Semiconductor process chamber and liquid draining method

Abstract

The application provides a semiconductor process chamber and a liquid draining method. The semiconductor process chamber comprises a first temperature control body arranged on the outer wall of a chamber body; the first temperature control body has a temperature control channel for the flow of heat exchange liquid, and the temperature control channel has a plurality of first pipe sections and a second pipe section; the two ends of the first pipe section are connected with the pipe sections higher than the end portions of the first pipe section, and the second pipe section is located at the bottom end of the temperature control channel and extends horizontally; the first temperature control body further has an auxiliary liquid draining channel, and the auxiliary liquid draining channel is communicated with the plurality of first pipe sections and the second pipe section; the semiconductor process chamber further comprises a switch assembly arranged in the auxiliary liquid draining channel; the switch assembly is used for blocking the flow of liquid in the auxiliary liquid draining channel in a first state; and the switch assembly is used for making the liquid in the plurality of first pipe sections flow into the second pipe section through the auxiliary liquid draining channel in a second state, so that the damage of the plurality of first pipe sections caused by the freezing of the liquid accumulation in the low-temperature environment is avoided.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor technology, specifically relating to a semiconductor process chamber and a draining method. Background Technology

[0002] Because the etching rate and depth are extremely sensitive to process temperature, when performing the process inside the process chamber, it is usually necessary to set up a process chamber outside the process chamber to adjust the process temperature in real time. Existing process chambers typically use liquids such as deionized water for temperature control. Specifically, various shapes of deionized water channels are set up outside the process chamber to use deionized water to regulate the process chamber temperature.

[0003] However, to ensure the uniform distribution of deionized water flow channels, these channels are often designed with multiple bends, such as spirals or S-shapes. This makes it difficult for water to drain from the flow channels. Consequently, in cold weather, if the machine needs to be shut down for maintenance, the residual liquid in the flow channels will freeze. The expansion caused by the freezing liquid and the resulting localized low temperature may damage the structure of the process chamber, thus reducing its service life. Summary of the Invention

[0004] This invention at least partially solves the problem of difficulty in completely draining heat exchange fluid in existing temperature-controlled channels, and provides a semiconductor process chamber and a method for draining the fluid.

[0005] This invention provides a semiconductor process chamber; it includes:

[0006] The main body of the chamber;

[0007] The temperature control assembly includes a first temperature control body disposed on the outer wall of the chamber body; the first temperature control body has a temperature control channel for the flow of heat exchange fluid, and the temperature control channel has multiple first pipe segments and second pipe segments, the two ends of the first pipe segments are respectively connected to pipe segments higher than their ends, and the second pipe segments are located at the bottom end of the temperature control channel and extend horizontally; the first temperature control body also has an auxiliary drainage channel, and the auxiliary drainage channel is connected to the multiple first pipe segments and second pipe segments;

[0008] A switching assembly is disposed in the auxiliary drainage channel; the switching assembly has a first state and a second state; in the first state, the switching assembly is used to block the flow of liquid in the auxiliary drainage channel; in the second state, the switching assembly is used to allow liquid in the multiple first pipe sections to flow into the second pipe section through the auxiliary drainage channel.

[0009] Optionally, the auxiliary liquid drainage channel is located at the side of the plurality of first pipe segments and the second pipe segment; the auxiliary liquid drainage channel comprises a plurality of communication segments and a plurality of closed segments arranged alternately; the plurality of communication segments correspond to the plurality of first pipe segments and the second pipe segment one by one in communication; the plurality of closed segments are located between two adjacent first pipe segments and between the second pipe segment and the first pipe segment adjacent to the second pipe segment;

[0010] When the switch assembly is in the first state, the switch assembly blocks each closed segment; when the switch assembly is in the second state, the switch assembly communicates all the communication segments with the corresponding closed segments, so as to communicate the auxiliary liquid drainage channel.

[0011] Optionally, the switch assembly comprises a switch rod; the switch rod is arranged inside the auxiliary liquid drainage channel and extends along the auxiliary liquid drainage channel;

[0012] The switch rod has at least one convex part and at least one concave part, and the convex part and the concave part are arranged alternately along the length direction of the switch rod; the convex part is arranged one by one corresponding to the communication segment, and the length of the convex part is less than the length of the corresponding communication segment;

[0013] The outer peripheral surface of the convex part can be sealingly matched with the inner wall of the closed segment; the outer peripheral surface of the concave part is arranged spaced apart from the inner wall of the closed segment;

[0014] When the switch assembly is in the first state, each convex part is sealingly matched with the inner wall of the corresponding closed segment, so as to block the liquid in the corresponding first pipe segment from flowing into the communication segment;

[0015] When the switch assembly is in the second state, the convex part is located in the corresponding communication segment, and the concave part is located in the closed segment, so that the liquid in the first pipe segment flows into the communication segment.

[0016] Optionally, the first pipe segment extends along a first direction; the temperature control channel further comprises a plurality of third pipe segments extending along a second direction and a plurality of fourth pipe segments extending along the first direction;

[0017] The plurality of third pipe segments and the plurality of fourth pipe segments can be connected with the plurality of first pipe segments and the second pipe segment to form one temperature control channel;

[0018] The plurality of first pipe segments are distributed spaced apart along the second direction, and each first pipe segment is in communication with two third pipe segments higher than both ends of the first pipe segment;

[0019] A plurality of fourth pipe segments are spaced apart along the second direction, and the fourth pipe segments are in communication with two third pipe segments lower than both ends of the fourth pipe segments, or are in communication with a third pipe segment higher than one end of the fourth pipe segment and a fourth pipe segment lower than one end of the fourth pipe segment, respectively.

[0020] Optionally, the first direction is a horizontal direction, and the second direction is a vertical direction.

[0021] The auxiliary liquid discharge pipeline extends along a vertical direction.

[0022] Optionally, a mounting through hole in communication with the auxiliary liquid discharge channel is further formed in the bottom surface of the first temperature control body, the mounting through hole is coaxially arranged with the auxiliary liquid discharge channel, and a hole wall of the mounting through hole is in sealing cooperation with an outer periphery of the switch rod; the switch rod extends to the outside of the first temperature control body through the mounting through hole.

[0023] The semiconductor process chamber further comprises a driving assembly; the driving assembly is connected with an end portion of the switch rod, and is used for driving the switch rod to slide inside the auxiliary liquid discharge channel.

[0024] Optionally, the temperature control channel has a first port and a second port, and the first port and the second port are both in communication with an external liquid source; the first port is arranged at an end portion of the second pipe segment.

