A simple splitting device and method for separating grains after laser stealth cutting of SiC

Abstract

The present invention relates to the field of semiconductor manufacturing technology, and more specifically to a simple cracking device and method for separating grains after laser hidden cutting of SiC; the device comprises a visual positioning mechanism for observation and micro-magnification provided at the upper end of a machine body, a double-cleaving knife alignment mechanism longitudinally slidingly provided on the machine body, and a single-cleaving knife alignment mechanism provided on the machine body, wherein the double-cleaving knife alignment mechanism separates grains of SiC after laser hidden cutting on the single-cleaving knife alignment mechanism; the beneficial effect of the present invention is to solve the problem that when SiC is usually broken by hand, the force points acting on both sides of the SiC are sometimes at unequal distances from the laser-marked modified area, and the personnel sometimes apply uneven force, resulting in the product not cracking along the laser-marked modified area, thereby causing serious edge chipping or even breakage of the sample, which greatly affects the production yield.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and more particularly to a simple splitting device and method for separating crystal grains after laser stealth cutting of SiC. Background Art

[0002] As a typical third-generation semiconductor material, SiC has the characteristics of wide band gap, high carrier mobility, high thermal conductivity, and large critical breakdown voltage. Therefore, it is widely used in power devices, radio frequency devices, aerospace, intelligent manufacturing, nuclear energy and other fields. However, SiC wafers always need to be cut into different sizes to meet actual use requirements. At present, the main method of cutting SiC wafers in industry is diamond grinding wheel cutting. Cutting SiC samples with diamond grinding wheel can achieve zero taper and smooth cutting section, but SiC is a typical hard and brittle material with a Mohs hardness of up to 9 and a low fracture toughness of 1.4-1.8Mpa.m1 / 2;

[0003] Therefore, there are still some disadvantages when cutting SiC with a diamond grinding wheel, such as low feed speed, diamond tool wear, large edge damage, and a relatively large incision width of 50um; similarly, the patent with publication number CN111438442A discloses a method of processing the SiC surface using a nanosecond ultraviolet laser with a wavelength of 355nm and combining it with a subsequent splitting knife three-point bending for splitting. The SiC surface has a strong absorption characteristic for this laser light source, and its surface is grooved by laser scanning, and the SiC is separated into small grains along the grooves using a sharp splitting knife. Although this method can separate SiC wafers into small grains, the flying processing chips during the laser grooving process will contaminate the sample surface. In addition, the sharp splitting knife may also damage the sample surface during the splitting process;

[0004] Invisible laser cutting is a non-destructive cutting technique that focuses the laser beam into the sample, causing a photochemical reaction under the high temperature of the laser to form a modified layer. This layer also creates microcracks longitudinally, eliminating issues such as thermal damage to the material, wide kerfs, and surface contamination during the cutting process. However, the modified SiC still has strong internal bonding, requiring external force to precisely separate it along the laser scanning path.

[0005] Currently, the main source of external force is manual bending. When people bend SiC with their hands, the force points on both sides of the SiC are sometimes at different distances from the laser-marked modified area. People sometimes apply uneven force, resulting in the product not cracking along the laser-marked modified area, causing serious edge chipping or even breakage of the sample, which greatly affects the production yield. Summary of the Invention

[0006] Therefore, the technical problem to be solved by the present invention is to overcome the existing technology of the splitting device and method for separating the grains after laser implicit cutting of SiC wafers, replace manual splitting, and improve the yield of SiC grain separation.

[0007] To this end, the technical solution adopted is a simple splitting device and method for separating grains after laser hidden cutting of SiC of the present invention, comprising a visual positioning mechanism for observation and microscopic magnification provided at the upper end of the fuselage, a double-wrench alignment mechanism provided for longitudinal sliding on the fuselage, and a single-wrench alignment mechanism provided on the fuselage, and the double-wrench alignment mechanism separates the grains of SiC after laser hidden cutting on the single-wrench alignment mechanism.

[0008] Preferably, the visual positioning mechanism includes a display, a longitudinal displacement guide rail, a movable slider, an elastic assembly, a driving gear, a restraining ring structure and a high-definition lens. The longitudinal displacement guide rail is fixed on the fuselage, a movable slider is longitudinally slidably provided on the longitudinal displacement guide rail, an elastic assembly is provided on the movable slider through a threaded connection, a driving gear for driving the movable slider to move along the longitudinal displacement guide rail is provided on the movable slider, a restraining ring structure is fixed on the movable slider, a high-definition lens is fixed on the restraining ring structure through a base, the upper end of the high-definition lens is electrically connected to the display, and the display is fixed on the movable slider.

