A vapor growth chamber

Abstract

The present application provides a vapor growth chamber, which includes a growth chamber, a base, a shaft body, a tray and a gas injection mechanism. The shaft body is hermetically penetrated through the growth chamber and fixed in the middle of the base. The top of the shaft body protrudes from the top surface of the base. One side wall of the tray accommodation cavity with an opening on the top surface provided on the top surface of the base is open near the top of the shaft body; the tray is accommodated in the tray accommodation cavity, and one side wall opening of the first end of the tray near the top of the shaft body is movably adapted to the top of the shaft body; a tray driving air passage communicating with the tray accommodation cavity is provided on the base and extends below the second end. The bottom surface of the tray shields the opening of the tray driving air passage on the tray accommodation cavity. When the flow direction of the process gas provided by the gas injection mechanism to the substrate is from the first end to the second end, the tray driving air passage can provide driving gas to lift the second end relative to the first end, so as to adjust the depletion trend of the process gas during deposition on the substrate and improve the uniformity of the thickness of the substrate film layer.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and particularly relates to a vapor growth chamber. Background Art

[0002] In the field of semiconductor film deposition technology, in order to achieve high-performance semiconductor devices, extremely high requirements are placed on the uniformity and quality of the thin film. Horizontal flow equipment is widely used due to its unique gas flow pattern. Horizontal flow equipment includes two types: central gas inlet and sidewall gas inlet. Their main feature is that the growth surface of the substrate is arranged parallel to the flow direction of the source gas, and this parallel arrangement helps to control the uniformity of gas flow.

[0003] However, since the consumption trend of the process gas proceeds along the gas flow direction, the reaction on the upstream side of the center of the pedestal is more active, while the deposition process shows a depletion trend on the downstream side. This non-uniform consumption and deposition pattern limits the uniformity of the film layer, and may thus affect the performance and reliability of the final product. Summary of the Invention

[0004] In view of the defects and deficiencies in the prior art, the present application provides a vapor growth chamber that can adjust the tilt angle of the substrate in real time according to the deposition situation during the process, which is beneficial to optimizing the deposition process of the process gas on the substrate, reducing the non-uniform deposition phenomenon, and improving the uniformity of the thickness of the deposited film layer on the substrate.

[0005] The present application provides a vapor growth chamber, comprising:

[0006] A growth chamber;

[0007] A base, disposed in the growth chamber, having a tray receiving cavity with an open top surface at the top;

[0008] A shaft body, sealingly penetrating the growth chamber and fixedly disposed in the middle of the base, the top of the shaft body protruding above the top surface of the base, and one side wall of the tray receiving cavity near the top of the shaft body being open and communicating with the open top surface of the tray receiving cavity;

[0009] A tray for carrying a substrate, received in the tray receiving cavity, the tray including a first end and a second end opposite to each other in the radial direction of the tray receiving cavity, the first end being movably adapted to the top of the shaft body through the open side wall of the tray receiving cavity near the top of the shaft body;

[0010] A gas injection mechanism, disposed in the growth chamber, for injecting a process gas and causing the process gas to flow through the substrate, the oncoming flow direction of the process gas flowing through the substrate being from the first end to the second end;

[0011] The tray driving air duct is arranged on the base, extends below the second end portion, and communicates with the tray accommodating cavity. The bottom surface of the tray shields the opening of the tray driving air duct on the tray accommodating cavity. The tray driving air duct is used to provide driving gas to lift or lower the second end portion relative to the first end portion.

[0012] As an implementation manner, the top of the shaft body is a convex fitting portion, and the first end portion includes an end side wall facing the convex fitting portion;

[0013] At least part of the side walls of the end side wall and the convex fitting portion are slidably fitted; or,

[0014] There is a gap between the end side wall and the convex fitting portion. During the process of lifting the second end portion relative to the first end portion, the tray moves towards the convex fitting portion and makes at least part of the side walls of the end side wall and the convex fitting portion slidably fitted.

[0015] As an implementation manner, the height difference between the top surface of the convex fitting portion and the top surface of the tray is greater than or equal to 0 and less than 2 cm, and the bottom surface of the region between the convex fitting portion and the corresponding tray accommodating cavity is flush with the bottom surface of the tray accommodating cavity.

[0016] As an implementation manner, the gap does not exceed 0.2 mm.

[0017] As an implementation manner, the shape of the side wall of the convex fitting portion and the shape of the end side wall are in a concave-convex fitting relationship.

[0018] As an implementation manner, the gas flow rate provided by the tray driving air duct is controlled not to exceed 15 liters per minute so that the height of the second end portion lifted relative to the first end portion does not exceed 5 mm.

[0019] As an implementation manner, the shaft body penetrates through the growth chamber in a dynamic seal and is fixedly arranged in the middle of the base to drive the base to rotate, and the rotation speed of the shaft body is controlled not to exceed 100 revolutions per minute.

[0020] As an implementation manner, the number of the tray accommodating cavities is at least 2, and each of the tray accommodating cavities is uniformly arranged around the shaft body, and the tray driving air duct is in one-to-one communication with the tray accommodating cavity.

[0021] As an implementation manner, both the tray accommodating cavity and the corresponding tray accommodated therein are in a fan-shaped ring shape.

[0022] As an implementation manner, the other top surfaces of the base except the tray accommodating cavity are flush with the other top surfaces of the tray except the area for carrying the substrate.

