Circuit structure of Hall current sensor chip and Hall current sensor chip

Abstract

The invention provides a circuit structure of a Hall current sensor chip and the Hall current sensor chip. The circuit structure comprises a Hall element, an amplifier, a first comparator, a second comparator and a programmer, the Hall element is used for sensing the detection current and generating a voltage signal related to the detection current; the amplifier is used for amplifying the voltage signal; the first comparator is used for comparing the amplified voltage signal with a reference source, judging signal integrity and generating a comparison signal; the second comparator is used for comparing the comparison signal with a reference signal, judging the signal amplitude and generating an output signal; and the programmer is used for adjusting the output sensitivity and / or the static output voltage. The circuit has the technical effects that the output precision is improved, the output stability is improved, the circuit structure complexity is reduced, and the output sensitivity and / or the static output voltage are / is adjustable, so that the product performance is improved and the cost is reduced in final application.

Description

Technical Field

[0001] The present application relates to the technical field of current sensors, and in particular to a circuit structure of a Hall current sensor chip and a Hall current sensor chip. Background Art

[0002] With the rise of electric vehicles and electric cars, charging piles and charging guns are gradually becoming familiar to the public. Current sensors are responsible for detecting the current size of charging piles and charging guns, and always protecting the safety of charging guns and charging piles. The current sensor converts the pulse signal of the current into a quantifiable voltage or frequency signal, and can accurately measure the current over a large range regardless of direct current or alternating current. The current sensor itself has a strong isolation function and will not transmit the noise from DC or AC to the detection signal. In the automotive battery management system BMS, the detection of the capacity of the power battery pack, the size of the charge / discharge current and the charge / discharge process all require precise monitoring. In the new energy market, current sensors also have extremely broad applications and demands in solar energy, photovoltaics, charging, inverters, energy storage and other links.

[0003] Current sensors are divided into more than a dozen types, including resistance shunts, current transformers, Hall current sensors, fluxgate current sensors, Rogowski coils, giant magnetoresistance current sensors, and fiber optic current sensors.

[0004] The Hall current sensor works based on the Hall effect principle and is a commonly used current sensor. Hall current sensors include open-loop and closed-loop types. The open-loop Hall current sensor uses the Hall direct amplification principle, while the closed-loop Hall current sensor uses the magnetic balance principle. Generally, the open-loop type is suitable for large current monitoring, while the closed-loop type is suitable for small current monitoring.

[0005] refer to Figure 1 , shows the basic working principle of the open-loop Hall current sensor. When an AC or DC current (Ip) passes through a wire, a magnetic field is generated around it, and the magnitude of this magnetic field is proportional to the strength of the current; the generated magnetic field is gathered in the magnetic ring, and is measured and amplified by the Hall element in the air gap of the magnetic ring; the output voltage VS of the Hall element accurately reflects the primary current Ip. The signal output by the Hall element reflects the strength and direction of the AC or DC current. By measuring the output signal of the Hall element, the magnitude of the AC or DC current passing through the wire can be accurately measured.

[0006] refer to Figure 2 , shows the basic working principle of the closed-loop Hall current sensor. The closed-loop Hall current sensor adopts the magnetic balance principle and is a compensation sensor. Figure 1 The difference is that Figure 2The magnetic field generated by the primary current Ip at the magnetic ring is compensated by the magnetic field generated by a secondary coil current, and its compensation current Is accurately reflects the primary current Ip, so that the Hall device is in a working state of detecting zero magnetic flux. The specific working process is: when a current Ip passes through the main circuit, the magnetic field generated on the wire is gathered by the magnetic ring and induced to the Hall element, and the generated signal output is used to drive the power tube and turn it on, thereby obtaining a compensation current Is; this current Is then passes through the secondary coil multi-turn winding to generate a magnetic field, which is exactly opposite to the magnetic field generated by the measured current Ip, thereby compensating the original magnetic field. At this time, the Hall device plays the role of indicating zero magnetic flux, and Ip can be tested by Is at this time. Generally, a measuring resistor is used to convert the current Is into a voltage, and the output signal is a voltage signal.

[0007] refer to Figure 3 , shows a functional module diagram of an existing ACS712 Hall current sensor chip. It includes a high-sensitivity Hall sensor, a Hall signal pre-amplifier, a high-precision Hall temperature compensation unit, an oscillator, a dynamic offset elimination circuit, and an amplifier output module. As an open-loop Hall current sensor, the ACS712 provides an affordable and accurate solution for AC or DC current measurement in industrial, commercial, and communication systems.

