layer 204 may be provided with at least one first opening K1, the first opening K1 does not penetrate the fourth insulating layer 204, or the first opening K1 penetrates the fourth insulating layer 204 and exposes a portion of the surface of the third insulating layer 203 on the side away from the substrate 101, at least a portion of the first light-shielding portion 801 may be located within the first opening K1, and the first light-shielding portion 801 may be in contact with a portion of the surface of the third insulating layer 203 on the side away from the substrate 101.

[0094] In some possible exemplary embodiments, the fourth insulating layer 204 may be provided with at least one first opening K1, the first opening K1 passes through the fourth insulating layer 204, and the first opening K1 does not pass through the third insulating layer 203, or the first opening K1 passes through the third insulating layer 203 and exposes a portion of the surface of the second insulating layer 202 away from the substrate 101, at least a portion of the first light-shielding portion 801 may be located within the first opening K1, and the first light-shielding portion 801 may be in contact with a portion of the surface of the second insulating layer 202 away from the substrate 101.

[0095] In some possible exemplary embodiments, the fourth insulating layer 204 may be provided with at least one first opening K1, the first opening K1 passes through the fourth insulating layer 204 and the third insulating layer 203, but does not pass through the second insulating layer 202, and at least a portion of the first shading portion 801 may be located within the first opening K1.

[0096] In an exemplary embodiment, as shown in FIG4 , the fourth insulating layer 204 may be provided with at least one second opening K2, the second opening K2 may penetrate the third insulating layer 203 and the second insulating layer 202 and expose a portion of the surface of the second region 210, and at least a portion of the second light shielding portion 802 may be located within the second opening K2. For example, the second opening K2 may be a rectangular hole, a circular hole, a hexagonal hole, etc. The shape of the second opening K2 may be the same as or different from that of the first opening K1.

[0097] In some possible exemplary embodiments, the fourth insulating layer 204 may be provided with at least one second opening K2, the second opening K2 does not penetrate the fourth insulating layer 204, or the second opening K2 penetrates the fourth insulating layer 204 and exposes a portion of the surface of the third insulating layer 203 on the side away from the substrate 101, at least a portion of the second light-shielding portion 802 may be located within the second opening K2, and the second light-shielding portion 802 may be in contact with a portion of the surface of the third insulating layer 203 on the side away from the substrate 101.

[0098] In some possible exemplary embodiments, the fourth insulating layer 204 may be provided with at least one second opening K2, the second opening K2 passes through the fourth insulating layer 204, and the second opening K2 does not pass through the third insulating layer 203, or the second opening K2 passes through the third insulating layer 203 and exposes a portion of the surface of the second insulating layer 202 away from the substrate 101, at least a portion of the second light-shielding portion 802 may be located within the second opening K2, and the second light-shielding portion 802 may be in contact with a portion of the surface of the second insulating layer 202 away from the substrate 101.

[0099] In some possible exemplary embodiments, the fourth insulating layer 204 may be provided with at least one second opening K2, the second opening K2 may penetrate the fourth insulating layer 204 and the third insulating layer 203, and does not penetrate the second insulating layer 202, and at least a portion of the second light-shielding portion 802 may be located within the second opening K2.

[0100] In an exemplary embodiment, as shown in FIG. 4 , the first encapsulation layer 104 may be encapsulated by a thin film (TFE) method to ensure that external water vapor cannot enter the driving circuit layer 102. The first encapsulation layer 104 may be a single film layer structure or a composite film layer structure of more than two layers. In some examples, the first encapsulation layer 104 may include a first encapsulation sublayer, a second encapsulation sublayer, and a third encapsulation sublayer stacked together, the first encapsulation sublayer and the third encapsulation sublayer may be made of inorganic materials, the second encapsulation sublayer may be made of organic materials, and the second encapsulation sublayer may be arranged between the first encapsulation sublayer and the third encapsulation sublayer.

[0101] In an exemplary embodiment, as shown in FIG. 4 , the light emitting structure layer 105 may include a plurality of light emitting devices, and the light emitting devices may be organic light emitting diodes (OLEDs), and at least one light emitting device may include a first electrode, an organic light emitting layer 502, and a second electrode that are stacked. The first electrode may be an anode or a cathode. In the embodiment of the present disclosure, the first electrode is an anode and the second electrode is a cathode. The anode 501 may be connected to the first electrode (first region 209) of the transistor through a connecting electrode, and the connecting electrode may include a second connecting electrode 212 and a first connecting electrode 211, the organic light emitting layer 502 is connected to the anode 501, and the cathode 503 is connected to the organic light emitting layer 502. The cathode 503 may be connected to a power line, and the organic light emitting layer 502 may emit light under the drive of the anode 501 and the cathode 503.

[0102] In an exemplary embodiment, the organic light emitting layer 502 may include a light emitting layer (EML for short), and any one or more of the following: a hole injection layer (HIL), a hole transport layer (HTL), an electron blocking layer (EBL), a hole blocking layer (HBL), an electron transport layer (ETL), and an electron injection layer (EIL). As shown in FIG. 4 , for a light emitting device emitting white light, the organic light emitting layers of all sub-pixels may be a common layer connected together.

