Incident particle flux distribution calculation method, device, equipment and medium

Abstract

The invention relates to the technical field of deposition processes, and provides an incident particle flux distribution calculation method and device, equipment and a medium, and the method comprises the steps: obtaining the structure information of a to-be-deposited object; according to the structure information, determining the position coordinates of an incident particle emission source and the range of an incident angle; discretizing the to-be-deposited object into a plurality of grid structures, and determining a flux distribution function of incident particles of a single grid structure in a reaction period; and according to the incident particle flux distribution function of the single grid structure in one reaction period, determining a total incident particle flux distribution function of the grid structure of the object to be deposited in one reaction period. Through the technical scheme, the accuracy of flux calculation of the incident particles is improved, so that the atomic layer deposition rate of the corresponding position and the evolution of the surface morphology of the substrate are conveniently calculated subsequently.

Description

[Technical field]

[0001] The present application relates to the field of deposition process technology, and in particular to a method, device, equipment and medium for calculating incident particle flux distribution. [Background technology]

[0002] Driven by Moore's Law, the feature size of integrated circuits continues to shrink, and the complexity of integrated circuits increases exponentially. Electronic design automation (EDA) software has become an indispensable tool in the design and manufacture of advanced integrated circuits. Among them, integrated circuit process simulation software, as an important part of integrated circuit EDA tools, is an important means for integrated circuit manufacturers (Foundry) to develop processes, improve product yields, and reduce production costs.

[0003] The size and quality of the final layout formed on the silicon wafer are jointly determined by the lithography process, etching process and thin film deposition process. Unlike traditional large-size technology nodes, when the integrated circuit manufacturing process technology node enters 14nm and below, in addition to the well-known challenges faced by lithography and etching processes, higher requirements are also placed on the performance of processes such as thin film deposition. The performance of traditional deposition processes such as chemical vapor deposition (CVD) and physical vapor deposition (PVD) is significantly reduced in complex substrate structures such as small size and large aspect ratio. Atomic layer deposition (ALD) can solve this problem. The special process design of ALD makes the film growth have the characteristics of self-limitation, and can achieve precise film thickness control of one atomic layer per growth cycle. Compared with other thin film preparation technologies, ALD technology film growth is independent of temperature and airflow density, and has excellent thickness uniformity, 100% step coverage (uniform growth on the back), extremely convenient composition control (layer-by-layer doping), and precise and controllable growth. In advanced process technology nodes, including the formation of spacers in self-aligned double patterning (SADP), the deposition of High-K metal gates and the production of sidewalls in FinFET processes, the deposition of inner spacers in the next-generation mainstream logic device GAA (Gate-All-Around) process, and the deposition of work function metal after dummy gate release, all steps are inseparable from the ALD process. In addition, in the manufacture of advanced memories such as 3D-NAND, the deposition of dielectric films on the sidewalls of vertical holes is achieved by atomic layer deposition technology. Although atomic layer deposition technology has natural conformality, it also faces challenges in actual processes, such as: the bottleneck effect that cannot be avoided under extreme size and large aspect ratio trenches; the long deposition time increases the process production cost; the process production parameters are fixed, and the adjustment of a certain parameter is costly.

[0004] The above problems can be effectively solved by using computer-aided means to establish a simulation model of ALD technology. Foreign EDA manufacturers have also developed corresponding simulation software for the research on ALD technology modeling, but these simulation software have shortcomings such as large simulation size, low accuracy, and difficulty in processing high aspect ratio structures. There are few studies on the growth profile of ALD technology in China. Therefore, it is of great significance to establish a high-precision and convenient ALD technology simulation model to assist the research and development of related ALD deposition processes to meet the simulation needs of integrated circuit manufacturers, equipment manufacturers, designers, scientific research institutions, etc. for process research and development yield improvement, cutting-edge exploration, etc. [Summary of the invention]

[0005] The embodiments of the present application provide a method, device, equipment and medium for calculating the distribution of incident particle flux, aiming to solve technical problems such as the low accuracy of the simulation model of atomic layer deposition technology in related technologies.

