High-side intelligent electronic switches, chips, chip products, electromechanical equipment and methods

Abstract

This application provides a high-side intelligent electronic switch, comprising: a power supply terminal, a power ground terminal, a load output terminal, and a switch control module; a power switch, with its first terminal connected to the power supply terminal, its second terminal connected to the load output terminal, and its control terminal connected to the switch control module, the switch control module being used to control the power switch to turn on or off; and a reverse judgment module, used to determine whether the voltage at the load output terminal is greater than the voltage at the power supply terminal; wherein, the reverse judgment module is connected to the switch control module, and when the reverse judgment module determines that the voltage at the load output terminal is greater than the voltage at the power supply terminal, the switch control module, based on the signal from the reverse judgment module, controls the node associated with the parasitic current at the power supply terminal to disconnect to block the flow of parasitic current, so that the power switch can turn on. Embodiments of this application also provide a chip, a chip product, electromechanical equipment, and a method.

Description

Technical Field

[0001] This application relates to the field of intelligent semiconductor switches, and more particularly to a high-side intelligent electronic switch, chip, chip product, electromechanical equipment, and method. Background Technology

[0002] High-side intelligent electronic switches are typically used to couple loads to batteries and are electronic components that control the continuity of load circuits. High-side intelligent electronic switches also possess one or more diagnostic capabilities and protection features, such as protection against over-temperature, overload, overcurrent, and short-circuit events. For example, intelligent electronic switches include a power switch that trips in the event of over-temperature, overload, overcurrent, or short-circuit events, disconnecting the battery from the load. Intelligent electronic switches are widely used in automotive electronics, industrial automation, medical devices, and other fields.

[0003] The high-side intelligent electronic switch includes a power supply terminal, a load output terminal, a power switch, and a switch control module. The first terminal of the power switch is connected to the positive terminal of the power supply via the power supply terminal. The second terminal of the power switch is connected to one end of the load via the load output terminal, and the other end of the load is connected to the negative terminal of the power supply. The switch control module controls whether the power switch is turned on. In this circuit structure, when the voltage at the load output terminal is greater than the voltage at the power supply terminal, the parasitic transistor in the switch control module may become on. When it is necessary to turn on the power switch for various reasons, such as reducing losses caused by reverse current, the power switch may not be controllable, meaning its on / off state is uncontrollable. Summary of the Invention

[0004] The technical problem to be solved by the embodiments of this application is to provide a high-side intelligent electronic switch, chip, chip product, electromechanical device, and method to address the shortcomings of the prior art, thereby achieving controlled conduction of the power switch.

[0005] To address the aforementioned technical problems, a first aspect of this application provides a high-side intelligent electronic switch, comprising:

[0006] The system includes a power supply terminal, a power ground terminal, a load output terminal, and a switch control module. The power supply terminal is used to connect to the positive terminal of the power supply, the power ground terminal is used to connect to the negative terminal of the power supply, and the load output terminal is used to connect to the load.

[0007] A power switch, with its first terminal connected to the power supply terminal, its second terminal connected to the load output terminal, and its control terminal connected to a switch control module, wherein the switch control module is used to control the power switch to turn on or off.

[0008] The reverse judgment module is used to determine whether the voltage at the load output terminal is greater than the voltage at the power supply terminal.

[0009] The reverse judgment module is connected to the switch control module. When the reverse judgment module determines that the voltage at the load output terminal is greater than the voltage at the power supply terminal, the switch control module controls the node associated with the parasitic current at the power supply terminal to disconnect based on the signal from the reverse judgment module, thereby blocking the flow of parasitic current and enabling the power switch to turn on.

[0010] Optionally, the switch control module includes a blocking switch, the control terminal of which is controlled by a reverse judgment module. When the reverse judgment module determines that the voltage at the load output terminal is greater than the voltage at the power supply terminal, the blocking switch is disconnected and cut off. When the reverse judgment module determines that the voltage at the load output terminal is not greater than the voltage at the power supply terminal, the blocking switch is turned on and turned on.

[0011] Optionally, the switch control module includes an on switch, an off switch, and a logic control unit, wherein the first end of the on switch is connected to the boost unit, the second end of the on switch is connected to the control terminal of the power switch, the first end of the off switch is connected to the control terminal of the power switch, the second end of the off switch is connected to the load output terminal, and the control terminals of the on switch and the off switch are both connected to the logic control unit.

[0012] The nodes associated with the parasitic current include the n-type buried layer itself or its ends, the on switch and the off switch are located within the n-type buried layer, and the n-type buried layer is located within the p-type substrate.

[0013] Optionally, the blocking switch is located within the n-type buried layer.

[0014] Optionally, the blocking switch is a MOSFET, a transistor, or a junction FET.

[0015] Optionally, the reverse judgment module includes a voltage comparator, the first terminal of which is connected to the load output terminal, the second terminal of which is connected to the power supply terminal, and the output terminal of which is coupled to the control terminal of the blocking switch. The voltage comparator determines whether the difference between the voltage at the load output terminal and the voltage at the power supply terminal is greater than a reference voltage, wherein the reference voltage is less than the turn-on threshold of the first parasitic transistor.

