Low-noise amplification circuit and radio frequency power amplifier module

Abstract

The present invention provides a low-noise amplification circuit and a radio frequency power amplifier module. Among them, the low-noise amplification circuit includes an input matching circuit, a cascode amplification structure, an output matching circuit, and a path switching component; the input matching circuit includes a first inductor, a second inductor, a first capacitor, and a third inductor; the output matching circuit includes a fourth inductor, a second capacitor, a fifth inductor, a third capacitor, and a fourth capacitor; the path switching component is used to select the path of the low-noise amplification circuit, so that the radio frequency signal accessed by the first inductor is directly output or output after being amplified by the cascode amplification structure. The low-noise amplification circuit in the present invention can reduce its noise figure and make the gain match without increasing the order of the input and output matching networks, and correspondingly will not increase the cost and area of the low-noise amplification circuit.

Description

Technical Field

[0001] The present invention relates to the field of wireless communication technologies, and particularly to a low-noise amplifier circuit and a radio frequency power amplifier module. Background Art

[0002] With the development and progress of technology, ultra-wideband has been developed and applied to various aspects of daily life due to its characteristics of low power consumption, low cost, and precise ranging. Smart electronic devices such as mobile phones and tablets have become indispensable tools. For example, through the ultra-wideband transceiver installed on a mobile phone, it is possible to easily locate small items carried with you such as headphones and keys, and it can also be used as a wireless key for unlocking and locking cars.

[0003] In order to achieve gain matching and low noise within a relatively wide bandwidth in the existing low-noise amplifiers, the common method is to increase the order of the input and output matching networks and increase the inductive coupling of the feedback and input and output circuits. Among them, the quality factor of the input matching network directly determines the size of the noise figure, and the output matching network determines the gain flatness.

[0004] Although increasing the order of the input and output matching networks can make the low-noise amplifier achieve gain matching and low noise within a relatively wide bandwidth, increasing the order of the input and output matching networks also requires an increase in inductors, and the increase in inductors will lead to an increase in the cost and a too large area of the low-noise amplifier.

[0005] In summary, although the low-noise amplifier in the prior art can reduce its noise figure and achieve gain matching by increasing the order of the input and output matching networks, it will lead to an increase in its cost and a too large area. Summary of the Invention

[0006] In view of the above deficiencies of the prior art, the present invention provides a low-noise amplifier circuit and a radio frequency power amplifier module to solve the problem that the low-noise amplifier in the prior art increases the order of the input and output matching networks to reduce its noise figure and achieve gain matching, thereby resulting in an increase in the cost and a too large area of the low-noise amplifier.

[0007] To solve the above technical problems, the present invention adopts the following technical solutions:

[0008] In a first aspect, the present invention provides a low-noise amplifier circuit, which includes an input matching circuit, a cascode amplification structure, an output matching circuit, and a path switching component;

[0009] The input matching circuit includes a first inductor, a second inductor, a first capacitor, and a third inductor;

[0010] The first end of the first inductor is used to connect to a radio frequency signal, and the second end of the first inductor is grounded;

[0011] The first end of the second inductor is connected to the first end of the first inductor;

[0012] The first end of the first capacitor is connected to the second end of the second inductor, and the second end of the first capacitor is connected to the ground terminal of the cascode amplifier structure;

[0013] The first end of the third inductor is connected to the ground terminal of the cascode amplifier structure, and the second end of the third inductor is grounded;

[0014] The input terminal of the cascode amplifier structure is connected to the second end of the second inductor;

[0015] The output matching circuit includes a fourth inductor, a second capacitor, a fifth inductor, a third capacitor, and a fourth capacitor;

[0016] The first end of the fourth inductor is connected to the output terminal of the cascode amplifier structure, and the second end of the fourth inductor is used to access the operating voltage;

[0017] The first end of the second capacitor is connected to the output terminal of the cascode amplifier structure and serves as the second input terminal of the output matching circuit;

[0018] The first end of the fifth inductor is connected to the second end of the second capacitor, and the second end of the fifth inductor is used to output a radio frequency signal;

[0019] The first end of the third capacitor is used to access the operating voltage, and the second end of the third capacitor is connected to the second end of the second capacitor;

[0020] The first end of the fourth capacitor is connected to the first end of the third capacitor, and the second end of the fourth capacitor is connected to the second end of the fifth inductor;

[0021] The path switching component is used to select the path of the low-noise amplifier circuit, so that the radio frequency signal received by the first inductor is directly output or output after being amplified by the cascode amplifier structure.

