Preparation method of perovskite solar cell and perovskite solar cell

Abstract

The invention discloses a preparation method of a perovskite solar cell and the perovskite solar cell. The preparation method comprises the following steps: preparing a hole transport layer on a transparent conductive substrate; preparing a perovskite absorption layer on the hole transport layer; a passivation layer is prepared on the perovskite absorption layer through a passivation precursor solution, and the passivation precursor solution comprises amido, halide ions and any one or more of the following groups: thiazolyl, imidazolyl and thienyl; and preparing an electron transport layer on the passivation layer. According to the preparation method, the passivation layer is additionally arranged between the perovskite absorption layer and the electron transmission layer, the passivation layer can repair interface defects of the perovskite absorption layer, C60 is prevented from making contact with the perovskite absorption layer, and the photoelectric conversion efficiency of the trans-structure p-i-n perovskite solar cell is effectively improved.

Description

Technical Field

[0001] The invention relates to a preparation method of a perovskite solar cell and a perovskite solar cell. Background Art

[0002] For trans-structured pin perovskite solar cells, the perovskite absorption layer is generally selected to contain Pb 2+ The electron transport layer formed directly on the perovskite absorption layer can be prepared by using a compound of formamidinium ion and halogen ion. 60 (Fullerene

[60] , also known as footballene) preparation. However, due to C 60 With Pb 2+ The interface contact of the perovskite absorption layer formed by the compound of formamidinium ion and halogen ion, C 60 The interaction with the perovskite absorption layer forms additional trap states at the interface of the perovskite absorption layer and produces a large number of lattice defects, which promotes the generation of lower energy charge transfer states, all of which are not conducive to electron transport, resulting in a decrease in the photoelectric conversion efficiency of the inverted structure pin perovskite solar cells. Summary of the invention

[0003] In view of this, the present invention provides a method for preparing a perovskite solar cell and a perovskite solar cell. The preparation method adds a passivation layer between the perovskite absorption layer and the electron transport layer. The passivation layer can repair the interface defects of the perovskite absorption layer to avoid C 60 Contact with the perovskite absorption layer to effectively improve the photoelectric conversion efficiency of the trans-structured pin perovskite solar cell.

[0004] In order to solve the above technical problems, the present invention provides the following technical solutions:

[0005] In a first aspect, the present invention provides a method for preparing a perovskite solar cell, comprising:

[0006] Step 1: preparing a hole transport layer on a transparent conductive substrate;

[0007] Step 2, preparing a perovskite absorption layer on a side of the hole transport layer away from the transparent conductive substrate;

[0008] Step 3, preparing a passivation layer on the side of the perovskite absorption layer away from the hole transport layer using a passivation precursor solution, wherein the passivation precursor solution includes an amine group, a halogen ion, and any one or more of the following groups: a thiazolyl group, an imidazole group, and a thienyl group;

[0009] Step 4: preparing an electron transport layer on a side of the passivation layer away from the perovskite absorption layer.

[0010] In a second aspect, an embodiment of the present invention provides a perovskite solar cell, comprising:

[0011] Transparent conductive substrate;

[0012] A hole transport layer disposed on the main surface of the transparent conductive substrate;

[0013] A perovskite absorption layer stacked on the hole transport layer and away from the transparent conductive substrate;

[0014] A passivation layer stacked on the perovskite absorption layer and away from the hole transport layer, wherein the passivation layer includes an amine group, a halogen ion, and any one or more of the following groups: a thiazolyl group, an imidazole group, and a thienyl group;

[0015] An electron transport layer is stacked on the passivation layer and is away from the perovskite absorption layer.

[0016] The technical solution of the first aspect of the above invention has the following advantages or beneficial effects:

[0017] The technical solution provided by the embodiment of the present invention introduces a passivation layer including any one or more groups of thiazolyl, imidazole and thiophene, as well as amine groups and halogen ions between the perovskite absorption layer and the electron transport layer. Any one or more groups of thiazolyl, imidazole and thiophene in the passivation layer can bond with various elements (such as Pb, formamidine, halogen, etc.) in the perovskite absorption layer, and can fill the uncoordinated defects on the interface of the perovskite absorption layer. The amine group in the passivation layer can bond with the halogen of the perovskite absorption layer. The halogen ions in the passivation layer fill the halogen vacancies in the halogen salt in the perovskite absorption layer, so that various vacancies and defects on the interface of the perovskite absorption layer are filled by the passivation layer, and can have better energy level matching with the perovskite absorption layer. Therefore, the passivation layer can repair the interface defects of the perovskite absorption layer and avoid C 60 Contact with the perovskite absorption layer to effectively improve the photoelectric conversion efficiency of the trans-structured pin perovskite solar cell.

[0018] In addition, any one or more groups among thiazolyl, imidazole and thiophene, amines and halogen ions can interact with perovskite at the same time to achieve the tiling of various functional groups or ions in the passivation layer and avoid vertical stacking, thereby avoiding the increase of the distance between the perovskite absorption layer and the electron transport layer, reducing the interface resistance of the perovskite absorption layer and improving the electron transport performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a schematic diagram of the main process of the method for preparing a perovskite solar cell provided by an embodiment of the present invention;

[0020] Figure 2 is a schematic diagram of structural changes corresponding to the preparation method provided in an embodiment of the present invention;

[0021] Figure 3 is a schematic structural diagram of a solar cell provided by an embodiment of the present invention;

[0022] Figure 4 is a comparison diagram of the JV curve of Example 1 provided in the embodiment of the present invention and the JV curves of Comparative Examples 1 and 2;

[0023] Figure 5 is a comparison diagram of the JV curve of Example 2 provided in the embodiment of the present invention and the JV curves of Comparative Examples 1 and 2;

[0024] Figure 6 is a comparison diagram of the JV curve of Example 3 provided in the embodiment of the present invention and the JV curves of Comparative Examples 1 and 2;

[0025] Figure 7 It is a stability test comparison chart of Example 1, Example 2 and Example 3 provided in the embodiments of the present invention and Comparative Example 1.

[0026] The reference numerals are as follows:

[0027] 10-transparent conductive substrate; 20-hole transport layer; 30-perovskite absorption layer; 40-passivation layer; 50-electron transport layer; 51-C 60 Membrane layer; 52-barrier layer; 60-top electrode. DETAILED DESCRIPTION

[0028] Inverse structure (pin) perovskite cells have shown broad application prospects due to their advantages such as high efficiency, simple preparation process, low-temperature preparation, no obvious hysteresis effect, good stability and perfect compatibility with stacking. They are the mainstream technology for low-cost and high-efficiency solar cells in the future.