[0016] Optionally, the reverse judgment module includes a voltage comparator, the first terminal of which is connected to the load output terminal, the second terminal of which is connected to the power supply terminal, and the output terminal of which is coupled to the control terminal of the blocking switch. The voltage comparator determines whether the difference between the voltage at the load output terminal and the voltage at the power supply terminal is greater than a reference voltage, wherein the reference voltage is less than the turn-on threshold of the first parasitic transistor.

[0017] Optionally, the reference voltage ranges from 10mV to 100mV.

[0018] Optionally, when the difference between the voltage at the load output terminal and the voltage at the power supply terminal is greater than a reference voltage, the reverse judgment module determines that the voltage at the load output terminal is greater than the voltage at the power supply terminal, wherein the reference voltage is greater than 0; or,

[0019] When the voltage at the load output terminal minus the voltage at the power supply terminal is greater than or equal to the turn-on threshold of the parasitic diode of the power switch, the reverse judgment module determines that the voltage at the load output terminal is greater than the voltage at the power supply terminal.

[0020] A second aspect of this application provides an integrated circuit chip including the aforementioned high-side intelligent electronic switch, wherein the power supply terminal is a power supply pin, the power ground terminal is a power ground pin, and the load output terminal is a load output pin.

[0021] Optionally, the power switch is a MOSFET, and the three terminals of the MOSFET in the intelligent electronic switch are located in the same plane.

[0022] A third aspect of this application provides a chip product including the aforementioned high-side intelligent electronic switch, wherein the components of the high-side intelligent electronic switch other than the power switch are located on a first integrated circuit chip, and the power switch is located on a second integrated circuit chip;

[0023] Wherein, the power supply terminal is a power supply pin, the power ground terminal is a power ground pin, the load output terminal is a load output pin, the first integrated circuit chip includes the power supply pin and the power ground pin, and the second integrated circuit chip includes the load output pin.

[0024] Optionally, the three terminals of the MOS transistor in the first integrated circuit chip are located in the same plane.

[0025] The fourth aspect of this application provides an electromechanical device, including the above-described high-side intelligent electronic switch or the above-described integrated circuit chip or the above-described chip product;

[0026] It also includes a power supply, a load, and a microprocessor, wherein the positive terminal of the power supply is connected to the power supply terminal, the negative terminal of the power supply is connected to the power supply ground terminal, one end of the load is connected to the load output terminal, the other end of the load is connected to the power supply ground terminal, and the microprocessor is connected to the intelligent electronic switch.

[0027] Optionally, the electromechanical equipment includes a vehicle.

[0028] A fifth aspect of this application provides a control method for a high-side intelligent electronic switch, comprising:

[0029] Determine whether the voltage at the load output terminal is greater than the voltage at the power supply terminal;

[0030] If the determination result is yes, the node associated with the parasitic current at the power supply terminal is disconnected to block the flow of parasitic current, so that the power switch can be turned on and turned on.

[0031] If the judgment result is negative, the node associated with the power supply terminal and the parasitic current is turned on and connected.

[0032] In this embodiment, a reverse judgment module is added. The reverse judgment module works in conjunction with the switch control module. When the reverse judgment module determines that the voltage at the load output terminal is greater than the voltage at the power supply terminal, the switch control module, based on the signal from the reverse judgment module, controls the node associated with the parasitic current at the power supply terminal to disconnect. As a result, the parasitic transistor in the switch control module will not be continuously turned on, and the parasitic current path between the control terminal of the power switch and the power supply terminal is disconnected. The parasitic current path between the control terminal of the power switch and the power supply ground terminal is also disconnected. Therefore, when the power switch needs to be turned on when the voltage at the load output terminal is greater than the voltage at the power supply terminal, the voltage at the control terminal of the power switch will not be continuously pulled down due to the presence of the parasitic transistor. Thus, the power switch can be reliably controlled to turn on. The turning on of the power switch is controlled by the switch control module. Attached Figure Description

[0033] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0034] Figure 1 This is a circuit block diagram of an electromechanical device according to an embodiment of this application;

[0035] Figure 2a This is a circuit module diagram of a high-side intelligent electronic switch based on related technologies;

[0036] Figure 2b This is a partial cross-sectional view of the film layers of a high-side intelligent electronic switch related to the technology.

[0037] Figure 3a This is a circuit block diagram of a high-side intelligent electronic switch according to an embodiment of this application;

[0038] Figure 3bThis is a partial sectional view of the film layer of a high-side intelligent electronic switch according to an embodiment of this application;

[0039] Figure 4 This is a schematic diagram showing the connection between the reverse judgment module and the blocking switch according to an embodiment of this application;

[0040] Figure 5 This is a flowchart of a control method for a high-side intelligent electronic switch according to an embodiment of this application. Detailed Implementation

[0041] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0042] The terms "comprising" and "having," and any variations thereof, appearing in this application specification, claims, and drawings, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or modules is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or devices. Furthermore, the terms "first," "second," and "third," etc., are used to distinguish different objects and are not used to describe a specific order. Connections in this application include direct connections and indirect connections. An indirect connection refers to the presence of other electronic components, pins, etc., between the two connected components. The term "XX terminal" mentioned in this application may or may not be an actual terminal, such as simply one end of a component or one end of a wire. The term "and / or includes three cases" mentioned in this application, such as A and / or B, includes A, B, and A and B.