[0009] Preferably, the fuselage includes an arm and a base, the arm is fixed on the base, a plurality of supporting bases are fixed to the lower end of the base, and a longitudinal displacement guide rail is fixed to the upper end of the arm.

[0010] Preferably, the double-chopping knife alignment mechanism includes a dovetail groove displacement slide, a sheet metal structure and a double-chopping knife structure. The dovetail groove displacement slide is fixed on the machine arm, and a sheet metal structure is provided on the dovetail groove displacement slide for longitudinal sliding. The sheet metal structure is driven and adjusted by a side gear rod to slide longitudinally on the dovetail groove displacement slide, and the double-chopping knife structure is fixed at the lower end of the sheet metal structure.

[0011] Preferably, the sheet metal structure is provided with a hollow rectangle 1, and the double-cleaving knife structure is provided with a hollow rectangle 2. Both the hollow rectangle 1 and the hollow rectangle 2 are provided at the junction of the sheet metal structure and the double-cleaving knife structure. The lower end of the double-cleaving knife structure is provided with a contact end arc outer contour, and the contact end arc outer contour is arc-shaped.

[0012] Preferably, the single-wedge blade alignment mechanism includes a stage, a support assembly, a single-wedge blade structure, a support frame, a sheet metal structure and an XY-axis cross roller guide, the XY-axis cross roller guide and the support frame are fixed on the base, and an X-axis drive adjustment device and a Y-axis drive adjustment device are provided in the XY-axis cross roller guide; a sheet metal structure is provided at the upper end of the XY-axis cross roller guide, four support assemblies are plugged and fixed on the sheet metal structure, and the upper ends of the four support assemblies are fixed to the stage; a support frame is gap-fitted between the four support assemblies, a single-wedge blade structure is fixed to the middle end of the support frame, a contact end profile is provided at the upper end of the stage, and a high-strength adhesive film is provided at the upper end of the stage, and a hollow rectangular area is provided in the center of the stage and the high-strength adhesive film for plugging through the contact end profile of the single-wedge blade structure, and the contact end profile is arc-shaped.

[0013] Preferably, a SiC sample is provided on the Urea film, and there are laser modification traces of the SiC sample after laser hidden cutting inside the SiC sample, and there are marks on the surface indicating the corresponding traces.

[0014] Preferably, the support assembly includes a linear buffer shaft and a spring seat. The spring seat is plugged and fixed on the sheet metal structure. A linear buffer shaft is plugged into the spring seat. The linear buffer shaft is wrapped by the elastic assembly inside the spring seat. The four linear buffer shafts are all fixed on the loading platform.

[0015] Preferably, an elastic pocket is laid between the described adhesive film and the loading platform, and finger grooves are provided on all four sides of the loading platform. The elastic pocket is clamped between the elastic clamp and the finger grooves of the loading platform. The elastic clamp includes a fixed shaft seat, a splint and a torsion spring. The fixed shaft seat is fixed to the lower end of the loading platform, and a rotating shaft is fixed in the fixed shaft seat. The splint rotates on the rotating shaft through the torsion spring, one end of the torsion spring is fixed to the lower end of the splint, and the other end of the torsion spring is fixed in the fixed shaft seat.

[0016] A simple splitting method for separating grains after laser stealth cutting of SiC, comprising the following steps:

[0017] S1: Place the sample: Place the SiC sample to be invisible-cut by laser on the PU on the stage, and align the laser-modified traces of the SiC sample with the hollow rectangular area of ​​the stage;

[0018] S2: Sample visual imaging: Adjust the drive gear until the monitor shows a clearly focused SiC sample and fix it;

[0019] S3: Adjust the single wedge alignment system: Observe the microscopic image on the monitor and further control the movement of the SiC sample to facilitate the alignment of the single wedge structure with the laser modification traces inside the SiC sample;

[0020] S4: Adjust the double-cleaving knife alignment system: Regulate the downward pressure applied to the SiC sample by the double-cleaving knife structure, and apply an upward supporting force to the laser-modified trace of the SiC sample through the single-cleaving knife structure. When the external force reaches the fracture threshold of the laser-modified trace of the SiC sample, the two sides of the glue bend downward and take over the split SiC grains, completing the grain separation.

