Auxiliary temperature control device for semiconductor process chamber and semiconductor process chamber

Abstract

The invention provides an auxiliary temperature control device for a semiconductor process chamber and the semiconductor process chamber. The auxiliary temperature control device comprises a heat conduction assembly which is used for being fixedly connected with the semiconductor process chamber so as to exchange heat with a process suite in the semiconductor process chamber; the cooling flow channel is arranged in the heat conduction assembly, and the cooling flow channel is used for introducing cooling liquid so as to cool the heat conduction assembly; and the heating assembly is arranged in the heat conduction assembly and used for heating the heat conduction assembly. According to the auxiliary temperature control device, the heat conduction assembly is arranged, and the cooling runner and the heating assembly are arranged in the heat conduction assembly, so that the temperature of the heat conduction assembly can be adjusted through the cooling runner and the heating assembly, heat exchange between the heat conduction assembly and the process suite is achieved, and the purpose of adjusting the temperature of the process suite is achieved; therefore, the temperature of the process suite is prevented from being too high or too low, the influence on the wafer is avoided, and the product quality of the wafer is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to an auxiliary temperature control device for a semiconductor process chamber and a semiconductor process chamber. Background Art

[0002] Physical vapor deposition technology is a type of metal or non-metal thin film technology widely used in the semiconductor industry, and has a very large application space in this industry. It mainly introduces process gas into the process chamber, generates a strong potential difference in the process chamber, ionizes the process gas into ions under the action of the potential difference, and then controls the generated magnetic field to make the ionized ions bombard the target material, and the bombarded target atoms are deposited on the wafer surface to form the target film.

[0003] However, the process chamber in the prior art has poor temperature control capability for the peripheral area of ​​the wafer, and the wafer temperature cannot meet the standard during the process, resulting in poor wafer quality. Summary of the invention

[0004] The present invention aims to at least solve the problem in the prior art that the process chamber has poor temperature control ability over the process area, the wafer temperature cannot meet the standard during the process, and the wafer quality is poor. An auxiliary temperature control device for a semiconductor process chamber and a semiconductor process chamber are proposed.

[0005] In order to achieve the purpose of the present invention, an auxiliary temperature control device for a process chamber is provided, comprising: a heat conducting component, which is used to be fixedly connected to the semiconductor process chamber to exchange heat with the process kit in the semiconductor process chamber; a cooling channel, which is arranged in the heat conducting component, and the cooling channel is used to pass a coolant to cool the heat conducting component; a heating component, which is arranged in the heat conducting component and is used to heat the heat conducting component.

[0006] Optionally, the heat conductive component includes: a first heat conductive component connected to a carrier device to exchange heat with a deposition ring in the process kit; and / or a second heat conductive component connected to an inner wall of a chamber body to exchange heat with a liner component in the process kit.

[0007] Optionally, the first heat conductor includes: an annular first heat exchange portion, having a first heat exchange surface for fitting with the deposition ring, the cooling channel and the heating assembly being located in the first heat exchange portion; and a first connecting portion connected to the inner circumference of the first heat exchange portion, the first connecting portion being used to connect to the supporting device.

[0008] Optionally, a first annular protrusion and a first annular groove are provided on the first heat exchange part, the first annular protrusion is located on the outer peripheral side of the first heat exchange surface, the first annular groove is located between the first heat exchange surface and the first annular protrusion, and the first annular protrusion and the first annular groove are used to cooperate with the clearance of the lining assembly to form a labyrinth channel.

[0009] Optionally, the second heat conductor has an annular second heat exchange portion and a second connecting portion, the second heat exchange portion has a second heat exchange surface for fitting with the lining assembly, the cooling channel and the heating assembly are located in the second heat exchange portion, the second connecting portion is connected to the outer peripheral side of the second heat exchange portion, and the second connecting portion is used to connect to the inner wall of the chamber body.

[0010] Optionally, the heat conducting component includes: the first heat conducting member and the second heat conducting member, and the cooling channel includes: a first cooling channel, which is arranged in the first heat conducting member; a second cooling channel, which is arranged in the second heat conducting member, and the first cooling channel is connected to the second cooling channel.

[0011] Optionally, the heat-conducting component includes: the first heat-conducting member and the second heat-conducting member, and the heating component includes: a first heating member, which is arranged in the first heat-conducting member; a second heating member, which is arranged in the second heat-conducting member, and the second heating member is electrically connected to the first heating member.

[0012] Optionally, the auxiliary temperature control device also includes: a first conductive member electrically connected to the first heat conductive member, the first conductive member being used to be fixed and electrically connected to the supporting device; and / or a second conductive member electrically connected to the second heat conductive member, the second conductive member being used to be electrically connected to the lining assembly.

[0013] Optionally, the heat-conducting component includes: the first heat-conducting component and the second heat-conducting component, the auxiliary temperature control device also includes the first heat-conducting component and the second heat-conducting component, and connecting wires, the connecting wires are electrically connected to the first heat-conducting component and the second heat-conducting component, respectively, and the second heat-conducting component is also used to electrically connect to the inner wall of the chamber body, so as to make the supporting device, the first heat-conducting component, the second heat-conducting component, the lining assembly and the inner wall of the chamber body electrically conductive with each other.

[0014] Optionally, the auxiliary temperature control device further includes: a temperature measuring component, which is arranged on the heat conductive component to detect the temperature of the process kit.

[0015] According to a second aspect of the present invention, a semiconductor process chamber is disclosed, comprising: a chamber body; a carrier device and a process kit arranged in the chamber body; and the above-mentioned auxiliary temperature control device, wherein the auxiliary temperature control device is fixedly connected to at least one of the chamber body and / or the carrier device to adjust the temperature of the process kit.

[0016] Optionally, the process kit includes: a lining assembly and a deposition ring, wherein the lining assembly is connected to the chamber body and the deposition ring is arranged around the supporting device; the auxiliary temperature control device includes: a first heat conductor and a second heat conductor, wherein the first heat conductor is connected to the supporting device and is fitted with the deposition ring; the second heat conductor is connected to the inner wall of the chamber body and is fitted with the lining assembly.

[0017] Optionally, the outer circumference of the deposition ring has an annular mounting portion, the mounting portion extends to the outside of the supporting device, and the first heat conductive member is attached to the mounting portion.

[0018] Optionally, the lining assembly includes: a side wall portion, which is arranged in a direction perpendicular to the bearing surface of the bearing device; a bottom wall portion, which is connected to the side wall portion, and the bottom wall portion is arranged in a direction parallel to the bearing surface, and the second heat conductor is arranged and attached to the bottom wall portion.

