Method for selective silicon germanium epitaxy at low temperature

Abstract

In one embodiment, a method of selectively depositing a silicon germanium material on a substrate is provided. The method includes positioning the substrate within a substrate processing chamber, the substrate having a dielectric material and a silicon-containing single crystal thereon; maintaining the substrate at a temperature of about 450 DEG C or less; exposing the substrate to process gases including: a silicon source gas, a germanium source gas, an etchant gas, a carrier gas, and at least one dopant source gas; and epitaxially and selectively depositing a first silicon germanium material on the substrate.

Description

[0001] This application is a divisional application of an invention patent application with an application date of July 30, 2019, application number 201910694021.0, and invention name “Method for selective silicon germanium epitaxy at low temperature”. Technical Field

[0002] Embodiments of the present disclosure relate generally to a semiconductor manufacturing process and a semiconductor device, and more particularly, to a method of depositing a silicon-germanium-containing film for forming a semiconductor device or depositing a silicon-germanium-containing film to form a semiconductor device. Background Art

[0003] Selective SiGe epitaxial deposition allows epitaxial layers to be deposited on exposed silicon (Si) or other semiconductor regions of a substrate, also referred to as layer growth, with no net SiGe growth on exposed dielectric regions of the substrate. Selective epitaxy can be used to manufacture semiconductor device structures, such as for forming desired layers in elevated source / drain, source / drain extensions, contact plugs, and base layers of bipolar devices. Generally, the selective epitaxial process involves two operations: a deposition operation and an etching operation. The deposition operation and the etching operation occur simultaneously on the semiconductor and on the dielectric surface, with relatively different reaction rates and therefore relatively different deposition rates. The selective process window of the deposition-etching scheme for selective SiGe growth results in cumulative deposition only on the semiconductor surface, which can be tuned by changing the concentration of the etchant gas used to remove the deposited material from the exposed surface of the substrate.

[0004] Selective silicon germanium epitaxy by chemical vapor deposition typically employs precursors containing one Si or Ge atom, such as silane, dichlorosilane, or germane. Accumulation or net deposition of SiGe on Si or other semiconductor regions above the dielectric is achieved by co-flowing an etchant such as hydrogen chloride with a deposition precursor for depositing or growing SiGe on exposed semiconductors on the substrate, which is referred to as selectivity to Si. In such processes, the temperature of the substrate is increased to and / or maintained at a temperature above 500°C. However, at substrate temperatures below 500°C, epitaxial growth of silicon germanium is reduced, and the deposition or growth selectivity of Si over dielectric materials is dramatically reduced.

[0005] Therefore, there is a need for a silicon germanium epitaxial process that is selective to Si while maintaining both good selectivity to Si and growth or deposition rate at low temperatures (< about 500° C.). Summary of the invention

[0006] In one embodiment, a method for depositing a silicon germanium material on a substrate is provided, the method comprising: positioning a substrate in a substrate processing chamber, the substrate having a dielectric material and a silicon-containing single crystal thereon; maintaining the substrate at a temperature of about 450° C. or less; exposing the substrate to a process gas, the process gas comprising: a silicon source gas; a germanium source gas; an etchant gas; a carrier gas; and at least one dopant source gas; and epitaxially and selectively depositing a first silicon germanium material on the substrate.

[0007] In another embodiment, a method for depositing silicon germanium material on a substrate is provided, the method comprising: positioning a substrate in a substrate processing chamber, the substrate having a dielectric material and a silicon germanium single crystal thereon; maintaining the substrate at a temperature of about 450° C. or less; exposing the substrate to a process gas, the process gas comprising: a silicon source gas; a germanium source gas; an etchant gas; a carrier gas; and at least one dopant source gas, the at least one dopant source gas comprising a boron-containing dopant source gas or a phosphorus-containing dopant source gas; and epitaxially and selectively depositing silicon germanium material on the substrate, the silicon germanium material having a resistivity of 0.3 mΩ·cm.

[0008] In another embodiment, a method for depositing a silicon germanium material on a substrate is provided, the method comprising: positioning a substrate in a substrate processing chamber, the substrate having a dielectric material and a silicon-containing single crystal thereon; maintaining the substrate at a temperature of 400° C. or lower; exposing the substrate to a process gas, the process gas comprising: a silicon source gas; a germanium source gas, the germanium source gas comprising germane or digermane; an etchant gas, the etchant gas comprising one or more of HCl, HF, Cl2, HBr, Br2, SiCl4, SiHCl3, SiH2Cl2, GeCl4 and GeHCl3; a carrier gas; and a dopant source gas, the dopant source gas comprising diborane; and epitaxially and selectively depositing a first silicon germanium material on the substrate.

[0009] In another embodiment, a non-transitory computer-readable medium is provided, the non-transitory computer-readable medium comprising instructions for causing a computer system to control a substrate processing device to perform a process, the process comprising: positioning a substrate in a substrate processing chamber, the substrate having a dielectric material and a silicon-containing single crystal thereon; maintaining the substrate at a temperature of approximately 450°C or less; exposing the substrate to a process gas, the process gas comprising: a silicon source gas; a germanium source gas; an etchant gas; a carrier gas; and at least one dopant source gas; and epitaxially and selectively depositing a first silicon germanium material on the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] The above briefly summarizes the manner in which the detailed features of the present disclosure can be understood in detail, as well as the more specific description of the present disclosure, which can be understood by referring to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings only illustrate exemplary embodiments and therefore should not be considered to be limited in scope, and other equally effective embodiments may be allowed.

[0011] Figure 1A is a flow chart illustrating a method of forming an epitaxial layer according to some embodiments.

[0012] Figure 1B is a flow chart illustrating a method of forming an epitaxial layer according to some embodiments.

[0013] Figure 2 A fin field effect transistor (FinFET) device having an epitaxially deposited silicon-containing layer is shown in accordance with some embodiments.

[0014] Figure 3A A diagram showing a source / drain extension device within a conventional metal oxide semiconductor field effect transistor (MOSFET).

[0015] Figure 3B Diagram showing source / drain extension devices within a FinFET.

[0016] Figure 4 is a cross-sectional view of a thermal processing chamber that may be used to perform an epitaxial process.

[0017] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the various figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further description. DETAILED DESCRIPTION

[0018] Embodiments described herein illustrate processes for epitaxially depositing silicon-containing compounds during the fabrication of various device structures. The processes described herein allow for selective and epitaxial growth or deposition of silicon germanium film layers on exposed crystalline silicon-containing regions of a substrate rather than on exposed dielectric regions of the substrate at low substrate temperatures (e.g., about 450° C. or less), with nearly complete selectivity for exposed crystalline silicon over exposed dielectric regions of the substrate when performed at temperatures of about 400° C., such as about 350° C. or less. The processes herein advantageously provide approximately 1×10 15 or higher, such as about 1×10 21 or higher, such as about 5×10 21In addition, dopants such as boron advantageously allow epitaxial silicon germanium materials to be grown or deposited at low temperatures. Lower temperature processes advantageously enable the process to reduce the thermal budget, thereby reducing adverse thermal effects on the formed devices.