[0029] Since fullerene (C 60 ) has become the material of choice for the electron transport layer of inverse structure (pin) perovskite cells due to its cost-effectiveness, excellent stability, and scalable manufacturing capability via thermal evaporation. 60 Direct contact will cause the perovskite absorption layer to 60 Energy level mismatch forms new contact defects and additional trap states at the contact interface. The new contact defects and the defects in the perovskite absorption layer itself will cause electron recombination, and the additional trap states will reduce the electron recombination energy, resulting in the perovskite absorption layer and C 60The contact interface of the perovskite absorber layer and the C 60 The energy interaction between them promotes the generation of lower energy charge transfer states and causes electrostatic changes on the surface of the perovskite absorber layer, which in turn triggers the generation of C 60 The influence of widening of the lowest unoccupied molecular orbital state density. In addition, the escape of organic cations and migration of halogen ions in the perovskite absorption layer and further oxidation will cause a large number of lattice defects. The uncoordinated Pb ions in the perovskite absorption layer lead to non-radiative recombination at the interface of the perovskite-charge transport layer, which limits the photovoltage and fill factor (FF). These defects make perovskites extremely sensitive to the external environment (humidity, heat, light or oxygen), which greatly affects the long-term stability of perovskite devices.

[0030] At present, there are some interface passivation materials used between the perovskite absorption layer and the electron transport layer, such as phenylethylamine halide salt, propylenediamine iodine and ethylenediamine iodine, etc. Although these interface passivation materials can effectively compensate for interface halogen vacancies and organic cation vacancies, thereby reducing the interface defect density, the ligands of these interface passivation materials are bound to a single active site of the perovskite absorption layer, which will produce a dense accumulation of interface passivation materials perpendicular to the surface on the surface of the perovskite absorption layer. The dense accumulation of interface passivation materials perpendicular to the surface will introduce unnecessary resistance barriers between the perovskite absorption layer and the electron transport layer (ETL), increasing the interface resistance and being unfavorable for electron transport. Therefore, how to simultaneously fix the organic anions, halogen ions and coordinated Pb ions on the surface of the perovskite absorption layer and enhance the transport capacity of electrons to the electron transport layer is of great significance for improving the efficiency and stability of trans-structured perovskite solar cells. The embodiment of the present invention provides a method for preparing a perovskite solar cell and a perovskite solar cell to improve the efficiency and stability of trans-structured perovskite solar cells.

[0031] in, Figure 1 A schematic diagram showing the main process of a method for preparing a perovskite solar cell provided by an embodiment of the present invention; Figure 2 A schematic diagram of the structural changes corresponding to the preparation method is shown.

[0032] Specifically, Figure 1 As shown, the method for preparing a perovskite solar cell provided by an embodiment of the present invention may include the following steps:

[0033] Step S101 : preparing a hole transport layer 20 on a transparent conductive substrate 10 .

[0034] The transparent conductive substrate 10 may be FTO transparent glass (FTO-doped SnO 2Transparent conductive glass), ITO transparent glass (containing indium oxide (In 2 O 3 ) and tin oxide (SnO 2 ) etc. In addition, the transparent conductive substrate 10 can be a hard material or a flexible material.

[0035] Specifically, in this step, a self-assembled monolayer (SAMs) precursor solution can be coated (spin coated or spray coated) on the transparent conductive substrate 10 and annealed, wherein the SAMs precursor solution is formed by dissolving self-assembled molecules forming SAMs in an alcohol or benzene solvent, and the self-assembled molecules may include at least one of MeO-4PACz ([4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid), MeO-2PACz ([2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid), Me-4PACz ((4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid) and 2PACz ([2-(9H-carbazole-9-yl)ethyl]phosphonic acid)). In addition, the concentration of the self-assembling molecules in the SAMs precursor solution used to prepare the hole transport layer 20 can be 0.1 mg / mL to 3.0 mg / mL. For example, the concentration of the self-assembling molecules in the SAMs precursor solution can be 0.1 mg / mL, 0.5 mg / mL, 0.8 mg / mL, 1.0 mg / mL, 1.5 mg / mL, 1.8 mg / mL, 2.0 mg / mL, 2.5 mg / mL, 2.8 mg / mL or 3.0 mg / mL, etc.

[0036] Further, the annealing temperature of this step can be controlled at 40°C to 120°C, and the annealing time can be 3 min to 15 min. For example, the annealing temperature of this step can be 40°C, 50°C, 60°C, 70°C, 75°C, 80°C, 85°C, 90°C, 95°C, 100°C, 110°C or 120°C, etc., and for another example, the annealing time can be 3 min, 5 min, 10 min, 12 min or 15 min, etc. Preferably, the annealing temperature of this step is 90°C to 120°C. The annealing time can be effectively reduced by increasing the annealing temperature.

[0037] The structural changes after this step are as follows Figure 2 shown.

[0038] Step S102 : preparing a perovskite absorption layer 30 on a side of the hole transport layer 20 away from the transparent conductive substrate 10 .

[0039] The specific implementation of the step of preparing the perovskite absorption layer 30 is mainly to coat (spin coat or spray coat) the perovskite precursor solution containing formamidine, methylamine, lead ions, cesium ions and halogen ions on the hole transport layer 20, and sequentially perform anti-solvent treatment and annealing treatment. Specifically, the structure of the perovskite absorption layer 30 is generally ABX 3 , A can be Cs, Rb, FA, MA, etc., B can be Pb, Sn, etc., X can be I, Br, Cl, etc., preferably, the perovskite absorption layer 30 is Cs 0.05 (FA 0.98 MA 0.02 ) 0.95 Pb(I 0.98 Br 0.02 ) 3 The solvent used for the anti-solvent treatment is generally chlorobenzene. The temperature of the annealing treatment is generally 100°C to 150°C. For example, the temperature of the annealing treatment in this step can be 100°C, 110°C, 120°C, 130°C, 140°C or 150°C.

[0040] The order of coating the perovskite precursor solution and anti-solvent treatment in this step is generally as follows: in the first stage, the perovskite precursor solution is first coated on the hole transport layer 20 at a certain coating rate (such as spin coating at a speed of 1000 rpm), and then enters the second stage, the coating rate is increased and the perovskite precursor solution is continued to be coated, and after the perovskite precursor solution is coated for a certain time (such as 20 seconds (s)), the anti-solvent is added to the coated perovskite precursor solution. Among them, the coating rate and the coating time of each stage can be adjusted according to demand, and it is only necessary to ensure that the coating rate of the second stage is greater than the coating rate of the first stage. After this step, the corresponding structural changes are as follows: Figure 2 shown.