[0006] In a first aspect, an embodiment of the present application provides a method for calculating incident particle flux distribution, which is used in an atomic layer deposition process, and the method includes:

[0007] Acquiring structural information of the object to be deposited;

[0008] Determining the position coordinates of the incident particle emission source and the range of the incident angle according to the structural information;

[0009] discretizing the object to be deposited into a plurality of grid structures, and determining a flux distribution function of incident particles of a single grid structure in a reaction cycle;

[0010] According to the incident particle flux distribution function of the single grid structure in one reaction cycle, the total incident particle flux distribution function of the grid structure of the object to be deposited in one reaction cycle is determined.

[0011] In one embodiment, optionally, the obtaining structural information of the object to be deposited includes:

[0012] In the process node, the substrate structure information of the object to be deposited is extracted;

[0013] The corresponding structural information in the atomic layer deposition process simulation modeling process is determined according to the substrate structural information of the object to be deposited.

[0014] In one embodiment, optionally, determining the position coordinates and the range of the incident angle of the incident particle emission source according to the structural information includes:

[0015] Determining first limit coordinates and second limit coordinates of the object to be deposited according to the structural information;

[0016] Randomly selecting target coordinates in the substrate structure of the object to be deposited;

[0017] Determining a range of an incident angle of the incident particle emission source according to the first limit coordinate and the second limit coordinate, and the target coordinate;

[0018] The position coordinates of the incident particle emission source are selected within the range of the incident angle.

[0019] In one embodiment, optionally, determining the range of the incident angle of the incident particle emission source according to the first limit coordinate and the second limit coordinate, and the target coordinate, includes:

[0020] The first incident limit angle is calculated using the following first calculation formula:

[0021] θ 1 =arctan((y 1 -y) / (x 1 -x))

[0022] The second incident limit angle is calculated using the following second calculation formula:

[0023] θ 2 =arctan((y 2 -y) / (x 2 -x)

[0024] Among them, (x 1 ,y 1 ) represents the first limiting coordinate, (x 2 ,y 2 ) represents the first limit coordinate, and (x, y) represents the target coordinate;

[0025] The range of the incident angle is determined according to the first incident limit angle and the second incident limit angle.

[0026] In one embodiment, optionally, the flux distribution function of incident particles of a single grid structure in a reaction cycle includes:

[0027]

[0028] in, represents the flux of incident particles at grid structure i, r i represents the probability of a reaction when the incident particle hits the grid structure i, r j represents the reaction probability of the incident particle when it hits the grid structure j, SC represents the adhesion coefficient of the incident particle, θ represents the incident angle, q ji represents the probability of incident particles being reflected from grid structure j to grid structure i, φ j represents the flux of incident particles at grid structure j.

[0029] In one embodiment, optionally, determining the total incident particle flux distribution function of the grid structure of the object to be deposited in one reaction cycle according to the incident particle flux distribution function of the single grid structure in one reaction cycle includes:

[0030] The incident particle flux distribution functions of all single grid structures in one reaction cycle are summed to obtain the total incident particle flux distribution function of the grid structure of the object to be deposited in one reaction cycle.

[0031] In one embodiment, optionally, the method further comprises:

[0032] The ray tracing method is used to track the movement path of the incident particles and the changes in the movement trajectory after reaching the substrate surface of the object to be deposited, so as to determine the total incident particle flux distribution function of the grid structure of the object to be deposited in one reaction cycle.

[0033] In a second aspect, an embodiment of the present application provides an incident particle flux distribution calculation device, comprising:

[0034] An acquisition module, used to acquire structural information of the object to be deposited;

[0035] A first determination module is used to determine the position coordinates of the incident particle emission source and the range of the incident angle according to the structural information;

[0036] A second determination module is used to discretize the object to be deposited into a plurality of grid structures, and determine a flux distribution function of incident particles of a single grid structure in a reaction cycle;

[0037] The third determination module is used to determine the total incident particle flux distribution function of the grid structure of the object to be deposited in one reaction cycle according to the incident particle flux distribution function of the single grid structure in one reaction cycle.

[0038] In a third aspect, a computer device is provided, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of the above-mentioned incident particle flux distribution calculation method when executing the computer program.

[0039] In a fourth aspect, a computer-readable storage medium is provided, wherein the computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the above-mentioned incident particle flux distribution calculation method are implemented.