[0021] Other features and advantages of the present invention will be described in the following description, and in part will become apparent from the description, or will be understood by practicing the present invention. The purpose and other advantages of the present invention can be achieved and obtained through the structures specifically pointed out in this application document.

[0022] The technical solution of the present invention is further described in detail below through the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings:

[0024] Figure 1 It is a schematic diagram of the overall structure of the present invention in the first direction;

[0025] Figure 2 It is a structural schematic diagram of the visual positioning mechanism of the present invention;

[0026] Figure 3 It is a structural schematic diagram of the fuselage of the present invention;

[0027] Figure 4 It is a structural schematic diagram of the double-wrecking knife alignment mechanism of the present invention;

[0028] Figure 5 It is a structural schematic diagram of the double-wrecking knife structure of the present invention;

[0029] Figure 6 It is a structural schematic diagram of the single-wrecking knife alignment mechanism of the present invention;

[0030] Figure 7 is a schematic structural diagram of the support assembly of the present invention;

[0031] Figure 8 It is a structural schematic diagram of the object stage of the present invention;

[0032] Figure 9 It is a structural schematic diagram of a single cleaver structure of the present invention;

[0033] Figure 10 It is a structural schematic diagram of the elastic pocket of the present invention;

[0034] Figure 11It is a schematic structural diagram of the elastic clip of the present invention.

[0035] In the figure: visual positioning mechanism 1; display 11; longitudinal displacement guide rail 12; movable slider 13; tensioning assembly 14; driving gear 15; restraining ring structure 16; high-definition lens 17;

[0036] Body 2; Arm 21; Base 22;

[0037] Double-wedge alignment mechanism 3; dovetail groove displacement slide 31; sheet metal structure 32; double-wedge structure 33; hollow rectangle 1 321; hollow rectangle 2 331; contact end arc outer contour 332;

[0038] Single-wedge alignment mechanism 4; SiC sample 41; SiC internal laser modification traces 411; U-type adhesive film 42; stage 43; support assembly 44; linear buffer shaft 441; spring seat 442; single-wedge structure 45; contact end profile 451; support frame 46; sheet metal structure 47; XY-axis cross roller guide 48; hollow rectangular area 49.

[0039] Elastic pocket 5; elastic clip 6; fixed shaft seat 61; clamping plate 62; torsion spring 63. DETAILED DESCRIPTION

[0040] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0041] In the description of this application, it should be understood that the terms "middle", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they cannot be understood as limitations on this application. The terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of this application, "multiple" means two or more, unless otherwise clearly and specifically defined.

[0042] In addition, unless otherwise expressly specified or limited, the terms "mounted," "connected," "connect," "fixed," etc. should be understood broadly. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediary; or internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in this application based on specific circumstances.

[0043] In this application, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Moreover, a first feature being "above," "above," and "above" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature may include the first feature being directly below or obliquely below the second feature, or may simply mean that the first feature is lower in level than the second feature. Specific implementation method one:

[0045] like Figure 1 — Figure 11 As shown, a simple splitting device and method for separating grains after laser hidden cutting of SiC includes a visual positioning mechanism 1 for observation and micro-magnification provided at the upper end of a body 2, a double-wedge alignment mechanism 3 is longitudinally slidably provided on the body 2, and a single-wedge alignment mechanism 4 is provided on the body 2. The double-wedge alignment mechanism 3 separates the grains of SiC after laser hidden cutting on the single-wedge alignment mechanism 4.