[0019] The auxiliary temperature control device of the present invention is configured with a heat-conducting component and a cooling channel and a heating component in the heat-conducting component. The temperature of the heat-conducting component can be adjusted through the cooling channel and the heating component, and heat can be exchanged between the heat-conducting component and the process kit to achieve the purpose of adjusting the temperature of the process kit, thereby preventing the temperature of the process kit from being too high or too low, avoiding affecting the wafer, and improving the product quality of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a structural schematic diagram of a semiconductor process chamber in the prior art;

[0021] Figure 2 A schematic diagram of heat transfer direction in a semiconductor process chamber in the prior art;

[0022] Figure 3 A schematic structural diagram of a first heat-conducting member of an auxiliary temperature control device according to an embodiment of the present invention;

[0023] Figure 4 A schematic structural diagram of a second heat-conducting member of an auxiliary temperature control device according to an embodiment of the present invention;

[0024] Figure 5 This is a schematic diagram of an auxiliary temperature control device according to an embodiment of the present invention being used in a semiconductor process chamber scenario;

[0025] Figure 6 for Figure 5 A partial enlarged view of part A;

[0026] Figure 7 for Figure 6 A partial enlarged view of part B;

[0027] Figure 8 A schematic diagram of heat transfer direction of a semiconductor process chamber in a high-power sputtering process according to an embodiment of the present invention;

[0028] Fig. 9 A schematic diagram of heat transfer direction of a semiconductor process chamber in a low-power sputtering process according to an embodiment of the present invention;

[0029] List of reference numerals:

[0030] 10. heat conducting component; 20. cooling channel; 30. heating component; 50. carrying device;

[0031] 51. Ceramic part; 52. Metal part; 60. Deposition ring; 61. Assembly part; 611. Annular slope; 612. Second annular protrusion; 62. Main body; 70. Liner assembly; 71. Side wall; 72. Bottom wall; 721. Second annular groove; 73. Shielding part; 80. Chamber body; 81. Upper chamber; 82. Lower chamber; 90. Labyrinth passage; 91. First passage; 92. Second passage; 93. Third passage; 110. Refrigerant pipe; 120 Annular step structure;

[0032] 10a, first heat-conducting member; 11a, first heat-exchanging portion; 111a, first heat-exchanging surface; 112a, first annular protrusion; 113a, first annular groove; 12a, first connecting portion; 20a, first cooling channel; 30a, first heating member; 40a, first conductive member; 100a, first temperature-measuring member;

[0033] 10b, second heat-conducting member; 11b, second heat-exchanging portion; 111b, second heat-exchanging surface; 12b, second connecting portion; 20b, second cooling channel; 30b, second heating member; 40b, second conductive member; 100b, second temperature-measuring member. DETAILED DESCRIPTION

[0034] In order to enable those skilled in the art to better understand the technical solution of the present invention, the auxiliary temperature control device for a semiconductor process chamber and the semiconductor process chamber provided by the present invention are described in detail below with reference to the accompanying drawings.

[0035] Physical vapor deposition technology is a type of metal or non-metal thin film technology widely used in the semiconductor industry, and has a very large application space in this industry. It mainly introduces process gas into the process chamber, generates a strong potential difference in the process chamber, ionizes the process gas into ions under the action of the potential difference, and then controls the generated magnetic field to make the ionized ions bombard the target material, and the bombarded target atoms are deposited on the wafer surface to form the target film.

[0036] like Figure 1 The process chamber for semiconductor processing shown includes: a chamber body 1 , a carrier 2 arranged in the chamber body 1 , and a process kit including a liner assembly 3 , a deposition ring 4 , and a shielding ring 5 . Figure 1 The gas source 6 is used to deliver process gas into the chamber body 1. The top of the chamber body 1 has a target material 7; the liner assembly 3 is located on the outer peripheral side of the carrier 2; the carrier 2 is used to place wafers, and the deposition ring 4 is arranged between the carrier 2 and the liner assembly 3. The carrier 2, the deposition ring 4, the liner assembly 3 and the target material 7 separate the chamber body 1 into a process area 8 and a non-process area 9. The process area 8 is used for semiconductor processing, and the gas source 6 is connected to the outer cavity.

[0037] The process chamber in the prior art has the following problems:

[0038] First, in the high-power (22-55KW) aluminum and other thin film sputtering process, the carrier device 2 needs to move upward, and at the same time drive the deposition ring 4 upward, and after reaching a certain height, it contacts the shielding ring 5, and continues to move upward, driving the shielding ring 5 upward to separate from the liner component 3 to form a flow gap. After the gas transported by the gas source 6 enters the non-process interval 9, it enters the inner cavity through the flow gap for the plasma sputtering process.

[0039] After the gas enters the inner cavity, it is excited to form plasma. The plasma bombards the target material 7 under the constraint of the magnetic field, and the bombarded target atoms are deposited on the surface of the wafer to form a target film. Among them, the part sputtered onto the wafer to form a film is the effective sputtering part, and the part sputtered onto the liner component 3, the shielding ring 5, and the deposition ring 4 is the ineffective sputtering part.

[0040] like Figure 2 As shown, during the sputtering process, a large amount of process heat from the plasma will be transferred to the process kit including the liner component 3, the deposition ring 4 and the shielding ring 5 along directions 1 and 2, resulting in an increase in the temperature of the liner component 3, the shielding ring 5 and the deposition ring 4. Since the deposition ring 4 is located on the outer peripheral side of the carrier 2, the heat dissipation efficiency of the deposition ring in direction 3 is poor; since the shielding ring 5 has no contact with the liner component 3 during the process, the shielding ring 5 is Figure 2The heat transfer efficiency in the middle direction 4 is also very poor; since the lower chamber is in a vacuum state, the heat transfer efficiency of the liner component 3 along direction 5 toward the lower chamber is also extremely low; and since the bottom wall of the liner component 3 is far away from the side wall of the liner component 3, the heat transfer efficiency of the liner component 3 along direction 6 is extremely poor. It can be seen that the heat dissipation effect of the liner component 3, the shielding ring 5, and the deposition ring 4 in all directions is extremely poor, resulting in the accumulated temperature on the process components becoming higher and higher. Therefore, the process kit including the liner component 3, the deposition ring 4, and the shielding ring 5 will cause the wafer to radiate heat along direction 7, resulting in serious thermal stress defects in wafer film formation. In other words, in the prior art, during the continuous sputtering process of high-power (22-55KW) aluminum and other types of thin films, there is a problem of serious thermal stress defects in wafer film formation due to insufficient cooling and temperature control capabilities of the process kit including the liner component 3, the deposition ring 4, and the shielding ring 5.

[0041] Secondly, when sputtering metals and metal nitrides at low power (1-10kw) and with relatively thin film layers (i.e., short sputtering time), the thin film formation process of these materials does not produce particularly strong thermal effects like aluminum. On the contrary, due to low power sputtering and short sputtering time, the temperature accumulation is relatively slow. Generally speaking, the process of reaching 200°C during continuous temperature sputtering of process components is relatively long and slow, so there is a greater demand for rapid heating. However, in the prior art, heat will continue to accumulate during the process, and the temperature of the process kit will also produce edge thermal radiation effects on the wafer.