[0025] The semiconductor process chamber further comprises a control assembly; wherein the control assembly is used for controlling the first port to be in communication with the heat exchange liquid in a temperature control stage, and to stop being in communication with the heat exchange liquid in a first liquid discharge stage and a second liquid discharge stage, and is used for controlling the second port to discharge the heat exchange liquid in the temperature control stage and the first liquid discharge stage; the control assembly is further used for controlling the driving assembly to drive the switch rod to slide to the first state in the first liquid discharge stage, and to drive the switch rod to slide to the second state in the second liquid discharge stage.

[0026] Optionally, the first port is connected with the external liquid source and an external gas source through a first three-way valve respectively, and the second port is connected with the external liquid source and the external gas source through a second three-way valve respectively.

[0027] The control assembly is further used for controlling the first three-way valve to make the first port in communication with the external gas source in the first liquid discharge stage, and controlling the second three-way valve to make the second port in communication with the external liquid source, so as to utilize gas to push the liquid inside the temperature control channel to be discharged; and is further used for controlling the second three-way valve to make the second port in communication with the external gas source in the second liquid discharge stage, so as to utilize gas to push the liquid inside the second pipe segment to be discharged.

[0028] Optionally, the detection assembly further comprises two flow detectors respectively connected with the first port and the second port; the two flow detectors are respectively configured to detect the liquid flow at the first port and the second port and send the detection results to the control assembly;

[0029] The control assembly is further configured to continuously determine whether the liquid flow at the second port is less than or equal to a first preset flow value during the first liquid discharge stage; if yes, it is determined that the first liquid discharge stage is completed.

[0030] The control assembly is further configured to continuously determine whether the liquid flow at the first port is less than or equal to a second preset flow value during the second liquid discharge stage; if yes, it is determined that the second liquid discharge stage is completed.

[0031] Optionally, the detection assembly further comprises two humidity detectors respectively arranged at the first port and the second port of the temperature control channel; the two humidity detectors are respectively configured to detect the humidity at the first port and the second port and send the detection results to the control assembly.

[0032] The control assembly is further configured to control the second three-way valve to communicate the second port with the external gas source after the second liquid discharge stage is completed, so as to dry the temperature control channel by conveying gas inside the temperature control channel; and continuously determine whether the humidity difference between the first port and the second port is less than or equal to a preset humidity difference value; if yes, control the second three-way valve to disconnect the second port from the external gas source.

[0033] Optionally, the heating assembly is connected with the external gas source and configured to heat the gas output by the external gas source.

[0034] The control assembly is further configured to control the heating assembly to be turned on when the temperature control channel is communicated with the external gas source, and to be turned off when the temperature control channel is disconnected from the external gas source.

[0035] Optionally, the number of the first temperature control bodies is two; the two first temperature control bodies are respectively arranged on opposite sides of the chamber body.

[0036] The temperature control assembly further comprises a second temperature control body, which is arranged on the outer wall of the chamber body and adjacent to the two first temperature control bodies; the second temperature control body has an auxiliary temperature control channel therein.

[0037] The auxiliary temperature control channel comprises a fifth pipe section, a sixth pipe section and a seventh pipe section; one end of the fifth pipe section and the sixth pipe section is communicated with the second port of the two temperature control channels respectively, and the other end of the fifth pipe section and the sixth pipe section is communicated with one end of the seventh pipe section; the other end of the seventh pipe section is communicated with the external liquid source.

[0038] As another technical solution, the application further provides a liquid draining method applied to the semiconductor process chamber as described above, which comprises:

[0039] In the first liquid draining stage, the switch assembly of the semiconductor process chamber is controlled to be in a first state; and the heat exchange liquid is controlled to be drained in the temperature control channel in a preset circulation direction;

[0040] In the second liquid draining stage, the switch assembly is controlled to be in a second state; and the remaining heat exchange liquid is controlled to be drained in the temperature control channel in a direction opposite to the preset circulation direction.

[0041] Optionally, the control of the heat exchange liquid to be normally drained in the temperature control channel in the circulation direction comprises: the first port of the temperature control channel is controlled to be communicated with only the external gas source, and the second port of the temperature control channel is controlled to be communicated with only the external liquid source, so as to utilize the gas to push the liquid in the temperature control channel to be drained out through the second port;

[0042] The control of the heat exchange liquid to be drained in the temperature control channel in the direction opposite to the circulation direction comprises: the first port is controlled to be communicated with only the external liquid source, and the second port is controlled to be communicated with only the external gas source, so as to utilize the gas to push the liquid in the second pipe section to be drained out.

[0043] Optionally, after the second liquid draining stage is completed, a drying stage is further included, and the drying stage comprises:

[0044] The second port is controlled to be communicated with the external gas source, so as to utilize the gas conveyed in the temperature control channel to dry the temperature control channel;

[0045] The humidity at the first port and the second port is continuously detected, and the humidity difference between the first port and the second port is calculated, and it is continuously judged whether the humidity difference is less than or equal to a preset humidity difference value; if yes, the second port is controlled to be disconnected with the external gas source.

[0046] The application has the following beneficial effects:

[0047] The semiconductor process chamber provided by the embodiment of the present application is characterized in that: a temperature control channel and an auxiliary liquid discharge channel are arranged in the first temperature control body, the auxiliary liquid discharge channel is communicated with a plurality of first pipe sections in the temperature control channel where liquid is prone to accumulate, the two ends of the first pipe section are respectively connected with pipe sections higher than the end portions of the first pipe section, and the auxiliary liquid discharge channel is further communicated with a second pipe section at the bottom end of the temperature control channel, so as to make the liquid accumulated in the plurality of first pipe sections flow downward to the second pipe section through the auxiliary liquid discharge channel. In addition, the process chamber further has a switch assembly having a first state and a second state; in the first state, the switch assembly is used to block the flow of liquid in the auxiliary liquid discharge channel, so as to enable the heat exchange liquid to normally flow in the temperature control channel during the temperature control stage; in the second state, the switch assembly is used to make the liquid in the plurality of first pipe sections flow into the second pipe section through the auxiliary liquid discharge channel, so as to avoid the liquid accumulation from being frozen in the low-temperature environment and causing damage to the plurality of first pipe sections. BRIEF DESCRIPTION OF DRAWINGS

[0048] Figure 1 A structural diagram of an existing semiconductor process chamber;

[0049] Figure 2 A structural schematic diagram of a semiconductor process chamber (hidden chamber body) provided by the embodiment of the present application;

[0050] Figure 3 A partial sectional view of a first temperature control body provided by the embodiment of the present application;

[0051] Figure 4 A structural schematic diagram of a first temperature control body provided by the embodiment of the present application;

[0052] Figure 5 A partial sectional view of the A-A direction of Figure 3

[0053] Figure 6 A partial sectional view of a first temperature control body and a switch assembly provided by the embodiment of the present application;

[0054] Figure 7 A structural schematic diagram of a switch rod provided by the embodiment of the present application;

[0055] Figure 8 A structural schematic diagram of a second temperature control body provided by the embodiment of the present application;

[0056] Figure 9 A control principle schematic diagram of a control assembly of a semiconductor process chamber provided by the embodiment of the present application. DETAILED DESCRIPTION

[0057] In order for those skilled in the art to better understand the technical solutions of the present application, the present application will be further described in detail below with reference to the drawings and specific embodiments.​

[0058] It is understood that the specific embodiments and accompanying drawings described herein are merely for explaining the invention and are not intended to limit the invention.