[0040] In the scheme implemented by the above incident particle flux distribution calculation method, device, equipment and medium, starting from the reaction mechanism of the atomic layer deposition process, according to the structural information of the object to be deposited, the position coordinates of the corresponding particle emission source and the range of the incident angle are first determined, and then the structure of the object to be deposited is discretized, and the motion trajectory of the incident particles is tracked according to the corresponding deposition process conditions, and then the flux distribution function of the incident particles in the single grid structure is derived, and finally, the total incident particle flux distribution function in the discretized structure of the object to be deposited is calculated. In this way, the accuracy of the incident particle flux calculation is improved, so as to facilitate the subsequent calculation of the atomic layer deposition rate at the corresponding position and the evolution of the substrate surface morphology.

Brief Description of the Drawings

[0041] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0042] Figure 1 A schematic flow chart of a method for calculating incident particle flux distribution according to an embodiment of the present application is shown.

[0043] Figure 2 A schematic flow chart of a method for calculating incident particle flux distribution according to another embodiment of the present application is shown.

[0044] Figure 3 A schematic diagram of the motion trajectory of incident particles in a groove substrate structure according to an embodiment of the present application is shown.

[0045] Figure 4 A schematic diagram of a physical model of atomic layer deposition according to an embodiment of the present application is shown.

[0046] Figure 5 A block diagram of a device for calculating incident particle flux distribution according to an embodiment of the present application is shown.

[0047] Figure 6 A schematic structural diagram of a computer device according to an embodiment of the present application is shown.

[0048] Figure 7 Another structural schematic diagram of a computer device according to an embodiment of the present application is shown. [Specific implementation method]

[0049] In order to better understand the technical solution of the present application, the embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0050] It should be clear that the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0051] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms "a", "said" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings.

[0052] Early ALD simulation research mainly used classical models in film growth, such as the LG model, solid-solid model, Eden model, diffusion-limited aggregation (DLA) model, and reaction-limited aggregation (RLA) model, to describe the processes of particle aggregation, adhesion, and island formation on the deposition surface. Then, theoretical methods of classical mechanics and molecular dynamics were used to study the calculation and simulation problems of film deposition, such as: using quantum mechanics to describe the reaction pathways, reaction mechanisms, and bonding of particles; using molecular dynamics to describe the changes in the motion state of each particle over time using Newtonian mechanics at the atomic scale, studying the effects of changes in initial conditions on film growth, and calculating the surface roughness and layer coverage of the film; using kinetic Monte Carlo (KMC) to describe surface evolution and other issues. However, these description methods are relatively simple and cannot describe in detail the two-dimensional, island-shaped, and random deposition modes included in ALD growth. Subsequently, researchers began to combine a variety of classical methods, focusing on the reaction pathways, bond energy, and structure of the ALD process during the research process. For example, Mazaleyrat et al. used the lattice kinetic Monte Carlo (LKMC) model to simulate the Al2O3 growth process on the SiO2 / Si(100) surface, and clearly demonstrated the lattice structure change process of the model; Dkhissi et al. used the method of combining LKMC with DFT to establish an optimization model that can analyze the parameters such as the hydroxyl (-OH) density, optimal growth temperature, and pulse time during the ALD growth of HfO2 thin films on the Si(100) surface; Knizhnik and Bagaturyants et al. combined molecular dynamics and Monte Carlo simulation to accurately calculate and predict the coverage of adsorbed particles during the adsorption and growth of ZrCl4 on the Si(100) surface. However, these methods only consider the influence of a few parameters on the deposition rate and cannot accurately describe the evolution of the surface morphology.

[0053] In conjunction with the accompanying drawings, some embodiments of the present application are described in detail below. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.

[0054] See also Figure 1 , Figure 1 A schematic flow chart of a method for calculating the incident particle flux distribution according to an embodiment of the present application is shown. The method for calculating the incident particle flux distribution is used to solve technical problems such as low precision of the simulation model of the atomic layer deposition technology in related technologies.

[0055] like Figure 1 As shown, according to an embodiment of the present application, a method for calculating the incident particle flux distribution is used in an atomic layer deposition process, and the process includes:

[0056] Step S101, obtaining structural information of the object to be deposited;

[0057] In one embodiment, optionally, step S101 includes:

[0058] In the process node, the substrate structure information of the object to be deposited is extracted;

[0059] The corresponding structural information in the atomic layer deposition process simulation modeling process is determined according to the substrate structural information of the object to be deposited.

