Reflective display panel and sputtering target material

Abstract

The invention provides a reflective display panel comprising a pixel structure and a sputtering target material. The pixel structure has a reflective region and includes an active element, an insulating layer and a reflective layer. The insulating layer is over the active element. The reflective layer is disposed on the insulating layer and located in the reflective region. The reflective layer includes a silver alloy layer. The material of the silver alloy layer comprises more than 96.5% by atomic percent of silver, more than or equal to 0.1% and less than or equal to 2.0% by atomic percent of zinc and more than or equal to 0.1% and less than or equal to 1.5% by atomic percent of antimony. The invention also provides a sputtering target suitable for depositing a silver alloy layer. The material of the sputtering target material comprises more than 96.5% by atomic percent of silver, more than or equal to 0.1% and less than or equal to 2.0% by atomic percent of zinc and more than or equal to 0.1% and less than or equal to 1.5% by atomic percent of antimony.

Description

Technical Field

[0001] The invention relates to a display panel and a process material, and in particular to a reflective display panel and a sputtering target. Background Art

[0002] Reflective display panels mainly use natural light or ambient light as a light source for display. Since they do not require backlighting for display, they have good energy-saving characteristics. Therefore, they are often used in outdoor or well-lit areas, such as outdoor billboards, electronic tags, sports watches, etc. Considering high reflectivity and low resistivity, silver is the first choice among all metal elements as a reflective layer. However, due to the poor chemical resistance, heat resistance, and weather resistance of silver, as well as its high electrochemical mobility, there are many problems and limitations in the application of silver. Summary of the invention

[0003] The present invention is directed to a reflective display panel, the reflective layer of which has better optical stability and durability.

[0004] The present invention is directed to a sputtering target material, the deposited film layer of which has better heat resistance and weather resistance.

[0005] According to an embodiment of the present invention, a reflective display panel includes a pixel structure, and the pixel structure has a reflective region. The pixel structure includes an active element, an insulating layer and a reflective layer. The insulating layer is located above the active element. The reflective layer is disposed on the insulating layer and in the reflective region, and includes a silver alloy layer. The material of the silver alloy layer includes silver with an atomic percentage greater than 96.5%, zinc with an atomic percentage greater than or equal to 0.1% and less than or equal to 2.0%, and antimony with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%.

[0006] In the reflective display panel according to the embodiment of the present invention, the reflective layer further comprises a protective layer covering the silver alloy layer. The material of the protective layer comprises a light-transmitting conductive material or a light-transmitting insulating material.

[0007] In the reflective display panel according to the embodiment of the present invention, the reflective layer further comprises a buffer layer sandwiched between the insulating layer and the silver alloy layer. The material of the buffer layer comprises a conductive material.

[0008] According to an embodiment of the present invention, the sputtering target is suitable for depositing a silver alloy layer. The material of the sputtering target includes silver with an atomic percentage greater than 96.5%, zinc with an atomic percentage greater than or equal to 0.1% and less than or equal to 2.0%, and antimony with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%.

[0009] According to an embodiment of the present invention, a reflective display panel includes a pixel structure, and the pixel structure has a reflective area. The pixel structure includes an active element, an insulating layer and a reflective layer. The insulating layer is located above the active element. The reflective layer is arranged on the insulating layer and in the reflective area, and includes a silver alloy layer. The material of the silver alloy layer includes silver with an atomic percentage greater than 95% and other elements with an atomic percentage less than or equal to 5%. The other elements include at least one of zinc, antimony and neodymium with an atomic percentage greater than or equal to 0.1% and at least one of indium, tin, palladium and gold with an atomic percentage greater than or equal to 0.1%.

[0010] In the reflective display panel according to an embodiment of the present invention, other elements include zinc with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%, tin with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, antimony with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, at least one of neodymium and indium, and palladium or gold with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%.

[0011] In the reflective display panel according to an embodiment of the present invention, other elements include zinc with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%, tin with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, at least one of antimony and neodymium with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, and palladium or gold with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%.

[0012] In the reflective display panel according to an embodiment of the present invention, other elements include zinc with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%, tin with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, antimony with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, and palladium or gold with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%.

[0013] In the reflective display panel according to an embodiment of the present invention, the pixel structure further includes a pixel electrode and another insulating layer. The pixel electrode is arranged above the reflective layer. The pixel electrode overlaps the reflective layer. The other insulating layer is sandwiched between the pixel electrode and the reflective layer.

[0014] In the reflective display panel according to the embodiment of the present invention, the reflective layer further comprises a protective layer, which covers the silver alloy layer, and is made of a light-transmitting conductive material or a light-transmitting insulating material.

[0015] In the reflective display panel according to the embodiment of the present invention, the reflective layer further comprises a buffer layer sandwiched between the insulating layer and the silver alloy layer. The material of the buffer layer comprises a conductive material.

[0016] According to an embodiment of the present invention, the sputtering target is suitable for depositing a silver alloy layer. The material of the sputtering target includes silver with an atomic percentage greater than 95% and other elements with an atomic percentage less than or equal to 5%, and the other elements include at least one of zinc, antimony and neodymium with an atomic percentage greater than or equal to 0.1% and at least one of indium, tin, palladium and gold with an atomic percentage greater than or equal to 0.1%.

[0017] Based on the above, in a reflective display panel of one embodiment of the present invention, the sputtering target used to deposit the reflective layer, in addition to silver with an atomic percentage greater than 96.5%, also includes zinc with an atomic percentage greater than or equal to 0.1% and less than or equal to 2.0% and antimony with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%. Therefore, the heat resistance of the silver alloy layer deposited using the sputtering target can be significantly improved, thereby increasing the optical stability and durability of the reflective layer. In a reflective display panel of another embodiment of the present invention, the sputtering target used to deposit the reflective layer, in addition to silver with an atomic percentage greater than 95%, also includes other elements with an atomic percentage less than or equal to 5%, and the other elements include at least one of zinc, antimony and neodymium with an atomic percentage greater than or equal to 0.1% and at least one of indium, tin, palladium and gold with an atomic percentage greater than or equal to 0.1%. Therefore, the silver alloy layer deposited using the sputtering target can not only significantly improve the heat resistance, but also effectively improve the weather resistance and resistance to halogen elements and sulfur elements of the silver alloy layer, thereby maintaining the optical properties of the silver alloy layer and improving the process yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 is a cross-sectional schematic diagram of a reflective display panel according to a first embodiment of the present invention;

