Preparation method of ketone micromolecule passivated perovskite solar cell
By using ketone small molecule passivator to passivate the light absorbing layer of perovskite solar cells, the problem of defects in perovskite materials during crystallization is solved, and the effect of improving the performance and stability of solar cells is achieved.
Patent Information
- Application Number
- CN202411867188.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-18
- Publication Date
- 2025-05-06
AI Technical Summary
Existing perovskite solar cell materials are prone to cause a variety of defects during the crystallization process, resulting in poor device performance and stability.
The perovskite absorber is passivated by ketone small molecule passivator to reduce surface defects and improve the carrier transport capability of the FAxCs1-xPbI3 film and the Spiro-MeOTAD film.
It effectively improves the photoelectric conversion efficiency and long-term stability of perovskite solar cells, and significantly improves the performance of the device.
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Figure CN119947540A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of solar cells, and in particular to a method for preparing a ketone small molecule passivated perovskite solar cell. Background Art
[0002] Metal halide perovskite solar cells are widely considered to be one of the most promising candidates to replace the current mainstream crystalline silicon photovoltaic technology in the future due to their significant advantages such as low material cost, solution processing and high conversion efficiency. In the past decade, the conversion efficiency of single-cell perovskite solar cells has achieved an amazing leap, rapidly increasing from 3.81% in 2009 to 26.15%. However, due to the inherent ionic characteristics of perovskite materials, a variety of defects will inevitably be generated during their crystallization process, including zero-dimensional ion vacancies, interstitial ions, antisite defects, two-dimensional grain boundary defects and three-dimensional surface Pb0 clusters. These defects can be further classified into deep energy level defects and shallow energy level defects; although shallow energy level defects will not become non-radiative recombination centers, they will promote ion migration, which is not conducive to the long-term stability of the device; while deep energy level defects will capture photogenerated carriers, resulting in serious non-radiative recombination, thereby reducing the performance of the device. In addition, these defects are particularly vulnerable to attack by water and oxygen, accelerating the decomposition process of perovskite materials. Therefore, reducing or passivating defects in the perovskite light-absorbing layer has become the key to improving the performance and stability of perovskite solar cells. Summary of the invention
[0003] The problem to be solved by the present invention is to provide a method for preparing a ketone small molecule passivated perovskite solar cell in view of the above-mentioned deficiencies in the prior art, which reduces the surface defects of the perovskite light-absorbing layer through ketone small molecule passivation and improves FA x Cs 1-x PbI 3 The carrier transport capacity of the perovskite film and the Spiro-MeOTAD film is improved, thereby achieving the purpose of improving the device performance and stability of solar cells.
[0004] The above-mentioned object of the present invention is achieved through the following technical solutions: A method for preparing a ketone small molecule passivated perovskite solar cell comprises the following steps: S1 Spin coating SnO on the surface of conductive substrate 2 (tin oxide) solution, annealing to obtain an electron transport layer; S2 spin-coats CsI / PbI on the surface of the electron transport layer 2 (cesium iodide / lead iodide) solution and FAI / MACl (methylguanidine lead iodate / methylammonium chloride) solution, and annealed after spin coating to obtain the perovskite light absorbing layer (FAx Cs 1- x PbI 3 ); S3: spin coating a ketone small molecule solution on the surface of the perovskite light absorbing layer, wherein the ketone small molecule is one or a combination of quinoline-4(1H)-one, quinoline-2(1H)-one, 2-aminoquinoline-4(1H)-one, acridine-9(10H)-one, 6,7-dimethoxyquinoline-4(1H)-one, and 6-methoxyquinoline-4(1H)-one, and annealing to obtain a small molecule passivation layer; S4 spin-coats a Spiro-MeOTAD (2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene) solution on the surface of the small molecule passivation layer to obtain a hole transport layer; S5: evaporating a silver electrode on the surface of the hole transport layer to obtain a metal electrode layer.