[0046] The working principle and beneficial effects of this embodiment are as follows: by placing the SiC sample 41 that has been invisible-laser cut on the polyurethane foam 42 of the single-cleaving knife alignment mechanism 4, adjusting and controlling the visual positioning mechanism 1 to facilitate observation and alignment of the laser-modified traces 411 inside the SiC sample on the SiC sample 41, and adjusting the single-cleaving knife alignment mechanism 4 to further adjust the lateral and longitudinal positions of the SiC sample 41; fixing the high-definition camera 17 of the visual positioning mechanism 1 for real-time observation, adjusting the double-cleaving knife alignment mechanism 3 to slowly move downward to further control the double-cleaving knife structure 33 of the double-cleaving knife alignment mechanism 3 Move downward until the double cleaver structure 33 contacts the surface of the left and right sides of the laser modified trace 411 of the SiC sample. The double cleaver structure 33 applies downward pressure to the SiC sample 41. The stage 43 on the single cleaver alignment mechanism 4 slowly moves downward under the buffering effect. The single cleaver structure 45 on the single cleaver alignment mechanism 4 applies an upward supporting force at the SiC laser modified trace 411. When the mechanical external force applied by the cleaver reaches the fracture threshold of 10-20N at the SiC laser scribe line 441, the two sides of the glue 42 bend downward and take over the cleaved SiC grains, completing the grain separation. Specific implementation method two:

[0048] like Figure 1 — Figure 11 As shown, a simple splitting device and method for separating grains after laser stealth cutting of SiC, the visual positioning mechanism 1 includes a display 11, a longitudinal displacement guide rail 12, a movable slider 13, an elastic component 14, a driving gear 15, a restraining ring structure 16 and a high-definition lens 17, the longitudinal displacement guide rail 12 is fixed on the fuselage 2, a movable slider 13 is longitudinally slidably provided on the longitudinal displacement guide rail 12, the movable slider 13 is provided with an elastic component 14 through a threaded connection, the movable slider 13 is provided with a driving gear 15 for driving the movable slider 13 to move along the longitudinal displacement guide rail 12, a restraining ring structure 16 is fixed on the movable slider 13, a high-definition lens 17 is fixed on the restraining ring structure 16 through a base, the upper end of the high-definition lens 17 is electrically connected to the display 11, and the display 11 is fixed on the movable slider 13.

[0049] The working principle and beneficial effects of this embodiment are as follows: after the SiC sample 41 that has undergone invisible laser cutting is placed on the urethane foam 42 of the single-cleaver alignment mechanism 4, the driving gear 15 of the movable slider 13 is rotated on the longitudinal displacement guide rail 12, and then the longitudinal height position of the movable slider 13 on the longitudinal displacement guide rail 12 is adjusted through meshing transmission, and then the restraining ring structure 16 and the high-definition lens 17 are locked and fixed by rotating the tensioning component 14, and then the height of the high-definition lens 17 is used to adjust the display 11 in real time for observation of splitting control. Specific implementation method three:

[0051] like Figure 1 — Figure 11 As shown, a simple splitting device and method for separating grains after laser stealth cutting of SiC is shown. The body 2 includes an arm 21 and a base 22. The arm 21 is fixed on the base 22. A plurality of supporting bases are fixed at the lower end of the base 22. A longitudinal displacement guide rail 12 is fixed at the upper end of the arm 21.

[0052] The working principle and beneficial effects of this embodiment are as follows: a plurality of support bases are fixed at the lower end of the base 22 to facilitate the balanced observation support device for splitting, and the setting of the arm 21 facilitates the support and adjustment of the double-cleaver alignment mechanism 3 and the visual positioning mechanism 1. Specific implementation method four:

[0054] like Figure 1 — Figure 11 As shown, a simple splitting device and method for separating grains after laser stealth cutting of SiC is shown. The double-wrecking knife alignment mechanism 3 includes a dovetail groove displacement slide 31, a sheet metal structure 32 and a double-wrecking knife structure 33. The dovetail groove displacement slide 31 is fixed on the machine arm 21. A sheet metal structure 32 is longitudinally slidably provided on the dovetail groove displacement slide 31. The sheet metal structure 32 is driven and adjusted to slide longitudinally on the dovetail groove displacement slide 31 by a side gear rod. The double-wrecking knife structure 33 is fixed to the lower end of the sheet metal structure 32.