[0103] In an exemplary embodiment, as shown in FIG. 4 , the second connection electrode 212 and the anode 501 may be an integrated structure connected to each other, which may simplify the film structure of the display substrate and reduce the manufacturing cost of the display substrate.

[0104] In an exemplary embodiment, as shown in FIG. 4 , the orthographic projection of the black matrix 301 on the display substrate may include the orthographic projection of the second connection electrode 212 and the first connection electrode 211 on the display substrate, which can improve the area utilization rate of the display substrate and the aperture ratio of the display substrate.

[0105] In an exemplary embodiment, the material of the anode 501 can be a transparent conductive material, such as indium tin oxide (ITO) or indium zinc oxide (IZO), which can avoid the loss of light emitted by the light-emitting device by the anode and improve the light utilization efficiency of the display substrate.

[0106] In an exemplary embodiment, as shown in Fig. 4, the light emitting device may further include a pixel definition layer 504. The pixel definition layer 504 may be provided with a pixel opening 504-1, and the pixel opening 504-1 exposes at least a portion of the surface of the anode 501. The material of the pixel definition layer 504 may be polyimide, acrylic or polyethylene terephthalate.

[0107] In some possible exemplary embodiments, at least a portion of the light shielding structure 108 and the pixel definition layer 504 may be an integrated structure connected to each other. For example, the second light shielding portion 802 and the pixel definition layer 504 may be an integrated structure connected to each other. Alternatively, at least a portion of the light shielding structure 108 and the organic light emitting layer 502 may be an integrated structure connected to each other. Alternatively, at least a portion of the light shielding structure 108 and the cathode 503 may be an integrated structure connected to each other.

[0108] In an exemplary embodiment, the shapes and areas of the pixel openings of different sub-pixels may be different.

[0109] In an exemplary embodiment, the shapes of the pixel openings of the four sub-pixels may be the same or different, and the areas of the pixel openings of the four sub-pixels may be the same or different.

[0110] In an exemplary embodiment, the shape of the pixel opening in the display substrate may include any one or more of the following: triangle, rectangle, trapezoid, parallelogram, pentagon, hexagon, circle and ellipse.

[0111] In an exemplary embodiment, the second encapsulation layer 106 may be encapsulated by a thin film (Thin Film Encapsulation, referred to as TFE) method, which can ensure that external water vapor cannot enter the light-emitting structure layer 105. The second encapsulation layer 106 may be a single film layer structure or a composite film layer structure of more than two layers. In some examples, the second encapsulation layer 106 may include a stacked fourth encapsulation sublayer, a fifth encapsulation sublayer, and a sixth encapsulation sublayer, the fourth encapsulation sublayer and the sixth encapsulation sublayer may be made of inorganic materials, the fifth encapsulation sublayer may be made of organic materials, and the fifth encapsulation sublayer may be arranged between the fourth encapsulation sublayer and the sixth encapsulation sublayer.

[0112] In an exemplary embodiment, the cover layer 107 may be made of glass, or a flexible plastic such as colorless polyimide.

[0113] The structure of the display substrate is illustrated below by the preparation process of the display substrate. The "patterning process" mentioned in the embodiment of the present disclosure includes the processes of coating photoresist, mask exposure, development, etching, stripping photoresist, etc. for metal materials, inorganic materials or transparent conductive materials, and includes the processes of coating organic materials, mask exposure and development, etc. for organic materials. Deposition can be any one or more of sputtering, evaporation, and chemical vapor deposition, coating can be any one or more of spraying, spin coating and inkjet printing, and etching can be any one or more of dry etching and wet etching, which are not limited in the present disclosure. "Thin film" refers to a layer of thin film made by deposition, coating or other processes of a certain material on a substrate. If the "thin film" does not require a patterning process during the entire production process, the "thin film" can also be called a "layer". If the "thin film" requires a patterning process during the entire production process, it is called a "thin film" before the patterning process and a "layer" after the patterning process. The "layer" after the patterning process contains at least one "pattern". In the embodiment of the present disclosure, the "same-layer structure" is the same layer located in the display substrate.

[0114] The preparation process of the display substrate may include the following steps. Taking the structure of the display substrate shown in FIG. 4 as an example, the preparation process of the display substrate is shown in FIG. 5A to FIG. 5M :

[0115] (11) Provide a substrate 101.

[0116] (12) Forming a first conductive layer pattern, forming the first conductive layer pattern may include: depositing a first conductive film on one side of the substrate 101, and patterning the first conductive film through a patterning process to form a first conductive layer pattern disposed on one side of the substrate 101. As shown in FIG5A, the first conductive layer may include a light shielding block 205 and a data signal line, etc.