[0041] Step S103: preparing a passivation layer 40 on the side of the perovskite absorption layer 30 away from the hole transport layer 20 using a passivation precursor solution, wherein the passivation precursor solution includes an amine group, a halogen ion, and any one or more of the following groups: a thiazolyl group, an imidazole group, and a thienyl group.

[0042] The interface vacancies or interface defects of the perovskite absorption layer 30 are filled by any one or more groups of thiazolyl, imidazole and thiophene, amine and halogen ions. Specifically, any one or more groups of thiazolyl, imidazole and thiophene in the passivation precursor solution can be combined with the structure ABX on the interface of the perovskite absorption layer 30. 3 The B (such as Pb or Sn) in the passivation precursor solution interacts with the ABX 3In addition, the halogen ions in the passivation precursor solution can fill the halogen vacancies in the structure on the interface of the perovskite absorption layer 30. Filling the structural defects on the interface of the perovskite absorption layer 30 can effectively reduce the influence of the interface defects of the perovskite absorption layer 30 on the carrier transport, thereby effectively improving the carrier transport. Furthermore, since any one or more groups of thiazolyl, imidazole and thienyl, amine and halogen ions in the passivation precursor solution can bond with various elements (such as Pb, formamidine, halogen, etc.) in the perovskite absorption layer 30 (the bonding is the intermolecular force), the molecules of the passivation layer 40 are laid flat on the interface of the perovskite absorption layer 30, avoiding the vertical accumulation of the molecules of the passivation layer 40 and introducing unnecessary interface barriers, which helps to improve the carrier transport. Moreover, any one or more of the thiazolyl, imidazole and thiophene groups can attract electrons to migrate to the electron transport layer 50, and can block the hole carriers in the perovskite absorption layer 30 from being transmitted to the electron transport layer 50, which can effectively reduce carrier recombination and improve electron transport efficiency, improve photoelectric conversion efficiency, and improve battery stability.

[0043] Furthermore, by providing the passivation layer 40, the perovskite absorption layer 30 is physically isolated from the C 60 The formed electron transport layer 50 contacts the perovskite absorption layer 30, thereby preventing the perovskite absorption layer 30 from contacting the C 60 The interaction forms additional trap states and avoids the titanium ore absorber layer 30 and C 60 The interaction produces compound losses and can also avoid C 60 The problem of broadening of the lowest unoccupied molecular orbital (LUMO) density of states occurs.

[0044] More specifically, in this step, the passivation precursor solution is coated on the perovskite absorption layer 30, and dried or annealed. The solution concentration of the passivation precursor solution is generally 0.1-10 mg / mL. For example, the concentration of the thiazolylamine halide and / or imidazole amine halide and / or thienylamine halide contained in the passivation precursor solution can be 0.1 mg / mL, 0.5 mg / mL, 1.0 mg / mL, 1.5 mg / mL, 2.0 mg / mL, 2.5 mg / mL, 3.0 mg / mL, 3.5 mg / mL, 4.0 mg / mL, 4.5 mg / mL, 5.0 mg / mL, 5.5 mg / mL, 6.0 mg / mL, 6.5 mg / mL, 7.0 mg / mL, 8.0 mg / mL, 8.5 mg / mL, 9.0 mg / mL or 10 mg / mL, etc. Preferably, the solution concentration of the passivation precursor solution is 1.0 mg / mL. It can be understood that the concentration of the thiazolylamine halide and / or imidazolylamine halide and / or thienylamine halide contained in the passivation precursor solution means that when the passivation precursor solution is formed by dissolving a thiazolylamine halide in a solvent, the concentration refers to the concentration of the thiazolylamine halide in the passivation precursor solution; when the passivation precursor solution is formed by dissolving an imidazolylamine halide in a solvent, the concentration refers to the concentration of the imidazolylamine halide in the passivation precursor solution; when the passivation precursor solution is formed by dissolving a thienylamine halide in a solvent, the concentration is Refers to the concentration of thiophenylamine halide in the passivation precursor solution; in the case where the passivation precursor solution is formed by dissolving thiozolylamine halide and imidazolylamine halide in a solvent, the concentration refers to the sum of the concentration of thiozolylamine halide and the concentration of imidazolylamine halide in the passivation precursor solution; in the case where the passivation precursor solution is formed by dissolving thiozolylamine halide, imidazolylamine halide and thiophenylamine halide in a solvent, the concentration refers to the sum of the concentration of thiozolylamine halide, imidazolylamine halide and thiophenylamine halide in the passivation precursor solution. Among them, in the case where the passivation precursor solution contains at least two salts of thiozolylamine halide, imidazolylamine halide and thiophenylamine halide, the at least two salts can be in any proportion, and it is only necessary to ensure the concentration of the passivation precursor solution.

[0045] The specific treatment method for drying the passivation precursor solution coated on the perovskite absorption layer 30 is to place the passivation precursor solution on the perovskite absorption layer 30 for drying under a 20°C to 40°C environment after the passivation precursor solution is coated on the perovskite absorption layer 30. That is, the drying temperature of the drying treatment is generally 20°C to 40°C, for example, the drying temperature may be 20°C, 25°C, 30°C, 35°C or 40°C. Preferably, the drying treatment dries the passivation precursor solution coated on the perovskite absorption layer 30 at room temperature. After the drying treatment, the annealing treatment may be omitted, and the process directly proceeds to step S104.

[0046] In addition, in the case of annealing the coated passivation precursor solution in this step, the annealing temperature may be 40°C to 120°C, and the annealing time may be 3min to 15min. For example, the annealing temperature may be 40°C, 50°C, 60°C, 65°C, 70°C, 80°C, 90°C, 100°C, 110°C or 120°C, etc. The annealing time may be 3min, 5min, 8min, 10min, 12min or 15min, etc.

[0047] Furthermore, in the case where the passivation precursor solution is coated on the perovskite absorption layer 30 by spin coating in this step, the spin coating speed is generally 2000 rpm to 5000 rpm, and the spin coating time is generally controlled within 20s to 40s. For example, the spin coating speed may be 2000 rpm, 2500 rpm, 3000 rpm, 3500 rpm, 4000 rpm, 4500 rpm or 5000 rpm, etc. The spin coating time may be 20s, 25s, 30s, 35s or 40s, etc.