[0043] This application provides an embodiment of an electromechanical device, such as an automobile, medical device, industrial automation equipment, aerospace equipment, etc. Please refer to [link to relevant documentation]. Figure 1The electromechanical equipment includes a power supply 110, a load 120, a microprocessor 300, and a high-side intelligent electronic switch 200. The power supply 110 is generally a battery, typically a rechargeable battery, providing voltages of 12V, 24V, 36V, 48V, 60V, etc., but can also be other types of batteries or power supplies, such as AC / DC (alternating current / direct current) converters or DC / DC (direct current / direct current) converters. The load 120 includes at least one of resistive, inductive, and capacitive loads. Resistive loads include, for example, seat adjustment devices, auxiliary heating devices, window heating devices, light-emitting diodes (LEDs), rear lighting, or other resistive loads. Inductive loads include, for example, pumps, actuators, motors, anti-lock braking systems (ABS), electronic braking systems (EBS), fans, or other systems that include inductive loads for one or more wiper systems. Capacitive loads include, for example, lighting elements such as xenon arc lamps. In the diagram, load 120 is shown as a single element for illustration only. Load 120 is typically a more complex load, such as a module or subsystem with numerous components. Microprocessor 300 is connected to intelligent electronic switch 200 to control the high-side intelligent electronic switch 200. Simultaneously, the high-side intelligent electronic switch 200 feeds back its status and relevant parameter information to microprocessor 300, such as diagnostic parameters, current parameters, and voltage parameters, for processing by microprocessor 300.

[0044] In this embodiment, the high-side intelligent electronic switch 200 includes a power supply terminal VCC, a power ground terminal GND, and a load output terminal OUT. The power supply terminal VCC is connected to the positive terminal of power supply 110, the power ground terminal GND is connected to the negative terminal of power supply 110, and the load output terminal OUT is connected to one end of load 120, while the other end of load 120 is connected to the negative terminal of power supply 110. Additionally, in other embodiments of this application, a reverse connection protection diode and a current-limiting resistor connected in parallel may be provided between the power ground terminal GND and the negative terminal of power supply 110.

[0045] In this embodiment, the high-side intelligent electronic switch 200 further includes a power switch M1 and a switch control module 220. One end of the power switch M1 is connected in series with the load 120 via the load output terminal OUT, and the other end is connected to the power supply terminal VCC. Its control terminal is connected to the switch control module 220, which is used to control whether the power switch M1 is turned on. In this embodiment, the power switch M1 is an NMOS transistor, PMOS transistor, junction FET, or IGBT, etc. The illustration uses an NMOS transistor as an example. The power switch M1 can be implemented as a silicon device, or it can be implemented using other semiconductor materials, such as silicon carbide (SiC), gallium arsenide (GaAs), or gallium nitride (GaN). In this embodiment, the power switch M1 is connected as a high-side switch, which is a switch connected between the power supply terminal VCC and the load 120.

[0046] Please refer to the above. Figure 1 , Figure 2a and Figure 2b In related technologies, the switch control module 220 includes an on switch M2, an off switch M3, and a logic control unit 222. The first terminal of the on switch M2 is directly or indirectly connected to the boost unit 221, and the second terminal of the on switch M2 is connected to the control terminal of the power switch M1. The control terminal of the on switch M2 is connected to the logic control unit 222. The first terminal of the off switch M3 is connected to the control terminal of the power switch M1, and the second terminal of the off switch M3 is directly or indirectly connected to the load output terminal OUT. The control terminal of the off switch M3 is connected to the logic control unit 222. The on switch M2 and the off switch M3 constitute a so-called totem pole drive circuit. Generally speaking, the on switch M2 is a PMOS transistor, the off switch M3 is an NMOS transistor, and the boost unit 221 is connected to the power supply terminal VCC. The boost unit 221 is a charge pump or other boost element, and the output voltage of the boost unit 221 is greater than the voltage of the power supply terminal VCC.

[0047] In the above structure, when the voltage at the load output terminal OUT exceeds the voltage supplied by power supply 110 for some reason, such as reverse connection of power supply 110 or the effect of inductance when power switch M1 is off, it may be desirable for the power switch to turn on. For example, due to the presence of a parasitic diode in power switch M1, even when power switch M1 is off, reverse current may still occur from the load output terminal OUT to the power supply terminal VCC. When reverse current occurs, it may be desirable for power switch M1 to turn on in certain situations, such as reducing the heat generated by the reverse current flowing in the parasitic diode in power switch M1, thereby improving the reliability of the high-side intelligent electronic switch 200. However, since there is a parasitic transistor in the off switch M3, when the voltage at the load output terminal OUT exceeds the voltage supplied by power supply 110, the parasitic transistor may turn on, which may prevent power switch M1 from turning on effectively.