[0055] The working principle and beneficial effects of this embodiment are as follows: the sheet metal structure 32 and the double-wedge structure 33 are supported by fixing the dovetail groove displacement slide 31 on the machine arm 21, and the gear rod on the rotating side of the sheet metal structure 32 drives the adjustment, and then the gear rack engages and slides longitudinally on the dovetail groove displacement slide 31, thereby realizing the adjustment of the longitudinal sliding of the sheet metal structure 32 and the double-wedge structure 33, and then realizing the extrusion and splitting of the laser-stealth-cut SiC sample 41 placed on the high-strength glue 42 of the single-wedge positioning mechanism 4. Specific implementation method five:

[0057] like Figure 1 — Figure 11 As shown, a simple splitting device and method for separating grains after laser stealth cutting of SiC is provided. A hollow rectangle 1 321 is provided on the sheet metal structure 32, and a hollow rectangle 2 331 is provided on the double cleaver structure 33. The hollow rectangle 1 321 and the hollow rectangle 2 331 are both provided at the junction of the sheet metal structure 32 and the double cleaver structure 33. The lower end of the double cleaver structure 33 is provided with a contact end arc outer contour 332, and the contact end arc outer contour 332 is arc-shaped.

[0058] The working principle and beneficial effects of this embodiment are as follows: hollow rectangle 1 321 and hollow rectangle 2 331 are present at the junction of the double cleaving knife structure 33 and the sheet metal structure 32 to ensure that the camera 17 can successfully photograph the sample surface through hollow rectangle 1 321 and hollow rectangle 2 331. In addition, in the subsequent splitting process, the double cleaving knife structure 33 will make the contact end arc outer contour 332 that contacts the upper surface of the SiC sample 41 into an arc shape to avoid damage to the SiC sample surface when the tip of the double cleaving knife is pressed down due to excessive curvature; the corresponding contact end arc outer contour 332 of the lower end of the double cleaving knife structure 33 can be split and assembled, and the distance between the contact end arc outer contours 332 can be symmetrically adjusted through the forward and reverse screw adjustment, thereby realizing the adjustment of the extrusion symmetrical position to adapt to the use of SiC samples 41 of different sizes. Specific implementation method six:

[0060] like Figure 1 — Figure 11 As shown, a simple splitting device and method for separating grains after laser stealth cutting of SiC is shown. The single cleaver alignment mechanism 4 includes a stage 43, a support assembly 44, a single cleaver structure 45, a support frame 46, a sheet metal structure 47 and an XY axis cross roller guide 48. The XY axis cross roller guide 48 and the support frame 46 are both fixed on the base 22. The X-axis drive adjustment device and the Y-axis drive adjustment device are provided in the XY axis cross roller guide 48; the upper end of the XY axis cross roller guide 48 is provided with a sheet metal structure 47, and the sheet metal structure Four support components 44 are plugged and fixed on the component 47, and the upper ends of the four support components 44 are fixed with a worktable 43; a support frame 46 is gap-fitted between the four support components 44, and a single cleaver structure 45 is fixed to the middle end of the support frame 46, and the upper end of the single cleaver structure 45 is provided with a contact end profile 451, and the upper end of the worktable 43 is provided with a high-strength adhesive film 42. A hollow rectangular area 49 is provided in the center of the worktable 43 and the high-strength adhesive film 42 for plugging through the contact end profile 451 of the single cleaver structure 45, and the contact end profile 451 is in the shape of an arc.

[0061] The working principle and beneficial effects of this embodiment are as follows: the movement of the stage 43 is controlled by an XY-axis cross roller guide 48 fixed to the base 22, a sheet metal structure 47 is provided on the XY-axis cross roller guide 48 and is used to support the stage 43, and an X-axis drive adjustment device and a Y-axis drive adjustment device are provided in the XY-axis cross roller guide 48, thereby facilitating the adjustment of the XY axes on the plane, and then adjusting the XY axes of the stage 43, thereby achieving adjustment of the alignment position of the SiC sample 41 on the stage 43;

[0062] The four support components 44 embedded in the sheet metal structure 47 and supporting the stage 43 include a linear buffer shaft 441 and a spring seat 442. The spring seat 442 is plugged and fixed on the sheet metal structure 47. A linear buffer shaft 441 is plugged into the spring seat 442. The linear buffer shaft 441 is wrapped by an elastic component inside the spring seat 442. The four linear buffer shafts 441 are all fixed on the stage 43. The SiC sample 41 is pressed under the double wedge structure to cause the stage 43 to It acts as a buffer when the stage moves downward; there is a hollow rectangular area 49 in the center of the stage 43 and the adhesive film 42 structure to ensure that the single cleaver structure 45 below the stage can successfully contact the lower surface of the SiC sample 41 through the hollow area to provide an upward support force to the sample; in addition, in the subsequent splitting process, the contact end profile 451 of the single cleaver structure 45 in contact with the lower surface of the SiC sample 41 is in an arc shape to avoid damage to the surface of the SiC sample 41 when the tip with excessive curvature presses down. Specific implementation method seven:

[0064] like Figure 1 — Figure 11 As shown, a simple splitting device and method for separating grains after laser implicit cutting of SiC is provided. A SiC sample 41 is provided on the described adhesive film 42, and the surface of the SiC sample 41 has internal laser modification marks 411 of the SiC after laser implicit cutting.