[0019] Embodiments of the present disclosure include methods for selectively growing or depositing films of epitaxial silicon-containing compounds. For example, the silicon-containing compound grows on exposed regions of a substrate containing crystalline silicon regions, rather than on exposed regions of dielectric material on the substrate. Selective silicon-containing film growth or deposition can be performed when the substrate surface has more than one material exposed thereon (such as exposed single crystal silicon surface regions) and has features covered with dielectric materials (such as SiO and SiN layers). An etchant (e.g., HCl) is used during deposition to achieve selective epitaxial growth or deposition on the crystalline silicon surface while retaining dielectric features or structures that are not coated by the epitaxially deposited material. During deposition, the deposited material forms a crystalline layer on the exposed single crystal silicon and a polycrystalline or amorphous layer on the exposed dielectric surface. The etchant removes amorphous or polycrystalline films grown or deposited on amorphous or polycrystalline features faster than it can remove epitaxial crystalline films grown or deposited on exposed crystalline materials of the substrate (or silicon germanium materials that have never grown on the surface of the substrate). And thus, selective epitaxial net growth or deposition of a silicon-containing compound on the exposed crystalline material of the substrate is achieved.

[0020] The processes disclosed herein can be performed on a variety of substrates having various geometries (e.g., circular, square, and rectangular) and sizes (e.g., 200 mm OD, 300 mm OD, 400 mm OD), such as on semiconductor wafers, such as on crystalline and single crystal silicon (e.g., Si <100> and Si <111> ), silicon germanium, doped or undoped silicon or germanium substrates, silicon on insulator (SOI) substrates, III-V materials, and patterned or unpatterned substrates. Surfaces and / or substrates include these materials, as well as films, layers, and materials with dielectric, conductive, and barrier properties, and include polysilicon.

[0021] As used herein, silicon compounds and silicon-containing compounds refer to materials, layers and / or films, and include Si, SiGe, doped variants thereof, and combinations thereof that are selectively and epitaxially grown in the processes described herein. Silicon compounds and silicon-containing compounds include strained layers, unstrained layers, or strained and unstrained layers within the film.

[0022] Figure 1A1 is a flow chart showing a method 100 of forming a selective epitaxial layer on a selected surface of a substrate according to one embodiment. The epitaxial layer is, for example, a silicon germanium film. The method 100 includes positioning a substrate in a substrate processing chamber at operation 105. The method 100 also includes heating the substrate to, maintaining the substrate at, or heating and maintaining the substrate at a temperature of 450° C. or less, such as 400° C. or less, such as 350° C. or less, or such as 300° C. or less at operation 110, for example, during the deposition or growth of the Si-containing compound, the substrate may be maintained at a temperature between about 250° C. and about 450° C., or such as a temperature between about 270° C. and about 450° C. The method 100 further includes exposing the heated substrate to a process gas including a silicon source gas, a germanium source gas, an etchant, a carrier gas, and at least one dopant source gas at operation 115. The method 100 further includes epitaxially and selectively growing or depositing a silicon germanium material on a crystalline silicon surface while leaving the dielectric features or structures uncoated by the silicon germanium material at the end of operation 120.

[0023] The carrier gas is used to transport the silicon source gas, the germanium source gas, the dopant source gas, and the etchant source gas in the process described herein. The carrier gas includes H2, Ar, N2, He, and combinations thereof. In some embodiments, H2 is used as the carrier gas. In other embodiments, N2 is used as the carrier gas. In some embodiments of the method, the carrier gas can be combined in various proportions.

[0024] The etchant in gaseous form is used to remove a film of Si-containing material grown on the exposed dielectric material, which may be formed in an amorphous or polycrystalline form on the exposed dielectric material of the substrate, faster than the etchant may be used to remove Si-containing material grown or deposited in a crystalline form on the exposed crystalline silicon of the substrate (e.g., on a single crystal silicon material). Etching agents used for this purpose during the processes described herein include HCl, HF, HBr, B r2 , Si2Cl6, SiCl4, SiHCl3, SiH2Cl2, CCl4, Cl2, GeCl4, GeHCl3 and combinations of the above.

[0025] Silicon source gases or precursors that can be used in the selective epitaxy process described herein include silane (SiH4), higher silanes, halogenated silanes, and organosilanes. Higher silanes include those having the empirical formula Si x H (2x + 2) Compounds such as disilane (Si2H6), trisilane (Si3H8) and tetrasilane (Si4H 10 ). Halogenated silanes include those having the empirical formula X' y Si x H (2x + 2-y)Compounds wherein X' = F, Cl, Br or I, such as dichlorosilane (SiH2Cl2), tetrachlorosilane (SiCl4) and hexachlorodisilane (Si2Cl6) and trichlorosilane (SiHCl3). Organosilanes include those having the empirical formula R y Si x H (2x + 2-y) Compounds wherein R = methyl, ethyl, propyl or butyl, such as methylsilane ((CH3)SiH3), dimethylsilane ((CH3)2SiH2), ethylsilane ((CH3CH2))SiH3), methyldisilane ((CH3)Si2H5), dimethyldisilane ((CH3)2Si2H4) and hexamethyldisilane ((CH3)6Si2).

[0026] Germanium source gases or precursors that can be used in the selective epitaxy process described herein include germanes (e.g., GeH4), higher germanes, germane halides, and organogermanes. Higher germanes include germanes having the empirical formula Ge x H (2x + 2) Compounds such as digermane (Ge2H6), trigermane (Ge3H8) and tetragermane (Ge4H 10 ). Germanium halides include GeCl4 (germanium tetrachloride) and GeHCl3 (trichlorogermane). Organic germanes include those with the empirical formula R y Ge x H (2x + 2-y) Compounds wherein R = methyl, ethyl, propyl or butyl, such as methylgermane ((CH3)GeH3), dimethylgermane ((CH3)2GeH2), ethylgermane ((CH3CH2) GeH3), methyldigermane ((CH3)Ge2H5), dimethyldigermane ((CH3)2Ge2H4) and hexamethyldigermane ((CH3)6Ge2).

[0027] The deposited film layer of the silicon-containing compound is doped with a specific dopant to achieve its desired conductive properties. In some embodiments, the silicon-containing compound is p-type doped, such as by flowing diborane into the deposition chamber in a necessary ratio with the deposition precursor gas to add a concentration of about 1×10 15 Atom / cm 3 or higher boron, such as about 1×10 19 Atom / cm 3 or more, such as about 5×10 21 Atom / cm 3 For example, the silicon-containing compound is p-doped, such as by flowing diborane during deposition of the silicon-containing compound to add a concentration in the range of about 1×10 15 Atom / cm 3 About 5×10 21Atoms / cm 3 (e.g. about 5×10 19 Atom / cm 3 About 5×10 21 Atom / cm 3 , or about 1×10 18 Atom / cm 3 About 5×10 21 Atom / cm 3 , or about 1×10 20 Atom / cm 3 About 2.5×10 21 Atom / cm 3 In another embodiment, the silicon-containing compound is n-doped as follows: a phosphorus source gas is flowed into the deposition chamber so that the phosphorus concentration in the deposited film is 1×10 15 Atom / cm 3 About 5×10 21 Atom / cm 3 (such as about 5×10 19 Atom / cm 3 About 5×10 21 Atom / cm 3 , or about 1×10 18 Atom / cm 3 About 5×10 21 Atom / cm 3 , or about 1×10 20 Atom / cm 3 About 2.5×10 21 Atom / cm 3 ).