[0059] It is understood that, without conflict, the various embodiments of the present invention and the features thereof can be combined with each other.

[0060] It is understood that, for ease of description, the accompanying drawings of this invention only show the parts related to the embodiments of this invention, while the parts unrelated to the embodiments of this invention are not shown in the drawings.

[0061] It is understood that, without conflict, the functions and steps marked in the flowcharts and block diagrams of the embodiments of the present invention may occur in a different order than that marked in the accompanying drawings.

[0062] In existing technologies, a temperature-controlled channel 01 for the flow of deionized water is typically provided outside the semiconductor process chamber to achieve temperature control of the process chamber using deionized water. Figure 1 For example, it illustrates a common configuration of the temperature control channel 01. Specifically, the temperature control channel 01 includes a flow equalization groove 011 located at the upper part of the cavity, at least two serpentine flow channels 012 located on the side wall of the cavity, and a confluence cavity (not shown in the figure) located at the bottom of the cavity. Figure 1 As shown, the serpentine flow channel 012 is roughly S-shaped, with water flowing into each channel through inlet 012a and out through outlet 012b. The parallel extending pipe section 012c within the serpentine flow channel 012, i.e., the low-lying area, often fails to drain properly due to the weight of the deionized water and the obstruction from the pipe sections on either side, leading to water accumulation in the low-lying area. When the ambient temperature is low, this accumulated deionized water is prone to freezing, potentially causing equipment damage.

[0063] To address the aforementioned technical problems, a semiconductor process chamber is provided, for example, for use in etching equipment. The semiconductor process chamber includes a chamber body, a temperature control assembly, and a switching assembly.

[0064] The main body of the chamber consists of an outer wall and an inner cavity, with the inner cavity used for semiconductor processes.

[0065] like Figure 2 and Figure 3As shown, the temperature control assembly comprises a first temperature control body 1 arranged on the outer wall of the chamber body. The first temperature control body 1 has a temperature control channel 11 for flowing of heat exchange liquid, and the heat exchange liquid is for example deionized water or liquid medium such as perfluoropolyether. The temperature control channel 11 has a plurality of first pipe segments 111 and a second pipe segment 112. The two ends of the first pipe segment 111 are connected with the pipe segments higher than the ends, which causes the first pipe segment 111 to be a low-lying area prone to liquid accumulation. The second pipe segment 112 is located at the bottom end of the temperature control channel 11 and extends horizontally. The first temperature control body 1 also has an auxiliary liquid discharge channel 12, which is in communication with the second pipe segment 112 and the plurality of first pipe segments 111, i.e. in communication with the horizontal pipe segment at the bottom end and the pipe segment prone to liquid accumulation.

[0066] As shown, the switch assembly 2 is arranged in the auxiliary liquid discharge channel 12 and has a first state and a second state. Specifically, when the switch assembly 2 is in the first state, the switch assembly 2 is used to block the flow of liquid in the auxiliary liquid discharge channel 12, so that the heat exchange liquid can normally flow inside the temperature control channel 11 during the temperature control stage. When the switch assembly 2 is in the second state, the switch assembly 2 is used to make the liquid in the plurality of first pipe segments 111 flow into the second pipe segment 112 through the auxiliary liquid discharge channel, so that the liquid difficult to discharge from the first pipe segment 111 is discharged into the second pipe segment 112 through the auxiliary liquid discharge channel 12, thereby avoiding the liquid accumulation to be frozen in the low-temperature environment and causing damage to the first pipe segment. Figure 4 In some embodiments, the auxiliary liquid discharge channel 12 is located at the side of the first pipe segment 111 and the second pipe segment 112. Specifically, as shown, the auxiliary liquid discharge channel 12 is located, for example, between the temperature control channel 11 and the outer wall of the chamber body. The auxiliary liquid discharge channel 12 comprises a plurality of communication segments 121 and a plurality of closed segments 122 arranged alternately. The plurality of communication segments 121 are in one-to-one correspondence with the plurality of first pipe segments 111 and the second pipe segment 112. The plurality of closed segments 122 are located between two adjacent first pipe segments 111 and between the second pipe segment 112 and the first pipe segment 111 adjacent thereto. When the switch assembly 2 is in the first state, the switch assembly 2 is used to block each closed segment 122 to block the liquid in the corresponding first pipe segment 111 from flowing into the closed segment 122, so that the heat exchange liquid can normally flow in the temperature control channel 11 to achieve temperature control of the chamber body. When the switch assembly 2 is in the second state, the switch assembly 2 connects all the communication segments 121 with the corresponding closed segments 122 to make the auxiliary liquid discharge channel communicate, so that the plurality of first pipe segments 111 and the second pipe segment 112 are all in communication with the auxiliary liquid discharge channel 12, so that the liquid accumulated in the plurality of first pipe segments 111 flows downward along the auxiliary liquid discharge channel 12 into the second pipe segment 112.

[0067] Figure 5

[0068] ​​In some embodiments, as shown in Figure 7 The switch assembly 2 includes a switch rod 21. The switch rod 21 is disposed inside the auxiliary liquid discharge channel 12 and extends along the auxiliary liquid discharge channel 12. The switch rod 21 has at least one protrusion 211 and at least one recess 212, and the protrusions 211 and the recesses 212 are arranged alternately along the length direction of the switch rod 21.

[0069] As shown in Figure 5 and Figure 6 The protrusions 211 are arranged one-to-one with the communication sections 121, and the length of the protrusions 211 is less than the length of the corresponding communication sections 121. The outer circumferential surface of the protrusions 211 can be sealingly matched with the inner wall of the closed sections 122. Specifically, the cross section of the protrusions 211 is the same as the cross section shape of the closed sections 122. The outer circumferential surface of the recesses 212 is arranged spaced apart from the inner wall of the closed sections 122, so that the recesses 212 can form a gap between the inner wall of the closed sections 122 when the recesses 212 are moved into the closed sections 122.