[0023] As an implementation manner, the tray driving air duct also extends into the shaft body and extends through the shaft body to the outside of the growth chamber.

[0024] As an implementation manner, the tray driving air duct includes a main air duct extending in the base in the direction from the first end to the second end. The main air duct is arranged in one-to-one correspondence with the tray accommodating cavities, or the number of the main air ducts is less than the number of the tray accommodating cavities.

[0025] As an implementation manner, the tray driving air duct further includes at least two branch air ducts located below the second end and communicating with the main air duct;

[0026] Each of the branch air ducts communicates with one of the tray accommodating cavities, and the bottom surface of the tray correspondingly accommodated in the tray accommodating cavity shields the opening of each branch air duct on the tray accommodating cavity; or,

[0027] When the number of the tray accommodating cavities is at least 2, among adjacent tray accommodating cavities, each tray accommodating cavity communicates with at least one branch air duct, and the bottom surface of the tray correspondingly accommodated shields the opening of the corresponding branch air duct on the tray accommodating cavity.

[0028] As an implementation manner, the main air duct is located below the tray accommodating cavity; or, when the number of the tray accommodating cavities is at least 2, the area between adjacent tray accommodating cavities is an interval area, and the main air duct extends in the interval area.

[0029] As an implementation manner, a substrate accommodating cavity for accommodating the substrate is arranged on the top surface of the tray to define the position of the substrate relative to the tray. The shaft body is provided with a self-rotation driving air duct, and the self-rotation driving air duct extends into the tray through the side wall of the convex matching part of the shaft body and communicates with the substrate accommodating cavity to provide a self-rotation driving gas to make the substrate rotate relative to the tray.

[0030] As an implementation manner, at least part of the side wall of the end part is in sliding fit with the side wall of the convex matching part, and the outlet of the self-rotation driving air duct on the side wall of the convex matching part communicates with the inlet on the side wall of the end part;

[0031] During the process of the second end lifting relative to the first end, the outlet of the self-rotation driving air duct on the side wall of the convex matching part communicates with the inlet on the side wall of the end part.

[0032] As an implementation manner, there is the distance between the side wall of the end part and the convex matching part, and the outlet of the self-rotation driving air duct on the side wall of the convex matching part is opposite to the inlet on the side wall of the end part;

[0033] During the process of the second end being lifted relative to the first end, the self-rotation drive air duct is communicated with the outlet on the side wall of the convex adaptation part and the inlet on the side wall of the end part.

[0034] As an implementation manner, the gas injection mechanism is disposed opposite to the middle part of the base, so that the injected process gas flows from above the middle part of the base towards the edge of the base.

[0035] As described above, the gas phase growth chamber of the present application has the following beneficial effects:

[0036] In the gas phase growth chamber of the present application, a shaft body is hermetically penetrated through the growth chamber and fixedly disposed in the middle of the base. The top of the shaft body protrudes from the top surface of the base. One side of the tray accommodation cavity provided on the top surface of the base near the top of the shaft body is open; a tray for carrying a substrate is accommodated in the tray accommodation cavity. The first end of the tray is movably disposed on the side wall of the shaft body through the side of the tray accommodation cavity near the top of the shaft body, and the second end is a free end; a tray drive air duct communicated with the tray accommodation cavity is disposed on the base and extends to near the second end, and the bottom surface of the tray shields the opening of the tray drive air duct on the tray accommodation cavity, so that when the flow direction of the process gas provided to the substrate by the gas injection mechanism points from the first end to the second end, a driving gas can be provided through the tray drive air duct to lift the second end relative to the first end, thereby adjusting the depletion trend when the process gas is deposited on the substrate and improving the uniformity of the thickness of the substrate film layer. Description of the Drawings

[0037] Figure 1 It shows a schematic structural diagram of a gas phase growth chamber in the prior art.

[0038] Figure 2 It shows a partial top view structural diagram of a gas phase growth chamber according to Embodiment 1 of the present invention.

[0039] Figure 3 It shows Figure 2 The schematic cross-sectional structural diagram in the non-working state along the A-A' direction in

[0040] Figure 4 It shows Figure 2 The schematic cross-sectional structural diagram in the working state along the A-A' direction in

[0041] Figure 5 It shows Figure 2 The structural diagram of one of the tray accommodation cavities in

[0042] Figure 6 It shows a partial detailed view of the gas phase growth chamber according to Embodiment 1 of the present invention.

[0043] Figure 7Shown is a partial top view structural schematic diagram of another gas phase growth chamber according to Embodiment 1 of the present invention.

[0044] Figure 8 Shown as Figure 7 a cross-sectional structural schematic diagram of the working state along the B-B' direction in

[0045] Figure 9 Shown is a cross-sectional structural schematic diagram of the gas phase growth chamber in the non-working state according to Embodiment 2 of the present invention.

[0046] Figure 10 Shown is a cross-sectional structural schematic diagram of the gas phase growth chamber in the working state according to Embodiment 2 of the present invention.