[0117] (13) Forming a semiconductor layer pattern. The forming of the semiconductor layer pattern may include: sequentially depositing a first insulating film and a semiconductor film on the substrate 101 on which the aforementioned pattern is formed, and patterning the semiconductor film through a patterning process to form a first insulating layer 201 disposed on one side of the first conductive layer, and a semiconductor layer pattern disposed on one side of the first insulating layer 201. As shown in FIG. 5B , the semiconductor layer may include an active layer 206 of a transistor.

[0118] Forming the semiconductor layer pattern may further include conducting a portion of the active layer 206 so that the active layer 206 forms a first region 209 and a second region 210. For example, the first region 209 may be used as a first electrode of a transistor, and the second region 210 may be used as a second electrode of a transistor.

[0119] (14) forming a second conductive layer pattern. The forming of the second conductive layer pattern may include: sequentially depositing a second insulating film and a second conductive film on the substrate 101 on which the aforementioned pattern is formed, and patterning the second conductive film through a patterning process to form a second insulating film disposed on one side of the semiconductor layer and a second conductive layer pattern disposed on one side of the second insulating film. As shown in FIG. 5C , the second conductive layer may include a gate 207 of a transistor and a scanning signal line, etc.

[0120] (15) Forming a third insulating layer pattern, forming the third insulating layer pattern may include: depositing a third insulating film on the substrate 101 formed with the aforementioned pattern, patterning the third insulating film and the second insulating film through a patterning process to form a second insulating layer pattern arranged on one side of the semiconductor layer and a third insulating layer pattern arranged on one side of the second conductive layer, as shown in FIG5D, the third insulating layer 203 may be provided with at least one third opening K3, the third opening K3 may penetrate the third insulating layer 203 and the second insulating layer 202, and expose a portion of the surface of the first region 209. The third opening K3 is configured so that the first connection electrode formed subsequently is connected to the first region 209 of the transistor via the third opening. In an example, the orthographic projection of the second insulating layer 202 on the display substrate may include the orthographic projection of the substrate 101 on the display substrate, and in an example, the orthographic projection of the second insulating layer 202 on the display substrate overlaps with the orthographic projection of the substrate 101 on the display substrate. Alternatively, the orthographic projection of the second insulating layer 202 on the display substrate includes the orthographic projection of the active layer 206 on the display substrate, and the orthographic projection of the second insulating layer 202 on the display substrate is located within the range of the orthographic projection of the base 101 on the display substrate, and the orthographic projection of the second insulating layer 202 on the display substrate does not overlap with the orthographic projection of the base 101 on the display substrate.

[0121] (16) Forming a third conductive layer pattern, the forming of the third conductive layer pattern may include: depositing a third conductive film on the substrate 101 formed with the aforementioned pattern, and patterning the third conductive film through a patterning process to form a third conductive layer pattern disposed on one side of the third insulating layer 203, as shown in FIG5E, the third conductive layer may include a first connection electrode 211. At least a portion of the first connection electrode 211 may be located in the third opening K3, and the first connection electrode 211 may be connected to the first region 209 via the third opening K3.

[0122] (17) Forming a fourth insulating layer pattern, forming the fourth insulating layer pattern may include: depositing a fourth insulating film on the substrate 101 on which the aforementioned pattern is formed, and patterning the fourth insulating film through a patterning process to form a fourth insulating layer pattern located on one side of the third conductive layer, as shown in FIG5F. The fourth insulating layer 204 may include at least one of a first opening K1 and a second opening K2. The first opening K1 may penetrate the third insulating layer 203 and the second insulating layer 202 and expose a portion of the surface of the first region 209, and the first opening K1 is configured so that at least a portion of the first light shielding portion formed subsequently is located within the first opening K1. The second opening K2 may penetrate the third insulating layer 203 and the second insulating layer 202 and expose a portion of the surface of the second region 210, and the second opening K2 is configured so that at least a portion of the second light shielding portion formed subsequently is located within the second opening K2.

[0123] (18) Forming a color filter structure layer pattern. The forming of the color filter structure layer pattern may include: coating a black pigment or depositing a black chromium (Cr) film on the substrate 101 on which the aforementioned pattern is formed, and patterning the black pigment or the black chromium film using a patterning process to form a black matrix pattern located on one side of the fourth insulating layer 204, as shown in FIG. 5G .

[0124] At least part of the light shielding structure 108 and the black matrix 301 may be an integrated structure connected to each other, which can simplify the film structure of the display substrate and reduce the manufacturing cost of the display substrate. The light shielding structure 108 may include at least one of a first light shielding portion 801 and a second light shielding portion 802. For example, the first light shielding portion 801 and the black matrix 301 may be an integrated structure connected to each other. Alternatively, the second light shielding portion 802 and the black matrix 301 may be an integrated structure connected to each other.

[0125] Forming the color filter structure layer pattern may also include: on the substrate 101 formed with the aforementioned pattern, using photolithography or other methods to form a filter layer pattern located on one side of the fourth insulating layer 204, the filter layer pattern may include a plurality of color filters 302, as shown in FIG5G, the color filter 302 and the black matrix 301 are located on the same side of the fourth insulating layer 204, and the orthographic projection of the color filter 302 on the display substrate does not overlap with the orthographic projection of the black matrix 301 on the display substrate. The color filters 302 are respectively arranged in the red sub-pixel, the white sub-pixel, the blue sub-pixel and the green sub-pixel, filtering the white light emitted by the light-emitting device into red (R) light, white (W) light, blue (B) light and green (G) light.