[0048] The solvent in the passivation precursor solution includes one or more of the following solvents: ethanol, methanol, isopropanol and chlorobenzene.

[0049] Preferably, the passivation precursor solution comprises amine groups, halogen ions and thiazole groups, which are generally derived from the same compound.

[0050] Furthermore, in the case where the passivation precursor solution contains thiazolyl, the passivation precursor solution can be formed by dissolving any one or more of the following thiazolylamine halide salts in an alcohol or benzene solvent:

[0051] Thiazol-2-ylmethylamine hydrochloride, thiazol-2-ylmethylamine hydroiodide, thiazol-2-ylmethylamine hydrobromide, (4-bromothiazol-2-yl)methylamine hydrochloride, (4-bromothiazol-2-yl)methylamine hydroiodide, (4-bromothiazol-2-yl)methylamine hydrobromide, (5-bromothiazol-2-yl)methylamine hydrochloride, (5-bromothiazol-2-yl)methylamine hydroiodide, benzo[d]thiazol- 2-ylmethylamine hydrobromide, (4-methylthiazol-2-yl)methylamine hydrochloride, (4-methylthiazol-2-yl)methylamine hydroiodide, (4-methylthiazol-2-yl)methylamine hydrobromide, (5-bromobenzo[d]thiazol-2-yl)methylamine hydrochloride, (5-bromobenzo[d]thiazol-2-yl)methylamine hydroiodide and (5-bromobenzo[d]thiazol-2-yl)methylamine hydrobromide.

[0052] Wherein, for the case where the passivation precursor solution contains the above-mentioned multiple thiazolylamine halide salts, the ratio between the multiple thiazolylamine halide salts in the passivation precursor solution can be any ratio, and it is only necessary to ensure that the total concentration of the multiple thiazolylamine halide salts contained in the passivation precursor solution is within the range of 0.1mg / mL to 10mg / mL. For example, the total concentration of the multiple thiazolylamine halide salts contained in the passivation precursor solution can be 0.1mg / mL, 0.5mg / mL, 1.0mg / mL, 1.5mg / mL, 2.0mg / mL, 2.5mg / mL, 3.0mg / mL, 3.5mg / mL, 4.0mg / mL, 4.5mg / mL, 5.0mg / mL, 5.5mg / mL, 6.0mg / mL, 6.5mg / mL, 7.0mg / mL, 8.0mg / mL, 8.5mg / mL, 9.0mg / mL or 10mg / mL, etc.

[0053] Preferably, the passivation precursor solution is formed by dissolving thiazol-2-ylmethylamine hydrochloride in an alcohol or benzene solvent.

[0054] The above-mentioned thiazolylamine halide salts have a relatively good energy level match with the perovskite absorption layer 30. In addition, these thiazolylamine halide salts can make the molecules in the formed passivation layer 40 spread flat on the perovskite absorption layer 30, avoiding the passivation layer 40 from forming vertical molecular stacking on the perovskite absorption layer 30. Therefore, the introduction of the passivation layer 40 can still maintain a relatively low potential barrier between the perovskite absorption layer 30 and the electron transport layer 50 to ensure carrier transport.

[0055] In the case where the passivation precursor solution contains an imidazole group or a thienyl group, the passivation precursor solution can be formed by dissolving any one or more of the following imidazole halide salts or thienylamine halide salts in an alcohol or benzene solvent:

[0056] 4-fluorothiophene hydrochloride, 3-(aminomethyl)thiophene hydrochloride, 2-aminomethyl-5-bromothiophene hydrochloride, 4-bromo-2-aminomethylthiophene hydrochloride, 2-aminoimidazole hydrochloride, 2-aminomethylimidazole hydrochloride, 2-methyl-6-aminobenzimidazole hydrochloride, 2-amino-4-bromo-1-methylimidazole hydrochloride, and the like.

[0057] The thickness of the passivation layer 40 prepared in this step is 1 nm to 5 nm. For example, the thickness of the passivation layer 40 can be 1 nm, 2 nm, 3 nm, 4 nm or 5 nm.

[0058] The structural changes corresponding to the above step S103 are as follows: Figure 2 shown.

[0059] Step S104 : preparing an electron transport layer 50 on a side of the passivation layer 40 away from the perovskite absorption layer 30 .

[0060] This step is specifically implemented by evaporating C on the side of the passivation layer 40 away from the perovskite absorption layer 30. 60 Film layer 51, and in C 60 A barrier layer 52 is deposited on the side of the film layer 51 away from the passivation layer 40, wherein the barrier layer 52 is generally formed by evaporation of bathocuproine (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, BCP). The specific evaporation conditions can adopt the existing conditions and are not described here. The structural changes corresponding to step S104 are as follows Figure 2 shown.

[0061] Furthermore, if Figure 1 As shown, after the above step S104, a step S105 is also included: evaporating the top electrode 60 on the electron transport layer 50. The structural changes corresponding to the step S105 are as follows Figure 2 shown.

[0062] In summary, the method for preparing a perovskite solar cell with an inverted structure (pin) provided in the above embodiment introduces a passivation layer 40 between the perovskite absorption layer 30 and the electron transport layer 50, and the passivation layer 40 fills the interface vacancies or interface defects of the perovskite absorption layer 30 through any one or more groups of thiazolyl, imidazole and thiophene, amine groups and halogen ions, thereby reducing the interface and carrier recombination. Further, the passivation layer 40 is bonded to various elements (such as Pb, formamidine, halogen, etc.) in the perovskite absorption layer 30 through any one or more groups of thiazolyl, imidazole and thiophene, amine groups and halogen ions (the bonding is the intermolecular force), so that the molecules of the passivation layer 40 are laid flat on the interface of the perovskite absorption layer 30, avoiding the vertical accumulation of the molecules of the passivation layer 40 to introduce unnecessary interface barriers, thereby ensuring the carrier transmission capacity.

[0063] In addition, any one or more groups among thiazolyl, imidazole and thiophene can attract electrons to migrate to the electron transport layer 50, and can block the hole carriers in the perovskite absorption layer 30 from being transmitted to the electron transport layer 50. The filling of the above vacancies or interface defects, the avoidance of vertical stacking of molecules to introduce unnecessary interface barriers, and any one or more groups among thiazolyl, imidazole and thiophene attracting electrons to migrate to the electron transport layer 50 can effectively reduce carrier recombination and improve electron transport efficiency, thereby improving photoelectric conversion efficiency and battery stability.

