Ultra-wideband cross-octave high-efficiency power amplifier and working mode design method thereof
By designing the ECGB/J type operating mode in an ultra-wideband power amplifier, considering the fundamental wave and second harmonics at the gate of the die, the calculation expression of input voltage and output current is optimized, solving the problem of reduced efficiency in traditional modes over octaves, and achieving higher efficiency and broadband performance.
Patent Information
- Application Number
- CN202510023633.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-07
- Publication Date
- 2025-05-06
AI Technical Summary
In the prior art, the efficiency of power amplifiers under ultra-wideband will deteriorate when spanning multiple octaves, and the traditional ECB/J operating mode will decrease while increasing bandwidth.
By designing a new operating mode ECGB/J class, taking into account the fundamental and second harmonics input at the die gate, the calculation expressions of the input voltage and output current are readjusted to optimize the efficiency of the power amplifier.
On the basis of ensuring bandwidth performance, the ECGB/J class operating mode significantly improves the efficiency of the power amplifier, which is 2%-8% higher than the traditional ECB/J class mode, and achieves an efficiency of more than 60% in the 1GHz to 4GHz band.
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Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of radio frequency transceiver systems, and in particular relates to an ultra-wideband cross-octave high-efficiency power amplifier and a method for designing an operating mode thereof. Background Art
[0002] With the advancement of scientific research, electronic warfare systems, multi-band defense and communication systems, cognitive radio, phased array radars, etc. all require wideband RF transceiver systems. As early as the last century, there were studies on the use of broadband multifunctional RF systems to simultaneously realize radar detection, communication, electronic warfare and other functions. Therefore, for integrated electronic equipment, the RF transceiver system needs to reflect commonality, which requires a power amplifier with ultra-wideband characteristics. The frequency band covered by contemporary communication technology has reached one or more octaves, which puts higher requirements on the power amplifier, an important component of the communication system, that is, high efficiency under ultra-wideband. However, the bandwidth and efficiency of the power amplifier are contradictory. The efficiency of the power amplifier that can work across multiple octaves will deteriorate to a certain extent.
[0003] At present, in the research on broadband power amplifiers, broadband matching structure can be used, but because this technology mainly controls the fundamental impedance, the harmonic energy is large and the efficiency is relatively low; some studies use real frequency technology (RFT) to complete broadband matching, but when this technology involves a frequency band exceeding an octave, the amount of calculation is huge and the matching circuit has many branches, and the circuit is very sensitive; in recent years, in order to expand the working bandwidth of the power amplifier while reducing power consumption, the widely used solutions are ECB / J type working mode with extended harmonic resistive components and ECF / ECF -1 Class operating mode. The ECB / J (Extended Continuous-Mode Class B / J) class operating mode is adopted. The tuned power amplifier (PA) with resistive harmonic components can make the fundamental impedance space and the harmonic impedance space close to each other, which can expand the entire bandwidth of the PA to a certain extent. The cost is the reduction of the efficiency of the entire frequency band, and when the bandwidth involves cross-octave, the efficiency is further reduced; the ECF / ECF -1 The efficiency of the PA in the ECB / J working mode will also decrease due to the introduction of harmonics, but in theory it can still maintain a high level compared to the ECB / J working mode. However, for actual transistors, when the operating frequency is high, it is difficult to match the second harmonic or third harmonic to the open circuit area due to the presence of drain capacitance, resulting in harmonic impedance mismatch. -1 The actual efficiency of the PA in the similar working mode is reduced. Summary of the invention
[0004] In order to solve the above problems existing in the prior art, the present invention provides an ultra-wideband cross-octave high-efficiency power amplifier and a method for designing its working mode. The technical problem to be solved by the present invention is achieved by the following technical solutions:
[0005] In a first aspect, an embodiment of the present invention provides a method for designing an operating mode of an ultra-wideband cross-octave high-efficiency power amplifier, comprising:
[0006] Analyze the problems existing in the working mode of the existing power amplifier, and determine the impact of introducing second harmonics in the working mode design process based on the analysis results;
[0007] Based on the fundamental wave and the second harmonic of the gate terminal of the tube core in the input power amplifier, an input voltage calculation expression at the gate terminal of the tube core in the power amplifier is designed to calculate the input voltage at the gate terminal of the tube core in the power amplifier according to the input voltage calculation expression;
[0008] Designing an output current calculation expression at the drain end of the tube core in the power amplifier according to the input voltage calculation expression, so as to calculate the output current at the drain end of the tube core in the power amplifier according to the output current calculation expression;
[0009] An efficiency calculation expression at the drain end of the tube core in the power amplifier is designed according to the output current calculation expression, so as to calculate the efficiency at the drain end of the tube core in the power amplifier according to the efficiency calculation expression of the power amplifier.
[0010] In one embodiment of the present invention, the designed input voltage calculation expression is:
[0011]
[0012] Among them, V gs represents the input voltage at the gate end of the tube core, θ represents the phase, r represents the ratio of the second harmonic voltage at the gate end of the input tube core to the input fundamental voltage, It represents the phase difference between the second harmonic at the gate end of the input tube core and the input fundamental wave.