[0042] For example: in the first few sputtering processes, the process kit including the liner component 3, the deposition ring 4 and the shielding ring 5 does not accumulate much heat, and the heat radiation to the edge of the wafer is small; as the sputtering continues, the process kit accumulates a large amount of process heat, and the heat radiation to the edge of the wafer is strong; this causes a large difference in the film quality between the first few pieces (low process component heat radiation) and the subsequent pieces (strong process heat radiation), forming a first-piece effect, which leads to the problem of unstable wafer quality. Moreover, the prior art process kit including the liner component 3, the deposition ring 4 and the shielding ring 5 not only has poor cooling and temperature control capabilities, but also has no heating temperature control capabilities. As the process continues, the process components will form a large temperature difference between the first few pieces and the subsequent stable pieces, and will also form a more obvious first-piece effect of film quality. In other words, the prior art process kit including the liner component 3, the deposition ring 4 and the shielding ring 5 performs poorly in cooling and heating, and can only be heated passively, and the temperature is uncontrollable.

[0043] Thirdly, in the initial stage of maintenance and restoration of the target material 7 or the process kit, purity problems of the chamber body 1 are very likely to occur, resulting in various defects; this is because the lining assembly 3, deposition ring 4 and shielding ring 5 in the process kit are mostly metal parts. After the vacuum of the chamber is broken and the metal parts are exposed to the atmosphere during maintenance, they absorb a large amount of impurities such as water vapor and oxygen. If the absorbed impurities are not removed in time after the maintenance and restoration of the chamber is completed, they will precipitate in a high-temperature environment, accompanied by plasma film sputtering, forming sputtering defects. The more residual impurities, the more serious the film defects formed.

[0044] However, in the prior art, after maintenance, the lining assembly 3, the shielding ring 5, and the deposition ring 4 are irradiated and heated by a halogen lamp on the bottom side wall of the chamber to remove impurities. However, due to the limited heating capacity of the halogen lamp, the heating capacity of the lining assembly 3, the shielding ring 5, and the deposition ring 4 is not obvious, and it is difficult to reach a higher temperature, and impurities cannot be effectively removed.

[0045] Again, after nitride and other thin films are sputtered onto the lining component 3, the shielding ring 5, and the deposition ring 4, when the process is idle (no DC sputtering, no plasma heat source generated), the temperature of the lining component 3, the shielding ring 5, and the deposition ring 4 will drop, and the nitride film will harden and fall off, diffuse in the chamber, and even fall onto the wafer, causing wafer defects.

[0046] Finally, when the process is carried out, the shielding ring 5, the deposition ring 4 and the insulating part of the carrier 2 are at a suspended potential. The outer cavity is at zero potential, which will form a large potential difference with the negative potential of the carrier 2, causing the process gas to glow in the outer cavity, causing the coating contamination of the outer cavity.

[0047] In order to solve the above problems, Figure 3 and Figure 4 As shown, the present invention discloses an auxiliary temperature control device for a semiconductor process chamber. The auxiliary temperature control device includes a heat conducting component 10, a cooling channel 20 and a heating component 30. The heat conducting component 10 is used to be fixedly connected to the semiconductor process chamber so as to exchange heat with the process kit in the semiconductor process chamber; the cooling channel 20 and the heating component 30 are both arranged in the heat conducting component 10, wherein the cooling channel 20 is used to pass a coolant to cool the heat conducting component 10, and the heating component 30 is used to heat the heat conducting component 10. The auxiliary temperature control device can cool or heat the heat conducting component 10 through the cooling channel 20 and the heating component 30, so that a temperature difference is formed between the heat conducting component 10 and the process kit, thereby realizing heat exchange with the process kit.

[0048] It should be noted that the process kit in the present invention includes a deposition ring 60 and a liner assembly 70, which are arranged in a semiconductor process chamber. The process kit is used to cooperate with a carrier device 50 that is also arranged inside the semiconductor process chamber for placing wafers, thereby dividing the interior of the semiconductor process chamber into a process area and a non-process area, wherein the process area is used to perform semiconductor processes.

[0049] When the temperature of the process kit is too high, a coolant can be introduced into the cooling channel 20 to reduce the temperature of the heat conducting component 10 through the coolant, so that a temperature difference is formed between the heat conducting component 10 and the process kit. After the temperature difference is formed between the heat conducting component 10 and the process kit, the heat in the process kit will be transferred to the heat conducting component 10, and the heat conducting component 10 will transfer the heat to the coolant, and the heat will be taken away by the flowing coolant, thereby achieving the purpose of reducing the temperature of the process kit.

[0050] On the contrary, when the temperature of the process kit is too low, the heat conducting component 10 can be heated by the heating component 30, so that a temperature difference is formed between the heat conducting component 10 and the process kit after the temperature is increased. After the temperature difference is formed between the heat conducting component 10 and the process kit, the heat in the heat conducting component 10 will be transferred to the process kit. As the heating component 30 continues to heat the heat conducting component 10, the heat in the heat conducting component 10 will be continuously transferred to the process kit, thereby achieving the purpose of increasing the temperature of the process kit.

[0051] The auxiliary temperature control device of the present invention is provided with a heat-conducting component 10 and a cooling channel 20 and a heating component 30 in the heat-conducting component 10. The temperature of the heat-conducting component 10 can be adjusted through the cooling channel 20 and the heating component 30, so that heat can be exchanged between the heat-conducting component 10 and the process kit to achieve the purpose of adjusting the temperature of the process kit, thereby preventing the temperature of the process kit from being too high or too low, avoiding affecting the wafer, and improving the product quality of the wafer.

[0052] The auxiliary temperature control device of this embodiment is described in detail below in conjunction with a specific embodiment. In this embodiment, the auxiliary temperature control device is applied to a semiconductor process chamber (for example, a physical magnetic control chamber). Figure 5 The semiconductor process chamber comprises: a chamber body 80 and a carrier 50 disposed in the chamber body 80, and a process kit is disposed in the chamber body 80. The process kit comprises a deposition ring 60 and a liner assembly 70, and the auxiliary temperature control device is used to adjust the temperature of the deposition ring 60 and the liner assembly 70.

[0053] See also Figure 5During the sputtering process in the semiconductor process chamber, the carrier device 50 cooperates with the liner assembly to divide the interior of the chamber body 80 into an upper chamber 81 and a lower chamber 82. It can be understood that the upper chamber 81 is a space for processing the wafer, that is, the process zone. Therefore, in order to avoid contamination of the wafer, the auxiliary temperature control devices are all arranged in the lower chamber 82 (that is, the non-process zone).

[0054] like Figure 3 As shown, in this embodiment, the heat conducting component 10 includes: a first heat conducting member 10a; the cooling channel 20 includes: a first cooling channel 20a; and the heating component 30 includes: a first heating member 30a. The first heat conducting member 10a is used to be connected to the carrier 50 and fit with the deposition ring 60 in the process kit so as to exchange heat with the deposition ring 60. The first cooling channel 20a and the first heating member 30a are both arranged in the first heat conducting member 10a. By arranging the first cooling channel 20a and the first heating member 30a, the first heat conducting member 10a can be cooled or heated, so that a temperature difference is formed between the first heat conducting member 10a and the deposition ring 60, thereby achieving heat exchange with the deposition ring 60.