[0022] Preferably, the low-noise amplifier circuit further includes a fifth capacitor; the first end of the fifth capacitor is connected to the second end of the second inductor, and the second end of the fifth capacitor is respectively connected to the first end of the first capacitor and the input terminal of the cascode amplifier structure.

[0023] Preferably, the cascode amplifier structure includes a first field-effect transistor and a second field-effect transistor;

[0024] The gate of the first field-effect transistor serves as the input terminal of the cascode amplifier structure, and the source of the first field-effect transistor serves as the ground terminal of the cascode amplifier structure;

[0025] The gate of the second field effect transistor is used to access a bias voltage. The source of the second field effect transistor is connected to the drain of the first field effect transistor, and the drain of the second field effect transistor serves as the output terminal of the cascode amplification structure.

[0026] Preferably, the path switching component includes a third field effect transistor, a fourth field effect transistor, a fifth field effect transistor, a sixth field effect transistor, and a seventh field effect transistor. The gates of the third field effect transistor, the fourth field effect transistor, the fifth field effect transistor, the sixth field effect transistor, and the seventh field effect transistor are respectively used to access control signals;

[0027] One end of the drain and the source of the third field effect transistor is connected to the first end of the first inductor, and the other end of the drain and the source of the third field effect transistor is connected to the first end of the second inductor;

[0028] One end of the drain and the source of the fourth field effect transistor is connected to the first end of the fifth inductor, and the other end of the drain and the source of the fourth field effect transistor is used to output the radio frequency signal output by the fifth inductor to the outside;

[0029] One end of the drain and the source of the fifth field effect transistor is connected to the first end of the first inductor;

[0030] One end of the drain and the source of the sixth field effect transistor is connected to the other end of the drain and the source of the fifth field effect transistor, and the other end of the drain and the source of the sixth field effect transistor is grounded;

[0031] One end of the drain and the source of the seventh field effect transistor is connected to the other end of the drain and the source of the fifth field effect transistor, and the other end of the drain and the source of the seventh field effect transistor is used to output a radio frequency signal.

[0032] Preferably, the path switching component includes a first single-pole single-throw switch, a second single-pole single-throw switch, a third single-pole single-throw switch, a fourth single-pole single-throw switch, and a fifth single-pole single-throw switch;

[0033] The control terminal of the first single-pole single-throw switch is connected to the first end of the first inductor, and the output terminal of the first single-pole single-throw switch is connected to the first end of the second inductor;

[0034] The control terminal of the second single-pole single-throw switch is connected to the second end of the fifth inductor, and the output terminal of the second single-pole single-throw switch is used to output the radio frequency signal output by the fifth inductor to the outside;

[0035] The control terminal of the third single-pole single-throw switch is connected to the first end of the first inductor;

[0036] The control terminal of the fourth single-pole single-throw switch is connected to the output terminal of the third single-pole single-throw switch, and the output terminal of the fourth single-pole single-throw switch is grounded;

[0037] The control terminal of the fifth single-pole single-throw switch is connected to the output terminal of the third single-pole single-throw switch, and the output terminal of the fifth single-pole single-throw switch is used to output a radio frequency signal.

[0038] In a second aspect, the present invention provides a radio frequency power amplifier module, which includes the low-noise amplification circuit as described above.

[0039] Compared with the prior art, in the low-noise amplification circuit of the present invention, by introducing a parallel-connected first inductor, the electrostatic discharge protection function can be achieved through the first inductor, and the parasitics of the capacitance between the input terminal of the input matching circuit and the ground can be reduced, so as to improve the gain of the low-noise amplification circuit and reduce its noise figure. At the same time, it can be used as the matching of the bypass path to reduce the insertion of the bypass path, and can also provide greater flexibility for the balance of input gain matching and noise matching, and can better compromise the return loss and noise figure at the input terminal of the input matching circuit; in addition, by introducing the third capacitor, the fifth inductor and the fourth capacitor, greater freedom can be provided for the output matching circuit and a dual-frequency matching network can be realized. By controlling the spacing, depth, width and balance of the dual-frequency points, better matching can be achieved within the target frequency band. That is, the low-noise amplification circuit in the present invention can reduce its noise figure and achieve gain matching without increasing the order of the input and output matching networks, and correspondingly will not increase the cost and area of the low-noise amplification circuit. Description of the Drawings