[0070] When the switch assembly 2 is in the first state, each protrusion 211 is sealingly matched with the inner wall of the corresponding closed section 122 to block the corresponding closed section 122, thereby blocking the liquid in the corresponding first pipe section 111 from flowing into the communication section 121, and ensuring that the heat exchange liquid cannot flow into the second pipe section 112 through the auxiliary liquid discharge channel 12. When the switch assembly 2 is in the second state, the protrusions 211 are located in the corresponding communication sections 121, and the recesses 212 are located in the closed sections 122. Since the length of the protrusions 211 is less than the length of the communication sections 121, as shown in Figure 6 the upper and lower ends of the communication sections 121 are not blocked, and the communication sections 121 can be communicated with the gap between the recesses 212 and the inner wall of the closed sections 122 to sequentially communicate all adjacent communication sections 121 through the gap, thereby communicating all the first pipe sections 111 with the second pipe section 112, so that the liquid accumulated in all the first pipe sections 111 can flow out through the corresponding communication sections 121 and flow into the second pipe section 112 through the gap between the recesses 212 and the inner wall of the auxiliary liquid discharge channel 12.

[0071] It should be noted that although Figure 3 only one auxiliary liquid discharge channel 12 is shown, the number of auxiliary liquid discharge channels 12 in the embodiment is not limited to one, and correspondingly, the number of switch rods 21 is also not limited to one. For example, there are multiple auxiliary liquid discharge channels 12, and each auxiliary liquid discharge channel 12 is communicated with a first pipe section 111. Alternatively, part of the auxiliary liquid discharge channels 12 are communicated with part of the first pipe sections 111, and the other part of the auxiliary liquid discharge channels 12 are communicated with the remaining first pipe sections 111.

[0072] In some embodiments, as shown in Figure 2 and Figure 4As shown, the first pipe segments 111 extend along a first direction; the temperature control channel further has a plurality of third pipe segments 113 extending along a second direction and a plurality of fourth pipe segments 114 extending along the first direction. The plurality of third pipe segments 113 and the plurality of fourth pipe segments 114 can be connected with the plurality of first pipe segments 111 and the second pipe segment 112 to form a temperature control channel. In some specific embodiments, the first direction is a horizontal direction; the second direction is a vertical direction; accordingly, the auxiliary liquid drainage channel 12 extends along the vertical direction, so that the liquid can flow to the second pipe segment 112 at the lowermost end under the action of gravity.

[0073] The plurality of first pipe segments 111 are spaced apart along the second direction, and each first pipe segment 111 is in communication with two third pipe segments 113 higher than both ends thereof. The plurality of fourth pipe segments 114 are spaced apart along the second direction, and each fourth pipe segment 114 is in communication with two third pipe segments 113 lower than both ends thereof, or is in communication with one third pipe segment 113 higher than one end thereof and one fourth pipe segment 114 lower than one end thereof, respectively. In this way, the plurality of first pipe segments 111, the second pipe segment 112, the plurality of third pipe segments 113, and the plurality of fourth pipe segments 114 can be connected to form a spiral temperature control channel 11 as shown. Figure 2 and Figure 4

[0074] In some embodiments, the first temperature control body 1 further has a mounting through hole 13 on the bottom surface thereof, which is in communication with the auxiliary liquid drainage channel 12. The mounting through hole 13 is coaxially arranged with the auxiliary liquid drainage channel 12, and the hole wall of the mounting through hole 13 is in sealing cooperation with the outer periphery of the switch rod 21, so that the switch rod 21 can extend outside the first temperature control body 1 through the mounting through hole 13. The semiconductor process chamber further includes a driving assembly 6 connected with one end of the switch rod 21 extending outside the first temperature control body 1, for driving the switch rod 21 to slide inside the auxiliary liquid drainage channel 12, so as to control the switch rod 21 to switch between the first state and the second state.

[0075] In some specific embodiments, the above-mentioned driving assembly 6 is, for example, an electric cylinder, which includes a driving rod and a motor. The driving rod is connected with the bottom end of the switch rod 21, and the motor is used to provide a linear lifting driving force for the driving rod, so as to drive the driving rod to lift, and in turn drive the switch rod 21 to lift inside the auxiliary liquid drainage channel 12, so as to drive the switch rod 21 to switch between the first state and the second state. Moreover, as shown, Figure 2 the motor is installed below the first temperature control body 1, for example, through a fixed support.

[0076] In other embodiments, the switch rod 21 can also be manually moved up and down in the auxiliary liquid drainage channel by an operator, so as to control the switch rod 21 to switch between the first state and the second state.

[0077] In some embodiments, as shown, Figure 9 ​As shown, the temperature control channel 11 has a first port 11A and a second port 11B, both of which are in communication with an external liquid source to form a circulation passage between the temperature control channel and the external liquid source, so that the heat exchange liquid is circulated to control the temperature of the chamber body. The first port 11A is arranged at the end of the second pipe segment 112, i.e. the first port 11A is located at the bottom side of the temperature control channel 11. Moreover, the second port 11B can be arranged in the topmost pipe segment, i.e. the second port 11B is located at the top side of the temperature control channel 11; so that Figure 2 For example, the second port 11B is arranged at the top end of the third pipe segment 113.

[0078] The semiconductor process chamber further comprises a control assembly 4. The control assembly 4 is configured to control the first port 11A to introduce the heat exchange liquid into the temperature control channel during the temperature control stage, and control the second port 11B to discharge the heat exchange liquid during the temperature control stage; the control assembly 4 is further configured to control the first port 11A to stop introducing the heat exchange liquid during the first liquid discharge stage, and control the second port 11B to discharge the heat exchange liquid during the first liquid discharge stage, and control the driving assembly 6 to drive the switch rod 21 to slide to the first state, so as to ensure that each pipe segment of the temperature control channel 11 is normally communicated, so that most of the heat exchange liquid in the temperature control channel 11 is discharged; the control assembly is further configured to control the first port 11A to stop introducing the heat exchange liquid during the second liquid discharge stage, and control the driving assembly 6 to drive the switch rod 21 to slide to the second state during the second liquid discharge stage, so that the accumulated liquid in the plurality of first pipe segments 111 flows into the second pipe segment 112 through the auxiliary liquid discharge channel 12.