[0019] Figure 2 is a schematic cross-sectional view of a pixel structure of a reflective display panel according to a first embodiment of the present invention;

[0020] Figure 3A yes Figure 2 An enlarged cross-sectional view of a reflective layer;

[0021] Figure 3B yes Figure 2 An enlarged cross-sectional view of another modified embodiment of the reflective layer;

[0022] Figure 4 is a partial flow chart of a method for manufacturing a reflective display panel according to a first embodiment of the present invention;

[0023] FIG. 5A to FIG. 5D yes Figure 4 A schematic diagram of a method for making the same;

[0024] FIG. 6A to FIG. 6D is a schematic diagram of forming a buffer material layer, a silver alloy material layer and a protective material layer in a reflective material layer in the same process equipment according to the first embodiment of the present invention;

[0025] Figure 7 is a partial flow chart of a method for manufacturing a reflective display panel according to a second embodiment of the present invention;

[0026] Figure 8 is a schematic diagram of forming a silver alloy material layer and a protective material layer in a reflective material layer in two process equipments respectively according to a second embodiment of the present invention;

[0027] Fig.9A is an enlarged cross-sectional view of a reflective layer of a reflective display panel according to a variant embodiment of the second embodiment of the present invention;

[0028] Fig. 9B is an enlarged cross-sectional view of a reflective layer of a reflective display panel according to another variant of the second embodiment of the present invention;

[0029] Fig.10 Is has Fig.9A or Fig. 9B A partial flow chart of a method for manufacturing a reflective display panel having a reflective layer;

[0030] FIG. 11A to FIG. 11C yes Fig.10 A schematic diagram of a method for making the same;

[0031] Fig.12 is a cross-sectional schematic diagram of a reflective display panel according to a third embodiment of the present invention;

[0032] Fig.13 is a schematic cross-sectional view of a pixel structure of a reflective display panel according to a third embodiment of the present invention;

[0033] Fig.14 is a schematic cross-sectional view of a pixel structure of a reflective display panel according to a fourth embodiment of the present invention;

[0034] Fig.15 yes Fig.14 An enlarged cross-sectional view of the reflective layer.

[0035] Description of Reference Numerals

[0036] 10, 20, 30: reflective display panel;

[0037] 100, 100A, 100B: pixel array substrate;

[0038] 100H1, 100H2: partial structure of pixel array substrate;

[0039] 101, 200: substrate;

[0040] 110: gate insulating layer;

[0041] 120: passivation layer;

[0042] 130: flat layer;

[0043] 130s: surface;

[0044] 131: insulation layer;

[0045] 151, 151A: silver alloy layer;

[0046] 151M: silver alloy material layer;

[0047] 153, 153a, 153b: buffer layer;

[0048] 153M: Buffer material layer;

[0049] 155: protective layer;

[0050] 155M: protective material layer;

[0051] 300: display medium layer;

[0052] ABL: incident light;

[0053] ARL: pixel array layer;

[0054] CA: carrier;

[0055] CH1, CH2, CH3: chamber;

[0056] D1, D2, D3: direction;

[0057] DE: drain;

[0058] GE: gate;

[0059] INL: insulation layer;

[0060] OP, OP”: opening;

[0061] PE, PE-A, PE-B: pixel electrodes;

[0062] PPR: patterned photoresist layer;

[0063] PX, PX-A, PX-B: pixel structure;

[0064] RA: reflex area;

[0065] RFL, RFL-A, RFL-B, RFL-C, RFL-D, RFL-E: reflective layer;

[0066] RFL_M: reflective material layer;

[0067] RL: reflected light;

[0068] S10, S10', S10", S20, S20', S20", S30, S30', S30": steps;

[0069] SC: semiconductor pattern;

[0070] SE: source;

[0071] SLT: Micro-slit;

[0072] SPU, SPU1, SPU2: sputtering equipment;

[0073] T: active element;

[0074] TA: translucent area;

[0075] TAR1, TAR2, TAR3: target materials;

[0076] TH: contact hole;

[0077] USR: user. DETAILED DESCRIPTION

[0078] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0079] Figure 1 is a cross-sectional schematic diagram of a reflective display panel according to a first embodiment of the present invention. Figure 2 is a schematic cross-sectional view of a pixel structure of a reflective display panel according to a first embodiment of the present invention. Figure 3A yes Figure 2 An enlarged cross-sectional view of the reflective layer. Figure 3B yes Figure 2 An enlarged cross-sectional view of another variant embodiment of the reflective layer. Figure 4 It is a partial flow chart of a method for manufacturing a reflective display panel according to the first embodiment of the present invention. FIG. 5A to FIG. 5D yes Figure 4 Schematic diagram of the production method. FIG. 6A to FIG. 6D It is a schematic diagram of forming a buffer material layer, a silver alloy material layer and a protective material layer in a reflective material layer in the same process equipment according to the first embodiment of the present invention.

[0080] Please refer to Figure 1, the reflective display panel 10 includes a pixel array substrate 100. In this embodiment, the pixel array substrate 100 may include a substrate 101 and a plurality of pixel structures PX. These pixel structures PX are arranged in an array (not shown) on the substrate 101. Figure 1 Only a plurality of pixel structures PX arranged along the first direction D1 of the pixel array substrate 100 are shown, but it is understandable that the plurality of pixel structures PX can be arranged in an array on the substrate 101, for example: these pixel structures PX can be arranged in a plurality of rows and columns along two directions perpendicular to each other (for example, the first direction D1 and the second direction D2). The material of the substrate 101 may include glass, quartz, high molecular polymer (for example, polyimide, polycarbonate, polymethyl methacrylate, or other suitable flexible plates), or other suitable plates. Please refer to Figure 1 and Figure 2 The pixel array layer ARL is disposed on the substrate 101, and the reflective layer RFL is disposed on the pixel array layer ARL. The pixel array layer ARL includes active components and an insulating layer (eg Figure 2 The active element T and the insulating layer INL in the display device are provided, and the material of the reflective layer RFL includes a metal with high reflectivity, for example, a metal alloy including silver. The incident light ABL is reflected by the reflective layer RFL to form a reflected light RL to form a corresponding picture in the eyes of the user USR. In the present embodiment, the incident light ABL may be ambient light, light from a front light module, or a combination thereof. In the present embodiment, the pixel array substrate 100 includes a substrate 101, a pixel array layer ARL, and a plurality of reflective layers RFL. In addition, in some embodiments, the pixel array substrate 100 may further include an alignment layer (not shown), which is disposed on the pixel array layer ARL and the plurality of reflective layers RFL, and the alignment layer is used to align a plurality of liquid crystal molecules (not shown) of the liquid crystal layer (i.e., the display medium layer 300). The material of the alignment layer may include polyimide or other suitable materials.