[0040] The present invention will be described in detail below with reference to the drawings. Through the detailed description in combination with the following drawings, the above or other aspects of the present invention will become clearer and easier to understand. In the drawings:

[0041] Figure 1 is the overall circuit structure diagram of the low-noise amplification circuit provided by the embodiment of the present invention. Detailed Embodiments

[0042] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which this application belongs; the terms used in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above description of the drawings are intended to cover non-exclusive inclusion. The terms "first", "second", etc. in the specification and claims of this application or the above drawings are used to distinguish different objects and are not used to describe a specific order.

[0043] As used herein, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of the present application. The phrase appears in various places in the specification and does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art will explicitly and implicitly understand that the embodiments described herein may be combined with other embodiments.

[0044] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0045] Embodiment 1

[0046] An embodiment of the present invention provides a low-noise amplifier circuit 100, which includes Figure 1 as shown, comprising an input matching circuit 1, a cascode amplifier structure 2, an output matching circuit 3, and a path switching component 4.

[0047] Among them, the input matching circuit 1 includes a first inductor L1, a second inductor L2, a first capacitor C1, and a third inductor L3; the main function of the first inductor L1 is to balance input matching and noise matching and increase the matching bandwidth, the first capacitor C1 serves as a compensation capacitor, and the third inductor L3 serves as a negative feedback inductor.

[0048] The first end of the first inductor L1 is used to connect to the radio frequency signal RFIN, and the second end of the first inductor L1 is grounded.

[0049] The first end of the second inductor L2 is connected to the first end of the first inductor L1 and serves as the input end of the input matching circuit 1, and the second end of the second inductor L2 serves as the output end of the input matching circuit 1.

[0050] The first end of the first capacitor C1 is connected to the second end of the second inductor L2, and the second end of the first capacitor C1 is connected to the ground end of the cascode amplifier structure 2.

[0051] The first end of the third inductor L3 is connected to the ground end of the cascode amplifier structure 2, and the second end of the third inductor L3 is grounded.

[0052] The input end of the cascode amplifier structure 2 is connected to the second end of the second inductor L2.

[0053] The output matching circuit 3 includes a fourth inductor L4, a second capacitor C2, a fifth inductor L5, a third capacitor C3, and a fourth capacitor C4; the introduction of the third capacitor C3, the fifth inductor L5, and the fourth capacitor C4 is for the purpose of achieving dual-frequency matching. The third capacitor C3 is used to control the dual-frequency points or the spacing between the two frequency points. The fifth inductor L5 is used to control the depth of the dual-frequency points. The fourth capacitor C4 is used to control the balance between the depths of the dual-frequency points.

[0054] The first end of the fourth inductor L4 is connected to the output end of the cascode amplifier structure 2, and the second end of the fourth inductor L4 is used to access the operating voltage VDD and serves as the first input end of the output matching circuit 3.

[0055] The first end of the second capacitor C2 is connected to the output end of the cascode amplifier structure 2 and serves as the second input end of the output matching circuit 3.

[0056] The first end of the fifth inductor L5 is connected to the second end of the second capacitor C2, and the second end of the fifth inductor L5 serves as the output end of the output matching circuit 3 and is used to output the radio frequency signal RFOUT.

[0057] The first end of the third capacitor C3 is used to access the operating voltage VDD, and the second end of the third capacitor C3 is connected to the second end of the second capacitor C2.

[0058] The first end of the fourth capacitor C4 is connected to the first end of the third capacitor C3, and the second end of the fourth capacitor C4 is connected to the second end of the fifth inductor L5.

[0059] The path switching component 4 is used to select the through path of the low-noise amplifier circuit 100, so that the radio frequency signal RFIN accessed by the first inductor L1 is directly output or output after being amplified by the cascode amplifier structure 2.

