Etching mechanism for manufacturing integrated optoelectronic device

Abstract

The invention discloses an etching mechanism for manufacturing an integrated optoelectronic device, and relates to the technical field of optoelectronic devices, the etching mechanism comprises a processing box, a cover plate is arranged at an opening of the processing box, a sealing ring is fixedly connected to the side of the lower surface of the cover plate, and the sealing ring is in extrusion fit with the inner wall of the processing box. An exhaust mechanism penetrates through the upper surface of the cover plate, the cover plate is arranged to seal the opening of the treatment box, so that leakage of toxic gas generated in the etching process of integrated optoelectronic device manufacturing is prevented, the contact strength between the cover plate and the inner wall of the treatment box can be increased by arranging a sealing ring, and the sealing performance of the treatment box is improved. The cover plate is arranged on the upper surface of the treatment box, so that the cover plate is tightly connected to the upper surface of the treatment box, by arranging the exhaust mechanism, waste gas generated by manufacturing and etching of the integrated optoelectronic device in the inner cavity of the treatment box can be purified and exhausted, the effect of protecting operators is achieved, and the effect of preventing the waste gas generated by etching from leaking is achieved.

Description

Technical Field

[0001] The invention relates to the technical field of optoelectronic devices, in particular to an etching mechanism for manufacturing integrated optoelectronic devices. Background Art

[0002] The principle of wet etching is to remove materials by chemical reaction between chemical solution and materials. During the etching process, the wafer is immersed in a specific chemical etching solution, which reacts with the material to be removed. For example, hydrofluoric acid (HF) is commonly used to etch silicon dioxide (SiO 2 ), with phosphoric acid (H 3 PO 4 ) Etching of silicon nitride (Si 3 N 4 ) and so on. The etching rate is affected by factors such as etching solution concentration, temperature and substrate material. To ensure uniform etching, the etching solution may need to be stirred. Dry etching uses reactive gases to react with materials in a plasma or reactive ion etching (RIE) environment, or to remove materials through a physical etching mechanism. Among them, reactive ion etching combines chemical reactions and physical sputtering to achieve highly anisotropic etching and can better control the direction and shape of etching. Physical sputtering etching mainly removes materials by using the kinetic energy of ions to impact the surface of the material. Plasma-enhanced chemical etching uses the reactive part in the plasma-enhanced gas to improve etching efficiency and selectivity.

[0003] When etching an optoelectronic device, a clamp such as tweezers is usually used to immerse the optoelectronic device in a liquid, which may cause the exhaust gas generated by the etching to leak. Summary of the invention

[0004] To achieve the above objectives, the present invention is implemented through the following technical solutions: an etching mechanism for manufacturing integrated optoelectronic devices, comprising a processing box, a cover plate is provided at the opening of the processing box, a sealing ring is fixedly connected to the side of the lower surface of the cover plate, the sealing ring is pressed and adapted with the inner wall of the processing box, and an exhaust mechanism is penetrated through the upper surface of the cover plate. By providing the cover plate, the opening of the processing box can be closed, thereby preventing the leakage of toxic gases generated during the etching process of manufacturing integrated optoelectronic devices. By providing the sealing ring, the contact strength between the cover plate and the inner wall of the processing box can be increased, so that the cover plate is tightly connected to the upper surface of the processing box. By providing the exhaust mechanism, the waste gas generated in the inner cavity of the processing box due to the etching of the integrated optoelectronic device can be purified and discharged, thereby achieving the effect of protecting the operator; A connecting frame is fixedly connected to the inner wall of the processing box, and a lifting mechanism is arranged on the inner wall of the connecting frame. By arranging the lifting mechanism, the integrated optoelectronic device to be etched can be placed, and after the integrated optoelectronic device is placed, it can be moved downward until it contacts with the etching liquid, so as to achieve the effect of etching the integrated optoelectronic device. The lifting mechanism includes a track frame, and a sliding column is slidably connected to the inner cavity of the track frame, and the bottom end of the sliding column is fixedly connected to a sliding rod, and the sliding rod passes through the track frame, and the bottom end of the sliding rod is fixedly connected to an arc plate, and the lower surface of the arc plate is fixedly connected to a placement mechanism. By arranging the track frame, the sliding column can be limited so that the sliding column can drive the arc plate to move up and down. By arranging the placement mechanism, the integrated optoelectronic device to be etched can be placed, and the etching liquid can flow to the outer surface of the integrated optoelectronic device.