[0047] Element number description

[0048] 10, growth chamber; 20, gas injection mechanism; 30, base; 40, substrate; 50, heating mechanism; 100, base; 110, tray accommodation cavity; 120, tray drive air duct; 121, main air duct; 122, branch air duct; 123, tray drive air duct opening; 130, spacer area; 200, shaft body; 210, top of the shaft body; 211, convex fitting part; 300, tray; 301, first end; 302, second end; 310, self-rotation drive air duct; 311, self-rotation drive main air duct; 312, self-rotation drive branch air duct; 400, substrate accommodation cavity; 500, substrate; 600, counterbore; 3011, end side wall. Detailed implementation manners

[0049] The following uses specific specific examples to illustrate the implementation manners of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation manners. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0050] Please refer to Figures 1 to 10 . It should be noted that the diagrams provided in this embodiment only illustrate the basic concept of the present invention in a schematic manner. Therefore, only the components related to the present invention are shown in the diagrams, rather than being drawn according to the number, shape, and size of the components in actual implementation. The types, quantities, and ratios of the components in actual implementation can be arbitrarily changed, and the component layout type may also be more complex.

[0051] Figure 1Shown is a vapor growth chamber in the prior art, including a growth chamber 10, a gas injection mechanism 20, a pedestal 30, and a heating mechanism 50. Specifically, the gas injection mechanism 20 is disposed at the top of the growth chamber 10 and extends toward the middle of the pedestal 30 disposed in the growth chamber 10; the substrate 40 is arranged around the middle of the pedestal 30; the process gas provided by the gas injection mechanism 20 can flow through the substrate 40 in a laminar flow manner after being ejected, so as to realize the growth of the film layer on the substrate 40; the heating mechanism 50 is disposed below the pedestal 30 and is used to heat the substrate 40 placed on the pedestal 30 to meet the temperature conditions required during the growth process.

[0052] However, since the growth surface of the substrate 40 is approximately parallel to the flow direction of the process gas, and the process gas is close to the surface of the substrate 40, when the gas injection mechanism 20 supplies the process gas, along the oncoming flow direction of the process gas, the process gas reacts while flowing, showing a depletion trend.

[0053] This depletion trend of the process gas has a serious impact on the uniformity and quality of film formation. Specifically, since the concentration of the process gas on the upstream side is relatively high, the deposition rate in this area is relatively fast, which may lead to an excessive film thickness; while on the downstream side, due to the depletion of the process gas, the deposition rate is slow, which may lead to uneven film thickness and reduce the overall quality of film formation.

[0054] In view of the above defects, the present application provides a vapor growth chamber. The following embodiments will be described in detail. Embodiment 1

[0055] This embodiment provides a vapor growth chamber, as Figures 1 to 8 shown, the vapor growth chamber includes a base 100, a shaft body 200, a tray 300, and a gas injection mechanism 20. The growth chamber 10, the gas injection mechanism 20, and the heating mechanism 50 in the vapor growth chamber of this embodiment can be referred to Figure 1 .

[0056] As Figures 3 to 6 shown, the base 100 is disposed in the growth chamber. A tray accommodation cavity 110 with an open top for accommodating the tray 300 is provided at the top of the base 100. The shaft body 200 penetrates the growth chamber in a sealed manner and is fixedly disposed in the middle of the base 100. The top 210 of the shaft body protrudes from the top surface of the base 100. One side wall of the tray accommodation cavity 110 close to the top 210 of the shaft body is open and is communicated with the open top of the tray accommodation cavity 110.

[0057] In some embodiments, the tray receiving cavity 110 is a groove formed in the base 100; the top of the tray receiving cavity 110 is open. Specifically, the top surface of the base 100 is provided with a plurality of radial side walls extending radially along the top surface of the base 100, distributed radially around the shaft body 200, and the adjacent radial side walls and the edge of the base 100 enclose the tray receiving cavity 110, and one side wall of the tray receiving cavity 110 close to the top 210 of the shaft body is open.

[0058] A tray driving air passage 120 is formed inside the base 100, and the tray driving air passage 120 is communicated with the tray receiving cavity 110. A driving gas can be introduced into the tray driving air passage 120 to introduce the gas into the tray receiving cavity 110.

[0059] As Figure 6 shown, the tray 300 is received in the tray receiving cavity 110, including a first end 301 and a second end 302. The first end 301 is the end close to the shaft body 200, and the second end 302 is the end opposite to the first end 301 along the radial direction of the tray receiving cavity 110 (i.e., the direction from the shaft body 200 to the edge of the base 100). Among them, the first end 301 is movably adapted to the top 210 of the shaft body through the open side wall of the tray receiving cavity 110 close to the top 210 of the shaft body. The tray 300 is received in the tray receiving cavity 110 and can move relative to the tray receiving cavity 110, having a certain degree of freedom of movement. In some specific embodiments, the bottom surface of the tray 300 is in contact with the bottom surface of the tray receiving cavity 110, and there are certain gaps between the side surfaces of the tray 300 and the tray receiving cavity 110. The setting of the gaps is necessary to not affect the lifting or lowering of the second end 302 relative to the first end 301 by the driving gas, and when the shaft body 200 is set as a rotatable shaft body, the rotation of the base 100 can make the tray 300 in the tray receiving cavity 110 rotate synchronously and remain stable as necessary.

[0060] In some embodiments, the shaft body 200 penetrates the growth chamber with dynamic sealing and is fixedly arranged in the middle of the base 100. Specifically, a rotary sealing assembly is provided on the part of the shaft body 200 extending outside the growth chamber to drive the shaft body 200 to rotate and ensure the airtightness between the shaft body 200 and the growth chamber. The specific implementation manner is a conventional technical means in the art. In some specific embodiments, the rotary sealing assembly is a magnetic fluid rotary sealing assembly.