[0060] In this embodiment, the low-noise amplifier circuit 100 further includes a fifth capacitor C5, and the fifth capacitor C5 serves as a DC blocking capacitor; the first end of the fifth capacitor C5 is connected to the second end of the second inductor L2, and the second end of the fifth capacitor C5 is respectively connected to the first end of the first capacitor C1 and the input end of the cascode amplifier structure 2.

[0061] In this embodiment, the cascode amplifier structure 2 includes a first field-effect transistor M1 and a second field-effect transistor M2; the first field-effect transistor M1 and the second field-effect transistor M2 form a cascode amplifier structure.

[0062] The gate of the first field-effect transistor M1 serves as the input end of the cascode amplifier structure 2, and the source of the first field-effect transistor M1 serves as the ground end of the cascode amplifier structure 2.

[0063] The gate of the second field effect transistor M2 is used to access a bias voltage. The source of the second field effect transistor M2 is connected to the drain of the first field effect transistor M1, and the drain of the second field effect transistor M2 serves as the output terminal of the cascode amplifier structure 2.

[0064] In this embodiment, the path switching component 4 includes a third field effect transistor S1, a fourth field effect transistor S2, a fifth field effect transistor S3, a sixth field effect transistor S4, and a seventh field effect transistor S5. The gates of the third field effect transistor S1, the fourth field effect transistor S2, the fifth field effect transistor S3, the sixth field effect transistor S4, and the seventh field effect transistor S5 are respectively used to access a control signal, which can be an enable signal or a voltage, etc.

[0065] One end of the drain and source of the third field effect transistor S1 is connected to the first end of the first inductor L1, and the other end of the drain and source of the third field effect transistor S1 is connected to the first end of the second inductor L2.

[0066] One end of the drain and source of the fourth field effect transistor S2 is connected to the first end of the fifth inductor L5, and the other end of the drain and source of the fourth field effect transistor S2 is used to output the radio frequency signal RFOUT output by the fifth inductor L5 to the outside.

[0067] One end of the drain and source of the fifth field effect transistor S3 is connected to the first end of the first inductor L1.

[0068] One end of the drain and source of the sixth field effect transistor S4 is connected to the other end of the drain and source of the fifth field effect transistor S3, and the other end of the drain and source of the sixth field effect transistor S4 is grounded.

[0069] One end of the drain and source of the seventh field effect transistor S5 is connected to the other end of the drain and source of the fifth field effect transistor S3, and the other end of the drain and source of the seventh field effect transistor S5 is used to output the radio frequency signal RFOUT.

[0070] When the low-noise amplifier circuit 100 in this embodiment operates in the amplification mode, that is, when the radio frequency signal RFIN connected to the first inductor L1 is amplified by the cascode amplifier structure 2 and then output, the third field effect transistor S1, the fourth field effect transistor S2, and the sixth field effect transistor S4 are connected, and the fifth field effect transistor S3 and the seventh field effect transistor S5 are disconnected. When the low-noise amplifier circuit 100 operates in the bypass mode, that is, when the radio frequency signal RFIN connected to the first inductor L1 is directly output, the third field effect transistor S1, the fourth field effect transistor S2, and the sixth field effect transistor S4 are disconnected, and the fifth field effect transistor S3 and the seventh field effect transistor S5 are connected.

[0071] The output matching circuit 3 essentially belongs to a dual - frequency matching network. By controlling the two center frequencies 6.2G and 8.3G, a better match can be achieved within the required bandwidth, rather than the entire passband. For example, in an application scenario of ultra - wideband, the frequency bands of 6.2 - 6.8G and 7.7 - 8.3G are mainly used, and the nearly 1G frequency band of 6.8 - 7.7G in the middle does not need to be concerned about.

[0072] Compared with the prior art, in the low - noise amplifier circuit 100 of this embodiment, by introducing a parallel first inductor L1, the electrostatic discharge protection function can be achieved through this first inductor L1, and the parasitics of the input capacitance to ground at the input end of the input matching circuit 1 can be reduced, so as to improve the gain of the low - noise amplifier circuit 100 and reduce its noise figure. At the same time, it can be used as the matching of the bypass path to reduce the insertion of the bypass path, and can also provide greater flexibility for the balance of input gain matching and noise matching, and can better compromise the return loss and noise figure at the input end of the input matching circuit 1. In order to minimize the noise figure of the low - noise amplifier circuit 100, both the first inductor L1 and the second inductor L2 can be set to have a higher quality factor; in addition, by introducing the third capacitor C3, the fifth inductor L5 and the fourth capacitor C4, greater freedom can be provided for the output matching circuit 3 and a dual - frequency matching network can be realized. By controlling the spacing, depth, width and balance of the dual - frequency points, a better match can be achieved within the target frequency band. It is equivalent that the low - noise amplifier circuit 100 in the present invention can achieve better matching within the target frequency band without increasing the order of the input - output matching network on the premise of reducing its noise figure and achieving gain matching, and correspondingly, the cost and area of the low - noise amplifier circuit 100 will not be increased.