[0060] The sources of atomic layer deposition substrate structures can be divided into custom structures and extraction from images (including but not limited to SEM, TEM, and layout). The method of customizing the substrate structure is mainly: first define an M*N area in a two-dimensional plane coordinate system, and then define a signed distance function in this area: is an arbitrary function, and finally the zero level set contour is drawn to obtain the desired substrate structure; the method of extracting the corresponding substrate structure from the image is mainly to use the contour extraction function in the Python language, such as: cv2.findcontours() function to extract the corresponding contour in the image.

[0061] Step S102, determining the position coordinates of the incident particle emission source and the range of the incident angle according to the structural information;

[0062] like Figure 2 As shown, in one embodiment, optionally, step S102 includes:

[0063] Step S201, determining a first limit coordinate and a second limit coordinate of the object to be deposited according to the structural information;

[0064] Step S202, randomly selecting target coordinates in the substrate structure of the object to be deposited;

[0065] Step S203, determining the range of the incident angle of the incident particle emission source according to the first limit coordinates and the second limit coordinates, and the target coordinates;

[0066] Step S204, selecting the position coordinates of the incident particle emission source within the range of the incident angle.

[0067] In one embodiment, optionally, determining the range of the incident angle of the incident particle emission source according to the first limit coordinate and the second limit coordinate, and the target coordinate, includes:

[0068] The first incident limit angle is calculated using the following first calculation formula:

[0069] θ1 =arctan((y 1 -y) / (x 1 -x))

[0070] The second incident limit angle is calculated using the following second calculation formula:

[0071] θ 2 =arctan((y 2 -y) / (x 2 -x)

[0072] Among them, (x 1 ,y 1 ) represents the first limiting coordinate, (x 2 ,y 2 ) represents the first limit coordinate, and (x, y) represents the target coordinate;

[0073] The range of the incident angle is determined according to the first incident limit angle and the second incident limit angle.

[0074] Specifically, Figure 3 As shown, randomly select a point in the substrate structure with coordinates (x, y), θ 1 is the angle between the incident right boundary and the horizontal line, θ 2 is the angle between the incident left boundary and the horizontal line, θ is the angle between the particle incident trajectory and the horizontal line, and α is the normal vector between the particle incident direction and the position of the incident point For any particle incident from the outside to the point (x, y), the incident limit angle (θ) between the incident particle and the left and right sides of the point (x, y) can be determined based on visibility. 1 ,θ 2 ).

[0075] The left limit coordinate is (x 2 ,y 2 ), the left incident limit angle is θ 2 =arctan((y 2 -y) / (x 2 -x), the right limit coordinate is (x 1 ,y 1 ), the right incident limit angle is θ 1 =arctan((y 1 -y) / (x 1 -x))

[0076] Step S103, discretizing the object to be deposited into a plurality of grid structures, and determining a flux distribution function of incident particles of a single grid structure in a reaction cycle;

[0077] In one embodiment, optionally, the method further comprises:

[0078] The ray tracing method is used to track the movement path of the incident particles and the change of the movement trajectory after reaching the substrate surface of the object to be deposited, so as to determine the total incident particle flux distribution function of the grid structure of the object to be deposited in one reaction cycle.

[0079] In this step, if Figure 4 As shown, the object to be deposited is discretized into a grid structure. According to the corresponding deposition process conditions and after considering the corresponding physical mechanism in the deposition process, the flux distribution function of the incident particles of a single grid structure in one reaction cycle is established by tracking the motion trajectory of the incident particles.

[0080] The movement of incident particles in the substrate during the atomic layer deposition process mainly includes the following aspects: (1) After the incident particles are incident on the substrate surface, they directly adhere to the substrate surface and undergo a chemical reaction; (2) After the incident particles are incident on the substrate surface area j, they do not react and are reflected to area i; (3) The incident particles do not react with the substrate but diffuse on the substrate surface. The incident particle flux calculation method proposed in the present invention only considers cases (1) and (2). The detailed calculation process is as follows:

[0081] by Figure 3 Take the groove substrate structure shown as an example: the entire substrate structure is discretized into N regions. According to the principle of energy conservation, the incident flux at region i is:

[0082]

[0083] in, represents the flux of incident particles at grid structure i, r i represents the probability of a reaction when the incident particle hits the grid structure i, r j represents the reaction probability of the incident particle when it hits the grid structure j, SC represents the adhesion coefficient of the incident particle, θ represents the incident angle, q ji represents the probability of incident particles being reflected from grid structure j to grid structure i, φ j represents the flux of incident particles at grid structure j.