[0081] In this embodiment, the method for forming the active device T may include the following steps: forming a gate GE, a gate insulating layer 110, a semiconductor pattern SC, a source SE and a drain DE in sequence on a substrate 101. The semiconductor pattern SC is arranged to overlap the gate GE. The source SE and the drain DE overlap the semiconductor pattern SC and are in electrical contact with two different regions of the semiconductor pattern SC. In this embodiment, the gate GE of the active device T may be optionally arranged below the semiconductor pattern SC to form a bottom-gate thin film transistor (bottom-gate TFT), but is not limited thereto. In other embodiments, the gate of the active device may also be optionally arranged above the semiconductor pattern to form a top-gate thin film transistor (top-gate TFT).

[0082] It should be noted that the gate GE, the source SE, the drain DE, the semiconductor pattern SC and the gate insulating layer 110 can be respectively realized by any gate, any source, any drain, any semiconductor pattern and any gate insulating layer for a reflective display panel known to any technician in the relevant technical field, and the gate GE, the source SE, the drain DE, the semiconductor pattern SC and the gate insulating layer 110 can respectively be formed by any method known to any technician in the relevant technical field, so they will not be elaborated here.

[0083] Further, the reflective display panel 10 further includes an insulating layer INL. In the present embodiment, the insulating layer INL includes a passivation layer 120 and a planar layer 130, but is not limited thereto. In some embodiments, the insulating layer INL may be a single-layer structure and only includes a passivation layer 120 or a planar layer 130. The passivation layer 120 covers a plurality of active devices T of a plurality of pixel structures PX. The planar layer 130 covers the passivation layer 120. In the present embodiment, the material of the planar layer 130 may be an organic material, the material of the passivation layer 120 may be an inorganic material, and the passivation layer 120 is located between the planar layer 130 and the metal layer (e.g., the source SE and the drain DE of the active device T) to prevent the planar layer 130 from peeling off from each other due to poor adhesion with the metal layer, but is not limited thereto. The pixel electrode PE of the pixel structure PX is disposed on a surface 130s of the planar layer 130 away from the substrate 101, and is electrically connected to the drain DE of the active device T via the opening OP of the planar layer 130 and the contact hole TH of the passivation layer 120.

[0084] For example, the reflective display panel 10 may further include another substrate 200 and a display medium layer 300, wherein the display medium layer 300 is disposed between the pixel array substrate 100 and the substrate 200. In this embodiment, the display medium layer 300 is, for example, a liquid crystal layer. That is, the reflective display panel 10 of this embodiment may be a reflective liquid crystal display panel, but is not limited thereto.

[0085] On the other hand, a color filter layer (not shown) and / or a common electrode layer (not shown) may be provided on the substrate 200, but the present invention is not limited thereto. In some embodiments, the common electrode layer may be provided in the pixel array substrate 100. The electric field generated between the common electrode layer and the pixel electrode PE is suitable for driving a plurality of liquid crystal molecules (not shown) of the liquid crystal layer (i.e., the display medium layer 300) to rotate and form an arrangement state corresponding to the direction and intensity of the electric field. By changing the arrangement state of these liquid crystal molecules, the polarization state of the incident light ABL and the reflected light RL passing through the liquid crystal layer is changed to form a light output brightness corresponding to the arrangement state. In addition, in some embodiments, the reflective display panel 10 may further include another alignment layer (not shown), which is provided on the surface of the substrate 200 facing the display medium layer 300, and the other alignment layer is used to align a plurality of liquid crystal molecules (not shown) of the liquid crystal layer (i.e., the display medium layer 300).

[0086] In the present embodiment, the pixel electrode PE is, for example, a reflective electrode made of a metal alloy material including silver. That is, the pixel electrode PE of the present embodiment also serves as a reflective layer RFL of the reflective display panel 10, and the reflective layer RFL includes a silver alloy layer. Therefore, in the present embodiment, the pixel structure PX includes an active element T, an insulating layer INL and a reflective layer RFL, and the reflective layer RFL is located in the reflective area RA of the pixel structure PX.

[0087] Please refer to Figure 2 and Figure 3A , the reflective layer RFL-A includes a silver alloy layer 151. In order to improve the adhesion between the silver alloy layer 151 and the insulating layer INL, the reflective layer RFL may further include a buffer layer 153 sandwiched between the flat layer 130 and the silver alloy layer 151. The buffer layer 153 is a conductive layer, and the material of the buffer layer 153 may be a light-transmitting or light-impermeable conductive material. For example, the material of the buffer layer 153 includes ITO, IZO, Mo, MoO x , MoTa, AlNd or Ti. However, the present invention is not limited thereto. In another variant embodiment, the number of buffer layers of the reflective layer RFL may also be multiple (eg Figure 3B The buffer layer 153a and the buffer layer 153b in the reflective layer RFL-B, that is, the buffer layer of the reflective layer RFL may be a stacked structure of multiple buffer layers, wherein the materials of the multiple buffer layers may be different.

[0088] On the other hand, in order to prevent the silver alloy layer 151 from being deteriorated due to long-term exposure to the air (for example, the silver alloy layer 151 is sulfided and / or oxidized) and affecting the optical properties (for example, the color of the silver alloy layer 151 changes and / or the reflectivity decreases), the reflective layer RFL may also optionally include a protective layer 155 covering the silver alloy layer 151. The material of the protective layer 155 may be a light-transmitting material, so that at least a portion of the incident light ABL can penetrate the protective layer 155 to reach the silver alloy layer 151, and the light reflected by the silver alloy layer 151 can penetrate the protective layer 155 to form at least a portion of the reflected light RL. In addition, the buffer layer 153 may be a conductive layer or a non-conductive layer. For example, the material of the protective layer 155 includes, for example, ITO, IZO, SiO2, SiN x 、SiO x N y or Al2O3.