[0065] The working principle and beneficial effects of this embodiment are as follows: by placing the SiC sample 41 on the glue film 42 to facilitate extrusion and collection, the two sides of the glue 42 are bent downward to receive the split SiC grains; the SiC sample 41 that has been laser cut is marked with the laser modification marks 411 inside the SiC, thereby facilitating the force application at the corresponding position for splitting. Specific implementation method eight:

[0067] like Figure 1 — Figure 11 As shown, a simple splitting device and method for separating grains after laser stealth cutting of SiC is shown. The support component 44 includes a linear buffer shaft 441 and a spring seat 442. The spring seat 442 is inserted and fixed on the sheet metal structure 47. A linear buffer shaft 441 is inserted into the spring seat 442. The linear buffer shaft 441 is wrapped by an elastic component inside the spring seat 442. The four linear buffer shafts 441 are all fixed on the worktable 43.

[0068] The working principle and beneficial effects of this embodiment are as follows: by arranging a linear buffer shaft 441 and a spring seat 442 in the support assembly 44, the linear buffer shaft 441 in the spring seat 442 is provided with an upward buffering force during the downward process, so that the loading platform 43 is plugged and fixed on the sheet metal structure 47, and a linear buffer shaft 441 is inserted in the spring seat 442. The linear buffer shaft 441 is wrapped by an elastic component inside the spring seat 442. The four linear buffer shafts 441 are all fixed on the loading platform 43, thereby realizing an upward buffering force on the loading platform 43 during the downward process, which is used to reset and buffer the downward force while facilitating the extension of the single chopping knife structure 45 to the upward position for splitting. Specific implementation method nine:

[0070] like Figure 1 — Figure 11 As shown, a simple splitting device and method for separating grains after laser stealth cutting of SiC, an elastic pocket 5 is laid between the described adhesive film 42 and the stage 43, finger grooves are provided on all sides of the stage 43, and the elastic pocket 5 is clamped between the elastic clamp 6 and the finger grooves of the stage 43. The elastic clamp 6 includes a fixed shaft seat 61, a clamping plate 62 and a torsion spring 63. The fixed shaft seat 61 is fixed to the lower end of the stage 43, and a rotating shaft is fixed in the fixed shaft seat 61. The clamping plate 62 rotates on the rotating shaft through the torsion spring 63, and one end of the torsion spring 63 is fixed to the lower end of the clamping plate 62, and the other end of the torsion spring 63 is fixed in the fixed shaft seat 61.

[0071] The working principle and beneficial effects of this embodiment are as follows: when the grains of the SiC sample 41 to be split are too small to be conveniently collected and recycled, an elastic pocket 5 is laid between the adhesive film 42 and the stage 43. The sealing and elastic setting of the elastic pocket 5 facilitates the collection of grains that are too small. At the same time, by using the elastic clamps 6 arranged evenly and symmetrically, the lower end of the clamping plate 62 is squeezed on the finger groove, the upper end of the clamping plate 62 is opened, and the elastic pocket 5 is clamped between the open clamping plate 62 and the finger groove of the stage 43. The torsion spring 63 provided in the fixed shaft seat 61 has a clamping force, thereby achieving the effect of clamping and fixing the elastic pocket 5. In the process of splitting the grains, the elastic pocket 5 in the center cooperates with the splitting process through its elastic properties. After the splitting is completed, the open clamping plate 62 is loosened, thereby loosening the elastic pockets 5 around it, and the split grains and the adhesive film 42 are collected, preventing the leakage or loss of grains that are too small. Specific implementation method ten:

[0073] like Figure 1 — Figure 11 As shown, a simple cracking method for separating grains after laser invisible cutting of SiC:

[0074] S1: Place the sample: Place the SiC sample 41 to be invisible laser cut on the polyurethane foam 42 on the stage, and align the laser cutting track with the rectangular hollow area of ​​the stage to prevent the subsequent single cleaver structure from penetrating through the hollow area to contact the laser modified trace 411 inside the SiC.

