Buried gate type perovskite solar cell and preparation method thereof

Abstract

The invention relates to a buried-gate perovskite solar cell and a preparation method thereof. The solar cell structurally comprises a substrate, a solar cell layer, a first electrode and a second electrode from bottom to top, the perovskite layer is compounded on the upper surface of the substrate; the battery negative electrode and the battery positive electrode are buried in the perovskite layer; the packaging adhesive layer is compounded on the upper surface of the perovskite layer; the cover plate is compounded on the upper surface of the packaging adhesive layer; according to the buried gate type perovskite solar cell structure, the electrodes are buried in the middle of the perovskite layer, and the purposes of efficiently separating photon-generated carriers and improving the photoelectric conversion efficiency can be achieved by adjusting the positions of the electrodes, the diameters and the intervals of the electrodes, the components and the structures of electrode covering materials and the like; in addition, compared with an existing perovskite cell technology, the preparation process is relatively simple, and large-scale production is facilitated; meanwhile, raw material loss in the preparation process can be obviously reduced, and battery cost is effectively reduced.

Description

Technical Field

[0001] The present invention relates to the field of solar cells, and in particular to a buried-gate perovskite solar cell and a preparation method thereof. Background Art

[0002] In the existing technology, in recent years, perovskite solar cell technology has made significant progress in stages, and the photoelectric conversion efficiency has been increased to more than 20%. More importantly, the elements required to prepare perovskite materials are abundant and inexpensive, and perovskite materials can be processed by solution method, which is very conducive to reducing the price of solar cells and is expected to truly achieve a power generation cost lower than that of traditional energy. So far, most perovskite solar cells use a vertical "sandwich" structure, with the perovskite layer located between the negative electrode material layer and the positive electrode material layer. The negative electrode material layer and the positive electrode material layer are usually prepared into a film by sputtering and spin coating to collect the photogenerated electrons and holes generated by the perovskite layer.

[0003] In the buried-grid perovskite solar cell structure of the present invention, ultra-fine metal wires coated with negative electrode materials and positive electrode materials are used as extraction electrodes for photogenerated electrons and holes. On the electrode network, a high-quality perovskite layer is prepared by a solution method, which can significantly reduce material loss and effectively reduce battery costs. At the same time, the metal wire electrode is located inside the perovskite layer, and the purpose of efficiently separating photogenerated carriers can be achieved by adjusting its position in the perovskite, the diameter and spacing of the electrode, the composition and structure of the electrode covering material, etc. In addition, the structure and preparation method of the metal wire electrode perovskite solar cell of the present invention have a relatively simple preparation process and can be used for large-scale production. Summary of the invention

[0004] The embodiment of the present application provides a buried-gate perovskite solar cell and a method for preparing the same. The buried-gate perovskite solar cell structure of the present invention has an electrode buried in the middle of the perovskite layer. The position of the electrode, the diameter and spacing of the electrode, the composition and structure of the electrode covering material can be adjusted to achieve the purpose of efficiently separating photogenerated carriers and improving the photoelectric conversion efficiency. In addition, compared with the existing perovskite battery technology, the structure and preparation method of the buried-gate perovskite solar cell have a relatively simple preparation process and are convenient for large-scale production. At the same time, the loss of raw materials in the preparation process can be significantly reduced, effectively reducing the cost of the battery.

[0005] The technical solution adopted in the embodiments of the present application is as follows.

[0006] A buried-gate perovskite solar cell comprises a substrate, a perovskite layer composited on the upper surface of the substrate, a negative electrode metal wire located inside the perovskite layer, a positive electrode metal wire located inside the perovskite layer, an encapsulation glue layer composited on the upper surface of the perovskite layer, and a cover plate composited on the upper surface of the encapsulation glue layer; the substrate, the perovskite layer, the negative electrode metal wire, the positive electrode metal wire, the encapsulation glue layer and the cover plate are stacked in sequence.