[0013] In one embodiment of the present invention, the designed output current calculation expression is:
[0014]
[0015] Among them, I ECGBJ Represents the output current at the drain end of the die, V gs Represents the input voltage at the gate terminal of the die, I max Indicates the maximum current of the die in the power amplifier, β con It represents the conduction angle after considering the second harmonic effect at the gate end of the input die, β conBy formula Calculated.
[0016] In one embodiment of the present invention, the efficiency calculation expression at the drain end of the tube core in the designed power amplifier is:
[0017]
[0018] Among them, η ECGBJ Indicates the efficiency at the drain end of the power amplifier die, P 1f Represents the fundamental output power consumption at the drain end of the die, P dc Represents the DC static power consumption at the drain end of the die, I 1r Represents the real component of the fundamental current at the drain end of the die, V 1r Represents the real component of the fundamental voltage at the drain end of the die, I ECGBJ represents the output current at the drain end of the power amplifier, θ represents the phase, V EBJ Represents the output voltage at the drain end of the power amplifier, P dc =I dc V dc , I dc Represents the DC static power consumption current at the drain end of the die, V dc Represents the DC static power consumption voltage at the drain end of the die,
[0019] In one embodiment of the present invention, the working mode design method further includes:
[0020] An impedance calculation expression at the drain end of the tube core in the power amplifier is designed according to the output current calculation expression, so as to calculate the fundamental impedance and the second harmonic impedance at the drain end of the tube core in the power amplifier according to the impedance calculation expression.
[0021] In one embodiment of the present invention, the impedance calculation expression at the drain end of the tube core in the designed power amplifier is:
[0022]
[0023] When n=1, Z1 represents the fundamental impedance at the drain end of the tube core, V 1r Represents the real component of the fundamental voltage at the drain end of the die, V EBJ represents the output voltage at the drain end of the power amplifier, θ represents the phase, V 1i Represents the imaginary component of the fundamental voltage at the drain end of the die, I 1rRepresents the real component of the fundamental current at the drain end of the die, I ECGBJ Represents the output current at the drain end of the power amplifier die, I 1i Represents the imaginary component of the fundamental current at the drain end of the die, When n=2, Z2 represents the second harmonic impedance at the drain end of the tube core, V 2r It represents the real part of the second harmonic voltage at the drain end of the tube core. V 2i It represents the imaginary component of the second harmonic voltage at the drain end of the tube core. I 2r It represents the real part of the second harmonic current at the drain end of the tube core, I 2i Represents the imaginary component of the second harmonic current at the drain end of the tube core,
[0024] In one embodiment of the present invention, the working mode design method further includes:
[0025] The efficiency calculation expression of the power amplifier is designed according to the output current calculation expression.
[0026] In one embodiment of the present invention, the efficiency calculation expression of the designed power amplifier is:
[0027]
[0028] Among them, η PA Represents the efficiency of the power amplifier, P 1f Represents the fundamental output power consumption at the drain end of the die, P loss Represents the output loss of the power amplifier, P dc Represents the DC static power consumption at the drain end of the die, I 1r Represents the real component of the fundamental current at the drain end of the die, V 1r Represents the real component of the fundamental voltage at the drain end of the die, I ECGBJ represents the output current at the drain end of the power amplifier, θ represents the phase, V EBJ Represents the output voltage at the drain end of the power amplifier, P dc =I dc V dc , I dc Represents the DC static power consumption current at the drain end of the die, V dc Represents the DC static power consumption voltage at the drain end of the die,
[0029] In a second aspect, an embodiment of the present invention provides an ultra-wideband cross-octave high-efficiency power amplifier, the ultra-wideband cross-octave high-efficiency power amplifier comprising capacitors C1 to C5, resistors R1, R2, microstrips TL1 to TL15, power supplies Vg, power supplies Vd and a die; wherein,
[0030] One end of the capacitor C1 serves as the input end RFin of the power amplifier, the other end of the capacitor C1 is connected to one end of the microstrip TL1, one end of the microstrip TL2, and one end of the microstrip TL3, the other end of the microstrip TL3 is connected to one end of the microstrip TL4, one end of the microstrip TL5, one end of the capacitor C3, and one end of the resistor R2, the other end of the microstrip TL5 is connected to one end of the resistor R1, the other end of the resistor R1 is connected to one end of the microstrip TL6, the other end of the microstrip TL6 is connected to one end of the capacitor C2 and the positive electrode of the power supply Vg, the other end of the resistor R2 is connected to the other end of the capacitor C3 and one end of the microstrip TL7, the other end of the microstrip TL7 is connected to one end of the microstrip TL8, the other end of the microstrip TL8 is connected to the gate end of the tube core, and the drain end of the tube core is connected to one end of the microstrip TL9. The other end of the microstrip TL9 is connected to one end of the microstrip TL10 and one end of the microstrip TL11, the other end of the microstrip TL11 is connected to one end of the microstrip TL12 and one end of the microstrip TL13, the other end of the microstrip TL12 is connected to one end of the capacitor C4 and the positive electrode of the power supply Vd, the other end of the microstrip TL13 is connected to one end of the microstrip TL14 and one end of the microstrip TL15, the other end of the microstrip TL15 is connected to one end of the capacitor C5, the other end of the capacitor C5 serves as the output end RFout of the power amplifier, the other end of the capacitor C2, the negative electrode of the power supply Vg, the negative electrode of the power supply Vd, the other end of the capacitor C4, and the source end of the tube core are all grounded, and the other end of the microstrip TL2, the other end of the microstrip TL4, the other end of the microstrip TL10, and the other end of the microstrip TL14 are all suspended;
[0031] The working mode of the ultra-wideband cross-octave high-efficiency power amplifier is designed by the working mode design method of the ultra-wideband cross-octave high-efficiency power amplifier described in any one of the first aspects.