[0008] The applicant has found that how to provide a Hall current sensor chip with higher precision and simpler structure is still a technical problem that the industry urgently needs to solve. Summary of the invention

[0009] The present application proposes a circuit structure of a Hall current sensor chip and a Hall current sensor chip.

[0010] In a first aspect, the present application provides a circuit structure of a Hall current sensor chip, comprising: a Hall element, an amplifier connected to the Hall element, a first comparator connected to the amplifier, a second comparator connected to the first comparator, and a programmer connected to the second comparator;

[0011] The Hall element is used to sense the detection current and generate a voltage signal related to the detection current;

[0012] The amplifier is used to amplify the voltage signal to reach a set sensitivity requirement, and output the amplified voltage signal to the first comparator;

[0013] The first comparator is used to compare the amplified voltage signal with a reference source, determine the integrity of the voltage signal, and output a corresponding comparison signal to the second comparator;

[0014] The second comparator is used to compare the comparison signal with a reference signal, determine the amplitude of the comparison signal, and generate a corresponding output signal;

[0015] A programmer is used to adjust the output sensitivity and / or static output voltage of the second comparator.

[0016] In some optional embodiments, the device further comprises: a conductor circuit, a first voltage regulator, a second voltage regulator, and a temperature sensor;

[0017] The conductor circuit is used as a flow path for the detection current;

[0018] The first voltage regulator is used to provide a first power supply voltage to the Hall element, the amplifier, the first comparator, the second comparator and the temperature sensor, and adjust the first power supply voltage according to a temperature compensation signal provided by the temperature sensor;

[0019] A second voltage regulator, used for providing a second power supply voltage to the programmer;

[0020] The temperature sensor is used to provide a temperature compensation signal to the first voltage stabilizer, and control the first voltage stabilizer to stop providing the power supply voltage when the working environment temperature exceeds a set range.

[0021] In some optional embodiments, the Hall element includes a first Hall element and a second Hall element, and the voltage signal is a differential voltage signal, and the differential voltage signal includes: a high level signal generated by the first Hall element, and a low level signal generated by the second Hall element.

[0022] In some optional implementations, the amplifier includes:

[0023] A first amplifier, connected between the first Hall element and the first comparator, for amplifying the high-level signal;

[0024] The second amplifier is connected between the second Hall element and the first comparator, and is used to amplify the low-level signal.

[0025] In some optional implementations, the reference source used by the first comparator is a previous stage complete signal, and the first comparator is further used to:

[0026] Comparing the amplified high-level signal with a reference source, determining signal integrity, identifying signal correctness, and outputting a first comparison signal; and

[0027] The amplified low-level signal is compared with a reference source to determine signal integrity, identify signal correctness, and output a second comparison signal.

[0028] In some optional implementations, the reference signal used by the second comparator includes:

[0029] a first comparison signal from the programmer; and / or

[0030] A second reference signal is generated by dividing the second comparison signal by a voltage-dividing capacitor.

[0031] In some optional implementations, when the refresh rate and amplitude of the first reference signal are both greater than those of the second reference signal, the second comparator uses the first reference signal to compare with the first comparison signal to generate the output signal.

[0032] In some optional implementations, when the program has not been burned into the programmer, the second comparator uses the second reference signal to compare with the first comparison signal to generate the output signal.

[0033] In some optional implementations, the adjustable range of the static output voltage is 2.5V±0.2V or 50% of the power supply voltage, and the adjustable range of the output sensitivity is 1.8-30mV / Gs.

[0034] In a second aspect, the present application provides a Hall current sensor chip, comprising the circuit structure of the Hall current sensor chip as described in the first aspect.

[0035] As mentioned above, the present application proposes a circuit structure of a Hall current sensor chip. The present application uses two comparators to perform two-level comparison output, the upper level judges the signal integrity, the lower level judges the signal amplitude, and is provided with a programmer to adjust the output sensitivity and / or static output voltage. The technical effects achieved include but are not limited to: reducing dynamic offset, improving anti-interference ability, improving output accuracy, improving output stability, adjusting output sensitivity and / or static output voltage, and reducing structural complexity, thereby improving product performance and reducing costs in the final application. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Other features, objects and advantages of the present application will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings:

[0037] Figure 1 This is a schematic diagram of the basic working principle of an open-loop Hall current sensor;

[0038] Figure 2 This is a schematic diagram of the basic working principle of a closed-loop Hall current sensor;