[0028] The dopants used herein include boron-containing dopants and phosphorus-containing dopants. Boron-containing dopant source gases include borane, organic borane (e.g., alkyl borane), and boron halides. Borane includes borane (BH3), diborane (B2H6), triborane (B3H5), tetraborane (B4H 10 ), pentaborane (9) (B5H9), pentaborane (11), hexataborane (10) (B6H 10 ), hexaborane (12) (B6H 12 ) and decaborane (14)((B 10 H 14 ), while alkyl boranes include those having the empirical formula R x BH (3-x)Compounds wherein R = methyl, ethyl, propyl or butyl, and x = 0, 1, 2 or 3. Alkylboranes include trimethylborane ((CH3)3B), dimethylborane ((CH3)2BH), triethylborane ((CH3CH2)3B) and diethylborane ((CH3CH2)2BH). Boron halides include electron-deficient boron halides such as boron trifluoride (BF3), boron trichloride (BCl3) and boron tribromide (BBr3). Doping source gases also include phosphorus-containing dopants such as phosphine (PH3) and alkyl phosphines such as those having the empirical formula R x PH (3-x) wherein R = methyl, ethyl, propyl or butyl, and x = 0, 1, 2 or 3. Alkyl phosphines include trimethylphosphine ((CH3)3P), dimethylphosphine ((CH3)2PH), triethylphosphine ((CH3CH2)3P) and diethylphosphine ((CH3CH2)2PH). Other phosphorus-containing compounds that can be used as dopant source gases include phosphorus trichloride (PCl3), phosphorus tribromide (PBr3), alkyl phosphines (such as tributyl phosphate (TBP)) and silyl phosphine [(H3Si) 3-x PR x ], where x = 0, 1, 2, and R x The dopant source gas also includes arsenic-containing dopants, including arsenic halide compounds arsine (AsH3), trimethylarsine, and silylarsine [(H3Si) 3-x AaS x ], where x = 0, 1, 2, and R x It is hydrogen or deuterium.

[0029] As an example of method 100, a silicon-containing material is epitaxially and selectively grown to form a doped SiGe material on an exposed single crystal silicon surface of a substrate rather than on an exposed dielectric material of the substrate. For example, the doped SiGe material is selectively formed on an elevated source / drain, source / drain extension, contact plug, and base layer of a bipolar device comprising single crystal silicon. The single crystal surface may be, for example, a silicon-containing single crystal or a silicon germanium single crystal. A substrate (e.g., 300 mm OD) containing semiconductor features is placed in a substrate processing chamber. During processing, a silicon source gas (e.g., silane) is simultaneously flowed into the substrate processing chamber with a carrier gas (e.g., H2 and / or N2), a germanium source gas (e.g., GeH4), a dopant source gas (e.g., B2H6) and an etchant (e.g., HCl). These gases may flow into the substrate processing chamber in the same or different conduits. The gases may be mixed at the showerhead, the introduction channel of the chamber, in the chamber, or after leaving the partition showerhead. The flow rate of the silicon source gas ranges from about 5 sccm to about 500 sccm, such as about 10 sccm to about 100 sccm, such as about 20 sccm to about 50 sccm. The flow rate of the carrier gas ranges from about 1,000 sccm to about 60,000 sccm, such as about 10,000 sccm to about 20,000 sccm, such as about 12,000 sccm to about 15,000 sccm. The flow rate of the germanium source gas ranges from about 0.1 sccm to about 100 sccm, such as about 0.1 sccm to about 10 sccm or about 0.5 sccm to about 20 sccm, such as about 0.5 sccm to about 2 sccm, for example about 1 sccm. The flow rate of the dopant source gas ranges from about 0.01 sccm to about 3 sccm, such as about 0.1 sccm to about 2 sccm, for example about 0.5 sccm to about 1 sccm. The flow rate of the etchant gas ranges from about 5 sccm to about 1,000 sccm, such as about 10 sccm to about 50 sccm, for example, about 20 sccm to about 40 sccm. The pressure of the substrate processing chamber is maintained at about 0.1 Torr to about 200 Torr, such as about 5 Torr to about 20 Torr, for example, about 10 Torr to about 15 Torr. The substrate is maintained at a temperature of about 450°C or less, such as about 400°C or less, such as about 350°C or less, such as about 300°C or less. For example, the substrate can be maintained at (or heated to and maintained at) a temperature between about 250°C and about 450°C, such as between about 270°C and about 450°C. The reaction of the source gas mixture is thermally driven, and it reacts at the heated substrate surface to epitaxially deposit silicon material, i.e., silicon germanium material, on the crystalline silicon surface of the substrate and believed to be on the amorphous or polycrystalline silicon-based dielectric features of the substrate. The etchant (eg, HCl) etches away SiGe compounds that are also formed on amorphous or polycrystalline silicon-based or other dielectric features on the substrate surface, but does not significantly etch epitaxial layers formed on single crystal silicon.

[0030] Therefore, a deposition or growth process is performed to selectively form a doped SiGe material on the exposed crystalline silicon surface at a deposition rate of about 5Å / min to about 600Å / min (such as about 5Å / min to about 50Å / min, for example, about 10Å / min to about 30Å / min), and the thickness of the doped SiGe material ranges from about 20Å to 3,000Å (such as from about 50Å to about 1000Å, for example, from about 50Å to about 100Å). The germanium concentration of the deposited SiGe material ranges from about 1 atomic % material to about 100 atomic % material (such as about 10 atomic % to about 100 atomic %, such as about 10 atomic % to about 90 atomic %, such as about 40 atomic % to about 70 atomic %, for example, about 60 atomic %). The boron concentration of the deposited SiGe material ranges from about 1×10 15 Atom / cm 3 About 5×10 21 Atom / cm 3 (such as about 5×10 19 Atom / cm 3 About 5×10 21 Atom / cm 3 , or about 1×10 18 Atom / cm 3 About 5×10 21 Atom / cm 3 , or about 1×10 20 Atom / cm 3 About 2.5×10 21 Atom / cm 3 ).

[0031] The resistivity of the epitaxially grown B-doped SiGe layer is about 0.3 mΩ·cm or less (such as between about 0.2 mΩ·cm and about 0.3 mΩ·cm, for example, about 0.25 mΩ·cm or less).

[0032] Figure 1B1 is a flow chart illustrating a method 150 of selectively forming an epitaxial layer on a portion of a substrate according to one embodiment. The epitaxial layer is, for example, a silicon germanium film. The method 150 includes positioning a substrate within a substrate processing chamber at operation 155. The method 150 further includes maintaining (and / or heating) the substrate at a temperature of 450° C. or less, such as 400° C. or less, such as 350° C. or less, such as 300° C. or less, at operation 160. For example, the substrate may be maintained (or heated) at a temperature between about 250° C. and about 450° C., such as a temperature between about 270° C. and about 450° C. The method 150 further includes exposing the substrate to a first process gas at operation 165, the first process gas including: a first silicon source gas; a first germanium source gas; a first etchant gas; a first carrier gas; and at least one first dopant source gas. The method 150 further includes epitaxially and selectively depositing a first silicon germanium material on a portion of the substrate at operation 170. Operations 155, 160, 165, and 170 are the same as operations 105, 110, 115, and 120 of method 100. Method 150 further includes exposing the substrate to a second process gas at operation 175, the second process gas comprising: a second silicon source gas; a second germanium source gas; a second etchant gas; and a second carrier gas; and optionally a second dopant source gas. Method 150 further includes epitaxially and selectively depositing a second silicon germanium material on a portion of the substrate at operation 180.