[0089] Please refer to Figure 4 , a partial method for manufacturing the reflective display panel 10 includes steps S10 to S30. Figure 4 and Figure 5A Step S10 includes forming an active device T and an insulating layer INL on the substrate 101 to form a partial structure 100H1 of the pixel array substrate, wherein the planar layer 130 has an opening OP, and the passivation layer 120 has a contact hole TH. Figure 4 and Figure 5B , then step S20 is performed, step S20 includes forming a reflective material layer RFL_M on the insulating layer INL to form a partial structure 100H2 of the pixel array substrate, and the reflective material layer RFL_M includes a buffer material layer 153M, a silver alloy material layer 151M and a protective material layer 155M, wherein the silver alloy material layer 151M and the protective material layer 155M in the reflective material layer RFL_M are sequentially formed in the same process equipment. In the present embodiment, the silver alloy material layer 151M and the protective material layer 155M in the reflective material layer RFL_M are formed by continuous coating in the same process equipment (e.g., sputtering equipment), that is, after the silver alloy material layer 151M is formed, the protective material layer 155M for protecting the silver alloy material layer 151M can be formed on the silver alloy material layer 151M without moving the substrate with the silver alloy material layer 151M out of the process equipment, thereby preventing the silver alloy material layer 151M from being exposed to the air and being sulfided and / or oxidized. In the present embodiment, the buffer material layer 153M and the silver alloy material layer 151M in the reflective material layer RFL_M may be formed sequentially in the same process equipment, or may be formed separately in two process equipments.

[0090] For example, if FIG. 6A to FIG. 6D As shown, Figure 5AThe partial structure 100H1 of the pixel array substrate is transferred to the sputtering device SPU to form a reflective material layer RFL_M. The reflective material layer RFL_M includes a buffer material layer 153M, a silver alloy material layer 151M and a protective material layer 155M. The materials of the buffer material layer 153M, the silver alloy material layer 151M and the protective material layer 155M can be, for example, ITO, silver alloy and ITO respectively. The sputtering device SPU includes three sputtering chambers CH1, CH2, and CH3, and the sputtering chambers CH1, CH2, and CH3 are used for sputtering to form the buffer material layer 153M, the silver alloy material layer 151M and the protective material layer 155M respectively. Figure 5A The partial structure 100H1 of the pixel array substrate is transferred to the chamber CH1 (eg, Fig. 6A As shown), a partial structure 100H1 of the pixel array substrate is located on the carrier CA, an ITO target material TAR1 is set in the chamber CH1, and a buffer material layer 153M (as shown) is formed on the insulating layer INL by a sputtering process. Figure 6B Next, Figure 6B The partial structure of the pixel array substrate in the embodiment is transferred to the chamber CH2 in the sputtering equipment SPU, the silver alloy target TAR2 is arranged in the chamber CH2, and the silver alloy material layer 151M (such as Figure 6C Next, Figure 6C The partial structure of the pixel array substrate in the embodiment is transferred to the chamber CH3 in the sputtering equipment SPU, an ITO target material TAR3 is arranged in the chamber CH3, and a protective material layer 155M (such as Fig.6D as shown) to form Figure 5B Next, the pixel array substrate partial structure 100H2 is removed from the sputtering apparatus SPU (not shown). FIG. 6A to FIG. 6D The sputtering equipment SPU shown is only an example, and the present embodiment does not limit the state of the process equipment used for continuous coating. For example, the sputtering equipment may have a chamber, Figure 5A The partial structure 100H1 of the pixel array substrate is transferred to the chamber of the sputtering equipment, and the ITO target material TAR1, the silver alloy target material TAR2 and the ITO target material TAR3 can be transferred to the chamber in sequence to form a buffer material layer 153M, a silver alloy material layer 151M and a protective material layer 155M in sequence on the insulating layer INL, which can also prevent the silver alloy material layer 151M from being exposed to the air and being sulfurized and / or oxidized.

[0091] Please refer to Figure 4 , Figure 5C and Figure 5D Next, step S30 is performed, which includes Figure 5BThe reflective material layer RFL_M in the structure is patterned to form the reflective layer RFL. For example, a patterned photoresist layer PPR (such as Figure 5C As shown), and the reflective material layer RFL_M is patterned through an etching process to form a reflective layer RFL (as shown Figure 5D As shown), the buffer material layer 153M, the silver alloy material layer 151M and the protective material layer 155M in the reflective material layer RFL_M are respectively patterned to form the buffer layer 153, the silver alloy layer 151 and the protective layer 155 in the reflective layer RFL, so that the materials of the buffer material layer 153M, the silver alloy material layer 151M and the protective material layer 155M are respectively the same as the materials of the buffer layer 153, the silver alloy layer 151 and the protective layer 155.

[0092] It is particularly noted that, although the protective material layer 155M and the silver alloy material layer 151M are both produced in the same process equipment, in order to prevent the silver element in the first formed silver alloy material layer 151M from agglomerating due to thermal diffusion during the film formation process of the protective material layer 155M, which leads to a decrease in reflectivity, the sputtering target material used to deposit the silver alloy layer 151 (i.e., the sputtering target material used to deposit the silver alloy material layer 151M, such as Figure 6C The material of the silver alloy target TAR2) in the embodiment may include silver with an atomic percentage greater than 96.5%, zinc with an atomic percentage greater than or equal to 0.1% and less than or equal to 2.0%, and antimony with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%. That is to say, the material composition of the silver alloy material layer 151M and the silver alloy layer 151 of the present embodiment includes, in addition to silver with an atomic percentage greater than 96.5%, zinc with an atomic percentage greater than or equal to 0.1% and less than or equal to 2.0%, and antimony with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%. In summary, the sputtering target, silver alloy material layer 151M and the material of the silver alloy layer 151 used to deposit the silver alloy layer 151 of the present embodiment may include silver with an atomic percentage greater than 96.5% and other elements with an atomic percentage less than or equal to 3.5%, wherein the other elements include zinc with an atomic percentage greater than or equal to 0.1% and less than or equal to 2.0% and antimony with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%.

[0093] In the present embodiment, since the addition of zinc and antimony can improve the heat resistance of the silver alloy layer 151, and the addition of zinc can also improve the reflectivity of the silver alloy layer 151 to short-wavelength light, the addition of zinc with an atomic percentage greater than or equal to 0.1% and antimony with an atomic percentage greater than or equal to 0.1% can effectively improve the heat resistance and reflectivity of the silver alloy layer 151 to short-wavelength light, thereby ensuring that the reflective surface of the silver alloy material layer 151M can still maintain a small surface roughness and a better reflectivity after the film forming process of the protective material layer 155M. On the other hand, in the sputtering target material, silver alloy material layer 151M and silver alloy layer 151 used for depositing the silver alloy layer 151 in the present embodiment, the total atomic percentage of other elements other than silver cannot exceed 3.5% (i.e., the total atomic percentage of other elements other than silver is less than or equal to 3.5%), so as to prevent the silver alloy layer 151 from having a decrease in overall reflectivity due to the addition of excessive other elements.