[0079] In some embodiments, the first port 11A of the temperature control channel 11 is connected with the external liquid source 7 and the external gas source 8 through a first three-way valve 13, and the second port 11B is connected with the external liquid source 7 and the external gas source 8 through a second three-way valve 14. The control assembly 4 is further configured to control the first three-way valve 13 to connect the first port 11A with the external gas source 8 during the first liquid discharge stage, and control the second three-way valve 14 to connect the second port 11B with the external liquid source 7, so that the gas flows into the temperature control channel 11 from the first port 11A, thereby pushing the liquid in the temperature control channel 11 to be discharged from the second port 11B. The control assembly 4 is further configured to control the second three-way valve 14 to connect the second port 11B with the external gas source 8 during the second liquid discharge stage, so as to push the liquid in the second pipe segment 112 to be discharged by using the gas, thereby discharging the accumulated liquid in the temperature control channel 11.

[0080] Alternatively, as a simplified liquid discharge mode, a through hole communicating with the second pipe segment 112 can be formed on the bottom surface of the first temperature control main body 1 as the liquid discharge port of the second pipe segment 112, and a sealing plug can be installed in the through hole to control the opening and closing of the liquid discharge port of the second pipe segment 112 by pulling and inserting the sealing plug, so that the accumulated liquid in the temperature control channel 11 can be manually discharged. However, it should be noted that if the heat exchange liquid is a liquid with volatility or toxicity such as perfluoropolyether, the above-mentioned simplified liquid discharge mode cannot be used, because the temperature control channel 11 cannot be isolated from the external environment during the process of pulling and inserting the sealing plug, which is easy to cause the escape of volatile gas.

[0081] Further, in some embodiments, the semiconductor process chamber further comprises a detection assembly. The detection assembly comprises two flow detectors 5 connected with the first port 11A and the second port 11B respectively; the two flow detectors 5 are respectively used to detect the liquid flow at the first port 11A and the second port 11B, and send the detection results to the control assembly 4.

[0082] The control assembly 4 is used to continuously determine whether the liquid flow at the second port 11B is less than or equal to the first preset flow value, i.e. whether the real-time liquid discharge flow is less than or equal to the first preset flow value, during the first liquid discharge stage; if yes, it is determined that the first liquid discharge stage is completed; if no, the liquid discharge continues. The control assembly 4 is also used to continuously determine whether the liquid flow at the first port 11A is less than or equal to the second preset flow value, i.e. whether the real-time liquid discharge flow is less than or equal to the second preset flow value, during the second liquid discharge stage; if yes, it is determined that the second liquid discharge stage is completed; if no, the liquid discharge continues.

[0083] Further, in some embodiments, the detection assembly comprises two humidity detectors (not shown in the figure) respectively arranged at the first port 11A and the second port 11B of the temperature control channel 11. The two humidity detectors are respectively used to detect the humidity at the first port 11A and the humidity at the second port 11B of the temperature control channel 11, and send the detection results to the control assembly 4.

[0084] The control assembly 4 is also used to control the first three-way valve 13 to communicate the temperature control channel 11 with the external gas source 8 after the completion of the second liquid discharge stage, so as to dry the temperature control channel 11 by conveying gas inside the temperature control channel 11, thereby further removing the liquid remaining in the temperature control channel 11. The control assembly 4 is also used to calculate the humidity difference between the humidity at the first port 11A and the humidity at the second port 11B, and continuously determine whether the humidity difference is less than or equal to a preset humidity difference value; if yes, it indicates that the liquid remaining in the temperature control channel 11 has reached a preset value, and therefore the second three-way valve 14 is controlled to disconnect the second port 11B from the external gas source 8, so as to disconnect the temperature control channel 11 from the external gas source 8.

[0085] In some embodiments, the semiconductor process chamber further comprises a heating assembly connected with the external gas source 8, for heating the gas outputted by the external gas source 8 to improve the drying effect of the gas on the liquid inside the temperature control channel 11. The control assembly 4 further controls the heating assembly to be turned on when the temperature control channel 11 is connected with the external gas source 8, and to be turned off when the temperature control channel 11 is disconnected with the external gas source 8.

[0086] In some embodiments, as shown in Figure 2 , the number of the first temperature control bodies 1 is two, and the two first temperature control bodies 1 are respectively located on opposite sides of the chamber body. The temperature control assembly further comprises a second temperature control body 3, which is arranged on the outer wall of the chamber body and adjacent to the two first temperature control bodies 1, and the second temperature control body 3 has an auxiliary temperature control channel 31 therein.

[0087] As shown in Figure 7 , the auxiliary temperature control channel 31 comprises a fifth pipe segment 311, a sixth pipe segment 312 and a seventh pipe segment 313. The fifth pipe segment 311 and the sixth pipe segment 312 are respectively connected with the second ports 11B of the two temperature control channels 11 at one end, and are both connected with one end of the seventh pipe segment 313 at the other end, i.e. the fifth pipe segment 311, the sixth pipe segment 312 and the seventh pipe segment 313 can constitute a pipe line in the shape of "Y" in general. The seventh pipe segment 313 is connected with the external liquid source 7, so that the liquid in the fifth pipe segment 311 and the sixth pipe segment 312 is merged into one way.

[0088] Further, in some embodiments, the auxiliary temperature control channel 31 further comprises an eighth pipe segment 314 and a ninth pipe segment 315. As shown in Figure 8 , one end of the eighth pipe segment 314 and the ninth pipe segment 315 is connected with the external liquid source 7, and the other end is respectively connected with the first ports 11A of the temperature control channels 11 in the two first temperature control bodies 1, so as to deliver the heat exchange liquid to the two temperature control channels 11.

[0089] In some specific embodiments, as shown in Figure 2 and Figure 8 , the fifth pipe segment 311 and the sixth pipe segment 312 are located in the upper half of the second temperature control body 3, and the seventh pipe segment 313 is located in the lower half of the second temperature control body 3; the eighth pipe segment 314 and the ninth pipe segment 315 are located at the bottom end of the second temperature control body 3; correspondingly, the positions of the first ports 11A and the second ports 11B of the two first temperature control bodies 1 also correspond to the positions of the fifth pipe segment 311 and the sixth pipe segment 312, the eighth pipe segment 314 and the ninth pipe segment 315.

[0090] In some specific embodiments, as shown in Figure 2 , the first temperature control bodies 1 are arranged on the outer wall of the chamber body, and the second temperature control body 3 is arranged on the inner wall of the chamber body.As shown, the two first temperature control bodies 1 and the second temperature control body 3 are formed integrally and enclose a hollow cuboid, and the hollow part of the hollow cuboid is in a cylindrical shape to cooperate with the outer wall of the cylindrical chamber body. Moreover, the side of the hollow cuboid opposite to the second temperature control body 3 also has a hollow structure, which can be used to observe the process of the chamber body or to communicate the wafer transfer port of the chamber body.