[0055] In low-power metal film sputtering and high-power aluminum sputtering, as the process proceeds, the temperature of the deposition ring 60 continues to rise. After the temperature rises, the deposition ring 60 will continuously transfer heat to the first heat conductor 10a, and then take away the heat through the cooling water in the first cooling channel 20a, thereby reducing the temperature of the deposition ring 60 and preventing the deposition ring 60 from being too high, effectively ensuring the life of the deposition ring 60 components. At the same time, it can also prevent the deposition ring 60 from radiating heat back to the wafer, thereby improving the process performance of the wafer. During the low-power metal film sputtering process, the heat on the deposition ring 60 is continuously transferred to the first heat conductor 10a and taken away by cooling water, thereby effectively preventing heat from accumulating on the deposition ring 60, keeping the process temperature relatively stable during the process, avoiding the first-piece effect, and ensuring the stability of the wafer product quality.

[0056] In addition, in the early stage of low-power metal film sputtering, the deposition ring 60 can be indirectly heated by the first heating element 30a, so that the deposition ring 60 radiates heat to the wafer, thereby quickly reaching the temperature required for the process, avoiding the first-piece effect, and ensuring the stability of the wafer product quality. During maintenance, the first heating element 30a cooperates with the halogen lamp to quickly heat and raise the temperature, so that the deposition ring 60 can quickly precipitate the adsorbed impurities, improving the maintenance recovery speed and quality of the deposition ring 60. Moreover, when the process is idle, the deposition ring 60 can be continuously heated to prevent the nitride on the deposition ring 60 from falling off due to low-temperature hardening, thereby avoiding process defects, improving particle control capabilities, and improving wafer product quality.

[0057] like Figure 3As shown, in this embodiment, the first heat-conducting member 10a includes: an annular first heat exchange portion 11a and a first connecting portion 12a. The annular first heat exchange portion 11a has a first heat exchange surface 111a for bonding with the deposition ring 60. The first heat exchange surface 111a is parallel to the bearing surface (the plane for supporting the wafer) of the bearing device 50. A heat-conducting layer is provided on the first heat exchange surface 111a. The first heat exchange surface 111a is bonded to the deposition ring 60 through the heat-conducting layer to improve the efficiency of heat transfer. The first cooling channel 20a and the first heating element 30a are located in the first heat exchange portion 11a. The first cooling channel 20a and the first heating element 30a are both arranged in the circumferential direction. The first heating element 30a is located between the first heat exchange surface 111a and the first cooling channel 20a. By arranging the first heating element 30a between the first cooling channel 20a and the first heat exchange surface 111a, the first heating element 30a can be closer to the deposition ring 60 when heating, reducing energy loss during heat transfer and improving the heating effect. Optionally, in this embodiment, the first heating element 30a is a heating wire.

[0058] like Figure 3 The first connection portion 12a is connected to the inner peripheral side of the first heat exchange portion 11a ( Figure 3 The first connection portion 12a is used to connect with the carrier device 50. By providing the first connection portion 12a, the first heat exchange portion 11a is connected and fixed to the carrier device 50 through the first connection portion 12a, so that the first heat exchange surface 111a of the first heat exchange portion 11a is in contact with the deposition ring 60. In this embodiment, the first connection portion 12a is an inner ring groove, and the outer peripheral wall of the carrier device 50 is located inside the inner ring groove.

[0059] like Figure 3 As shown, the first heat exchange portion 11a is also provided with a first annular protrusion 112a and a first annular groove 113a, and the first annular protrusion 112a is located on the outer peripheral side of the first heat exchange surface 111a ( Figure 3 The first annular groove 113a is located between the first heat exchange surface 111a and the first annular protrusion 112a. The first annular protrusion 112a and the first annular groove 113a are used to cooperate with the liner assembly 70 to form a labyrinth channel 90 (see Figure 6 By providing the first annular protrusion 112a and the first annular groove 113a and cooperating with the lining assembly 70 to form a labyrinth channel 90, during the sputtering process, the plasma gas in the upper chamber 81 can be prevented from diffusing and leaking to the lower chamber 82, thereby preventing the lower chamber 82 from being contaminated by the coating due to leakage.

[0060] like Figure 4As shown, the heat conducting component 10 further includes: a second heat conducting member 10b; the cooling channel 20 further includes: a second cooling channel 20b; and the heating component 30 further includes: a second heating member 30b. The second heat conducting member 10b is used to be connected to the inner wall of the chamber body 80 and to fit with the lining component 70 so as to exchange heat with the lining component 70. The second cooling channel 20b and the second heating member 30b are both arranged in the second heat conducting member 10b. By arranging the second cooling channel 20b and the second heating member 30b, the second heat conducting member 10b can be cooled or heated, so that a temperature difference is formed between the second heat conducting member 10b and the lining component 70, thereby achieving heat exchange with the lining component 70.

[0061] In low-power metal film sputtering and high-power aluminum sputtering, as the process proceeds, the temperature of the lining component 70 continues to rise. After the temperature rises, the lining component 70 will continuously transfer the heat to the second heat conductor 10b, and then the heat will be taken away by the cooling water in the second cooling channel 20b, thereby reducing the temperature of the lining component 70 and preventing the lining component 70 from being too high, effectively ensuring the life of the lining component 70. At the same time, it can also prevent the lining component 70 from radiating heat back to the wafer, thereby improving the process performance of the wafer. During the low-power metal film sputtering process, the heat on the lining component 70 is continuously transferred to the second heat conductor 10b and taken away by the cooling water, thereby effectively preventing the heat from accumulating on the lining component 70, so that the process temperature remains relatively stable during the process, avoiding the first-piece effect, and ensuring the stability of the wafer product quality.

[0062] In addition, in the early stage of low-power metal film sputtering, the liner component 70 can be indirectly heated by the second heating element 30b, so that the liner component 70 radiates heat to the wafer, thereby quickly reaching the temperature required for the process, avoiding the first-piece effect, and ensuring the stability of the wafer product quality. During maintenance, the second heating element 30b cooperates with the halogen lamp to quickly heat and raise the temperature, so that the liner component 70 can quickly precipitate the adsorbed impurities, improving the maintenance and recovery speed and quality of the liner component 70. Moreover, when the process is idle, the liner component 70 can be continuously heated to prevent the nitride on the liner component 70 from falling off due to low-temperature hardening, thereby avoiding process defects, improving particle control capabilities, and improving wafer product quality.