[0064] Furthermore, by introducing a passivation layer 40 between the perovskite absorption layer 30 and the electron transport layer 50, the perovskite absorption layer 30 and the electron transport layer 50 are physically isolated, thereby avoiding the occurrence of lower energy charge transfer states at the interface and the formation of additional trap states at the interface due to the interaction between the electron transport layer 50 and the perovskite absorption layer 30, and avoiding the widening of the minimum unoccupied molecular orbital state density of the electron transport layer 50 caused by the electrostatic changes generated on the surface of the perovskite absorption layer, so as to further reduce carrier recombination and improve the electron transmission efficiency, photoelectric conversion efficiency and stability of the perovskite solar cell.

[0065] Furthermore, an embodiment of the present invention also provides a perovskite solar cell. The perovskite solar cell is prepared by the perovskite solar cell provided by the above embodiment.

[0066] Specifically, Figure 3 As shown, the perovskite solar cell may include:

[0067] A transparent conductive substrate 10;

[0068] A hole transport layer 20 disposed on a main surface of the transparent conductive substrate 10;

[0069] A perovskite absorption layer 30 stacked on the hole transport layer 20 and away from the transparent conductive substrate 10;

[0070] A passivation layer 40 is stacked on the perovskite absorption layer 30 and is away from the hole transport layer 20, wherein the passivation layer includes an amine group, a halogen ion, and any one or more of the following groups: a thiazolyl group, an imidazole group, and a thienyl group;

[0071] The electron transport layer 50 is stacked on the passivation layer 40 and is away from the perovskite absorption layer 30 .

[0072] Specifically, the perovskite absorption layer 30 includes formamidine, methylamine, lead ions, cesium ions, and halogen ions.

[0073] Specifically, the passivation layer 40 may include any one or more of the following materials:

[0074] Thiazol-2-ylmethylamine hydrochloride, thiazol-2-ylmethylamine hydroiodide, thiazol-2-ylmethylamine hydrobromide, (4-bromothiazol-2-yl)methylamine hydrochloride, (4-bromothiazol-2-yl)methylamine hydroiodide, (4-bromothiazol-2-yl)methylamine hydrobromide, (5-bromothiazol-2-yl)methylamine hydrochloride, (5-bromothiazol-2-yl)methylamine hydroiodide, benzo[d]thiazol-2-ylmethylamine hydrobromide, (4-methylthiazol-2-yl)methylamine hydrochloride, (4-methylthiazol-2-yl)methylamine hydroiodide, (4-methylthiazol- 2-aminomethylthiophene hydrochloride, (5-bromobenzo[d]thiazol-2-yl)methylamine hydrobromide, (5-bromobenzo[d]thiazol-2-yl)methylamine hydrochloride, (5-bromobenzo[d]thiazol-2-yl)methylamine hydroiodide, (5-bromobenzo[d]thiazol-2-yl)methylamine hydrobromide, 4-fluorothiophene hydrochloride, 3-(aminomethyl)thiophene hydrochloride, 2-aminomethyl-5-bromothiophene hydrochloride, 4-bromo-2-aminomethylthiophene hydrochloride, 2-aminoimidazole hydrochloride, 2-aminomethylimidazole hydrochloride, 2-methyl-6-aminobenzimidazole hydrochloride and 2-amino-4-bromo-1-methylimidazole hydrochloride.

[0075] The thickness of the passivation layer 40 is 1 nm to 5 nm. For example, the thickness of the passivation layer 40 can be 1 nm, 2 nm, 3 nm, 4 nm or 5 nm.

[0076] Furthermore, if Figure 3 As shown, the electron transport layer 50 may include: a stacked arrangement of C 60 The film layer 51 and the barrier layer 52, wherein C 60 The film layer 51 is located between the passivation layer 40 and the barrier layer 52 .

[0077] In the perovskite solar cell provided by the embodiment of the present invention, the passivation layer 40 located between the perovskite absorption layer 30 and the electron transport layer 50 fills the interface vacancies or interface defects of the perovskite absorption layer 30 through any one or more groups of thiazolyl, imidazole and thiophene, as well as amine groups and halogen ions, thereby reducing the interface and carrier recombination. Further, the passivation layer 40 is bonded to various elements (such as Pb, formamidine, halogen, etc.) in the perovskite absorption layer 30 through any one or more groups of thiazolyl, imidazole and thiophene, as well as amine groups and halogen ions (the bonding is the intermolecular force), so that the molecules of the passivation layer 40 are laid flat on the interface of the perovskite absorption layer 30, avoiding the vertical accumulation of the molecules of the passivation layer 40 to introduce unnecessary interface barriers, thereby ensuring the carrier transmission capacity. In addition, any one or more groups of thiazolyl, imidazole and thiophene can attract electrons to migrate to the electron transport layer 50, and can block the hole carriers in the perovskite absorption layer 30 from being transmitted to the electron transport layer 50. The filling of the above-mentioned vacancies or interface defects, the avoidance of vertical stacking of molecules to introduce unnecessary interface barriers, and the attraction of electrons to migrate to the electron transport layer 50 by any one or more of the thiazolyl, imidazole and thiophene groups can effectively reduce carrier recombination and improve electron transport efficiency, thereby improving the photoelectric conversion efficiency and the stability of the battery.

[0078] Furthermore, the passivation layer 40 between the perovskite absorption layer 30 and the electron transport layer 50 is used to physically isolate the perovskite absorption layer 30 and the electron transport layer 50, thereby avoiding the occurrence of lower energy charge transfer states and the formation of additional trap states at the interface due to the interaction between the electron transport layer 50 and the perovskite absorption layer 30, and avoiding the widening of the minimum unoccupied molecular orbital state density of the electron transport layer 50 caused by the electrostatic changes generated on the surface of the perovskite absorption layer, so as to further reduce carrier recombination and improve the electron transmission efficiency, photoelectric conversion efficiency and stability of the perovskite solar cell.

[0079] The following describes in detail the preparation process provided by the embodiments of the present invention and the performance comparison of the perovskite solar cells prepared in the embodiments and the comparative examples with several specific embodiments and corresponding comparative examples.

[0080] Embodiment 1:

[0081] Step A1: Ultrasonic cleaning of FTO conductive glass (fluorine-doped SnO) was performed using glass cleaning agent, deionized water, acetone, and anhydrous ethanol in sequence. 2 Transparent conductive glass), and then blow dry with a nitrogen gun.

[0082] Step A2: The FTO conductive glass treated in step A1 is treated under ultraviolet ozone conditions for 15 minutes.