[0075] S2: Sample visual imaging: Regulate the driving gear 15 to control the movable slide 13 to move up and down along the longitudinal displacement guide rail 12. The HD camera 17 moves up and down along the movable slide 13 until the display 11 shows a clearly focused SiC sample. Tighten the tensioning assembly 14 to fix the HD camera 17.

[0076] S3: Adjust the single cleaver alignment system: Observe the microscopic image on the display 11 and further control the movement of the SiC sample 41 on the stage by controlling the XY-axis cross roller guide 48, so that the subsequent single cleaver structure 45 can pass through the hollow rectangular area and align with the laser modification trace 411 inside the SiC sample;

[0077] S4: Adjust the double-cleaving knife positioning system: regulate the dovetail slide 31 to move slowly downward and further control the double-cleaving knife structure 33 to move downward until the double-cleaving knife structure 33 contacts the surface of the left and right sides of the laser modified mark 411 of the SiC sample. The double-cleaving knife structure 33 applies downward pressure to the SiC sample 41. The stage 43 moves slowly downward under the buffering action of the linear bearing 441 and the spring 442 surrounding the linear bearing. The single-cleaving knife structure 45 applies an upward supporting force at the SiC laser modified mark 411. When the mechanical external force applied by the cleaving knife reaches the fracture threshold of 10-20N at the SiC laser scribe line 441, the two sides of the glue 42 bend downward and take over the split SiC grains to complete the grain separation.

[0078] The above description is not a limitation of the present invention, and the present invention is not limited to the above examples. Changes, modifications, additions or substitutions made by ordinary technicians in this technical field within the essential scope of the present invention also fall within the scope of protection of the present invention.

Claims

1. A simple splitting device for separating SiC grains after laser stealth cutting, characterized by: The machine body (2) includes a visual positioning mechanism (1) for observation and micro-magnification provided at the upper end thereof, a double-wedge alignment mechanism (3) provided on the machine body (2) for longitudinal sliding, a single-wedge alignment mechanism (4) provided on the machine body (2), and the double-wedge alignment mechanism (3) performs grain separation on the SiC after laser hidden cutting on the single-wedge alignment mechanism (4); The double-chopping knife alignment mechanism (3) comprises a dovetail groove displacement slide (31), a sheet metal structure (32) and a double-chopping knife structure (33). The dovetail groove displacement slide (31) is fixed on the machine arm (21). A sheet metal structure (32) is longitudinally slidably provided on the dovetail groove displacement slide (31). The sheet metal structure (32) is driven and adjusted to longitudinally slide on the dovetail groove displacement slide (31) by a side gear rod. The double-chopping knife structure (33) is fixed at the lower end of the sheet metal structure (32). The single-chopping knife alignment mechanism (4) comprises a loading platform (43), a support assembly (44), a single-chopping knife structure (45), a support frame (46), a sheet metal structure (47) and an XY-axis cross roller guide (48). The XY-axis cross roller guide (48) and the support frame (46) are both fixed on the base (22). An X-axis drive adjustment device and a Y-axis drive adjustment device are provided in the XY-axis cross roller guide (48); a sheet metal structure (47) is provided at the upper end of the XY-axis cross roller guide (48), and four A supporting assembly (44) is provided, and a loading platform (43) is fixed at the upper ends of the four supporting assemblies (44); a supporting frame (46) is interspaced between the four supporting assemblies (44), a single cleaver structure (45) is fixed at the middle end of the supporting frame (46), a contact end profile (451) is provided at the upper end of the single cleaver structure (45), a high-strength adhesive film (42) is provided at the upper end of the loading platform (43), and a hollow rectangular area (49) is provided in the center of the loading platform (43) and the high-strength adhesive film (42) for plugging through the contact end profile (451) of the single cleaver structure (45).