[0091] In some specific embodiments, as shown in Figure 9 As shown, the external liquid source 7 includes a liquid storage tank 71, a bidirectional pump 72, a first liquid delivery pipeline 73 and a second liquid delivery pipeline 74. The liquid storage tank 71 is used to store the heat exchange liquid. One end of the first liquid delivery pipeline 73 communicates with the liquid storage tank 71, and the other end simultaneously communicates with the eighth pipe segment 314 and the ninth pipe segment 315 through a three-way joint, so as to simultaneously communicate with the first ports 11A of the two temperature control channels 11. One end of the second liquid delivery pipeline 74 communicates with the seventh pipe segment 313, and the other end communicates with the liquid storage tank 71, so that the second ports 11B of the two temperature control channels 11 are both communicated with the liquid storage tank 71. In this way, the first liquid delivery pipeline 73, the second liquid delivery pipeline 74, the two temperature control channels 11 and the liquid storage tank 71 can constitute a liquid circulation passage, so as to realize the recycling of the heat exchange liquid.

[0092] The bidirectional pump 72 is arranged in the first liquid delivery pipeline 73 to drive the heat exchange liquid to flow in the liquid circulation passage. Moreover, the controller can be used to control the opening and closing, the pumping direction and the output pressure of the bidirectional pump 72.

[0093] In some specific embodiments, the external gas source 8 includes a compressed air tank and a gas delivery pipeline, wherein the output end of the compressed air tank communicates with one end of the gas delivery pipeline, and the other end of the gas delivery pipeline communicates with the first three-way valve 13 and the second three-way valve 14. Alternatively, the external gas source 8 can also be a factory gas supply pipeline.

[0094] Correspondingly, the heating assembly, for example, includes a heating belt, which is wound around the outer periphery of the gas delivery pipeline or the factory gas supply pipeline, so as to heat the gas delivered to the inside of the temperature control channel 11, thereby improving the drying effect on the temperature control channel 11.

[0095] Based on the semiconductor process chamber described above, the embodiment further provides a liquid draining method, which includes the following steps:

[0096] In the first liquid draining stage, the switch assembly 2 is controlled to be in the first state, and the heat exchange liquid is controlled to drain in the temperature control channel 1 in a preset circulation direction, so as to drain most of the heat exchange liquid.

[0097] In the second draining stage, the switch assembly 2 is controlled to be in the second state; the remaining heat exchange liquid in the temperature control channel 1 is drained in a direction opposite to the preset circulation direction, so that the small amount of heat exchange liquid accumulated is drained in the second pipe section 112.

[0098] Specifically, the preset circulation direction is the flow direction of the heat exchange liquid in the temperature control stage, for example, from the first port 11A to the second port 11B of the temperature control channel 1. Based on this, in some specific embodiments, the step of controlling the heat exchange liquid in the temperature control channel to be normally drained in the circulation direction includes the following steps:

[0099] The first port 11A of the temperature control channel is controlled to be in communication with only the external gas source, and the second port 11B of the temperature control channel is controlled to be in communication with only the external liquid source, so as to push the liquid in the temperature control channel out of the second port 11B by using the gas.

[0100] Further, after the switch assembly 2 is controlled to be in the first state, the liquid accumulated in the plurality of first pipe sections 111 flows downward into the second pipe section 112 through the auxiliary draining pipe 12; therefore, the step of controlling the heat exchange liquid in the temperature control channel to be drained in a direction opposite to the circulation direction includes the following steps:

[0101] The first port 11A is controlled to be in communication with only the external liquid source, and the second port 11B is controlled to be in communication with only the external gas source, so as to push the liquid in the second pipe section 112 out of the second pipe section 112 by using the gas, thereby draining the liquid accumulated in the auxiliary draining pipe 12.

[0102] Further, in some embodiments, the liquid draining method further includes:

[0103] In the first draining stage, the liquid flow at the second port 11B is continuously detected, and it is continuously determined whether the liquid flow at the first port 11A is less than or equal to a first preset flow value; if yes, it is determined that the first draining stage is completed, and the second draining stage is started;

[0104] In the second draining stage, the liquid flow at the first port 11A is continuously detected, and it is continuously determined whether the liquid flow at the second port 11B is less than or equal to a second preset flow value; if yes, it is determined that the second draining stage is completed.

[0105] It is easy to understand that, since the first draining stage is used to drain most of the heat exchange liquid, and the second draining stage is used to drain the remaining liquid which cannot be drained in the first draining stage, the second preset flow value is less than the first preset flow value, and the second preset flow value can be close to 0.

[0106] In some embodiments, after the second draining stage is completed, the liquid draining method further includes a drying stage, which includes:

[0107] The second port 11B is controlled to be communicated with the external gas source to dry the temperature control channel 11 by conveying the gas inside the temperature control channel;

[0108] The humidity at the first port 11A and the second port 11B is continuously detected, and the humidity difference between the first port 11A and the second port 11B is calculated, and it is continuously judged whether the humidity difference is less than or equal to a preset humidity difference value; if yes, the second port 11B is controlled to be disconnected with the external gas source. Specifically, since the gas flows into the temperature control channel 11 from the second port 11B, the humidity at the second port 11B is lower than that at the first port 11A, and as the drying proceeds, the humidity inside the temperature control channel 11 continues to decrease, and thus the humidity difference between the first port 11A and the second port 11B gradually decreases, so the humidity difference between the first port 11A and the second port 11B can represent the drying condition of the temperature control channel 11.

[0109] It should be noted that the above control steps and calculation steps can be executed by the control assembly 4, and the communication objects of the first port 11A and the second port 11B can be switched by sending corresponding control signals to the above-mentioned first three-way valve 13 and the second three-way valve 14. The detection step can be executed by the detection assembly.