[0083] Step A3: Prepare a SAMs hole transport layer on the FTO conductive glass treated in step A2.

[0084] The specific process of step A3 is as follows: MeO-4PACz is dissolved in isopropanol to obtain a 1 mmol / mL SAMs precursor solution, 50 μL of the precursor is spin-coated on the FTO conductive glass, wherein the spin coating speed is 3000 rpm, the spin coating time is 30 s, and then annealed on a hot plate at 100°C for 10 min to obtain a SAMs hole transport layer.

[0085] Step A4: Spin-coating a perovskite light absorbing layer on the SAMs hole transport layer processed in step A3.

[0086] The specific process of step A4 is: 836.7 mg PbI 2 , 277mg FAI, 3.7mg MABr, 13.0mg PbBr 2 , 22.5 mg CsI, and 18.1 mg MACl were dissolved in 1 mL DMF / DMSO (wherein the volume ratio of dimethyl sulfone (DMF) to dimethyl sulfoxide (DMSO) was 5:1), and stirred at room temperature until completely dissolved; the precursor solution was spin-coated onto the SAMs hole transport layer at a spin coating speed of 1000 rpm for 10 s and then at 5000 rpm for 30 s. In the second step of spin coating, 120 μL of anti-solvent chlorobenzene was added at the 20th second. After spin coating, the perovskite light absorption layer was annealed at a heating platform at 110 °C for 20 min to obtain the perovskite light absorption layer.

[0087] Step A5: preparing a passivation layer on the perovskite absorption layer obtained in step A4.

[0088] The specific process of step A5 is to dissolve thiazol-2-ylmethylamine hydrochloride in isopropanol to obtain a thiazol-2-ylmethylamine hydrochloride solution with a concentration of 0.5 mg / mL, and spin-coat 50 μL of the thiazol-2-ylmethylamine hydrochloride solution on the perovskite absorption layer at 4000 rpm for 30 seconds, followed by annealing on a heating stage at 100° C. for 10 minutes to obtain a passivation layer.

[0089] Step A6: preparing an electron transport layer on the passivation layer obtained in step A5.

[0090] The specific process of step A6 is as follows: evaporating a 20 nm thick C 60 Thin film, evaporation rate 0.5Å·s -1 ; in C 60A 6 nm thick BCP (Bathocuproine, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) barrier layer was evaporated on the film at a rate of 0.5 Å·s -1 .

[0091] Step A7: preparing a top electrode on the electron transport layer obtained in step A6.

[0092] Specifically, this step is performed under high vacuum (< 4 × 10 −6 A 100 nm Ag electrode was prepared on the electron transport layer by evaporation at 1.0 Å·s -1 , a trans-structure (pin) perovskite solar cell can be obtained.

[0093] Embodiment 2:

[0094] Compared with Example 1, the present embodiment differs in that: Step A5 is a process of preparing an interface passivation layer on the perovskite light absorbing layer, specifically:

[0095] Step A5, preparing an interface passivation layer on the perovskite film obtained in step A4; dissolving thiazol-2-ylmethylamine hydrochloride in isopropanol to obtain a thiazol-2-ylmethylamine hydrochloride solution with a concentration of 1.0 mg / mL, spin coating 50 μL of the thiazol-2-ylmethylamine hydrochloride solution on the perovskite film at 4000 rpm for 30 seconds, and then annealing on a heating table at 100° C. for 10 minutes to obtain an interface passivation layer;

[0096] Embodiment 3:

[0097] Compared with Example 2, the present embodiment differs in that: the process of preparing a passivation layer on the perovskite light absorbing layer in step A5 is specifically as follows: dissolving thiazol-2-ylmethylamine hydrochloride in isopropanol to obtain a thiazol-2-ylmethylamine hydrochloride solution with a concentration of 1.0 mg / mL, and spin-coating 50 μL of the thiazol-2-ylmethylamine hydrochloride solution on the perovskite absorption layer obtained in step A4 at a spin coating speed of 4000 rpm, and continuing the spin coating for 30 seconds. No annealing is required, and the passivation layer is obtained only by drying at room temperature.

[0098] Comparative Example 1:

[0099] The difference between Comparative Example 1 and Example 1 is that the process of preparing a passivation layer on the perovskite absorption layer in step A5 is omitted.

[0100] Comparative Example 2:

[0101] Compared with Example 1, Comparative Example 2 differs in that: Step A5 is a process for preparing a passivation layer on the perovskite absorption layer, specifically: dissolving propylenediamine iodine in isopropanol to obtain a propylenediamine iodine solution with a concentration of 1.0 mg / mL, spin coating 50 μL of the propylenediamine iodine solution on the perovskite absorption layer at 4000 rpm for 30 seconds, and then annealing on a heating table at 100° C. for 10 minutes to obtain the existing passivation layer.

[0102] The perovskite solar cells prepared in Example 1, Example 2, Example 3, Comparative Example 1 and Comparative Example 2 were all tested for photoelectric performance under a standard sunlight.

[0103] Table 1 below shows photovoltaic parameter data of perovskite solar cells prepared in Example 1 (0.5 mg / mL thiazol-2-ylmethylamine hydrochloride is spin-coated and annealed to form a passivation layer), Example 2 (1.0 mg / mL thiazol-2-ylmethylamine hydrochloride is spin-coated and annealed to form a passivation layer), Example 3 (1.0 mg / mL thiazol-2-ylmethylamine hydrochloride and no annealing is required to form a passivation layer), Comparative Example 1, and Comparative Example 2 (1.0 mg / mL propylenediamine iodide is spin-coated and annealed to form an existing passivation layer). Figure 4 A comparison diagram of the JV curve of Example 1 and the JV curves of Comparative Examples 1 and 2 is shown; Figure 5 A comparison diagram of the JV curve of Example 2 and the JV curves of Comparative Examples 1 and 2 is shown; Figure 6 A comparison diagram of the JV curve of Example 3 and the JV curves of Comparative Examples 1 and 2 is shown.

[0104]

[0105] From Table 1 above and Figures 4 to 6 It can be seen that the energy conversion efficiency (PCE) of the perovskite solar cell of comparative example 1 (without passivation layer) is 22.04%, and the energy conversion efficiency (PCE) of comparative example 2 (passivation layer prepared using propylenediamine iodine) increases to 23.55%. The improvement in the energy conversion efficiency of comparative example 2 is mainly attributed to the increase in open circuit voltage (Voc).