[0084] Step S104 , determining a total incident particle flux distribution function of the grid structure of the object to be deposited in one reaction cycle according to the incident particle flux distribution function of the single grid structure in one reaction cycle.

[0085] In one embodiment, optionally, step S104 includes:

[0086] The incident particle flux distribution functions of all single grid structures in one reaction cycle are summed to obtain the total incident particle flux distribution function of the grid structure of the object to be deposited in one reaction cycle.

[0087] Specifically, the total particle incident flux in the substrate structure in a single reaction cycle is:

[0088] In the above embodiment, the process of atomic layer deposition can be divided into two parts: first, the precursor A reacts with the surface of the substrate to be deposited to generate a semi-reactant; second, the reaction gas B reacts chemically with the generated semi-reactant to generate a corresponding thin film structure. The present invention analyzes the physical mechanism in the atomic layer deposition process and, based on the Monte Carlo method, derives the flux distribution function of the incident particles in the structure of the object to be deposited by tracking the motion path of the incident particles and the changes in the motion trajectory after reaching the substrate surface. Compared with the particle flux calculation in the traditional atomic layer process simulation modeling method, the particle flux calculation formula based on the Monte Carlo method has high accuracy and a wide range of applications. It is not only suitable for the calculation of the incident particle flux in a two-dimensional substrate structure, but can also be further extended to the calculation of the incident particle flux in a three-dimensional substrate structure.

[0089] It should be understood that the order of execution of the steps in the above embodiment does not necessarily mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiment of the present invention.

[0090] Figure 5 A block diagram of a device for calculating incident particle flux distribution according to an embodiment of the present application is shown.

[0091] like Figure 5 As shown, in a second aspect, an embodiment of the present application provides an incident particle flux distribution calculation device 50, comprising:

[0092] An acquisition module 51 is used to acquire structural information of the object to be deposited;

[0093] A first determination module 52 is used to determine the position coordinates of the incident particle emission source and the range of the incident angle according to the structural information;

[0094] A second determination module 53 is used to discretize the object to be deposited into a plurality of grid structures, and determine a flux distribution function of incident particles of a single grid structure in a reaction cycle;

[0095] The third determination module 54 is used to determine the total incident particle flux distribution function of the grid structure of the object to be deposited in one reaction cycle according to the incident particle flux distribution function of the single grid structure in one reaction cycle.

[0096] In one embodiment, optionally, the acquisition module includes:

[0097] An extraction unit, used to extract substrate structure information of an object to be deposited in a process node;

[0098] The structure determination unit is used to determine the corresponding structure information in the atomic layer deposition process simulation modeling process according to the substrate structure information of the object to be deposited.

[0099] In one embodiment, optionally, the first determining module includes:

[0100] A coordinate determination unit, configured to determine a first limit coordinate and a second limit coordinate of the object to be deposited according to the structural information;

[0101] A first selection unit is used to randomly select the target coordinates in the substrate structure of the object to be deposited;

[0102] a range determination unit, configured to determine a range of an incident angle of the incident particle emission source according to the first limit coordinate and the second limit coordinate, and the target coordinate;

[0103] The second selection unit is used to select the position coordinates of the incident particle emission source within the range of the incident angle.

[0104] In one embodiment, optionally, the unit determination unit is used to:

[0105] The first incident limit angle is calculated using the following first calculation formula:

[0106] θ 1 =arctan((y 1 -y) / (x 1 -x))

[0107] The second incident limit angle is calculated using the following second calculation formula:

[0108] θ 2 =arctan((y 2 -y) / (x 2 -x)

[0109] Among them, (x 1 ,y 1 ) represents the first limiting coordinate, (x 2 ,y 2 ) represents the first limit coordinate, and (x, y) represents the target coordinate;

[0110] The range of the incident angle is determined according to the first incident limit angle and the second incident limit angle.

[0111] In one embodiment, optionally, the flux distribution function of incident particles of a single grid structure in a reaction cycle includes:

[0112]

[0113] in, represents the flux of incident particles at grid structure i, r i represents the probability of a reaction when the incident particle hits the grid structure i, r j represents the reaction probability of the incident particle when it hits the grid structure j, SC represents the adhesion coefficient of the incident particle, θ represents the incident angle, q ji represents the probability of incident particles being reflected from grid structure j to grid structure i, φ j represents the flux of incident particles at grid structure j.