[0094] In addition, although the zinc and antimony elements significantly improve the heat resistance of the silver alloy material layer 151M, it still has a certain tolerance to the subsequent processes containing halogen elements and sulfur elements. In other words, even when the silver alloy material layer 151M is patterned and the edge portion exposed after patterning still has the ability to resist the subsequent processes and environmental pollution containing halogen elements and sulfur elements, thereby increasing the optical stability and durability of the reflective layer RFL.

[0095] Other embodiments will be listed below to illustrate the present disclosure in detail, wherein the same components will be marked with the same symbols, and the description of the same technical content will be omitted. For the omitted parts, please refer to the aforementioned embodiments, which will not be repeated below.

[0096] Figure 7 It is a partial flow chart of a method for manufacturing a reflective display panel according to the second embodiment of the present invention. Figure 8 It is a schematic diagram of forming a silver alloy material layer and a protective material layer in a reflective material layer in two process equipments respectively according to the second embodiment of the present invention.

[0097] The structures of the reflective display panels in the second embodiment and the first embodiment are the same (for example, both are Figure 2 ), but the methods of forming the silver alloy material layer 151M and the protective material layer 155M of the reflective material layer RFL_M in the second embodiment are different from those in the first embodiment, and the elemental composition and range of the silver alloy layer 151 of the reflective layer RFL in the second embodiment and the first embodiment (i.e., the elemental composition and range of the silver alloy material layer 151M and the elemental composition and range of the sputtering target material used to deposit the silver alloy layer 151) are different from each other.

[0098] Please refer to Figure 2 and Figure 7 , a partial method of manufacturing the reflective display panel 10 includes steps S10' to S30'. Figure 7 and Figure 5A Step S10' includes forming an active device T and an insulating layer INL on the substrate 101 to form a partial structure 100H1 of the pixel array substrate. Figure 7 and Figure 5B , then step S20' is performed, step S20' includes forming a reflective material layer RFL_M on the insulating layer INL to form a partial structure 100H2 of the pixel array substrate, and the reflective material layer RFL_M includes a buffer material layer 153M, a silver alloy material layer 151M and a protective material layer 155M, wherein the silver alloy material layer 151M and the protective material layer 155M in the reflective material layer RFL_M are formed separately in two process equipments, so after the silver alloy material layer 151M is formed in one process equipment and before being subsequently transferred to another process equipment to form the protective material layer 155M, the silver alloy material layer 151M will be exposed to the air.

[0099] For example, if Figure 8 As shown, after the silver alloy material layer 151M is formed on the buffer material layer 153M using the silver alloy target material TAR2 in the sputtering device SPU1, the partial structure of the pixel array substrate having the buffer material layer 153M and the silver alloy material layer 151M is moved out of the sputtering device SPU1, so that the silver alloy material layer 151M is exposed to the air. Next, the partial structure of the pixel array substrate having the buffer material layer 153M and the silver alloy material layer 151M is transferred to the sputtering device SPU2 using the ITO target material TAR3 to form a protective material layer 155M covering the silver alloy material layer 151M.

[0100] Please refer to Figure 7 , Figure 5C and Figure 5D Next, step S30' is performed. Step S30' includes Figure 5B The reflective material layer RFL_M in the structure is patterned to form the reflective layer RFL. Step S30' is similar to step S30 in the first embodiment. For related descriptions, please refer to the first embodiment and will not be repeated here.

[0101] Fig.9A It is an enlarged cross-sectional view of a reflective layer of a reflective display panel according to a variation of the second embodiment of the present invention. Fig. 9B is an enlarged cross-sectional view of a reflective layer of a reflective display panel according to another variant embodiment of the second embodiment of the present invention. Fig.10 Is has Fig.9A or Fig. 9B A partial flow chart of a method for manufacturing a reflective display panel having a reflective layer. FIG. 11A to FIG. 11C yes Fig.10 Schematic diagram of the production method.

[0102] Please refer to Fig.9A , Fig. 9B The reflective display panel (eg Figure 2 The reflective layer RFL of the reflective display panel 10) may be Fig.9A The reflective layer RFL-C or Fig. 9B The reflective layer RFL-D in the. Fig.9A The reflective layer RFL-C includes a buffer layer 153 and a silver alloy layer 151. Fig. 9B The reflective layer RFL-D in the embodiment includes only the silver alloy layer 151, and Fig.9A and Fig. 9B The reflective layers RFL-C and RFL-D in the embodiment do not include a protective layer disposed on the silver alloy layer 151 (for example, they do not include Figure 3A , Figure 3B The protective layer 155 in the embodiment of the present invention.

[0103] Please refer to Fig.10 The partial manufacturing method of the reflective display panel in the present variant embodiment includes steps S10″ to S30. Step S10″ includes forming an active element T and an insulating layer INL on the substrate 101 to form a Figure 5A The partial structure 100H1 of the pixel array substrate is shown. Next, the reflective layer of the reflective display panel is Fig.9A The reflective layer RFL-C in the embodiment of step S20" and S30". Please refer to Fig.10 and Fig.11A Next, step S20' is performed. Step S20' includes forming a reflective material layer RFL_M on the insulating layer INL to form a partial structure 100H2' of the pixel array substrate, and the reflective material layer RFL_M includes a buffer material layer 153M and a silver alloy material layer 151M. Please refer to Fig.10 , Fig. 11B and Fig. 11C Next, step S30 is performed. Step S30 includes: Fig.11A The reflective material layer RFL_M in the structure is patterned to form the reflective layer RFL. After performing step S20" to form the reflective material layer RFL_M on the insulating layer INL, the partial structure 100H2' of the pixel array substrate having the reflective material layer RFL_M is removed from the sputtering equipment to perform the next step S30". Because the reflective material layer RFL_M does not have a protective material layer disposed on the silver alloy material layer 151M, the silver alloy material layer 151M will be exposed to the air before performing step S30".