[0126] (19) Forming a first encapsulation layer pattern, the forming of the first encapsulation layer pattern may include: depositing a fifth insulating film on the substrate 101 on which the aforementioned pattern is formed, and patterning the fifth insulating film through a patterning process to form a first encapsulation layer pattern located on one side of the color filter structure layer, as shown in FIG5H. The first encapsulation layer 104 may include at least one fourth via hole K4, the fourth via hole K4 may penetrate the first encapsulation layer 104, the black matrix 301 and the fourth insulating layer 204, and expose a portion of the surface of the first connection electrode 211, so that at least a portion of the second connection electrode formed subsequently is located in the fourth via hole K4, and the second connection electrode is connected to the first connection electrode 211 via the fourth via hole.

[0127] (20) Forming a fourth conductive layer pattern, the forming of the fourth conductive layer pattern may include: depositing a fourth conductive film on the substrate 101 formed with the aforementioned pattern, and patterning the fourth conductive film through a patterning process to form a fourth conductive layer pattern disposed on one side of the first encapsulation layer, as shown in FIG5I , the fourth conductive layer may include a second connection electrode 212 and an anode 501, etc. At least a portion of the second connection electrode 212 may be located in the fourth via hole K4 and connected to the first connection electrode 211. The fourth conductive layer pattern may include an anode located in the first sub-pixel, an anode located in the second sub-pixel, an anode located in the third sub-pixel, and an anode located in the fourth sub-pixel.

[0128] (21) forming a pixel definition layer pattern, the forming of the pixel definition layer pattern may include: coating a pixel definition film on the substrate 101 formed with the aforementioned pattern, and patterning the pixel definition film through a patterning process to form a pixel definition layer pattern, the pixel definition layer 504 may include at least a pixel opening 504-1 located in each sub-pixel, as shown in FIG5J. The pixel opening 504-1 exposes at least a portion of the surface of the anode 501, so that a portion of the subsequently formed organic light-emitting layer contacts the anode 501.

[0129] (22) Forming a fifth conductive layer pattern, forming the fifth conductive layer pattern may include: sequentially forming an organic light-emitting film and a fifth conductive film on the substrate 101 formed with the aforementioned pattern, patterning the fifth conductive film and the organic light-emitting film by a patterning process to form an organic light-emitting layer pattern and a fifth conductive layer pattern located on one side of the pixel definition layer 504, as shown in FIG5K. The fifth conductive layer may include a cathode 503, and the fifth conductive layer may also include a power line, etc. The stacked anode 501, the organic light-emitting layer 502, and the cathode 503 constitute a light-emitting device, the organic light-emitting layer 502 is connected to the anode 501, and the cathode 503 is connected to the organic light-emitting layer 502. The organic light-emitting layer 502 can emit light under the drive of the anode 501 and the cathode 503.

[0130] In an exemplary embodiment, the material of the fifth conductive layer may be a metal material, such as any one or more of molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti). Alternatively, the material of the fifth conductive layer may be an alloy material of metal materials such as molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti), such as aluminum-neodymium alloy (AlNd) or molybdenum-niobium alloy (MoNb). The fifth conductive layer may be a single-layer structure or a multi-layer composite structure, such as Ti / Al / Ti.

[0131] (23) Forming a second encapsulation layer pattern, the forming of the second encapsulation layer pattern may include: depositing a sixth insulating film on the substrate 101 on which the aforementioned pattern is formed, and patterning the sixth insulating film through a patterning process to form a second encapsulation layer pattern located on one side of the fifth conductive layer, as shown in FIG5L. The orthographic projection of the second encapsulation layer 106 on the display substrate may include the orthographic projection of the fifth conductive layer on the display substrate, which can prevent external water and oxygen from invading the light-emitting structure layer, and can improve the reliability of the display substrate.

[0132] (24) Forming a cover layer, which may include: preparing a cover layer 107 on the substrate 101 having the aforementioned pattern, as shown in FIG5M. The cover layer 107 may be made of glass, or a plastic-type colorless polyimide with flexible properties.