[0048] Specifically, please refer to [reference needed]. Figure 2a and Figure 2b , Figure 2b The diagram illustrates a cross-sectional view of the on switch M2, off switch M3, and power switch M1. The intelligent electronic switch 200 includes a p-type substrate 411, on which a first n-type buried layer 412 (NBL) is formed. The on switch M2 and off switch M3, i.e., the PMOS and NMOS transistors shown in the diagram, are formed within the first n-type buried layer 412. Specifically, a deep p-well 413 is formed within the first n-type buried layer 412, and then a first n-well 414 and a first p-well 415 are formed within the deep p-well 413. A first n+ doped region, a first -p+ doped region, and a first -p+ doped region are formed within the first n-well 414. The first p-well 415 contains three doped regions: a second n+ doped region, a second doped region of two n+, and a second p+ doped region. The first p+ doped region (source) is coupled to the boost unit 221, and the first doped region of two p+ (drain) is connected to the control terminal of the power switch M1. The first n-well 414 is connected to the boost unit 221 via the first n+ doped region. The second n+ doped region (source) is connected to the load output terminal OUT, and the second doped region of two n+ (drain) is connected to the control terminal of the power switch M1. The second p+ doped region is connected to the load output terminal OUT, and the first p-well 415 is connected to the load output terminal OUT via the second p+ doped region. In the diagram, a PMOS transistor is formed in the first n-well 414, an NMOS transistor is formed in the first p-well 415, the first n-type buried layer 412 is connected to the power supply terminal VCC, and the p-type substrate 411 is connected to the power ground terminal GND. Figure 2bIn the structure, the NMOS transistor has a first parasitic transistor 223 (shown by dashed lines in the figure) formed by a second n+ doped region, a first p-well 415, a deep p-well 413, and a first n-type buried layer 412, and a second parasitic transistor 224 (shown by dashed lines in the figure) formed by the first p-well 415, the deep p-well 413, the first n-type buried layer 412, and a p-type substrate 411. The first parasitic transistor 223 is an npn type transistor, and the second parasitic transistor 224 is a pnp type transistor. The base of the first parasitic transistor 223 is connected to the load output terminal OUT, the emitter of the first parasitic transistor 223 is connected to the power supply terminal VCC, and the collector of the first parasitic transistor 223 is connected to the control terminal of the power switch M1. The base of the second parasitic transistor 224 is connected to the power supply terminal VCC, the emitter of the second parasitic transistor 224 is connected to the load output terminal OUT, and the collector of the second parasitic transistor 224 is connected to the power ground terminal GND. When the voltage at the load output terminal OUT is greater than the voltage at the power supply terminal VCC, especially when the difference between the voltage at the load output terminal OUT and the voltage at the power supply terminal VCC is greater than or equal to the turn-on threshold of the first parasitic transistor 223, the turn-on threshold of the second parasitic transistor 224 is the same as that of the first parasitic transistor 223. This may cause both the first parasitic transistor 223 and the second parasitic transistor 224 to conduct. In this case, when it is necessary to turn on the power switch M1, the logic control unit 222 will control the on switch M2 to turn on and the off switch M3 to turn off. However, since both the first parasitic transistor 223 and the second parasitic transistor 224 may be continuously conducting, they will pull down the voltage at the control terminal of the power switch M1, which may prevent the power switch M1 from turning on, which is undesirable.

[0049] To address the aforementioned issues, in this embodiment, please refer to [reference needed]. Figure 1 and Figure 3a , Figure 3bThe high-side intelligent electronic switch 200 also includes a reverse judgment module 230, which is used to determine whether the voltage at the load output terminal OUT is greater than the voltage at the power supply terminal VCC. In this embodiment, the reverse judgment module 230 determines whether the voltage at the load output terminal OUT is greater than the voltage at the power supply terminal VCC in two scenarios: First, the first parasitic transistor 223 is turned on, meaning the difference between the voltage at the load output terminal OUT and the voltage at the power supply terminal VCC is greater than or equal to the turn-on threshold of the first parasitic transistor. In this scenario, there may be a reverse current flowing from the load output terminal OUT to the power supply terminal VCC. Second, the voltage at the load output terminal OUT is greater than the voltage at the power supply terminal VCC, and the difference between the voltage at the load output terminal OUT and the voltage at the power supply terminal VCC is less than the turn-on threshold of the first parasitic transistor 223. In this case, the first parasitic transistor is not yet turned on. How these two scenarios are determined will be described in detail later.

[0050] In this embodiment, the reverse judgment module 230 is connected to the switch control module 220. When the reverse judgment module 230 determines that the voltage at the load output terminal OUT is greater than the voltage at the power supply terminal VCC, the reverse judgment module 230 outputs a control signal to the switch control module 220. The switch control module 220 controls the node associated with the parasitic current at the power supply terminal VCC to disconnect to block the flow of parasitic current, so that the power switch M1 can be turned on and conducted as needed under the control of the logic control unit 222.

[0051] Specifically, in this embodiment, the switch control module 220 includes a blocking switch M5. The first end of the blocking switch M5 is connected to the node associated with the parasitic current, and the second end of the blocking switch M5 is connected to the power supply terminal VCC. The control terminal of the blocking switch M5 is connected to the reverse judgment module 230, which controls whether the blocking switch M5 is on. When the reverse judgment module 230 determines that the voltage at the load output terminal OUT is greater than the voltage at the power supply terminal VCC, the reverse judgment module 230 controls the blocking switch M5 to open and cut off. At this time, the node associated with the parasitic current is not connected to the power supply terminal VCC. When the reverse judgment module 230 determines that the voltage at the load output terminal OUT is not greater than the voltage at the power supply terminal VCC, the reverse judgment module 230 controls the blocking switch M5 to open and conduct. This is the default situation. At this time, the node associated with the parasitic current is connected to the power supply terminal VCC, and the voltage of the node associated with the parasitic current is the same as the voltage of the power supply terminal VCC.