[0007] As a further improvement of the above technical solution: the thickness of the perovskite layer is 1-500m; the diameters of the positive metal wire and the negative metal wire are 30-300m; the thickness of the coating layer of the negative metal wire and the positive metal wire material is 10-300nm; the interval between the negative metal wire and the positive metal wire is 10-500m.

[0008] As a further improvement of the above technical solution: the thickness of the perovskite layer is 5-10m; the diameters of the positive metal wire and the negative metal wire are 10-100m; the thickness of the coating layer of the negative metal wire and the positive metal wire material is 20-100nm; the interval between the negative metal wire and the positive metal wire is 100-300m.

[0009] As a further improvement of the above technical solution: the material of the substrate is transparent glass, plastic or a double-layer or multi-layer composite material.

[0010] As a further improvement of the above technical solution: the material of the positive electrode metal wire and the negative electrode metal wire is Ag, Al, Au, Ni, Ti, Cu, etc., as well as alloys or multi-layer composite materials.

[0011] As a further improvement of the above technical solution: the covering material on the surface of the positive electrode metal wire is NiOx, NiMgO, MoOx, Spiro-OMeTAD, P3HT, PTAA, PCPDTBT or a double-layer or multi-layer composite, and the covering method is magnetron sputtering, thermal evaporation, chemical reaction, brushing and spraying.

[0012] As a further improvement of the above technical solution: the material on the surface of the negative electrode metal wire is ZnO, TiO2, SnO2, PCBM or a double-layer or multi-layer composite, and the covering method is magnetron sputtering, thermal evaporation, chemical reaction, brushing, and spraying.

[0013] As a further improvement of the above technical solution: the material of the perovskite layer is CsPbI3, FAPbI3, MAPbI3 and a mixture thereof

[0014] As a further improvement of the above technical solution: S1) covering the surface of the metal wire with a negative polarity material and a positive polarity material to extract photogenerated electrons and holes respectively, which are called negative metal wire and positive metal wire;

[0015] S2) determining the spacing between the negative electrode metal wire and the positive electrode metal wire, and preforming them into an alternatingly distributed mesh;

[0016] S3) placing the prefabricated meshed negative electrode metal wire and the positive electrode metal wire on the substrate, and determining the distance between the metal mesh and the substrate;

[0017] S4) preparing a perovskite layer of a certain thickness on the upper part of the substrate, and making the negative electrode metal wire and the positive electrode metal wire form good contact with the perovskite layer;

[0018] S5) laying an encapsulation adhesive layer on the upper surface of the perovskite layer;

[0019] S6) Covering the encapsulation adhesive layer with a cover plate and performing encapsulation to achieve battery sealing.

[0020] One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages:

[0021] 1. In the buried-gate perovskite solar cell structure, ultra-fine metal wires coated with negative electrode materials and positive electrode materials are used as extraction electrodes for photogenerated electrons and holes; on the electrode network, a high-quality perovskite layer is prepared by a solution method, which can significantly reduce material loss and effectively reduce battery costs; at the same time, the metal wire electrode is located inside the perovskite layer, and the purpose of efficiently separating photogenerated carriers can be achieved by adjusting its position in the perovskite, the diameter and spacing of the electrodes, the composition and structure of the electrode covering material, etc.; in addition, the structure and preparation method of the metal wire electrode perovskite solar cell of the present invention have a relatively simple preparation process and can be used for large-scale production. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a schematic structural diagram of the buried-gate perovskite solar cell in the present invention.

[0023] Figure 2 It is a schematic structural diagram of the buried-gate perovskite solar cell in the present invention.

[0024] Figure 3 It is a schematic structural diagram of the buried-gate perovskite solar cell in the present invention.

[0025] Figure 4 It is a schematic structural diagram of the buried-gate perovskite solar cell in the present invention.

[0026] Figure 5It is a schematic structural diagram of the buried-gate perovskite solar cell in the present invention.

[0027] Figure 6 It is a schematic structural diagram of the buried-gate perovskite solar cell in the present invention.