[0133] FIG6 is a schematic diagram of the cross-sectional structure of a display substrate of another embodiment of the present disclosure. As shown in FIG6, on a plane perpendicular to the display substrate, each sub-pixel in the display substrate may include a substrate 101, a driving circuit layer 102 disposed on one side of the substrate 101, a color filter structure layer 103 disposed on the side of the driving circuit layer 102 away from the substrate 101, a first encapsulation layer 104 disposed on the side of the color filter structure layer 103 away from the substrate 101, a light-emitting structure layer 105 disposed on the side of the first encapsulation layer 104 away from the substrate 101, a second encapsulation layer 106 disposed on the side of the light-emitting structure layer 105 away from the substrate 101, and a cover layer 107 disposed on the side of the second encapsulation layer 106 away from the substrate 101. The light-emitting structure layer 105 may include a plurality of light-emitting devices. The main difference between the display substrate shown in FIG6 and the display substrate shown in FIG4 is that a portion of the first connection electrode 211 and the second connection electrode 212 are reused as at least a portion of the light-shielding structure 108. In the structure where the shading structure 108 includes the first shading portion 801 and the second shading portion 802, the first connection electrode 211 and the second connection electrode 212 can be reused as the first shading portion 801, which can optimize the layout of the display substrate and make the overall design structure of the display substrate more compact. In some possible examples, in the structure where the shading structure 108 includes the first shading portion 801 and the second shading portion 802, the first connection electrode 211 and the second connection electrode 212 can be reused as the second shading portion 802. In some possible examples, in the structure where the shading structure 108 includes only the first shading portion 801 or only the second shading portion 802, the first connection electrode 211 and the second connection electrode 212 can be reused as the shading structure 108.

[0134] In an exemplary embodiment, the material of the first connection electrode 211 and the second connection electrode 212 may be a metal material, such as any one or more of molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti). Alternatively, the material of the first connection electrode 211 and the second connection electrode 212 may be an alloy material of metal materials such as molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti), such as aluminum-neodymium alloy (AlNd) or molybdenum-niobium alloy (MoNb). The first connection electrode 211 and the second connection electrode 212 may be a single-layer structure or a multi-layer composite structure, such as Ti / Al / Ti.

[0135] In an exemplary embodiment, the second connection electrode 212 and the anode 501 of the light emitting device are not an integral structure connected to each other. The material of the anode 501 can be a transparent conductive material, such as indium tin oxide (ITO) or indium zinc oxide (IZO), which can avoid the anode from losing or blocking the light emitted by the light emitting device, and can improve the light use efficiency of the display substrate.

[0136] FIG7 is a schematic diagram of the cross-sectional structure of a display substrate of another embodiment of the present disclosure. As shown in FIG7, on a plane perpendicular to the display substrate, each sub-pixel in the display substrate may include a substrate 101, a driving circuit layer 102 disposed on one side of the substrate 101, a color filter structure layer 103 disposed on the side of the driving circuit layer 102 away from the substrate 101, a first encapsulation layer 104 disposed on the side of the color filter structure layer 103 away from the substrate 101, a light-emitting structure layer 105 disposed on the side of the first encapsulation layer 104 away from the substrate 101, a second encapsulation layer 106 disposed on the side of the light-emitting structure layer 105 away from the substrate 101, and a cover layer 107 disposed on the side of the second encapsulation layer 106 away from the substrate 101. The light-emitting structure layer 105 may include a plurality of light-emitting devices. The main difference between the display substrate shown in FIG7 and the display substrate shown in FIG4 is that the first connection electrode 211 can be reused as at least part of the light-shielding structure 108. In the structure where the shading structure 108 includes the first shading portion 801 and the second shading portion 802, the first connection electrode 211 can be reused as the first shading portion 801, which can optimize the layout of the display substrate and make the overall design structure of the display substrate more compact. In some possible examples, in the structure where the shading structure 108 includes the first shading portion 801 and the second shading portion 802, the first connection electrode 211 can be reused as the second shading portion 802. In some possible examples, in the structure where the shading structure 108 includes only the first shading portion 801 or only the second shading portion 802, the first connection electrode 211 can be reused as the shading structure 108.

[0137] In some possible exemplary embodiments, the surface of the first connecting electrode 211 away from the substrate 101 can be flush with the surface of the fourth insulating layer 204 away from the substrate 101, or the surface of the first connecting electrode 211 away from the substrate 101 is further away from the substrate 101 than the surface of the fourth insulating layer 204 away from the substrate 101, which can increase the shading area of ​​the first connecting electrode and shorten the dimension of the second connecting electrode along the thickness direction of the display substrate, which can also be called the depth, and improve the connection reliability of the second connecting electrode.

[0138] In an exemplary embodiment, the material of the first connection electrode 211 may be a metal material, such as any one or more of molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti). Alternatively, the material of the first connection electrode 211 may be an alloy material of metal materials such as molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti), such as aluminum-neodymium alloy (AlNd) or molybdenum-niobium alloy (MoNb). The first connection electrode 211 may be a single-layer structure or a multi-layer composite structure, such as Ti / Al / Ti.

[0139] In an exemplary embodiment, the second connection electrode 212 and the anode 501 of the light emitting device may be an integrated structure connected to each other. The materials of the second connection electrode 212 and the anode 501 may be transparent conductive materials, such as indium tin oxide (ITO) or indium zinc oxide (IZO), etc., which can avoid the anode from losing or blocking the light emitted by the light emitting device, and can improve the light use efficiency of the display substrate.