[0052] In this embodiment, parasitic current refers to the current formed due to the conduction of the first parasitic transistor 223 and the second parasitic transistor 224, flowing from the control terminal of the power switch M1 to the power supply terminal VCC, and from the control terminal of the power switch M1 to the power ground terminal GND. The node associated with the parasitic current is the emitter of the first parasitic transistor 223, which is also the base of the second parasitic transistor 224. Therefore, when the blocking switch M5 is open, the path between the emitter of the first parasitic transistor 223 and the power supply terminal VCC is broken, and the path between the base of the second parasitic transistor 224 and the power supply terminal VCC is also broken. When the blocking switch M5 is controlled to open, the path between the emitter of the first parasitic transistor 223 and the power supply terminal VCC is opened, and the path between the base of the second parasitic transistor 224 and the power supply terminal VCC is opened. In this embodiment, the emitter of the first parasitic transistor 223 is the first n-type buried layer 412, and the base of the second parasitic transistor 224 is the first n-type buried layer 412. The node associated with the parasitic current is the first n-type buried layer 412 itself or its end. In this embodiment, the blocking switch M5 is a MOS transistor, such as an NMOS transistor or a PMOS transistor. The illustration uses a PMOS transistor as an example. In other embodiments of this application, the blocking switch M5 can also be a transistor, a junction FET, etc.

[0053] In this embodiment, when it is determined that the voltage at the load output terminal OUT is greater than the voltage at the power supply terminal VCC, the reverse judgment module 230 controls the blocking switch M5 to open and shut down, and the node associated with the parasitic current may float. When it is necessary to turn on the power switch M1, the logic control unit 222 controls the conduction switch M2 to open and the shutdown switch M3 to close. Assuming that the voltage of the node associated with the parasitic current is lower than the voltage at the load output terminal OUT by one or more opening thresholds, the first parasitic transistor 223 and the second parasitic transistor 224 will briefly conduct, and the voltage of the node associated with the parasitic current will be pulled up. As the voltage of the node associated with the parasitic current is pulled up, when the result of the voltage at the load output terminal OUT minus the voltage of the node associated with the parasitic current is less than the opening threshold, the first parasitic transistor 223 and the second parasitic transistor 224 will turn off and remain off. After that, the voltage at the control terminal of the power switch M1 can rise steadily to realize the opening of the power switch M1.

[0054] This embodiment includes a reverse judgment module 230, which works in conjunction with the switch control module 220. When the reverse judgment module 230 determines that the voltage at the load output terminal OUT is greater than the voltage at the power supply terminal VCC, the switch control module 220, based on the signal from the reverse judgment module 230, controls the node associated with the parasitic current at the power supply terminal VCC to disconnect. As a result, the first parasitic transistor 223 and the second parasitic transistor 224 will not be continuously turned on, and the parasitic current path between the control terminal of the power switch M1 and the power supply terminal VCC is disconnected. The parasitic current path between the control terminal of the power switch M1 and the power ground terminal GND is also disconnected. Therefore, when the voltage at the load output terminal OUT is greater than the voltage at the power supply terminal VCC and the power switch M1 needs to be turned on, the voltage at the control terminal of the power switch M1 will not be continuously pulled down due to the presence of the first parasitic transistor 223 and the second parasitic transistor 224. Thus, the power switch M1 can be reliably controlled to turn on. Furthermore, when the voltage at the load output terminal OUT is not greater than the voltage at the power supply terminal VCC, the node associated with the parasitic current remains connected to the power supply terminal VCC, thus not affecting the normal operation of the switch control module 220.

[0055] To determine whether the voltage at the load output terminal OUT is greater than the voltage at the power supply terminal VCC, this embodiment uses the second scenario for judgment. In other embodiments of this embodiment, the first scenario can also be used for judgment. In this case, the reverse judgment module 230 includes a comparison unit, such as a voltage comparator or a current comparator. The voltage comparator is used to determine whether the difference between the voltage at the load output terminal OUT and the voltage at the power supply terminal VCC is greater than a reference voltage. In this case, the reference voltage is greater than or equal to the turn-on threshold. The current comparator is used to determine whether the reverse current from the load output terminal OUT to the power supply terminal is greater than 0.

[0056] In this embodiment, please refer to [reference needed]. Figure 3a and Figure 4In the second scenario, the reverse judgment module 230 includes a voltage comparator 231. The first terminal of the voltage comparator 231 is connected to a reference voltage Vref2, and the other terminal of Vref2 is connected to the load output terminal OUT. The reference voltage Vref2 is, for example, 10mV-100mV, and will be less than the turn-on threshold of the first parasitic diode 223. The second terminal of the voltage comparator 231 is connected to the power supply terminal VCC, and the output terminal of the voltage comparator 231 is coupled to the control terminal of the blocking switch M5. Alternatively, in other embodiments of this application, the reference voltage can also be connected between the power supply terminal and the second terminal of the voltage comparator. Under normal circumstances, the voltage at the load output terminal OUT will not exceed the voltage at the power supply terminal VCC. The voltage comparator 231 is used to determine whether the result of subtracting the voltage of the power supply terminal VCC from the voltage of the load output terminal OUT is greater than the reference voltage Vref2. When it is greater than the reference voltage Vref2, the first parasitic transistor 223 and the second parasitic transistor 224 are not yet turned on. In order to quickly respond to the need to turn on the power switch, the reverse judgment module 230 controls the blocking switch M5 to open and cut off in advance, so that the power switch M1 can respond quickly when it needs to be turned on, reducing the time for the power switch M1 to turn on. In this embodiment, the reference voltage Vref2 is greater than 0, preferably greater than or equal to 10mV and less than or equal to 100mV. The purpose of a reference voltage Vref2 greater than or equal to 10mV is to reduce false triggering under normal conditions due to signal interference, while also reducing the accuracy requirements of the device and lowering costs. The purpose of a reference voltage Vref2 less than or equal to 100mV is to prevent the turn-on threshold of the first parasitic transistor 223 from decreasing due to the increase in temperature of the high-side intelligent electronic switch. In this embodiment, 100mV ensures that the temperature within the high-side intelligent electronic switch's datasheet meets the requirement of being less than the turn-on threshold of the first parasitic transistor 223, ensuring that the first parasitic transistor 223 can control the shutdown switch M5 before it is turned on. In this embodiment, the reference voltage Vref2 is, for example, 10mV, 20mV, 30mV, 40mV, 50mV, 60mV, 70mV, 80mV, 90mV, 100mV, etc.