[0028] In the figure: 1. Negative metal wire; 2. Positive metal wire; 3. Substrate; 4. Perovskite layer; 5. Encapsulation glue layer; 6. Cover plate. DETAILED DESCRIPTION

[0029] The embodiment of the present application provides a buried-gate perovskite solar cell and a method for preparing the same. The buried-gate perovskite solar cell structure of the present invention has an electrode buried in the middle of the perovskite layer. The position of the electrode, the diameter and spacing of the electrode, the composition and structure of the electrode covering material can be adjusted to achieve the purpose of efficiently separating photogenerated carriers and improving the photoelectric conversion efficiency. In addition, compared with the existing perovskite battery technology, the structure and preparation method of the buried-gate perovskite solar cell have a relatively simple preparation process and are convenient for large-scale production. At the same time, the loss of raw materials in the preparation process can be significantly reduced, effectively reducing the cost of the battery.

[0030] The technical solution in the embodiment of the present application is to solve the above problems, and the overall idea is as follows

[0031] In order to better understand the above technical solution, the above technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0032] A buried-gate perovskite solar cell comprises a substrate 3, a perovskite layer 4 composited on the upper surface of the substrate 3, a negative electrode metal wire 1 located inside the perovskite layer 4, a positive electrode metal wire 2 located inside the perovskite layer 4, an encapsulation glue layer 5 composited on the upper surface of the perovskite layer 4, and a cover plate 6 composited on the upper surface of the encapsulation glue layer 5; the substrate 3, the perovskite layer 4, the negative electrode metal wire 1, the positive electrode metal wire 2, the encapsulation glue layer 5 and the cover plate 6 are stacked in sequence.

[0033] The thickness of the perovskite layer 4 is 1-500 μm; the diameters of the positive metal wire 2 and the negative metal wire 1 are 30-300 μm; the thickness of the material coating layer of the negative metal wire 1 and the positive metal wire 2 is 10-300 nm; the interval between the negative metal wire 1 and the positive metal wire 2 is 10-500 μm.

[0034] The thickness of the perovskite layer 4 is 5-10 μm; the diameters of the positive metal wire 2 and the negative metal wire 1 are 10-100 μm; the thickness of the material coating layer of the negative metal wire 1 and the positive metal wire 2 is 20-100 nm; the interval between the negative metal wire 1 and the positive metal wire 2 is 100-300 μm.

[0035] The substrate 3 is made of transparent glass, plastic or a double-layer or multi-layer composite material.

[0036] The material of the positive electrode metal wire 2 and the negative electrode metal wire 1 is Ag, Al, Au, Ni, Ti, Cu, etc., as well as alloys or multi-layer composite materials.

[0037] The covering material on the surface of the positive electrode metal wire 2 is NiOx, NiMgO, MoOx, Spiro-OMeTAD, P3HT, PTAA, PCPDTBT or a double-layer or multi-layer composite, and the covering method is magnetron sputtering, thermal evaporation, chemical reaction, brushing and spraying.

[0038] The material on the surface of the negative electrode metal wire 1 is ZnO, TiO2, SnO2, PCBM or double-layer or multi-layer composite, and the covering method is magnetron sputtering, thermal evaporation, chemical reaction, brushing, and spraying.

[0039] The material of the perovskite layer 4 is CsPbI3, FAPbI3, MAPbI3 and their mixtures

[0040] S1) Covering the surface of the metal wire with negative polarity material and positive polarity material to extract photogenerated electrons and holes, respectively, is called negative metal wire 1 and positive metal wire 2;

[0041] S2) determining the spacing between the negative electrode metal wire 1 and the positive electrode metal wire 2, and pre-forming them into an alternatingly distributed mesh;

[0042] S3) placing the prefabricated meshed negative electrode metal wire 1 and positive electrode metal wire 2 on the substrate 3, and determining the distance between the metal mesh and the substrate 3;

[0043] S4) preparing a perovskite layer 4 of a certain thickness on the upper part of the substrate 3, and making the negative electrode metal wire 1 and the positive electrode metal wire 2 form good contact with the perovskite layer 4;

[0044] S5) laying a packaging glue layer 5 on the upper surface of the perovskite layer 4;

[0045] S6) Covering the encapsulation adhesive layer 5 with a cover plate 6 and performing encapsulation to achieve battery sealing.