[0039] Figure 3This is a functional module diagram of an existing ACS712 Hall current sensor chip;

[0040] Figure 4 is a structural schematic diagram of an embodiment of a circuit structure of a Hall current sensor chip according to the present application;

[0041] Figure 5 yes Figure 4 A schematic diagram of a process circuit corresponding to the circuit structure shown;

[0042] Figure 6 It is a structural schematic diagram of an application circuit of a circuit structure of a Hall current sensor chip according to the present application;

[0043] Figure 7-Figure 9 This is a process structure diagram generated according to the proprietary circuit of the Hall current sensor chip of this application. DETAILED DESCRIPTION

[0044] The present application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the relevant invention, rather than to limit the invention. It should also be noted that, for ease of description, only the parts related to the relevant invention are shown in the accompanying drawings.

[0045] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating directions or positional relationships, are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", and "third" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0046] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", etc. should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0047] In the description of the present application, it should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other.

[0048] refer to Figure 4 , Figure 4The present invention discloses a circuit structure of a Hall current sensor chip (hereinafter referred to as the circuit structure). The circuit structure is designed based on the principle of a closed-loop Hall current sensor.

[0049] like Figure 4 As shown, the circuit structure of the Hall current sensor chip of the present application includes: a Hall element, an amplifier connected to the Hall element, a first comparator U10 connected to the amplifier, a second comparator U11 connected to the first comparator U10, and a programmer U2 connected to the second comparator U11. Among them, the Hall element can further include a first Hall element U3 and a second Hall element U4, and the amplifier can further include a high-precision first amplifier U5 and a second amplifier U6.

[0050] Here, the Hall element is used to sense the detection current and generate a voltage signal related to the detection current. Optionally, the voltage signal can be a differential voltage signal, including two paths, one of which is a high-level signal and the other is a low-level signal. Among them, the high-level signal can be generated by the first Hall element U3 by sensing the detection current, and the low-level signal can be generated by the second Hall element U4 by sensing the detection current.

[0051] Here, the amplifier is used to amplify the voltage signal to meet the set sensitivity requirement, and output the amplified voltage signal to the first comparator U10. The two voltage signals can be amplified by the first amplifier U5 and the second amplifier U6 respectively. For example, the first amplifier U5 is connected between the first Hall element U3 and the first comparator U10 to amplify the high-level signal; the second amplifier U6 is connected between the second Hall element U4 and the first comparator U10 to amplify the low-level signal.

[0052] Here, the first comparator U10 is used to compare the amplified voltage signal with the reference source, determine the integrity of the voltage signal, and output a corresponding comparison signal to the second comparator U11. The amplified high-level signal can be compared with the reference source to output a first comparison signal; and the amplified low-level signal can be compared with the reference source to output a second comparison signal.

[0053] Here, the second comparator U11 is used to compare the comparison signal output by the first comparator U10 with the reference signal, determine the amplitude of the comparison signal, and generate a corresponding output signal.

[0054] Here, the programmer U2 is used to adjust the output sensitivity and / or static output voltage of the second comparator U11. The programmer U2 can program the output sensitivity range to determine the final required sensitivity value.

[0055] In some optional implementations, the circuit structure further includes: a conductor circuit U8, a first voltage regulator U1, a second voltage regulator U7 and a temperature sensor U9.

[0056] The conductor circuit U8 is used as a flow path for detecting current, and has two ports, namely Ip+ and Ip-, which can also be recorded as a positive input terminal DC+ and a negative output terminal DC- when it is direct current.

[0057] The first voltage regulator U1 is connected to Vcc (positive power supply voltage, for example, +5V), and is used to provide a first power supply voltage to the Hall element, amplifier, first comparator U10, second comparator U11 and temperature sensor U9, and adjust the first power supply voltage according to the temperature compensation signal provided by the temperature sensor U9.

[0058] The second voltage regulator U7 is connected to Vcc (positive power supply voltage, such as +5V) and is used to provide a variable second power supply voltage to the programmer U2. For example, the output voltage of U7 can be changed to provide a 1.8V power supply voltage to the programmer U2.

[0059] The temperature sensor U9 is used to provide a temperature compensation signal to the first voltage regulator U1, and control the first voltage regulator U1 to stop providing the power supply voltage when the working environment temperature exceeds the set range. Exemplarily, the temperature sensor U9 can provide a temperature rise curve in the range of -40°C to 150°C, which reflects the relationship between the ambient temperature and the power supply voltage / output sensitivity, and can provide a temperature compensation signal corresponding to the temperature.