[0057] In this embodiment, by setting the reference voltage to be less than the turn-on threshold of the first parasitic diode 223 and less than the minimum turn-on threshold due to factors such as temperature and process consistency, the blocking switch M5 can be set to open and off as quickly as possible even due to signal processing and transmission delays. When the power switch M1 needs to be turned on, since the blocking switch M5 has been turned off or can be turned off soon, the impact of the brief conduction of the first parasitic transistor 223 and the second parasitic transistor 224 on the turn-on time of the power switch can be reduced, thus improving the response speed.

[0058] In other embodiments of this application, the first scenario can also be used for judgment. In this case, the reference voltage must be greater than or equal to the turn-on threshold of the first parasitic transistor 223, for example, the reference voltage must be greater than or equal to 0.3V. In this case, the blocking switch M5 is controlled to turn off only on the premise that the first parasitic transistor 223 can be turned on. When the power switch M1 needs to be turned on, the power switch M1 can also be turned on. However, the response may not be so fast, and there may be some minor problems. For example, since the turn-on threshold of the first parasitic transistor 223 varies with temperature, process technology, etc., when the temperature of the smart electronic switch is high, the turn-on threshold will decrease. In some cases, the first parasitic transistor 223 may be turned on, but the voltage comparator 231 still judges that the result of the voltage of the load output terminal OUT minus the voltage of the power supply terminal VCC is less than the reference voltage Vref2. This situation needs to be avoided. In other embodiments of this application, a current comparator can be used to determine whether the voltage at the load output terminal is greater than the voltage at the power supply terminal. When the voltage at the load output terminal OUT minus the voltage at the power supply terminal VCC is greater than the turn-on threshold, the parasitic diode of the power switch will be turned on, resulting in a reverse current from the load output terminal OUT to the power supply terminal VCC. When the current comparator determines that the reverse current is greater than 0, the reverse judgment module determines whether the voltage at the load output terminal is greater than the voltage at the power supply terminal.

[0059] In this application, when the reverse judgment module 230 determines that the voltage of the load output terminal OUT is greater than the voltage of the power supply terminal VCC, it controls the blocking switch M5 to open and close. In actual application, the specific value of the reference voltage Vref2 can be set as needed, and the reference voltage Vref2 is greater than 0.

[0060] Please continue to refer to the above. Figure 3a and Figure 3bIn this embodiment, the intelligent electronic switch is fabricated on the same integrated circuit chip. The intelligent electronic switch 200 is fabricated using planar BCD (Bipolar-CMOS-DMOS) technology. At this time, the three terminals of the power switch M1 and other MOS transistors are located on the same plane, which are the source, drain and control terminals. Specifically, a second n-type buried layer 416 (NBL) is formed on the p-type substrate 411. An N-doped layer 417 and a P-doped layer 418 are formed within the second n-type buried layer 416. A third n+ doped region (drain) is formed in the N-doped layer 417, and a third n+ doped region (source) and a third p+ doped region are formed within the P-doped layer 418. A control terminal is then formed on top of this. The third n+ doped region (source) is connected to the load output terminal OUT, the third n+ doped region (drain) is connected to the power supply terminal VCC, and the third p+ doped region is connected to the load output terminal OUT. The second n-type buried layer 416 is connected to the power supply terminal VCC. The power switch M1 here is a simplified model and not all film layers are shown. The formation of the power switch M1 is a technique in the art and will not be described in detail here.

[0061] In this embodiment, the blocking switch M5 is a PMOS transistor, and it is also located in the first n-type buried layer 412. Specifically, a fourth n-well 419 is formed in the first n-type buried layer 412. The fourth n-well 419 contains a fourth n+ doped region, a fourth one-p+ doped region, and a fourth two-p+ doped region. The fourth one-p+ doped region (drain) is coupled to the power supply terminal VCC, and the fourth two-p+ doped region (source) is connected to the first n-type buried layer 412. The fourth n-well 419 is connected to the first n-type buried layer 412 via the fourth n+ doped region. The control terminal of the blocking switch M5 is located above the fourth n-well 419 and is connected to the reverse detection module 230. In this embodiment, the first n-type buried layer 412 and the second n-type buried layer 416 provide electrical isolation.