[0063] like Figure 4As shown, the second heat-conducting member 10b has an annular second heat exchange portion 11b and a second connecting portion 12b, the second heat exchange portion 11b has a second heat exchange surface 111b for bonding with the lining assembly 70, the second heat exchange surface 111b is parallel to the bearing surface of the bearing device 50, and a heat-conducting layer is also provided on the second heat exchange surface 111b, and the second heat exchange surface 111b is bonded to the lining assembly 70 through the heat-conducting layer to improve the efficiency of heat transfer. The second cooling channel 20b and the second heating member 30b are located in the second heat exchange portion 11b, the second cooling channel 20b and the second heating member 30b are both arranged in the circumferential direction, and the second heating member 30b is located between the second heat exchange surface 111b and the second cooling channel 20b. Similarly, by arranging the second heating member 30b between the second cooling channel 20b and the second heat exchange surface 111b, the second heating member 30b can be closer to the lining assembly 70 when heating, reducing the energy loss in the heat transfer process and improving the heating effect. Optionally, in this embodiment, the second heating element 30b is a heating wire.

[0064] The second connection portion 12b is connected to the outer peripheral side of the second heat exchange portion 11b ( Figure 4 The second connecting portion 12b is used to connect with the inner wall of the chamber body 80. Figure 6 The second connection part 12b is passed through the inner wall of the chamber body 80 and fixedly connected, so that the second heat exchange surface 111b is fitted with the liner assembly 70. At the same time, a sealed connection is formed between the second connection part 12b and the inner wall of the chamber body 80 to ensure the vacuum state inside the chamber body 80.

[0065] It should be noted that from Figure 6 As can be seen in the figure, part of the second connection part 12b has extended to the outside of the chamber body 80, so the part of the second connection part 12b located outside the chamber body 80 can be grounded, so that the entire second heat-conducting member 10b is at zero potential, and because the chamber body 80 is in direct contact with the second connection part 12b, the inner wall of the chamber body 80 can also be at zero potential at the same time. This avoids the ignition phenomenon in the lower chamber 82 caused by the excessive potential difference between the second heat-conducting member 10b and the inner wall of the chamber body 80.

[0066] In this embodiment, the auxiliary temperature control device further includes a first conductive member 40a and a second conductive member 40b. The first conductive member 40a is electrically connected to the first heat-conducting member 10a, and the first conductive member 40a is used to be fixed and electrically connected to the carrier device 50. The second conductive member 40b is electrically connected to the second heat-conducting member 10b, and the second conductive member 40b is used to be electrically connected to the lining assembly 70.

[0067] Specifically, if Figure 3As shown, the first end of the first conductive member 40a is fixedly connected to the inner wall of the first connecting portion 12a, and the second end of the first conductive member 40a protrudes from the inner wall of the first connecting portion 12a. Figure 5 During assembly, the second end of the first conductive member 40a is fixedly connected to the carrier device 50, thereby fixing the carrier device 50 and the first heat-conducting member 10a through the first conductive member 40a. At the same time, the first conductive member 40a is made of metal, which can electrically conduct the first heat-conducting member 10a and the carrier device 50.

[0068] The auxiliary temperature control device of the present invention is provided with a first conductive member 40a, and the first conductive member 40a is used to fix and electrically connect the first heat conductive member 10a and the carrier device 50, thereby ensuring the stability of the fit between the first heat conductive member 10a and the deposition ring 60, and also achieving the equipotential between the first conductive member 40a and the carrier device 50. After the carrier device 50 is grounded, the first conductive member 40a is also at zero potential. Preventing a large potential difference between the first conductive member 40a and the carrier device 50 and the inner wall of the chamber body 80 effectively avoids the ignition phenomenon in the lower chamber 82, prevents the coating contamination of the lower chamber 82, and improves the stability of the equipment.

[0069] It is understandable that, in order to improve the reliability of the connection, in this embodiment, the first conductive member 40a can be a silver-plated bolt, and the silver-plated bolt is used to fix and electrically connect the first heat conductive member 10a to the carrier device 50, thereby improving the reliability of the connection between the heat conductive component 10 and the outer wall of the inner cavity. Of course, this is not restrictive, and any component that can simultaneously play the role of fixing and electrically connecting is within the protection scope of the present invention.

[0070] like Figure 4 As shown, a mounting groove is provided on the second heat exchange surface 111b, and the first end of the second conductive member 40b is located in the mounting groove and fixedly connected to the inner wall of the mounting groove. The second end of the second conductive member 40b protrudes out of the second heat exchange surface 111b. Figure 6 When the second heat exchange surface 111b is attached to the lining assembly 70, the second end of the second conductive member 40b abuts against the surface of the lining assembly 70, and the second conductive member 40b made of metal makes electrical conduction between the second conductive member 40b and the lining assembly 70. After the second heat conductive member 10b is connected to the inner wall of the chamber body 80, the second heat conductive member 10b and the inner wall of the chamber body 80 are also electrically conductive, thereby making electrical conduction between the second heat conductive member 10b, the interior of the chamber body 80 and the lining assembly 70.

[0071] The auxiliary temperature control device of the present invention is provided with a second conductive member 40b, and the second conductive member 40b is used to realize the electrical connection between the second heat conductive member 10b and the lining assembly 70, so that the second conductive member 40b, the inner wall of the chamber body 80 and the lining assembly 70 are at the same potential. After the second heat conductive member 10b is grounded, the second conductive member 40b, the inner wall of the chamber body 80 and the lining assembly 70 are all at zero potential, effectively preventing the second conductive member 40b and the inner wall of the carrier device 50 and the chamber body 80 from generating a large potential difference, avoiding the ignition phenomenon in the lower chamber 82 to cause coating pollution, and improving the stability of the equipment. Zero potential and equal potential state, not affected by plasma bombardment and leakage radio frequency.

[0072] It can be understood that the second end of the second conductive member 40b is only slightly higher than the second heat exchange surface 111b to avoid affecting the fit between the second heat exchange surface 111b and the lining assembly 70; in addition, the thermal conductive layer needs to avoid the position of the second conductive member 40b to avoid affecting the electrical conduction effect between the second conductive member 40b and the lining assembly 70.

[0073] like Figure 6 In the illustrated embodiment, a connecting wire (not shown in the figure) is further provided between the first heat conducting member 10a and the second heat conducting member 10b, and the two ends of the connecting wire are respectively connected to the first heat conducting member 10a and the second heat conducting member 10b, so as to realize electrical conduction between the first heat conducting member 10a and the second heat conducting member 10b. After the first heat conducting member 10a and the second heat conducting member 10b are connected, the bearing device 50, the first heat conducting member 10a, the second heat conducting member 10b, the lining assembly 70 and the inner wall of the chamber body 80 are all at the same potential. After the second heat conducting member 10b is grounded, the bearing device 50, the first heat conducting member 10a, the second heat conducting member 10b, the lining assembly 70 and the inner wall of the chamber body 80 located in the lower chamber 82 are all at zero potential, which effectively prevents the occurrence of the ignition phenomenon in the lower chamber 82. Therefore, the lower chamber 82 will not be affected by plasma bombardment and leakage radio frequency, which avoids the lower chamber 82 from being contaminated by the coating, and improves the stability and life of the equipment.