[0033] As an example of method 150, in operations 175 and 180, after depositing any silicon compound as described above, a second silicon source gas (e.g., dichlorosilane, Cl2SiH2) is used to epitaxially grow the second silicon compound into a SiGe material. The first silicon germanium material is deposited or grown by, for example, the example of the above method 100. The second silicon source gas (e.g., dichlorosilane) flows into the substrate processing chamber simultaneously with the second carrier gas (e.g., H2 and / or N2), the second germanium source gas (e.g., GeH4), the second dopant source gas (e.g., B2H6) and the second etchant gas (e.g., HCl). The flow rate of dichlorosilane ranges from about 5 sccm to about 500 sccm, such as about 10 sccm to about 100 sccm, such as about 20 sccm to about 50 sccm. The flow rate of the second carrier gas is about 1,000 sccm to about 60,000 sccm, such as about 10,000 sccm to about 20,000 sccm, such as about 12,000 sccm to about 15,000 sccm. The flow rate of the second germanium source gas ranges from about 0.1 sccm to about 100 sccm, such as about 0.1 sccm to about 10 sccm or about 0.5 sccm to about 20 sccm, such as about 0.5 sccm to about 2 sccm, for example, about 1 sccm. The flow rate of the second dopant source gas ranges from about 0.01 sccm to about 3 sccm, such as about 0.1 sccm to about 2 sccm, for example, about 0.5 sccm to about 1 sccm. The flow rate of the second etchant gas ranges from about 5 sccm to about 1,000 sccm, such as about 10 sccm to about 50 sccm, for example, about 20 sccm to about 40 sccm. The pressure of the substrate processing chamber is maintained at about 0.1 Torr to about 200 Torr, such as about 5 Torr to about 20 Torr, for example, about 10 Torr to about 15 Torr. The substrate is maintained at a temperature of about 450°C or less, such as about 400°C or less, such as about 350°C or less, such as about 300°C or less. For example, the substrate can be maintained at (or heated to and maintained at) a temperature between about 250°C and about 450°C, such as between about 270°C and about 450°C. The reaction of the second source gas mixture is thermally driven, and it reacts at the heated substrate surface to epitaxially deposit a second silicon material, i.e., a second silicon germanium material, on the first SiGe material of the substrate and the dielectric features of the substrate. The second etchant etches the SiGe compound from the amorphous or polycrystalline dielectric features on the substrate surface, but does not significantly etch the epitaxial layer formed on the surface of the first SiGe material.

[0034] The process is performed to selectively form a second SiGe material on the surface of the first SiGe material at a deposition rate of about 5Å / min to about 600Å / min (such as about 5Å / min to about 50Å / min, for example, about 10Å / min to about 30Å / min), and the thickness of the second SiGe material ranges from about 20Å to 3,000Å (for example, about 50Å to about 1000Å, for example, about 50Å to about 100Å). The germanium concentration of the deposited SiGe material is in the range of about 1 atomic % to about 100 atomic % material (such as about 10 atomic % to about 100 atomic %, such as about 10 atomic % to about 90 atomic %, such as about 40 atomic % to about 70 atomic %, for example, about 60 atomic %). In another embodiment, the third silicon-containing layer is deposited using any of the processes discussed above.

[0035] In some embodiments, between processing operations, the substrate surface is exposed to environmental conditions, such as air including oxygen and / or water vapor. Environmental exposure generally occurs when the substrate is moved between multiple processing chambers during device manufacturing. A first silicon-containing layer is deposited on the substrate surface, the substrate is exposed to environmental conditions, and then a second silicon-containing layer is deposited on the substrate surface. In one aspect, a cap layer is deposited on the first silicon-containing layer before the layer is exposed to environmental conditions. The cap layer can be a semiconductor material, such as silicon. For example, a silicon-germanium layer is deposited on the substrate surface, a silicon cap layer is deposited on the silicon-germanium layer just grown or deposited, the substrate is exposed to environmental conditions, and then a second silicon-containing layer is deposited on the silicon cap layer. The Si cap layer can be placed on top of the B-doped SiGe layer to protect the B-doped SiGe layer from oxidation. If it is necessary to remove the Si cap surface before selectively forming the next epitaxial layer, it can be removed by oxidizing the Si cap surface to form silicon oxide, and then selectively etching the silicon oxide.

[0036] In some embodiments, the silicon-containing material includes a germanium concentration of about 0 atomic % to about 95 atomic %. In other embodiments, the germanium concentration is in the range of about 1 atomic % to about 30 atomic %, such as about 10 atomic % to about 25 atomic %, such as about 20 atomic %.

[0037] In some embodiments, the ratio of the silicon source gas and the germanium source gas may be varied to control the elemental concentrations of silicon, germanium, and dopants when growing the graded film.

[0038] The processes described herein are useful when depositing silicon-containing compound layers in, for example, FinFETs, conventional planar MOSFETs, and bipolar transistors.

[0039] Figure 2A perspective view of a FinFET semiconductor structure 250 is shown, which features epitaxial growth with a silicon-containing compound in accordance with one of the embodiments described herein. The semiconductor structure 250 may include a substrate 251, a plurality of fins 252 (only two fins are shown, but the structure may have more than two fins), a dielectric material 254 disposed between adjacent fins 252 on the substrate 251, and a gate electrode 260 disposed on the dielectric material 254 and over a portion of each fin 252. The substrate 251 may be a bulk silicon substrate and may be doped with p-type or n-type impurities. The plurality of fins 252 may be made of the same material as the substrate 251. The dielectric material 254 may form isolation regions, such as shallow trench isolation (STI) regions, and may be made of silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, or any other suitable dielectric material. As Figure 2 As shown, each of the plurality of fins 252 extends a distance above the upper surface of the dielectric material 254. A gate dielectric 258 is formed between the gate electrode 260 and the plurality of fins 252. The gate dielectric 258 facilitates electrical isolation between the gate electrode 260 and the plurality of fins 252. The gate dielectric 258 may be made of silicon nitride, silicon oxide, hafnium oxide, hafnium silicon oxynitride, hafnium silicate, hafnium silicon oxide, or any other suitable gate dielectric material. The gate electrode 260 may be made of polysilicon, amorphous silicon, germanium, silicon germanium, a metal, or a metal alloy.

[0040] Figure 3A A cross section of a conventional planar MOSFET according to some embodiments is depicted. After forming spacers 334 on both sides of the dummy gate 336, a portion of the substrate or fin is etched away, and then the substrate is wet cleaned to produce a recess 332, within which a silicon-containing compound is epitaxially deposited according to the process described herein and serves as a source / drain. The silicon-containing compound is epitaxially grown to mimic the lattice of the exposed substrate or fin surface, and this arrangement is maintained as the silicon-containing compound grows with thickness. After this source and drain formation, and after several intermediate steps, the dummy gate 336 is ultimately replaced by an actual metal gate electrode.

[0041] According to embodiments described herein, epitaxial silicon compound layer 332 is selectively deposited in the source / drain regions. Selective silicon-containing film growth may be performed when substrate surface 330 has more than one material exposed thereon (such as exposed single crystal silicon surface regions) and has features covered with dielectric materials (such as SiO and SiN layers). Silicon compound layer 332 is composed of, for example, doped SiGe layers located on either side of the gate in the device shown in FIG. 3 and having, for example, a germanium concentration of about 1 atomic % to about 30 atomic %, such as about 20 atomic %, and, for example, 1×10 15 Atom / cm 3 About 5×1021 Atom / cm 3 (such as about 5×10 19 Atom / cm 3 About 5×10 21 Atom / cm 3 , or about 1×10 18 Atom / cm 3 About 5×10 21 Atom / cm 3 , or about 1×10 20 Atom / cm 3 About 2.5×10 21 Atom / cm 3 )'s dopant (e.g., B or P) concentration.