[0106] Compared with Comparative Examples 1 and 2, the open circuit voltage (Voc), short circuit current (Jsc), fill factor (FF) and power conversion efficiency (PCE) of Example 1, Example 2 and Example 3 are all improved to varying degrees.

[0107] Specifically, the energy conversion efficiency (PCE) of the perovskite solar cell of Example 1 (using 0.5 mg / mL thiazol-2-ylmethylamine hydrochloride and annealing to obtain a passivation layer) can reach 24.08%, which is more than 2% higher than that of Comparative Example 1 and more than 0.5% higher than that of Comparative Example 2. This is mainly attributed to the fact that thiazol-2-ylmethylamine hydrochloride can, on the one hand, passivate the uncoordinated Pb at the interface of the perovskite absorption layer and fix the ions on the lattice, thereby inhibiting the migration of delocalized ions; on the other hand, the interface electron-withdrawing thiazole groups can block the transfer of holes to C 60 Transport and promote electrons to C 60 migration, ultimately passivating the perovskite / C 60 Interface defects.

[0108] The energy conversion efficiency (PCE) of Example 2 (using 1 mg / mL thiazol-2-ylmethylamine hydrochloride and annealing to obtain a passivation layer) is further improved to 24.65%, which is more than 2.6% higher than that of Comparative Example 1, more than 1.1% higher than that of Comparative Example 2, and 0.5% higher than that of Example 1. Furthermore, it is 0.07V higher than that of Comparative Example 1 and 0.03V higher than that of Comparative Example 2. This is attributed to the increase in the concentration of thiazol-2-ylmethylamine hydrochloride in the passivation precursor solution, which increases the amount of thiazolyl, amine and halogen ions, and can further improve the passivation interface defects. In particular, the open circuit voltage of the perovskite solar cell is significantly increased (the open circuit voltage is increased from 1.136 V in Example 1 to 1.155 V in Example 2).

[0109] Example 3 (using 1 mg / mL thiazol-2-ylmethylamine hydrochloride and no annealing to obtain a passivation layer) can still obtain an energy conversion efficiency of 24.68%, and the open circuit voltage (VOC) is also increased to 1.160 V, which is equivalent to the energy conversion efficiency of Example 2, indicating that for thiazol-2-ylmethylamine hydrochloride, even if the annealing process is omitted, the performance of perovskite solar cells can be significantly improved.

[0110] Furthermore, from the short-circuit current (Jsc) and fill factor (FF) shown in Table 1 above, it can also be seen that the passivation layer formed by thiazol-2-ylmethylamine hydrochloride can effectively improve the short-circuit current (Jsc) and fill factor (FF) of the perovskite solar cell. Specifically, the fill factor of Example 1 is increased by 2.4% compared with Comparative Example 1 and by 1.3% compared with Comparative Example 2, and the open circuit voltage and short-circuit current are also improved to varying degrees. The fill factor of the perovskite solar cell prepared in Example 2 is increased by 2.5% compared with Comparative Example 1 and by 1.4% compared with Comparative Example 2; the open circuit voltage of the perovskite solar cell prepared in Example 2; the open circuit voltage of the perovskite solar cell prepared in Example 2 is increased by 0.4 mA / cm compared with Comparative Example 1.2 , compared with comparative example 2, it is increased by 0.2mA / cm 2 The fill factor of Example 3 is increased by 1.9% compared with that of Comparative Example 1 and by 0.8% compared with that of Comparative Example 2; the short-circuit current of Example 3 is increased by 0.5 mA / cm compared with that of Comparative Example 1. 2 , compared with comparative example 2, it is increased by 0.3mA / cm 2 .

[0111] In addition, compared with Comparative Examples 1 and 2, the above Table 1 and Figures 4 to 6 The improvement in the short-circuit current of the perovskite solar cells of Examples 1 to 3 shown can illustrate that the passivation contact performance of the perovskite solar cell prepared by the technical solution provided in the embodiment of the present invention is improved, and the technical solution provided in the embodiment of the present invention is beneficial to suppressing the interface defects and interface recombination of the perovskite absorption layer in the perovskite solar cell, thereby improving the carrier extraction ability of the perovskite solar cell and reducing the contact square resistance of the perovskite solar cell.

[0112] Compared with Comparative Example 1 and Comparative Example 2, the above Table 1 and Figures 4 to 6 The increase in the open circuit voltage of the perovskite solar cells of Examples 1 to 3 can illustrate that the technical solution provided by the embodiments of the present invention effectively improves the interface energy level of the perovskite absorption layer, making the energy level between the perovskite absorption layer and the electron transport layer more matched.

[0113] Generally speaking, the open circuit voltage, short circuit current, interface resistance of the perovskite solar cell and the resistance between strings of the photovoltaic module will affect the filling factor of the perovskite solar cell, and the interface resistance will affect the resistance between strings. From Table 1, we can see that compared with the open circuit voltage and short circuit current, the filling factor of the perovskite solar cells of Examples 1 to 3 will be more significantly improved, indicating that the filling factor of the perovskite solar cell produced by the technical solution provided in the embodiment of the present invention is affected by the interface resistance and the resistance between strings in addition to the open circuit voltage and short circuit current. Therefore, compared with Comparative Examples 1 and 2, the improvement of the filling factor of the perovskite solar cells of Examples 1 to 3 indicates that the technical solution provided in the embodiment of the present invention is conducive to reducing the interface resistance of the perovskite solar cell, and the perovskite solar cell is applied to the photovoltaic module, which is conducive to reducing the resistance between strings of the photovoltaic module.

[0114] Furthermore, by conducting stability tests on Comparative Example 1 and Examples 1, 2 and 3, it is found that Figure 7 As shown. Figure 7 It can be seen that the aging stability of perovskite solar cells based on thiazol-2-ylmethylamine hydrochloride passivation layer is significantly better than that of perovskite solar cells without passivation layer.

[0115] In summary, the open circuit voltage, short circuit current, fill factor energy conversion efficiency and stability of the perovskite solar cell prepared by the technical solution provided in the embodiment of the present invention are significantly improved.

[0116] The introduction provided in the above steps is only used to help understand the method, structure and core idea of ​​the present invention. For ordinary technicians in this technical field, without departing from the principle of the present invention, several improvements and modifications can be made to the present invention, and these improvements and modifications also belong to the scope of protection of the claims of the present invention.