[0060] In some optional embodiments, the wire circuit U8 is formed on a wafer, and its performance and area are determined by the material produced by the wafer.

[0061] In some optional embodiments, the reference source used by the first comparator U10 is the complete signal of the previous level. The first comparator U10 is further used to compare the two amplified voltage signals with the reference source respectively, judge the integrity of the two voltage signals, identify whether the two voltage signals are correct, thereby judging the current conversion of the Ip+ / Ip- wires, and then determining whether the AH371x is stable or the chip is defective. Specifically, the first comparator can be further used to: compare the amplified high-level signal with the reference source, judge the signal integrity, identify the signal correctness, and output the first comparison signal, that is, the signal Si1 input to the pin 1 of the second comparator U11; and compare the amplified low-level signal with the reference source, judge the signal integrity, identify the signal correctness, and output the second comparison signal.

[0062] In some optional embodiments, the reference signal used by the second comparator may include: a first reference signal from the programmer U2, i.e., signal SI0 output from pin 7 of the programmer U2, which first reference signal can be input to pin 3 of the second comparator U11; and / or, a second reference signal generated by the second comparison signal after voltage division by a voltage divider capacitor, i.e., signal Si2 input to pin 3 of the second comparator U11.

[0063] In some optional implementations, when the refresh rate and amplitude of the first reference signal are greater than those of the second reference signal, the second comparator U11 compares the first reference signal with the first comparison signal to generate an output signal.

[0064] In some optional implementations, when the program is not burned into the programmer U2, the second comparator U11 compares the second reference signal Si2 with the first comparison signal Si1 to generate an output signal Si.

[0065] In some optional implementations, the magnitude of the second reference signal may be adjusted according to the value of C3.

[0066] In some optional implementations, the second reference signal is a square wave signal between 0.1-0.7 V. This signal can be used as a reference signal for U11, but the square wave signal is unstable, and in some cases U11 tends to ignore the square wave signal as a noise signal.

[0067] In some optional implementations, the first reference signal is a high level close to a straight line, and the conductive sheet can be a frequency signal amplified by a transistor amplifier. When selecting a transistor, there will be a frequency requirement, which is usually higher than the frequency of the voltage-dividing capacitor C3. When the transistor amplifier provides a high level with a refresh rate higher than the voltage-dividing capacitor C3 and an amplitude greater than the voltage-dividing capacitor C3, it will be adopted by the second comparator U11 as a more stable low-level reference source. That is, after burning, the straight high level provided by U2 as the first signal will replace the second reference signal generated after voltage division by C3, and will be used as a reference voltage by U11.

[0068] In some optional embodiments, the static output voltage and output sensitivity of the circuit structure of the present application are adjustable, wherein the adjustable range of the static output voltage is 2.5V±0.2V or 50% of the power supply voltage, and the adjustable range of the output sensitivity is 1.8~30mV / Gs.

[0069] In some optional implementations, the first power supply voltage provided by the first voltage regulator U1 for the circuit structure and burning programming includes but is not limited to 5V / 3.3V / 1.8V.

[0070] In some optional embodiments, the first Hall element U3 and the second Hall element U4 sense the current size and strength of the Ip+ / Ip- conductor circuit U8, and output high-level signals and low-level signals, both of which are mV digital signals.

[0071] In some optional implementations, the second comparator U11 may be a high-precision comparator, which determines the final output accuracy after comparing the input of U10, and may operate within the range of -50 degrees to 85 degrees, with obvious low-temperature characteristics.

[0072] In some optional embodiments, the connection relationship of some components in the circuit structure that are not directly marked with a segment connection method is as follows: pin 2 of the temperature sensor U9 is connected to pin 3 of the first regulator U1, and pin 7 of the programmer U2 is connected to pin 3 of the second programmer U11.

[0073] Next, please refer to Figure 5 , Figure 5 yes Figure 4 The circuit structure shown corresponds to a process circuit schematic diagram. Figure 5 and Figure 4 These are two different representations of the circuit structure.

[0074] The above briefly introduces the design circuit of the Hall current sensor chip of the present application. The circuit structure is used to realize the current sensor function, and has the characteristics of enhanced performance, good functional stability, and good anti-interference ability.