[0042] In some embodiments, using the processes described herein, a B-doped SiGe layer 340 can be formed on top of the existing B-doped SiGe source / drain 332 at a low temperature of less than about 450° C. to form a contact layer. The contact layer reduces the Schottky barrier between the B-doped SiGe source / drain and the metal electrode and provides a lower contact resistivity. In this embodiment, the existing B-doped SiGe source / drain can be manufactured by the same process described herein, or by other methods, such as high temperature epitaxy (e.g., a temperature above about 500° C., such as between about 600° C. and about 700° C.).

[0043] Figure 3B A cross section of a FinFET 350 is depicted in accordance with some embodiments. An epitaxial silicon compound layer 366 is deposited on a surface 352 of each fin 354 and extends above an upper surface 351 of a dielectric material 254 (the dielectric material 254 is also disposed on the upper surface 352 of the dielectric material 254). Figure 2 ). A silicon compound layer 366 may also be deposited on a surface 362 of the dielectric material 358, and an etch-back process may be performed to remove the silicon compound layer 366 deposited on the surface 362 of the dielectric material 358. The silicon compound layer 366 may be a source or drain of a FinFET device, and may be a silicon-based and / or germanium-based material. The silicon compound layer 366 may be formed in an epitaxial deposition chamber available from Applied Materials by the epitaxial deposition process described herein. In one embodiment, the silicon compound layer 366 is silicon doped with phosphorus, and the FinFET device is an n-type FET. In another embodiment, the silicon compound layer 366 is silicon germanium doped with boron or gallium, and the FinFET device is a p-type FET. Each silicon compound layer 366 has a surface 363 that is recessed from the surface 362 of the dielectric material 358.

[0044] According to the embodiments described herein, the epitaxial silicon compound layer 366 is selectively deposited in the source / drain regions. Selective silicon-containing film growth can be performed when the substrate surface has more than one material exposed thereon (such as exposed single crystal silicon surface regions) and has features covered with dielectric materials (such as SiO and SiN layers). The silicon compound layer 366 is composed, for example, of a doped SiGe layer located at Figure 3B The device shown has a germanium concentration of, for example, about 1 atomic % to about 30 atomic % (such as about 20 atomic %) on either side of the gate and a 1×10 15 Atom / cm 3 About 5×10 21 Atom / cm 3 (such as about 5×10 19 Atom / cm 3 About 5×10 21 Atom / cm 3 , or about 1×10 18 Atom / cm 3 About 5×10 21 Atom / cm 3 , or about 1×10 20 Atom / cm 3 About 2.5×10 21 Atom / cm 3的 )'s dopant (e.g., B or P) concentration.

[0045] Although not shown, further operations may be performed on the substrate. For example, a metal layer may be deposited over features of the substrate (e.g., a silicon-containing single crystal surface, such as a source region and a drain region of the substrate), and then the substrate and the layers formed thereon may be annealed. The metal layer may include cobalt, nickel, or titanium, among other metals. During the annealing process, the silicon compound layer is converted to a metal silicide layer. For example, when a metal (e.g., cobalt) is deposited as the metal layer, the resulting metal silicide layer is cobalt silicide.

[0046] The process described herein can be used to deposit silicon compound films (e.g., channel, source / drain, source / drain extensions, elevated source / drain, substrate, strained silicon, silicon on insulator, and contact plugs) for bipolar (e.g., base, emitter, collector, emitter contact), BiCMOS (e.g., base, emitter, collector, emitter contact), and traditional planar or FinFET CMOS. Other embodiments of the process teach the growth of silicon films that can be used as gates, base contacts, collector contacts, emitter contacts, elevated source / drain, and other uses. Other devices include field effect transistors (FETs).

[0047] In the process of the present disclosure, a silicon-containing compound (e.g., film, layer, and material) is grown or deposited by a chemical vapor deposition (CVD) process, wherein the CVD process includes an atomic layer deposition (ALD) process and / or an atomic layer epitaxy (ALE) process. Chemical vapor deposition includes the use of many techniques, such as plasma-assisted CVD (PA-CVD), atomic layer CVD (ALCVD), organometallic or metal-organic CVD (OMCVD or MOCVD), laser-assisted CVD (LA-CVD), ultraviolet CVD (UV-CVD), hot wire CVD (HWCVD), reduced pressure CVD (RP-CVD), and ultra-high vacuum CVD (UHV-CVD). The process of the present disclosure can be performed in an apparatus known in the art of ALE, CVD, and ALD processing. The apparatus contacts a source gas with a substrate on which the silicon-containing compound is grown. An exemplary epitaxial chamber that can be used to grow the silicon-containing compounds described herein is a Centura® RP EPI chamber available from Applied Materials, Inc., Santa Clara, California. An exemplary epitaxial chamber is Figure 4 is shown in and described below.

[0048] Figure 4 4 is a cross-sectional view of a thermal processing chamber 400 that can be used to perform the epitaxial processes described herein. The processing chamber 400 includes a chamber body 402, a support system 404, and a controller 406. The chamber body 402 includes an upper portion 412 and a lower portion 414. The upper portion 412 includes an area within the chamber body 402 between an upper dome 416 and a substrate 410. The lower portion 414 includes an area within the chamber body 402 between a lower dome 430 and a bottom of the substrate 410. The deposition process generally occurs on an upper surface of the substrate 410 that is exposed to and within the upper portion 412.

[0049] The support system 404 includes components for performing and monitoring a predetermined process, such as the growth or deposition of a thin film in the process chamber 400 as described herein. The controller 406 is coupled to the support system 404 and is adapted to control the process chamber 400 and the support system 404. The controller 406 includes a central processing unit (CPU), memory, and support circuits.

[0050] The processing chamber 400 includes a plurality of heat sources, such as lamps 435, adapted to provide thermal energy to components positioned within the substrate processing chamber 400. For example, the lamps 435 may be adapted to provide thermal energy to the substrate 410, the pedestal 426 for supporting the substrate in the processing chamber 400, and / or the preheat ring 423. The lower dome 430 may be formed of an optically transparent material, such as quartz, to facilitate the passage of thermal radiation therethrough. It is contemplated that the lamps 435 may be positioned to provide thermal energy through the upper dome 416 as well as through the lower dome 430.

[0051] The chamber body 402 includes a plurality of plenums formed therein. The plenums are in fluid communication with one or more gas sources 476, such as carrier gases, and one or more precursor sources 478, such as process gases (e.g., deposition gases and dopant source gases). For example, a first plenum 420 may be adapted to provide a deposition gas 450 therethrough into an upper portion 412 of the chamber body 402, while a second plenum 421 may be adapted to exhaust the deposition gas 450 from the upper portion 412. In this manner, the deposition gas 450 may flow parallel to the upper surface of the substrate 410.

[0052] In the case of using a liquid precursor (e.g., tetrasilane), the thermal processing chamber 400 may include a liquid evaporator 482 in fluid communication with a liquid precursor source 480. The liquid evaporator 482 is used to evaporate the liquid precursor to be delivered to the thermal processing chamber 400. Although not shown, it is contemplated that the liquid precursor source 480 may include, for example, one or more precursor liquid and solvent liquid ampoules, a shutoff valve, and a liquid flow meter (LFM). As an alternative to the liquid evaporator, a bubbler may be used to deliver the liquid precursor to the chamber. In this case, the liquid precursor ampoule is coupled to the process volume of the chamber via the bubbler.