[0005] Furthermore, in the S1, the ITO conductive glass is ultrasonically cleaned in detergent, deionized water, ethanol, and isopropanol in sequence for 10 to 15 minutes, blown dry with nitrogen, and then subjected to plasma treatment with a plasma treatment power of 40 to 50 W and a plasma treatment time of 2 to 3 minutes to obtain the conductive substrate.
[0006] Furthermore, in the S1, SnO 2 SnO in solution 2 The concentration is 2.50~3.00wt% and the solvent is water.
[0007] Furthermore, in S1, the spin coating speed is controlled to be 1800-2200 rpm, the spin time is 25-35 s, the annealing temperature is 140-160° C., and the annealing time is 25-35 min.
[0008] Furthermore, in S2, the electron transport layer is preliminarily subjected to plasma treatment, the plasma treatment power is 40-50 W, and the plasma treatment time is 2-3 min.
[0009] Furthermore, in S2, CsI / PbI 2 PbI in solution 2 The concentration is 1.4~1.6mmol / mL, and the CsI doping amount is 4.0~6.0mol%PbI 2 , the solvent is DMF and DMSO in a volume ratio of 8~10:1.
[0010] Furthermore, in S2, the CsI / PbI 2The spin coating speed of the solution is 1400~1600 rpm, the spin coating time is 25~35 s, the annealing temperature is 60~80°C, and the annealing time is 50~70 s.
[0011] Furthermore, in the S2, the FAI concentration in the FAI / MACl solution is 80-100 mg / mL, the MACl dosage is 8-12 wt% FAI, and the solvent is isopropanol.
[0012] Furthermore, in S2, the spin coating speed of the FAI / MACl solution is controlled to be 1700-1900 rpm, the spin coating time is 25-35 s, the annealing temperature is 140-160° C., the annealing time is 12-18 min, and the annealing environment is in air at RH=30-40%.
[0013] Furthermore, in S3, the ketone small molecule concentration of the ketone small molecule solution is 4-16 mmol / mL, and the solvent is isopropanol.
[0014] Furthermore, in S3, the spin coating speed is controlled to be 4800-5200 rpm, the spin coating time is controlled to be 25-35 s, the annealing temperature is controlled to be 60-80° C., and the annealing time is controlled to be 50-70 s.
[0015] Further, in S4, the concentration of Spiro-MeOTAD in the Spiro-MeOTAD solution is 70.0-75.0 mg / mL, and the solvent is chlorobenzene.
[0016] Furthermore, in the S4, 25.0-30.0 μL / mL of tBP (tributylphosphine) solution and 15.0-20.0 μL / mL of Li-TFSI (lithium bis(trifluoromethylsulfonyl)imide) solution are pre-doped into the Spiro-MeOTAD solution, and the Li-TFSI concentration in the Li-TFSI solution is 500-550 mg / mL, and the solvent is acetonitrile.
[0017] Furthermore, in S4, the spin coating speed is controlled to be 3800-4200 rpm, and the spin coating time is controlled to be 25-35 s.
[0018] Furthermore, in S5, the evaporation thickness is controlled to be 100-120 nm, and the evaporation rate is not more than 1 Å / s.
[0019] In summary, the beneficial technical effects of the present invention are: 1. The present invention passivates the surface defects of the perovskite material by using a simple solvent treatment method. This method can not only effectively improve the photoelectric conversion efficiency of the perovskite solar cell, but also significantly enhance its long-term operation stability; 2. When selecting organic small molecules for passivation, the present invention particularly selects those containing both Lewis basic groups (such as carbonyl C=O), which can effectively passivate the positively charged defects on the surface of the material, and Lewis acidic groups (such as amino NH), which help to inhibit the migration of halogen ions in the perovskite material to a certain extent, thereby further improving the stability and performance of the material.
[0020] 3. The organic small molecule passivators used in the present invention all have a conjugated main structure. Such a structural design allows them to perform the interface passivation function without having a negative impact on the transport performance of interface carriers, thereby ensuring efficient carrier transport of the material during the photoelectric conversion process. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] Figure 1 It is a schematic diagram of the structure of the perovskite solar cell prepared in Example 1 of the present invention.