[0032] In one embodiment of the present invention, the model of the tube die is CGH40010F.
[0033] Beneficial effects of the present invention:
[0034] The working mode design method of the ultra-wideband cross-octave high-efficiency power amplifier proposed in the present invention takes into account the influence of input harmonics at the gate end of the tube core in the power amplifier, readjusts the input voltage calculation expression at the gate end of the tube core in the power amplifier, and the output current calculation expression at the drain end of the tube core in the power amplifier, so as to reduce the overlap of the output current and the output voltage by adjusting the input harmonics, and reshape the fundamental wave and harmonic impedance space. Compared with the traditional ECB / J-type working mode, the ECGB / J-type working mode proposed in the present invention has significantly improved efficiency while ensuring a certain bandwidth of the power amplifier; compared with other harmonic resistive extended continuous modes (ECF, ECF -1 ), under the condition of ensuring a certain efficiency of the power amplifier, the operating frequency band is significantly widened; compared with the existing multi-octave broadband power amplifier, the power amplifier designed with the working mode proposed by the present invention has higher efficiency. In general, the present invention realizes a working mode based on input harmonic regulation, which effectively improves the working efficiency of the power amplifier by introducing input harmonics while ensuring the bandwidth performance of the original ECB / J-class mode. Experiments have verified that the efficiency of the working mode designed by the present invention when applied to 1GHz to 4GHz broadband high-efficiency power amplifiers can reach more than 60%, and the working mode designed by the present invention can optimize the efficiency of cross-octave power amplifiers, which is of great significance to the development of ultra-wideband, cross-octave, and high-efficiency RF transceiver systems.
[0035] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS
[0036] Figure 1 It is a flow chart of a method for designing an operating mode of an ultra-wideband cross-octave high-efficiency power amplifier provided by an embodiment of the present invention;
[0037] Figure 2 It is a schematic diagram of the impedance space of a traditional continuous class B / J power amplifier;
[0038] Figure 3 It is a schematic diagram of the impedance space of the ECB / J class power amplifier;
[0039] Figure 4 It is a schematic diagram of the efficiency of ECB / Class J power amplifier;
[0040] Figure 5 is a schematic diagram of the efficiency of an ECGB / class J power amplifier proposed in an embodiment of the present invention;
[0041] Figure 6 is a schematic diagram of impedance space of an ECGB / class J power amplifier proposed in an embodiment of the present invention;
[0042] Figure 7 Schematic diagram of input voltage at the gate terminal of a tube core in an ECGB / J class power amplifier proposed in an embodiment of the present invention;
[0043] Figure 8 Schematic diagram of output current at the source end of the die in the ECGB / J class power amplifier proposed in an embodiment of the present invention;
[0044] Fig. 9 Schematic diagram of output voltage at the source end of the die in the ECGB / J class power amplifier proposed in an embodiment of the present invention;
[0045] Fig.10 is a schematic structural diagram of a power amplifier proposed in an embodiment of the present invention;
[0046] Fig.11 is a schematic diagram of the internal equivalent circuit structure of a tube core in a power amplifier proposed in an embodiment of the present invention;
[0047] Fig.12 It is a schematic diagram showing how the efficiency of the power amplifier proposed in the embodiment of the present invention varies with frequency. DETAILED DESCRIPTION
[0048] The present invention is further described in detail below with reference to specific embodiments, but the embodiments of the present invention are not limited thereto.
[0049] First, see Figure 1 The embodiment of the present invention provides a method for designing an operating mode of an ultra-wideband cross-octave high-efficiency power amplifier, which specifically includes the following steps:
[0050] S10. Analyze the problems existing in the working mode of the existing power amplifier, and determine the impact of introducing second harmonics in the working mode design process based on the analysis results.