[0114] In one embodiment, optionally, the third determining module is used to:

[0115] The incident particle flux distribution functions of all single grid structures in one reaction cycle are summed to obtain the total incident particle flux distribution function of the grid structure of the object to be deposited in one reaction cycle.

[0116] In one embodiment, optionally, the device further comprises:

[0117] The fourth determination module is used to determine the total incident particle flux distribution function of the grid structure of the object to be deposited within a reaction cycle by using a ray tracing method to track the movement path of the incident particles and the change of the movement trajectory after reaching the substrate surface of the object to be deposited.

[0118] For the specific definition of the incident particle flux distribution calculation device, please refer to the definition of the incident particle flux distribution calculation method mentioned above, which will not be repeated here. Each module in the above-mentioned incident particle flux distribution calculation device can be implemented in whole or in part by software, hardware and a combination thereof. The above-mentioned modules can be embedded in or independent of the processor in the computer device in the form of hardware, or can be stored in the memory of the computer device in the form of software, so that the processor can call and execute the operations corresponding to the above modules.

[0119] In one embodiment, a computer device is provided. The computer device may be a server, and its internal structure diagram may be as follows: Figure 6As shown. The computer device includes a processor, a memory, a network interface and a database connected via a system bus. The processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile and / or volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program and a database. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The network interface of the computer device is used to communicate with an external client via a network connection. When the computer program is executed by the processor, the functions or steps on the server side of a method for calculating the distribution of incident particle flux are implemented.

[0120] In one embodiment, a computer device is provided. The computer device may be a client, and its internal structure diagram may be as follows: Figure 7 As shown. The computer device includes a processor, a memory, a network interface, a display screen and an input device connected through a system bus. Among them, the processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The network interface of the computer device is used to communicate with an external server through a network connection. When the computer program is executed by the processor, the functions or steps on the client side of a method for calculating the distribution of incident particle flux are implemented.

[0121] It should be understood that the processor may be a central processing unit (CPU), and the processor may also be other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. Among them, the general-purpose processor may be a microprocessor or the processor may also be any conventional processor, etc.

[0122] The computer device of the embodiment of the present application exists in various forms, including but not limited to:

[0123] (1) Mobile communication devices: These devices are characterized by their mobile communication functions and their main purpose is to provide voice and data communications. These terminals include: smart phones (such as iPhone), multimedia phones, functional phones, and low-end phones.

[0124] (2) Ultra-mobile personal computer devices: These devices fall into the category of personal computers, have computing and processing capabilities, and generally also have mobile Internet access features. These terminals include: PDA, MID and UMPC devices, such as iPad.

[0125] (3) Portable entertainment devices: These devices can display and play multimedia content. They include audio and video players (such as iPods), handheld game consoles, e-books, as well as smart toys and portable car navigation devices.

[0126] (4) Server: A device that provides computing services. The server consists of a processor, hard disk, memory, system bus, etc. The server is similar to a general computer architecture, but because it needs to provide highly reliable services, it has higher requirements in terms of processing power, stability, reliability, security, scalability, and manageability.

[0127] (5) Other electronic devices with data interaction functions.

[0128] In one embodiment, a computer device is provided, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the incident particle flux distribution calculation method when executing the computer program.

[0129] It should be noted that the above functions or steps that can be implemented by the computer-readable storage medium or electronic device can refer to the relevant description in the aforementioned method embodiment. To avoid repetition, they will not be described one by one here.

[0130] It should be understood that the term "and / or" used in this article is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0131] It should be understood that, although the terms first, second, etc. may be used to describe the setting unit in the embodiments of the present application, these setting units should not be limited to these terms. These terms are only used to distinguish the setting units from each other. For example, without departing from the scope of the embodiments of the present application, the first setting unit may also be referred to as the second setting unit, and similarly, the second setting unit may also be referred to as the first setting unit.

[0132] The word "if" as used herein may be interpreted as "at the time of" or "when" or "in response to determining" or "in response to detecting", depending on the context. Similarly, the phrases "if it is determined" or "if (stated condition or event) is detected" may be interpreted as "when it is determined" or "in response to determining" or "when detecting (stated condition or event)" or "in response to detecting (stated condition or event)", depending on the context.

[0133] In the several embodiments provided in the present application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0134] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of hardware plus software functional units.