[0104] In the second embodiment, the silver alloy material layer 151M and the protective material layer 155M of the reflective material layer RFL_M are not made in the same process equipment. For example, after the silver alloy material layer 151M is deposited, it will be transferred to another process equipment for the deposition of the protective material layer 155M. Therefore, when transferred between process equipments, the silver alloy material layer 151M will be exposed to the air. In a variant embodiment of the second embodiment, the reflective material layer RFL_M does not have a protective material layer disposed on the silver alloy material layer 151M. For example, after the deposition of the silver alloy material layer 151M is performed in a process equipment, the partial structure 100H2' of the pixel array substrate having the silver alloy material layer 151M is moved out of the process equipment to perform a patterning process of the reflective material layer RFL_M. Therefore, after the partial structure 100H2' of the pixel array substrate is moved out of the process equipment and before the patterning process of the reflective material layer RFL_M is performed, the silver alloy material layer 151M will be exposed to the air, and when performing subsequent processes, the silver alloy material layer 151M not covered by the protective material layer and the silver alloy layer 151 not covered by the protective layer are easily contaminated by the subsequent processes. Therefore, in the second embodiment and its variant embodiments, the silver alloy material layer 151M and the silver alloy layer 151 need to have not only heat resistance, but also weather resistance and tolerance in processes containing halogen elements and sulfur elements, so as to withstand pollution from the environment when transferred between process equipment and pollution generated by other processes.

[0105] In order to meet these characteristic requirements, in the second embodiment and its variant embodiments, the material of the sputtering target used to deposit the silver alloy layer 151 may include silver with an atomic percentage greater than 95% and other elements with an atomic percentage less than or equal to 5%, wherein the other elements include at least one of zinc, antimony and neodymium with an atomic percentage greater than or equal to 0.1% and at least one of indium, tin, palladium and gold with an atomic percentage greater than or equal to 0.1%. That is to say, the material composition of the silver alloy material layer 151M and the silver alloy layer 151 of this embodiment and its variant embodiments includes, in addition to silver with an atomic percentage greater than 95%, other elements with an atomic percentage less than or equal to 5%, and the other elements include at least one of zinc, antimony and neodymium with an atomic percentage greater than or equal to 0.1% and at least one of indium, tin, palladium and gold with an atomic percentage greater than or equal to 0.1%.

[0106] Since the lower limit of the atomic percentage of silver in the silver alloy material layer 151M and the silver alloy layer 151 of the present embodiment and its variant embodiments (e.g., 95%) is lower than the lower limit of the atomic percentage of silver in the silver alloy material layer 151M and the silver alloy layer 151 of the first embodiment (e.g., 96.5%), the reflectivity of the silver alloy layer 151 of the present embodiment and its variant embodiments may be slightly lower than the reflectivity of the silver alloy layer 151 of the first embodiment. Nevertheless, the present embodiment and its variant embodiments can effectively improve the weather resistance and resistance to halogen elements and sulfur elements of the silver alloy material layer 151M and the silver alloy layer 151 by adding non-silver elements (e.g., at least one of zinc, antimony and neodymium and at least one of indium, tin, palladium and gold) with a total atomic percentage of no more than 5.0% in the silver alloy material layer 151M and the silver alloy layer 151, thereby maintaining the optical properties of the silver alloy layer 151 and improving the process yield.

[0107] For example, in one embodiment, the sputtering target used to deposit the silver alloy layer 151, the silver alloy material layer 151M, and the non-silver element composition in the silver alloy layer 151 include zinc with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%, tin with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, at least one of antimony, neodymium and indium with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, and palladium or gold with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%.

[0108] In another embodiment, the sputtering target used to deposit the silver alloy layer 151, the silver alloy material layer 151M, and the non-silver element composition in the silver alloy layer 151 include zinc with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%, tin with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, at least one of antimony and neodymium with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, and palladium or gold with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%.

[0109] In another embodiment, the sputtering target used to deposit the silver alloy layer 151, the silver alloy material layer 151M, and the non-silver element composition in the silver alloy layer 151 include zinc with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%, tin with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, antimony with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, and palladium or gold with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%.

[0110] Fig.12 is a schematic cross-sectional view of a reflective display panel according to a third embodiment of the present invention. Fig.13FIG. 2 is a cross-sectional schematic diagram of a pixel structure of a reflective display panel according to a third embodiment of the present invention. Fig.12 and Fig.13 The main difference between the reflective display panel 20 of the present embodiment and the reflective display panel 10 of the first and second embodiments is that the pixel electrode PE and the reflective layer RFL of the pixel structure PX-A in the present embodiment are different film layers, and the pixel electrode PE and the reflective layer RFL are electrically insulated from each other (i.e., not electrically connected to each other).

[0111] Please refer to Fig.12 , the reflective display panel 20 includes a pixel array substrate 100A. In the present embodiment, the pixel array substrate 100A may include a substrate 101 and a plurality of pixel structures PX-A. These pixel structures PX-A are arranged in an array (not shown) on the substrate 101. In the present embodiment, the pixel electrode PE and the reflective layer RFL of the pixel structure PX-A of the pixel array substrate 100A are different film layers. More specifically, the reflective display panel 30 also includes an insulating layer 131, which covers the reflective layer RFL disposed on the flat layer 130, and the pixel electrode PE is disposed on the insulating layer 131. That is, the pixel electrode PE is disposed on the reflective layer RFL, and the insulating layer 131 is sandwiched between the pixel electrode PE and the reflective layer RFL. In addition, in the present embodiment, the pixel electrode PE is electrically connected to the drain DE of the active element T via the opening OP" of the flat layer 130 and the insulating layer 131 and the contact hole TH of the passivation layer 120. The material of the insulating layer 131 includes, for example, SiO2, SiN x 、SiO x N y or Al2O3.

[0112] It is particularly noted that, in the present embodiment, the pixel electrode PE has a plurality of micro-slits SLT, and these micro-slits SLT overlap the reflective layer RFL, but are not limited thereto. For example, in the present embodiment, the pixel electrode PE is, for example, a light-transmitting electrode, and the material of the light-transmitting electrode includes, for example, a metal oxide, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, or other suitable oxides, or a stacked layer of at least two of the above. In the present embodiment, the reflective layer RFL can also serve as a common electrode layer of the pixel structure PX-A, and the common electrode layer can receive a common potential or be grounded, but is not limited thereto. For example, Fig.13 The reflective layer RFL in the pixel array substrate 100A can also be used as a common electrode layer of the pixel structure PX-A, and the liquid crystal layer (i.e., the display medium layer 300) is driven in a fringe field switching (FFS) mode. In some embodiments, the reflective layer RFL can be floating, and the common electrode layer (not shown) can be disposed in the pixel array substrate 100A or on the surface of the substrate 200 facing the display medium layer 300.