[0053] The substrate support assembly 432 is positioned in the lower portion 414 of the chamber body 402. The substrate support assembly 432 is shown supporting the substrate 410 in a processing position. The substrate support assembly 432 includes a base support 427 formed of an optically transparent material and a base 426 supported by the base support 427. A support rod 437 couples the base support 427 to the base 426. The shaft 460 of the base support 427 is positioned within the shield 431 to which the lifting pin contact 442 is coupled. The base support 427 is rotatable to facilitate the rotation of the substrate 410 about its center during processing. The rotation of the base support 427 is facilitated by a motor or a belt and a motor (not shown). An actuator 429 is coupled to the base support 427 and is used to lift and retract the shaft to raise and lower the support. The shield 431 is generally fixed in place and therefore does not rotate during processing.

[0054] Lift pins 433 are disposed through openings (not labeled) formed in the pedestal support 427. Lift pins 433 can be vertically actuated by contacting movable lift pin contacts 442, and are adapted to contact the underside of substrate 410 to lift substrate 410 from a processing position (as shown) to a substrate removal position, and to support a newly loaded substrate from a loading position to a processing position on pedestal 426. Lift pin contacts 442 are moved up and down, or positioned stationarily as the support moves up and down, so that the bottoms of lift pins 433 contact lift pin contacts 442, causing them to stop moving downward as the support continues to move downward. Preheat ring 423 is removably disposed on lower liner 440, which is coupled to chamber body 402. Preheat ring 423 is disposed around the interior volume of chamber body 402 and surrounds substrate 410 when substrate 410 is in the processing position. The preheat ring 423 facilitates preheating of process gases as they enter the chamber body 402 through the plenum 420 adjacent the preheat ring 423 and reduces the size of the opening between the upper and lower volumes of the chamber.

[0055] The central window portion 415 of the upper dome 416 and the bottom portion 417 of the lower dome 430 are formed of an optically transparent material such as quartz.

[0056] The process described herein allows for the selective growth of silicon germanium compounds on a substrate surface or a surface of a layer previously formed on a substrate surface (e.g., a material, film, and / or layer) at low temperatures (e.g., about 450° C. or less), wherein deposition on crystalline silicon surfaces is nearly completely selective at temperatures of about 400° C. or less, such as about 350° C. or less. The process advantageously provides a 1×10 15 Atom / cm 3 About 5×10 21 Atom / cm 3 The boron concentration (such as about 5×10 19 Atom / cm 3 About 5×10 21 Atom / cm 3 , or about 1×10 18 Atom / cm 3 About 5×10 21 Atom / cm 3 , or about 1×10 20 Atom / cm 3 About 2.5×10 21 Atom / cm 3 In addition, the use of dopants such as boron advantageously allows the growth of epitaxial silicon germanium films at low temperatures.

[0057] It has been found that in order to achieve greater deposition or growth selectivity for crystalline layers than for polycrystalline silicon or amorphous layers in a silicon germanium epitaxial growth or deposition process at lower temperatures, a higher germanium or germanium halide (such as digermane) should be used as a germanium source. For example, a germanium-containing layer can be formed using digermane at temperatures as low as about 300°C. Silicon sources such as silane or lower silanes (such as silane and dichlorosilane) can also be used in combination with higher germanium precursors to deposit SiGe material layers. If used alone, these lower silanes will not grow or deposit silicon-containing layers at temperatures below 400°C, but when combined with higher germanium (such as digermane), can be used to grow or deposit silicon-containing layers in combination with germanium deposition or growth. Since germanium growth in the form of higher order germananes, once tuned, may be selective relative to its growth or deposition on dielectrics (such as silicon-based dielectrics), whereas lower order silanes will not grow silicon on these silicon-based dielectrics at low temperatures, the silicon and germanium deposition (such as digermane and disilane) process becomes a selective silicon-germanium process at low temperatures. Silicon from silanes will not initiate on silicon materials, dielectric materials, or both at temperatures below about 400°C, but can initiate on silicon, dielectrics, or both at temperatures below about 400°C in the presence of Ge, although etchants can be used in conjunction with the deposition source gases to remove Si:Ge deposits that may be initiated on amorphous surfaces of the substrate. The germanium in the germanium precursor can activate the silicon substrate, making the silane reaction possible at temperatures below 400°C.

[0058] The etchant may be co-flowed with the silicon and germanium sources to further improve deposition or growth selectivity. The etchant is not limited to hydrogen chloride and may contain halogens, germanium and / or silicon in the molecule. In-situ doping of the deposited material may be achieved simultaneously by co-flowing dopant-containing substances such as diborane (for p-type) and phosphine (for n-type) with the silicon and germanium sources.

[0059] The computer system may execute instructions provided in a non-transitory computer readable medium. The non-transitory computer readable medium may include instructions for executing the methods described herein. Alternatively, instructions for executing the methods described herein may be added to the non-transitory computer readable medium. The non-transitory computer readable medium may include instructions that cause the computer system to control the substrate processing equipment to perform the processes described herein. The substrate processing chamber may be part of the substrate processing equipment. The computer system may be connected to one or more of the substrate processing chambers, valves for regulating source gases, dopant gases, etchant gases, and switches for regulating the temperature and pressure of various components of the substrate processing equipment.

[0060] The present disclosure provides, inter alia, the following embodiments, each of which may be considered to optionally include any alternative embodiments:

[0061] Item 1. A method for depositing a silicon germanium material on a substrate, comprising: positioning a substrate in a substrate processing chamber, the substrate having a dielectric material and a silicon-containing single crystal thereon; maintaining the substrate at a temperature of about 450°C or less; exposing the substrate to a process gas, the process gas comprising: a silicon source gas; a germanium source gas; an etchant gas; a carrier gas; and at least one dopant source gas; and epitaxially and selectively depositing a first silicon germanium material on the substrate.

[0062] Item 2. The method of Item 1, wherein the dopant source gas is a boron-containing dopant source gas, a phosphorus-containing dopant source gas, or an arsenic-containing dopant source gas.

[0063] Item 3. The method of Item 2, wherein the boron-containing dopant source gas is diborane.

[0064] Clause 4. The method of any one of clauses 1 to 3, wherein the etchant gas is one or more of HCl, HF, Cl2, HBr, Br2, SiCl4, SiHCl3, SiH2Cl2, GeCl4, and GeHCl3.

[0065] Clause 5. The method of any one of Clauses 1 to 4, wherein the silicon germanium material has a doped SiGe material having a density of about 1×10 15 Atom / cm 3 About 5×10 21 Atom / cm 3 of boron concentration.

[0066] Clause 6. The method of any one of Clauses 1 to 5, wherein the substrate is heated to a temperature of about 400° C. or less.

[0067] Item 7. A method as described in any one of Items 1 to 6, wherein the process gas includes: the silicon source gas having a flow rate of about 5 sccm to about 500 sccm; the germanium source gas having a flow rate of about 0.1 sccm to about 100 sccm; the carrier gas having a flow rate of about 1000 sccm to about 60,000 sccm; and the dopant source gas having a flow rate of about 0.01 sccm to about 3 sccm.

[0068] Item 8. The method of any one of Items 1 to 7, further comprising: exposing the substrate to a second process gas comprising a second silicon source gas and a second germanium source gas; and epitaxially and selectively depositing a second silicon germanium material on the substrate.

[0069] Item 9. The method of any one of Items 1 to 8, wherein the substrate processing chamber is pressurized to a pressure of about 0.1 Torr to about 200 Torr.