[0022] Figure 2 It is a JV test curve diagram of the perovskite solar cells prepared in Example 4, Example 5 and Comparative Example 1 of the present invention.
[0023] Figure 3 1 is the XRD spectrum of the perovskite layer prepared in Example 4, Example 5 and Comparative Example 1 of the present invention.
[0024] Figure 4 3 and 4 are scanning electron microscope images of the perovskite layers prepared in Example 4, Example 5 and Comparative Example 1 of the present invention. DETAILED DESCRIPTION
[0025] In order to make the technical means, creative features, objectives and functions achieved by the present invention clearer and easier to understand, the present invention is further explained below in conjunction with the accompanying drawings and specific implementation methods. Example
[0026] Example 1: Reference Figure 1 , is a method for preparing a ketone small molecule passivated perovskite solar cell disclosed in the present invention, comprising the following steps: S1: The ITO conductive glass is ultrasonically cleaned in detergent, deionized water, ethanol, and isopropanol in sequence for 12 minutes, blown dry with nitrogen, and then subjected to plasma treatment at a power of 45 W and a plasma treatment time of 2 minutes to obtain a conductive substrate; Then configure SnO 2 Solution, SnO 2 SnO in solution 2 The concentration is 2.67wt%, and the solvent is water; Then, SnO is spin-coated on the surface of the conductive substrate. 2solution, annealing, and controlling the spin coating speed to 2000 rpm, the spin time to 30 s, the annealing temperature to 150 ° C, and the annealing time to 30 min to obtain an electron transport layer; S2 pre-processes the electron transport layer with plasma, the plasma treatment power is 45W, and the plasma treatment time is 2min; Reconfiguration of CsI / PbI 2 solution and FAI / MACl solution, CsI / PbI 2 PbI in solution 2 The concentration is 1.5mmol / mL, and the CsI doping amount is 5.0mol%PbI 2 (i.e. 0.075mmol / mL), the solvent is DMF and DMSO in a volume ratio of 9:1, the FAI concentration in the FAI / MACl solution is 90mg / mL, the MACl dosage is 10wt%FAI (i.e. 9mg / mL), and the solvent is isopropanol; Then spin-coat CsI / PbI on the surface of the electron transport layer. 2 The solution was annealed, and the spin coating speed was controlled to be 1500 rpm, the spin coating time was 30 s, the annealing temperature was 70 ° C, and the annealing time was 60 s to obtain CsI / PbI 2 film; Then on CsI / PbI 2 The surface of the film was spin-coated with FAI / MACl solution, annealed, and the spin-coating speed was controlled to be 1800 rpm, the spin-coating time was 30 s, the annealing temperature was 150 °C, the annealing time was 15 min, and the annealing environment was RH = 30~40% in air to obtain the perovskite light absorbing layer (FA x Cs 1-x PbI 3 ); S3 first prepares a ketone small molecule solution, wherein the ketone small molecule of the ketone small molecule solution is quinoline-4(1H)-one, the ketone small molecule concentration is 4 mmol / mL, and the solvent is isopropanol; A ketone small molecule solution is spin-coated on the surface of the perovskite light-absorbing layer, annealed, and the spin-coating speed is controlled to be 5000 rpm, the spin-coating time is 30 s, the annealing temperature is 70° C., and the annealing time is 60 s to obtain a small molecule passivation layer; S4 first prepares tBP solution and Li-TFSI solution, the tBP solution is analytical grade, the Li-TFSI concentration in the Li-TFSI solution is 520 mg / mL, and the solvent is acetonitrile; Prepare a Spiro-MeOTAD solution, wherein the concentration of Spiro-MeOTAD in the Spiro-MeOTAD solution is 72.3 mg / mL, the solvent is chlorobenzene, and 28.8 μL of tBP solution and 17.5 μL of Li-TFSI solution are added to each mL of the Spiro-MeOTAD solution; Then, the Spiro-MeOTAD solution was spin-coated on the surface of the small molecule passivation layer, and the spin-coating speed was controlled to be 4000 rpm and the spin-coating time was 30 s to obtain a hole transport layer; S5 evaporates a silver electrode on the surface of the hole transport layer, and controls the evaporation thickness to be 100 nm and the evaporation rate to be no more than 1Å / s, to obtain a metal electrode layer.