[0140] FIG8 is a schematic diagram of the cross-sectional structure of a display substrate of another embodiment of the present disclosure. As shown in FIG8, on a plane perpendicular to the display substrate, each sub-pixel in the display substrate may include a substrate 101, a driving circuit layer 102 disposed on one side of the substrate 101, a color filter structure layer 103 disposed on the side of the driving circuit layer 102 away from the substrate 101, a first encapsulation layer 104 disposed on the side of the color filter structure layer 103 away from the substrate 101, a light-emitting structure layer 105 disposed on the side of the first encapsulation layer 104 away from the substrate 101, a second encapsulation layer 106 disposed on the side of the light-emitting structure layer 105 away from the substrate 101, and a cover layer 107 disposed on the side of the second encapsulation layer 106 away from the substrate 101. The light-emitting structure layer 105 may include a plurality of light-emitting devices. The main difference between the display substrate shown in FIG8 and the display substrate shown in FIG4 is that the shading structure 108 and the black matrix 301 are not an integral structure connected to each other, and the material of the shading structure 108 and the material of the black matrix 301 may be the same or different. As shown in FIG. 8 , the surface of the light shielding structure 108 away from the substrate 101 may be flush with the surface of the fourth insulating layer 204 away from the substrate 101 .

[0141] FIG9 is a schematic diagram of a cross-sectional structure of a display substrate of another embodiment of the present disclosure. As shown in FIG9 , on a plane perpendicular to the display substrate, each sub-pixel in the display substrate may include a substrate 101, a driving circuit layer 102 disposed on one side of the substrate 101, a color filter structure layer 103 disposed on the side of the driving circuit layer 102 away from the substrate 101, a first encapsulation layer 104 disposed on the side of the color filter structure layer 103 away from the substrate 101, a light emitting structure layer 105 disposed on the side of the first encapsulation layer 104 away from the substrate 101, a second encapsulation layer 106 disposed on the side of the light emitting structure layer 105 away from the substrate 101, and a cover layer 107 disposed on the side of the second encapsulation layer 106 away from the substrate 101. The light emitting structure layer 105 may include a plurality of light emitting devices. The display substrate shown in FIG9 is mainly different from the display substrate shown in FIG4 above in that the light shielding structure 108 and the black matrix 301 are not an integral structure connected to each other, and the material of the light shielding structure 108 and the material of the black matrix 301 may be the same or different. As shown in Fig. 9, the surface of the light shielding structure 108 away from the substrate 101 is closer to the substrate 101 than the surface of the fourth insulating layer 204 away from the substrate 101. For example, the surface of the light shielding structure 108 away from the substrate 101 can be flush with the surface of the third insulating layer 203 away from the substrate 101. Alternatively, the surface of the light shielding structure 108 away from the substrate 101 can be flush with the surface of the second insulating layer 202 away from the substrate 101, etc.

[0142] The preparation process of the display substrate may include the following steps. Taking the structure of the display substrate shown in FIG. 9 as an example, the preparation process of the display substrate is shown in FIGS. 10A to 10F:

[0143] (11) Provide a substrate 101 and sequentially form a first conductive layer pattern, a first insulating layer pattern, a semiconductor layer pattern, a second insulating film and a second conductive layer pattern on one side of the substrate 101, as shown in FIG10A. The first conductive layer may include a light shielding block 205 and a data signal line, etc. The semiconductor layer may include an active layer 206 of a transistor. Forming the semiconductor layer pattern may also include performing a conductor treatment on a part of the active layer 206 so that the part of the active layer 206 forms a first region 209 and a second region 210, respectively. The first region 209 of the active layer 206 may be used as a first electrode of the transistor, and the second region 210 of the active layer 206 may be used as a second electrode of the transistor. The second conductive layer may include a gate 207 of the transistor and a scanning signal line, etc.

[0144] (12) Forming a third insulating layer pattern, forming the third insulating layer pattern may include: depositing a third insulating film on the substrate 101 formed with the aforementioned pattern, patterning the third insulating film and the second insulating film by a patterning process to form a second insulating layer pattern arranged on one side of the semiconductor layer and a third insulating layer pattern arranged on one side of the second conductive layer, as shown in FIG10B , the third insulating layer 203 may be provided with at least one third opening K3, the third opening K3 penetrates the third insulating layer 203 and the second insulating layer 202, and exposes a portion of the surface of the first region 209. The third insulating layer 203 may be provided with at least one fifth opening K5 and a sixth opening K6, the fifth opening K5 and the sixth opening K6 may both penetrate the third insulating layer 203 and the second insulating layer 202, the fifth opening K5 may allow at least a portion of the first light shielding portion formed subsequently to be located within the fifth opening K5, and the sixth opening K6 may allow at least a portion of the second light shielding portion formed subsequently to be located within the sixth opening K6.

[0145] (13) Forming a third conductive layer pattern, forming the third conductive layer pattern may include: depositing a third conductive film on the substrate 101 formed with the aforementioned pattern, and patterning the third conductive film through a patterning process to form a third conductive layer pattern disposed on one side of the third insulating layer 203, as shown in FIG10C, the third conductive layer may include a first connection electrode 211. The first connection electrode 211 may be connected to the first region 209 via the third opening K3.