[0070] Item 10. A method for depositing silicon germanium material on a substrate, comprising: positioning a substrate in a substrate processing chamber, the substrate having a dielectric material and a silicon germanium single crystal thereon; maintaining the substrate at a temperature of about 450°C or less; exposing the substrate to a process gas, the process gas comprising: a silicon source gas; a germanium source gas; an etchant gas; a carrier gas; and at least one dopant source gas, the at least one dopant source gas comprising a boron-containing dopant source gas or a phosphorus-containing dopant source gas; and epitaxially and selectively depositing silicon germanium material on the substrate, the silicon germanium material having a resistivity of 0.3 mΩ·cm.

[0071] Item 11. The method of Item 10, wherein the boron-containing dopant source gas is diborane.

[0072] Item 12. The method of Item 10 or 11, wherein the substrate is heated to a temperature of about 400° C. or less.

[0073] Clause 13. The method of any one of Clauses 10 to 12, wherein the silicon source gas is silane, dichlorosilane, or disilane.

[0074] Item 14. The method of any one of Items 10 to 13, wherein the germanium source gas is digermane, trigermane, tetragermane, GeCl 4 , or GeHCl 3 .

[0075] Item 15. A method as described in any one of Items 10 to 14, wherein the process gas includes: the silicon source gas having a flow rate of about 5 sccm to about 500 sccm; the germanium source gas having a flow rate of about 0.1 sccm to about 100 sccm; the carrier gas having a flow rate of about 1000 sccm to about 60,000 sccm; and the dopant source gas having a flow rate of about 0.01 sccm to about 3 sccm.

[0076] Item 16. The method of any one of Items 10 to 15, wherein the substrate processing chamber is pressurized to a pressure of about 0.1 Torr to about 200 Torr.

[0077] Item 17. A method for depositing silicon germanium material on a substrate, comprising: positioning a substrate in a substrate processing chamber, the substrate having a dielectric material and a silicon-containing single crystal thereon; maintaining the substrate at a temperature of 400°C or lower; exposing the substrate to a process gas, the process gas comprising: a silicon source gas; a germanium source gas, the germanium source gas comprising germane or digermane; an etchant gas, the etchant gas comprising one or more of HCl, HF, Cl2, HBr, Br2, SiCl4, SiHCl3, SiH2Cl2, GeCl4 and GeHCl3; a carrier gas; and a dopant source gas, the dopant source gas comprising diborane; and epitaxially and selectively depositing a first silicon germanium material on the substrate.

[0078] Clause 18. The method of Clause 17, wherein the silicon source gas is silane, dichlorosilane, or disilane.

[0079] Item 19. A method as described in Item 17 or Item 18, wherein the process gas includes: the silicon source gas having a flow rate of about 5 sccm to about 500 sccm; the germanium source gas having a flow rate of about 0.1 sccm to about 100 sccm; the carrier gas having a flow rate of about 1000 sccm to about 60,000 sccm; and the dopant source gas having a flow rate of about 0.01 sccm to about 3 sccm.

[0080] Item 20. The method of any one of Items 17 to 19, wherein the substrate processing chamber is pressurized to a pressure of about 0.1 Torr to about 200 Torr.

[0081] Item 21. A non-transitory computer-readable medium comprising instructions that cause a computer system to control a substrate processing device to perform a process, comprising: positioning a substrate in a substrate processing chamber, the substrate having a dielectric material and a silicon-containing single crystal thereon; maintaining the substrate at a temperature of approximately 450°C or lower; exposing the substrate to a process gas, the process gas comprising: a silicon source gas; a germanium source gas; an etchant gas; a carrier gas; and at least one dopant source gas; and epitaxially and selectively depositing a first silicon germanium material on the substrate.

[0082] Item 22. The non-transitory computer-readable medium of Item 21, wherein the dopant source gas is a boron-containing dopant source gas, a phosphorus-containing dopant source gas, or an arsenic-containing dopant source gas.

[0083] Item 23. The non-transitory computer-readable medium of Item 22, wherein the boron-containing dopant source gas is diborane.

[0084] Clause 24. The non-transitory computer-readable medium of any of Clauses 21 to 23, wherein the etchant gas is one or more of HCl, HF, Cl2, HBr, Br2, SiCl4, SiHCl3, SiH2Cl2, GeCl4, and GeHCl3.

[0085] Clause 25. The non-transitory computer-readable medium of any one of Clauses 21 to 24, wherein the silicon germanium material has a doped SiGe material having a doping ratio of about 1×10 15 Atom / cm 3 About 5×10 21 Atom / cm 3 of boron concentration.

[0086] Item 26. The non-transitory computer readable medium of any one of Items 21 to 25, wherein the substrate is heated to a temperature of about 400° C. or less.

[0087] Item 27. A non-transitory computer-readable medium as in any one of Items 21 to 26, wherein the process gas comprises: the silicon source gas having a flow rate of about 5 sccm to about 500 sccm; the germanium source gas having a flow rate of about 0.1 sccm to about 100 sccm; the carrier gas having a flow rate of about 1000 sccm to about 60,000 sccm; and the dopant source gas having a flow rate of about 0.01 sccm to about 3 sccm.

[0088] Item 28. The non-transitory computer-readable medium of any of Items 21 to 27, further comprising: exposing the substrate to a second process gas comprising a second silicon source gas and a second germanium source gas; and epitaxially and selectively depositing a second silicon germanium material on the substrate.

[0089] Item 29. The non-transitory computer readable medium of any one of Items 21 to 28, wherein the substrate processing chamber is pressurized to a pressure of about 0.1 Torr to about 200 Torr.

[0090] Item 30. A non-transitory computer-readable medium, the non-transitory computer-readable medium comprising instructions that cause a computer system to control a substrate processing device to perform a process, the process comprising: positioning a substrate in a substrate processing chamber, the substrate having a dielectric material and a silicon germanium single crystal thereon; maintaining the substrate at a temperature of approximately 450°C or lower; exposing the substrate to a process gas, the process gas comprising: a silicon source gas; a germanium source gas; an etchant gas; a carrier gas; and at least one dopant source gas, the at least one dopant source gas comprising a boron-containing dopant source gas or a phosphorus-containing dopant source gas; and epitaxially and selectively depositing a silicon germanium material on the substrate, the silicon germanium material having a resistivity of 0.3 mΩ·cm.

[0091] Item 31. The non-transitory computer-readable medium of Item 30, wherein the boron-containing dopant source gas is diborane.

[0092] Item 32. The non-transitory computer readable medium of Item 30 or Item 31, wherein the substrate is heated to a temperature of about 400° C. or less.

[0093] Clause 33. The non-transitory computer-readable medium of any one of Clauses 30 to 32, wherein the silicon source gas is silane, dichlorosilane, or disilane.

[0094] Clause 34. The non-transitory computer-readable medium of any one of Clauses 30 to 33, wherein the germanium source gas is digermane, trigermane, tetragermane, GeCl 4 , or GeHCl 3 .

[0095] Item 35. A non-transitory computer-readable medium as in any one of Items 30 to 34, wherein the process gas comprises: the silicon source gas having a flow rate of about 5 sccm to about 500 sccm; the germanium source gas having a flow rate of about 0.1 sccm to about 100 sccm; the carrier gas having a flow rate of about 1000 sccm to about 60,000 sccm; and the dopant source gas having a flow rate of about 0.01 sccm to about 3 sccm.