[0027] Example 2: A method for preparing a ketone small molecule passivated perovskite solar cell disclosed in the present invention. The difference from Example 1 is that in S3, the ketone small molecule of the ketone small molecule solution is acridinium-9(10H)-one, the ketone small molecule concentration is 4 mmol / mL, and the solvent is isopropanol.
[0028] Example 3: A method for preparing a ketone small molecule passivated perovskite solar cell disclosed in the present invention. The difference from Example 1 is that in S3, the ketone small molecule of the ketone small molecule solution is quinoline-4(1H)-one, the ketone small molecule concentration is 8 mmol / mL, and the solvent is isopropanol.
[0029] Example 4: A method for preparing a ketone small molecule passivated perovskite solar cell disclosed in the present invention. The difference from Example 1 is that in S3, the ketone small molecule of the ketone small molecule solution is acridinium-9(10H)-one, the ketone small molecule concentration is 8 mmol / mL, and the solvent is isopropanol.
[0030] Example 5: A method for preparing a ketone small molecule passivated perovskite solar cell disclosed in the present invention. The difference from Example 1 is that in S3, the ketone small molecule of the ketone small molecule solution is quinoline-4(1H)-one, the ketone small molecule concentration is 12 mmol / mL, and the solvent is isopropanol.
[0031] Example 6: A method for preparing a ketone small molecule passivated perovskite solar cell disclosed in the present invention. The difference from Example 1 is that in S3, the ketone small molecule of the ketone small molecule solution is acridinium-9(10H)-one, the ketone small molecule concentration is 12 mmol / mL, and the solvent is isopropanol.
[0032] Example 7: A method for preparing a ketone small molecule passivated perovskite solar cell disclosed in the present invention. The difference from Example 1 is that in S3, the ketone small molecule of the ketone small molecule solution is quinoline-4(1H)-one, the ketone small molecule concentration is 16 mmol / mL, and the solvent is isopropanol.
[0033] Example 8: A method for preparing a ketone small molecule passivated perovskite solar cell disclosed in the present invention. The difference from Example 1 is that in S3, the ketone small molecule of the ketone small molecule solution is acridinium-9(10H)-one, the ketone small molecule concentration is 16 mmol / mL, and the solvent is isopropanol.
[0034] Examples 9 to 12 are methods for preparing a ketone small molecule passivated perovskite solar cell disclosed in the present invention. The difference from Example 1 is that in S3, the ketone small molecules of the ketone small molecule solution are quinoline-2(1H)-one, 2-aminoquinoline-4(1H)-one, 6,7-dimethoxyquinoline-4(1H)-one, and 6-methoxyquinoline-4(1H)-one.