[0051] The output voltage and output current calculation expressions of the traditional continuous B / J class power amplifier are shown in formula (1) and formula (2):
[0052]
[0053] Among them, V BJ Represents the output voltage at the source end of the die in a Class B / J power amplifier, V dc Represents the DC static power consumption voltage at the source end of the die, V knee represents the knee voltage of the tube core, θ represents the phase, α represents the continuity factor of the B / J class power amplifier, -1<α<1, I J Represents the output current at the source end of the die in a Class B / J power amplifier, I maxIndicates the maximum current of the die in the power amplifier. According to the above calculation expression, the fundamental impedance and the second harmonic impedance are derived as follows:
[0054] Z 1f =R Lopt (1+j×α) (3);
[0055]
[0056] Among them, Z 1f Represents the fundamental impedance at the source end of the die in a Class B / J power amplifier, R Lopt represents the optimal load of the B / J class power amplifier, j represents the imaginary unit, Z 2f represents the second harmonic impedance at the source end of the die in a class B / J power amplifier. From equations (3) and (4), we can get the traditional continuous class B / J impedance space as Figure 2 As shown: Figure 2 The red line in the middle shows the change of the fundamental impedance point with α, while the blue line shows the change of the second harmonic impedance point with α.
[0057] As the working bandwidth increases, when it crosses more than one octave, since the harmonic impedance of the traditional B / J mode is located on the periphery of the Smith circle, it is difficult to match the fundamental impedance of the high frequency band and the harmonic impedance of the low frequency band at the same time. Therefore, the ECB / J working mode can be obtained by introducing a new factor β into the output voltage calculation expression, while the output current calculation expression remains unchanged. The output voltage calculation expression is shown in formula (5):
[0058] V EBJ =V BJ ×(1-β)sin(θ) (5);
[0059] Among them, V EBJ Represents the output voltage at the source end of the tube core in the ECB / J class power amplifier. At this time, the calculation expressions of the fundamental impedance and the second harmonic impedance are shown in formula (6) and formula (7):
[0060] Z 1E f=((1-β)+jα(1-β / 4))×R L opt (6);
[0061]
[0062] Among them, Z 1Ef It represents the fundamental impedance at the source end of the die in an ECB / J class power amplifier, Z 2Ef represents the second harmonic impedance at the source end of the die in the ECB / J class power amplifier. From equations (6) and (7), the impedance space reshaped by the ECB / J class is obtained as Figure 3As shown: the three lines near the edge of the Smith circle represent the change of the second harmonic impedance point with α, and the three lines near the center of the Smith circle represent the change of the fundamental impedance point with α; with the increase of the β factor in the output voltage calculation expression, the second harmonic impedance and the fundamental impedance both move in the direction of increasing resistance; with the increase of β, the real part of the second harmonic impedance gradually increases, which is close to the fundamental impedance space, and a wide-band design can be achieved. However, due to the increase of harmonic energy, the efficiency gradually decreases. At this time, the efficiency calculation expression at the drain end of the tube core in the ECB / J class power amplifier is:
[0063]
[0064] Among them, η EBJ represents the efficiency of the die in an ECB / J class power amplifier. Formula (8) assumes that V knee is 0, when V knee When it is not 0, the efficiency becomes lower. Take the CGH40010F die for verification, assuming I max =1.5A, V dc =28V; Considering the knee voltage V knee After the influence of knee =4V When the die is in B / J class working state, the efficiency is calculated based on the B / J class output current and output voltage expression:
[0065]
[0066] Among them, η BJ Represents the efficiency of the tube core in the B / J class power amplifier. According to the ECB / J class output current calculation expression such as formula (2) and the output voltage calculation expression such as formula (5), taking β = 0.3, the efficiency in the ECB / J class mode changes with α as follows: Figure 4 As shown, Figure 4 The horizontal axis represents efficiency ( Figure 4 The vertical axis represents the continuity factor α ( Figure 4 It is denoted as α in the figure. It can be seen that the efficiency of the ECB / J class power amplifier will not change with α, but the efficiency is lower than that of the B / J class, which is 50.2%. It can be obtained that the fundamental impedance and the second harmonic impedance space are close to each other, and the bandwidth is widened, but the cost is the reduction of efficiency, and as β increases, the efficiency decreases accordingly. If a multi-octave broadband power amplifier is designed, in theory, in order to make the harmonic impedance and the fundamental impedance space closer, a larger β value is selected, and the efficiency reduction is more obvious.
[0067] Based on the above research, an embodiment of the present invention proposes a new working mode of a power amplifier, which is subsequently described as an ECGB / J-class mode. This mode simultaneously considers the influence of the fundamental wave and the second harmonic at the gate end of the tube core in the input power amplifier (the influence of higher harmonics is small and can be ignored).
[0068] S20. Based on the fundamental wave and the second harmonic of the gate terminal of the tube core in the input power amplifier, an input voltage calculation expression at the gate terminal of the tube core in the power amplifier is designed to calculate the input voltage at the gate terminal of the tube core in the power amplifier according to the input voltage calculation expression.
[0069] The input voltage calculation expression designed in the embodiment of the present invention is:
[0070]
[0071] Among them, V gs represents the input voltage at the gate end of the tube core, θ represents the phase, r represents the ratio of the second harmonic voltage at the gate end of the input tube core to the input fundamental voltage, It represents the phase difference between the second harmonic at the gate end of the input tube core and the input fundamental wave.
[0072] S30. Design an output current calculation expression at the drain terminal of the tube core in the power amplifier according to the input voltage calculation expression, so as to calculate the output current at the drain terminal of the tube core in the power amplifier according to the output current calculation expression.