Claims

1. A method for preparing a perovskite solar cell, characterized in that: include: Step 1: preparing a hole transport layer on a transparent conductive substrate; Step 2, preparing a perovskite absorption layer on a side of the hole transport layer away from the transparent conductive substrate; Step 3, preparing a passivation layer on the side of the perovskite absorption layer away from the hole transport layer using a passivation precursor solution, wherein the passivation precursor solution includes an amine group, a halogen ion, and any one or more of the following groups: a thiazolyl group, an imidazole group, and a thienyl group; Step 4: preparing an electron transport layer on a side of the passivation layer away from the perovskite absorption layer.

2. The method for preparing a perovskite solar cell according to claim 1, characterized in that: Step 1 comprises: coating a SAMs precursor solution on a transparent conductive substrate and performing an annealing treatment, wherein the SAMs precursor solution is formed by dissolving SAMs in an alcohol or benzene solvent, and the SAMs comprises at least one of MeO-4PACz, MeO-2PACz, Me-4PACz and 2PACz; And / or, the concentration of the self-assembling molecules in the precursor solution used to prepare the hole transport layer is 0.1 mg / mL to 3.0 mg / mL.

3. The method for preparing a perovskite solar cell according to claim 1, characterized in that: Step 2 comprises: coating a perovskite precursor solution containing formamidine, methylamine, lead ions, cesium ions and halide ions on the hole transport layer, and sequentially performing an anti-solvent treatment and an annealing treatment; and / or, Step 4 comprises: evaporating C on the passivation layer 60 film layer, and in the C 60 Vapor depositing a barrier layer on the film layer; and / or, After step 4, the method further includes: evaporating a top electrode on the electron transport layer.

4. The method for preparing a perovskite solar cell according to any one of claims 1 to 3, characterized in that: Step 3 includes: The passivation precursor solution is coated on the perovskite absorption layer, and then dried or annealed.

5. The method for preparing a perovskite solar cell according to any one of claims 1 to 3, characterized in that: The concentration of the thiazolylamine halide and / or imidazolylamine halide and / or thienylamine halide contained in the passivation precursor solution is 0.1 mg / mL to 10 mg / mL; and / or, In the case where the passivation precursor solution includes amine groups, halogen ions and thiazole groups, The passivation precursor solution is formed by dissolving any one or more of the following thiazolylamine halide salts in an alcohol or benzene solvent: Thiazol-2-ylmethylamine hydrochloride, thiazol-2-ylmethylamine hydroiodide, thiazol-2-ylmethylamine hydrobromide, (4-bromothiazol-2-yl)methylamine hydrochloride, (4-bromothiazol-2-yl)methylamine hydroiodide, (4-bromothiazol-2-yl)methylamine hydrobromide, (5-bromothiazol-2-yl)methylamine hydrochloride, (5-bromothiazol-2-yl)methylamine hydroiodide, benzo[d]thiazol- 2-ylmethylamine hydrobromide, (4-methylthiazol-2-yl)methylamine hydrochloride, (4-methylthiazol-2-yl)methylamine hydroiodide, (4-methylthiazol-2-yl)methylamine hydrobromide, (5-bromobenzo[d]thiazol-2-yl)methylamine hydrochloride, (5-bromobenzo[d]thiazol-2-yl)methylamine hydroiodide and (5-bromobenzo[d]thiazol-2-yl)methylamine hydrobromide.

6. The method for preparing a perovskite solar cell according to claim 4, characterized in that: For step 3 where spin coating is used, Step 3: The spin coating speed is 2000 rpm to 5000 rpm, and the spin coating time is 20 s to 40 s; and / or, In the case where step 3 includes annealing treatment, the annealing temperature is 40°C to 120°C, and the annealing time is 3min to 15min; or, When step 3 includes drying, the temperature of the drying is 20-40°C.

7. The method for preparing a perovskite solar cell according to claim 5, characterized in that: The solvent in the passivation precursor solution includes one or more of the following solvents: Ethanol, methanol, isopropanol and chlorobenzene.

8. A perovskite solar cell, characterized in that: include: A transparent conductive substrate (10); A hole transport layer (20) disposed on the main surface of the transparent conductive substrate (10); A perovskite absorption layer (30) stacked on the hole transport layer (20) and disposed on a side away from the transparent conductive substrate (10); A passivation layer (40) stacked on the perovskite absorption layer (30) and disposed on a side away from the hole transport layer (20), wherein the passivation layer (40) comprises an amine group, a halogen ion, and any one or more of the following groups: a thiazolyl group, an imidazole group, and a thienyl group; An electron transport layer (50) is stacked on the passivation layer (40) and is located away from the perovskite absorption layer (30).

9. The perovskite solar cell according to claim 8, characterized in that: The perovskite absorption layer (30) contains formamidine, methylamine, lead ions, cesium ions and halogen ions; and / or, The electron transport layer (50) comprises: a stacked arrangement of C 60 A membrane layer (51) and a barrier layer (52), wherein The C 60 The film layer (51) is located between the passivation layer (40) and the barrier layer (52); and / or, The passivation layer (40) comprises any one or more of the following materials: Thiazol-2-ylmethylamine hydrochloride, thiazol-2-ylmethylamine hydroiodide, thiazol-2-ylmethylamine hydrobromide, (4-bromothiazol-2-yl)methylamine hydrochloride, (4-bromothiazol-2-yl)methylamine hydroiodide, (4-bromothiazol-2-yl)methylamine hydrobromide, (5-bromothiazol-2-yl)methylamine hydrochloride, (5-bromothiazol-2-yl)methylamine hydroiodide, benzo[d]thiazol-2-ylmethylamine hydrobromide, (4-methylthiazol-2-yl)methylamine hydrochloride, (4-methylthiazol-2-yl)methylamine hydroiodide, (4-methylthiazol- 2-aminomethylthiophene hydrochloride, (5-bromobenzo[d]thiazol-2-yl)methylamine hydrobromide, (5-bromobenzo[d]thiazol-2-yl)methylamine hydrochloride, (5-bromobenzo[d]thiazol-2-yl)methylamine hydroiodide, (5-bromobenzo[d]thiazol-2-yl)methylamine hydrobromide, 4-fluorothiophene hydrochloride, 3-(aminomethyl)thiophene hydrochloride, 2-aminomethyl-5-bromothiophene hydrochloride, 4-bromo-2-aminomethylthiophene hydrochloride, 2-aminoimidazole hydrochloride, 2-aminomethylimidazole hydrochloride, 2-methyl-6-aminobenzimidazole hydrochloride and 2-amino-4-bromo-1-methylimidazole hydrochloride.

10. The perovskite solar cell according to claim 8 or 9, characterized in that: The thickness of the passivation layer (40) is 1 nm to 5 nm.

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