Halogen vacancy doped lead-free all-inorganic metal halide perovskite luminescent material and preparation method thereof
By introducing halogen vacant positions in non-lead all-inorganic perovskites to form the A2BCX6:VX quaternary structure, the problem of the prone to dark transitions of biperovskite materials is solved, and the luminescent properties and fluorescent quantum yields are significantly improved, with good stability and cost-effectiveness.
CN119931659APending Publication Date: 2025-05-06JILIN UNIVERSITY
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Patent Information
- Application Number
- CN202411901427.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-23
- Publication Date
- 2025-05-06
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Figure CN119931659A_ABST
Abstract
The invention provides a halogen vacancy doped lead-free all-inorganic metal halide perovskite luminescent material and a preparation method thereof, and belongs to the technical field of luminescent materials. Part of halogen vacancies are introduced into halogen sites in the lead-free all-inorganic perovskite, halogen in crystal lattices is deleted due to formation of the halogen vacancies, the coordination environment of surrounding cations is changed, and the bond length and bond angle are distorted, so that carrier migration, an energy band structure and the light-emitting characteristic of the material are influenced. The properties enable halogen vacancies to become ideal choices for regulating luminescent properties of metal halide perovskite and related materials. According to the embodiment of the invention, the fluorescence quantum yield (PLQY) of the original lead-free all-inorganic perovskite material of Cs2NaBiCl6 is 0.00%, and the fluorescence quantum yield of the all-inorganic perovskite material after introduction of halogen vacancy can reach 79.12%.
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