[0046] Embodiment 1:

[0047] First, the surface of the polyimide substrate was ultrasonically cleaned for 30 minutes using detergent, deionized water and isopropyl alcohol in sequence, then dried with a nitrogen gun and placed in a UV-ozone cleaning machine for treatment for 30 minutes.

[0048] Then, the gold wire with a diameter of 50 μm was ultrasonically cleaned in acetone, anhydrous ethanol, and deionized water for 10 minutes, and then dried with nitrogen for later use.

[0049] Then, if Figure 1As shown, a 20 nm thick Spiro-OMeTAD thin film was prepared on a gold wire by fluidized bed coating method and used as the positive metal electrode of the battery.

[0050] Then, if Figure 1 As shown, a 30 nm thick tin dioxide nanoparticle layer was prepared on the surface of the gold wire by fluidized bed coating method and used as the negative metal electrode of the battery.

[0051] Then, if Figure 2 As shown, the prepared positive metal electrode wires and negative metal electrode wires are formed into an electrode network with a spacing of 100 μm on a prefabricated tool.

[0052] Then, if Figure 3 As shown, the prefabricated meshed negative electrode metal wire and positive electrode metal wire are placed on the substrate, and the distance between the metal mesh and the substrate is set to 30 μm;

[0053] Then, if Figure 4 As shown, the prepared FAPbI 3 The perovskite solution is coated on the surface of the substrate and covers the electrode network placed above, and is annealed at 150°C for 10 minutes to form the required α-FAPbI 3 Thin film layer.

[0054] Then, if Figure 5 As shown, an EVA film is covered on the surface of the perovskite layer.

[0055] Finally, if Figure 6 As shown, a PMMA cover plate is covered on the EVA packaging film, and then a lamination process is performed to achieve battery sealing.

[0056] Embodiment 2:

[0057] First, the surface of the glass substrate was ultrasonically cleaned for 30 minutes using detergent, deionized water and isopropyl alcohol in sequence, then dried with a nitrogen gun and placed in a plasma cleaning machine for 30 minutes.

[0058] Then, the copper wire with a diameter of 50 μm was ultrasonically cleaned in acetone, anhydrous ethanol, and deionized water for 10 minutes, and then dried with nitrogen for later use.

[0059] Then, if Figure 1 As shown in the figure, NiO with a thickness of 50 nm was prepared on the surface of the copper wire by magnetron sputtering. x The film forms the positive electrode metal wire.

[0060] Then, if Figure 1 As shown in the figure, a SnO layer with a thickness of 50 nm is prepared on the surface of the copper wire by ALD coating. x The film forms the negative electrode metal wire.

[0061] Then, if Figure 2 As shown, the prepared positive metal electrode wires and negative metal electrode wires are formed into an electrode network with a spacing of 200 μm on a prefabricated tool.

[0062] Then, if Figure 3 As shown, the prefabricated meshed negative electrode metal wire and positive electrode metal wire are placed on the substrate, and the spacing between the metal mesh and the substrate is set to 50 μm;

[0063] Then, if Figure 4 As shown, the prepared (FAPbI 3 ) x (MAPbBr 3 ) 1-x The perovskite solution is coated on the surface of the substrate and covers the electrode network placed above, and is annealed at 150°C for 10 minutes to form the required (FAPbI 3 ) x (MAPbBr 3 ) 1-x Thin film layer.

[0064] Then, if Figure 5 As shown, an EPE film is covered on the surface of the perovskite layer.

[0065] Finally, if Figure 6 As shown, a glass cover is placed on the EVA encapsulation film, and then a lamination process is performed to achieve battery sealing.