[0073] Assuming that the die in the power amplifier is translinear, the output current calculation expression designed in the embodiment of the present invention is:
[0074]
[0075] Among them, I ECGBJ Represents the output current at the drain end of the die, V gs Represents the input voltage at the gate terminal of the die, I max Indicates the maximum current of the die in the power amplifier, β con It represents the conduction angle after considering the second harmonic effect at the gate end of the input die, β con By formula Calculated.
[0076] The output voltage of the die in the power amplifier can be calculated by referring to formula (5), that is, the output voltage of the die in the power amplifier in the ECGB / J class mode and the ECB / J class mode are equal.
[0077] S40, designing an efficiency calculation expression at the drain end of the tube core in the power amplifier according to the output current calculation expression, so as to calculate the efficiency at the drain end of the tube core in the power amplifier according to the efficiency calculation expression of the power amplifier.
[0078] The embodiment of the present invention performs Fourier transform on the output voltage calculation expression of formula (5) and the output current calculation expression of formula (10), and the voltage and current fundamental wave and each harmonic component can be obtained, and then the efficiency calculation expression at the drain end of the tube core in the power amplifier is:
[0079]
[0080] Among them, η ECGBJ Indicates the efficiency at the drain end of the power amplifier die, P 1f Represents the fundamental output power consumption at the drain end of the die, P dc Represents the DC static power consumption at the drain end of the die, I 1r Represents the real component of the fundamental current at the drain end of the die, V 1r Represents the real component of the fundamental voltage at the drain end of the die, I ECGBJ represents the output current at the drain end of the power amplifier, θ represents the phase, V EBJ Represents the output voltage at the drain end of the power amplifier, P dc =I dc V dc , I dc Represents the DC static power consumption current at the drain end of the die, V dc Represents the DC static power consumption voltage at the drain end of the die, It can be seen that the embodiment of the present invention ECGBJ for function, taking β = 0.3, r = 0.3, The efficiency changes with α as Figure 5 As shown, Figure 5 The horizontal axis represents the efficiency α( Figure 5 The vertical axis represents the continuity factor α ( Figure 5 α): When β = 0.3, the efficiency of the tube core in the ECB / J mode power amplifier changes with the continuity factor α. It is found that when α changes from -1 to 1, the efficiency of the PA remains unchanged. Therefore, the efficiency of the tube core in the ECGB / J mode power amplifier after considering the input second harmonic is compared with the efficiency of the tube core in the ECB / J mode power amplifier without considering the second harmonic (such as Figure 4 As shown) can be 2%-8% higher.
[0081] Furthermore, the working mode design method of the ultra-wideband cross-octave high-efficiency power amplifier proposed in the embodiment of the present invention also includes:
[0082] The efficiency calculation expression of the power amplifier is designed according to the output current calculation expression; the efficiency calculation expression of the designed power amplifier is:
[0083]
[0084] Among them, η PA Represents the efficiency of the power amplifier, P 1f Represents the fundamental output power consumption at the drain end of the die, P loss Represents the output loss of the power amplifier, P dc Represents the DC static power consumption at the drain end of the die, I 1r Represents the real component of the fundamental current at the drain end of the die, V 1r Represents the real component of the fundamental voltage at the drain end of the die, I ECGBJ Represents the output current at the drain end of the power amplifier, θ represents the phase, and I 1r for Function V EBJ Represents the output voltage at the drain end of the power amplifier. At this time, V 1r is a function of (α, β), P dc =I dc V dc , I dc Represents the DC static power consumption current at the drain end of the die, At this time I dc for The function of V dc Represents the DC static power consumption voltage at the drain end of the die, At this time V dc (α, β) function. It can be seen that the embodiment of the present invention η PA for function.