[0073] Embodiment Two

[0074] Different from Embodiment One, the path switching component 4 in this embodiment includes a first single - pole single - throw switch, a second single - pole single - throw switch, a third single - pole single - throw switch, a fourth single - pole single - throw switch and a fifth single - pole single - throw switch.

[0075] The control end of the first single - pole single - throw switch is connected to the first end of the first inductor L1, and the output end of the first single - pole single - throw switch is connected to the first end of the second inductor L2.

[0076] The control end of the second single - pole single - throw switch is connected to the second end of the fifth inductor L5, and the output end of the second single - pole single - throw switch is used to output the radio - frequency signal RFOUT output by the fifth inductor L5 outward.

[0077] The control end of the third single - pole single - throw switch is connected to the first end of the first inductor L1.

[0078] The control end of the fourth single - pole single - throw switch is connected to the output end of the third single - pole single - throw switch, and the output end of the fourth single - pole single - throw switch is grounded.

[0079] The control end of the fifth single-pole single-throw switch is connected to the output end of the third single-pole single-throw switch, and the output end of the fifth single-pole single-throw switch is used to output the radio frequency signal RFOUT.

[0080] Of course, the path switching component 4 in this embodiment can also be used in combination with the common-source and common-gate amplification structure 2 in the second embodiment.

[0081] When the low-noise amplifier circuit 100 in this embodiment works in the amplification mode, that is, when the radio frequency signal RFIN connected to the first inductor L1 is amplified and then output after signal amplification through the common-source and common-gate amplifier structure 2, the first single-pole single-throw switch, the second single-pole single-throw switch and the fourth single-pole single-throw switch are connected, and the third single-pole single-throw switch and the fifth single-pole single-throw switch are disconnected; when the low-noise amplifier circuit 100 works in the bypass mode, that is, when the radio frequency signal RFIN connected to the first inductor L1 is directly output, the first single-pole single-throw switch, the second single-pole single-throw switch and the fourth single-pole single-throw switch are disconnected, and the third single-pole single-throw switch and the fifth single-pole single-throw switch are connected.

[0082] Embodiment 3

[0083] This embodiment provides a radio frequency power amplifier module, which includes the low noise amplifier circuit 100 in embodiment 1. Of course, according to actual needs, the radio frequency power amplifier module can also use the low noise amplifier circuit 100 in embodiment 2.

[0084] Since the RF power amplifier module in this embodiment includes the low-noise amplifier circuit 100 in the first embodiment, it can also achieve the technical effect achieved by the low-noise amplifier circuit 100 in the first embodiment, which will not be described in detail here.

[0085] It should be noted that the various embodiments described above with reference to the accompanying drawings are only used to illustrate the present invention rather than to limit the scope of the present invention. Those skilled in the art should understand that any modification or equivalent substitution of the present invention without departing from the spirit and scope of the present invention should be included within the scope of the present invention. In addition, unless otherwise indicated by the context, words appearing in the singular include the plural form, and vice versa. In addition, unless otherwise specified, all or part of any embodiment may be used in combination with all or part of any other embodiment.