[0062] This application embodiment also provides an integrated circuit chip, which includes the aforementioned high-side intelligent electronic switch 200, i.e., the aforementioned intelligent electronic switch 200 is fabricated on the same semiconductor substrate. The power supply terminal VCC is the power supply pin, the power ground terminal GND is the power ground pin, and the load output terminal OUT is the load output pin. At this time, the turn-on threshold of the first parasitic transistor is equal to the turn-on threshold of the parasitic diode of the power switch. When the power switch is off and there is a reverse current flowing from the load output terminal to the power supply terminal, the voltage at the load output terminal OUT minus the voltage at the power supply terminal VCC will be greater than or equal to the turn-on threshold of the parasitic diode of the power switch, i.e., greater than or equal to the turn-on threshold of the first parasitic transistor 223.

[0063] Other embodiments of this application also provide a chip product, which includes the aforementioned high-side intelligent electronic switch 200. The components of the intelligent electronic switch 200, except for the power switch M1, are located on a first integrated circuit chip, and the power switch M1 is located on a second integrated circuit chip. That is, the first integrated circuit chip is fabricated on one semiconductor substrate, and the second integrated circuit chip is fabricated on another semiconductor substrate. The power supply terminal VCC is the power supply pin, the power ground terminal GND is the power ground pin, and the load output terminal OUT is the load output pin. The first integrated circuit chip includes a power supply pin and a power ground pin, and the second integrated circuit chip includes a power supply pin and a load output pin; that is, the power supply pin is present on both the first and second integrated circuit chips. Other pins can be added to the first and second integrated circuit chips as needed. Here, the first and second integrated circuit chips are packaged into a single product. Here, the power switch in the second integrated circuit chip can be a VDMOS (Vertical Double-diffused Metal-Oxide-Semiconductor) or an LDMOS (Lateral Double-diffused MOSFET), etc., and is not limited here.

[0064] In addition, in other embodiments of this application, the intelligent electronic switch 200, integrated circuit chip, and chip product of this embodiment are not limited to use in automotive electronics, but can also be used in industrial automation, aerospace and other fields.

[0065] Figure 5 This is a flowchart corresponding to the method in the above embodiment. Figure 5 The method can be referred to the previous ones. Figure 1 , Figures 3a-4 The implementation of the high-side intelligent electronic switch 200 is discussed, but not limited to. Nevertheless, for ease of explanation, the description... Figure 5 When using this method, refer to Figure 1 , Figures 3a-4 Here, the control method for the high-side intelligent electronic switch 200 includes:

[0066] S110: Control power switch M1 to open and close;

[0067] S120: Determine whether the voltage at the load output terminal is greater than the voltage at the power supply terminal;

[0068] S131: If the judgment result is yes, the node associated with the parasitic current at the power supply terminal VCC is disconnected to block the flow of parasitic current, so that the power switch M1 can be turned on.

[0069] S132: If the judgment result is negative, control the node associated with the parasitic current at the power supply terminal VCC to turn on and conduct.

[0070] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional units and modules is merely an example. In practical applications, the above functions can be assigned to different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiments can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit. Furthermore, the specific names of the functional units and modules are only for easy differentiation and are not intended to limit the scope of protection of this application. The specific working process of the units and modules in the above system can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0071] It should be understood that "a plurality of" as used herein refers to two or more. Other embodiments of this application will readily occur to those skilled in the art upon consideration of the specification and practice of the application disclosed herein. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this application are indicated by the following claims.

[0072] It should be noted that the various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the apparatus embodiments, since they are basically similar to the method embodiments, the description is relatively simple; relevant parts can be referred to the descriptions in the method embodiments.

[0073] The above-disclosed embodiments are merely preferred embodiments of this application and should not be construed as limiting the scope of this application. Therefore, any equivalent variations made in accordance with the claims of this application shall still fall within the scope of this application.

Claims

1. A high-side intelligent electronic switch, characterized in that, include: The system includes a power supply terminal, a power ground terminal, a load output terminal, and a switch control module. The power supply terminal is used to connect to the positive terminal of the power supply, the power ground terminal is used to connect to the negative terminal of the power supply, and the load output terminal is used to connect to the load. A power switch, with its first terminal connected to the power supply terminal, its second terminal connected to the load output terminal, and its control terminal connected to a switch control module, wherein the switch control module is used to control the power switch to turn on or off. The reverse judgment module is used to determine whether the voltage at the load output terminal is greater than the voltage at the power supply terminal. The reverse judgment module is connected to the switch control module. When the reverse judgment module determines that the voltage at the load output terminal is greater than the voltage at the power supply terminal, the switch control module controls the node associated with the parasitic current at the power supply terminal to disconnect based on the signal from the reverse judgment module, so as to block the flow of parasitic current and enable the power switch to turn on. The switch control module includes a shutdown switch, and the smart electronic switch includes a p-type substrate, a first n-type buried layer formed on the p-type substrate, a deep p-well formed in the first n-type buried layer, and a shutdown switch formed on the deep p-well. The shutdown switch is connected to the load output terminal and the control terminal of the power switch, respectively. The nodes associated with the parasitic current include the n-type buried layer itself or its ends.