[0061] In some embodiments, the rotation speed of the shaft body 200 is controlled not to exceed 100 revolutions per minute. Too high a rotation speed is likely to cause significant displacement or even flying off of the tray 300 and / or the substrate 500 carried by the tray 300 relative to the base 100.

[0062] The tray driving air duct 120 is provided on the base 100, extends below the second end portion 302, and communicates with the tray accommodating cavity 110. The bottom surface of the tray 300 shields the opening of the tray driving air duct 120 on the tray accommodating cavity 110 (i.e., the tray driving air duct opening 123). The tray driving air duct 120 is used to provide driving gas. Increasing the flow rate of the driving gas can cause the second end portion 302 to lift relative to the first end portion 301, so that a first included angle α is formed between the bottom surface of the tray 300 and the bottom of the tray accommodating cavity 110. Reducing the flow rate of the driving gas or stopping introducing the driving gas can cause the second end portion 302 to descend.

[0063] When the incoming flow direction of the process gas provided to the substrate 500 by the gas injection mechanism points from the first end portion 301 to the second end portion 302, the driving gas can be provided through the tray driving air duct 120 to lift the second end portion 302 relative to the first end portion 301, so that the depletion trend of the process gas during deposition on the substrate 500 can be adjusted, and the uniformity of the film layer thickness of the substrate 500 can be improved.

[0064] In this embodiment, the top of the shaft body 210 includes a convex fitting portion 211, and the first end portion 301 includes an end side wall 3011 facing the convex fitting portion 211; at least part of the side wall of the end side wall 3011 is slidably fitted with the side wall of the convex fitting portion 211. When the second end portion 302 lifts relative to the first end portion 301, the end side wall 3011 slides along at least part of the side wall of the convex fitting portion 211, so that the height of the second end portion 302 is higher than the height of the first end portion 301.

[0065] In some embodiments, there is a gap between the end side wall 3011 and the convex fitting portion 211. When the second end portion 302 lifts relative to the first end portion 301, the tray 300 moves towards the convex fitting portion 211, and at least part of the side wall of the end side wall 3011 is slidably fitted with the side wall of the convex fitting portion 211.

[0066] In some embodiments, the side wall shape of the convex fitting portion 211 and the shape of the end side wall 3011 are in a concave-convex fitting relationship. In some specific embodiments, the end side wall 3011 is a concave arc surface, and the convex fitting portion 211 is a convex arc surface, and their radii of curvature are the same.

[0067] In some specific embodiments, the radius of curvature of the concave arc surface is adapted to the thickness of the tray 300, so that when the second end portion 302 lifts relative to the first end portion 301, it is necessary for the tray 300 to move towards the convex fitting portion 211 and at least part of the side wall of the end side wall 3011 to be slidably fitted with the side wall of the convex fitting portion 211.

[0068] In some embodiments, the top surface height of the convex fitting portion 211 is the same as the top surface height of the tray 300.

[0069] In some embodiments, the bottom surface of the convex fitting portion 211 is flush with the bottom surface of the tray 300, and the height difference between the top surface of the convex fitting portion 211 and the top surface of the tray 300 is greater than or equal to 0 and less than 2 cm. Controlling the height difference between the top surface of the convex fitting portion 211 and the top surface of the tray 300 not to exceed 2 cm ensures that the convexity of the top surface of the convex fitting portion 211 does not cause a turbulent flow that is unfavorable to the deposition reaction, so as to ensure the stability of the deposition reaction. Controlling the bottom surface of the convex fitting portion 211 to be flush with the bottom surface of the tray 300 ensures the smooth movement of the tray 300 toward the convex fitting portion 211 after the driving gas is introduced through the tray driving air duct 120.

[0070] In some embodiments, the bottom surface of the tray receiving cavity 110 where the bottom surface of the first end portion 301 is located is flush with the bottom surface of the convex fitting portion 211.

[0071] In some specific embodiments, the spacing does not exceed 0.2 mm.

[0072] In some embodiments, the gas flow rate provided through the tray driving air duct 120 is controlled not to exceed 15 L / min, so that the height by which the second end portion 302 is lifted relative to the first end portion 301 does not exceed 5 mm. If the lifting height is too large, it will significantly block the oncoming process gas flow, causing poor laminar flow or even reverse flow of the process gas.

[0073] In some embodiments, the number of tray receiving cavities 110 is at least 2, and the tray receiving cavities 110 are evenly arranged around the shaft body 200, and the tray driving air duct 120 is in one-to-one correspondence and communication with the tray receiving cavities 110.

[0074] In some specific embodiments, both the tray receiving cavity 110 and the corresponding tray 300 received therein are fan-shaped rings.

[0075] In some embodiments, the other top surfaces of the top surface of the base 100 except the tray receiving cavities 110 are flush with the other top surfaces of the top surface of the tray 300 except the regions for carrying the substrate 500. When the number of both the tray receiving cavities 110 and the corresponding trays 300 received therein is at least 2, the top surfaces of the trays 300 and the top surfaces between adjacent trays 300 are flush, so as to reduce or even avoid the adverse turbulent flow generated by the process gas.

[0076] In some embodiments, one end of the tray driving air duct 120 opens at a portion of the shaft body 200 outside the growth chamber to provide driving gas through the opening. The tray driving air duct 120 extends within the shaft body 200 to the fixed joint of the shaft body 200 and the base 100 (which is located below the top 210 of the shaft body), and then extends into the base 100. It extends radially along the base 100 until it approaches the first end 301 and is located below the tray 300, and then extends towards the bottom surface of the tray receiving cavity 110 until it communicates with the bottom surface of the tray receiving cavity 110.