[0074] like Figure 5As shown, in the present embodiment, a refrigerant pipe 110 is further provided between the first heat conducting member 10a and the second heat conducting member 10b, and one end of the refrigerant pipe 110 is connected to the first cooling channel 20a, and the second end of the refrigerant pipe 110 is connected to the second cooling channel 20b, so that the first cooling channel 20a and the second cooling channel 20b are connected to each other, so that the first cooling channel 20a and the second cooling channel 20b can share a water inlet pipeline and a water outlet pipeline (not shown in the figure). Similarly, the first heating member 30a and the second heating member 30b can be electrically connected through a wire (not shown in the figure), so that the first heating member 30a and the second heating member 30b share a set of circuits for power supply and control, thereby simplifying the overall structure, reducing the risk of gas leakage inside the chamber body 80, and reducing the modification cost.

[0075] In this embodiment, the auxiliary temperature control device further includes: a temperature measuring component, which includes a first temperature measuring component 100a and a second temperature measuring component 100b. The first temperature measuring component 100a is arranged on the first heat conducting component 10a, and is used to detect the temperature of the deposition ring 60, and the second temperature measuring component 100b is arranged on the second heat conducting component 10b, and is used to detect the temperature of the liner component 70.

[0076] like Figure 3 As shown, the first temperature measuring component 100a is embedded in the first heat exchange portion 11a of the first heat conductive component 10a, one end of the first temperature measuring component 100a extends to the position of the first heat exchange surface 111a, and the heat conductive layer on the first heat exchange surface 111a covers the first temperature measuring component 100a. When the first heat exchange surface 111a is in contact with the deposition ring 60, the first temperature measuring component 100a can also abut against the deposition ring 60 to measure the temperature of the deposition ring 60. Moreover, since the heat conductive layer covers the first temperature measuring component 100a, that is, heat is transferred between the first temperature measuring component 100a and the deposition ring 60 through the heat conductive layer, the temperature detected by the first temperature measuring component 100a can be improved to be more accurate and timely.

[0077] Similarly, if Figure 4 As shown, the second temperature measuring component 100b is embedded in the second heat exchange portion 11b of the second heat conductive component 10b, one end of the second temperature measuring component 100b extends to the position of the second heat exchange surface 111b, and the heat conductive layer on the second heat exchange surface 111b covers the second temperature measuring component 100b. When the second heat exchange surface 111b is in contact with the lining component 70, the second temperature measuring component 100b can also abut against the lining component 70 to measure the temperature of the lining component 70. Moreover, since the heat conductive layer covers the second temperature measuring component 100b, that is, heat is transferred between the second temperature measuring component 100b and the lining component 70 through the heat conductive layer, the temperature detected by the second temperature measuring component 100b can be more accurate and timely.

[0078] The auxiliary temperature control device of the present invention can monitor the temperature of the deposition ring 60 and the liner assembly 70 in real time by setting a temperature measuring component, and obtain real-time feedback, so that the temperature of the deposition ring 60 and the liner assembly 70 can be actively adjusted according to the feedback temperature, forming a closed-loop temperature adjustment, so that the process temperature is in the optimal temperature range, reducing the fluctuation of the process temperature, avoiding the first-piece effect, and ensuring the stability of the wafer product quality. In this embodiment, the first temperature measuring component 100a and the second temperature measuring component 100b are both temperature measuring thermocouples, but this is not restrictive. As long as it is a device that can measure temperature, it is within the protection scope of the present invention without violating the working principle and inventive concept of the present invention.

[0079] According to a second aspect of the present invention, a semiconductor process chamber is also disclosed, comprising: a chamber body 80, a carrier device 50, a process kit and the above-mentioned auxiliary temperature control device.

[0080] In such Figure 5 In the illustrated embodiment, the carrier 50 and the process kit are both disposed in the chamber body 80. The auxiliary temperature control device is fixedly connected to at least one of the chamber body 80 and the carrier 50 to adjust the temperature of the process kit.

[0081] The semiconductor process chamber of the present invention is provided with an auxiliary temperature control device, and the temperature of the process kit can be adjusted by the auxiliary temperature control device to prevent the temperature of the process kit from being too high or too low and affecting the quality of the wafer, thereby improving the product quality of the wafer.

[0082] It can be understood that in this embodiment, the carrying device 50 is arranged in the chamber body 80 in a liftable manner, and the carrying device 50 can be matched or disengaged with the liner assembly 70 by lifting. Figure 5 During the sputtering process in the semiconductor process chamber, the carrier device 50 rises to a position that cooperates with the liner assembly 70. The carrier device 50 and the liner assembly 70 divide the interior of the chamber body 80 into an upper chamber 81 and a lower chamber 82. The upper chamber 81 is a process area for performing sputtering processing on the wafer, and the lower chamber 82 is a non-process area. Auxiliary temperature control devices are all arranged in the lower chamber 82.

[0083] See also Figure 5The process kit includes: a liner assembly 70 and a deposition ring 60. The liner assembly 70 is connected to the chamber body 80. The deposition ring 60 is arranged around the carrier 50. After the carrier 50 rises to a position to match the liner assembly 70, the deposition ring 60 and the liner assembly 70 are loosely matched. The auxiliary temperature control device includes: a first heat conductive member 10a and a second heat conductive member 10b. The first heat conductive member 10a is connected to the carrier 50 and fits the deposition ring 60. The second heat conductive member 10b is connected to the inner wall of the chamber body 80 and fits the liner assembly 70.

[0084] Specifically, if Figure 6 As shown, the deposition ring 60 includes a body portion 62 and an assembly portion 61 disposed on the outer peripheral side of the body portion 62, and the assembly portion 61 is an annular structure. The assembly portion 61 extends to the outer side of the carrier 50 in a direction parallel to the bearing surface and is located between the carrier 50 and the liner assembly 70, and the assembly portion 61 has a first side facing the bearing surface and a second side facing away from the bearing surface.

[0085] like Figure 7 As shown, on the first side of the mounting portion 61, the mounting portion 61 has an annular slope 611, which is formed from the inside to the outside of the deposition ring 60 ( Figure 7 The height of the annular slope 611 gradually increases in the direction from left to right. A second annular protrusion 612 is provided on the second side of the assembly portion 61. The second annular protrusion 612 is located on the outer peripheral side of the assembly portion 61. The first heat conducting member 10a is attached to the second side of the assembly portion 61.

[0086] like Figure 6 As shown, the lining assembly 70 includes: a side wall portion 71, a bottom wall portion 72 and a shielding portion 73. The side wall portion 71 is arranged in a direction perpendicular to the bearing surface of the bearing device 50; the bottom wall portion 72 is arranged in a direction parallel to the bearing surface, and the bottom wall portion 72 is an annular structure, the inner peripheral wall of the bottom wall portion 72 is in clearance with the outer side of the assembly portion 61, and the outer side of the bottom wall portion 72 is connected to the side wall portion 71; the shielding portion 73 is an annular structure, which is connected to the inner peripheral wall of the bottom wall portion 72, and the second heat conducting member 10b is arranged and attached to the bottom wall portion 72.