[0035] Example 13: A method for preparing a ketone small molecule passivated perovskite solar cell disclosed in the present invention, comprising the following steps: S1: The ITO conductive glass is ultrasonically cleaned in detergent, deionized water, ethanol, and isopropanol in sequence for 10 minutes, blown dry with nitrogen, and then subjected to plasma treatment with a plasma treatment power of 40 W and a plasma treatment time of 2 minutes to obtain a conductive substrate; Then configure SnO 2 Solution, SnO 2 SnO in solution 2 The concentration is 2.50wt%, and the solvent is water; Then, SnO is spin-coated on the surface of the conductive substrate. 2 solution, annealing, and controlling the spin coating speed to 1800 rpm, the spin time to 25 s, the annealing temperature to 140 ° C, and the annealing time to 25 min to obtain an electron transport layer; S2 pre-processes the electron transport layer with plasma, the plasma treatment power is 40W, and the plasma treatment time is 2min; Reconfiguration of CsI / PbI 2 solution and FAI / MACl solution, CsI / PbI 2 PbI in solution 2 The concentration is 1.4mmol / mL, and the CsI doping amount is 4.0mol%PbI 2, the solvent is DMF and DMSO in a volume ratio of 8:1, the FAI concentration in the FAI / MACl solution is 80 mg / mL, the MACl dosage is 8 wt% FAI, and the solvent is isopropanol; Then spin-coat CsI / PbI on the surface of the electron transport layer. 2 The solution was annealed and the spin coating speed was controlled to be 1400-1600 rpm, the spin coating time was 25 s, the annealing temperature was 60 °C, and the annealing time was 50 s to obtain CsI / PbI 2 film; Then on CsI / PbI 2 The surface of the film was spin-coated with FAI / MACl solution, annealed, and the spin-coating speed was controlled to be 1700 rpm, the spin-coating time was 25 s, the annealing temperature was 140 °C, the annealing time was 12 min, and the annealing environment was RH = 30~40% in air to obtain a perovskite light absorbing layer (FA x Cs 1-x PbI 3 ); S3 first prepares a ketone small molecule solution, wherein the ketone small molecule of the ketone small molecule solution is quinoline-4(1H)-one, the ketone small molecule concentration is 4 mmol / mL, and the solvent is isopropanol; A ketone small molecule solution is spin-coated on the surface of the perovskite light-absorbing layer, annealed, and the spin-coating speed is controlled to be 4800 rpm, the spin-coating time is 25 s, the annealing temperature is 60° C., and the annealing time is 50 s to obtain a small molecule passivation layer; S4 first prepares tBP solution and Li-TFSI solution, the tBP solution is analytical grade, the concentration of Li-TFSI in the Li-TFSI solution is 500 mg / mL, and the solvent is acetonitrile; Prepare a Spiro-MeOTAD solution, wherein the concentration of Spiro-MeOTAD in the Spiro-MeOTAD solution is 70.0 mg / mL, the solvent is chlorobenzene, and 25.0 μL of tBP solution and 15.0 μL of Li-TFSI solution are added to each mL of the Spiro-MeOTAD solution; Then, the Spiro-MeOTAD solution was spin-coated on the surface of the small molecule passivation layer, and the spin-coating speed was controlled to be 3800 rpm and the spin-coating time was 25 s to obtain a hole transport layer; S5 evaporates a silver electrode on the surface of the hole transport layer, and controls the evaporation thickness to be 100 nm and the evaporation rate to be no more than 1Å / s, to obtain a metal electrode layer.
[0036] Example 14: A method for preparing a ketone small molecule passivated perovskite solar cell disclosed in the present invention comprises the following steps: S1: The ITO conductive glass is ultrasonically cleaned in detergent, deionized water, ethanol, and isopropanol in sequence for 15 minutes, blown dry with nitrogen, and then subjected to plasma treatment with a plasma treatment power of 50 W and a plasma treatment time of 3 minutes to obtain a conductive substrate; Then configure SnO 2 Solution, SnO 2 SnO in solution 2 The concentration is 3.00wt%, and the solvent is water; Then, SnO is spin-coated on the surface of the conductive substrate. 