[0077] In some embodiments, the number of tray receiving cavities 110 is at least two, and the tray driving air ducts 120 communicate with the tray receiving cavities 110 in a one-to-one correspondence. Each tray driving air duct 120 can be independently arranged and ventilated separately, which is beneficial to judge whether it is necessary to lift the second end 302 according to the real-time deposition process, and which specific tray receiving cavity 110 the second end 302 of the tray 300 accommodated therein needs to be lifted.

[0078] In some specific embodiments, an optical detection device is provided on the gas injection device outside the growth chamber to detect the reflectivity of different regions of the film deposited on the substrate 500 in real time to calculate the growth rate, so as to evaluate the uniformity of the film growth on the substrate 500 in real time. The specific implementation method is a conventional technical means in the art.

[0079] In some embodiments, the tray driving air duct 120 includes a main air duct 121 extending within the base 100 in the direction from the first end 301 to the second end 302. The main air ducts 121 are arranged in a one-to-one correspondence with the tray receiving cavities 110 to facilitate independent ventilation control respectively.

[0080] In some embodiments, the main air duct 121 is located below the tray receiving cavity 110.

[0081] In some embodiments, the tray driving air duct 120 further includes at least two branch air ducts 122 located below the second end 302 and communicating with the main air duct 121. Each branch air duct 122 communicates with a tray receiving cavity 110, and the bottom surface of the tray 300 correspondingly accommodated in the tray receiving cavity 110 shields the opening of each branch air duct 122 on the tray receiving cavity 110. By lifting the second end 302 through a plurality of branch air ducts 122, it can act on different regions of the bottom surface of the second end 302 and the nearby tray 300 structure, which is beneficial to the lifting stability.

[0082] During the process of controlling the second end portion 302 to descend relative to the first end portion 301, if there is only one branch airway 122, the descending rate can be controlled by gradually slowing down the flow rate of the driving gas; if there are multiple branch airways 122, the flow rate of the driving gas in each branch airway 122 can be synchronously controlled to slow down, or the ventilation of each branch airway 122 can be sequentially controlled to be closed, or the flow rate of the driving gas can be sequentially controlled to slow down. During the process of controlling the second end portion 302 to ascend relative to the first end portion 301, the principle of flow rate control is the same as above and will not be elaborated here.

[0083] In some embodiments, when the number of tray accommodation cavities 110 is at least 2, the area between adjacent tray accommodation cavities 110 is an interval area 130, and the main airway 121 extends in the base 100 below the interval area 130. By arranging the main airway 121 in this way, the main airway 121 is not located directly below the tray 300. For some deposition reactions with high temperature control requirements, such as the MOCVD process, it is possible to reduce or avoid the adverse effect of the airway arranged in the base 100 on the temperature uniformity of the substrate 500.

[0084] In some embodiments, the main airway 121 is located below the tray accommodation cavity 110, and by controlling the temperature of the driving gas introduced, it is possible to reduce or avoid the adverse effect of the introduction of the driving gas on the temperature uniformity of the base 100, the tray 300, and even the substrate 500.

[0085] In some embodiments, the number of main airways 121 is less than the number of tray accommodation cavities 110. By reducing the number of main airways 121, it is possible to reduce or avoid the adverse effect of the introduction of the driving gas on the temperature uniformity of the base 100, the tray 300, and even the substrate 500.

[0086] In some embodiments, it is also possible to reduce the number of branch airways 122 by regulating the branch airways 122 to reduce or avoid the adverse effect of the introduction of the driving gas on the temperature uniformity of the base 100, the tray 300, and even the substrate 500. Specifically, when the number of tray accommodation cavities 110 is at least 2, at least two branch airways 122 are connected to one main airway 121. Among adjacent tray accommodation cavities 110, each tray accommodation cavity 110 communicates with at least one branch airway 122, and the bottom surface of the corresponding tray 300 accommodated shields the opening of the corresponding branch airway 122 on the tray accommodation cavity 110.

[0087] In an alternative embodiment, as Figure 3 and Figure 4 shown, the tray driving airway 120 includes a plurality of main airways 121. The main airways 121 are opened inside the base 100, and the opening direction is parallel to the lower surface of the base 100, that is, the direction of gas flow in the main airway 121 is parallel to the lower surface of the base 100.

[0088] For each main airway 121, a branch airway 122 communicating therewith is provided, and an air outlet (i.e., the tray drive airway opening 123) is correspondingly provided at the outlet of each branch airway 122. That is, the tray drive airway 120 includes a plurality of airways, and each airway includes a main airway 121, a branch airway 122, and an air outlet. The branch airway 122 is opened inside the base 100, and the opening direction can be perpendicular to the opening direction of the main airway 121, or there is a certain included angle with the opening direction of the main airway 121.

[0089] In an alternative embodiment, the tray drive airway 120 includes a main airway 121 and a plurality of branch airways 122. The main airway 121 is opened inside the base 100, and the opening direction is parallel to the lower surface of the base 100. The outlet of the main airway 121 communicates with the inlets of the plurality of branch airways 122. An air outlet (i.e., the tray drive airway opening 123) is correspondingly provided at the outlet of each branch airway 122. That is, the gas medium flows through the main airway 121 and then flows to each branch airway 122 respectively, and then flows into the tray accommodation cavity 110 through each air outlet communicating with the branch airway 122.