Claims

1. A low-noise amplification circuit, characterized in that, The low-noise amplification circuit includes an input matching circuit, a cascode amplification structure, an output matching circuit, and a path switching component; The input matching circuit includes a first inductor, a second inductor, a first capacitor, and a third inductor; The first end of the first inductor is used to access a radio frequency signal, and the second end of the first inductor is grounded; The first end of the second inductor is connected to the first end of the first inductor; The first end of the first capacitor is connected to the second end of the second inductor, and the second end of the first capacitor is connected to the grounded end of the cascode amplification structure; The first end of the third inductor is connected to the grounded end of the cascode amplification structure, and the second end of the third inductor is grounded; The input end of the cascode amplification structure is connected to the second end of the second inductor; The output matching circuit includes a fourth inductor, a second capacitor, a fifth inductor, a third capacitor, and a fourth capacitor; The first end of the fourth inductor is connected to the output end of the cascode amplification structure, and the second end of the fourth inductor is used to access a working voltage; The first end of the second capacitor is connected to the output end of the cascode amplification structure and serves as the second input end of the output matching circuit; The first end of the fifth inductor is connected to the second end of the second capacitor, and the second end of the fifth inductor is used to output a radio frequency signal; The first end of the third capacitor is used to access a working voltage, and the second end of the third capacitor is connected to the second end of the second capacitor; The first end of the fourth capacitor is connected to the first end of the third capacitor, and the second end of the fourth capacitor is connected to the second end of the fifth inductor; The path switching component is used to select the path of the low-noise amplification circuit, so that the radio frequency signal accessed by the first inductor is directly output or output after being amplified by the cascode amplification structure.

2. The low-noise amplification circuit according to claim 1, wherein The low-noise amplification circuit further includes a fifth capacitor; the first end of the fifth capacitor is connected to the second end of the second inductor, and the second end of the fifth capacitor is respectively connected to the first end of the first capacitor and the input end of the cascode amplification structure.

3. The low-noise amplification circuit according to claim 1, wherein The cascode amplification structure includes a first field-effect transistor and a second field-effect transistor; The gate of the first field-effect transistor serves as the input end of the cascode amplification structure, and the source of the first field-effect transistor serves as the grounded end of the cascode amplification structure; The gate of the second field-effect transistor is used to access a bias voltage, the source of the second field-effect transistor is connected to the drain of the first field-effect transistor, and the drain of the second field-effect transistor serves as the output end of the cascode amplification structure.

4. The low-noise amplifier circuit according to claim 1, wherein The path switching component includes a third field-effect transistor, a fourth field-effect transistor, a fifth field-effect transistor, a sixth field-effect transistor, and a seventh field-effect transistor; the gates of the third field-effect transistor, the fourth field-effect transistor, the fifth field-effect transistor, the sixth field-effect transistor, and the seventh field-effect transistor are respectively used to access control signals; One end of the drain and source of the third field effect transistor is connected to the first end of the first inductor, and the other end of the drain and source of the third field effect transistor is connected to the first end of the second inductor; One end of the drain and source of the fourth field effect transistor is connected to the first end of the fifth inductor, and the other end of the drain and source of the fourth field effect transistor is used to output the radio frequency signal output by the fifth inductor to the outside; One end of the drain and source of the fifth field effect transistor is connected to the first end of the first inductor; One end of the drain and source of the sixth field effect transistor is connected to the other end of the drain and source of the fifth field effect transistor, and the other end of the drain and source of the sixth field effect transistor is grounded; One end of the drain and source of the seventh field effect transistor is connected to the other end of the drain and source of the fifth field effect transistor, and the other end of the drain and source of the seventh field effect transistor is used to output a radio frequency signal.

5. The low-noise amplifier circuit according to claim 1, characterized in that The path switching component includes a first single-pole single-throw switch, a second single-pole single-throw switch, a third single-pole single-throw switch, a fourth single-pole single-throw switch, and a fifth single-pole single-throw switch; The control end of the first single-pole single-throw switch is connected to the first end of the first inductor, and the output end of the first single-pole single-throw switch is connected to the first end of the second inductor; The control end of the second single-pole single-throw switch is connected to the second end of the fifth inductor, and the output end of the second single-pole single-throw switch is used to output the radio frequency signal output by the fifth inductor to the outside; The control end of the third single-pole single-throw switch is connected to the first end of the first inductor; The control end of the fourth single-pole single-throw switch is connected to the output end of the third single-pole single-throw switch, and the output end of the fourth single-pole single-throw switch is grounded; The control end of the fifth single-pole single-throw switch is connected to the output end of the third single-pole single-throw switch, and the output end of the fifth single-pole single-throw switch is used to output a radio frequency signal.

6. A radio frequency power amplifier module, characterized in that, The radio frequency power amplifier module includes the low-noise amplification circuit according to any one of claims 1 to 5.

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