[0135] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, storage, database or other media used in the embodiments provided in this application can include non-volatile and / or volatile memory. Non-volatile memory can include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM) or flash memory. Volatile memory can include random access memory (RAM) or external cache memory. As an illustration and not limitation, RAM is available in many forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link (Synchlink) DRAM (SLDRAM), memory bus (Rambus) direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM).

[0136] The embodiments described above are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included in the protection scope of the present invention.

Claims

1. A method for calculating incident particle flux distribution, characterized in that: Used in an atomic layer deposition process, the method comprises: Acquiring structural information of the object to be deposited; Determining the position coordinates of the incident particle emission source and the range of the incident angle according to the structural information; discretizing the object to be deposited into a plurality of grid structures, and determining a flux distribution function of incident particles of a single grid structure in a reaction cycle; According to the incident particle flux distribution function of the single grid structure in one reaction cycle, the total incident particle flux distribution function of the grid structure of the object to be deposited in one reaction cycle is determined.

2. The method according to claim 1, characterized in that The step of obtaining structural information of the object to be deposited comprises: In the process node, the substrate structure information of the object to be deposited is extracted; The corresponding structural information in the atomic layer deposition process simulation modeling process is determined according to the substrate structural information of the object to be deposited.

3. The method according to claim 1, characterized in that Determining the position coordinates of the incident particle emission source and the range of the incident angle according to the structural information includes: Determining first limit coordinates and second limit coordinates of the object to be deposited according to the structural information; Randomly selecting target coordinates in the substrate structure of the object to be deposited; Determining a range of an incident angle of the incident particle emission source according to the first limit coordinate and the second limit coordinate, and the target coordinate; The position coordinates of the incident particle emission source are selected within the range of the incident angle.

4. The method according to claim 1, characterized in that: Determining the range of the incident angle of the incident particle emission source according to the first limit coordinate and the second limit coordinate, and the target coordinate, includes: The first incident limit angle is calculated using the following first calculation formula: θ1=arctan((y1-y) / (x1-x)) The second incident limit angle is calculated using the following second calculation formula: θ2=arctan((y2-y) / (x2-x) Wherein, (x1, y1) represents the first limit coordinate, (x2, y2) represents the first limit coordinate, and (x, y) represents the target coordinate; The range of the incident angle is determined according to the first incident limit angle and the second incident limit angle.

5. The method according to claim 4, characterized in that The flux distribution function of the incident particles in a single grid structure during a reaction cycle includes: in, represents the flux of incident particles at grid structure i, r i represents the probability of a reaction when the incident particle hits the grid structure i, r j represents the reaction probability of the incident particle when it hits the grid structure j, SC represents the adhesion coefficient of the incident particle, θ represents the incident angle, q ji represents the probability of incident particles being reflected from grid structure j to grid structure i, φ j represents the flux of incident particles at grid structure j.

6. The method according to claim 1, characterized in that Determining the total incident particle flux distribution function of the grid structure of the object to be deposited in a reaction cycle according to the incident particle flux distribution function of the single grid structure in a reaction cycle includes: The incident particle flux distribution functions of all single grid structures in one reaction cycle are summed to obtain the total incident particle flux distribution function of the grid structure of the object to be deposited in one reaction cycle.

7. The method according to any one of claims 1 to 6, characterized in that The method further comprises: The ray tracing method is used to track the movement path of the incident particles and the changes in the movement trajectory after reaching the substrate surface of the object to be deposited, so as to determine the total incident particle flux distribution function of the grid structure of the object to be deposited in one reaction cycle.

8. An incident particle flux distribution calculation device, characterized in that: include: An acquisition module, used to acquire structural information of the object to be deposited; A first determination module is used to determine the position coordinates of the incident particle emission source and the range of the incident angle according to the structural information; A second determination module is used to discretize the object to be deposited into a plurality of grid structures, and determine a flux distribution function of incident particles of a single grid structure in a reaction cycle; The third determination module is used to determine the total incident particle flux distribution function of the grid structure of the object to be deposited in one reaction cycle according to the incident particle flux distribution function of the single grid structure in one reaction cycle.

9. A computer device, characterized in that: include: at least one processor; and, a memory communicatively coupled to the at least one processor; The memory stores instructions executable by the at least one processor, wherein the instructions are configured to execute the method according to any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that: Computer executable instructions are stored, and the computer executable instructions are used to execute the method according to any one of claims 1 to 7.

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