[0090] In an alternative embodiment, as Figure 2 shown, the shape of the base 100 can be cylindrical, and a plurality of fan-shaped tray accommodation cavities 110 are provided inside the base 100. Each fan-shaped tray accommodation cavity 110 has the same center of the circle, that is, the center of the circle of the base 100. A tray 300 is provided in each tray accommodation cavity 110. The shape of the tray 300 is adapted to the shape of the tray accommodation cavity 110. The first end of the tray 300 is defined as the end close to the center of the circle of the base 100, and the second end of the tray 300 is defined as the end far from the center of the circle of the base 100.

[0091] The tray drive airway 120 includes a main airway 121, a branch airway 122, and an air outlet (i.e., the tray drive airway opening 123). The main airway 121 and the branch airway 122 are both opened inside the base 100. The opening direction of the main airway 121 is parallel to the lower surface of the base 100, that is, the flowing direction of the gas medium in the main airway 121 is parallel to the lower surface of the base 100. The branch airway 122 communicates with the main airway 121. The air outlet communicates with the branch airway 122, and the air outlet is opened on the surface of the base 100 close to the tray 300, that is, the bottom surface of the tray accommodation cavity 110. Along the direction from the first end to the second end of the tray 300, the orthographic projection of the part between the middle of the tray 300 and the second end of the tray 300 on the base 100 completely covers the air outlet.

[0092] In an alternative embodiment, within the base 100, corresponding to the region of each tray receiving cavity 110, a main air duct 121 and a plurality of branch air ducts 122 are respectively provided. The inlets of the plurality of branch air ducts 122 are all communicated with the outlet of the main air duct 121, and an air outlet (i.e., the tray driving air duct opening 123) is respectively provided corresponding to the outlet of each branch air duct 122.

[0093] In an alternative embodiment, taking two adjacent tray receiving cavities 110 as a group, corresponding to the region of one of the tray receiving cavities 110 in the base 100 in each group, a main air duct 121 is provided within the base 100; and corresponding to the region of each tray receiving cavity 110 in the base 100 in each group, at least one branch air duct 122 is respectively provided within the base 100. The inlets of each branch air duct 122 are all communicated with the outlet of the main air duct 121. The number of branch air ducts 122 in the region corresponding to each tray receiving cavity 110 in the base 100 may be equal or unequal; an air outlet (i.e., the tray driving air duct opening 123) is provided corresponding to the outlet of each branch air duct 122, and the air outlet is opened at the bottom of the tray receiving cavity 110.

[0094] In an alternative embodiment, taking two adjacent tray receiving cavities 110 as a group, corresponding to the region of the middle position of each group of tray receiving cavities 110 in the base 100, a main air duct 121 is provided within the base 100; corresponding to the region of each tray receiving cavity 110 in the base 100 in each group, at least one branch air duct 122 is respectively provided within the base 100. The inlets of each branch air duct 122 are all communicated with the outlet of the main air duct 121. The number of branch air ducts 122 in the region corresponding to each tray receiving cavity 110 in the base 100 may be equal or unequal; an air outlet (i.e., the tray driving air duct opening 123) is respectively provided corresponding to the outlet of each branch air duct 122, and the air outlet is opened at the bottom of the tray receiving cavity 110.

[0095] In an alternative embodiment, as Figure 2 and Figure 7 shown, at least one cylindrical substrate receiving cavity 400 is provided within the tray 300; when a plurality of cylindrical substrate receiving cavities 400 are provided within each tray 300, the centers of the plurality of substrate receiving cavities 400 are located on the same radial line of the tray 300. Specifically, as Figure 2 shown, one cylindrical substrate receiving cavity 400 is respectively provided within each tray 300, and one substrate 500 is respectively placed within each substrate receiving cavity 400. The centers of all the substrate receiving cavities 400 are located on the same concentric circle of the tray receiving cavity 110. As Figure 7 and Figure 8As shown, two cylindrical substrate accommodating cavities 400 are respectively arranged in each tray 300, and one substrate 500 is placed in each substrate accommodating cavity 400. The centers of the two substrate accommodating cavities 400 are located on the same radius of the tray 300; the inner substrate accommodating cavities in all trays 300 are defined as inner-layer substrate accommodating cavities, and the outer substrate accommodating cavities in all trays 300 are defined as outer-layer substrate accommodating cavities. The centers of all the inner-layer substrate accommodating cavities are located on the same concentric circle of the tray accommodating cavity 110, and the centers of all the outer-layer substrate accommodating cavities are located on the same concentric circle of the tray accommodating cavity 110.

[0096] In an alternative embodiment, as Figure 3 , Figure 4 , Figure 7 and Figure 8 shown, a counterbore 600 is provided at the center of the base 100 for arranging the shaft body 200.

[0097] In an alternative embodiment, in the gas injection mechanism 20, the process gas enters from the center of the gas-phase growth chamber and flows parallel to the growth surface of the substrate 500.

[0098] In an alternative embodiment, the base 100 has heat insulation properties, thereby reducing the influence on the temperature uniformity of the tray 300 after the gas is introduced into the tray driving air duct 120. To further reduce the influence on the temperature uniformity of the tray 300 after the gas is introduced into the tray driving air duct 120, for example: the material of the base 100 can be graphite hard felt, and graphite felts with different heat insulation effects can be selected according to different requirements of the material growth temperature; the graphite felt can be selected with surface coatings such as pyrolytic carbon and silicon carbide according to different growth materials; machining such as making steps, digging holes, and arc surfaces can also be performed on the graphite felt according to needs to cooperate with the design of the growth temperature zone.