[0096] Item 36. The non-transitory computer readable medium of any one of Items 30 to 35, wherein the substrate processing chamber is pressurized to a pressure of about 0.1 Torr to about 200 Torr.

[0097] Item 37. A non-transitory computer-readable medium, the non-transitory computer-readable medium comprising instructions for causing a computer system to control a substrate processing device to perform a process, comprising: positioning a substrate in a substrate processing chamber, the substrate having a dielectric material and a silicon-containing single crystal thereon; maintaining the substrate at a temperature of 400°C or lower; exposing the substrate to a process gas, the process gas comprising: a silicon source gas; a germanium source gas, the germanium source gas comprising germane or digermane; an etchant gas, the etchant gas comprising one or more of HCl, HF, Cl2, HBr, Br2, SiCl4, SiHCl3, SiH2Cl2, GeCl4 and GeHCl3; a carrier gas; and a dopant source gas, the dopant source gas comprising diborane; and epitaxially and selectively depositing a first silicon germanium material on the substrate.

[0098] Clause 38. The non-transitory computer-readable medium of Clause 37, wherein the silicon source gas is silane, dichlorosilane, or disilane.

[0099] Item 39. A non-temporary computer-readable medium as in Item 37 or Item 38, wherein the process gas comprises: the silicon source gas having a flow rate of about 5 sccm to about 500 sccm; the germanium source gas having a flow rate of about 0.1 sccm to about 100 sccm; the carrier gas having a flow rate of about 1000 sccm to about 60,000 sccm; and the dopant source gas having a flow rate of about 0.01 sccm to about 3 sccm.

[0100] Item 40. The non-transitory computer readable medium of any one of Items 37 to 39, wherein the substrate processing chamber is pressurized to a pressure of about 0.1 Torr to about 200 Torr.

[0101] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope of the disclosure is to be determined by the claims that follow.

Claims

1. A method for depositing silicon germanium material on a substrate, comprising: Positioning the substrate in a substrate processing chamber, the substrate having a dielectric material and a silicon single crystal, a silicon germanium single crystal, a silicon germanium single crystal, a doped silicon layer, a doped germanium layer, an undoped silicon layer or an undoped germanium layer; maintaining the substrate at a temperature of about 400° C. or less; Co-flowing a process gas and an etchant gas into the substrate processing chamber, the process gas comprising: Silicon source gas, Germanium source gas, Carrier gas, and dopant source gas; exposing the substrate to a process gas and an etchant gas, wherein the silicon source gas has a flow rate of about 5 sccm to about 500 sccm, the germanium source gas has a flow rate of about 0.1 sccm to about 100 sccm, the carrier gas has a flow rate of about 11,000 sccm to about 60,000 sccm, the dopant source gas has a flow rate of about 0.01 sccm to about 0.9 sccm, and the etchant gas has a flow rate of about 5 sccm to about 90 sccm; and A first silicon germanium material is epitaxially and selectively deposited on the substrate. 2 . The method of claim 1 , wherein the dopant source gas is a boron-containing dopant source gas, a phosphorus-containing dopant source gas, or an arsenic-containing dopant source gas. The method of claim 2 , wherein the boron-containing dopant source gas is diborane.

4. The method of claim 1, wherein the etchant gas is one or more of HCl, HF, Cl2, HBr, Br2, SiCl4, SiHCl3, SiH2Cl2, GeCl4, and GeHCl3.

5. The method according to claim 1, wherein the silicon germanium material has a thickness from about 1×10 15 Atom / cm 3 About 5×10 21 Atom / cm 3 boron, phosphorus or arsenic concentrations.

6. The method according to claim 1, further comprising: exposing the substrate to a second process gas including a second silicon source gas and a second germanium source gas; and A second silicon germanium material is epitaxially and selectively deposited on the substrate.

7. The method according to claim 1, wherein: The germanium source gas includes GeH4, Ge2H6 or a combination thereof; The silicon source gas is silane, dichlorosilane or disilane; or A combination of the above.

8. A method for depositing silicon germanium material on a substrate, comprising: positioning the substrate within a substrate processing chamber; maintaining the substrate at a temperature of about 400° C. or less; Co-flowing a process gas and an etchant gas into the substrate processing chamber, the process gas comprising: Silicon source gas, Germanium source gas, Carrier gas, and dopant source gas; exposing the substrate to a process gas and an etchant gas, wherein the silicon source gas has a flow rate of about 5 sccm to about 500 sccm, the germanium source gas has a flow rate of about 0.1 sccm to about 100 sccm, the carrier gas has a flow rate of about 11,000 sccm to about 60,000 sccm, the dopant source gas has a flow rate of about 0.01 sccm to about 0.9 sccm, and the etchant gas has a flow rate of about 5 sccm to about 90 sccm; and The silicon germanium material is epitaxially and selectively deposited on the substrate, the silicon germanium material having a resistivity of about 0.3 mΩ·cm.

9. The method of claim 8, wherein the dopant source gas is diborane.

10. The method of claim 8, wherein the substrate is maintained at a temperature of about 300°C or less.

11. The method according to claim 8, wherein the silicon source gas is silane, dichlorosilane or disilane.

12. The method of claim 8, wherein the germanium source gas is germane, digermane, trigermane, tetragermane, GeCl4 or GeHCl3. 13 . The method according to claim 10 , wherein the substrate comprises a dielectric material and comprises a silicon single crystal, a silicon germanium single crystal, a silicon germanium single crystal, a doped silicon layer, a doped germanium layer, an undoped silicon layer or an undoped germanium layer.

14. The method of claim 8, wherein the substrate processing chamber is pressurized to a pressure from about 0.1 Torr to about 200 Torr. 15 . The method of claim 8 , wherein the dopant source gas is a boron-containing dopant source gas, a phosphorus-containing dopant source gas, or an arsenic-containing dopant source gas.

16. A non-transitory computer readable medium comprising instructions for causing a computer system to control a substrate processing apparatus to perform a process comprising: positioning a substrate within a substrate processing chamber, the substrate having a dielectric material and a silicon-containing single crystal thereon; maintaining the substrate at a temperature of about 400° C. or less; Co-flowing a process gas and an etchant gas into the substrate chamber, the process gas comprising: Silicon source gas, Germanium source gas, Carrier gas, and dopant source gas; exposing the substrate to a process gas and an etchant gas, wherein the silicon source gas has a flow rate of about 5 sccm to about 500 sccm, the germanium source gas has a flow rate of about 0.1 sccm to about 100 sccm, the carrier gas has a flow rate of about 11,000 sccm to about 60,000 sccm, the dopant source gas has a flow rate of about 0.01 sccm to about 0.9 sccm, and the etchant gas has a flow rate of about 5 sccm to about 90 sccm; and A first silicon germanium material is epitaxially and selectively deposited on the substrate. 17 . The non-transitory computer readable medium of claim 16 , wherein the dopant source gas is a boron-containing dopant source gas, a phosphorus-containing dopant source gas, or an arsenic-containing dopant source gas.

18. The non-transitory computer readable medium of claim 17, wherein the boron-containing dopant source gas is diborane.

19. The non-transitory computer readable medium of claim 16, wherein the etchant gas comprises one or more of HF, Cl2, HBr, Br2, SiCl4, SiHCl3, SiH2Cl2, GeCl4, or GeHCl3.

20. The non-transitory computer readable medium of claim 16, wherein: The silicon source gas is silane, dichlorosilane or disilane; The germanium source gas is germane, digermane, trigermane, tetragermane, GeCl4 or GeHCl3; or A combination of the above.

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