2 solution, annealing, and controlling the spin coating speed to 2200 rpm, the spin time to 35 s, the annealing temperature to 160 ° C, and the annealing time to 35 min to obtain an electron transport layer; S2 pre-processes the electron transport layer with plasma, the plasma treatment power is 50W, and the plasma treatment time is 3min; Reconfiguration of CsI / PbI 2 solution and FAI / MACl solution, CsI / PbI 2 PbI in solution 2 The concentration is 1.6mmol / mL, and the CsI doping amount is 6.0mol%PbI 2 , the solvent is DMF and DMSO in a volume ratio of 10:1, the FAI concentration in the FAI / MACl solution is 100 mg / mL, the MACl dosage is 12 wt% FAI, and the solvent is isopropanol; Then spin-coat CsI / PbI on the surface of the electron transport layer. 2 The solution was annealed and the spin coating speed was controlled to be 1600 rpm, the spin coating time was 35 s, the annealing temperature was 80 °C, and the annealing time was 70 s to obtain CsI / PbI 2 film; Then on CsI / PbI 2 The surface of the film was spin-coated with FAI / MACl solution, annealed, and the spin-coating speed was controlled to be 1900 rpm, the spin-coating time was 35 s, the annealing temperature was 160 °C, the annealing time was 18 min, and the annealing environment was RH = 30~40% in air to obtain a perovskite light absorbing layer (FA x Cs 1-x PbI 3 ); S3 first prepares a ketone small molecule solution, wherein the ketone small molecule of the ketone small molecule solution is quinoline-4(1H)-one, the ketone small molecule concentration is 4 mmol / mL, and the solvent is isopropanol; A ketone small molecule solution is spin-coated on the surface of the perovskite light-absorbing layer, annealed, and the spin-coating speed is controlled to be 5200 rpm, the spin-coating time is 35 s, the annealing temperature is 80° C., and the annealing time is 70 s to obtain a small molecule passivation layer; S4 first prepares tBP solution and Li-TFSI solution, the tBP solution is analytical grade, the Li-TFSI concentration in the Li-TFSI solution is 550 mg / mL, and the solvent is acetonitrile; Prepare a Spiro-MeOTAD solution, wherein the concentration of Spiro-MeOTAD in the Spiro-MeOTAD solution is 75.0 mg / mL, the solvent is chlorobenzene, and 30.0 μL of tBP solution and 20.0 μL of Li-TFSI solution are added to each mL of the Spiro-MeOTAD solution; Then, the Spiro-MeOTAD solution was spin-coated on the surface of the small molecule passivation layer, and the spin-coating speed was controlled to be 4200 rpm and the spin-coating time was 35 s to obtain a hole transport layer; S5 evaporates a silver electrode on the surface of the hole transport layer, and controls the evaporation thickness to be 120 nm and the evaporation rate to be no more than 1 Å / s, to obtain a metal electrode layer. Comparative Example
[0037] Comparative Example 1: A method for preparing a ketone small molecule passivated perovskite solar cell disclosed in the present invention, which is different from Example 1 in that S3 is not included.
[0038] Comparative Example 2 is a method for preparing a ketone small molecule passivated perovskite solar cell disclosed in the present invention, which is different from Example 1 in that, in S3, pure isopropanol is used instead of the ketone small molecule solution. Performance testing
[0039] The perovskite solar cells of Examples 1-8 and Comparative Examples 1-2 were respectively subjected to photoelectric response tests under the AM1.5G solar spectrum. The test results are shown in Table 1.
[0040] Table 1 <![CDATA[J SC (mA / cm) 2 )]]> <![CDATA[V OC (V)]]> FF(%) PCE (%) Example 1 24.82 1.126 79.30 22.16 Example 2 24.76 1.124 79.46 22.11 Example 3 25.04 1.130 80.78 22.86 Example 4 25.03 1.126 80.31 22.62 Example 5 25.19 1.143 80.07 23.05 Example 6 24.86 1.120 78.32 21.81 Example 7 24.46 1.121 80.03 21.94 Example 8 24.54 1.118 78.30 21.48 Comparative Example 1 24.59 1.119 78.73 21.67 Comparative Example 2 24.49 1.120 77.96 21.38 In addition, from Figures 2~4 It can be seen that the efficiency of perovskite solar cells after QLO and ADO passivation has been improved, among which QLO has a better effect, and the passivated device has achieved a photoelectric conversion efficiency of 23.05%; this type of molecular passivation will not significantly affect the crystallinity of perovskite, but it has a greater impact on the surface morphology of the upper interface. QLO tends to fill the grain boundaries of perovskite, while ADO tends to gather on the surface of perovskite.