[0099] In an alternative embodiment, the gas in the tray driving air duct 120 is selected from one or more of nitrogen, argon, and hydrogen. Embodiment Two

[0100] This embodiment also provides a gas-phase growth chamber. As Figure 9 and Figure 10 shown, the difference between this embodiment and Embodiment One is that:

[0101] As Figure 9 and Figure 10 shown, a self-rotation driving air duct 310 is communicated below the substrate accommodating cavity 400 provided on the top surface of the tray 300. The substrate accommodating cavity 400 is used to accommodate the substrate 500 to define the position of the substrate 500 relative to the tray 300.

[0102] The substrate accommodation cavity 400 is a groove formed on the top surface of the tray 300. A self-rotation driving air channel 310 is provided in the tray 300. The self-rotation driving air channel 310 is provided on the shaft body 200, extends into the tray 300 through the side wall of the convex matching portion 211 of the shaft body 200, and communicates with the substrate accommodation cavity 400 to provide self-rotation driving gas to make the substrate 500 rotate relative to the tray 300.

[0103] In some specific embodiments, one end of the self-rotation driving air channel 310 opens at the part of the shaft body 200 located outside the growth chamber to provide self-rotation driving gas through this opening. The self-rotation driving air channel 310 extends in the shaft body 200 to the top 210 of the shaft body and then extends into the base 100 through the convex matching portion 211, extends along the radial direction of the base 100 until it is located below the substrate accommodation cavity 400, and then extends towards the bottom surface of the substrate accommodation cavity 400 until it communicates with the substrate accommodation cavity 400.

[0104] A plurality of rotation driving air grooves communicating with the opening of the self-rotation driving air channel 310 on the bottom surface of the substrate accommodation cavity 400 are formed on the bottom surface of the substrate accommodation cavity 400. The self-rotation driving gas enters each rotation driving air groove through the self-rotation driving air channel 310 to drive the substrate 500 to rotate relative to the tray 300. The specific implementation manner of the plurality of rotation driving air grooves is a conventional technical means in the art.

[0105] In some embodiments, at least part of the side wall of the end side wall 3011 is slidably attached to the side wall of the convex matching portion 211, and the outlet of the self-rotation driving air channel 310 located on the convex matching portion 211 communicates with the inlet located on the end side wall 3011. During the process of the second end 302 lifting relative to the first end 301, the outlet of the self-rotation driving air channel 310 located on the side wall of the convex matching portion 211 communicates with the inlet located on the end side wall 3011 to ensure the effective transmission of the self-rotation driving gas and the effective driving of the substrate 500 to rotate.

[0106] In some embodiments, there is a gap between the end side wall 3011 and the convex matching portion 211, and the outlet of the self-rotation driving air channel 310 located on the side wall of the convex matching portion 211 is opposite to the inlet located on the end side wall 3011 to ensure the effective transmission of the gas in the self-rotation driving air channel 310 and the effective driving of the substrate 500 to rotate. When the second end 302 rises relative to the first end 301, the outlet of the self-rotation driving air channel 310 located on the side wall of the convex matching portion 211 communicates with the inlet located on the end side wall 3011 to ensure the effective transmission of the self-rotation driving gas and the effective driving of the substrate to rotate.

[0107] In an alternative embodiment, the rotation driving air duct 310 includes a rotation driving main air duct 311 and a rotation driving branch air duct 312. The rotation driving main air duct 311 is the main air duct provided on the tray 300, and its extension is along the radial direction of the tray 300. In some specific embodiments, the extension direction of the rotation driving main air duct 311 is parallel to the upper surface or the lower surface of the tray 300, that is, the direction of the gas flow therein is parallel to the upper surface or the lower surface of the tray 300.

[0108] In some embodiments, the opening direction of the rotation driving branch air duct 312 is perpendicular to the direction of the rotation driving main air duct 311 or there is a certain included angle between the two, and there are at least two rotation driving branch air ducts 312. The distribution positions among the multiple rotation driving branch air ducts 312 can be symmetric about the center of the substrate 500 to enable the substrate 500 to achieve a better rotation effect. The inlet of each rotation driving branch air duct 312 is communicated with the outlet of the rotation driving main air duct 311.

[0109] In an alternative embodiment, the gas in the rotation driving air duct 310 is selected from one or more of nitrogen, argon, and hydrogen.