[0113] On the other hand, in this embodiment, the reflective layer RFL is disposed between the planar layer 130 and the insulating layer 131, and is covered by the insulating layer 131. The reflective layer RFL of this embodiment may be Figure 3A The reflective layer RFL-A, Figure 3B The reflective layer RFL-B, Fig.9A The reflective layer RFL-C or Fig. 9B . However, the present invention is not limited to this. Similar to the first and second embodiments and their variant embodiments, the method for forming the reflective layer RFL in this embodiment may be to first form a reflective material layer including a silver alloy material layer (such as the silver alloy material layer 151M in the first and second embodiments and their variant embodiments), and then pattern the reflective material layer to form the reflective layer RFL. Please refer to the relevant description of the first and second embodiments and their variant embodiments, which will not be repeated here. In addition, in some embodiments, the pixel array substrate 100A may also include an alignment layer (not shown), which is arranged on the pixel electrode PE and the insulating layer 131, and the alignment layer is used to align a plurality of liquid crystal molecules (not shown) of the liquid crystal layer (i.e., the display medium layer 300).

[0114] In the present embodiment, since a plurality of film layers, such as the insulating layer 131 and the pixel electrode PE, are provided on the reflective layer RFL, that is, after the reflective layer RFL is formed, a plurality of subsequent process steps are required to form the pixel array substrate 100A. Therefore, the silver alloy layer 151 needs to have not only heat resistance but also weather resistance and tolerance in processes containing halogen elements and sulfur elements, so as to be able to withstand the pollution from the environment while waiting for the subsequent multiple process steps and the influence of the subsequent multiple process steps.

[0115] In order to meet these characteristic requirements, the elemental composition and range of the sputtering target, the silver alloy material layer and the silver alloy layer 151 used for depositing the silver alloy layer 151 in the present embodiment may be the same as the elemental composition and range of the sputtering target, the silver alloy material layer 151M and the silver alloy layer 151 used for depositing the silver alloy layer 151 in the second embodiment and its variant embodiments. Specifically, the material of the sputtering target, the material of the silver alloy material layer and the silver alloy layer 151 used for depositing the silver alloy layer 151 in the present embodiment may include silver with an atomic percentage greater than 95% and other elements with an atomic percentage less than or equal to 5%, wherein the other elements include at least one of zinc, antimony and neodymium with an atomic percentage greater than or equal to 0.1% and at least one of indium, tin, palladium and gold with an atomic percentage greater than or equal to 0.1%. That is to say, the material composition of the silver alloy layer 151 of the present embodiment includes, in addition to silver with an atomic percentage greater than 95%, other elements with an atomic percentage less than or equal to 5%, and the other elements include at least one of zinc, antimony and neodymium with an atomic percentage greater than or equal to 0.1% and at least one of indium, tin, palladium and gold with an atomic percentage greater than or equal to 0.1%.

[0116] Since the lower limit of the atomic percentage of silver in the sputtering target, the silver alloy material layer, and the silver alloy layer 151 used for depositing the silver alloy layer 151 of the present embodiment (e.g., 95%) is lower than the lower limit of the atomic percentage of silver in the sputtering target, the silver alloy material layer 151M, and the silver alloy layer 151 of the first embodiment (e.g., 96.5%), the reflectivity of the silver alloy layer 151 of the present embodiment may be slightly lower than the reflectivity of the silver alloy layer 151 of the first embodiment. Nevertheless, the present embodiment can effectively improve the weather resistance and the ability to resist halogen elements and sulfur elements of the silver alloy material layer and the silver alloy layer 151 by adding non-silver elements (e.g., at least one of zinc, antimony, and neodymium and at least one of indium, tin, palladium, and gold) in the silver alloy material layer and the silver alloy layer 151 with a total atomic percentage of no more than 5.0%, thereby maintaining the optical properties of the silver alloy layer 151 and improving the process yield.

[0117] For example, in one embodiment, the sputtering target used to deposit the silver alloy layer, the silver alloy material layer, and the non-silver element composition in the silver alloy layer 151 include zinc with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%, tin with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, at least one of antimony, neodymium and indium with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, and palladium or gold with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%.

[0118] In another embodiment, the sputtering target used to deposit the silver alloy layer, the silver alloy material layer, and the non-silver element composition in the silver alloy layer 151 include zinc with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%, tin with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, at least one of antimony and neodymium with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, and palladium or gold with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%.

[0119] In another embodiment, the sputtering target used to deposit the silver alloy layer, the silver alloy material layer, and the non-silver element composition in the silver alloy layer 151 include zinc with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%, tin with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, antimony with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, and palladium or gold with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%.

[0120] Fig.14 is a schematic cross-sectional view of a pixel structure of a reflective display panel according to a fourth embodiment of the present invention. Fig.15 yes Fig.14 Please refer to the enlarged cross-sectional view of the reflective layer. Fig.14 The reflective display panel 30 of this embodiment is Figure 1 The difference between the reflective display panel 10 and the reflective display panel 10 is that the configuration of the pixel electrode and the reflective layer is different. For example, in the pixel array substrate 100B of the present embodiment, the pixel electrode PE of the pixel structure is, for example, a light-transmitting electrode, and the material of the light-transmitting electrode includes, for example, a metal oxide, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, or other suitable oxides, or a stacked layer of at least two of the above.

[0121] That is to say, in this embodiment, the pixel electrode PE does not also serve as the reflective layer of the reflective display panel 30, and the reflective display panel 30 needs to be provided with an additional reflective layer RFL. For example, the reflective layer RFL can be provided on the pixel electrode PE and electrically connected to the pixel electrode PE, but is not limited thereto. In other embodiments, the reflective layer RFL can also be provided between the pixel electrode PE and the insulating layer INL.

[0122] It is particularly noted that, in the present embodiment, the reflective layer RFL is located in the reflective area RA of the pixel structure of the reflective display panel 30, and the portion of the pixel electrode PE not covered by the reflective layer RFL is located in the light-transmitting area TA of the pixel structure of the reflective display panel 30. In other words, the reflective display panel 30 of the present embodiment is actually a transflective display panel.