2. The high-side intelligent electronic switch according to claim 1, characterized in that, The switch control module includes a blocking switch. The control terminal of the blocking switch is controlled by a reverse judgment module. When the reverse judgment module determines that the voltage at the load output terminal is greater than the voltage at the power supply terminal, the blocking switch is disconnected and cut off. When the reverse judgment module determines that the voltage at the load output terminal is not greater than the voltage at the power supply terminal, the blocking switch is turned on and turned on.

3. The high-side intelligent electronic switch according to claim 2, characterized in that, The switch control module includes an on switch, an off switch, and a logic control unit. The first end of the on switch is connected to the boost unit, the second end of the on switch is connected to the control terminal of the power switch, the first end of the off switch is connected to the control terminal of the power switch, the second end of the off switch is connected to the load output terminal, and the control terminals of the on switch and the off switch are both connected to the logic control unit. The nodes associated with the parasitic current include the n-type buried layer itself or its ends, the on switch and the off switch are located within the n-type buried layer, and the n-type buried layer is located within the p-type substrate.

4. The high-side intelligent electronic switch according to claim 3, characterized in that, The blocking switch is located within the n-type buried layer.

5. The high-side intelligent electronic switch according to claim 2, characterized in that, The blocking switch is a MOSFET, a bipolar transistor, or a junction FET.

6. The high-side intelligent electronic switch according to claim 2, characterized in that, The reverse judgment module includes a voltage comparator. The first terminal of the voltage comparator is connected to the load output terminal, and the second terminal of the voltage comparator is connected to the power supply terminal. The output terminal of the voltage comparator is coupled to the control terminal of the blocking switch. The voltage comparator determines whether the difference between the voltage at the load output terminal and the voltage at the power supply terminal is greater than a reference voltage, wherein the reference voltage is less than the turn-on threshold of the first parasitic transistor.

7. The high-side intelligent electronic switch according to claim 6, characterized in that, The reference voltage range is 10mV-100mV.

8. The high-side intelligent electronic switch according to any one of claims 1-5, characterized in that, When the difference between the voltage at the load output terminal and the voltage at the power supply terminal is greater than a reference voltage, the reverse judgment module determines that the voltage at the load output terminal is greater than the voltage at the power supply terminal, wherein the reference voltage is greater than 0; or, When the voltage at the load output terminal minus the voltage at the power supply terminal is greater than or equal to the turn-on threshold of the parasitic diode of the power switch, the reverse judgment module determines that the voltage at the load output terminal is greater than the voltage at the power supply terminal.

9. An integrated circuit chip, characterized in that, Includes the high-side intelligent electronic switch as described in any one of claims 1-8, wherein the power supply terminal is a power supply pin, the power ground terminal is a power ground pin, and the load output terminal is a load output pin.

10. The integrated circuit chip according to claim 9, characterized in that, The power switch is a MOSFET, and the three terminals of the MOSFET in the intelligent electronic switch are located in the same plane.

11. A chip product, characterized in that, Includes the high-side intelligent electronic switch as described in any one of claims 1-8, wherein the components of the high-side intelligent electronic switch other than the power switch are located on a first integrated circuit chip, and the power switch is located on a second integrated circuit chip; Wherein, the power supply terminal is a power supply pin, the power ground terminal is a power ground pin, the load output terminal is a load output pin, the first integrated circuit chip includes the power supply pin and the power ground pin, and the second integrated circuit chip includes the load output pin.

12. The chip product according to claim 11, characterized in that, The three terminals of the MOS transistor in the first integrated circuit chip are located on the same plane.

13. An electromechanical device, characterized in that, This includes the high-side intelligent electronic switch as described in any one of claims 1-8, the integrated circuit chip as described in claim 9 or 10, or the chip product as described in claim 11 or 12; It also includes a power supply, a load, and a microprocessor, wherein the positive terminal of the power supply is connected to the power supply terminal, the negative terminal of the power supply is connected to the power supply ground terminal, one end of the load is connected to the load output terminal, the other end of the load is connected to the power supply ground terminal, and the microprocessor is connected to the intelligent electronic switch.

14. The electromechanical equipment according to claim 13, characterized in that, The electromechanical equipment includes automobiles.

15. A control method for a high-side intelligent electronic switch, the intelligent electronic switch comprising: The system comprises a power supply terminal, a power ground terminal, a load output terminal, and a switch control module, wherein the power supply terminal is connected to the positive terminal of the power supply, the power ground terminal is connected to the negative terminal of the power supply, and the load output terminal is connected to the load; a power switch has a first terminal connected to the power supply terminal, a second terminal connected to the load output terminal, and a control terminal connected to the switch control module, the switch control module being used to control the power switch to turn on or off, characterized in that the method includes: Determine whether the voltage at the load output terminal is greater than the voltage at the power supply terminal; If the determination result is yes, the power supply terminal is disconnected from the node associated with the parasitic current to block the flow of parasitic current, so that the power switch can be turned on; wherein, the switch control module includes a shutdown switch, the smart electronic switch includes a p-type substrate, a first n-type buried layer is formed on the p-type substrate, a deep p-well is formed in the first n-type buried layer, and a shutdown switch is formed on the deep p-well, the shutdown switch being connected to the load output terminal and the control terminal of the power switch respectively; wherein, the node associated with the parasitic current includes the n-type buried layer itself or its end; If the judgment result is negative, the node associated with the power supply terminal and the parasitic current is turned on and connected.

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