[0075] Furthermore, the present application also provides a Hall current sensor chip, including the circuit structure of the Hall current sensor chip as described above. The Hall current sensor chip can be produced using the Bi-BCD (Bipolar-Bipolar-CMOS-DMOS, "bipolar-complementary metal oxide semiconductor-double diffused metal oxide semiconductor) process. The interior of the Hall current sensor chip contains a high-sensitivity Hall element (such as the first Hall element U3 and the second Hall element U4), a high-precision Hall temperature compensation unit (such as a temperature sensor U9), a Hall signal pre-amplifier (such as the first amplifier U5 and the second amplifier U6), and an amplifier output module (such as the first comparator U10 and the second comparator U11); optionally, it can also include an oscillator (for providing a clock signal for the chip, etc.), a dynamic offset elimination circuit, etc. The Hall current sensor chip can provide customers with a more effective AC / DC (alternating current / direct current) current detection solution, and is widely used in communication, industrial and consumer electronic devices.

[0076] The Hall current sensor chip of the present application adopts overcurrent protection high-bandwidth dynamic offset cancellation technology. In the absence of a magnetic field, the static output can be selected as 50% VCC or a fixed value of 2.5V. Furthermore, the internally integrated dynamic offset cancellation circuit can reduce or eliminate the offset voltage, so that the sensitivity of the chip is not affected by external pressure and packaging stress, and the stability and reliability are improved.

[0077] The Hall current sensor chip of the present application has an output voltage that is proportional to the applied magnetic field strength, and the user can program (through a programming module) on the power pin to adjust the chip sensitivity and static (zero field) output voltage, thereby improving product performance in the final application.

[0078] The Hall current sensor chip of the present application has an adjustable static output voltage range of 2.5V±0.2V or 50% Vcc, and an adjustable output sensitivity range of 1.8 to 30mV / Gs.

[0079] The Hall current sensor chip of the present application can be packaged in TO92S or TO94. TO92S and TO94 are small plug-in packages suitable for a variety of electronic applications, have clear size standards and electrical characteristics, and meet environmental protection requirements.

[0080] In some optional implementations, some electrical performance parameters of the Hall current sensor chip of the present application are shown in the following Table 1. The test conditions are Vcc=5.0V, DC operating parameters (unless otherwise specified), Ta=25°C.

[0081] Table 1

[0082]

[0083] In some optional implementations, some accuracy parameters of the Hall current sensor chip of the present application are shown in Table 2 below, where the test conditions are Vcc=5.0V, DC operating parameters (unless otherwise specified), and Ta=25°C.

[0084] Table 2

[0085]

[0086] In some optional implementations, some programming parameters of the Hall current sensor chip of the present application are shown in Table 3 below, where the test conditions are Vcc=5.0V, DC operating parameters (unless otherwise specified), Ta=25°C.

[0087] Table 3

[0088]

[0089] In some optional embodiments, the Hall current sensor chip of the present application is divided into nearly a hundred specifications according to the detection current size Ip, sensitivity mV / A, current accuracy mV / Gs, accuracy ETOT, response time us, anti-interference ability PSR, impedance mΩ, and bandwidth Hz.

[0090] In some optional embodiments, the Hall current sensor chip of the present application also provides an internally controlled clock mechanism to intermittently power the Hall element and the analog signal processing circuit. The device periodically "wakes up" through internal logic to compare the magnetic flux intensity passing through the Hall element with a predefined threshold. In the "sleep" cycle, the output driver tube will be locked in its previous state.

[0091] refer to Figure 6 The present application also provides an application circuit for the Hall current sensor chip of the present application. The application circuit is a general circuit specially adapted to the chip function of the present application. The general circuit shows the external connection mode of the pins such as Vcc, VOut (output) and Gnd (ground) of the Hall current sensor chip. For details, see Figure 6 , I will not go into details here.

[0092] refer to Figure 7-Figure 9 The figure shows the process structure diagram of the circuit generation of the Hall current sensor chip of the present application, which represents the process level and chip performance of the chip. Figure 7 It is the TOP layer (i.e. top layer) view. Figure 8 Layout of the NWELL layer (i.e., the n-well layer). Fig. 9The POLY layer (i.e., polysilicon layer) is the layout. In the chip, the TOP layer is the top view of the chip, the PWELL layer is the Core device PWELL (core device P well), the NWELL layer is the Core device NWELL (core device N well), the DIFF layer is the Active region (active region), the POLY layer is the Poly gate (polysilicon gate), the PIMP layer is the P+Implant (P-type doping implantation), the NIMP layer is the N+Implant (N-type doping implantation), the SDPW layer is the SD PWELL (shallow P well), the SDNW layer is the SD NWELL (shallow N well), the TGOX layer is the Thick gate oxide (thick gate oxide layer), the DNW layer is the Deep NWELL (deep N well layer), and the SAB layer is the Silicide block (silicide barrier layer), CONT layer is Contact (contact layer), MET1 layer is Metal1 (first metal layer), VIA1 layer is Via1 (first via layer), MET2 layer is Metal2 (second metal layer), VIA2 layer is Via2 (second via layer), MET3 layer is Metal3 (third metal layer), POR layer is Passivation open (passivation opening layer), and MTM layer is MIM capacitor (metal-insulator-metal capacitor).