2. A simple splitting device for separating SiC grains after laser stealth cutting according to claim 1, characterized in that: The visual positioning mechanism (1) comprises a display (11), a longitudinal displacement guide rail (12), a movable slider (13), an elastic component (14), a driving gear (15), a restraining ring structure (16) and a high-definition lens (17), wherein the longitudinal displacement guide rail (12) is fixed on the fuselage (2), a movable slider (13) is longitudinally slidably provided on the longitudinal displacement guide rail (12), a tightening component (14) is provided on the movable slider (13) through a threaded connection, a driving gear (15) is provided on the movable slider (13) for driving the movable slider (13) to move on the longitudinal displacement guide rail (12), a restraining ring structure (16) is fixed on the movable slider (13), a high-definition lens (17) is fixed on the restraining ring structure (16) through a base, an upper end of the high-definition lens (17) is electrically connected to the display (11), and the display (11) is fixed on the movable slider (13).

3. The simple splitting device for separating SiC grains after laser stealth cutting according to claim 2, characterized in that: The body (2) comprises an arm (21) and a base (22), the arm (21) is fixed on the base (22), a plurality of supporting bases are fixed on the lower end of the base (22), and a longitudinal displacement guide rail (12) is fixed on the upper end of the arm (21).

4. The simple splitting device for separating SiC grains after laser stealth cutting according to claim 1, characterized in that: The sheet metal structure (32) is provided with a hollow rectangle 1 (321), and the double-cleaving knife structure (33) is provided with a hollow rectangle 2 (331). The hollow rectangle 1 (321) and the hollow rectangle 2 (331) are both provided at the junction of the sheet metal structure (32) and the double-cleaving knife structure (33). The lower end of the double-cleaving knife structure (33) is provided with a contact end circular arc outer contour (332), and the contact end circular arc outer contour (332) is in an arc shape.

5. The simple splitting device for separating SiC grains after laser stealth cutting according to claim 1, characterized in that: The contact end profile (451) is in an arc shape.

6. The simple splitting device for separating SiC grains after laser stealth cutting according to claim 1, characterized in that: A SiC sample (41) is arranged on the Urea film (42), and a laser modified trace (411) of SiC internally cut by laser is present on the SiC sample (41).

7. The simple splitting device for separating SiC grains after laser stealth cutting according to claim 1, characterized in that: The support assembly (44) includes a linear buffer shaft (441) and a spring seat (442). The spring seat (442) is plugged and fixed on the sheet metal structure (47). A linear buffer shaft (441) is plugged into the spring seat (442). The linear buffer shaft (441) is wrapped by an elastic assembly inside the spring seat (442). The four linear buffer shafts (441) are all fixed on the loading platform (43).

8. The simple splitting device for separating SiC grains after laser stealth cutting according to claim 6, characterized in that: An elastic pocket (5) is laid between the described high-strength adhesive film (42) and the loading platform (43), and finger grooves are provided on all four sides of the loading platform (43). The elastic pocket (5) is clamped between the elastic clamp (6) and the finger grooves of the loading platform (43). The elastic clamp (6) includes a fixed shaft seat (61), a clamp (62) and a torsion spring (63). The fixed shaft seat (61) is fixed to the lower end of the loading platform (43), and a rotating shaft is fixed in the fixed shaft seat (61). The clamp (62) rotates on the rotating shaft through the torsion spring (63), one end of the torsion spring (63) is fixed to the lower end of the clamp (62), and the other end of the torsion spring (63) is fixed in the fixed shaft seat (61).

9. A simple splitting method for separating grains after laser implicit cutting of SiC, applicable to the simple splitting device for separating grains after laser implicit cutting of SiC according to any one of claims 1 to 8, characterized in that: The following steps are involved: S1: Place the sample: Place the SiC sample (41) cut by invisible laser on the PU (42) on the stage, and align the laser modified trace (411) of the SiC sample with the hollow rectangular area (49) of the stage; S2: Sample visual imaging: the driving gear (15) is adjusted until the display (11) shows a clearly focused SiC sample (41) and fixed; S3: Adjusting the single wedge alignment system: observing the microscopic image on the display (11), further controlling the movement of the SiC sample (41), and facilitating the alignment of the single wedge structure (45) with the laser modification trace (411) inside the SiC sample; S4: Adjust the double-cleaving knife alignment system: Regulate the double-cleaving knife structure (33) to apply downward pressure to the SiC sample (41), and apply an upward supporting force to the laser-modified trace (411) of the SiC sample through the single-cleaving knife structure (45). When the external force reaches the fracture threshold of the laser-modified trace (411) of the SiC sample, the two sides of the polyurethane (42) bend downward and receive the split SiC grains, thereby completing the grain separation.

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