[0085] Furthermore, the working mode design method of the ultra-wideband cross-octave high-efficiency power amplifier proposed in the embodiment of the present invention also includes:
[0086] According to the output current calculation expression, an impedance calculation expression of the tube core in the power amplifier is designed, so as to calculate the fundamental impedance and the second harmonic impedance of the tube core in the power amplifier according to the impedance calculation expression; the impedance calculation expression of the tube core in the designed power amplifier is:
[0087]
[0088] When n=1, Z1 represents the fundamental impedance at the drain end of the tube core, V 1r Represents the real component of the fundamental voltage at the drain end of the die, VEBJ represents the output voltage at the drain end of the power amplifier, θ represents the phase, V 1i Represents the imaginary component of the fundamental voltage at the drain end of the die, I 1r Represents the real component of the fundamental current at the drain end of the die, I ECGBJ Represents the output current at the drain end of the power amplifier die, I 1i Represents the imaginary component of the fundamental current at the drain end of the die, When n=2, Z2 represents the second harmonic impedance at the drain end of the tube core, V 2r It represents the real part of the second harmonic voltage at the drain end of the tube core. V 2i It represents the imaginary component of the second harmonic voltage at the drain end of the tube core. I 2r It represents the real part of the second harmonic current at the drain end of the tube core, I 2i Represents the imaginary component of the second harmonic current at the drain end of the tube core, When r = 0.3, When the impedance space is plotted as Figure 6 As shown: the three lines near the edge of the Smith circle represent the change of the second harmonic impedance point with α, and the three lines near the center of the Smith circle represent the change of the fundamental impedance point with α. As the β factor in the output voltage calculation expression increases, the second harmonic impedance and the fundamental impedance both move in the direction of increasing resistance; compared to Figure 3 , the fundamental impedance and the second harmonic impedance space do not change much, therefore, the ECGB / J working mode proposed in the present invention can ensure that the fundamental impedance and the second harmonic impedance space are not lost, and can also improve the efficiency on the basis of the traditional ECB / J mode PA broadband. For example, the calculated input voltage V gs like Figure 7 As shown, the output current I ECGBJ like Figure 8 As shown, the output voltage V EBJ like Fig. 9 As shown, Figure 7 , Figure 8 and Fig. 9 The horizontal axis represents the phase θ( Figure 7 and Figure 8 denoted as theta), Figure 7 The vertical axis represents the input voltage V at the gate terminal of the tube core gs , Figure 8 The vertical axis represents the output current I at the drain end of the tube core ECGBJ , Fig. 9The vertical axis represents the output voltage V at the drain end of the die. EBJ .
[0089] In summary, the working mode design method of the ultra-wideband cross-octave high-efficiency power amplifier proposed in the embodiment of the present invention takes into account the influence of the input harmonics at the gate end of the tube core in the power amplifier, readjusts the input voltage calculation expression at the gate end of the tube core in the power amplifier, and the output current calculation expression at the drain end of the tube core in the power amplifier, so as to reduce the overlap of the output current and the output voltage by adjusting the input harmonics, and reshape the fundamental wave and harmonic impedance space. Compared with the traditional ECB / J-type working mode, the ECGB / J-type working mode proposed in the present invention has significantly improved efficiency while ensuring a certain bandwidth of the power amplifier; compared with other harmonic resistive extended continuous modes (ECF, ECF -1 ), under the condition of ensuring a certain efficiency of the power amplifier, the operating frequency band is significantly widened; compared with the existing multi-octave broadband power amplifier, the power amplifier designed with the working mode proposed by the present invention has higher efficiency. In general, the embodiment of the present invention realizes a working mode based on input harmonic regulation, which effectively improves the working efficiency of the power amplifier by introducing input harmonics while ensuring the bandwidth performance of the original ECB / J-class mode. Experiments have verified that the efficiency of the working mode designed by the present invention when applied to a 1GHz to 4GHz broadband high-efficiency power amplifier can reach more than 60%, and the working mode designed by the present invention can optimize the efficiency of cross-octave power amplifiers, which is of great significance to the development of ultra-wideband, cross-octave, and high-efficiency RF transceiver systems.
[0090] Second, see Fig.10 The embodiment of the present invention provides an ultra-wideband cross-octave high-efficiency power amplifier, the ultra-wideband cross-octave high-efficiency power amplifier includes capacitors C1 to C5, resistors R1, R2, microstrips TL1 to TL15, power supplies Vg, power supplies Vd and a tube core; wherein,
[0091] One end of the capacitor C1 serves as the input end RFin of the power amplifier, the other end of the capacitor C1 is connected to one end of the microstrip TL1, one end of the microstrip TL2, and one end of the microstrip TL3, the other end of the microstrip TL3 is connected to one end of the microstrip TL4, one end of the microstrip TL5, one end of the capacitor C3, and one end of the resistor R2, the other end of the microstrip TL5 is connected to one end of the resistor R1, the other end of the resistor R1 is connected to one end of the microstrip TL6, the other end of the microstrip TL6 is connected to one end of the capacitor C2 and the positive electrode of the power supply Vg, the other end of the resistor R2 is connected to the other end of the capacitor C3 and one end of the microstrip TL7, the other end of the microstrip TL7 is connected to one end of the microstrip TL8, the other end of the microstrip TL8 is connected to the gate end of the tube core, and the drain end of the tube core is connected to one end of the microstrip TL9. The other end of microstrip TL9 is connected to one end of microstrip TL10 and one end of microstrip TL11, the other end of microstrip TL11 is connected to one end of microstrip TL12 and one end of microstrip TL13, the other end of microstrip TL12 is connected to one end of capacitor C4 and the positive electrode of power supply Vd, the other end of microstrip TL13 is connected to one end of microstrip TL14 and one end of microstrip TL15, the other end of microstrip TL15 is connected to one end of capacitor C5, the other end of capacitor C5 serves as the output end RFout of the power amplifier, the other end of capacitor C2, the negative electrode of power supply Vg, the negative electrode of power supply Vd, the other end of capacitor C4, and the source end of the tube core are all grounded, and the other end of microstrip TL2, the other end of microstrip TL4, the other end of microstrip TL10, and the other end of microstrip TL14 are all suspended.