[0093] In the above, the technical solution of the present application is described in detail through specific embodiments. In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, please refer to the relevant description of other embodiments.

[0094] The above description is only a preferred embodiment of the present application and an explanation of the technical principles used. Those skilled in the art should understand that the scope of the invention involved in the present application is not limited to the technical solution formed by a specific combination of the above technical features, but should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the above invention concept. For example, the above features are replaced with (but not limited to) technical features with similar functions applied in this application.

Claims

1. A circuit structure of a Hall current sensor chip, characterized in that: include: A Hall element, an amplifier connected to the Hall element, a first comparator connected to the amplifier, a second comparator connected to the first comparator, and a programmer connected to the second comparator; The Hall element is used to sense the detection current and generate a voltage signal related to the detection current; The amplifier is used to amplify the voltage signal to reach a set sensitivity requirement, and output the amplified voltage signal to the first comparator; The first comparator is used to compare the amplified voltage signal with a reference source, determine the integrity of the voltage signal, and output a corresponding comparison signal to the second comparator; The second comparator is used to compare the comparison signal with a reference signal, determine the amplitude of the comparison signal, and generate a corresponding output signal; A programmer is used to adjust the output sensitivity and / or static output voltage of the second comparator.

2. The circuit structure of the Hall current sensor chip according to claim 1, characterized in that: Also includes: A conductor circuit, a first voltage regulator, a second voltage regulator, and a temperature sensor; The conductor circuit is used as a flow path for the detection current; The first voltage regulator is used to provide a first power supply voltage to the Hall element, the amplifier, the first comparator, the second comparator and the temperature sensor, and adjust the first power supply voltage according to a temperature compensation signal provided by the temperature sensor; A second voltage regulator, used for providing a second power supply voltage to the programmer; The temperature sensor is used to provide a temperature compensation signal to the first voltage stabilizer, and control the first voltage stabilizer to stop providing the first power supply voltage when the working environment temperature exceeds a set range.

3. The circuit structure of the Hall current sensor chip according to claim 1, characterized in that: The Hall element includes a first Hall element and a second Hall element, the voltage signal is a differential voltage signal, and the differential voltage signal includes: a high level signal generated by the first Hall element, and a low level signal generated by the second Hall element.

4. The circuit structure of the Hall current sensor chip according to claim 3, characterized in that: The amplifier comprises: A first amplifier, connected between the first Hall element and the first comparator, for amplifying the high-level signal; The second amplifier is connected between the second Hall element and the first comparator, and is used to amplify the low-level signal.

5. The circuit structure of the Hall current sensor chip according to claim 4, characterized in that: The reference source used by the first comparator is the complete signal of the previous stage, and the first comparator is further used for: Comparing the amplified high-level signal with a reference source, determining signal integrity, identifying signal correctness, and outputting a first comparison signal; and The amplified low-level signal is compared with a reference source to determine signal integrity, identify signal correctness, and output a second comparison signal.

6. The circuit structure of the Hall current sensor chip according to claim 5, characterized in that: The reference signal used by the second comparator includes: a first reference signal from the programmer; and / or A second reference signal is generated by dividing the second comparison signal by a voltage-dividing capacitor.

7. The circuit structure of the Hall current sensor chip according to claim 6, characterized in that: When the refresh rate and amplitude of the first reference signal are both greater than those of the second reference signal, the second comparator compares the first reference signal with the first comparison signal to generate the output signal.

8. The circuit structure of the Hall current sensor chip according to claim 6, characterized in that: When the program is not burned into the programmer, the second comparator compares the second reference signal with the first comparison signal to generate the output signal.

9. The circuit structure of the Hall current sensor chip according to claim 1, characterized in that: The adjustable range of the static output voltage is 2.5V±0.2V or 50% of the power supply voltage, and the adjustable range of the output sensitivity is 1.8-30mV / Gs.

10. A Hall current sensor chip, characterized in that: A circuit structure comprising a Hall current sensor chip as described in any one of claims 1 to 9.

Images