[0110] Specifically, based on the semiconductor process chamber as shown in Figure 9 , the embodiment also provides a specific execution process of the above-mentioned liquid drainage method, which comprises:

[0111] S1, temperature control stage:

[0112] S11, send a temperature control instruction to the control assembly 4; specifically, the drainage instruction can be issued by the operator control console;

[0113] S12, the control assembly 4 controls the bidirectional pump 72 to rotate forward to drive the heat exchange liquid in the liquid storage tank 71 to flow into the first port 11A of the temperature control channel 11 and return to the liquid storage tank 71 from the second port 11B, so as to control the temperature of the chamber body by the circulating heat exchange liquid flow;

[0114] S2, first liquid drainage stage:

[0115] S21, send a liquid drainage instruction to the control assembly 4; specifically, the liquid drainage instruction can be issued by the operator control console;

[0116] S22, the control assembly 4 controls the bidirectional pump 72 rotating forward to be closed to stop driving the heat exchange liquid to flow; and controls the electric cylinder to push the switch rod 21 to remain in the first state to ensure that the heat exchange liquid flows normally in the temperature control pipeline 11;

[0117] S23, the control component 4 controls the second three-way valve 14 to communicate the second port 11B with the liquid storage tank 71, and controls the first three-way valve 13 to communicate the first port 11A with the external gas source 8, so as to push the liquid in the temperature control channel 11 to the liquid storage tank 71 by the gas;

[0118] S24, the flow detector 5 detects the liquid outflow rate at the second port 11B, and the control component 4 continuously judges whether the liquid outflow rate at the second port 11B is less than or equal to the first preset flow value; if not, the judgment continues; if yes, it is determined that the first liquid discharge stage is completed;

[0119] S3, second liquid discharge stage

[0120] S31, the control component 4 controls the electric cylinder to push the switch rod 21 to rise until it is switched to the second state, so that the accumulated liquid in the plurality of first pipe sections 111 flows downward into the second pipe section 112 through the auxiliary liquid discharge pipeline 12;

[0121] S32, the control component 4 controls the first three-way valve 13 to communicate the first port 11A with the liquid storage tank 71, and controls the second three-way valve 14 to communicate the second port 11B with the external gas source 8, so as to push the liquid in the second pipe section 112 to flow reversely into the liquid storage tank 71 by the gas;

[0122] S33, the control component 4 controls the bidirectional pump 72 to reversely rotate, so as to accelerate the liquid discharged from the first port 11A to flow into the liquid storage tank 71;

[0123] S34, the flow detector 5 detects the liquid outflow rate at the first port 11A, and the control component 4 continuously judges whether the liquid outflow rate at the first port 11A is less than or equal to the second preset flow value; if not, the judgment continues; if yes, it is determined that the second liquid discharge stage is completed;

[0124] S4, drying stage:

[0125] S41, the control component 4 controls the heating belt to be turned on, so as to heat the gas output by the external gas source 8;

[0126] S42, the control component 4 controls the second three-way valve 14 to communicate the second port 11B with the external gas source 8, so as to dry the temperature control channel 11 by the gas;

[0127] S43, two humidity detectors detect the humidity at the first port 11A and the humidity at the second port 11B respectively, the control component 4 calculates the humidity difference between the humidity at the first port 11A and the humidity at the second port 11B of the temperature control channel 11, and continuously judges whether the humidity difference is less than or equal to the preset humidity difference value; if not, the judgment continues; if yes, it is determined that the dryness inside the temperature control channel 11 reaches the requirement;

[0128] S44, the control component 4 controls the heating belt, the bidirectional pump 72 to be closed, controls the first three-way valve 13 and the second three-way valve 14 to respectively communicate the first port 11A and the second port 11B with the liquid storage tank 71, and controls the electric cylinder to reset, so that the switch rod 21 returns to the first state.

[0129] The semiconductor process chamber and the liquid discharge method provided by the embodiment can utilize the auxiliary liquid discharge channel to discharge the accumulated liquid in the temperature control channel to the second pipe section, and can discharge the accumulated liquid through reverse liquid discharge, thereby avoiding damage to the temperature control channel caused by the accumulated liquid solidifying in a low-temperature environment.

[0130] It can be understood that the above embodiments are only exemplary embodiments adopted for illustrating the principles of the present application, and the present application is not limited thereto. Various modifications and improvements can be made by those of ordinary skill in the art without departing from the spirit and essence of the present application, and these modifications and improvements are also considered to be within the protection scope of the present application.

Claims

1. A semiconductor process chamber, comprising: The utility model relates to a temperature control device for a chamber, comprising: a chamber body; a temperature control assembly comprising a first temperature control body arranged on an outer wall of the chamber body; the first temperature control body has a temperature control channel for the flow of heat exchange liquid, and the temperature control channel has a plurality of first pipe segments and second pipe segments, both ends of the first pipe segments are connected with pipe segments higher than the ends, and the second pipe segments are located at the bottom of the temperature control channel and extend horizontally; the first temperature control body also has an auxiliary liquid discharge channel that communicates with the plurality of first pipe segments and the second pipe segments; a switch assembly arranged in the auxiliary liquid discharge channel; the switch assembly has a first state and a second state; in the first state, the switch assembly is used to block the flow of liquid in the auxiliary liquid discharge channel; in the second state, the switch assembly is used to make the liquid in the plurality of first pipe segments flow into the second pipe segments through the auxiliary liquid discharge channel.

2. The semiconductor process chamber of claim 1, wherein, The auxiliary liquid discharge channel is located on the side of the plurality of first pipe segments and the second pipe segments; the auxiliary liquid discharge channel comprises a plurality of communication segments and a plurality of closed segments arranged alternately; the plurality of communication segments communicate with the plurality of first pipe segments and the second pipe segments one by one; the plurality of closed segments are located between two adjacent first pipe segments and between the second pipe segment and the first pipe segment adjacent to it; When the switch assembly is in the first state, the switch assembly blocks each closed segment; when the switch assembly is in the second state, the switch assembly communicates all the communication segments with the corresponding closed segments to make the auxiliary liquid discharge channel communicate.

3. The semiconductor process chamber of claim 2, wherein, The switch assembly comprises a switch rod; the switch rod is arranged inside the auxiliary liquid discharge channel and extends along the auxiliary liquid discharge channel; The switch rod has at least one convex part and at least one concave part, and the convex part and the concave part are arranged alternately along the length direction of the switch rod; the convex part is arranged one by one with the communication segment, and the length of the convex part is less than the length of the corresponding communication segment; The outer peripheral surface of the convex part can be sealingly matched with the inner wall of the closed segment; the outer peripheral surface of the concave part is spaced apart from the inner wall of the closed segment; When the switch assembly is in the first state, each convex part is sealingly matched with the inner wall of the corresponding closed segment to block the flow of liquid in the corresponding first pipe segment into the communication segment; When the switch assembly is in the second state, the convex part is located in the corresponding communication segment, and the concave part is located in the closed segment, so that the liquid in the first pipe segment flows into the communication segment.