[0092] Among them, the working mode of the ultra-wideband cross-octave high-efficiency power amplifier is designed by any working mode design method of the ultra-wideband cross-octave high-efficiency power amplifier in the first aspect; the model of the tube core can be CGH40010F.
[0093] In order to verify that the ECGB / J mode can ensure that the power amplifier has broadband performance and can also improve efficiency, the embodiment of the present invention uses the CGH40010F die for simulation verification and designs a 1GHz to 4GHz double-octave high-efficiency power amplifier. The circuit topology is as follows: Fig.10 As shown, Fig.10 The three nodes of the die are shown in Figure 1: G represents the equivalent gate node after considering the package (input parasitic network), D represents the equivalent drain node after considering the package (output parasitic network), and S is the die source node (this node is ideally connected to the ground). Fig.11 for Fig.10 The equivalent circuit of the middle die consists of input and output parasitic parameter networks and current sources. Fig.11 The input voltage V is marked in gs , output current I ECGBJ And the output voltage V EBJ ,pass Fig.11 The matching network is designed with the input voltage V derived from theory. gs , the output current is the theoretically derived I ECGBJ , the output voltage is V obtained by theoretical derivation EBJ The waveforms of the input voltage, output current, and output voltage inside the die fit the waveforms derived from the theory; the final layout simulation results are as follows Fig.12 As shown, Fig.12 The horizontal axis represents the frequency value within 1GHz~4GHz ( Fig.12 RFreq), Fig.12 The vertical axis represents efficiency ( Fig.12 The simulation results show that within the operating frequency band of 1 GHz to 4 GHz with a bandwidth of 2 octaves, the efficiency of the power amplifier is greater than 60%.
[0094] As for the device embodiment of the second aspect, since it is basically similar to the method embodiment of the first aspect, the description is relatively simple, and the relevant parts may refer to the partial description of the method embodiment of the first aspect.
[0095] In the description of the present invention, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.
[0096] Although the present invention is described herein in conjunction with various embodiments, in the process of implementing the claimed invention, those skilled in the art may understand and implement other variations of the disclosed embodiments by viewing the specification and its drawings. In the specification, the word "comprising" does not exclude other components or steps, and "a" or "one" does not exclude multiple situations. Certain measures are recorded in different embodiments, but this does not mean that these measures cannot be combined to produce good results.
[0097] The above contents are further detailed descriptions of the present invention in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is limited to these descriptions. For ordinary technicians in the technical field to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, which should be regarded as falling within the protection scope of the present invention.
Claims
1. A method for designing an operating mode of an ultra-wideband, cross-octave, high-efficiency power amplifier, characterized in that: The working mode design method comprises: Analyze the problems existing in the working mode of the existing power amplifier, and determine the impact of introducing second harmonics in the working mode design process based on the analysis results; Based on the fundamental wave and the second harmonic of the gate terminal of the tube core in the input power amplifier, an input voltage calculation expression at the gate terminal of the tube core in the power amplifier is designed to calculate the input voltage at the gate terminal of the tube core in the power amplifier according to the input voltage calculation expression; Designing an output current calculation expression at the drain end of the tube core in the power amplifier according to the input voltage calculation expression, so as to calculate the output current at the drain end of the tube core in the power amplifier according to the output current calculation expression; An efficiency calculation expression at the drain end of the tube core in the power amplifier is designed according to the output current calculation expression, so as to calculate the efficiency at the drain end of the tube core in the power amplifier according to the efficiency calculation expression of the power amplifier.
2. The method for designing an operating mode of an ultra-wideband cross-octave high-efficiency power amplifier according to claim 1, characterized in that: The designed input voltage calculation expression is: Among them, V gs represents the input voltage at the gate end of the tube core, θ represents the phase, r represents the ratio of the second harmonic voltage at the gate end of the input tube core to the input fundamental voltage, It represents the phase difference between the second harmonic at the gate end of the input tube core and the input fundamental wave.
3. The method for designing an operating mode of an ultra-wideband cross-octave high-efficiency power amplifier according to claim 1, characterized in that: The designed output current calculation expression is: Among them, I ECGBJ Represents the output current at the drain end of the die, V gs Represents the input voltage at the gate terminal of the die, I max Indicates the maximum current of the die in the power amplifier, β con It represents the conduction angle after considering the second harmonic effect at the gate end of the input die, β con By formula Calculated.
4. The method for designing an operating mode of an ultra-wideband cross-octave high-efficiency power amplifier according to claim 1, characterized in that: The efficiency calculation expression at the drain end of the designed power amplifier is: Among them, η ECGBJ It represents the efficiency at the drain end of the power amplifier, P 1f Represents the fundamental output power consumption at the drain end of the die, P dc Represents the DC static power consumption at the drain end of the die, I 1r Represents the real component of the fundamental current at the drain end of the die, V 1r Represents the real component of the fundamental voltage at the drain end of the die, I ECGBJ represents the output current at the drain end of the power amplifier, θ represents the phase, V EBJ Represents the output voltage at the drain end of the power amplifier, P dc =I dc V dc , I dc Represents the DC static power consumption current at the drain end of the die, V dc Represents the DC static power consumption voltage at the drain end of the die, 5. The method for designing an operating mode of an ultra-wideband cross-octave high-efficiency power amplifier according to claim 1, characterized in that: The working mode design method also includes: An impedance calculation expression at the drain end of the tube core in the power amplifier is designed according to the output current calculation expression, so as to calculate the fundamental impedance and the second harmonic impedance at the drain end of the tube core in the power amplifier according to the impedance calculation expression.