[0087] like Figure 7 As shown, the shielding portion 73 is located above the annular slope 611, the inner surface of the shielding portion 73 facing the annular slope 611 is parallel to the annular slope 611, and a first channel 91 is formed between the inner surface of the shielding portion 73 and the annular slope 611. The inner peripheral wall of the bottom wall portion 72 is parallel to the outer peripheral wall of the assembly portion 61, and a second channel 92 communicating with the first channel 91 is formed between the inner peripheral wall of the bottom wall portion 72 and the outer peripheral wall of the assembly portion 61.

[0088] like Figure 6As shown, the first heat conducting member 10a includes: an annular first heat exchanging portion 11a and a first connecting portion 12a. Figure 7 As shown, the first heat exchange surface 111a of the first heat exchange portion 11a is attached to the second side of the assembly portion 61. The first heat exchange portion 11a is also provided with a first annular protrusion 112a and a first annular groove 113a. The first annular protrusion 112a is located on the outer peripheral side of the first heat exchange surface 111a ( Figure 7 The first annular groove 113a is located between the first heat exchange surface 111a and the first annular protrusion 112a, and the second annular protrusion 612 is located in the first annular groove 113a.

[0089] like Figure 7 As shown, a second annular groove 721 is provided on the bottom wall portion 72. After the supporting device 50 rises to a position cooperating with the lining assembly 70, the first annular protrusion 112a is inserted into the second annular groove 721 and is loosely fitted, so that a third channel 93 connected to the second channel 92 is formed between the outer wall of the first annular protrusion 112a and the inner wall of the second annular groove 721, and between the bottom wall portion 72 and the inner wall of the first annular groove 113a.

[0090] like Figure 7 As shown, the connected first channel 91, the second channel 92 and the third channel 93 together form a labyrinth channel 90, and the upper chamber 81 and the lower chamber 82 are connected through the labyrinth channel 90. During the sputtering process, since the first channel 91 is directly connected to the upper chamber 81 and the entire channel is inclined, the plasma gas forms a small amount of coating there; since the second channel 92 is connected to the upper chamber 81 through the first channel 91, the plasma gas forms a trace of coating there; and since the third channel 93 is connected to the upper chamber 81 through the first channel 91 and the second channel 92, the plasma gas has basically been consumed in the first channel 91 and the second channel 92, so there is no coating in the third channel 93, which effectively prevents the plasma from continuing to leak downward and sputter into the lower chamber 82, avoiding the risk of leakage and preventing the lower chamber 82 from being contaminated by the coating. At the same time, the ignition gas (generally argon) can be guided to the upper chamber 81 through the labyrinth channel 90 for effective ignition. In addition, in the conventional technology, the maze structure is mostly formed by the cooperation of the deposition ring 60 and the lining assembly 70, so the cleaning area of ​​the deposition ring 60 is relatively large. However, the present invention effectively disassembles the maze structure. Compared with the conventional technology, the third channel 93 without coating does not need to be cleaned, which can effectively reduce the cleaning area of ​​the deposition ring 60, save cleaning costs, reduce cleaning risks and the probability of cleaning defects, and reduce the risk of scrapping caused by cleaning.

[0091] like Figure 6As shown, the outer peripheral wall of the supporting device 50 and the surface of the second side of the assembly part 61 form an annular step structure 120, the first connecting part 12a is an inner annular groove, the annular step structure 120 is located in the first connecting part 12a, and the first connecting part 12a and the annular step structure 120 are fixed and electrically connected through the first conductive member 40a, thereby ensuring the fit between the first heat exchange part 11a and the first side surface.

[0092] It is understandable that if Figure 6 As shown, the supporting device 50 includes: a ceramic part 51 for supporting the wafer and a metal part 52 located below the ceramic part 51, and the connection position between the ceramic part 51 and the metal part 52 is located at the position of the annular step structure 120, that is, the part of the annular step structure 120 close to the deposition ring 60 is the ceramic part 51, and the part away from the deposition ring 60 is the metal part 52, and the first conductive member 40a is connected to the metal part 52, thereby achieving reliable and stable fixation and electrical connection.

[0093] The working principle of the semiconductor process chamber of the embodiment of the present invention is specifically described below in combination with specific process conditions:

[0094] In the high-power aluminum sputtering process, the energy of the plasma increases with the power. The higher the power, the stronger the energy and the more heat is generated. Figure 8 As shown, the heat generated by the plasma is transferred to the deposition ring 60 along direction 1 and to the liner assembly 70 along direction 2 .

[0095] After the deposition ring 60 is heated, the heat continues to transfer. A portion of the heat on the deposition ring 60 is transferred downward to the first heat conductor 10a along direction 3 , and another portion of the heat on the deposition ring 60 is further transferred to the bottom wall portion 72 of the lining assembly 70 along direction 4 .

[0096] After the liner assembly 70 is heated, part of the heat of the bottom wall portion 72 will be transferred to the second heat transfer space in the lower chamber 82 along direction 5, and the other part of the heat will be transferred to the water cooling pipeline on the side wall portion 71 along direction 6.

[0097] In the prior art, since the heat transfer efficiency in directions 3 and 5 is very weak, a large amount of heat will be accumulated in the deposition ring 60, the shielding portion 73, and the bottom wall portion 72. However, in the present invention, since the first heat conductor 10a is attached to the deposition ring 60 and the second heat conductor 10b is attached to the bottom wall portion 72, the heat transfer efficiency in directions 3 and 5 can be improved. In combination with the first cooling channel 20a and the second cooling channel 20b, the cooling water in the first cooling channel 20a and the second cooling channel 20b takes away the heat, so that the deposition ring 60, the bottom wall portion 72 and the shielding portion 73 always maintain a relatively low temperature, thereby preventing the deposition ring 60, the lining assembly 70 and other process kits from being overheated, thereby increasing the service life of the process kits. At the same time, it prevents the process kits from radiating heat back to the wafers, thereby improving the process performance of the wafers.

[0098] like Fig. 9 As shown, during the sputtering process of titanium, tantalum, etc., the temperature of the deposition ring 60 and the liner assembly 70 is insufficient (not reaching the optimal process temperature range) due to the low DC sputtering power at the initial stage of the process. Therefore, the heat transfer along directions 1, 2 and 4 is slow, and the temperature of the deposition ring 60, the shielding portion 73 and the bottom wall portion 72 has not risen to the required optimal process temperature. Therefore, in the figure, the deposition ring 60 transfers less heat in the reverse direction, and the shielding portion 73 and the bottom wall portion 72 transfer less heat in the reverse direction.