[0066] Although the preferred embodiments of the present invention have been described, those skilled in the art may make other changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.

[0067] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A buried-gate perovskite solar cell, characterized in that: The invention comprises a substrate (3), a perovskite layer (4) composited on the upper surface of the substrate (3), a negative electrode metal wire (1) located inside the perovskite layer (4), a positive electrode metal wire (2) located inside the perovskite layer (4), a packaging glue layer (5) composited on the upper surface of the perovskite layer (4), and a cover plate (6) composited on the upper surface of the packaging glue layer (5); the substrate (3), the perovskite layer (4), the negative electrode metal wire (1), the positive electrode metal wire (2), the packaging glue layer (5), and the cover plate (6) are stacked in sequence.

2. The buried-gate perovskite solar cell according to claim 1, characterized in that: The thickness of the perovskite layer (4) is 1-500 μm; the diameters of the positive metal wire (2) and the negative metal wire (1) are 30-300 μm; the thickness of the coating layer of the negative metal wire (1) and the positive metal wire (2) is 10-300 nm; and the interval between the negative metal wire (1) and the positive metal wire (2) is 10-500 μm.

3. The buried-gate perovskite solar cell according to claim 2, characterized in that: The thickness of the perovskite layer (4) is 5-10 μm; the diameters of the positive metal wire (2) and the negative metal wire (1) are 10-100 μm; the thickness of the coating layer of the negative metal wire (1) and the positive metal wire (2) is 20-100 nm; and the interval between the negative metal wire (1) and the positive metal wire (2) is 100-300 μm.

4. The buried-gate perovskite solar cell according to claim 1, characterized in that: The substrate (3) is made of transparent glass, plastic or a double-layer or multi-layer composite material.

5. The buried-gate perovskite solar cell and the method for preparing the same according to claim 1, characterized in that: The material of the positive electrode metal wire (2) and the negative electrode metal wire (1) is Ag, Al, Au, Ni, Ti, Cu, etc., as well as alloys or multi-layer composite materials.

6. The buried-gate perovskite solar cell and the method for preparing the same according to claim 1, characterized in that: The coating material on the surface of the positive electrode metal wire (2) is NiO x 、NiMgO、MoO x , Spiro-OMeTAD, P3HT, PTAA, PCPDTBT or double-layer or multi-layer composite, the covering methods are magnetron sputtering, thermal evaporation, chemical reaction, brushing and spraying.

7. The buried-gate perovskite solar cell and the method for preparing the same according to claim 1, characterized in that: The material on the surface of the negative electrode metal wire (1) is ZnO, TiO2, SnO2, PCBM or a double-layer or multi-layer composite, and the covering method is magnetron sputtering, thermal evaporation, chemical reaction, brushing, or spraying.

8. The buried-gate perovskite solar cell and the method for preparing the same according to claim 1, characterized in that: The material of the perovskite layer (4) is CsPbI3, FAPbI3, MAPbI3 and a mixture thereof.

9. A buried-gate perovskite solar cell and a method for preparing the same, characterized in that: S1) Covering the surface of the metal wire with negative polarity material and positive polarity material to extract photogenerated electrons and holes, respectively, is called negative metal wire (1) and positive metal wire (2); S2) determining the spacing between the negative electrode metal wire (1) and the positive electrode metal wire (2), and preforming them into an alternatingly distributed mesh; S3) placing the prefabricated meshed negative electrode metal wire (1) and the positive electrode metal wire (2) above the substrate (3), and determining the distance between the metal mesh and the substrate (3); S4) preparing a perovskite layer (4) of a certain thickness on the upper part of the substrate (3), and making the negative electrode metal wire (1) and the positive electrode metal wire (2) form good contact with the perovskite layer (4); S5) laying a packaging glue layer (5) on the upper surface of the perovskite layer (4); S6) Covering the cover plate (6) on the packaging adhesive layer (5) and performing packaging to achieve battery sealing.

Images