[0005] Preferably, the exhaust mechanism includes a connecting pipe, which passes through the cover plate, and the bottom end of the connecting pipe is fixedly connected to a partition rod, and the bottom end of the partition rod is fixedly connected to a circular plate. By arranging a plurality of partition rods, the gas generated by the etching of the integrated optoelectronic device can flow into the inner cavity of the connecting pipe through the gap between the partition rods.

[0006] Preferably, an exhaust fan is fixedly connected to the inner wall of the connecting pipe, an exhaust pipe is fixedly connected to the top of the connecting pipe, an activated carbon block is fixedly connected to the inner wall of the connecting pipe located above the exhaust fan, the number of the activated carbon blocks is several, and the several activated carbon blocks are evenly distributed. By setting the exhaust fan, after the power is connected and the switch is turned on, the gas generated by the etching of the integrated optoelectronic device in the inner cavity of the processing box can be discharged from the processing box and discharged through the exhaust pipe. By setting the activated carbon block, it can come into contact with the gas generated by the etching of the integrated optoelectronic device and simply adsorb impurities in the exhaust gas during the contact process.

[0007] Preferably, the lifting mechanism also includes a hydraulic press, which is fixedly connected to the inner wall of the connecting frame. A moving rod is provided at the output end of the hydraulic press. By providing the hydraulic press, the moving rod can be moved under power supply and control, so that the top plate can move up and down.

[0008] Preferably, the top end of the moving rod is fixedly connected to a first fixed plate, the outer surface of the first fixed plate is fixedly connected to a top plate, the lower surface of the top plate is fixedly connected to the top end of the sliding column, and by arranging the top plate and the sliding column, an effect of up and down movement can be produced under the drive of the moving rod.

[0009] Preferably, the placement mechanism includes a support plate, which is fixedly connected to the lower surface of the arc plate, and a plurality of holes are opened on the outer surface of the support plate. The bottom end of the support plate is fixedly connected to the base plate. By setting the support plate and opening a plurality of holes on the outer surface of the support plate, the liquid required for etching the integrated optoelectronic device can enter the upper surface of the base plate through the holes.

[0010] Preferably, permeable plates are symmetrically installed on the sides of the upper surface of the base plate, and a drainage pipe runs through the axis of the upper surface of the base plate. By arranging the permeable plates and the drainage pipe, the liquid required for etching the integrated optoelectronic device can flow to the integrated optoelectronic device on the upper surface of the base plate.

[0011] Preferably, a support rod is fixedly connected to the upper surface of the base plate, and a limiting sleeve is fixedly connected to the end of the support rod. A rotating block is rotatably connected to the inner cavity of the limiting sleeve, and an end of the rotating block away from the limiting sleeve is fixedly connected to a placement plate. A plurality of water leakage holes are provided on the upper surface of the placement plate. By providing the limiting sleeve, the rotating block can be limited, so that the rotating block can drive the placement plate to rotate, so that the integrated optoelectronic device can be well placed under the action of the two placement plates.

[0012] The present invention provides an etching mechanism for manufacturing integrated optoelectronic devices. It has the following beneficial effects: 1. The etching mechanism for manufacturing integrated optoelectronic devices can seal the opening of the processing box by setting a cover plate, thereby preventing the leakage of toxic gases generated during the etching process of manufacturing integrated optoelectronic devices. By setting a sealing ring, the contact strength between the cover plate and the inner wall of the processing box can be increased, so that the cover plate is tightly connected to the upper surface of the processing box. By setting an exhaust mechanism, the exhaust gas generated in the inner cavity of the processing box due to the etching of the integrated optoelectronic device can be purified and discharged, thereby achieving the effect of protecting the operator.

[0013] Second, the etching mechanism for manufacturing the integrated optoelectronic device can place the integrated optoelectronic device to be etched by setting a lifting mechanism, and after the integrated optoelectronic device is placed, it can move downward until it contacts with the etching liquid, so as to achieve the effect of etching the integrated optoelectronic device. By setting a track frame, the sliding column can be limited so that the sliding column can drive the arc plate to move up and down. By setting a placement mechanism, the integrated optoelectronic device to be etched can be placed, and the etching liquid can flow to the outer surface of the integrated optoelectronic device.