[0123] In this embodiment, the reflective layer RFL of the reflective display panel 30 may be Fig. 9B The reflective layer RFL-D in the Fig.15 The reflective layer RFL-E shown in the figure, wherein the reflective layer RFL-E only includes the silver alloy layer 151 and the protective layer 155. On the other hand, in the present embodiment, a pixel electrode PE is provided between the reflective layer RFL and the insulating layer INL, and the material of the pixel electrode PE is, for example, ITO or IZO. Therefore, the pixel electrode PE can also be used to improve the adhesion between the silver alloy layer 151 and the flat layer 130. In addition, in some embodiments, the pixel array substrate 100B may further include an alignment layer (not shown), which is disposed on the reflective layer RFL, the pixel electrode PE and the insulating layer INL, and the alignment layer is used to align a plurality of liquid crystal molecules (not shown) of the liquid crystal layer (i.e., the display medium layer 300).

[0124] The reflective layer RFL of the reflective display panel 30 is Fig.15 In the embodiment in which the silver alloy layer 151 and the protective layer 155 in the reflective layer RFL-E are formed by continuous coating in the same process equipment (such as sputtering equipment), the elemental composition and range of the sputtering target material, the silver alloy material layer and the silver alloy layer 151 used to deposit the silver alloy layer may be the same as the elemental composition and range of the sputtering target material, the silver alloy material layer 151M and the silver alloy layer 151 used to deposit the silver alloy layer 151 in the first embodiment.

[0125] The reflective layer RFL of the reflective display panel 30 is Fig. 9B In the embodiment of the reflective layer RFL-D in the embodiment (that is, the reflective layer RFL-D does not include a protective layer covering the silver alloy layer 151), or the reflective layer RFL of the reflective display panel 30 is Fig.15 In the embodiment in which the silver alloy layer 151 and the protective layer 155 in the reflective layer RFL-E are formed respectively in two process equipments, the elemental composition and range of the sputtering target material, the silver alloy material layer and the silver alloy layer 151 used to deposit the silver alloy layer 151 may be the same as the elemental composition and range of the sputtering target material, the silver alloy material layer 151M and the silver alloy layer 151 used to deposit the silver alloy layer 151 in the second embodiment and its variant embodiments.

[0126] In summary, in a reflective display panel of one embodiment of the present invention, the sputtering target used to deposit the reflective layer, in addition to silver with an atomic percentage greater than 96.5%, also includes zinc with an atomic percentage greater than or equal to 0.1% and less than or equal to 2.0% and antimony with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%. Therefore, the heat resistance of the silver alloy layer deposited using the sputtering target can be significantly improved, thereby increasing the optical stability and durability of the reflective layer. In a reflective display panel of another embodiment of the present invention, the sputtering target used to deposit the reflective layer, in addition to silver with an atomic percentage greater than 95%, also includes other elements with an atomic percentage less than or equal to 5%, and the other elements include at least one of zinc, antimony and neodymium with an atomic percentage greater than or equal to 0.1% and at least one of indium, tin, palladium and gold with an atomic percentage greater than or equal to 0.1%. Therefore, the silver alloy layer deposited using the sputtering target can not only significantly improve the heat resistance, but also effectively improve the weather resistance and resistance to halogen elements and sulfur elements of the silver alloy layer, thereby maintaining the optical properties of the silver alloy layer and improving the process yield.

[0127] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A reflective display panel, comprising a pixel structure, wherein the pixel structure has a reflective area, characterized in that: The pixel structure comprises: an active component and an insulating layer, wherein the insulating layer is located above the active component; and A reflective layer is arranged on the insulating layer and located in the reflective area, the reflective layer includes a silver alloy layer, the material of the silver alloy layer includes silver with an atomic percentage greater than 96.5%, zinc with an atomic percentage greater than or equal to 0.1% and less than or equal to 2.0%, and antimony with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%.

2. The reflective display panel according to claim 1, characterized in that: The reflective layer further comprises: A protective layer covers the silver alloy layer, and the material of the protective layer includes a light-transmitting conductive material or a light-transmitting insulating material.

3. The reflective display panel according to claim 1, characterized in that: The reflective layer further includes a buffer layer sandwiched between the insulating layer and the silver alloy layer, and the material of the buffer layer includes a conductive material.

4. A sputtering target suitable for depositing the silver alloy layer as claimed in claim 1, characterized in that: The material of the sputtering target includes silver with an atomic percentage greater than 96.5%, zinc with an atomic percentage greater than or equal to 0.1% and less than or equal to 2.0%, and antimony with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%.

5. A reflective display panel, comprising a pixel structure, wherein the pixel structure has a reflective area, characterized in that: The pixel structure comprises: an active component and an insulating layer, wherein the insulating layer is located above the active component; and A reflective layer is arranged on the insulating layer and located in the reflective area, the reflective layer includes a silver alloy layer, the material of the silver alloy layer includes silver with an atomic percentage greater than 95% and other elements with an atomic percentage less than or equal to 5%, and the other elements include at least one of zinc, antimony and neodymium with an atomic percentage greater than or equal to 0.1% and at least one of indium, tin, palladium and gold with an atomic percentage greater than or equal to 0.1%.

6. The reflective display panel according to claim 5, characterized in that: The other elements include zinc with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%, tin with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, antimony with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, at least one of neodymium and indium, and palladium or gold with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%.

7. The reflective display panel according to claim 6, characterized in that: The other elements include zinc with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%, tin with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, at least one of antimony and neodymium with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, and palladium or gold with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%.

8. The reflective display panel according to claim 7, characterized in that: The other elements include zinc with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%, tin with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, antimony with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.5%, and palladium or gold with an atomic percentage greater than or equal to 0.1% and less than or equal to 1.0%.

9. The reflective display panel according to claim 5, characterized in that: The pixel structure further includes: a pixel electrode, disposed above the reflective layer, and the pixel electrode overlaps the reflective layer; and Another insulating layer is sandwiched between the pixel electrode and the reflective layer.

10. The reflective display panel according to claim 5, characterized in that: The reflective layer further comprises: A protective layer covers the silver alloy layer, and the material of the protective layer includes a light-transmitting conductive material or a light-transmitting insulating material.

11. The reflective display panel according to claim 5, characterized in that: The reflective layer further includes a buffer layer sandwiched between the insulating layer and the silver alloy layer, and the material of the buffer layer includes a conductive material.

12. A sputtering target suitable for depositing the silver alloy layer as claimed in claim 5, characterized in that: The material of the sputtering target includes silver with an atomic percentage greater than 95% and other elements with an atomic percentage less than or equal to 5%, and the other elements include at least one of zinc, antimony and neodymium with an atomic percentage greater than or equal to 0.1% and at least one of indium, tin, palladium and gold with an atomic percentage greater than or equal to 0.1%.

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