[0110] The above embodiments are only illustrative of the principles and effects of the present invention, and are not used to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A vapor growth chamber, characterized in that: include: Growth chambers; A base is arranged in the growth chamber and has a tray accommodating chamber with an open top surface on the top; A shaft body, which is sealed and passes through the growth chamber and is fixedly arranged in the middle of the base, the top of the shaft body protrudes from the top surface of the base, and the tray accommodating cavity has a side wall opening close to the top of the shaft body and is connected with the top surface opening of the tray accommodating cavity; A tray, used for carrying a substrate, and contained in the tray containing cavity, wherein the tray comprises a first end and a second end radially opposite to each other along the tray containing cavity, wherein the first end is movably adapted to the top of the shaft body through an opening of a side wall of the tray containing cavity close to the top of the shaft body; A gas injection mechanism, disposed in the growth chamber, for injecting a process gas and allowing the process gas to flow through the substrate, wherein the flow direction of the process gas flowing through the substrate is directed from the first end to the second end; a tray driving air passage, provided on the base, extending to below the second end portion and communicating with the tray accommodating cavity, wherein the bottom surface of the tray shields an opening of the tray driving air passage on the tray accommodating cavity, and the tray driving air passage is used to provide driving gas to lift the second end portion relative to the first end portion; The top of the shaft body includes a protruding adapter portion, and the first end portion includes an end side wall facing the protruding adapter portion; The end side wall is slidably fitted with at least a portion of the side wall of the protruding adapter; or, There is a distance between the end side wall and the protruding adapter portion. When the second end portion is lifted relative to the first end portion, the tray moves toward the protruding adapter portion and makes the end side wall slide and fit with at least part of the side wall of the protruding adapter portion.

2. The vapor growth chamber according to claim 1, characterized in that: The height difference between the top surface of the protruding adapter and the top surface of the tray is greater than or equal to 0 and less than 2 cm, and the bottom surface of the area between the protruding adapter and the corresponding tray receiving cavity is flush with the bottom surface of the tray receiving cavity.

3. The vapor growth chamber according to claim 1, characterized in that: The spacing does not exceed 0.2 mm.

4. The vapor growth chamber according to claim 1, characterized in that: The shape of the side wall of the protruding adapter portion is in a concave-convex fitting relationship with the shape of the end side wall.

5. The vapor growth chamber according to claim 1, characterized in that: The gas flow rate provided by the tray driving air channel is controlled to be no more than 15 liters / minute, so that the height of the second end portion raised relative to the first end portion does not exceed 5 mm.

6. The vapor growth chamber according to claim 1, characterized in that: The shaft body passes through the growth chamber with a dynamic seal and is fixedly arranged in the middle of the base to drive the base to rotate. The rotation speed of the shaft body is controlled to be no more than 100 revolutions per minute.

7. The vapor growth chamber according to claim 1, characterized in that: The number of the tray accommodating cavities is at least 2, and the tray accommodating cavities are evenly arranged around the shaft body, and the tray driving air passages are connected to the tray accommodating cavities in a one-to-one correspondence.

8. The vapor growth chamber according to claim 7, characterized in that: The tray accommodating cavity and the corresponding accommodated tray are both fan-shaped.

9. The vapor growth chamber according to claim 1, characterized in that: The other top surfaces of the base top surface except the tray receiving cavity are flush with the other top surfaces of the tray top surface except the area for supporting the substrate.

10. The vapor growth chamber according to claim 1, characterized in that: The tray driving air channel also extends into the shaft body and extends outside the growth chamber through the shaft body.

11. The vapor growth chamber according to claim 1, characterized in that: The tray driving air channel includes a main air channel extending in the base from the first end to the second end, and the main air channels are arranged in a one-to-one correspondence with the tray accommodating cavities, or the number of the main air channels is less than the number of the tray accommodating cavities.

12. The vapor growth chamber according to claim 11, characterized in that: The tray drive air channel further includes at least two branch air channels located below the second end and connected to the main air channel; Each of the branch air passages is connected to a tray accommodating cavity, and the bottom surface of the tray corresponding to the tray accommodating cavity shields the opening of each of the branch air passages on the tray accommodating cavity; or, When the number of the tray accommodating cavities is at least 2, in the adjacent tray accommodating cavities, each of the tray accommodating cavities is communicated with at least one branch air passage, and the bottom surface of the corresponding accommodated tray shields the opening of the corresponding branch air passage on the tray accommodating cavity.

13. The vapor growth chamber according to claim 11, characterized in that: The main air channel is located below the tray receiving cavity; or, when the number of the tray receiving cavities is at least 2, the area between adjacent tray receiving cavities is a spacing area, and the main air channel extends in the spacing area.

14. The vapor growth chamber according to claim 1, characterized in that: The top surface of the tray is provided with a substrate accommodating cavity for accommodating the substrate to limit the position of the substrate relative to the tray. The shaft body is provided with a self-rotation driving air channel, which extends into the tray through the side wall of the raised adapter portion of the shaft body and is connected with the substrate accommodating cavity to provide self-rotation driving gas to enable the substrate to rotate relative to the tray.

15. The vapor growth chamber according to claim 14, characterized in that: The end side wall is slidably fitted with at least a portion of the side wall of the protruding adapter portion, and the outlet of the self-rotation driving airway located on the side wall of the protruding adapter portion is communicated with the inlet located on the end side wall; When the second end portion is lifted relative to the first end portion, the outlet of the self-rotation driving air passage located on the side wall of the protruding adapter portion communicates with the inlet located on the side wall of the end portion.

16. The vapor growth chamber according to claim 14, characterized in that: There is the spacing between the end side wall and the protruding adapter portion, and the outlet of the self-rotation driving airway located on the side wall of the protruding adapter portion is opposite to the inlet located on the end side wall; When the second end portion is lifted relative to the first end portion, the outlet of the self-rotation driving air passage located on the side wall of the protruding adapter portion communicates with the inlet located on the side wall of the end portion.

17. The vapor growth chamber according to claim 1, characterized in that: The gas injection mechanism is arranged opposite to the middle of the base, so that the injected process gas flows from above the middle of the base toward the edge of the base.

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