[0014] 3. The etching mechanism for manufacturing the integrated optoelectronic device can be equipped with an exhaust fan, so that the gas generated by the etching of the integrated optoelectronic device in the inner cavity of the processing box can be discharged from the processing box and discharged through the exhaust pipe after the power is connected and the switch is turned on. By arranging an activated carbon block, it can contact the gas generated by the etching of the integrated optoelectronic device and simply adsorb impurities in the exhaust gas during the contact process. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 A schematic diagram of the external structure of an etching mechanism for manufacturing an integrated optoelectronic device according to the present invention; Figure 2 A schematic cross-sectional structure diagram of an etching mechanism for manufacturing an integrated optoelectronic device according to the present invention; Figure 3 It is a schematic diagram of the exhaust mechanism structure of the present invention; Figure 4 It is a schematic diagram of the lifting mechanism structure of the present invention; Figure 5 It is a schematic diagram of the partial structure of the lifting mechanism of the present invention; Figure 6 It is a schematic diagram of the placement mechanism structure of the present invention; Figure 7 It is a schematic diagram of the local structure of the placement mechanism of the present invention.

[0016] In the figure: 1. treatment box; 2. cover plate; 3. sealing ring; 4. exhaust mechanism; 5. connecting frame; 6. lifting mechanism; 41. connecting pipe; 42. partition rod; 43. round plate; 44. exhaust fan; 45. exhaust pipe; 46. activated carbon block; 61. hydraulic press; 62. moving rod; 63. first fixed plate; 64. track frame; 65. top plate; 66. sliding column; 67. sliding rod; 68. arc plate; 69. placement mechanism; 691. support plate; 692. bottom plate; 693. permeable plate; 694. drain pipe; 695. support rod; 696. limit sleeve; 697. rotating block; 698. placement plate. DETAILED DESCRIPTION

[0017] The present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. The embodiments of the present invention are provided for the purpose of illustration and description, and are not intended to be exhaustive or to limit the present invention to the disclosed forms. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiments are selected and described in order to better illustrate the principles and practical applications of the present invention, and to enable those of ordinary skill in the art to understand the present invention and thereby design various embodiments with various modifications suitable for specific uses.

[0018] The first embodiment, as Figure 1-Figure 3As shown, the present invention provides a technical solution: an etching mechanism for manufacturing integrated optoelectronic devices, comprising a processing box 1, a cover plate 2 is provided at the opening of the processing box 1, a sealing ring 3 is fixedly connected to the side of the lower surface of the cover plate 2, the sealing ring 3 is pressed and adapted with the inner wall of the processing box 1, and an exhaust mechanism 4 is penetrated through the upper surface of the cover plate 2. By providing the cover plate 2, the opening of the processing box 1 can be closed, thereby preventing the leakage of toxic gases generated during the etching process of manufacturing integrated optoelectronic devices. By providing the sealing ring 3, the contact strength between the cover plate 2 and the inner wall of the processing box 1 can be increased, so that the cover plate 2 is tightly connected to the upper surface of the processing box 1. By providing the exhaust mechanism 4, the exhaust gas generated in the inner cavity of the processing box 1 due to the etching of the integrated optoelectronic device can be purified and discharged, thereby achieving the effect of protecting the operator; A connecting frame 5 is fixedly connected to the inner wall of the processing box 1, and a lifting mechanism 6 is provided on the inner wall of the connecting frame 5. By providing the lifting mechanism 6, the integrated optoelectronic device to be etched can be placed, and after the integrated optoelectronic device is placed, it can be moved downward until it contacts with the etching liquid, so as to achieve the effect of etching the integrated optoelectronic device. The lifting mechanism 6 includes a track frame 64, and a sliding column 66 is slidably connected to the inner cavity of the track frame 64. The bottom end of the sliding column 66 is fixedly connected to a sliding rod 67, and the sliding rod 67 penetrates the track frame 64. The bottom end of the sliding rod 67 is fixedly connected to an arc plate 68, and the lower surface of the arc plate 68 is fixedly connected to a placing mechanism 69. By providing the track frame 64, the sliding column 66 can be limited, so that the sliding column 66 can drive the arc plate 68 to move up and down. By providing the placing mechanism 69, the integrated optoelectronic device to be etched can be placed, and the etching liquid can flow to the outer surface of the integrated optoelectronic device.