6. The method for designing an operating mode of an ultra-wideband cross-octave high-efficiency power amplifier according to claim 5, characterized in that: The impedance calculation expression at the drain end of the designed power amplifier is: When n=1, Z1 represents the fundamental impedance at the drain end of the tube core, V 1r Represents the real component of the fundamental voltage at the drain end of the die, V EBJ represents the output voltage at the drain end of the power amplifier, θ represents the phase, V 1i Represents the imaginary component of the fundamental voltage at the drain end of the die, I 1r Represents the real component of the fundamental current at the drain end of the die, I ECGBJ Represents the output current at the drain end of the power amplifier die, I 1i Represents the imaginary component of the fundamental current at the drain end of the die, When n=2, Z2 represents the second harmonic impedance at the drain end of the tube core, V 2r It represents the real part of the second harmonic voltage at the drain end of the tube core. V 2i It represents the imaginary component of the second harmonic voltage at the drain end of the tube core. I 2r It represents the real part of the second harmonic current at the drain end of the tube core, I 2i Represents the imaginary component of the second harmonic current at the drain end of the tube core, 7. The method for designing an operating mode of an ultra-wideband cross-octave high-efficiency power amplifier according to claim 1, characterized in that: The working mode design method also includes: The efficiency calculation expression of the power amplifier is designed according to the output current calculation expression.
8. The method for designing an operating mode of an ultra-wideband cross-octave high-efficiency power amplifier according to claim 7, characterized in that: The efficiency calculation expression of the designed power amplifier is: Among them, η PA Represents the efficiency of the power amplifier, P 1f Represents the fundamental output power consumption at the drain end of the die, P loss Represents the output loss of the power amplifier, P dc Represents the DC static power consumption at the drain end of the die, I 1r Represents the real component of the fundamental current at the drain end of the die, V 1r Represents the real component of the fundamental voltage at the drain end of the die, I ECGBJ represents the output current at the drain end of the power amplifier, θ represents the phase, V EBJ Represents the output voltage at the drain end of the power amplifier, P dc =I dc V dc , I dc Represents the DC static power consumption current at the drain end of the die, V dc Represents the DC static power consumption voltage at the drain end of the die, 9. An ultra-wideband, cross-octave, high-efficiency power amplifier, characterized in that: The ultra-wideband cross-octave high-efficiency power amplifier comprises capacitors C1 to C5, resistors R1, R2, microstrips TL1 to TL15, power supplies Vg, Vd and a tube core; wherein, One end of the capacitor C1 serves as the input end RFin of the power amplifier, the other end of the capacitor C1 is connected to one end of the microstrip TL1, one end of the microstrip TL2, and one end of the microstrip TL3, the other end of the microstrip TL3 is connected to one end of the microstrip TL4, one end of the microstrip TL5, one end of the capacitor C3, and one end of the resistor R2, the other end of the microstrip TL5 is connected to one end of the resistor R1, the other end of the resistor R1 is connected to one end of the microstrip TL6, the other end of the microstrip TL6 is connected to one end of the capacitor C2 and the positive electrode of the power supply Vg, the other end of the resistor R2 is connected to the other end of the capacitor C3 and one end of the microstrip TL7, the other end of the microstrip TL7 is connected to one end of the microstrip TL8, the other end of the microstrip TL8 is connected to the gate end of the tube core, and the drain end of the tube core is connected to one end of the microstrip TL9. The other end of the microstrip TL9 is connected to one end of the microstrip TL10 and one end of the microstrip TL11, the other end of the microstrip TL11 is connected to one end of the microstrip TL12 and one end of the microstrip TL13, the other end of the microstrip TL12 is connected to one end of the capacitor C4 and the positive electrode of the power supply Vd, the other end of the microstrip TL13 is connected to one end of the microstrip TL14 and one end of the microstrip TL15, the other end of the microstrip TL15 is connected to one end of the capacitor C5, the other end of the capacitor C5 serves as the output end RFout of the power amplifier, the other end of the capacitor C2, the negative electrode of the power supply Vg, the negative electrode of the power supply Vd, the other end of the capacitor C4, and the source end of the tube core are all grounded, and the other end of the microstrip TL2, the other end of the microstrip TL4, the other end of the microstrip TL10, and the other end of the microstrip TL14 are all suspended; The working mode of the ultra-wideband cross-octave high-efficiency power amplifier is designed by the working mode design method of the ultra-wideband cross-octave high-efficiency power amplifier according to any one of claims 1 to 8.
10. The ultra-wideband cross-octave high-efficiency power amplifier according to claim 9, characterized in that: The model of the tube core is CGH40010F.
Citation Information
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