[0146] (14) forming a light shielding structure layer pattern, the forming of the light shielding structure layer pattern may include: depositing a light shielding film on the substrate 101 formed with the aforementioned pattern, patterning the light shielding film through a patterning process to form a light shielding structure layer pattern arranged on one side of the third conductive layer, as shown in FIG10D , the light shielding structure layer includes a light shielding structure 108, and the light shielding structure 108 may include at least one of a first light shielding portion 801 and a second light shielding portion 802. FIG10D shows that the light shielding structure 108 includes a first light shielding portion 801 and a second light shielding portion 802, at least a portion of the first light shielding portion 801 may be located within the fifth opening K5, and at least a portion of the second light shielding portion 802 may be located within the sixth opening K6.

[0147] In an exemplary embodiment, the material of the light shielding structure 108 may be a metal material, such as any one or more of molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti). However, the present disclosure does not limit the material used for the light shielding structure.

[0148] (15) Forming a fourth insulating layer pattern. Forming the fourth insulating layer pattern may include: depositing a fourth insulating film on the substrate 101 on which the aforementioned pattern is formed, and patterning the fourth insulating film through a patterning process to form a fourth insulating layer pattern located on one side of the third conductive layer, as shown in FIG. 10E .

[0149] (16) Forming a color filter structure layer pattern. The forming of the color filter structure layer pattern may include: coating a black pigment or depositing a black chromium (Cr) film on the substrate 101 on which the aforementioned pattern is formed, and patterning the black pigment or the black chromium film using a patterning process to form a black matrix pattern located on one side of the fourth insulating layer 204, as shown in FIG. 10F.

[0150] Forming the color filter structure layer pattern may also include: on the substrate 101 formed with the aforementioned pattern, using photolithography or other methods to form a filter layer pattern located on one side of the fourth insulating layer 204, the filter layer pattern may include a plurality of color filters 302, as shown in FIG10F, the color filter 302 and the black matrix 301 are located on the same side of the fourth insulating layer 204, and the orthographic projection of the color filter 302 on the display substrate does not overlap with the orthographic projection of the black matrix 301 on the display substrate. The color filters 302 are respectively arranged in the red sub-pixel, the white sub-pixel, the blue sub-pixel and the green sub-pixel, filtering the white light emitted by the light-emitting device into red (R) light, white (W) light, blue (B) light and green (G) light.

[0151] The subsequent preparation process of the display substrate can refer to the above-mentioned embodiment. In some possible embodiments, the order of (13) forming the third conductive layer pattern and (14) forming the light shielding structure layer pattern in the above-mentioned preparation process can be interchanged.

[0152] The present disclosure also provides a display device, which includes the display substrate shown in any of the above embodiments. The display device can be any product or component with display function, such as a mobile phone, tablet computer, television, monitor, notebook computer, digital photo frame, navigator, etc.

[0153] The disclosed embodiment also provides a method for preparing a display substrate. By setting a light shielding structure in the display substrate, the afterimage problem can be improved and the yield rate of the display substrate can be improved. The disclosed embodiment can be implemented by using existing mature preparation equipment, with little improvement on the existing process, simple preparation process, low production cost, high production precision, and good application prospects.

[0154] Although the embodiments disclosed in the present invention are as above, the contents described are only embodiments adopted for facilitating understanding of the present invention and are not intended to limit the present invention. It should be noted that the above embodiments or embodiments are merely exemplary and not restrictive. Therefore, the present disclosure is not limited to the contents specifically shown and described herein. Various modifications, substitutions or omissions may be made to the forms and details of implementation without departing from the scope of the present disclosure.