[0099] The process chamber of the present invention can actively heat the deposition ring 60 and the lining assembly 70 by the first heating element 30a and the second heating element 30b respectively. The first heat conductor 10a transfers heat along direction 3, and the second heat conductor 10b transfers heat along direction 5, so that the deposition ring 60 and the lining assembly 70 can quickly reach the required process temperature, and then heat the wafer along the reverse direction 1 and the reverse direction 2.

[0100] It is not difficult to see that when the process is idle, the first heating element 30a and the second heating element 30b can also be used to heat the deposition ring 60, the shielding portion 73, and the lining assembly 70 to maintain a certain temperature to avoid the first-piece effect and the risk of film falling off.

[0101] In addition, during the maintenance of the process components, the deposition ring 60 and the lining assembly 70 are maintained and baked through the full power output of the first heating element 30a and the second heating element 30b, so that the deposition ring 60 and the lining assembly 70 can quickly reach the highest temperature, stimulate the impurities adsorbed inside, and achieve the purpose of quickly and thoroughly removing impurities. The baking temperature of the deposition ring 60 and the lining can also be measured and evaluated by the first temperature measuring element 100a and the second temperature measuring element 100b to evaluate the baking and impurity removal effects.

[0102] It should also be noted that, in the present embodiment, the heat-conducting assembly 10 includes a first heat-conducting member 10a and a second heat-conducting member 10b. However, this is not restrictive. In some other embodiments not shown in the figure, an auxiliary temperature control device is also disclosed, and its structure is basically the same as the auxiliary temperature control device structure in the above embodiment. The difference is that in these other embodiments, the heat-conducting assembly 10 only includes one of the first heat-conducting member 10a or the second heat-conducting member 10b. Correspondingly, in the semiconductor process chamber, only the first heat-conducting member 10a is provided on the deposition ring 60 or only the second heat-conducting member 10b is provided on the lining assembly 70. The above structure can also achieve temperature regulation of the deposition ring 60 or the lining assembly 70. Therefore, without violating the working principle and inventive concept of the present invention, the above embodiment is also within the protection scope of the present invention.

[0103] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. An auxiliary temperature control device for a semiconductor process chamber, characterized in that: include: A heat conducting component, used for fixedly connecting with the semiconductor process chamber to exchange heat with the process kit in the semiconductor process chamber; A cooling channel is provided in the heat conducting component, and the cooling channel is used to pass a coolant to cool the heat conducting component; A heating component is arranged in the heat-conducting component and is used for heating the heat-conducting component.

2. The auxiliary temperature control device according to claim 1, characterized in that: The heat conducting component comprises: a first heat conducting member, configured to be connected to the carrier device so as to exchange heat with the deposition ring in the process kit; and / or The second heat conducting member is used to be connected to the inner wall of the chamber body to exchange heat with the liner assembly in the process kit.

3. The auxiliary temperature control device according to claim 2, characterized in that: The first heat conducting member comprises: An annular first heat exchange portion having a first heat exchange surface for affixing to the deposition ring, wherein the cooling channel and the heating assembly are located in the first heat exchange portion; The first connecting portion is connected to the inner circumference of the first heat exchange portion, and the first connecting portion is used to be connected to the supporting device.

4. The auxiliary temperature control device according to claim 3, characterized in that: A first annular protrusion and a first annular groove are provided on the first heat exchange part, the first annular protrusion is located on the outer peripheral side of the first heat exchange surface, the first annular groove is located between the first heat exchange surface and the first annular protrusion, and the first annular protrusion and the first annular groove are used to cooperate with the clearance of the lining assembly to form a labyrinth channel.

5. The auxiliary temperature control device according to claim 2, characterized in that: The second heat conductor has a second annular heat exchange portion and a second connecting portion, the second heat exchange portion has a second heat exchange surface for fitting with the lining assembly, the cooling channel and the heating assembly are located in the second heat exchange portion, the second connecting portion is connected to the outer peripheral side of the second heat exchange portion, and the second connecting portion is used to connect to the inner wall of the chamber body.

6. The auxiliary temperature control device according to claim 2, characterized in that: The heat conduction assembly comprises: the first heat conduction member and the second heat conduction member, and the cooling channel comprises: A first cooling channel is arranged in the first heat conducting member; The second cooling channel is arranged in the second heat conducting member, and the first cooling channel is communicated with the second cooling channel.

7. The auxiliary temperature control device according to claim 2, characterized in that: The heat-conducting assembly comprises: the first heat-conducting member and the second heat-conducting member, and the heating assembly comprises: A first heating element, disposed in the first heat conducting element; The second heating element is arranged in the second heat-conducting element, and the second heating element is electrically connected to the first heating element.

8. The auxiliary temperature control device according to claim 2, characterized in that: The auxiliary temperature control device also includes: A first conductive member is electrically connected to the first heat conductive member, and the first conductive member is used to be fixed to and electrically connected to the supporting device; and / or, A second conductive member is electrically connected to the second heat conductive member, and the second conductive member is used to be electrically connected to the lining assembly.

9. The auxiliary temperature control device according to claim 8, characterized in that: The heat-conducting assembly includes: the first heat-conducting member and the second heat-conducting member, and the auxiliary temperature control device also includes the first conductive member and the second conductive member, and a connecting wire. The connecting wire is electrically connected to the first heat conductor and the second heat conductor respectively, and the second heat conductor is also used to electrically connect to the inner wall of the chamber body, so that the supporting device, the first heat conductor, the second heat conductor, the lining assembly and the inner wall of the chamber body are electrically connected to each other.

10. The auxiliary temperature control device according to claim 1, characterized in that: The auxiliary temperature control device also includes: The temperature measuring component is arranged on the heat conducting component to detect the temperature of the process kit.

11. A semiconductor process chamber, characterized in that: include: chamber body; A carrying device and a process kit disposed in the chamber body; According to any one of claims 1 to 10, the auxiliary temperature control device is fixedly connected to at least one of the chamber body and / or the carrier device to adjust the temperature of the process kit.

12. The semiconductor process chamber according to claim 11, characterized in that: The process kit comprises: a liner assembly and a deposition ring, wherein the liner assembly is connected to the chamber body, and the deposition ring is arranged around the carrier; The auxiliary temperature control device includes: a first heat conductive member and a second heat conductive member, wherein the first heat conductive member is connected to the supporting device and fits the deposition ring; the second heat conductive member is connected to the inner wall of the chamber body and fits the lining assembly.

13. The semiconductor process chamber according to claim 12, wherein: The outer peripheral side of the deposition ring has an annular mounting portion, the mounting portion extends to the outside of the carrying device, and the first heat conducting member is attached to the mounting portion.

14. The semiconductor process chamber according to claim 12, wherein: The lining assembly comprises: A side wall portion, arranged in a direction perpendicular to the bearing surface of the bearing device; The bottom wall portion is connected to the side wall portion, the bottom wall portion is arranged in a direction parallel to the bearing surface, and the second heat conducting member is arranged and attached to the bottom wall portion.

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