4. The semiconductor process chamber of claim 1, wherein, The first pipe segments extend in a first direction; the temperature control channel also has a plurality of third pipe segments extending in a second direction and a plurality of fourth pipe segments extending in the first direction; The plurality of third pipe segments and the plurality of fourth pipe segments can be connected with the plurality of first pipe segments and the second pipe segments to form a temperature control channel; The plurality of first pipe segments are spaced apart in the second direction, and each first pipe segment communicates with two third pipe segments higher than both ends; A plurality of fourth pipe segments are spaced apart along the second direction, and the fourth pipe segments are in communication with two third pipe segments lower than both ends of the fourth pipe segments, or a third pipe segment higher than one end of the fourth pipe segment and a fourth pipe segment lower than one end of the fourth pipe segment, respectively.

5. The semiconductor process chamber of claim 4, wherein, The first direction is a horizontal direction, and the second direction is a vertical direction. The auxiliary liquid discharge channel extends along the vertical direction.

6. The semiconductor process chamber of claim 3, wherein, The first temperature control body further has a mounting through hole in communication with the auxiliary liquid discharge channel, the mounting through hole is coaxially arranged with the auxiliary liquid discharge channel, and the hole wall of the mounting through hole is in sealing cooperation with the outer periphery of the switch rod; the switch rod extends to the outside of the first temperature control body through the mounting through hole. The semiconductor process chamber further comprises a driving assembly; the driving assembly is connected with the end of the switch rod, and is used for driving the switch rod to slide in the auxiliary liquid discharge channel.

7. The semiconductor process chamber of claim 6, wherein, The temperature control channel has a first port and a second port, both of which are in communication with an external liquid source; the first port is arranged at the end of the second pipe segment; The semiconductor process chamber further comprises a control assembly; wherein the control assembly is used for controlling the first port to pass in the heat exchange liquid in the temperature control stage and stop passing in the heat exchange liquid in the first liquid discharge stage and the second liquid discharge stage, and controlling the second port to discharge the heat exchange liquid in the temperature control stage and the first liquid discharge stage; the control assembly is further used for controlling the driving assembly to drive the switch rod to slide to the first state in the first liquid discharge stage, and controlling the driving assembly to drive the switch rod to slide to the second state in the second liquid discharge stage.

8. The semiconductor process chamber of claim 7, wherein, The first port is connected with the external liquid source and an external gas source through a first three-way valve respectively, and the second port is connected with the external liquid source and the external gas source through a second three-way valve respectively; The control assembly is further used for controlling the first three-way valve to communicate the first port with the external gas source in the first liquid discharge stage, and controlling the second three-way valve to communicate the second port with the external liquid source, so as to push the liquid in the temperature control channel out by using gas; and is further used for controlling the second three-way valve to communicate the second port with the external gas source in the second liquid discharge stage, so as to push the liquid in the second pipe segment out by using gas.

9. The semiconductor process chamber of claim 8, wherein, Further comprising a detection assembly; the detection assembly comprises two flow detectors connected with the first port and the second port respectively; the two flow detectors are respectively used for detecting the liquid flow at the first port and the second port, and sending the detection results to the control assembly; The control assembly is further used for continuously judging whether the liquid flow of the second port is less than or equal to a first preset flow value in the first liquid discharge stage; if yes, it is determined that the first liquid discharge stage is completed; The control assembly is further used for continuously judging whether the liquid flow of the first port is less than or equal to a second preset flow value in the second liquid discharge stage; if yes, it is determined that the second liquid discharge stage is completed.

10. The semiconductor process chamber of claim 9, wherein, The detection assembly further comprises two humidity detectors respectively arranged at the first port and the second port of the temperature control channel; the two humidity detectors are respectively used for detecting the humidity at the first port and the second port and sending the detection results to the control assembly; The control assembly is further used for controlling the second three-way valve to communicate the second port with the external gas source after the second liquid discharging stage is completed, so as to dry the temperature control channel by conveying gas inside the temperature control channel; and calculating the humidity difference between the first port and the second port and continuously judging whether the humidity difference is less than or equal to a preset humidity difference value; If yes, the second three-way valve is controlled to disconnect the second port from the external gas source.

11. The semiconductor process chamber of claim 10, wherein, Further comprising a heating assembly connected with the external gas source and used for heating the gas output by the external gas source; The control assembly is further used for controlling the heating assembly to be turned on when the temperature control channel is communicated with the external gas source, and controlling the heating assembly to be turned off after the temperature control channel is disconnected from the external gas source.

12. The semiconductor process chamber of claim 7, wherein, The number of the first temperature control bodies is two; the two first temperature control bodies are respectively arranged on opposite sides of the chamber body; The temperature control assembly further comprises a second temperature control body arranged on the outer wall of the chamber body and adjacent to the two first temperature control bodies; the second temperature control body has an auxiliary temperature control channel therein; The auxiliary temperature control channel comprises a fifth pipe segment, a sixth pipe segment and a seventh pipe segment; one end of the fifth pipe segment and one end of the sixth pipe segment are respectively communicated with the second ports of the two temperature control channels, and the other end of the fifth pipe segment and the other end of the sixth pipe segment are both communicated with one end of the seventh pipe segment; the other end of the seventh pipe segment is communicated with the external liquid source.

13. A method of draining a fluid, applied to the semiconductor process chamber according to any one of claims 1-12; wherein, Comprise: In the first liquid discharging stage, the switch assembly of the semiconductor process chamber is controlled to be in a first state; The heat exchange liquid is controlled to be discharged in the temperature control channel in a preset circulation direction; In the second liquid discharging stage, the switch assembly is controlled to be in a second state; the remaining heat exchange liquid is controlled to be discharged in the temperature control channel in a direction opposite to the preset circulation direction.

14. The liquid discharge method according to claim 13, wherein Applied to the semiconductor process chamber of any one of claims 8-12; The control of the heat exchange liquid to be normally discharged in the temperature control channel in a circulation direction comprises: controlling the first port of the temperature control channel to be communicated with only the external gas source and controlling the second port of the temperature control channel to be communicated with only the external liquid source, so as to utilize the gas to push the liquid inside the temperature control channel to be discharged through the second port; The control of the heat exchange liquid to be discharged in the temperature control channel in a direction opposite to the circulation direction comprises: controlling the first port to be communicated with only the external liquid source and controlling the second port to be communicated with only the external gas source, so as to utilize the gas to push the liquid inside the second pipe segment to be discharged.

15. The liquid discharge method according to claim 14, wherein After the second liquid discharging stage is completed, a drying stage is further included, which comprises: The second port is controlled to be communicated with the external gas source, so as to dry the temperature control channel by conveying gas inside the temperature control channel; Continuously detecting the humidity at the first port and the second port, and calculating the humidity difference between the first port and the second port, and continuously judging whether the humidity difference is less than or equal to a preset humidity difference value; if yes, controlling the second port to be disconnected with the external air source.

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