[0019] The exhaust mechanism 4 includes a connecting pipe 41, the connecting pipe 41 passes through the cover plate 2, the bottom end of the connecting pipe 41 is fixedly connected to a partition rod 42, the bottom end of the partition rod 42 is fixedly connected to a circular plate 43, by setting a plurality of partition rods 42, the gas generated by the etching of the integrated optoelectronic device can flow into the inner cavity of the connecting pipe 41 through the gap between the partition rods 42, the inner wall of the connecting pipe 41 is fixedly connected to an exhaust fan 44, the top end of the connecting pipe 41 is fixedly connected to an exhaust pipe 45, the inner wall of the connecting pipe 41 is located above the exhaust fan 44 and is fixedly connected to an activated carbon block 46, the number of the activated carbon blocks 46 is several, and the number of the activated carbon blocks 46 is several. 6 is evenly distributed. By setting the exhaust fan 44, after the power is connected and the switch is turned on, the gas generated by the etching of the integrated optoelectronic device in the inner cavity of the processing box 1 can be discharged from the processing box 1 and discharged through the exhaust pipe 45. By setting the activated carbon block 46, it can contact with the gas generated by the etching of the integrated optoelectronic device, and simply adsorb the impurities in the exhaust gas during the contact process. When in use, the operator covers the cover plate 2 at the opening of the processing box 1. During the etching of the integrated optoelectronic device, the operator connects the exhaust fan 44 to the power supply and turns on the switch of the exhaust fan 44, so that the exhaust gas in the inner cavity of the processing box 1 can be discharged from the processing box 1 and discharged from the exhaust pipe 45.

[0020] The second embodiment, as Figure 4-Figure 7As shown, the lifting mechanism 6 also includes a hydraulic press 61, which is fixedly connected to the inner wall of the connecting frame 5. A moving rod 62 is provided at the output end of the hydraulic press 61. By providing the hydraulic press 61, the moving rod 62 can be moved under power supply and control, so that the top plate 65 can produce an effect of moving up and down. The top of the moving rod 62 is fixedly connected to a first fixed plate 63, and the outer surface of the first fixed plate 63 is fixedly connected to the top plate 65. The lower surface of the top plate 65 is fixedly connected to the top of the sliding column 66. By providing the top plate 65 and the sliding column 66, the effect of moving up and down can be produced under the drive of the moving rod 62. The placing mechanism 69 includes a supporting plate 691, which is fixedly connected to the lower surface of the arc plate 68. The outer surface of the supporting plate 691 is provided with a plurality of holes. The bottom end of the supporting plate 691 is fixedly connected to a bottom plate 692. By providing the supporting plate 691 and providing a plurality of holes on the outer surface of the supporting plate 691, the integrated optoelectronic The liquid required for device etching can enter the upper surface of the bottom plate 692 through the holes. The sides of the upper surface of the bottom plate 692 are symmetrically installed with permeable plates 693. The axis of the upper surface of the bottom plate 692 is penetrated by a drainage pipe 694. By setting the permeable plate 693 and the drainage pipe 694, the liquid required for the etching of the integrated optoelectronic device can flow to the integrated optoelectronic device on the upper surface of the bottom plate 692. The upper surface of the bottom plate 692 is fixedly connected with a support rod 695, and the end of the support rod 695 is fixedly connected to the bottom plate 692. A limiting sleeve 696 is fixedly connected, and a rotating block 697 is rotatably connected to the inner cavity of the limiting sleeve 696. The end of the rotating block 697 away from the limiting sleeve 696 is fixedly connected to a placement plate 698. A plurality of water leakage holes are provided on the upper surface of the placement plate 698. By setting the limiting sleeve 696, the rotating block 697 can be limited, so that the rotating block 697 can drive the placement plate 698 to rotate, so that the integrated optoelectronic device can be well placed under the action of the two placement plates 698.