Claims

A display substrate comprises a base, a driving circuit layer located on one side of the base, and a light-emitting structure layer located on a side of the driving circuit layer away from the base; the driving circuit layer comprises at least one pixel driving circuit, the at least one pixel driving circuit comprises at least one transistor, the transistor comprises at least an active layer, the driving circuit layer further comprises at least one insulating layer located on a side of the active layer away from the base; the light-emitting structure layer comprises at least one light-emitting device; the display substrate further comprises a shading structure, at least part of the shading structure is located in an opening provided in the at least one insulating layer, the shading structure is configured to block light emitted by at least one of the light-emitting devices from irradiating a channel region of at least one of the active layers. The display substrate according to claim 1, wherein The active layer also includes a first region and a second region located on opposite sides of the channel region; the light-shielding structure is located between the active layer and the light-emitting structure layer; the light-shielding structure includes at least one of a first light-shielding portion and a second light-shielding portion, the orthographic projection of the first light-shielding portion on the display substrate is located within the orthographic projection of the first region on the display substrate, and the orthographic projection of the second light-shielding portion on the display substrate is located within the orthographic projection of the second region on the display substrate. The display substrate according to claim 2, wherein: The at least one insulating layer is provided with at least one opening, and the at least one opening includes at least one of a first opening and a second opening; the orthographic projection of the first opening on the display substrate is located within the orthographic projection of the first area on the display substrate, and the orthographic projection of the second opening on the display substrate is located within the orthographic projection of the second area on the display substrate; wherein, at least a portion of the first light-shielding portion is located within the first opening, and at least a portion of the second light-shielding portion is located within the second opening. The display substrate according to claim 3, wherein: A side of the first light shielding portion close to the active layer contacts the first region, and a side of the first light shielding portion away from the active layer is flush with a side of the at least one insulating layer away from the active layer. The display substrate according to claim 3, wherein: A side of the second light shielding portion close to the active layer contacts the second region, and a side of the second light shielding portion away from the active layer is flush with a side of the at least one insulating layer away from the active layer. The display substrate according to any one of claims 1 to 5, wherein the display substrate further comprises a color filter structure layer, wherein the color filter structure layer is located between the driving circuit layer and the light emitting structure layer; the color filter structure layer comprises a light shielding layer and a color filter; wherein The light shielding layer is arranged on the same layer as the color filter. The display substrate according to claim 6, wherein: The light shielding layer includes a black matrix, and at least a portion of the light shielding structure and the black matrix are interconnected as an integrated structure. The display substrate according to claim 6, wherein: Two adjacent color filters partially overlap to form an overlapping region. In a direction perpendicular to the plane of the display substrate, the overlapping region is located between two adjacent light-emitting devices. The display substrate according to any one of claims 1 to 5, wherein: The light emitting device comprises a first electrode, an organic light emitting layer and a second electrode which are stacked; the first electrode is closer to the substrate than the second electrode; The first electrode is connected to the active layer via a connecting electrode, and a portion of the connecting electrode is reused as at least a portion of the light shielding structure. The display substrate according to claim 9, wherein The connecting electrode comprises a first connecting electrode and a second connecting electrode which are stacked, and the first connecting electrode is closer to the substrate than the second connecting electrode; The first end of the first connecting electrode is connected to the active layer, the second end of the first connecting electrode is connected to the second connecting electrode, and the second connecting electrode is connected to the first electrode; wherein, parts of the first connecting electrode and the second connecting electrode are reused as at least part of the shading structure. The display substrate according to claim 9, wherein The connecting electrode comprises a first connecting electrode and a second connecting electrode which are stacked, and the first connecting electrode is closer to the substrate than the second connecting electrode; The first end of the first connecting electrode is connected to the active layer, the second end of the first connecting electrode is connected to the second connecting electrode, and the second connecting electrode is connected to the first electrode; wherein the first connecting electrode is reused as at least part of the shading structure. The display substrate according to claim 11, wherein The second connecting electrode and the first electrode are interconnected as an integral structure. The display substrate according to any one of claims 1 to 5, wherein the light-emitting device comprises a first electrode, an organic light-emitting layer and a second electrode which are stacked; the first electrode is closer to the substrate than the second electrode; the light-emitting device further comprises a pixel definition layer, the pixel definition layer is provided with a pixel opening, and the pixel opening exposes at least a portion of the surface of the first electrode; wherein At least part of the shading structure is an integrated structure connected to the pixel definition layer; or, at least part of the shading structure is an integrated structure connected to the organic light-emitting layer; or, at least part of the shading structure is an integrated structure connected to the second electrode. The display substrate according to any one of claims 1 to 5, wherein: The light-shielding structure includes a light-shielding block; the driving circuit layer includes a first conductive layer located on one side of the substrate and a semiconductor layer located on a side of the first conductive layer away from the substrate; the first conductive layer includes at least one light-shielding block, the semiconductor layer includes at least one active layer, and the orthographic projection of at least one light-shielding block on the display substrate at least partially overlaps with the orthographic projection of at least one channel region of the active layer on the display substrate. The display substrate according to claim 14, wherein: The orthographic projection of the light shielding block on the display substrate includes the orthographic projection of the channel region of the active layer on the display substrate. The display substrate according to any one of claims 1 to 5, wherein: The driving circuit layer includes a first conductive layer located on one side of the substrate, a semiconductor layer located on a side of the first conductive layer away from the substrate, and a second conductive layer located on a side of the semiconductor layer away from the substrate; the semiconductor layer includes at least one active layer, and the second conductive layer includes a gate of the transistor; wherein an orthographic projection of the gate on the display substrate at least partially overlaps with an orthographic projection of a channel region of the active layer on the display substrate. The display substrate according to claim 16, wherein The orthographic projection of the gate on the display substrate includes the orthographic projection of the channel region of the active layer on the display substrate. The display substrate according to claim 16, wherein The shading structure includes a shading block, the first conductive layer includes at least one shading block, and the orthographic projection of the gate on the display substrate, the orthographic projection of the channel region of the active layer on the display substrate, and the orthographic projection of the shading block on the display substrate are at least partially overlapped. A display device comprises the display substrate according to any one of claims 1 to 18. A method for preparing a display substrate, used for preparing the display substrate as claimed in any one of claims 1 to 18.