[0041] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the purpose and scope of the technical solution of the present invention, which should be included in the scope of the claims of the present invention.
Claims
1. A method for preparing a ketone small molecule passivated perovskite solar cell, characterized in that: The following steps are included: S1: Spin-coat SnO2 solution on the surface of the conductive substrate and anneal to obtain an electron transport layer; S2: sequentially spin-coating CsI / PbI2 solution and FAI / MACl solution on the surface of the electron transport layer, and annealing them after spin-coating to obtain a perovskite light absorbing layer; S3: spin coating a ketone small molecule solution on the surface of the perovskite light absorbing layer, wherein the ketone small molecule is one or a combination of quinoline-4(1H)-one, quinoline-2(1H)-one, 2-aminoquinoline-4(1H)-one, acridine-9(10H)-one, 6,7-dimethoxyquinoline-4(1H)-one, and 6-methoxyquinoline-4(1H)-one, and annealing to obtain a small molecule passivation layer; S4, spin coating the Spiro-MeOTAD solution on the surface of the small molecule passivation layer to obtain a hole transport layer; S5: evaporating a silver electrode on the surface of the hole transport layer to obtain a metal electrode layer.
2. The method for preparing a ketone small molecule passivated perovskite solar cell according to claim 1, characterized in that: In the step S2, the electron transport layer is preliminarily subjected to plasma treatment, the plasma treatment power is 40-50 W, and the plasma treatment time is 2-3 min.
3. The method for preparing a ketone small molecule passivated perovskite solar cell according to claim 1, characterized in that: In the S2, the PbI2 concentration in the CsI / PbI2 solution is 1.4-1.6 mmol / mL, the CsI doping amount is 4.0-6.0 mol% PbI2, and the solvent is DMF and DMSO in a volume ratio of 8-10:
1.
4. The method for preparing a ketone small molecule passivated perovskite solar cell according to claim 3, characterized in that: In the S2, the spin coating speed of the CsI / PbI2 solution is controlled to be 1400-1600 rpm, the spin coating time is 25-35 s, the annealing temperature is 60-80°C, and the annealing time is 50-70 s.
5. The method for preparing a ketone small molecule passivated perovskite solar cell according to claim 1, characterized in that: In the S2, the FAI concentration in the FAI / MACl solution is 80-100 mg / mL, the MACl dosage is 8-12 wt% FAI, and the solvent is isopropanol.
6. The method for preparing a ketone small molecule passivated perovskite solar cell according to claim 5, characterized in that: In the S2, the spin coating speed of the FAI / MACl solution is controlled to be 1700-1900 rpm, the spin coating time is 25-35 s, the annealing temperature is 140-160° C., the annealing time is 12-18 min, and the annealing environment is in air at RH=30-40%.
7. The method for preparing a ketone small molecule passivated perovskite solar cell according to claim 1, characterized in that: In S3, the ketone small molecule concentration of the ketone small molecule solution is 4-16 mmol / mL, and the solvent is isopropanol.
8. The method for preparing a ketone small molecule passivated perovskite solar cell according to claim 7, characterized in that: In S3, the spin coating speed is controlled to be 4800-5200 rpm, the spin coating time is controlled to be 25-35 s, the annealing temperature is controlled to be 60-80° C., and the annealing time is controlled to be 50-70 s.
9. The method for preparing a ketone small molecule passivated perovskite solar cell according to claim 1, characterized in that: In S4, the concentration of Spiro-MeOTAD in the Spiro-MeOTAD solution is 70.0-75.0 mg / mL, and the solvent is chlorobenzene.
10. The method for preparing a ketone small molecule passivated perovskite solar cell according to claim 9, characterized in that: In the S4, 25.0-30.0 μL / mL of tBP solution and 15.0-20.0 μL / mL of Li-TFSI solution are pre-doped into the Spiro-MeOTAD solution, and the Li-TFSI concentration in the Li-TFSI solution is 500-550 mg / mL, and the solvent is acetonitrile.