[0021] Working principle: When in use, the operator places the integrated optoelectronic device on the upper surface of the placement plate 698. The placement plate 698 and the rotating block 697 will rotate in the inner cavity of the limiting sleeve 696, so that the integrated optoelectronic device remains balanced. Then the operator pours the required liquid into the inner cavity of the processing box 1, and then controls the moving rod 62 at the end of the hydraulic press 61 to move downward, so that the integrated optoelectronic device descends and contacts with the liquid, and finally completes the etching effect on the integrated optoelectronic device.

[0022] Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field and related fields without creative work should fall within the scope of protection of the present invention. The structures, devices and operating methods not specifically described and explained in the present invention are implemented according to the conventional means in the field unless otherwise specified and limited.

Claims

1. An etching mechanism for manufacturing integrated optoelectronic devices, characterized in that: include: A processing box (1), wherein a cover plate (2) is provided at the opening of the processing box (1), a sealing ring (3) is fixedly connected to the side of the lower surface of the cover plate (2), the sealing ring (3) is pressed and fitted with the inner wall of the processing box (1), and an exhaust mechanism (4) is penetrated through the upper surface of the cover plate (2); A connection frame (5) is fixedly connected to the inner wall of the processing box (1), and a lifting mechanism (6) is arranged on the inner wall of the connection frame (5). The lifting mechanism (6) comprises a track frame (64), and a sliding column (66) is slidably connected to the inner cavity of the track frame (64). The bottom end of the sliding column (66) is fixedly connected to a sliding rod (67), and the sliding rod (67) passes through the track frame (64). The bottom end of the sliding rod (67) is fixedly connected to an arc plate (68), and the lower surface of the arc plate (68) is fixedly connected to a placement mechanism (69).

2. The etching mechanism for manufacturing an integrated optoelectronic device according to claim 1, characterized in that: The exhaust mechanism (4) comprises a connecting pipe (41), the connecting pipe (41) passing through the cover plate (2), the bottom end of the connecting pipe (41) being fixedly connected to a partition rod (42), and the bottom end of the partition rod (42) being fixedly connected to a circular plate (43).

3. The etching mechanism for manufacturing an integrated optoelectronic device according to claim 2, characterized in that: An exhaust fan (44) is fixedly connected to the inner wall of the connecting pipe (41), an exhaust pipe (45) is fixedly connected to the top of the connecting pipe (41), and an activated carbon block (46) is fixedly connected to the inner wall of the connecting pipe (41) above the exhaust fan (44), wherein the number of the activated carbon blocks (46) is several and the several activated carbon blocks (46) are evenly distributed.

4. The etching mechanism for manufacturing an integrated optoelectronic device according to claim 1, characterized in that: The lifting mechanism (6) further comprises a hydraulic press (61), wherein the hydraulic press (61) is fixedly connected to the inner wall of the connection frame (5), and a moving rod (62) is provided at the output end of the hydraulic press (61).

5. The etching mechanism for manufacturing an integrated optoelectronic device according to claim 4, characterized in that: The top end of the moving rod (62) is fixedly connected to a first fixing plate (63), the outer surface of the first fixing plate (63) is fixedly connected to a top plate (65), and the lower surface of the top plate (65) is fixedly connected to the top end of a sliding column (66).

6. The etching mechanism for manufacturing an integrated optoelectronic device according to claim 1, characterized in that: The placement mechanism (69) comprises a support plate (691), wherein the support plate (691) is fixedly connected to the lower surface of the arc-shaped plate (68), a plurality of holes are provided on the outer surface of the support plate (691), and the bottom end of the support plate (691) is fixedly connected to a bottom plate (692).

7. The etching mechanism for manufacturing an integrated optoelectronic device according to claim 6, characterized in that: Water-permeable plates (693) are symmetrically installed on the sides of the upper surface of the bottom plate (692), and a drainage pipe (694) runs through the axis of the upper surface of the bottom plate (692).

8. The etching mechanism for manufacturing an integrated optoelectronic device according to claim 7, characterized in that: A support rod (695) is fixedly connected to the upper surface of the bottom plate (692); the end of the support rod (695) is fixedly connected to a limiting sleeve (696); a rotating block (697) is rotatably connected to the inner cavity of the limiting sleeve (696); an end of the rotating block (697) away from the limiting sleeve (696) is fixedly connected to a placement plate (698); and a plurality of water leakage holes are provided on the upper surface of the placement plate (698).

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